Heat source holding mechanism for use in semiconductor processing apparatus, heat source holding method, and semiconductor processing apparatus

Abstract

To provide a heat source holding mechanism for use in a semiconductor processing apparatus that is capable of preventing deterioration of a seal, a heat source holding method, and a semiconductor processing apparatus.SOLUTION: In a heat source holding mechanism to be used in a semiconductor processing apparatus 10, a heat source 22 is supported by a support portion via an airtight member 36, and a radiant heat blocking portion for blocking radiant heat is located at a contact site of the heat source 22 with the airtight member 36. For example, by applying a metal film X1 as a radiant heat blocking portion on an outer surface of a second heater portion 23B of a quartz heater 22H, heating energy generated by the first heater portion 23A of the quartz heater 22H is blocked by the metal film X1, and is not thermally conducted to the airtight member 36.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present invention relates to a heat source holding mechanism and a heat source holding method used in a semiconductor processing apparatus, and a semiconductor processing apparatus equipped with these. [Background technology]

[0002] Conventional semiconductor processing equipment performs a heat treatment process on silicon substrates, in which the silicon substrate is heated to 300 to 1200 degrees Celsius, and annealing, oxidation, impurity diffusion, and other processes are repeated several tens of times.

[0003] Here, the heat treatment process may involve a batch processing apparatus that heat-treats a plurality of silicon substrates (eg, about 25 to 200 substrates) at once, or a single wafer processing apparatus that heat-treats 1 to 4 silicon substrates at once.

[0004] As the single wafer processing apparatus, an RTP (Rapid Thermal Processor) apparatus, which uses a quartz tube heater filled with and supplemented with argon gas or halogen gas to rapidly heat the silicon substrate, and an annealing apparatus are used.

[0005] Typical heat sources used in the heat treatment process are a so-called single-ended heater and a so-called double-ended heater in which a power source is introduced from both ends of a rod-shaped quartz tube having a heating element in the form of a single wire or coil of tungsten wire arranged continuously inside the quartz tube.

[0006] Here, for example, in the case of a heater with a double-end structure, a circular and annular shape is preferable from the viewpoint of uniform heating, since the silicon substrate is a disk. An O-ring made of an elastomer material (e.g., bind rubber or fluororubber) is used as a method for holding the heater in an airtight state in the heat treatment chamber. The O-ring holds the heater, thereby maintaining an airtight state inside the heat treatment chamber. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2006-78019 A Summary of the Invention [Problem to be solved by the invention]

[0008] However, heat is transmitted optically through the inside of the heater's quartz tube. Since the amount of heat used inside the heat treatment chamber is quite large, the O-ring in contact with the heater can be heated by direct radiation and can become molten or carbonized. This can cause the O-ring to deteriorate and not function properly, leading to heat leakage due to seal deterioration, as well as problems such as the heater losing its holding power and falling off.

[0009] In view of the above, the present invention provides a heat source holding mechanism, a heat source holding method, and a semiconductor processing apparatus that can prevent deterioration of the seal. [Means for solving the problem]

[0010] A first invention is a heat source holding mechanism used in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, and a radiant heat blocking part that blocks radiant heat is located at the contact part of the heat source with the airtight member.

[0011] The radiant heat blocking portion may be a metal film, and the metal film may be interposed at a contact portion between the heat source and the airtight member.

[0012] The radiant heat blocking portion may be an optical filter film, and the optical filter film may be interposed at a contact portion between the heat source and the airtight member.

[0013] The radiant heat blocking portion may be made of opaque quartz, and a portion of the heat source that comes into contact with the airtight member may be made of the opaque quartz.

[0014] It is preferable that an end of the heat source is folded to form a non-heat generating portion, and the radiant heat blocking portion is provided on the non-heat generating portion.

[0015] The airtight member may be, for example, an O-ring.

[0016] The O-ring may be constructed of an elastomeric material.

[0017] A second aspect of the present invention is a semiconductor processing apparatus including the above heat source holding mechanism.

[0018] A third invention is a heat source holding method used in semiconductor processing equipment, in which a heat source is supported by a support part via an airtight member, and a metal film that blocks radiant heat is applied to the contact portion of the heat source with the airtight member.

