Substrate processing method, manufacturing method and substrate processing apparatus

Abstract

To provide a method for processing substrates.SOLUTION: A substrate processing method includes: a substrate loading step of loading a substrate into a processing space provided by a body; a heating step of placing the substrate, which has been loaded into the processing space, on a heating chuck and heating the substrate; and an atmosphere changing step of changing an atmosphere of the processing space. The atmosphere changing step includes: a gas discharging step of injecting atmosphere changing gas in a state where the substrate is located closer to a baffle than in the heating step, in which the baffle is provided on a top side of the heating chuck to face the heating chuck and injects the atmosphere changing gas; and a substrate lowering step of lowering the substrate onto the heating chuck while maintaining the injection of the atmosphere changing gas.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The present invention relates to a substrate processing method, a manufacturing method, and a substrate processing apparatus. [Background technology]

[0002] In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, ion implantation, etc. Among these processes, the photography process may include a coating process in which a photoresist solution is applied to a substrate such as a wafer to form a photosensitive film, an exposure process in which light is irradiated onto the photosensitive film to change the properties of the portions corresponding to the pattern, and a development process in which the portions irradiated with light or the portions not irradiated with light are selectively removed.

[0003] The photolithography process may also include a bake process in which the substrate is heated to stabilize the photosensitive film formed on the substrate. The bake process may be performed before or after the exposure process and after the development process. A soft bake performed before the exposure process removes the solvent contained in the photosensitive film. A post-exposure bake (PEB) performed after the exposure process flattens the photosensitive film and reduces standing waves on the surface of the photosensitive film. A hard bake performed after the development process removes the solvent and developer residues in the photosensitive film formed on the substrate. The bake process is performed in a bake chamber that provides a space in which the substrate is processed.

[0004] 1 is a flow chart of a typical bake process. In a typical bake process, a substrate is placed in a bake chamber (S1), heated in the bake chamber (S2), and removed after heating is complete (S3).

[0005] Recently, inorganic photoresists are used as a photosensitive solution supplied to a substrate when an exposure process is performed using extreme ultraviolet photolithography technology. Such inorganic photoresists are more affected by the atmosphere in the bake chamber during the bake process than general photoresists. Therefore, when using inorganic photoresists, a technology for switching the atmosphere in the bake chamber in which the bake process is performed, a technology for quickly switching the atmosphere, and a technology for uniformly processing the substrate are required. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Publication No. 10-2021-0011347 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a substrate processing method, a manufacturing method, and a substrate processing apparatus capable of effectively processing a substrate.

[0008] Another object of the present invention is to provide a substrate processing method, a manufacturing method, and a substrate processing apparatus that can quickly change the atmosphere of a processing space in which a baking process is performed during a baking process.

[0009] Another object of the present invention is to provide a substrate processing method, a manufacturing method, and a substrate processing apparatus that can minimize processing deviations between different regions of a substrate when replacing the atmosphere in a processing space where a bake process is performed.

[0010] The object of the present invention is not limited thereto, and other objects not mentioned herein will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0011] The present invention provides a method for processing a substrate, the method including: a substrate loading step of loading the substrate into a processing space provided by a body; a heating step of placing the substrate loaded into the processing space on a heating chuck and heating the substrate; and an atmosphere changing step of changing an atmosphere in the processing space, the atmosphere changing step including a gas discharge step of injecting the atmosphere change gas into a baffle disposed above the heating chuck and facing the heating chuck, the baffle being disposed closer to the substrate than in the heating step, and a substrate lowering step of lowering the substrate onto the heating chuck while maintaining the injection of the atmosphere change gas.

[0012] According to an embodiment, the substrate lowering step may lower the substrate at a speed at which a concentration of the atmosphere switching gas in an upper region of the substrate is maintained at or above a set concentration.

[0013] According to one embodiment, in the substrate lowering step, when the atmosphere change gas is supplied at a first flow rate, the substrate may be lowered at a first speed, and when the atmosphere change gas is supplied at a second flow rate greater than the first flow rate, the substrate may be lowered at a second speed greater than the first speed.

[0014] According to an embodiment, the atmosphere changing step may further include a substrate raising step of raising the substrate so that a gap between the substrate and the baffle becomes a set gap.

[0015] According to one embodiment, the set interval may be a selected interval in the range of 1 mm to 5 mm.

[0016] According to an embodiment, the atmosphere change gas may be any one selected from the group consisting of humidified air, carbon dioxide, and nitrogen.

[0017] According to an embodiment, the method may further include a substrate unloading step of unloading the substrate from the processing space, and the atmosphere changing step may be performed a plurality of times between the substrate loading step and the substrate unloading step.

[0018] According to an embodiment, the method may further include a substrate unloading step of unloading the substrate from the processing space, and the heating step may be performed a plurality of times between the substrate loading step and the substrate unloading step.

[0019] According to one embodiment, the heating step includes a first heating step performed before the atmosphere change step and a second heating step performed after the atmosphere change step, and the first heating step and the second heating step may have different temperatures for heating the substrate.

[0020] According to an embodiment, the baking process including the heating step and the atmosphere exchange step may be performed after an exposure process of irradiating light to the photoresist film coated on the substrate.

[0021] According to an embodiment, the photosensitive film may be formed of an inorganic photoresist.

[0022] The present invention also provides a manufacturing method, which includes an exposure process of irradiating a photosensitive film formed on a wafer with light, a bake process of heating the wafer after the exposure process, and a cooling process of cooling the wafer after the bake process, and the bake process may include an insertion step of inserting the wafer into a processing space provided by a body, a heating step of placing the wafer inserted into the processing space on a heating chuck and heating the wafer, and an atmosphere changing step of changing an atmosphere in the processing space while the processing space is closed.

[0023] According to one embodiment, the atmosphere changing step may include a gas discharge step of injecting the atmosphere changing gas into a baffle that is disposed above the heating chuck and facing the heating chuck, the baffle injecting the atmosphere changing gas while the wafer is positioned closer to the baffle than in the heating step.

[0024] According to an embodiment, the atmosphere change step may include a lowering step of lowering the wafer onto the heated chuck while maintaining the injection of the atmosphere change gas.

[0025] According to an embodiment, the lowering step may lower the wafer at a speed that maintains a concentration of the atmosphere conversion gas in a region between the wafer and the baffle at or above a set concentration.

[0026] The present invention also provides an apparatus for processing a substrate, the substrate processing apparatus including a body providing a processing space, a heating chuck supporting and heating the substrate in the processing space, a gas supplying unit supplying a gas to the processing space, a baffle located above the heating chuck and distributing the gas supplied by the gas supplying unit, and a controller, the heating chuck including a heating plate provided with a heater for heating the substrate, and a lift pin module for lifting and lowering the substrate, the controller controlling the lift pin module and the gas supplying unit such that the gas supplying unit discharges an atmosphere switching gas into the processing space to switch an atmosphere in the processing space while the lift pin module supports the substrate such that a gap between the substrate and the baffle is a set gap.

[0027] According to one embodiment, the controller lowers the substrate in a direction closer to the heated chuck while maintaining the discharge of the atmospheric conversion gas, and the descent speed of the substrate can be set to a speed at which the concentration of the atmospheric conversion gas in the space between the substrate and the baffle is maintained above a set concentration.

