Reconfigurable reflect array structure and control circuit having the same

Abstract

To provide a reconfigurable reflect array structure.SOLUTION: A reconfigurable reflect array structure includes: a phase shift switching diode; and a metal circuit including a first metal member coupled to one end of the phase shift switching diode and a second metal member coupled to the other end of the phase shift switching diode. One of the first metal member and the second metal member includes a first radiation unit and a second radiation unit. The first radiation unit is located between the phase shift switching diode and the second radiation unit and has a first length. The second radiation unit has a second length different from the first length. Therefore, the reconfigurable reflect array structure has a dumbbell shape or a double-ring shape, characteristics of a wide band and a wide scanning range, and a simple structure, is low in cost and loss, and is very suitable for application to wireless mobile communication.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a reflectarray structure and a control circuit having the reflectarray structure, and more particularly to a reconfigurable reflectarray structure and a control circuit having the reconfigurable reflectarray structure. [Background technology]

[0002] In the fifth generation (5G) mobile communication application, the efficiency of spectrum and space utilization of radio waves is one of the two key issues, and especially in terms of frequency, millimeter waves are a necessary development direction. Conventional technologies often use the method of increasing the number of base stations or amplifiers in the blind spots, dark areas or weak signal areas of radio waves. Compared with the frequency bands used in current wireless communication, the propagation distance and influence range of electromagnetic waves are greatly reduced. Comparing 28GHz and 2.4GHz, with the same signal strength, the transmission distance is reduced by more than 10 times, and the spatial loss is 100 times.

[0003] Currently, the most important issue is the multi-antenna system that increases the number of antennas to 10, or even 100 to 1000. Therefore, the issues of development, installation, integration and measurement of millimeter-wave circuits and antennas are very important. However, although the development of millimeter-wave systems is of course important, if it is completely dependent on the placement of base stations or amplifiers, when facing the placement, the placement of thousands or tens of thousands of base stations closely together will be a large-scale project that requires huge costs and a large amount of manpower, not to mention the subsequent maintenance project. As can be seen from the above, currently, the market lacks a reconfigurable reflectarray structure that is simple, lightweight, low-cost, low-power and easy to control, and a control circuit having a reconfigurable reflectarray structure, so that the relevant industries are all seeking a solution. Summary of the Invention [Problem to be solved by the invention]

[0004] Therefore, the object of the present invention is to provide a reconfigurable reflectarray structure and a control circuit having the reconfigurable reflectarray structure, which utilizes a combination of phase-shift switching diodes and metal circuits to form a dumbbell shape or double ring, and has the characteristics of wide band and wide scanning range, and is simple in structure, low in cost, low in loss, and suitable for application in wireless mobile communication. Furthermore, the control circuit having the reconfigurable reflectarray structure is integrated using easily obtainable elements, and has the characteristics of stable bias voltage, DC link detection and low power consumption. Therefore, the present invention can solve the problem that the known base station or amplifier configuration technology requires huge costs and large amounts of manpower. [Means for solving the problem]

[0005] According to one embodiment of a structural aspect of the present invention, there is provided a Reconfigurable Reflect Array (RRA) structure comprising: a phase shift switching (P-Intrinsic-N; PIN) diode; a metal circuit including a first metal member coupled to one end of the phase shift switching diode; and a second metal member coupled to the other end of the phase shift switching diode, wherein one of the first metal member and the second metal member includes a first radiating portion and a second radiating portion, the first radiating portion is located between the phase shift switching diode and the second radiating portion and has a first length, and the second radiating portion has a second length different from the first length.

[0006] As a result, the reconfigurable reflectarray structure of the present invention uses a combination of phase-shifting switching diodes and metal circuits to form a dumbbell shape, and has the characteristics of wide band and wide scanning range, as well as a simple structure, low cost, and low loss, which is very suitable for application in wireless mobile communications.

[0007] In another embodiment of the above embodiment, the first length is greater than the second length.

[0008] As another example of the above embodiment, the other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase shift switching diode and the fourth radiating portion and has a third length, and the fourth radiating portion has a fourth length different from the third length.

