Focused ion beam device

Abstract

To provide a focused ion beam device capable of preventing a deposition film from being formed thick on a surface of a specimen.SOLUTION: A focused ion beam device 100 processes a specimen S by irradiating the specimen with ion beams. The focused ion beam device includes: an FIB lens barrel 20 for irradiating the specimen S with ion beams; a nozzle 42 which blows a gas for forming a deposition film from an outlet 41 to the specimen S; a specimen stage 30 on which the specimen S is supported; a shield member 60 for disturbing a flow of the gas; and a shield member support mechanism 70 supporting the shield member 60 movably between a shield position, which is located between the outlet 41 and the specimen S supported on the specimen stage 30, and a shield member retraction position which is not located between the outlet 41 and the specimen S supported on the specimen stage 30.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a focused ion beam device. [Background technology]

[0002] In a focused ion beam device, a sample can be processed by scanning the sample surface with a focused ion beam. In addition, in a focused ion beam device, a deposition film can be formed on the sample surface by irradiating the sample with an electron beam or ion beam while spraying a compound gas near the sample surface. In a cryo-focused ion beam device (Cryo-FIB), which processes cooled samples, a deposition film can be formed on the sample surface by simply spraying a compound gas on the sample without irradiating it with an electron beam or ion beam.

[0003] Patent Document 1 discloses a focused ion beam device equipped with a gas gun for spraying a compound gas onto a sample. The gas gun includes a gas tank that houses a gas source, and a gas nozzle. When forming a deposition film, the gas nozzle is moved from a retreated position by an air cylinder to approach a height of several hundred μm from the processing point of the sample. A gas sealing plug is provided in the gas tank, and gas can be sprayed onto the sample by opening the gas sealing plug. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2007-134520 A Summary of the Invention [Problem to be solved by the invention]

[0005] In the above-mentioned gas gun, even if the gas tank is closed with a gas seal plug, gas remains in the gas nozzle and leaks out from the gas nozzle. This causes the gas leaking from the gas nozzle to reach the sample surface, and may unintentionally form a deposition film on the sample surface that is so thick that it may affect observation and analysis using an electron microscope. [Means for solving the problem]

[0006] One aspect of the focused ion beam device according to the present invention is 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowing port; A sample stage for supporting the sample; a blocking member for impeding the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported by the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported by the sample stage; and Includes.

[0007] In such a focused ion beam device, when the nozzle is not used, a shielding member can be placed between the nozzle and the sample. Therefore, in such a focused ion beam device, the amount of gas leaking from the nozzle and reaching the sample can be reduced. This makes it possible to prevent a deposition film that is so thick that it affects observation and analysis by an electron microscope from being formed on the sample surface.

[0008] One aspect of the focused ion beam device according to the present invention is 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowing port; A sample stage for supporting the sample; a switching mechanism for switching between a film-forming state in which the air outlet faces the sample and a retracted state in which the air outlet does not face the sample; Includes.

[0009] In such a focused ion beam device, when the nozzle is not in use, the nozzle can be retracted so that the nozzle does not face the sample. Therefore, in such a focused ion beam device, the amount of gas leaking from the nozzle and reaching the sample can be reduced. This makes it possible to prevent a deposition film that is so thick that it affects observation and analysis by an electron microscope from being formed on the surface of the sample. [Brief description of the drawings]

[0010] [Figure 1] 1 is a diagram showing the configuration of a focused ion beam apparatus according to a first embodiment. [Diagram 2] FIG. 1 is a cross-sectional view illustrating a gas injection device. [Diagram 3] FIG. 1 is a cross-sectional view illustrating a gas injection device. [Figure 4] FIG. 2 is a diagram for explaining the operation of the focused ion beam device. [Diagram 5] FIG. 2 is a diagram for explaining the operation of the focused ion beam device. [Figure 6] FIG. 2 is a cross-sectional view showing a schematic diagram of the gas injection device when the valve is closed. [Figure 7] FIG. 4 is a diagram showing a modified example of the focused ion beam apparatus according to the first embodiment. [Figure 8] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a second embodiment. [Figure 9] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a second embodiment. [Figure 10] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a third embodiment. [Figure 11] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a third embodiment. [Figure 12] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a fourth embodiment. [Figure 13] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a fourth embodiment. [Figure 14] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a fifth embodiment. [Figure 15] FIG. 13 is a diagram showing the configuration of a focused ion beam apparatus according to a fifth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the contents of the present invention described in the claims. Also, not all of the configurations described below are necessarily essential components of the present invention.

[0012] 1. First embodiment 1.1. Focused ion beam device First, a focused ion beam apparatus according to a first embodiment will be described with reference to the drawings. Fig. 1 is a diagram showing the configuration of a focused ion beam apparatus 100 according to the first embodiment.

[0013] 1, the focused ion beam device 100 includes a SEM (scanning electron microscope) column 10, a FIB (focused ion beam) column 20, a sample stage 30, a cooling mechanism 32, a gas injection device 40 including a nozzle 42, a nozzle support mechanism 50, a shielding member 60, a shielding member support mechanism 70, and a control unit 80. The focused ion beam device 100 includes the SEM column 10 and the FIB column 20, and is capable of processing a sample S and observing the sample S.

[0014] The SEM column 10 irradiates an electron beam onto a sample S. The SEM column 10 forms an electron probe and performs scanning with the electron probe. The SEM column 10 is an electron The SEM includes an electron gun and an electron optical system for focusing the electron beam to form an electron probe and scanning the formed electron probe. The electron beam emitted from the electron gun travels along an optical axis AS of the SEM column 10 and is irradiated onto a sample S.

[0015] In the focused ion beam device 100, a SEM image can be obtained by scanning the sample S with an electron probe and detecting electrons emitted from the sample S with an electron detector (not shown).

[0016] The FIB column 20 irradiates the sample S with an ion beam. The FIB column 20 forms an ion beam and scans the ion beam. The FIB column 20 includes an ion gun that emits the ion beam, and an ion optical system that focuses the ion beam and scans the focused ion beam. The ion beam emitted from the ion gun travels along the optical axis AF of the FIB column 20 and is irradiated onto the sample S. In the focused ion beam device 100, the sample S can be processed by scanning the sample S with the focused ion beam.

