Method for processing substrate and substrate processor

Abstract

To increase the degree of freedom of adjusting the distribution of the processing result in the plane of a substrate.SOLUTION: There is provided a method for processing a substrate performed by a substrate processor having a processing container into which a substrate is carried or from which it is carried out and a heating unit for heating the inside of the processing container. The method includes the steps of: (a) setting a specific interval having a temperature distribution in a substrate plane where a predetermined result of processing the substrate can be obtained, on the basis of a first prediction model for predicting the change with time of the temperature distribution in the substrate plane after heating or cooling by the heating unit; and (b) performing the substrate processing in the specific interval.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] For example, Patent Document 1 proposes controlling a heat treatment apparatus using a set temperature profile that indicates the relationship between the passage of time and the set temperature. The set temperature profile is specified so that the temperature distribution on the substrate surface during film formation includes both a central high temperature state where the vicinity of the substrate is hot, and a peripheral high temperature state where the periphery of the substrate is hot. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2002-43301 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can increase the degree of freedom in adjusting the distribution of processing results within a substrate surface. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing method performed in a substrate processing apparatus having a processing container into which a substrate is loaded and unloaded, and a heating section that heats the inside of the processing container, the method comprising: (a) setting a specific section having a temperature distribution within the substrate surface that will result in a desired substrate processing result based on a first prediction model that predicts a time change in temperature distribution within the substrate surface that changes after heating or cooling by the heating section; and (b) performing the substrate processing in the specific section. Effect of the Invention

[0006] According to one aspect, it is possible to increase the degree of freedom in adjusting the distribution of processing results within a substrate surface. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment; [Diagram 2] FIG. 1 is a diagram showing an example of temperature control during substrate processing according to the related art. [Diagram 3] FIG. 13 is a diagram showing an example of a simulation result of temperature distribution within a substrate surface after the start of temperature rise. [Figure 4] 1 is a flowchart illustrating an example of a substrate processing method according to an embodiment. [Diagram 5] FIG. 13 is a diagram showing an example of an experimental result of temperature distribution within a substrate surface after starting temperature rise according to an embodiment. [Figure 6] FIG. 13 is a diagram showing an example of an experimental result of temperature distribution within a substrate surface after starting temperature rise according to an embodiment. [Figure 7] 1 is a diagram showing an example of a film thickness distribution in a specific section and within a substrate surface according to an embodiment; [Figure 8] 1 is a diagram showing an example of a film thickness distribution in a specific section and within a substrate surface according to an embodiment; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Substrate processing equipment] With reference to FIG. 1, a configuration of a substrate processing apparatus 1 according to an embodiment capable of performing a substrate processing method described later will be described. FIG. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 according to this embodiment has a substantially cylindrical processing vessel 4 whose longitudinal direction is vertical. The processing vessel 4 has a double-tube structure including a cylindrical inner tube 6 and an outer tube 8 having a ceiling concentrically arranged outside the inner tube 6. However, the substrate processing apparatus 1 may have a single-tube structure having a single cylinder. The inner tube 6 and the outer tube 8 are formed of a heat-resistant material such as quartz. Inside the processing vessel 4, substrate processing such as film formation processing is performed on a plurality of substrates W.

[0010] The inner cylinder 6 and the outer cylinder 8 are held at their lower ends by a manifold 10 made of stainless steel or the like. The manifold 10 is fixed to, for example, a base plate (not shown). The manifold 10, together with the inner cylinder 6 and the outer cylinder 8, forms a substantially cylindrical internal space, and is therefore considered to form a part of the processing vessel 4.

[0011] That is, the processing vessel 4 comprises an inner tube 6 and an outer tube 8 formed of a heat-resistant material such as quartz, and a manifold 10 formed of stainless steel or the like, and the manifold 10 is provided on the lower part of the side of the processing vessel 4 so as to support the inner tube 6 and the outer tube 8 from below.

[0012] The manifold 10 has a gas introduction part 20 that introduces a processing gas used for substrate processing into the processing vessel 4. Although Fig. 1 shows a configuration in which one gas introduction part 20 is provided, the present invention is not limited thereto, and multiple gas introduction parts 20 may be provided depending on the type of gas used, etc.

