Switch module and inverter

Abstract

To provide an electrical device in which a physical quantity of a second semiconductor chip mounted on a second mounting part is detected.SOLUTION: An electrical device includes a first laminate 330 which includes a first semiconductor chip 310 including a first switch and a first mounting part 531 mounting the first semiconductor chip, a second laminate 340 which includes a second semiconductor chip 320 including a second switch and a second mounting part 532 mounting the second semiconductor chip and which has higher heat dissipation than the first laminate, a temperature detector 523 provided in the first laminate out of the first laminate and the second laminate and configured to detect temperature of the first switch, and a current detector 545 provided in the second laminate out of the first laminate and the second laminate and configured to detect current flowing through the second switch.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The disclosure provided herein relates to a switch module comprising a semiconductor chip. [Background technology]

[0002] Patent Document 1 describes a power supply device including a plurality of semiconductor devices, a substrate on which the plurality of semiconductor devices are mounted, and a temperature detector that detects the temperature of one of the plurality of semiconductor devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-096886 A Summary of the Invention [Problem to be solved by the invention]

[0004] The substrate has a thin plate portion having a small thickness and a thick plate portion having a large thickness. One of the plurality of semiconductor devices is mounted on the thin plate portion. The remaining of the plurality of semiconductor devices is mounted on the thick plate portion.

[0005] A temperature detector is provided on the semiconductor device mounted on the thin plate portion. However, there is no disclosure of a configuration for detecting a physical quantity of the semiconductor device mounted on the thick plate portion (second mounting portion).

[0006] Therefore, an object of the present disclosure is to provide a switch module disclosed having a configuration in which a physical quantity of a second semiconductor chip mounted on a second mounting portion is detected. [Means for solving the problem]

[0007] According to one aspect of the present disclosure, a switch module includes: a first stack (330) including a first semiconductor chip (310) having a first switch (521) and a first mounting portion (531) for mounting the first semiconductor chip; a second stack (340) including a second semiconductor chip (320) having a second switch (522) and a second mounting portion (532) for mounting the second semiconductor chip, the second stack (340) having a higher heat dissipation capability than the first stack; a temperature detector (523) provided in the first stack of the first stack and the second stack, for detecting the temperature of the first switch; a current detector (545) provided in the second stack of the first stack and the second stack, for detecting a current flowing through the second switch; A signal terminal (549) connected to the first switch and the second switch; and The signal terminal is partially exposed from the coating resin (600) that coats the first laminate, the second laminate, and the signal terminal. The signal terminals include a terminal (546, 547) to which a temperature detector that detects the temperature of the first switch is connected and a current sensor terminal (545a) to which a current detector that detects the current flowing through the second switch is connected, but do not include a terminal for detecting the temperature of the second switch or a terminal for detecting the current of the first switch.

[0008] According to this, a configuration is disclosed in which the amount of current is detected as a physical quantity of the second semiconductor chip (320) mounted on the second mounting portion (532).

[0009] It should be noted that the reference numbers in parentheses above merely indicate the corresponding relationship with the configurations described in the embodiments described below, and do not in any way limit the technical scope. [Brief description of the drawings]

[0010] [Figure 1] FIG. 2 is a circuit diagram showing an in-vehicle system. [Diagram 2] FIG. 2 is a top view illustrating a switch module. [Diagram 3] 3 is a top view of the switch module in which some components are removed from FIG. 2. [Figure 4]4 is a cross-sectional view of the switch module taken along line IV-IV shown in FIG. 2. [Diagram 5] 13 is a cross-sectional view for explaining a modified example of the switch module. FIG. [Figure 6] 13 is a top view for explaining a modified example of the switch module. FIG. [Figure 7] 13 is a cross-sectional view for explaining a modified example of the switch module. FIG. [Figure 8] 13 is a cross-sectional view for explaining a modified example of the switch module. FIG. [Figure 9] 13 is a top view for explaining a modified example of the switch module. FIG. [Figure 10] 13 is a top view for explaining a modified example of the switch module. FIG. [Figure 11] FIG. 11 is a circuit diagram for explaining a modified example of a connection configuration of the switches. [Figure 12] FIG. 11 is a circuit diagram for explaining a modified example of a connection configuration of the switches. [Figure 13] 13 is a top view for explaining a modified example of the switch module. FIG. [Figure 14] 13 is a cross-sectional view for explaining a modified example of the switch module. FIG. [Figure 15] 13 is a cross-sectional view for explaining a modified example of the switch module. FIG. [Figure 16] 13 is a top view for explaining a modified example of the switch module. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, several embodiments for carrying out the present disclosure will be described with reference to the drawings. In each embodiment, the same reference numerals may be used to designate parts corresponding to matters described in the preceding embodiment, and duplicated descriptions may be omitted. In each embodiment, when only a part of the configuration is described, the other embodiment described previously may be applied to the other parts of the configuration.

[0012] In addition to combinations of parts that are explicitly stated as possible in each embodiment, it is also possible to partially combine embodiments together, embodiments and variations, and variations together, even if not explicitly stated, provided that there are no particular problems with the combination.

