Substrate processing device, rotation state detection method, manufacturing method of semiconductor device, and program

Abstract

To provide a substrate processing device which can attain desired processing quality when a plurality of substrates are processed while rotated, and to provide a rotation state detection method, a manufacturing method of a semiconductor device, and a program.SOLUTION: A substrate processing device 200 includes: a chamber 302 having a processing chamber which processes substrates 100; a plurality of gas supply parts which have nozzles 341, 342, 344, and 345 and may supply a gas to the processing chamber; a substrate support part 317 which is rotatably provided in the processing chamber and may support the plurality of substrates in a circular shape; and a detection part which detects a rotation state of the substrate support part.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a rotation state detection method, a manufacturing method for a semiconductor device, and a program. [Background technology]

[0002] One example of a substrate processing apparatus used in the manufacturing process of semiconductor devices is a substrate processing apparatus that is configured to perform a predetermined process (such as a film formation process) on each substrate by arranging multiple substrates in a circular pattern and supplying gas to each substrate while rotating the substrate (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-134224 A Summary of the Invention [Problem to be solved by the invention]

[0004] When multiple substrates are processed while being rotated, the processing quality of each substrate may vary depending on the rotation state. The present disclosure provides a technique that can obtain a desired processing quality for each substrate even when multiple substrates are processed while being rotated. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a processing chamber for processing a substrate; a gas supply unit capable of supplying gas to the processing chamber; a substrate support unit that is rotatably provided in the processing chamber and that is capable of supporting a plurality of the substrates in a circumferential direction; A detection unit that detects a rotation state of the substrate support unit; The present invention provides a technique having the following features: Effect of the Invention

[0006] According to the present disclosure, even when multiple substrates are processed while being rotated, desired processing quality can be obtained for each substrate. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present disclosure, viewed from above; [Diagram 2] 2 is a schematic vertical cross-sectional view of the substrate processing apparatus according to the embodiment of the present disclosure, taken along line α-α' in FIG. [Diagram 3] FIG. 13 is a schematic diagram showing a first specific example of a detection unit in a substrate processing apparatus according to an embodiment of the present disclosure, showing a substrate support unit in a normal state. [Figure 4] 1 is a schematic diagram showing a first specific example of a detection unit in a substrate processing apparatus according to an embodiment of the present disclosure, illustrating a state in which an abnormality has occurred in a substrate support unit. FIG. [Diagram 5] FIG. 13 is a schematic diagram showing a second specific example of a detection unit in a substrate processing apparatus according to an embodiment of the present disclosure, showing a normal state of a substrate support unit. [Figure 6] FIG. 13 is a schematic diagram showing a second specific example of a detection unit in a substrate processing apparatus according to an embodiment of the present disclosure, illustrating a state in which an abnormality has occurred in a substrate support unit. [Figure 7] FIG. 13 is a schematic diagram showing a third specific example of a detection unit in a substrate processing apparatus according to an embodiment of the present disclosure, showing a normal state of a substrate support unit. [Figure 8] FIG. 13 is a schematic diagram showing a third specific example of a detection unit in a substrate processing apparatus according to an embodiment of the present disclosure, illustrating a state in which an abnormality has occurred in a substrate support unit. [Figure 9] 1 is an explanatory diagram illustrating a configuration example of a gas supply unit in a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 10] 2 is a block diagram showing an example of a functional configuration of a controller in the substrate processing apparatus according to an embodiment of the present disclosure. FIG. [Figure 11]FIG. 1 is a flow diagram illustrating an example of a procedure of a substrate processing process performed by a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 12] 11 is an explanatory diagram showing a specific example of the timing of performing rotation state monitoring during operation of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings.

[0009] (1) Configuration of the substrate processing device The configuration of a substrate processing apparatus according to an embodiment of the present disclosure will be described mainly with reference to Figures 1 and 2. Note that all of the drawings used in the following description are schematic, and the dimensional relationships of the elements on the drawings, the ratios of the elements, etc. do not necessarily match the actual ones. Furthermore, the dimensional relationships of the elements, the ratios of the elements, etc. do not necessarily match between multiple drawings.

[0010] Fig. 1 is a schematic cross-sectional view of the substrate processing apparatus 200 according to this embodiment as viewed from above. Fig. 2 is a schematic vertical cross-sectional view of the substrate processing apparatus 200 according to this embodiment, taken along the line α-α' in Fig. 1. The line α-α' is a line that runs from α through the center of the chamber 302 toward α'.

[0011] A specific configuration of the substrate processing apparatus 200 will be described below. The substrate processing apparatus 200 is controlled by a controller 400, which will be described later.

[0012] (Chamber) 1 and 2, the substrate processing apparatus 200 is mainly composed of a chamber 302 which is a cylindrical airtight container (processing container). A processing chamber 301 for processing a substrate 100 is configured inside the chamber 302. A gate valve 305 is connected to the chamber 302, and the substrate 100 is loaded and unloaded through the gate valve 305 by a wafer transfer machine 500. The gate valve 305 is adjacent to a passage 305a. The substrate 100 is moved through the passage 305a.

[0013] In the processing chamber 301, a processing region 306, which is a domain (region) for supplying a processing gas, and a purge region 307, which is a domain (region) for supplying a purge gas, are set. Here, the processing region 306 and the purge region 307 are alternately arranged in a circumferential shape. For example, they are arranged in the order of a first processing region 306a as a first domain, a first purge region 307a as a purge domain, a second processing region 306b as a second domain, and a second purge region 307b as a purge domain. As described later, a first gas is supplied into the first processing region 306a, a second gas is supplied into the second processing region 306b, and an inert gas is supplied into the first purge region 307a and the second purge region 307b. As a result, a predetermined process is performed on the substrate 100 according to the gas supplied into each region.

[0014] The purge region 307 is a region that spatially separates the first processing region 306a and the second processing region 306b. The ceiling 308 of the purge region 307 is configured to be lower than the ceiling 309 of the processing region 306. The first purge region 307a is provided with a ceiling 308a, and the second purge region 307b is provided with a ceiling 308b. By lowering each ceiling, the pressure in the space of the purge region 307 is increased. By supplying a purge gas to this space, the adjacent processing regions 306 are partitioned. The purge gas also plays a role in removing excess gas on the substrate 100.

[0015] A substrate support 317 that supports the substrate 100 is provided inside the chamber 302. The substrate support 317 has a thermally permeable property, and transmits heat radiated from a heater 380 (described later). The transmitted heat heats the substrate 100.

[0016] The substrate support part 317 is provided rotatably within the chamber 302. Furthermore, the substrate support part 317 is configured to be able to arrange a plurality of (e.g., five) substrates 100 on the same plane and on the same circumference along the direction of rotation within the processing chamber 301.

[0017] For this purpose, the substrate support unit 317 has a substrate mounting plate 318 as a plate-shaped rotating unit that supports the substrates 100, and is thus capable of supporting a plurality of substrates 100 in a circumferential manner. The substrate mounting plate 318 is supported by a support shaft (described later) that is disposed near the center of the chamber 302, and is configured to be rotatable about the support shaft as a rotation axis. In other words, the substrate support unit 317 is configured to have at least the substrate mounting plate 318 and a shaft 322 (described later) that serves as a support shaft that supports the substrate mounting plate 318.

