Inspection device, inspection system, inspection method, and manufacturing method of semiconductor device

Abstract

To provide an inspection device, an inspection system, an inspection method, and a manufacturing method of a semiconductor device, which can improve efficiency.SOLUTION: An inspection device according to an embodiment of the present invention includes a control unit electrically connected to a semiconductor device. The semiconductor device includes a semiconductor member, a transistor unit, and a diode unit. The transistor unit includes a source electrode, a drain electrode, and a gate electrode. The control unit can perform a first operation, a first progress operation, a second operation, and a first determination operation. The control unit detects a drain potential by making the gate electrode ON potential in a state in which a current source is connected to the drain electrode in the first operation. The control unit makes the gate electrode OFF potential in a state in which the current source is connected to the drain electrode in the first progress operation. The control unit detects the drain potential by making the gate electrode ON potential in the second operation. The control unit inspects the semiconductor device on the basis of a difference of detection values in the first determination operation.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to an inspection device, an inspection system, an inspection method, and a method for manufacturing a semiconductor device. [Background technology]

[0002] For example, in the manufacture of semiconductor devices, inspection of the semiconductor devices is performed, and it is desirable to improve the efficiency of the inspection. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-105804 A Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide an inspection device, an inspection system, an inspection method, and a method for manufacturing a semiconductor device that can improve efficiency. [Means for solving the problem]

[0005] According to an embodiment, the inspection device includes a control unit capable of being electrically connected to a semiconductor device. The semiconductor device includes a semiconductor member, a transistor unit, and a diode unit. The transistor unit and the diode unit are provided on the semiconductor member. The transistor unit includes a source electrode, a drain electrode, and a gate electrode. The diode unit includes a first end and a second end. The first end is electrically connected to the source electrode. The second end is electrically connected to the drain electrode. The control unit is capable of performing a first operation, a first transition operation, a second operation, and a first determination operation. The first transition operation is performed after the first operation. The second operation is performed after the first transition operation. In the first operation, the control unit sets the gate electrode to an ON potential with a current source electrically connected to the drain electrode, and detects a first detection value of a drain potential of the drain electrode. The current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode. In the first transition operation, the control unit sets the gate electrode to an OFF potential with the current source electrically connected to the drain electrode. In the second operation, the control unit sets the gate electrode to the on potential and detects a second detection value of the drain potential with the current source electrically connected to the drain electrode. In the first determination operation, the control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic view illustrating the inspection device according to the first embodiment. [Diagram 2] FIG. 2 is a flowchart illustrating the operation of the inspection apparatus according to the first embodiment. [Diagram 3] 3A and 3B are schematic views illustrating the operation of the inspection device according to the first embodiment. [Figure 4] FIG. 4 is a flowchart illustrating a method for manufacturing a semiconductor device according to the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a schematic view illustrating the inspection device according to the first embodiment. 1, an inspection apparatus 210 according to an embodiment includes a control unit 70. The control unit 70 can be electrically connected to a semiconductor device 10 to be inspected. The inspection apparatus 210 may further include a storage unit 72. The storage unit 72 may be provided separately from the inspection apparatus 210. The storage unit 72 may be provided in a location different from where the control unit 70 is provided. An inspection system 310 according to an embodiment includes the control unit 70 and the storage unit 72.

[0009] 1, the semiconductor device 10 includes a semiconductor member 55, a transistor section 50, and a diode section 60. The transistor section 50 and the diode section 60 are provided in the semiconductor member 55. The transistor section 50 is provided in a part of the semiconductor member 55, and the diode section 60 is provided in another part of the semiconductor member 55. For example, the semiconductor device 10 is a transistor incorporating the diode section 60. The transistor section 50 and the diode section 60 are provided in one chip.

[0010] The semiconductor member 55 includes, for example, SiC. For example, the diode portion 60 may be a Schottky diode.

