Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of efficiently performing dry lithography processing.SOLUTION: A substrate processing apparatus according to an embodiment includes a dry lithography apparatus configured to perform lithography processing on a substrate mainly by gas, and a connection unit configured to connect an exposure machine configured to expose the substrate to light and the dry lithography apparatus, The connection unit is adjacent to an exposure space of the exposure machine and includes a transport space for transporting the substrate between the exposure machine and the dry lithography apparatus.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus including a cassette station for loading and unloading substrates, a processing section for performing various processes on the substrates in an atmospheric pressure environment, a transport unit, an interface device, and an EUV exposure machine. The transport unit is configured to transfer the substrate between the processing section and the interface device. The EUV exposure machine is configured to perform an exposure process using an EUV light source on a substrate placed in a vacuum chamber that is depressurized to a vacuum. The interface device includes a load lock chamber that switches between a vacuum state and an atmospheric state, and is configured to transfer the substrate between the transport unit and the EUV exposure machine. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-123732 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure describes a substrate processing apparatus and a substrate processing method that are capable of efficiently performing dry lithography processing. [Means for solving the problem]

[0005] An example of a substrate processing apparatus includes a dry lithography apparatus configured to perform lithography processing on a substrate mainly by gas, and a connection unit configured to connect an exposure machine configured to expose the substrate to light and the dry lithography apparatus, The connection unit is adjacent to an exposure space of the exposure machine and includes a transport space for transporting the substrate between the exposure machine and the dry lithography apparatus. Effect of the Invention

[0006] According to the substrate processing apparatus and substrate processing method of the present disclosure, dry lithography processing can be efficiently performed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a side view that diagrammatically illustrates an example (first example) of a substrate processing system. [Diagram 2] FIG. 2 is a top view diagrammatically illustrating the substrate processing system of FIG. [Diagram 3] FIG. 3 is a top view diagrammatically illustrating another example (second example) of the substrate processing system. [Figure 4] FIG. 4 is a top view diagrammatically illustrating another example (third example) of the substrate processing system. [Diagram 5] FIG. 5 is a top view diagrammatically illustrating another example (fourth example) of the substrate processing system. [Figure 6] FIG. 6(a) is a side view diagrammatically illustrating another example (a fifth example) of the substrate processing system, and FIG. 6(b) is a side view diagrammatically illustrating another example (a sixth example) of the substrate processing system. [Figure 7] FIG. 7(a) is a side view diagrammatically illustrating another example (seventh example) of the substrate processing system, and FIG. 7(b) is a side view diagrammatically illustrating another example (eighth example) of the substrate processing system. [Figure 8] FIG. 8 is a top view diagrammatically illustrating another example (ninth example) of the substrate processing system. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the following description, the same elements or elements having the same functions are designated by the same reference numerals, and duplicated descriptions will be omitted. In this specification, when referring to the top, bottom, right, and left of the figure, the directions of the reference numerals in the figure are used as the reference.

[0009] [Substrate processing system configuration] First, with reference to Figures 1 and 2, a substrate processing system 1 (substrate processing apparatus) configured to process a substrate W will be described. The substrate processing system 1 includes a loading / unloading station 10, a dry lithography apparatus 20, an exposure machine 30, a connection station 40 (connection unit), pressure adjustment units P1 to P3, and a controller Ctr (control unit). The loading / unloading station 10, the dry lithography apparatus 20, the connection station 40, and the exposure machine 30 may be aligned in a line in the horizontal direction in this order, for example.

[0010] The substrate W may be disk-shaped or may be a plate-shaped other than a circle, such as a polygon. The substrate W may have a cutout portion cut out of a portion. The cutout portion may be, for example, a notch (a U-shaped, V-shaped, or other groove) or a linear portion extending linearly (so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or any other type of substrate. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0011] The loading / unloading station 10 includes a mounting table 11 configured to be able to mount at least one carrier (not shown). The carrier is configured to be able to accommodate at least one substrate W in a sealed state. The carrier includes an opening / closing door for inserting and removing the substrate W. A load lock chamber (not shown) may be arranged on the mounting table 11.

[0012] The load lock chamber is configured so that the internal pressure can be adjusted between atmospheric pressure and a pressure lower than atmospheric pressure. When the substrate W is transported from the carrier to the dry lithography apparatus 3, the substrate W may be placed in the load lock chamber from the carrier, the pressure in the load lock chamber may be reduced, and then the substrate W may be transferred from the load lock chamber to the dry lithography apparatus 20. When the substrate W is transported from the dry lithography apparatus 20 to the carrier, the substrate W may be placed in the load lock chamber from the dry lithography apparatus 20, the pressure in the load lock chamber may be returned to atmospheric pressure, and then the substrate W may be transferred from the load lock chamber to the carrier.

[0013] The pressure in the load-lock chamber may be adjusted by controlling the operation of an exhaust pump (not shown) connected to the load-lock chamber and the opening and closing of a gas inlet valve (not shown) by the controller Ctr. The transfer of the substrate W between the carrier, the load-lock chamber, and the dry lithography apparatus 20 may be performed by controlling the operation of a transport arm (not shown) provided on the mounting table 2a by the controller Ctr.

