Mounting device and mounting method

Abstract

To supply a large amount of power and cooling air to a heater with a simple configuration.SOLUTION: A bonding apparatus 200 for mounting a large semiconductor chip 130 on a substrate 41, includes first and second bonding heads 10, 20 to which power and cooling air are respectively supplied, a large heater 60 attached to the lower part of the first bonding head 10, first and second large heater connection cables 18C, 28C connecting the large heater 60 to the first bonding head 10 and the second bonding head 20, respectively, and first and second large heater cooling air connection pipes 17C, 27C connecting the large heater 60 to the first bonding head 10 and the second bonding head 20, respectively.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a mounting apparatus and a mounting method for mounting semiconductor chips on a wafer or a substrate. [Background technology]

[0002] In recent years, semiconductor chips have become larger. For this reason, Patent Document 1 discloses a mounting device that has two chucks attached to one motor base, which sucks and holds a large collet, and picks up the large semiconductor chip. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 7228932 specification Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, when mounting a semiconductor chip on a wafer or substrate, after the semiconductor chip is rapidly heated by a heater and pressed and mounted onto the wafer or the like by a bonding tool, it is necessary to rapidly cool the heater and bonding tool in order to mount the next semiconductor chip. For this reason, a ceramic heater capable of rapid heating is used as the heater, and the heater is often configured so that cooling air is supplied to the heater.

[0005] However, as semiconductor chips become larger, the heaters also become larger. This means that the heat capacity of the heaters increases, and the power required for rapid heating also increases. The flow rate of cooling air required for cooling also increases. For this reason, there is a demand to supply large amounts of power and cooling air to the heaters.

[0006] Therefore, an object of the present disclosure is to make it possible to supply a large amount of electric power and a large amount of cooling air to a heater with a simple configuration. [Means for solving the problem]

[0007] The mounting device disclosed herein is a mounting device that mounts a semiconductor chip on a mounted object, and is characterized in that it comprises a plurality of mounting heads to which power and cooling air are supplied, a heater attached to the bottom of one of the mounting heads, power cables connecting the heater to each mounting head, and cooling air piping connecting the heater to each mounting head.

[0008] In this way, power and cooling air can be supplied to the heater from one mounting head and the other mounting heads via the power cable and cooling air pipe, making it possible to supply a large amount of power and cooling air to the heater with a simple configuration. This allows the heater to be heated and cooled quickly, making it possible to mount semiconductor chips in a short time.

[0009] In the mounting device of the present disclosure, the mounting heads other than the first mounting head may be disposed in the vicinity of the first mounting head and move following the first mounting head.

[0010] This makes it possible to shorten the power cables and cooling air piping attached to the other mounting heads, and the connecting cables and connecting piping between the heater and the other mounting heads.

[0011] In the mounting apparatus of the present disclosure, when one mounting head presses a semiconductor chip against an object to be mounted, another mounting head may press the semiconductor chip from above the heater.

[0012] This makes it possible to mount a semiconductor chip on a substrate for which the pressing force of one mounting head is insufficient.

[0013] In the mounting apparatus of the present disclosure, the mounted object may be a wafer, a substrate, or another semiconductor chip.

[0014] The mounting method disclosed herein is a mounting method for mounting a semiconductor chip on a mounted object, characterized in that a mounting apparatus having a plurality of mounting heads to which power and cooling air are supplied is prepared, a heater is attached to the bottom of one of the mounting heads, the heater and each mounting head are connected with a power cable and also connected with a cooling air pipe, power is supplied from each mounting head to the heater through each power cable to heat the semiconductor chip, while one mounting head presses the semiconductor chip against the mounted object, and then cooling air is supplied from each mounting head to the heater through each cooling air pipe to cool the heater.

[0015] In the mounting method of the present disclosure, a mounting head other than the first mounting head may be disposed in the vicinity of the first mounting head and moved following the first mounting head.

[0016] In the mounting method of the present disclosure, when one mounting head presses the semiconductor chip against the mounted object, another mounting head may press the semiconductor chip from above the heater.