[0011] The transistor section 50 includes a source electrode 50S, a drain electrode 50D, and a gate electrode 50G. The diode section 60 includes a first end 61 and a second end 62. The first end 61 is electrically connected to the source electrode 50S. The second end 62 is electrically connected to the drain electrode 50D. The first end 61 is common to the source electrode 50S. The second end 62 is common to the drain electrode 50D.

[0012] For example, the inspection device 210 may include a plurality of probes. For example, the inspection device 210 includes a drain probe 75D and a gate probe 75G. The drain probe 75D can be electrically connected to the drain electrode 50D. The gate probe 75G can be electrically connected to the gate electrode 50G. The source electrode 50S can be electrically connected to the control unit 70 via a ground conductive member, for example.

[0013] A voltage is applied to the semiconductor device 10 via these probes, and testing of the semiconductor device 10 is carried out.

[0014] 1, testing may be performed on a plurality of semiconductor devices 10. In this case, a plurality of drain probes 75D and a plurality of gate probes 75G may be provided.

[0015] 1, in the inspection device 210, the control unit 70 may include a power supply 73P, a switch unit 73S, and a detection circuit 73D. In various operations described later, the switch unit 73S applies a gate voltage from the power supply 73P to the gate electrode 50G at a desired timing.

[0016] The detection circuit 73D can detect, for example, the potential of the drain electrode 50D. The detection circuit 73D can detect values ​​related to electrical characteristics of the semiconductor device 10 based on, for example, the timing of various operations described below. For example, an operation based on an interlock signal may be performed. For example, a synchronization signal may be supplied to the detection circuit 73D from the switch unit 73S.

[0017] 1, a current source 74c may be provided. The current source 74c may be electrically connected to the drain electrode 50D. The current source 74c may supply a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S. The operation of the current source 74c may be controlled by, for example, the detection circuit 73D.

[0018] The power supply 73P may be prepared separately from the inspection equipment 210. The power supply 73P may be included in the inspection equipment 210. The current source 74c may be prepared separately from the inspection equipment 210. The current source 74c may be included in the inspection equipment 210.

[0019] As shown in Fig. 1, a processing unit 71 may be provided. As shown in Fig. 1, a storage unit 72 may be provided. The processing unit 71 is capable of processing various types of data. For example, the processing unit 71 is capable of processing detected values. The processing unit 71 may store the processed values ​​in the storage unit 72. The processing unit 71 may be capable of performing a process of comparing a value based on the detected values ​​with a reference value or the like. For example, the result of the comparison corresponds to an inspection result of the semiconductor device 10.

[0020] The processing unit 71 may be included in the control unit 70. The processing unit 71 may be provided in a location different from where the switch unit 73S and the like are provided. The storage unit 72 may be included in the control unit 70. The storage unit 72 may be provided in a location different from where the switch unit 73S and the like are provided.

[0021] The control unit 70 can inspect the semiconductor device 10 by performing an operation to be described later.

[0022] FIG. 2 is a flowchart illustrating the operation of the inspection apparatus according to the first embodiment. As shown in Fig. 2, in the inspection device 210, the control unit 70 can perform a first operation OP1, a first transition operation OE1, a second operation OP2, and a first determination operation DC1. The first transition operation OE1 is performed after the first operation OP1. The second operation OP2 is performed after the first transition operation OE1. The first determination operation DC1 is performed after the second operation OP2. The second determination operation DC2 may also be performed. Examples of these operations will be described below.

[0023] 3A and 3B are schematic views illustrating the operation of the inspection device according to the first embodiment. These figures correspond to time charts of the operation. The horizontal axis of these figures is time tm. The vertical axis of FIG. 3(a) is the gate voltage Vgs. The gate voltage Vgs is the voltage of the gate electrode 50G with respect to the potential of the source electrode 50S. The vertical axis of FIG. 3(b) is the drain potential Vsd. The drain potential Vsd is the voltage of the drain electrode 50D with respect to the potential of the source electrode 50S.