[0013] An inlet pipe 22 for introducing a processing gas into the processing vessel 4 is connected to the gas inlet part 20. The inlet pipe 22 is provided with a flow rate regulator 24 such as a mass flow controller for adjusting the gas flow rate, a valve (not shown), and the like.

[0014] The manifold 10 also has a gas exhaust unit 30 that exhausts the inside of the processing vessel 4. The gas exhaust unit 30 is connected to an exhaust pipe 36 including a vacuum pump 32 capable of controlling the pressure reduction inside the processing vessel 4, an aperture variable valve 34, and the like.

[0015] A furnace port 40 is formed at the lower end of the manifold 10, and a disk-shaped lid 42 made of, for example, stainless steel is provided on the furnace port 40. The lid 42 is provided so as to be movable up and down by a lifting mechanism 44 that functions as a boat elevator, for example, and is configured to be able to hermetically seal the furnace port 40.

[0016] An insulation cylinder 46 made of, for example, quartz is placed on the lid 42. A wafer boat 48 made of, for example, quartz is placed on the insulation cylinder 46, and holds, for example, about 50 to 200 substrates W in a horizontal state in multiple stages at predetermined intervals. The substrates W placed on the wafer boat 48 constitute one batch, and various substrate processes are performed on a batch basis. An example of the substrate W is a wafer having a diameter of 200 mm to 300 mm. The wafer boat 48 is an example of a boat that holds multiple substrates in multiple slots arranged in multiple stages in the vertical direction and is carried in and out of the processing vessel 4.

[0017] The wafer boat 48 is loaded (carried into) the processing vessel 4 by raising the lid body 42 using the lifting mechanism 44, and substrate processing is performed on the substrates W held in the wafer boat 48. After the substrate processing is performed, the lid body 42 is lowered using the lifting mechanism 44, and the wafer boat 48 is unloaded (carried out) from the processing vessel 4 to a loading area below.

[0018] A heater 60 having, for example, a cylindrical shape, capable of controlling heating of the processing vessel 4 to a predetermined temperature is provided on the outer periphery of the processing vessel 4. The heater 60 is an example of a heating unit that heats the inside of the processing vessel 4. The heater 60 has multiple heaters 60a to 60g that adjust the temperatures of multiple substrates W accommodated inside the processing vessel 4 for multiple zones.

[0019] The heaters 60a to 60g are provided vertically from the top to the bottom. The heaters 60a to 60g are configured so that the heater output values ​​(power, heat generation amount) can be controlled independently by the power controllers 62a to 62g, respectively. Furthermore, temperature sensors 65a to 65g are provided inside the inner cylinder 6 corresponding to the heaters 60a to 60g. The temperature sensors 65a to 65g are provided vertically from the top to the bottom. For example, thermocouples and resistance temperature detectors can be used as the temperature sensors 65a to 65g. The temperature sensors 65a to 65g are also collectively referred to as temperature sensors 65.

[0020] The heaters 60a to 60g are provided for each zone corresponding to the zones when the area of ​​the wafer boat 48 in which the substrates are accommodated is divided into a plurality of zones. In the substrate processing apparatus 1, the wafer boat 48 is divided into seven zones, as an example. The seven zones are called "BTM", "CTR-1", "CTR-2", "CTR-3", "CTR-4", "CTR-5", and "TOP" from the bottom up.

[0021] The heater 60a heats multiple substrates in the "TOP" zone. The temperature sensor 65a measures the temperature of the "TOP" zone in the inner cylinder 6. Hereinafter, the temperature of each zone in the inner cylinder 6 is also simply referred to as the temperature of the zone. The heater 60b heats multiple substrates in the "CTR-5" zone. The temperature sensor 65b measures the temperature of the "CTR-5" zone. The heater 60c heats multiple substrates in the "CTR-4" zone. The temperature sensor 65c measures the temperature of the "CTR-4" zone. The heater 60d heats multiple substrates in the "CTR-3" zone. The temperature sensor 65d measures the temperature of the "CTR-3" zone. The heater 60e heats multiple substrates in the "CTR-2" zone. The temperature sensor 65e measures the temperature of the "CTR-2" zone. The heater 60f heats multiple substrates in the "CTR-1" zone. The temperature sensor 65f measures the temperature of the "CTR-1" zone. A heater 60g heats the substrates in the "BTM" zone. A temperature sensor 65g measures the temperature in the "BTM" zone.

