Temperature detection system

Abstract

To provide a temperature detection system that effectively increases the number of temperature sensors arranged on a wafer, expands the detectable area, and ensures improved detection flexibility.SOLUTION: In a temperature detection system including a wafer, multiple sensing modules, and a probe, a wafer 120 includes multiple dies 122. The sensing modules 130 are adjacent to the dies 122, and each of the sensing modules 130 includes a temperature sensor 132 and multiple pads 134. The pads 134 are electrically connected to the temperature sensor 132. The sensing modules 130 transmit detection signals via the probe.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a temperature detection system. [Background technology]

[0002] In the existing method of detecting the temperature on the wafer, the temperature sensor on the wafer is generally connected to the data collection module by wiring to obtain the temperature information from the wafer. However, the amount of wiring increases with the increase in the number of temperature sensors, and in this existing method, the capacity of the data collection module for collecting data is limited, so it is unlikely that the number of temperature sensors on the wafer can be effectively increased. Therefore, the detectable area is limited, and the flexibility of detection is reduced. Summary of the Invention [Problem to be solved by the invention]

[0003] The present invention provides a temperature detection system that provides increased detection flexibility. [Means for solving the problem]

[0004] According to one embodiment of the present invention, there is provided a temperature detection system including a wafer, a plurality of sensing modules, and a probe. The wafer includes a plurality of dies. The sensing modules are adjacent to the dies, and each sensing module includes a temperature sensor and a plurality of pads. The pads are electrically connected to the temperature sensor. The sensing modules transmit a detection signal via the probe.

[0005] In one embodiment of the invention, the pads include multiple sets of pads having different pitches, with one of the sets of pads configured for direct contact with the probes.

[0006] In one embodiment of the invention, a portion of the set of pads is aligned in a first direction and another portion of the set of pads is aligned in a second direction perpendicular to the first direction.

[0007] In one embodiment of the invention, the pitch change in one portion of a set of pads is the same as the pitch change in another portion of the set of pads.

[0008] In one embodiment of the invention, a set of pads surrounds an angular location of the die that corresponds to the set of pads.

[0009] In one embodiment of the present invention, the die and the sensing module are configured one-to-one.

[0010] In one embodiment of the invention, the temperature sensor is a resistance temperature detector (RTD).

[0011] In one embodiment of the present invention, the RTD is a platinum resistor sensor.

[0012] In one embodiment of the invention, the wafer is a silicon dioxide wafer.

[0013] In one embodiment of the invention, the temperature sensor is soldered to the surface of the wafer. Effect of the Invention

[0014] Based on the above, in the temperature detection system provided in one or more embodiments of the present invention, the combined design of the sensing module and the probe can leave layout space for additional wiring, while collecting a relatively large amount of data, thereby ensuring that the sensing module can be configured to multiple positions to be detected on the wafer according to actual requirements, effectively increasing the number of temperature sensors arranged on the wafer, expanding the detectable area, and improving the detection flexibility.

[0015] In order to explain the present invention in more detail, several exemplary embodiments are described in detail below accompanied with drawings. [Brief description of the drawings]

[0016] [Figure 1] 1 is a schematic diagram illustrating a temperature detection device including a temperature detection system according to some embodiments of the present invention. [Diagram 2] 1 is a schematic diagram illustrating a wafer of a temperature detection system according to some embodiments of the present invention. [Diagram 3] FIG. 3 is an enlarged view of area A shown in FIG. 2. [Figure 4] FIG. 3 is an enlarged view of area B shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] In the following detailed description, for purposes of explanation and not limitation, exemplary embodiments disclosing specific details are set forth in order to provide a thorough understanding of the various principles of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced in other embodiments that depart from the specific details disclosed herein. Moreover, descriptions of well-known devices, methods and materials may be omitted so as not to obscure the description of the various principles of the present invention.