[0014] The dry lithography apparatus 20 is configured to perform lithography processing on the substrate W mainly by gas. Therefore, the pressure inside the dry lithography apparatus 20 is set to a reduced pressure state lower than atmospheric pressure. Here, in this specification, the lithography processing by the dry lithography apparatus 20 includes various processes (excluding the exposure processing of the photoreactive thin film) for patterning the surface of the substrate W, such as a process for forming a photoreactive thin film on the surface of the substrate W, a development process of the photoreactive thin film after exposure, a heat treatment on the substrate W, and an etching process on the substrate W. The photoreactive thin film includes, for example, a metal-containing thin film, a resist film, etc. that are highly absorbent to EUV. The gas used in the processing of the substrate W in the dry lithography apparatus 20 may be a gas containing an organic solvent, or may be a gas containing an acid. Note that in the lithography processing of the substrate W in the dry lithography apparatus 20, a liquid such as a processing liquid may be partially used.

[0015] The dry lithography apparatus 20 includes transport units 21 and 22 and a plurality of lithography chambers U, as illustrated in detail in FIG.

[0016] The transport unit 21 extends horizontally in a first direction (left-right direction in FIG. 2) in which the loading / unloading station 10, the dry lithography apparatus 20, the exposure machine 30, and the connection station 40 are aligned. The transport unit 21 incorporates a transport arm A1. The transport arm A1 is configured to be capable of horizontal movement in a first direction, up-down movement in a vertical direction, rotation around a vertical axis, and forward / backward movement based on a control signal from a controller Ctr. The transport arm A1 is configured to transfer a substrate W between the load lock chamber, the lithography chamber U, and the transport unit 22.

[0017] The transport unit 22 extends horizontally in a second direction (the width direction of the dry lithography apparatus 20, the up-down direction in FIG. 2) intersecting the first direction. The transport unit 22 incorporates a transport arm A2. The transport arm A2 is configured to be capable of horizontal movement in the second direction, up-down movement in the vertical direction, pivoting around a vertical axis, and forward / backward movement based on a control signal from the controller Ctr. The transport arm A2 is configured to transfer the substrate W between the transport unit 22 and a connection station 40 (pressure adjustment chambers 41, 42 described below).

[0018] The multiple lithography chambers U are arranged in a row along a first direction (left-right direction in FIG. 1) on each side of the transport unit 21. Although not shown, the multiple lithography chambers U may be arranged in a row along the first direction (left-right direction in FIG. 1) on one side of the transport unit 21. The lithography chambers U are configured to perform a predetermined lithography process on the substrate W (for example, a process of forming a photoreactive thin film on the surface of the substrate W, a development process of the photoreactive thin film after exposure, a heat treatment on the substrate W, an etching process on the substrate W, etc.).

[0019] The exposure machine 30 is configured to perform an exposure process (e.g., pattern exposure) in an internal exposure space S1 on a photoreactive thin film formed on the surface of the substrate W in the dry lithography apparatus 20. The exposure machine 30 may be configured to selectively irradiate an exposure target portion of the photoreactive thin film with EUV light (wavelength: 13.5 nm), for example.

[0020] The connection station 40 is configured to connect the dry lithography apparatus 20 and the exposure machine 30. The connection station 40 is adjacent to the dry lithography apparatus 20 and the exposure machine 30, as illustrated in Figures 1 and 2. The connection station 40 does not have to be adjacent to the dry lithography apparatus 20. In other words, another device or the like may be interposed between the connection station 40 and the dry lithography apparatus 20.

[0021] The connection station 40 includes pressure adjustment chambers 41 and 42 and a transfer chamber 43, as exemplified in FIG. 2. The connection station 40 may include a plurality of pressure adjustment chambers 41 and a plurality of pressure adjustment chambers 42, as exemplified in FIG. 1. The plurality of pressure adjustment chambers 41 may be stacked in the vertical direction or may be arranged in the horizontal direction. The plurality of pressure adjustment chambers 42 may be stacked in the vertical direction or may be arranged in the horizontal direction. As exemplified in FIG. 1, the pressure adjustment chambers 41 and 42 have an internal space in which one substrate W can be placed, and may be sufficiently small in size compared to the connection station 40.

[0022] The pressure adjustment chamber 41 is connected to the internal space of the dry lithography apparatus 20 via a gate valve V1. The pressure adjustment chamber 41 is connected to the internal space of the transfer chamber 43 via a gate valve V2. The pressure adjustment chamber 42 is connected to the internal space of the dry lithography apparatus 20 via a gate valve V3. The pressure adjustment chamber 42 is connected to the internal space of the transfer chamber 43 via a gate valve V4.

[0023] The transfer chamber 43 is connected to the exposure space S1 of the exposure machine 30 via a gate valve V5. The transfer chamber 43 incorporates a transfer arm A3. The transfer arm A3 is configured to be capable of moving up and down in the vertical direction, rotating around a vertical axis, and moving forward and backward based on a control signal from the controller Ctr. The transfer arm A3 is configured to transfer the substrate W between the pressure adjustment chambers 41, 42 and the exposure machine 30.