[0018] The surface of the substrate mounting plate 318 is composed of a substrate mounting surface 311 on which the substrate 100 is placed, and a non-substrate mounting surface 325. The substrate mounting surfaces 311 are arranged at equal intervals (for example, 72° intervals) from each other in concentric positions from the center of the substrate mounting plate 318. For convenience of explanation, they are not shown in FIG.

[0019] The substrate mounting surface 311 is provided on the bottom surface of the recess 312. Each recess 312 is, for example, circular when viewed from the top surface of the substrate mounting plate 318, and concave when viewed from the side. The diameter of the recess 312 is preferably configured to be slightly larger than the diameter of the substrate 100. By placing the substrate 100 in the recess 312, the substrate 100 can be placed on the substrate mounting surface 311.

[0020] The substrate mounting plate 318 is fixed to a core portion 321. The core portion 321 is provided at the center of the substrate mounting plate 318, and serves to fix the substrate mounting plate 318 to a shaft 322, which will be described later. Below the core portion 321, a shaft 322 is disposed as a support shaft for supporting the substrate mounting plate 318. The shaft 322 supports the core portion 321.

[0021] The lower part of shaft 322 passes through hole 323 provided in the bottom part of chamber 302, and is covered with airtight bellows 304 outside chamber 302. In addition, at the lower end of shaft 322, lifting and rotating part 319 is provided.

[0022] Lifting and rotating unit 319 mainly includes support shaft 319a that supports shaft 322, and operating unit 319b that lifts and rotates support shaft 319a. Operating unit 319b includes lifting mechanism 319c including, for example, a motor for achieving lifting and lowering, and rotating mechanism 319d such as gears for rotating support shaft 319a.

[0023] The lifting and rotating unit 319 may be provided with an instruction unit 319e for instructing the operation unit 319b to lift and rotate, as a part of the lifting and rotating unit 319. The instruction unit 319e is electrically connected to the controller 400. The instruction unit 319e controls the operation unit 319b based on an instruction from the controller 400.

[0024] By operating the lifting and rotating unit 319 to rotate the shaft 322 and the substrate mounting plate 318, the substrate support unit 317 can rotate the substrate 100 placed on the substrate mounting surface 311 in the circumferential direction. Also, by operating the lifting and rotating unit 319 to lift and lower the shaft 322 and the substrate mounting plate 318, the substrate support unit 317 can lift and lower the substrate 100 placed on the substrate mounting surface 311.

[0025] Lift / lower rotation unit 319 may be provided with a tachometer 319f for detecting values ​​related to rotation of support shaft 319a or shaft 322 supported thereby, as a part of lift / lower rotation unit 319. Tachometer 319f is configured to be capable of detecting values ​​related to rotation, such as the number of rotations or the value of the rotation speed when support shaft 319a rotates, and fluctuations in these values ​​over time.

[0026] An attitude control unit 350 that controls the attitude of the substrate support unit 317 (i.e., a portion including at least the substrate mounting plate 318 and the shaft 322) is provided between the shaft 322 and the lifting and rotating unit 319. The attitude control unit 350 has a base member 351 that supports the shaft 322 and the lifting and rotating unit 319, and a plurality of actuators 352 that connect the base member 351 to the bottom surface of the chamber 302.

[0027] A plurality of actuators 352 (for example, four or six) are evenly arranged so as to surround the shaft 322. Each actuator 352 is individually extendable and retractable, and is configured to control the inclination of the base member 351 relative to the chamber 302 by changing the distance between the base member 351 and the chamber 302 through the extension and contraction of each actuator, thereby making it possible to adjust the attitude of the substrate support part 317 (particularly, the inclination of the rotation axis of the shaft 322). Note that, for example, an electric motor, an electromagnetic solenoid, an air cylinder, or the like can be used as the actuator 352.

[0028] The attitude control unit 350 may be provided with a tilt adjustment unit 353 as part of the attitude control unit 350 for instructing each actuator 352 to perform an extension or contraction operation. The tilt adjustment unit 353 is electrically connected to the controller 400. The tilt adjustment unit 353 controls the extension or contraction operation of each actuator 352 based on an instruction from the controller 400.

[0029] In the chamber 302, a heater unit 381 including a heater 380 as a heating section (heater section) is disposed below the substrate mounting plate 318. The heater 380 is provided so as to face the lower surface of the substrate mounting plate 318, and heats each substrate 100 mounted on the substrate mounting plate 318. The heater 380 is disposed in a circumferential shape along the shape of the chamber 302. The heater 380 may be divided into a plurality of zones along the circumferential direction. A heater temperature control section 387 is connected to the heater 380. The heater temperature control section 387 is electrically connected to a controller 400 described later, and controls the power supply to the heater 380 according to an instruction from the controller 400 to perform temperature control. When the heater 380 is divided into a plurality of zones, the heater temperature control section 387 is configured to be able to perform temperature control for each of the plurality of zones.

[0030] An exhaust buffer structure 386 is disposed on the outer periphery of the substrate mounting plate 318. The exhaust buffer structure 386 has an exhaust groove 388 and an exhaust buffer space 389. The exhaust groove 388 and the exhaust buffer space 389 are formed in a circumferential shape along the shape of the chamber 302.

[0031] An exhaust hole 392 is provided at the bottom of the exhaust buffer structure 386. The exhaust hole 392 exhausts gases supplied into the processing vessel 304. Each gas is exhausted from the exhaust hole 392 via the exhaust groove 388 and the exhaust buffer space 389.

[0032] (Detection unit) Next, the detection unit that detects the rotation state of the substrate support unit 317 will be described mainly with reference to FIGS. 2, 3, 4, 5, 6, 7, and 8. FIG.

[0033] Figures 3 and 4 are schematic diagrams showing a first specific example of a detection unit in the substrate processing apparatus 200 according to this embodiment. Figures 5 and 6 are schematic diagrams showing a second specific example of a detection unit in the substrate processing apparatus 200 according to this embodiment. Figures 7 and 8 are schematic diagrams showing a first specific example of a detection unit in the substrate processing apparatus 200 according to this embodiment.

[0034] The substrate processing apparatus 200 according to this embodiment has a detection unit that detects the rotation state of the substrate support unit 317 in the chamber 302. The rotation state of the substrate support unit 317 refers to the state of the substrate mounting plate 318 and the shaft 322 when the substrate mounting plate 318 rotates around the shaft 322 as the rotation axis. More specifically, the rotation state of the substrate support unit 317 refers in particular to the presence or absence of an abnormality in the state of the rotating substrate mounting plate 318. Examples of abnormalities include tilting of the rotation axis when the substrate mounting plate 318 rotates, bending of the substrate mounting plate 318, and rotation fluctuation of the substrate mounting plate 318.

[0035] As the detection unit, the chamber 302 has a sensor 361 that detects the position of an edge portion 318a, which is the outer peripheral edge of the substrate mounting plate 318, as shown in, for example, FIGS. 3 and 4. The sensor 361 is, for example, a transmission type photoelectric sensor in which a light emitting portion and a light receiving portion are arranged so that sensing light passes along the side of the edge portion 318a. However, as long as it is possible to detect the position of the edge portion 318a, a reflection type photoelectric sensor may be used instead of the transmission type. Also, as long as it is possible to detect the position of the edge portion 318a, a sensor of another detection type (for example, a proximity sensor) may be used instead of the photoelectric sensor.

