Semiconductor manufacturing apparatus, wafer supply device, and manufacturing method of semiconductor device

Abstract

To provide a technique capable of facilitating a management of a wafer.SOLUTION: A semiconductor manufacturing apparatus comprises: a cassette mounting stage to which a cassette into which a wafer ring is housed; a wafer holding stage that holds the wafer ring; a UV irradiation device that is provided to between the cassette mounting stage and the wafer holding stage; and a control device that is constructed so as to perform a UV irradiation of a dicing tape mounted to the wafer ring by the UV irradiation device when fetching out the wafer ring from the cassette and transporting the wafer ring to the wafer holding stage.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to semiconductor manufacturing equipment and is applicable, for example, to a die bonder that picks up a die from a wafer to which an ultraviolet-curing adhesive tape is attached. [Background technology]

[0002] One of the manufacturing processes for semiconductor devices is a peeling process in which the dies are peeled off from the dicing tape to which the wafer divided into dies is attached. In the peeling process, for example, the dies are pushed up from the back surface of the dicing tape by a push-up unit, peeled off one by one from the dicing tape held in a wafer supply unit, and picked up by a suction nozzle such as a collet provided on a pickup head or a bond head.

[0003] When an ultraviolet (UV) curable adhesive tape is used as the dicing tape, the dicing tape may be irradiated with UV light prior to the peeling step to reduce the adhesive strength of the adhesive in order to facilitate the pick-up operation (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2009-4403 A Summary of the Invention [Problem to be solved by the invention]

[0005] Since UV-irradiated Die Shin Tape deteriorates, if UV irradiation is performed on the Die Shin Tape before it is carried into the die bonder, it is necessary to manage the UV-irradiated Die Shin Tape (wafer).

[0006] An object of the present disclosure is to provide a technique capable of facilitating wafer management. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0007] A brief summary of representative aspects of this disclosure is as follows. That is, the semiconductor manufacturing equipment includes a cassette mounting table on which a cassette containing a wafer ring is placed, a wafer holding table that holds the wafer ring, a UV irradiator provided between the cassette mounting table and the wafer holding table, and a control device configured to UV irradiate a dicing tape attached to the wafer ring by the UV irradiator when the wafer ring is removed from the cassette and transported to the wafer holding table. Effect of the Invention

[0008] According to the present disclosure, it is possible to facilitate the management of wafers. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. [Diagram 2] FIG. 2 is a schematic front view of the vicinity of a pickup unit in the die bonder shown in FIG. [Diagram 3] FIG. 3 is a schematic side view of a bonding portion in the die bonder shown in FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view showing a main portion of the wafer holder shown in FIG. [Diagram 5] FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. [Figure 6] FIG. 6 is a block diagram showing a schematic configuration of a control system of the die bonder shown in FIG. [Figure 7] FIG. 7 is a flowchart showing the operation of the wafer supply unit. [Figure 8] FIG. 8 is a diagram showing the configuration and lighting range of a UV irradiator. [Figure 9] FIG. 9 is a diagram illustrating a UV irradiation method in the first modified example. [Figure 10] FIG. 10 is a flow chart showing the operation of the wafer supply unit in the second modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments and modifications will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that, in order to make the description clearer, the width, thickness, shape, etc. of each part may be shown in a schematic manner compared to the actual embodiment. Furthermore, the dimensional relationship between each element, the ratio of each element, etc. do not necessarily match between multiple drawings.

[0011] [Embodiment] The configuration of a die bonder as an embodiment of a semiconductor manufacturing apparatus will be described with reference to Fig. 1 to Fig. 4. Fig. 1 is a schematic top view showing an example of the configuration of a die bonder in an embodiment. Fig. 2 is a schematic front view of the vicinity of a pickup unit in the die bonder shown in Fig. 1. Fig. 3 is a schematic side view of a bonding unit in the die bonder shown in Fig. 1. Fig. 4 is a schematic cross-sectional view showing a main part of the wafer holder shown in Fig. 1.

