Semiconductor device and manufacturing method therefor

Abstract

To provide a semiconductor device with which it is possible to suppress a reduction in thermal conductivity, and a method for manufacturing the same.SOLUTION: A semiconductor device in an embodiment includes a semiconductor chip, a substrate, and an adhesive layer. The substrate supports the semiconductor chip. The adhesive layer is disposed between the semiconductor chip and the substrate. The adhesive layer adheres the semiconductor chip and the substrate. The adhesive layer includes a first section and a second section. The first section is formed from a first material. A plurality of second sections are formed from a second material. The second material has a larger coefficient of elasticity and a higher coefficient of thermal conductivity than the first material. The plurality of second sections are located inside of the first section. The plurality of second sections respectively connect the semiconductor chip and the substrate adjacently thereto.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor device and a manufacturing method thereof. [Background technology]

[0002] In a semiconductor device in which a semiconductor chip is mounted on a substrate such as a lead frame, the semiconductor chip and the substrate are bonded via an adhesive such as a die attach material. To maximize the performance of the semiconductor chip, it is necessary to efficiently dissipate heat generated during operation. For this reason, the adhesive is formed by blending a highly thermally conductive material such as silver filler, which has high thermal conductivity, into a resin material such as epoxy resin or acrylic resin.

[0003] Increasing the proportion of high thermal conductivity material in the adhesive improves the heat dissipation performance of semiconductor chips due to their operation. The substrate expands due to heat transmitted from the semiconductor chip, but the resin material in the adhesive has a low modulus of elasticity, allowing it to expand in response to the expansion of the substrate. If the proportion of low-modulus resin material in the adhesive decreases and the proportion of high-modulus thermal conductivity material increases, it becomes difficult for the adhesive to expand in response to the expansion of the substrate. In this case, the adhesive may peel off due to stresses caused by moisture absorption reflow or temperature cycle testing. If an air gap is created on the surface of the substrate due to adhesive peeling, thermal conductivity may decrease. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6360157 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a semiconductor device capable of suppressing a decrease in thermal conductivity and a method for manufacturing the same. [Means for solving the problem]

[0006] The semiconductor device of the embodiment has a semiconductor chip, a substrate, and an adhesive layer. The substrate supports the semiconductor chip. The adhesive layer is disposed between the semiconductor chip and the substrate. The adhesive layer bonds the semiconductor chip and the substrate. The adhesive layer has a first portion and a plurality of second portions. The first portion is formed of a first material. The plurality of second portions are formed of a second material. The second material has a higher elastic modulus and higher thermal conductivity than the first material. The plurality of second portions are located inside the first portion. Each of the plurality of second portions contacts and connects the semiconductor chip and the substrate. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view showing a semiconductor device according to a first embodiment. [Figure 2] FIG. 1 is a plan view showing a semiconductor device according to a first embodiment. [Figure 3] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 4] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 5] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 6] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 7] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 8] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 9] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 10] 2A to 2C are diagrams showing steps of a method for manufacturing a semiconductor device according to the first embodiment. [Figure 11] FIG. 10 is a plan view showing a semiconductor device according to a second embodiment. [Figure 12]FIG. 10 is a plan view showing a semiconductor device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a semiconductor device according to an embodiment and a method for manufacturing the same will be described with reference to the drawings.

[0009] In the following description, components having the same or similar functions are denoted by the same reference numerals, and redundant descriptions of those components may be omitted.

[0010] (First embodiment) The configuration of the semiconductor device according to the first embodiment will be described below. FIG. 1 is a cross-sectional view of a semiconductor device 1. As shown in FIG.

[0011] 1, the semiconductor device 1 includes a semiconductor chip 2, a substrate 3, and an adhesive layer 10. The substrate 3 is, for example, a lead frame electrically connected to the semiconductor chip 2 by wire bonding. In the following description, the substrate 3 will be referred to as the lead frame 3.

[0012] The lead frame 3 supports the semiconductor chip 2. The lead frame 3 is made of, for example, copper.

