Method for manufacturing thin film

Abstract

To perform the method for depositing an atomic layer in a specific region by improving selectivity of a method for depositing an atomic layer on a substrate, thereby manufacturing a thin film having a low inter-wiring leakage current value.SOLUTION: A method for manufacturing a thin film includes: an inactivation treatment step of inactivating part of a first principal surface of a substrate to form an inactivated region; and a formation step of forming a thin film on the first principal surface by using a method for depositing an atomic layer after the inactivation treatment step.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a method for producing a thin film. [Background technology]

[0002] As a method for forming films on various substrates, a method for producing a thin film by using atomic layer deposition (hereinafter, also referred to as "ALD") is known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-184449 A Summary of the Invention [Problem to be solved by the invention]

[0004] Conventionally, when ALD is performed on a substrate, a thin film may be formed by ALD in regions other than the region to be processed. For example, when a first main surface of a substrate has a metal region that is a region to be processed and an insulating region that is not a region to be processed, when ALD is performed on the first main surface, a thin film may be formed not only in the metal region but also in the insulating region. As the region where the thin film is formed increases, the leakage current value between wirings of the thin film increases.

[0005] As a result of intensive research, the inventors have found that a thin film having a low resistance value can be obtained by improving the selectivity of ALD. That is, an object of the present disclosure is to provide a method for producing a thin film having a low leakage current value between wirings by improving the selectivity of ALD on a substrate, thereby enabling ALD to be performed on a specific region. [Means for solving the problem]

[0006] The present disclosure includes the following aspects. [1] a passivation process for passivating a portion of the first major surface of the substrate to form a passivation region; a formation process of forming a thin film on the first main surface by atomic layer deposition after the passivation process; A method for producing a thin film, comprising: [2] the area other than the inactivated area is a metal-containing portion; The inactivation region is a substrate. A method for producing the thin film according to [1]. [3] The method for producing a thin film according to [2], wherein the metal-containing portion is a wiring. [4] The method for producing a thin film according to [2] or [3], wherein the metal-containing portion contains at least one selected from the group consisting of Cu and Pd. [5] In a substrate having a silicon-containing base material and a metal-containing portion containing at least one selected from the group consisting of Cu and Pd located on the base material, a passivation treatment is performed to passivate the base material to form a passivated region; a formation process of forming a thin film on the first main surface by atomic layer deposition after the passivation process; A method for producing a thin film, comprising: [6] The method for producing a thin film according to any one of [1] to [5], wherein a silane compound is used as a deactivation treatment agent in the deactivation treatment. [7] The method for producing a thin film according to [6], wherein the silane compound is at least one selected from the group consisting of 1,1,1,3,3,3-hexamethyldisilazane, 1,1,3,3-tetramethyldisilazane, N,N-dimethylaminotrimethylsilane, bis(N,N-dimethylamino)dimethylsilane, and methoxytrimethylsilane. [8] The forming process includes: A vaporization process for vaporizing a raw material liquid containing a raw material compound; a deposition process for depositing the vaporized precursor compound on the first principal surface; and a film formation process for forming the thin film on the region other than the inactivated region by reducing the region with a reducing gas after the deposition process; Including, A method for producing a thin film according to any one of [1] to [7]. [9] The raw material compound contains a metal atom, The method for producing a thin film according to [8], wherein the metal atoms are cobalt or palladium.

[10] The method for producing a thin film according to [8] or [9], wherein the raw material compound has a vapor pressure of 0.4 Torr or more at 100° C.

[11] The raw material compound includes a metal atom and a ligand including a coordination element that is coordinated to the metal atom, The coordination element is at least one selected from C, N, O and Si; A method for producing a thin film according to any one of [8] to

[10] .

[12] The method for producing a thin film according to

[11] , wherein the coordination element is at least one selected from C and O.

[13] The raw material compound includes a ligand, The ligand comprises at least one of a monodentate ligand and a polydentate ligand. A method for producing a thin film according to any one of [8] to

[12] .

[14] The polydentate ligand comprises at least one of a bidentate ligand and a tridentate ligand. A method for producing a thin film according to

[13] .

[15] The method for producing a thin film according to

[13] , wherein the monodentate ligand is at least one selected from the group consisting of carbonyl, alkyne, alkyl, amine, aminoalkyl, and hydride.

[16] the polydentate ligand is a bidentate ligand, The bidentate ligand is at least one selected from an alkyldiene, a cyclopentadiene, and an acetylacetonate. A method for producing a thin film according to

[13] or

[14] .

[17] The raw material compound is [ka] The method for producing a thin film according to any one of [8] to

[16] , wherein the method is at least one selected from the following:

[18] an etching process for performing atomic layer etching after the formation process; The method for producing a thin film according to any one of [1] to

[17] , comprising:

[19] The method for producing a thin film according to

[18] , further comprising carrying out the passivation treatment, the formation treatment, and the atomic layer etching in that order.

[20] A method for manufacturing a wiring board including wiring having an inter-wiring distance S, wherein in the obtained wiring board, when a thin film is formed on the wiring by the manufacturing method according to any one of [1] to

[18] , the leakage current value between the wiring is The leakage current between wirings is 60% or less compared to the leakage current between wirings when a thin film is formed on the wiring by a formation process of forming a thin film using an atomic layer deposition method without performing a passivation process. A method for manufacturing a wiring board. [twenty one] A method for manufacturing a wiring board including wiring having an inter-wiring distance S, wherein in the obtained wiring board, when a thin film is formed on the wiring by the manufacturing method described in

[18] or

[19] , the leakage current value between the wiring is The leakage current between wirings is 20% or less compared to the leakage current between wirings when a thin film is formed on the wiring by a formation process of forming a thin film using an atomic layer deposition method without performing a passivation process and an atomic layer etching process. A method for manufacturing a wiring board. [twenty two] A wiring board including a plurality of wirings having an inter-wiring distance S on the board, a passivation process for passivating a base material exposed on the first main surface of the substrate to form a passivation region; After the passivation treatment, a thin film is formed on the first main surface by an atomic layer deposition method. When the thin film is formed on the wiring, the leakage current value between the wirings is A process for forming a thin film on a wiring by atomic layer deposition without performing a passivation process is performed, and the thin film is formed on the wiring by the process. In this case, the leakage current value between the wirings is: 60% or less. [twenty three] A wiring board including a plurality of wirings having an inter-wiring distance S on the board, a passivation process for passivating a base material exposed on the first main surface of the substrate to form a passivation region; forming a thin film on the first main surface by atomic layer deposition after the passivation treatment; After the formation process, an etching process is performed to perform atomic layer etching, and when the thin film is formed on the wiring, the leakage current value between the wirings is A thin film is formed on a wiring by a formation process using an atomic layer deposition method without performing a passivation process and an atomic layer etching process, with respect to a leakage current value between the wirings when the thin film is formed on the wirings by the formation process, 20% or less. Effect of the Invention