[0024] The gate valves V1 to V5 are configured to open and close based on a control signal from the controller Ctr. With the gate valves V1 and V3 open, the controller Ctr controls the transport arms A2 and A3 to load and unload the substrate W between the pressure adjustment chamber 41 and the dry lithography apparatus 20. With the gate valve V5 open, the controller Ctr controls the transport arm A3 to load and unload the substrate W between the transport chamber 43 and the exposure space S1 of the exposure machine 30. That is, the inside of the pressure adjustment chambers 41 and 42 and the transport chamber 43 constitutes a transport space S2 in which the substrate W is transported between the dry lithography apparatus 20 and the exposure machine 30. In the example of FIG. 2, the transport space S2 is adjacent to the internal space of the dry lithography apparatus 20 and adjacent to the exposure space S1 of the exposure machine 30.

[0025] The pressure adjustment units P1 to P3 are configured to adjust the pressure of the internal space at the respective connection destinations. Each of the pressure adjustment units P1 to P3 may include an exhaust pump (not shown) and a gas inlet valve (not shown). The exhaust pump may be, for example, a turbo molecular pump. The operation of the exhaust pump and the opening and closing of the gas inlet valve may be controlled by a controller Ctr.

[0026] The pressure adjusting unit P1 is connected to the dry lithography apparatus 20. The pressure adjusting unit P1 adjusts the pressure in the lithography chamber U to 1×10 -5 Pa~1×10 -3The pressure adjustment unit P1 may reduce the pressure inside the transfer units 21 and 22 to a vacuum of about 1 Pa to 100 Pa (within the range of "medium vacuum" defined in JIS Z 8261-1:1999).

[0027] The pressure adjusting unit P2 is connected to the exposure machine 30. The pressure adjusting unit P2 adjusts the pressure in the exposure space S1 of the exposure machine 30 to 1×10 -8 Pa~1×10 -5 The pressure may be reduced to a vacuum of about Pa (within the range of "ultra-high vacuum" defined in JIS Z 8261-1:1999).

[0028] The pressure adjustment unit P3 (decompression unit) is connected to the pressure adjustment chambers 41, 42 and the transfer chamber 43. The pressure adjustment unit P3 may adjust the pressure in the pressure adjustment chambers 41, 42 and the transfer space S2 of the transfer chamber 43 between a pressure approximately equal to the pressure in the transfer units 21, 22 and a pressure approximately equal to the pressure in the exposure space S1 (i.e., medium vacuum to ultra-high vacuum). The pressure adjustment unit P3 may reduce the pressure in the transfer space S2 when the substrate W is transferred through the transfer space S2, or may constantly reduce the pressure in the transfer space S2 while the substrate processing system 1 is operating.

[0029] In this manner, the pressure adjustment units P1 to P3 operate to maintain the insides of the dry lithography apparatus 20, the exposure unit 30, and the connection station 40 in a reduced pressure state (vacuum state). Therefore, during the transfer of the substrate W between the dry lithography apparatus 20 and the exposure unit 30 through the transfer space S2 of the connection station 40, the pressure inside the transfer space S2 is reduced to a pressure lower than atmospheric pressure by the pressure adjustment unit P3. This suppresses the progress of the reaction of the photoreactive thin film during the transfer of the substrate W.

[0030] When the substrate W is transported through the transport space S2, the gate valves V2 and V4 may remain open. That is, when the substrate W is transported into or out of the pressure adjustment chambers 41 and 42, the gate valves V1 and V3 may be opened with the gate valve V5 closed. When the substrate W is transported into or out of the exposure machine 30, the gate valve V5 may be opened with the gate valves V1 and V3 closed. On the other hand, when the substrate W is transported through the transport space S2, the gate valves V2 and V4 may also be opened and closed. That is, when the substrate W is transported into or out of the pressure adjustment chambers 41 and 42, the gate valves V1 and V3 may be opened with the gate valves V2 and V4 closed. When the substrate W is transported into or out of the pressure adjustment chambers 41 and 42 and the transport space S2, the gate valves V2 and V4 may be opened with the gate valves V1, V3 and V5 closed. When the substrate W is loaded into or unloaded from the exposure tool 30, the gate valve V5 may be opened while the gate valves V2 and V4 are closed.

[0031] The controller Ctr is configured to partially or completely control the substrate processing system 1 .

[0032] [Substrate processing method] 1 and 2, a method for processing the substrate W by the substrate processing system 1 will be described. Note that, when processing the substrate W, the insides of the dry lithography apparatus 20, the exposure machine 30, and the connection station 40 are all depressurized to a pressure lower than atmospheric pressure.