[0019] A fourth invention is a heat source holding method used in semiconductor processing equipment, in which a heat source is supported by a support part via an airtight member, and an optical filter film that blocks radiant heat is applied to the contact portion of the heat source with the airtight member.

[0020] A fifth invention is a heat source holding method used in semiconductor processing equipment, in which a heat source is supported by a support part via an airtight member, the heat source being composed of transparent quartz and opaque quartz, and the transparent quartz and the opaque quartz being connected so that the opaque quartz is located at the contact part of the heat source with the airtight member. Effect of the Invention

[0021] According to the present invention, deterioration of the seal of a heat source holding mechanism used in a semiconductor processing apparatus can be prevented. [Brief description of the drawings]

[0022] [Figure 1] 1 is a vertical cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a vertical cross-sectional view of a lid constituting the semiconductor processing apparatus according to the embodiment of the present invention. FIG. [Diagram 3] 1 is a plan view of a quartz heater that is a heat source used in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 4] 1 is a plan view of a configuration in which a plurality of quartz heaters, which are heat sources used in a semiconductor processing apparatus according to an embodiment of the present invention, are arranged in a ring shape. [Diagram 5] 1 is an enlarged vertical cross-sectional view showing a heat source holding mechanism in which a quartz heater used in a semiconductor processing apparatus according to an embodiment of the present invention is attached to a lid portion. [Figure 6] 1 is a vertical cross-sectional view showing the thermal propagation of heating energy generated by a quartz heater used in a semiconductor processing apparatus. [Figure 7] FIG. 11 is a vertical cross-sectional view of a configuration in which a metal film is applied to a part of a quartz heater of a heat source holding mechanism according to an embodiment of the present invention. [Figure 8] FIG. 11 is a vertical cross-sectional view of a configuration in which a portion of a quartz heater of a heat source holding mechanism according to an embodiment of the present invention is made of opaque quartz. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] A heat source holding mechanism, a heat source holding method, and a semiconductor processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

[0024] [Overall configuration of semiconductor processing equipment] As shown in FIG. 1, the semiconductor processing apparatus 10 is an apparatus for accommodating a silicon substrate (e.g., also called a semiconductor wafer or silicon wafer; not shown) in a space 12 formed inside the apparatus and for heating the silicon substrate to perform heat treatment. The semiconductor processing apparatus 10 is composed of a base 14 on which the silicon substrate is placed, a lid 16 that covers the base 14 from above, and a peripheral wall 18 that surrounds the periphery of the base 14 and the lid 16. The space 12 surrounded by the base 14, the lid 16, and the peripheral wall 18 becomes an airtight space that can isolate the silicon substrate from the atmosphere during heat treatment. In other words, the semiconductor processing apparatus 10 is also called a heat treatment chamber.

[0025] As shown in Fig. 2, the lid 16 has a lid body 20 and a heating source 22 disposed on the inner surface side of the lid body 20. The heating source 22 is made of a light-transmitting material, such as a halogen heater, and specifically, a quartz heater is used. As long as the material is light-transmitting, it may be made of quartz, glass-based or sapphire ceramic material, acrylic resin, plastic resin, magnesium fluoride, calcium fluoride, or other crystalline material. In the following, the heating source 22 will be described using a quartz heater 22H as an example. In this case, the semiconductor processing apparatus 10 is referred to as a halogen heater container.

[0026] As shown in FIGS. 3 and 4, since the silicon substrate is formed in a disk shape in a plan view, the quartz heater 22H is preferably formed in a circular and annular shape in a plan view.

[0027] Here, the quartz heater 22H has gaps 24 that are partially discontinuous along the circumferential direction in a plan view. These gaps 24 are non-light-emitting portions 24N. For example, in the quartz heater shown in FIG. 4, four non-light-emitting portions 24N are formed along the circumference, but the number is not limited to four.