[0013] Hereinafter, an embodiment will be described with reference to the drawings.

[0014] (First embodiment) First, an in-vehicle system 100 provided with a power conversion device 300 will be described with reference to Fig. 1. This in-vehicle system 100 constitutes a system for an electric vehicle. The in-vehicle system 100 has a battery 200, a power conversion device 300, a motor 400, and a substrate (not shown). The substrate is equipped with a plurality of ECUs and a gate driver (not shown) that controls the driving of switches based on control signals output from the plurality of ECUs.

[0015] These multiple ECUs exchange signals with multiple other ECUs mounted in various locations on the vehicle. These multiple ECUs cooperate with each other via bus wiring to control the electric vehicle. Through the control of these multiple ECUs, regeneration and power running of the motor 400 are controlled according to the SOC of the battery 200. SOC is an abbreviation for state of charge. ECU is an abbreviation for electronic control unit.

[0016] The ECU generates a pulse signal as a control signal. The ECU adjusts the on-duty ratio and frequency of this pulse signal. The on-duty ratio and frequency are determined based on the output of a sensor (not shown), the target torque of the motor 400, the SOC of the battery 200, and the like.

[0017] Battery 200 has multiple secondary batteries. These multiple secondary batteries are connected in series to form a battery stack. The SOC of this battery stack corresponds to the SOC of battery 200. As the secondary batteries, lithium ion secondary batteries, nickel hydrogen secondary batteries, organic radical batteries, etc. can be used.

[0018] The power conversion device 300 has an inverter 500. As the inverter 500, the power conversion device 300 performs power conversion between the battery 200 and the motor 400. The power conversion device 300 converts DC power of the battery 200 into AC power. The power conversion device 300 converts AC power generated by power generation (regeneration) of the motor 400 into DC power.

[0019] The motor 400 is connected to an output shaft of an electric vehicle (not shown). The rotational energy of the motor 400 is transmitted to the running wheels of the electric vehicle via the output shaft. Conversely, the rotational energy of the running wheels is transmitted to the motor 400 via the output shaft.

[0020] The motor 400 is powered by AC power supplied from the power conversion device 300. This provides a propulsive force to the running wheels. The motor 400 also regenerates power using the rotational energy transmitted from the running wheels. The AC power generated by this regeneration is converted into DC power by the power conversion device 300. This DC power is supplied to the battery 200. The DC power is also supplied to various electrical loads mounted on the electric vehicle.

[0021] <Inverter> The inverter 500 has a capacitor 303 and a plurality of switch modules 510. A first power supply bus bar 301 and a second power supply bus bar 302 are connected to the battery 200. The capacitor 303 and the plurality of switch modules 510 are connected in parallel between the first power supply bus bar 301 and the second power supply bus bar 302. The plurality of switch modules 510 and the motor 400 are connected via an output bus bar 440. The switch module 510 corresponds to an electric device.

[0022] When the motor 400 is powered, the high-side switches and low-side switches of the multiple switch modules 510 are PWM-controlled by a control signal from the ECU. This generates a three-phase AC current in the inverter 500. When the motor 400 generates (regenerates), the ECU, for example, stops outputting the control signal. This causes the AC power generated by the power generation of the motor 400 to pass through the diodes of the multiple three-phase switch modules 510. As a result, the AC power is converted into DC power.

[0023] <Switch module> Each of the switch modules 510 has a first switch 521 and a second switch 522 as switches. Each of the switch modules 510 has a first diode 521a, a second diode 522a, a temperature sensitive diode 523, a current sensor 545, and a signal terminal 549 in addition to the first switch 521 and the second switch 522. The temperature sensitive diode 523 corresponds to a temperature detector. The current sensor 545 corresponds to a current detector.

[0024] The signal terminal 549 has a gate terminal 543a, a current sensor terminal 545a, an anode terminal 546, a cathode terminal 547, and a Kelvin emitter terminal 548. The gate terminal 543a and the Kelvin emitter terminal 548 correspond to a common terminal.

[0025] The first switch 521, the second switch 522, the first diode 521a, the second diode 522a, the temperature sensitive diode 523, the current sensor 545, and the signal terminal 549 are covered with a covering resin 600 to form the switch module 510.

[0026] In this embodiment, an example will be described in which an RCIGBT in which a first diode 521a and a second diode 522a are integrated into the first switch 521 and the second switch 522, respectively, is applied. Of course, the switch and the diode may be separate structures. In addition, the first switch 521 and the second switch 522 are not limited to IGBTs. The first switch 521 and the second switch 522 may be semiconductor elements such as MOSFETs.

[0027] 1, a cathode electrode of a first diode 521a is connected to a collector electrode 541 of the first switch 521. An anode electrode of the first diode 521a is connected to an emitter electrode 542 of the first switch 521. The first diode 521a is connected in anti-parallel to the first switch 521.

[0028] A gate terminal 543 a is connected to gate electrode 543 of first switch 521 .

[0029] Further, a temperature sensing diode 523 is disposed in the first switch 521. The temperature sensing diode 523 is a temperature detector for measuring the temperature of the first switch 521. An anode terminal 546 is connected to the anode of the temperature sensing diode 523. A cathode terminal 547 is connected to the cathode of the temperature sensing diode 523.