[0024] As shown in FIG. 1, in the following operation, the current source 74c is electrically connected to the drain electrode 50D. As shown in FIG. 3(b), in a first operation OP1, the control unit 70 sets the gate electrode 50G to an on-potential Von during a first period TP1 in a state in which the current source 74c is electrically connected to the drain electrode 50D. In the first operation OP1, the current source 74c can supply a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S. The first period TP1 is, for example, a period from a first time t1 to a second time t2.

[0025] 3B, in the first operation OP1, the control unit 70 detects a first detection value VD1 of the drain potential Vsd of the drain electrode 50D. The control unit 70 may store the first detection value VD1 in the storage unit 72 in the first operation OP1.

[0026] 3(a), in the first elapsed operation OE1, the control unit 70 sets the gate electrode 50G to the off potential Voff during a first elapsed period TE1 in a state in which the current source 74c is electrically connected to the drain electrode 50D. The first elapsed period TE1 is, for example, a period from a second time t2 to a third time t3.

[0027] As shown in FIG. 3(b), in the first elapsed period TE1, the drain potential Vsd becomes, for example, a first elapsed-period potential VDE.

[0028] As shown in FIG. 3(a), in the second operation OP2, the control unit 70 sets the gate electrode 50G to the on potential Von during the second period TP2 in a state in which the current source 74c is electrically connected to the drain electrode 50D.

[0029] 3B, in the second operation OP2, the control unit 70 detects a second detection value VD2 of the drain potential Vsd. The control unit 70 may cause the storage unit 72 to store the second detection value VD2.

[0030] In the first determining operation DC1, the control section 70 is able to inspect the semiconductor device 10 based on the difference ΔV (see FIG. 3(b)) between the first detection value VD1 and the second detection value VD2.

[0031] Thus, in the embodiment, in the first operation OP1, the first detection value VD1 of the drain potential Vsd is detected as an initial value. Thereafter, in the first elapsed operation OE1, the current source 74c is supplied to the drain electrode 50D with the gate electrode 50G at the off potential Voff. In this first elapsed operation OE1, the state of the semiconductor member 55 in the semiconductor device 10 may change. For example, holes are injected from the drain electrode 50D into the semiconductor member 55, and crystal defects are expanded. The expansion of the crystal defects changes the characteristics of the semiconductor device 10. For example, the forward voltage VF changes.

[0032] In a second operation OP2 after the first elapsed operation OE1, a second detection value VD2 of the drain potential Vsd is detected. In the above-mentioned first elapsed operation OE1, if the state of the semiconductor member 55 changes, the second detection value VD2 changes from the first detection value VD1. On the other hand, in the first elapsed operation OE1, if the state of the semiconductor member 55 does not substantially change, the second detection value VD2 is substantially the same as the first detection value VD1.

[0033] A change in the state of the semiconductor member 55 can be detected based on the difference ΔV between the first detection value VD1 and the second detection value VD2. For example, the difference ΔV is compared with a threshold value. If the difference ΔV is equal to or less than the threshold value, the semiconductor device 10 is determined to be a non-defective product. If the difference ΔV exceeds the threshold value, the semiconductor device 10 is determined to be a defective product. Such a first determination operation DC1 makes it possible to inspect the semiconductor device 10 with high efficiency. According to the embodiment, an inspection device capable of improving efficiency can be provided.

[0034] For example, there is a first reference example in which a change in the state of the semiconductor member 55 is evaluated by detecting a change in the forward voltage VF. The sensitivity of the change in the forward voltage VF detected in the first reference example is low. For this reason, in the first reference example, it is difficult to detect the change in the state of the semiconductor member 55 with high sensitivity.

[0035] In contrast, in the embodiment, the first detection value VD1 and the second detection value VD2 are detected in a state in which the on-potential Von is applied to the gate electrode 50G. These detection values ​​reflect the characteristics of the on-resistance Ron. The sensitivity to changes in these detection values ​​is high. In the embodiment, a highly sensitive result is possible by evaluating the difference ΔV between the first detection value VD1 and the second detection value VD2.

