Semiconductor device manufacturing equipment

Abstract

A manufacturing device (10) for manufacturing semiconductor devices can further improve the bonding quality of a chip to an object, comprising: a wafer holding device (12), a PU device (14) having a PU head (40) for holding an object chip (100) in a non-contact manner, an energy irradiation device (16) for irradiating energy from the back side of a dicing tape (130) toward the object chip (100) to reduce the adhesive force of the dicing tape (130), and a controller (22), wherein the adhesive layer of the dicing tape (130) is a self-peeling adhesive layer whose adhesive force decreases with the irradiation of the energy and causes the object chip (100) to float a small distance, and the controller (22) controls the position of the PU head (40) during the detachment preparation period so that the object chip (100) and the PU head (40) do not contact each other even if the object chip (100) floats.

Description

Technical Field

[0001] The present invention discloses a manufacturing device for manufacturing a semiconductor device by bonding a chip to a substrate. Background Art

[0002] In flip-chip mounting, the chip is bonded to the substrate or another chip by pressing its bonding surface against the target. The quality of the bond between the chip and the target depends significantly on the quality of the bonding surface. In particular, when performing room-temperature bonding, where the chip is bonded to the target at room temperature using atomic or molecular bonding, the chip's bonding surface must maintain high quality.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2008-130742 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] However, the quality of the bonding surface can sometimes deteriorate during the chip pickup process. Specifically, the chip, prior to bonding, is typically held on the dicing tape with the bonding surface facing upward. Conventional pickup devices extract and hold the chip from the dicing tape, mechanically contacting the chip's bonding surface during the pickup process. This mechanical contact can sometimes cause mechanical or chemical changes to the chip's bonding surface, resulting in a decrease in the quality of the bond with the intended target.

[0008] Patent Document 1 discloses a method comprising: a dicing step in which a dicing tape, whose adhesive force is reduced by applying a stimulus, is attached to a wafer, and then the wafer is diced into individual chips; an adhesive force reduction step in which a stimulus is applied to the dicing tape to reduce its adhesive force; and a picking step in which the chips are suctioned and picked up using a suction nozzle. This technique reduces the adhesive force of the dicing tape before picking up, allowing the chips to be picked up with minimal force.

[0009] However, in the technology of Patent Document 1, the suction nozzle also mechanically contacts the bonding surface of the chip during pickup, and therefore cannot prevent degradation of the bonding surface and deterioration of the bonding quality of the chip to the object.

[0010] Therefore, this specification discloses a semiconductor device manufacturing apparatus capable of further improving the bonding quality of a chip to an object.

[0011] Technical means to solve the problem

[0012] The manufacturing device of the semiconductor device disclosed in this specification is a manufacturing device for manufacturing semiconductor devices by bonding a chip having a bonding surface and a holding surface facing the bonding surface to a bonding object, and the manufacturing device of the semiconductor device is characterized in that it includes: a wafer holding device for holding one or more chips whose holding surface is adhered to the surface of a dicing tape together with the dicing tape; a picking device having a picking head for holding a chip as a picking object, that is, an object chip, among the one or more chips in a non-contact manner, and picking up the object chip from the dicing tape; an energy irradiation device for irradiating the chip from the back side of the dicing tape toward the object The object chip is selectively irradiated with energy as light or heat in an area to reduce the adhesion of the cutting tape; and a controller controls the operation of the pickup device and the energy irradiation device, the adhesive layer of the cutting tape is a self-peeling adhesive layer whose adhesion decreases with the irradiation of the energy and causes the object chip to float a small distance, and the controller controls the position of the pickup head during the period from the time when the pickup head approaches the object chip for the pickup to the time when the object chip is removed from the cutting tape so that the object chip and the pickup head will not come into contact even if the object chip floats.

[0013] In the above case, the controller may raise the pickup head during the removal preparation to offset the floating of the target chip, thereby maintaining a constant distance between the suction surface of the pickup head and the bonding surface of the target chip, that is, an inter-surface distance.

[0014] In addition, the picking head may pull the object chip toward the adsorption surface when the inter-surface distance is less than the maximum effective distance and greater than the neutral distance, and press the object chip in the direction away from the adsorption surface when the inter-surface distance is less than the neutral distance. The controller may maintain the inter-surface distance at a constant distance smaller than the neutral distance during the removal preparation.

[0015] Furthermore, the controller may perform position-load control on the pickup head during the detachment preparation period so as to maintain a constant load on the pickup device.

[0016] In addition, the controller may store a target curve representing the time variation of the target position of the pickup head for maintaining the inter-surface distance constant during the separation preparation period, and control the position of the pickup head according to the target curve during the separation preparation period.

[0017] Furthermore, the controller may cause the pickup head to wait at a standby height during the removal preparation period, wherein the standby height is a height at which the pickup head can hold the target chip without contacting the target chip when the target chip completely floats up.

[0018] In the case, the pickup head may pull the object chip toward the adsorption surface when the distance between the adsorption surface of the pickup head and the bonding surface of the object chip, that is, the inter-surface distance, is less than the maximum effective distance and greater than the neutral distance; and may press the object chip in the direction away from the adsorption surface when the inter-surface distance is less than the neutral distance, and the standby height is the time before the object chip starts to float up, and the inter-surface distance is less than the maximum effective distance and greater than the neutral distance.

[0019] In addition, the pickup head may hold the adsorbed object in a non-contact manner while forming an air layer between the pickup head and the adsorbed object by ejecting air from the adsorption surface or imparting ultrasonic vibration to the adsorption surface, and the controller may start ejecting the air or imparting the ultrasonic vibration simultaneously with the start of the energy irradiation by the energy irradiation device or before the start of the irradiation.

[0020] Another semiconductor device manufacturing device disclosed in this specification is a manufacturing device for manufacturing semiconductor devices by joining a chip having a joining surface and a holding surface facing the joining surface to a joining object. The semiconductor device manufacturing device is characterized in that it includes: a chip holding device for holding one or more chips with the holding surface adhered to the surface of a dicing tape together with the dicing tape; a picking device for being arranged facing the joining surface of the chip and for non-contact holding and picking up a chip, i.e., an object chip, from among the one or more chips as a picking object; an energy irradiation device for selectively irradiating energy as light or heat from the back side of the dicing tape toward the object chip to reduce the adhesion of the dicing tape; and a controller for controlling the operation of the picking device and the energy irradiation device.

