Substrate processing method, semiconductor device manufacturing method, program, and substrate processing apparatus.

Abstract

To provide a technique of being able to suppress a change in gas state.SOLUTION: A substrate processing device includes a process chamber to process substrates, a buffer chamber configured to supply gas to the process chamber and having a buffer space, a gas supply unit that supplies the gas into the process chamber through the buffer chamber, a heating unit that heats the buffer space, a pressure measurement unit that can measure the pressure in the buffer space, and a control unit configured to, if the pressure in the buffer space measured by the pressure measurement unit is out of a preset range, cause the heating unit to regulate the temperature in the buffer space.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. [Background technology]

[0002] 2. Description of the Related Art One step in the manufacturing process of a semiconductor device involves supplying a processing gas to a substrate in a processing chamber to process a film on the substrate (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-148256 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned apparatus, the gas supplied from the supply pipe may undergo adiabatic expansion due to the widening of the space in the buffer chamber, causing a drop in the gas temperature. This may cause the gas supplied from the supply pipe to liquefy in the buffer chamber, resulting in the generation of particles in the processing space.

[0005] The present disclosure provides a technique capable of suppressing changes in the state of a gas. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, a processing chamber for processing a substrate; a buffer chamber for supplying gas to the processing chamber and having a buffer space; a gas supply unit that supplies a gas to the processing chamber through the buffer chamber; A heating unit that heats the buffer space; a pressure measuring unit capable of measuring the pressure in the buffer space; a control unit configured to adjust a temperature of the buffer space by the heating unit when the pressure of the buffer space measured by the pressure measuring unit falls outside a preset range; The present invention provides a technique having the following features: Effect of the Invention

[0007] According to the present disclosure, it is possible to suppress changes in the state of gas. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure. [Diagram 2] FIG. 2 is a block diagram illustrating a configuration of a control unit of the substrate processing apparatus according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] (1) Configuration of the substrate processing device Hereinafter, one embodiment of the present disclosure will be described mainly with reference to Figures 1 and 2. Note that all of the drawings used in the following description are schematic, and the dimensional relationships of the elements, the ratios of the elements, etc. shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationships of the elements, the ratios of the elements, etc. between multiple drawings do not necessarily match.

[0010] FIG. 1 is a cross-sectional view of a substrate processing apparatus 100 for carrying out a manufacturing method of a semiconductor device. The substrate processing apparatus 100 includes a container 202. The container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A processing space 205 for processing a substrate S such as a silicon wafer, and a transfer space 206 through which the substrate S passes when being transferred to the processing space 205 are formed in the container 202. The container 202 is made up of an upper container 202a and a lower container 202b. A partition plate 208 is provided between the upper container 202a and the lower container 202b. The structure constituting the processing space 205 is called a processing chamber 201. In this embodiment, the processing chamber 201 is mainly made up of a dispersion plate 234 and a substrate mounting table 212, which will be described later.

[0011] A substrate loading / unloading port 148 adjacent to a gate valve 149 is provided on the side of the lower vessel 202b, and the substrate S is moved between the substrate loading / unloading port 148 and a transfer chamber (not shown). A plurality of lift pins 207 are provided on the bottom of the lower vessel 202b. Furthermore, the lower vessel 202b is grounded.

[0012] A substrate support part 210 for supporting a substrate S is disposed in the processing space 205. The substrate support part 210 mainly includes a substrate mounting surface 211 on which the substrate S is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on its surface, and a heater 213 as a first heating part provided within the substrate mounting table 212. The heater 213 is also called a substrate mounting table heater. The substrate mounting table 212 is provided with through holes 214 through which the lift pins 207 pass at positions corresponding to the lift pins 207.

[0013] A temperature measuring device 216 that measures the temperature of the heater 213 is provided within the substrate mounting table 212. The temperature measuring device 216 is connected to a temperature measuring unit 221 via a wiring 222.