[0009] As another example of the above embodiment, the third length of the third radiating portion is equal to the first length of the first radiating portion, and the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion.

[0010] In another implementation of the above embodiment, the third length is greater than the fourth length such that the phase shift switching diode and the metal circuit are dumbbell shaped.

[0011] As another example of the above embodiment, the fourth radiating portion is provided with a semicircular or arch-shaped protrusion extending in a direction away from the phase shift switching diode.

[0012] According to another embodiment of a structural aspect of the present invention, there is provided a Reconfigurable Reflect Array (RRA) structure comprising: a phase shift switching (P-Intrinsic-N; PIN) diode; a metal circuit including a first metal member electrically connected to one end of the phase shift switching diode; and a second metal member electrically connected to the other end of the phase shift switching diode, wherein one of the first metal member and the second metal member includes a first radiating portion and a second radiating portion, the first radiating portion is located between the phase shift switching diode and the second radiating portion, has a first length and is annular, and the second radiating portion has a second length different from the first length.

[0013] As a result, the reconfigurable reflectarray structure of the present invention uses a combination of phase-shifting switching diodes and metal circuits to form a double ring, and has the characteristics of wide band and wide scanning range, as well as simple structure, low cost and low loss, which is very suitable for application in wireless mobile communications.

[0014] In another embodiment of the above embodiment, the first length is less than the second length.

[0015] As another example of the above embodiment, the second radiating portion is annular and surrounds an outer periphery of the first radiating portion, and the first radiating portion is spaced apart from the second radiating portion by at least one interval.

[0016] As another example of the above embodiment, the first radiating portion surrounds the outer periphery of the phase shift switching diode and the other of the first metal member and the second metal member.

[0017] As another example of the above embodiment, the reconfigurable reflectarray structure further comprises a colloid covering the phase-shifting switching diode and a portion of the metal circuit.

[0018] In another example of the above embodiment, the first radiating portion is rectangular, circular or elliptical, and the second radiating portion is rectangular or arc-shaped.

[0019] According to yet another embodiment of a structural aspect of the present invention, there is provided a control circuit having a reconfigurable reflect array (RRA) structure comprising: a phase shift switching (P-Intrinsic-N; PIN) diode; a first metal member coupled to one end of the phase shift switching diode; and a second metal member coupled to the other end of the phase shift switching diode, one of the first metal member and the second metal member including a first radiating portion and a second radiating portion, the first radiating portion being located between the phase shift switching diode and the second radiating portion and having a first length, and the second radiating portion having a metal circuit having a second length different from the first length; and a control unit connected to the reconfigurable reflect array structure for controlling conduction of the phase shift switching diode.

[0020] As a result, the control circuit with the reconfigurable reflectarray structure of the present invention is integrated using easily obtainable elements, and has the characteristics of stable bias voltage, DC link detection and low power consumption.

[0021] As another example of the above embodiment, the control unit includes a light emitting diode (LED), a bipolar junction transistor (BJT) connected to a reconfigurable reflectarray structure, a resistor unit connected to the light emitting diode and the bipolar junction transistor, and a shift register connected to the resistor unit, and the shift register controls the conduction of the phase shift switching diode by the resistor unit and the bipolar junction transistor, and controls the conduction of the light emitting diode by the resistor unit.

[0022] In another embodiment of the above embodiment, the first length is greater than the second length.

[0023] As another example of the above embodiment, the other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase shift switching diode and the fourth radiating portion, the third radiating portion has a third length and the fourth radiating portion has a fourth length, the third length of the third radiating portion is equal to the first length of the first radiating portion and the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion, and the third length is greater than the fourth length such that the phase shift switching diode and the metal circuit are dumbbell shaped.

[0024] As another example of the above embodiment, the second radiating portion is annular and surrounds an outer periphery of the first radiating portion, and the first radiating portion is spaced apart from the second radiating portion by at least one interval.

