Film manufacturing system

Abstract

To provide a film manufacturing system to which a film manufacturing function is applied in a cost lower as compared with the case that a new cluster part is provided.SOLUTION: A film manufacturing system includes: a first cluster part that includes a plurality of first processing devices and a first transport part that transports a coated film manufacturing base material between the first processing devices; a second cluster part that includes a plurality of second processing devices and a second transport part that transports the coated film manufacturing base material between the second processing device; and a transport and reception part that transports and receives the coated film manufacturing base material in which at least a first layer is manufactured by a first processing device of the first cluster part from the first cluster part to the second cluster part. The transport and reception part comprises a film manufacturing part forming a film to the film manufacturing base material.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a deposition system having a plurality of cluster units. [Background technology]

[0002] Conventionally, a cluster-type manufacturing apparatus has been used to manufacture each layer of an organic EL device (for example, Patent Document 1). The manufacturing apparatus of Patent Document 1 has a plurality of cluster sections, each of which has a plurality of film deposition chambers and mask chambers arranged around a transfer chamber, and adjacent cluster sections are connected by a connecting chamber. The manufacturing apparatus of Patent Document 1 is capable of transporting the substrate to each film deposition chamber by a transport robot in the transport chamber, and depositing the layers that constitute the organic EL device in each film deposition chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-167957 A Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, in order to increase the production capacity of organic EL devices or to manufacture a plurality of types of organic EL devices using the same film-forming equipment, it is necessary to increase the number of film-forming chambers. However, the cluster section is configured with a transfer chamber at the center and includes a film deposition chamber in which each layer of the organic EL device is deposited, a waiting chamber in which deposition is completed in the next film deposition chamber, and a delivery chamber in which deposition is handed over to the adjacent cluster section (hereinafter also referred to as the film deposition chamber, etc.), all arranged in a ring shape, so that the number of film deposition chambers, etc. that can be installed adjacent to one transfer chamber is limited. Therefore, when the number of film-forming chambers, etc. exceeds the upper limit of the number of film-forming chambers, etc. that can be installed adjacent to the transfer chamber, it is necessary to add a new cluster section via a delivery chamber, but it is difficult to add a new cluster section due to spatial and cost constraints.

[0005] Therefore, an object of the present invention is to provide a film-forming system that can impart a film-forming function at a lower cost than when a new cluster section is provided. [Means for solving the problem]

[0006] One aspect of the present invention for solving the above-mentioned problems is a film forming system comprising a first cluster section having a plurality of first processing devices and a first transport section for transporting a substrate to be filmed between each of the first processing devices, a second cluster section having a plurality of second processing devices and a second transport section for transporting a substrate to be filmed between each of the second processing devices, and a transfer section for transferring a substrate to be filmed on which at least a first layer has been formed by a first processing device of the first cluster section from the first cluster section to the second cluster section, and the transfer section is equipped with a film forming section for forming a film on the substrate to be filmed.

[0007] According to this aspect, a film forming section that forms a film on the substrate to be film-formed is provided in the transfer section that transports the substrate to be film-formed from the first cluster section to the second cluster section, so that the film forming function can be imparted at lower cost and with fewer spatial constraints compared to the case where a new cluster section is provided.

[0008] In a preferred aspect, the film forming section has a substrate transport section and a gas releasing section, and while transporting the substrate to be filmed by the substrate transport section, the film forming section releases a film forming gas from the gas releasing section onto the substrate to be filmed, thereby forming a second layer on the substrate to be filmed.

[0009] According to this aspect, the transport operation between the cluster parts and the film formation operation on the substrate to be film-formed can be combined, and the film formation time in the entire film formation system can be shortened compared to the conventional case.

[0010] In a more preferred aspect, the film-forming section has a second gas emission section, and while the substrate to be film-formed is transported by the substrate transport section, the film-forming section emits a film-forming gas from the second gas emission section to the substrate to be film-formed on which the second layer is laminated, and forms a third layer on the substrate to be film-formed.

[0011] According to this aspect, the second layer and the third layer can be continuously formed while the substrate to be film-formed is being transported in the substrate transport section, so that the film formation time can be further shortened compared to the case where the second layer and the third layer are formed individually in separate film formation devices.

[0012] A preferred aspect is a film forming system used for manufacturing an organic EL device having an organic EL element in which a first electrode layer, an emitting functional layer, and a second electrode layer are laminated on a substrate, and the organic EL element is sealed by the substrate and a sealing layer, wherein the film forming unit forms a part or all of at least one layer selected from the group consisting of the emitting functional layer, the second electrode layer, and the sealing layer.

[0013] According to this aspect, it is suitable for producing an organic EL device.

[0014] In a more preferred aspect, the light-emitting functional layer has a first light-emitting unit, a connection unit, and a second light-emitting unit in this order, and when current is applied, the connection unit is capable of injecting electrons into the first light-emitting unit and injecting holes into the second light-emitting unit, and the film-forming unit forms a film of some or all of the connection unit.

[0015] According to this aspect, the light-emitting layer of the first light-emitting unit and the light-emitting layer of the second light-emitting unit can be formed in separate cluster parts, and the occurrence of contamination and the like can be suppressed.

[0016] In a more preferred aspect, the light-emitting functional layer has a plurality of organic layers, and the film forming unit forms an organic layer among the plurality of organic layers that has the shortest film forming time.

[0017] According to this aspect, the time that the substrate to be film-formed remains in the film-forming section can be shortened, and a decrease in productivity due to the substrate to be film-formed remaining in the film-forming section can be suppressed.