[0022] The control device 100 controls the overall operation of the substrate processing apparatus 1. The control device 100 includes a CPU 101 and a memory 102. The CPU 101 is a computer for controlling the overall operation of the substrate processing apparatus 1.

[0023] The memory 102 stores a control program for implementing the substrate processing performed by the substrate processing apparatus 1 under the control of the control device 100, and a recipe in which a substrate processing procedure and the like are set for each step. The memory 102 also stores various programs for causing each unit of the substrate processing apparatus 1 to process the substrate according to the process conditions set in the recipe. The various programs can be stored in a storage medium and then stored in the memory 102. The storage medium may be a hard disk or a semiconductor memory, or may be a portable medium such as a CD-ROM, a DVD, or a flash memory. These programs, parameters, and various data may be appropriately transmitted to the memory 102 from another apparatus or a host computer by a communication means such as a wired or wireless communication means. The control device 100 may be a control device provided separately from the substrate processing apparatus 1. The memory 102 may be a storage device provided separately from the substrate processing apparatus 1.

[0024] Detection signals from the temperature sensors 65a-65g are transmitted to the control device 100. The control device 100 calculates setting values ​​for the power controllers 62a-62g based on the detection signals from the temperature sensors 65a-65g, and outputs the calculated setting values ​​to each of the power controllers 62a-62g. This allows the output value (Power) of each of the heaters 60a-60g to be controlled independently.

[0025] [Conventional temperature control] In a substrate processing apparatus 1 in which substrate processing is performed in batches, there is a problem that the distribution of the substrate processing result (e.g., film thickness distribution) within the substrate surface is biased due to the flow of the source gas and the fine structure on the substrate. To address this problem, a technology called TVS (Time-Varying Setpoint) has been used.

[0026] When the gas flow rate supplied into the processing vessel 4 and the pressure inside the processing vessel 4 are equal, the temperature becomes the dominant factor in determining the film formation rate. TVS utilizes the phenomenon in which a temperature difference occurs within the substrate surface while the temperature is rising or falling, and forms a film while the temperature is rising or falling in order to make the film thickness distribution within the substrate surface uniform. The term TVS also includes techniques for determining optimal temperature rise and fall conditions based on film thickness distribution measured in advance. TVS uses a statistical model that predicts the temperatures at the center and edge (periphery) of the substrate to determine the ramping rate (rate of temperature rise or fall) and film formation time that will make the film thickness uniform within the substrate surface.

[0027] FIG. 2(a) shows an example of the control temperature setting before film thickness adjustment by TVS, and the T n ~T n+1 Film formation is performed while controlling heater 60 so that the temperature remains constant as shown on the vertical axis in the range of 0 to 300 mm. Figure 2(b) shows the resulting film thickness distribution within the wafer. The film thickness distribution on the vertical axis is shown against the radial position of a wafer with a diameter of 300 mm shown on the horizontal axis. 0 on the horizontal axis indicates the center of the wafer, and 150 mm and -150 mm indicate the very edge of the wafer. The film thickness distribution within the wafer is thicker at the edge of the wafer slightly inside the very edge of the wafer, and thinner in the center.

[0028] In order to prevent the film thickness distribution in the diameter direction of the wafer from forming an M-shape due to the unevenness of the gas flow, the film thickness is adjusted using TVS technology in Fig. 2(c). n ~T n+1 In this section, the heater 60 is controlled to lower the temperature at a constant rate to perform the film formation process. As a result, the temperature at the center of the wafer remains high while the edge of the wafer cools, so that the film formation rate at the center of the wafer is higher than that at the edge, and the in-plane film thickness uniformity from the center to the edge of the wafer can be improved as shown in FIG. 2(d).

[0029] However, although the uniformity of the film thickness distribution within the wafer surface is improved, the adjustment targets only two locations: the film thickness at the center and the film thickness at the edges. Therefore, for process conditions that would result in an M-shaped film thickness distribution as shown in Figure 2(b) without using TVS technology, even if TVS technology is used, there will still be areas where the film thickness uniformity within the wafer cannot be adjusted, such as the film thickness at the edges being somewhat thicker, as shown in Figure 2(d).