[0017] The sample stage 30 supports a sample S. The sample S supported by the sample stage 30 is placed in a sample chamber 102. The sample chamber 102 is evacuated by a vacuum pump (not shown) and is in a vacuum state (reduced pressure state). In the focused ion beam device 100, processing of the sample S and observation of the sample S are performed at an intersection P0 between an optical axis AS and an optical axis AF.

[0018] The sample stage 30 includes a moving mechanism for moving the sample S in the horizontal and vertical directions and a tilting mechanism for tilting the sample S. The moving mechanism and the tilting mechanism are driven by a driving device such as a motor. The sample stage 30 may be configured to be capable of supporting a sample holder that can be used in both the focused ion beam device 100 and the transmission electron microscope. That is, the sample stage 30 may support the sample S via a sample holder that can be used in both the focused ion beam device and the transmission electron microscope.

[0019] The cooling mechanism 32 cools the sample stage 30. By cooling the sample stage 30, the sample S can be cooled. The cooling mechanism 32 includes, for example, a tube for flowing gas and a coolant tank for cooling the gas. The cooling mechanism 32 cools the sample stage 30 by flowing gas cooled in a coolant tank filled with liquid nitrogen, for example, through a tube thermally connected to the sample stage 30. In addition, for example, the cooling mechanism 32 may include a coolant tank and a heat conductive wire that thermally connects the coolant tank and the sample stage 30. By connecting the coolant tank and the sample stage 30 with a heat conductive wire, the sample stage 30 can be cooled.

[0020] In this way, the focused ion beam device 100 includes a cooling mechanism 32 that cools the sample stage 30, and can be used as a cryo-FIB that can process the sample S while cooling it. Therefore, the focused ion beam device 100 can process and observe frozen biological samples, battery materials, and the like.

[0021] The gas injection device 40 sprays gas for forming a deposition film onto the sample S. When forming a deposition film on the sample S at room temperature, the gas injection device 40 irradiates the sample S with an electron beam or ion beam while spraying gas onto the sample S. Secondary electrons generated in the sample S by irradiation with the electron beam or ion beam break down the gas into a deposition material and gas components. This allows the deposition material to adhere to the sample S, and a deposition film can be formed on the sample S. Also, when forming a deposition film on a cooled sample S, the sample S is sprayed with gas without irradiating it with an electron beam or ion beam. The gas adheres to the surface of the cooled sample S. This allows a deposition film to be formed.

[0022] The gas injection device 40 includes a nozzle 42 and a reservoir tank 44. A gas source is contained in the reservoir tank 44. The reservoir tank 44 is disposed outside the sample chamber 102. The nozzle 42 is a thin and long cylindrical member, and sprays gas onto the sample S from an outlet 41 at the tip. When spraying gas onto the sample S, the outlet 41 is positioned near the sample S by a nozzle support mechanism 50.

[0023] The nozzle support mechanism 50 movably supports the nozzle 42. The nozzle support mechanism 50 movably supports the entire gas injection device 40 including the nozzle 42 and the reservoir tank 44. The nozzle support mechanism 50 may movably support only the nozzle 42. The nozzle support mechanism 50 is, for example, a single-axis actuator including a drive device such as a motor or an air cylinder, and a power transmission member such as a linear guide that connects the drive device and the nozzle 42. The configuration of the nozzle support mechanism 50 is not particularly limited as long as it can movably support the nozzle 42.

[0024] The shielding member 60 is a member for preventing the flow of gas. The shielding member 60 is, for example, a plate-shaped member. By disposing the shielding member 60 between the blowing port 41 and the sample S, it is possible to prevent the flow of gas leaking from the nozzle 42 toward the sample S. Note that the shape and material of the shielding member 60 are not particularly limited as long as they can prevent the flow of gas.

[0025] The shielding member support mechanism 70 movably supports the shielding member 60. The shielding member support mechanism 70 is, for example, a single-axis actuator including a driving device such as a motor or an air cylinder, and a power transmission member such as a linear guide that connects the driving device and the nozzle 42. Note that the configuration of the shielding member support mechanism 70 is not particularly limited as long as it can movably support the shielding member 60.

[0026] The control unit 80 controls the nozzle support mechanism 50 and the shielding member support mechanism 70. The control unit 80 includes a processor such as a CPU (Central Processing Unit) or a DSP (Digital Signal Processor), and a storage device (memory) such as a RAM (Random Access Memory) and a ROM (Read Only Memory). The storage device stores programs and data for performing various controls. The functions of the control unit 80 can be realized by executing the programs in the processor. The control unit 80 includes an input device that functions as a user interface for receiving instructions from a user.

[0027] 1.2. Gas injection device 2 and 3 are cross-sectional views that typically show a gas injection device 40. As shown in Fig. 2 and Fig. 3, the gas injection device 40 includes a nozzle 42, a reservoir tank 44, and a valve 46. Fig. 2 illustrates the valve 46 in an open state, and Fig. 3 illustrates the valve 46 in a closed state.

[0028] A liquid or solid gas source 4 is contained in the reservoir tank 44. For example, a carbon compound, a tungsten compound, a platinum compound, or the like is used as the gas source 4. The gas 2 generated from the gas source 4 is supplied from the reservoir tank 44 through a valve 46 to the nozzle 42.

[0029] A valve 46 is provided between the nozzle 42 and the reservoir tank 44. The gas 2 can be sprayed from the nozzle 42 by opening the valve 46, and the gas 2 can be stopped by closing the valve 46.

[0030] The nozzle 42 is connected to a reservoir tank 44 via a valve 46. The nozzle 42 is a cylindrical member that blows the gas 2 from an outlet 41 onto the sample S. In the focused ion beam device 100, the reservoir tank 44 is connected to the nozzle 42 by using a thin and long nozzle 42. It can be placed at a position away from the sample S.