[0018] A more preferred aspect is a film forming system used for manufacturing a plurality of types of organic EL devices, the plurality of types of organic EL devices including a first organic EL device and a second organic EL device, an emitting functional layer of the first organic EL device has a common organic layer in common with an emitting functional layer of the second organic EL device, and the film forming unit forms the common organic layer.

[0019] According to this aspect, the transfer section can be shared between the first organic EL device and the second organic EL device, and the organic layers formed in the film formation section can be one type of common organic layer, thereby reducing the risk of contamination and other problems due to film formation in the film formation section.

[0020] One aspect of the present invention is a film forming system comprising a first cluster section having one or more first processing devices and a first transport section for transporting a substrate to be filmed, a second cluster section having one or more second processing devices and a second transport section for transporting the substrate to be filmed, and a transfer section for transferring the substrate to be filmed that has been treated by the first processing device of the first cluster section from the first cluster section to the second cluster section, the transfer section comprising a film forming section for forming a film on the substrate to be filmed.

[0021] According to this aspect, a film forming section that forms a film on the substrate to be film-formed is provided in the transfer section that transports the substrate to be film-formed from the first cluster section to the second cluster section, so that the film forming function can be imparted at lower cost and with fewer spatial constraints compared to the case where a new cluster section is provided. Effect of the Invention

[0022] According to the film-forming system of the present invention, a film-forming function is imparted at a lower cost than when a new cluster portion is provided. [Brief description of the drawings]

[0023] [Figure 1] 1 is a configuration diagram that shows a film forming system according to a first embodiment of the present invention. [Diagram 2] 2 is a perspective view showing a film-forming section of the transfer section in FIG. 1. FIG. [Diagram 3] FIG. 2 is an explanatory diagram showing a schematic state when a substrate is transported by the transfer section of FIG. 1, (a) to (c) showing cross-sectional views when the substrate is transported from the upstream side to the downstream side in this order. [Figure 4] FIG. 2 is a cross-sectional view of an organic EL device that can be suitably formed using the film forming system of FIG. 1, and hatching has been omitted for ease of understanding. [Diagram 5] 1A and 1B are explanatory diagrams of a film-forming system according to another embodiment of the present invention, in which (a) is a cross-sectional view of an embodiment in which the film-forming section of the transfer section has multiple gas release sections, and (b) is an oblique view of an embodiment in which the film-forming section of the transfer section is in a side position. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] Hereinafter, an embodiment of the present invention will be described in detail.

[0025] The film forming system 1 according to the first embodiment of the present invention is a manufacturing system mainly used for manufacturing an organic EL device 100 shown in FIG. The film forming system 1 is a cluster-type film forming apparatus, and includes a first cluster section 2, a second cluster section 3, and a delivery section 5 as shown in FIG. One of the features of the film forming system 1 of this embodiment is that the delivery section 5 performs delivery between the cluster sections 2 and 3, and also enables film formation on the film-forming substrate 200, which is a work-in-progress of the organic EL device 100. This will be taken into consideration in the following detailed description. The work-in-progress (intermediate product) of the organic EL device 100 is also simply referred to as the film-forming substrate 200.

[0026] (1st Cluster Part 2) As shown in FIG. 1, the first cluster section 2 includes a first substrate loading device 20, a first deposition device 21 (first processing device), a second deposition device 22 (first processing device), a third deposition device 23 (first processing device), a first substrate unloading device 24, a first substrate standby device 25, a pre-processing device 26 (first processing device), and a first conveying device 27 (first conveying section). In the first cluster section 2, the various devices 20 to 26 are adjacent to a first transfer device 27 and are arranged side by side in the circumferential direction with the first transfer device 27 at the center.

[0027] The first substrate delivery device 20 is a delivery device that delivers the conductive substrate 101, which is the substrate of the organic EL device 100, into the first cluster unit 2 from the outside.

[0028] The first deposition apparatus 21 is a vacuum deposition apparatus that sprays a material gas onto the substrate 200 to be deposited, which is the in-process substrate of the organic EL device 100, to deposit a film. Specifically, the first deposition apparatus 21 is a gas carrier deposition apparatus that pressurizes the material gas using a carrier gas and sprays it onto the substrate 200 to be deposited. The first deposition apparatus 21 has a film formation chamber, a gas generator that vaporizes or sublimates a thin film material into a material gas, a carrier gas supply unit that can supply a carrier gas, and a gas release unit. The first deposition apparatus 21 is capable of pushing out the material gas generated by the gas generator with the carrier gas supplied from the carrier gas supply unit, and releasing the material gas from the gas release unit toward the film formation substrate 200 in the film formation chamber, thereby forming a thin film on the film formation substrate 200.

[0029] The second deposition device 22 is a vacuum deposition device that sprays a material gas onto the deposition substrate 200 to form a film, and more specifically, is a gas carrier deposition device that pressure-transports the material gas using a carrier gas and sprays it onto the deposition substrate 200. The second deposition apparatus 22 has a film formation chamber, a gas generator that vaporizes or sublimates a thin film material into a material gas, a carrier gas supply unit capable of supplying a carrier gas, and a gas release unit, similar to the first deposition apparatus 21. The second deposition apparatus 22 is capable of pushing out the material gas generated by the gas generator with the carrier gas supplied from the carrier gas supply unit, and releasing the material gas from the gas release unit toward the film formation substrate 200 in the film formation chamber, thereby forming a thin film on the film formation substrate 200.