[0030] A cathode electrode of a second diode 522a is connected to a collector electrode 541 of the second switch 522. An anode electrode of the second diode 522a is connected to an emitter electrode 542 of the second switch 522. The second diode 522a is connected in anti-parallel to the second switch 522.

[0031] A gate terminal 543 a is connected to a gate electrode 543 of the second switch 522 .

[0032] In addition, a current sensor 545 is connected to the second switch 522. The current sensor 545 is a current detector for measuring the current flowing through the second switch 522.

[0033] Furthermore, a Kelvin emitter terminal 548 is electrically connected to the emitter electrode 542 of the first switch 521 and the emitter electrode 542 of the second switch 522. The Kelvin emitter terminal 548 is a terminal for extracting the potential of the emitter electrodes 542 of the first switch 521 and the second switch 522.

[0034] 1, a collector electrode 541 of the first switch 521 and a collector electrode 541 of the second switch 522 are connected via a first conductive portion 530. An emitter electrode 542 of the first switch 521 and an emitter electrode 542 of the second switch 522 are connected via a second conductive portion 560. This connects the first switch 521 and the second switch 522 in parallel. Electricity is applied to the first switch 521 and the second switch 522 simultaneously.

[0035] In the drawings, elements common to the first switch 521 and the second switch 522 are given reference symbols for either the first switch 521 or the second switch 522.

[0036] The multiple switch modules 510 include a high-side switch module 517 located on the high-side side and a low-side switch module 518 located on the low-side side.

[0037] As shown in FIG. 1, a part of the first conductive portion 530 exposed from the coating resin 600 of the high-side switch module 517 is connected to the first power supply bus bar 301 as a first main terminal.

[0038] A part of the second conductive portion 560 exposed from the coating resin 600 of the low-side switch module 518 is connected to the second power supply bus bar 302 as a second main terminal.

[0039] A part of the second conductive section 560 exposed from the coating resin 600 of the high-side switch module 517 is connected to a part of the first conductive section 530 exposed from the coating resin 600 of the low-side switch module 518 .

[0040] As a result, the high-side switch module 517 and the low-side switch module 518 are connected in series between the first power supply bus bar 301 and the second power supply bus bar 302.

[0041] Furthermore, an output bus bar 440 is connected to a part of the second conductive section 560 of the high-side switch module 517 and a part of the first conductive section 530 of the low-side switch module 518 .

[0042] Furthermore, the high-side switch module 517 includes a first switch module 511 , a third switch module 513 , and a fifth switch module 515 .

[0043] The low-side switch module 518 includes a second switch module 512 , a fourth switch module 514 and a sixth switch module 516 .

[0044] Output bus bar 440 includes a U-phase bus bar 410 connected to the U-phase stator coil, a V-phase bus bar 420 connected to the V-phase stator coil, and a W-phase bus bar 430 connected to the W-phase stator coil.

[0045] A part of the second conductive portion 560 of the first switch module 511 and a part of the first conductive portion 530 of the second switch module 512 are connected to a U-phase stator coil of the motor 400 via a U-phase bus bar 410 .

[0046] A part of the second conductive portion 560 of the third switch module 513 and a part of the first conductive portion 530 of the fourth switch module 514 are connected to a V-phase stator coil of the motor 400 via a V-phase bus bar 420 .

[0047] The second conductive portion 560 of the fifth switch module 515 and a part of the first conductive portion 530 of the sixth switch module 516 are connected to the W-phase stator coil of the motor 400 via a W-phase bus bar 430 .

[0048] <Mechanical configuration of the switch module> In the following, the three mutually orthogonal directions are referred to as the x-direction, the y-direction, and the z-direction. Note that the designation of "direction" is omitted in the drawings. The x-direction corresponds to the first direction. The y-direction corresponds to the second direction. Note that in the drawings, the battery 200 is abbreviated as "BATT."

[0049] In addition to the components described above, the switch module 510 has a first semiconductor substrate 311, a second semiconductor substrate 321, a plurality of pads 570, a plurality of wires 580, a first terminal 591, a second terminal 592, and solder 700. The solder 700 corresponds to a joining member.

[0050] FIG. 2 shows a top view of the switch module 510. FIG. 3 shows a top view of the switch module 510 from FIG. 2, omitting the coating resin 600, the second conductive part 560, the first terminal 591, the second terminal 592, and the solder 700 between the second conductive part 560 and the terminals. In FIG. 3, the contour of the coating resin 600 is shown by a two-dot chain line. Also, the boundary between the first mounting part 531 and the second mounting part 532 is shown by a dashed line. This is the same in the drawings described below. FIG. 4 shows a cross-sectional view of the switch module 510 taken along the line IV-IV shown in FIG. 2.

[0051] <First semiconductor substrate> The first semiconductor substrate 311 is a substrate on which the first switch 521, the first diode 521a, and the temperature sensitive diode 523 are formed. The first semiconductor substrate 311 is formed of silicon, a wide band gap semiconductor having a wider band gap than silicon, or the like.