[0028] Here, the quartz heater 22H is a plurality of circular and annular quartz heaters with different diameters arranged along the radial direction. In the quartz heater 22H of this arrangement, a plurality of non-light emitting portions 24N are present on a straight line along the radial direction, and a light emitting portion 25B (see FIG. 4) of the quartz heater 22H is interposed between the non-light emitting portions 24N adjacent to each other along the radial direction. The light emitting portion 25B refers to the portion where the quartz tube of the quartz heater 22H is present.

[0029] 1, a reflection treatment plate 26 is provided on the inner surface side of the lid body 20. The reflection treatment plate 26 reflects the radiant heat emitted from the quartz heater 22H, preventing the heat from being transferred to the inside of the lid body 20. This makes it possible to prevent thermal damage to the lid body 20 due to fixed conduction heat. It is not limited to the reflection treatment plate 26, and a reflection treatment film may be applied to the inner surface of the lid body 20.

[0030] A coolant flow path 28 for flowing a coolant is formed inside the lid body 20. By circulating the coolant through the coolant flow path 28, the entire lid 16 is cooled.

[0031] [Heating source holding mechanism] Next, a heat source holding mechanism used in the semiconductor processing apparatus will be described.

[0032] 1 and 2, the quartz heater 22H is held by the lid 16. The lid 16 is formed with a mounting flange 30 extending in the vertical direction (gravity direction). Therefore, the lid 16 is formed with a recess 32 surrounded by the inner surface of the lid 16 and the mounting flange 30. The quartz heater 22H is located in this recess 32. The reflection treatment plate 26 is provided from the inner surface of the lid 16 to the mounting flange 30, and reflects radiant heat.

[0033] 5, the quartz heater 22H is composed of a first heater part 23A extending in the horizontal direction, and a second heater part 23B connected to the first heater part 23A and extending in the vertical direction (gravity direction). A through hole 34 penetrating in the thickness direction is formed in the lid body 20, and the second heater part 23B of the quartz heater 22H is inserted into the through hole 34. Note that, for example, the second heater part 23B is formed by bending the first heater part 23A vertically, but the two may be formed of separate members and connected to each other.

[0034] 3 and 4, the circumferentially adjacent quartz heaters 22H are discontinuous at the second heater portion 23B, forming a non-light emitting portion 24N. Also, the separation distance between the first heater portions 23A of the circumferentially adjacent quartz heaters 22H can be set to the minimum distance T (see FIG. 5), minimizing the non-light emitting portion 24N and preventing the semiconductor processing apparatus 10 from becoming large.

[0035] The second heater portion 23B of the quartz heater 22H is formed, for example, as a non-heat generating portion.

[0036] As shown in Fig. 5, an airtight member 36 is disposed on the inner peripheral surface of a through hole 34 penetrating the lid body 20 in the thickness direction. The airtight member 36 holds the quartz heater 22H by pressing against the second heater portion 23B of the quartz heater 22H. The airtight member 36 is, for example, an elastic member and is constituted by an O-ring. The O-ring is made of an elastomer material. For example, a bind rubber or a fluororubber is used as the elastomer material.

[0037] A compression ring 38 for pressing against the airtight member 36 and a retaining flange 40 for fixing the compression ring 38 to the lid main body 20 are provided on the inner peripheral surface of the through hole 34. In this way, the airtight member 36 is fixed to the inner peripheral surface of the through hole 34.

[0038] A current introduction part 42 that connects to the second heater part 23B of the quartz heater 22H protrudes from the upper side (atmosphere side) of the lid part 16. When a voltage is applied to the current introduction part 42, the first heater part 23A of the quartz heater 22H generates heat, and the silicon substrate is heated. Since the current introduction part 42 is exposed to the atmosphere side, there is no heat transfer to the current introduction part 42, and no technical problems due to heat generation occur.

[0039] [Radiative heat blocking treatment for heat source holding mechanism] Next, a radiant heat blocking process for the heat source holding mechanism used in the semiconductor processing apparatus 10 will be described.

