Light-emitting device and manufacturing method of light-emitting device

Abstract

To provide a light-emitting device with high yield and a manufacturing method for the light-emitting device.SOLUTION: A manufacturing method for a light-emitting device includes steps of forming a first metal film on a mounting substrate having a first terminal and a first pad, the first metal film electrically connecting the first terminal and the first pad, so as to cover a portion of an upper surface of the first terminal and a portion of an upper surface of the first pad, forming a first insulating film by insulating a surface side of the first metal film while ensuring electrical continuity between the first terminal and the first pad, mounting a light-emitting element having a first electrode on the mounting substrate with the first electrode in contact with the upper surface of the first terminal, forming a first plating film on surfaces of the first terminal and the first electrode while the first metal film and the first insulating film are still formed, and removing the first insulating film and the first metal film after the step of forming the first plating film.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] The present disclosure relates to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] As a light-emitting device used for vehicle lamps or illumination, a light-emitting device is known in which a plurality of light-emitting elements are mounted on a mounting board and a light reflector is provided surrounding each light-emitting element. In such a light-emitting device, the plurality of light-emitting elements mounted on the mounting board may include a light-emitting element that does not light up. For example, when the quality of a light-emitting device is judged based on the ratio (lighting rate) of the light-emitting elements that light up among the plurality of light-emitting elements, a light-emitting device with a lighting rate below a reference value is defective. In addition, in the manufacturing process of a light-emitting device in which a plurality of light-emitting elements are mounted on a mounting board, the plurality of light-emitting elements may be bonded to the mounting board by plating, and a mounting board that enables bonding by plating is known. However, when light-emitting elements are bonded to a mounting board by plating, it is difficult to replace a light-emitting element that does not light up after bonding. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 52-055391 Summary of the Invention [Problem to be solved by the invention]

[0004] It is desirable to improve the yield by making it possible to replace light-emitting elements that do not light up. Also, in light-emitting devices, it is desirable to improve the yield by suppressing detachment of a light reflecting material from the light-emitting device and improving reliability.

[0005] An object of the present disclosure is to provide a light emitting device with high yield and a method for manufacturing the light emitting device. [Means for solving the problem]

[0006] According to one aspect of the disclosed technique, a method for manufacturing a light emitting device includes the steps of: forming, on a mounting substrate having a first terminal, a second terminal, a first pad, and a second pad, a first metal film that electrically connects the first terminal and the first pad so as to cover a part of an upper surface of the first terminal and a part of an upper surface of the first pad; forming a second metal film that electrically connects the second terminal and the second pad so as to cover a part of an upper surface of the second terminal and a part of an upper surface of the second pad; forming a first insulating film by insulating a surface side of the first metal film while ensuring electrical connection between the first terminal and the first pad; and insulating the surface side of the second metal film while ensuring electrical connection between the second terminal and the second pad. the step of forming a second insulating film by contacting the first electrode with an upper surface of the first terminal and the second electrode with an upper surface of the second terminal, mounting a light-emitting element having a first electrode and a second electrode on the mounting substrate by contacting the first electrode with an upper surface of the first terminal and the second electrode with an upper surface of the second terminal, forming a first plating film on surfaces of the first terminal and the first electrode while the first metal film and the first insulating film are formed, and forming a second plating film on surfaces of the second terminal and the second electrode while the second metal film and the second insulating film are formed, and removing the first insulating film, the first metal film, the second insulating film, and the second metal film after the step of forming the first plating film and the second plating film.

[0007] According to one aspect of the disclosed technology, a light emitting device has a mounting substrate having a first terminal, a second terminal, a first pad, and a second pad; a light emitting element having a first electrode and a second electrode, the first electrode being in contact with an upper surface of the first terminal, and the second electrode being in contact with an upper surface of the second terminal; a first plating film formed on surfaces of the first terminal and the first electrode; a second plating film formed on surfaces of the second terminal and the second electrode; and a light reflecting material formed on the mounting substrate and surrounding the light emitting element in a planar view, wherein a first recess including a portion of the upper surface of the first terminal and recessed toward the first electrode is formed on a side of the first plating film, and a second recess including a portion of the upper surface of the second terminal and recessed toward the second electrode is formed on a side of the second plating film, and the light reflecting material is arranged in the first recess and the second recess. Effect of the Invention

[0008] According to the present disclosure, it is possible to provide a light emitting device and a method for manufacturing a light emitting device with a high yield. [Brief description of the drawings]

[0009] [Figure 1] 4 is a flowchart showing a method for manufacturing the light emitting device according to the first embodiment. [Diagram 2] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 3] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 5] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 6] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 7] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 8] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 9] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 10] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 11] 2A to 2C are top views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 12] 2A to 2C are top views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 13] 2A to 2C are top views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 14] 2A to 2C are top views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 15] 2A to 2C are top views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 16] 2A to 2C are top views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 17] 5A to 5C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 18] 5A to 5C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 19] 5A to 5C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 20] 10A to 10C are cross-sectional views showing a method for manufacturing a light emitting device according to a modified example of the second embodiment. [Figure 21] 10A to 10C are cross-sectional views showing a method for manufacturing a light emitting device according to a modified example of the second embodiment. [Figure 22] FIG. 2 is a top view showing a first example of an arrangement of metal films. [Diagram 23] FIG. 11 is a top view showing a second example of the arrangement of the metal film. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment for carrying out the present disclosure will be described with reference to the drawings. The following description is for embodying the technical idea of ​​the present disclosure, and unless otherwise specified, the present disclosure is not limited to the following description.

[0011] In each drawing, the same reference numerals may be attached to components having the same function. In consideration of the explanation or ease of understanding of the main points, the embodiments may be shown separately for convenience, but partial replacement or combination of the configurations shown in different embodiments or examples is possible. In the embodiments shown later, differences from the embodiments shown earlier are mainly explained, and overlapping explanations of matters common to the embodiments shown earlier may be omitted. The size and positional relationship of the components shown in each drawing may be exaggerated to clarify the explanation. In the following explanation, an XYZ orthogonal coordinate system is used, but this coordinate system is defined for the purpose of explanation and does not limit the attitude of the light-emitting device. In addition, from an arbitrary point, the +Z side may be referred to as the upper side, upper side, or top, and the -Z side may be referred to as the lower side, lower side, or bottom.