[0025] As another example of the above embodiment, the first radiating portion surrounds the outer periphery of the phase shift switching diode and the other of the first metal member and the second metal member. [Brief description of the drawings]

[0026] [Figure 1] FIG. 1 is a schematic perspective view of a reconfigurable reflectarray structure according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic diagram of the phase-shifting switching diodes and metal circuitry of the reconfigurable reflectarray structure of FIG. 1. [Diagram 3] FIG. 2 is a schematic diagram of a high frequency choke of the reconfigurable reflectarray structure of FIG. 1. [Figure 4] FIG. 2 is a schematic diagram showing the relationship between phase and frequency of the reconfigurable reflectarray structure of FIG. 1. [Diagram 5] FIG. 2 is a schematic diagram showing the relationship between the reflection coefficient and frequency of the reconfigurable reflectarray structure of FIG. 1. [Figure 6A] FIG. 11 is a schematic diagram of a reconfigurable reflectarray structure according to a second embodiment of the present invention. [Figure 6B] FIG. 6B is a schematic diagram showing the relationship between phase and frequency of the reconfigurable reflectarray structure of FIG. 6A. [Figure 6C] FIG. 6B is a schematic diagram showing the relationship between the reflection coefficient and frequency of the reconfigurable reflectarray structure of FIG. 6A. [Figure 7A] FIG. 13 is a schematic perspective view of a reconfigurable reflect array structure according to a third embodiment of the present invention. [Figure 7B] FIG. 7B is a schematic plan view of the reconfigurable reflectarray structure of FIG. 7A. [Figure 7C] FIG. 7B is a schematic diagram showing the relationship between phase and frequency of the reconfigurable reflectarray structure of FIG. 7A. [Figure 7D] FIG. 7B is a schematic diagram showing the relationship between the reflection coefficient and frequency of the reconfigurable reflectarray structure of FIG. 7A. [Figure 8] FIG. 13 is a schematic diagram of a control circuit having a reconfigurable reflectarray structure according to a fourth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] Hereinafter, several embodiments of the present invention will be described with reference to the drawings. For the sake of clarity, many practical details are described in the following description. However, it should be understood that these practical details are not intended to limit the present invention. That is, in some embodiments of the present invention, these practical details are not necessary. In addition, in order to simplify the drawings, some well-known and commonly used structures and elements are simply and diagrammatically shown in the drawings, and overlapping elements may be represented by the same numbers.

[0028] In addition, in this specification, an element (or a unit or a module, etc.) being "connected" to another element may refer to the element being directly connected to the other element, or may refer to the element being indirectly connected to the other element, i.e., the other element is interposed between the element and the other element. When it is specified that an element is "directly connected" to another element, it indicates that the other element is not interposed between the element and the other element. The terms first, second, and third, etc. are merely for describing different elements and do not limit the elements themselves, so that the first element can be read as the second element. In addition, the combinations of elements / units / circuits in this specification are not ordinary or known combinations that are generally well known in this field, and whether the combination relationship can be easily understood by a person skilled in the art cannot be determined depending on whether the elements / units / circuits themselves are well known.

[0029] Please refer to FIG. 1. FIG. 1 shows a perspective schematic diagram of a reconfigurable reflect array (RRA) structure 100 according to a first embodiment of the present invention. The reconfigurable reflect array structure 100 is formed by stacking multiple layers, and includes a radiation layer ML1, a ground layer ML2, a high-frequency suppression layer ML3, and a DC bias layer ML4. The radiation layer ML1 includes a phase-shift switching (P-Intrinsic-N; PIN) diode 200 and a metal circuit 300. The phase-shift switching diode 200 and the metal circuit 300 are connected to each other. The metal circuit 300 includes a first metal member 310 and a second metal member 320. The first metal member 310 is coupled to one end of the phase-shift switching diode 200. The second metal member 320 is coupled to the other end of the phase-shift switching diode 200. The ground layer ML2 is connected to a ground voltage (GND). The radio frequency suppression layer ML3 includes a radio frequency choke 400, which is used to suppress radio frequency signals. The DC bias layer ML4 may be a fiberglass substrate (FR4). The power supply voltage Vc is transmitted to the phase shift switching diode 200 and the metal circuit 300 through the radio frequency choke 400 to generate a DC current I, which allows the reconfigurable reflectarray structure 100 to operate normally on 5G applications running in the n257 frequency band (26.5 GHz to 29.5 GHz). The multi-layer structure is, from top to bottom, a radiation layer ML1, a ground layer ML2, a radio frequency suppression layer ML3, and a DC bias layer ML4. Thus, the reconfigurable reflectarray structure 100 of the present invention has the characteristics of a wide band and a wide scanning range, and is simple in structure, low in cost, low in loss, and highly suitable for application in wireless mobile communications.