[0007] According to the manufacturing method of the present disclosure, the selectivity of ALD on a substrate is improved, allowing ALD to be performed on specific regions, resulting in the production of thin films having low wiring leakage current values. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic diagram showing an example of a film forming apparatus according to the present disclosure. [Diagram 2] FIG. 2 is a schematic diagram showing the interdigital structure formed in the example. [Diagram 3] FIG. 3 is a graph showing the relationship between the L / S value and the ratio of the leakage current value obtained in Examples 1 and 2 and Comparative Example 1. [Figure 4] FIG. 4 is a graph showing the relationship between the L / S value and the ratio of the leakage current value obtained in Example 3 and Comparative Example 2. [Diagram 5]FIG. 5 is a graph showing the relationship between the L / S value and the ratio of the leakage current value obtained in Example 4 and Comparative Example 3. [Figure 6] FIG. 6 is a graph showing the relationship between the L / S value and the ratio of the leakage current value obtained in Example 5 and Comparative Example 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The present disclosure will be described below. Note that the following description does not limit the invention according to the present disclosure unless otherwise specified.

[0010] The method for producing a thin film according to the present disclosure includes: a passivation process for passivating a portion of the first major surface of the substrate to form a passivation region; a formation process of forming a thin film on the first main surface by atomic layer deposition after the passivation process; Includes.

[0011] The first major surface has a passivation region and an activation region that is a region other than the passivation region. In the present disclosure, a portion of the first major surface of the substrate is passivated to form the passivation region. In other words, the passivation region is the portion other than the activation region.

[0012] "A part of the first main surface of the substrate" refers to only a part of the first main surface of the substrate, not the entire surface, and is not particularly limited, and may be, for example, 10% or more, 30% or more, 90% or less, or 70% or less of the first main surface. Specifically, it may be 10% to 90%, or 30% to 70%.

[0013] The inactivated region is a region having more inactivated functional groups than the activated region. An example of the inactivated functional group is an OH group. By inactivating the OH group, it becomes an oxygen radical and bonds with the inactivation treatment agent or a group derived from the inactivation treatment agent.

[0014] The activated region is a region having fewer inactivated functional groups than the inactivated region. The activated region may be substantially free of inactivated functional groups. Here, "substantially free" means, for example, that the activated region has less than 3×10 inactivated functional groups per unit area. -5 mol / m 2 It may have the following or none at all.

[0015] In the manufacturing method of the present disclosure, by performing a passivation treatment, thin films are less likely to be formed by ALD in the passivation region. As a result, the selectivity of ALD is improved on the first main surface of the substrate. In addition, in the manufacturing method of the present disclosure, thin films are less likely to be formed in the passivation region, so that the cost performance of the manufacturing method of a thin film using ALD is good.

[0016] The inactivated region is preferably a substrate. The substrate preferably contains silicon. Silicon has OH groups on a first main surface, and the OH groups are inactivated by the inactivation treatment to form the inactivated region. That is, in the inactivation treatment, the substrate is subjected to the inactivation treatment.

[0017] The active region is preferably a metal-containing portion. The metal-containing portion is preferably a wiring, more preferably contains at least one selected from the group consisting of Cu and Pd, and further preferably contains Cu. That is, in the formation process, a thin film is formed on the wiring by using an atomic layer deposition method.

[0018] The method for producing the thin film preferably comprises the steps of: The method includes a passivation treatment for a substrate having a silicon-containing base material and a metal-containing portion located on the base material and containing at least one metal selected from the group consisting of Cu and Pd, in which the base material is passivated to form a passivated region.

[0019] As the deactivation treatment agent, a silane compound is preferably used. By using the silane compound, it is possible to deactivate OH groups present on the first main surface of the substrate.

[0020] The silane compound is preferably at least one selected from the group consisting of 1,1,1,3,3,3-hexamethyldisilazane (HMDS), 1,1,3,3-tetramethyldisilazane (TMDS), N,N-dimethylaminotrimethylsilane (DMA-TMS), bis(N,N-dimethylamino)dimethylsilane (DMA-DMS) and methoxytrimethylsilane, and is preferably 1,1,1,3,3,3-hexamethyldisilazane, 1,1,3,3-tetramethyldisilazane, N,N-dimethylaminotrimethylsilane, and more preferably 1,1,1,3,3,3-hexamethyldisilazane. By using the silane coupling agent, the OH group can be inactivated better.

[0021] The inactivation treatment can be carried out at, but not limited to, a temperature of, for example, 50° C. to 100° C. If the temperature is too low, the inactivation rate on the first main surface of the substrate slows down. If the temperature is too high, the inactivation treatment agent may decompose, resulting in the generation of impurities.

[0022] The formation process for forming a thin film using the ALD method is preferably: A vaporization process for vaporizing a raw material liquid containing a raw material compound; a deposition process for depositing the vaporized precursor compound on the first main surface of the substrate; and a film formation process for forming the thin film on the region other than the inactivated region by reducing the region with a reducing gas after the deposition process; Includes.

[0023] (Film forming equipment) The formation process for forming a thin film using the ALD is usually performed by a film formation apparatus as shown in FIG. 1. In the film formation chamber 1, a deposition process is performed in which a source compound vaporized in a source container 2 is deposited on a substrate prepared in advance, and the source compound is deposited on the substrate (for example, the first main surface of the substrate). Thereafter, in the film formation chamber 1, a film formation process is performed in which a thin film is formed in an area other than the inactivated area by reduction with a reducing gas, and a thin film is formed. Note that, although there is only one source container 2 in FIG. 1, there may be two or more, for example, when two or more types of source compounds are used. The film formation apparatus will be specifically described below.

[0024] In the source container 2, the source liquid 25 containing the source compound is heated and vaporized as necessary. The vaporized source compound is carried to the film formation chamber 1 by an inert carrier gas. The source container 2 may be heated to, for example, 30°C or higher, 45°C or higher, 200°C or lower, or 120°C or lower in order to vaporize the source liquid. The source compound may be heated to 45°C to 120°C, or 30°C to 200°C.