[0014] A wiring 220 for supplying power is connected to the heater 213. The heater 213 is connected to a heater control unit 223 via the wiring 220.

[0015] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the container 202, and is further connected to a lifting mechanism 218 outside the container 202.

[0016] By operating the lifting mechanism 218 to lift and lower the shaft 217 and the substrate mounting table 212, the substrate mounting table 212 can lift and lower the substrate S mounted on the substrate mounting surface 211. The lower end of the shaft 217 is surrounded by a bellows 219, which keeps the inside of the processing space 205 airtight.

[0017] When transporting the substrate S, the substrate mounting table 212 is lowered to a position where the substrate mounting surface 211 faces the substrate loading / unloading port 148, and when processing the substrate S, the substrate mounting table 212 is raised until the substrate S is at a processing position within the processing space 205, as shown in FIG. 1.

[0018] A shower head 230 serving as a gas dispersion mechanism is provided at the upper portion (upstream side) of the processing space 205. A through hole 231a is provided in a lid 231 of the shower head 230. The through hole 231a communicates with a common gas supply pipe 242 described later. A buffer chamber 232a having a buffer space 232 therein is provided in the shower head 230. A gas is supplied to the processing space 205 through the buffer space 232. The shower head 230 will be described in detail later.

[0019] A flow straightening plate 270 is provided in the buffer space 232. The flow straightening plate 270 has a conical shape with a diameter increasing from the gas inlet 241 toward the radial direction of the substrate S. The lower end of the edge of the flow straightening plate 270 is configured to be located on the outer periphery of the substrate S relative to the end of the substrate S. The flow straightening plate 270 is configured to efficiently move the supplied gas in the direction of the dispersion plate 234 described later.

[0020] The upper vessel 202a has a flange, and a support block 233 is placed and fixed on the flange. The support block 233 has a flange 233a, and a dispersion plate 234 having a plurality of gas supply holes is placed and fixed on the flange 233a. Furthermore, the lid 231 is fixed to the upper surface of the support block 233.

[0021] Next, a gas supply system 240 serving as a gas supply unit will be described. A first gas supply pipe 243a, a second gas supply pipe 244a, a third gas supply pipe 245a, and a fourth gas supply pipe 248a are connected to a common gas supply pipe 242.

[0022] The first gas supply pipe 243a is provided with, in this order from the upstream direction, a first gas source 243b, a mass flow controller (MFC) 243c which is a flow rate controller (flow rate control section), and a valve 243d which is an opening / closing valve.

[0023] The first gas source 243b is a source of a first gas containing a first element (also called a "first element-containing gas"). The first element-containing gas is a source gas, that is, one of the process gases.

[0024] The first gas supply pipe 243a, the MFC 243c, and the valve 243d mainly constitute a first gas supply system 243. The first gas supply system 243 may include a first gas source 243b.

[0025] The second gas supply pipe 244a is provided with a second gas source 244b, an MFC 244c, and a valve 244d in this order from the upstream direction.

[0026] The second gas source 244b is a source of a second gas containing a second element (hereinafter, also referred to as a "second element-containing gas"). The second element-containing gas is one of the process gases. The second element-containing gas may be considered as a reaction gas or a modifying gas.

[0027] When the substrate S is processed with the second gas in a plasma state, a remote plasma unit 244e may be provided on the second gas supply pipe 244a.

[0028] A second gas supply system 244 (also referred to as a reactive gas supply system) is mainly composed of the second gas supply pipe 244a, the MFC 244c, and the valve 244d. The second gas supply system 244 may include a remote plasma unit 244e. The second gas supply system 244 may also include a second gas source 244b.

[0029] The third gas supply pipe 245a is provided with a third gas source 245b, an MFC 245c, and a valve 245d in this order from the upstream direction.

[0030] The third gas source 245b is an inert gas source.

[0031] The third gas supply pipe 245a, the MFC 245c, and the valve 245d mainly constitute a third gas supply system 245. The third gas supply system 245 may include a third gas source 245b.