[0031] 1.3. Operation 1.3.1. Nozzle and shield operation Figures 4 and 5 are diagrams for explaining the operation of the focused ion beam device 100. The nozzle 42 is movable between a film forming position shown in Figure 4 and a nozzle retracted position shown in Figure 5. The shielding member 60 is movable between a shielding member retracted position shown in Figure 4 and a shielding position shown in Figure 5.

[0032] The control unit 80 changes the position of the shielding member 60 depending on the position of the nozzle 42. Specifically, when the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position to the shielding position. In addition, when the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position to the film formation position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding position to the shielding member retracted position.

[0033] Therefore, in the focused ion beam device 100, when the nozzle 42 is moved from the film formation position to the nozzle retraction position, the shielding member 60 automatically moves from the shielding member retraction position to the shielding position. Also, in the focused ion beam device 100, when the nozzle 42 is moved from the nozzle retraction position to the film formation position, the shielding member 60 automatically moves from the shielding position to the shielding member retraction position. The operation of the focused ion beam device 100 will be described in detail below.

[0034] 1.3.2. Deposition of the deposition film 4, when a deposition film is formed using a gas injection device 40, a nozzle 42 is placed at a film formation position where a gas 2 can be sprayed from an outlet 41 onto a sample S. By placing the nozzle 42 at the film formation position, the outlet 41 is placed near the sample S. For example, when the nozzle 42 is placed at the film formation position, the distance between the outlet 41 and the surface of the sample S is about several tens of μm to several hundreds of μm.

[0035] When the nozzle 42 is placed in the film formation position, the shielding member 60 is placed in the shielding member retracted position. The shielding member retracted position is a position that is not between the blow-out port 41 and the sample S. When the shielding member 60 is placed in the shielding member retracted position, the shielding member 60 does not intersect with the line segment L that connects the center of the blow-out port 41 and the intersection point P0. Therefore, by placing the shielding member 60 in the shielding member retracted position, the shielding member 60 does not obstruct the flow of the gas 2 blown out from the blow-out port 41.

[0036] 2, when the nozzle 42 is located at the film formation position, the valve 46 is opened to blow the gas 2 from the blowing port 41. This allows the gas 2 to be blown onto the surface of the sample S, and a deposition film can be formed on the surface of the sample S. As shown in FIG 3, when the valve 46 is closed, the supply of the gas 2 from the reservoir tank 44 to the nozzle 42 is stopped.

[0037] 1.3.3. Nozzle retraction When retracting the nozzle 42 after forming the deposition film, the user instructs the control unit 80 to retract the nozzle 42. Upon receiving the instruction to retract the nozzle 42, the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position shown in Fig. 4 to the nozzle retraction position shown in Fig. 5. The nozzle support mechanism 50 moves the nozzle 42 linearly from the film formation position to the nozzle retraction position.

[0038] The nozzle retraction position is a position where the nozzle 42 is sufficiently separated from the sample S. The distance between the blow-out port 41 and the sample S at the nozzle retraction position is greater than the distance between the blow-out port 41 and the sample S at the film formation position. By disposing the nozzle 42 at the nozzle retraction position, It allows for effective use of nearby space.

[0039] The control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position, and then causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position shown in FIG. 4 to the shielding position shown in FIG. 5.

[0040] The shielding position is a position between the air outlet 41 and the sample S supported by the sample stage 30. When the shielding member 60 is placed at the shielding position, the shielding member 60 intersects with a line segment L that connects the center of the air outlet 41 and the intersection point P0.

[0041] FIG. 6 is a cross-sectional view that illustrates the gas injection device 40 when the valve 46 is closed after the gas 2 is sprayed onto the sample S.

[0042] As shown in FIG. 6, since the nozzle 42 is thin and long, the gas 2 remains in the nozzle 42 even when the valve 46 is closed. If the remaining gas 2 leaks from the nozzle 42 and reaches the surface of the sample S, a deposition film is unintentionally formed on the surface of the sample S. In particular, since the deposition film is formed without irradiating an electron beam or an ion beam in the cryo-FIB, the gas 2 leaking from the nozzle 42 may form a thick deposition film on the surface of the sample S so as to affect observation and analysis by an electron microscope. Even if the sample S is at room temperature, a thick deposition film may be formed on the surface of the sample S depending on the type of gas 2.

[0043] In the focused ion beam device 100, as described above, when the nozzle 42 is moved to the nozzle retracted position, the shielding member 60 is moved to the shielding position. Therefore, the shielding member 60 can block the flow of the gas 2 leaking from the nozzle 42 toward the sample S.

[0044] Here, the degree of vacuum in the sample chamber 102 is 10 -5 Pa~10 -6The molecular flow region is about 10 Pa. In the molecular flow region, the gas molecules fly almost straight. Therefore, the gas molecules that fly out of the outlet 41 and collide with the shielding member 60 are scattered in the sample chamber 102 without going around the shielding member 60. Therefore, by disposing the shielding member 60 between the outlet 41 and the sample S, the gas molecules heading toward the sample S from the outlet 41 are almost eliminated. After colliding with the shielding member 60, there are also gas molecules that collide with the wall of the sample chamber 102 and reach the sample S, but the number of such gas molecules is extremely small. Therefore, in the focused ion beam device 100, the amount of gas that leaks from the nozzle 42 and reaches the sample S can be reduced. This makes it possible to prevent a deposition film from being formed on the surface of the sample S so thick that it affects observation and analysis by an electron microscope.

[0045] 1.3.4. Inserting the nozzle When inserting the nozzle 42 to form a deposition film on the sample S, the user instructs the control unit 80 to insert the nozzle 42. Upon receiving the instruction to insert the nozzle 42, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding position shown in Fig. 5 to the shielding member retracted position shown in Fig. 4. After causing the shielding member support mechanism 70 to move the shielding member 60 from the shielding position to the shielding member retracted position, the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position shown in Fig. 5 to the film formation position shown in Fig. 4. This makes it possible to form a deposition film.

