Heating source holding mechanism used in semiconductor processing apparatus, heating source holding method and semiconductor processing apparatus

Abstract

To provide a heating source holding mechanism, a heating source holding method, and a semiconductor processing apparatus used in a semiconductor processing apparatus that can prevent deterioration in the quality of heat treatment.SOLUTION: In a heating source holding mechanism used in a semiconductor processing apparatus 10, in which the heating source 22 is supported by a support 16 via an airtight member 36, the heating source 22 has a continuous annulus 52 formed as a continuous annulus in plan view and a vertically fixed portion 54 connected to the continuous annulus 52 and extending in vertical direction, and the vertically fixed portion 54 is held by the airtight member 36 to prevent uneven heating on the silicon substrate.SELECTED DRAWING: Figure 12

Description

[Technical field]

[0001] The present invention relates to a heat source holding mechanism and a heat source holding method used in a semiconductor processing apparatus, and a semiconductor processing apparatus equipped with these. [Background technology]

[0002] Conventional semiconductor processing equipment performs a heat treatment process on silicon substrates, in which the silicon substrate is heated to 300 to 1200 degrees Celsius, and annealing, oxidation, impurity diffusion, and other processes are repeated several tens of times.

[0003] Here, the heat treatment process may involve a batch processing apparatus that heat-treats a plurality of silicon substrates (eg, about 25 to 200 substrates) at once, or a single wafer processing apparatus that heat-treats 1 to 4 silicon substrates at once.

[0004] As the single wafer processing apparatus, an RTP (Rapid Thermal Processor) apparatus, which uses a quartz tube heater filled with and supplemented with argon gas or halogen gas to rapidly heat the silicon substrate, and an annealing apparatus are used.

[0005] Typical heat sources used in the heat treatment process are a so-called single-ended heater and a so-called double-ended heater in which a power source is introduced from both ends of a rod-shaped quartz tube having a heating element in the form of a single wire or coil of tungsten wire arranged continuously inside the quartz tube.

[0006] Here, for example, in the case of a heater with a double-end structure, a circular and annular shape is preferable from the viewpoint of uniform heating, since the silicon substrate is a disk. An O-ring made of an elastomer material (e.g., bind rubber or fluororubber) is used as a method for holding the heater in an airtight state in the heat treatment chamber. The O-ring holds the heater, thereby maintaining an airtight state inside the heat treatment chamber. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2006-78019 A Summary of the Invention [Problem to be solved by the invention]

[0008] However, in conventional semiconductor processing equipment, uneven heating occurs on the silicon substrate during heat treatment, which reduces the quality of the heat treatment.

[0009] In view of the above circumstances, the present invention provides a heat source holding mechanism, a heat source holding method, and a semiconductor processing apparatus that are used in a semiconductor processing apparatus and that are capable of preventing deterioration in the quality of heat treatment. [Means for solving the problem]

[0010] The first invention is a heat source holding mechanism used in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, the heat source having a continuous annular part formed in a continuous ring shape in a planar view, and a vertical fixing part connected to the continuous annular part and extending in the vertical direction, the vertical fixing part being held by the airtight member.

[0011] The heat source may be a quartz heater that is configured with a quartz tube and a tungsten wire housed inside the quartz tube.

[0012] The airtight member is preferably an O-ring.

[0013] A second aspect of the present invention is a semiconductor processing apparatus including the above heat source holding mechanism.

[0014] A third invention is a heat source holding method used in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, the heat source having a continuous annular part formed in a continuous ring shape when viewed in a plane, and a vertical fixing part connected to the continuous annular part and extending in the vertical direction, the heat source holding method being such that the vertical fixing part is held by the airtight member.

[0015] The heat source may be a quartz heater that is configured with a quartz tube and a tungsten wire housed inside the quartz tube.