[0021] In the case described, the adhesive layer of the cutting tape may be an ultraviolet (UV) self-peeling adhesive layer whose adhesive force decreases and generates gas when irradiated with ultraviolet rays, the energy irradiation device irradiates ultraviolet rays as the energy, and the pickup device has an air-jet-type non-contact suction cup, which sprays air from the center of its adsorption surface, generates a vacuum suction force in the center, and forms an air layer between the adsorption object and the adsorption object, thereby holding the adsorption object in a non-contact manner.

[0022] In the above case, the controller may start the irradiation of the ultraviolet rays by the energy irradiation device after or simultaneously with the start of the ejection of the air by the pickup device.

[0023] Furthermore, the controller may control the energy irradiation device so that the energy irradiation region extends to a region outside the outer shape of the target chip.

[0024] Furthermore, the pickup device may further include a detection unit that detects a reaction force received from the target chip, and the controller may determine a timing for peeling the target chip from the dicing tape based on a change in a detection load detected by the detection unit.

[0025] In addition, the controller may be configured to perform: a pre-irradiation process, in which the energy irradiation device irradiates the energy in an amount that is sufficient to eliminate the remaining adhesion before the pickup device starts sucking the object chip; and a formal irradiation process, in which the energy irradiation device irradiates the energy in an amount that is sufficient to eliminate the remaining adhesion after the pre-irradiation process.

[0026] In addition, the adhesive layer of the cutting tape may have its adhesive force reduced by heat irradiation, the energy irradiation device may irradiate heat as the energy, the pickup device may have an air-jet-type non-contact suction cup, and the air-jet-type non-contact suction cup may jet air from the center of its adsorption surface toward the radial outside, thereby generating a vacuum suction force at the center and forming an air layer between the adsorption object and the adsorption object, thereby holding the adsorption object in a non-contact manner, and the controller may start the air ejection by the pickup device after causing the energy irradiation device to irradiate the energy in an amount that eliminates the adhesive force.

[0027] Effects of the Invention

[0028] In the semiconductor device manufacturing apparatus disclosed in this specification, the adhesive force of the dicing tape is partially eliminated. Therefore, even a non-contact pickup device with low suction force can pick up the target chip. Furthermore, this effectively prevents degradation of the target chip's bonding surface, further improving the quality of the chip's bonding to the target object. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a diagram showing the structure of a manufacturing apparatus.

[0030] Figure 2 This is a schematic diagram showing the structure of a PU header.

[0031] Figure 3 This is an image diagram showing the situation of the PU head picking up.

[0032] Figure 4 This is an image diagram showing the situation of the PU head picking up.

[0033] Figure 5 This is an image diagram showing the situation of the PU head picking up.

[0034] Figure 6 This is a flowchart showing the flow of the picking process.

[0035] Figure 7 This is a flowchart showing another flow of the picking process.

[0036] Figure 8 It is a diagram showing the structure of an ultrasonic non-contact suction cup.

[0037] Figure 9 This is a diagram showing an example of a restriction mechanism.

[0038] Figure 10 This is a map showing the behavior of the target chip accompanying energy irradiation.

[0039] Figure 11 (a), (b), and (c) are diagrams explaining the relationship between the force exerted by the air layer on the target chip and the inter-surface distance.

[0040] Figure 12 This is a map showing the situation of position control of the PU head during the detachment preparation period.

[0041] Figure 13 This is an example of a timing chart in the picking process.

[0042] Figure 14 This is a map diagram showing another example of the position control of the PU head during the detachment preparation period.

[0043] Figure 15 This is another example of a timing chart in the picking process.

[0044] [Explanation of Symbols]

[0045] 10: Manufacturing equipment

[0046] 12: Wafer holding device

[0047] 14: PU device

[0048] 16: Energy irradiation device

[0049] 18: Install the head

[0050] 20: Carrier

[0051] 22: Controller

[0052] 30: Expansion Ring

[0053] 32: Pressing ring

[0054] 40: PU head

[0055] 44: Inspection Department

[0056] 50: Processor

[0057] 52: Memory

[0058] 60: Non-contact suction cup

[0059] 62: Adsorption surface

[0060] 64: Vacuum

[0061] 66: Ultrasonic generator

[0062] 68: Extruded film

[0063] 70: Ultraviolet rays

[0064] 80: Restriction pin

[0065] 82: Spring

[0066] 100: Chip

[0067] 102: Joint surface

[0068] 110: Substrate

[0069] 130: Cutting tape

[0070] 132: Base material

[0071] 134: Adhesive layer

[0072] 136: Wafer Ring DETAILED DESCRIPTION

[0073] Hereinafter, the structure of the semiconductor device manufacturing apparatus 10 will be described with reference to the drawings. Figure 1 1 is a diagram showing the structure of a manufacturing device 10. The manufacturing device 10 picks up a chip 100 from a dicing tape 130 and bonds the chip 100 to a bonding object such as a substrate 110 or another chip 100 to manufacture a semiconductor device. The chip 100 is provided with a bonding material on one side thereof, and is bonded to the bonding object by pressing the one side against the bonding object. In addition, the surface of the chip 100 on which the bonding material is formed is referred to as the "bonding surface 102", and the surface on the opposite side is referred to as the "holding surface". In addition, in the following drawings, the bonding surface 102 is illustrated with a thick line.

[0074] When bonding chip 100 to the target object, it is possible to heat chip 100 to melt the bonding material. However, in this example, chip 100 is not heated and is bonded to the target object at room temperature. This room-temperature bonding utilizes atomic or molecular bonding. To perform room-temperature bonding, the bonding surface 102 of chip 100 in this example must maintain high quality.

[0075] To bond the chip 100 to the target object, the manufacturing apparatus 10 includes a mounting head 18 and a stage 20. The stage 20 is a platform on which the substrate 110 is placed. The mounting head 18 and the stage 20 are positioned facing each other, and the mounting head 18, at its distal end, suction-holds the holding surface of the chip 100. In other words, the mounting head 18 holds the chip 100 with its bonding surface 102 facing the stage 20. The mounting head 18 moves relative to the stage 20, pressing the chip 100 against the target object.