[0030] Please refer to Figures 1, 2 and 3. Figure 2 shows a schematic diagram of the phase-shift switching diode 200 and the metal circuit 300 of the reconfigurable reflectarray structure 100 of Figure 1, and Figure 3 shows a schematic diagram of the high frequency choke 400 of the reconfigurable reflectarray structure 100 of Figure 1. As shown in the drawings, the metal circuit 300 corresponds to the high frequency choke 400 from above and below, and the first metal member 310 of the metal circuit 300 is electrically connected to the high frequency choke 400.

[0031] The first metal member 310 (one of the first metal member 310 and the second metal member 320) of the metal circuit 300 includes a first radiating portion 312, a second radiating portion 314, a first contact portion 316, and a second contact portion 318. The first radiating portion 312 is located between the phase shift switching diode 200 and the second radiating portion 314, and the first radiating portion 312 has a first length a1. The first length a1 is the length of a portion of the first radiating portion 312 along the vertical axis direction D1, and the total length of the first radiating portion 312 along the vertical axis direction D1 is equal to twice the first length a1 plus the width c of the first contact portion 316 (i.e., the total length is 2×a1+c). In addition, the second radiating portion 314 has a second length b1 different from the first length a1. The second length b1 is the length of the portion of the second radiating portion 314 along the vertical axis direction D1, and the entire length of the second radiating portion 314 along the vertical axis direction D1 is equal to twice the second length b1 plus the width c of the second abutting portion 318 (i.e., the entire length is 2×b1+c). In this embodiment, the first length a1 is greater than the second length b1, and the entire length of the first radiating portion 312 is also greater than the entire length of the second radiating portion 314. Furthermore, the first abutting portion 316 is abutted between the phase shift switching diode 200 and the first radiating portion 312, and has a width c. The second abutting portion 318 is abutted between the first radiating portion 312 and the second radiating portion 314, and has a width c and a length d. The first abutting portion 316, the second abutting portion 318, and the phase shift switching diode 200 have the same width.

[0032] The second metal member 320 (the other of the first metal member 310 and the second metal member 320) of the metal circuit 300 includes a third radiating portion 322, a fourth radiating portion 324, a third contact portion 326, and a fourth contact portion 328. The third radiating portion 322 is located between the phase shift switching diode 200 and the fourth radiating portion 324, and the third radiating portion 322 has a third length a2. The third length a2 is the length of a portion of the third radiating portion 322 along the vertical axis direction D1, and the total length of the third radiating portion 322 along the vertical axis direction D1 is equal to twice the third length a2 plus the width c of the third contact portion 326 (i.e., the total length is 2×a2+c). In addition, the fourth radiating portion 324 has a fourth length b2 different from the third length a2. The fourth length b2 is the length of the portion of the fourth radiating portion 324 along the vertical axis direction D1, and the total length of the fourth radiating portion 324 along the vertical axis direction D1 is equal to twice the fourth length b2 plus the width c of the fourth abutting portion 328 (i.e., the total length is 2×b2+c). In this embodiment, the third length a2 of the third radiating portion 322 is equal to the first length a1 of the first radiating portion 312, and the fourth length b2 of the fourth radiating portion 324 is equal to the second length b1 of the second radiating portion 314. The third length a2 is greater than the fourth length b2, the overall length of the third radiating portion 322 is also greater than the overall length of the fourth radiating portion 324, and the first metal member 310 and the second metal member 320 are located at both ends of the phase shift switching diode 200, respectively, so that the phase shift switching diode 200 and the metal circuit 300 have a dumbbell shape, and the first metal member 310 and the second metal member 320 form a structure in which the outside is low and the inside is high. Furthermore, the third abutting portion 326 is abutted between the phase shift switching diode 200 and the third radiating portion 322, and has a width c. The fourth abutting portion 328 is abutted between the third radiating portion 322 and the fourth radiating portion 324, and has a width c and a length d. The third abutting portion 326, the fourth abutting portion 328, and the phase shift switching diode 200 have the same width. Moreover, the fourth radiating portion 324 is provided with a semicircular or arch-shaped protrusion 3202 protruding in the horizontal axis direction D2 away from the phase shift switching diode 200.In this embodiment, the convex portion 3202 is arcuate, the center of the circle corresponding to the convex portion 3202 is located in the fourth radiating portion 324, and the circle corresponding to the convex portion 3202 has a radius r, but the present invention is not limited thereto.