[0032] The inert gas supplied from the inert gas source 245b acts as a purge gas for purging gas remaining in the container 202 and the shower head 230 in the substrate processing step.

[0033] The fourth gas supply pipe 248a is provided with a fourth gas source 248b, an MFC 248c, and a valve 248d in this order from the upstream direction.

[0034] The fourth gas source 248b is a cleaning gas source.

[0035] The fourth gas supply pipe 248a, the MFC 248c, and the valve 248d mainly constitute a fourth gas supply system 248. The fourth gas supply system 248 may include a fourth gas source 248b.

[0036] The cleaning gas supplied from the fourth gas source 248b is made into a plasma state when cleaning the inside of the processing chamber 201 and the shower head 230. The cleaning gas in the plasma state removes by-products remaining in the container 202 and the shower head 230.

[0037] An exhaust pipe 262 communicates with the processing space 205 via an exhaust buffer structure 261. The exhaust buffer structure 261 is provided in a circular shape so as to surround the outer periphery of the substrate S. In this embodiment, it is disposed between the partition plate 208 and the upper vessel 202a.

[0038] The exhaust pipe 262 is connected to the upper vessel 202a on the upper side of the exhaust buffer structure 261 so as to communicate with the processing space 205 via the exhaust buffer structure 261. An APC (Auto Pressure Controller) 266, which is a pressure controller that controls the inside of the processing space 205 to a predetermined pressure, is provided in the exhaust pipe 262. The APC 266 has a valve body (not shown) whose opening degree can be adjusted, and adjusts the conductance of the exhaust pipe 262 in response to an instruction from a controller 400 described later.

[0039] A valve 267 is provided on the exhaust pipe 262 upstream of the APC 266. Furthermore, a vacuum pump 269 is provided downstream of the exhaust pipe 262. The vacuum pump 269 exhausts the atmosphere in the processing space 205 through the exhaust pipe 262. The exhaust pipe 262, the valve 267, and the APC 266 are collectively referred to as a first exhaust system. The first exhaust system may include the vacuum pump 269.

[0040] Next, the detailed structure of the showerhead 230 will be described. A heater 313 serving as a second heating unit is provided inside the lid 231. The heater 313 is also called a shower head heater.

[0041] A wiring 320 for supplying power is connected to the heater 313. A heater control unit 323 is connected to the heater 313 via the wiring 320. The heater 313 is configured to heat the buffer space 232 in the shower head 230 in response to an instruction from the heater control unit 323.

[0042] The common gas supply pipe 242 is provided with a pressure measuring unit 301 as a first pressure measuring unit capable of measuring the pressure inside the common gas supply pipe 242. Furthermore, the buffer space 232 is provided with a pressure measuring unit 302 as a second pressure measuring unit capable of measuring the pressure in the buffer space 232. Furthermore, the buffer space 232 is provided with a temperature measuring device 316 capable of measuring the temperature of the buffer space 232. The temperature measuring device 316 is connected to a temperature measuring unit 317 via a wiring 322.

[0043] An exhaust pipe 303 is connected to the buffer space 232. The exhaust pipe 303 is located at the upper side of the buffer space 232 and is connected to the lid 231. The exhaust pipe 303 is provided with a valve 304, an APC 305 as a pressure adjustment unit that is a pressure controller that controls the buffer space 232 to a predetermined pressure, and a vacuum pump 306, in this order from the upstream direction. The vacuum pump 306 exhausts the atmosphere in the buffer space 232 through the exhaust pipe 303. The exhaust pipe 303, the valve 304, and the APC 305 are collectively referred to as a second exhaust system. The second exhaust system may include the vacuum pump 306.

[0044] The APC 305 has a valve element whose opening is adjustable, and adjusts the conductance of the exhaust pipe 303 in response to an instruction from a controller 400, which will be described later.