[0017] In the mounting method of the present disclosure, the mounted object may be a wafer, a substrate, or another semiconductor chip. Effect of the Invention

[0018] The mounting device of the present disclosure has a simple configuration and can supply a large amount of power and cooling air to the heater, thereby enabling the heater to be heated and cooled quickly and enabling semiconductor chips to be mounted in a short time. [Brief description of the drawings]

[0019] [Figure 1] FIG. 2 is an elevational view showing the configuration of a bonding apparatus according to a reference example. [Diagram 2] FIG. 1 is an elevational view showing a bonding apparatus according to an embodiment. [Diagram 3] 4 is a flowchart showing the operation of the bonding apparatus according to the embodiment. [Figure 4]FIG. 13 is an explanatory diagram showing the operation of the bonding apparatus of the embodiment, illustrating a state in which the large semiconductor chip is pressed against the substrate by lowering the first nozzle while the large heater is heating the large semiconductor chip; [Diagram 5] FIG. 13 is an explanatory diagram showing the operation of the bonding apparatus of the embodiment, illustrating a state in which the first nozzle is raised and cooling air is caused to flow through the large heater to cool the large heater. [Figure 6] FIG. 13 is an elevational view showing the configuration of a bonding apparatus according to another embodiment. [Figure 7] FIG. 7 is an explanatory diagram showing the operation of the bonding apparatus shown in FIG. 6, illustrating a state in which a large semiconductor chip is heated by a large heater while a first nozzle is lowered to press the large semiconductor chip against a substrate, and a second nozzle is pressed against the large semiconductor chip from above the large heater. [Figure 8] FIG. 13 is a plan view showing the configuration of a bonding apparatus according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Hereinafter, a bonding apparatus 200, which is a mounting apparatus of an embodiment, will be described with reference to the drawings. Before describing the bonding apparatus 200 of the embodiment, a bonding apparatus 100 of a reference example will be described. In the following description, as shown in FIG. 1, the direction in which the guide rail 30 extends parallel to the bonding stage 40 is the Y direction, the direction perpendicular to the Y direction in the horizontal plane is the X direction, and the up-down direction is the Z direction.

[0021] 1, the bonding apparatus 100 includes a bonding stage 40, one guide rail 30, an X-direction drive unit 31, first and second bonding heads 10 and 20, first and second small heaters 15 and 25, first and second small bonding tools 16 and 26, first and second cooling air supply pipes 17A and 27A, first and second cooling air connection pipes 17B and 27B, first and second power supply cables 18A and 28A, first and second connection cables 18B and 28B, and a control unit 50. The bonding apparatus 100 can mount two small semiconductor chips 110 and 120 on a substrate 41 simultaneously using the first and second bonding heads 10 and 20.

[0022] 1, the bonding stage 40 vacuum-attaches the substrate 41, which is the object to be mounted, to its upper surface. The substrate 41 may also have small semiconductor chips 110, 120 bonded to its upper surface. In this case, the object to be mounted is other small semiconductor chips 110, 120 bonded onto the substrate 41. The bonding stage 40 can also vacuum-attach a wafer, which is another object to be mounted, to its upper surface.

[0023] The guide rail 30 is a longitudinal member extending in the Y direction above the bonding stage 40. The guide rail 30 may be, for example, a Y direction rail of a gantry crane. The guide rail 30 is driven by an X direction drive unit 31 in an X direction perpendicular to the Y direction.

[0024] The first bonding head 10 includes a first body 11, a first Y-direction drive unit 14, and a first nozzle 12. The first bonding head 10 is a mounting head. The first Y-direction drive unit 14 is guided by a guide rail 30 and moves in the Y direction by a Y-direction drive motor housed inside.

[0025] The first body 11 is connected to the underside of the first Y-direction driving unit 14 and moves in the Y direction together with the first Y-direction driving unit 14. The first body 11 accommodates therein a first voice coil motor 13 that drives the first nozzle 12 in the Z direction.

[0026] The first nozzle 12 is composed of a first slider portion 12A that moves up and down by a first voice coil motor 13, and a first nozzle portion 12B that vacuum-adsorbs a first small heater 15 to its underside. A first cooling air supply pipe 17A and a first power supply cable 18A that supply cooling air and power from the outside are connected to the first nozzle 12.

[0027] First small heater 15 is fixed with bolts to the underside of first nozzle section 12B. In bonding apparatus 100 of the embodiment, the planar shape of first small heater 15 is substantially the same as the planar shape of first nozzle section 12B, and first small heater 15 is fixed with bolts so that the outer periphery coincides with the underside of first nozzle section 12B. First small heater 15 is a ceramic heater capable of rapid heating.

[0028] A first small bonding tool 16 is vacuum-attached to the lower surface of the first small heater 15. A small semiconductor chip 110 is vacuum-attached to the lower surface of the first small bonding tool 16.