[0076] In order to supply the chip 100 to the mounting head 18, the manufacturing device 10 is further provided with a wafer holding device 12, a pickup device (hereinafter referred to as a "pick up (PU) device") 14, and an energy irradiation device 16. The wafer holding device 12 holds the wafer together with the dicing tape 130. The wafer is pre-attached to the dicing tape 130 and then cut to be divided into individual chips 100. Therefore, a plurality of chips 100 are arranged on the surface of the dicing tape 130. As described in detail later, the dicing tape 130 has a base material 132 and an adhesive layer 134, and each chip 100 is held by the adhesive force of the adhesive layer 134. A wafer ring 136 is installed on the dicing tape 130 in a manner that surrounds the wafer. The plurality of chips 100 are held on the dicing tape 130 in a posture (so-called face-up posture) with the holding surface in contact with the adhesive layer 134 and the bonding surface 102 facing upward.

[0077] The wafer holding device 12 holds the dicing tape 130 while applying outward tension in the planar direction. It includes an expander ring 30 and a pressure ring 32. The expander ring 30 is a generally cylindrical member with an axially extending through-hole. A flange extending radially outward is provided at its lower end. The inner diameter of the expander ring 30 is larger than the diameter of the wafer and smaller than the inner diameter of the wafer ring 136.

[0078] The dicing tape 130 is placed on the expansion ring 30. Furthermore, the wafer ring 136 attached to the dicing tape 130 is pressed against the flange of the expansion ring 30 by the pressure ring 32, securing the wafer ring. At this point, the dicing tape 130 covers the upper end of the through-hole in the expansion ring 30, allowing access from below through the through-hole.

[0079] The PU device 14 picks up the chip 100 from the dicing tape 130 in a face-up state, changes it to a face-down position, and directly or indirectly delivers it to the mounting head 18. Figure 1 As shown, the PU head 40 is arranged facing the bonding surface 102 of the chip 100 and has a PU head 40 for holding the bonding surface 102 of the chip 100 (hereinafter referred to as the "target chip 100") that is the object of pickup. After picking up the target chip 100, the PU head 40 rotates 180 degrees and changes the target chip 100 to a face-down posture. The PU device 14 hands the target chip 100 in the face-down posture to the mounting head 18. In addition, Figure 1 In the example, the target chip 100 is delivered directly from the PU device 14 to the mounting head 18, but it may also be delivered via other devices.

[0080] The energy irradiation device 16 is provided on the back side of the cutting tape 130, that is, on the opposite side of the PU device 14 with the cutting tape 130 clamped therebetween. The energy irradiation device 16 selectively irradiates energy toward the target chip 100 to locally reduce the adhesion of the cutting tape 130. The energy is selected based on the characteristics of the adhesive layer of the cutting tape 130. In this example, irradiation light, more specifically, ultraviolet ray irradiation is used as energy. In order to selectively irradiate energy regionally, the energy irradiation device 16 can either change the position and / or posture of the energy generating source (such as a UV lamp), or provide a shielding member for limiting the irradiation area between the energy generating source and the cutting tape 130. In any case, the energy irradiation device 16 changes the energy irradiation position according to the position of the target chip 100. The reason for providing such an energy irradiation device 16 will be described later.

[0081] The controller 22 controls the driving of the mounting head 18, the PU device 14, and the energy irradiation device 16. The controller 22 is a computer that physically includes a processor 50 and a memory 52.

[0082] As mentioned above, the PU head 40 picks up the target chip 100 by holding the bonding surface 102. However, if a portion of the PU head 40 mechanically contacts the bonding surface 102, mechanical or chemical changes may occur on the bonding surface 102, degrading the quality of the bonding surface 102. This can cause a decrease in the bonding quality between the chip 100 and the target chip. As mentioned above, in particular, during room-temperature bonding, the quality of the bonding surface 102 must be maintained at a high level, so it is necessary to prevent mechanical contact between the PU head 40 and the bonding surface 102.

[0083] Therefore, in this example, the PU head 40 is equipped with a non-contact suction cup 60 that non-contactly holds the bonding surface 102 of the target chip 100. Furthermore, an energy irradiation device 16 is provided that reduces the adhesion of the dicing tape 130 by irradiating energy onto the target chip 100. The non-contact suction cup 60 and the energy irradiation device 16 will be described in detail below.

[0084] Figure 2 This is a schematic diagram showing the structure of the PU head 40. As described above, the PU head 40 of this example has a non-contact suction cup 60 that holds the bonding surface 102 of the target chip 100 in a non-contact manner. The non-contact suction cup 60 is formed with multiple ejection holes (not shown) that eject compressed air CA from approximately the center of its bottom surface (i.e., the suction surface 62) toward the outside in the surface direction. The compressed air CA flows radially or cyclone-like from the ejection holes along the suction surface 62, thereby forming a vacuum 64 approximately in the center of the suction surface 62. When the vacuum 64 is formed, the suction surface 62 approaches the bonding surface 102 until the distance from the bonding surface 102 becomes less than the specified suction distance, thereby pulling the target chip 100 toward the suction surface 62. On the other hand, an air layer formed by the compressed air CA flowing toward the outside in the surface direction is formed between the bonding surface 102 and the suction surface 62. This air layer repels the bonding surface 102 from contacting the suction surface 62. That is, under the suction surface 62 , a suction force due to the formation of the vacuum 64 and a repulsive force due to the air layer are simultaneously generated, whereby the non-contact chuck 60 can hold the target chip 100 in a non-contact manner via the air layer.

[0085] By holding the target chip 100 with the non-contact suction cup 60 in this manner, damage to the bonding surface 102 can be reliably prevented. However, the suction force of the non-contact suction cup 60 is very weak. Therefore, it is difficult for the non-contact suction cup 60 to overcome the adhesive force of the dicing tape 130 and peel the target chip 100 from the dicing tape 130.