[0045] (controller) The substrate processing apparatus 100 includes a controller 400 as a control unit (control means) that controls the operations of each unit of the substrate processing apparatus 100.

[0046] 2 shows an outline of the controller 400. The controller 400 is configured as a computer equipped with a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a storage device 403 as a storage unit, and an I / O port 404. The RAM 402, the storage device 403, and the I / O port 404 are configured to be able to exchange data with the CPU 401 via an internal bus 405.

[0047] The controller 400 is configured so that an input / output device 281 configured as, for example, a keyboard, and an external storage device 282 can be connected thereto.

[0048] Data detected by each monitor unit is displayed on the display device 284. In the present embodiment, the display device 284 is described as a separate component from the input / output device 281, but this is not limiting. For example, if the input / output device also functions as a display screen such as a touch panel, the input / output device 281 and the display device 284 may be a single component.

[0049] The storage device 403 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. In the storage device 403, a process recipe in which the procedures and conditions of the substrate processing described later are described, a recipe program as a control program for controlling the operation of the substrate processing apparatus to realize the process recipe, tables, etc. are readably stored. In addition, a setting range of a pressure value and a temperature value related to the buffer space 232 described later is recorded. Note that the recipe program is a combination of procedures in the substrate processing process described later so as to cause the controller 400 to execute the procedures and obtain a predetermined result, and functions as a program. Hereinafter, the recipe program, the control program, etc. are collectively referred to simply as a program. Note that, when the word program is used in this specification, it may include only a process recipe, only a control program, or both. In addition, the RAM 402 is configured as a memory area (work area) in which the programs, data, etc. read by the CPU 401 are temporarily stored.

[0050] The I / O port 404 is connected to each component of the substrate processing apparatus 100, such as the gate valve 149, the lifting mechanism 218, the APC 266, 305, the vacuum pump 269, 306, the MFC 243c, 244c, 245c, 248c, the valves 243d, 244d, 245d, 248d, 267, 304, the heater control units 223, 323, the pressure measurement units 301, 302, the temperature measurement units 221, 317, etc.

[0051] The CPU 401 is configured to read and execute a control program from the storage device 403, and also to read a recipe program from the storage device 403 in response to input of an operation command from the input / output device 281, etc. The CPU 401 is configured to be able to control the opening and closing operation of the gate valve 149, the lifting and lowering operation of the lifting mechanism 218, the opening and closing operation of the APCs 266 and 305, the on / off control of the vacuum pumps 269 and 306, the flow rate adjustment operation of the MFCs 243c, 244c, 245c, and 248c, the opening and closing operation of the valves 243d, 244d, 245d, 248d, 267, and 304, the temperature control of the heater 213 by the heater control unit 223, the temperature control of the heater 313 by the heater control unit 323, the pressure detection operation by the pressure measurement units 301 and 302, the temperature detection operation by the temperature measurement units 221 and 317, etc., in accordance with the contents of the read recipe program.

[0052] Specifically, the controller 400 transmits control information to the heater control unit 223 based on temperature information measured by the temperature measurement unit 221. The heater control unit 223 controls the heater 213 with reference to the received control information.

[0053] Furthermore, the controller 400 transmits control information to the heater control unit 323 based on the temperature information of the buffer space 232 measured by the temperature measurement unit 317. The heater control unit 323 controls the heater 313 with reference to the received control information.

[0054] Furthermore, the controller 400 transmits control information to the heater control unit 323 based on the pressure information measured by the pressure measuring units 301 and 302. The heater control unit 323 controls the heater 313 with reference to the received control information.

[0055] Furthermore, the controller 400 adjusts the opening degree of the APC 305 based on the temperature information of the buffer space 232 measured by the temperature measuring unit 317 to control the pressure in the buffer space 232 .