[0028] According to one embodiment, the set interval may be a selected interval in the range of 1 mm to 5 mm.

[0029] According to an embodiment, the gas supply unit may include one or more of a first gas supply source that supplies humidified air, a second gas supply source that supplies carbon dioxide, and a third gas supply source that supplies an inert gas.

[0030] According to one embodiment, the body includes an upper body and a lower body that is combined with the upper body to define the processing space, the apparatus includes a lifting device that raises and lowers the upper body to open and close the processing space, and the controller can control the lifting device and the gas supply unit so that the discharge of the atmosphere conversion gas is performed in a state where the processing space is closed. Effect of the Invention

[0031] According to an embodiment of the present invention, it is possible to adjust the uniformity of a film coated on a substrate.

[0032] Furthermore, according to an embodiment of the present invention, gas can be uniformly supplied onto the substrate during the heating process.

[0033] Furthermore, according to an embodiment of the present invention, the gas supplied onto the substrate during the heating process can be uniformly exhausted.

[0034] Furthermore, according to an embodiment of the present invention, an increase in the area occupied by a heating unit that performs a heating process on a substrate can be minimized.

[0035] The effects of the present invention are not limited to the effects described above, but should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description of the present invention or the claims. [Brief description of the drawings]

[0036] [Figure 1] 2 is a flow chart of a typical baking process. [Diagram 2] 1 is a perspective view illustrating a substrate processing apparatus according to an embodiment of the present invention; [Diagram 3] 3 is a cross-sectional view of the substrate processing apparatus showing the coating block or the developing block of FIG. 2. [Figure 4] FIG. 3 is a plan view of the substrate processing apparatus of FIG. 2. [Diagram 5] 5 is a diagram showing an example of a hand of the transport robot of FIG. 4. [Figure 6] FIG. 5 is a plan view illustrating an example of the heat treatment chamber of FIG. 4. [Figure 7] FIG. 7 is a front view of the heat treatment chamber of FIG. 6. [Figure 8] FIG. 8 is a cross-sectional view showing the heating unit of FIG. [Figure 9] 2 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. [Figure 10] 10 is a flow chart showing steps included in the baking process of FIG. 9; [Figure 11] 11 is a diagram showing the appearance of a heating unit performing step S10 of FIG. 10. [Figure 12] 11 is a diagram showing a heating unit performing step S20 of FIG. 10; [Figure 13] 11 is a diagram showing a heating unit performing step S30 of FIG. 10; [Figure 14] 11 is a diagram showing a heating unit performing step S40 of FIG. 10; [Figure 15] 11 is a diagram showing a heating unit performing step S50 of FIG. 10; [Figure 16] 11 is a diagram showing a heating unit performing step S60 of FIG. 10; [Figure 17] 1 is a graph showing the time required for changing the atmosphere for each region of a substrate, and is a graph showing an example of the present invention and a comparative example. [Figure 18] 4 is a graph showing the time it takes for the concentration of the atmosphere switching gas in the upper region of the substrate to reach a set concentration, showing an example of the present invention and a comparative example; [Figure 19] 4 is a graph showing standard deviations of the concentration of an atmosphere switching gas in each region of a substrate in an upper region of the substrate, illustrating an embodiment of the present invention and a comparative example; [Figure 20] 4 is a flow chart illustrating steps included in a baking process according to another embodiment of the present invention. [Figure 21] 4 is a flow chart illustrating steps included in a baking process according to another embodiment of the present invention. [Figure 22] 13 is a view showing a heating unit according to another embodiment of the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0037] Various features and advantages of the non-limiting embodiments of the present disclosure may become more apparent upon consideration of the detailed description in conjunction with the accompanying drawings, in which: The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to be considered as drawn to scale unless expressly noted above. Various dimensions of the drawings may have been exaggerated for clarity.

[0038] The exemplary embodiments will be described more fully with reference to the accompanying drawings. The exemplary embodiments are provided so that the disclosure will be thorough and will fully convey the scope of the disclosure to those skilled in the art. In order to provide a thorough understanding of the embodiments of the disclosure, a number of specific details, such as examples of specific components, devices and methods, are presented. It will be apparent to those skilled in the art that specific details need not be utilized, and that the exemplary embodiments can be embodied in many different forms, and both should not be interpreted as limiting the scope of the disclosure. In some exemplary embodiments, known processes, known device structures and known technologies are not described in detail.

[0039] The terms used herein are merely for the purpose of describing certain exemplary embodiments, and are not intended to limit the exemplary embodiments. As used herein, singular terms or terms without a singular or plural are intended to include the plural unless the context clearly indicates otherwise. The terms "comprise", "include", "comprise", "comprise", and "have" are open-ended and therefore specify the presence of stated features, structures, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, structures, steps, operations, elements, components, and / or groups thereof. Method steps, processes, and operations herein should not be construed as necessarily being performed in the particular order discussed or described, unless the order of performing is specified. Also, additional or alternative steps may be selected.

[0040] When an element or layer is referred to as "on," "connected," "bonded," "adhered," "adjacent," or "covering" another element or layer, this means that it is directly on, connected to, bonded to, attached to, abuts, or covers the other element or layer, or intermediate elements or layers may be present. Conversely, when an element is referred to as "directly on," "directly connected to," or "directly bonded to" a different element or layer, it will be understood that no intermediate elements or layers are present. Like reference characters refer to like elements throughout the specification. As used herein, the term "and / or" includes all combinations and subcombinations of one or more of the listed items.

[0041] Although terms such as first, second, and third may be used to describe various elements, regions, layers, and / or sections in the present invention, it should be understood that the elements, regions, layers, and / or sections should not be limited by these terms. These terms are used only to distinguish an element, region, layer, or section from a different element, region, layer, or section. Thus, a first element, first region, first layer, or first section discussed below may be referred to as a second element, second region, second layer, or second section without departing from the teachings of the exemplary embodiments.

[0042] Spatially relative terms (e.g., "below," "bottom," "lower," "over," "top," etc.) may be used for convenience of description to describe the relationship of one element or feature to another element(s) or feature(s) as illustrated in the drawings. It should be understood that the spatially relative terms are intended to include other orientations of the device during use or operation, not just the orientation shown in the drawings. For example, if the device in the drawings were turned over, elements described as "below" or "at the bottom" of other elements or features would be oriented "over" the other elements or features. Thus, the term "below" can include both above and below orientations. The device may be oriented differently (rotated 90 degrees or in other orientations) and the spatially relative descriptions used herein should be interpreted accordingly.

[0043] When using the terms "identical" or "same" in the description of the embodiments, it should be understood that there may be some imprecision. Thus, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is equal to the other element or value within manufacturing or operating tolerances (e.g., ±10%).

[0044] When the words "approximately" or "substantially" are used herein in connection with numerical values, the numerical values ​​should be understood to include manufacturing or operating errors (e.g., ±10%) of the referenced numerical values. Also, when the words "generally" and "substantially" are used in connection with geometric features, it should be understood that precise geometric features are not required, but latitude to the features is within the disclosure.