[0086] Therefore, in this example, the energy irradiation device 16 is provided in order to locally reduce the adhesive force of the dicing tape 130. Here, the dicing tape 130 processed in this example will be described. Figures 3 to 5 It is a map showing a state where the PU head 40 performs pickup.

[0087] like Figures 3 to 5As shown, the dicing tape 130 is formed by laminating a substrate 132 and an adhesive layer 134. The adhesive layer 134 is a UV self-peeling adhesive layer that loses its adhesiveness by irradiation with energy, more specifically, by irradiation with ultraviolet rays, and is automatically peeled off by the target chip 100. The UV self-peeling adhesive layer may, for example, contain a special acrylic polymer and a UV-functional gas generator. When the UV self-peeling adhesive layer is irradiated with ultraviolet rays, nitrogen gas is generated in the adhesive. The gas is released to the outside of the adhesive and to the interface between the adhesive surfaces. The gas accumulates at the bonding interface, and then the target object is naturally peeled off. The substrate 132 only needs to be transparent to ultraviolet rays, and for example, it may also contain a sheet containing a transparent resin such as polyacrylic acid, polyolefin, polycarbonate, vinyl chloride, acrylonitrile butadiene styrene (ABS), polyethylene terephthalate (PET), nylon, polyurethane, or polyimide. In addition, as another form, the base material 132 may include a sheet having a mesh structure, a sheet having holes, or the like.

[0088] When the energy irradiation device 16 irradiates the region of the dicing tape 130 corresponding to the target chip 100 with ultraviolet rays 70, as shown in FIG. Figure 4 As shown in FIG. 1 , the adhesive force of the region is reduced, and gas is generated from the adhesive layer 134 in the region, and the target chip 100 is automatically peeled off. Furthermore, by peeling the target chip 100 from the dicing tape 130, the target chip 100 can be picked up even with a small suction force of the non-contact suction cup 60. Finally, the non-contact suction cup 60 is as shown in FIG. Figure 5 As shown, the target chip 100 is held and lifted in a non-contact manner with an air layer interposed between the target chip 100 and the target chip 100 .

[0089] As is clear from the above description, according to this embodiment, by irradiating energy to the adhesive layer 134 and locally reducing the adhesive force, the target chip 100 can be picked up using the non-contact suction cup 60. Furthermore, this effectively prevents degradation of the bonding surface 102, thereby further improving the bonding quality between the target chip 100 and the bonding object.

[0090] Furthermore, the irradiation of the ultraviolet rays 70 by the energy irradiation device 16 begins simultaneously with or after the non-contact suction cup 60 begins ejecting compressed air CA at a position close to the target chip 100. This is to prevent the target chip 100 from bouncing due to gas generated from the UV self-peeling adhesive layer. That is, as described above, the adhesive layer 134 of the dicing tape 130 in this example is a UV self-peeling adhesive layer, but this UV self-peeling adhesive layer generates gas due to the irradiation of the ultraviolet rays 70. Due to the force of the gas ejection, the target chip 100 may sometimes bounce off the dicing tape 130. In this example, the non-contact suction cup 60 starts ejecting air before the irradiation of the ultraviolet rays 70, in other words, before the gas is generated, thereby suppressing the bouncing of the target chip 100 by the force of the compressed air CA. As a result, the target chip 100 can be picked up in an appropriate posture.

[0091] Furthermore, the irradiation area Ea of the ultraviolet light 70 (i.e., energy) is set to extend slightly outside the outer shape of the target chip 100 so as to completely cover the target chip 100. By making the irradiation area Ea larger than the target chip 100, the entire surface of the target chip 100 can be reliably irradiated even with slight errors in the positioning of the irradiation area Ea. Furthermore, by reliably reducing the adhesion across the entire surface of the target chip 100, the target chip 100 can be reliably suctioned even with a non-contact suction cup 60 having a low suction force. Furthermore, in conventional contact suction cups, the irradiation area Ea must be slightly smaller than the outer shape of the target chip 100 to prevent accidental suction of adjacent chips 100. However, as reiterated, the non-contact suction cup 60 used in this example has a low suction force, so even if the adhesion of a portion of another chip 100 is reduced, the other chip 100 will not be accidentally suctioned. Therefore, setting the irradiation area Ea larger than the target chip 100 is not a problem.

[0092] When the target chip 100 is peeled from the dicing tape 130 by irradiation with ultraviolet light 70, the PU device 14 raises the PU head 40. The timing for peeling the target chip 100, or even the timing for raising the PU head 40, can be determined based on the time elapsed from the start of irradiation with ultraviolet light 70 or the change in the load acting on the PU head 40. For example, the time required from the start of irradiation with ultraviolet light 70 to peeling can be obtained in advance through experiments as the peeling time. During the actual picking process, the target chip 100 can be determined to have been peeled when the peeling time has elapsed from the start of irradiation with ultraviolet light 70.

[0093] In addition, as another embodiment, the PU head 40 may be provided with a detection unit 44 for detecting the load acting on the PU head 40, and the timing of peeling may be determined based on the change in the detected load detected by the detection unit 44. That is, when the non-contact suction cup 60 is brought close to the target chip 100 while the compressed air CA is ejected, a vertical upward suction force Fa is generated on the target chip 100 (see FIG. Figure 3 、 Figure 4 ). When the object chip 100 is adhered and held by the adhesive layer 134, a vertical downward reaction force Fb that overcomes the suction force Fa acts on the PU head 40. The reaction force Fb drops sharply when the object chip 100 is peeled off from the adhesive layer 134. Therefore, the detection unit 44 can also be used to detect the reaction force Fb, or even the downward force acting on the PU head 40, and the timing of the sharp drop in the detected load can be judged as the timing of peeling. In addition, the detection unit 44 can also have a load sensor for detecting the load acting on the PU head 40. In addition, as another form, the detection unit 44 can also be a mechanism that detects the downward force acting on the PU head 40 by monitoring the output of the motor capable of torque feedback that drives the PU head 40.

[0094] Next, the flow of the process of picking up the target chip 100 will be described. Figure 6 This is a flowchart showing the process of the pickup process. When picking up a target chip 100, the controller 22 first positions the PU head 40 ( S10 ). Specifically, the PU head 40 is horizontally moved directly above the target chip 100 and then lowered until it approaches the target chip 100 to the point where suction force acts on the target chip 100, i.e., the suction distance.