[0013] In the following description, the direction in which the semiconductor chip 2, adhesive layer 10, and substrate 3 are stacked and arranged is referred to as the vertical direction. The side in the vertical direction on which the semiconductor chip 2 is arranged is referred to as the "upper side." The side in the vertical direction on which the lead frame 3 is arranged is referred to as the "lower side." The direction perpendicular to the vertical direction is referred to as the horizontal direction. The horizontal direction is referred to as the "left side" and "right side" as appropriate.

[0014] Note that the terms upper side, lower side, left side, and right side are simply names used to explain the relative positional relationship of each part, and the actual positional relationship may be one other than the positional relationship indicated by these names.

[0015] The adhesive layer 10 is disposed between the semiconductor chip 2 and the lead frame 3. The adhesive layer 10 bonds the semiconductor chip 2 and the lead frame 3. The adhesive layer 10 is, for example, a die attach material. The adhesive layer 10 has a first portion 11 and a second portion 12. The first portion 11 is formed of a first material. The first material is a material with a low elastic modulus and low thermal conductivity. Examples of the first material include epoxy resin and acrylic resin.

[0016] FIG. 2 is a plan view of the semiconductor device 1. As shown in FIG. 2, the adhesive layer 10 is formed over an area larger in the horizontal direction than the semiconductor chip 2. A first portion 11 of the adhesive layer 10 is formed over an area larger in the horizontal direction than the semiconductor chip 2.

[0017] The second portion 12 is located inside the first portion 11. A plurality of second portions 12 are provided. In a plan view, a plurality of rows of the second portions 12 are arranged at intervals in the vertical direction, and a plurality of rows are arranged at intervals in the horizontal direction. In this embodiment, the vertical positions of the second portions 12 in rows adjacent to each other in the horizontal direction are the same. That is, the second portions 12 are arranged in a grid pattern in a plan view seen in the direction in which the semiconductor chips 2 and the lead frames 3 are aligned.

[0018] The second portions 12 each contact the semiconductor chip 2 and the lead frame 3. The second portions 12 each contact the bottom surface 2a of the semiconductor chip 2 from below. The second portions 12 each contact the top surface 3a of the lead frame 3 from above. The second portions 12 each connect the semiconductor chip 2 and the lead frame 3.

[0019] The second portion 12 is formed of a second material. The second material has a higher elastic modulus and higher thermal conductivity than the first material. Examples of the second material include metals with high thermal conductivity and ceramic materials such as aluminum nitride. The second material of this embodiment contains metal particles. By including metal particles in the second material, heat can be dissipated efficiently from the semiconductor chip 2 to the lead frame 3.

[0020] The metal with high thermal conductivity is not particularly limited, but examples include gold, silver, copper, and aluminum. In this embodiment, the second material contains silver nanoparticles ranging from several nanometers to several thousand nanometers. The second portion 12 is formed by heating and hardening the second material, which is a binder paste containing the silver nanoparticles.

[0021] The second portions 12 each extend in the vertical direction and are columnar in shape, connecting the semiconductor chip 2 and the lead frame 3. The second portions 12 each extend in the vertical direction and are columnar in shape, connecting the semiconductor chip 2 and the lead frame 3, thereby enabling the semiconductor chip 2 and the lead frame 3 to be connected over the shortest distance. The second portions 12 each connect the semiconductor chip 2 and the lead frame 3 over the shortest distance, improving heat dissipation from the semiconductor chip 2 to the lead frame 3 via the second portions 12.

[0022] In the semiconductor device 1 of the embodiment, heat dissipation from the semiconductor chip 2 to the lead frame 3 is improved, so the proportion of the second portion 12 in the adhesive layer 10 can be reduced. Because the proportion of the second portion 12 in the adhesive layer 10 can be reduced, the proportion of the first portion 11 formed of a first material having a lower elastic modulus than the second portion 12 can be increased. In the semiconductor device 1 of the embodiment, because the proportion of the first portion 11 in the adhesive layer 10 can be increased, the adhesive layer 10 can expand in response to the expansion of the lead frame 3, which expands due to heat transferred from the semiconductor chip.

[0023] Each of the second portions 12 has a cylindrical shape with a circular cross section. Since the second portions 12 have a cylindrical shape with a circular cross section, when the first material is applied around the second portions 12 to form the first portions 11, the fluidity of the first material can be improved compared to when the second portions 12 have a rectangular cross section, for example.