[0012] (First embodiment) First, a first embodiment will be described. The first embodiment relates to a method for manufacturing a light emitting device. Fig. 1 is a flowchart showing the method for manufacturing a light emitting device according to the first embodiment. Figs. 2 to 10 are cross-sectional views showing the method for manufacturing a light emitting device according to the first embodiment. Figs. 11 to 16 are top views showing the method for manufacturing a light emitting device according to the first embodiment. Figs. 2 to 10 show cross sections taken along line II in Figs. 11 to 16.

[0013] First, as shown in FIG. 2 and FIG. 11, a process of preparing a mounting board 10 including a base material 15, a plurality of P terminals 11P, a plurality of N terminals 11N, a P power supply pad 12P, and an N power supply pad 12N is performed (step S1). The base material 15 has two main surfaces parallel to the XY plane, and the P terminal 11P, the N terminal 11N, the P power supply pad 12P, and the N power supply pad 12N are provided on the main surface on the +Z side. For example, the base material 15 has a plurality of wiring layers. The P power supply pad 12P and the N power supply pad 12N extend along the Y axis. The plurality of P terminals 11P are arranged along the Y axis between the P power supply pad 12P and the N power supply pad 12N. The plurality of N terminals 11N are arranged along the Y axis between the P power supply pad 12P and the N power supply pad 12N. The P terminal 11P is between the P power supply pad 12P and the N terminal 11N, and the N terminal 11N is between the N power supply pad 12N and the P terminal 11P. The P terminal 11P and the N terminal 11N are adjacent to each other along the X-axis. The P terminal 11P, the N terminal 11N, the P power supply pad 12P, and the N power supply pad 12N can be made of a material whose surface is not easily oxidized. For example, gold (Au) or a platinum group metal such as Ru, Rh, Pd, Os, Ir, or Pt. The P terminal 11P is an example of a first terminal, the N terminal 11N is an example of a second terminal, the P power supply pad 12P is an example of a first pad, and the N power supply pad 12N is an example of a second pad.

[0014] 2, a process of forming a metal film 23 that covers the P terminal 11P, the N terminal 11N, the P power supply pad 12P, the N power supply pad 12N, the first portion 13P on the surface of the mounting substrate 10, and the second portion 13N on the surface of the mounting substrate 10 is performed (step S2). The first portion 13P is a portion exposed between the P terminal 11P and the P power supply pad 12P on the surface of the mounting substrate 10. The second portion 13N is a portion exposed between the N terminal 11N and the N power supply pad 12N on the surface of the mounting substrate 10. For example, the metal film 23 is made of a plurality of layers, and the layer located on the outermost surface side of the metal film 23 contains aluminum, chromium, or an alloy of tungsten and titanium. In forming the metal film 23, for example, a titanium tungsten (TiW) layer 21 is formed, and then an aluminum (Al) layer 22 is formed on the titanium tungsten layer 21. A titanium layer may be formed instead of the titanium tungsten layer 21, and a chromium layer or an alloy layer of tungsten and titanium may be formed instead of the aluminum layer 22. By providing the titanium tungsten layer 21, it is possible to suppress mutual diffusion between the aluminum layer 22 and the P terminal 11P and N terminal 11N. It is preferable that the resistivity of the metal film 23 is approximately the same as the resistivity of the P terminal 11P and the N terminal 11N. The metal film 23 is an example of a third metal film.

[0015] 3 and 12, a process of forming a mask 51 on the first region 27P and the second region 27N of the metal film 23 is performed (step S3). The first region 27P of the metal film 23 is a region that covers the first portion 13P of the mounting substrate 10, a portion of the upper surface 11PA of the P terminal 11P, and a portion of the upper surface 12PA of the P power supply pad 12P. The second region 27N of the metal film 23 is a region that covers the second portion 13N of the mounting substrate 10, a portion of the upper surface 11NA of the N terminal 11N, and a portion of the upper surface 12NA of the N power supply pad 12N. The mask 51 is formed by, for example, applying, exposing, and developing a resist.

[0016] 4, a process of removing the portion of the metal film 23 exposed from the mask 51 is performed (step S4). As a result, the metal film 20P that electrically connects the P terminal 11P and the P power supply pad 12P is formed in the first region 27P of the metal film 23 so as to cover a part of the upper surface 11PA of the P terminal 11P and a part of the upper surface 12PA of the P power supply pad 12P. In addition, the metal film 20N that electrically connects the N terminal 11N and the N power supply pad 12N is formed in the second region 27N of the metal film 23 so as to cover a part of the upper surface 11NA of the N terminal 11N and a part of the upper surface 12NA of the N power supply pad 12N. For example, the metal film 20P has a titanium tungsten layer 21P and an aluminum layer 22P on the titanium tungsten layer 21P, and the metal film 20N has a titanium tungsten layer 21N and an aluminum layer 22N on the titanium tungsten layer 21N. The first region 27P of the metal film 23, on which the mask 51 is formed in step S3, is a region that will become the metal film 20P, and the second region 27N of the metal film 23 is a region that will become the metal film 20N. In the step of removing the portion of the metal film 23 that is exposed from the mask 51, dry etching or wet etching may be performed. The metal film 20P is an example of a first metal film, and the metal film 20N is an example of a second metal film.

[0017] 5 and 13, a step of removing the mask 51 is performed (step S5). Further, a step of forming an insulating film 25P by insulating the surface side of the metal film 20P while ensuring the conduction between the P terminal 11P and the P power supply pad 12P, and a step of forming an insulating film 25N by insulating the surface side of the metal film 20N while ensuring the conduction between the N terminal 11N and the N power supply pad 12N is performed (step S6). For example, by performing a heat treatment at a temperature of about 200° C. in the atmosphere, an aluminum oxide film is formed as the insulating film 25P on the surface of the aluminum layer 22P, and an aluminum oxide film is formed as the insulating film 25N on the surface of the aluminum layer 22N. At this time, the aluminum layer 22P and the aluminum layer 22N are not entirely oxidized, but a portion that ensures the conduction between the P terminal 11P and the P power supply pad 12P is secured in the aluminum layer 22P, and a portion that ensures the conduction between the N terminal 11N and the N power supply pad 12N is secured in the aluminum layer 22N. In the insulation, nitridation may be performed instead of oxidation. The insulating film 25P is an example of a first insulating film, and the insulating film 25N is an example of a second insulating film.