[0033] First, the substrate W is removed from the carrier in the load / unload station 10, and is loaded from the load / unload station 10 into the dry lithography apparatus 20. Next, lithography processing is performed on the substrate W in the lithography chamber U, and a photoreactive thin film is formed on the surface of the substrate W. Next, the substrate W is transported to the exposure machine 30 via the transport space S2 of the connection station 40. Next, exposure processing is performed on the photoreactive thin film formed on the surface of the substrate W.

[0034] Next, the substrate W is transported to the dry lithography apparatus 20 through the transport space S2 of the connection station 40. Next, lithography processing is performed on the substrate W in the lithography chamber U, and a development process of the photoreactive thin film after exposure and an etching process of the substrate W are performed. Thereafter, the substrate W is transported from the dry lithography apparatus 20 to the carry-in / out station 10 and returned into the carrier. With the above, the processing of the substrate W is completed.

[0035] [Effect] According to the above example, the connection station 40 is adjacent to the exposure machine 30, and the substrate W is transported between the dry lithography apparatus 20 and the exposure machine 30 through the transport space S2 of the connection station 40. This shortens the transport path of the substrate W between the dry lithography apparatus 20 and the exposure machine 30. This makes it possible to efficiently perform dry lithography processing.

[0036] According to the above example, the pressure in the transfer space S2 is reduced by the pressure adjustment unit P3, so that the substrate W is transferred while maintaining the reduced pressure state in the exposure space S1 in the exposure machine 30 and in the dry lithography apparatus 20. Therefore, it is not necessary to provide a load lock chamber that switches the internal pressure between atmospheric pressure and reduced pressure in the transfer path of the substrate W between the dry lithography apparatus 20 and the exposure machine 30. As a result, the time required for switching the pressure in the load lock chamber during the transfer of the substrate W is omitted, so that dry lithography processing can be performed more efficiently.

[0037] [Variations] The disclosure in this specification should be considered to be illustrative and not restrictive in all respects. Various omissions, substitutions, modifications, etc. may be made to the above examples without departing from the scope of the claims and the gist thereof.

[0038] (1) As illustrated in Fig. 3, the dry lithography apparatus 20 may be a multi-chamber cluster module in which a transport unit 21 having a transport arm A1 is arranged in the center, and multiple lithography chambers U are connected around the transport unit 21. As illustrated in Fig. 3, a load / unload station 10 may be arranged between the dry lithography apparatus 20 and the connection station 40. Alternatively, the transport unit 21 and the connection station 40 may be connected without the load / unload station 10, and the load / unload station 10 may be connected around the transport unit 21.

[0039] (2) As illustrated in FIG. 4, the dry lithography apparatus 20 may be disposed on the side of the connection station 40, and the wet lithography apparatus 20A may be disposed between the loading / unloading station 10 and the connection station 40. The wet lithography apparatus 20A is configured to perform lithography processing on a substrate mainly using a processing liquid. Therefore, the pressure inside the wet lithography apparatus 20A is set to a pressure equivalent to atmospheric pressure or a positive pressure. Here, in this specification, the lithography processing by the wet lithography apparatus 20A includes various processes (excluding the exposure processing of the resist film) for patterning the surface of the substrate W, such as a process for forming a resist film on the surface of the substrate W, a development process of the resist film after exposure, a heat treatment on the substrate W, and an etching process on the substrate W. Note that in the lithography processing of the substrate W in the wet lithography apparatus 20A, a process using a gas may be partially performed on the substrate W. In the example of FIG. 4, the pressure adjusting unit P3 may adjust the pressure in the transfer space S2 between atmospheric pressure or positive pressure and a pressure approximately equal to the pressure in the exposure space S1 (that is, atmospheric pressure or positive pressure to ultra-high vacuum).

[0040] 4, the substrate W processed in the wet lithography apparatus 20A can be carried into the exposure apparatus 30 via the connection station 40, and the substrate W processed in the exposure apparatus 30 can be carried out to the wet lithography apparatus 20A via the connection station 40. That is, the pressure in the transfer space S2 is adjusted by the pressure adjustment unit P3 between atmospheric pressure or positive pressure and a pressure lower than that, so that the substrate W processed under atmospheric pressure or positive pressure can be carried in and out of the exposure apparatus 30. Therefore, various types of substrates W can be handled in the substrate processing system 1, and therefore the efficiency of substrate processing can be improved.

[0041] (3) As illustrated in FIG. 5, the substrate processing system 1 may further include a connection station 40A (another connection unit) and a pressure adjustment unit P3A. The connection stations 40, 40A may be stacked vertically. The connection station 40A may be configured to connect the dry lithography apparatus 20 and the exposure machine 30. The connection station 40A may be configured similarly to the connection station 40 and may include a pressure adjustment chamber and a transfer chamber (not shown). The connection station 40A may include a plurality of pressure adjustment chambers arranged horizontally or vertically, similarly to the connection station 40. The inside of the pressure adjustment chamber and the transfer chamber may form a transfer space (not shown) in which the substrate W is transferred. In the example of FIG. 5, the transfer space of the connection station 40A is adjacent to the internal space of the dry lithography apparatus 20 and adjacent to the exposure space S1 of the exposure machine 30.

