Substrate processing method, semiconductor device manufacturing method, program, and substrate processing device

Abstract

To provide a technique that when converging a distribution of temperatures of substrates in a processing chamber which are varied when a substrate is carried into the processing chamber into a target temperature distribution, can reduce time required for the convergence to thereby improve throughput in processing the substrate.SOLUTION: A substrate processing method comprises: a step (a) of adjusting a temperature in a processing chamber so that a temperature distribution in an arraying direction of a plurality of substrates in the processing chamber configured to store the plurality of substrates becomes equal to a first distribution in which at least temperatures of some substrates in the processing chamber are equal to a first temperature; a step (b) of carrying the plurality of substrates into the processing chamber in a state where the temperature distribution in the arraying direction in the processing chamber is made to be equal to the first distribution; a step (c) of adjusting the temperature in the processing chamber so that the temperature distribution in the arraying direction in the processing chamber becomes equal to a second distribution in which temperatures of at least some substrates in the processing chamber are equal to a second temperature different from the first temperature, after the step (b); and a step (d) of processing the plurality of substrates, in a state where the temperature distribution in the arraying direction in the processing chamber is made to be equal to the second distribution, after the step (c).SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method, a semiconductor device manufacturing method, a program, and a substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art One step in the manufacturing process of a semiconductor device is to carry a substrate into a processing chamber (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-143745 A Summary of the Invention [Problem to be solved by the invention]

[0004] When a substrate is carried into the processing chamber, the temperature distribution in the processing chamber may change to a temperature distribution different from the temperature distribution (target temperature distribution) used when processing the substrate. In this case, in order to converge the temperature distribution after the change to the target temperature distribution, the temperature in the processing chamber may be adjusted using a temperature adjustment means such as a heater, but it may take time to converge to the target temperature distribution.

[0005] The present disclosure provides a technology that can shorten the time it takes for the temperature distribution within a processing chamber, which changes when a substrate is loaded into the processing chamber, to converge to a target temperature distribution, thereby improving the throughput of substrate processing. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, (a) adjusting a temperature in a processing chamber configured to be able to accommodate a plurality of substrates, so that a temperature distribution in the processing chamber in an arrangement direction of the plurality of substrates becomes a first distribution in which at least a portion of the processing chamber has a first temperature; (b) loading the plurality of substrates into the processing chamber while maintaining a temperature distribution in the arrangement direction within the processing chamber at the first distribution; (c) after (b), adjusting a temperature in the processing chamber in the arrangement direction to a second temperature distribution in the processing chamber such that at least a portion of the processing chamber has a second temperature different from the first temperature; (d) after (c), processing the plurality of substrates in a state in which the temperature distribution in the arrangement direction in the processing chamber is the second distribution; The present invention provides a technique having the following features: Effect of the Invention

[0007] According to the present disclosure, when the temperature distribution within a processing chamber, which changes when a substrate is loaded into the processing chamber, is converged to a target temperature distribution, it is possible to shorten the time required for convergence and improve the throughput of substrate processing. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus suitably used in one embodiment of the present disclosure, showing a processing furnace 202 portion in vertical cross section. [Diagram 2] FIG. 2 is a schematic configuration diagram of a controller 121 of a substrate processing apparatus suitably used in one embodiment of the present disclosure, and is a block diagram showing a control system of the controller 121. [Diagram 3] FIG. 3 is a diagram showing temperature changes in the upper region, the central region, and the lower region in the process chamber 201 according to one embodiment of the present disclosure. [Figure 4] FIG. 4 is a diagram showing temperature changes in the upper region, the central region, and the lower region in the processing chamber 201 in the first modification. [Diagram 5]FIG. 5 is a diagram showing temperature changes in the upper region, the central region, and the lower region in the processing chamber 201 in the second modification. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] <One aspect of the present disclosure> Hereinafter, one embodiment of the present disclosure will be described mainly with reference to Fig. 1. Note that all drawings used in the following description are schematic, and the dimensional relationships of each element, the ratio of each element, etc. shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationships of each element, the ratio of each element, etc. between multiple drawings do not necessarily match.

[0010] (1) Configuration of the substrate processing device As shown in FIG. 1, the processing furnace 202 has a heater 206 as a temperature adjustment unit (heating unit). The heater 206 is cylindrical with an open top and bottom, and is installed vertically. The heater 206 is arranged along the arrangement direction of the wafers 200 as substrates, and is composed of five zone heaters 206a, 206b, 206c, 206d, and 206e, in that order from the top. These heaters 206a to 206e are configured so that the temperature of each zone can be controlled individually and independently. The heater 206 also functions as an activation mechanism (excitation unit) that activates (excites) the gas with heat. An outer wall 210 is provided on the outside of the heater 206. The outer wall 210 includes a side wall 210a that covers the periphery of the heater 206, a ceiling 210b that covers the upper part of the heater 206, and a bottom 210c that covers the lower part of the heater 206.

[0011] An exhaust pipe 254 as an exhaust flow path for exhausting a cooling gas (cooling airflow) flowing between the reaction tube 203 and the outer wall portion 210 is provided in the outer wall portion 210 so as to penetrate the ceiling portion 210b. A blower 270 as a cooling gas exhaust device is connected to the exhaust pipe 254. An exhaust side damper or an exhaust side shutter for adjusting an exhaust flow rate may be provided on the exhaust pipe 254 upstream of the blower 270.