[0016] The airtight member preferably uses an O-ring. Effect of the Invention

[0017] According to the present invention, deterioration of the seal of a heat source holding mechanism used in a semiconductor processing apparatus can be prevented. [Brief description of the drawings]

[0018] [Figure 1] 1 is a vertical cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a vertical cross-sectional view of a lid constituting the semiconductor processing apparatus according to the embodiment of the present invention. FIG. [Diagram 3] 1 is a plan view of a quartz heater that is a heat source used in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 4] 1 is a plan view of a configuration in which a plurality of quartz heaters, which are heat sources used in a semiconductor processing apparatus according to an embodiment of the present invention, are arranged in a ring shape. [Diagram 5] 1 is an enlarged vertical cross-sectional view showing a heat source holding mechanism in which a quartz heater used in a semiconductor processing apparatus according to an embodiment of the present invention is attached to a lid portion. [Figure 6] 1 is a vertical cross-sectional view showing the thermal propagation of heating energy generated by a quartz heater used in a semiconductor processing apparatus. [Figure 7] FIG. 11 is a vertical cross-sectional view of a configuration in which a metal film is applied to a part of a quartz heater of a heat source holding mechanism according to an embodiment of the present invention. [Figure 8] FIG. 11 is a vertical cross-sectional view of a configuration in which a portion of a quartz heater of a heat source holding mechanism according to an embodiment of the present invention is made of opaque quartz. [Figure 9] FIG. 11 is a vertical cross-sectional view showing a holding mechanism for a continuous annular quartz heater of a heat source holding mechanism according to a modified example of the present invention. [Figure 10] FIG. 13 is a plan view of one continuous annular quartz heater that constitutes a heat source holding mechanism according to a modified example of the present invention. [Figure 11] FIG. 13 is a plan view of a configuration in which a plurality of continuous annular quartz heaters concentrically arranged constitute a heat source holding mechanism according to a modified example of the present invention. [Figure 12] FIG. 13 is an exploded view of a continuous annular quartz heater of a heat source holding mechanism according to a modified example of the present invention. [Figure 13] 13 is a photograph showing the state where a tungsten wire constituting a continuous annular quartz heater of a heat source holding mechanism according to a modified example of the present invention is cut. [Figure 14] 13 is a photograph showing a state in which a tungsten wire constituting a continuous annular quartz heater of a heat source holding mechanism according to a modified example of the present invention passes through a vertical fixing part and extends to the outside. [Figure 15] 13 is an explanatory diagram of a sealing method applied to a continuous annular quartz heater of a heat source holding mechanism according to a modified example of the present invention. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] A heat source holding mechanism, a heat source holding method, and a semiconductor processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

[0020] [Overall configuration of semiconductor processing equipment] As shown in Fig. 1, the semiconductor processing apparatus 10 is an apparatus for accommodating a silicon substrate (e.g., a semiconductor wafer or a silicon wafer) in a space 12 formed inside the apparatus and for heating the silicon substrate to perform a heat treatment. The semiconductor processing apparatus 10 is composed of a base 14 on which the silicon substrate is placed, a lid 16 that covers the base 14 from above, and a peripheral wall 18 that surrounds the base 14 and the lid 16. The space 12 surrounded by the base 14, the lid 16, and the peripheral wall 18 becomes an airtight space that can isolate the silicon substrate from the atmosphere during heat treatment. In other words, the semiconductor processing apparatus 10 is also called a heat treatment chamber.

[0021] As shown in FIG. 2, the lid 16 has a lid body 20 and a heating source 22 disposed on the inner surface side of the lid body 20. The heating source 22 is made of a light-transmitting material, such as a halogen heater, and specifically, a quartz heater is used. As long as the material is light-transmitting, it may be made of quartz, glass, sapphire ceramic material, acrylic resin, plastic resin, magnesium fluoride, calcium fluoride, or other crystalline material. The heating source 22 is made of a halogen heater, and specifically, a quartz heater is used. Hereinafter, the heating source 22 will be described using a quartz heater 22H. In this case, the semiconductor processing apparatus 10 is referred to as a halogen heater container.

[0022] As shown in FIGS. 3 and 4, since the silicon substrate is formed in a disk shape in a plan view, the quartz heater 22H is preferably formed in a circular and annular shape in a plan view.

[0023] Here, the quartz heater 22H has gaps 24 that are partially discontinuous along the circumferential direction in a plan view. These gaps 24 are non-light-emitting portions 24N. For example, in the quartz heater shown in FIG. 4, four non-light-emitting portions 24N are formed along the circumference, but the number is not limited to four.

