Semiconductor device and method for manufacturing semiconductor device

Abstract

To provide a semiconductor device that can suppress the temperature of the chip from becoming too high.SOLUTION: A semiconductor device of the embodiment has a circuit board having a first surface facing the first side and a second surface facing the second side opposite the first side. It has chips mounted on the first surface. It has a heat transfer component bonded to the second surface via a first bonding layer. It has a heat-dissipating member that is bonded to the second side facing surface of the heat transfer component via the second bonding layer. Each of the first and second bonding layers is a sintered body.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] In a semiconductor device, the amount of heat generated by a chip mounted on a substrate tends to be large. In addition, when the substrate and the heat dissipation member are joined by solder, voids (gaps) tend to form inside the solder, which can increase the thermal resistance between the substrate and the heat dissipation member. In this case, the amount of heat dissipated from the heat dissipation member decreases due to the decrease in the amount of heat transferred from the chip to the heat dissipation member, so there is a risk that the temperature of the chip will become too high. If the temperature of the chip becomes too high, there is a risk that the operation of the semiconductor device will become unstable. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-125477 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor device capable of preventing the chip temperature from becoming too high. [Means for solving the problem]

[0005] The semiconductor device of the embodiment has a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side. The semiconductor device has a chip mounted on the first surface. The semiconductor device has a heat transfer member joined to the second surface via a first bonding layer. The semiconductor device has a heat dissipation member joined to the surface of the heat transfer member facing the second side via a second bonding layer. Each of the first bonding layer and the second bonding layer is a sintered body. [Brief description of the drawings]

[0006] [Figure 1] 1 is a schematic cross-sectional view showing a semiconductor device according to a first embodiment. [Diagram 2] 1 is a schematic cross-sectional view showing a part of a semiconductor device according to a first embodiment. [Diagram 3] 3 is a flowchart showing a method for manufacturing the semiconductor device according to the first embodiment. [Figure 4] 1A to 1C are first schematic cross-sectional views illustrating the method for manufacturing the semiconductor device according to the first embodiment. [Diagram 5] 5A to 5C are second schematic cross-sectional views showing the method for manufacturing the semiconductor device according to the first embodiment. [Figure 6] 5A to 5C are schematic cross-sectional views illustrating a third method for manufacturing the semiconductor device according to the first embodiment. [Figure 7] FIG. 11 is a schematic cross-sectional view showing a part of a semiconductor device according to a second embodiment. [Figure 8] 6 is a flowchart showing a method for manufacturing a semiconductor device according to a second embodiment. [Figure 9] 10A to 10C are first schematic cross-sectional views showing a method for manufacturing a semiconductor device according to a second embodiment. [Figure 10] 5A to 5C are second schematic cross-sectional views showing the method for manufacturing the semiconductor device according to the second embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view showing a part of a semiconductor device according to a third embodiment. [Figure 12] FIG. 13 is a schematic cross-sectional view showing a part of a semiconductor device according to a fourth embodiment. [Figure 13] FIG. 13 is a view of a part of a semiconductor device according to a fourth embodiment, as viewed from a first side. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, a semiconductor device and a method for manufacturing the semiconductor device according to an embodiment will be described with reference to the drawings.

[0008] The Z-axis direction shown in each drawing is the vertical direction. The side where the Z-axis arrow points (+Z side) is the upper side in the vertical direction. The opposite side to the side where the Z-axis arrow points (-Z side) is the lower side in the vertical direction. In the following description, the upper side in the vertical direction is simply called the "upper side" or "first side", and the lower side in the vertical direction is simply called the "lower side" or "second side". The second side is the opposite side to the first side. Note that each of the "upper side" and "lower side" does not indicate a relationship with the direction of gravity. In addition, in the following description, the surface facing the first side among the outer surfaces of each member and each layer constituting the semiconductor device is called the front side, and the surface facing the second side is called the back side.

[0009] (First embodiment) 1 is a schematic cross-sectional view of a semiconductor device 10 according to the present embodiment. The semiconductor device 10 according to the present embodiment is a power semiconductor device such as a metal oxide semiconductor field effect transistor (MOSFET) and an insulated gate bipolar transistor (IGBT). The semiconductor device 10 includes a case 20, a heat dissipation member 31, a main body 32, a terminal portion 50, and a sealing material 60. The semiconductor device 10 does not necessarily have to include the case 20.

[0010] The case 20 accommodates the main body 32, the terminals 50, and the sealing material 60. In this embodiment, the case 20 is made of resin. The case 20 has a peripheral wall 21 and a cover member 22.

[0011] The peripheral wall portion 21 surrounds the main body portion 32, the terminal portion 50, and the sealing material 60. The peripheral wall portion 21 has a tubular shape extending in the vertical direction. In this embodiment, the peripheral wall portion 21 has a rectangular tubular shape. The peripheral wall portion 21 may have other shapes, such as a cylindrical shape or a hexagonal tubular shape. The peripheral wall portion 21 has a first opening 21a that opens to the upper side and a second opening 21b that opens to the lower side.

[0012] The lid member 22 has a plate shape that extends in a direction perpendicular to the vertical direction. In this embodiment, the lid member 22 has a substantially rectangular shape when viewed in the vertical direction. The lid member 22 is fixed to the upper end of the peripheral wall portion 21. The lid member 22 closes the first opening 21a.

[0013] The heat dissipation member 31 is in the form of a plate extending in a direction perpendicular to the vertical direction. The heat dissipation member 31 is fixed to the lower end of the peripheral wall portion 21. The heat dissipation member 31 closes the second opening 21b of the peripheral wall portion 21. The main body portion 32 is joined to the front surface 31a of the heat dissipation member 31. The back surface 31b of the heat dissipation member 31 is exposed to the outside of the semiconductor device 10. In this embodiment, the heat dissipation member 31 is made of metal. The heat dissipation member 31 is made of metal such as copper, aluminum, nickel, silver, and gold. In this embodiment, the heat dissipation member 31 is made of copper. As shown in FIG. 2, the outer surface of the heat dissipation member 31 is covered with a protective film 31d made of nickel. In this embodiment, the protective film 31d is formed by plating. The heat dissipation member 31 may be made of other materials such as a metal-based composite material in which silicon carbide particles are dispersed in an aluminum alloy.

[0014] The main body 32 is an inverter that generates a high-frequency alternating current from a direct current supplied from an external power source (not shown). The main body 32 may be a converter. As shown in FIG. 1, the main body 32 is accommodated inside the case 20. In this embodiment, the semiconductor device 10 has a plurality of main body parts 32. As shown in FIG. 2, the main body 32 includes a circuit board 33, a first bonding layer 37, a heat transfer member 38, a second bonding layer 39, a chip 40, and a wire 41.