[0012] Further, the outer wall portion 210 is provided with a supply pipe 251 for supplying a cooling gas between the reaction tube 203 and the outer wall portion 210. A supply side damper 264 is connected to the supply pipe 251 as a cooling gas flow rate adjusting unit for adjusting the supply flow rate of the cooling gas. Instead of the supply side damper 264, or together with the supply side damper 264, a supply side shutter may be connected to the supply pipe 251. The supply side damper 264 can supply and stop the supply of the cooling gas between the reaction tube 203 and the outer wall portion 210 by opening and closing a valve while the blower 270 is in operation. Furthermore, the supply side damper 264 is configured to adjust the opening degree while the blower 270 is in operation, so as to adjust the flow rate of the cooling gas supplied between the reaction tube 203 and the outer wall portion 210. The flow rate of the cooling gas can also be adjusted by adjusting the rotation speed of the blower 270.

[0013] A cooling gas exhaust unit is mainly constituted by the exhaust pipe 254 and the blower 270. A cooling gas supply unit is mainly constituted by the supply pipe 251 and the supply side damper 264. A processing chamber cooling unit (processing chamber cooling system) serving as a cooling device is mainly constituted by the cooling gas exhaust unit and the cooling gas supply unit. The cooling gas flow rate adjustment unit may include a blower 270 whose rotation speed is controllable in addition to the supply side damper 264. The cooling airflow (cooling gas) taken in from the supply pipe 251 may be, for example, air, or an inert gas (for example, nitrogen gas or rare gas) supplied from an inert gas supply source (not shown).

[0014] A reaction tube 203 is disposed concentrically with the heater 206 inside the heater 206. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed in a cylindrical shape with a closed upper end and an open lower end. A manifold 209 is disposed concentrically with the reaction tube 203 below the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS) and is formed in a cylindrical shape with an open upper end and a closed lower end. The upper end of the manifold 209 engages with a bottom 210c of the outer wall 210 and is configured to support the bottom 210c. The reaction tube 203 is installed vertically like the heater 206. The reaction tube 203 and the manifold 209 mainly constitute a processing vessel (reaction vessel). A processing chamber 201 is formed in the cylindrical hollow portion of the processing vessel. The processing chamber 201 is configured to be capable of accommodating a wafer 200. In the processing chamber 201, processing of the wafer 200 is performed.

[0015] In the processing chamber 201, a nozzle 249 as a gas introduction part is provided so as to penetrate a side wall of the manifold 209. A gas supply pipe (not shown) is connected to the nozzle 249. A processing gas supply source (not shown) or the like is connected to the upstream side of the gas supply pipe, which is the side opposite to the side connected to the nozzle 249, via an MFC (mass flow controller) (not shown) as a gas flow rate controller. In addition, an opening / closing valve (e.g., an air valve) (not shown) is provided on at least one of the upstream side and downstream side of the MFC.

[0016] The manifold 209 is provided with an exhaust pipe 231 for exhausting the atmosphere of the processing chamber 201. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector for detecting the pressure in the processing chamber 201 and an APC valve 244 as a pressure regulator. The APC valve 244 is configured to be able to perform evacuation and stop evacuation of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is in operation, and further, to adjust the pressure in the processing chamber 201 by adjusting the valve opening based on pressure information detected by the pressure sensor while the vacuum pump 246 is in operation. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, and the pressure sensor. The vacuum pump 246 may be included in the exhaust system.

[0017] Below the manifold 209, a seal cap 219 is provided as a furnace port cover capable of airtightly closing the lower end opening of the manifold 209. The seal cap 219 is made of a metal material such as SUS, and is formed in a disk shape. The seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115, which is installed outside the reaction tube 203 and serves as a lifting mechanism for a boat 217 described later. The boat elevator 115 is configured as a transfer device (transfer mechanism) that lifts and lowers the seal cap 219 to load and unload (transport) the wafers 200 into and out of the processing chamber 201.

[0018] The region in the processing vessel corresponding to heater 206a (closed end side of reaction tube 203) may be referred to as the upper region. The region in the processing vessel corresponding to heater 206b may be considered to be included in the upper region. The region in the processing vessel corresponding to heater 206e may be referred to as the lower region. The region below heater 206e in the processing vessel, for example, the region where manifold 209 and the opening of reaction tube 203 are located, may be considered to be included in the lower region. The region in the processing vessel corresponding to heater 206d may be considered to be included in the lower region. The region in the processing vessel corresponding to heater 206c may be referred to as the central region. The region in the processing vessel corresponding to at least one of heater 206b and heater 206d may be considered to be included in the central region.

[0019] The boat 217 as a substrate transport mechanism is configured to support multiple wafers, for example 25 to 200 wafers 200, in a horizontal position and aligned vertically with their centers aligned, i.e., arranged at intervals. The boat 217 is made of a heat-resistant material such as quartz or SiC. At the bottom of the boat 217, heat insulating plates 218 made of a heat-resistant material such as quartz or SiC are supported in multiple stages. In this specification, a numerical range such as "25 to 200 sheets" means that the lower limit and the upper limit are included in the range. Therefore, for example, "25 to 200 sheets" means "25 sheets or more and 200 sheets or less". The same applies to other numerical ranges.

[0020] A temperature sensor 263 serving as a temperature detector is installed inside the reaction tube 203. Based on temperature information detected by the temperature sensor 263, the power supply to each of the five heaters 206a to 206e of the heater 206 is independently adjusted, so that the temperature inside the processing chamber 201 has a desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0021] As shown in FIG. 2, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as, for example, a touch panel is connected to the controller 121. An external storage device 123 can be connected to the controller 121. The substrate processing apparatus may be configured to include one control unit or multiple control units. That is, the control for performing the processing sequence described later may be performed using one control unit or multiple control units. The multiple control units may be configured as a control system connected to each other by a wired or wireless communication network, and the control for performing the processing sequence described later may be performed by the entire control system. In this specification, when the term "control section" is used, it may include one control section, or may include multiple control sections, or may include a control system made up of multiple control sections.