[0052] Examples of wide band gap semiconductors include silicon carbide, gallium nitride, gallium oxide, and diamond. In Figures 2 and 3, the temperature sensitive diode 523 is shown diagrammatically by a broken line.

[0053] 4, the first semiconductor substrate 311 has a flat shape with a small thickness in the z direction. The first semiconductor substrate 311 has a first substrate surface 311a and a second substrate surface 311b aligned in the z direction.

[0054] A collector electrode 541 is provided on the first substrate surface 311a of the first semiconductor substrate 311. The collector electrode 541 is provided on almost the entire surface of the first substrate surface 311a. The collector electrode 541 also serves as the cathode electrode of the first diode 521a.

[0055] An emitter electrode 542 and a gate electrode 543 are provided on the second substrate surface 311b of the first semiconductor substrate 311. The emitter electrode 542 and the gate electrode 543 are provided on a part of the second substrate surface 311b. The emitter electrode 542 also serves as the anode electrode of the first diode 521a. The gate electrode 543 has, for example, a trench gate structure. Although not shown, the gate electrode 543 is embedded in the first semiconductor substrate 311.

[0056] 2 or 3, in addition to the emitter electrode 542 and gate electrode 543 described above, at least four functional pads 570 are provided on the second substrate surface 311b. The four pads 570 are provided together at the end of the second substrate surface 311b in the y direction, aligned with the emitter electrode 542 in the y direction. The pads 570 are electrodes for signals. The pads 570 are electrically isolated from the emitter electrode 542.

[0057] Specifically, the four pads 570 are a pad 570 for the gate electrode 543, a pad 570 for the anode of the temperature sensitive diode 523, a pad 570 for the cathode of the temperature sensitive diode 523, and a pad 570 for the Kelvin emitter.

[0058] A pad 570 for the gate electrode 543 is connected to a gate terminal 543a via a wire 580. A pad 570 for the anode of the temperature sensitive diode 523 is connected to an anode terminal 546 via a wire 580. A pad 570 for the cathode of the temperature sensitive diode 523 is connected to a cathode terminal 547 via a wire 580. A pad 570 for the Kelvin emitter is connected to a Kelvin emitter terminal 548 via a wire 580.

[0059] Hereinafter, first semiconductor substrate 311 , collector electrode 541 , emitter electrode 542 and gate electrode 543 will be collectively referred to as first semiconductor chip 310 .

[0060] <Second semiconductor substrate> The second semiconductor substrate 321 is a substrate on which the second switch 522, the second diode 522a, and the current sensor 545 are provided. The second semiconductor substrate 321 is also formed of silicon, a wide bandgap semiconductor having a wider bandgap than silicon, or the like.

[0061] In addition, in FIG. 2 and FIG. 3, the current sensor 545 is indicated typically by a dashed line.

[0062] 4, the second semiconductor substrate 321 has a flat shape with a small thickness in the z direction. The second semiconductor substrate 321 has a third substrate surface 321a and a fourth substrate surface 321b aligned in the z direction.

[0063] A collector electrode 541 is provided on the third substrate surface 321a of the second semiconductor substrate 321. The collector electrode 541 is provided on almost the entire surface of the third substrate surface 321a. The collector electrode 541 also serves as a cathode electrode of the second diode 522a.

[0064] An emitter electrode 542 and a gate electrode 543 are provided on a fourth substrate surface 321b of the second semiconductor substrate 321. The emitter electrode 542 and the gate electrode 543 are provided on a part of the fourth substrate surface 321b. The emitter electrode 542 also serves as an anode electrode of the second diode 522a. Although not shown, the gate electrode 543 is embedded in the second semiconductor substrate 321.

[0065] Furthermore, in addition to the gate electrode 543 and emitter electrode 542 described above, at least three functional pads 570 are provided on the fourth substrate surface 321b. The three pads 570 are provided together at the end of the fourth substrate surface 321b in the y direction in a manner aligned with the emitter electrode 542 in the y direction.

[0066] Specifically, the three pads 570 are a pad 570 for the gate electrode 543, a pad 570 for the current sensor 545, and a pad 570 for the Kelvin emitter.

[0067] A pad 570 for the gate electrode 543 is connected to a gate terminal 543a via a wire 580. A pad 570 for the current sensor 545 is connected to a current sensor terminal 545a via a wire 580. A pad 570 for the Kelvin emitter is connected to a Kelvin emitter terminal 548 via a wire 580.

[0068] As shown in Figures 2 and 3, the gate terminal 543a is connected to one of the four pads 570 provided on the first semiconductor substrate 311 and one of the three pads 570 provided on the second semiconductor substrate 321 via different wires 580.

[0069] The Kelvin emitter terminal 548 is connected to one of four pads 570 provided on the first semiconductor substrate 311 and one of three pads 570 provided on the second semiconductor substrate 321 via different wires 580.

[0070] When multiple wires 580 are connected to a terminal, the multiple wires 580 do not have to be connected to the terminal separately. The multiple wires 580 may be bundled together at a relay point between the terminal and the pad 570. It is sufficient that the bundled multiple wires 580 and the terminal are electrically connected.