[0056] The controller 400 according to the present embodiment can be configured by installing the program in the computer using an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 282 storing the above-mentioned program. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 282. For example, the program may be supplied without going through the external storage device 282 by using a communication means such as the Internet or a dedicated line. The storage device 403 and the external storage device 282 are configured as computer-readable recording media on which the program is recorded. Hereinafter, these are collectively referred to simply as recording media. In this specification, when the term recording medium is used, it may include only the storage device 403 alone, only the external storage device 282 alone, or both.

[0057] (2) Substrate processing Next, as one step in a semiconductor manufacturing process, a step of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-mentioned configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by a controller 400.

[0058] In this specification, the term "substrate" may mean "the substrate itself" or "a laminate (assembly) of the substrate and a predetermined layer, film, etc. formed on its surface" (i.e., the substrate includes the predetermined layer, film, etc. formed on the surface). In addition, in this specification, the term "surface of the substrate" may mean "the surface (exposed surface) of the substrate itself" or "the surface of the predetermined layer, film, etc. formed on the substrate, i.e., the outermost surface of the substrate as a laminate."

[0059] Therefore, in this specification, when it is stated that "a predetermined gas is supplied to a substrate," it may mean "a predetermined gas is supplied directly to the surface (exposed surface) of the substrate itself," or "a predetermined gas is supplied to a layer or film, etc., formed on the substrate, i.e., to the outermost surface of the substrate as a laminate." In addition, when it is stated that "a predetermined layer (or film) is formed on a substrate," it may mean "a predetermined layer (or film) is formed directly on the surface (exposed surface) of the substrate itself," or "a predetermined layer (or film) is formed on the layer or film, etc., formed on the substrate, i.e., on the outermost surface of the substrate as a laminate."

[0060] In this specification, the use of the word "wafer" is the same as the use of the word "substrate", and in that case, the "substrate" can be replaced with the "wafer" in the above explanation.

[0061] (Substrate loading and placement process: S10) The substrate mounting table 212 is lowered to the transfer position of the substrate S, whereby the lift pins 207 penetrate the through holes 214 of the substrate mounting table 212. As a result, the lift pins 207 protrude a predetermined height from the surface of the substrate mounting table 212. Next, the gate valve 149 is opened, and the substrate S is loaded into the processing chamber using the substrate transfer machine, and the substrate S is transferred onto the lift pins 207. As a result, the substrate S is supported in a horizontal position on the lift pins 207 protruding from the surface of the substrate mounting table 212.

[0062] After the substrate S is loaded into the container 202, the substrate transfer machine is retreated to the outside of the container 202, and the gate valve 149 is closed to hermetically seal the inside of the container 202. Thereafter, the substrate mounting table 212 is raised to mount the substrate S on the substrate mounting surface 211 provided on the substrate mounting table 212.

[0063] When the substrate S is loaded into the container 202, it is preferable to supply an inert gas from the third gas supply system 245 into the container 202 while exhausting the inside of the container 202 by the first exhaust system. That is, it is preferable to supply an inert gas into the container 202 by opening at least the valve 245d of the third gas supply system 245 while evacuating the inside of the container 202 by operating the vacuum pump 269 and opening the APC 266. This makes it possible to suppress the intrusion of particles into the container 202 and the adhesion of particles onto the substrate S. Also, the vacuum pump 269 is kept in an operating state at least from the substrate loading / placing step (S10) until the substrate unloading step (S16) described later is completed.

[0064] When the substrate S is placed on the substrate placement table 212, power is supplied to the heater 213 embedded inside the substrate placement table 212, and the surface of the substrate S is controlled to a predetermined temperature. At this time, the temperature of the heater 213 is adjusted by a heater control unit 223 controlling the power supply to the heater 213 based on temperature information detected by a temperature measurement unit 221.

[0065] Furthermore, at least during the period from the first gas supply step (S11) to the end of the determination step (S15) described below, power is supplied to the heater 313 embedded in the lid 231, and the temperature of the buffer space 232 is controlled to be within a preset range. At this time, the temperature of the heater 313 is adjusted by the heater control unit 323 controlling the power supply to the heater 313 based mainly on pressure information detected by the pressure measurement unit 302, and the temperature of the buffer space 232 is adjusted to be within the preset range.