[0030] The third deposition apparatus 23 is a vacuum deposition apparatus that sprays a material gas onto the film-forming substrate 200 to form a film, and specifically, is a deposition apparatus that sprays a material gas directly onto the film-forming substrate 200 without using a carrier gas. The third deposition apparatus 23 has a film formation chamber, a gas generator that vaporizes or sublimates a thin film material into a material gas, and a gas release section. The third deposition apparatus 23 releases the material gas generated by the gas generator from the gas release section toward the film formation substrate 200 in the film formation chamber by the atmospheric pressure of the material gas and / or the internal pressure difference between the gas generator and the film formation chamber, and is capable of forming a thin film on the film formation substrate 200. That is, the third deposition apparatus 23 differs from the deposition apparatuses 21 and 22 in that the material gas is not diluted by the carrier gas.

[0031] The first substrate carrying-out device 24 is a carrying-out device that carries out the film-forming substrate 200 from inside the first cluster section 2 toward the delivery section 5.

[0032] The first substrate standby device 25 is a portion where the substrate 200 is temporarily placed and waits when the substrate 200 is transferred between the devices 20 to 24, for example when the device to be used in the next process is in use.

[0033] The pretreatment device 26 is a section for performing pretreatment such as plasma treatment and heat treatment on the film-forming substrate 200, which is a substrate in process for the organic EL device 100.

[0034] The first transport device 27 is a transport section that transports the film-forming substrate 200 between the various devices 20-26. The first transport device 27 is provided with a transport means such as a robot hand, and the transport means enables the film-forming substrate 200 to be transported between the various devices 20-26.

[0035] (Second Cluster Part 3) As shown in FIG. 1, the second cluster section 3 includes a second substrate loading device 30, a fourth deposition device 31 (second processing device), a fifth deposition device 32 (second processing device), a sixth deposition device 33 (second processing device), a CVD device 34 (second processing device), a second substrate unloading device 35, a second substrate standby device 36, and a second transport device 37 (second transport section). In the second cluster section 3, the various devices 30 to 36 are adjacent to the second transfer device 37 and are arranged side by side in the circumferential direction with the second transfer device 37 at the center.

[0036] The fourth deposition apparatus 31 is a vacuum deposition apparatus that sprays a material gas onto the substrate 200 to form a film, and more specifically, is a gas carrier deposition apparatus that pressure-transports the material gas using a carrier gas and sprays it onto the substrate 200 to form a film. The fourth deposition apparatus 31 has a film formation chamber, a gas generator that vaporizes or sublimates a thin film material into a material gas, a carrier gas supply unit that can supply a carrier gas, and a gas release unit, similar to the first deposition apparatus 21. The fourth deposition apparatus 31 is capable of pushing out the material gas generated by the gas generator with the carrier gas supplied from the carrier gas supply unit, and releasing the material gas from the gas release unit toward the film formation substrate 200 in the film formation chamber, thereby forming a thin film on the film formation substrate 200.

[0037] The fifth deposition apparatus 32 is a vacuum deposition apparatus that sprays a material gas onto the substrate 200 to form a film, and more specifically, is a gas carrier deposition apparatus that pressure-transports the material gas using a carrier gas and sprays it onto the substrate 200 to form a film. The fifth deposition apparatus 32 has a film formation chamber, a gas generator that vaporizes or sublimates a thin film material into a material gas, a carrier gas supply unit capable of supplying a carrier gas, and a gas release unit, similar to the first deposition apparatus 21. The fifth deposition apparatus 32 is capable of pushing out the material gas generated by the gas generator with the carrier gas supplied from the carrier gas supply unit, and releasing the material gas from the gas release unit toward the film formation substrate 200 in the film formation chamber, thereby forming a thin film on the film formation substrate 200.

[0038] The sixth deposition apparatus 33 is a vacuum deposition apparatus that sprays a material gas onto the film-forming substrate 200 to form a film, and specifically, is a deposition apparatus that sprays a material gas directly onto the film-forming substrate 200 without using a carrier gas. The sixth deposition apparatus 33, like the third deposition apparatus 23, has a film formation chamber, a gas generator that vaporizes or sublimates a thin film material into a material gas, and a gas release section. The sixth deposition apparatus 33 releases the material gas generated in the gas generator from the gas release section toward the film formation substrate 200 in the film formation chamber by the atmospheric pressure of the material gas and / or the internal pressure difference between the gas generator and the film formation chamber, and is capable of forming a thin film on the film formation substrate 200. That is, the sixth deposition apparatus 33 differs from the deposition apparatuses 31 and 32 in that the material gas is not diluted by the carrier gas.

[0039] The CVD apparatus 34 is an apparatus for spraying a material gas onto the substrate 200 on which a film is to be formed, and forming a film by chemical vapor deposition. Specifically, the CVD apparatus 34 is provided with a gas discharge section, a substrate holding section, and a plasma generator in a deposition chamber. A film can be deposited on the substrate 200 by discharging a material gas from the gas discharge section while generating plasma with the plasma generator toward the substrate 200 held by the substrate holding section.

[0040] The second substrate carrying-out device 35 is a carrying-out device that carries out the film-forming substrate 200 from inside the second cluster section 3 to the outside.

[0041] The second substrate standby device 36 is a device for temporarily placing the substrate 200 to be film-formed and waiting when the substrate 200 to be film-formed is transferred between the devices 30 to 35, for example when the device to be used in the next step is in use.