[0022] The storage device 121c is composed of, for example, a flash memory, a hard disk drive (HDD), a solid state drive (SSD), etc. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures and conditions of the substrate processing described later are described, etc. are recorded and stored in a readable manner. The process recipe is a combination of procedures in the substrate processing described later that are executed by the controller 121 in the substrate processing apparatus to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively referred to simply as a program. In addition, the process recipe is also simply referred to as a recipe. In this specification, when the word program is used, it may include only a recipe, only a control program, or both. The RAM 121b is configured as a memory area (work area) in which the programs and data read by the CPU 121a are temporarily stored.

[0023] The I / O port 121d is connected to the above-mentioned MFC, valves, pressure sensor, APC valve 244, vacuum pump 246, heater 206, temperature sensor 263, supply side damper 264, blower 270, boat elevator 115, and the like.

[0024] The CPU 121a is configured to be able to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122, etc. The CPU 121a is configured to be able to control the flow rate adjustment operation of various substances (various gases) by the MFC, the opening and closing operation of the valves, the opening and closing operation of the APC valve 244 and the pressure adjustment operation by the APC valve 244 based on a pressure sensor, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 206 based on the temperature sensor 263, the opening and closing control of the supply side damper 264, the start, stop and rotation speed adjustment of the blower 270, the lifting and lowering operation of the boat 217 by the boat elevator 115, etc., in accordance with the contents of the read recipe.

[0025] The controller 121 can be configured by installing the above-mentioned program recorded and stored in the external storage device 123 into a computer. The external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, and a semiconductor memory such as a USB memory or an SSD. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term recording media is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both of them. The program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0026] (2) Substrate processing An example of substrate processing performed as one step of a semiconductor device manufacturing process using the above-mentioned substrate processing apparatus will be described mainly with reference to Fig. 3. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by a controller 121.

[0027] In the substrate processing according to the present embodiment, (a) Step A of adjusting a temperature in a processing chamber 201 configured to accommodate the plurality of wafers 200 in the processing chamber 201 so that a temperature distribution in an arrangement direction of the plurality of wafers 200 in the processing chamber 201 becomes a first distribution in which at least a part of the processing chamber 201 has a first temperature; (b) Step B of loading a plurality of wafers 200 into the processing chamber 201 in a state in which the temperature distribution in the arrangement direction in the processing chamber 201 is a first distribution; (c) after step B, a step C of adjusting the temperature in the processing chamber 201 in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 so that the temperature distribution in the processing chamber 201 becomes a second distribution in which at least a part of the processing chamber 201 has a second temperature different from the first temperature; (d) after step C, step D of processing the plurality of wafers 200 in a state in which the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is a second distribution; has.

[0028] (Step A: First temperature adjustment process) In step A, the temperature inside the processing chamber 201 is adjusted to a predetermined temperature.

[0029] Hereinafter, a specific description will be given with reference to FIG. 3. FIG. 3 shows the temperature in the process chamber 201 at a predetermined timing for each of the upper region, the central region, and the lower region. The vertical axis of FIG. 3 shows the temperature in each region in the process chamber 201 in [° C.]. The horizontal axis of FIG. 3 shows the elapsed time in [h]. The dotted line in FIG. 3 shows the temperature in the lower region in the process chamber 201. The dashed line shows the temperature in the central region in the process chamber 201. The solid line shows the temperature in the upper region in the process chamber 201. The arrow i in the upper part of FIG. 3 shows the time when the temperature in the process chamber 201 has a predetermined distribution (first distribution) due to the temperature adjustment in step A, and shows the time when the substrate processing apparatus is in an idle state described later. The arrow ii shows the time when the substrate processing apparatus is in a standby state described later. The arrow iii shows the start time of step B described later. The arrow iv shows the start time of a pressure adjustment process described later. The arrows v and vi show the start time and end time of a process chamber cooling process in step C described later, respectively. Arrow vii indicates the start point of step D, which will be described later.

[0030] In step A, while the substrate processing apparatus is in a standby state (idle state) until it transitions to a standby state, the temperature in the processing chamber 201 is adjusted so that the temperature distribution in the arrangement direction of the multiple wafers 200 in the processing chamber 201 becomes a first distribution (see a in FIG. 3) in which at least a part (e.g., the lower region) in the processing chamber 201 becomes a first temperature (e.g., 100° C.). More specifically, the set temperatures of the heaters 206a to 206e are adjusted so that the temperatures in the upper region, the central region, and the lower region become, for example, 92° C., 96° C., and 100° C., respectively, in the first distribution (see arrow i in FIG. 3). At this time, the power supply to the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 becomes such a temperature distribution. By doing so, 100° C., which is the temperature in the lower region, becomes the maximum temperature (first temperature) in the first distribution, and 92° C., which is the temperature in the upper region, becomes the minimum temperature in the first distribution. In this embodiment, for example, the first distribution has a first deviation, that is, a temperature width of 100° C.-92° C.=8° C. Note that, as the temperature in each region in the processing chamber 201 adjusted in this step and step C, the temperature detected by the temperature sensor 263 provided in each region can be used.

[0031] It is not necessary to keep all of the heaters 206a to 206e ON throughout the entire period of this step. During at least a portion of the period, at least one of the heaters 206a to 206e may be turned OFF while the other heaters are turned ON to adjust the temperature inside the processing chamber 201.

[0032] (Step B: Wafer loading process) Thereafter, when the substrate processing apparatus receives an instruction to execute step B and transitions to a standby state (see arrow ii in FIG. 3), the lower end opening of the manifold 209 is opened, and the boat 217 supporting a plurality of wafers 200 is lifted by the boat elevator 115 and loaded (boat loaded) into the processing chamber 201, as shown in FIG. 1. In this state, the seal cap 219 seals the lower end of the manifold 209. In this manner, the wafers 200 are loaded (provided) into the processing chamber 201.