[0066] That is, the controller 400 transmits control information to the heater control unit 323 based on the pressure information of the buffer space 232 measured by the pressure measurement unit 302. The heater control unit 323 controls the heater 313 with reference to the received control information. Specifically, for example, when the pressure value of the buffer space 232 measured by the pressure measurement unit 302 falls outside a preset range, the controller 400 controls the heater control unit 323 to adjust the temperature of the buffer space 232. More specifically, for example, when the pressure value of the buffer space 232 measured by the pressure measurement unit 302 falls below a preset range, the controller 400 controls the heater control unit 323 to increase the temperature of the buffer space 232. In other words, the controller 400 controls the heater control unit 323 to control the heater 313 to adjust the temperature of the buffer space 232 measured by the temperature measurement unit 317 so that the pressure of the buffer space 232 falls within the preset range. At this time, that is, at least the temperature of the buffer space 232 during substrate processing is adjusted to be higher than the temperature at which the gas liquefies and lower than the processing temperature of the substrate S. This makes it possible to suppress the liquefaction of the gas while suppressing the degree of thermal decomposition of the gas supplied to the buffer space 232 compared to during substrate processing, thereby preventing the generation of particles. In this specification, the processing temperature means the temperature of the substrate S or the temperature inside the processing chamber 201, and the processing pressure means the pressure inside the processing chamber 201. Moreover, the processing time means the time the processing continues. These terms also apply to the following explanations.

[0067] That is, the temperature of the buffer space 232 is controlled so that the pressure of the buffer space 232 is within a pressure range that does not cause liquefaction of the gas. By preventing the temperature of the gas in the buffer space 232 from decreasing in this manner, it is possible to prevent the gas supplied from the supply pipe from re-liquefying in the buffer space. As a result, the amount of gas supplied to the processing chamber 201 is stabilized, and the process reproducibility is improved. Furthermore, by preventing liquefaction in the shower head 230 in this manner, it is possible to prevent particles from being generated in the shower head 230.

[0068] In addition, when the temperature value of the buffer space 232 measured by the temperature measuring unit 317 falls outside a preset range, the controller 400 may control the heater 313 via the heater control unit 323 to adjust the temperature of the buffer space 232. More specifically, when the temperature value of the buffer space 232 measured by the temperature measuring unit 317 falls below a preset range, for example, the controller 400 controls the heater control unit 323 to increase the temperature of the buffer space 232. At this time, the temperature of the buffer space 232 may be adjusted to be higher than the temperature at which the gas liquefies and lower than the processing temperature of the substrate S.

[0069] (First gas supply step: S11) When the substrate mounting table 212 is moved to the substrate processing position, the atmosphere is exhausted from the processing chamber 201 via the exhaust pipe 262, and the pressure inside the processing chamber 201 is adjusted.

[0070] When the temperature of the buffer space 232 and the temperature of the substrate S reach the respective predetermined temperatures while adjusting to a predetermined pressure, the valve 243d is opened to start supplying the first gas into the processing space 205 through the common gas supply pipe 242 and the shower head 230. At this time, the MFC 243c is adjusted so that the flow rate of the first gas becomes a predetermined flow rate. At this time, the atmosphere is exhausted through the exhaust pipe 262. In this process, the valve 245d is opened, and an inert gas is supplied from the third gas supply pipe 245a. In this way, the first gas is prevented from entering the third gas supply system 245. The supplied first gas forms a first layer on the substrate S. After a predetermined time has elapsed since the start of the supply of the first gas, the valve 243d is closed to stop the supply of the first gas.

[0071] (Purge process: S12) Next, an inert gas is supplied from the third gas supply pipe 245a to purge the processing space 205. As a result, the first gas that could not be bonded to the substrate S in the first gas supply process S11 is removed from the processing space 205 via the exhaust pipe 262.