[0024] The plurality of second portions 12 preferably have a diameter of 100 μm or more, and 200 μm or more. If the diameter of the second portions 12 is less than 100 μm, the strength when the semiconductor chip 2 is mounted and the bending strength when the first material is applied around the second portions 12 may be insufficient. Furthermore, if the diameter of the second portions 12 is less than 100 μm, the cross-sectional area may be small, which may result in insufficient heat dissipation from the semiconductor chip 2 to the lead frame 3. If the diameter of the plurality of second portions 12 exceeds 200 μm, there is a possibility that the first portions 11 may be prevented from expanding in response to the expansion of the lead frame 3 caused by heat transmitted from the semiconductor chip. By making the diameters of the multiple second portions 12 100 μm or more and 200 μm or more, respectively, it is possible to ensure the strength when the semiconductor chip 2 is mounted, the bending strength when the first material is applied around the second portions 12, heat dissipation from the semiconductor chip 2 to the lead frame 3, and the ability of the first portions 11 to expand in response to the expansion of the lead frame 3.

[0025] The total area of ​​the second portions 12 in contact with the semiconductor chip 2 is preferably 1 / 8 to 1 / 4 of the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10. If the total area of ​​the second portions 12 is less than 1 / 8 of the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10, heat dissipation from the semiconductor chip 2 to the lead frame 3 may be insufficient. If the total area of ​​the second portions 12 exceeds 1 / 4 of the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10, it may hinder the first portions 11 from expanding in response to the expansion of the lead frame 3, which expands due to heat transmitted from the semiconductor chip. By making the total area of ​​the second portions 12 greater than or equal to 1 / 8 and less than or equal to 1 / 4 of the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10, it is possible to ensure that the first portions 11 expand in accordance with the heat dissipation from the semiconductor chip 2 to the lead frame 3 and the expansion of the lead frame 3.

[0026] When the area of ​​the second portion 12 is the same as the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10, the thermal conductivity is 429 W / m·K. The thermal conductivity that is desired to be achieved is approximately 50 W / m·K to 100 W / m·K. By making the total area of ​​the multiple second portions 12 in contact with the semiconductor chip 2 greater than or equal to 1 / 8 and less than or equal to 1 / 4 of the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10, it becomes possible to ensure the desired thermal conductivity of 50 W / m·K to 100 W / m·K.

[0027] In the semiconductor device 1 of the embodiment, heat dissipation is improved because the second portion 12 directly connects the semiconductor chip 2 and the lead frame 3. In the semiconductor device 1 of the embodiment, the first portion 11, which has a small elastic modulus, is arranged around the second portion 12, so that stress caused by the difference in linear expansion coefficient between the semiconductor chip 2 and the lead frame 3 during moisture absorption / reflow and temperature cycle tests can be absorbed, and peeling can be suppressed.

[0028] Next, a method for manufacturing the semiconductor device 1 described above will be described with reference to Figures 3 to 10. Figures 3 to 10 are diagrams showing the steps of the method for manufacturing the semiconductor device 1 according to the first embodiment.

[0029] A manufacturing method of a semiconductor device 1 includes forming an adhesive layer 10 on a lead frame 3, the adhesive layer 10 having a first portion 11 made of a first material and multiple second portions 12 made of a second material having a higher elastic modulus and higher thermal conductivity than the first material, and mounting a semiconductor chip 2 on the side of the adhesive layer 10 opposite the lead frame 3. Forming the adhesive layer 10 includes applying a second material onto the lead frame 3 to form multiple second portions 12 in contact with the lead frame 3, and applying a first material onto the lead frame 3 to form a first portion 11 in which the multiple second portions 12 are located and in contact with the lead frame 3. Mounting the semiconductor chip 2 includes bringing the semiconductor chip 2 into contact with the first portion 11 and the second portion 12 and connecting it to the lead frame 3 via the first portion 11 and the second portion 12.