[0015] Circuit board 33 extends in a direction perpendicular to the vertical direction. Circuit board 33 is housed inside case 20. Circuit board 33 has first surface 33a and second surface 33b. First surface 33a is the surface of the outer surface of circuit board 33 that faces the first side (+Z side). First surface 33a is the front surface of circuit board 33. Second surface 33b is the surface of the outer surface of circuit board 33 that faces the second side (-Z side). Second surface 33b is the back surface of circuit board 33. Circuit board 33 has an insulating substrate 34, a circuit portion 35, and a conductor portion 36.

[0016] The insulating substrate 34 is in the form of a plate extending in a direction perpendicular to the vertical direction. The insulating substrate 34 has insulating properties. The insulating substrate 34 is a ceramic substrate. The insulating substrate 34 is made of ceramic such as silicon nitride or aluminum nitride.

[0017] The circuit portion 35 is provided on a surface 34a of the insulating substrate 34. The circuit portion 35 is made of metal. In this embodiment, the circuit portion 35 is made of copper. The circuit portion 35 may be made of other metals such as silver and gold. A circuit pattern (not shown) is formed on the circuit portion 35. The surface of the circuit portion 35 is a first surface 33a. In a direction perpendicular to the vertical direction, the dimension of the circuit portion 35 is smaller than the dimension of the insulating substrate 34.

[0018] The conductor portion 36 is provided on the back surface 34b of the insulating substrate 34, that is, the surface facing the second side (-Z side). The conductor portion 36 is made of metal. In this embodiment, the conductor portion 36 is made of copper. The conductor portion 36 may be made of other metals such as silver and gold. The back surface of the conductor portion 36 is the second surface 33b. In a direction perpendicular to the vertical direction, the dimension of the conductor portion 36 is smaller than the dimension of the insulating substrate 34. In a direction perpendicular to the vertical direction, the dimension of the conductor portion 36 is approximately the same as the dimension of the circuit portion 35. In addition, the outer edge of the insulating substrate 34 is located outside the outer edge of the circuit portion 35 and the outer edge of the conductor portion 36. In this embodiment, the insulating substrate 34 can increase the creepage distance between the circuit portion 35 and the conductor portion 36, so that the circuit portion 35 and the conductor portion 36 can be insulated from each other. In addition, the dimension of the conductor portion 36 in the direction perpendicular to the vertical direction may be smaller or larger than the dimension of the circuit portion 35.

[0019] In this embodiment, the thickness of the conductor 36 is approximately the same as the thickness of the circuit section 35. This makes it possible to reduce the difference between the amount of thermal expansion of the conductor 36 and the amount of thermal expansion of the circuit section 35 even if the temperature of the circuit board 33 rises due to heat generated in the chip 40. This makes it possible to suppress an increase in stress applied to the insulating substrate 34 due to the difference between the amount of thermal expansion of the conductor 36 and the amount of thermal expansion of the circuit section 35, thereby suppressing damage to the insulating substrate 34.

[0020] The heat transfer member 38 transfers heat generated in the chip 40 to the heat dissipation member 31. The heat transfer member 38 is in the shape of a plate extending in a direction perpendicular to the vertical direction. The heat transfer member 38 is housed inside the case 20. The heat transfer member 38 is disposed below the circuit board 33. The heat transfer member 38 is joined to the second surface 33b of the circuit board 33 via the first bonding layer 37. The heat transfer member 38 is joined to the conductor portion 36 via the first bonding layer 37. The heat transfer member 38 is made of metal. In this embodiment, the heat transfer member 38 is made of copper. The heat transfer member 38 may be made of other metals such as silver and gold.

[0021] The thickness of the heat transfer member 38 is greater than the thickness of the conductor portion 36. In this embodiment, the thickness of the heat transfer member 38 is greater than the thickness of the circuit board 33. The thickness of the heat transfer member 38 may be the same as the thickness of the circuit board 33, or may be less than the thickness of the circuit board 33. In this embodiment, when viewed from the first side (+Z side), the outer edge of the heat transfer member 38 overlaps with the outer edge of the conductor portion 36. When viewed from the first side, the outer edge of the heat transfer member 38 may surround the outer edge of the conductor portion 36.

[0022] The first bonding layer 37 bonds the circuit board 33 and the heat transfer member 38. More specifically, the first bonding layer 37 bonds the conductor portion 36 and the heat transfer member 38. In this embodiment, the first bonding layer 37 is a sintered body made of copper. The first bonding layer 37 may be a sintered body of other metals such as silver and other materials such as ceramics. The first bonding layer 37 is a copper film formed by applying a copper paste in which copper particles are dispersed in a solvent to at least one of the heat transfer member 38 and the conductor portion 36, and firing the copper paste in a state in contact with both the heat transfer member 38 and the conductor portion 36. The method of applying the copper paste is not particularly limited, and it can be applied by known screen printing and inkjet printing. Alternatively, a copper paste formed in advance in a sheet shape may be used. Since the first bonding layer 37 is a sintered body, it is possible to suppress the formation of voids inside the first bonding layer 37, for example, compared to a case in which the first bonding layer 37 is made of solder. The thickness of first bonding layer 37 is thinner than the thickness of conductor portion 36 and the thickness of heat transfer member 38. From the viewpoint of the bonding strength between circuit board 33 and heat transfer member 38, the thickness of first bonding layer 37 is preferably 10 μm or more. From the viewpoint of the working time for firing first bonding layer 37, the thickness of first bonding layer 37 is preferably 100 μm or less. In this embodiment, the thickness of first bonding layer 37 is about 50 μm.

[0023] The second bonding layer 39 bonds the heat dissipation member 31 and the heat transfer member 38. The heat dissipation member 31 is bonded to the back surface 38b of the heat transfer member 38, i.e., the surface facing the second side (-Z side), via the second bonding layer 39. In this embodiment, the second bonding layer 39 is a sintered body made of silver. The second bonding layer 39 may be a sintered body of other metals such as copper and other materials such as ceramics. The second bonding layer 39 is a silver film formed by applying a silver paste in which silver particles are dispersed in a solvent to at least one of the heat dissipation member 31 and the heat transfer member 38, and firing the silver paste in a state in contact with both the heat dissipation member 31 and the heat transfer member 38. Since the second bonding layer 39 is a sintered body, it is possible to suppress the formation of voids inside the second bonding layer 39, for example, compared to a case in which the second bonding layer 39 is made of solder. The thickness of the second bonding layer 39 is thinner than the thickness of the heat transfer member 38. From the viewpoint of the bonding strength between heat dissipation member 31 and heat transfer member 38, the thickness of second bonding layer 39 is preferably 10 μm or more. From the viewpoint of the working time for firing second bonding layer 39, the thickness of second bonding layer 39 is preferably 100 μm or less. In this embodiment, the thickness of second bonding layer 39 is about 50 μm.