[0045] Unless otherwise defined, all terms (including technical and scientific terms) used in the present application have the same meaning as commonly understood by a person of ordinary skill in the art to which the exemplary embodiments belong. Furthermore, terms, including commonly used predefined terms, should be interpreted to have a meaning consistent with their meaning in the context of the relevant art, and unless expressly defined above in the present application, they should not be interpreted in an ideal or overly formal sense.

[0046] FIG. 2 is a perspective view showing a schematic configuration of a substrate processing apparatus according to one embodiment of the present invention, FIG. 3 is a cross-sectional view of the substrate processing apparatus showing the coating block or developing block of FIG. 2, and FIG. 4 is a plan view of the substrate processing apparatus of FIG. 2.

[0047] 2 to 4, the substrate processing apparatus 10 includes an index module 20, a treating module 30, an interface module 50, and a controller 60. According to an embodiment, the index module 20, the treating module 30, and the interface module 50 are sequentially arranged in a row. Hereinafter, a direction in which the index module 20, the treating module 30, and the interface module 50 are arranged is referred to as a first direction (X), a direction perpendicular to the first direction (X) when viewed from above is referred to as a second direction (Y), and a direction perpendicular to both the first direction (X) and the second direction (Y) is referred to as a third direction (Z).

[0048] The index module 20 transports the substrates (W) from a container (C) containing the substrates (W) to the processing module 30 and stores the processed substrates (W) in the container (C). The length direction of the index module 20 is provided in the second direction (Y). The index module 20 has a load port 22 and an index frame 24. The load port 22 is located on the opposite side of the processing module 30 with respect to the index frame 24. The container (C) containing the substrates (W) is placed on the load port 22. A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be arranged along the second direction (Y).

[0049] A sealed container (C) such as a Front Open Unified Pod (FOUP) may be used as the container (C). The container (C) may be placed on the load port 22 by a transport means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle, or by a worker.

[0050] The index frame 24 has an index chamber 2100. An index robot 2200 is provided inside the index chamber 2100. A guide rail 2300 is provided inside the index chamber 2100, with the length direction provided in a second direction (Y), and the index robot 2200 may be provided to be movable on the guide rail 2300. The index robot 2200 includes a hand 2220 on which a substrate (W) is placed, and the hand 2220 may be provided to be capable of forward and backward movement, rotation about an axis in a third direction (Z), and movement along the third direction (Z).

[0051] The processing module 30 performs a coating process and a developing process on a substrate W. The processing module 30 includes a coating block 30a and a developing block 30b.

[0052] The coating block 30a performs a coating process on the substrate (W), and the developing block 30b performs a developing process on the substrate (W). A plurality of coating blocks 30a are provided, and these are provided so as to be stacked on top of each other. A plurality of developing blocks 30b are provided, and these developing blocks 30b are provided so as to be stacked on top of each other. According to the embodiment of FIG. 2, two coating blocks 30a are provided, and two developing blocks 30b are provided. The coating blocks 30a can be disposed below the developing blocks 30b. According to one example, the two coating blocks 30a can be provided with the same structure to perform the same process to each other. Also, the two developing blocks 30b can be provided with the same structure to perform the same process to each other.

[0053] The coating block 30 a can include a thermal treatment chamber 3200 , a transfer chamber 3400 , a liquid treatment chamber 3600 and a buffer chamber 3800 .

[0054] The thermal treatment chamber 3200 is configured to perform a cooling process or a baking process on the substrate (W). A plurality of thermal treatment chambers 3200 are provided. The thermal treatment chambers 3200 are arranged in a row along a first direction (X). Some of the thermal treatment chambers 3200 may be arranged to be stacked on top of each other. The thermal treatment chambers 3200 are located on one side of the transfer chamber 3400. The details of the thermal treatment chambers 3200 will be described later.

[0055] The transfer chamber 3400 may be configured to transfer a substrate (W) between the thermal treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800 within the coating block 30a.

[0056] The transfer chamber 3400 is provided with its length direction parallel to the first direction (X). The transfer chamber 3400 is provided with a transfer robot 3420. The transfer robot 3420 transfers a substrate between the thermal treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800. According to an example, the transfer robot 3420 has a hand 3422 on which a substrate (W) is placed, and the hand 3422 may be provided to be capable of moving forward and backward, rotating about an axis of the third direction (Z), and moving along the third direction (Z). A guide rail 3430 is provided in the transfer chamber 3400 with its length direction parallel to the first direction (X), and the transfer robot 3420 may be provided to be capable of moving on the guide rail 3430.

[0057] FIG. 5 is a diagram showing an example of a hand of the transfer robot of FIG. 4. Referring to FIG. 5, the hand 3422 has a base 3428 and a support protrusion 3429. The base 3428 may have a shape in which a part of the circumference is cut away from an annular ring. The base 3428 has an inner diameter larger than the diameter of the substrate (W). The support protrusion 3429 extends inward from the base 3428. A plurality of support protrusions 3429 are provided to support the edge region of the substrate (W). In one example, four support protrusions 3429 may be provided at equal intervals.

[0058] 2 to 4, a plurality of liquid treatment chambers 3600 are provided. Some of the liquid treatment chambers 3600 may be provided stacked on top of each other. The liquid treatment chambers 3600 are disposed on the other side of the transfer chamber 3400. The liquid treatment chambers 3600 are arranged side by side along the first direction (X). Some of the liquid treatment chambers 3600 are provided adjacent to the index module 20. Hereinafter, these liquid treatment chambers will be referred to as front liquid treatment chambers 3602 (front liquid treating chambers). Others of the liquid treatment chambers 3600 are provided adjacent to the interface module 50. Hereinafter, these liquid treatment chambers will be referred to as rear heat treating chambers 3604 (rear heat treating chambers).

[0059] The front end liquid treatment chamber 3602 applies a first liquid onto the substrate (W), and the rear end liquid treatment chamber 3604 applies a second liquid onto the substrate (W). The first liquid and the second liquid may be different types of liquids. According to one embodiment, the first liquid is an anti-reflective coating, and the second liquid is an inorganic photoresist. The inorganic photoresist may be applied onto the substrate (W) on which the anti-reflective coating is applied. Alternatively, the first liquid may be an inorganic photoresist, and the second liquid may be an anti-reflective coating. In this case, the anti-reflective coating may be applied onto the substrate (W) on which the inorganic photoresist is applied. Alternatively, the first liquid and the second liquid may be the same type of liquid, and they may all be inorganic photoresists.

[0060] A plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400. Hereinafter, these buffer chambers are referred to as front buffers 3802. A plurality of front buffers 3802 are provided and positioned so as to be stacked on top of each other in the vertical direction. Others of the buffer chambers 3802, 3804 are disposed between the transfer chamber 3400 and the interface module 50. Hereinafter, these buffer chambers are referred to as rear buffers 3804. A plurality of rear buffers 3804 are provided and positioned so as to be stacked on top of each other in the vertical direction. The front buffers 3802 and rear buffers 3804 temporarily store a plurality of substrates (W).