[0036] In the embodiment, the synchronous rectification mode operation illustrated in Fig. 3(a) and Fig. 3(b) is performed. Rectification is performed in synchronization with the on / off of the gate voltage Vgs. High-precision detection can be performed with high efficiency.

[0037] For example, in a MOS transistor including a reverse conducting diode, when a current is passed through the reverse conducting diode, crystal defects present in the semiconductor member 55 (e.g., a SiC layer) expand. When the crystal defects expand, the forward voltage VF increases, and the on-resistance Ron increases. Chips in which such characteristic variations occur due to the current passing through the reverse conducting diode are removed by inspection. In an embodiment, an inspection device capable of efficiently detecting defective products can be provided.

[0038] 3A, the on-potential Von and the off-potential Voff may satisfy the following first or second condition. In the first condition, the on-potential Von is positive with respect to the source potential of the source electrode 50S. In the first condition, the off-potential Voff is negative with respect to the source potential.

[0039] In the second condition, the on-potential Von and the off-potential Voff are positive with respect to the source potential. In the second condition, a first difference between the off-potential Voff and the source potential is smaller than a second difference between the on-potential Von and the source potential.

[0040] In one example, the on potential Von may be greater than or equal to +10V and less than or equal to +30V (eg, +15V). In one example, the off potential Voff may be greater than or equal to -8V and less than or equal to -1V (eg, -5V).

[0041] In the embodiment, the first elapsed period TE1 is longer than the second period TP2. The long first elapsed period TE1 allows the crystal defects to expand efficiently. The short second period TP2 allows the inspection time to be shortened.

[0042] In one example, the first period TP1 is longer than the second period TP2. Since the first period TP1 for detecting the initial state is long, the first detection value VD1 can be stably detected.

[0043] In one example, the first elapsed period TE1 may be shorter than the first period TP1.

[0044] The length of the first period TP1 may be, for example, 0.1 s or more and 15 s or less, the length of the first elapsed period TE1 may be, for example, 1 ms or more and 1 H or less, and the length of the second period TP2 may be, for example, 100 μs or more and 15 s or less.

[0045] For example, the control unit 70 may be able to detect the first detection value VD1 at any time during the first period TP1, and the control unit 70 may be able to detect the second detection value VD2 at any time during the second period TP2.

[0046] For example, the control unit 70 may be able to detect a first detection value VD1 at a first end time of the first period TP1. The control unit 70 may be able to detect a second detection value VD2 at a second end time of the second period TP2.

[0047] As shown in Fig. 3(a) and Fig. 3(b), the first process operation OE1 and the second operation OP2 may be performed repeatedly. For example, the control unit 70 may further perform another first process operation OE1 after the second operation OP2. The control unit 70 may further perform another second operation OP2 after the other first process operation OE1.

[0048] 2, the first progress operation OE1, the second operation OP2, and the first determination operation DC1 may be performed repeatedly. A determination (the first determination operation DC1) may be performed in each of the multiple repetitions.

[0049] For example, when the number of repeated operations exceeds a predetermined number, a second determining operation DC2 may be performed. In the second determining operation DC2, an inspection of the semiconductor device 10 is performed based on the results of the first determining operation DC1 performed multiple times. For example, the second determining operation DC2 may be performed based on changes in the results of the first determining operation DC1 performed multiple times.

[0050] The control unit 70 may be capable of simultaneously performing at least a part of the first operation OP1 for the multiple semiconductor devices 10. The control unit 70 may be capable of simultaneously performing at least a part of the first elapsed operation OE1 for the multiple semiconductor devices 10. The control unit 70 may be capable of simultaneously performing at least a part of the second operation OP2 for the multiple semiconductor devices 10. This enables efficient inspection.

[0051] Second embodiment The second embodiment relates to an inspection system 310 (see FIG. 1). The inspection system 310 includes a control unit 70 that can be electrically connected to the semiconductor device 10, and a storage unit 72. In the inspection system 310, the control unit 70 can perform the above-mentioned operations. According to the second embodiment, it is possible to provide an inspection system that can improve efficiency.