[0033] The high frequency choke 400 includes a line segment 410 and a radial stub 420. The line segment 410 corresponds to a quarter-wave line, and the line segment 410 is connected to the radial stub 420. The high frequency suppression layer ML3 further includes a ground metal member 402, which corresponds to the second metal member 320 of the radiation layer ML1. The high frequency choke 400 has a number of parameters including a radius r, line lengths f and g, a sector side length j, a sector width k, and a connection distance l.

[0034] Table 1 shows the numerical values ​​of each parameter in this embodiment, including the first length a1, the second length b1, the third length a2, the fourth length b2, the width c, the length d, the radius r, the line lengths f and g, the sector side length j, the sector width k, and the connection distance l, but the present invention is not limited to these numerical values. [Table 1]

[0035] As a result, the reconfigurable reflectarray structure 100 of the present invention uses a combination of the phase-shifting switching diodes 200 and the metal circuit 300 to form a dumbbell shape, and has the characteristics of wide band and wide scanning range, and is also simple in structure, low in cost, low in loss, and is very suitable for application in wireless mobile communications.

[0036] Please refer to FIG. 1, FIG. 4 and FIG. 5 together. FIG. 4 shows a schematic diagram of the relationship between the phase and frequency of the reconfigurable reflectarray structure 100 of FIG. 1, and FIG. 5 shows a schematic diagram of the relationship between the reflection coefficient (Return Loss) and frequency of the reconfigurable reflectarray structure 100 of FIG. 1. As shown in the drawings, "deg." represents the phase angle, "ON" represents that the phase shift switching diode 200 is in an on state and can be regarded as a resistance, and "OFF" represents that the phase shift switching diode 200 is in an off state and can be regarded as a capacitance. The bandwidth of the reconfigurable reflectarray structure 100 is 19%, covering 24.9 GHz to 30.1 GHz, meeting the specified bandwidth requirement. In addition, a simulation test was performed on 1600 (40×40) reconfigurable reflectarray structures 100, and the peak simulation gain was 29.4 dB, and the realizable beam scanning range was ±60°. The reconfigurable reflectarray structure 100 in FIG. 1 can be regarded as a reconfigurable reflectarray unit, and a plurality of reconfigurable reflectarray units can be combined to form a one-dimensional array or a two-dimensional array, the size of which can be determined as needed.

[0037] Please refer to Figure 1, Figure 6A, Figure 6B and Figure 6C together. Figure 6A shows a schematic diagram of a reconfigurable reflectarray structure 100a according to a second embodiment of the present invention (only the emitting layer is shown), Figure 6B shows a schematic diagram of the phase vs. frequency relationship of the reconfigurable reflectarray structure 100a of Figure 6A, and Figure 6C shows a schematic diagram of the reflection coefficient vs. frequency relationship of the reconfigurable reflectarray structure 100a of Figure 6A. As shown in the drawings, the reconfigurable reflectarray structure 100a includes a phase-shift switching diode 200a and a metal circuit 300a. The phase-shift switching diode 200a is the same as the phase-shift switching diode 200 of Figure 1. The metal circuit 300a includes a first metal member 310a and a second metal member 320a. The first metal member 310a is electrically connected to one end of the phase shift switching diode 200a, and the second metal member 320a is electrically connected to the other end of the phase shift switching diode 200a. In this embodiment, the first metal member 310a and the second metal member 320a are electrically connected to the phase shift switching diode 200a by wire bonding, but the present invention is not limited thereto. The first metal member 310a (i.e., one of the first metal member 310a and the second metal member 320a) includes a first radiating portion 312a and a second radiating portion 314a. The first radiating portion 312a is located between the phase shift switching diode 200a and the second radiating portion 314a, the first radiating portion 312a has a first length a1 and is annular, and the second radiating portion 314a has a second length b1 different from the first length a1.