[0061] The front-end buffer robot 3812 is configured to transport a substrate (W) between the front-end buffers 3802. The rear-end buffer robot 3814 is configured to transport a substrate (W) between the rear-end buffers 3804. The front-end buffer robot 3812 includes a hand that is installed on the side of the front-end buffer 3802 and configured to be movable along the third direction (Z). Similarly, the rear-end buffer robot 3814 also includes a hand that is installed on the side of the rear-end buffer 3804 and configured to be movable along the third direction (Z).

[0062] The substrate (W) stored in the front end buffer 3802 is carried in or out by the index robot 2200 and the transport robot 3420. The substrate (W) stored in the rear end buffer 3804 is carried in or out by the transport robot 3420 and the first robot 5602.

[0063] The developing block 30b has a thermal treatment chamber 3200, a transfer chamber 3400, and a liquid treatment chamber 3600. The thermal treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the developing block 30b are generally similar in structure and arrangement to the thermal treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the coating block 30a, so a description thereof will be omitted. However, in the developing block 30b, all the liquid treatment chambers 3600 are equally provided as the developing chamber 3600 which supplies a developer to develop the substrate.

[0064] The interface module 50 connects the processing module 30 to an external exposure device 70. The interface module 50 includes an interface frame 5100, an additional process chamber 5200, an interface buffer 5400, and a transport member 5600. The exposure device 70 may be a device that performs an exposure process by irradiating EUV onto a substrate (W) on which a photosensitive film is formed.

[0065] A fan filter unit for forming a downward airflow inside may be provided at the upper end of the interface frame 5100. The additional process chamber 5200, the interface buffer 5400, and the conveying member 5600 are disposed inside the interface frame 5100.

[0066] The additional process chamber 5200 may perform a predetermined additional process on the substrate W that has been processed in the coating block 30a before the substrate W is transported to the exposure device 70. Alternatively, the additional process chamber 5200 may perform a predetermined additional process on the substrate W that has been processed in the exposure device 70 before the substrate W is transported to the development block 30b.

[0067] According to one example, the additional process may be an edge exposure process for exposing an edge region of the substrate (W), or a top surface cleaning process for cleaning the top surface of the substrate (W), or a bottom surface cleaning process for cleaning the bottom surface of the substrate (W).

[0068] A plurality of additional process chambers 5200 may be provided, stacked on top of each other. All of the additional process chambers 5200 may be provided to perform the same process. Alternatively, some of the additional process chambers 5200 may be provided to perform different processes.

[0069] The interface buffer 5400 provides a space for the substrate (W) to temporarily stay during transportation between the coating block 30a, the additional process chamber 5200, the exposure device 70, and the development block 30b. A plurality of interface buffers 5400 may be provided, and the plurality of interface buffers 5400 may be provided stacked on top of each other.

[0070] According to an example, the additional process chamber 5200 may be disposed on one side of the transfer chamber 3400 along its longitudinal extension, and the interface buffer 5400 may be disposed on the other side.

[0071] The transport member 5600 transports the substrate (W) between the coating block 30a, the additional process chamber 5200, the exposure device 70, and the development block 30b. The transport member 5600 can be provided by one or more robots.

[0072] According to one example, the transport member 5600 includes a first robot 5602 and a second robot 5606. The first robot 5602 transports the substrate (W) between the coating block 30a, the additional process chamber 5200, and the interface buffer 5400, the interface robot 5606 transports the substrate (W) between the interface buffer 5400 and the exposure device 70, and the second robot 5604 can be provided to transport the substrate (W) between the interface buffer 5400 and the development block 30b.

[0073] The first robot 5602 and the second robot 5606 each include a hand on which a substrate (W) is placed, and the hands can be provided capable of forward and backward movement, rotation about an axis parallel to the third direction (Z), and movement along the third direction (Z).

[0074] The hands of the index robot 2200, the first robot 5602, and the second robot 5606 may all be provided with the same shape as the hands 3422 of the transport robots 3420 and 3424. Alternatively, the hands of the robots that directly transfer the substrate (W) to the transport plate 3240 of the heat treatment chamber may be provided with the same shape as the hands 3422 of the transport robots 3420 and 3424, and the hands of the remaining robots may be provided with different shapes.

[0075] According to one embodiment, the index robot 2200 is provided to directly transfer a substrate (W) to and from a heating unit 4000 of a front end thermal treatment chamber 3200 provided in the coating block 30a.

[0076] In addition, the transfer robot 3420 provided in the coating block 30 a and the developing block 30 b may be provided to directly transfer the substrate (W) to and from the transfer plate 3240 positioned in the thermal treatment chamber 3200 .

[0077] The controller 60 can control the substrate processing apparatus 10. The controller 60 can control the components of the substrate processing apparatus 10.

[0078] The controller 60 may include a process controller implemented by a microprocessor (computer) that controls the substrate processing apparatus 10, a user interface implemented by a keyboard through which an operator inputs commands to manage the substrate processing apparatus 10 and a display that visualizes and displays the operating status of the substrate processing apparatus 10, and a storage unit that stores a control program for executing the processes executed by the substrate processing apparatus 10 under the control of the process controller and a program for causing each component to execute the processes according to various data and processing conditions, i.e., a processing recipe. The user interface and the storage unit may be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

[0079] Hereinafter, the thermal treatment chamber 3200 according to an embodiment of the present invention will be described in detail.

[0080] FIG. 6 is a plan view that illustrates an example of the heat treatment chamber of FIG. 4, and FIG. 7 is a front view of the heat treatment chamber of FIG.

[0081] 6 and 7, the thermal treatment chamber 3200 includes a housing 3210 , a cooling unit 3220 , a heating unit 4000 , and a transfer plate 3240 .

[0082] The housing 3210 is generally formed in a rectangular parallelepiped shape. A loading port (not shown) through which the substrate (W) enters and exits is formed on a side wall of the housing 3210. The loading port may be maintained in an open state. A door (not shown) may be provided to selectively open and close the loading port. The cooling unit 3220, the heating unit 4000, and the transfer plate 3240 are provided within the housing 3210. The cooling unit 3220 and the heating unit 4000 are provided side by side along the second direction (Y). According to an example, the cooling unit 3220 may be positioned closer to the transfer chamber 3400 than the heating unit 4000.

[0083] The cooling unit 3220 includes a cooling plate 3222. The cooling plate 3222 may have a generally circular shape when viewed from above. The cooling plate 3222 has a cooling passage 3224 formed therein. A cooling fluid may flow through the cooling passage 3224.

[0084] The transport plate 3240 is generally disk-shaped and has a diameter corresponding to the substrate (W). Notches 3244 are formed on the edge of the transport plate 3240. The notches 3244 may have a shape corresponding to the protrusions 3429 formed on the hand 3422 of the transport robot 3420 described above. Also, the notches 3244 are provided in a number corresponding to the protrusions 3429 formed on the hand 3422, and are formed at positions corresponding to the protrusions 3429.

[0085] When the hand 3422 and the transport plate 3240 are vertically aligned, the vertical positions of the hand 3422 and the transport plate 3240 are changed, and the substrate (W) is transferred between the hand 3422 and the transport plate 3240. The transport plate 3240 is mounted on a guide rail 3249, and can transport the substrate (W) between the cooling unit 3220 and the heating unit 4000 along the guide rail 3249 by a driver 3246.