[0042] The pressure adjustment unit P3A is connected to the pressure adjustment chamber and the transfer chamber of the connection station 40A. The pressure adjustment unit P3A may be configured to adjust the pressure in the pressure adjustment chamber and the transfer space of the transfer chamber of the connection station 40A between atmospheric pressure or positive pressure and a pressure lower than that, based on a control signal from the controller Ctr. The pressure adjustment unit P3A may adjust the pressure in the transfer space between atmospheric pressure or positive pressure and a pressure approximately equal to the pressure in the exposure space S1 (i.e., atmospheric pressure or positive pressure to ultra-high vacuum).

[0043] According to the example of Fig. 5, for example, a substrate processed in an external device can be carried into the exposure tool 30 via the dry lithography tool 20 and the connection station 40A. According to the example of Fig. 5, a substrate W processed in the exposure tool 30 can be carried out to an external device via the dry lithography tool 20 and the connection station 40A.

[0044] The pressure adjustment unit P3A may operate so that the pressure in the connection station 40A becomes equivalent to atmospheric pressure or positive pressure when the substrate W is transferred between the connection station 40A and an external device. In this case, a passage for substrate transfer that is partitioned from the reduced pressure space inside the dry lithography apparatus 20 and communicates with the connection station 40A may be provided inside the dry lithography apparatus 20 so that the reduced pressure space inside the dry lithography apparatus 20 is not opened to the atmosphere. On the other hand, the pressure adjustment unit P3A may operate so that the pressure in the connection station 40A becomes equivalent to the pressure in the exposure space S1 of the exposure apparatus 30 when the substrate W is transferred between the connection station 40A and the exposure machine 30.

[0045] In this way, the pressure in the transfer space of the connection station 40A is adjusted by the pressure adjustment unit P3A between atmospheric pressure or positive pressure and a pressure lower than that, so that the substrate W processed under atmospheric pressure or positive pressure can be carried in and out of the exposure machine. Therefore, various types of substrates can be handled in the substrate processing system 1, and the substrate processing can be made more efficient.

[0046] (4) As illustrated in FIG. 6, the substrate processing system 1 may further include a loading / unloading station 10A, a wet lithography apparatus 20A, a connection station 40A, and a pressure adjustment unit P3A. The loading / unloading station 10A may be configured similarly to the loading / unloading station 10. The wet lithography apparatus 20A may be configured similarly to the wet lithography apparatus 20A illustrated in FIG. 4. The connection station 40A and the pressure adjustment unit P3A may be configured similarly to the connection station 40A and the pressure adjustment unit P3A illustrated in FIG. 5. The loading / unloading station 10A, the wet lithography apparatus 20A, and the connection station 40A may be arranged in a row in this order in the horizontal direction.

[0047] 6, the substrate W processed in the wet lithography apparatus 20A can be carried into the exposure apparatus 30 via the connection station 40A, and the substrate W processed in the exposure apparatus 30 can be carried out to the wet lithography apparatus 20A via the connection station 40A. That is, the pressure in the transfer space of the connection station 40A is adjusted between atmospheric pressure or positive pressure and a pressure lower than that by the pressure adjustment unit P3A, so that the substrate W processed under atmospheric pressure or positive pressure can be carried in and out of the exposure apparatus 30. Therefore, various types of substrates W can be handled in the substrate processing system 1, and therefore the efficiency of substrate processing can be improved.

[0048] As illustrated in FIG. 6, the loading / unloading station 10, the dry lithography apparatus 20, and the connection station 40 may constitute one first unit. The loading / unloading station 10A, the wet lithography apparatus 20A, and the connection station 40A may constitute another second unit. In the substrate processing system 1, the first unit and the second unit may be stacked vertically. In this case, since the connection stations 40 and 40A are arranged vertically, the installation area of ​​the substrate processing system 1 on the floor surface is reduced when viewed from above. Therefore, it is possible to make the substrate processing apparatus compact. FIG. 6(a) shows an example of the substrate processing system 1 in which the second unit is stacked on the first unit. FIG. 6(b) shows an example of the substrate processing system 1 in which the first unit is stacked on the second unit.

[0049] (5) As illustrated in FIG. 7, the substrate processing system 1 may further include a connection station 40A and a pressure adjustment unit P3A. The connection stations 40, 40A may be arranged in the horizontal direction. In this case, since the connection stations 40, 40A are arranged in the horizontal direction, it is possible to simplify the structure when the substrate W is distributed and transported between them. According to the embodiment illustrated in FIG. 7, similarly to the embodiments illustrated in FIGS. 5 and 6, the pressure in the transport space of the connection station 40A is adjusted by the pressure adjustment unit P3A between atmospheric pressure or positive pressure and a pressure lower than that, so that the substrate W processed under atmospheric pressure or positive pressure can be carried in and out of the exposure machine. Therefore, various types of substrates can be handled in the substrate processing system 1, which makes it possible to improve the efficiency of substrate processing.