[0024] The chip 40 is mounted on the first surface 33a of the circuit board 33. The chip 40 includes, for example, a power element for power control. When the chip 40 is a MOSFET or a gallium nitride (GaN) device, the drain electrode of the chip 40 is mounted on the circuit board 33 via a mounting material made of solder, sintered material, or the like. When the chip 40 is an IGBT, the collector electrode of the chip 40 is mounted on the circuit board 33 via a mounting material made of solder, sintered material, or the like. The chip 40 is made of, for example, a semiconductor material such as silicon (Si), silicon carbide (SiC), and gallium nitride. The number of chips 40 included in each main body 32 may be one or more. Although not shown in the drawings, in this embodiment, each main body 32 includes a plurality of chips 40. When viewed in the vertical direction, the chip 40 overlaps with each of the circuit board 33, the first bonding layer 37, the heat transfer member 38, the second bonding layer 39, and the heat dissipation member 31. A surface 40a of the chip 40 is provided with a plurality of electrode portions (not shown).

[0025] The wires 41 connect the chip 40 and the circuit section 35. The wires 41 are made of metal such as aluminum and copper. In this embodiment, the wires 41 are made of aluminum. Each main body section 32 includes a plurality of wires 41. One end of each wire 41 is joined to a different electrode section of the chip 40. More specifically, when the chip 40 is a MOSFET or a gallium nitride device, one wire 41 is connected to a source electrode, and the other wire 41 is connected to a gate electrode. When the chip 40 is an IGBT, one wire 41 is connected to an emitter electrode, and the other wire 41 is connected to a gate electrode. The other end of each wire 41 is joined to the circuit section 35. As a result, each wire 41 electrically connects the chip 40 and the circuit board 33.

[0026] The terminal portion 50 electrically connects the circuit board to an external power source (not shown) and an object (not shown). The object is a device to which the current generated by the semiconductor device 10 is supplied, such as a drive device. As shown in FIG. 1, one end of the terminal portion 50 is held by the case 20. One end of the terminal portion 50 is joined to an electrode (not shown) of the peripheral wall portion 21. As shown in FIG. 2, the other end of the terminal portion 50 is joined to the circuit portion 35. As a result, when a current is supplied to the circuit board 33 from an external power source (not shown), the circuit board 33 generates an output current of a predetermined waveform and supplies the output current to the object.

[0027] As shown in FIG. 1, the sealing material 60 covers the main body 32 and the terminal 50. The sealing material 60 covers the circuit board 33, the chip 40, and the wire 41. The sealing material 60 is made of an insulating resin. The sealing material 60 is made of a resin mainly containing, for example, a silicone resin, an epoxy resin, a phenol resin, or an acrylic resin. In this embodiment, the sealing material 60 is made of a silicone resin. According to this embodiment, the sealing material 60 can ensure insulation between the wires 41, insulation between the wires 41 and the terminal 50, and insulation between the multiple electrodes of each chip 40. In addition, the sealing material 60 can protect the main body 32. As a result, the stability of the operation of the semiconductor device 10 can be improved.

[0028] Next, a heat transfer path in which heat generated in the chip 40 is dissipated to the outside of the semiconductor device 10 via the circuit board 33, the heat transfer member 38, and the heat dissipation member 31 will be described. In FIG. 2, the heat transfer path is typically indicated by an arrow H. The heat generated in the chip 40 is transferred downward while spreading in a direction perpendicular to the vertical direction in the circuit board 33, and is transferred to the heat transfer member 38 via the first bonding layer 37. The heat transferred to the heat transfer member 38 is transferred downward while spreading in a direction perpendicular to the vertical direction in the heat transfer member 38, and is transferred to the heat dissipation member 31 via the second bonding layer 39. The heat transferred to the heat dissipation member 31 is transferred downward while spreading in a direction perpendicular to the vertical direction in the heat dissipation member 31, and is dissipated from the rear surface 31b of the heat dissipation member 31 to the outside of the semiconductor device 10. As a result, the heat generated in the chip 40 is dissipated to the outside of the semiconductor device 10.

[0029] As described above, the heat transferred to the heat transfer member 38 is transferred downward while spreading in the heat transfer member 38 in a direction perpendicular to the vertical direction, so that the area A11 of the surface 31a of the heat dissipation member 31 to which heat is transferred from the heat transfer member 38 is larger than the area A12 of the surface 38a of the heat transfer member 38 to which heat is transferred from the circuit board 33. If the semiconductor device 10 does not include the heat transfer member 38, that is, if the heat dissipation member 31 is joined to the circuit board 33, the area of ​​the surface 31a of the heat dissipation member 31 to which heat is transferred from the circuit board 33 is approximately the same as the area A12. Therefore, in this embodiment, by providing the heat transfer member 38 between the circuit board 33 and the heat dissipation member 31, the area A11 to which heat generated in the chip 40 is transferred to the heat dissipation member 31 can be made larger.

[0030] Next, a manufacturing method of the semiconductor device 10 of this embodiment will be described. As shown in FIG. 3, the manufacturing method of the semiconductor device 10 of this embodiment includes a first bonding step S01 in which a second bonding layer 39 is formed by pressure sintering and the heat transfer member 38 and the heat dissipation member 31 are bonded via the second bonding layer 39, a second bonding step S02 in which a first bonding layer 37 is formed by pressureless sintering and the circuit board 33 on which the chip 40 is mounted and the heat transfer member 38 are bonded via the first bonding layer 37, a wiring step S03 in which the terminal portion 50 is bonded to the circuit board 33, and a filling step S04 in which the sealing material 60 is filled inside the peripheral wall portion 21. In the following description, "workers, etc." includes workers who perform each task and assembly equipment, etc. Each task may be performed only by a worker, only by an assembly equipment, or by a worker and an assembly equipment.

[0031] In the first bonding step S01, the second bonding layer 39 is formed by pressure sintering, and the heat transfer member 38 and the heat dissipation member 31 are bonded to each other through the second bonding layer 39. As shown in FIG. 4, in the first bonding step S01, the worker first applies the above-mentioned silver paste to at least one of the heat dissipation member 31 and the heat transfer member 38. Next, the worker brings the front surface 31a of the heat dissipation member 31 into contact with the back surface 38b of the heat transfer member 38 through the silver paste. Next, the worker presses the heat transfer member 38 from above to pressurize the silver paste while performing pressure sintering to sinter the silver paste. When the silver particles contained in the silver paste are bonded to each other to form the second bonding layer 39, which is a sintered body made of silver, the heat transfer member 38 and the heat dissipation member 31 are bonded to each other through the second bonding layer 39. When the second bonding layer 39 is formed, the first bonding step S01 ends.

[0032] In the second bonding step S02, the first bonding layer 37 is formed by pressureless sintering, and the circuit board 33 on which the chip 40 is mounted and the heat transfer member 38 are bonded through the first bonding layer 37. As shown in FIG. 5, in the second bonding step S02, the worker first applies the above-mentioned copper paste to at least one of the heat transfer member 38 and the conductor portion 36. In this embodiment, the circuit portion 35 and the conductor portion 36 are provided on the insulating substrate 34 in a step prior to the second bonding step S02. Furthermore, in a step prior to the second bonding step S02, the chip 40 is mounted on the first surface 33a, and each wire 41 is bonded to the chip 40 and the circuit portion 35. Next, the worker brings the front surface 38a of the heat transfer member 38 into contact with the back surface of the conductor portion 36, i.e., the second surface 33b of the circuit board 33, through the copper paste. Next, the worker performs pressureless sintering to sinter the copper paste without applying pressure to the copper paste. When the copper particles contained in the copper paste are bonded to each other to form a first bonding layer 37 which is a copper sintered body, the circuit board 33 and the heat transfer member 38 are bonded via the first bonding layer 37. More specifically, the conductor 36 and the heat transfer member 38 are bonded via the first bonding layer 37. When the first bonding layer 37 is formed, the second bonding step S02 is completed.