[0012] The die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-rear direction of the die bonder 1, the X2-X1 direction is the left-right direction, and the Z1-Z2 direction is the up-down direction. The wafer supply unit 10 is disposed on the front side of the die bonder 1, and the bonding unit 40 is disposed on the rear side.

[0013] The wafer supply section 10 has a wafer transport section 11, a wafer holding table 12, and a peeling unit 13. The wafer transport section 11 is equipped with a wafer cassette lifter 111 as a cassette mounting table, a wafer correction chute 112, a wafer extractor 113, a UV irradiator 114, and a support table 115.

[0014] The wafer cassette lifter 111 moves a wafer cassette WC, which stores a plurality of wafer rings WR, up and down to a wafer transport height. The wafer correction chute 112 is provided on a support table 115 and aligns the wafer rings WR supplied from the wafer cassette lifter 111.

[0015] Wafer extractor 113 removes wafer ring WR from wafer cassette WC and supplies it to wafer holder 12, or removes it from wafer holder 12 and stores it in wafer cassette WC. Wafer extractor 113 includes guide rails 113a, a movable part 113b that moves along guide rails 113a, an arm part 113c that extends from movable part 113b, and a gripper 113d provided at the tip of arm part 113c.

[0016] UV irradiator 114 is provided on support table 115 which is arranged between wafer cassette lifter 111, on which wafer cassette WC is placed, and wafer holder 12. Details of UV irradiator 114 will be described later.

[0017] 4, the wafer holder 12 has an expand ring 121 that holds the wafer ring WR, and a support ring 122 that is held by the wafer ring WR and horizontally positions the dicing tape DT. The peeling unit 13 is disposed inside the support ring 122.

[0018] The wafer holder 12 is moved in the X1-X2 and Y1-Y2 directions by a drive unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 also rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 is moved in the vertical direction by a drive unit (not shown). The peeling unit 13, for example, pushes up multiple blocks to peel the die D from the dicing tape DT.

[0019] When peeling off the die D, the wafer holder 12 lowers the expand ring 121 holding the wafer ring WR. As a result, the dicing tape DT held by the wafer ring WR is stretched, widening the gap between the dies D, and the peeling unit 13 pushes up the dies D from below, improving the pick-up ability of the dies D.

[0020] A wafer W is adhered (attached) onto a dicing tape DT, and the wafer W is divided into a number of dies D. The wafer W is, for example, a semiconductor wafer, and the dies D are semiconductor chips. The dicing tape DT is an ultraviolet-curing adhesive tape. A film-like adhesive material DF called a die attach film (DAF) is adhered between the wafer W and the dicing tape DT. The adhesive material DF hardens when heated.

[0021] The pickup unit 20 has pickup heads 21A, 21B, X-drive units 23A, 23B, and a wafer recognition camera 24. The pickup heads 21A, 21B are provided with collets 22A, 22B that suction-hold the peeled die D at their tips. The pickup heads 21A, 21B pick up the die D from the wafer holder 12 and place it on the intermediate stages 31A, 31B. The X-drive units 23A, 23B move the pickup heads 21A, 21B in the X1-X2 direction. The pickup unit 20 has each drive unit (not shown) that raises and lowers, rotates, and moves the pickup heads 21A, 21B in the Y1-Y2 direction. The wafer recognition camera 24 grasps the pick-up position of the die D picked up from the wafer W and inspects the surface of the die D.

[0022] The intermediate stage unit 30 has intermediate stages 31A, 31B on which the die D is placed, and stage recognition cameras 34A, 34B for recognizing the die D on the intermediate stages 31A, 31B. The intermediate stages 31A, 31B have suction holes that adsorb the placed die D. The placed die D is temporarily held by the intermediate stages 31A, 31B. The intermediate stages 31A, 31B are both placement stages on which the die D is placed and pickup stages on which the die D is picked up.