[0050] As illustrated in FIG. 7(a), the connection station 40A may be configured to connect the dry lithography apparatus 20 and the exposure machine 30. The connection station 40A may be configured similarly to the connection station 40 and may include a pressure adjustment chamber and a transfer chamber (not shown). The inside of the pressure adjustment chamber and the transfer chamber may form a transfer space (not shown) in which the substrate W is transferred. In the example of FIG. 5, the transfer space of the connection station 40A is adjacent to the internal space of the dry lithography apparatus 20 and adjacent to the exposure space S1 of the exposure machine 30. In the example of FIG. 7(a), as in the example of FIG. 5, a passage for substrate transfer that is partitioned from the reduced pressure space and communicates with the connection station 40A may be provided inside the dry lithography apparatus 20 so that the reduced pressure space inside the dry lithography apparatus 20 is not opened to the atmosphere.

[0051] As illustrated in Fig. 7(b), the loading / unloading station 10, the dry lithography apparatus 20, and the connection station 40 may form one first unit, as in the example of Fig. 6. The loading / unloading station 10A, the wet lithography apparatus 20A, and the connection station 40A may form another second unit, as in the example of Fig. 6. Meanwhile, unlike the example of Fig. 6, in the substrate processing system 1, the first unit and the second unit may be arranged side by side in the horizontal direction.

[0052] (6) As illustrated in FIG. 8, the substrate processing system 1 may further include an auxiliary connection station 50 (auxiliary connection unit) and a pressure adjustment unit P4. The auxiliary connection station 50 may be disposed between the dry lithography apparatus 20 and the connection station 40. A gate valve V6 may be provided between the auxiliary connection station 50 and the dry lithography apparatus 20. A gate valve V7 may be provided between the auxiliary connection station 50 and the connection station 40. The gate valves V7 and V8 are configured to open and close based on a control signal from the controller Ctr. The gate valves V7 and V8 are opened when the substrate W is transported between the dry lithography apparatus 20 and the connection station 40.

[0053] The pressure adjustment unit P4 (suction unit) may include an exhaust pump. The pressure adjustment unit P4 may operate in a state where the gate valves V7 and V8 are open when the substrate W is transported between the dry lithography apparatus 20 and the connection station 40. The operation of the pressure adjustment unit P4 forms an airflow from the connection station 40 toward the auxiliary connection station 50 (see the arrow in FIG. 8). Therefore, the pressure adjustment unit P4 may adjust the pressure in the auxiliary connection station 50 to be equal to or higher than the pressure in the internal space of the dry lithography apparatus 20 and lower than the pressure in the transfer space S2 of the connection station 40. In this case, since the airflow toward the auxiliary connection station 50 is formed by the pressure adjustment unit P4, it becomes difficult for micro-substances or gases generated during the processing of the substrate W in the dry lithography apparatus 20 to reach the connection station 40 side beyond the auxiliary connection station 50. Therefore, it is possible to suppress contamination inside the apparatus by the micro-substances or gases.

[0054] The pressure adjustment unit P4 (another pressure adjustment unit) may further include a gas inlet valve (not shown) in addition to the exhaust pump. The pressure adjustment unit P4 (another pressure adjustment unit) may adjust the pressure in the auxiliary connection station 50 between the pressure in the internal space of the dry lithography apparatus 20 and the pressure in the exposure space S1 of the exposure machine 30. For example, when the substrate W is transferred between the dry lithography apparatus 20 and the auxiliary connection station 50, the pressure adjustment unit P4 may operate so that the pressure in the auxiliary connection station 50 becomes equal to the pressure in the internal space of the dry lithography apparatus 20. In this state, the gate valve V6 may be opened while the gate valve V7 is kept closed, and the substrate W may be loaded and unloaded between the dry lithography apparatus 20 and the auxiliary connection station 50. On the other hand, when the substrate W is transferred between the auxiliary connection station 50 and the connection station 40, the pressure adjustment unit P4 may operate so that the pressure in the auxiliary connection station 50 becomes equal to the pressure in the transfer space S2 of the connection station 40. In this state, the substrate W may be transferred between the auxiliary connecting station 50 and the connecting station 40 by opening the gate valve V7 while keeping the gate valve V6 closed.

[0055] According to the embodiment of Example 8, the pressure adjustment unit P4 adjusts the pressure in the relatively narrow space in the auxiliary connection station 50, rather than the pressure in the relatively wide space in the exposure machine 30 or the dry lithography apparatus 20. Therefore, the pressure is quickly adjusted in the auxiliary connection station 50, and the substrate W is transported between the exposure machine 30 and the dry lithography apparatus 20 while maintaining the magnitude relationship between the pressure in the exposure machine 30 and the dry lithography apparatus 20. Therefore, when transporting the substrate W, the time required for adjusting the pressure in the exposure machine 30 and the dry lithography apparatus 20 is omitted, so that the dry lithography process can be performed more efficiently.