[0033] At this time, in this embodiment, the wafers 200 are loaded into the processing chamber 201 with the temperature distribution in the arrangement direction of the multiple wafers 200 in the processing chamber 201 set to the above-mentioned first distribution (see arrow iii in FIG. 3). In this step, the boat 217, which is placed outside the substrate processing apparatus and has a lower temperature than the temperature inside the processing chamber 201 at the time of loading, is loaded into the substrate processing apparatus, so that the temperature inside the processing chamber 201 drops to about 80° C. (see FIG. 3).

[0034] (Step C: Second temperature adjustment step) When the substrate processing apparatus transitions to a standby state, a temperature adjustment in the processing chamber 201 is started as a second temperature adjustment step. Specifically, the set temperatures of the heaters 206a to 206e are adjusted so that the temperature distribution in the arrangement direction of the multiple wafers 200 in the processing chamber 201 becomes a second distribution (target temperature distribution, see b in FIG. 3) in which at least a part (e.g., the lower region) in the processing chamber 201 becomes a second temperature (e.g., 60°C) which is a target temperature. For example, the set temperatures of the heaters 206a to 206e are adjusted so that the temperatures in all of the upper region, the central region, and the lower region become 60°C. That is, in this embodiment, the maximum and minimum values ​​of the temperature in the second distribution are 60°C, and the second deviation (temperature width) of the second distribution is 0°C. However, even if the set temperature of the heater 206 is adjusted (changed) in this way, the temperature inside the processing chamber 201 does not immediately drop, and the temperature during the standby state (approximately 100° C.) is substantially maintained for at least a predetermined time until step B is started (see FIG. 3).

[0035] The temperature adjustment by the heater 206 as the second temperature adjustment process is performed continuously even after step B is started until step D is completed, according to the set temperature of the heater 206 that is adjusted so that the temperature distribution in the processing chamber 201 becomes the second distribution. Note that the start timing of the second temperature adjustment process is not limited to before the start of step B (when transitioning to the standby state), and may be simultaneous with the start of step B or any timing between the end of step B and the start of step D.

[0036] In this embodiment, the second temperature adjustment step further includes cooling the processing chamber 201 by the processing chamber cooling unit so as to bring the temperature distribution in the processing chamber 201 closer to the second distribution (processing chamber cooling step). Specifically, the cooling gas discharged by the blower 270 is circulated through the space between the reaction tube 203 and the outer wall 210 (the outer space of the processing chamber 201) via the supply pipe 251 to lower the temperature in the processing chamber 201. At this time, the flow rate of the cooling gas discharged by the blower 270 is adjusted so as to bring the temperature in the processing chamber 201 closer to the second distribution (see arrows v and vi in ​​FIG. 3). The flow rate of the cooling gas is adjusted by at least one of adjusting the opening degree of the supply side damper 264 and adjusting the rotation speed of the blower 270. The cooling gas supplied between the reaction tube 203 and the outer wall 210 is exhausted via the exhaust pipe 254.

[0037] In this embodiment, by using both temperature control using the heater 206 and temperature control using the blower 270 (cooling device) as the second temperature adjustment process during the period from the time of the arrow v to the time of the arrow vi, when the first temperature is higher than the second temperature, the time until the temperature converges to the first distribution can be shortened. Furthermore, since the accuracy of the temperature control by the heater 206 can be improved even in the low temperature region, the time until the temperature converges to the second distribution can be shortened. This is because, in the low temperature region, it may be difficult to perform accurate temperature control only by controlling the power of the heater 206. As in this embodiment, by controlling the power of the heater 206 while cooling the heater 206, it is possible to perform accurate temperature control by controlling the power of the heater 206 even in the low temperature region.

[0038] (Pressure adjustment process) After step B is completed, evacuation (reduced pressure exhaust) is performed by the vacuum pump 246 so that the inside of the processing chamber 201, i.e., the space in which the wafer 200 exists, reaches a desired pressure (vacuum level) (see arrow iv in FIG. 3). At this time, the pressure inside the processing chamber 201 is measured by a pressure sensor, and the APC valve 244 is feedback-controlled based on the measured pressure information. Evacuation inside the processing chamber 201 continues at least until processing of the wafer 200 is started.

[0039] (Step D: Substrate Processing) In step C, the temperature in the processing chamber 201 is adjusted to have the second distribution, and then a plurality of wafers 200 loaded into the processing chamber 201 are processed. As an example, a predetermined source gas, a reaction gas, and an inert gas are supplied to the wafers 200 in the processing chamber 201, and a desired film is formed on the wafers 200.

[0040] That is, in this embodiment, the wafers 200 are processed in a state in which the temperature distribution in the arrangement direction of the plurality of wafers 200 in the processing chamber 201 is set to the second distribution.

[0041] (After purging and atmospheric pressure recovery) After step D is completed, an inert gas is supplied as a purge gas from a nozzle into the processing chamber 201 and exhausted through the exhaust pipe 231. This purges the processing chamber 201, and gases and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (after-purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

[0042] (Boat unloading and wafer discharging) Thereafter, the seal cap 219 is lowered by the boat elevator 115, and the bottom end of the manifold 209 is opened. Then, the processed wafers 200 supported by the boat 217 are transferred from the bottom end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). After the boat unloading, the bottom opening of the manifold 209 is sealed (shutter close). After being transferred to the outside of the reaction tube 203, the processed wafers 200 are taken out of the boat 217 (wafer discharging).