[0071] Hereinafter, second semiconductor substrate 321 , collector electrode 541 , emitter electrode 542 and gate electrode 543 will be collectively referred to as second semiconductor chip 320 .

[0072] <First conductive part> The first conductive part 530 is made of a metal material containing copper or the like. As shown in Fig. 4, the first conductive part 530 has a flat shape with a thin thickness in the z direction. The first conductive part 530 has a first conductive mounting surface 530a and a first conductive exposed surface 530b aligned in the z direction. The first conductive exposed surface 530b corresponds to the exposed surface.

[0073] 2 and 3, the first conductive portion 530 has a first mounting portion 531 and a second mounting portion 532 which have different areas along the x and y directions. The area of ​​the first conductive mounting surface 530a of the first mounting portion 531 is smaller than the area of ​​the first conductive mounting surface 530a of the second mounting portion 532. The area of ​​the first conductive exposed surface 530b of the first mounting portion 531 is smaller than the area of ​​the first conductive exposed surface 530b of the second mounting portion 532. The area of ​​any plane along the x and y directions of the first mounting portion 531 is smaller than the area of ​​any plane along the x and y directions of the second mounting portion 532.

[0074] The first mounting portion 531 and the second mounting portion 532 are aligned in the x direction. The first mounting portion 531 and the second mounting portion 532 are integrally connected. The first mounting portion 531 and the second mounting portion 532 are made of the same material.

[0075] 4, solder 700 is provided on first conductive mounting surface 530a of first mounting portion 531. First semiconductor chip 310 is mounted on first mounting portion 531 with collector electrode 541 in contact with solder 700. Furthermore, solder 700 is provided on emitter electrode 542 of first semiconductor chip 310.

[0076] Similarly, solder 700 is provided on first conductive mounting surface 530a of second mounting portion 532. Second semiconductor chip 320 is mounted on second mounting portion 532 with collector electrode 541 in contact with solder 700. Furthermore, solder 700 is provided on emitter electrode 542 of second semiconductor chip 320.

[0077] <Terminal 1> The first terminal 591 is a block body made of a material containing a metal such as copper.

[0078] First terminal 591 is mounted on first semiconductor chip 310 in a manner that makes contact with solder 700 provided on emitter electrode 542 of first semiconductor chip 310. Furthermore, solder 700 is provided on a portion of first terminal 591 on a side separated from first semiconductor chip 310 in the z direction.

[0079] <Terminal 2> The second terminal 592 is a block body made of a material containing a metal such as copper.

[0080] Second terminal 592 is mounted on second semiconductor chip 320 in a manner that makes contact with solder 700 provided on emitter electrode 542 of second semiconductor chip 320. Furthermore, solder 700 is provided on a portion of second terminal 592 on a side separated from second semiconductor chip 320 in the z direction.

[0081] <Second conductive part> The second conductive part 560 is made of a metal material containing copper or the like. As shown in Fig. 4, the second conductive part 560 has a flat shape with a small thickness in the z direction. The second conductive part 560 has a second conductive mounting surface 560a and a second conductive exposed surface 560b aligned in the z direction.

[0082] The second conductive portion 560 has a third mounting portion 561 and a fourth mounting portion 562 which have different areas in the x and y directions. The third mounting portion 561 has a similar shape to the first mounting portion 531. The fourth mounting portion 562 has a similar shape to the second mounting portion 532.

[0083] The area of ​​the second conductive mounting surface 560a of the third mounting portion 561 is smaller than the area of ​​the second conductive mounting surface 560a of the fourth mounting portion 562. The area of ​​the second conductive exposed surface 560b of the third mounting portion 561 is smaller than the area of ​​the second conductive exposed surface 560b of the fourth mounting portion 562.

[0084] The area of ​​second conductive mounting surface 560a of third mounting portion 561 may be equal to the area of ​​second conductive mounting surface 560a of fourth mounting portion 562. The area of ​​second conductive exposed surface 560b of third mounting portion 561 may be equal to the area of ​​second conductive exposed surface 560b of fourth mounting portion 562.

[0085] The third mounting portion 561 and the fourth mounting portion 562 are aligned in the x direction. The third mounting portion 561 and the fourth mounting portion 562 are integrally connected. The third mounting portion 561 and the fourth mounting portion 562 are made of the same material.

[0086] A second conductive portion 560 is mounted on the first terminal 591 and the second terminal 592 in a manner that makes contact with the solder 700 provided on the first terminal 591 and the solder 700 provided on the second terminal 592, respectively.

[0087] More specifically, the third mounting portion 561 is mounted on the first terminal 591 in a manner that makes contact with the solder 700 provided on a portion of the first terminal 591 that is away from the first semiconductor chip 310 in the z-direction.

[0088] The fourth mounting portion 562 is mounted on the second terminal 592 in such a manner that it contacts the solder 700 provided on the second terminal 592 at a portion spaced from the second semiconductor chip 320 in the z direction.

[0089] <Coating resin> The coating resin 600 is made of, for example, an epoxy resin. The coating resin 600 is molded by a transfer molding method. The coating resin 600 coats some of the components described above.