[0052] Third embodiment The third embodiment relates to an inspection method. In the inspection method, at least a part of the operation described with reference to FIG. 2 is performed. The inspection method according to the third embodiment is an inspection method for inspecting a semiconductor device 10. As described with reference to FIG. 1, the semiconductor device 10 includes a semiconductor member 55, a transistor section 50, and a diode section 60. The transistor section 50 and the diode section 60 are provided in the semiconductor member 55. The transistor section 50 is provided in a part of the semiconductor member 55, and the diode section 60 is provided in another part of the semiconductor member 55. The transistor section 50 includes a source electrode 50S, a drain electrode 50D, and a gate electrode 50G. The diode section 60 includes a first end 61 and a second end 62. The first end 61 is electrically connected to the source electrode 50S. The second end 62 is electrically connected to the drain electrode 50D.

[0053] In the inspection method according to the third embodiment, a first operation OP1, a first transition operation OE1, a second operation OP2, and a first determination operation DC1 are performed (see FIG. 2). The first transition operation OE1 is performed after the first operation OP1. The second operation OP2 is performed after the first transition operation OE1.

[0054] 3(a), in a first operation OP1, with the current source 74c electrically connected to the drain electrode 50D, the gate electrode 50G is set to an on-potential Von, and a first detection value VD1 of the drain potential Vsd of the drain electrode 50D is detected. The current source 74c supplies a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S.

[0055] As shown in FIG. 3(a), in the first elapsed operation OE1, the gate electrode 50G is set to the off potential Voff in a state in which the current source 74c is electrically connected to the drain electrode 50D.

[0056] 3(a), in a second operation OP2, with a current source 74c electrically connected to the drain electrode 50D, the gate electrode 50G is set to an on-potential Von, and a second detection value VD2 of the drain potential Vsd is detected. In a first determination operation DC1, the semiconductor device 10 is inspected based on a difference ΔV between the first detection value VD1 and the second detection value VD2. According to the embodiment, it is possible to provide an inspection system capable of improving efficiency.

[0057] In the third embodiment, the configuration described in relation to the first or second embodiment may be applied. For example, the first elapsed period TE1 of the first elapsed operation OE1 may be longer than the second period TP2 of the second operation OP2. For example, the first detection value VD1 may be detected at a first end time of the first period TP1 of the first operation OP1, and the second detection value VD2 may be detected at a second end time of the second period TP2 of the second operation OP2.

[0058] For example, the on potential Von and the off potential Voff may satisfy a first condition or a second condition. In the first condition, the on potential Von is positive with respect to the source potential of the source electrode 50S, and the off potential Voff is negative with respect to the source potential. In the second condition, the on potential Von and the off potential Voff are positive with respect to the source potential. In the second condition, a first difference between the off potential Voff and the source potential is smaller than a second difference between the on potential Von and the source potential.

[0059] In the third embodiment, the semiconductor member 55 may also include SiC. The diode section 60 may be, for example, a Schottky diode.

[0060] (Fourth embodiment) FIG. 4 is a flowchart illustrating a method for manufacturing a semiconductor device according to the fourth embodiment. 4, in the manufacturing method of the semiconductor device 10, the semiconductor device 10 is fabricated (step S110). The inspection method described in relation to the third embodiment is carried out (step S120). In this way, the semiconductor device 10 is inspected. In the fourth embodiment, the semiconductor member 55 included in the semiconductor device 10 contains SiC.