[0042] The second transport device 37 is a transport section that transports the film-forming substrate 200 between the various devices 30-36. The second transport device 37 is provided with a transport means such as a robot hand, and the transport means enables the film-forming substrate 200 to be transported between the various devices 30 to .

[0043] (Delivery Department 5) The transfer section 5 is a section where the substrate 200 to be filmed is transferred between the first cluster section 2 and the second cluster section 3, and specifically, where the substrate 200 to be filmed, which has been transported from the first substrate transport device 24 of the first cluster section 2, is transported into the second substrate transport device 30 of the second cluster section 3. The delivery section 5 includes a film forming section 50 located between the first substrate carrying-out device 24 and the second substrate carrying-in device 30 and midway in the transport direction T1 of the substrate 200 to be film-formed. The film forming section 50 includes a transport conveyor 52 (substrate transport section) and a film forming device 53, as shown in FIGS.

[0044] The transport conveyor 52 is a substrate transport section that transports the film-forming substrate 200 from the first substrate-carrying device 24 side to the second substrate-carrying device 30 side. The transport conveyor 52 of this embodiment is a roller conveyor made up of a plurality of transport rollers 55, and each transport roller 55 is arranged at intervals in the transport direction T1. The tops of the transport rollers 55 are at the same height, and the tops form a transport surface along which the film-forming substrate 200 can run. The conveying rollers 55 are each suspended by a belt member (not shown) and are capable of rotating in unison with each other.

[0045] The film forming apparatus 53 is a vacuum deposition apparatus that sprays a material gas onto the substrate 200 to form a film. The film forming apparatus 53 in this embodiment is a gas carrier deposition apparatus that pressurizes the material gas using a carrier gas and sprays it onto the substrate 200 to form a film. The film forming apparatus 53 has one or more gas generators 70, a carrier gas supply unit 71, and a gas release unit 72, as shown in FIG. Further, the film forming apparatus 53 of this embodiment is an up-deposition type vapor deposition apparatus in which the opening 75 of the gas ejection section 72 faces vertically upward.

[0046] The gas generator 70 is a device that vaporizes or sublimes the thin film material to be deposited to generate a material gas.

[0047] The carrier gas supply unit 71 is a portion capable of supplying a carrier gas, and is capable of adjusting the total flow rate of the deposition gas discharged from the gas discharge unit 72, thereby adjusting the deposition speed. The carrier gas is an inert gas that does not react with the material gas, and is preferably a rare gas such as nitrogen gas or argon gas, and more preferably argon gas.

[0048] The gas discharge section 72 is a section where a material gas is sprayed onto the substrate 200 to be film-formed, and has an opening 75 extending in a direction intersecting the transport direction T1 when the substrate 200 to be film-formed or the transport conveyor 52 is viewed in a plane. In the gas releasing section 72 of this embodiment, the opening 75 extends in the axial direction of the transport roller 55 as shown in FIG. When viewed in a plane, the gas release section 72 has an opening 75 exposed between adjacent conveying rollers 55, 55 in the conveying direction T1, making it possible to supply the material gas to the film-forming substrate 200 side without being blocked by the conveying rollers 55, 55.

[0049] (Organic EL device 100) As shown in FIG. 4, the organic EL device 100 includes an organic EL element 110 in which a light-emitting functional layer 105 and a second electrode layer 106 are laminated on a first electrode layer 103 of a conductive substrate 101, and in which the first electrode layer 103, the light-emitting functional layer 105, and the second electrode layer 106 are superimposed when the conductive substrate 101 is viewed in a plane. In the organic EL device 100 , a sealing layer 107 is laminated on an organic EL element 110 , and the organic EL element 110 is sealed by a base material 102 of a conductive base material 101 and the sealing layer 107 . The organic EL device 100 of this embodiment is a bottom-emission type organic EL device in which, when a voltage is applied between the first electrode layer 103 and the second electrode layer 106, a light-emitting region, which is the overlapping portion of the first electrode layer 103 and the second electrode layer 106 of the light-emitting functional layer 105, emits light, and the light is emitted from the substrate 102 side of the conductive substrate 101.

[0050] (Conductive base material 101) The conductive substrate 101 is a substrate that has a planar shape and is conductive, and is configured by laminating a first electrode layer 103 on a substrate 102 .

[0051] (Base material 102) The base material 102 is not particularly limited as long as it can support the organic EL element 110, and for example, a light-transmitting substrate such as a glass substrate, a flexible substrate, or the like can be used. The base material 102 of this embodiment is a light-transmitting insulating substrate that has light-transmitting and insulating properties and is capable of extracting light generated in the organic EL element 110 when a voltage is applied. In addition, the base material 102 has a sealing property, and also serves as a sealing substrate that seals the organic EL element 110 together with the sealing layer 107 .

[0052] (First electrode layer 103) The first electrode layer 103 is a transparent conductive layer having transparency and conductivity, and can be, for example, a transparent conductive oxide layer made of a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), or zinc oxide (ZnO).

[0053] (Light-emitting functional layer 105) As shown in FIG. 4, the light-emitting functional layer 105 is configured by laminating a first light-emitting unit 111, a connection unit 112, and a second light-emitting unit 113 in this order from the first electrode layer 103 side toward the second electrode layer 106 side.