[0018] 6 and 14, a process is performed in which the light emitting element 30 including the base 35, the P electrode 31P, and the N electrode 31N is mounted on the mounting substrate 10 by bringing the P electrode 31P into contact with the upper surface 11PA of the P terminal 11P and the N electrode 31N into contact with the upper surface 11NA of the N terminal 11N (step S7). At this time, a plurality of light emitting elements 30 are mounted on the mounting substrate 10. For example, at a temperature of about 200° C., 10,000 or more light emitting elements 30 are thermocompression-bonded to the mounting substrate 10 with a pressure of 600 N as a whole. For example, the light emitting element 30 is a micro light emitting diode (LED) having a side length of 50 μm or less in a plan view. For example, the surface 31PA of the P electrode 31P facing the P terminal 11P is convex toward the P terminal 11P, and the surface 31NA of the N electrode 31N facing the N terminal 11N is convex toward the N terminal 11N. The surfaces 31PA and 31NA may be convex curved surfaces. The P-electrode 31P is an example of a first electrode, and the N-electrode 31N is an example of a second electrode.

[0019] Next, the light emitting element 30 is inspected (step S8). Examples of the inspection include an electroluminescence (EL) inspection and a photoluminescence (PL) inspection.

[0020] The EL inspection includes a step of applying a voltage between the P power supply pad 12P and the N power supply pad 12N to inspect the light-emitting element 30. In the EL inspection, a light-emitting element 30 that does not emit light even when a voltage is applied thereto is determined to be a light-emitting element 30 that does not satisfy a certain standard (hereinafter, may be referred to as a defective light-emitting element).

[0021] The PL inspection includes a process of irradiating the light-emitting element 30 with excitation light to inspect the light-emitting element 30. In the PL inspection, the P terminal 11P and the N terminal 11N are made non-conductive, and the light-emitting element 30 that does not emit light even when irradiated with excitation light is determined to have an internal short circuit and is determined to be a defective light-emitting element. Note that a metal film may be formed separately from the metal films 20P and 20N to electrically connect the P terminal 11P and the N terminal 11N, and in the PL inspection, the light-emitting element 30 that emits light when irradiated with excitation light is determined to have an internal open circuit and is determined to be a defective light-emitting element.

[0022] Next, as a result of the inspection in step S8, it is determined whether or not there is a defective light-emitting element (step S9). If there is a defective light-emitting element, a process of removing the defective light-emitting element from the mounting substrate 10 is performed (step S10), as shown in Fig. 15. Thereafter, returning to step S7, a process of mounting another light-emitting element 30 on the mounting substrate 10 with the P-electrode 31P in contact with the upper surface 11PA of the P-terminal 11P and the N-electrode 31N in contact with the upper surface 11NA of the N-terminal 11N in the portion where the defective light-emitting element was mounted is performed.

[0023] When the surface 31PA of the P electrode 31P is convex toward the P terminal 11P, the contact area between the surface 31PA and the upper surface 11PA is smaller than when the surface 31PA is flat, and the P electrode 31P can be easily separated from the P terminal 11P. Similarly, when the surface 31NA of the N electrode 31N is convex toward the N terminal 11N, the contact area between the surface 31NA and the upper surface 11NA is smaller than when the surface 31NA is flat, and the N electrode 31N can be easily separated from the N terminal 11N. Therefore, when the surface 31PA of the P electrode 31P is convex toward the P terminal 11P and the surface 31NA of the N electrode 31N is convex toward the N terminal 11N, the defective light-emitting element can be easily removed from the mounting substrate 10.

[0024] Then, the processes of steps S7 to S10 are repeated until no defective light emitting elements remain. If no defective light emitting elements remain in step S9, a process of forming plating films 41P and 41N is performed (step S11) as shown in Figs. 7 and 8. The material of plating films 41P and 41N is, for example, gold. In forming plating films 41P and 41N, for example, an electrolytic gold plating process is performed in association with power supply from P power supply pad 12P and N power supply pad 12N.

[0025] Specifically, as shown in Fig. 7, the P terminal 11P, the N terminal 11N, the P electrode 31P, and the N electrode 31N are immersed in a plating solution 47 while the metal film 20P, the metal film 20N, the insulating film 25P, and the insulating film 25N are formed. A plating solution to which the metal film 20P and the metal film 20N have resistance is used as the plating solution 47. When the metal film 20P is composed of the titanium tungsten layer 21P and the aluminum layer 22P, and the metal film 20N is composed of the titanium tungsten layer 21N and the aluminum layer 22N, aluminum dissolves in an alkaline plating solution, so the plating solution 47 is preferably acidic or neutral, and is particularly preferably an acid cyanide bath. In addition, in the plating process, a cover 46 may be used to prevent the plating solution 47 from coming into contact with the P power supply pad 12P and the N power supply pad 12N.

[0026] As a result of such plating, as shown in FIG. 8, a plating film 41P is formed on the surface of the P terminal 11P and the P electrode 31P while the metal film 20P and the insulating film 25P are formed, and a plating film 41N is formed on the surface of the N terminal 11N and the N electrode 31N while the metal film 20N and the insulating film 25N are formed. Since there is a space between the light emitting element 30 and the mounting substrate 10 before immersion in the plating solution 47, the plating solution 47 easily enters between the light emitting element 30 and the mounting substrate 10, and the plating film 41P and the plating film 41N are easily formed. A part of the plating film 41P is formed on the metal film 20P arranged on a part of the upper surface 11PA of the P terminal 11P, and a part of the plating film 41N is formed on the metal film 20N arranged on a part of the upper surface 11NA of the N terminal 11N. In addition, since the surface 31PA of the P electrode 31P is convex toward the P terminal 11P, a gap exists between the surface 31PA and the upper surface 11PA, but this gap is filled with the plating film 41P. Therefore, excellent bonding strength is obtained between the P electrode 31P and the P terminal 11P. Similarly, because the surface 31NA of the N electrode 31N is convex toward the N terminal 11N, a gap exists between the surface 31NA and the upper surface 11NA, but this gap is filled with the plating film 41N. Therefore, excellent bonding strength is obtained between the N electrode 31N and the N terminal 11N. The plating film 41P is an example of a first plating film, and the plating film 41N is an example of a second plating film.