[0036] The sensor 361 can detect the presence or absence of the edge portion 318a by the sensing light passing through the side of the edge portion 318a of the substrate mounting plate 318. Therefore, for example, as shown in Fig. 4, if the rotation axis of the substrate mounting plate 318 is tilted when the substrate mounting plate 318 rotates, the edge portion 318a blocks the sensing light, and the occurrence of the tilt of the rotation axis is detected by the sensor 361.

[0037] It is preferable that a plurality of sensors 361 are arranged along the outer periphery of the substrate mounting plate 318. This is because a plurality of sensors can detect tilt of the rotation axis in any direction. As long as the directional dependency of tilt detection can be eliminated, the number of sensors to be arranged is not particularly limited.

[0038] As a detection unit, the chamber 302 has a sensor 362 arranged so that sensing light passes along the plate surface of the substrate mounting plate 318 (particularly, the lower surface 318b located on the side opposite to the substrate mounting surface 311) as shown in, for example, FIGS. 5 and 6. The sensor 362 is, for example, a transmission type photoelectric sensor in which a light emitting unit and a light receiving unit are arranged so that sensing light passes along the lower surface 318b of the substrate mounting plate 318 in the vicinity of the lower surface 318b. However, as long as the position of the lower surface 318b of the substrate mounting plate 318 can be detected, a reflection type photoelectric sensor may be used instead of the transmission type. As long as the position of the plate surface of the substrate mounting plate 318 can be detected, a sensor of another detection type (for example, a proximity sensor) may be used instead of the photoelectric sensor.

[0039] The sensor 362 can detect the presence or absence of a plate surface by passing a sensing light near the plate surface of the substrate mounting plate 318. Therefore, for example, as shown in Fig. 6, if the rotation axis tilts when the substrate mounting plate 318 rotates, the lower surface 318b of the substrate mounting plate 318 blocks the sensing light, and the occurrence of the tilt of the rotation axis is detected by the sensor 362. Furthermore, not only if the substrate mounting plate 318 is tilted, but also if the substrate mounting plate 318 is bent (sagging in the direction of gravity), for example, the lower surface 318b of the substrate mounting plate 318 blocks the sensing light, and the occurrence of the bending is detected by the sensor 362.

[0040] 7 and 8, the chamber 302 has a sensor 363 for detecting the distance of the gap 318c between the substrate mounting plate 318 and the heater 381. The sensor 363 is, for example, a laser length measurement sensor disposed near the heater 381 and detecting the distance from the position of the heater 381 to the bottom surface of the substrate mounting plate 318. However, instead of the laser length measurement sensor, a length measurement sensor of another detection type (for example, a proximity sensor) may be used as long as the size of the gap 318c can be quantitatively detected.

[0041] The sensor 363 detects the distance between the substrate mounting plate 318 and the heater 381, thereby making it possible to detect whether the size of the gap 318c is constant (i.e., whether a predetermined size is maintained) or not. Therefore, for example, as shown in Fig. 8, if the rotation axis of the substrate mounting plate 318 is tilted when the substrate mounting plate 318 rotates, the sensor 363 detects the tilt of the rotation axis due to the variation in the distance between the substrate mounting plate 318 and the heater 381. Furthermore, not only if the substrate mounting plate 318 is tilted, but also if the substrate mounting plate 318 is bent (drooping in the direction of gravity), the sensor 363 detects the bending due to the variation in the distance between the substrate mounting plate 318 and the heater 381.

[0042] As described above, the detection unit is configured to detect at least one of the tilt and bending of the substrate mounting plate 318. As long as it is possible to detect at least one of the tilt and bending, the detection unit may have any one of the above-mentioned sensors 361, 362, and 363, or may have an appropriate combination of two or more of the sensors 361, 362, and 363. By appropriately combining the sensors 361, 362, and 363, it becomes possible to reliably detect both the tilt and bending of the substrate mounting plate 318.

[0043] Detection of the inclination, bending, etc. of the substrate mounting plate 318 is not necessarily limited to the above-mentioned sensors 361, 362, 363, but may be as follows. For example, the detection unit may have a sensor that detects the distance between the substrate mounting plate 318 and at least one of the nozzles 341, 342, 344, 345 of the gas supply unit described below. Such a sensor may be configured similarly to the above-mentioned sensor 363. Even with such a configuration, the detection unit can detect the inclination, bending, etc. of the substrate mounting plate 318.

[0044] The detection unit is not necessarily limited to a unit that detects the inclination, bending, etc. of the substrate mounting plate 318, so long as it detects the rotational state of the substrate support unit 317. For example, the detection unit may detect rotational fluctuation when the substrate mounting plate 318 rotates, as the rotational state of the substrate support unit 317. The detection of the rotational fluctuation may be performed in addition to or instead of the detection of the inclination, bending, etc. of the substrate mounting plate 318.

[0045] The detection unit for detecting the rotational fluctuation is configured to, for example, utilize a rotation meter 319f of the lifting rotation unit 319 shown in FIG. 2 to monitor the number of rotations or the rotation speed when the substrate mounting plate 318 rotates, and detect the occurrence of the rotational fluctuation when the change in the number of rotations or the rotation speed exceeds a preset allowable value.

[0046] As another example of a detection unit for detecting rotational fluctuations, for example, in the case where operating unit 319b of lifting and rotating unit 319 shown in FIG. 2 has an electric motor that serves as a drive source for rotating shaft 322 and support shaft 319a, the detection unit is configured to monitor the amount of power supplied to the electric motor, and detect the occurrence of rotational fluctuations when a change in power exceeds a preset allowable value.

[0047] The detection unit may perform the following detection as the rotation state of the substrate support unit 317. For example, the detection unit may have a vibration sensor that detects the vibration of the shaft 322 and the support shaft 319a when the substrate mounting plate 318 rotates. In this case, by comparing the magnitude of the vibration value detected by the vibration sensor with a preset threshold value, it becomes possible to detect signs of failure of the bearings (fluid seals, etc.) of the shaft 322 or the support shaft 319a, eccentricity of the rotation shaft, etc., and thus the rotation state of the substrate support unit 317 can be indirectly detected.

[0048] (Gas supply section) Next, a gas supply unit that supplies gas to the chamber 302 will be described mainly with reference to FIGS. FIG. 9 is an explanatory diagram showing an example of the configuration of a gas supply unit in the substrate processing apparatus 200 according to this embodiment.

[0049] Nozzle 341, nozzle 342, nozzle 344, and nozzle 345 are provided in chamber 302. "A" in FIG. 1 is connected to "A" in FIG. 9(a). That is, nozzle 341 is connected to supply pipe 241. "B" in FIG. 1 is connected to "B" in FIG. 9(b). That is, nozzle 342 is connected to supply pipe 251. "C" in FIG. 1 is connected to "C" in FIG. 9(c). That is, nozzle 344 and nozzle 345 are each connected to supply pipe 261.

[0050] 9(a) shows a configuration example of a first gas supply unit 240 which is a part of the gas supply unit. A first gas supply source 242, an MFC 243 which is a flow rate controller (flow rate control unit), and a valve 244 which is an on-off valve are provided in a first gas supply pipe 241 in the first gas supply unit 240 in this order from the upstream direction.

[0051] A gas containing a first element (hereinafter referred to as a "first gas") is mainly supplied from first gas supply pipe 241 in first gas supply unit 240. That is, the first gas is supplied to nozzle 341 via MFC 243, valve 244, and first gas supply pipe 241. Then, the first gas is supplied to first processing region 306a through nozzle 341.