[0054] (First light emitting unit 111) First light-emitting unit 111 is a blue light-emitting unit that emits blue light when lit, and is a short-wavelength light-emitting unit that emits light with a shorter wavelength than second light-emitting unit 113. As shown in FIG. 4, the first light-emitting unit 111 includes, in this order from the first electrode layer 103 side toward the connection unit 112 side, a first hole injection layer 120 (first layer), a first hole transport layer 121 (first layer), a first organic light-emitting layer 122 (first layer), and a first electron transport layer 123 (first layer).

[0055] The first hole injection layer 120 contains a hole injection material, is adjacent to and in contact with the first electrode layer 103 in the thickness direction, and is a layer that injects holes toward the first hole transport layer 121 side.

[0056] The first hole transport layer 121 contains a hole transport material and transports the holes injected from the first hole injection layer 120 toward the first organic light emitting layer 122 .

[0057] First organic light-emitting layer 122 is a blue light-emitting layer that contains a charge transport material that transports electrons or holes as a host material and a blue light-emitting material as a first dopant material. In the first organic light-emitting layer 122 of this embodiment, an electron transport material or a hole transport material is used as the host material, and a fluorescent blue light-emitting material is used as the first dopant material.

[0058] The first electron transport layer 123 contains an electron transport material, is adjacent to and in contact with the connection unit 112 in the thickness direction, and transports electrons injected from the connection unit 112 toward the first organic light-emitting layer 122.

[0059] (Connection unit 112) The connection unit 112 injects electrons into the first light-emitting unit 111 side and injects holes into the second light-emitting unit 113 side. As shown in FIG. 4, the connection unit 112 has, in this order from the first light-emitting unit 111 side to the second light-emitting unit 113 side, a first electron-side connection layer 130 (first layer), a second electron-side connection layer 131 (first layer), a buffer layer 132 (first layer), and a hole-side connection layer 133 (second layer).

[0060] The first electron-side connecting layer 130 is an electron-injecting layer that contains an electron injection material, is adjacent to and in contact with the first electron transport layer 123 of the first light-emitting unit 111 in the thickness direction, and, together with the second electron-side connecting layer 131, injects electrons into the first electron transport layer 123.

[0061] The second electron-side connecting layer 131 is an electron-injecting layer that contains an electron-injecting material different from that of the first electron-side connecting layer 130.

[0062] The buffer layer 132 contains an insulating material and is a layer that reduces the carrier injection barrier between the second electron side connection layer 131 and the hole side connection layer 133, and is an insulating layer that has insulating properties.

[0063] The hole-side connection layer 133 is a hole injection layer that contains a hole injection material, is adjacent to and in contact with the second hole injection layer 140 of the second light-emitting unit 113 in the thickness direction, and injects holes into the second hole injection layer 140 of the second light-emitting unit 113.

[0064] (Second light emitting unit 113) The second light-emitting unit 113 is a reddish green light-emitting unit that emits reddish green light when lit, and is a long wavelength light-emitting unit that emits light with a longer wavelength than the first light-emitting unit 111. As shown in FIG. 4 , the second light-emitting unit 113 includes, in this order from the connection unit 112 side toward the second electrode layer 106 side, a second hole injection layer 140, a second hole transport layer 141, a second organic light-emitting layer 142, a second electron transport layer 143, and a second electron injection layer 144.

[0065] The second hole injection layer 140 contains a hole injection material, is adjacent to and in contact with the hole-side connection layer 133 of the connection unit 112 in the thickness direction, and injects holes injected from the hole-side connection layer 133 of the connection unit 112 toward the second hole transport layer 141.

[0066] The second hole transport layer 141 contains a hole transport material and transports the holes injected from the second hole injection layer 140 toward the second organic light emitting layer 142 .

[0067] Second organic light-emitting layer 142 is a red-green light-emitting layer that contains a charge transport material that transports electrons or holes as a host material, a red light-emitting material as a second dopant material, and a green light-emitting material as a third dopant material. In this embodiment, the second organic light-emitting layer 142 uses an electron transport material or a hole transport material as a host material, a phosphorescent red light-emitting material as a second dopant material, and a phosphorescent green light-emitting material as a third dopant material.

[0068] The second electron transport layer 143 contains an electron transport material and transports the electrons injected from the second electron injection layer 144 toward the second organic light emitting layer 142 .

[0069] The second electron injection layer 144 contains an electron injection material, is adjacent to and in contact with the second electrode layer 106 in the thickness direction, and is a layer that injects electrons toward the second electron transport layer 143 side.

[0070] (Second electrode layer 106) The second electrode layer 106 is an electrode layer that is conductive and pairs with the first electrode layer 103 . The second electrode layer 106 is made of a conductive material, and for example, a metal layer containing a metal such as silver (Ag), aluminum (Al), zirconium (Zr), titanium (Ti), silicon (Si), lithium (Li), or an alloy of these metals, or a laminate of two or more of these metals can be used. As shown in FIG. 4, the second electrode layer 106 of this embodiment has a multi-layer structure in which a first metal layer 150 made of lithium metal or the like and a second metal layer 151 made of silver or the like are laminated.

[0071] (Sealing layer 107) The sealing layer 107 has sealing properties and seals the organic EL element 110 together with the base material 102 . The sealing layer 107 is a sealing layer formed by a dry method such as a CVD method or a PVD method using a CVD apparatus or a PVD apparatus, and for example, an inorganic sealing layer such as silicon oxide or silicon nitride can be used. The sealing layer 107 of this embodiment has a multi-layer structure in which a first inorganic sealing layer 160 made of silicon nitride or the like and a second inorganic sealing layer 161 made of silicon oxide or the like are laminated.