[0029] The first nozzle 12 and the first small heater 15 are connected by a first cooling air connecting pipe 17B and a first connecting cable 18B. Cooling air is supplied to the first small heater 15 from the first nozzle 12 through the first cooling air connecting pipe 17B. In addition, power is supplied to the first small heater 15 from the first nozzle 12 through the first connecting cable 18B.

[0030] The second bonding head 20 includes a second body 21, a second Y-direction drive unit 24, and a second nozzle 22, similar to the first bonding head 10. The second body 21 and the second Y-direction drive unit 24 have the same configuration as the first body 11 and the first Y-direction drive unit 14 of the first bonding head 10 described above. The second nozzle 22 includes a second slider unit 22A and a second nozzle unit 22B, similar to the first nozzle 12, and a second small heater 25 is fixed to the lower surface of the second nozzle unit 22B with a bolt. A second small bonding tool 26 and a small semiconductor chip 120 are vacuum-adsorbed to the lower surface of the second small heater 25. A second cooling air supply pipe 27A and a second power supply cable 28A are connected to the second nozzle 22, and the second nozzle 22 and the second small heater 25 are connected to the second cooling air connection pipe 27B and the second connection cable 28B. The second bonding head 20 is another mounting head.

[0031] The control unit 50 is a computer including a CPU 51 and a memory 52 for storing control programs and control data. The first and second Y-direction drive units 14, 24, the X-direction drive unit 31, the first and second voice coil motors 13, 23, and the first and second small heaters 15, 25 are connected to the control unit 50 and operate according to commands from the control unit 50. The control unit 50 drives the first and second bonding heads 10, 20 in the XY directions using the first and second Y-direction drive units 14, 24 and the X-direction drive unit 31, and moves the first and second nozzles 12, 22 in the vertical direction using the first and second voice coil motors 13, 23 to mount two small semiconductor chips 110, 120 on the substrate 41 at the same time.

[0032] Next, a bonding apparatus 200, which is a mounting apparatus according to an embodiment, will be described with reference to Fig. 2. As with the bonding apparatus 100 described above, the bonding apparatus 200 includes a bonding stage 40, one guide rail 30, an X-direction drive unit 31, first and second bonding heads 10 and 20, first and second cooling air supply pipes 17A and 27A, first and second power supply cables 18A and 28A, and a control unit 50. These configurations are the same as those of the respective parts of the bonding apparatus 100 described above with reference to Fig. 1, and therefore description thereof will be omitted.

[0033] As shown in FIG. 2, the bonding apparatus 200 is obtained by removing the first and second small heaters 15, 25 that were fixed to the lower surfaces of the first and second nozzles 12, 22 of the bonding apparatus 100 with bolts, and fixing a large heater 60 to the center of the lower surface of the first nozzle 12 with bolts. The planar size of the large heater 60 is the same as the planar size of the large semiconductor chip 130, and is larger than the planar size of the lower surface of the first nozzle 12. Therefore, when the large heater 60 is fixed to the lower surface of the first nozzle 12, the outer periphery of the large heater 60 protrudes outward from the first nozzle 12. A large bonding tool 65 is vacuum-adsorbed to the lower surface of the large heater 60. The large semiconductor chip 130 is vacuum-adsorbed to the lower surface of the large bonding tool 65.

[0034] The large heater 60 is called "large" to distinguish it from the first and second small heaters 15 and 25 described above, but it does not necessarily have to be larger than the first and second small heaters 15 and 25. For example, in the case of a process that requires more power or a larger flow rate of cooling air than conventional heaters, the present invention can be applied regardless of the size of the heater. Similarly, the large bonding tool 65 and the large semiconductor chip 130 do not necessarily have to be larger than the small bonding tools 16 and 26 and the small semiconductor chips 110 and 120, respectively.

[0035] The first nozzle 12 and the large heater 60 are connected by a first large heater cooling air connection pipe 17C, which is a cooling air pipe, and a first large heater connection cable 18C, which is a power cable. The second nozzle 22 and the large heater 60 are connected by a second large heater cooling air connection pipe 27C, which is a cooling air pipe, and a second large heater connection cable 28C, which is a power cable. The large heater 60 is supplied with cooling air from the first and second nozzles 12 and 22 through the first and second large heater cooling air connection pipes 17C and 27C. The large heater 60 is supplied with power from the first and second nozzles 12 and 22 through the first and second large heater connection cables 18C and 28C. The large heater 60 is connected to the control unit 50 and operates according to commands from the control unit 50.