[0024] Here, the quartz heater 22H is a plurality of circular and annular quartz heaters with different diameters arranged along the radial direction. In the quartz heater 22H of this arrangement, a plurality of non-light emitting portions 24N are present on a straight line along the radial direction, and a light emitting portion 25B (see FIG. 4) of the quartz heater 22H is interposed between the non-light emitting portions 24N adjacent to each other along the radial direction. The light emitting portion 25B refers to the portion where the quartz tube of the quartz heater 22H is present.

[0025] 1, a reflection treatment plate 26 is provided on the inner surface side of the lid body 20. The reflection treatment plate 26 reflects the radiant heat emitted from the quartz heater 22H, preventing the heat from being transferred to the inside of the lid body 20. This makes it possible to prevent thermal damage to the lid body 20 due to fixed conduction heat. It is not limited to the reflection treatment plate 26, and a reflection treatment film may be applied to the inner surface of the lid body 20.

[0026] A coolant flow path 28 for flowing a coolant is formed inside the lid body 20. By circulating the coolant through the coolant flow path 28, the entire lid 16 is cooled.

[0027] [Heating source holding mechanism] Next, a heat source holding mechanism used in the semiconductor processing apparatus will be described.

[0028] 1 and 2, the quartz heater 22H is held by the lid 16. The lid 16 is formed with a mounting flange 30 extending in the vertical direction (gravity direction). Therefore, the lid 16 is formed with a recess 32 surrounded by the inner surface of the lid 16 and the mounting flange 30. The quartz heater 22H is located in this recess 32. The reflection treatment plate 26 is provided from the inner surface of the lid 16 to the mounting flange 30, and reflects radiant heat.

[0029] 5, the quartz heater 22H is composed of a first heater part 23A extending in the horizontal direction, and a second heater part 23B connected to the first heater part 23A and extending in the vertical direction (gravity direction). A through hole 34 penetrating in the thickness direction is formed in the lid body 20, and the second heater part 23B of the quartz heater 22H is inserted into the through hole 34. Note that, for example, the second heater part 23B is formed by bending the first heater part 23A vertically, but the two may be formed of separate members and connected to each other.

[0030] 3 and 4, the circumferentially adjacent quartz heaters 22H are discontinuous at the second heater portion 23B, forming a non-light emitting portion 24N. Also, the separation distance between the first heater portions 23A of the circumferentially adjacent quartz heaters 22H can be set to the minimum distance T (see FIG. 5), minimizing the non-light emitting portion 24N and preventing the semiconductor processing apparatus 10 from becoming large.

[0031] The second heater portion 23B of the quartz heater 22H is formed, for example, as a non-heat generating portion.

[0032] As shown in Fig. 5, an airtight member 36 is disposed on the inner peripheral surface of a through hole 34 penetrating the lid body 20 in the thickness direction. The airtight member 36 holds the quartz heater 22H by pressing against the second heater portion 23B of the quartz heater 22H. The airtight member 36 is, for example, an elastic member and is constituted by an O-ring. The O-ring is made of an elastomer material. For example, a bind rubber or a fluororubber is used as the elastomer material.

[0033] A compression ring 38 for pressing against the airtight member 36 and a retaining flange 40 for fixing the compression ring 38 to the lid main body 20 are provided on the inner circumferential surface of the through hole 34. In this way, the airtight member 36 is fixed to the inner circumferential surface of the through hole 34.

[0034] A current introduction part 42 that connects to the second heater part 23B of the quartz heater 22H protrudes from the upper side (atmosphere side) of the lid part 16. When a voltage is applied to the current introduction part 42, the first heater part 23A of the quartz heater 22H generates heat, and the silicon substrate is heated. Since the current introduction part 42 is exposed to the atmosphere side, there is no heat transfer to the current introduction part 42, and no technical problems due to heat generation occur.

[0035] [Radiative heat blocking treatment for heat source holding mechanism] Next, a radiant heat blocking process for the heat source holding mechanism used in the semiconductor processing apparatus 10 will be described.

[0036] As shown in FIG. 7, a radiant heat blocking part for blocking radiant heat is provided near the quartz heater 22H, that is, at a position on the optical path where the light from the quartz heater 22H can be irradiated to the airtight member 36. For example, a radiant heat blocking part for blocking radiant heat is provided at the outer surface of the quartz heater 22H, which is in contact with the airtight member 36. In other words, a metal film (metal reflective film) X1 is applied to the outer surface of the second heater part 23B of the quartz heater 22H as a radiant heat blocking part. The metal film X1 is made of aluminum, aluminum alloy, silver, gold, nickel, etc., which have high thermal reflectivity and are difficult to absorb heat, or is made of a mixture of any material. The metal film X1 reflects the radiant heat from the first heater part 23A of the quartz heater 22H, and can prevent the heat from being transferred to the inside of the second heater part 23B. Therefore, the second heater part 23B maintains its function as a non-heat generating part.