[0027] On the other hand, insulating film 25P is formed on the surface of metal film 20P, and insulating film 25N is formed on the surface of metal film 20N. Therefore, plating film 41P does not grow from metal film 20P, and plating film 41N does not grow from metal film 20N. Furthermore, since aluminum is a base metal, even if aluminum gets into the plating solution from aluminum layer 22P or aluminum layer 22N, electrodeposition of aluminum is unlikely to occur.

[0028] 9 and 16, a process of removing the insulating film 25P, the metal film 20P, the insulating film 25N, and the metal film 20N is performed (step S12). The insulating film 25P, the metal film 20P, the insulating film 25N, and the metal film 20N can be removed by, for example, wet etching. In the wet etching of the insulating film 25P, the aluminum layer 22P, the insulating film 25N, and the aluminum layer 22N, for example, tetramethylammonium hydroxide (TMAH), sodium hydroxide (NaOH), or an aqueous solution of phosphoric acid, nitric acid, and acetic acid is used as an etchant. When an aqueous solution of phosphoric acid, nitric acid, acetic acid, and water is used as an etchant, for example, an aqueous solution of phosphoric acid, nitric acid, acetic acid, and water may be used in which the mixture ratio is 80 mass % phosphoric acid, 5 mass % nitric acid, 5 mass % acetic acid, and 10 mass % water. In the wet etching of the titanium tungsten layer 21P and the titanium tungsten layer 21N, for example, hydrogen peroxide (H 2 O 2 ) is used as an etchant. The P terminal 11P, the N terminal 11N, the P electrode 31P, the N electrode 31N, the plating film 41P, and the plating film 41N have higher resistance to the etchant used for etching the insulating film 25P, the metal film 20P, the insulating film 25N, and the metal film 20N than the metal film 20P and the metal film 20N. Therefore, when etching the insulating film 25P, the metal film 20P, the insulating film 25N, and the metal film 20N, the P terminal 11P, the N terminal 11N, the P electrode 31P, the N electrode 31N, the plating film 41P, and the plating film 41N are not easily etched. Therefore, it is possible to suppress the formation of sulfurization starting points in the light emitting device 100 and the decrease in the bonding strength between the light emitting element 30 and the mounting substrate 10, which may occur as the etching progresses.

[0029] As described above, a part of the plating film 41P is formed on the metal film 20P arranged on a part of the upper surface 11PA of the P terminal 11P. Therefore, as the insulating film 25P and the metal film 20P are removed, a recess 41PA is formed on the side of the plating film 41P, which includes a part of the upper surface 11PA of the P terminal 11P and is recessed toward the P electrode 31P. Similarly, a part of the plating film 41N is formed on the metal film 20N arranged on a part of the upper surface 11NA of the N terminal 11N. Therefore, as the insulating film 25N and the metal film 20N are removed, a recess 41NA is formed on the side of the plating film 41N, which includes a part of the upper surface 11NA of the N terminal 11N and is recessed toward the N electrode 31N. The recess 41PA is an example of a first recess, and the recess 41NA is an example of a second recess.

[0030] 10, a process of forming a light reflecting material 50 that surrounds the light emitting element 30 in a plan view and is disposed in the recesses 41PA and 41NA on the mounting substrate 10 is performed (step S13). The light reflecting material 50 is formed using a white resin material that contains, for example, titanium oxide powder.

[0031] In this manner, the light emitting device 100 can be manufactured.

[0032] In the light emitting device 100, defective light emitting elements are removed during the manufacturing process and replaced with light emitting elements 30 that meet certain standards. This makes it possible to obtain a high yield. Defective light emitting elements are removed based on inspection of the light emitting elements 30, but in this embodiment, since the metal films 20P and 20N are formed, inspection of the light emitting elements 30 can be performed before the formation of the plating films 41P and 41N. This makes it possible to easily remove defective light emitting elements.

[0033] Moreover, the light reflecting material 50 not only surrounds the light emitting element 30 in a plan view, but is also disposed in the recesses 41PA and 41NA. Therefore, due to an anchor effect, the adhesion between the light reflecting material 50 and the mounting substrate 10 and the light emitting element 30 is improved, and detachment of the light reflecting material 50 from the light emitting device 100 can be suppressed.

[0034] Furthermore, since the metal film 20P is formed so as to cover a part of the upper surface 11PA of the P terminal 11P and a part of the upper surface 12PA of the P power supply pad 12P, it is easy to ensure conduction between the metal film 20P and the P terminal 11P and the P power supply pad 12P even if there is a slight misalignment in the position of the mask 51. Similarly, since the metal film 20N is formed so as to cover a part of the upper surface 11NA of the N terminal 11N and a part of the upper surface 12NA of the N power supply pad 12N, it is easy to ensure conduction between the metal film 20N and the N terminal 11N and the N power supply pad 12N even if there is a slight misalignment in the position of the mask 51.

[0035] In step S9, the presence or absence of defective light-emitting elements is determined, and if the ratio of defective light-emitting elements is equal to or greater than a predetermined value, the process may proceed to step S10, and if it is less than the predetermined value, the process may proceed to step S11. That is, for example, if a lighting rate equal to or greater than a reference value is obtained in light-emitting device 100, plating films 41P and 41N may be formed in step S11 without proceeding to step S10 even if the lighting rate is not 100%.

[0036] Second embodiment Next, a second embodiment will be described. The second embodiment differs from the first embodiment mainly in the method of forming the metal film 20P and the metal film 20N. Figures 17 to 19 are cross-sectional views showing a method of manufacturing the light emitting device according to the second embodiment.