[0095] When the PU head 40 approaches the target chip 100, the controller 22 supplies compressed air CA to the non-contact suction cup 60 of the PU head 40, causing the compressed air CA to be ejected from the suction surface 62 (S12). This creates a vacuum 64 under the non-contact suction cup 60, and a suction force acts on the target chip 100.

[0096] If the compressed air CA starts to be ejected, the controller 22 starts the irradiation of the ultraviolet rays 70 by the energy irradiation device 16 (S14). The energy irradiation device 16 irradiates the ultraviolet rays 70 only to the area corresponding to the target chip 100. The controller 22 starts the irradiation of the ultraviolet rays 70 and continues the irradiation of the ultraviolet rays 70 until the prescribed peeling time has passed. Moreover, if the peeling time has passed (yes in S16), the controller 22 determines that the target chip 100 has been peeled off from the dicing tape 130. In addition, as described above, the timing of peeling can also be grasped by the load acting on the PU head 40 instead of the elapsed time. In any case, if the target chip 100 can be peeled off, the controller 22 stops the irradiation of the ultraviolet rays 70 (S18) and then raises the PU head 40 (S20). Thus, the picking of one target chip 100 is completed. After picking up, the PU device 14 hands over the picked up target chip 100 to the mounting head 18 as needed. In addition, if a new chip 100 needs to be picked up, steps S10 to S20 are repeated again.

[0097] As is clear from the above description, according to this example, the PU device 14 can pick up the target chip 100 without contacting the bonding surface 102, thereby preventing degradation of the bonding surface 102 and further improving the bonding quality between the target chip 100 and the target object. Furthermore, the configuration described so far is merely an example; as long as it includes the PU device 14 for non-contact holding and picking up the target chip 100 and the energy irradiation device 16 for selectively irradiating energy toward the target chip 100 to locally reduce the adhesive force of the dicing tape 130, other configurations may be modified as appropriate.

[0098] For example, in the description so far, irradiation with ultraviolet rays 70 begins after the compressed air CA is ejected. However, a preliminary irradiation process may be performed before the compressed air CA is ejected, in other words, before the PU device 14 begins suctioning the target chip 100, to irradiate with an amount of energy sufficient to eliminate any remaining adhesive force. Furthermore, a main irradiation process may be performed after the preliminary irradiation process to irradiate with an amount of energy sufficient to eliminate any remaining adhesive force.

[0099] In this case, pre-irradiation can also be performed on all the multiple chips 100 on the dicing tape 130. In another embodiment, the PU device 14 can perform processing other than suctioning the chips 100. For example, while the chips 100 are being transported to the mounting head 18, pre-irradiation can be performed on a single chip 100 to be picked up next. By performing pre-irradiation in this way, the energy irradiation time during the main irradiation process can be shortened, thereby reducing the time required for picking up.

[0100] In addition, in the description so far, irradiation with light, more specifically, irradiation with ultraviolet rays, is used as the energy for eliminating the adhesive force, but other types of energy, such as heat, may also be used. That is, depending on the type of dicing tape 130, there are those that eliminate the adhesive force by heat rather than ultraviolet rays. For example, there are known dicing tapes 130 that use a thermosetting adhesive or a heat-foaming adhesive as the adhesive constituting the adhesive layer 134. The thermosetting adhesive is cross-linked by heating, thereby increasing the elastic modulus and even reducing the adhesiveness. The heat-foaming adhesive contains a foaming agent that foams by heating. In the case of using the dicing tape 130 to hold the chip 100, the energy irradiation device 16 may also irradiate heat as the energy.

[0101] Furthermore, when compressed air CA is ejected from the non-contact suction cup 60, a draft is generated around the target chip 100, which can easily lower the temperature of the target chip 100 and the surrounding dicing tape 130. Therefore, if compressed air CA is ejected concurrently with heat irradiation, the temperature of the peeling layer may not rise sufficiently, potentially leading to incomplete peeling of the target chip 100. Therefore, when heat irradiation is used as the energy source, the ejection of compressed air CA from the non-contact suction cup 60 can be performed after peeling of the target chip 100 is complete, in other words, after heat irradiation is complete.

[0102] Figure 7 FIG. 1 is a flowchart showing the flow of the pick-up process when irradiating heat. Figure 7 As shown, when using a heat-self-peelable dicing tape 130, after the PU head 40 is positioned (S30), heat irradiation is started (S32) before compressed air CA is ejected (S38). Then, after a predetermined peeling time has elapsed (YES in S34), if peeling of the target chip 100 is determined to be complete, compressed air CA is ejected (S38), thereby allowing the PU head 40 to hold the target chip 100 in a non-contact manner.

[0103] In the description so far, an air-jet type non-contact suction cup 60 is used that ejects compressed air CA to non-contactly hold the object being sucked. However, other types of non-contact suction cups 60 may be used. For example, an ultrasonic type non-contact suction cup 60 that utilizes high-frequency vibration to non-contactly hold the object being sucked may also be used. Figure 8This figure shows the structure of an ultrasonic non-contact suction cup 60. The non-contact suction cup 60 has an ultrasonic generator (sonotrode) 66 that micro-vibrates at a high frequency by applying a voltage. Due to these micro-vibrations, a thin film of compressed air, a so-called squeeze film 68, is formed on the lower surface of the non-contact suction cup 60. The squeeze film 68 repels the target chip 100 from contacting the suction surface 62. The non-contact suction cup 60 also performs air suction in parallel with the formation of this squeeze film 68. As a result, the target chip 100 is sucked to the suction surface 62, while on the other hand, the squeeze film 68 prevents contact with the suction surface 62, so that the non-contact suction cup 60 can hold the target chip 100 in a non-contact manner.

[0104] In both the air jet and ultrasonic methods, the non-contact chuck 60 constrains the object (target chip 100) in its axial direction, but does not constrain the object in the direction of the suction surface 62. Therefore, the target chip 100 sucked by the non-contact chuck 60 can easily move in the direction of the suction surface 62.