[0037] As an alternative to the configuration in which the metal film (metal reflective film) X1 is applied to the outer surface of the second heater portion 23B of the quartz heater 22H, for example, the metal film X1 can be formed of a separate member and then covered or wound around the outer surface of the second heater portion 23B of the quartz heater 22H.

[0038] In another embodiment, an optical film (optical filter film, infrared filter film, not shown) is applied to the outer surface of the second heater section 23B of the quartz heater 22H as a radiant heat blocking section. The optical film reflects the radiant heat from the quartz heater 22H and prevents the heat from being transferred to the inside of the second heater section 23B. Therefore, the second heater section 23B maintains its function as a non-heat generating section. For example, the optical film may be made of frosted glass, a material that causes diffuse reflection in quartz, or a metal that is foamed to scatter light or has a different refractive index to prevent light from passing through.

[0039] In addition, instead of applying an infrared filter film (optical filter film) to the surface of the second heater part 23B of the quartz heater 22H, for example, it is also possible to form an infrared filter film using a separate material and cover or wrap the surface of the second heater part 23B of the quartz heater 22H.

[0040] As another embodiment, as shown in Fig. 8, the material of the second heater section 23B of the quartz heater 22H may be made of opaque quartz X2, the material of the first heater section 23A may be made of transparent quartz, and the end of the opaque quartz X2 and the end of the transparent quartz may be fused and connected. Although the connection part between the end of the opaque quartz X2 and the end of the transparent quartz becomes transparent quartz, a radiant heat blocking part can be formed in the second heater section 23B. This allows the second heater section 23B to maintain its function as a non-heat generating part.

[0041] In addition, instead of constructing the second heater portion 23B of the quartz heater 22H from opaque quartz X2, it is also possible to, for example, make a radiant heat reflecting member made of opaque quartz X2 as a separate member and cover or wrap the outer surface of the second heater portion 23B of the quartz heater 22H with the radiant heat reflecting member.

[0042] Next, the operation of this embodiment will be described.

[0043] 5 to 8, in a configuration in which the second heater part 23B of the quartz heater 22H is inserted into the through hole 34 of the lid body 20 and the airtight member 36 is in contact with and holds the second heater part 23B, the heating energy (see the arrow in FIG. 6) generated in the first heater part 23A of the quartz heater 22H is thermally propagated toward the second heater part 23B, and the temperature of the second heater part 23B becomes high. At this time, the heating energy is also thermally propagated to the airtight member 36 in contact with the second heater part 23B, and the temperature of the airtight member 36 becomes high.

[0044] In detail, in general, thermal energy can be applied to quartz in the range of visible light 400 nm to infrared light 2700 nm, but it has the property of penetrating in the radiation direction (pipe cross-sectional direction) of the quartz tube centered on the heat source, as well as in the axial direction of the quartz tube. Therefore, in a configuration in which the quartz heater 22H is supported vertically (gravity direction) by the airtight member 36, the airtight member 36 is affected by the heat of visible light to infrared light transmitted through the wall of the quartz tube. For this reason, the heating energy is also transmitted to the airtight member 36 in contact with the second heater part 23B, causing it to become hot, and if this temperature reaches or exceeds the heat resistance temperature of the airtight member 36, the airtight member 36 will melt or burn.

[0045] For these reasons, the airtight member 36 becomes abnormally hot during heat treatment in the semiconductor processing apparatus 10, causing melting or carbonization of the airtight member 36 and further elastic deterioration. As a result, a gap may be formed between the quartz heater 22H and the through hole 34 of the lid body 20, causing a technical problem of heat escaping to the outside through the gap. If heat leaks to the outside, the heat treatment of the silicon substrate becomes insufficient, causing defects. Furthermore, if the airtight member 36 melts, the holding force for holding the quartz heater 22H weakens, and there is a risk of the quartz heater 22H falling off.