[0036] The second bonding head 20 is disposed in a position where the second nozzle 22 is spaced apart from the first nozzle 12 near the first nozzle 12 of the first bonding head 10. The second nozzle 22 is also positioned slightly above the first nozzle 12, and a gap is provided between the bottom surface of the second nozzle 22 and the top surface of the large heater 60.

[0037] The first bonding head 10 is a master bonding head that moves to a bonding position where the large semiconductor chip 130 is bonded in response to a command from the control unit 50. The first bonding head 10 is also a mounting head. The second bonding head 20 is a slave bonding head that is disposed near the first bonding head 10 and moves following the first bonding head 10. The second bonding head 20 is another mounting head. As explained above, there is a gap between the lower surface of the second nozzle 22 of the second bonding head 20 and the upper surface of the large heater 60, and the second nozzle 22 does not press against the large heater 60.

[0038] Next, the operation of the bonding apparatus 200 will be described with reference to Figures 3 to 5. The operation of the bonding apparatus 200 is realized by the CPU 51 of the control unit 50 executing a control program stored in the memory 52. ​​Before operating as the bonding apparatus 200, the first and second small heaters 15, 25 of the bonding apparatus 100 shown in Figure 1 are removed, and the large heater 60 is fixed to the lower surface of the first nozzle 12 with bolts. Then, the large bonding tool 65 is vacuum-adsorbed to the lower surface of the large heater 60 to configure the bonding apparatus 200 shown in Figure 2.

[0039] 3, the control unit 50 moves the first and second bonding heads 10 and 20 onto a pickup stage (not shown) using the first and second Y-direction drive units 14 and 24 and the X-direction drive unit 31. At this time, the control unit 50 operates the first Y-direction drive unit 14 and the X-direction drive unit 31 to move the first bonding head 10 in the XY directions so that the center of the first nozzle 12 of the first bonding head 10 overlaps with the center of the large semiconductor chip 130 placed on the pickup stage. In addition, the control unit 50 moves the second bonding head 20 in the XY directions following the first bonding head 10 using the second Y-direction drive unit 24.

[0040] Then, when the center of the first nozzle 12 reaches the center position of the large semiconductor chip 130, the control unit 50 operates the first voice coil motor 13 to lower the first nozzle 12, and vacuum-adsorbs the large semiconductor chip 130 onto the lower surface of the large bonding tool 65. Then, the control unit 50 operates the first voice coil motor 13 to raise the first nozzle 12, and picks up the large semiconductor chip 130 from the pickup stage. At this time, the control unit 50 does not lower the second nozzle 22, but holds the second nozzle 22 at a height where the lower surface is slightly higher than the upper surface of the large semiconductor chip 130. This position of the second nozzle 22 is called the standby position.

[0041] Next, as shown in step S102 of Fig. 3, the control unit 50 causes the first and second Y-direction drive units 14 and 24 and the X-direction drive unit 31 to move the first and second bonding heads 10 and 20 onto the bonding stage 40. Then, as shown in step S103 of Fig. 3, the control unit 50 operates the first Y-direction drive unit 14 and the X-direction drive unit 31 to move the center of the first nozzle 12 to the center of the bonding position. In addition, the control unit 50 moves the second bonding head 20 following the first bonding head 10, and places the second nozzle 22 in a standby position.

[0042] Next, as shown in step S104 of Fig. 3 and Fig. 4, the control unit 50 supplies power from the first and second nozzles 12, 22 to the large heater 60 through the first and second large heater connection cables 18C, 28C, and operates the large heater 60 to rapidly heat the large semiconductor chip 130. Then, the control unit 50 operates the first voice coil motor 13, and as shown by the arrow 91 in Fig. 4, the first nozzle 12 is lowered to heat and press the large semiconductor chip 130 against the bonding position of the substrate 41, thereby mounting the large semiconductor chip 130 on the substrate 41. At this time, the control unit 50 does not operate the second voice coil motor 23, and holds the second nozzle 22 in the standby position.

[0043] Next, the control unit 50 releases the vacuum suction of the large semiconductor chip 130, and then operates the first voice coil motor 13 to raise the first nozzle 12, as shown in step S105 of Fig. 3 and arrow 92 in Fig. 5. Then, the control unit 50 supplies cooling air from the first and second nozzles 12, 22 to the large heater 60 through the first and second large heater cooling air connecting pipes 17C, 27C, to rapidly cool the large heater 60 and the large bonding tool 65.