[0061] The embodiments may include the following technical solutions. (Technical proposal 1) A control unit capable of being electrically connected to the semiconductor device, The semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, The transistor portion and the diode portion are provided on the semiconductor member, the transistor portion includes a source electrode, a drain electrode, and a gate electrode; the diode portion includes a first end and a second end, the first end is electrically connected to the source electrode; the second end is electrically connected to the drain electrode; The control unit is capable of performing a first operation, a first progress operation, a second operation, and a first determination operation; the first transitional action is performed after the first action; The second action is performed after the first action, in the first operation, the control unit sets the gate electrode to an on potential and detects a first detection value of a drain potential of the drain electrode in a state in which a current source is electrically connected to the drain electrode, and the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode; the control unit, in the first transition operation, sets the gate electrode to an off potential in a state in which the current source is electrically connected to the drain electrode; the control unit, in the second operation, sets the gate electrode to the on potential in a state in which the current source is electrically connected to the drain electrode, and detects a second detection value of the drain potential; The control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value in the first determination operation.

[0062] (Technical proposal 2) The inspection device described in Technical Proposal 1, wherein a first elapsed period of the first elapsed operation is longer than a second period of the second operation.

[0063] (Technical proposal 3) The inspection device described in Technical Proposal 2, wherein the first period of the first operation is longer than the second period.

[0064] (Technical proposal 4) The inspection device according to technical proposal 3, wherein the first elapsed period is shorter than the first period.

[0065] (Technical proposal 5) the control unit is capable of detecting the first detection value at an arbitrary time during a first period of the first operation, The inspection device described in Technical Proposal 1, wherein the control unit is capable of detecting the second detection value at any time during the second period of the second operation.

[0066] (Technical proposal 6) The control unit is capable of detecting the first detection value at a first end time of a first period of the first operation, The inspection device described in Technical Proposal 1, wherein the control unit is capable of detecting the second detection value at the second end of the second period of the second operation.

[0067] (Technical proposal 7) The inspection device according to any one of Technical Solutions 1 to 6, further comprising the current source.

[0068] (Technical proposal 8) the on potential and the off potential satisfy a first condition or a second condition, In the first condition, the on potential is positive with respect to a source potential of the source electrode, and the off potential is negative with respect to the source potential; An inspection device described in any one of Technical Proposals 1 to 7, wherein, in the second condition, the on potential and the off potential are positive with respect to the source potential, and a first difference between the off potential and the source potential is smaller than a second difference between the on potential and the source potential.

[0069] (Technical proposal 9) The inspection device according to any one of Technical Schemes 1 to 8, wherein the semiconductor member includes SiC.

[0070] (Technical proposal 10) The control unit is capable of further performing another first process operation after the second operation, The inspection device according to any one of Technical Solutions 1 to 9, wherein the control unit is further capable of performing a separate second operation after the separate first progress operation.

[0071] (Technical proposal 11) the control unit is capable of simultaneously performing at least a portion of the first operation on a plurality of the semiconductor devices; The inspection device according to any one of Technical Solutions 1 to 10, wherein the control unit is capable of simultaneously performing at least a part of the first elapsed operation for the plurality of semiconductor devices.

[0072] (Technical proposal 12) a drain probe electrically connectable to the drain electrode; a gate probe electrically connectable to the gate electrode; The inspection device according to any one of Technical Solutions 1 to 11, further comprising:

[0073] (Technical proposal 13) A control unit capable of being electrically connected to the semiconductor device; A storage unit; Equipped with The semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, The transistor portion and the diode portion are provided on the semiconductor member, the transistor portion includes a source electrode, a drain electrode, and a gate electrode; the diode portion includes a first end and a second end, the first end is electrically connected to the source electrode; the second end is electrically connected to the drain electrode; The control unit is capable of performing a first operation, a first progress operation, a second operation, and a first determination operation; the first transitional action is performed after the first action; The second action is performed after the first action, in the first operation, the control unit sets the gate electrode to an on potential and detects a first detection value of a drain potential of the drain electrode in a state in which a current source is electrically connected to the drain electrode, and the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode; the control unit, in the first transition operation, sets the gate electrode to an off potential in a state in which the current source is electrically connected to the drain electrode; the control unit, in the second operation, sets the gate electrode to the on potential in a state in which the current source is electrically connected to the drain electrode, and detects a second detection value of the drain potential; The control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value in the first determination operation.