[0072] (Second gas supply step: S13) Next, the valve 244d is opened to start supplying the second gas into the processing space 205 via the remote plasma unit 244e, the common gas supply pipe 242, and the shower head 230. At this time, the MFC 244c is adjusted so that the flow rate of the second gas becomes a predetermined flow rate. Also in this process, the valve 245d is opened and an inert gas is supplied from the third gas supply pipe 245a. In this manner, the second gas is prevented from entering the third gas supply system 245.

[0073] The second gas made into a plasma state in the remote plasma unit 244e is supplied into the processing space 205 via the common gas supply pipe 242 and the shower head 230. The supplied second gas reacts with the first layer on the substrate S. Then, the already formed first layer is modified by the plasma of the second gas. As a result, a second layer is formed on the substrate S.

[0074] After a predetermined time has elapsed since the supply of the second gas started, the valve 244d is closed to stop the supply of the second gas.

[0075] (Purge process: S14) Next, purging is performed in the same manner as in the above-mentioned purging step S12.

[0076] (Determination step: step S15) The above-mentioned steps S11 to S14 constitute one cycle, and by performing this cycle a predetermined number of times (n times, where n is 1 or an integer of 2 or more), a thin film with a desired thickness is formed on the substrate S.

[0077] (Substrate removal process: step S16) The substrate mounting table 212 is lowered, and the substrate S is supported on the lift pins 207 protruding from the surface of the substrate mounting table 212. Thereafter, the gate valve 149 is opened, and the substrate S is transferred out of the container 202 using the substrate transfer machine. Thereafter, when the substrate processing process is to be terminated, the supply of the inert gas from the third gas supply system 245 into the container 202 is stopped.

[0078] [Second aspect] Next, the second embodiment will be described. In the second embodiment, the temperature information of the buffer space 232 is mainly used to suppress liquefaction of gas in the buffer space 232. That is, in the second embodiment, the pressure of the buffer space 232 is adjusted so that the temperature of the buffer space 232 is within a range that does not cause liquefaction of gas at least during the period from the above-mentioned first gas supplying step (S11) to the end of the determining step (S15). Below, the differences will be mainly described, and the same configuration as the first embodiment will not be described.

[0079] In the second aspect, at least during the period from the above-mentioned first gas supply process (S11) to the end of the determination process (S15), the controller 400 is configured to adjust the pressure of the buffer space 232 by the APC 305 when the temperature of the buffer space 232 measured by the temperature measurement unit 317 falls outside a preset range.

[0080] Specifically, the controller 400 detects the temperature of the buffer space 232 by the temperature measuring unit 317. The controller 400 is configured to be able to adjust the pressure in the buffer space 232 by the APC 305 when the temperature of the buffer space 232 is out of a preset range. More specifically, the controller 400 increases the pressure of the buffer space 232 by the APC 305 when, for example, the temperature of the buffer space 232 measured by the temperature measuring unit 317 falls below the preset range. In other words, the APC 305 adjusts the pressure of the buffer space 232 measured by the pressure measuring unit 302 so that the temperature of the buffer space 232 falls within the preset range. This makes it possible to suppress liquefaction of the gas supplied to the buffer space 232. At this time, that is, the temperature of the buffer space 232 at least during substrate processing is adjusted to be higher than the temperature at which the gas liquefies and lower than the processing temperature of the substrate S. In this embodiment, the same effects as those of the above embodiment can be obtained.

[0081] [Third aspect] Next, a third embodiment will be described. In the third embodiment, the liquefaction of gas in the buffer space 232 is suppressed mainly by using pressure information inside and outside the buffer space 232. That is, in the third embodiment, the temperature of the buffer space 232 is adjusted so that the pressure difference between the inside and outside of the buffer space 232 is within a range that does not cause liquefaction of gas at least during the period from the above-mentioned first gas supplying step (S11) to the end of the determining step (S15).