[0056] (7) In the above examples, a moisture supply unit (not shown) that supplies moisture to the substrate W may be provided inside the connection station 40 or the lithography apparatus (including both the dry lithography apparatus 20 and the wet lithography apparatus 20A). For example, the moisture supply unit may be configured to supply moisture in a gaseous or liquid state toward the substrate W to the space in which the substrate W is placed. The moisture supply unit may be configured to supply moisture to a positive pressure space, or may be configured to supply moisture to a reduced pressure space. The substrate W to which moisture is supplied may be the substrate W before the exposure process is performed, or may be the substrate W after the exposure process is performed.

[0057] [Other examples] Example 1. An example of a substrate processing apparatus includes a dry lithography apparatus configured to perform lithography processing on a substrate mainly by gas, and a connection unit configured to connect an exposure machine configured to expose the substrate to light and the dry lithography apparatus. The connection unit is adjacent to the exposure space of the exposure machine and includes a transport space for transporting the substrate between the exposure machine and the dry lithography apparatus. In this case, the connection unit is adjacent to the exposure machine, and the substrate is transported between the dry lithography apparatus and the exposure machine through the transport space of the connection unit. Therefore, the transport path of the substrate between the dry lithography apparatus and the exposure machine is shortened. Therefore, it is possible to efficiently perform dry lithography processing.

[0058] Example 2 The apparatus of Example 1 may further include a pressure reducing unit configured to reduce the pressure in the transport space to a pressure lower than atmospheric pressure during the transport of the substrate through the transport space. Here, the exposure space in the exposure machine and the dry lithography machine are usually reduced in pressure to less than atmospheric pressure. In the case of Example 2, the pressure in the transport space is reduced by the pressure reducing unit, so that the substrate is transported while maintaining the reduced pressure state in the exposure space in the exposure machine and the dry lithography machine. Therefore, it is not necessary to provide a load lock chamber that switches the internal pressure between atmospheric pressure and reduced pressure in the transport path of the substrate between the dry lithography machine and the exposure machine. As a result, the time required for pressure switching in the load lock chamber during the transport of the substrate is omitted, so that the dry lithography process can be performed more efficiently.

[0059] Example 3 The apparatus of Example 1 or Example 2 may further include another connection unit configured to connect the exposure machine and the dry lithography machine, and a pressure adjustment unit, the other connection unit including another transport space adjacent to the exposure space of the exposure machine and for transporting the substrate between the exposure machine and the dry lithography machine, and the pressure adjustment unit may be configured to adjust the pressure in the other transport space between atmospheric pressure and a pressure lower than atmospheric pressure during the transport of the substrate through the other transport space. In this case, for example, a substrate processed in an external device can be carried into the exposure machine via the dry lithography machine and the pressure adjustment unit, or a substrate processed in the exposure machine can be carried out to an external device via the dry lithography machine and the pressure adjustment unit. That is, the pressure in the other transport space is adjusted between atmospheric pressure and a pressure lower than atmospheric pressure by the pressure adjustment unit, so that a substrate processed under atmospheric pressure can be carried in and out of the exposure machine. Therefore, various types of substrates can be handled in the substrate processing apparatus, and therefore the efficiency of substrate processing can be improved.

[0060] Example 4 The apparatus of Example 1 or Example 2 further includes a wet lithography apparatus configured to perform lithography processing on a substrate mainly using a processing liquid, another connection unit configured to connect the exposure machine and the wet lithography apparatus, and a pressure adjustment unit, and the pressure adjustment unit may be configured to adjust the pressure in the other transport space between atmospheric pressure and a pressure lower than atmospheric pressure during transport of the substrate through the other transport space. In this case, the substrate processed in the wet lithography apparatus can be carried into the exposure machine via the pressure adjustment unit, and the substrate processed in the exposure machine can be carried out to the wet lithography apparatus via the pressure adjustment unit. That is, the pressure in the other transport space is adjusted between atmospheric pressure and a pressure lower than atmospheric pressure by the pressure adjustment unit, so that the substrate processed under atmospheric pressure can be carried in and out of the exposure machine. Therefore, various types of substrates can be handled in the substrate processing apparatus, and therefore the efficiency of substrate processing can be improved.

[0061] Example 5: In the apparatus of Example 3 or Example 4, the connection part and the other connection part may be arranged vertically. In this case, since the connection part and the other connection part are arranged vertically, the installation area of ​​the substrate processing apparatus relative to the floor surface is reduced when viewed from above. Therefore, it is possible to make the substrate processing apparatus more compact.

[0062] Example 6 In the device of Example 3 or Example 4, the connection part and the other connection part may be arranged horizontally. In this case, since the connection part and the other connection part are arranged horizontally, it is possible to simplify the structure when the substrates are distributed between them and transported.

[0063] Example 7 Any of the apparatuses of Examples 1 to 6 may further include an auxiliary connection part disposed between the connection part and the dry lithography apparatus, and a suction part configured to form an airflow from the connection part toward the auxiliary connection part. In this case, since the airflow toward the auxiliary connection part is formed by the suction part, micro-substances or gases generated during the processing of the substrate in the dry lithography apparatus are unlikely to reach the connection part side beyond the auxiliary connection part. Therefore, it is possible to suppress contamination of the inside of the apparatus by the micro-substances or gases.