[0086] The transporting plate 3240 is provided with a plurality of slit-shaped guide grooves 3242. The guide grooves 3242 extend from an end of the transporting plate 3240 to the inside of the transporting plate 3240. The guide grooves 3242 are provided with their length direction along the second direction (Y), and are positioned to be spaced apart from each other along the first direction (X). The guide grooves 3242 prevent the transporting plate 3240 and the lift pins 1340 from interfering with each other when the substrate (W) is transferred between the transporting plate 3240 and the heating unit 4000.

[0087] The heating unit 4000 is provided as an apparatus for heating a substrate at a temperature higher than room temperature. The heating unit 4000 may perform a soft bake process for heating the substrate (W) before an exposure process is performed on the substrate (W), a PEB (Post Exposure Bake) process for heating the substrate (W) after an exposure process is performed on the substrate (W), or a hard bake process for heating the substrate (W) after a development process is performed on the substrate (W).

[0088] FIG. 8 is a cross-sectional view showing the heating unit of FIG.

[0089] Referring to FIG. 8, the heating unit 4000 may include a body 4100 , a heating chuck 4200 , a baffle assembly 4300 , a gas unit 4400 and a lifting mechanism 4500 .

[0090] The body 4100 may provide a processing space 4102. The body 4100 may include an upper body 4110, a lower body 4120, and a sealing member 4130. The lower body 4120 may have a tub shape with an open top. The upper body 4110 may have a cover shape that covers the top of the lower body 4120. The upper body 4110 may have a tub shape with an open bottom. The upper body 4110 and the lower body 4120 may be combined with each other to define a processing space 4102 in which a substrate (W), which may be a wafer, is processed.

[0091] Either the upper body 4110 or the lower body 4120 may be configured to be movable relative to the other. For example, the upper body 4110 may be configured to be movable in a vertical direction by a lifting mechanism 4500, which may be a driving device including a motor, a cylinder, etc. By providing the upper body 4110 to be movable in a vertical direction, the processing space 4102 may be opened or closed.

[0092] When a substrate (W) is loaded into the processing space 4102, the upper body 4110 can rise to open the processing space 4102, and when a bake process is performed on the substrate (W), the upper body 4110 can descend to close the processing space 4102.

[0093] The sealing member 4130 may be an O-ring that can fill a gap that may occur between the upper body 4110 and the lower body 4120. The sealing member 4130 may have a generally circular ring shape. The sealing member 4130 can be made of engineering plastic that can withstand damage caused by the external environment such as heat and humidity and has a certain degree of elasticity.

[0094] The heated chuck 4200 can heat the substrate (W). The heated chuck 4200 can support the substrate (W). The heated chuck 4200 can include a heating plate 4210, a support member 4220, and a lift pin module 4230.

[0095] The heating plate 4210 can heat the substrate (W). The heating plate 4210 can be made of a material with excellent thermal conductivity. For example, the heating plate 4210 can be made of a metal material such as aluminum. The heating plate 4210 can have a generally disk shape when viewed from above. The heating plate 4210 can be provided in a disk shape having a diameter the same as that of the substrate (W) or larger than that of the substrate (W).

[0096] A heater 4212 may be installed on the heating plate 4210. The heater 4212 may be embedded inside the heating plate 4210. Alternatively, the heater 4212 may be attached to the lower surface of the heating plate 4210. The heater 4212 may be a heating element that generates heat by receiving power from the outside. For example, the heater 4212 may be a resistive heating element.

[0097] Also, support pins 4213 may be installed on the upper surface of the heating plate 4210. A plurality of support pins 4213 may be provided. The support pins 4213 may prevent the upper surface of the heating plate 4210 from directly contacting the lower surface of the substrate (W). If the lower surface of the substrate (W) directly contacts the heating plate 4210, scratches may be generated on the lower surface of the substrate (W). In some cases, if the lower surface of the substrate (W) directly contacts the heating plate 4210, particles may be generated. The support pins 4213 are configured to prevent the lower surface of the substrate (W) from directly contacting the upper surface of the heating plate 4210, but to maintain a very narrow gap between the lower surface of the substrate (W) and the upper surface of the heating plate 4210.

[0098] The support member 4220 can support the heating plate 4210. The support member 4220 can have a generally cylindrical shape with an open top and bottom.

[0099] The lift pin module 4230 can move the substrate (W) in the vertical direction. The lift pin module 4230 can include a plurality of lift pins 4231, a lift plate 4232, a lift shaft 4233, and a lift driver 4234.

[0100] The lift pins 4231 may have a pin shape extending in the vertical direction and may be inserted into pinholes formed in the heating plate 4210. The lift pins 4231 may be installed on the upper surface of the lift plate 4232. The lift plate 4232 may have a plate shape. The lift driver 4234 may be a motor or an air / hydraulic cylinder. The lift driver 4334 may move the lift shaft 4233 connected to the lower part of the lift plate 4232 in the vertical direction. The lift plate 4232 may move the lift pins 4231 in the vertical direction by the movement of the lift shaft 4233.

[0101] The baffle assembly 4300 can uniformly distribute gas supplied by a gas unit 4400 (described below) to the processing space 4102. The baffle assembly 4300 may include a lower baffle 4310, an upper baffle 4320, and a baffle support member 4330.

[0102] The lower baffle 4310 may have first holes 4311, and the upper baffle 4320 may have second holes 4321. When viewed from above, the first holes 4311 and the second holes 4321 may be formed so as not to overlap with each other. The lower baffle 4310 may be installed below the upper baffle 4320. The baffle support member 4330 may have a cylindrical shape with an open lower and upper central region.

[0103] The diameter of the outer surface of the baffle support member 4330 may be smaller than the diameter of the inner wall of the upper body 4110. Thus, the space between the baffle support member 4330 and the upper body 4110 may function as a gas exhaust path through which gas is exhausted through a gas exhaust part 4450, which will be described later.

[0104] The gas unit 4400 is configured to supply gas to the processing space 4102 and exhaust the gas supplied to the processing space 4102 / fumes generated in the processing space 4102 to the outside.

[0105] The gas unit 4400 may include a gas block 4410 , a gas supply pipe 4420 , a gas exhaust pipe 4430 , a gas supply section 4440 , and a gas exhaust section 4450 .

[0106] The gas block 4410 may provide a path for supplying gas to the processing space 4102 and exhausting the atmosphere of the processing space 4102. The gas block 4410 may include an inner body 4411 and an outer body 4412. The outer body 4412 may have a generally cap shape and may be fixedly installed in a form inserted into an upper central region of the upper body 4110. The inner body 4411 is installed in an inner region of the outer body 4412 and may have a generally tubular shape.

[0107] The inner space of the inner body 4411 may be connected to a gas supply pipe 4420, and the space between the outer body 4412 and the inner body 4411 may be connected to a gas exhaust pipe 4430. Thus, the inner space of the inner body 4411 may function as a gas supply path through which gas is supplied, and the space between the outer body 4412 and the inner body 4411 may function as a gas exhaust path through which gas is exhausted.