[0046] Therefore, in this embodiment, as shown in Fig. 7, a metal film (metal reflective film) X1 is applied to the outer surface of the second heater part 23B of the quartz heater 22H as a radiation heat blocking part. Therefore, the heating energy generated in the first heater part 23A of the quartz heater 22H is blocked by the metal film X1, and the heat is not conducted to the second heater part 23B. This makes it possible to prevent the temperature of the second heater part 23B from becoming too high. As a result, it is possible to prevent the temperature of the airtight member 36 in contact with the second heater part 23B from becoming too high, and deterioration of the airtight member 36 can be prevented.

[0047] Since deterioration of the airtight member 36 can be prevented, it is possible to ensure the holding force of the second heater portion 23B by the airtight member 36. Therefore, it is possible to prevent heat leakage to the outside and the quartz heater 22H from falling off.

[0048] The same effect can be obtained by applying an infrared filter film (optical filter film) made of metal or dielectric material to the outer surface of the second heater portion 23B of the quartz heater 22H as a radiant heat blocking portion.

[0049] As shown in FIG. 8, the same effect can be obtained even if the material of the second heater portion 23B of the quartz heater 22H is made of opaque quartz X2.

[0050] [Improvement invention] Next, an improved invention of a heat source holding mechanism, a heat source holding method, and a semiconductor processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. Note that the same components as those in the above embodiment are given the same reference numerals, and the description will be omitted.

[0051] [Technical problems of the above embodiment] According to the above embodiment, the non-light emitting portion 24N is formed in the quartz heater 22H, but there is a technical problem that the temperature locally drops in the non-light emitting portion 24N, and the heat treatment temperature locally drops in the portion of the silicon substrate where the non-light emitting portion 24N projects (non-uniform heating). In addition, there is a technical problem that it is difficult to manufacture a quartz heater with a ring structure (difficulty in manufacturing a heat source).

[0052] Therefore, in the improved invention, the quartz heater 22H, which is the heat source 22, is formed into a complete ring structure without forming a non-light-emitting portion. Therefore, in the modified example, the continuous ring-shaped quartz heater 50 is completed, and no non-heat-generating portion is formed.

[0053] As shown in Figures 9 to 11, the continuous annular quartz heater 50 of the improved invention is composed of a continuous annular portion 52 extending horizontally and a vertical fixed portion 54 connected to the continuous annular portion 52 and extending vertically (in the direction of gravity).

[0054] In plan view, the heat source 22 is configured with a plurality of continuous annular portions 52 of different diameters arranged on concentric circles. Therefore, there are no non-light-emitting portions in the circumferential direction of the continuous annular quartz heater 50, and the quartz tubes of the continuous annular portions 52 are continuously connected.

[0055] The vertical fixing part 54 is provided with a radiant heat blocking part for blocking radiant heat, as in the above embodiment. In other words, a metal film (metal reflective film) X1 (not shown in Figs. 9 to 11) is applied to the outer surface of the vertical fixing part 54 as a radiant heat blocking part. In another embodiment, an infrared filter film (optical filter film, not shown) is applied to the outer surface of the vertical fixing part 54 as a radiant heat blocking part. Furthermore, the material of the vertical fixing part 54 may be made of opaque quartz X2 (not shown in Figs. 9 to 11), the material of the continuous annular part 52 may be made of transparent quartz, and the end of the opaque quartz X2 and the end of the transparent quartz may be fused and connected. This can prevent deterioration of the seal of the airtight member 36 that contacts and elastically supports the vertical fixing part 54.

[0056] As in the above embodiment, a through hole 34 is formed in the lid body 20 penetrating in the thickness direction, and the vertical fixing part 54 of the continuous annular quartz heater 50 is inserted into the through hole 34. The manufacturing method of the continuous annular quartz heater 50 will be described later.

[0057] The other configurations are similar to those of the above embodiment.

[0058] As described above, according to the improved invention of this embodiment, the continuous annular quartz heater 50 generates light emission in a continuous annular structure, and no non-heat-generating portion is formed in the continuous annular quartz heater 50, so that uneven heating on the silicon substrate during heat treatment can be prevented. The silicon substrate is formed in a disk shape in a plan view, and the continuous annular quartz heater 50 is also formed in a disk shape in a plan view, so that the surface of the silicon substrate can be heated uniformly and uneven heating on the silicon substrate can be eliminated. This makes it possible to suppress the occurrence of defects during heat treatment of the silicon substrate.