[0040] As shown in FIG. 7, a radiant heat blocking part for blocking radiant heat is provided near the quartz heater 22H, that is, at a position on the optical path where the light from the quartz heater 22H can be irradiated to the airtight member 36. For example, a radiant heat blocking part for blocking radiant heat is provided at the outer surface of the quartz heater 22H, which is in contact with the airtight member 36. In other words, a metal film (metal reflective film) X1 is applied to the outer surface of the second heater part 23B of the quartz heater 22H as a radiant heat blocking part. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have high thermal reflectivity and are difficult to absorb heat, or is made of a mixture of any material. The metal film X1 reflects the radiant heat from the first heater part 23A of the quartz heater 22H, and can prevent the heat from being transferred to the inside of the second heater part 23B. Therefore, the second heater part 23B maintains its function as a non-heat generating part.

[0041] As an alternative to the configuration in which the metal film (metal reflective film) X1 is applied to the outer surface of the second heater portion 23B of the quartz heater 22H, for example, the metal film X1 can be formed of a separate member and then covered or wound around the outer surface of the second heater portion 23B of the quartz heater 22H.

[0042] In another embodiment, an optical film (optical filter film, infrared filter film, not shown) is applied to the outer surface of the second heater section 23B of the quartz heater 22H as a radiant heat blocking section. The optical film reflects the radiant heat from the quartz heater 22H and prevents the heat from being transferred to the inside of the second heater section 23B. Therefore, the second heater section 23B maintains its function as a non-heat generating section. For example, the optical film may be made of frosted glass, a material that causes diffuse reflection in quartz, or a metal that is foamed to scatter light or has a different refractive index to prevent light from passing through.

[0043] In addition, instead of applying an infrared filter film (optical filter film) to the surface of the second heater part 23B of the quartz heater 22H, for example, it is also possible to form an infrared filter film using a separate material and cover or wrap the surface of the second heater part 23B of the quartz heater 22H.

[0044] As another embodiment, as shown in Fig. 8, the material of the second heater section 23B of the quartz heater 22H may be made of opaque quartz X2, the material of the first heater section 23A may be made of transparent quartz, and the end of the opaque quartz X2 and the end of the transparent quartz may be fused and connected. Although the connection part between the end of the opaque quartz X2 and the end of the transparent quartz becomes transparent quartz, a radiant heat blocking part can be formed in the second heater section 23B. This allows the second heater section 23B to maintain its function as a non-heat generating part.

[0045] In addition, instead of constructing the second heater portion 23B of the quartz heater 22H from opaque quartz X2, it is also possible to, for example, make a radiant heat reflecting member made of opaque quartz X2 as a separate member and cover or wrap the outer surface of the second heater portion 23B of the quartz heater 22H with the radiant heat reflecting member.

[0046] Next, the operation of this embodiment will be described.

[0047] 5 to 8, in a configuration in which the second heater part 23B of the quartz heater 22H is inserted into the through hole 34 of the lid body 20 and the airtight member 36 is in contact with and holds the second heater part 23B, the heating energy (see the arrow in FIG. 6) generated in the first heater part 23A of the quartz heater 22H is thermally propagated toward the second heater part 23B, and the temperature of the second heater part 23B becomes high. At this time, the heating energy is also thermally propagated to the airtight member 36 in contact with the second heater part 23B, and the temperature of the airtight member 36 becomes high.

[0048] In detail, in general, thermal energy can be applied to quartz in the range of visible light 400 nm to infrared light 2700 nm, but it has the property of penetrating in the radiation direction (pipe cross-sectional direction) of the quartz tube centered on the heat source, as well as in the axial direction of the quartz tube. Therefore, in a configuration in which the quartz heater 22H is supported vertically (gravity direction) by the airtight member 36, the airtight member 36 is affected by the heat of visible light to infrared light transmitted through the wall of the quartz tube. For this reason, the heating energy is also transmitted to the airtight member 36 in contact with the second heater part 23B, causing it to become hot, and if this temperature reaches or exceeds the heat resistance temperature of the airtight member 36, the airtight member 36 will melt or burn.

[0049] For these reasons, the airtight member 36 becomes abnormally hot during heat treatment in the semiconductor processing apparatus 10, causing melting or carbonization of the airtight member 36 and further elastic deterioration. As a result, a gap may be formed between the quartz heater 22H and the through hole 34 of the lid body 20, causing a technical problem of heat escaping to the outside through the gap. If heat leaks to the outside, the heat treatment of the silicon substrate becomes insufficient, causing defects. Furthermore, if the airtight member 36 melts, the holding force for holding the quartz heater 22H weakens, and there is a risk of the quartz heater 22H falling off.