[0023] The bonding section 40 has bond heads 41A, 41B, Y drive units 43A, 43B, substrate recognition cameras 44A, 44B, and bond stages 46A, 46B. The bond heads 41A, 41B are provided with collets 42A, 42B that suction-hold the die D at their tips. The Y drive units 43A, 43B move the bond heads 41A, 41B in the Y1-Y2 direction. The substrate recognition cameras 44A, 44B capture images of position recognition marks (not shown) on the substrate S to recognize the bond position. Here, the substrate S has a plurality of product areas (hereinafter referred to as package areas P) that will eventually become one package. A position recognition mark is provided for each package area P. The bond stages 46A, 46B are raised when the die D is placed on the substrate S, and support the substrate S from below. The bond stages 46A and 46B have suction ports (not shown) for vacuum-adsorbing the substrate S, and are capable of fixing the substrate S. The bond stages 46A and 46B have heating units (not shown) for heating the substrate S. The bonding unit 40 has drive units (not shown) for raising and lowering, rotating, and moving the bond heads 41A and 41B in the X direction.

[0024] With this configuration, the bond heads 41A, 41B correct the pick-up position and posture based on the imaging data of the stage recognition cameras 34A, 34B, and pick up the die D from the intermediate stages 31A, 31B. Then, the bond heads 41A, 41B bond the die D onto the package area P of the substrate S based on the imaging data of the substrate recognition cameras 44A, 44B, or bond the die D by stacking it on top of a die already bonded onto the package area P of the substrate S.

[0025] The transport section 50 has a transport lane 52 along which the substrate S moves. The substrate S moves in the X1 direction by driving nuts of transport claws provided on the transport lane 52 with ball screws provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply section 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading section 70 and hands the substrate S over to the substrate unloading section 70.

[0026] The substrate supplying section 60 removes the substrate S, which has been stored in the transport jig and carried in, from the transport jig and supplies it to the transporting section 50. The substrate unloading section 70 stores the substrate S transported by the transporting section 50 in the transport jig.

[0027] Next, the control unit 80 will be described with reference to Fig. 6. Fig. 6 is a block diagram showing a schematic configuration of a control system of the die bonder shown in Fig. 1.

[0028] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, an optical system 88, etc. The control unit 80 mainly includes a control / arithmetic unit 81 composed of a CPU (Central Processing Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 includes a main storage device 82a and an auxiliary storage device 82b. The main storage device 82a is composed of a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage device 82b is composed of a HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control data, image data, etc. required for control.

[0029] The input / output device 83 includes a monitor 83a for displaying the device status and information, a touch panel 83b for inputting an operator's instruction, a mouse 83c for operating the monitor 83a, and an image capture device 83d for capturing image data from the optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the wafer extractor 113 of the wafer supply unit 10, the ZY drive shaft of the bond head table, the drive unit of the peeling unit 13, and the like. The I / O signal control device 83f captures signals from and controls the signal unit 87. The signal unit 87 includes various sensors, switches and volumes for controlling the brightness of the lighting device, a UV irradiator 114, and the like. The optical system 88 includes the wafer recognition camera 24, the stage recognition cameras 34A and 34B, and the substrate recognition cameras 44A and 44B. The control / arithmetic unit 81 takes in necessary data via a bus line 84, performs calculations, controls the pickup head 21 and the like, and sends information to a monitor 83a and the like.

[0030] A part of the manufacturing process of a semiconductor device using the die bonder 1 (a method for manufacturing a semiconductor device) will be described with reference to Fig. 5 and Fig. 7. Fig. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Fig. 1. Fig. 7 is a flowchart showing the operation of a wafer supply unit. In the following description, the operation of each unit constituting the die bonder 1 is controlled by a control unit 80.

[0031] (Wafer loading process: process S1) The wafer cassette WC containing the wafer ring WR is loaded into the wafer cassette lifter 111. The wafer cassette lifter 111 raises the wafer cassette WC to a wafer transport height. The wafer extractor 113 grips the wafer ring WR with the gripper 113d and removes it from the wafer cassette WC (step S11). The wafer extractor 113 then aligns the wafer ring WR through the wafer correction chute 112. At this time, the UV irradiator 114 irradiates ultraviolet light from below (the back side) of the dicing tape DT held by the wafer ring WR (step S12). The wafer extractor 113 supplies (carries) the wafer ring WR to the wafer holder 12 (step S13). At this time, the wafer holder 12 is located near the X1 side of the wafer correction chute 112. The wafer holder 12 is then moved to a pick-up position (step S14).