[0018] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the drawings, but the present invention can be implemented in many different forms and should not be construed as being limited to the embodiments described herein. In the drawings, for clarity, the relative sizes, thicknesses, and positions of each region, part, and / or layer are not necessarily drawn to scale, and some components may be omitted.

[0019] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art.

[0020] FIG 1 is a schematic diagram illustrating a temperature detection device including a temperature detection system according to some embodiments of the present invention. FIG 2 is a schematic diagram illustrating a wafer of a temperature detection system according to some embodiments of the present invention. FIG 3 is an enlarged view of area A illustrated in FIG 2. FIG 4 is an enlarged view of area B illustrated in FIG 2.

[0021] 1 to 4, in this embodiment, the temperature detection device 100 includes a transport device 110 and a temperature detection system, and the temperature detection system includes a wafer 120, a plurality of sensing modules 130, and a probe 144. Specifically, the wafer 120 may be placed on the transport device 110 and may be transported by the transport device 110 to perform detection, and the probe 144 is located at the top region 110R of the transport device 110. Here, the probe 144 may be from a probe device 140, and the types of the transport device 110 and the probe device 140 may assume any suitable type. For example, the transport device 110 may be a prober, and the probe device 140 may be a probe card or a suitable probe station, but this should not be construed as limiting the present invention. As long as the transport device 110 and the probe device 140 are configured to facilitate connection with the sensing module 130 and perform temperature detection, the transport device 110 and the probe device 140 are included in the protection scope of the present invention. On the other hand, the wafer 120 and the probe apparatus 140 may be attached to the transport apparatus 110 in any suitable manner; for example, although the probe apparatus 140 is incorporated into the transport apparatus 110 as shown in FIG. 1, the probe apparatus 140 may be positioned on the transport apparatus 110 or may or may not be fixed to the transport apparatus 110.

[0022] Specifically, the wafer 120 has a number of dies 122, the sensing modules 130 are adjacent to the dies 122, each sensing module 130 includes a temperature sensor 132 and a number of pads 134, and the pads 134 are electrically connected to the temperature sensor 132. In addition, the sensing modules 130 transmit detection signals through the probes 144. Therefore, the combined design of the sensing modules 130 and the probes 144 allows the temperature detection system provided in this embodiment to collect a relatively large amount of data while leaving layout space for additional wiring. Thereby, the sensing modules 130 can be provided at a number of positions to be detected (e.g., positions where the temperature is abnormal) on the wafer 120 based on the actual requirements, thus effectively increasing the number of temperature sensors 132 arranged on the wafer 120, expanding the detectable area, and further ensuring the improvement of detection flexibility. Here, the dies 122 may be of any suitable type and size (e.g., 2000 micrometers x 20000 micrometers), which should not be construed as limiting the present invention.

[0023] 1, where the probe apparatus 140 is a probe card, the probe apparatus 140 may include a body 142 and a number of probes 144, although this should not be construed as limiting the invention. In one embodiment not shown, where the probe apparatus 140 is another suitable probe station, the number of bodies and the number of probes may be multiple (e.g., two), and the bodies and probes may be configured and operated in any suitable manner and will not be described further herein.

[0024] In some embodiments, the temperature detection device 100 further includes a tester 112 to collect and / or analyze corresponding temperature data (e.g., signals transmitted by the probe 144). The tester 112 may be additionally configured on the transport device 110 or may be incorporated into the transport device 110, although this should not be construed as a limitation of the present invention.

[0025] In some embodiments, each 12-inch wafer 120 may be provided with 149 temperature sensors 132. Therefore, compared with the number of temperature sensors arranged on an existing 12-inch wafer 120 that can only have 13 temperature sensors, the number of temperature sensors 132 arranged on the wafer 120 provided in this embodiment can be significantly increased, but this should not be construed as limiting the present invention. For example, the die 122 and the sensing module 130 are configured one-to-one, and the amount of temperature sensors 132 arranged on the wafer 120 may be adjusted according to the size of the wafer 120 (e.g., 6 inches, 8 inches, etc.) and the number of dies 122 on the wafer 120.