[0025] The inert carrier gas is, for example, nitrogen, argon, helium, etc. The flow rate of the inert carrier gas is adjusted by a mass flow controller (hereinafter also referred to as "MFC") 3. The pressure inside the source container 2 is adjusted by a needle valve 4. The flow rate of the inert carrier gas is, for example, 10 sccm to 100 sccm. The pressure inside the source container 2 is measured by a pressure gauge 26, and the pressure value is, for example, 10 Torr to 100 Torr.

[0026] The source material container 2 is connected to a supply line 5 that is connected to the film formation chamber 1 and a gas exhaust line 6. The supply line 5 and the gas exhaust line 6 have valves 7 and 8, respectively, and the supply and gas exhaust of the source material are switched by opening and closing the valves 7 and 8. The supply line 5 and the gas exhaust line 6 may have a heating mechanism. The heating mechanism may be a heater disposed around the piping, typically a jacket heater.

[0027] The supply line 5 and exhaust line 6 can be purged with an inert purge gas. The inert purge gas is, for example, nitrogen, argon, helium, or the like. The flow rate of the inert purge gas is adjusted by an MFC 9. The flow rate of the inert purge gas is, for example, 10 sccm to 100 sccm. The purge destination is switched to the supply line 5 or the exhaust line 6 by opening and closing valves 10 and 11. A sequence is set so that when the raw material compound flows through the supply line 5, the inert purge gas flows into the exhaust line 6, and when the raw material compound flows through the exhaust line 6, the inert purge gas flows into the supply line 5.

[0028] When the reducing gas is a high-pressure gas such as hydrogen, the flow rate is adjusted by the MFC 12. The flow rate is, for example, 10 sccm to 1000 sccm. When the reducing gas is a liquid at room temperature and normal pressure such as formic acid, the reducing gas is supplied using an inert carrier gas in the same manner as the raw material compound.

[0029] The supply line for the reducing gas branches into a supply line 13 connected to the film formation chamber 1, and an exhaust line 14. The supply line 13 and the exhaust line 14 have valves 15 and 16, respectively, and the supply and exhaust of the reducing gas are switched by opening and closing the valves 15 and 16. The supply line 13 and the exhaust line 14 may have a heating mechanism. The heating mechanism may be a heater disposed around the piping, typically a jacket heater.

[0030] The supply line 13 and exhaust line 14 can be purged with an inert purge gas. The inert purge gas is, for example, nitrogen, argon, helium, or the like. The flow rate of the inert purge gas is adjusted by the MFC 17. The flow rate of the inert purge gas is, for example, 10 sccm to 100 sccm. The purge destination is switched to the supply line 13 or the exhaust line 14 by opening and closing the valves 18 and 19. A sequence is set so that when the reducing gas flows through the supply line 13, the inert purge gas flows into the exhaust line 14, and when the reducing gas flows through the exhaust line 14, the inert purge gas flows into the supply line 13.

[0031] An inert balance gas line for adjusting the flow rate may be connected to the film formation chamber 1. The inert balance gas is, for example, nitrogen, argon, helium, etc. The flow rate of the inert balance gas is adjusted by the MFC 20. The flow rate of the inert balance gas is, for example, 10 sccm to 100 sccm.

[0032] The film formation chamber 1 includes a film formation table 21. Before the introduction of the raw material compound, the second main surface of the substrate on which the film is to be formed is usually brought into contact with the film formation table 21. The second main surface of the substrate is the surface opposite to the first main surface.

[0033] In the film formation chamber 1, a source compound vaporized in a source container 2 is introduced. That is, the vaporized source compound comes into contact with the first main surface of the substrate, and a deposition process is performed in which the vaporized source compound is deposited on the substrate.

[0034] In the film formation chamber 1, after the deposition process, a film formation process is carried out in which the deposit is reduced with a reducing gas to form a thin film.

[0035] The film formation chamber 1 may be equipped with a heating mechanism, and is heated to, for example, 100°C to 300°C.

[0036] The film formation chamber 1 has an exhaust line 22 for exhausting gas. The exhaust line 22 exhausts raw material compounds, carrier gas, reducing gas, etc. remaining in the film formation chamber 1. Examples of the exhaust method include a method of purging the system with an inert gas such as nitrogen or argon, a method of exhausting by reducing the pressure in the system, a combination of these, etc.

[0037] The exhaust line 22 includes a butterfly valve 23 for adjusting the pressure in the film formation chamber 1. The pressure in the film formation chamber 1 is adjusted by the opening degree of the butterfly valve 23. The pressure in the film formation chamber 1 is, for example, 10 Torr to 30 Torr.

[0038] The exhaust line 22 is connected to the exhaust line 6 and the exhaust line 14 downstream of the butterfly valve 23 (i.e., in the opposite direction to the film formation chamber 1). The exhaust line 22 has a pump 24 downstream of the connection point with the exhaust line 6 and the exhaust line 14.

[0039] As described above, the source liquid 25 containing the source compound is present in the source container 2, and the source compound vaporized in the source container 2 is transferred by the carrier gas through the supply line 5 to the film formation chamber 1. In the film formation chamber 1, the source compound vaporized in the source container 2 is deposited on a substrate prepared in advance. Thereafter, in the film formation chamber 1, a thin film is formed by reduction with a reducing gas. This process is repeated a specified number of times to obtain a thin film with a desired thickness.

[0040] (raw material liquid 25) The above-mentioned raw material liquid 25 is a liquid containing a raw material compound. The raw material liquid 25 may contain impurities.

[0041] The raw material liquid 25 preferably consists essentially of the raw material compounds. The term "consists essentially of the raw material compounds" means that the raw material liquid 25 may consist only of the raw material compounds, or may contain other compounds, such as impurities, at 2.0 mass % or less. The content of the impurities is a value measured using an organic trace elemental analyzer, an inductively coupled plasma mass spectrometry (ICP-MAS), or the like. Specifically, the ratio of the metal elements contained in the raw material compounds is obtained by elemental analysis, and the weight of the metal elements is calculated from this ratio. The weight of the main raw material components, such as the metal elements and ligands, contained in the raw material compounds is calculated from the calculated weight of the metal elements. Thereafter, the weight of the main raw material components is subtracted from the weight of the raw material liquid to obtain the weight of the residue. The weight of this residue is the weight of the impurities, and the ratio of the weight of the residue to the raw material liquid is the ratio of the impurities.

[0042] Examples of the impurities include carbon monoxide and organic compounds which are ligands of the raw material compounds.