[0030] That is, in the conventional TVS, film formation starts at a timing after a certain amount of time has passed since the heater 60 started to raise and lower the temperature. Therefore, the shape of the temperature distribution in the center, edge, and between the center and edge in the wafer surface becomes a similar curve regardless of the time that has passed since the start of the temperature rise and fall, and the degree of freedom for adjustment is limited to only two degrees of freedom, the slope and intercept of the straight line that approximates the curve. Therefore, the degree of freedom for adjustment of the film thickness distribution in the wafer is also limited to two degrees of freedom, and when adjusting the complex shape of the film thickness distribution to make the film thickness distribution in the wafer surface uniform, there are some parts that cannot be made uniform.

[0031] 3(a) and (b) show an example of a simulation result of temperature distribution in the substrate surface after the start of temperature rise in the processing vessel 4. With the start of temperature rise set to 0.0 seconds, FIG. 3(a) shows an example of a simulation result of temperature distribution in the radial position in the wafer surface from 0.0 seconds to 40.0 seconds (immediately after the start of temperature rise) in 5 second increments from the start of temperature rise. FIG. 3(b) shows an example of a simulation result of temperature distribution in the radial position in the wafer surface from 45.0 seconds to 95.0 seconds (some time after the start of temperature rise) in 5 second increments from the start of temperature rise. The left end of the horizontal axis in FIG. 3(a) and (b) is the wafer center, the right end is the wafer edge, and the middle is the middle in the radial direction from the wafer center to the wafer edge.

[0032] In conventional TVS, film formation starts some time after the start of the temperature rise and fall. Therefore, as shown in Figure 3(b), the temperature distribution (shape of the curve) within the wafer is similar for all the elapsed times from the start of the temperature rise (45.0 seconds to 95.0 seconds), so the degree of freedom in adjusting the film thickness distribution is low.

[0033] In contrast, as shown in FIG. 3(a), when film formation is performed in the period from 0.0 to 10.0 seconds from the start of the temperature rise, there is almost no temperature difference between the center of the wafer and the middle in the radial direction. On the other hand, when film formation is performed in the period from 15.0 to 40.0 seconds from the start of the temperature rise, a temperature difference occurs between the center of the wafer, the middle in the radial direction, and the edge of the wafer. In other words, immediately after the start of the temperature rise, there is a wide variety of temperature distributions (curve shapes) within the wafer surface, so there is a high degree of freedom in adjusting the film thickness distribution. Because heat is transferred within the wafer surface by thermal conduction, various temperature patterns appear depending on the time immediately after the start of the temperature rise and fall.

[0034] Therefore, in temperature control using conventional TVS technology, a film is formed by utilizing the section in which the in-plane temperature difference begins to stabilize, whereas in the substrate processing method according to the present embodiment, a film is formed by also utilizing the section of complex temperature distribution immediately after the start of heating and cooling.

[0035] This makes it possible to deposit a film with a thickness distribution that corresponds to a wide variety of temperature distributions, and allows adjustment of the thickness distribution with three or more degrees of freedom. In other words, it is possible to adjust the temperature control conditions, including the section immediately after the temperature is increased or decreased. This makes it possible to target and create thickness distributions that were previously impossible to achieve. This makes it possible to adjust complex in-plane distributions that were previously impossible to adjust, and improves the in-plane uniformity of the film thickness distribution.

[0036] [Prediction model] In the substrate processing method according to this embodiment, a specific section having a temperature distribution within the substrate surface that can obtain a desired substrate processing result is set based on a first prediction model that predicts a time change in temperature distribution within the substrate surface that changes after the temperature is increased or decreased by the heater 60. Then, the substrate processing is performed in the specific section after the temperature is increased or decreased by the heater 60.

[0037] The first prediction model may be defined in advance from the result of detecting the temperature in the substrate surface that has changed after the temperature is increased or decreased by the heater 60 using the temperature sensor 65. The first prediction model may be derived based on a physical model created based on an equation of physical laws that expresses a phenomenon such as a heat conduction equation. The first prediction model is a model that predicts the temperature in the substrate surface based on a temperature setting curve.