[0030] In the manufacturing method of the semiconductor device 1 of the embodiment, there is no particular limitation on the method for forming the adhesive layer 10. In this embodiment, the adhesive layer 10 is formed by sequentially forming the second portion 12 and the first portion 11 by screen printing.

[0031] Among the steps of forming the adhesive layer 10, forming the second portion 12 by screen printing includes placing a first screen plate 20A on the upper surface 3a of the lead frame 3, molding the second portion 12 using the first screen plate 20A, and semi-curing the molded second portion 12, as shown in FIG. 3.

[0032] The first screen plate 20A has first screen holes 22 for forming the second portion 12. The thickness of the first screen plate 20A is the same as the vertical length of the second portion 12. The first screen holes 22 extend in the vertical direction and have a circular cross-sectional shape. The inner diameter of the first screen holes 22 is the same as the outer diameter of the second portion 12. As shown in FIG. 4, the first screen holes 22 are arranged in a lattice pattern corresponding to the position and size of the second portion 12.

[0033] When forming the second portion 12 by screen printing, first, the paste-like second material 22P is supplied, for example, to the right of the first screen holes 22 on the upper surface of the first screen plate 20A.

[0034] Next, the squeegee 30 is moved from the right side of the second material 22P to the left along the top surface of the first screen plate 20A. As a result, the paste-like second material 22P extruded by the squeegee 30 is inserted and shaped sequentially from the first screen hole 22 located at the right end to the first screen hole 22 located at the left end.

[0035] After this, by removing the first screen plate 20A from the lead frame 3, a lead frame 3 is obtained in which a plurality of second portions 12, each formed into a cylindrical shape extending upward and arranged in a grid pattern, are obtained, as shown in Figures 5 and 6, with their lower ends in contact with the upper surface 3a of the lead frame 3.

[0036] The second portion 12 formed by screen printing is subjected to a semi-curing process. In the semi-curing process, the lead frame 3 on which the second portion 12 is formed is heated to 100°C in an oven, for example. By performing the semi-curing process, the second portion 12 can be prevented from being deformed when the first portion 11 is subsequently formed.

[0037] Furthermore, if the second portion 12 formed by screen printing is completely cured, when the semiconductor chip 2 is mounted on the second portion 12 in a later process, if the flatness of the top surface of the second portion 12 is low, there is a possibility that the second portion 12 will not make sufficient contact with the semiconductor chip 2 and will not be bonded properly. Therefore, the second portion 12 is semi-cured so that the top surface of the second portion 12 will conform to the semiconductor chip 2 when the semiconductor chip 2 is mounted on the second portion 12.

[0038] Next, forming the adhesive layer 10 by screen printing includes placing a second screen plate 20B on the upper surface 3a of the lead frame 3, and molding the first portion 11 using the second screen plate 20B, as shown in FIG. 7.

[0039] The second screen plate 20B has second screen holes 21 for forming the first portion 11. The thickness of the second screen plate 20B is slightly greater than the vertical length of the second portion 12. Because the thickness of the second screen plate 20B is slightly greater than the vertical length of the second portion 12, it is possible to prevent the squeegee 30 from interfering with the second portion 12 when the squeegee 30 is moved along the upper surface of the second screen plate 20B. The second screen holes 21 extend in the vertical direction and have a rectangular cross-sectional shape as shown in FIG. 8. The size of the inner peripheral surface of the second screen holes 21 is the same as the size of the outer peripheral surface of the first portion 11.

[0040] When forming the first portion 11 by screen printing, first, the paste-like first material 21P is supplied, for example, to the right of the second screen holes 21 on the upper surface of the second screen plate 20B.

[0041] Next, the squeegee 30 is moved from the right side of the first material 21P to the left along the upper surface of the second screen plate 20B. As a result, the paste-like first material 21P extruded by the squeegee 30 is inserted sequentially from the right end to the left end of the second screen holes 21 and shaped.

[0042] After this, by removing the second screen plate 20B from the lead frame 3, a lead frame 3 is obtained in which the second portion 12 is located inside and the first portion 11 formed of the first material is disposed on the upper surface 3a, as shown in Figures 9 and 10.