[0043] The above raw material compounds may be used alone or in combination of two or more.

[0044] The raw material compound preferably contains a metal atom. Examples of the metal atom include a transition metal, specifically, cobalt or palladium. By using such a metal atom, it is possible to deposit a high-purity metal atom. In addition, by using such a metal atom, it is possible to reduce the resistance value of the thin film. When the metal atom is used to form a film on a wiring, it is possible to prevent the wiring from being broken.

[0045] The vapor pressure of the raw material compound at 100° C. is preferably 0.4 Torr or more, more preferably 1.0 Torr or more. The raw material compound has, for example, a ligand, which becomes an impurity when the ligand is decomposed. If the vapor pressure of the raw material compound is high, the amount of the impurity can be reduced.

[0046] The raw material compound is preferably a metal compound having a metal atom and a ligand coordinated to the metal atom.

[0047] The ligand preferably includes a coordination element that is coordinated to the metal atom. The coordination element is preferably at least one selected from C, N, O, and Si, and more preferably at least one selected from C and O.

[0048] The ligand preferably comprises at least one of a monodentate ligand and a polydentate ligand.

[0049] Examples of the monodentate ligand include halogen, hydride, alkyne, alkyl, alkenyl, cycloalkyl, aryl, alkynyl, alkylimino, amine, aminoalkyl, dialkylaminoalkyl, monoalkylamino, dialkylamino, alkoxy, alkoxyalkyl, hydrazide, hydride, phosphide, nitrile, silyl, carbonyl, etc. Preferably, the monodentate ligand is at least one selected from carbonyl, alkyne, alkyl, amine, aminoalkyl, and hydride, more preferably at least one selected from carbonyl and alkyne.

[0050] The polydentate ligand preferably includes at least one of a bidentate ligand and a tridentate ligand.

[0051] Examples of the bidentate ligand include diamine, di(silyl-alkyl)amino, di(alkyl-silyl)amino, disilylamino, dialkylaminoalkoxy, alkyldiene, alkoxyalkyldialkylamino, siloxy, diketonate, cyclopentadiene, cyclopentadienyl, pyrazolate, ketoiminate, diketiminate, acetylacetonate, etc. The bidentate ligand is preferably at least one selected from alkyldiene, cyclopentadiene, and acetylacetonate, and more preferably cyclopentadiene.

[0052] Examples of the tridentate or higher ligand include amidinate, guanidinate, phosphoguanidinate, phosphoamidinate, etc. A preferred example of the tridentate ligand is amidinate.

[0053] The ligand preferably comprises at least one of a monodentate ligand, a bidentate ligand, and a tridentate ligand. In one embodiment, the ligand is a monodentate ligand. In one embodiment, the ligand is a bidentate ligand. In one embodiment, the ligand is a tridentate ligand.

[0054] The metal compound is preferably at least one selected from the following compounds. These metal compounds have high vapor pressure, so ALD can be performed at low temperatures. By performing ALD at low temperatures, decomposition of the raw material compounds can be suppressed, and the content of impurities derived from the raw material compounds can be reduced. [ka]

[0055] In an embodiment having a high vapor pressure, the metal compound is preferably at least one selected from the following compounds: [ka]

[0056] The metal compound is preferably at least one selected from the following compounds, which have a high vapor pressure and are highly reactive with a reducing gas: [ka]

[0057] The metal compound is preferably the following compound: [ka]

[0058] (Carrier gas) The carrier gas may be an inert gas such as nitrogen or a rare gas, and preferably nitrogen or argon gas is used.

[0059] (reducing gas) The reducing gas is not particularly limited as long as it can react with the raw material compound, but is preferably at least one selected from the group consisting of H2, NH3, hydrazine, monohydrazine, dimethylhydrazine, formic acid, formalin, organic ammonia, silane-based compounds, diborane-based compounds, and alcohol-based compounds. The reducing gas is preferably at least one selected from the group consisting of H2 and dimethylhydrazine. By using such a reducing gas, it is possible to suppress the decomposition of the reducing gas and suppress the generation of impurities, and to prevent the impurities from being mixed into the thin film to be formed. As a result, the resistivity of the thin film can be reduced.

[0060] The reducing gas may be one kind of gas or a combination of multiple gases. When the reducing gas is a combination of multiple gases, the pressure of the reducing gas means the total pressure of all the gases.

[0061] (base material) The reducing gas reacts with the source compound deposited on the substrate to reduce the source compound, thereby forming a metal film (thin film) on the substrate.

[0062] The material constituting the substrate is not particularly limited, but examples thereof include metals such as copper, silver, gold, platinum, nickel, palladium, and aluminum; silicon; ceramics such as indium arsenide, indium gallium arsenide, silicon oxide, silicon nitride, silicon carbide, titanium nitride, tantalum oxide, tantalum nitride, titanium oxide, titanium nitride, ruthenium oxide, zirconium oxide, hafnium oxide, lanthanum oxide, and gallium nitride; and glass.

[0063] In one embodiment, the material constituting the substrate is copper, silver, gold, platinum, nickel, palladium, or aluminum, and is preferably copper.

[0064] The shape of the substrate is not particularly limited, and may be plate-like, rod-like, spherical, layer-like, fibrous, scale-like, or the like.

[0065] In one embodiment, the base material may be in the form of a layer provided on a substrate, for example, wiring on a wiring board.

[0066] The temperature of the substrate when the raw material compound is deposited on the substrate can be, for example, 20 to 600°C, preferably 50 to 500°C, more preferably 100 to 450°C, and further preferably 100 to 400°C.

[0067] The temperature of the substrate when the reducing gas is introduced into the film formation chamber 1 may be, for example, 20 to 600° C., preferably 50 to 500° C., more preferably 100 to 450° C., and even more preferably 100 to 400° C. By conducting the process within the above temperature range, decomposition of the reducing gas can be suppressed, generation of impurities can be suppressed, and incorporation of impurities into the thin film to be formed can be prevented. As a result, the resistivity of the thin film can be reduced.

[0068] The temperature of the film formation chamber 1 is not particularly limited, but may be, for example, 20 to 600°C, preferably 50 to 500°C, more preferably 50 to 450°C, and further preferably 50 to 400°C, for example, 50 to 300°C.

[0069] Depending on the desired film thickness, the deposition process and the film-forming process may be repeated, or the deposition process may be repeated, or the film-forming process may be repeated.