[0026] In some embodiments, as shown in FIGS. 2 to 4, the pads 134 include multiple sets of pads with different pitches, for example, a first set of pads S1, a second set of pads S2, a third set of pads S3, a fourth set of pads S4, a fifth set of pads S5, a sixth set of pads S6, a seventh set of pads S7, and an eighth set of pads S8. One of the sets of pads is configured to directly contact the probe 144. Thus, when the probe 144 is a probe card, the same sensing module 130 can be applied for detection even if the probe card has different specifications. That is, there is no need to manufacture a sensing module 130 having specifications corresponding to different specifications of the probe card. For this reason, the temperature detection device 100 provided in this embodiment has a multi-card compatible design to effectively reduce the detection cost and simplify the detection step, but this should not be construed as limiting the present invention. Here, the pitch is, for example, the distance P between the center points of adjacent pads (see FIG. 3).

[0027] Also, a part of the set of pads (e.g., the first set of pads S1, the second set of pads S2, the third set of pads S3, and the fourth set of pads S4) are arranged in a first direction D1, and another part of the set of pads (e.g., the fifth set of pads S5, the sixth set of pads S6, the seventh set of pads S7, and the eighth set of pads S8) are arranged in a second direction D2 perpendicular to the first direction D1. In other words, the set of pads (e.g., the first set of pads S1, the second set of pads S2, the third set of pads S3, the fourth set of pads S4, the fifth set of pads S5, the sixth set of pads S6, the seventh set of pads S7, and the eighth set of pads S8) may surround the corner position of the corresponding die 122 as shown in FIG. 2. This allows the pads for detection to be present in different directions. In this design, when the wafer 120 is rotated, the probes 144 do not need to rotate or move correspondingly to increase the detection speed, but this should not be construed as a limitation of the present invention.

[0028] In some embodiments, the change in pitch in a portion of the set of pads (e.g., the first set of pads S1, the second set of pads S2, the third set of pads S3, and the fourth set of pads S4) is the same as the change in pitch in another portion of the set of pads (e.g., the fifth set of pads S5, the sixth set of pads S6, the seventh set of pads S7, and the eighth set of pads S8). For example, in the first direction D1, the first set of pads S1, the second set of pads S2, the third set of pads S3, and the fourth set of pads S4 are ranked from largest to smallest in their pitch, and in the second direction D2, the fifth set of pads S5, the sixth set of pads S6, the seventh set of pads S7, and the eighth set of pads S8 are ranked from largest to smallest in their pitch. The pitch of the first set of pads S1 and the pitch of the eighth set of pads S8 is, for example, 1000 micrometers, the pitch of the second set of pads S2 and the pitch of the seventh set of pads S7 is, for example, 190 micrometers, the pitch of the third set of pads S3 and the pitch of the sixth set of pads S6 is, for example, 130 micrometers, and the pitch of the fourth set of pads S4 and the pitch of the fifth set of pads S5 is, for example, 100 micrometers, but this should not be construed as limiting the present invention. The numerical values ​​of the pitches may be larger or smaller depending on the actual design requirements.

[0029] In some embodiments, each pad 134 in each set of pads has the same size, and the size and pitch of each set of pads correspond to each other. For example, the first set of pads S1 and the eighth set of pads S8 are square pads with a side length of 950 micrometers, the second set of pads S2 and the seventh set of pads S7 are square pads with a side length of 140 micrometers, the third set of pads S3 and the sixth set of pads S6 are square pads with a side length of 80 micrometers, and the fourth set of pads S4 and the fifth set of pads S5 are square pads with a side length of 50 micrometers, but this should not be construed as limiting the present invention. The numerical values ​​of the pad sizes may be larger or smaller according to actual design requirements, and the shapes of the pads may also be adjusted according to actual design requirements.