[0052] The first gas is one of the process gases, and is a source gas containing a first element. Here, the first element is, for example, silicon (Si). That is, the first gas is Si gas (also called Si-containing gas), and is a gas containing Si as a main component. Specifically, dichlorosilane (DCS, SiH2Cl2) gas is used.

[0053] A first gas supply unit 240 is mainly configured by the first gas supply pipe 241, the MFC 243, the valve 244, and the nozzle 341. The first gas supply unit 240 may include a first gas supply source 242.

[0054] 9(b) shows a configuration example of a second gas supply unit 250 which is a part of the gas supply unit. A second gas supply source 252, an MFC 253 which is a flow rate controller (flow rate control unit), and a valve 254 are provided in a second gas supply pipe 251 in the second gas supply unit 250 in this order from the upstream direction.

[0055] A reactive gas (hereinafter referred to as "second gas") that reacts with the first gas is mainly supplied from second gas supply pipe 251 in second gas supply unit 250. That is, the second gas is supplied to nozzle 342 via MFC 253, valve 254, and second gas supply pipe 251. Then, the second gas is supplied to second processing region 306b through nozzle 342.

[0056] The second gas is one of the process gases, and is, for example, a nitrogen-containing gas containing nitrogen as a main component. As the nitrogen-containing gas, for example, ammonia (NH3) gas is used.

[0057] A second gas supply unit 250 is mainly configured by the second gas supply pipe 251, the MFC 253, the valve 254, and the nozzle 342. A second gas supply source 252 may be included in the second gas supply unit 250. Note that the second gas supply unit 250 is configured to supply a reactive gas, and therefore may be referred to as a reactive gas supply unit.

[0058] 9(c) shows a configuration example of a purge gas (inert gas) supply unit 260 which is a part of the gas supply unit. A purge gas supply source 262, an MFC 263 which is a flow rate controller (flow rate control unit), and a valve 264 are provided in this order from the upstream direction in a purge gas supply pipe 261 in the purge gas supply unit 260.

[0059] A purge gas (inert gas) is supplied from a purge gas supply pipe 261 in the purge gas supply unit 260. That is, the purge gas is supplied to each of the nozzles 344 and 345 via the MFC 263, the valve 264, and the purge gas supply pipe 261. Then, the purge gas is supplied to the first purge region 307a through the nozzle 344, and is also supplied to the second purge region 307b through the nozzle 345.

[0060] The purge gas is a gas that does not react with the first gas, the second gas, etc., and is one of the purge gases that purge the atmosphere in the processing chamber 301, such as nitrogen (N2) gas.

[0061] A purge gas supply unit 260 is mainly configured by the purge gas supply pipe 261, the MFC 263, the valve 264, the nozzle 344, and the nozzle 345. The purge gas supply unit 260 may also include a purge gas supply source 262.

[0062] The first gas supply unit 240 and the second gas supply unit 250 are collectively referred to as a process gas supply unit. The process gas supply unit may include a purge gas supply unit 260.

[0063] (Gas exhaust section) Next, a gas exhaust unit that exhausts gas from the chamber 302 will be described mainly with reference to FIGS.

[0064] An exhaust hole 392 is provided below the chamber 302. An exhaust hole 392 is provided for each processing region 306. An exhaust hole 392a is provided corresponding to the first processing region 306a, and an exhaust hole 392b is provided corresponding to the second processing region 306b.

[0065] An exhaust pipe 334a, which is a part of the exhaust unit 334, is provided so as to communicate with the exhaust hole 392a. A vacuum pump 334b ​​serving as a vacuum exhaust device is connected to the exhaust pipe 334a via a valve 334d serving as an opening / closing valve and an APC (Auto Pressure Controller) valve 334c serving as a pressure regulator (pressure adjustment unit), so that the processing chamber 301 can be evacuated to a predetermined pressure (degree of vacuum).

[0066] Similarly, the exhaust hole 392b is connected to the exhaust unit 335 so as to communicate with the exhaust port 392a. The exhaust pipe 335a, the valve 335d, and the APC valve 335c are collectively referred to as the exhaust unit 335. The vacuum pump 335b may be included in the second exhaust unit 335.

[0067] (Control unit) The substrate processing apparatus 200 configured as above is controlled by a controller 400 serving as a control unit (control means). The controller 400 will be described below mainly with reference to FIG. FIG. 10 is a block diagram showing an example of the functional configuration of a controller 400 in the substrate processing apparatus 200 according to this embodiment.

[0068] The substrate processing apparatus 200 has a controller 400 that controls the operation of each unit, such as a microwave supply unit, an elevation rotation unit, a valve, and an MFC. The controller 400 has at least a calculation unit (CPU) 401, a temporary storage unit (RAM, Random Access Memory) 402, a storage unit 403, and a transmission / reception unit 404. The controller 400 is connected to each component of the substrate processing apparatus 200 via the transmission / reception unit 404, and calls up a program or recipe from the storage unit 403 in response to an instruction from a higher-level controller or a user, and controls the operation of each component in response to the contents of the program or recipe. The controller 400 may be configured as a dedicated computer or a general-purpose computer. For example, the controller 400 according to this embodiment can be configured by preparing an external storage device 412 (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB flash drive or a memory card) that stores the above-mentioned program, and installing the program in a general-purpose computer using the external storage device 412. Furthermore, the means for supplying the program to the computer is not limited to supplying the program via the external storage device 412. For example, a communication means such as the Internet or a dedicated line may be used, or information may be received from the higher-level device 420 via the transmission / reception unit 411 and the program may be supplied without going through the external storage device 412. Furthermore, instructions may be given to the controller 400 using an input / output device 413 such as a keyboard or a touch panel.

[0069] The storage unit 402 and the external storage device 412 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term recording media is used in this specification, it may include only the storage unit 402 alone, only the external storage device 412 alone, or both.

[0070] (2) Substrate processing Next, a procedure for performing a substrate processing step as one step of a manufacturing process of a semiconductor device using the substrate processing apparatus 200 having the above-mentioned configuration will be described. Here, an example will be given of a case in which a silicon nitride (SiN) film is formed as a thin film on a substrate 100 using a Si-containing gas as a first gas and NH3 gas as a second gas in the substrate processing step.

[0071] The substrate processing steps will be described below mainly with reference to FIG. FIG. 11 is a flow chart showing an example of the procedure of a substrate processing step performed by the substrate processing apparatus 200 according to this embodiment. In the following description, the operation of each component of the substrate processing apparatus 200 is controlled by a controller 400 .

[0072] (Substrate loading and placement process) In the substrate processing process, first, a substrate loading / placing step is performed, which is not shown in FIG.

[0073] In the substrate loading / placing step, the substrate mounting plate 318 is rotated to move the recess 312 to a position adjacent to the gate valve 305. Then, the substrate 100 is placed on the substrate mounting surface 311 from this transfer chamber using the wafer transfer machine 500.

[0074] Once the substrate 100 is placed on the substrate mounting surface 311, the substrate mounting plate 318 is rotated so that the substrate mounting surface 311 on which the substrate 100 is not placed faces the gate valve 305. Thereafter, substrates are similarly placed on the substrate mounting surfaces 311. This process is repeated until the substrates 100 have been placed on all of the substrate mounting surfaces 311.

[0075] When the substrate 100 is placed on the substrate mounting plate 318, power is supplied to the heater 380 in advance and controlled so that the front surface of the substrate 100 becomes a predetermined temperature. The temperature of the substrate 100 is, for example, 400° C. or higher and 500° C. or lower. Heat radiated from the heater 380 is irradiated to the rear surface of the substrate 100 via the substrate mounting plate 318. The heater 380 is kept in a constantly energized state at least from the substrate loading / mounting step until the end of the substrate unloading step described below.