[0038] Specifically, the first length a1 is smaller than the second length b1. The second radiating portion 314a is annularly surrounding the outer periphery of the first radiating portion 312a, and the first radiating portion 312a is spaced from the second radiating portion 314a by at least one interval (e.g., intervals d1 and d2). The first radiating portion 312a surrounds the outer periphery of the phase shift switching diode 200a, in other words, the first radiating portion 312a surrounds the outer periphery of the phase shift switching diode 200a and the second metal member 320a (i.e., the other of the first metal member 310a and the second metal member 320a). The first radiating portion 312a may be rectangular, circular, or elliptical, and the second radiating portion 314a may be rectangular or arc-shaped. In this embodiment, the first radiating portion 312a and the second radiating portion 314a are both rectangular, and the total length of the first radiating portion 312a is smaller than the total length of the second radiating portion 314a. Thus, the reconfigurable reflectarray structure 100a of the present invention uses the combination of the phase-shift switching diode 200a and the metal circuit 300a to form a double ring, and has the characteristics of a wide band and a wide scanning range, and is simple in structure, low in cost, low in loss, and is very suitable for the application of wireless mobile communications.

[0039] Please refer to Figures 6A, 7A, 7B, 7C and 7D. Figure 7A shows a perspective view of a reconfigurable reflectarray structure 100b according to a third embodiment of the present invention, Figure 7B shows a plan view of the reconfigurable reflectarray structure 100b of Figure 7A, Figure 7C shows a phase-frequency relationship diagram of the reconfigurable reflectarray structure 100b of Figure 7A, and Figure 7D shows a reflection coefficient-frequency relationship diagram of the reconfigurable reflectarray structure 100b of Figure 7A. As shown in the drawings, the reconfigurable reflectarray structure 100b includes a phase-shift switching diode 200b, a metal circuit 300b and a colloid 500. The metal circuit 300b includes a first metal member 310b and a second metal member 320b. The first metal member 310b includes a first radiating portion 312b and a second radiating portion 314b. The structure of the phase shift switching diode 200b and the metal circuit 300b is the same as that of the phase shift switching diode 200a and the metal circuit 300a in FIG. 6A, and the details thereof will not be described repeatedly. The colloid 500 may be black and is located above the phase shift switching diode 200b. The colloid 500 covers a part of the phase shift switching diode 200b and the metal circuit 300b to protect the contact points (welding wires and welding points) between the phase shift switching diode 200b and the metal circuit 300b.

[0040] Please refer to Figures 1, 6A, 7A and 8 together. Figure 8 shows a schematic diagram of a control circuit 600 having a reconfigurable reflectarray structure according to a fourth embodiment of the present invention. The control circuit 600 having a reconfigurable reflectarray structure includes a plurality of reconfigurable reflectarray structures 610 and a control unit 620, each of which may be the above-mentioned reconfigurable reflectarray structures 100, 100a, 100b, and each of which includes a phase-shift switching diode 200c, and the details of which will not be described repeatedly. The control unit 620 can be used to control the plurality of reconfigurable reflectarray structures 610.