[0030] In some embodiments, the pads 134 of any one of the first set of pads S1, the second set of pads S2, the third set of pads S3, and the fourth set of pads S4 are arranged in the second direction D2, and the pads 134 of any one of the fifth set of pads S5, the sixth set of pads S6, the seventh set of pads S7, and the eighth set of pads S8 are arranged in the first direction D1. In other words, the arrangement direction of the pads in each set of pads may be perpendicular to the arrangement direction of the set of pads, but this should not be construed as limiting the present invention.

[0031] In some embodiments, the temperature sensors 132 in each sensing module 130 may be selectively arranged in only one direction. For example, in FIG. 2, the temperature sensors 132 shown in solid lines are arranged corresponding to the first set S1 of pads in the first direction D1, and the temperature sensors 132 shown in dashed lines are arranged corresponding to the eighth set S8 of pads in the second direction D2. Here, it is highly likely that one of the temperature sensors 132 shown in solid lines and the temperature sensors 132 shown in dashed lines is selectively disposed on the wafer 120.

[0032] In some embodiments, the temperature sensor 132 is a high-precision resistance temperature detector (RTD). Therefore, when the temperature on the wafer 120 changes, a different resistance is correspondingly generated. In this manner, temperature information can be obtained from the resistance conversion. The RTD may be a platinum (Pt) resistor sensor, but this should not be construed as a limitation of the present invention. Herein, the wafer 120 on which the sensing module 130 is mounted may be referred to as an RTD wafer.

[0033] In some embodiments, the electrical connection between the temperature sensor 132 and the pads 134 may be achieved by using a four-wire connection method, which allows the RTD as the temperature sensor 132 to facilitate improved measurement accuracy, temperature range to be detected, and detection flexibility. In addition, the fourth set of pads S4 and the fifth set of pads S5, which are relatively narrow and have the same pitch, can be electrically connected by wires 136 to communicate the pads 134 in different directions, but this should not be construed as a limitation of the present invention.

[0034] It should be noted that, although eight sets of pads are illustratively provided in this embodiment for explanation, the number of sets of pads should not be construed as limiting the present invention, that is, whether the sets of pads arranged in one direction are more or less than four sets, they are within the scope of protection of the present invention as long as the pads are electrically connected to the temperature sensor and the sensing module including the pads and the temperature sensor transmits the detection signal through the probe.

[0035] In some embodiments, the Pt resistor sensor may be a PT-100 element or a PT-1000 element. When the PT-100 element is at 0° C., the temperature sensor 132 correspondingly reads 100 ohms, and the resistance increases by 0.385 for every 1° C. rise. When the PT-1000 element is at 0° C., the temperature sensor 132 correspondingly reads 1000 ohms, and the resistance increases by 3.85 for every 1° C. rise. Here, when the temperature detection device 100 provided in this embodiment uses these two temperature sensing elements, the measurable temperature range is -55° C. to 175° C., and the measurement accuracy is -55° C. to 100° C.±0.86° C., 100° C. to 175° C.±1.24° C., which is suitable for preventive maintenance (PM), repair, and mass production.

[0036] It should be noted that the type of Pt resistor sensor is not limited in the present invention and may be selected according to the actual design requirements. For example, the sensing module 130 has a sensing pattern (e.g., pad 134 and wiring 136), and a contact resistance (e.g., less than 5 ohms) is generated when the probe 144 is used for contact measurement. If the effect of the contact resistance is not large, the PT-100 element, which can be easily calibrated, may be used. If the effect of the contact resistance is large, the PT-1000 may be selected to more effectively reduce the adverse effect of the contact resistance on the measurement.

[0037] In some embodiments, there is a distance of at least one centimeter between the temperature sensor 132 and the adjacent die 122, which serves as a safety space for the movement of the probe 144. In this way, the possibility of damaging surrounding elements during the movement of the probe 144 can be reduced, but this should not be construed as a limitation of the present invention.