[0076] (Substrate mounting plate rotation start process) Once the substrates 100 are placed in the recesses 312, a substrate mounting plate rotation start step (S110) is then performed. In the substrate mounting plate rotation start step (S110), the lifting and rotating unit 319 rotates the substrate mounting plate 318 in the R direction. By rotating the substrate mounting plate 318, the substrate 100 moves in this order through the first processing region 306a, the first purge region 307a, the second processing region 306b, and the second purge region 307b.

[0077] (Gas supply start process) After the substrate 100 is heated to a desired temperature in the substrate loading / placing step and the substrate mounting plate 318 reaches a desired rotation speed in the substrate mounting plate rotation start step (S110), a gas supply start step (S120) is performed. In the gas supply start step (S120), the valve 244 is opened to start supplying a Si-containing gas into the first processing region 306a. In parallel with this, the valve 254 is opened to supply NH3 gas into the second processing region 306b.

[0078] At this time, the MFC 243 is adjusted so that the flow rate of the Si-containing gas is a predetermined flow rate. The supply flow rate of the Si-containing gas is, for example, 50 sccm or more and 500 sccm or less.

[0079] Moreover, the MFC 253 is adjusted so that the flow rate of the NH3 gas is a predetermined flow rate. The supply flow rate of the NH3 gas is, for example, 100 sccm or more and 5000 sccm or less.

[0080] After the substrate loading / mounting process, the exhaust units 334 and 335 continue to evacuate the processing chamber 301, and N2 gas is supplied as a purge gas from the inert gas supply unit 260 into the first purge region 307a and the second purge region 307b.

[0081] (Film forming process) Next, a film forming step (S130) is performed. In the film forming step (S130), a Si-containing layer is formed on each substrate 100 in the first processing region 306a, and the Si-containing layer reacts with NH3 gas in the second processing region 306b after rotation to form a Si-containing film on the substrate 100. Then, the substrate mounting plate 318 is rotated a predetermined number of times so that the Si-containing film on the substrate 100 has a desired thickness.

[0082] (Gas supply shutdown process) After the substrate mounting plate 318 is rotated a predetermined number of times in the film forming step (S130), a gas supply stopping step (S140) is performed. In the gas supply stopping step (S140), the valves 244 and 254 are closed to stop the supply of the Si-containing gas to the first processing region 306a and the supply of the NH3 gas to the second processing region 306b.

[0083] (Substrate mounting plate rotation stopping process) After the gas supply stopping step (S140), a substrate mounting plate rotation stopping step (S150) is performed. In the substrate mounting plate rotation stopping step (S150), the rotation of the substrate mounting plate 318 is stopped.

[0084] (Substrate unloading process) After the substrate mounting plate rotation stopping step (S150), a substrate unloading step is performed, which is not shown in FIG.

[0085] In the substrate unloading process, the substrate placement plate 318 is rotated so that the substrate 100 to be unloaded is moved to a position adjacent to the gate valve 305. The substrate 100 is then unloaded in the reverse order to that of the substrate loading. These operations are repeated until all the substrates 100 are unloaded.

[0086] (3) Rotation control processing As described above, in the substrate processing step, the substrate mounting plate 318 is rotated to process each substrate 100 on the substrate mounting plate 318. Therefore, depending on the rotation state of the substrate mounting plate 318, there is a risk of influence such as occurrence of variation in the processing quality of each substrate 100.

[0087] For example, when the rotation axis of the substrate mounting plate 318 is tilted, the substrate mounting surface 311 on the substrate mounting plate 318 is also tilted accordingly. When the substrate mounting plate 318 rotates in this state, the influence of the tilt causes variations in the distance between the substrate 100 on the substrate mounting surface 311 and the heater 380, and in the distance between the substrate 100 and the nozzles 341, 342, 344, and 345 that supply gas. This causes the substrate processing state to differ between the substrates 100 mounted on the substrate mounting plate 318 or between lots of substrates 100 to be processed, which may result in variations in the processing quality of each substrate 100.

[0088] Furthermore, the substrate mounting plate 318 may bend due to accumulation of heat from the heater 380. As with the tilt described above, when the substrate mounting plate 318 is bent, the substrate processing state varies between the substrates 100 or between lots, which may result in variation in the processing quality of the substrates 100.

[0089] Furthermore, if rotational fluctuations (such as fluctuations in rotation speed) occur when the substrate mounting plate 318 rotates, the time it takes for the substrate 100 to pass through each of the regions 306a, 307a, 306b, and 307b will vary. This will then cause variations in the amount of gas exposure to the substrate 100, for example, a particular gas will be exposed to a large amount and another gas will be exposed to a small amount, and the substrate processing state will differ between each substrate 100 or between lots, which may result in variations in the processing quality of each substrate 100.

[0090] In other words, if there is an abnormality in the rotational state of the substrate mounting plate 318 during the substrate processing process, this may have an effect such as causing variations in the processing quality of the substrate 100, and as a result, it may not be possible to obtain a substrate 100 with the desired processing quality.

[0091] Therefore, the substrate processing apparatus 200 according to this embodiment performs a rotation control process using a detection unit under the control of the controller 400, as described below, prior to the substrate processing step. The rotation control process is a process in which the detection unit monitors the rotation state of the substrate support unit 317 and controls the rotation state of the substrate support unit 317 based on the monitoring result. After the rotation control process is performed, the substrate processing step including the supply of gas into the processing chamber 301 is performed.

[0092] (monitoring) In the rotation control process, first, the rotation state of the substrate support part 317 is monitored. The monitoring is performed using a detection unit. Specifically, the monitoring as a rotation state detection method includes a step of rotating the substrate placement plate 318 of the substrate support part 317 and a step of detecting the rotation state of the rotation support part 317 using the detection unit.

[0093] For example, in the case where the sensor 361 is provided as the detection unit, when tilting of the rotation axis of the substrate mounting plate 318 occurs, this is detected by the sensor 361 as shown in Fig. 4. Therefore, the presence or absence of an abnormality in the rotation state of the substrate mounting plate 318 (particularly tilting of the rotation axis) can be detected by monitoring the detection result by the sensor 361. In particular, if multiple sensors 361 are provided, the presence or absence of an abnormality in the rotation state can be detected with high accuracy.

[0094] 6, if the sensor 362 is provided as the detection unit, when the rotation axis of the substrate mounting plate 318 tilts, the sensor 362 detects this. The same applies when the substrate mounting plate 318 bends (sagging in the direction of gravity). Therefore, by monitoring the detection result by the sensor 362, the presence or absence of an abnormality in the rotation state of the substrate mounting plate 318 (particularly, tilt or bending of the rotation axis) can be detected.

[0095] 8, when the rotation axis of the substrate mounting plate 318 is tilted or the substrate mounting plate 318 is bent (drooping in the direction of gravity), the distance 318c between the substrate mounting plate 318 and the heater 381 becomes non-constant, and this is detected by the sensor 363. Therefore, by monitoring the detection result by the sensor 363, the presence or absence of an abnormality in the rotation state of the substrate mounting plate 318 (particularly, a change in the distance from the heater 381 due to tilt or bending of the rotation axis) is detected. The same applies to the case where the distance between the substrate mounting plate 318 and the nozzles 341, 342, 344, 345 is detected, for example.