[0050] Therefore, in this embodiment, as shown in Fig. 7, a metal film (metal reflective film) X1 is applied to the outer surface of the second heater part 23B of the quartz heater 22H as a radiation heat blocking part. Therefore, the heating energy generated in the first heater part 23A of the quartz heater 22H is blocked by the metal film X1, and the heat is not conducted to the second heater part 23B. This makes it possible to prevent the temperature of the second heater part 23B from becoming too high. As a result, it is possible to prevent the temperature of the airtight member 36 in contact with the second heater part 23B from becoming too high, and deterioration of the airtight member 36 can be prevented.

[0051] Since deterioration of the airtight member 36 can be prevented, it is possible to ensure the holding force of the second heater portion 23B by the airtight member 36. Therefore, it is possible to prevent heat leakage to the outside and the quartz heater 22H from falling off.

[0052] The same effect can be obtained by applying an infrared filter film (optical filter film) as a radiant heat blocking section to the outer surface of the second heater section 23B of the quartz heater 22H using a metal or dielectric material.

[0053] As shown in FIG. 8, the same effect can be obtained even if the material of the second heater portion 23B of the quartz heater 22H is made of opaque quartz X2.

[0054] The above embodiment is merely an example of the technical concept of the present invention. The present invention is not limited to this embodiment, but includes all aspects that utilize the technical concept of the present invention. [Explanation of symbols]

[0055] 10. Semiconductor processing equipment 12 Space 14 Base 16 Lid part (support part) 18 Peripheral wall section 20 Lid body 22 Heating source 22H Quartz heater 23A 1st heater section 23B Second heater section 24 Cavity 24N Non-light-emitting part 25B Light emitting part 26 Reflective treatment plate 28 Coolant flow path 30 Mounting flange 32 Recess 34 Through hole 36 Airtight materials 38 Compression Ring 40 Retaining flange 42 Current introduction part X1 Metal film X2 Opaque quartz

Claims

1. A heat source holding mechanism for use in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, comprising: The heat source is made of a light-transmitting material, The heat source holding mechanism has a radiant heat blocking portion that blocks radiant heat, the radiant heat blocking portion being positioned on a light path along which the light irradiates the airtight member.

2. The heat source holding mechanism according to claim 1 , wherein the radiant heat blocking portion is provided at a portion of the heat source that comes into contact with the airtight member.

3. The heat source holding mechanism according to claim 1 , wherein the radiant heat blocking portion is a metal film that blocks light.

4. The heat source holding mechanism according to claim 1 , wherein the radiant heat blocking portion is an optical film that blocks light.

5. The heat source holding mechanism according to claim 1 or 2, wherein the radiant heat blocking portion is made of opaque quartz.

6. An end of the heat source is bent to form a non-heating portion, The heat source holding mechanism according to claim 1 or 2, wherein the non-heat generating portion is provided with the radiant heat blocking portion.

7. The heat source holding mechanism according to claim 1 , wherein the airtight member is an O-ring.

8. The heat source retention mechanism of claim 7 , wherein the O-ring is constructed from an elastomeric material.

9. A semiconductor processing apparatus comprising the heat source holding mechanism according to claim 1 or 2.

10. A heat source holding method for use in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, comprising: The heat source is made of a light-transmitting material, A heat source holding method, comprising: forming a light-blocking metal film by coating the light-blocking metal film on an optical path through which light can be irradiated onto the airtight member.

11. A heat source holding method for use in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, comprising: The heat source is made of a light-transmitting material, A heat source holding method, comprising the steps of: forming, by coating, an optical film that blocks light on an optical path through which light can be irradiated onto the airtight member.

12. A heat source holding method for use in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, comprising: The heat source is made of a light-transmitting material, The heat source is composed of transparent quartz and opaque quartz, A method for holding a heat source, wherein the transparent quartz and the opaque quartz are connected so that the opaque quartz is positioned on an optical path through which light can be irradiated onto the airtight member.

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