[0044] After cooling of the large heater 60 and the large bonding tool 65 is completed, the control unit 50 proceeds to step S106 in Fig. 3. The control unit 50 determines whether or not large semiconductor chips 130 have been mounted at all bonding positions in step S106 in Fig. 3. If the control unit 50 determines NO in step S106 in Fig. 3, it returns to step S101 in Fig. 3, picks up the next large semiconductor chip 130, and bonds the next large semiconductor chip 130 at the next bonding position. On the other hand, if the control unit 50 determines YES in step S106 in Fig. 3, the control unit 50 ends the mounting operation.

[0045] As described above, the bonding device 200 of the embodiment supplies power to the large heater 60 from the first and second nozzles 12, 22 through the first and second large heater connection cables 18C, 28C, so that a large amount of power can be supplied to the large heater 60 at once. This allows the large heater 60 to be heated quickly. In addition, the bonding device 200 of the embodiment supplies cooling air to the large heater 60 from the first and second nozzles 12, 22 through the first and second large heater cooling air connection pipes 17C, 27C, so that a large amount of cooling air can be passed through the large heater 60 at once. This allows the large heater 60 to be cooled quickly. Therefore, the large heater 60 can be rapidly heated and cooled with a simple configuration, and the large semiconductor chip 130 can be mounted in a short time.

[0046] Furthermore, since the second bonding head 20 is configured to move following the first bonding head 10, the lengths of the first and second large heater connecting cables 18C, 28C and the first and second large heater cooling air connecting pipes 17C, 27C can be shortened, simplifying the configuration.

[0047] In the above embodiment, the large semiconductor chip 130 is mounted on the substrate 41, but the bonding apparatus 200 can also vacuum-suck a wafer onto the bonding stage 40 and mount the large semiconductor chip 130 on the wafer. Alternatively, the substrate 41 or wafer on which the large semiconductor chip 130 is mounted can be vacuum-sucked onto the bonding stage 40, and a second large semiconductor chip 130 can be stacked and mounted on the large semiconductor chip 130.

[0048] In the above description, the first and second cooling air supply pipes 17A, 27A and the first and second power supply cables 18A, 28A are respectively connected to the first and second nozzles 12, 22, but this is not limiting. For example, the first and second cooling air supply pipes 17A, 27A and the first and second power supply cables 18A, 28A may be respectively connected to the first and second main bodies 11, 21. In this case, the first large heater cooling air connection pipe 17C and the first large heater connection cable 18C may connect between the first main body 11 and the large heater 60, and the second large heater cooling air connection pipe 27C and the second large heater connection cable 28C may be configured to connect between the second main body 21 and the large heater 60.

[0049] Next, a bonding apparatus 300 according to another embodiment will be described with reference to Fig. 6. The same components as those of the bonding apparatuses 100 and 200 previously described with reference to Figs. 1 and 2 are designated by the same reference numerals and description thereof will be omitted.

[0050] In the bonding device 300, the bolt fixing position of the large heater 61 to the first nozzle 12 is offset. When the large heater 61 is fixed to the lower surface of the first nozzle 12, the standby position of the second nozzle 22 can be superimposed on the upper surface to the right of the large heater 61, as shown in FIG.

[0051] 7, when the control unit 50 lowers the first nozzle 12 to press the large semiconductor chip 130 against the bonding position of the substrate 41, the control unit 50 lowers the second nozzle 22 in cooperation with the first nozzle 12, as shown by arrow 94 in Fig. 7, and presses the upper surface of the large heater 60 with the lower surface of the second nozzle 22. As a result, the second nozzle 22 presses the large semiconductor chip 130 against the substrate 41 from above the large heater 60. In this way, in the bonding device 300, the first nozzle 12 and the second nozzle 22 press the large semiconductor chip 130 against the substrate 41.

[0052] According to the bonding apparatus 300 shown in FIGS. 6 and 7, it is possible to mount a large semiconductor chip 130 on the substrate 41, for which the pressing force provided by the first nozzle 12 alone is insufficient.

[0053] Next, a bonding apparatus 400 according to another embodiment will be described with reference to FIG.

[0054] 8, the bonding apparatus 400 includes, in addition to the first and second bonding heads 10 and 20, third and fourth bonding heads 70 and 80. The center portion of the large heater 62 is fixed with a bolt to the underside of the first nozzle 12. The first bonding head 10 is a master bonding head, and the second to fourth bonding heads 20, 70, and 80 are slave bonding heads that move following the first bonding head 10.