[0096] Also, for example, in the case where the rotation count or rotation speed of the substrate mounting plate 318 is monitored using a revolution meter 319f as the detection unit, or in the case where the magnitude of the power supplied to the electric motor of the actuation unit 319b is monitored, any occurrence of rotation fluctuation in the substrate mounting plate 318 is detected. Therefore, the presence or absence of an abnormality in the rotation state of the substrate mounting plate 318 (for example, rotation fluctuation in the substrate mounting plate 318 due to a motor trouble) can be detected by monitoring using the detection unit.

[0097] In addition, for example, if a vibration sensor is provided as the detection unit, the occurrence of a failure in the bearings (fluid seal, etc.) of the shaft 322 or the support shaft 319a, eccentricity of the rotation shaft, etc. is detected by the vibration sensor. Therefore, by monitoring the detection results by the vibration sensor, the presence or absence of an abnormality in the rotation state of the substrate mounting plate 318 (particularly, bearing failure, eccentricity of the rotation shaft, etc.) can be detected.

[0098] The rotation state of the substrate support 317 may be monitored in at least one of the above-mentioned aspects, preferably in a combination of a plurality of aspects.

[0099] (Implementation timing) The rotation state of the substrate support 317 may be monitored at the timing described below.

[0100] As an example of the timing for performing monitoring, the detection unit detects the rotational state of the substrate support part 317 before starting up the apparatus. Before starting up the apparatus refers to any time point before starting a substrate processing process in the substrate processing apparatus 200. Specifically, before starting operation of the substrate processing apparatus 200, for example, when performing a test run of the substrate processing apparatus 200, the rotational state of the substrate support part 317 is detected. If the rotational state is detected at such a timing, even if a difference in the rotational state occurs due to a machine difference of the substrate processing apparatus 200, it is possible to accurately grasp the difference due to the machine difference.

[0101] The monitoring may be performed while the substrate processing apparatus 200 is in operation. FIG. 12 is an explanatory diagram showing a specific example of the timing of performing rotation state monitoring during operation of the substrate processing apparatus 200 according to this embodiment.

[0102] For example, consider a case where the rotation state of the substrate support part 317 is monitored from the upper side of the substrate support part 317, such as by detecting the distance between the substrate support part 317 and the nozzles 341, 342, 344, and 345. In this case, the rotation state of the substrate support part 317 may be monitored at least at any one of the following points: before the substrate mounting plate 318 supports the substrate 100 in the substrate carrying-in / mounting step; when the substrate mounting plate 318 supports the substrate 100 in the substrate carrying-in / mounting step; when the substrate mounting plate 318 starts to rotate in the substrate mounting plate rotation start step (S110); and after the film formation on the substrate 100 is completed in the film formation step (S130).

[0103] Also, for example, consider a case where the rotation state of the substrate support part 317 is monitored from the position side of the heater 381, such as by detecting the distance from the heater 381. In that case as well, the rotation state of the substrate support part 317 may be monitored at least at any one of the following points: before the substrate mounting plate 318 supports the substrate 100 in the substrate carrying-in / mounting step; when the substrate mounting plate 318 supports the substrate 100 in the substrate carrying-in / mounting step; when the substrate mounting plate 318 starts to rotate in the substrate mounting plate rotation start step (S110); and when the film formation on the substrate 100 is completed in the film formation step (S130).

[0104] Also, for example, consider a case where the rotation state of the substrate support part 317 is monitored mainly based on the rotation axis of the substrate mounting plate 318, such as by using the sensor 361 or the sensor 362. In that case, the rotation state of the substrate support part 317 may be monitored at least at any one of the following points: before the substrate mounting plate 318 supports the substrate 100 in the substrate carrying-in / mounting step; when the substrate mounting plate 318 supports the substrate 100 in the substrate carrying-in / mounting step; when the substrate mounting plate 318 starts to rotate in the substrate mounting plate rotation start step (S110); while a film is being formed on the substrate 100 in the film formation step (S130); and after the film formation on the substrate 100 is completed in the film formation step (S130).

[0105] By detecting the rotation state at such implementation timing, even if a change in the rotation state occurs over time while the substrate processing apparatus 200 is in operation, it is possible to accurately grasp the change.

[0106] When monitoring is performed during operation of the substrate processing apparatus 200, it is desirable to detect the rotation state of the substrate support part 317 with gas being supplied from the gas supply part. The gas here means a processing gas or an inert gas. More specifically, when detecting the rotation state of the substrate support part 317, gas is supplied to the processing chamber 301 so that the pressure is the same as that when the substrate 100 is processed in the processing chamber 301. In this way, if the rotation state is detected under the same conditions as when the substrate 100 is processed in the substrate processing step, the detection of the rotation state can be performed with high accuracy. For example, during the maintenance of the apparatus, the pressure in the processing chamber 301 may be lower than that during the substrate processing. In this case, the rotation state of the substrate support part 317 may be different from that during the substrate processing when monitoring is performed. In consideration of this point, it is desirable to monitor the rotation state of the substrate support part 317 under the same conditions (environment) as during the substrate processing.

[0107] (Rotation state control) After the monitoring is performed, the controller 400 as a control section controls the rotation state of the substrate support section 317 based on the detection result obtained by the monitoring from the detection section.

[0108] Specifically, the controller 400 controls the substrate support part 317 to maintain a constant rotation state based on the detection result of the detection part. A constant rotation state means that, for example, the tilt of the rotation axis of the substrate mounting plate 318, the bending of the substrate mounting plate 318, the distance between the substrate mounting plate 318 and the heater 381, the distance between the substrate mounting plate 318 and the nozzles 341, 342, 344, 345, the rotational fluctuation of the substrate mounting plate 318, and the like, fall within a predetermined allowable range and are maintained in that state.

[0109] For example, when the detection unit detects an abnormality in which the number of rotations or the rotation speed of the substrate placement plate 318 is out of the allowable range, the controller 400 issues an operation instruction to the operation unit 319b of the lifting and rotating unit 319 so as to recover from the rotation abnormality (i.e., to bring it within the allowable range). If the rotation speed of the substrate placement plate 318 slows down, the time it takes for the substrate 100 to pass through each of the regions 306a, 307a, 306b, and 307b increases, and the substrate processing time in each of the regions 306a, 307a, 306b, and 307b increases. This may result in a risk of not being able to achieve the desired processing for the substrate 100. In contrast, if the substrate placement plate 318 is controlled to maintain a constant rotation, the gas supply amount in each of the regions 306a, 307a, 306b, and 307b can be maintained constant, and the desired processing can be performed for each substrate 100. If such control of the rotation state is performed based on the detection results obtained by monitoring before the start-up of the apparatus, it becomes possible to eliminate rotation abnormalities caused by machine differences of the substrate processing apparatus 200 and start up the apparatus in a state taking the machine differences into consideration. Also, if such control of the rotation state is performed based on the detection results obtained by monitoring while the apparatus is in operation, it becomes possible to appropriately deal with rotation abnormalities that may occur due to changes over time.

[0110] Furthermore, for example, when the heater 381 is divided into a plurality of zones, if the detector detects an abnormality in which the tilt of the rotation axis of the substrate mounting plate 318 falls outside the allowable range, the controller 400 issues an operation instruction to the heater temperature control unit 387 to lower the heater temperature in the zone in which the distance between the substrate mounting plate 318 and the heater 381 is closer. The same applies when an abnormality is detected in which the substrate mounting plate 318 is deflected, or when an abnormality is detected in which the distance between the substrate mounting plate 318 and the heater 381 falls outside the allowable range. By performing such heater zone control, it is possible to recover from the rotation abnormality of the substrate mounting plate 318 and perform the desired processing on the substrate 100.