[0090] 4, the coating resin 600 has a substantially rectangular shape. The coating resin 600 has a first main surface 600a, a second main surface 600b, and four connecting surfaces that connect the first main surface 600a and the second main surface 600b, which are aligned in the z direction.

[0091] A first conductive exposed surface 530b of the first mounting portion 531 and a first conductive exposed surface 530b of the second mounting portion 532 are exposed from the first main surface 600a.

[0092] A second conductive exposed surface 560b of the third mounting portion 561 and a second conductive exposed surface 560b of the fourth mounting portion 562 are exposed from the second main surface 600b.

[0093] A part of the signal terminal 549 is exposed from one of the four connection surfaces. The signal terminal 549 exposed from the connection surface extends toward the substrate. The signal terminal 549 is electrically connected to the gate driver and the ECU mounted on the substrate.

[0094] <First semiconductor chip and second semiconductor chip> As described above, the first switch 521 is formed on the first semiconductor substrate 311. The second switch 522 is formed on the second semiconductor substrate 321. An IGBT is applied to each of the first switch 521 and the second switch 522.

[0095] As shown in FIG. 4, the thickness of the first semiconductor substrate 311 in the z direction is equal to the thickness of the second semiconductor substrate 321 in the z direction.

[0096] 2 to 4, the area of ​​first substrate surface 311a of first semiconductor substrate 311 is equal to the area of ​​third substrate surface 321a of second semiconductor substrate 321. The area of ​​second substrate surface 311b of first semiconductor substrate 311 is equal to the area of ​​fourth substrate surface 321b of second semiconductor substrate 321. The area of ​​any plane along the x direction and y direction of first semiconductor substrate 311 is equal to the area of ​​any plane along the x direction and y direction of second semiconductor substrate 321.

[0097] The number of first switches 521 formed on the first semiconductor substrate 311 is equal to the number of second switches 522 formed on the second semiconductor substrate 321. The number of first switches 521 provided on the first semiconductor chip 310 is equal to the number of second switches 522 provided on the second semiconductor chip 320.

[0098] <Signal terminal layout> As described above, the area of ​​any plane along the x and y directions of first mounting portion 531 is smaller than the area of ​​any plane along the x and y directions of second mounting portion 532.

[0099] 3, an overlapping region 800 where the projection region of the first mounting portion 531 in the y direction and the projection region of the second mounting portion 532 in the x direction overlap is an empty space. A signal terminal 549 is provided in this overlapping region 800.

[0100] As described above, signal terminal 549 includes gate terminal 543a and Kelvin emitter terminal 548 which are commonly connected to first semiconductor chip 310 and second semiconductor chip 320. Note that overlapping region 800 is indicated by hatching in the drawing.

[0101] <Heat dissipation from semiconductor chip to mounting area> As described above, the thickness in the z direction of first mounting portion 531 and the thickness in the z direction of second mounting portion 532 are equal. The area of ​​any plane along the x direction and y direction of first mounting portion 531 is smaller than the area of ​​any plane along the x direction and y direction of second mounting portion 532. In other words, it can be said that the volume of first mounting portion 531 is smaller than the volume of second mounting portion 532.

[0102] As described above, the number of first switches 521 formed on the first semiconductor substrate 311 is equal to the number of second switches 522 formed on the second semiconductor substrate 321 .

[0103] The heat dissipation from second semiconductor chip 320 to second mounting portion 532 is higher than the heat dissipation from first semiconductor chip 310 to first mounting portion 531. Heat is dissipated more slowly from first semiconductor chip 310 than from second semiconductor chip 320.

[0104] In other words, the heat dissipation property of the second stack 340 in which the second semiconductor chip 320 is mounted on the second mounting portion 532 is higher than the heat dissipation property of the first stack 330 in which the first semiconductor chip 310 is mounted on the first mounting portion 531. The first stack 330 dissipates heat more slowly than the second stack 340.

[0105] <Action and effect> As described above, the temperature sensitive diode 523 that measures the temperature of the first switch 521 is provided on the first semiconductor substrate 311. The current sensor 545 that measures the current flowing through the second switch 522 is provided on the second semiconductor substrate 321.

[0106] According to this, a configuration is disclosed in which a current sensor 545 is mounted on a second stack 340 to measure a current flowing through a second switch 522 as a physical quantity of a second semiconductor chip 320 .

[0107] As described above, the first switch 521 and the second switch 522 are connected in parallel. The first switch 521 and the second switch 522 are simultaneously energized.

[0108] As described above, the heat dissipation from second semiconductor chip 320 to second mounting portion 532 is higher than the heat dissipation from first semiconductor chip 310 to first mounting portion 531. The temperature of first semiconductor chip 310 is more likely to become higher than the temperature of second semiconductor chip 320.

[0109] Therefore, the temperature of first switch 521 is more likely to become higher than the temperature of second switch 522. Accordingly, the on-resistance of first switch 521 is more likely to become higher than the on-resistance of second switch 522. The on-resistance of second switch 522 is more likely to become lower than the on-resistance of first switch 521. Therefore, a current flows more easily through second switch 522 than through first switch 521.