[0041] A control unit 620 is connected to each reconfigurable reflectarray structure 610 and is used to control the conduction of the phase-shift switching diode 200c. In particular, the control unit 620 includes a light emitting diode (LED) 622, a bipolar junction transistor (BJT) 624, a resistor unit 626, a shift register 628, a power supply 602, and a low dropout regulator (LDO) 604. The conduction (light emission) of the light emitting diode 622 corresponds to the conduction of the phase-shift switching diode 200c of the reconfigurable reflectarray structure 610. The bipolar junction transistor 624 is connected to the reconfigurable reflectarray structure 610. The bipolar junction transistor 624 includes an emitter, a base, and a collector, and the emitter, base, and collector are respectively connected to the reconfigurable reflectarray structure 610, the resistor unit 626, and the low-dropout regulator 604, and the voltage of the emitter can correspond to the supply voltage Vc of FIG. 1. The resistor unit 626 is connected to the light-emitting diode 622 and the bipolar junction transistor 624, and the resistor unit 626 includes a plurality of resistors. The shift register 628 is connected to the resistor unit 626. The shift register 628 controls the conduction of the phase-shift switching diode 200c by the resistor unit 626 and the bipolar junction transistor 624, and controls the conduction of the light-emitting diode 622 by the resistor unit 626. The power supply 602 is coupled to a shift register 628 and to a low dropout regulator 604 , which is coupled to the bipolar junction transistor 624 to provide a desired voltage to the bipolar junction transistor 624 .In one embodiment, the power supply 602 can supply 5V and 3.3V to the shift register 628 and the low dropout regulator 604, respectively, and the low dropout regulator 604 can supply 1.5V to the bipolar junction transistor 624, but the present invention is not limited thereto. Thus, the control circuit 600 having the reconfigurable reflectarray structure of the present invention is integrated using easily obtainable elements, and has the characteristics of stable bias voltage, DC link detection, and low power consumption.

[0042] In another embodiment, the control unit of the control circuit having a reconfigurable reflectarray structure can be realized by combining a microcontroller unit (MCU) with light emitting diodes, bipolar junction transistors, a resistor unit, a shift register, and a power supply.

[0043] As can be seen from the above embodiment, the present invention has the following advantages: First, the reconfigurable reflectarray structure uses a combination of phase-shift switching diodes and metal circuits to form a dumbbell shape or double ring shape, which has the characteristics of wide band and wide scanning range, simple structure, low cost and low loss, and can greatly improve the signal quality of the millimeter-wave wireless communication network, which is very suitable for wireless mobile communication applications. Second, the control circuit with the reconfigurable reflectarray structure is integrated using easily obtainable elements, and has the characteristics of stable bias voltage, DC link detection and low power consumption.

[0044] The present invention has been disclosed in the above embodiments, but the above embodiments are not intended to limit the present invention. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be limited by the scope of the patent application attached later. [Explanation of symbols]

[0045] 100, 100a, 100b, 610: Reconfigurable reflectarray structure 200, 200a, 200b, 200c: Phase shift switching diodes 300, 300a, 300b: Metal circuit 310, 310a, 310b: first metal member 312, 312a, 312b: 1st radiation part 314, 314a, 314b: 2nd radiation part 316: 1st contact part 318:Second contact part 320, 320a, 320b: second metal member 3202: Convex 322: Third radiation section 324: 4th radiation part 326: Third contact part 328: 4th contact part 400: High frequency choke 402: Grounded metal member 410: Line segment 420: Radial stub 500: Colloid 600: Control circuit having a reconfigurable reflectarray structure 602: Power supply 604: Low Dropout Regulator 620: Control unit 622: Light emitting diode 624: Bipolar junction transistor 626: Resistance unit 628: Shift register a1: First length a2: 3rd length b1: Second length b2: 4th length c: Width d:Length d1, d2: Interval D1: Vertical axis D2: Horizontal axis f, g: line length I: Direct current j: fan side length k: sector width l: Connection distance ML1: Radiation layer ML2: Ground layer ML3: High frequency suppression layer ML4: DC bias layer r: radius Vc: Power supply voltage

Claims

1. A phase-shift switching (P-Intrinsic-N; PIN) diode; a metal circuit including a first metal member coupled to one end of the phase shift switching diode and a second metal member coupled to the other end of the phase shift switching diode; Equipped with One of the first metal member and the second metal member includes a first radiating portion and a second radiating portion, the first radiating portion is located between the phase shift switching diode and the second radiating portion and has a first length, and the second radiating portion has a second length different from the first length. A reconfigurable reflect array (RRA) structure.

2. The reconfigurable reflectarray structure of claim 1 , wherein the first length is greater than the second length.

3. 2. The reconfigurable reflectarray structure according to claim 1, wherein the other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase-shift switching diode and the fourth radiating portion and has a third length, and the fourth radiating portion has a fourth length different from the third length.