[0032] (Substrate loading process: Process S2) The transport jig storing the substrate S is supplied (input) to the substrate supply section 60. In the substrate supply section 60, the substrate S stored in the transport jig is removed from the transport jig. Then, the substrate S is supplied (carried in) to the bonding section 40 via the transport section 50.

[0033] (Pickup process: process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 24, and the die D is positioned and its surface inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder, and the die is positioned. Note that the die position reference point is previously held at a predetermined position of the wafer holder 12 as the initial setting of the device. The image data is processed to inspect the surface of the die D.

[0034] The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup heads 21A, 21B. The die D peeled off from the dicing tape DT is attracted to and held by collets 22A, 22B provided on the pickup heads 21A, 21B, and is transported to and placed on the intermediate stages 31A, 31B.

[0035] The die D on the intermediate stages 31A, 31B is photographed by the stage recognition cameras 34A, 34B, and the die D is positioned and its surface is inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, θ directions) of the die D on the intermediate stages 31A, 31B from the die position reference point of the die bonder, and the die is positioned. Note that the die position reference point is previously held at a predetermined position of the intermediate stages 31A, 31B as the initial setting of the device. The image data is processed to inspect the surface of the die D.

[0036] After transporting the die D to the intermediate stages 31A and 31B, the pickup heads 21A and 21B are returned to the wafer holder 12. The next die D is peeled off from the dicing tape DT according to the procedure described above, and thereafter, the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

[0037] (Bond process: Process S4) The substrate S is transported to the bond stages 46A, 46B by the transport unit 50. The substrate S placed on the bond stages 46A, 46B is imaged by the substrate recognition cameras 44A, 44B, and the substrate S is positioned and its surface inspected based on the image data acquired by the image capture. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device. The image data is processed to inspect the surface of the substrate S.

[0038] The suction positions of the bond heads 41A, 41B are corrected based on the deviation of the die D on the intermediate stages 31A, 31B calculated in step S3, and the die D is suctioned by the collets 42A, 42B. The bond heads 41A, 41B that have sucked the die D from the intermediate stages 31A, 31B bond the die D to a predetermined location on the substrate S supported by the bond stages 46A, 46B. Here, the predetermined location on the substrate S is the package area P of the substrate S, or an area where an element is already placed and an element is to be bonded in addition to the already placed element, or a bonding area of ​​an element to be laminated and bonded. The substrate recognition cameras 44A, 44B photograph the die D bonded to the substrate S, and an inspection is performed based on the image data obtained by photographing to determine whether the die D has been bonded at the desired location.

[0039] The bond heads 41A, 41B that have bonded the die D to the substrate S are returned to the intermediate stages 31A, 31B. Following the procedure described above, the next die D is picked up from the intermediate stages 31A, 31B and bonded to the substrate S. This is repeated until a die D is bonded to every package area P of the substrate S.

[0040] (Substrate unloading process: Process S5) The transfer section 50 transfers the substrate S to which the die D is bonded from the bonding section 40 to the substrate unloading section 70. In the substrate unloading section 70, the substrate S is taken out and stored in a transfer jig, and then the substrate S is unloaded. The transfer jig in which the substrate S is stored is unloaded from the die bonder 1.

[0041] (Wafer unloading process: Process S6) After all dies D to be picked up in step S3 have been picked up, wafer holder 12 is moved to the vicinity of the X1 side of wafer correction chute 112 (step S61). Wafer extractor 113 grips wafer ring WR with gripper 113d and carries it out to wafer cassette WC (step S62). When all wafer rings have been stored, wafer cassette lifter 111 lowers wafer cassette WC to the carrying-out height.

[0042] As described above, the die D is mounted on the substrate S and is carried out from the die bonder 1. Thereafter, for example, a transport jig storing the substrate S on which the die D is mounted is transported to a wire bonding process, and the electrodes of the die D are electrically connected to the electrodes of the substrate S via Au wires or the like. Then, the substrate S is transported to a molding process, and the die D and the Au wires are sealed with molding resin (not shown), thereby completing a semiconductor package.