[0037] In the second embodiment, first, a step of preparing the mounting substrate 10 is performed similarly to the first embodiment. Then, as shown in Fig. 17, a step of forming a mask 52 on the front surface side of the mounting substrate 10 excluding the first region 27P and the second region 27N is performed. The mask 52 is formed, for example, by applying, exposing, and developing a resist.

[0038] 18, a process of forming a metal film 23 that covers the surface of the mask 52 and the portion of the surface of the mounting substrate 10 that is exposed through the mask 52 is performed. The metal film 23 can be formed by a method similar to that of the first embodiment. The metal film 23 is formed on the upper surface of the mask 52, but is not formed on the side surfaces of the mask 52.

[0039] 19, a process of removing the mask 52 and the metal film 23 formed on the mask 52 is performed. That is, lift-off is performed. As a result, the metal film 20P that electrically connects the P terminal 11P and the P power supply pad 12P is formed in the first region 27P of the metal film 23 so as to cover a part of the upper surface 11PA of the P terminal 11P and a part of the upper surface 12PA of the P power supply pad 12P. In addition, the metal film 20N that electrically connects the N terminal 11N and the N power supply pad 12N is formed in the second region 27N of the metal film 23 so as to cover a part of the upper surface 11NA of the N terminal 11N and a part of the upper surface 12NA of the N power supply pad 12N.

[0040] Thereafter, similarly to the first embodiment, the steps following the step of forming the insulating film 25P and the insulating film 25N are performed.

[0041] In this manner, the light emitting device 100 can be manufactured.

[0042] In the second embodiment, as in the first embodiment, defective light emitting elements are removed during the manufacturing process of the light emitting device 100 and replaced with light emitting elements 30 that satisfy a certain standard, so that a high yield can be obtained. In addition, detachment of the light reflecting material 50 from the light emitting device 100 can be suppressed.

[0043] Even if the position of the mask 52 is slightly misaligned, it is easy to ensure conduction between the metal film 20P and the P terminal 11P and the P power supply pad 12P, and it is easy to ensure conduction between the metal film 20N and the N terminal 11N and the N power supply pad 12N.

[0044] (Modification of the second embodiment) Next, a modified example of the second embodiment will be described. The modified example of the second embodiment differs from the second embodiment mainly in the shape of the mask. Figures 20 to 21 are cross-sectional views showing a method for manufacturing a light emitting device according to the modified example of the second embodiment.

[0045] In the modified example of the second embodiment, first, a step of preparing the mounting substrate 10 is performed similarly to the first embodiment. Next, as shown in Fig. 20, a step of forming a mask 53 is performed on the front surface side of the mounting substrate 10 excluding the first region 27P and the second region 27N when viewed from above. The opening of the mask 53 has a tapered shape that widens as it approaches the mounting substrate 10. The mask 53 is formed, for example, by applying, exposing, and developing a resist.

[0046] 21, a process of forming a metal film 23 that covers the surface of the mask 53 and the portion of the surface of the mounting substrate 10 that is exposed through the mask 53 is performed. The metal film 23 can be formed by the same method as in the first embodiment. The metal film 23 is formed on the upper surface of the mask 52, but is not formed on the side surface of the mask 53. In addition, since the opening of the mask 53 has a tapered shape, the aluminum layer 22 covers not only the upper surface but also the side surface of the titanium tungsten layer 21 on the upper surface 11PA of the P terminal 11P, the upper surface 11NA of the N terminal 11N, the upper surface 12PA of the P power supply pad 12P, and the upper surface 12NA of the N power supply pad 12N.

[0047] Next, similarly to the second embodiment, a process of removing the mask 53 and the metal film 23 formed on the mask 53 is carried out.

[0048] Thereafter, similarly to the first embodiment, the steps following the step of forming the insulating film 25P and the insulating film 25N are performed.

[0049] In this manner, the light emitting device 100 can be manufactured.

[0050] In the modified example of the second embodiment, the aluminum layer 22 is formed so as to cover not only the top surface but also the side surfaces of the titanium tungsten layer 21. Therefore, the side surfaces of the titanium tungsten layer 21P are covered with the insulating film 25P, and the side surfaces of the titanium tungsten layer 21N are covered with the insulating film 25N. Therefore, the titanium tungsten layer 21P and the titanium tungsten layer 21N do not come into contact with the plating solution 47, and it is possible to suppress the growth of the plating film 41P from the titanium tungsten layer 21P and the growth of the plating film 41N from the titanium tungsten layer 21N.

[0051] (Example of metal film arrangement) Next, examples of the arrangement of the metal film connected to the P terminal 11P and the metal film connected to the N terminal 11N will be described. Fig. 22 is a top view showing a first example of the arrangement of the metal film. Fig. 23 is a top view showing a second example of the arrangement of the metal film.

[0052] In the first example, as shown in FIG. 22, the P terminals 11P and the N terminals 11N are alternately arranged along the X axis. Two rows of the P terminals 11P and the N terminals 11N are provided, but three or more rows may be provided. In the example shown in FIG. 22, the two rows of the P terminals 11P and the N terminals 11N are aligned along the Y axis. Two P terminals 11P are aligned along the Y axis, and two N terminals 11N are aligned along the Y axis. The P power supply pad 12P and the N power supply pad 12N extending along the X axis are arranged between the two rows of the P terminals 11P and the N terminals 11N. For example, the P power supply pad 12P is located on the +Y side of the N power supply pad 12N. The light emitting element 30 is mounted on the P terminals 11P and the N terminals 11N adjacent to each other along the X axis, with the P electrode 31P in contact with the P terminal 11P and the N electrode 31N in contact with the N terminal 11N. Moreover, in the first example, metal films 20PA and 20PB are provided in place of the metal film 20P, and metal films 20NA and 20NB are provided in place of the metal film 20N.