[0038] The second prediction model predicts the result of the substrate processing from the temperature distribution in the substrate surface during the substrate processing performed under predetermined process conditions. In the substrate processing method according to the present embodiment, the second prediction model is used to predict the temperature distribution in the substrate surface such that the result of the substrate processing performed under the predetermined process conditions will be a desired temperature distribution in the substrate surface.

[0039] [Substrate processing method] An example of a substrate processing method according to the present embodiment will be described with reference to Figs. 4 to 6. Fig. 4 is a flow chart showing an example of a substrate processing method according to an embodiment. Figs. 5 and 6 are diagrams showing an example of an experimental result of a temperature distribution in a substrate surface after the start of heating according to an embodiment. Fig. 4 describes a film formation process as an example of substrate processing. The substrate processing method is controlled by the control device 100 and executed by the substrate processing apparatus 1.

[0040] In step S1, the control device 100 acquires process conditions from a recipe used for a film forming process.

[0041] In step S2, the control device 100 uses the second prediction model to predict a temperature distribution within the substrate surface that will result in a desired film thickness distribution within the substrate surface as a result of performing a film formation process based on the acquired process conditions.

[0042] In step S3, the control device 100 uses the first prediction model to set a section having the temperature distribution within the substrate surface predicted in step S2 as a specific section.

[0043] In step S4, the control device 100 executes a film forming process in a specific section after starting the temperature increase or decrease control by the heater 60, and ends this process.

[0044] 5 and 6 show the change over time in the measurement results of the substrate temperature at seven measurement points provided in the diameter direction within the plane of the substrate W (see measurement points P1 to P7 on the substrate W) after the boat 48 is loaded (carried into) the processing vessel 4. The left graphs in Fig. 5 and 6 are the same graph, and a first prediction model is defined from the change over time in the measurement results of the substrate temperature at these measurement points.

[0045] Of the seven measurement points in the diameter direction of substrate W, curve E on the graph shows the change over time of the average (P1+P7) / 2 measured temperature of P1 and P7 at the substrate edges. Curve ME shows the change over time of the average (P2+P6) / 2 measured temperature of P2 and P6 in the middle (radially outer side). Curve MC shows the change over time of the average (P3+P5) / 2 measured temperature of P3 and P5 in the middle (radially inner side). Curve C shows the change over time of the measured temperature of P4 at the center of the substrate.

[0046] 5 and 6 are enlarged views of the section enclosed by the dotted line in the left graph. When the horizontal axis of the left graph in Fig. 5 and 6 indicates 0 seconds, the loading of the boat 48 into the processing vessel 4 is completed, and then the heater 60 is heated in accordance with a temperature increase instruction in a certain step of the recipe, and the temperature inside the processing vessel 4 increases.

[0047] The enlarged graph in Figure 5 shows T n ~T n+1 When the section is set to a specific section in step S3, the temperature difference in the substrate surface does not change significantly when using the TVS technique, which starts film formation from a timing some time after the start of temperature rise. This means that the degree of freedom in adjusting the film thickness distribution is low, and it is not possible to adjust with a high degree of freedom, such as increasing the film thickness only at the ends, increasing the film thickness only at the middle, or amplifying only the center.

[0048] In the case of the temperature distribution in Figure 5, the temperature of curve C is the highest, followed by curve MC, curve ME, and curve E, in that order. Therefore, the film thickness distribution can be adjusted so that the film thickness is thickest at the center and becomes thinner in the order of the middle (inner), middle (outer), and ends.

[0049] On the other hand, the temperature immediately after the start of the temperature rise, which is enclosed by the dotted line in Fig. 6, is shown in the enlarged graph of Fig. 6 when the temperature is switched from rising to falling. n ~T n+1 When the section is set to a specific section in step S3, the temperature difference in the substrate surface changes significantly as it progresses. This allows a high degree of freedom in adjusting the film thickness distribution, and allows for adjustment with a high degree of freedom such as increasing the film thickness only at the ends, increasing the film thickness only at the middle, or amplifying the film thickness only at the center.