[0043] In the case of stacked bonding, following the wire bonding process, a transport jig on which a substrate S on which a die D is mounted is loaded and stored is transported into a die bonder, and the die D is stacked on the die D mounted on the substrate S. Then, after being transported out of the die bonder, the die D is electrically connected to the electrodes of the substrate S via Au wires in a wire bonding process. The dies D above the second stage are peeled off from the dicing tape DT by the above-mentioned method, transported to the bonding section, and stacked on the dies D. After the above process is repeated a predetermined number of times, the substrate S is transported to a molding process, and a stacked package is completed by sealing the multiple dies D and the Au wires with molding resin (not shown).

[0044] The UV irradiator 114 will be described with reference to Fig. 8. Fig. 8 is a diagram showing the configuration and lighting range of the UV irradiator.

[0045] The UV irradiator 114 is equipped with a plurality of UV light emitting diodes (LEDs) 114a. The UV light emitting diodes 114a are arranged in a straight line in a direction (Y1-Y2 direction) perpendicular to the transport direction (X1-X2 direction) of the transported wafer ring WR. In other words, the UV irradiator 114 is bar-shaped and long in the Y1-Y2 direction. The UV irradiator 114 is disposed within a range of length equal to or shorter than the diameter of the wafer W attached to the wafer ring WR. Note that since the dies at the edge of the wafer W are not targeted for pick-up, there is no need to irradiate them with UV.

[0046] The UV irradiator 114 is composed of a plurality of channels, and each channel is composed of one or a plurality of UV light emitting diodes 114a. For example, as shown in FIG. 8, the UV irradiator 114 is composed of five channels. The first channel CH1 is composed of four UV light emitting diodes 114a in the center. The second channel CH2 is composed of two adjacent UV light emitting diodes 114a sandwiching the first channel CH1. The third channel CH3 is composed of two adjacent UV light emitting diodes 114a sandwiching the second channel CH2. The fourth channel CH4 is composed of two adjacent UV light emitting diodes 114a sandwiching the third channel CH3. The fifth channel CH5 is composed of two adjacent UV light emitting diodes 114a sandwiching the fourth channel CH4.

[0047] The UV irradiator 114 can be turned on and off for each channel. The UV irradiator 114 can also set the irradiation time and irradiation intensity for each channel. The UV irradiator 114 can also set the number of channels and the channel range. This makes it possible to change the UV irradiation conditions for each channel based on the peeling results such as pickup failures.

[0048] The wafer W mounted on the wafer ring WR is transported above the UV irradiator 114, so the positional relationship between the wafer W and the UV irradiator 114 changes. Since the wafer W is circular, the area that requires UV irradiation changes stepwise, and there are also areas where it is preferable not to irradiate with UV. The channel that the UV irradiator 114 lights up is changed depending on the positional relationship between the wafer W and the UV irradiator 114. The wafer W is transported at a pitch feed rate, and the UV irradiator 114 is turned on intermittently. In other words, the UV irradiator 114 is turned off while the wafer W is moving, and turned on while the wafer W is stopped.

[0049] For example, as shown in FIG. 8, the wafer W is divided into nine regions R1 to R9 in the X1-X2 direction. When the UV irradiator 114 irradiates the regions R1 and R9, the first channel CH1 is turned on, and the second channel CH2, the third channel CH3, the fourth channel CH4, and the fifth channel CH5 are turned off. When the UV irradiator 114 irradiates the regions R2 and R8, the first channel CH1 and the second channel CH2 are turned on, and the third channel CH3, the fourth channel CH4, and the fifth channel CH5 are turned off. When the UV irradiator 114 irradiates the regions R3 and R7, the first channel CH1, the second channel CH2, and the third channel CH3 are turned on, and the fourth channel CH4 and the fifth channel CH5 are turned off. When the UV irradiator 114 irradiates the regions R4 and R6, the first channel CH1, the second channel CH2, the third channel CH3, and the fourth channel CH4 are turned on, and the fifth channel CH5 is turned off. When the UV irradiator 114 irradiates the region R5, it turns on the first channel CH1, the second channel CH2, the third channel CH3, the fourth channel CH4, and the fifth channel CH5.