[0105] Therefore, in order to suppress such surface movement of the target chip 100 , a restriction mechanism for restricting the surface movement of the target chip 100 may be provided in the PU head 40 . Figure 9 This is a diagram showing an example of a restriction mechanism. Figure 9 In the embodiment, a limiting pin 80 capable of advancing and retreating in the axial direction is provided on the peripheral surface of the PU head 40. The limiting pin 80 is biased downward by a spring 82. When the non-contact suction cup 60 approaches the target chip 100 on the dicing tape 130, the limiting pin 80 contacts the bonding surface 102 of another chip 100 adjacent to the target chip 100. At this time, the limiting pin 80 retreats upward due to the reaction force received from the other chips 100, overcoming the force applied by the spring 82. On the other hand, if the PU head 40 lifts the target chip 100, the limiting pin 80 extends downward due to the force applied by the spring. At this time, the lower end of the limiting pin 80 is lower than the upper surface (bonding surface 102) of the target chip 100, and the limiting pin 80 is close to the peripheral surface of the target chip 100. Therefore, even if the target chip 100 attempts to move in the surface direction, the target chip 100 abuts against the limiting pin 80, and the movement of the target chip 100 in the surface direction is restricted.

[0106] In addition, it is clear from the description that the limiting pin 80 is in contact with the bonding surface 102 of the other object chip 100. The position of the limiting pin 80 is determined by the contact to prevent the quality of the bonding of the chip 100 to the bonding object from being reduced. That is, in the bonding surface 102, the bonding material (such as the electrode part) that is bonded to the bonding object is also required to maintain high quality, but even if the quality of the area without the bonding material changes slightly, it will not have an adverse effect on the bonding quality. Therefore, when setting the limiting pin 80, its position or size can be determined by making contact with a part that will not affect its bonding quality.

[0107] Next, other embodiments will be described. The structure of the manufacturing device 10 of this embodiment is the same as Figure 1 The manufacturing apparatus 10 of this embodiment is substantially the same as that shown in FIG. The control during the period from when the PU head 40 approaches the target chip 100 to when the target chip 100 is picked up to when the target chip 100 is removed (hereinafter referred to as “removal preparation period”) is special control.

[0108] In addition, the dicing tape 130 used in this embodiment floats the target chip 100 by irradiating energy (such as ultraviolet rays or heat). Figure 10 As described above, in addition, Figure 10 As shown, the dicing tape 130 includes a base material 132 and an adhesive layer 134 . Figure 10 State S1 represents an initial state before energy is irradiated on the dicing tape 130. In the initial state S1, the adhesive layer 134 adheres and holds the target chip 100.

[0109] The adhesive layer 134 generates gas or expands with the energy irradiation. Due to the generation and expansion of gas, the target chip 100 is naturally peeled off from the adhesive layer 134. Figure 10 As shown in the state S2, the target chip 100 floats upward. Therefore, if the height position of the PU head 40 is fixed at a height position too close to the target chip 100 in the initial state S1 (for example, Figure 10 If the target chip 100 is not lifted up by the energy irradiation and the PU head 40 is not lifted up by the energy irradiation, the target chip 100 may come into contact with the PU head 40. On the other hand, if the PU head 40 is fixed at a position far away from the target chip 100 in the initial state S1, the target chip 100 cannot be held by the non-contact chuck 60. Figure 10 As shown in state S3 , the target chip 100 may jump off the dicing tape 130 and scatter.

[0110] Therefore, in this embodiment, the PU head 40 is positionally controlled, taking into account the upward movement of the target chip 100 caused by energy irradiation. Before describing the positional control of the PU head 40, the relationship between the distance between the suction surface 62 and the bonding surface 102 (hereinafter referred to as "inter-surface distance Df") and the force exerted by the non-contact chuck 60 on the target chip 100 will be described.

[0111] As described above, when the non-contact suction cup 60 is of the air ejection type, a vacuum 64 is formed on the lower side of the suction surface 62 (see FIG. Figure 2 ) layer, in the case of ultrasonic type, an extrusion film 68 is formed on the lower side of the adsorption surface 62 (refer to Figure 8 The vacuum layer 64 and the squeeze film 68 are both air layers 72 with both attractive and repulsive forces. If the inter-surface distance Df is less than the specified maximum effective distance Dv, the force of the air layer 72 acts on the target chip 100.

[0112] To be more specific, Figure 11 As shown in (a), when the inter-surface distance Df is less than the maximum effective distance Dv and greater than the predetermined neutral distance Dn, the air layer 72 tends to shrink while attracting the target chip 100, so that Df approaches Dn. In other words, in this case, a force Fa acts on the target chip 100, pulling it toward the suction surface 62.

[0113] On the other hand, Figure 11 As shown in (c), when the inter-surface distance Df is less than the neutral distance Dn, the air layer 72 tends to expand to approach Df = Dn. At this time, with the target chip 100 supported by the dicing tape 130, the target chip 100 is pressed by the air layer 72, and a reaction force corresponding to the pressing force Fb acts on the PU head 40.

[0114] Next, the position control of the PU head 40 in this embodiment will be described. As described above, in this embodiment, the position control of the PU head 40 is performed in consideration of the floating behavior of the target chip 100 caused by energy irradiation.

[0115] Specifically, during the pickup process, the PU head 40 is brought close to the target chip 100 and irradiated with energy. Then, when the target chip 100 is separated from the dicing tape 130 , the PU head 40 is raised to remove the target chip 100 from the dicing tape 130 .

[0116] In this embodiment, during the removal preparation period, the PU head 40 is raised to prevent contact between the target chip 100 and the PU head 40, thereby offsetting the upward movement of the target chip 100. Furthermore, the inter-surface distance Df is maintained constant at a value smaller than the neutral distance Dn, so that the pressing force acts on the target chip 100. Figure 12 is a diagram showing the position control situation. Figure 12 As shown, in this embodiment, when the target chip 100 floats by a distance Δh between the initial state S1 and the state S2 , the PU head 40 also rises by a distance Δh to keep the inter-surface distance Df constant.