[0046] 1.4. Effects The focused ion beam device 100 includes an FIB column 20 for irradiating a sample S with an ion beam, a nozzle 42 for blowing a gas 2 for forming a deposition film onto the sample S from a blowing port 41, a sample stage 30 for supporting the sample S, and a shielding member for preventing the flow of the gas 2. The apparatus includes a shielding member 60 and a shielding member support mechanism 70 that movably supports the shielding member 60 between a shielding position between the air outlet 41 and the sample S supported by the sample stage 30 and a shielding member retracted position that is not located between the air outlet 41 and the sample S supported by the sample stage 30.

[0047] Therefore, in the focused ion beam device 100, when the nozzle 42 is not used, the shielding member 60 can be disposed between the blowing port 41 and the sample S. This can reduce the amount of gas leaking from the nozzle 42 and reaching the sample S. Therefore, in the focused ion beam device 100, it is possible to prevent a deposition film from being unintentionally formed on the surface of the sample S so thick that it affects observation and analysis by an electron microscope.

[0048] The focused ion beam device 100 includes a nozzle support mechanism 50 that supports the nozzle 42 movably between a film formation position where the gas 2 is sprayed from the blowing port 41 onto the sample S and a nozzle retracted position different from the film formation position, and a control unit 80 that controls the nozzle support mechanism 50 and the shielding member support mechanism 70. When the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retracted position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retracted position to the shielding position. Therefore, in the focused ion beam device 100, when the nozzle 42 is moved from the film formation position to the nozzle retracted position, the shielding member 60 automatically moves from the shielding member retracted position to the shielding position. Therefore, in the focused ion beam device 100, it is possible to prevent a thick deposition film from being formed on the surface of the sample S without the user being aware of it.

[0049] In the focused ion beam device 100, when the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retraction position to the film formation position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding position to the shielding member retraction position. Therefore, in the focused ion beam device 100, when the nozzle 42 is moved from the nozzle retraction position to the film formation position, the shielding member 60 automatically moves from the shielding position to the shielding member retraction position. Therefore, in the focused ion beam device 100, it is possible to prevent a deposition film from being formed thickly on the surface of the sample S without the user being aware of it.

[0050] The focused ion beam device 100 includes a cooling mechanism 32 that cools the sample stage 30. In the focused ion beam device 100, when the nozzle 42 is not used, the shielding member 60 can be disposed between the blowing port 41 and the sample S. Therefore, in the focused ion beam device 100, even in the case of cryo-FIB that cools and processes the sample S, it is possible to prevent a deposition film from being unintentionally formed thickly on the surface of the sample S.

[0051] The focused ion beam device 100 includes a reservoir tank 44 that contains a gas source 4 that generates a gas 2, and a valve 46 that is provided between the nozzle 42 and the reservoir tank 44. By opening the valve 46, the gas 2 is supplied from the reservoir tank 44 to the nozzle 42. In the focused ion beam device 100, when the nozzle 42 is not used, a shielding member 60 is disposed between the outlet 41 and the sample S, so that when the valve 46 is closed, the amount of gas that leaks from the nozzle 42 and reaches the sample S can be reduced.

[0052] 1.5. Variations 1.5.1. First variant In the above-described first embodiment, the control unit 80 controls the shielding member support mechanism 70 to change the position of the shielding member 60 in accordance with the position of the nozzle 42, but the processing of the control unit 80 is not limited to this. For example, the control unit 80 may control the shielding member support mechanism 70 to change the position of the shielding member 60 in accordance with an instruction from a user. That is, when the control unit 80 receives an instruction from a user to move the shielding member 60 to the shielding position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 to the shielding position. In addition, the control unit 80 may control the shielding member 60 to be moved to the shielding position by the shielding member When an instruction to move to the retracted position is received from the user, the shielding member support mechanism 70 is caused to move the shielding member 60 to the retracted position.

[0053] 1.5.2. Second variant In the above-described first embodiment, the control unit 80 controls the shielding member support mechanism 70 to change the position of the shielding member 60, but the user may manually operate the shielding member support mechanism 70 to change the position of the shielding member 60. In this case, the shielding member support mechanism 70 may not have a drive device, for example, and the user may manually move the shielding member 60 via a mechanical element such as a shaft connected to the shielding member 60.

[0054] Similarly, in the first embodiment described above, the control unit 80 controls the nozzle support mechanism 50 to change the position of the nozzle 42, but the user may manually operate the nozzle support mechanism 50 to change the position of the nozzle 42. In this case, the nozzle support mechanism 50 may not have a drive device, for example, and the user may manually move the nozzle 42 via a mechanical element such as a shaft connected to the nozzle 42.

[0055] 1.5.3. Third variant Fig. 7 is a diagram showing a modified example of the focused ion beam device 100. As shown in Fig. 7, the focused ion beam device 100 includes a detector 90 that detects electrons emitted from the sample S by irradiating the sample S with an electron beam. In the focused ion beam device 100 according to the third modified example, the shielding member 60 is connected to the detector 90.

[0056] The detector 90 is, for example, a backscattered electron detector that detects backscattered electrons emitted from the sample S. In the focused ion beam device 100, the SEM column 10 scans the sample S with an electron probe, and the detector 90 detects the backscattered electrons emitted from the sample S, thereby obtaining a backscattered electron image.

[0057] The shielding member support mechanism 70 movably supports the shielding member 60 and the detector 90. That is, the shielding member support mechanism 70 also functions as a detector support mechanism that movably supports the detector 90. In this way, since the shielding member support mechanism 70 also functions as a detector support mechanism, the number of parts can be reduced. When the detector 90 detects reflected electrons, the shielding member support mechanism 70 moves the detector 90 to immediately below the SEM lens barrel 10 that can detect reflected electrons. When the detector 90 does not detect reflected electrons, the shielding member support mechanism 70 moves the detector 90 to a detector retract position shown in FIG. 7. The detector retract position is set to a position away from the sample S.