[0033] In the wiring step S03, the terminal portion 50 is joined to the circuit board 33. As shown in FIG. 6, in the wiring step S03, the worker first moves the heat dissipation member 31 to which each main body portion 32 is joined from below to above the peripheral wall portion 21, and inserts each main body portion 32 into the interior of the peripheral wall portion 21 through the second opening 21b. Next, the worker fixes the heat dissipation member 31 to the lower end of the peripheral wall portion 21. Next, the worker joins one end of the terminal portion 50 to an electrode (not shown) of the peripheral wall portion 21, and joins the other end of the terminal portion 50 to the circuit portion 35. When the terminal portion 50 is joined to the circuit board 33, the wiring step S03 is completed.

[0034] In the filling step S04, the sealant 60 is filled into the inside of the peripheral wall portion 21. In the filling step S04, the worker or the like first fills the inside of the peripheral wall portion 21 with the sealant 60 by using a filling device (not shown). The filling device fills the inside of the peripheral wall portion 21 with the gel sealant 60. Next, as shown in FIG. 1, the worker or the like fills the inside of the peripheral wall portion 21 with the gel sealant 60 until it covers the main body portion 32 and the terminal portion 50, and then ends the filling of the gel sealant 60. Next, the worker or the like fixes the lid member 22 to the upper end of the peripheral wall portion 21. Next, the worker or the like hardens the gel sealant 60. When the sealant 60 hardens, the filling step S04 ends. When the filling step S04 ends, the semiconductor device 10 shown in FIG. 1 is manufactured. Note that in the filling step S04, the lid member 22 may be fixed to the upper end of the peripheral wall portion 21 after the gel sealant 60 is hardened.

[0035] According to this embodiment, the semiconductor device 10 includes a circuit board 33 having a first surface 33a facing the first side (+Z side) and a second surface 33b facing the second side (-Z side) opposite to the first side, a chip 40 mounted on the first surface 33a, a heat transfer member 38 bonded to the second surface 33b via a first bonding layer 37, and a heat dissipation member 31 bonded to the back surface 38b of the heat transfer member 38, i.e., the surface facing the second side, via a second bonding layer 39, and each of the first bonding layer 37 and the second bonding layer 39 is a sintered body. Therefore, since the circuit board 33 is bonded to the heat dissipation member 31 via the heat transfer member 38, as described above, the area A11 over which the heat generated in the chip 40 is transferred to the heat dissipation member 31 can be increased. This increases the amount of heat transferred from the chip 40 to the heat dissipation member 31, and therefore increases the amount of heat dissipated from the heat dissipation member 31 to the outside of the semiconductor device 10. This makes it possible to prevent the temperature of the chip 40 from becoming too high, thereby improving the stability of the operation of the semiconductor device 10.

[0036] When the first bonding layer 37 and the second bonding layer 39 are made of solder, the molten solder tends to entrap air during bonding, so that voids are likely to form inside the first bonding layer 37 and the second bonding layer 39. In addition, when the semiconductor device 10 operates, the temperature of the first bonding layer 37 and the second bonding layer 39 repeatedly rises and falls due to heat generated in the chip 40. When the first bonding layer 37 and the second bonding layer 39 are made of solder, the solder tends to become brittle due to repeated thermal expansion and contraction, so that voids are likely to form inside the first bonding layer 37 and the second bonding layer 39. For these reasons, when the first bonding layer 37 and the second bonding layer 39 are made of solder, the thermal resistance of the first bonding layer 37 and the thermal resistance of the second bonding layer 39 tend to be large. In contrast, in this embodiment, since the first bonding layer 37 and the second bonding layer 39 are each a sintered body, the formation of voids inside the first bonding layer 37 and the second bonding layer 39 can be suppressed in the first bonding step S01 and the second bonding step S02. In addition, since the strength of the first bonding layer 37 and the strength of the second bonding layer 39 are higher than the strength of solder, the formation of voids inside the first bonding layer 37 and the second bonding layer 39 can be suppressed even if thermal expansion and thermal contraction are repeated. As a result, the thermal resistance of the first bonding layer 37 and the thermal resistance of the second bonding layer 39 can be suppressed from increasing, and the amount of heat transferred from the chip 40 to the heat dissipation member 31 can be suppressed from decreasing. Therefore, the temperature of the chip 40 can be further suppressed from becoming too high, and the stability of the operation of the semiconductor device 10 can be further improved.

[0037] According to this embodiment, the outer surface of the heat dissipation member 31 is covered with a protective film 31d made of nickel, and the second bonding layer 39 is a sintered body made of silver. Therefore, the bonding strength between the second bonding layer 39 and the protective film 31d can be increased compared to when the second bonding layer 39 is a sintered body made of copper. This makes it possible to suppress an increase in thermal resistance between the second bonding layer 39 and the heat dissipation member 31, and therefore to increase the amount of heat transferred from the chip 40 to the heat dissipation member 31. Therefore, it is possible to more suitably suppress the temperature of the chip 40 from becoming too high, and therefore to more suitably improve the stability of the operation of the semiconductor device 10.

[0038] According to this embodiment, the heat transfer member 38 is made of copper, and the first bonding layer 37 is a sintered body made of copper. Therefore, since the heat transfer member 38 and the first bonding layer 37 are made of the same material, the bonding strength between the heat transfer member 38 and the first bonding layer 37 can be increased. This makes it possible to suppress an increase in thermal resistance between the heat transfer member 38 and the first bonding layer 37, and therefore to increase the amount of heat transferred from the chip 40 to the heat dissipation member 31. Therefore, it is possible to more suitably suppress the temperature of the chip 40 from becoming too high, and therefore to more suitably improve the stability of the operation of the semiconductor device 10.

[0039] Furthermore, in this embodiment, since the heat transfer member 38 and the first bonding layer 37 are made of the same material as described above, even if the first bonding layer 37 is formed by pressureless sintering, it is possible to suppress a decrease in the bonding strength between the heat transfer member 38 and the first bonding layer 37. As a result, even if the first bonding layer 37 is formed by pressureless sintering, it is possible to suppress an increase in the thermal resistance between the heat transfer member 38 and the circuit board 33. Therefore, it is possible to suppress a decrease in the amount of heat transferred from the chip 40 to the heat dissipation member 31, and therefore it is possible to suppress the temperature of the chip 40 from becoming too high.