[0074] (Technical proposal 14) 1. A method for inspecting a semiconductor device, comprising: The semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, The transistor portion and the diode portion are provided on the semiconductor member, the transistor portion includes a source electrode, a drain electrode, and a gate electrode; the diode portion includes a first end and a second end, the first end is electrically connected to the source electrode; the second end is electrically connected to the drain electrode; A first operation, a first progress operation, a second operation, and a first determination operation are performed; the first transitional action is performed after the first action; The second action is performed after the first action, In the first operation, in a state where a current source is electrically connected to the drain electrode, the gate electrode is set to an on potential, a first detection value of a drain potential of the drain electrode is detected, and the current source supplies a first current to the drain electrode in a direction from the drain electrode to the source electrode; In the first transition operation, the gate electrode is set to an off potential in a state in which the current source is electrically connected to the drain electrode; In the second operation, in a state in which the current source is electrically connected to the drain electrode, the gate electrode is set to the on potential, and a second detection value of the drain potential is detected; the first determining operation inspects the semiconductor device based on a difference between the first detection value and the second detection value.

[0075] (Technical proposal 15) The inspection method described in Technical Proposal 14, wherein a first elapsed time period of the first elapsed action is longer than a second time period of the second action.

[0076] (Technical proposal 16) Detecting the first detection value at a first end of a first period of the first operation; The inspection device described in technical proposal 14 detects the second detection value at a second end of a second period of the second operation.

[0077] (Technical proposal 17) the on potential and the off potential satisfy a first condition or a second condition, In the first condition, the on potential is positive with respect to a source potential of the source electrode, and the off potential is negative with respect to the source potential; An inspection method described in any one of Technical Proposals 14 to 16, wherein, in the second condition, the on potential and the off potential are positive with respect to the source potential, and a first difference between the off potential and the source potential is smaller than a second difference between the on potential and the source potential.

[0078] (Technical proposal 18) The inspection method according to any one of Technical Schemes 14 to 17, wherein the semiconductor member contains SiC.

[0079] (Technical proposal 19) The semiconductor device is manufactured, A method for manufacturing a semiconductor device, comprising carrying out the inspection method according to any one of Technical Schemes 14 to 17 to inspect the semiconductor device.

[0080] (Technical proposal 20) A method for manufacturing a semiconductor device according to Technical Proposal 19, wherein the semiconductor component contains SiC.

[0081] According to the embodiments, it is possible to provide an inspection device, an inspection system, an inspection method, and a manufacturing method of a semiconductor device that can improve efficiency.

[0082] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element, such as a control unit and a storage unit, included in the semi-inspection device or the inspection system are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from the known range.

[0083] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0084] In addition, all inspection devices, inspection systems, inspection methods, and semiconductor device manufacturing methods that can be implemented by a person skilled in the art by making appropriate design modifications based on the inspection device, inspection system, inspection method, and semiconductor device manufacturing method described above as embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0085] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0086] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0087] 10: semiconductor device, 50: transistor section, 50D: drain electrode, 50G: gate electrode, 50S: source electrode, 55: semiconductor member, 60: diode section, 61, 62: first and second terminals, 70: control section, 71: processing section, 72: memory section, 73D: detection circuit, 73P: power supply, 73S: switch section, 74c: current source, 75D: drain probe, 75G: gate probe, 210: inspection device, 310: inspection system, DC1, DC2: first and second determination operations, OE1: first elapsed operation, OP1, OP2: first and second operations, TE1: first elapsed period, TP1, TP2: first and second periods, VD1, VD2: first and second detected values, VDE: first elapsed period potential, Vgs: gate voltage, Voff: off potential, Von: on-potential, Vsd: drain potential, t1 to t3: first to third time