[0043] In the method of manufacturing the semiconductor device 1, the semiconductor chip 2 is mounted on the first portion 11 and the second portion 12 formed by screen printing by bringing the semiconductor chip 2 into contact with the first portion 11 and the second portion 12, as shown in Fig. 1. When mounting the semiconductor chip 2 on the first portion 11 and the second portion 12, it is pressed with a force of, for example, about 1N to 10N.

[0044] As shown in FIG. 9, the thickness of the second screen plate 20B is slightly greater than the length of the first portion 11, so that the thin film portion of the first portion 11 exists above the second portion 12. Here, the first portion 11 is in an uncured state, and the second portion 12 is in a semi-cured state. Therefore, when the semiconductor chip 2 is pressed against the first portion 11 and the second portion 12, the thin film portion of the first portion 11 above the second portion 12 is pushed out from above the second portion 12.

[0045] After the thin film portion of the first portion 11 is pushed out, the semiconductor chip 2 comes into contact with the upper end of the second portion 12. Because the second portion 12 is in a semi-cured state but not yet fully cured, when the semiconductor chip 2 is pressed against it, the upper end surface conforms to the semiconductor chip 2 and is bonded to it. As a result, the second portion 12 connects the semiconductor chip 2 and the lead frame 3 in a sufficiently bonded state. Therefore, heat generated in the semiconductor chip 2 is efficiently dissipated to the lead frame 3 via the second portion 12.

[0046] To fully harden the molded first portion 11 and second portion 12, the semiconductor device 1 formed by mounting the semiconductor chip 2 on the adhesive layer 10 is heated, for example, in an oven at 200 to 250° C. This completes the method for manufacturing the semiconductor device 1.

[0047] According to at least one embodiment described above, the second portion 12 is formed of a second material having a higher elastic modulus and thermal conductivity than the first material, is located inside the first portion 11, and has multiple second portions 12 that each contact and connect the semiconductor chip 2 and the lead frame 3.This allows the first portion 11 to absorb the stress caused by the difference in linear expansion coefficient between the semiconductor chip 2 and the lead frame 3 during moisture absorption, reflow, and temperature cycle tests, and prevents peeling, thereby preventing a decrease in thermal conductivity.

[0048] Furthermore, according to at least one embodiment, the multiple second portions 12 are configured to be spaced apart in a grid pattern when viewed in the direction in which the semiconductor chip 2 and the lead frame 3 are aligned, thereby enabling heat generated in the semiconductor chip 2 to be dissipated uniformly over a wide area in the semiconductor chip 2 to the lead frame 3.

[0049] Furthermore, according to at least one embodiment, each of the multiple second portions has a columnar configuration connecting the semiconductor chip 2 and the lead frame 3, thereby enabling the semiconductor chip 2 and the lead frame 3 to be connected over the shortest distance, thereby improving heat dissipation from the semiconductor chip 2 to the lead frame 3.

[0050] Furthermore, according to at least one embodiment, since each of the multiple second portions 12 has a cylindrical configuration, when the first material is applied around the multiple second portions 12 to form the first portion 11, the fluidity of the first material can be improved compared to, for example, when the cross section of the second portion 12 is a rectangular prism.

[0051] Furthermore, according to at least one embodiment, the total area of ​​the multiple second portions 12 in contact with the semiconductor chip 2 is configured to be greater than 1 / 8 and less than 1 / 4 of the area of ​​the surface of the semiconductor chip 2 facing the adhesive layer 10, thereby ensuring that the first portions 11 expand in accordance with heat dissipation from the semiconductor chip 2 to the lead frame 3 and expansion of the lead frame 3.

[0052] Furthermore, according to at least one embodiment, each of the second portions 12 contains metal particles, so that heat can be dissipated from the semiconductor chip 2 to the lead frame 3 efficiently.

[0053] Furthermore, according to at least one embodiment, forming the second portion 12 includes applying the second material onto the lead frame 3 and then semi-hardening the second material, which prevents deformation of the second portion 12 when the first portion 11 is subsequently formed, and allows the second portion 12 to connect the semiconductor chip 2 and the lead frame 3 in a sufficiently bonded state, thereby enabling heat generated in the semiconductor chip 2 to be efficiently dissipated to the lead frame 3 via the second portion 12.