[0040] According to this embodiment, the circuit board 33 has an insulating substrate 34 having insulating properties, and a copper conductor portion 36 provided on the back surface 34b of the insulating substrate 34, i.e., the surface facing the second side (-Z side), and the conductor portion 36 and the heat transfer member 38 are joined via a first bonding layer 37. Therefore, since the conductor portion 36 and the first bonding layer 37 are made of the same material, the bonding strength between the conductor portion 36 and the first bonding layer 37 can be increased. This makes it possible to suppress an increase in thermal resistance between the conductor portion 36 and the first bonding layer 37, and therefore to increase the amount of heat transferred from the chip 40 to the heat dissipation member 31. Therefore, it is possible to more suitably suppress the temperature of the chip 40 from becoming too high, and therefore to more suitably increase the stability of the operation of the semiconductor device 10.

[0041] Furthermore, in this embodiment, since the conductor 36 and the first bonding layer 37 are made of the same material as described above, even if the first bonding layer 37 is formed by pressureless sintering, it is possible to suppress a decrease in the bonding strength between the conductor 36 and the first bonding layer 37. As a result, even if the first bonding layer 37 is formed by pressureless sintering, it is possible to suppress an increase in the thermal resistance between the heat transfer member 38 and the circuit board 33. Therefore, it is possible to suppress a decrease in the amount of heat transferred from the chip 40 to the heat dissipation member 31, and it is possible to more suitably suppress the temperature of the chip 40 from becoming too high.

[0042] According to this embodiment, the outer edge of the heat transfer member 38 overlaps with the outer edge of the conductor 36 when viewed from the first side (+Z side). Therefore, compared to a case where the outer edge of the heat transfer member 38 is disposed inside the outer edge of the conductor 36 when viewed from the first side, it is easier to prevent the area of ​​the surface 38a of the heat transfer member 38 to which heat is transferred from the conductor 36 from becoming narrow. This makes it possible to prevent a decrease in the amount of heat transferred from the conductor 36 to the heat transfer member 38. Therefore, since it is possible to prevent a decrease in the amount of heat transferred from the chip 40 to the heat dissipation member 31, it is possible to more suitably prevent the temperature of the chip 40 from becoming too high.

[0043] According to this embodiment, the manufacturing method of the semiconductor device 10 includes a first bonding step S01 in which the second bonding layer 39 is formed by pressure sintering and the heat transfer member 38 and the heat dissipation member 31 are bonded to each other through the second bonding layer 39, and a second bonding step S02 in which the first bonding layer 37 is formed by pressureless sintering and the circuit board 33 on which the chip 40 is mounted and the heat transfer member 38 are bonded to each other through the first bonding layer 37. Therefore, since the first bonding layer 37 is formed by pressureless sintering in the second bonding step S02, the first bonding layer 37 can be formed without applying pressure downward to the first surface 33a on which the chip 40 is mounted. Therefore, it is possible to prevent a jig or the like that applies pressure downward to the first surface 33a from interfering with the chip 40 mounted on the first surface 33a and the wire 41 bonded to the first surface 33a. Therefore, it is possible to prevent the chip 40 and the wire 41 from being damaged in the second bonding step S02. Therefore, a decrease in the yield of the semiconductor device 10 can be suppressed, and the stability of the operation of the semiconductor device 10 can be improved.

[0044] Furthermore, in this embodiment, as described above, in the first bonding step S01, the second bonding layer 39 is formed by pressure sintering, so that it is possible to suitably suppress the formation of voids inside the second bonding layer 39. This makes it possible to suppress an increase in the thermal resistance of the second bonding layer 39, and therefore to suppress a decrease in the amount of heat transferred from the chip 40 to the heat dissipation member 31. Therefore, it is possible to suppress the temperature of the chip 40 from becoming too high, and therefore it is possible to improve the stability of the operation of the semiconductor device 10.

[0045] According to this embodiment, the heat transfer member 38 is made of copper, the circuit board 33 has an insulating substrate 34 having insulating properties and a copper conductor portion 36 bonded to the back surface 34b of the insulating substrate 34, i.e., the surface facing the second side (-Z side), and the first bonding layer 37 is a sintered body made of copper, and the conductor portion 36 and the heat transfer member 38 are bonded via the first bonding layer 37. Therefore, since the heat transfer member 38, the conductor portion 36, and the first bonding layer 37 are made of the same material, even if the first bonding layer 37 is formed by pressureless sintering, the bonding strength between the first bonding layer 37 and the heat transfer member 38 and the conductor portion 36 can be increased. As a result, even if the first bonding layer 37 is formed by pressureless sintering, the adhesive strength between the heat transfer member 38 and the circuit board 33 can be increased. Therefore, the amount of heat transferred from the chip 40 to the heat dissipation member 31 can be increased, and the temperature of the chip 40 can be prevented from becoming too high.

[0046] Second embodiment 7 is a schematic cross-sectional view showing a part of a semiconductor device 210 of this embodiment. In the semiconductor device 210 of this embodiment, a first bonding layer 237 is formed by pressure sintering. In the following description, the same components as those in the first embodiment described above are denoted by the same reference numerals, and the description thereof will be omitted.

[0047] The main body 232 of this embodiment includes a circuit board 33, a first bonding layer 237, a heat transfer member 38, a second bonding layer 39, a chip 40, and a wire 41. The first bonding layer 237 bonds the circuit board 33 and the heat transfer member 38. More specifically, the first bonding layer 237 bonds the conductor 36 and the heat transfer member 38. The first bonding layer 237 is a sintered body made of copper. In this embodiment, the thickness of the first bonding layer 237 is about 50 μm. Other configurations of the semiconductor device 210 are similar to those of the semiconductor device 10 of the first embodiment described above.

[0048] Next, a manufacturing method of the semiconductor device 210 of this embodiment will be described. As shown in Fig. 8, the manufacturing method of the semiconductor device 210 of this embodiment includes a first bonding step S21 of forming a second bonding layer 39 by pressure sintering and bonding the heat transfer member 38 and the heat dissipation member 31 through the second bonding layer 39, a second bonding step S22 of forming a first bonding layer 237 by pressure sintering and bonding the circuit board 33 and the heat transfer member 38 through the first bonding layer 237, a mounting step S23 of mounting the chip 40 on the first surface 33a, a wiring step S24 of bonding the terminal portion 50 to the circuit board 33, and a filling step S25 of filling the inside of the peripheral wall portion 21 with the sealing material 60.

[0049] In the first bonding step S21, a second bonding layer 39 is formed by pressure sintering, and the heat transfer member 38 and the heat dissipation member 31 are bonded to each other via the second bonding layer 39. The operations of the first bonding step S21 are similar to those of the first bonding step S01 in the above-described first embodiment.