[0110] This makes it possible to estimate the temperature of second switch 522 based on the temperature of first switch 521. It makes it possible to estimate the value of the current flowing through first switch 521 based on the current value of the current flowing through second switch 522. In this way, a configuration that detects the amount of current flowing through second switch 522 rather than the current flowing through first switch 521 is an effective configuration.

[0111] In other words, the temperature of second semiconductor chip 320 can be estimated based on the temperature of first semiconductor chip 310. The value of the current flowing through first semiconductor chip 310 can be estimated based on the current value of the current flowing through second semiconductor chip 320.

[0112] As described above, the board is equipped with multiple ECUs and a gate driver (not shown) that controls the driving of the switches based on signals from the multiple ECUs. A signal terminal 549 is electrically connected to the gate driver and the ECU. Therefore, the driving of the first switch 521 and the second switch 522 is controlled based on the detection result of the temperature sensing diode 523 and the detection result of the current sensor 545.

[0113] This makes it possible to limit the driving of the first switch 521 and the second switch 522 before the first switch 521 and the second switch 522 become overheated. It makes it possible to limit the driving of the first switch 521 and the second switch 522 before an overcurrent flows through the first switch 521 and the second switch 522. The protection function of the inverter 500 is improved.

[0114] As described above, the signal terminal 549 is provided in an overlapping region 800 where the projection region in the y direction of the first mounting portion 531 and the projection region in the x direction of the second mounting portion 532 overlap. This reduces the size of the switch module 510 in the x direction.

[0115] As described above, signal terminal 549 includes gate terminal 543a and Kelvin emitter terminal 548 that are commonly connected to first semiconductor chip 310 and second semiconductor chip 320, respectively. This makes it possible to suppress an increase in the number of signal terminals 549. It also makes it possible to suppress an increase in the number of parts.

[0116] (First Modification) 5, plating 810 containing nickel, which has a lower thermal conductivity than copper, is applied to the first conductive mounting surface 530a and the surface including the first conductive mounting surface 530a of each of the first mounting portion 531 and the second mounting portion 532. The thickness of plating 810 applied to the surface of the second mounting portion 532 may be thinner than the thickness of plating 810 applied to the surface of the first mounting portion 531.

[0117] (Second Modification) As shown in FIG. 6, the area of ​​any plane along the x and y directions of the first mounting portion 531 and the area of ​​any plane along the x and y directions of the second mounting portion 532 may be equal.

[0118] In this case, it is sufficient that at least a part of the second mounting portion 532 contains a different material having a higher thermal conductivity than the material of the first mounting portion 531. In Fig. 6, the difference in the material of the first mounting portion 531 and the second mounting portion 532 is indicated by different hatching.

[0119] (Third Modification) 7, the thickness in the z direction of the second mounting portion 532 may be greater than the thickness in the z direction of the first mounting portion 531. Furthermore, the thickness in the z direction of the fourth mounting portion 562 may be greater than the thickness in the z direction of the third mounting portion 561.

[0120] (Fourth Modification) As shown in FIG. 8, at least a portion of the solder 700 provided between the second semiconductor chip 320 and the second mounting portion 532 may contain a different material having higher thermal conductivity than the solder 700 provided between the first semiconductor chip 310 and the first mounting portion 531.

[0121] In FIG. 8, the difference between the solder 700 provided between the first semiconductor chip 310 and the first mounting portion 531 and the solder 700 provided between the second semiconductor chip 320 and the second mounting portion 532 is indicated by different hatching.

[0122] (Fifth Modification) 9 and 10, the first laminate 330 and the second laminate 340 may be coated with different coating resins 600. The electrical connection between the first switch 521 and the second switch 522 is shown in FIG.

[0123] 11 , a collector electrode 541 of the first switch 521 is electrically and mechanically connected to a collector electrode 541 of the second switch 522 via a first mounting portion 531 and a second mounting portion 532. Similarly, an emitter electrode 542 of the first switch 521 is electrically and mechanically connected to an emitter electrode 542 of the second switch 522 via a third mounting portion 561 and a fourth mounting portion 562.

[0124] (Sixth Modification) As shown in Fig. 12, the first switch 521 and the second switch 522 may be connected in series. In that case, the first mounting portion 531 and the second mounting portion 532 are separate bodies as shown in Fig. 13.

[0125] 14, the first mounting portion 531 has a first joint 531a extending toward the fourth mounting portion 562. The fourth mounting portion 562 has a second joint 562a extending toward the third mounting portion 561 and connected to the first joint 531a. The first joint 531a and the second joint 562a are electrically and mechanically connected via solder 700. This electrically connects the first semiconductor chip 310 and the second semiconductor chip 320.

[0126] In addition, a collector electrode 541 of the first switch 521 is electrically and mechanically connected to the first power supply bus bar 301 via the second mounting portion 532. An emitter electrode 542 of the second switch 522 is electrically and mechanically connected to the second power supply bus bar 302 via the third mounting portion 561.