[0043] (Step A': First temperature adjustment step) When the substrate processing apparatus transitions to an idle state again after the boat is unloaded and the shutter is closed, the heater 206 is controlled to adjust the temperature inside the processing chamber 201 to a first distribution.

[0044] (3) Effects of this mode According to this aspect, one or more of the following effects can be obtained.

[0045] (a) In step A, the temperature distribution in the processing chamber 201 is adjusted to a first temperature distribution different from the second distribution (target temperature distribution) used in performing step D, and in step B, the wafer 200 is loaded into the processing chamber 201 with the temperature distribution set to the first distribution. Furthermore, in step C, the temperature is adjusted to a second temperature distribution, and in step D, the wafer 200 is processed with the temperature distribution set to the second distribution. As a result, when the temperature distribution in the processing chamber 201, which fluctuates due to the wafer 200 being loaded into the processing chamber 201, is converged to the second distribution, which is the target temperature distribution, the time required for convergence can be shortened, and the throughput of the substrate processing can be improved. This will be described below.

[0046] When step B is performed, the low-temperature boat 217 waiting outside the processing chamber 201 is carried into the processing chamber 201, so that the temperature inside the processing chamber 201 drops. At this time, the boat 217 is lifted from the opening side to the closed end side of the reaction tube 203, so that the upper part of the boat 217 heated by all the heaters is arranged in the upper region, for example, in the order of the heaters 206e, 206d, 206c, and 206b. The central part of the boat 217 heated by the three heaters is arranged in the order of the heaters 206e and 206d. The lower region is arranged, for example, in the lower part of the boat 217 heated only by the heater 206e or hardly heated by the heater 206. In this way, the parts of the boat 217 that are heated by the heater 206 for different times when the boat is loaded are arranged in the processing chamber 201 depending on the region. As a result, the temperature in the processing chamber 201 after the boat 217 is loaded tends to have deviations (variations) depending on the region. Specifically, the temperature is highest in the upper region, and the temperature decreases downward from the central region to the lower region. Furthermore, since the boat loading in step B is performed with the lower end opening of the manifold 209 open, low-temperature air outside the substrate processing apparatus flows into the substrate processing apparatus, lowering the temperature in the processing chamber 201. The lower region close to the lower end opening of the manifold 209 is most susceptible to the effect of this temperature drop, and the effect becomes less pronounced as the substrate moves upward from the central region to the upper region. In the lower region, the temperature drop begins immediately after the start of boat loading, and then the temperature drop begins in the order of the central region and the upper region. In other words, the manner of temperature change over time after the start of boat loading (i.e., the characteristics of the temperature change) differs from region to region. Furthermore, the temperature drop is greatest in the lower region, and the temperature drop decreases upward from the central region to the upper region. This makes it more evident that the temperature in the processing chamber 201 tends to vary from region to region when step B is performed. If large variations in temperature distribution in the processing chamber 201 occur when step B is performed, the time required to eliminate these variations, that is, the time required to converge the temperature distribution in the processing chamber 201 to the second distribution (target temperature distribution) (convergence time), becomes long.This may result in a delay in starting step D, which may reduce throughput.

[0047] In this embodiment, in consideration of the temperature fluctuation in the processing chamber 201 that occurs when step B is performed, the temperature distribution in the processing chamber 201 is adjusted in step A to a first distribution that is different from the second distribution that is the target temperature distribution. This makes it possible to shorten the time it takes for the temperature distribution in step C to converge to the second distribution. As a result, the start of step D can be advanced, and a decrease in throughput can be avoided.

[0048] (b) By making the first temperature of the first distribution in step A higher than the second temperature of the second distribution in step C, it is possible to facilitate temperature adjustment (temperature control) by the heater 206 and shorten the time required to converge to the second distribution (target temperature distribution). Furthermore, by maintaining the inside of the processing chamber 201 at a high temperature before performing step B in which the wafer 200 is loaded, it is possible to remove moisture in the processing chamber 201 and reduce the effect of moisture in the processing chamber 201 when performing step D.

[0049] (c) By making the minimum temperature value in the first distribution higher than the maximum temperature value in the second distribution, it is possible to improve the controllability of the temperature adjustment by the heater 206 in step A. This makes it easier to further shorten the time required for the temperature distribution in the process chamber 201 to converge to the second distribution.

[0050] (d) In step A, the heater 206 is controlled so that the first distribution has a first deviation. In this manner, by providing a predetermined deviation (temperature width) to the first distribution in advance in step A, it is possible to reduce the temperature deviation (temperature variation due to region) in the arrangement direction of the wafers 200 that occurs when the wafers 200 are loaded into the processing chamber 201.

[0051] (e) In step C, the temperature in the processing chamber 201 is adjusted so that the second distribution becomes uniform (the second deviation is zero) in the arrangement direction of the wafers 200. In this manner, by reducing the temperature deviation (temperature variation) in the processing chamber 201 that occurs when the wafers 200 are loaded into the processing chamber 201, it is possible to shorten the convergence time when performing temperature control so as to obtain the second distribution in which the second deviation is zero.

[0052] (f) The first distribution is set so that the time taken for the temperature distribution in the processing chamber 201 to converge to the second distribution from the start of step B is shorter than the time taken for the temperature distribution in the processing chamber 201 to converge to the second distribution in step A by adjusting the temperature in the processing chamber 201. This makes it possible to shorten the convergence time and therefore improve the throughput.

[0053] (g) The first distribution is set so that the maximum value of the deviation of the temperature distribution in the processing chamber 201 occurring after step B is smaller than that in the case where the temperature in the processing chamber 201 is adjusted to make the temperature distribution in the processing chamber 201 the second distribution in step A. This makes it possible to shorten the convergence time, thereby improving the throughput.