[0058] The detector 90 to which the shielding member 60 is connected is not limited to a reflected electron detector, and may be any detector that detects a signal emitted from the sample S. For example, the detector 90 may be an X-ray detector that detects characteristic X-rays emitted from the sample S, or an EBSD detector for acquiring EBSD (Electron Backscatter Diffraction).

[0059] Furthermore, the member to which the shielding member 60 is connected is not limited to a detector, and may be another member disposed in the sample chamber 102. The shielding member 60 may be connected, for example, to a manipulator for picking up a sample piece cut out from the sample S. The shielding member support mechanism 70 may movably support the shielding member 60 and the manipulator.

[0060] 1.5.4. Fourth variant In the above-described first embodiment, the control unit 80 operates the shielding member support mechanism 70 in response to the operation of the nozzle support mechanism 50, but the shielding member support mechanism 70 may be configured so that the operation of the shielding member support mechanism 70 is mechanically linked to the operation of the nozzle support mechanism 50. That is, When the nozzle support mechanism 50 moves the nozzle 42 from the film formation position to the nozzle retracted position, the shielding member support mechanism 70 may move the shielding member 60 from the shielding member retracted position to the shielding position in mechanical interlocking with the operation of the nozzle support mechanism 50. Similarly, when the nozzle support mechanism 50 moves the nozzle 42 from the nozzle retracted position to the film formation position, the shielding member support mechanism 70 may move the shielding member 60 from the shielding position to the shielding member retracted position in mechanical interlocking with the operation of the nozzle support mechanism 50.

[0061] In this way, the shielding member support mechanism 70 mechanically links with the movement of the nozzle 42 to move the shielding member 60 between the shielding position and the shielding member retracted position, thereby preventing a thick deposition film from being formed on the surface of the sample S without the user being aware of it.

[0062] 2. Second embodiment 2.1. Focused ion beam device Next, a focused ion beam device according to a second embodiment will be described with reference to the drawings. Figures 8 and 9 are diagrams showing the configuration of a focused ion beam device 200 according to the second embodiment. Note that Figures 8 and 9 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam device 200 according to the second embodiment, components having the same functions as those of the focused ion beam device 100 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0063] In the focused ion beam device 200, as shown in FIGS. 8 and 9, the shielding member 60 is a plate-shaped lid that closes the blowing port 41 of the nozzle .

[0064] The shielding member support mechanism 70 includes a support member 72 that supports the shielding member 60, a shaft member 73 that rotatably connects the shielding member 60 to the support member 72, and a drive device 74 that rotates the shielding member 60 around the shaft member 73. In the shielding member support mechanism 70, the drive device 74 rotates the shielding member 60 around the shaft member 73, so that the shielding member 60 can be moved between the shielding position shown in Fig. 9 and the shielding member retracted position shown in Fig. 8.

[0065] As shown in Fig. 8, by placing the shielding member 60 in the shielding member retracted position, it is possible to open the lid made of the shielding member 60 that covers the air outlet 41. Also, as shown in Fig. 9, by placing the shielding member 60 in the shielding position, it is possible to cover the air outlet 41.

[0066] Here, the nozzle 42 is supported by a nozzle support mechanism 50, and the shielding member 60 is supported by a shielding member support mechanism 70. In this manner, since the nozzle 42 and the shielding member 60 are supported by separate members, even if the nozzle 42 is moved to the film formation position, the shielding member 60 can be placed at a shielding member retracted position away from the sample S. Therefore, in the focused ion beam device 200, the space near the sample S can be effectively utilized.

[0067] 2.2. Operation 2.2.1. Nozzle and shield operation In the following, the operation of the focused ion beam device 200 will be described focusing on the differences from the operation of the focused ion beam device 100 described above, and a description of the similarities will be omitted.

[0068] 2.2.2. Deposition of the deposition film 8, when a deposition film is formed using the gas injection device 40, the nozzle 42 is placed at a film formation position where the gas 2 is sprayed onto the sample S from the blowing port 41. With the nozzle 42 at the film formation position, a deposition film can be formed on the surface of the sample S by opening the valve 46 as shown in FIG. 2. At this time, since the shielding member 60 is placed at the shielding member retracted position, the shielding member 60 that blocks the blowing port 41 is in an open state, The shielding member 60 does not impede the flow of the gas 2 blown out from the blowout port 41 .

[0069] 2.2.3. Nozzle retraction 9, the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retraction position. After the control unit 80 causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retraction position, the control unit 80 causes the shielding member support mechanism 70 to move the shielding member 60 from the shielding member retraction position to the shielding position. This allows the shielding member 60 to cover the blowing port 41. This makes it possible to prevent the flow of the gas 2 leaking from the nozzle 42 toward the sample S.

[0070] 2.3. Effects In the focused ion beam device 200, similarly to the focused ion beam device 100 described above, when the nozzle 42 is not used, the shielding member 60 can be disposed between the blowing port 41 and the sample S. Therefore, in the focused ion beam device 200, it is possible to prevent a deposition film from being unintentionally formed on the surface of the sample S so thick that it affects observation and analysis by an electron microscope.

[0071] 2.4. Variations In the second embodiment described above, the control unit 80 operated the shielding member support mechanism 70 in accordance with the operation of the nozzle support mechanism 50. However, as in the fourth modified example of the first embodiment described above, the shielding member support mechanism 70 may be configured so that the operation of the shielding member support mechanism 70 is mechanically linked to the operation of the nozzle support mechanism 50.

[0072] For example, the shielding member support mechanism 70 may include a biasing member such as a spring that biases the shielding member 60 so as to maintain the state in which the shielding member 60 is positioned at the shielding position. When the nozzle 42 is moved from the nozzle retracted position to the film formation position, the shielding member 60 is moved from the shielding position to the shielding member retracted position by pushing the shielding member 60 with the tip of the nozzle 42, and the cover that protects the blowing outlet 41 is opened. When the nozzle 42 is moved from the film formation position to the nozzle retracted position, the shielding member 60 is biased by the biasing member to return from the shielding member retracted position to the shielding position, and the blowing outlet 41 can be covered.