[0117] Here, in this embodiment, in order to keep the inter-surface distance Df constant, the load acting on the PU head 40 is detected, and the PU head 40 is load-position controlled so that the load is constant. By keeping the load constant, the thickness of the air layer 72 and even the inter-surface distance Df are kept constant. The load acting on the PU head 40 is inferred based on the current applied to the motor that moves the PU head 40 in the Z direction (hereinafter referred to as "driving current"). In addition, as another form, a dedicated load sensor can be installed on the PU head 40. In either case, during the detachment preparation period, if the load acting on the PU head 40 is greater than the target value, the controller 22 raises the PU head 40, and if the load is less than the target value, the controller 22 lowers the PU head 40.

[0118] Figure 13 This is an example of a timing diagram in the picking process. Figure 13 In the figure, the first segment represents the inter-surface distance Df. When the inter-surface distance Df is smaller than the neutral distance Dn, a pressing force acts on the target chip 100. When the inter-surface distance Df is larger than the neutral distance Dn, a tensile force acts on the target chip 100. Figure 13 The second segment in represents the Z direction position of the PU head 40, and the third segment represents the Z direction position of the target chip 100. Figure 13 The fourth section represents the driving current applied to the motor that drives the PU head 40. The driving current is proportional to the load acting on the PU head 40. Figure 13 In the embodiment, the PU head 40 includes an air-jet type non-contact suction cup 60 , and the energy irradiation device 16 irradiates ultraviolet rays 70 as energy.

[0119] When picking up the target chip 100, the controller 22 lowers the PU head 40 to a predetermined target height h1. The target height h1 in this case is a value where the inter-surface distance Df is greater than zero and less than the neutral distance Dn. The target height h1 is determined by performing experiments or simulations in advance. Figure 12 At time t1 , the PU head 40 reaches the target height h1 .

[0120] At time t2 after the PU head 40 reaches the target height h1, the controller 22 starts the air jet from the non-contact suction cup 60. As a result, an air layer 72 is formed on the lower side of the adsorption surface 62. Due to the force of the air layer 72, a predetermined pressing force is generated on the chip 100. In addition, a reaction force corresponding to the pressing force is generated in the PU head 40. As a result, the load acting on the PU head 40 and even the driving current increase sharply. The controller 22 performs load-position control on the PU head 40 so that the driving current maintains a predetermined target current A1. Here, the target current A1 is a value corresponding to the pressing force. The target current A1 is obtained in advance through experiments or simulations.

[0121] Then, at time t3, controller 22 drives energy irradiation device 16 to begin irradiating target chip 100 with ultraviolet light 70. This causes gas to be generated from adhesive layer 134, which is adhering and holding target chip 100, or causes adhesive layer 134 to expand. As a result, target chip 100 gradually floats upward after time t4.

[0122] When the target chip 100 floats, the inter-surface distance Df decreases, causing the pressing force and, consequently, the drive current to increase. If the drive current increases, the controller 22 raises the PU head 40 until the drive current reaches the target current A1. By continuing this process, the PU head 40 rises in response to the rise of the target chip 100, maintaining the inter-surface distance Df at a substantially constant level. Furthermore, even if the target chip 100 floats, contact between the target chip 100 and the PU head 40 can be reliably prevented.

[0123] At time t6, when the target chip 100 is completely peeled from the dicing tape 130, the controller 22 raises the PU head 40, thereby removing the target chip 100. The timing after the peeling of the target chip 100 is completed, in other words, the timing of the removal, can be determined based on the floating amount of the target chip 100 (or even the PU head 40), or based on the time that has passed since the start of energy irradiation.

[0124] As is clear from the above description, by controlling the drive of the PU head 40 to maintain a constant load, the inter-surface distance Df can be maintained constant even when the target chip 100 floats, thereby preventing contact between the PU head 40 and the target chip 100. Furthermore, in this embodiment, by maintaining the inter-surface distance Df below the neutral distance Dn, the target chip 100 can be pressed by the air layer 72 immediately before removal begins, effectively preventing the target chip 100 from being scattered due to gas ejection.

[0125] Next, another embodiment will be described. In this example, the PU head 40 is position-controlled to maintain a constant load in order to maintain the inter-surface distance Df. In this embodiment, a target curve representing the temporal changes in the target position of the PU head 40 for maintaining a constant inter-surface distance Df during the detachment preparation period is pre-stored. Furthermore, during the detachment preparation period, the PU head 40 is position-controlled according to this target curve.

[0126] That is, an experiment or simulation is performed in advance to obtain the temporal change of the Z-direction position of the target chip 100 after energy irradiation. Based on the temporal change of the Z-direction position of the target chip 100, the temporal change of the target position of the PU head 40 that can maintain the inter-surface distance Df constant is obtained as a target curve and stored in the memory 52. Figure 13 The time-position curve of the PU head 40 as shown in the second section is stored in the memory 52 in advance.

[0127] Once energy irradiation begins, the controller 22 controls the position of the PU head 40 based on the target curve stored in the memory 52. ​​Specifically, at each sampling point in the control, the actual position of the PU head 40 is compared with the target position, and the PU head 40 is raised or lowered to bring the actual position closer to the target position. This configuration maintains a constant inter-surface distance Df even when the target chip 100 floats, preventing contact between the PU head 40 and the target chip 100.

[0128] Next, other embodiments will be described. Figure 14 is an image diagram showing other embodiments. Figure 14 As shown, in this embodiment, the PU head 40 is kept in standby at a predetermined standby height hw during the detachment preparation period. The standby height hw is the height at which the PU head 40 can hold the target chip 100 without contacting it when the target chip 100 is completely floated.

[0129] Furthermore, in this embodiment, the standby height hw is set to a height at which the inter-surface distance Df is less than the maximum effective distance Dv before the target chip 100 begins to float. This configuration allows the force of the air layer 72 to act on the target chip 100 during the separation preparation period, effectively preventing the target chip 100 from scattering.

[0130] Furthermore, in this embodiment, the standby height hw is set to a height at which the inter-surface distance Df is greater than the neutral distance Dn before the target chip 100 begins to float. This configuration ensures a large inter-surface distance Df before the start of floating, thus more reliably preventing contact between the PU head 40 and the target chip 100 even when the target chip 100 floats. This standby height hw is determined in advance through experiments or simulations.