[0070] Preferably, the method for manufacturing a wiring board including wiring having a wiring distance S includes the steps of: In the obtained wiring board, when a thin film is formed on the wiring by the manufacturing method of the present disclosure, the leakage current value between the wirings is: The leakage current value between wirings when a thin film is formed on the wirings by a formation process of forming a thin film using an atomic layer deposition method without performing a passivation process is 60% or less, more preferably 50% or less, and further preferably 20% or less. The lower limit of the ratio of the leakage current value is not particularly limited, but is, for example, 10%.

[0071] Specifically, it can be determined as follows.

[0072] First, a first wiring board having a thin film formed on wiring by the inactivation process and the formation process of the present disclosure is prepared. For example, as shown in FIG. 2, the first wiring board has wiring of comb-tooth structures 33, 34 as an activation region 32. The comb-tooth structure 33 has a support portion 330, a base portion 331 extending from the support portion 330 in the right direction (X direction), and a plurality of teeth portions 332 extending downward (reverse Y direction) from the base portion 331. The comb-tooth structure 34 has a support portion 340, a connecting portion 341 extending from the support portion 340 in the reverse Y direction, a base portion 342 extending from the connecting portion 341 in the X direction, and a plurality of teeth portions 343 extending upward (Y direction) from the base portion 342. The teeth portions 332, 343 have a wiring width L. The teeth portions 332 and the teeth portions 343 are alternately present. Between one tooth 332 and the adjacent tooth 343, there is located an inactivated region 31 with an inter-wire distance S. Between one tooth 343 and the adjacent tooth 332, there is located an inactivated region 31 with an inter-wire distance S. At this time, the inter-wire distance S is adjusted to an appropriate value.

[0073] A voltage is applied between the support parts 330 and 340 of the first wiring board. At this time, a certain amount of current flows between the wires that are not normally conductive. That is, a leakage current occurs between the wires. The value of the current at this time is defined as leakage current value 1. Note that leakage means that the value of the applied current does not increase or becomes difficult to increase.

[0074] Next, a first comparative wiring board is prepared by forming a thin film on the wiring by performing only a forming process without performing a passivation process. That is, a thin film is formed on the wiring by using an atomic layer deposition method to prepare a first comparative wiring board. The first comparative wiring board has the same form as the first wiring board. Specifically, in the first wiring board, a thin film is formed on the wiring by a forming process for forming a thin film by using an atomic layer deposition method. In the first wiring board, the wiring has a wiring width L, and the distance between the wirings is the wiring distance S.

[0075] A voltage is applied between the support parts of the first comparative wiring board in the same manner as between the support parts of the first wiring board. Specifically, a voltage is applied between support parts 330 and 340 of the first comparative wiring board. At this time, a certain amount of current flows between the wires that are not normally conductive. In other words, a leakage current occurs between the wires. The value of the current at this time is taken as leakage current value 2.

[0076] The ratio of the leakage current value 1 to the leakage current value 2 is calculated and set as the leakage current value ratio.

[0077] The wiring width L is, for example, not less than 0.25 μm and not more than 10 μm. The wiring distance S is, for example, not less than 0.25 μm and not more than 10 μm.

[0078] In the above measurement, the wiring width L and the wiring distance S are the same value. For example, when the wiring width L is 0.25 μm, the wiring distance S is 0.25 μm. Similarly, when the wiring width L is 0.5 μm, the wiring distance S is 0.5 μm; when the wiring width L is 1.0 μm, the wiring distance S is 1.0 μm; when the wiring width L is 5.0 μm, the wiring distance S is 5.0 μm; and when the wiring width L is 10.0 μm, the wiring distance S is 10.0 μm. The above widths may vary slightly.

[0079] Preferably, the method of the present disclosure includes an etching process of atomic layer etching (ALE) after the formation process using ALD.

[0080] The ALE can be performed by alternately exposing a substrate to a compound containing Cl or F and a precursor. Examples of compounds containing Cl or F include sulfuryl chloride (SO2Cl2), Cl2, HF, and HF-pyridine. Examples of precursors include metal precursors and organic precursors, such as trimethylaluminum, tin(II) acetylacetonate (Sn(acac)2), trimethylaluminum (TMA), dimethylaluminum chloride (DMAC), and hexafluoroacetylacetone.

[0081] In the above-mentioned ALE, the metal film is etched (removed) by alternately exposing the substrate to vapors of, for example, sulfuryl chloride (SO2Cl2) and hexafluoroacetylacetone (hfac) at a substrate temperature of, for example, 100 to 200°C.

[0082] The ALE may be performed using, for example, HF and trimethylaluminum (Al(CH3)3) which is a metal precursor. In this case, the ALE may be performed at, for example, 250°C to 325°C. The ALE may be performed based on, for example, Younghee Lee, Craig Huffman, Steven M. George, Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3Using Sequential, Self-Limiting Thermal Reactions, Chemistry of Materials. 2016, 28, 2994-3003.

[0083] The ALE may use, for example, HF-pyridine as a fluorination reagent, and at least one selected from tin(II) acetylacetonate (Sc(acac)2), trimethylaluminum (TMA), and dimethylaluminum chloride (DMAC) as a metal precursor. For example, when tin(II) acetylacetonate is used, the ALE may be performed at 150°C. When dimethylaluminum chloride is used, the ALE may be performed at 225°C. When trimethylaluminum is used, the ALE may be performed at 250°C. The ALE may be performed based on, for example, Younghee Lee, Craig Huffman, Steven M. George, Selectivity in Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions, Chemistry of Materials. 2016,28,7657-7665.

[0084] The ALE may be performed using Cl2 gas and a diketone organic precursor hexafluoroacetylacetone (hfac). In this case, the ALE may be performed at 140°C. The ALE may be used, for example, to process surfaces containing Co. The ALE may be performed, for example, based on Zijian Wang, Robert L. Opila, In operando x-ray photoelectron spectroscopy study of mechanism of atomic layer etching of cobalt, Journal of Vacuum Science & Technology A, 38, Mar / Apr 2020, 022611.

[0085] Preferably, in the present disclosure, there is provided a method for manufacturing a wiring board including wiring having a wiring distance S, comprising the steps of: In the obtained wiring board, when a thin film is formed on the wiring by the manufacturing method of the present disclosure, the leakage current value between the wirings is 20% or less of the leakage current value between the wirings when a thin film is formed on the wiring by a formation process of forming a thin film using an atomic layer deposition method without performing a passivation process and an atomic layer etching process. The lower limit of the leakage current value of the thin film is not particularly limited, but is, for example, 3%.