[0054] Furthermore, according to at least one embodiment, the first portion 11 and the second portion 12 are each formed by screen printing, which makes it possible to easily form the first portion 11 and the second portion 12, and by using the same printing method, production efficiency can be improved.

[0055] (Second embodiment) The configuration of the semiconductor device 1 according to the second embodiment will be described below.

[0056] FIG. 11 is a plan view showing the semiconductor device 1 of the second embodiment. In this figure, the same elements as those of the semiconductor device 1 of the first embodiment shown in FIGS. 1 to 10 are denoted by the same reference numerals, and the description thereof will be omitted. The second embodiment differs from the first embodiment in the arrangement of the second portion 12.

[0057] 11, in a plan view, a plurality of rows of second portions 12 are arranged at intervals in the vertical direction, and each row is arranged at intervals in the horizontal direction. In this embodiment, the vertical positions of second portions 12 in adjacent rows in the horizontal direction are shifted by half a pitch. That is, the second portions 12 are arranged in a staggered pattern in a plan view seen in the direction in which the semiconductor chips 2 and lead frames 3 are aligned. The other configurations are the same as those of the semiconductor device 1 in the first embodiment.

[0058] According to at least one of the embodiments described above, in addition to being able to obtain the same functions and effects as the semiconductor device 1 in the first embodiment, the configuration in which the plurality of second portions 12 are arranged in a staggered pattern can reduce the maximum distance between the second portions 12. Therefore, according to the embodiment, the heat generated in the semiconductor chip 2 can be dissipated to the lead frame 3 more uniformly over a wide range in the semiconductor chip 2.

[0059] (Third embodiment) The configuration of the semiconductor device 1 according to the third embodiment will be described below.

[0060] FIG. 12 is a plan view showing the semiconductor device 1 of the third embodiment. In this figure, the same elements as those of the semiconductor device 1 of the first embodiment shown in FIGS. 1 to 10 are denoted by the same reference numerals, and the description thereof will be omitted. The third embodiment differs from the first embodiment in the configuration of the second portion 12.

[0061] As shown in FIG. 12, each of the second portions 12 has a prismatic shape with a rectangular cross section. The other configurations are the same as those of the semiconductor device 1 in the first embodiment.

[0062] According to at least one of the embodiments described above, in addition to being able to obtain the same functions and effects as the semiconductor device 1 in the first embodiment, the second portions 12 have a rectangular prism-like cross section, which allows the second portions 12 to be effectively arranged relative to the semiconductor chip 2 that is rectangular in plan view. Therefore, according to the embodiment, the heat generated in the semiconductor chip 2 can be dissipated to the lead frame 3 more uniformly over a wide range in the semiconductor chip 2.

[0063] The present embodiment includes the following additional aspects. (Appendix 1) A semiconductor chip; a substrate supporting the semiconductor chip; an adhesive layer disposed between the semiconductor chip and the substrate and adhering the semiconductor chip to the substrate; Equipped with the adhesive layer includes a first portion formed of a first material; a plurality of second portions formed of a second material having a higher elastic modulus and a higher thermal conductivity than the first material, positioned inside the first portion, each of which contacts and connects the semiconductor chip and the substrate; The semiconductor device has: (Appendix 2) the second portions are arranged in a grid pattern at intervals when viewed in a direction in which the semiconductor chip and the substrate are arranged. 2. The semiconductor device according to claim 1. (Appendix 3) Each of the plurality of second portions has a columnar shape connecting the semiconductor chip and the substrate. 10. The semiconductor device according to claim 1 or 2. (Appendix 4) Each of the plurality of second portions is cylindrical. 4. The semiconductor device according to claim 3. (Appendix 5) a total area of ​​the second portions in contact with the semiconductor chip is equal to or greater than 1 / 8 and equal to or less than 1 / 4 of an area of ​​a surface of the semiconductor chip facing the adhesive layer; 5. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device having a first insulating layer. (Appendix 6) Each of the plurality of second portions includes metal particles. 6. The semiconductor device according to claim 5. (Appendix 7) forming an adhesive layer on a substrate, the adhesive layer having a first portion made of a first material and a plurality of second portions made of a second material having a higher elastic modulus and a higher thermal conductivity than the first material; Mounting a semiconductor chip on the adhesive layer opposite to the substrate; Including, Forming the adhesive layer applying the second material to the substrate to form a plurality of the second portions in contact with the substrate; applying the first material to the substrate to form the first portion with a plurality of the second portions disposed therein and in contact with the substrate; Including, A method for manufacturing a semiconductor device, wherein mounting the semiconductor chip includes contacting the semiconductor chip with the first portion and the second portion and connecting the semiconductor chip to the substrate via the first portion and the second portion. (Appendix 8) forming the second portion includes semi-curing the second material after applying the second material to the substrate; 8. A method for manufacturing a semiconductor device according to claim 7. (Appendix 9) the second portions are arranged in a grid pattern at intervals when viewed in a direction in which the semiconductor chip and the substrate are arranged. 9. A method for manufacturing a semiconductor device according to claim 7 or 8. (Appendix 10) forming the first portion and the second portion by screen printing; 10. A method for manufacturing a semiconductor device according to any one of claims 7 to 9. (Appendix 11) The plurality of second portions are each formed into a columnar shape. 11. A method for manufacturing a semiconductor device according to any one of claims 7 to 10. (Appendix 12) The plurality of second portions are each formed into a cylindrical shape. 12. A method for manufacturing a semiconductor device according to claim 11.