[0111] Also, for example, in the case where the attitude control unit 350 is provided, when the detection unit detects an abnormality in which the tilt of the rotation axis of the substrate placement plate 318 is out of the allowable range, the controller 400 issues an operation instruction to the tilt adjustment unit 353 to adjust the attitude of the substrate support unit 317 (particularly, the tilt of the rotation axis by the shaft 322). By controlling to adjust the angle of the rotation axis, the substrate support unit 317 can be set to a predetermined substrate processing angle (i.e., within the allowable range), so that it is possible to recover from the rotation abnormality of the substrate placement plate 318. If such attitude control is performed based on the detection result obtained by monitoring before the start-up of the apparatus, it is possible to eliminate the rotation abnormality caused by the machine difference of the substrate processing apparatus 200 and start up the apparatus in a state in which the machine difference is taken into consideration. In particular, the tilt of the rotation axis of the substrate placement plate 318 is likely to occur due to the machine difference of the substrate processing apparatus 200 due to the convenience of the apparatus manufacturing, and such a difference in the degree of tilt can be absorbed by the attitude control. Furthermore, if such attitude control is performed based on the detection results obtained by monitoring while the device is in operation, it becomes possible to appropriately respond to rotational abnormalities that may occur due to changes over time.

[0112] In addition, when the attitude control unit 350 is provided, the controller 400 may use machine learning to control the attitude of the substrate support unit 317 by the attitude control unit 350. In the case of using machine learning, a recording unit that stores and accumulates information on the detection result of the detection unit is prepared in the controller 400 or in a location accessible by the controller 400. The information stored and accumulated by the recording unit (i.e., information on the detection result of the detection unit) includes, for example, information on the rotation state of the substrate mounting plate 318 identified from the detection result of the detection unit, information on the processing conditions of the substrate processing when the information was obtained, information on the processing result of the substrate processing, and the like. Then, the controller 400 analyzes the rotation state of the substrate mounting plate 318 and the apparatus operation history (the execution history of the substrate processing) by machine learning based on the stored information of the recording unit, and identifies model data on the attitude of the substrate support unit 317 from the analysis result. When the model data is specified, the controller 400 issues an operation instruction to the tilt adjustment unit 353 to adjust the attitude of the substrate support unit 317 (particularly, the tilt of the rotation axis of the shaft 322) based on the specified model data prior to the start of the next substrate processing step. In this way, by using machine learning to control the attitude of the substrate support unit 317, it becomes possible to reflect other information (history information, etc.) in addition to the detection result of the detection unit in the attitude control, which is preferable for appropriately performing substrate processing.

[0113] When the detection unit detects an abnormality in the rotation state of the substrate support unit 317, the controller 400 may, in addition to or instead of the above-mentioned control, control the substrate 100 transferred into the processing chamber 301 to be unloaded from the processing chamber 301. By controlling the unloading of the substrate 100 in this manner, it becomes possible to distinguish a substrate 100 that may not have been subjected to the desired processing due to an abnormality in the rotation state from a normal substrate.

[0114] (4) Effects of this embodiment According to the present embodiment, one or more of the following advantages are achieved.

[0115] (a) According to this embodiment, when processing is performed on the multiple substrates 100 while rotating the substrate support part 317 that supports the multiple substrates 100, the detection part detects the rotation state of the substrate support part 317. Therefore, even if an abnormality occurs in the rotation state of the substrate support part 317, this is detected by the detection part, and it becomes possible to eliminate the influence of an abnormality in the rotation state causing variations in the processing quality of the substrates 100 in the processing performed on the substrates 100. In other words, when processing the multiple substrates 100 while rotating, a desired processing quality can be obtained for each substrate 100.

[0116] (b) According to this embodiment, the heater 380 is provided to face the substrate mounting plate 318 serving as a rotating part constituting the substrate support part 317, and the detection part detects the rotation state of the substrate mounting plate 318. Therefore, if an abnormality occurs in the rotation state of the substrate mounting plate 318, there is a risk that the relationship between each substrate 100 on the substrate mounting plate 318 and the heater 380 will vary, but since this is detected by the detection part, it is possible to eliminate the influence of such variation. In other words, when a plurality of substrates 100 are placed on the substrate mounting plate 318 and the substrate mounting plate 318 is rotated for processing, a desired processing quality can be obtained for each substrate 100.

[0117] (c) As described in this embodiment, if the detection unit has at least one of the sensor 361 that detects the position of the edge portion 318a of the substrate mounting plate 318, the sensor 362 that is arranged so that sensing light passes along the plate surface of the substrate mounting plate 318, and the sensor 363 that detects the distance 318c between the substrate mounting plate 318 and the heater 381, then the inclination or bending of the substrate mounting plate 318 can be reliably detected.

[0118] (d) As described in this embodiment, if the detection unit is configured to detect changes in the power supplied to the electric motor, it can reliably detect rotational fluctuations when the substrate mounting plate 318 rotates.

[0119] (e) According to this embodiment, based on the detection result of the detection unit, the controller 400 controls the rotation state of the substrate support unit 317. Therefore, even if an abnormality occurs in the rotation state of the substrate support unit 317, it is possible to process each substrate 100 while controlling the rotation state so as not to be affected by the abnormality, and therefore it is possible to obtain a desired processing quality for each substrate 100.

[0120] (f) As described in this embodiment, if monitoring is performed to obtain detection results from the detection unit before starting up the equipment, even if differences in the rotation state occur due to machine differences in the substrate processing equipment 200, it is possible to accurately grasp the differences due to the machine differences.

[0121] (g) When controlling the rotational state of the substrate support part 317, as described in this embodiment, by controlling the rotational state of the substrate support part 317 to be constant, it is possible to reliably eliminate effects such as variations in the processing quality of each substrate 100.

[0122] (h) As described in this embodiment, when the heater 381 is divided into multiple zones, by adjusting the temperature of each zone individually based on the detection results of the detection unit, it becomes possible to recover from rotation abnormalities in the substrate mounting plate 318 and perform the desired processing on the substrate 100.

[0123] (i) As described in this embodiment, when the attitude control unit 350 is provided, by adjusting the attitude of the substrate support unit 317 (particularly, the inclination of the rotation axis of the shaft 322) based on the detection result of the detection unit so that the substrate support unit 317 has a predetermined substrate processing angle, it becomes possible to recover from rotation abnormality of the substrate mounting plate 318. In particular, by performing such attitude control based on the detection result obtained by monitoring before the start-up of the apparatus, it becomes possible to eliminate rotation abnormality caused by machine differences of the substrate processing apparatus 200 and start up the apparatus in a state in which the machine differences are taken into consideration.

[0124] (j) As described in this embodiment, if the detection unit is configured to detect the rotational state of the substrate support unit 317 while gas is being supplied from the gas supply unit, the rotational state can be detected under the same conditions as when the substrate 100 is processed in the substrate processing step, so that the rotational state can be detected with high accuracy.