[0053] The metal film 20PA is provided so as to contact the P terminal 11P and P power supply pad 12P located on the +Y side. The metal film 20PB is provided so as to contact the P terminal 11P located on the +Y side and the P terminal 11P located on the -Y side. When three or more rows of P terminals 11P and N terminals 11N are provided, the metal film 20PA is provided so as to contact the P terminal 11P and P power supply pad 12P located closest to the +Y side. The metal film 20PB is provided so as to contact two P terminals 11P adjacent to each other along the Y axis.

[0054] The metal film 20NA is provided so as to contact the N terminal 11N and N power supply pad 12N located on the -Y side. The metal film 20NB is provided so as to contact the N terminal 11N located on the +Y side and the N terminal 11N located on the -Y side. When three or more rows of P terminals 11P and N terminals 11N are provided, the metal film 20NB is provided so as to contact the N terminal 11N and N power supply pad 12N located furthest on the -Y side. The metal film 20NB is provided so as to contact two N terminals 11N adjacent along the Y axis.

[0055] In an EL test, when a forward voltage is applied between the P power supply pad 12P and the N power supply pad 12N, that is, a voltage that makes the potential of the P power supply pad 12P higher than the potential of the N power supply pad 12N, the forward voltage is supplied to all the light-emitting elements 30. Therefore, if all the light-emitting elements 30 are normal, all the light-emitting elements 30 emit light.

[0056] Therefore, in the first example, the light emitting states of all the light emitting elements 30 can be confirmed by applying a voltage once.

[0057] In the second example, as shown in Fig. 23, the P terminal 11P, the N terminal 11N, the P power supply pad 12P, and the N power supply pad 12N are arranged in the same manner as in the first example. As in the first example, three or more rows of the P terminals 11P and the N terminals 11N may be provided. The light emitting element 30 is mounted on the P terminal 11P and the N terminal 11N adjacent to each other along the X-axis with the P electrode 31P in contact with the P terminal 11P and the N electrode 31N in contact with the N terminal 11N. In the second example, metal films 20SA, 20SB, 20SC, and 20SD are provided instead of the metal film 20P, and metal films 20TA, 20TB, 20TC, and 20TD are provided instead of the metal film 20N.

[0058] The metal film 20SA is provided so as to contact the P terminal 11P and the P power supply pad 12P located on the +Y side. However, the metal film 20SA is provided so as to contact not all of the P terminals 11P located on the +Y side, but every other P terminal 11P located on the +Y side along the X axis. The metal film 20SB is provided so as to contact the P terminal 11P on which the metal film 20SA is provided and the P terminal 11P located on the -Y side thereof. The metal film 20SC is provided so as to contact the P terminal 11P on which the metal film 20SA is provided and the N terminal 11N located on the -X side thereof. The metal film 20SD is provided so as to contact the P terminal 11P on which the metal film 20SB is provided and the P terminal 11P on which the metal film 20SA is not provided and the N terminal 11N located on the -X side thereof.

[0059] When three or more rows of P terminals 11P and N terminals 11N are provided, the metal film 20SA is provided so as to contact the P terminals 11P and P power supply pads 12P located on the +Y side every other row along the X axis. The metal film 20SB is provided so as to contact two P terminals 11P adjacent to each other along the Y axis. The metal film 20SC is provided so as to contact the P terminal 11P on which the metal film 20SA is provided and the N terminal 11N located on the -X side thereof. The metal film 20SD is provided so as to contact the P terminal 11P on which the metal film 20SB is provided on the +Y side and the N terminal 11N located on the -X side thereof.

[0060] The metal film 20TA is provided so as to contact the P terminal 11P and the N power supply pad 12N located on the -Y side. However, the metal film 20TA is provided so as to contact not all of the P terminals 11P located on the -Y side, but every other P terminal 11P located on the -Y side along the X axis. More specifically, the metal film 20TA is provided so as to contact the P terminal 11P located on the -Y side that is not in contact with the metal film 20SB. The metal film 20TB is provided so as to contact the P terminal 11P provided with the metal film 20TA and the P terminal 11P located on the +Y side thereof. The metal film 20TC is provided so as to contact the P terminal 11P provided with the metal film 20TA and the N terminal 11N located on the -X side thereof. The metal film 20TD is provided so as to contact the P terminal 11P provided with the metal film 20TB and not provided with the metal film 20TA, and the N terminal 11N located on the -X side thereof.

[0061] When three or more rows of P terminals 11P and N terminals 11N are provided, the metal film 20TA is provided so as to contact the P terminals 11P and N power supply pads 12N that are located on the -Y side every other row along the X axis and are not in contact with the metal film 20SB. The metal film 20TB is provided so as to contact two P terminals 11P adjacent to each other along the Y axis. The metal film 20TC is provided so as to contact the P terminal 11P on which the metal film 20TA is provided and the N terminal 11N located on the -X side thereof. The metal film 20TD is provided so as to contact the P terminal 11P on which the metal film 20TB is provided on the -Y side thereof and the N terminal 11N located on the -X side thereof.

[0062] When a forward voltage is applied between the P power supply pad 12P and the N power supply pad 12N in the EL test, the forward voltage is supplied to the light-emitting element 30 in which the P electrode 31P is connected to the P power supply pad 12P through the metal film 20SA and the N electrode 31N is connected to the N power supply pad 12N through the metal film 20TA. On the other hand, a reverse voltage is supplied to the light-emitting element 30 in which the P electrode 31P is connected to the N power supply pad 12N through the metal film 20TA and the N electrode 31N is connected to the P power supply pad 12P through the metal film 20SA. Therefore, even if all the light-emitting elements 30 are normal, only half of the light-emitting elements 30 emit light.

[0063] In the EL inspection, when a reverse voltage is applied between the P power supply pad 12P and the N power supply pad 12N, that is, a voltage that makes the potential of the N power supply pad 12N higher than the potential of the P power supply pad 12P, a forward voltage is supplied to the light-emitting element 30 in which the P electrode 31P is connected to the N power supply pad 12N through the metal film 20TA and the N electrode 31N is connected to the P power supply pad 12P through the metal film 20SA. On the other hand, a reverse voltage is supplied to the light-emitting element 30 in which the P electrode 31P is connected to the P power supply pad 12P through the metal film 20SA and the N electrode 31N is connected to the N power supply pad 12N through the metal film 20TA. Therefore, even in this case, even if all the light-emitting elements 30 are normal, only half of the light-emitting elements 30 emit light.