[0050] In other words, the first channel CH1 is lit in the regions R1 to R9. The second channel CH2 is lit in the regions R2 to R8. The third channel CH3 is lit in the regions R3 to R7. The fourth channel CH4 is lit in the regions R4 to R6. The fifth channel CH5 is lit in the region R5.

[0051] According to this embodiment, it is possible to prevent the wafer from deteriorating over time by irradiating it with UV light after it is carried into the die bonder (just before the die D is peeled off from the die bonding tape DT). This makes it possible to facilitate wafer storage (wafer management).

[0052] According to this embodiment, UV irradiation is performed immediately before expanding (stretching of the die-sealing tape DT) on the wafer holder 12, so that the effect of oxygen inhibition is less likely to occur, and peeling failures can be reduced.

[0053] According to this embodiment, UV light emitting diodes are turned on in an area that matches the shape of the light receiving surface directly above the UV irradiator 114 (where the wafer W is located), so it is possible to prevent irradiation of areas that do not need to be irradiated (the dicing tape DT on which the wafer W is not attached). No physical mask is required to match the area where the wafer W is attached. It is possible to easily change the irradiation area when switching between different types of products. This makes it possible to handle a wide variety of products.

[0054] According to this embodiment, it is possible to change the UV irradiation conditions for each channel based on the peeling results such as pick-up failure, so it is possible to reduce die peeling failures. It is possible to detect the deterioration of the UV irradiator based on the peeling results such as pick-up failures. This makes it possible to adjust the UV irradiation conditions such as irradiation time and irradiation intensity to keep the peelability constant and reduce die peeling failures.

[0055] <Modification> Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned example and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

[0056] (First Modification) FIG. 9 is a diagram illustrating a UV irradiation method in the first modified example.

[0057] In the embodiment, an example in which all five channels of the UV irradiator 114 are used has been described, but it is not necessary to use all five channels. The first modified example is an example in which the fifth channel CH5 is not used.

[0058] (a) First, when the first row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on only the first channel CH1 to irradiate UV onto the dicing tape DT on the back surface of the wafers W. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels.

[0059] (b) Next, when the second row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on the first channel CH1 and the second channel CH2 to irradiate UV onto the dicing tape DT on the back surface of the wafers W. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels.

[0060] (c) Next, when the third row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on the first channel CH1, the second channel CH2, and the third channel CH3 to irradiate UV onto the dicing tape DT on the back surface of the wafers W. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels.

[0061] (d) Next, when the fourth row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on the first channel CH1, the second channel CH2, the third channel CH3, and the fourth channel CH4 to irradiate the dicing tape DT on the back surface of the wafers W with UV. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels. For the fifth to ninth rows of wafers W, the same operation as for the fourth row is performed.

[0062] (e) Next, when the tenth row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on the first channel CH1, the second channel CH2, and the third channel CH3 to irradiate UV onto the dicing tape DT on the back surface of the wafer W. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels.

[0063] (f) Next, when the eleventh row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on the first channel CH1 and the second channel CH2 to irradiate UV onto the dicing tape DT on the back surface of the wafer W. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels.

[0064] (g) Finally, when the twelfth row of wafers W is transported onto the UV irradiator 114, the UV irradiator 114 turns on the first channel CH1 to irradiate UV onto the dicing tape DT on the back surface of the wafer W. After a predetermined time has elapsed, the UV irradiator 114 turns off all channels.

[0065] (Second Modification) FIG. 10 is a flow chart showing the operation of the wafer supply unit in the second modified example.

[0066] In the embodiment, an example has been described in which UV irradiation is performed every time a wafer ring WR is taken out of the wafer cassette WC and transported to the wafer holder 12. The UV irradiation time for the dicing tape DT attached to the wafer ring WR is, for example, about 20 to 30 seconds. The UV irradiation time is much longer than the transport time for transporting the wafer ring WR from the wafer cassette WC to the wafer holder 12, and the transport time is determined by the UV irradiation time. In other words, the start of pick-up is delayed compared to the case in which UV irradiation is not performed.