[0131] Figure 15 This is an example of a timing chart in the picking process in this embodiment. Figure 15 In the figure, the first segment represents the distance Df between the surfaces. Figure 15 The second segment in represents the Z-direction position of the non-contact chuck 60 , and the third segment represents the Z-direction position of the target chip 100 .

[0132] When picking up the target chip 100, the controller 22 lowers the PU head 40 to a predetermined standby height hw. Figure 15 At time t1, the PU head 40 reaches the standby height hw. As a result, the inter-surface distance Df is less than the maximum effective distance Dv and exceeds the neutral distance Dn.

[0133] Next, at time t2, the controller 22 starts air jetting from the non-contact suction cup 60. This creates an air layer 72 beneath the suction surface 62. At this point in time, since Dn < Df < Dv, a tensile force of a predetermined magnitude is generated on the target chip 100. However, at this point in time, since the target chip 100 is attached to the dicing tape 130, the Z-direction position of the target chip 100 does not change even under this tensile force.

[0134] Then, at time t3, controller 22 drives energy irradiation device 16 to begin irradiating target chip 100 with ultraviolet light 70. This causes gas to be generated from adhesive layer 134, which is adhering and holding target chip 100, or causes adhesive layer 134 to expand. As a result, target chip 100 gradually floats upward after time t4.

[0135] The inter-surface distance Df decreases rapidly as the target chip 100 rises. Then, at time t5, when the target chip 100 is completely peeled off, the inter-surface distance Df on the target chip 100 is less than the neutral distance Dn, and a pressing force acts on the target chip 100. If the target chip 100 can be completely peeled off, at time t6, the controller 22 raises the PU head 40 to remove the target chip 100.

[0136] As is clear from the above description, according to this embodiment, during the detachment preparation period, the PU head 40 waits at the standby height hw. Therefore, even if the target chip 100 floats, the PU head 40 is prevented from contacting the target chip 100. Furthermore, the standby height hw is set to a value such that the inter-surface distance Df is less than the maximum effective distance Dv before the target chip 100 begins to float. Therefore, during the detachment preparation period, the force of the air layer 72 can act on the target chip 100. Thus, the target chip 100 is constantly held by the non-contact suction cup 60, preventing the target chip 100 from scattering even if gas suddenly erupts from the adhesive layer 134.

[0137] The structure described so far is an example, and other structures may be changed as long as the position of the PU head 40 is controlled during the separation preparation period so that the target chip 100 and the PU head 40 do not come into contact even if the target chip 100 floats. Figure 13 、 Figure 15 In the embodiment, an air jet type non-contact suction cup 60 is used, and a dicing tape 130 that is self-peeling by irradiation with ultraviolet rays 70 is used. However, the non-contact suction cup 60 may be an ultrasonic type, and the dicing tape 130 may be a tape that is self-peeling by irradiation with heat.

Claims

1. A semiconductor device manufacturing apparatus that manufactures a semiconductor device by bonding a chip having a bonding surface and a holding surface facing the bonding surface to a bonding target, the semiconductor device manufacturing apparatus comprising: a wafer holding device for holding the one or more chips, the holding surfaces of which are adhesively held on the surface of the dicing tape, together with the dicing tape; A pickup device having a pickup head for holding a target chip, namely, a target chip, among the one or more chips in a non-contact manner, and picking up the target chip from the dicing tape; an energy irradiation device for selectively irradiating light or heat energy from the back side of the dicing tape toward the target chip to reduce the adhesive force of the dicing tape; as well as A controller controls the actions of the pickup device and the energy irradiation device, The adhesive layer of the dicing tape is a self-peeling adhesive layer whose adhesive strength decreases with the irradiation of the energy and causes the target chip to float a small distance. The controller controls the position of the pickup head during a period from when the pickup head approaches the target chip for pickup to when the target chip is removed from the dicing tape so that the target chip does not come into contact with the pickup head even if the target chip floats.

2. The semiconductor device manufacturing apparatus according to claim 1, wherein: During the removal preparation period, the controller raises the pickup head to offset the floating of the target chip, thereby maintaining a constant distance between the suction surface of the pickup head and the bonding surface of the target chip, that is, an inter-surface distance.

3. The semiconductor device manufacturing apparatus according to claim 2, wherein: The pickup head pulls the target chip toward the adsorption surface when the inter-surface distance is less than the maximum effective distance and greater than the neutral distance, and presses the target chip away from the adsorption surface when the inter-surface distance is less than the neutral distance. During the detachment preparation period, the controller maintains the inter-surface distance at a constant distance smaller than a neutral distance.

4. The semiconductor device manufacturing apparatus according to claim 2 or 3, wherein: During the detachment preparation period, the controller performs position-load control on the pickup head so as to keep the load acting on the pickup device constant.

5. The semiconductor device manufacturing apparatus according to claim 2 or 3, wherein: The controller stores a target curve indicating time variation of a target position of the pickup head for maintaining the inter-surface distance constant during the separation preparation period, and controls the position of the pickup head according to the target curve during the separation preparation period.

6. The semiconductor device manufacturing apparatus according to claim 1, wherein: During the removal preparation period, the controller makes the pickup head standby at a standby height. The standby height is a height at which the pickup head can hold the target chip without coming into contact with the target chip when the target chip completely floats up.

7. The semiconductor device manufacturing apparatus according to claim 6, wherein: The pickup head pulls the target chip toward the suction surface when the distance between the suction surface of the pickup head and the bonding surface of the target chip, i.e., the inter-surface distance, is less than the maximum effective distance and greater than the neutral distance. When the inter-surface distance is less than the neutral distance, the target chip is pressed in a direction away from the suction surface. The standby height is a height at which the inter-surface distance is smaller than the maximum effective distance and larger than the neutral distance at a time before the target chip starts to float.

8. The semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein: The pickup head forms an air layer between the pickup head and the adsorption object by ejecting air from the adsorption surface or imparting ultrasonic vibration to the adsorption surface, thereby holding the adsorption object in a non-contact manner. The controller starts the ejection of the air or the application of the ultrasonic vibration simultaneously with the start of the energy irradiation by the energy irradiation device or before the start of the irradiation.

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