[0054] (h) The first distribution is set according to the characteristics of the change in temperature distribution in the processing chamber 201 caused by the loading of the wafer 200 in step B. Specifically, as described above, the lower region (the opening side of the reaction tube 203) is most susceptible to the effect of the temperature drop in the processing chamber 201 caused by the loading of the wafer 200, and the effect is less noticeable as it moves upward, that is, the central region and the upper region (the closed end side of the reaction tube 203). Taking this characteristic into consideration, in this embodiment, the first distribution is set to have a deviation that cancels (compensates for) the temperature variation that occurs when the wafer 200 is loaded. More specifically, the temperature in the lower region is set to the maximum value in the first distribution, and the temperature in the upper region is set to the minimum value in the first distribution (see FIG. 3). This can further shorten the convergence time and further improve the throughput.

[0055] (i) In step A, the heater 206 that heats the processing chamber 201 is controlled, and in step C, the heater 206 and the blower 270 that cools the processing chamber 201 are controlled to adjust the temperature of the processing chamber 201, thereby ensuring the above-mentioned effects.

[0056] (4) Variations The substrate processing in this embodiment can be modified as shown in the following modified examples. These modified examples can be combined as desired. Unless otherwise specified, the processing procedure and processing conditions in each step of each modified example can be the same as the processing procedure and processing conditions in each step of the substrate processing described above.

[0057] (Variation 1) As shown in Fig. 4, in step A, it is not necessary to previously provide the first distribution (see c in Fig. 4) with a deviation (first deviation) that cancels out the temperature deviation (temperature variation) that occurs when the wafer 200 is loaded. In other words, when the substrate processing apparatus is in an idle state, the temperature distribution in the processing chamber 201 may be the first distribution in which all of the upper region, the central region, and the lower region are at the first temperature (for example, about 100°C) (see arrow i in Fig. 4). In other words, when the substrate processing apparatus is in an idle state, all of the regions in the processing chamber 201 may be uniformly heated to approximately the same temperature (see Fig. 4).

[0058] FIG. 4 shows the temperature in the process chamber 201 at a predetermined timing for each of the upper region, the central region, and the lower region. The vertical axis of FIG. 4 shows the temperature in each region of the process chamber 201 in [° C.]. The horizontal axis of FIG. 4 shows the elapsed time in [h]. The dotted line in FIG. 4 shows the temperature in the lower region of the process chamber 201. The dashed line shows the temperature in the central region of the process chamber 201. The solid line shows the temperature in the upper region of the process chamber 201. The arrow i in the upper part of FIG. 4 shows the time when the temperature in the process chamber 201 has a predetermined distribution (first distribution) due to the temperature adjustment in step A and the substrate processing apparatus is in an idle state. The arrow ii shows the time when the substrate processing apparatus is in a standby state. The arrow iii shows the start time of step B. The arrow iv shows the start time of the pressure adjustment process. The arrows v and vi show the start time and the end time of the process chamber cooling process in step C, respectively. The arrow vii shows the start time of step D.

[0059] In this modified example, by loading the wafer 200 at a temperature higher than the temperature range in the substrate processing process (see arrows iii and vii in Figure 4), the temperature can be better controlled than when loading the wafer 200 at the temperature range in the substrate processing process, thereby achieving the effect of shortening the convergence time.

[0060] (Variation 2) As shown in FIG. 5, in step A, the temperature in the processing chamber 201 may be adjusted to a first distribution (see FIG. 5e) that is a temperature range (about 75° C.) similar to the target temperature distribution (second distribution, see FIG. 5f). In other words, when the substrate processing apparatus is in an idle state, the temperature distribution in the processing chamber 201 may be a first distribution in which all of the upper, central, and lower regions have a relatively low temperature similar to the temperature range (about 75° C.) in the substrate processing step (see arrows i and vii in FIG. 5). In this way, when the substrate processing apparatus is in an idle state, the temperature distribution in the processing chamber 201 may be a first distribution that is lower than the above-mentioned mode. For example, the minimum temperature value in the first distribution may be lower than the maximum temperature value in the second distribution (see FIG. 5).

[0061] FIG. 5 shows the temperature in the process chamber 201 at a predetermined timing for each of the upper region, the central region, and the lower region. The vertical axis of FIG. 5 shows the temperature in each region of the process chamber 201 in [° C.]. The horizontal axis of FIG. 5 shows the elapsed time in [h]. The dotted line in FIG. 5 shows the temperature in the lower region of the process chamber 201. The dashed line shows the temperature in the central region of the process chamber 201. The solid line shows the temperature in the upper region of the process chamber 201. The arrow i in the upper part of FIG. 5 shows the time when the temperature in the process chamber 201 has a predetermined distribution (first distribution) due to the temperature adjustment in step A and the substrate processing apparatus is in an idle state. The arrow ii shows the time when the substrate processing apparatus is in a standby state. The arrow iii shows the start time of step B. The arrow iv shows the start time of the pressure adjustment process. The arrows v and vi show the start time and the end time of the process chamber cooling process in step C, respectively. The arrow vii shows the start time of step D.

[0062] In this modified example as well, in step A, a deviation that cancels out the temperature deviation (temperature variation) that occurs when the wafer 200 is loaded is given to the first distribution in advance (see arrow i in Figure 5), thereby achieving the effect of shortening the convergence time compared to the case where the wafer 200 is loaded without giving this deviation to the first distribution.

[0063] <Other Aspects of the Disclosure> Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the above embodiments and can be modified in various ways without departing from the spirit and scope of the present disclosure.