[0064] Therefore, in the second example, the overall emission intensity is lower than in the first example, and it is easier to detect the light-emitting elements 30 that do not emit light.

[0065] This specification includes the following embodiments. 1. forming a first metal film electrically connecting the first terminal and the first pad on a mounting substrate including a first terminal, a second terminal, a first pad, and a second pad, so as to cover a part of an upper surface of the first terminal and a part of an upper surface of the first pad, and forming a second metal film electrically connecting the second terminal and the second pad, so as to cover a part of an upper surface of the second terminal and a part of an upper surface of the second pad; forming a first insulating film by insulating a surface side of the first metal film while ensuring electrical continuity between the first terminal and the first pad, and forming a second insulating film by insulating a surface side of the second metal film while ensuring electrical continuity between the second terminal and the second pad; a step of mounting a light emitting element including a first electrode and a second electrode on the mounting substrate by bringing the first electrode into contact with an upper surface of the first terminal and bringing the second electrode into contact with an upper surface of the second terminal; forming a first plating film on a surface of the first terminal and the first electrode while the first metal film and the first insulating film are still formed, and forming a second plating film on a surface of the second terminal and the second electrode while the second metal film and the second insulating film are still formed; a step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film after the step of forming the first plating film and the second plating film; The method for manufacturing a light emitting device comprising the steps of: 2. The step of forming the first metal film and the second metal film includes: forming a third metal film that covers at least the first terminal, the second terminal, the first pad, the second pad, a first portion exposed between the first terminal and the first pad on the surface of the mounting substrate, and a second portion exposed between the second terminal and the second pad on the surface of the mounting substrate; forming a mask on a first region of the third metal film that will become the first metal film and a second region of the third metal film that will become the second metal film; removing a portion of the third metal film exposed through the mask; removing the mask; 2. A method for producing the light emitting device according to claim 1, comprising the steps of: 3. The step of forming the first metal film and the second metal film includes: forming a mask on a front surface side of the mounting substrate excluding a first region where the first metal film is to be formed and a second region where the second metal film is to be formed; forming a third metal film that covers a surface of the mask and a portion of the surface of the mounting substrate that is exposed through the mask; removing the mask and the third metal film formed on the mask; 2. A method for producing the light emitting device according to claim 1, comprising the steps of: 4. In the step of forming the first metal film and the second metal film, the first metal film and the second metal film are made of a plurality of layers, 4. The method for manufacturing a light emitting device according to any one of 1 to 3 above, wherein the layer located on the outermost surface side of the first metal film and the second metal film contains aluminum, chromium, or an alloy of tungsten and titanium. 5. in the step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film, the first insulating film, the first metal film, the second insulating film, and the second metal film are removed by etching; 5. A method for manufacturing a light emitting device described in any one of 1 to 4 above, wherein the first terminal, the second terminal, the first electrode, the second electrode, the first plating film and the second plating film have higher resistance to an etchant used in the etching than the first metal film and the second metal film. 6. In the step of forming the first plating film and the second plating film, the first plating film is formed on the first metal film disposed on a portion of an upper surface of the first terminal, and the second plating film is formed on the second metal film disposed on a portion of an upper surface of the second terminal; in a step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film, a first recess including a part of an upper surface of the first terminal and recessed toward the first electrode is formed on a side surface of the first plating film, and a second recess including a part of an upper surface of the second terminal and recessed toward the second electrode is formed on a side surface of the second plating film; 6. A method for manufacturing a light emitting device described in any one of 1 to 5 above, comprising, after a step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film, a step of forming a light reflective material on the mounting substrate, the light emitting element being surrounded in a planar view and being placed in the first recess and the second recess. 7. a surface of the first electrode facing the first terminal is convex toward the first terminal; 7. The method for manufacturing a light emitting device according to any one of 1 to 6, wherein a surface of the second electrode facing the second terminal is convex toward the second terminal. 8. Between the step of mounting the light emitting element on the mounting substrate and the step of forming the first plating film and the second plating film, applying a voltage between the first pad and the second pad to inspect the light emitting device; removing the light emitting device from the mounting substrate according to a result of the inspection; a step of mounting another light emitting element having a first electrode and a second electrode on the mounting substrate by bringing the first electrode of the other light emitting element into contact with an upper surface of the first terminal and bringing the second electrode of the other light emitting element into contact with an upper surface of the second terminal; 8. A method for producing a light emitting device according to any one of 1 to 7 above, comprising: 9. Between the step of mounting the light emitting element on the mounting substrate and the step of forming the first plating film and the second plating film, A step of inspecting the light emitting element by irradiating the light emitting element with excitation light; removing the light emitting device from the mounting substrate according to a result of the inspection; a step of mounting another light emitting element having a first electrode and a second electrode on the mounting substrate by bringing the first electrode of the other light emitting element into contact with an upper surface of the first terminal and bringing the second electrode of the other light emitting element into contact with an upper surface of the second terminal; 8. A method for producing a light emitting device according to any one of 1 to 7 above, comprising: 10. a mounting substrate including a first terminal, a second terminal, a first pad, and a second pad; a light emitting element including a first electrode and a second electrode, the first electrode being in contact with an upper surface of the first terminal, and the second electrode being in contact with an upper surface of the second terminal; a first plating film formed on a surface of the first terminal and the first electrode; a second plating film formed on a surface of the second terminal and the second electrode; a light reflecting material formed on the mounting substrate and surrounding the light emitting element in a plan view; having a first recess that includes a portion of an upper surface of the first terminal and is recessed toward the first electrode is formed on a side surface of the first plating film; a second recess that includes a portion of an upper surface of the second terminal and is recessed toward the second electrode is formed on a side surface of the second plating film; The light emitting device, wherein the light reflecting material is disposed in the first recess and the second recess. [Explanation of symbols]