[0086] Specifically, it can be determined as follows.

[0087] First, a second wiring substrate is prepared by forming a thin film on wiring by the passivation process, formation process, and atomic layer etching process of the present disclosure. For example, as shown in FIG. 2, the second wiring substrate has wiring with comb-tooth structures 33 and 34 as an activation region 32. The symbols are as described above. The distance S between the wirings is adjusted to an appropriate value.

[0088] A voltage is applied between the support parts of the second wiring board. Specifically, a voltage is applied between support parts 330 and 340 of the second wiring board. At this time, a certain amount of current flows between the wires that are not normally conductive. That is, a leakage current occurs between the wires. The value of the current at this time is taken as leakage current value 3.

[0089] Next, a second comparative wiring board is prepared by forming a thin film on the wiring by performing only the formation process without performing the passivation process and the atomic layer etching process. That is, a thin film is formed on the wiring by using the atomic layer deposition method to prepare a second comparative wiring board. The second comparative wiring board has the same form as the second wiring board.

[0090] A voltage is applied between the support parts of the second comparative wiring board in the same manner as between the support parts of the second wiring board. Specifically, a voltage is applied between support parts 330 and 340 of the second comparative wiring board. At this time, a certain amount of current flows between the wires that are not normally conductive. In other words, a leakage current occurs between the wires. The value of the current at this time is taken as leakage current value 4.

[0091] The ratio of the leakage current value 3 to the leakage current value 4 is calculated and set as the leakage current value ratio.

[0092] Preferably, the passivation process, the thin film formation process using ALD, and the etching process using ALE are further performed in this order. By performing these processes again, a thin film of an appropriate thickness can be formed. The number of times that the passivation process, the thin film formation process using ALD, and the etching process using ALE are repeated is not particularly limited, but they can be performed until a predetermined thickness is obtained. The number of times that the process can be repeated is, for example, 4 to 10 times.

[0093] <Thin film> In the present disclosure, the thin film is produced by the above-mentioned production method. The thin film contains, for example, at least one of cobalt and palladium.

[0094] Preferably, the thin film has a thickness of 1 to 10 nm.

[0095] The content of impurities contained in the thin film is preferably 2% by mass or less. It means below the detection limit. The detection limit means below the detection limit when measured using an organic elemental analyzer, and is 1.0 ppm or less. The content of impurities in the thin film is a value measured using an X-ray photoelectron spectrometer, an organic trace elemental analyzer, an inductively coupled plasma mass spectrometry (ICP-MS), etc., and specifically, a value measured using an X-ray photoelectron spectrometer. Specifically, the ratio of metal elements contained in the thin film is obtained using an X-ray photoelectron spectrometer, and the weight of the metal elements is calculated from this ratio. The weight of the main raw material components, such as metal elements and ligands, contained in the thin film is calculated from the calculated weight of the metal elements. Then, the weight of the main raw material components is subtracted from the weight of the thin film to obtain the weight of the residue. The weight of this residue is the weight of the impurities, and the ratio to the thin film is the ratio of the impurities.

[0096] <Laminate> The laminate according to one embodiment of the present disclosure is a wiring substrate including a thin film formed by the above-described manufacturing method. The thin film includes, for example, at least one of cobalt and palladium.

[0097] Preferably, the wiring substrate includes a plurality of wirings having an inter-wiring distance S on the substrate, A passivation process is performed to passivate a base material exposed on a first main surface of the substrate to form a passivated region, and a formation process is performed to form a thin film on the first main surface using an atomic layer deposition method after the passivation process. When the thin film is formed on the wiring, the leakage current value 1 between the wirings is: With respect to the leakage current value 2 between the wirings when the thin film is formed on the wiring by a formation process of forming a thin film using an atomic layer deposition method without performing a passivation process, At this time, the thin film is preferably formed on the wiring. That is, the leakage current value 1 is a value obtained when a thin film formed by the manufacturing method of the present disclosure is provided on a wiring substrate having wiring, and the leakage current value 2 is a value obtained when a thin film formed by atomic layer deposition is provided on a wiring substrate having wiring.

[0098] Preferably, the wiring substrate includes a plurality of wirings having an inter-wiring distance S on the substrate, a passivation process for passivating a base material exposed on the first main surface of the substrate to form a passivation region; forming a thin film on the first main surface by atomic layer deposition after the passivation treatment; After the formation process, an etching process is performed to perform atomic layer etching, and when the thin film is formed on the wiring, the leakage current value 3 between the wirings is With respect to the leakage current value 4 between the wirings when the thin film is formed on the wirings by a formation process in which a thin film is formed on the wirings by an atomic layer deposition method without performing a passivation process and an atomic layer etching process, Less than 20%. That is, the leakage current value 3 is a value obtained when a thin film formed by the manufacturing method of the present disclosure is provided on a wiring substrate having wiring, and the leakage current value 4 is a value obtained when a thin film formed by atomic layer deposition is provided on a wiring substrate having wiring.

[0099] Although one embodiment of the present disclosure has been described above, the present disclosure is not limited to such an embodiment and various modifications are possible. EXAMPLES

[0100] The present disclosure will be described below with reference to examples, but the present disclosure is not limited to the following examples.

[0101] [Film formation process] The film formation process was carried out using the following method. <Step 1> Inactivation treatment Item 1. The deposition chamber was opened to the atmosphere, and after the substrate was placed on the deposition stage, the chamber was evacuated. Item 2. The temperature of the deposition chamber was set to 70°C, the N2 flow rate to 5 sccm, and the total pressure to 1 Torr. Item 3. Vapor of a compound used for passivation was supplied to a film formation chamber, and a part of the substrate was exposed to the vapor to provide a passivation region. <Step 2> ALD processing (forming processing) Item 4. The chamber temperature was set to 100°C, the bubbler temperature to 45°C. The N2 flow rate was set to 10sccm, the N2 flow rate for the CCTBA carrier to 10sccm, and the H2 flow rate to 100sccm. The total pressure was set to 5Torr, and the bubbler pressure to 10Torr. Item 5. One cycle consisted of CCTBA supply (5 seconds), purge (3 seconds), H2 supply (10 seconds), and purge (3 seconds). This cycle was repeated. CCTBA is the following compound. [ka] <Step 3> ALE processing Item 6. The chamber temperature was set to 180°C, the N2 flow rate to 10 sccm, and the total pressure to 0.1 Torr. Item 7. One cycle consisted of SO2Cl2 supply (0.03 Torr, 10 seconds), purge (7 seconds), hfac supply (0.05 Torr, 30 seconds), and purge (7 seconds). This cycle was repeated.