[0064] For example, in the above embodiment, the case where the temperature in the processing chamber 201 is adjusted using the heater 206 in step A has been described as an example. However, the present disclosure is not limited to such an embodiment. For example, the temperature in the processing chamber 201 may be adjusted by simultaneously using the heater 206 and the blower 270 during at least a part of the period of step A. The same effect as the above embodiment can be obtained in this embodiment. Furthermore, in this embodiment, a sufficient temperature deviation (tilt controllable width) can be provided in advance even in the low temperature region. This is because temperature control in the temperature decreasing direction cannot be performed only by power control using the heater 206, and it may be difficult to perform temperature control to locally create a temperature difference, especially in the low temperature region. By simultaneously using the blower 270 as in this embodiment, the reaction tube 203 (processing chamber 201) and the heater 206 are cooled while the power control of the heater 206 is performed, and thus temperature control to locally create a temperature difference by the power control of the heater 206 can be easily performed even in the low temperature region, and a sufficient temperature deviation can be provided.

[0065] For example, in the above-mentioned embodiment, the heater 206 and the blower 270 are used simultaneously to adjust the temperature in the processing chamber 201 during at least a part of the period of step C. However, the present disclosure is not limited to such an embodiment. For example, the temperature in the processing chamber 201 may be adjusted using only the blower 270 during at least a part of the period of step C. That is, the power supply to the heater 206 may be stopped (set to OFF state) during at least a part of the period of step C. In this case, for example, the temperature control using the heater 206 may be started or resumed at the timing when the temperature of any region in the processing chamber 201 drops to a predetermined temperature or lower. In this embodiment, the same effect as the above-mentioned embodiment can be obtained.

[0066] For example, in the above-mentioned embodiment, the case where the temperature in the processing chamber 201 is adjusted in step C so that the second distribution is uniform (the second deviation is zero) in the arrangement direction of the wafers 200 has been described as an example. However, the present disclosure is not limited to such an embodiment. For example, the second distribution may have a second deviation that is smaller than the first deviation that is not zero. In this embodiment as well, the same effect as in the above-mentioned embodiment can be obtained.

[0067] Although not specifically described in the above embodiment, when the first temperature is set (controlled) to be higher than the second temperature, step E of increasing the temperature inside the processing chamber 201 while a plurality of wafers 200 are accommodated in the processing chamber 201 after step D, and step F of unloading the plurality of wafers 200 from the processing chamber 201 after step E may be further performed. In this embodiment, the same effect as the above embodiment can be obtained. Furthermore, in this embodiment, the wafer 200 can be unloaded from the processing chamber 201 after removing moisture generated during the processing of step D from the wafer 200 and the processing chamber 201. Also, the time required for increasing the temperature inside the processing chamber 201 after unloading the wafer 200 can be shortened.

[0068] For example, in the above embodiment, the case where cooling by the blower 270 is started after the inside of the processing chamber 201 is evacuated to a vacuum has been described as an example. However, the present disclosure is not limited to such an embodiment. For example, cooling by the blower 270 may be started before the evacuation of the inside of the processing chamber 201 is completed. In this embodiment, the same effect as the above embodiment can be obtained.

[0069] For example, in the above embodiment, the cooling gas taken in through the supply pipe 251 is circulated in the outer peripheral space of the processing chamber 201, and then discharged by the blower 270, thereby lowering the temperature inside the processing chamber 201. However, the present disclosure is not limited to such an embodiment. For example, the flow direction of the cooling gas may be reversed from that of the above embodiment. That is, the cooling gas taken in through the exhaust pipe 254 may be circulated in the outer peripheral space of the processing chamber 201, and then discharged by the blower provided on the supply pipe 241 side, thereby lowering the temperature inside the processing chamber 201. In this embodiment, the same effect as the above embodiment can be obtained.

[0070] It is preferable that the recipes used for each process are prepared individually according to the process contents, and are recorded and stored in the storage device 121c via an electric communication line or an external storage device 123. Then, when starting each process, it is preferable that the CPU 121a appropriately selects an appropriate recipe according to the process contents from among the multiple recipes recorded and stored in the storage device 121c. This makes it possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility using a single substrate processing device. It is also possible to reduce the burden on the operator, and to quickly start each process while avoiding operational errors.

[0071] The above-mentioned recipes may not only be newly created, but may also be prepared by modifying an existing recipe that has already been installed in the substrate processing apparatus. When modifying a recipe, the modified recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe has been recorded. Also, an existing recipe that has already been installed in the substrate processing apparatus may be directly modified by operating the input / output device 122 provided in the existing substrate processing apparatus.

[0072] In the above-mentioned embodiment, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been described. The present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to, for example, a case where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. In addition, in the above-mentioned embodiment, an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described. The present disclosure is not limited to the above-mentioned embodiment, and can be suitably applied to, for example, a case where a film is formed using a substrate processing apparatus having a cold-wall type processing furnace.

[0073] When using these substrate processing apparatuses, each process can be performed according to the same process procedures and under the same process conditions as in the above-described aspects and modifications, and the same effects as in the above-described aspects and modifications can be obtained.

[0074] The above-mentioned aspects and modifications may be used in appropriate combination. The processing procedures and processing conditions in such a case may be the same as those of the above-mentioned aspects and modifications. [Explanation of symbols]

[0075] 200 wafers (substrates) 201 Processing Room a 1st distribution b Second distribution

Claims

1. (a) adjusting a temperature in a processing chamber configured to be able to accommodate a plurality of substrates, so that a temperature distribution in the processing chamber in an arrangement direction of the plurality of substrates becomes a first distribution in which at least a portion of the processing chamber has a first temperature; (b) loading the plurality of substrates into the processing chamber while maintaining a temperature distribution in the arrangement direction in the processing chamber at the first distribution; (c) after (b), adjusting a temperature in the processing chamber in the arrangement direction so that the temperature distribution in the processing chamber becomes a second distribution in which the at least a portion in the processing chamber has a second temperature different from the first temperature; (d) after (c), processing the plurality of substrates in a state in which the temperature distribution in the arrangement direction in the processing chamber is the second distribution; A substrate processing method comprising the steps of:

2. The first temperature is higher than the second temperature. The method for processing a substrate according to claim 1 .