[0050] In the second bonding process S22, the first bonding layer 237 is formed by pressure sintering, and the circuit board 33 and the heat transfer member 38 are bonded to each other through the first bonding layer 237. As shown in FIG. 9, in the second bonding process S22, the worker first applies the above-mentioned copper paste to at least one of the heat transfer member 38 and the conductor portion 36. In this embodiment, the chip 40 is not mounted on the first surface 33a of the circuit board 33 in the second bonding process S22, and the wires 41 are not bonded to the first surface 33a. Next, the worker brings the front surface 38a of the heat transfer member 38 into contact with the back surface of the conductor portion 36, i.e., the second surface 33b of the circuit board 33, through the copper paste. Next, the worker performs pressure sintering, in which the copper paste is sintered while being pressurized by pressing the circuit board 33 from above. When the copper particles contained in the copper paste are bonded to each other to form the first bonding layer 237, which is a copper sintered body, the circuit board 33 and the heat transfer member 38 are bonded via the first bonding layer 237. When the first bonding layer 237 is formed, the second bonding step S22 is completed.

[0051] In the mounting step S23, the chip 40 is mounted on the first surface 33a. As shown in FIG. 8, the mounting step S23 is a step performed after the second bonding step S22. As shown in FIG. 10, the worker first mounts the chip 40 on the first surface 33a of the circuit board 33. Next, the worker bonds one end of the wires 41 to each of a plurality of electrode parts (not shown) of the chip 40. Next, the worker bonds the other end of each wire 41 to the circuit part 35. As a result, each wire 41 electrically connects the chip 40 and the circuit board 33. When each wire 41 is bonded to the circuit part 35, the mounting step S23 is completed.

[0052] In the wiring step S24, the terminal portion 50 is joined to the circuit board 33. The operations in the wiring step S24 are similar to those in the wiring step S03 in the first embodiment described above. The mounting step S23 may be performed after the wiring step S24. In the filling step S25, the sealant 60 is filled inside the peripheral wall portion 21. The operations in the filling step S25 are similar to those in the filling step S04 in the first embodiment described above. When the filling step S25 is completed, the semiconductor device 210 is manufactured.

[0053] According to this embodiment, the manufacturing method of the semiconductor device 210 includes a first bonding step S21 in which the second bonding layer 39 is formed by pressure sintering and the heat transfer member 38 and the heat dissipation member 31 are bonded through the second bonding layer 39, a second bonding step S22 in which the first bonding layer 237 is formed by pressure sintering and the circuit board 33 and the heat transfer member 38 are bonded through the first bonding layer 237, and a mounting step S23 in which the chip 40 is mounted on the first surface 33a after the second bonding step S22. Therefore, in the second bonding step S22, since the chip 40 is not mounted on the first surface 33a, the first surface 33a can be easily pressed downward. This allows the first bonding layer 237 to be formed by pressure sintering. Furthermore, since the first bonding layer 237 is formed by pressure sintering, the contact areas between the first bonding layer 237 and the second surface 33b and the surface 38a of the heat transfer member 38 can be increased compared to when the first bonding layer 237 is formed by non-pressure sintering. This reduces the thermal resistance between the circuit board 33 and the heat transfer member 38. Therefore, the amount of heat transferred from the chip 40 to the heat dissipation member 31 can be increased, and the temperature of the chip 40 can be more suitably prevented from becoming too high.

[0054] In addition, in this embodiment, since the first bonding layer 237 is formed by pressure sintering as described above, it is possible to suppress the formation of voids inside the first bonding layer 237, compared to the case where the first bonding layer 237 is formed by pressureless sintering. This reduces the thermal resistance of the first bonding layer 237, and therefore the amount of heat transferred from the chip 40 to the heat dissipation member 31 can be further increased. Therefore, it is possible to more suitably suppress the temperature of the chip 40 from becoming too high.

[0055] (Third embodiment) 11 is a schematic cross-sectional view showing a part of a semiconductor device 310 of this embodiment. In the semiconductor device 310 of this embodiment, the outer edge of a heat transfer member 338 surrounds the outer edge of a circuit board 33. In the following description, the same components as those in the first embodiment described above are denoted by the same reference numerals, and the description thereof will be omitted.

[0056] The main body 332 of this embodiment includes a circuit board 33, a first bonding layer 37, a heat transfer member 338, a second bonding layer 339, a chip 40, and a wire 41. The heat transfer member 338 is a plate extending in a direction perpendicular to the vertical direction. The heat transfer member 338 is bonded to the second surface 33b of the circuit board 33 via the first bonding layer 37. The heat transfer member 338 is bonded to the conductor portion 36 via the first bonding layer 37. When viewed from the first side (+Z side), the outer edge of the heat transfer member 338 surrounds the outer edges of the circuit board 33 and the first bonding layer 37. Other configurations of the heat transfer member 338 are similar to those of the heat transfer member 38 of the first embodiment described above.

[0057] The second bonding layer 339 bonds the heat transfer member 338 and the heat dissipation member 31. The second bonding layer 339 is a sintered body made of silver. When viewed from the first side (+Z side), the outer edge of the second bonding layer 339 overlaps with the outer edge of the heat transfer member 338. When viewed from the first side, the outer edge of the second bonding layer 339 surrounds the outer edge of the circuit board 33. Other configurations of the second bonding layer 339 are similar to the other configurations of the second bonding layer 39 of the first embodiment described above. Other configurations of the semiconductor device 310 are similar to the other configurations of the semiconductor device 10 of the first embodiment described above.

[0058] Next, a heat transfer path in which heat generated in the chip 40 is dissipated to the outside of the semiconductor device 310 via the circuit board 33, the heat transfer member 338, and the heat dissipation member 31 will be described. In FIG. 11, the heat transfer path is typically indicated by an arrow H. As described above, the heat transferred from the circuit board 33 to the heat transfer member 338 is transferred downward while spreading in the heat transfer member 338 in a direction perpendicular to the vertical direction, and is transferred to the heat dissipation member 31 via the second bonding layer 39. In this embodiment, as described above, the outer edge of the heat transfer member 338 surrounds the outer edge of the circuit board 33, so that the area of ​​the heat transfer member 338 in the direction perpendicular to the vertical direction can be easily increased. Therefore, the area A21 of the surface 31a of the heat dissipation member 31 to which heat is transferred from the heat transfer member 338 can be made larger than the area A11 of the surface 31a of the heat dissipation member 31 in the first embodiment shown in FIG. 2 to which heat is transferred from the heat transfer member 38. Therefore, in this embodiment, the area A21 over which the heat generated in the chip 40 is transferred to the heat dissipation member 31 can be increased.

[0059] According to this embodiment, the outer edge of the heat transfer member 338 surrounds the outer edge of the circuit board 33 as viewed from the first side (+Z side). Therefore, as compared with a configuration in which the outer edge of the heat transfer member 338 overlaps with the outer edge of the circuit board 33 or is located inside the outer edge of the circuit board 33 as viewed from the first side, the area A21 of the surface 31a of the heat dissipation member 31 to which heat is transferred from the heat transfer member 338 can be made larger as described above. This makes it possible to increase the amount of heat transferred from the heat transfer member 338 to the heat dissipation member 31. Therefore, since the amount of heat transferred from the chip 40 to the heat dissipation member 31 can be increased, it is possible to more suitably prevent the temperature of the chip 40 from becoming too high.