[0059] In addition, since uneven heating is eliminated during heat treatment of the silicon substrate, there is no need to rotate the silicon substrate and no need to use a substrate rotation mechanism, which reduces the number of parts, realizes size reduction and cost reduction, and does not require high-precision rotation control of the substrate rotation mechanism.

[0060] [How to make a continuous circular quartz heater] Next, a method for producing the continuous annular quartz heater 50 will be described.

[0061] 12, in order to fabricate a continuous annular quartz heater 50 having no non-heat generating portion, a quartz part 56 and a tungsten wire 58 are prepared. The quartz part 56 is composed of two bisected semi-annular quartz tubes 56A, two T-shaped quartz tubes 56B, and four quartz tube supports 56C for supporting various quartz tubes.

[0062] As shown in FIGS. 13 and 14, a T-shaped quartz tube 56B is connected to a semicircular quartz tube 56A, and a tungsten wire 58 is passed through the inside to form a filament.

[0063] Specifically, as shown in Fig. 15, a tungsten wire 58, which is a heater, is cut to a length and resistance value within ±5% for a heat density of 6-10 W / mm, and inserted into a semi-annular quartz tube 56A. Next, after inserting the tungsten wire 58 into the semi-annular quartz tubes 56A, the semi-annular quartz tubes 56A are connected together by flame processing, and annealed at about 1000 degrees to remove processing distortion.

[0064] The tip of the T-shaped quartz tube 56B is sealed. The sealing is performed by flame processing the tip of the T-shaped quartz tube 56B. As a result, a sealing portion is formed at the tip of the T-shaped quartz tube 56B, and since the sealing portion remains equal to or smaller than the diameter of the quartz tube, it can be inserted into the through hole 34 formed in the lid body 20. In this manner, the continuous annular quartz heater 50 is held in the lid 16.

[0065] The above embodiment is merely an example of the technical concept of the present invention. The present invention is not limited to this embodiment, but includes all aspects that utilize the technical concept of the present invention. [Explanation of symbols]

[0066] 10. Semiconductor processing equipment 12 Space 14 Base 16 Lid part (support part) 18 Peripheral wall section 20 Lid body 22 Heating source 22H Quartz heater 23A 1st heater section 23B Second heater section 24 Cavity 24N Non-light-emitting part 25B Light emitting part 26 Reflective treatment plate 28 Coolant flow path 30 Mounting flange 32 Recess 34 Through hole 36 Airtight materials 38 Compression Ring 40 Retaining flange 42 Current introduction section 50 Continuous Annular Quartz Heater 52 Continuous annular section 54 Vertical fixing part 56 Quartz parts 56A Semicircular Quartz Tube 56B T type quartz tube 56C Quartz tube support part 58 Tungsten Wire X1 Metal film X2 Opaque quartz

Claims

1. A heat source holding mechanism for use in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, comprising: The heat source has a continuous annular portion formed in a continuous annular shape in a plan view, and a vertical fixing portion connected to the continuous annular portion and extending in a vertical direction, A heat source holding mechanism, wherein the vertical fixing portion is held by the airtight member.

2. 2. The heat source holding mechanism according to claim 1, wherein the heat source is a quartz heater including a quartz tube and a tungsten wire housed inside the quartz tube.

3. The heat source holding mechanism according to claim 1 , wherein the airtight member is an O-ring.

4. A semiconductor processing apparatus comprising the heat source holding mechanism according to claim 1 or 2.

5. A semiconductor processing apparatus comprising the heat source holding mechanism according to claim 3.

6. A heat source holding method for use in a semiconductor processing apparatus, in which a heat source is supported by a support part via an airtight member, comprising: The heat source has a continuous annular portion formed in a continuous annular shape in a plan view, and a vertical fixing portion connected to the continuous annular portion and extending in a vertical direction, A method for holding a heat source, wherein the vertical fixing portion is held by the airtight member.

7. 7. The method for holding a heat source according to claim 6, wherein the heat source uses a quartz heater constituted by a quartz tube and a tungsten wire housed inside the quartz tube.

8. 8. The method for holding a heat source according to claim 6, wherein the airtight member is an O-ring.

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