[0073] The above-described first and second modifications of the first embodiment are also applicable to the focused ion beam device 200 according to the above-described second embodiment.

[0074] 3. Third embodiment 3.1. Focused ion beam device Next, a focused ion beam device according to a third embodiment will be described with reference to the drawings. Figures 10 and 11 are diagrams showing the configuration of a focused ion beam device 300 according to the third embodiment. Note that Figures 10 and 11 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam device 300 according to the third embodiment, components having the same functions as those of the focused ion beam device 100 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0075] In the above-described focused ion beam device 100, as shown in FIG. 5, a shielding member 60 is disposed between the blow-out port 41 and the sample S, thereby reducing the amount of gas 2 leaking from the nozzle 42 and reaching the sample S.

[0076] In contrast, in the focused ion beam device 300, as shown in Figures 10 and 11, the nozzle 42 is moved so that the direction of the outlet 41 faces away from the sample S, thereby reducing the amount of gas 2 leaking from the nozzle 42 and reaching the sample S.

[0077] The nozzle support mechanism 50 moves the nozzle 42 between the film formation position and the nozzle retracted position, thereby switching between a film formation state in which the blow-out port 41 faces the sample S as shown in Fig. 10 and a retracted state in which the blow-out port 41 does not face the sample S as shown in Fig. 11. In this way, the nozzle support mechanism 50 functions as a switching mechanism that switches between the film formation state and the retracted state.

[0078] The nozzle 42 has a first portion 42a and a second portion 42b. The first portion 42a and the second portion 42b are connected. The air outlet 41 is provided at the tip of the second portion 42b. The central axis A2 of the second portion 42b is inclined with respect to the central axis A1 of the first portion 42a. That is, the nozzle 42 is bent at the connection portion between the first portion 42a and the second portion 42b. The length of the second portion 42b is shorter than the length of the first portion 42a.

[0079] The nozzle support mechanism 50 linearly moves the nozzle 42 along the central axis A1. Since the central axis A2 of the second portion 42b is inclined with respect to the central axis A1, the direction in which the blow-out port 41 faces is changed by moving the nozzle 42 along the central axis A1. Therefore, it is possible to switch between a film-forming state and a retracted state.

[0080] The film-forming state is a state in which the blow-out port 41 faces the sample S. The direction in which the blow-out port 41 faces is along the central axis A2. When the sample S and the central axis A2 intersect, the blow-out port 41 faces the sample S. In the film-forming state, the central axis A2 intersects with the surface of the sample S. In the film-forming state, the gas 2 blown out from the blow-out port 41 flows toward the sample S. Therefore, a deposition film can be formed on the surface of the sample S.

[0081] The retracted state is a state in which the blow-out port 41 does not face the sample S. In the retracted state, the central axis A2 of the second portion 42b does not intersect with the surface of the sample S. In the molecular flow region, gas molecules fly almost straight, so in the retracted state, the gas 2 blown out from the blow-out port 41 flows in a direction different from the direction toward the sample S. Therefore, in the retracted state, the amount of gas 2 leaking out from the nozzle 42 and reaching the sample S can be reduced compared to the film-forming state.

[0082] 3.2. Operation 3.2.1. Nozzle and shield operation In the following, the operation of the focused ion beam device 300 will be described focusing on the differences from the operation of the focused ion beam device 100 described above, and a description of the similarities will be omitted.

[0083] 3.2.2. Deposition of the deposition film When a deposition film is formed using the gas injection device 40, the nozzle 42 is placed at the film formation position, as shown in Fig. 10. By placing the nozzle 42 at the film formation position, the nozzle 42 is placed in a state in which the blowing port 41 faces the sample S and a film can be formed.

[0084] 2, in the film-forming state, the valve 46 is opened to blow the gas 2 from the blowing port 41. This allows the gas 2 to be blown onto the surface of the sample S, and a deposition film can be formed on the surface of the sample S.

[0085] 3.2.3. Nozzle retraction When the control unit 80 receives an instruction to retract the nozzle 42, it causes the nozzle support mechanism 50 to move the nozzle 42 from the film formation position to the nozzle retraction position. By moving the nozzle 42 to the nozzle retraction position, the nozzle 42 is brought into a retracted state in which the blowing port 41 of the nozzle 42 does not face the sample S, as shown in Fig. 11. This makes it possible to reduce the amount of gas 2 leaking from the nozzle 42 and reaching the sample S.

[0086] 3.2.4. Inserting the nozzle When the control unit 80 receives an instruction to insert the nozzle 42, it causes the nozzle support mechanism 50 to move the nozzle 42 from the nozzle retracted position to the film formation position. By moving the nozzle 42 to the film formation position, the nozzle 42 enters a film formation ready state in which the blowing outlet 41 faces the sample S, as shown in FIG.

[0087] Effect The focused ion beam device 300 includes a nozzle support mechanism 50 that functions as a switching mechanism for switching between a film-forming state in which the outlet 41 of the nozzle 42 faces the sample S and a retracted state in which the outlet 41 does not face the sample S. Therefore, in the focused ion beam device 300, when the nozzle 42 is not in use, the outlet 41 can be put into a retracted state in which it does not face the sample S. Therefore, in the focused ion beam device 300, similar to the focused ion beam device 100, it is possible to prevent a deposition film from being unintentionally formed on the surface of the sample S so thick that it affects observation and analysis by an electron microscope.

[0088] In the focused ion beam device 300, the nozzle support mechanism 50, which functions as a switching mechanism, can switch between a film-forming state and a retracted state by moving the nozzle 42. Therefore, in the focused ion beam device 300, compared to the focused ion beam device 100 described above, the shielding member 60 is not required, and the number of parts can be reduced.

[0089] 3.4. Variations In the above-described third embodiment, the control unit 80 controls the nozzle support mechanism 50 to change the position of the nozzle 42, but the user may manually operate the nozzle support mechanism 50 to change the position of the nozzle 42.