[0064] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0065] 1... semiconductor device, 2... semiconductor chip, 3... lead frame (substrate), 10... adhesive layer, 11... first part, 12... second part

Claims

1. A semiconductor chip; A substrate supporting the semiconductor chip; an adhesive layer disposed between the semiconductor chip and the substrate and bonding the semiconductor chip and the substrate; Equipped with The adhesive layer includes a first portion formed of a first material; a plurality of second portions formed of a second material having a higher elastic modulus and a higher thermal conductivity than the first material, positioned inside the first portion, each of the second portions being in contact with and connecting the semiconductor chip and the substrate; The semiconductor device has

2. the second portions are arranged in a lattice pattern at intervals from one another when viewed in a direction in which the semiconductor chip and the substrate are arranged. The semiconductor device according to claim 1 .

3. Each of the second portions is a columnar portion connecting the semiconductor chip and the substrate.

3. The semiconductor device according to claim 1 or 2.

4. Each of the second portions is cylindrical. The semiconductor device according to claim 3 .

5. a total area of ​​the second portions in contact with the semiconductor chip is equal to or greater than 1 / 8 and equal to or less than 1 / 4 of an area of ​​a surface of the semiconductor chip facing the adhesive layer; 3. The semiconductor device according to claim 1 or 2.

6. Each of the second portions includes metal particles. The semiconductor device according to claim 5 .

7. forming an adhesive layer on a substrate, the adhesive layer having a first portion made of a first material and a plurality of second portions made of a second material having a higher elastic modulus and a higher thermal conductivity than the first material; mounting a semiconductor chip on the adhesive layer opposite the substrate; Including, Forming the adhesive layer comprises: applying the second material to the substrate to form a plurality of the second portions in contact with the substrate; applying the first material to the substrate to form the first portion with a plurality of the second portions disposed therein and in contact with the substrate; Including, A method for manufacturing a semiconductor device, wherein mounting the semiconductor chip includes contacting the semiconductor chip with the first portion and the second portion and connecting the semiconductor chip to the substrate via the first portion and the second portion.

8. forming the second portion includes semi-curing the second material after applying the second material to the substrate; The method for manufacturing a semiconductor device according to claim 7 .

9. the second portions are arranged in a lattice pattern spaced apart from one another when viewed in a direction in which the semiconductor chip and the substrate are arranged. The method for manufacturing a semiconductor device according to claim 7 or 8.

10. forming the first portion and the second portion by screen printing; The method for manufacturing a semiconductor device according to claim 7 or 8.

11. The second portions are each formed into a columnar shape. The method for manufacturing a semiconductor device according to claim 7 or 8.

12. The second portions are each formed into a cylindrical shape. The method for manufacturing a semiconductor device according to claim 11 .

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