[0060] (Fourth embodiment) 12 is a schematic cross-sectional view showing a part of a semiconductor device 410 of this embodiment. In the semiconductor device 410 of this embodiment, a surface 438a of a heat transfer member 438, i.e., a surface facing a first side (+Z side), is provided with a recess 438c recessed toward a second side (-Z side). In the following description, the same components as those in the third embodiment described above are denoted by the same reference numerals, and description thereof will be omitted.

[0061] The main body 432 of this embodiment includes the circuit board 33, the first bonding layer 37, the heat transfer member 438, the second bonding layer 339, the chip 40, and the wire 41. The heat transfer member 438 is a plate extending in a direction perpendicular to the vertical direction. The heat transfer member 438 is bonded to the second surface 33b of the circuit board 33 via the first bonding layer 37. The heat transfer member 438 is bonded to the conductor portion 36 via the first bonding layer 37. When viewed from the first side (+Z side), the outer edge of the heat transfer member 438 surrounds the outer edges of the circuit board 33 and the first bonding layer 37. The heat transfer member 438 has a recess 438c and a peripheral portion 438g. The heat transfer member 438 is provided with an insulating layer 438h.

[0062] The recess 438c is a hole recessed from the surface 438a of the heat transfer member 438, i.e., the surface facing the first side (+Z side), to the second side (-Z side). That is, the recess 438c is provided in the surface 438a of the heat transfer member 438. As shown in Fig. 13, the recess 438c is a substantially rectangular hole when viewed in the vertical direction. As shown in Fig. 12, the recess 438c has a first inner side surface 438d and a second inner side surface 438e.

[0063] The first inner side surface 438d is a surface facing the first side (+Z side) among the inner sides of the recess 438c. The circuit board 33 is joined to the first inner side surface 438d via the first bonding layer 37. The second surface 33b of the circuit board 33 is disposed inside the recess 438c. The lower portion of the conductor 36 is disposed inside the recess 438c. As described above, the first bonding layer 37 is a sintered body formed by pressureless sintering.

[0064] The second inner side surface 438e is a surface of the inner side surface of the recess 438c that faces a direction perpendicular to the vertical direction. The second inner side surface 438e surrounds the conductor portion 36. The second inner side surface 438e faces the conductor portion 36 in the direction perpendicular to the vertical direction.

[0065] The peripheral portion 438g is a portion of the surface 438a of the heat transfer member 438, i.e., a surface facing the first side (+Z side), surrounding the recess 438c when viewed from the first side. As shown in FIG. 13, the outer edge of the peripheral portion 438g surrounds the outer edge of the circuit board 33. Also, as shown in FIG. 12, the peripheral portion 438g is located closer to the first side than the second surface 33b in the vertical direction. Therefore, the creepage distance between the circuit portion 35 and the peripheral portion 438g is shorter than the creepage distance between the circuit portion 35 and the conductor portion 36.

[0066] The insulating layer 438h is provided on the peripheral portion 438g. The insulating layer 438h has insulating properties. In this embodiment, the insulating layer 438h is made of an insulating resin such as polyimide (PI) and polytetrafluoroethylene (PTFE). Other configurations of the heat transfer member 438 are similar to those of the heat transfer member 338 of the third embodiment described above. Other configurations of the semiconductor device 410 are similar to those of the semiconductor device 310 of the third embodiment described above.

[0067] According to this embodiment, a recess 438c recessed toward the second side (-Z side) is provided on the surface 438a of the heat transfer member 438, i.e., the surface facing the first side (+Z side), and the second surface 33b of the circuit board 33 is disposed inside the recess 438c. If the position of the circuit board 33 with respect to the heat transfer member 438 is significantly shifted in a direction perpendicular to the vertical direction, there is a risk of interference between the chip 40 and the wire 41 and the terminal portion 50. In contrast, in this embodiment, the lower part of the conductor portion 36 of the circuit board 33 is disposed inside the recess 438c. Therefore, the second inner side surface 438e can regulate the position of the circuit board 33 with respect to the heat transfer member 438 in a direction perpendicular to the vertical direction. Therefore, since it is possible to suppress a significant shift in the position of the circuit board 33 with respect to the heat transfer member 438 in a direction perpendicular to the vertical direction, it is possible to suppress interference between the chip 40 and the wire 41 and the terminal portion 50. This can improve the stability of the operation of the semiconductor device 410.

[0068] In addition, in this embodiment, in the second bonding step S02, the first bonding layer 37 is formed by pressureless sintering. Therefore, in the second bonding step S02, since no force is applied to the circuit board 33 pressing against the heat transfer member 38, the position of the circuit board 33 is likely to be significantly shifted relative to the heat transfer member 38 in a direction perpendicular to the vertical direction. In contrast, in this embodiment, as described above, the second inner side surface 438e can regulate the position of the circuit board 33 relative to the heat transfer member 438 in a direction perpendicular to the vertical direction. Therefore, it is possible to suppress a significant shift in the position of the circuit board 33 relative to the heat transfer member 38 in a direction perpendicular to the vertical direction. Therefore, even if the first bonding layer 37 is formed by pressureless sintering, it is possible to suppress interference between the chip 40 and the wire 41 and the terminal portion 50. Therefore, it is possible to improve the stability of the operation of the semiconductor device 410.

[0069] According to the present embodiment, an insulating layer 438h having insulating properties is provided on the peripheral portion 438g surrounding the recess 438c as viewed from the first side of the surface facing the first side (+Z side) of the heat transfer member 438. Therefore, as described above, even if the creepage distance between the circuit portion 35 and the peripheral portion 438g is short, the insulating layer 438h can insulate the circuit portion 35 and the peripheral portion 438g from each other. Therefore, the stability of the operation of the semiconductor device 410 can be more suitably improved.

[0070] According to at least one of the embodiments described above, a semiconductor device can be provided that has a first bonding layer and a second bonding layer that are sintered bodies, thereby preventing the chip temperature from becoming too high.