[0090] 4. Fourth embodiment 4.1. Focused ion beam device Next, a focused ion beam device according to a fourth embodiment will be described with reference to the drawings. Figures 12 and 13 are diagrams showing the configuration of a focused ion beam device 400 according to the fourth embodiment. Note that Figures 12 and 13 correspond to Figures 4 and 5. Hereinafter, in the focused ion beam device 400 according to the fourth embodiment, components having the same functions as those of the focused ion beam device 100 according to the first embodiment and the focused ion beam device 300 according to the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0091] In the above-described focused ion beam device 300, as shown in Figures 10 and 11, the nozzle support mechanism 50 functioning as a switching mechanism switches between a film-formation state and a retracted state by moving the nozzle 42. In contrast, in the focused ion beam device 400, the nozzle support mechanism 50 functioning as a switching mechanism rotates and moves the nozzle 42 to switch between a film-formation state shown in Figure 12 and a retracted state shown in Figure 13.

[0092] The nozzle support mechanism 50 rotationally moves the nozzle 42. The nozzle support mechanism 50 includes, for example, a shaft member that rotatably supports the nozzle 42, and a driving device such as a motor, and rotates the nozzle 42 around the shaft member by the power of the driving device.

[0093] By rotating the nozzle 42, the nozzle 42 can be tilted to change the direction of the air outlet 41. This makes it possible to switch between a film-forming state in which the air outlet 41 faces the sample S and a retracted state in which the air outlet 41 does not face the sample S.

[0094] In the example shown in FIGS. 12 and 13, the nozzle 42 is a straight cylinder, but the nozzle 42 may be bent as shown in FIGS.

[0095] 4.2. Operation The operation of the focused ion beam device 400 is similar to that of the focused ion beam device 300 described above, except that the nozzle support mechanism 50 rotates the nozzle 42, and therefore a description thereof will be omitted.

[0096] Effect In the focused ion beam device 400, the nozzle support mechanism 50, which functions as a switching mechanism, can switch between a film-forming state and a retracted state by moving the nozzle 42. Therefore, in the focused ion beam device 400, similar to the focused ion beam device 100, it is possible to prevent a thick deposition film from being unintentionally formed on the surface of the sample S. Note that moving the nozzle 42 includes a case where the nozzle 42 is moved linearly as shown in Figs. 10 and 11, and a case where the nozzle 42 is moved rotationally as shown in Figs. 12 and 13.

[0097] 4.4. Variations 12 and 13, the nozzle support mechanism 50 rotates the nozzle 42 and the reservoir tank 44 as a unit, but although not shown, the nozzle support mechanism 50 may rotate only the nozzle 42. For example, by connecting the reservoir tank 44 and the nozzle 42 with a deformable member such as a resin tube or a metal bellows, it is possible to rotate only the nozzle 42.

[0098] Furthermore, the nozzle support mechanism 50 may move the nozzle 42 by combining the rotational movement of the nozzle 42 shown in FIGS. 12 and 13 and the linear movement of the nozzle 42 shown in FIGS.

[0099] 5. Fifth embodiment 5.1. Focused ion beam device Next, a focused ion beam device according to a fifth embodiment will be described with reference to the drawings. Fig. 14 and Fig. 15 are diagrams showing the configuration of a focused ion beam device 500 according to the fifth embodiment. Fig. 14 and Fig. 15 correspond to Fig. 4 and Fig. 5. Hereinafter, in the focused ion beam device 500 according to the fifth embodiment, members having the same functions as those of the focused ion beam device 100 according to the first embodiment, the focused ion beam device 300 according to the third embodiment, and the focused ion beam device 400 according to the fourth embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0100] In the above-described focused ion beam device 300 and focused ion beam device 400, switching between the film-formable state and the retracted state is performed by moving the nozzle 42. In contrast, in the focused ion beam device 500, switching between the film-formable state shown in FIG. 15 and the retracted state shown in FIG. 14 is performed by moving the sample S.

[0101] In the focused ion beam device 500, the nozzle 42 is fixed. The nozzle 42 is disposed in a position where the blow-out port 41 does not face the intersection point P0. The nozzle 42 is disposed, for example, so that the blow-out port 41 faces downward. The nozzle 42 is disposed in a position away from the intersection point P0.

[0102] The sample stage 30 moves the sample S between a processing position, which is the position of the intersection P0 shown in Fig. 14, and a film-forming position, which is shown in Fig. 15, where the sample S intersects with the central axis A0 of the nozzle 42. The sample stage 30 moves the sample S in the horizontal direction. The focused ion beam device 500 has a processing position where the sample S is processed and observed, a film-forming position where a deposition film is formed on the sample S, and are different.

[0103] As shown in FIG. 14, when the sample S is placed at the processing position, the nozzle 42 is in a retracted state in which the blowing outlet 41 does not face the sample S. This makes it possible to reduce the amount of gas 2 leaking from the nozzle 42 and hitting the sample S. As shown in FIG. 15, when the sample S is placed at the film formation position, the nozzle 42 is in a film formation ready state in which the blowing outlet 41 faces the sample S. This makes it possible to form a deposition film on the surface of the sample S. In this way, the sample stage 30 functions as a switching mechanism that switches between the film formation ready state and the retracted state.

[0104] 5.2. Operation 5.2.1. Nozzle and shield operation In the following, the operation of the focused ion beam device 500 will be described focusing on the differences from the operation of the focused ion beam device 100 described above, and a description of the similarities will be omitted.

[0105] 5.2.2. Deposition of the deposition film When a deposition film is formed using the gas injection device 40, the sample S is placed at the film formation position as shown in FIG. 15. By placing the sample S at the film formation position, the nozzle 42 is placed in a film formation ready state with the blowing port 41 facing the sample S. In the film formation ready state, the valve 46 is opened as shown in FIG. 2, and the gas 2 is blown out from the blowing port 41. This makes it possible to blow the gas 2 onto the surface of the sample S. Since the sample S is cooled by the sample stage 30, by blowing the gas 2 onto the surface of the sample S, a deposition film can be formed on the surface of the sample S without irradiating it with an electron beam or an ion beam.