[0102] Example 1 Among the above-mentioned film formation processes, steps 1 and 2 were performed. Specifically, in step 1, a passivation region 31 of FIG. 2 was provided on the substrate. In step 2, the ALD process was performed on the activation region 32 of FIG. 2, and the comb-tooth structure of FIG. 2 was created on the substrate to form a wiring substrate. In item 5 of step 2, a total of 100 cycles were performed. HMDS was used as the compound used for passivation.

[0103] Example 2 Among the above-mentioned film formation processes, steps 1 to 3 were performed. Specifically, in step 1, a passivation region 31 of FIG. 2 was provided on the substrate. In step 2, the ALD process was performed on the activation region 32 of FIG. 2 to create the comb-tooth structure of FIG. 2 on the substrate, and then, the ALE process was performed to form a wiring substrate. In step 2, item 5 was performed a total of 25 cycles, and in step 3, item 7 was performed a total of 3 cycles. These steps 2 and 3 were repeated a total of four times. In addition, HMDS was used as the compound used for passivation.

[0104] Comparative Example 1 Of the above-mentioned film formation processes, only step 2 was performed. Specifically, 100 cycles of the ALD process of step 2 were performed. That is, in Comparative Example 1, steps 1 and 3 were not performed.

[0105] [Leak current measurement] The leakage current value of the formed wiring board was measured as follows. A voltage was applied to the support parts of the wiring boards obtained in Examples 1 and 2, and Comparative Example 1 using the following device and conditions, and the value of the current when a leakage current occurred between the wirings was determined. The value of Comparative Example 1 was used as the standard, and the ratios of Example 1 and Example 2 were calculated. Furthermore, the value of the wiring width L and the value of the distance S between the wirings were measured in the formed wiring board. Equipment: HiSOL small manual prober and KEITHLEY source meter Conditions: A voltage of 100 mV was applied between the measurement pads and the current value was measured as follows. A voltage was applied between the support parts 330 and 340 of the wiring board. At this time, a certain amount of current flowed between the wirings that were not originally conductive. The value of the current at this time was taken as the leakage current value.

[0106] Fig. 3 shows the ratio of the leakage current value. In Fig. 3, from the left, the ratio when L / S is 10 μm / 10 μm, the ratio when 5 μm / 5 μm, the ratio when 1 μm / 1 μm, the ratio when 0.5 μm / 0.5 μm, and the ratio when 0.25 μm / 0.25 μm are shown. In Fig. 3, for simplification, 10 μm, 5 μm, 1 μm, 0.5 μm, and 0.25 μm are respectively described. In Fig. 3, from the left, the ratio of the leakage current value of Comparative Example 1, the ratio of the leakage current value of Example 1 when the leakage current value of Comparative Example 1 is set to 1, and the ratio of the leakage current value of Example 2 when the leakage current value of Comparative Example 1 is set to 1 are shown.

[0107] It was found that the ratio of the leakage current value was lower in Example 1 (passivation treatment and ALD treatment) than in Comparative Example 1 (ALD treatment only). When Example 2 (passivation treatment, ALD treatment, and ALE treatment) was performed, the ratio of the leakage current value was further reduced.

[0108] Example 3 Among the above-mentioned film formation processes, steps 1 and 2 were performed. Specifically, in step 1, a passivation region 31 of FIG. 2 was provided on the substrate. In step 2, the ALD process was performed on the activation region 32 of FIG. 2, and the comb-tooth structure of FIG. 2 was created on the substrate to form a wiring substrate. In item 5 of step 2, a total of 100 cycles were performed. DMA-TMS was used as the compound used for passivation.

[0109] Comparative Example 2 Of the above-mentioned film formation processes, only step 2 was performed. Specifically, 100 cycles of the ALD process of step 2 were performed. That is, in Comparative Example 2, steps 1 and 3 were not performed.

[0110] The leakage current value was measured based on the above-mentioned method using the wiring boards obtained in Example 3 and Comparative Example 2. The pattern size (distance between wiring lines) was set to 1 μm. The ratio of the leakage current values ​​is shown in Fig. 4. It was found that the ratio of the leakage current values ​​was lower in Example 3 (passivation treatment, ALD treatment) than in Comparative Example 2 (ALD treatment only).

[0111] Example 4 Of the above-mentioned film formation processes, steps 1 and 2 were performed. Specifically, in step 1, a passivation region 31 of FIG. 2 was provided on the substrate. The ALD process in step 2 was performed on the activation region 32 of FIG. 2, the comb-tooth structure of FIG. 2 was created on the substrate, and a wiring substrate was formed. In item 5 of step 2, a total of 100 cycles were performed. HMDS was used as the compound used for passivation. Also, in step 2, the following compound (CpCo(CO)2) was used instead of CCTBA. [ka]

[0112] Comparative Example 3 Of the above-mentioned film formation processes, only step 2 was performed. In step 2 (ALD process), the same compound (CpCo(CO)2) as in Example 4 was used. Specifically, the ALD process in step 2 was performed 100 cycles. That is, in Comparative Example 3, steps 1 and 3 were not performed.

[0113] The leakage current value was measured based on the above-mentioned method using the wiring boards obtained in Example 4 and Comparative Example 3. The pattern size (distance between wiring lines) was 1 μm. The ratio of the leakage current values ​​is shown in Fig. 5. It was found that the ratio of the leakage current values ​​was lower in Example 4 (inactivation treatment, ALD treatment) than in Comparative Example 3 (ALD treatment only).

[0114] Example 5 Of the above-mentioned film formation processes, steps 1 and 2 were performed. Specifically, in step 1, a passivation region 31 of FIG. 2 was provided on the substrate. The ALD process in step 2 was performed on the activation region 32 of FIG. 2, the comb-tooth structure of FIG. 2 was created on the substrate, and a wiring substrate was formed. In item 5 of step 2, a total of 100 cycles were performed. DMA-TMS was used as the compound used for passivation. In step 2, the compound (CpCo(CO)2) was used instead of CCTBA.

[0115] Comparative Example 4 Of the above-mentioned film formation processes, only step 2 was performed. In step 2 (ALD process), the same compound (CpCo(CO)2) as in Example 5 was used. Specifically, the ALD process in step 2 was performed 100 cycles. That is, in Comparative Example 4, steps 1 and 3 were not performed.