[0071] The semiconductor device and the method for manufacturing the semiconductor device according to the embodiment include the following additional aspects. (Appendix 1) a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side; A chip mounted on the first surface; a heat transfer member joined to the second surface via a first bonding layer; a heat dissipation member joined to a surface of the heat transfer member facing the second side via a second bonding layer; Equipped with The semiconductor device, wherein the first bonding layer and the second bonding layer are each a sintered body. (Appendix 2) The outer surface of the heat dissipation member is covered with a nickel protective film, The semiconductor device according to claim 1, wherein the second bonding layer is a sintered body made of silver. (Appendix 3) The heat transfer member is made of copper, 3. The semiconductor device according to claim 1, wherein the first bonding layer is a sintered body made of copper. (Appendix 4) the circuit board includes an insulating substrate having insulating properties and a copper conductor portion provided on a surface of the insulating substrate facing the second side, 4. The semiconductor device according to claim 3, wherein the conductor portion and the heat transfer member are joined via the first joining layer. (Appendix 5) the heat transfer member is joined to a conductor portion provided on the circuit board via the first bonding layer, 5. The semiconductor device according to claim 1, wherein, when viewed from the first side, an outer edge of the heat transfer member overlaps with an outer edge of the conductor portion or surrounds the outer edge of the conductor portion. (Appendix 6) 6. The semiconductor device according to claim 1, wherein, when viewed from the first side, an outer edge of the heat transfer member surrounds an outer edge of the circuit board. (Appendix 7) a recessed portion recessed toward the second side is provided on a surface of the heat transfer member facing the first side, 7. The semiconductor device according to claim 1, wherein the second surface of the circuit board is disposed inside the recess. (Appendix 8) The semiconductor device according to claim 7, wherein an insulating layer having insulating properties is provided on a peripheral portion of the surface of the heat transfer member facing the first side, the peripheral portion surrounding the recess as viewed from the first side. (Appendix 9) a case that accommodates the circuit board and the heat transfer member therein; a terminal portion held by the case and connected to the circuit board; a wire connecting the chip and the circuit board; an insulating sealing material that covers the circuit board, the chip, and the wires; 9. The semiconductor device according to claim 1, further comprising: (Appendix 10) a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side; A chip mounted on the first surface; a heat transfer member joined to the second surface via a first bonding layer; a heat dissipation member joined to a surface of the heat transfer member facing the second side via a second bonding layer; A method for manufacturing a semiconductor device comprising: a first bonding step of forming the second bonding layer by pressure sintering and bonding the heat transfer member and the heat dissipation member via the second bonding layer; a second bonding step of forming the first bonding layer by pressureless sintering and bonding the circuit board on which the chip is mounted and the heat transfer member via the first bonding layer; The method for manufacturing a semiconductor device comprising the steps of: (Appendix 11) The heat transfer member is made of copper, the circuit board includes an insulating substrate having insulating properties and a copper conductor portion provided on a surface of the insulating substrate facing the second side, The first bonding layer is a sintered body made of copper, 11. The method for manufacturing a semiconductor device according to claim 10, wherein the conductor portion and the heat transfer member are joined via the first joining layer. (Appendix 12) a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side; A chip mounted on the first surface; a heat transfer member joined to the second surface via a first bonding layer; a heat dissipation member joined to a surface of the heat transfer member facing the second side via a second bonding layer; A method for manufacturing a semiconductor device comprising: a first bonding step of forming the second bonding layer by pressure sintering and bonding the heat transfer member and the heat dissipation member via the second bonding layer; a second bonding step of forming the first bonding layer by pressure sintering and bonding the circuit board and the heat transfer member via the first bonding layer; a mounting step of mounting the chip on the first surface after the second bonding step; The method for manufacturing a semiconductor device comprising the steps of:

[0072] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope of the invention and its equivalents described in the claims, as well as in the scope and spirit of the invention. [Explanation of symbols]

[0073] 10,210,310,410...semiconductor device, 20...case, 31...heat dissipation member, 31d...protective film, 33...circuit board, 33a...first surface, 33b...second surface, 34...insulating substrate, 36...conductor portion, 37,237...first bonding layer, 38,338,438...heat transfer member, 39,339...second bonding layer, 40...chip, 41...wire, 50...terminal portion, 60...sealing material, 438c...recess, 438g...periphery, 438h...insulating layer, S01,S21...first bonding process, S02,S22...second bonding process, S23...mounting process

Claims

1. a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side; A chip mounted on the first surface; a heat transfer member joined to the second surface via a first bonding layer; a heat dissipation member joined to a surface of the heat transfer member facing the second side via a second bonding layer; Equipped with The semiconductor device, wherein the first bonding layer and the second bonding layer are each a sintered body.

2. The outer surface of the heat dissipation member is covered with a nickel protective film, The semiconductor device according to claim 1 , wherein the second bonding layer is a sintered body made of silver.

3. The heat transfer member is made of copper, The semiconductor device according to claim 1 , wherein the first bonding layer is a sintered body made of copper.

4. the circuit board includes an insulating substrate having insulating properties and a copper conductor portion provided on a surface of the insulating substrate facing the second side, The semiconductor device according to claim 3 , wherein the conductor portion and the heat transfer member are joined via the first joining layer.

5. the heat transfer member is joined to a conductor portion provided on the circuit board via the first bonding layer, The semiconductor device according to claim 1 , wherein an outer edge of the heat transfer member overlaps an outer edge of the conductor portion or surrounds an outer edge of the conductor portion when viewed from the first side.

6. The semiconductor device according to claim 1 , wherein an outer edge of the heat transfer member surrounds an outer edge of the circuit board when viewed from the first side.

7. a recessed portion recessed toward the second side is provided on a surface of the heat transfer member facing the first side, The semiconductor device according to claim 1 , wherein the second surface of the circuit board is disposed inside the recess.

8. The semiconductor device according to claim 7 , wherein an insulating layer having insulating properties is provided on a peripheral portion of the surface of the heat transfer member facing the first side, the peripheral portion surrounding the recess as viewed from the first side.

9. a case that accommodates the circuit board and the heat transfer member therein; a terminal portion held by the case and connected to the circuit board; a wire connecting the chip and the circuit board; an insulating sealing material that covers the circuit board, the chip, and the wires; The semiconductor device according to claim 1 , comprising:

10. a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side; A chip mounted on the first surface; a heat transfer member joined to the second surface via a first bonding layer; a heat dissipation member joined to a surface of the heat transfer member facing the second side via a second bonding layer; A method for manufacturing a semiconductor device comprising: a first bonding step of forming the second bonding layer by pressure sintering and bonding the heat transfer member and the heat dissipation member via the second bonding layer; a second bonding step of forming the first bonding layer by pressureless sintering and bonding the circuit board on which the chip is mounted and the heat transfer member via the first bonding layer; The method for manufacturing a semiconductor device comprising the steps of:

11. The heat transfer member is made of copper, the circuit board includes an insulating substrate having insulating properties and a copper conductor portion provided on a surface of the insulating substrate facing the second side, The first bonding layer is a copper sintered body, The method for manufacturing a semiconductor device according to claim 10 , wherein the conductor portion and the heat transfer member are joined via the first joining layer.

12. a circuit board having a first surface facing a first side and a second surface facing a second side opposite the first side; A chip mounted on the first surface; a heat transfer member joined to the second surface via a first bonding layer; a heat dissipation member joined to a surface of the heat transfer member facing the second side via a second bonding layer; A method for manufacturing a semiconductor device comprising: a first bonding step of forming the second bonding layer by pressure sintering and bonding the heat transfer member and the heat dissipation member via the second bonding layer; a second bonding step of forming the first bonding layer by pressure sintering and bonding the circuit board and the heat transfer member via the first bonding layer; a mounting step of mounting the chip on the first surface after the second bonding step; The method for manufacturing a semiconductor device comprising the steps of:

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