[0050] For example, T in Figure 6 n ~T n+1 In this section, the temperature in the middle (curves ME, MC) is higher than that of the central curve C and the end curve E, so the film thickness distribution can be adjusted so that the middle is thick and the center and end curves are thin. Also, by setting the section where the end curve E is high as a specific section and performing film formation processing in that specific section, it is possible to increase the film thickness only at the end.

[0051] As described above, a specific section is set based on the first prediction model so that a temperature distribution within the substrate surface will result in a desired film thickness distribution within the substrate surface as a result of performing a film formation process based on process conditions. Then, a film formation process is performed in the specific section.

[0052] By setting a specific section from the time period after the temperature is increased or decreased by the heater 60 and before the temperature difference in the substrate surface becomes stable, the degree of freedom in adjusting the film thickness distribution can be increased.

[0053] [Simulation results of film thickness distribution adjustment] The results of a simulation of film thickness distribution adjustment will be described with reference to Fig. 7 and Fig. 8. Fig. 7 and Fig. 8 are diagrams showing an example of a film thickness distribution in a specific section and within a substrate surface according to an embodiment.

[0054] (Simulation 1) In the example shown in FIG. 7(a), the temperature difference in the substrate surface stabilizes after a while (for example, several tens of seconds) from the start of temperature increase control by the heater 60. n ~T n+1 According to this, the film formation process is performed in the section T n ~T n+1 In this method, the controlled temperatures are highest at the edge, followed by the middle and finally the center of the substrate. As a result, as shown in Figure 7(b), the film becomes thicker at the edge and thinner at the center, resulting in a concave film thickness distribution. If the film thickness distribution becomes convex (mountain-shaped) when the controlled temperature during film formation is kept constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control.

[0055] (Simulation 2) In the example shown in FIG. 7C, the temperature increase control by the heater 60 is started and then the temperature is changed from increase to decrease. n ~T n+1 According to this, the film formation process is performed in the section T n ~T n+1 In this case, the controlled temperature is higher in the middle of the substrate than at the edges and center. As a result, as shown in FIG. 7(d), the middle becomes a thick film and the edges and center become thin, resulting in an M-shaped film thickness distribution. If the film thickness distribution becomes W-shaped when the controlled temperature during film formation is kept constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control. Note that in order to increase the film thickness, the section T n ~T n+1 It is necessary to make the temperature distribution such that the above temperature distribution pattern appears repeatedly.

[0056] The temperature control shown in Fig. 7(a) is performed using the TVS technology. The temperature control shown in Fig. 7(c) is performed using the substrate processing method according to this embodiment. According to the substrate processing method according to this embodiment, a complex film formation distribution such as an M-shape can be created by performing a film formation process using a temperature distribution at the timing of switching between heating and cooling. Although the substrate processing method according to this embodiment has been described as not including the TVS technology, the substrate processing method according to this embodiment includes temperature control using the TVS technology, and temperature control may be performed in combination with TVS.

[0057] (Simulation 3) In the example shown in FIG. 8(a-1), the temperature difference in the substrate surface stabilizes after a while (e.g., several tens of seconds) from the start of temperature reduction control by the heater 60 and then during a specific period T n ~T n+1 According to this, the film formation process is performed in the section T n ~T n+1 In this method, the controlled temperature is highest at the center, followed by the middle and end of the substrate. As a result, as shown in Figure 8(a-2), the film becomes thicker at the center and thinner at the end, resulting in a convex film thickness distribution. If the film thickness distribution becomes concave when the controlled temperature during film formation is kept constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control.

[0058] The temperature control in Fig. 8(c-1) is the same as that in Fig. 7(a), and the film thickness distribution in Fig. 8(c-2) is the same as that in Fig. 7(b). The film thickness distribution in Fig. 8(a-2) is the inverse of the film thickness distribution in Fig. 8(c-2).