[0067] In the second modified example, the first wafer ring WR in the wafer cassette WC is transported to the wafer holder while undergoing a UV irradiation operation as in the embodiment. For the second and subsequent wafer rings WR, the UV operation is performed in parallel with the production operation (pickup, bonding). After UV irradiation, the wafer ring WR is returned to the wafer cassette WC, and the next wafer ring WR is taken out and subjected to a UV irradiation operation. This operation is performed for all wafer rings WR in the wafer cassette WC.

[0068] During the pick-up (step S3) of the wafer W held by the first wafer ring WR, the following operation is performed.

[0069] The wafer extractor 113 grips the second wafer ring WR with the gripping portion 113d and removes it from the wafer cassette WC (step S11). Then, the UV irradiator 114 irradiates UV light from below (the back side) of the dicing tape DT held by the wafer ring WR (step S12). After that, the wafer extractor 113 stores the wafer ring WR gripped by the gripping portion 113d in the wafer cassette WC (step S15). Thereafter, the same operation is performed for the third through last wafer rings WR.

[0070] After the first wafer ring WR is carried out into the wafer cassette WC (step S62), the wafer extractor 113 removes the second wafer ring WR that has been UV irradiated from the wafer cassette WC (step S11). The wafer extractor 113 supplies the second wafer ring WR to the wafer holder 12 (step S13). Thereafter, the same operation is performed for the third through last wafer rings WR.

[0071] In the second modification, the UV irradiation operation of the dicing tape DT attached to the second and subsequent wafer rings WR is performed in parallel with the pick-up operation and the bonding operation, so that it is possible to reduce the decrease in production efficiency. The UV irradiator 114 does not have to be linear as in the embodiment. The UV irradiator 114 may be, for example, a device that irradiates in a circular shape, or a device that irradiates in a circular shape using a mask.

[0072] The disclosure made by the present inventors has been specifically described above based on embodiments and modified examples. However, it goes without saying that the present disclosure is not limited to the above-described embodiments and modified examples, and various modifications are possible.

[0073] For example, a light receiver may be provided in the UV irradiation direction (above the UV irradiator 114) to detect changes in UV irradiation intensity and provide feedback to the setting value of the UV irradiator 114.

[0074] The UV light emitting diodes of the UV irradiator 114 may be made replaceable for each channel. For example, the deterioration of a channel that is used frequently (the first channel CH1) progresses quickly, and the deterioration progresses differently for each channel. This eliminates the need to replace all the UV light emitting diodes.

[0075] Gas may be passed through the UV irradiator 114 to prevent overheating due to UV irradiation and adhesion of sublimates.

[0076] The integrated exposure amount may be calculated for each area of ​​the wafer W (dicing tape DT) from the transport speed of the wafer ring WR and the irradiation intensity, and fed forward to the peeling conditions.

[0077] Pickup may be performed in the order of the UV irradiated areas of the wafer.

[0078] The heat generated during UV irradiation may be used to shrink the bent dicing tape DT.

[0079] It may be possible to determine whether to irradiate the dicing tape DT to be mounted on the next wafer ring WR based on the number of dies to be produced. This makes it possible to stop UV irradiation on wafers that do not require UV irradiation, making wafer management easier.

[0080] In the embodiment, an example has been described in which the wafer W is transported at a pitch feed rate and the UV irradiator 114 is turned on intermittently, but the UV irradiator 114 may be turned on continuously while the wafer W is being fed at a pitch feed rate or stopped.

[0081] In the embodiment, an example has been described in which the light source of the UV irradiator 114 is configured with a UV light emitting diode, but a light source such as a metal halide or mercury may also be used.

[0082] In the embodiment, an example in which a die attach film is used has been described, but it is also possible to provide a preform portion for applying an adhesive to the substrate and not use a die attach film.