[0108] The gas supply pipe 4420 can receive gas from a gas supply unit 4440 .

[0109] The gas supply unit 4440 may be configured to supply various kinds of gases. The gas supplied by the gas supply unit 4440 may be an atmosphere change gas that changes the atmosphere of the processing space 4102. The gas supply unit 4440 may include a first gas supply source 4441 that supplies humidified air, a second gas supply source 4442 that supplies carbon dioxide, and a third gas supply source 4443 that supplies an inert gas such as nitrogen.

[0110] The first valve (V1) may be configured to selectively supply humidified air to the gas supply pipe 4420 or to adjust the amount of humidified air supplied per unit time to the gas supply pipe 4420. The first valve (V1) may be an autovalve or a flow rate control valve.

[0111] The second valve (V2) may be configured to selectively supply carbon dioxide to the gas supply pipe 4420 or to adjust the amount of carbon dioxide supplied per unit time to the gas supply pipe 4420. The second valve (V2) may be an autovalve or a flow rate control valve.

[0112] The third valve (V3) may be configured to selectively supply the inert gas to the gas supply pipe 4420 or to adjust the supply amount per unit time of the inert gas supplied to the gas supply pipe 4420. The third valve (V3) may be an autovalve or a flow rate control valve.

[0113] The gas exhaust unit 4450 is connected to the gas exhaust pipe 4430 and can exhaust the gas supplied to the processing space 4102 and fumes that may be generated in the processing space 4102 to the outside of the processing space 4102. The gas exhaust unit 4450 may be a pump.

[0114] A substrate processing method according to an embodiment of the present invention will now be described. The substrate processing method according to an embodiment of the present invention may be a semiconductor device manufacturing method for manufacturing semiconductor devices. In addition, in order to perform the substrate processing method described below, the controller 60 may control components of the substrate processing apparatus 10.

[0115] FIG. 9 is a flow chart illustrating a substrate processing method according to an embodiment of the present invention.

[0116] A substrate processing method according to an embodiment of the present invention may include an exposure process (P1), a baking process (P2), and a cooling process (P3). The exposure process (P1), the baking process (P2), and the cooling process (P3) may be performed sequentially. The exposure process (P1) may be performed by the above-mentioned exposure apparatus 70. The baking process (P2) may be performed by the above-mentioned heating unit 4000. The cooling process (P3) may be performed by the above-mentioned cooling unit 3220.

[0117] The exposure process (P1) may be a process of irradiating light to a photosensitive film formed on a substrate (W). The light irradiated to the substrate (W) in the exposure process (P1) may be light having a wavelength of extreme ultraviolet (EUV).

[0118] The baking step (P2) can be a step of heating the substrate (W), and the cooling step (P3) can be a step of cooling the substrate (W) heated in the baking step (P2).

[0119] In the above example, the substrate processing method includes the exposure process (P1), the baking process (P2), and the cooling process (P3), but before the exposure process (P1), a coating process for coating an inorganic photoresist may be performed in the liquid processing chamber 3600. In addition, after the exposure process (P1), a development process for developing the photosensitive film may be performed in the liquid processing chamber 3600.

[0120] FIG. 10 is a flow chart illustrating the steps involved in the baking process of FIG.

[0121] 10, the baking process according to an embodiment of the present invention may include steps S10 to S70 performed in sequence.

[0122] 11 is a diagram showing the appearance of the heating unit performing step S10 of FIG. 10. Referring to FIGS. 10 and 11, in step S10, a substrate (W) may be loaded into the processing space 4102. Step S10 may be a substrate loading step. In step S10, the lifting mechanism 4500 may move the upper body 4110 upward to open the processing space 4102, and the lift pins 4231 may be pinned up. Once the substrate (W) is loaded into the processing space 4102, the lifting mechanism 4500 may move the upper body 4110 downward to close the processing space 4102. Thereafter, the lift pin module 4230 may lower the lift pins 4231 to lower the substrate (W) onto the heating chuck 4200.

[0123] FIG. 12 is a diagram showing the appearance of a heating unit performing step S20 of FIG. 10. Referring to FIG. 10 and FIG. 12, in step S20, a substrate (W) placed on a heating chuck 4200 may be heated. Step S20 may be a first substrate heating step. In step S20, the heating chuck 4200 may generate heat to heat the substrate (W). For example, the heater 4212 provided in the heating chuck 4200 generates heat, and the temperature of the heating plate 4210 increases, so that the heating plate 4210 may transfer heat (H1) of a first temperature to the substrate (W) placed on the support pins 4213. In step S20, a special atmosphere conversion gas may not be supplied to the processing space 4102. In addition, the atmosphere in the processing space 4102 may be equal to a general atmospheric condition.

[0124] Step S20 may be a pre-heating step of increasing the temperature of the substrate (W) to a set temperature before a second substrate heating step of heating the substrate (W) after the atmosphere change gas is injected into the processing space 4102 is performed.

[0125] The atmosphere changing step will be described below. Steps S30, S40, and S50 may be included in the atmosphere changing step. The atmosphere changing step may change the atmosphere in the processing space 4102. For example, the atmosphere changing step may be a step of changing the concentration ratio of gases contained in the atmosphere in the processing space 4102.

[0126] FIG. 13 is a diagram showing the appearance of a heating unit performing step S30 of FIG. 10. Referring to FIG. 10 and FIG. 13, in step S30, the lift pin module 4230 lifts the substrate (W) to a position close to the baffle assembly 4300. Step S30 may be a substrate lifting step. In step S30, the gap between the upper surface of the substrate (W) and the lower surface of the lower baffle 4310 is narrowed to a set gap (D). The set gap may be a gap selected within a range of 1 mm to 5 mm. By narrowing the gap between the upper surface of the substrate (W) and the lower baffle 4310 in step S30, the upper region of the substrate (W), more specifically, the volume between the substrate (W) and the lower baffle 4310, may be reduced.

[0127] Even at this time, the heater 4212 of the heating chuck 4200 can continue to generate heat in order to prevent the temperature of the heating plate 4210 from dropping due to the heater 4212 stopping its heat generation. If a substrate (W) is placed on the heating plate 4210 after the heating plate 4210 has cooled down, the photosensitive film formed on the substrate (W) may not be baked properly.

[0128] FIG 14 is a diagram showing the appearance of the heating unit performing step S40 of FIG 10. Referring to FIG 10 and FIG 14, after the gap between the substrate (W) and the lower baffle 4310 reaches the set gap (D), the gas unit 4400 can supply the atmosphere conversion gas to the processing space 4102. Step S40 may be a gas discharge step. The atmosphere conversion gas may be any one of various gases that the gas unit 4400 can supply. For example, as shown in FIG 14, the first valve (V1) is opened and the first gas supply source 4441 can supply humidified air to the processing space 4102.

[0129] At this time, the volume of the space above the substrate (W) becomes very small due to the rise of the substrate (W). Therefore, the atmosphere in the space above the substrate (W), more specifically, the space between the substrate (W) and the lower baffle 4310, can be changed very quickly. The photosensitive film formed on the upper surface of the substrate (W) is significantly affected by the atmosphere in the space above the substrate (W), but since the atmosphere change gas is supplied when the volume of the space above the substrate (W) is very small, the atmosphere in the space above the substrate (W) can be changed very quickly. Step S40 can be performed until the concentration of the atmosphere change gas in the space above the substrate (W) reaches the set concentration.