[0059] (Simulation 4) In the example shown in FIG. 8(b-1), the timing immediately after the start of the temperature reduction control by the heater 60 is set as a specific section T n ~T n+1 and the interval T n ~T n+1 According to this, the film formation process is performed in the section T n ~T n+1In this case, the controlled temperatures are highest at the center, middle, and end of the substrate in that order. Also, the temperature difference between the center, middle, and end of the substrate is not constant, with the end having the fastest rate of temperature drop and the center having the slowest rate of temperature drop. As a result, as shown in Figure 8(b-2), the center is thick and the ends are thin, resulting in a U-shaped film thickness distribution. If the film thickness distribution becomes inverted U-shaped when the controlled temperature during film formation is kept constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control. Note that in order to increase the film thickness, it is necessary to perform the temperature control within the section T n ~T n+1 It is necessary to make the temperature distribution such that the above temperature distribution pattern appears repeatedly.

[0060] (Simulation 5) In the example shown in FIG. 8(d-1), the timing immediately after the start of the temperature increase control by the heater 60 is set as a specific section T n ~T n+1 and the interval T n ~T n+1 According to this, the film formation process is performed in the section T n ~T n+1 In this case, the controlled temperatures are highest at the edge, middle, and center of the substrate in that order. Also, the temperature difference between the edge, middle, and center of the substrate is not constant, with the edge having the fastest heating rate and the center having the slowest heating rate. This results in an inverted U-shaped film thickness distribution, with the film being thicker at the edge and thinner at the center, as shown in Figure 8(d-2). If the film thickness distribution becomes U-shaped when the controlled temperature during film formation is kept constant, the uniformity of the film thickness distribution within the substrate surface can be improved by carrying out this temperature control. Note that in order to increase the film thickness, it is necessary to perform the temperature control within the section T n ~T n+1 It is necessary to make the temperature distribution such that the above temperature distribution pattern appears repeatedly.

[0061] [Zone Control] In the substrate processing apparatus 1, there are cases where the film thickness distribution differs for each zone. Therefore, the temperature control in the substrate processing method according to the present embodiment can be performed for each zone. In this case, the first prediction model predicts, for each zone, the time change in the temperature distribution in the substrate surface that changes after the temperature is increased or decreased by the heater 60 when the multiple slots of the boat 48 are divided into several zones. Based on the first prediction model, the control device 100 may set a specific section having a temperature distribution in the substrate surface that can obtain a desired substrate processing result for each zone.

[0062] As described above, the substrate processing method and substrate processing apparatus according to the present embodiment can increase the degree of freedom in adjusting the distribution of processing results within the substrate surface.

[0063] According to the present substrate processing method, the temperature distribution of the substrate immediately after the substrate temperature is lowered or raised is set to a specific section, and the film formation process is performed in the specific section. This allows a complex film thickness distribution such as a U-shape or W-shape, which could not be adjusted by the conventional TVS technology, to be made closer to a uniform distribution, and the in-plane uniformity of the substrate processing such as the film formation process can be improved. For example, depending on the process conditions, the film thickness distribution in the diameter direction may be a convex, concave, W-shape, M-shape, etc. In contrast, according to the substrate processing method of the present embodiment, the film thickness distribution can be made closer to a uniform distribution by performing film formation having a film thickness distribution in a direction that cancels these film thickness distributions.

[0064] For example, process conditions for substrate processing are acquired, and film formation processing is performed under the acquired process conditions. In this case, the result of the substrate processing performed under the acquired process conditions is predicted based on a second prediction model that predicts the result of the substrate processing from the temperature distribution in the substrate surface during the substrate processing performed under the specified process conditions. Then, a temperature distribution in the substrate surface that cancels the predicted result of the substrate processing is predicted. Next, a section having the predicted temperature distribution in the substrate surface based on the first prediction model is set as a specific section, and substrate processing is performed in the specific section based on the process conditions. In this way, film formation is performed with a film thickness distribution in a direction that cancels the film thickness distribution when the control temperature during normal film formation is kept constant, and the film thickness distribution can be made closer to a uniform distribution.

[0065] This makes it possible to form a film with a film thickness distribution that corresponds to the temperature distribution in a specific section, enabling adjustment of the film thickness distribution with three or more degrees of freedom. Note that, in order to determine the ramping rate (rate of temperature increase / decrease) and the section to be used for film formation, it is necessary to be able to predict the temperature distribution within the substrate surface immediately after the start of temperature increase / decrease using a first prediction model such as a simulation model, calculation formula, or experimental model.