[0106] 5.2.3. Processing and observation When processing and observation are to be performed after the deposition film is formed, the user instructs the control unit 80 to move the sample S to the processing position. When the control unit 80 receives the instruction to move the sample S to the processing position, it causes the sample stage 30 to move the sample S from the film formation position shown in Fig. 15 to the processing position shown in Fig. 14. By placing the sample S at the processing position, the sample S is placed at the intersection P0, and therefore the sample S can be processed and observed.

[0107] Furthermore, by placing the sample S at the processing position, the nozzle 42 is in a retracted state in which the blow-out port 41 does not face the sample S. In the retracted state, since the blow-out port 41 does not face the sample S, the amount of gas 2 leaking from the nozzle 42 to reach the sample S can be reduced. Therefore, for example, even when processing and observation are not performed, the amount of gas 2 leaking from the nozzle 42 to reach the sample S can be reduced by placing the sample S at the processing position.

[0108] 5.2.4. Movement to deposition position When moving the sample S to the film formation position, the user instructs the control unit 80 to move the sample S to the film formation position. When the control unit 80 receives the instruction to move the sample S to the film formation position, it causes the sample stage 30 to move the sample S from the processing position shown in Fig. 14 to the film formation position shown in Fig. 15. By placing the sample S at the film formation position, the nozzle 42 is brought into a film formation ready state with the blowing outlet 41 facing the sample S. This allows a deposition film to be formed on the surface of the sample S.

[0109] Effect In the focused ion beam device 500, the sample stage 30, which functions as a switching mechanism, can switch between a film-forming state and a retracted state by moving the sample S. Therefore, in the focused ion beam device 500, similar to the focused ion beam device 100, it is possible to prevent a deposition film from being unintentionally formed too thick on the surface of the sample S. .

[0110] In the focused ion beam device 500, since the nozzle 42 is fixed, a mechanism for moving the nozzle 42 is not necessary, as compared with, for example, the focused ion beam device 100, and the number of parts can be reduced.

[0111] 6. Other The present invention is not limited to the above-described embodiment, and various modifications are possible within the scope of the present invention.

[0112] In the above-described first embodiment, the focused ion beam device 100 includes the SEM barrel 10 and the FIB barrel 20, but the focused ion beam device 100 does not necessarily have to include the SEM barrel 10. The same is true for the focused ion beam devices according to the second to fifth embodiments, and they do not necessarily have to include the SEM barrel 10.

[0113] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be appropriately combined.

[0114] The present invention is not limited to the above-described embodiment, and various modifications are possible. For example, the present invention includes a configuration that is substantially the same as the configuration described in the embodiment. A substantially identical configuration is, for example, a configuration that has the same function, method, and result, or a configuration that has the same purpose and effect. The present invention also includes a configuration in which non-essential parts of the configuration described in the embodiment are replaced. The present invention also includes a configuration that has the same action and effect as the configuration described in the embodiment, or a configuration that can achieve the same purpose. The present invention also includes a configuration in which publicly known technology is added to the configuration described in the embodiment. [Explanation of symbols]

[0115] Reference Signs List 2...gas, 4...gas source, 10...SEM lens barrel, 20...FIB lens barrel, 30...sample stage, 32...cooling mechanism, 40...gas injection device, 41...blowout port, 42...nozzle, 42a...first part, 42b...second part, 44...reservoir tank, 46...valve, 50...nozzle support mechanism, 60...shielding member, 70...shielding member support mechanism, 72...support member, 73...shaft member, 74...driving device, 80...control unit, 90...detector, 100...focused ion beam device, 102...sample chamber, 200...focused ion beam device, 300...focused ion beam device, 400...focused ion beam device, 500...focused ion beam device

Claims

1. 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowing port; A sample stage for supporting the sample; a blocking member for impeding the flow of the gas; a shielding member support mechanism that supports the shielding member movably between a shielding position between the air outlet and the sample supported by the sample stage and a shielding member retracted position that is not located between the air outlet and the sample supported by the sample stage; and 1. A focused ion beam device comprising:

2. In claim 1, a nozzle support mechanism that supports the nozzle so as to be movable between a film-forming position where the gas can be blown from the blowing port onto the sample and a nozzle retracted position different from the film-forming position; a control unit for controlling the nozzle support mechanism and the shielding member support mechanism; Including, The control unit causes the nozzle support mechanism to move the nozzle from the film formation position to the nozzle retraction position, and causes the shielding member support mechanism to move the shielding member from the shielding member retraction position to the shielding position.

3. In claim 2, The control unit causes the nozzle support mechanism to move the nozzle from the nozzle retraction position to the film formation position, and causes the shielding member support mechanism to move the shielding member from the shielding position to the shielding member retraction position.

4. In claim 1, a nozzle support mechanism that movably supports the nozzle, The shielding member support mechanism mechanically links with the movement of the nozzle to move the shielding member between the shielding position and the shielding member retracted position.

5. In claim 1, a detector for detecting a signal emitted from the sample; The shielding member is connected to the detector.

6. 1. A focused ion beam apparatus for processing a sample by irradiating the sample with an ion beam, comprising: an ion beam column for irradiating the sample with an ion beam; a nozzle for blowing a gas for forming a deposition film onto the sample from a blowing port; A sample stage for supporting the sample; a switching mechanism for switching between a film-forming state in which the air outlet faces the sample and a retracted state in which the air outlet does not face the sample; 1. A focused ion beam device comprising:

7. In claim 6, The switching mechanism switches between the film-forming state and the retracted state by moving the nozzle.

8. In claim 7, The nozzle is bent.

9. In claim 6, the sample stage movably supports the sample; The switching mechanism switches between the film-forming state and the retracted state by moving the sample.

10. In any one of claims 1 to 9, A focused ion beam device including a cooling mechanism for cooling the sample stage.

11. In any one of claims 1 to 9, A tank containing a gas source for generating the gas; a valve provided between the nozzle and the tank; Including, A focused ion beam apparatus, wherein the gas is supplied from the tank to the nozzle by opening the valve.

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