[0130] FIG. 15 is a diagram showing the appearance of a heating unit performing step S50 of FIG. 10. Referring to FIG. 10 and FIG. 15, after the atmosphere change gas is discharged while the substrate (W) is elevated, the substrate (W) may be lowered to perform a subsequent heating step for the substrate (W). Step S50 may be a substrate lowering step. If the substrate (W) is lowered too quickly during the substrate lowering step, the concentration of the atmosphere change gas supplied to the space above the substrate (W) may change. For example, if the substrate (W) is lowered too quickly, the concentration of the atmosphere change gas may be reduced in the space above the substrate (W). If the concentration of the atmosphere change gas is reduced, the atmosphere of the processing space 4102 for processing the substrate (W) may not be maintained constant. This may hinder uniform processing of the substrate (W).

[0131] In the substrate lowering step according to an embodiment of the present invention, the gas unit 4400 lowers the substrate (W) onto the heated chuck 4200 while maintaining the supply of the atmosphere conversion gas, and the substrate (W) may be lowered at a preset speed. At this time, the set speed may be a speed at which the concentration of the atmosphere conversion gas in the upper region of the substrate (W) can be maintained at or above the preset concentration. The set speed may be previously stored in the controller 60 through previously performed experiments or simulations.

[0132] The set concentration may vary depending on the recipe required for processing the substrate (W). For example, the set concentration may be a concentration selected within a range of 0 to 100%. For example, when the substrate (W) is first inserted into the processing space 4102, it may have an atmosphere of general atmospheric conditions. Thereafter, in an atmosphere conversion step, an atmosphere conversion gas, for example, nitrogen gas, may be supplied so that the concentration of nitrogen gas in the processing space 4102 becomes 100%.

[0133] In the substrate lowering step, the lowering speed of the substrate (W) may vary depending on the supply flow rate of the atmosphere conversion gas of the gas unit 4400. For example, when the gas unit 4400 supplies the atmosphere conversion gas at a first flow rate per unit time, the substrate (W) may be lowered at a first speed, and when the gas unit 4400 supplies the atmosphere conversion gas at a second flow rate per unit time, the substrate (W) may be lowered at a second speed. The second flow rate may be greater than the first flow rate, and the second speed may be faster than the first speed.

[0134] Control settings such as the gas supply flow rate per unit time and the descending speed of the substrate (W) for switching the atmosphere of the processing space 4102 to a set concentration can be preset based on the collected process data using a substrate-type sensor equipped with a sensor for sensing gas concentration / humidity, etc., before processing the substrate (W) to be processed.

[0135] FIG 16 is a diagram showing the appearance of a heating unit performing step S60 of FIG 10. Referring to FIG 10 and FIG 16, after step S50 is completed, the substrate (W) may be seated again on the heating chuck 4200. The heating chuck 4200 may heat the substrate (W). Step S50 may be a second substrate heating step. The heating chuck 4200 may heat the substrate (W) at a second temperature. The second temperature may be a temperature different from the first temperature to which the substrate (W) is heated in the first substrate heating step. Also, step S50 may be performed in a state in which the atmosphere of the processing space 4102 for the substrate (W) is changed.

[0136] In step S70, the processed substrate (W) may be removed from the processing space 4102. Step S70 may be a substrate removal step. In step S70, the lift mechanism 4500 may open the processing space 4102, and the lift pin module 4230 may lift the substrate (W).

[0137] The above-mentioned steps S20 to S60 may be continuously performed in a state where the processing space 4102 is closed. Therefore, in the present invention, when changing the atmosphere of the processing space 4102, a problem of gas supplied into the processing space 4102 flowing into the inner space of the housing 3210 may not occur.

[0138] Also, the height to which the lift pin module 4230 lifts the substrate W in steps S10 and S70 may be equal to that of the substrate W. However, the height to which the substrate W is lifted in steps S10 and S70 may be different from the height to which the substrate W is lifted in step S30.

[0139] The effects of the present invention will be described below by comparing an embodiment of the present invention with a comparative example. The embodiment may be a case where the substrate (W) is elevated in the atmosphere exchange step to narrow the gap between the substrate (W) and the lower baffle 4310. The comparative example may be a case where the substrate (W) is seated on the heating chuck 4200 in the atmosphere exchange step.

[0140] The examples are indicated as "moving" in the graphs of FIGS. 17 to 19, and the comparative examples are indicated as "staying."

[0141] FIG. 17 is a graph showing the time required for changing the atmosphere for each region of a substrate, and shows an example of the present invention and a comparative example.

[0142] Referring to Fig. 17, the time required for atmosphere change (replacement time) may refer to the time until the concentration of the atmosphere change gas in the space above the substrate (W) reaches a set concentration. As can be seen from Fig. 17, the embodiment requires a much shorter time for atmosphere change than the comparative example. Also, it can be seen that there is little deviation in the time required for the concentration of the atmosphere change gas to reach a set concentration in different regions of the substrate (W). Therefore, according to the embodiment of the present invention, it is possible to reduce the time required for atmosphere change and improve the processing uniformity in different regions of the substrate (W).

[0143] FIG. 18 is a graph showing the time for the concentration of the atmosphere conversion gas in the upper region of the substrate to reach a set concentration, showing an embodiment of the present invention and a comparative example. The X-axis may be time (seconds) and the Y-axis may be the concentration of the atmosphere conversion gas. In FIG. 18, the set concentration may be 0.1 (i.e., 10%). It can be seen that the time for the minimum concentration in the space above the substrate (W) to reach the set concentration is shorter in the embodiment than in the comparative example. In addition, the substrate (W) can be lowered after 1 second. As can be seen from a close examination of FIG. 18, even when the substrate (W) is lowered, the minimum concentration in the space above the substrate (W) is maintained at 0.1 or more.

[0144] FIG. 19 is a graph showing standard deviations of the atmosphere switching gas concentration in each region of the substrate in the upper region of the substrate, and shows an example of the present invention and a comparative example.

[0145] 19, it can be seen that the standard deviation of the concentration of the atmosphere switching gas in each region of the substrate (W) becomes smaller faster in the embodiment than in the comparative example. That is, it can be seen that the embodiment of the present invention quickly switches the atmosphere in the processing space 4102 and quickly stabilizes the concentration deviation in each region of the substrate (W).

[0146] In the above example, the substrate (W) is first heated, then the substrate (W) is lifted, and then the atmosphere conversion gas is discharged, but the present invention is not limited to this example. As shown in Fig. 20, when the substrate (W) is inserted into the processing space 4102, the substrate (W) is lifted by the lift pin module 4230, so that the gas discharge step can be performed immediately after the substrate insertion step to convert the atmosphere in the processing space 4102 from the air state to a set atmosphere.

[0147] In the above example, the atmosphere change step is performed once, but the present invention is not limited to this example. For example, as shown in FIG 21, after the substrate heating step is completed, the atmosphere change step may be performed a preset number of times.