[0127] (Seventh Modification) 15, the thickness in the z direction of first semiconductor chip 310 may be greater than the thickness in the z direction of second semiconductor chip 320. In this case, when no current is applied between first semiconductor chip 310 and second semiconductor chip 320, the on-resistance of first semiconductor chip 310 is higher than the on-resistance of second semiconductor chip 320.

[0128] For this reason, when first semiconductor chip 310 and second semiconductor chip 320 are energized simultaneously, the temperature of first semiconductor chip 310 tends to become higher than the temperature of second semiconductor chip 320 .

[0129] The temperature of second semiconductor chip 320 can be estimated based on the temperature of first semiconductor chip 310. The value of the current flowing through first semiconductor chip 310 can be estimated based on the current value of the current flowing through second semiconductor chip 320.

[0130] (Eighth Modification) As shown in FIG. 16, the area of ​​any plane along each of the x and y directions of the first semiconductor chip 310 may be smaller than the area of ​​any plane along each of the x and y directions of the second semiconductor chip 320.

[0131] In that case, when no current is applied between first semiconductor chip 310 and second semiconductor chip 320, the on-resistance of first semiconductor chip 310 is higher than the on-resistance of second semiconductor chip 320.

[0132] For this reason, when first semiconductor chip 310 and second semiconductor chip 320 are energized simultaneously, the temperature of first semiconductor chip 310 tends to become higher than the temperature of second semiconductor chip 320 .

[0133] The temperature of second semiconductor chip 320 can be estimated based on the temperature of first semiconductor chip 310. The value of the current flowing through first semiconductor chip 310 can be estimated based on the current value of the current flowing through second semiconductor chip 320.

[0134] (Other variations) The semiconductor chips included in the switch module 510 are not limited to the first semiconductor chip 310 and the second semiconductor chip 320. The switch module 510 may include another semiconductor chip in addition to the first semiconductor chip 310 and the second semiconductor chip 320. In that case, the temperature sensitive diode 523 may not be provided in the another semiconductor chip. The current sensor 545 may not be provided in the another semiconductor chip.

[0135] As another example, the first switch 521 and the second switch 522 may be made of different types of semiconductor elements. [Explanation of symbols]

[0136] 310...first semiconductor chip, 320...second semiconductor chip, 330...first laminate, 340...second laminate, 521...first switch, 522...second switch, 523...temperature sensitive diode, 530b...first conductive exposed surface, 531...first mounting portion, 532...second mounting portion, 543a...gate terminal, 548...Kelvin emitter terminal, 545...current sensor, 549...signal terminal, 700...solder, 800...overlapping area

Claims

1. a first stack (330) including a first semiconductor chip (310) having a first switch (521) and a first mounting portion (531) for mounting the first semiconductor chip; a second stack (340) including a second semiconductor chip (320) having a second switch (522) and a second mounting portion (532) for mounting the second semiconductor chip, the second stack (340) having a higher heat dissipation property than the first stack; a temperature detector (523) provided on the first stack of the first stack and the second stack, for detecting a temperature of the first switch; a current detector (545) provided in the second stack of the first stack and the second stack, for detecting a current flowing through the second switch; A signal terminal (549) connected to the first switch and the second switch; and a coating resin (600) that covers the first laminate, the second laminate, and the signal terminal, and from which a portion of the signal terminal is exposed; The signal terminals include a terminal (546, 547) to which the temperature detector for detecting the temperature of the first switch is connected and a current sensor terminal (545a) to which the current detector for detecting the current flowing through the second switch is connected, and the switch module does not include a terminal for detecting the temperature of the second switch and a terminal for detecting the current of the first switch.

2. 2. The switch module according to claim 1, wherein the first switch and the second switch are connected in parallel.

3. the first mounting portion and the second mounting portion are formed of the same material, 3. The switch module according to claim 1, wherein a volume of the first mounting portion is smaller than a volume of the second mounting portion.

4. Each of the first mounting portion and the second mounting portion has an exposed surface (530b) exposed from the coating resin, the first stack and the second stack are aligned in a first direction along the exposed surface, The switch module of claim 3, wherein a portion of the signal terminal is located in an overlapping area (800) where a projection area in a second direction perpendicular to the first direction along the exposed surface of the first mounting portion overlaps with a projection area in the first direction of the second mounting portion.

5. 5. The switch module according to claim 4, wherein the signal terminals include a common terminal (543a, 548) electrically connected to the first switch and the second switch, respectively.

6. At least a part of a material forming the second mounting portion includes a material different from a material forming the first mounting portion, 6. The switch module according to claim 1, wherein the second mounting portion has a higher thermal conductivity than the first mounting portion.

7. a bonding member (700) provided between the first semiconductor chip and the first mounting portion to bond the first semiconductor chip to the first mounting portion, and provided between the second semiconductor chip and the second mounting portion to bond the second semiconductor chip to the second mounting portion; A switch module described in any one of claims 1 to 6, wherein at least a portion of the joining material provided between the second semiconductor chip and the second mounting portion contains a different material having a higher thermal conductivity than the joining material provided between the first semiconductor chip and the first mounting portion.

8. 8. The switch module according to claim 1, wherein an on-resistance of the first semiconductor chip is higher than an on-resistance of the second semiconductor chip.

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