Claims

1. A control unit capable of being electrically connected to the semiconductor device, The semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, The transistor portion and the diode portion are provided on the semiconductor member, the transistor portion includes a source electrode, a drain electrode, and a gate electrode; the diode portion includes a first end and a second end; the first end is electrically connected to the source electrode; the second end is electrically connected to the drain electrode; The control unit is capable of performing a first operation, a first progress operation, a second operation, and a first determination operation, the first transitional action is performed after the first action; The second action is performed after the first action, the control unit, in the first operation, sets the gate electrode to an on potential and detects a first detection value of a drain potential of the drain electrode in a state in which a current source is electrically connected to the drain electrode, and the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode; the control unit, in the first elapsed operation, sets the gate electrode to an off potential in a state in which the current source is electrically connected to the drain electrode; the control unit, in the second operation, sets the gate electrode to the on potential in a state in which the current source is electrically connected to the drain electrode, and detects a second detection value of the drain potential; The control unit, in the first determination operation, inspects the semiconductor device based on a difference between the first detection value and the second detection value.

2. The inspection apparatus of claim 1 , wherein a first elapsed time period of the first elapsed operation is longer than a second time period of the second operation.

3. The inspection apparatus of claim 2 , wherein the first period of the first operation is longer than the second period of the first operation.

4. The inspection device according to claim 1 , wherein the semiconductor member includes SiC.

5. The control unit is capable of further performing another first process operation after the second operation, 5. The inspection apparatus according to claim 1, wherein the control unit is further capable of performing a second separate action after the first separate process action.

6. the control unit is capable of simultaneously performing at least a portion of the first operation on a plurality of the semiconductor devices; The inspection device according to claim 1 , wherein the control unit is capable of simultaneously performing at least a part of the first process operation for the plurality of semiconductor devices.

7. a drain probe electrically connectable to the drain electrode; a gate probe electrically connectable to the gate electrode; The inspection apparatus of claim 1 further comprising:

8. A control unit capable of being electrically connected to the semiconductor device; A storage unit; Equipped with The semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, The transistor portion and the diode portion are provided on the semiconductor member, the transistor portion includes a source electrode, a drain electrode, and a gate electrode; the diode portion includes a first end and a second end; the first end is electrically connected to the source electrode; the second end is electrically connected to the drain electrode; The control unit is capable of performing a first operation, a first progress operation, a second operation, and a first determination operation, the first transitional action is performed after the first action; The second action is performed after the first action, the control unit, in the first operation, sets the gate electrode to an on potential and detects a first detection value of a drain potential of the drain electrode in a state in which a current source is electrically connected to the drain electrode, and the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode; the control unit, in the first elapsed operation, sets the gate electrode to an off potential in a state in which the current source is electrically connected to the drain electrode; the control unit, in the second operation, sets the gate electrode to the on potential in a state in which the current source is electrically connected to the drain electrode, and detects a second detection value of the drain potential; The control unit, in the first determination operation, inspects the semiconductor device based on a difference between the first detection value and the second detection value.

9. 1. A method for inspecting a semiconductor device, comprising: The semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, The transistor portion and the diode portion are provided on the semiconductor member, the transistor portion includes a source electrode, a drain electrode, and a gate electrode; the diode portion includes a first end and a second end; the first end is electrically connected to the source electrode; the second end is electrically connected to the drain electrode; A first operation, a first progress operation, a second operation, and a first determination operation are performed; the first transitional action is performed after the first action; The second action is performed after the first action, In the first operation, in a state in which a current source is electrically connected to the drain electrode, the gate electrode is set to an on potential, a first detection value of a drain potential of the drain electrode is detected, and the current source supplies a first current to the drain electrode in a direction from the drain electrode to the source electrode; In the first transition operation, the gate electrode is set to an off potential in a state in which the current source is electrically connected to the drain electrode; in the second operation, in a state in which the current source is electrically connected to the drain electrode, the gate electrode is set to the on potential, and a second detection value of the drain potential is detected; In the first determining operation, the semiconductor device is inspected based on a difference between the first detection value and the second detection value.

10. The semiconductor device is manufactured, A method for manufacturing a semiconductor device, comprising carrying out the inspection method according to claim 9 to inspect the semiconductor device.

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