[0072] (Organic EL element 110) In the organic EL element 110, when a voltage is applied between the first electrode layer 103 and the second electrode layer 106, the light-emitting functional layer 105 between the first electrode layer 103 and the second electrode layer 106 emits light, and when the substrate 102 is viewed in a plane, it is possible to form a light-emitting region that extends in a planar shape.

[0073] Next, a method for manufacturing the organic EL device 100 using the film forming system 1 will be described.

[0074] First, the conductive substrate 101 is carried into the first cluster section 2 from the first substrate carrying device 20 and introduced into the pre-treatment device 26 by the first conveying device 27, and the first electrode layer 103 of the conductive substrate 101 is subjected to pre-treatment such as cleaning and modification by the pre-treatment device 26.

[0075] When the pretreatment of conductive substrate 101 is completed in pretreatment device 26, the pretreated conductive substrate 101 is removed from pretreatment device 26 by first transport device 27 and introduced into first vapor deposition device 21, and first hole injection layer 120 of first light-emitting unit 111 is formed on first electrode layer 103 of conductive substrate 101 by first vapor deposition device 21.

[0076] When the formation of the first hole injection layer 120 is completed in the first vapor deposition apparatus 21, the conductive substrate 101 on which the first hole injection layer 120 has been formed (hereinafter, also referred to as the substrate 200, including the layers on the conductive substrate 101) is removed from the first vapor deposition apparatus 21 by the first transfer device 27 and introduced into the second vapor deposition apparatus 22. The second vapor deposition apparatus 22 then forms, in this order, the first hole transport layer 121, the first organic light-emitting layer 122, and the first electron transport layer 123 of the first light-emitting unit 111, and the first electron-side connection layer 130 of the connection unit 112 on the first hole injection layer 120 of the substrate 200.

[0077] When the deposition of the first electron side connection layer 130 is completed in the second deposition apparatus 22, the film-formed substrate 200 is removed from the second deposition apparatus 22 by the first transport device 27 and introduced into the third deposition apparatus 23, and the second electron side connection layer 131 and buffer layer 132 of the connection unit 112 are deposited in this order on the first electron side connection layer 130 of the film-formed substrate 200 by the third deposition apparatus 23.

[0078] When deposition of the buffer layer 132 is completed in the third deposition apparatus 23, the substrate 200 to be deposited is removed from the third deposition apparatus 23 by the first transport device 27, introduced into the first substrate removal device 24, and removed from the first cluster section 2 to the transfer section 5.

[0079] When the substrate 200 to be filmed is introduced into the delivery section 5, the substrate 200 to be filmed is transported by the transport conveyor 52 in the film-forming section 50 of the delivery section 5, while material gas is sprayed from the gas release section 72 of the film-forming device 53 onto the buffer layer 132 of the substrate 200 to form a hole-side connection layer 133, and the substrate is then transported to the second substrate delivery device 30 of the second cluster section 3. That is, the material gas for the hole-side connection layer 133 is sprayed from the gas discharge section 72 of the film-forming device 53 onto the film-forming substrate 200 while it travels on the conveying surface of the transport conveyor 52, and the hole-side connection layer 133 is formed.

[0080] The substrate 200 is transported from the delivery section 5 to the second substrate delivery device 30 of the second cluster section 3, where it is then loaded into the second cluster section 3 by the second substrate delivery device 30 and introduced into the fourth vapor deposition device 31 by the second transport device 37. The second hole injection layer 140 of the second light-emitting unit 113 is deposited on the hole-side connection layer 133 of the substrate 200 by the fourth vapor deposition device 31.

[0081] When the formation of the second hole injection layer 140 in the fourth vapor deposition apparatus 31 is completed, the substrate 200 to be film-formed is removed from the fourth vapor deposition apparatus 31 by the second transfer device 37 and introduced into the fifth vapor deposition apparatus 32, and the second hole transport layer 141, second organic light-emitting layer 142, second electron transport layer 143, and second electron injection layer 144 of the second light-emitting unit 113 are formed in this order on the second hole injection layer 140 of the substrate 200 to be film-formed by the fifth vapor deposition apparatus 32.

[0082] When the deposition of the second electron injection layer 144 is completed in the fifth deposition apparatus 32, the substrate 200 to be deposited is removed from the fifth deposition apparatus 32 by the second transport device 37 and introduced into the sixth deposition apparatus 33. The sixth deposition apparatus 33 then deposits a first metal layer 150 and a second metal layer 151 in this order on the second electron injection layer 144 of the substrate 200 to form the second electrode layer 106.

[0083] When the deposition of the second electrode layer 106 is completed in the sixth deposition apparatus 33, the substrate 200 to be deposited is removed from the sixth deposition apparatus 33 by the second transport device 37 and introduced into the CVD apparatus 34, and the first inorganic sealing layer 160 and the second inorganic sealing layer 161 are deposited in this order on the second metal layer 151 of the substrate 200 to be deposited by the CVD apparatus 34, thereby forming the sealing layer 107.

[0084] When deposition of the sealing layer 107 is completed in the CVD apparatus 34, the substrate 200 to be deposited is removed from the CVD apparatus 34 by the second transport device 37, introduced into the second substrate removal device 35, and removed from the second cluster section 3 to the outside, and the organic EL device 100 is manufactured.