[0125] (k) As described in this embodiment, when the detection unit detects the rotational state of the substrate support unit 317, if gas is supplied to the processing chamber 301 at a pressure equivalent to the pressure when processing the substrate 100 in the processing chamber 301, the rotational state can be detected under the same conditions as when processing the substrate 100 in the substrate processing step, and therefore the rotational state can be detected with high accuracy.

[0126] (5) Modifications, etc. Although one embodiment of the present disclosure has been specifically described above, the present disclosure is not limited to the above-described embodiment, and various modifications are possible without departing from the spirit and scope of the present disclosure.

[0127] For example, in the above embodiment, the case where the substrate mounting plate 318 on which the multiple substrates 100 are mounted rotates, that is, the case where each substrate 100 revolves, is taken as an example, but the present invention is not limited to this. Each substrate 100 may be supported so as to rotate on its axis in addition to revolving. In this case, the substrate support unit 317 has a rotating unit (e.g., the substrate mounting plate 318) that supports the multiple substrates 100 so that they can revolve, and a rotating unit that supports each of the substrates 10 so that they can rotate on their axis. The rotating unit can be configured using known technology. In the substrate support unit 317 configured in this way, the detection unit is capable of detecting the rotation state of at least one of the rotating unit and the rotating unit, and preferably both. This makes it possible to respond to not only an abnormality in the rotation state of the rotating unit but also an abnormality in the rotation state of the rotating unit, which is very suitable for performing the desired processing on the substrate 100.

[0128] Also, for example, in the above-mentioned embodiment, DCS gas is exemplified as the raw material gas, which is the first gas, but the present invention is not limited thereto. As the raw material gas, in addition to DCS gas, chlorosilane raw material gases containing Si-Cl bonds, such as hexachlorodisilane (Si2C6, abbreviated as HCDS) gas, monochlorosilane (SiH3Cl, abbreviated as MCS) gas, trichlorosilane (SiHCl3, abbreviated as TCS) gas, tetrachlorosilane (SiCl4, abbreviated as STC) gas, and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) gas, can be used.

[0129] In addition, for example, in the above-mentioned embodiment, the second gas, which is the reactive gas, is exemplified as NH3 gas, but is not limited thereto. As the reactive gas, in addition to NH3 gas, a hydrogen nitride gas containing an NH bond, such as diazane (N2H2) gas, hydrazine (N2H4) gas, or N3H8 gas, can be used.

[0130] In addition, for example, in the above-described embodiment, N2 gas is used as an example of the inert gas, but the present invention is not limited to this. As the inert gas, in addition to N2 gas, rare gases such as Ar gas, He gas, Ne gas, and Xe gas can be used.

[0131] In the above embodiment, a film formation process on the substrate 100 is taken as an example of the substrate processing step, but the present invention is not limited to this and can be applied to other processes as long as they require the supply and exhaust of gas. Examples of other processes include a diffusion process, an oxidation process, a nitridation process, an oxynitridation process, a reduction process, an oxidation-reduction process, an etching process, and a heating process. [Explanation of symbols]

[0132] 100 Substrates 200 Substrate processing equipment 240 First Gas Supply Section 250 Second gas supply section 260 Purge gas supply section (inert gas supply section) 270 Third Gas Supply Section 301 Processing Room 302 Chamber (processing vessel) 306a First Processing Area (First Domain) 306b Second processing area (second domain) 307a First purge domain 307b Second purge domain 317 Substrate support 318 Substrate mounting plate (rotating part) 319 Lifting and rotating part 319f Tachometer (detection part) 322 Shaft (support shaft) 351 Sensor (detection unit) 352 Sensor (detection part) 353 Sensor (detection part) 380 Heater (Heater part) 400 Controller (control unit)

Claims

1. a processing chamber for processing a substrate; a gas supply unit capable of supplying gas to the processing chamber; a substrate support unit that is rotatably provided in the processing chamber and that is capable of supporting a plurality of the substrates in a circumferential direction; A detection unit that detects a rotation state of the substrate support unit; A substrate processing apparatus comprising:

2. the substrate support portion includes a plate-shaped rotating portion that supports the substrate, and a support shaft that rotatably supports the rotating portion, a heater for heating the substrate is provided facing the rotating part; The detection unit is capable of detecting whether or not there is an abnormality in the state of the rotating unit. The substrate processing apparatus according to claim 1 .

3. The detection unit has a sensor that detects the position of an edge portion of the rotating unit. The substrate processing apparatus according to claim 2 .

4. The sensor is disposed along the outer circumferential shape of the rotating part. The substrate processing apparatus according to claim 3 .

5. The detection unit has a sensor arranged so that sensing light passes along a plate surface of the rotating unit. The substrate processing apparatus according to claim 2 .

6. The detection unit has a sensor that detects the distance between the rotating unit and the heater. The substrate processing apparatus according to claim 2 .

7. The detection unit detects at least one of the inclination and the bending of the rotating unit. The substrate processing apparatus according to claim 2 .

8. a control unit configured to be able to control a rotation state of the substrate support unit based on a detection result of the detection unit; The substrate processing apparatus according to claim 1 .

9. An electric motor serving as a drive source for rotating the support shaft is provided, The detection unit detects a change in the power supplied to the electric motor. The substrate processing apparatus according to claim 2 .

10. The detection unit detects a rotation state of the substrate support unit before starting up the apparatus. The substrate processing apparatus according to claim 1 .

11. The control unit controls the rotation state of the substrate support unit to be constant based on a detection result of the detection unit. The substrate processing apparatus according to claim 8 .

12. The heater is partitioned into a plurality of zones along the circumferential direction of the rotating part, and is configured to be able to adjust the temperature of each of the plurality of zones individually based on the detection result of the detection part. The substrate processing apparatus according to claim 2 .

13. a posture control unit that adjusts the angle of the shaft supporting the substrate support unit based on the detection result of the detection unit so that the substrate support unit is at a predetermined substrate processing angle; The substrate processing apparatus according to claim 1 .

14. The attitude control unit adjusts the angle of the axis based on the detection result of the detection unit before the start-up of the device. The substrate processing apparatus of claim 13 .

15. A recording unit that stores information regarding the detection result of the detection unit, The posture control unit adjusts the angle of the axis based on an analysis result of the information stored in the recording unit prior to processing of the substrate in the processing chamber. The substrate processing apparatus of claim 13 .

16. The detection unit detects a rotation state of the substrate support unit while gas is being supplied from the gas supply unit. The substrate processing apparatus according to claim 1 .

17. The gas supply unit supplies gas to the processing chamber so as to achieve a pressure for processing the substrate when the detection unit detects the rotation state of the substrate support unit. The substrate processing apparatus of claim 16 .

18. The substrate support includes: A rotating unit that supports the plurality of substrates so that they can revolve; a rotation unit that supports the substrate so that the substrate can rotate about its axis, The detection unit is capable of detecting a rotation state of at least one of the rotating unit and the rotating unit. The substrate processing apparatus according to claim 1 .

19. rotating a substrate support capable of supporting a plurality of substrates in a circumferential manner within a processing chamber for processing the substrates; detecting a rotation state of the rotation support part; The rotation state detection method includes the steps of:

20. The method for detecting a rotation state according to claim 19 includes the steps of: supplying a gas to the processing chamber while the substrate is supported on the substrate support; A method for manufacturing a semiconductor device having the above structure.

21. rotating a substrate support capable of supporting a plurality of substrates in a circumferential manner within a processing chamber for processing the substrates; detecting a rotation state of the rotation support part; A program for causing a computer to execute the above in a substrate processing apparatus.

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