3. a minimum temperature value in the first distribution is higher than a maximum temperature value in the second distribution; The substrate processing method according to claim 2 .

4. a minimum temperature value in the first distribution is lower than a maximum temperature value in the second distribution; The substrate processing method according to claim 2 .

5. (a) adjusting a temperature in the processing chamber so that the first distribution has a first deviation in the arrangement direction; The method for processing a substrate according to claim 1 .

6. (c) adjusting a temperature in the processing chamber so that the second distribution has a second deviation smaller than the first deviation or is uniform in the arrangement direction; The substrate processing method according to claim 5 .

7. the first distribution is set such that a time from the start of (b) until the temperature distribution in the arrangement direction in the processing chamber converges to the second distribution is shorter than a time in (a) when the temperature in the processing chamber is adjusted so that the temperature distribution in the arrangement direction in the processing chamber becomes the second distribution. The substrate processing method according to claim 5 .

8. the first distribution is set so that a maximum value of a temperature deviation in the arrangement direction in the processing chamber occurring after (b) is smaller than a case in which the temperature in the processing chamber is adjusted in (a) so that the temperature distribution in the arrangement direction in the processing chamber becomes the second distribution. The substrate processing method according to claim 5 .

9. the first distribution is set according to a characteristic of a change in temperature distribution in the arrangement direction in the processing chamber, which occurs due to the loading of the plurality of substrates in (b); The substrate processing method according to claim 5 .

10. (b) a temperature change characteristic in the processing chamber with respect to time elapsed after the start of loading of the plurality of substrates differs depending on a position in the arrangement direction; The substrate processing method according to claim 9 .

11. the first temperature is greater than the second temperature; In (a) and (c), a temperature inside the processing chamber is adjusted so that the first distribution and the second distribution are each uniform in the arrangement direction. The method of claim 1 .

12. In step (b), the plurality of substrates are carried in along the arrangement direction from an opening side of a processing vessel that defines the processing chamber; In the first distribution, a temperature on the opening side is higher than a temperature on the closed end side of the processing vessel. The method of claim 1 .

13. In (a) and (c), a temperature inside the processing chamber is adjusted by controlling at least one of a heater that heats the processing chamber and a cooling device that cools the processing chamber. The method of claim 1 .

14. (a) adjusting the temperature inside the processing chamber by simultaneously using the heater and the cooling device during at least a part of the period; The method of claim 13.

15. (c) adjusting the temperature inside the processing chamber by simultaneously using the heater and the cooling device during at least a part of the period; The method of claim 13.

16. In (a), at least one of the heater and the cooling device is controlled so that a temperature distribution in the arrangement direction in the processing chamber becomes the first distribution at a start time of (b). The method of claim 13.

17. the first temperature is greater than the second temperature; (e) after (d), increasing the temperature of the processing chamber while the plurality of substrates are accommodated in the processing chamber; (f) after (e), removing the plurality of substrates from the processing chamber. The method of claim 1 .

18. (a) adjusting a temperature in a processing chamber configured to be able to accommodate a plurality of substrates, so that a temperature distribution in the processing chamber in an arrangement direction of the plurality of substrates becomes a first distribution in which at least a portion of the processing chamber has a first temperature; (b) loading the plurality of substrates into the processing chamber while maintaining a temperature distribution in the arrangement direction in the processing chamber at the first distribution; (c) after (b), adjusting a temperature in the processing chamber in the arrangement direction so that the temperature distribution in the processing chamber becomes a second distribution in which the at least a portion in the processing chamber has a second temperature different from the first temperature; (d) after (c), processing the plurality of substrates in a state in which the temperature distribution in the arrangement direction in the processing chamber is the second distribution; A method for manufacturing a semiconductor device having the above structure.

19. (a) adjusting a temperature in a processing chamber configured to be able to accommodate a plurality of substrates so that a temperature distribution in the processing chamber in an arrangement direction of the plurality of substrates becomes a first distribution in which at least a portion of the processing chamber has a first temperature; (b) loading the plurality of substrates into the processing chamber while maintaining a temperature distribution in the arrangement direction within the processing chamber at the first distribution; (c) after (b), adjusting a temperature in the processing chamber in the arrangement direction so that the temperature distribution in the processing chamber becomes a second distribution in which the at least a portion in the processing chamber has a second temperature different from the first temperature; (d) after (c), processing the plurality of substrates in a state in which a temperature distribution in the arrangement direction in the processing chamber is set to the second distribution; A program for causing a computer to execute the above in a substrate processing apparatus.

20. A processing chamber configured to accommodate a plurality of substrates; a substrate transport mechanism configured to transport the substrates into the processing chamber; a heater for heating the inside of the processing chamber; (a) adjusting a temperature in the processing chamber in a direction in which the plurality of substrates are arranged so as to have a first temperature distribution in at least a portion of the processing chamber; (b) loading the plurality of substrates into the processing chamber while maintaining a temperature distribution in the arrangement direction in the processing chamber at the first distribution; (c) after (b), adjusting a temperature in the processing chamber in the arrangement direction so that the temperature distribution in the processing chamber becomes a second distribution in which the at least a portion in the processing chamber has a second temperature different from the first temperature; (d) after (c), a process of processing the plurality of substrates in a state in which the temperature distribution in the arrangement direction in the processing chamber is the second distribution; A control unit configured to be able to control the substrate transport mechanism and the heater to perform the above-mentioned A substrate processing apparatus comprising:

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