[0085] According to the film-forming system 1 of this embodiment, a film-forming section 50 that forms a film on the substrate 200 to be film-formed is provided in the transfer section 5, which transfers the substrate 200 to be film-formed from the first cluster section 2 to the second cluster section 3. Therefore, compared to the case where a new cluster section is provided, the film-forming function can be imparted at lower cost and there are fewer spatial constraints.

[0086] According to the film forming system 1 of this embodiment, the film forming section 50 releases material gas from the gas release section 72 onto the substrate 200 to be filmed while transporting the substrate 200 on the transport conveyor 52, and forms a hole-side connection layer 133 on the substrate 200 to be filmed. This combines the transport operation between the cluster sections 2 and 3 with the film forming operation on the substrate 200 to be filmed, and therefore the film forming time for the entire film forming system 1 can be shortened compared to conventional systems.

[0087] In the above embodiment, one type of organic EL device 100 is manufactured by the film-forming system 1, but the present invention is not limited to this. A plurality of types of organic EL devices 100 may be formed by the film-forming system 1. For example, when the first organic EL device 100a and the second organic EL device 100b are manufactured by the film-forming system 1, a common organic layer common to the organic EL devices 100a and 100b may be formed in the film-forming unit 50 of the transfer unit 5. In this way, the organic layer formed in the film-forming unit 50 can be limited to one type, and the risk of contamination due to film formation in the film-forming unit 50 can be suppressed.

[0088] In the above embodiment, the hole-side connection layer 133 is formed by the film-forming unit 50 of the delivery unit 5, but the present invention is not limited to this, and other layers constituting the organic EL device 100 may be formed by the film-forming unit 50 of the delivery unit 5. In other words, the film-forming unit 50 may form a part or the whole of at least one layer selected from the group consisting of the light-emitting functional layer 105, the second electrode layer 106, and the sealing layer 107. Furthermore, the film-forming section 50 of the transfer section 5 may form an organic layer that requires the shortest film-forming time among the organic layers that constitute the organic EL device 100. This can shorten the residence time in the transfer section 5, and can suppress a decrease in productivity due to the residence of the film-formed substrate 200 in the transfer section 5.

[0089] In the embodiment described above, the hole-side connection layer 133, which is a part of the layer of the connection unit 112, is formed by the film-forming section 50 of the delivery section 5, but the present invention is not limited to this. All layers of the connection unit 112 may be formed by the film-forming section 50 of the delivery section 5.

[0090] In the above embodiment, the film forming section 50 of the delivery section 5 forms a film while transporting the substrate 200 to be film-formed, but the present invention is not limited to this. The film forming section 50 of the delivery section 5 may be stopped (stationary) with the substrate 200 facing the gas release section 72, and may spray the material gas from the gas release section 72 in the stopped state (stationary state) to form a film. In this case, the gas release section 72 may be a point source having only one opening 75 for releasing the material gas, or may be an area source having a plurality of openings 75 for releasing the material gas, with the openings 75 being distributed in a planar manner.

[0091] In the above embodiment, the deposition unit 50 of the delivery unit 5 performs gas carrier deposition to adjust the deposition amount and deposition speed of the material gas by the carrier gas to deposit a film, but the present invention is not limited to this. The deposition unit 50 of the delivery unit 5 may deposit a film without using a carrier gas.

[0092] In the above embodiment, the hole-side connection layer 133 is formed by the vacuum deposition method in order for the film-forming section 50 of the delivery section 5 to form the hole-side connection layer 133 on the film-forming substrate 200, but the present invention is not limited to this. For example, when the layers to be formed on the film-forming substrate 200 are metal layers 150, 151, they can be formed by the sputtering method in addition to the vacuum deposition method. Also, when the layers to be formed on the film-forming substrate 200 are inorganic sealing layers 160, 161, they may be formed by the plasma CVD method.

[0093] In the above embodiment, one gas release section 72 is provided in the film forming section 50, but the present invention is not limited to this. A plurality of gas release sections 72a, 72b may be provided in the film forming section 50. For example, in the case of FIG. 5(a), the first thin film layer (second layer) is formed on the substrate 200 by the upstream gas release section 72a, and then the second thin film layer (third layer) is formed by the downstream gas release section 72b (second gas release section). In this way, a plurality of thin film layers can be formed in one film forming section 50. In this case, the gas release sections 72a, 72b may belong to the same film forming apparatus, or may belong to different film forming apparatuses.

[0094] In the above embodiment, the film forming unit 50 transports the film-forming substrate 200 by the transport conveyor 52 so that the film-forming surface of the film-forming substrate 200 is in a horizontal position with the film-forming surface spreading in the horizontal direction, but the present invention is not limited to this. For example, as shown in FIG. 5(b), the film forming unit 50 may transport the film-forming substrate 200 by the substrate transport unit 80 composed of a pair of transport rails 81a, 81b so that the film-forming surface of the film-forming substrate 200 is in a vertical position with the film-forming surface spreading in the vertical direction. In this case, the film-forming substrate 200 travels while being guided by the transport rails 81a, 81b, and the film forming device 53 becomes a side deposition type vapor deposition device in which the opening 75 of the gas release part 72 extends in the vertical direction and the opening 75 of the gas release part 72 faces in the horizontal direction.

[0095] In the embodiment described above, the film forming section 50 is an up-deposition type vapor deposition apparatus in which the opening 75 of the gas discharge section 72 faces vertically upward, but the present invention is not limited to this. The film forming section 50 may be a down-deposition type vapor deposition apparatus in which the opening 75 of the gas discharge section 72 faces vertically downward.