[0064] Example 8 Any of the apparatuses of Examples 1 to 7 may further include an auxiliary connection portion disposed between the connection portion and the dry lithography apparatus, and another pressure adjustment portion configured to adjust the pressure in the auxiliary connection portion between the pressure in the exposure machine and the pressure in the dry lithography apparatus. Here, the exposure space in the exposure machine and the dry lithography apparatus are usually reduced in pressure below atmospheric pressure, but the pressure in the exposure space in the exposure machine tends to be set lower than the pressure in the dry lithography apparatus. In the case of Example 8, the pressure in the relatively narrow space in the auxiliary connection portion is adjusted by another pressure adjustment portion, not the pressure in the relatively wide space in the exposure machine or the dry lithography apparatus. Therefore, the pressure adjustment is performed quickly in the auxiliary connection portion, and the substrate is transported between the exposure machine and the dry lithography apparatus while maintaining the magnitude relationship between the pressure in the exposure machine and the pressure in the dry lithography apparatus. Therefore, the time required for adjusting the pressure inside the exposure machine and the dry lithography apparatus during substrate transport is eliminated, making it possible to carry out dry lithography processing more efficiently.

[0065] Example 9. An example of a substrate processing method includes transporting a substrate to a dry lithography apparatus configured to perform lithography processing on the substrate mainly by gas, performing lithography processing on the substrate mainly by gas in the dry lithography apparatus, transporting the substrate on which lithography processing has been performed to an exposure machine via a connection part connected to the dry lithography apparatus and the exposure machine, and exposing the substrate in the exposure machine. The connection part includes a transport space adjacent to the exposure space of the exposure machine and for transporting the substrate between the exposure machine and the dry lithography apparatus. In this case, the same action and effect as the apparatus of Example 1 can be obtained. [Explanation of symbols]

[0066] 1...substrate processing system (substrate processing apparatus), 20...dry lithography apparatus, 20A...wet lithography apparatus, 30...exposure machine, 40...connection station (connection section), 40A...connection station (another connection section), 50...auxiliary connection station (auxiliary connection section), Ctr...controller (control section), P3...pressure adjustment section (pressure reduction section), P3A...pressure adjustment section, P4...pressure adjustment section (suction section, another pressure adjustment section), S1...exposure space, S2...transfer space, U...lithography chamber.

Claims

1. a dry lithography apparatus configured to perform a lithography process on a substrate primarily using gas; a connection unit configured to connect an exposure machine configured to expose the substrate to the dry lithography apparatus; The connection portion is adjacent to an exposure space of the exposure machine, and includes a transport space for transporting the substrate between the exposure machine and the dry lithography apparatus.

2. The apparatus of claim 1 , further comprising a pressure reducing unit configured to reduce a pressure in the transfer space to a pressure less than atmospheric pressure during transfer of the substrate through the transfer space.

3. another connection configured to connect the exposure machine and the dry lithography apparatus; A pressure adjusting unit is further provided, the other connection portion includes another transport space adjacent to an exposure space of the exposure machine and for transporting the substrate between the exposure machine and the dry lithography apparatus; The apparatus of claim 1 , wherein the pressure adjusting unit is configured to adjust the pressure in the other transfer space between atmospheric pressure and a pressure less than atmospheric pressure during transfer of the substrate through the other transfer space.

4. a wet lithography apparatus configured to perform lithography processing on a substrate mainly using a processing liquid; another connection configured to connect the exposure machine and the wet lithography apparatus; A pressure adjusting unit is further provided, The apparatus of claim 1 , wherein the pressure adjusting unit is configured to adjust the pressure in the other transfer space between atmospheric pressure and a pressure less than atmospheric pressure during transfer of the substrate through the other transfer space.

5. The device according to claim 3 or 4, wherein the connection portion and the another connection portion are aligned in the vertical direction.

6. The device according to claim 3 or 4, wherein the connection portion and the further connection portion are aligned in a horizontal direction.

7. an auxiliary connection portion disposed between the connection portion and the dry lithography apparatus; The device according to any one of claims 1 to 4, further comprising a suction portion configured to create an air flow from the connection portion toward the auxiliary connection portion.

8. an auxiliary connection portion disposed between the connection portion and the dry lithography apparatus; The apparatus of any one of claims 1 to 4, further comprising a separate pressure adjusting unit configured to adjust the pressure in the auxiliary connection between the pressure in the exposure machine and the pressure in the dry lithography apparatus.

9. Transporting the substrate to a dry lithography apparatus configured to perform a lithography process on the substrate primarily with gas; performing a lithography process on the substrate mainly using gas in the dry lithography apparatus; transporting the substrate that has been subjected to the lithography processing to an exposure machine via a connection portion that is connected to the dry lithography apparatus and the exposure machine; exposing the substrate in the exposure machine; A substrate processing method, wherein the connection portion is adjacent to an exposure space of the exposure machine and includes a transport space for transporting the substrate between the exposure machine and the dry lithography apparatus.

Images