[0083] In the embodiment, a die bonder has been described in which a pick-up head picks up a die from a wafer supply unit, places it on an intermediate stage, and bonds the die placed on the intermediate stage to a substrate with a bonding head. However, the present invention is not limited to this, and can be applied to a die bonding apparatus that picks up a die from a die supply unit.

[0084] For example, the present invention can also be applied to a die bonder that does not have an intermediate stage and a pick-up head, and that bonds a die from a wafer supply section to a substrate with a bonding head.

[0085] The present invention can also be applied to a flip chip bonder that does not have an intermediate stage, picks up a die from a wafer supply unit, rotates the die pickup head upward, and delivers the die to the bonding head, which then bonds the die to a substrate.

[0086] In the embodiment, an example in which two pickup units, two intermediate stages, and two bonding units are provided has been described, but the present invention is not limited to this, and the number of pickup units, two intermediate stages, and two bonding units may be one each.

[0087] In the embodiment, a die bonder has been described as an example, but the present invention can also be applied to a semiconductor manufacturing device that places a picked-up die on a tray. [Explanation of symbols]

[0088] 1. Die bonder (semiconductor manufacturing equipment) 111: Wafer cassette lifter (cassette placement table) 114...UV irradiator 12 Wafer holder 21A, 21B Pickup head (head) 80... Control unit (control device)

Claims

1. a cassette placement table on which a cassette containing a wafer ring is placed; a wafer holder for holding the wafer ring; a head that is attached to the wafer ring and picks up the dies from a dicing tape to which a wafer divided into dies is attached; a UV irradiator provided between the cassette mounting table and the wafer holding table; a control device configured to irradiate the dicing tape with UV light using the UV irradiator when the wafer ring is removed from the cassette and transferred to the wafer holder; A semiconductor manufacturing apparatus comprising:

2. 2. The semiconductor manufacturing apparatus according to claim 1, The UV irradiator is a linear light source and is a semiconductor manufacturing device that is configured with multiple channels.

3. 3. The semiconductor manufacturing apparatus according to claim 2, The UV irradiator of the semiconductor manufacturing device can be turned on and off for each channel.

4. 4. The semiconductor manufacturing apparatus according to claim 3, A semiconductor manufacturing device in which the range of the channel is variable.

5. 3. The semiconductor manufacturing apparatus according to claim 2, The UV irradiator is a semiconductor manufacturing device in which irradiation time and irradiation intensity can be set for each channel.

6. 6. The semiconductor manufacturing apparatus according to claim 5, The control device is configured to change at least one of the settings of the irradiation time and the irradiation intensity based on a pick-up result.

7. 3. The semiconductor manufacturing apparatus according to claim 2, The semiconductor manufacturing apparatus is configured such that the control device pitch-feeds the wafer ring and turns on the UV irradiator continuously even when the wafer ring is stopped.

8. 3. The semiconductor manufacturing apparatus according to claim 2, The control device is configured to pitch-feed the wafer ring, turn off the UV irradiator during pitch-feed, and turn on the UV irradiator when the wafer ring is stopped.

9. 2. The semiconductor manufacturing apparatus according to claim 1, The control device is a semiconductor manufacturing apparatus configured to irradiate UV light onto the die tape attached to the second or subsequent wafer rings stored in the cassette in parallel with the operation of picking up a die from the die tape attached to the first wafer ring.

10. a cassette placement table on which a cassette containing a wafer ring with a dicing tape attached thereto is placed; a wafer holder for holding the wafer ring; a transfer unit that removes the wafer ring from the cassette and transfers it to the wafer holder; a UV irradiator provided between the cassette mounting table and the wafer holding table for irradiating the transported dicing tape with UV light; A wafer supplying apparatus comprising:

11. A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus including a cassette mounting stage on which a cassette containing a wafer ring having a dicing tape attached thereto is mounted, a wafer holding stage that holds the wafer ring, and a UV irradiator provided between the cassette mounting stage and the wafer holding stage, irradiating the dicing tape with UV light by the UV irradiator when the wafer ring is removed from the cassette and transferred to the wafer holder; picking up the dies from the dicing tape to which the wafer divided into dies is attached; A method for manufacturing a semiconductor device comprising the steps of:

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