[0096] In the above embodiment, two cluster parts 2 and 3 are provided, but the present invention is not limited to this. Three or more cluster parts may be provided. For example, when the number of cluster parts is n, the number of transfer parts 5 is (n-1). However, it is not necessary to provide a film-forming part 50 to all transfer parts 5, and the film-forming part 50 may be provided only to some of the transfer parts 5.

[0097] In the embodiment described above, in the first cluster section 2, both the pretreatment by the pretreatment device 26 and the film formation by each of the deposition devices 21 to 23 are performed, but the present invention is not limited to this. In the first cluster section 2, only the pretreatment by the pretreatment device 26 may be performed. In this case, the film formation process of various layers on the conductive substrate 101 will be started from the film formation section 50 of the delivery section 5.

[0098] In the above embodiment, the first cluster section 2 includes a plurality of processing devices (vapor deposition devices 21 to 23, pre-processing device 26), but the present invention is not limited to this. The first cluster section 2 may include only one processing device. Similarly, the second cluster section 3 includes a plurality of processing devices (evaporation devices 31 to 33, CVD device 34), but the present invention is not limited to this. The second cluster section 3 may include only one processing device.

[0099] In the above-described embodiments, each component may be freely substituted or added between the respective embodiments as long as it falls within the technical scope of the present invention. [Explanation of symbols]

[0100] 1 Film production system 2. Cluster 1 3. Cluster 2 5 Delivery department 21 First deposition device (first processing device) 22 Second deposition device (first processing device) 23 Third deposition device (first processing device) 26 Pretreatment device (first treatment device) 27 First conveying device (first conveying section) 31 Fourth deposition device (second processing device) 32 Fifth deposition device (second processing device) 33 6th deposition device (2nd processing device) 34 CVD equipment (second processing equipment) 37 Second conveying device (second conveying section) 50 Film forming department 52 Conveyor (substrate transport section) 72 Gas release section 72a Upstream gas discharge section 72b downstream gas discharge section (second gas discharge section) 80 Substrate conveying section 100 Organic EL device 100a 1st organic EL device 100b 2nd organic EL device 102 Base material 103 1st electrode layer 105 Light-emitting functional layer 106 Second electrode layer 107 Sealing layer 110 Organic EL element 111 First light emitting unit 112 Connection Unit 113 Second Light Emitting Unit 120 First hole injection layer (first layer) 121 First hole transport layer (first layer) 122 First organic light-emitting layer (first layer) 123 First electron transport layer (first layer) 130 First electron side connection layer (first layer) 131 Second electron side connection layer (first layer) 132 Buffer layer (first layer) 133 Hole side connection layer (2nd layer) 140 Second hole injection layer 141 Second hole transport layer 142 Second organic light-emitting layer 143 Second electron transport layer 144 Second electron injection layer 200 Film base material

Claims

1. a first cluster unit having a plurality of first processing devices and a first transport unit for transporting a substrate to be film-formed between each of the first processing devices; a second cluster unit having a plurality of second processing devices and a second transport unit for transporting the substrate to be film-formed between the second processing devices; a transfer section for transferring a substrate on which at least a first layer has been formed by a first processing device of the first cluster section from the first cluster section to the second cluster section, The delivery section of the film forming system includes a film forming section that forms a film on the substrate to be film-formed.

2. The film forming section has a substrate transport section and a gas releasing section, The film forming system according to claim 1 , wherein the film forming section releases a film forming gas from the gas release section onto the substrate to be filmed while the substrate is transported by the substrate transport section, thereby forming a second layer on the substrate to be filmed.

3. The film forming section has a second gas ejection section, The film forming system according to claim 2, wherein the film forming section releases a film forming gas from the second gas release section onto the film forming substrate on which the second layer is laminated while transporting the film forming substrate by the substrate transport section, thereby forming a third layer on the film forming substrate.

4. A film forming system used for manufacturing an organic EL device having an organic EL element in which a first electrode layer, a light-emitting functional layer, and a second electrode layer are laminated on a substrate, and the organic EL element is sealed by the substrate and a sealing layer, comprising: The film forming system according to any one of claims 1 to 3, wherein the film forming unit forms a part or all of at least one layer selected from the group consisting of the light-emitting functional layer, the second electrode layer, and the sealing layer.

5. the light-emitting functional layer includes a first light-emitting unit, a connection unit, and a second light-emitting unit in this order, and the connection unit is capable of injecting electrons into the first light-emitting unit and injecting holes into the second light-emitting unit when a current is applied; The film forming system according to claim 4 , wherein the film forming section forms a film on a part or all of the connection unit.

6. The light-emitting functional layer has a plurality of organic layers, The film forming system according to claim 4 , wherein the film forming section forms an organic layer having a shortest film forming time among the plurality of organic layers.

7. A film forming system used for manufacturing a plurality of types of organic EL devices, The plurality of types of organic EL devices include a first organic EL device and a second organic EL device, a light-emitting functional layer of the first organic EL device has a common organic layer in common with a light-emitting functional layer of the second organic EL device; The film forming system according to claim 4 , wherein the film forming unit forms the common organic layer.

8. A first cluster unit having one or more first processing devices and a first transport unit for transporting a substrate to be film-formed; a second cluster unit having one or more second processing devices and a second transport unit for transporting the substrate to be film-formed; a transfer section for transferring a substrate to be film-formed that has been treated by a first treatment device of the first cluster section from the first cluster section to the second cluster section, The delivery section of the film forming system includes a film forming section that forms a film on the substrate to be film-formed.

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