4. 4. The reconfigurable reflectarray structure of claim 3, wherein the third length of the third radiating portion is equal to the first length of the first radiating portion, and the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion.

5. The reconfigurable reflectarray structure of claim 4 , wherein the third length is greater than the fourth length such that the phase-shifting switching diode and the metal circuit are dumbbell-shaped.

6. The reconfigurable reflect array structure according to claim 3 , wherein the fourth radiating portion has a semicircular or arch-shaped protrusion protruding from the fourth radiating portion in a direction away from the phase shift switching diode.

7. A phase-shift switching (P-Intrinsic-N; PIN) diode; a metal circuit including a first metal member electrically connected to one end of the phase shift switching diode and a second metal member electrically connected to the other end of the phase shift switching diode; Equipped with One of the first metal member and the second metal member includes a first radiating portion and a second radiating portion, the first radiating portion is located between the phase-shift switching diode and the second radiating portion, has a first length and is annular, and the second radiating portion has a second length different from the first length. A reconfigurable reflect array (RRA) structure.

8. The reconfigurable reflectarray structure of claim 7 , wherein the first length is smaller than the second length.

9. The reconfigurable reflectarray structure according to claim 7 , wherein the second radiating portion is annularly surrounding an outer periphery of the first radiating portion, and the first radiating portion is spaced apart from the second radiating portion by at least one interval.

10. The reconfigurable reflectarray structure according to claim 7 , wherein the first radiating portion surrounds an outer periphery of the phase-shift switching diode and the other of the first metal member and the second metal member.

11. The reconfigurable reflectarray structure of claim 7 , further comprising a colloid covering the phase-shifting switching diodes and a portion of the metal circuitry.

12. The reconfigurable reflect array structure according to claim 7 , wherein the first radiating portion has a rectangular, circular or elliptical shape, and the second radiating portion has a rectangular or arc shape.

13. A phase-shift switching (P-Intrinsic-N; PIN) diode; a first metal member coupled to one end of the phase shift switching diode and a second metal member coupled to the other end of the phase shift switching diode, one of the first metal member and the second metal member including a first radiating portion and a second radiating portion, the first radiating portion being located between the phase shift switching diode and the second radiating portion, the first radiating portion having a first length, and the second radiating portion having a second length different from the first length; a control unit coupled to the reconfigurable reflectarray structure for controlling conduction of the phase-shifting switching diodes; A control circuit having a reconfigurable reflect array (RRA) structure comprising:

14. The control unit A light emitting diode (LED); a bipolar junction transistor (BJT) coupled to the reconfigurable reflectarray structure; a resistor unit coupled to the light emitting diode and the bipolar junction transistor; a shift register connected to the resistor unit; Including, 14. The control circuit having a reconfigurable reflectarray structure according to claim 13, wherein the shift register controls the conduction of the phase-shift switching diode by the resistor unit and the bipolar junction transistor, and controls the conduction of the light-emitting diode by the resistor unit.

15. The control circuit having a reconfigurable reflectarray structure according to claim 13 , wherein the first length is greater than the second length.

16. 14. The control circuit with a reconfigurable reflectarray structure according to claim 13, wherein the other of the first metal member and the second metal member includes a third radiating portion and a fourth radiating portion, the third radiating portion is located between the phase shift switching diode and the fourth radiating portion and has a third length, the fourth radiating portion has a fourth length, the third length of the third radiating portion is equal to the first length of the first radiating portion, the fourth length of the fourth radiating portion is equal to the second length of the second radiating portion, and the third length is greater than the fourth length such that the phase shift switching diode and the metal circuit have a dumbbell shape.

17. 14. The control circuit having a reconfigurable reflectarray structure according to claim 13, wherein the second radiating portion is annularly surrounding an outer periphery of the first radiating portion, and the first radiating portion is spaced apart from the second radiating portion by at least one interval.

18. The control circuit having a reconfigurable reflectarray structure according to claim 13 , wherein the first radiating portion surrounds an outer periphery of the phase-shift switching diode and the other of the first metal member and the second metal member.

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