[0038] In some embodiments, the temperature detection system may serve to measure the electrical performance of the wafer 120, although this should not be construed as a limitation of the present invention.

[0039] The detection method using the temperature detection device 100 is described below. The sensing module 130 to be measured moves under the probe 144. Then, the probe 144 can be used to directly contact the pads 134 in the sensing module 130 to obtain data from the temperature sensor 132. For example, in the four-wire connection method provided in this embodiment, if the probe device 140 is a probe card, the four probes 144 contact some or all of the pads 134 in the same set of pads at the same time. In another embodiment, if the probe device 140 is a probe station, the probe device 140 may have two probe sheets, each of which has two probes that contact the pads 134 in the same set of pads separately or simultaneously to form a loop. The data obtained from the temperature sensor 132 may be optionally transmitted to the tester 112 for collection to complete the detection step. In this way, the layout width of the sensing module 130 and the high mobility of the probe 144 can contribute to achieving flexible detection of the area to be detected on the wafer 120.

[0040] In some embodiments, the wafer 120 is a silicon dioxide wafer, so that the pads 134 and the traces 136 can be fabricated directly on the wafer 120 by a photolithography process, such as exposure, development, and etching, thereby allowing the pads 134 to be precisely formed at desired locations. Here, the temperature sensor 132 is, for example, soldered to the surface of the wafer 120, and the soldering process is, for example, a surface mount technology (SMT) process, but this should not be construed as a limitation of the present invention.

[0041] In summary, in the temperature detection system provided in one or more embodiments of the present invention, the combined design of the sensing module and the probe can leave layout space for additional wiring, while collecting a relatively large amount of data, which ensures that the sensing module can be configured to multiple positions to be detected on the wafer according to actual requirements, effectively increasing the number of temperature sensors arranged on the wafer, expanding the detectable area, and improving the detection flexibility.

[0042] It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations provided they come within the scope of the following claims and their equivalents. [Industrial Applicability]

[0043] The temperature detection system of the present invention effectively increases the number of temperature sensors placed on the wafer, expanding the detectable area and ensuring improved detection flexibility. [Explanation of symbols]

[0044] 100: Temperature detection device 110: Transport device 110R: Top area 112: Tester 120: Wafer 122: Die 130: Sensing module 132: Temperature sensor 134: Pad 136: Wiring 140: Probe device 142: Main body 144: Probe A, B: Area D1: First direction D2: Second direction S1: First set of pads S2: Second set of pads S3: Third set of pads S4: Fourth set of pads S5: 5th set of pads S6: 6th set of pads S7: 7th set of pads S8: 8th set of pads P: distance

Claims

1. a wafer having a plurality of dies; a plurality of sensing modules adjacent to the die; Probe and Including, Each of the sensing modules includes a temperature sensor and a plurality of pads electrically connected to the temperature sensor; The sensing module transmits a detection signal through the probe.

2. The temperature detection system of claim 1 , wherein the pads include a plurality of sets of pads having different pitches, one of the sets of pads configured to directly contact the probe.

3. 3. The temperature detection system of claim 2, wherein a portion of the set of pads are arranged in a first direction and another portion of the set of pads are arranged in a second direction perpendicular to the first direction.

4. The temperature detection system of claim 3 , wherein the pitch change in the one portion of the set of pads is the same as the pitch change in the other portion of the set of pads.

5. The temperature detection system of claim 2 , wherein the set of pads surrounds an angular position of the die corresponding to the set of pads.

6. The temperature detection system of claim 1 , wherein the die and the sensing module are configured in a one-to-one relationship.

7. The temperature detection system of claim 1 , wherein the temperature sensor is a resistance temperature detector.

8. The temperature detection system according to claim 7 , wherein the resistance temperature detector is a platinum resistance sensor.

9. The temperature detection system of claim 1 , wherein the wafer is a silicon dioxide wafer.

10. The temperature detection system of claim 1 , wherein the temperature sensor is soldered to a surface of the wafer.

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