[0066] The substrate processing method and substrate processing apparatus according to the presently disclosed embodiments should be considered as illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without contradiction, and can be combined without contradiction.

[0067] In the above embodiment, the substrate processing apparatus according to the present embodiment is a batch-type film forming apparatus that processes a plurality of substrates at once, but the present disclosure is not limited thereto. The substrate processing apparatus according to the present embodiment may be a single-wafer film forming apparatus that processes wafers one by one. The substrate processing apparatus may be a semi-batch-type film forming apparatus that revolves a plurality of wafers arranged on a turntable in a processing vessel by the turntable, and processes the wafers by passing them in order through an area where a first gas is supplied and an area where a second gas is supplied. The substrate processing apparatus may be a multiple-wafer film forming apparatus equipped with a plurality of mounting tables in one processing vessel. [Explanation of symbols]

[0068] 1. Substrate Processing Equipment 4 Processing vessel 48 Wafer Boat 60a~60g heater 65a~65g Temperature Sensor 100 Control device

Claims

1. a processing vessel into which substrates are loaded and unloaded; a heating unit that heats the inside of the processing vessel; A substrate processing method performed in a substrate processing apparatus having a (a) setting a specific section having a temperature distribution within the substrate surface that can obtain a desired result of the substrate processing based on a first prediction model that predicts a time change in a temperature distribution within the substrate surface that changes after a temperature increase or decrease caused by the heating unit; (b) performing the substrate processing in the specific section; A method for processing a substrate.

2. The substrate processing apparatus includes: a boat for holding a plurality of the substrates in a plurality of slots arranged in multiple stages in a vertical direction and for carrying the substrates into and out of the processing vessel; (a) sets the specific section having a temperature distribution within the substrate surface that can obtain a desired substrate processing result for each zone based on the first prediction model that predicts a time change in temperature distribution within the substrate surface for each zone that changes after a temperature increase or decrease by the heating unit when the plurality of slots are divided into several zones. The method of claim 1 .

3. (c) acquiring process conditions for performing the substrate processing; (d) predicting a result of the substrate processing performed under the acquired process conditions based on a second prediction model that predicts a result of the substrate processing from a temperature distribution in a substrate surface during the substrate processing performed under the predetermined process conditions, and predicting a temperature distribution in the substrate surface that cancels out the predicted result of the substrate processing; (a) sets a section having the predicted temperature distribution in the substrate surface based on the first prediction model as the specific section; (b) performing the substrate processing based on the process conditions in the specific section; The method of claim 1 .

4. The step (a) sets the specific section included in a time period after the heating unit heats up or cools down the temperature and before a temperature difference between the center of the substrate surface, the middle portion in the radial direction, and the end portion becomes stable. The substrate processing method according to any one of claims 1 to 3.

5. The substrate processing apparatus includes: A plurality of temperature sensors are provided in a diameter direction of the substrate, The first prediction model is is defined in advance based on a result of detecting a temperature change in the substrate surface after a temperature increase or decrease caused by the heating unit by a plurality of temperature sensors installed. The substrate processing method according to any one of claims 1 to 3.

6. the substrate processing is a film forming process, (a) sets the specific section based on the first prediction model so that a temperature distribution within a substrate surface will result in a desired film thickness distribution within the substrate surface as a result of performing the film formation process based on process conditions for performing the substrate processing; (b) performing the film formation process in the specific section after the temperature is increased or decreased by the heating unit; The substrate processing method according to claim 3 .

7. The first prediction model is is defined in advance based on a result of detecting a temperature change in the substrate surface in each zone after the temperature is increased or decreased by the heating unit using a plurality of temperature sensors installed in each zone. The substrate processing method according to claim 2 .

8. a processing vessel into which substrates are loaded and unloaded; a heating unit that heats the inside of the processing vessel; A control device; A substrate processing apparatus comprising: The control device includes: (a) setting a specific section having a temperature distribution within the substrate surface that can obtain a desired result of the substrate processing based on a first prediction model that predicts a time change in a temperature distribution within the substrate surface that changes after a temperature increase or decrease caused by the heating unit; (b) performing the substrate processing in the specific section; The substrate processing apparatus is controlled as follows.

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