[0055] The third and fourth nozzles 72 and 82 of the third and fourth bonding heads 70 and 80 are connected to the large heater 62 by third and fourth large heater cooling air connection pipes 77C and 87C, which are cooling air piping, and third and fourth large heater connection cables 78C and 88C, which are power cables. Cooling air is supplied to the large heater 62 from the first to fourth nozzles 12, 22, 72, and 82 through the first to fourth large heater cooling air connection pipes 17C, 27C, 77C, and 87C. Electric power is supplied to the large heater 62 from the first to fourth nozzles 12, 22, 72, and 82 through the first to fourth large heater connection cables 18C, 28C, 78C, and 88C.

[0056] In the bonding device 400, power and cooling air are supplied to the large heater 62 from four large heater connection cables 18C, 28C, 78C, and 88C and four large heater cooling air connection pipes 17C, 27C, 77C, and 87C, respectively, so that a larger amount of cooling air and a larger amount of power can be supplied to the large heater 62 than in the case of the bonding device 200 described above. This allows the large heater 62 to be heated and cooled more rapidly. Therefore, the large semiconductor chip 130 can be mounted in an even shorter time.

[0057] In the above description, the bonding apparatus 400 has been described as having four bonding heads, the first to fourth bonding heads 10, 20, 70, and 80, but is not limited to this. For example, the bonding apparatus may be configured to have three bonding heads, or may have four or more bonding heads. [Explanation of symbols]

[0058] 10, 20, 70, 80 Bonding head, 12, 22, 72, 82 Nozzle, 13, 23 Voice coil motor, 14, 24 Y-direction drive unit, 15, 25 Small heater, 16, 26 Small bonding tool, 17A, 27A Cooling air supply pipe, 17B, 27B Cooling air connection pipe, 17C, 27C, 77C, 87C Large heater cooling air connection pipe, 18A, 28A Power supply cable, 18B, 28B Connection cable, 18C, 28C, 78C, 88C Large heater connection cable, 30 Guide rail, 31 X-direction drive unit, 40 Bonding stage, 41 Substrate, 50 Control unit, 51 CPU, 52 Memory, 60, 61, 62 Large heater, 65 Large bonding tool, 100, 200, 300, 400 Bonding equipment, 110, 120 small semiconductor chips, 130 large semiconductor chips.

Claims

1. A mounting apparatus for mounting a semiconductor chip on a mounting object, comprising: a plurality of mounting heads to which power and cooling air are supplied, and a heater attached to a lower portion of one of the mounting heads; a power cable connecting the heater and each of the mounting heads, and a cooling air pipe connecting the heater and each of the mounting heads; A mounting device comprising:

2. The mounting device according to claim 1 , the mounting heads other than the first mounting head are disposed in the vicinity of the first mounting head and move following the first mounting head; A mounting device comprising:

3. The mounting device according to claim 2, when the first mounting head presses the semiconductor chip against the mount target, the other mounting head presses the semiconductor chip from above the heater; A mounting device comprising:

4. The mounting device according to any one of claims 1 to 3, The object to be mounted is a wafer or a substrate or other semiconductor chip; A mounting device comprising:

5. A mounting method for mounting a semiconductor chip on a substrate, comprising the steps of: providing a mounting apparatus having a plurality of mounting heads to which power and cooling air are supplied; A heater is attached to the bottom of the mounting head of No.

1. the heater and each of the mounting heads are connected by a power cable, and the heater and each of the mounting heads are connected by a cooling air pipe; supplying power from each of the mounting heads to the heater through each of the power cables to heat the semiconductor chip, while pressing the semiconductor chip against the object to be mounted by one of the mounting heads, and then supplying cooling air from each of the mounting heads to the heater through each of the cooling air pipes to cool the heater; An implementation method characterized by:

6. The mounting method according to claim 5, disposing a mounting head other than the first mounting head in the vicinity of the first mounting head and moving the mounting head in accordance with the first mounting head; An implementation method characterized by:

7. The mounting method according to claim 6, when the first mounting head presses the semiconductor chip against the mount target, the other mounting head presses the semiconductor chip from above the heater; An implementation method characterized by:

8. The mounting method according to any one of claims 5 to 7, The object to be mounted is a wafer or a substrate or other semiconductor chip; An implementation method characterized by:

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