[0116] The leakage current value was measured based on the above-mentioned method using the wiring boards obtained in Example 5 and Comparative Example 4. The pattern size (distance between wiring lines) was 1 μm. The ratio of the leakage current values ​​is shown in Fig. 6. It was found that the ratio of the leakage current values ​​was lower in Example 5 (passivation treatment, ALD treatment) than in Comparative Example 4 (ALD treatment only). [Industrial Applicability]

[0117] According to the manufacturing method of the present disclosure, the selectivity of ALD on the substrate is improved, so that ALD can be performed on a specific region, and as a result, a thin film having a low leakage current between wirings can be manufactured. The manufacturing method of the present disclosure can be used for various applications, such as the manufacture of circuit boards. [Explanation of symbols]

[0118] 1... Film forming chamber 2...Raw material container 3,9,12,17,20…Mass flow controller 4...Needle valve 5,13…Supply line 6,14…Exhaust line 7,8,10,11,15,16,18,19… Valves 21... Film formation table 22…Discharge line 23…Butterfly valve 24…Pump 25…raw material liquid 26, 27…Pressure gauge

Claims

1. a passivation process for passivating a portion of the first major surface of the substrate to form a passivation region; a forming process of forming a thin film on the first main surface by atomic layer deposition after the passivation process; A method for producing a thin film, comprising:

2. the area other than the inactivated area is a metal-containing portion; The inactivation region is a substrate. The method for producing the thin film according to claim 1 .

3. The method for producing a thin film according to claim 2 , wherein the metal-containing portion is a wiring.

4. The method for producing a thin film according to claim 2 , wherein the metal-containing portion contains at least one selected from the group consisting of Cu and Pd.

5. In a substrate having a silicon-containing base material and a metal-containing portion containing at least one selected from the group consisting of Cu and Pd located on the base material, a passivation treatment is performed to passivate the base material to form a passivated region; a forming process of forming a thin film on the first main surface by atomic layer deposition after the passivation process; A method for producing a thin film, comprising:

6. The method for producing a thin film according to claim 1 or 5, wherein a silane compound is used as a passivation treatment agent in the passivation treatment.

7. 7. The method for producing a thin film according to claim 6, wherein the silane compound is at least one selected from the group consisting of 1,1,1,3,3,3-hexamethyldisilazane, 1,1,3,3-tetramethyldisilazane, N,N-dimethylaminotrimethylsilane, bis(N,N-dimethylamino)dimethylsilane, and methoxytrimethylsilane.

8. The forming process includes: A vaporization process for vaporizing a raw material liquid containing a raw material compound; a deposition process for depositing the vaporized source compound on the first main surface; and a film formation process for forming the thin film on the region other than the inactivated region by reducing the region with a reducing gas after the deposition process; Including, The method for producing the thin film according to claim 1 or 5.

9. The raw material compound contains a metal atom, The method for producing a thin film according to claim 8 , wherein the metal atoms are cobalt or palladium.

10. 9. The method for producing a thin film according to claim 8, wherein the vapor pressure of the raw material compound at 100° C. is 0.4 Torr or more.

11. The raw material compound includes a metal atom and a ligand including a coordination element that is coordinated to the metal atom, The coordination element is at least one selected from C, N, O, and Si; The method for producing a thin film according to claim 8 .

12. The method for producing a thin film according to claim 11 , wherein the coordination element is at least one selected from C and O.

13. The raw material compound includes a ligand, The ligand comprises at least one of a monodentate ligand and a polydentate ligand; The method for producing a thin film according to claim 8 .

14. The polydentate ligand comprises at least one of a bidentate ligand and a tridentate ligand; The method for producing a thin film according to claim 13.

15. The method for producing a thin film according to claim 13, wherein the monodentate ligand is at least one selected from the group consisting of carbonyl, alkyne, alkyl, amine, aminoalkyl, and hydride.

16. the polydentate ligand is a bidentate ligand, The bidentate ligand is at least one selected from an alkyldiene, a cyclopentadiene, and an acetylacetonate. The method for producing a thin film according to claim 13.

17. The raw material compound is 【Chemistry 1】 The method for producing a thin film according to claim 8, wherein the at least one selected from the following is selected:

18. an etching process for performing atomic layer etching after the formation process; The method for producing the thin film according to claim 1 or 5, comprising:

19. The method for producing a thin film according to claim 18 , further comprising the steps of: performing the passivation treatment, the formation treatment, and the atomic layer etching in this order.

20. A method for manufacturing a wiring board including wiring having a wiring distance S, the method comprising the steps of: forming a thin film on the wiring by the manufacturing method according to claim 1 or 5 in the obtained wiring board; and determining whether the leakage current between the wiring is a value that is greater than the value of the leakage current between the wiring. The leakage current between wirings is 60% or less compared to a leakage current between wirings when a thin film is formed on the wiring by a formation process of forming a thin film using an atomic layer deposition method without performing a passivation process. A method for manufacturing a wiring board.

21. A method for manufacturing a wiring board including wiring having a wiring distance S, the method comprising the steps of: forming a thin film on the wiring by the manufacturing method according to claim 18; and determining whether the leakage current between the wiring is large enough to cause a leakage current to flow between the wiring and the wiring. The leakage current between wirings is 20% or less compared to a leakage current between wirings when a thin film is formed on the wiring by a formation process of forming a thin film by an atomic layer deposition method without performing a passivation process and an atomic layer etching process. A method for manufacturing a wiring board.

22. A wiring substrate including a plurality of wirings having an inter-wiring distance S on the substrate, a passivation process for passivating a base material exposed on the first main surface of the substrate to form a passivation region; After the passivation treatment, a thin film is formed on the first main surface by an atomic layer deposition method. When the thin film is formed on the wiring, the leakage current value between the wirings is A process for forming a thin film on a wiring by atomic layer deposition without performing a passivation process is performed, and the thin film is formed on the wiring by the process, with respect to a leakage current value between the wirings. 60% or less.

23. A wiring substrate including a plurality of wirings having an inter-wiring distance S on the substrate, a passivation process for passivating a base material exposed on the first main surface of the substrate to form a passivation region; forming a thin film on the first main surface by atomic layer deposition after the passivation treatment; After the formation process, an etching process is performed to perform atomic layer etching, and when the thin film is formed on the wiring, the leakage current value between the wirings is A thin film is formed on the wiring by a formation process using an atomic layer deposition method without performing a passivation process and an atomic layer etching process, with respect to a leakage current value between the wirings when the thin film is formed on the wirings by the formation process, 20% or less.

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