[0066] 10: Mounting board 11P:P terminal 11PA:Top surface 11N:N terminal 11NA:Top surface 12P:P power supply pad 12PA:Top surface 12N:N Power Supply Pad 12NA:Top surface 13P: 1st part 13N: 2nd part 20P, 20PA, 20PB, 20N, 20NA, 20NB, 20SA, 20SB, 20SC, 20SD, 20TA, 20TB, 20TC, 20TD, 23: Metal film 25P, 25N: insulating film 27P: 1st area 27N:Second area 30: Light emitting element 31P:P electrode 31N:N electrode 31PA, 31NA: Surface 41P, 41N: Plating film 41PA, 41NA: Concave 50: Light reflective material 51, 52, 53: Mask 100: Light emitting device

Claims

1. forming a first metal film electrically connecting the first terminal and the first pad on a mounting substrate including a first terminal, a second terminal, a first pad, and a second pad, so as to cover a part of an upper surface of the first terminal and a part of an upper surface of the first pad, and forming a second metal film electrically connecting the second terminal and the second pad, so as to cover a part of an upper surface of the second terminal and a part of an upper surface of the second pad; forming a first insulating film by insulating a surface side of the first metal film while ensuring electrical continuity between the first terminal and the first pad, and forming a second insulating film by insulating a surface side of the second metal film while ensuring electrical continuity between the second terminal and the second pad; a step of mounting a light emitting element including a first electrode and a second electrode on the mounting substrate by bringing the first electrode into contact with an upper surface of the first terminal and bringing the second electrode into contact with an upper surface of the second terminal; forming a first plating film on a surface of the first terminal and the first electrode while the first metal film and the first insulating film are formed, and forming a second plating film on a surface of the second terminal and the second electrode while the second metal film and the second insulating film are formed; a step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film after the step of forming the first plating film and the second plating film; The method for manufacturing a light emitting device comprising the steps of:

2. The step of forming the first metal film and the second metal film includes: forming a third metal film that covers at least the first terminal, the second terminal, the first pad, the second pad, a first portion exposed between the first terminal and the first pad on the surface of the mounting substrate, and a second portion exposed between the second terminal and the second pad on the surface of the mounting substrate; forming a mask on a first region of the third metal film that is to become the first metal film and a second region of the third metal film that is to become the second metal film; removing a portion of the third metal film exposed through the mask; removing the mask; The method for manufacturing a light emitting device according to claim 1 , comprising:

3. The step of forming the first metal film and the second metal film includes: forming a mask on a front surface side of the mounting substrate excluding a first region where the first metal film is to be formed and a second region where the second metal film is to be formed; forming a third metal film covering a surface of the mask and a portion of the surface of the mounting substrate exposed through the mask; removing the mask and the third metal film formed on the mask; The method for manufacturing a light emitting device according to claim 1 , comprising:

4. In the step of forming the first metal film and the second metal film, the first metal film and the second metal film are made of a plurality of layers, The method for manufacturing a light emitting device according to claim 1 , wherein a layer located on an outermost surface side of the first metal film and the second metal film contains aluminum, chromium, or an alloy of tungsten and titanium.

5. removing the first insulating film, the first metal film, the second insulating film, and the second metal film by etching; 4. The method for manufacturing a light emitting device according to claim 1, wherein the first terminal, the second terminal, the first electrode, the second electrode, the first plating film and the second plating film have higher resistance to an etchant used in the etching than the first metal film and the second metal film.

6. In the step of forming the first plating film and the second plating film, the first plating film is formed on the first metal film disposed on a portion of the upper surface of the first terminal, and the second plating film is formed on the second metal film disposed on a portion of the upper surface of the second terminal; In a step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film, a first recess is formed on a side surface of the first plating film, the first recess including a part of an upper surface of the first terminal and recessed toward the first electrode, and a second recess is formed on a side surface of the second plating film, the second recess including a part of an upper surface of the second terminal and recessed toward the second electrode; 4. The method for manufacturing a light emitting device according to claim 1, further comprising, after a step of removing the first insulating film, the first metal film, the second insulating film, and the second metal film, a step of forming a light reflective material on the mounting substrate, the light emitting element being surrounded in a planar view and being placed in the first recess and the second recess.

7. a surface of the first electrode facing the first terminal is convex toward the first terminal; The method for manufacturing a light emitting device according to claim 1 , wherein a surface of the second electrode facing the second terminal is convex toward the second terminal.

8. Between the step of mounting the light emitting element on the mounting substrate and the step of forming the first plating film and the second plating film, applying a voltage between the first pad and the second pad to inspect the light emitting device; removing the light emitting device from the mounting substrate according to a result of the inspection; a step of mounting another light emitting element having a first electrode and a second electrode on the mounting substrate by bringing the first electrode of the other light emitting element into contact with an upper surface of the first terminal and bringing the second electrode of the other light emitting element into contact with an upper surface of the second terminal; The method for manufacturing the light emitting device according to claim 1 , further comprising:

9. Between the step of mounting the light emitting element on the mounting substrate and the step of forming the first plating film and the second plating film, A step of inspecting the light emitting element by irradiating the light emitting element with excitation light; removing the light emitting device from the mounting substrate according to a result of the inspection; a step of mounting another light emitting element having a first electrode and a second electrode on the mounting substrate by bringing the first electrode of the other light emitting element into contact with an upper surface of the first terminal and bringing the second electrode of the other light emitting element into contact with an upper surface of the second terminal; The method for manufacturing the light emitting device according to claim 1 , further comprising:

10. a mounting substrate including a first terminal, a second terminal, a first pad, and a second pad; a light emitting element including a first electrode and a second electrode, the first electrode being in contact with an upper surface of the first terminal, and the second electrode being in contact with an upper surface of the second terminal; a first plating film formed on a surface of the first terminal and the first electrode; a second plating film formed on a surface of the second terminal and the second electrode; a light reflecting material formed on the mounting substrate and surrounding the light emitting element in a plan view; having a first recess that includes a portion of an upper surface of the first terminal and is recessed toward the first electrode is formed on a side surface of the first plating film; a second recess that includes a part of an upper surface of the second terminal and is recessed toward the second electrode is formed on a side surface of the second plating film; The light reflective material is disposed in the first recess and the second recess.

Images