[0148] In the above example, the cooling process (P3) is performed in the cooling unit 3220, but the present invention is not limited thereto. For example, as shown in FIG. 22, the gas supply unit 4440 may further include a cooling gas supply source 4444 and a fourth valve (V4). The cooling process (P3) may be continuously performed in the processing space 4102 after the baking process (P2) on the substrate (W) is completed from the processing space 4102. Also, during the cooling process (P3), the lift pin module 4230 may supply a cooling gas to the substrate (W) while lifting the substrate (W). The cooling gas may be selected from various gases, and may be CDA or an inert gas at room temperature.

[0149] In the above example, the gas supply unit 4440 supplies one gas selected from the gases that can be supplied during the atmosphere change step, but the present invention is not limited to this example. For example, the gas supply unit 4440 may supply two or more types of gases to the processing space 4102 during the atmosphere change step.

[0150] It should be understood that illustrative embodiments are disclosed herein and that other variations are possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be used interchangeably in selected embodiments even if not specifically illustrated or described. Such variations are not to be regarded as departing from the spirit and scope of the present disclosure, and all such variations that are obvious to one of ordinary skill in the art are intended to be included within the scope of the following claims. [Explanation of symbols]

[0151] 4000 Heating Unit 4100 Body 4102 Processing space 4110 Upper body 4120 Lower Body 4130 Sealing materials 4200 Heating Chuck 4210 Heating Plate 4212 Heater 4213 Support pin 4220 Support member 4230 Lift Pin Module 4231 Lift pin 4232 Lift Plate 4233 Lifting shaft 4234 Lifting drive 4300 Baffle Assembly 4310 Lower Baffle 4311 Hall 4320 Upper baffle 4321 Hall 4330 Baffle support member 4400 Gas Unit 4410 Gas Block 4411 Internal tube 4412 External tube 4420 Gas supply pipe 4430 Gas exhaust pipe 4440 Gas Supply Section 4441 First gas supply source 4442 Second Gas Supply Source 4443 Third Gas Supply Source V1 First valve V2 Second valve V3 3rd valve 4450 Gas exhaust section 4500 Lifting mechanism

Claims

1. 1. A method for processing a substrate, comprising: inserting the substrate into a processing space provided by a body; a heating step of heating the substrate placed in the processing space on a heating chuck; An atmosphere changing step of changing the atmosphere of the processing space, The atmosphere changing step includes: a gas ejection step of ejecting the atmosphere exchange gas to a baffle that is disposed above the heating chuck and faces the heating chuck, while the substrate is positioned closer to the baffle than in the heating step; and lowering the substrate onto the heated chuck while maintaining the injection of the atmosphere change gas.

2. The substrate lowering step includes:

2. The substrate processing method according to claim 1, wherein the substrate is lowered at a speed at which a concentration of the atmosphere switching gas in an area above the substrate is maintained at or above a set concentration.

3. The substrate lowering step includes:

2. The substrate processing method of claim 1, wherein when the atmosphere changing gas is supplied at a first flow rate, the substrate is lowered at a first speed, and when the atmosphere changing gas is supplied at a second flow rate greater than the first flow rate, the substrate is lowered at a second speed greater than the first speed.

4. The atmosphere changing step includes:

2. The method of claim 1, further comprising a substrate lifting step of lifting the substrate so that a gap between the substrate and the baffle becomes a set gap.

5. 5. The method of claim 4, wherein the set interval is selected from the range of 1 mm to 5 mm.

6. 2. The method of claim 1, wherein the atmosphere change gas is any one selected from the group consisting of humidified air, carbon dioxide, and nitrogen.

7. The method further includes a substrate unloading step of unloading the substrate from the processing space, The method of claim 1 , wherein the atmosphere change step is performed a plurality of times between the substrate loading step and the substrate unloading step.

8. The method further includes a substrate unloading step of unloading the substrate from the processing space, The method of claim 1 , wherein the heating step is performed a plurality of times between the substrate loading step and the substrate unloading step.

9. The heating step comprises: a first heating step performed before the atmosphere changing step; A second heating step performed after the atmosphere changing step, The substrate processing method of claim 8 , wherein the first heating step and the second heating step heat the substrate to different temperatures.

10. The baking process including the heating step and the atmosphere changing step includes:

2. The method of claim 1, which is performed after an exposure process of irradiating a photosensitive film coated on the substrate with light is performed.

11. The method of claim 10, wherein the photosensitive film is made of an inorganic photoresist.

12. In the manufacturing method, an exposure step of irradiating a photosensitive film formed on the wafer with light; a baking step of heating the wafer after the exposure step; a cooling step of cooling the wafer after the baking step, The baking step includes: inserting the wafer into a processing space provided by a body; a heating step of heating the wafer placed in the processing space on a heating chuck; and an atmosphere changing step of changing the atmosphere of the processing space while the processing space is closed.

13. The atmosphere changing step includes:

13. The method of claim 12, further comprising a gas ejection step of ejecting the atmosphere exchange gas from a baffle disposed above the heating chuck and facing the heating chuck, the baffle ejecting the atmosphere exchange gas while the wafer is positioned closer to the baffle than in the heating step.

14. The atmosphere changing step includes: The method of claim 13 further comprising a lowering step of lowering the wafer onto the heated chuck while maintaining the injection of the atmosphere change gas.

15. The descending step includes: The method of claim 14 , further comprising lowering the wafer at a rate that maintains a concentration of the atmospheric switching gas at or above a set concentration in a region between the wafer and the baffle.

16. In an apparatus for processing a substrate, a body providing a processing space; a heating chuck for supporting and heating the substrate in the processing space; a gas supply unit for supplying a gas to the processing space; a baffle located above the heating chuck and distributing the gas supplied by the gas supply unit; A controller; The heating chuck is a heating plate provided with a heater for heating the substrate; a lift pin module for raising and lowering the substrate; The controller includes: a substrate processing apparatus, wherein the lift pin module supports the substrate such that a gap between the substrate and the baffle is a set gap, and the gas supply unit controls the lift pin module and the gas supply unit so that the gas supply unit injects an atmosphere switching gas into the processing space to switch the atmosphere in the processing space.

17. The controller includes: The substrate processing apparatus of claim 16, wherein the substrate is lowered in a direction closer to the heated chuck while maintaining the discharge of the atmosphere changing gas, and the lowering speed of the substrate is set to a speed at which the concentration of the atmosphere changing gas in the space between the substrate and the baffle is maintained above a set concentration.

18. The substrate processing apparatus of claim 17 , wherein the set interval is a selected interval in the range of 1 mm to 5 mm.

19. The gas supply unit includes:

17. The substrate processing apparatus of claim 16, comprising one or more of a first gas supply source supplying humidified air, a second gas supply source supplying carbon dioxide, and a third gas supply source supplying an inert gas.

20. The body includes: an upper body and a lower body coupled with the upper body to define the processing space, The apparatus comprises: a lifting device for lifting and lowering the upper body to open and close the treatment space, The controller includes: The substrate processing apparatus according to claim 16 , further comprising: a control unit that controls the lifting device and the gas supply unit so that the discharge of the atmosphere conversion gas is performed in a state where the processing space is closed.

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