[0082] In the third embodiment, at least during the period from the first gas supply step (S11) to the end of the determination step (S15), the controller 400 detects the differential pressure between the inside and outside of the buffer space 232 by the pressure measurement unit 301 and the pressure measurement unit 302. That is, the controller 400 calculates the differential pressure between the inside and outside of the buffer space 232, which is the difference between the pressure value in the common gas supply pipe 242 measured by the pressure measurement unit 301 and the pressure value in the buffer space 232 measured by the pressure measurement unit 302. The controller 400 is configured to adjust the temperature in the buffer space 232 by controlling the heater 313 by the heater control unit 323 when the differential pressure between the inside and outside of the buffer space 232 falls outside a preset range.

[0083] Specifically, when the difference between the pressure value in the common gas supply pipe 242 measured by the pressure measuring unit 301 and the pressure value in the buffer space 232 measured by the pressure measuring unit 302 is greater than a preset range, the controller 400 controls the heater 313 by the heater control unit 323 to increase the temperature of the buffer space 232. At this time, that is, the temperature of the buffer space 232 during substrate processing is adjusted to be higher than the temperature at which the gas liquefies and lower than the processing temperature of the substrate S. In this embodiment, the same effects as those of the above embodiment can be obtained.

[0084] [Other aspects] Although each aspect has been specifically described above, the present invention is not limited to the above-described aspects, and various modifications are possible without departing from the spirit of the present invention.

[0085] For example, in each of the above-mentioned embodiments, the heater 313 for heating the buffer space 232 is provided on the lid 231. However, the present invention is not limited to this, and the heater 313 may be provided on the current plate 270.

[0086] Also, for example, in each of the above-mentioned aspects, the film formation process is taken as an example of the process performed by the substrate processing apparatus, but the present aspect is not limited thereto. That is, in addition to the film formation process exemplified in each aspect, the present aspect can also be applied to film formation processes other than the thin film exemplified in each aspect. Furthermore, the specific content of the substrate processing is not important, and the present aspect can be applied to other substrate processing such as annealing, diffusion, oxidation, nitridation, lithography, etc., in addition to the film formation process. Furthermore, the present aspect can also be applied to other substrate processing such as annealing, etching, oxidation, nitridation, exposure, coating, drying, heating, and plasma-utilizing processing. These devices may also be mixed. Furthermore, it is possible to replace a part of the configuration of one aspect with the configuration of another aspect, and it is also possible to add a configuration of another aspect to the configuration of one aspect. Furthermore, it is also possible to add, delete, or replace a part of the configuration of each aspect with another configuration.

[0087] It is preferable that the recipes used for each process are prepared individually according to the process contents and stored in the storage device 403 via an electric communication line or the external storage device 282. When starting each process, it is preferable that the CPU 401 appropriately selects an appropriate recipe according to the process contents from among the multiple recipes stored in the storage device 403. This makes it possible to form films of various film types, composition ratios, film qualities, and film thicknesses with good reproducibility using a single substrate processing apparatus. It is also possible to reduce the burden on the operator and quickly start each process while avoiding operational errors.

[0088] The above-mentioned recipe is not limited to being newly created, but may be prepared by modifying an existing recipe that has already been installed in the substrate processing apparatus. When modifying a recipe, the modified recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe is recorded. Also, an existing recipe that has already been installed in the substrate processing apparatus may be directly modified by operating the input / output device 281 provided in the existing substrate processing apparatus.

[0089] The above-mentioned aspects may be used in appropriate combination. The processing procedures and processing conditions in such a case may be the same as those of the above-mentioned aspects. [Explanation of symbols]

[0090] S-substrate 201 Processing Room 232 Buffer Space 240 Gas Supply System 301, 302 Pressure measurement section 313 Heater 400 Controller

Claims

1. A step of adjusting the pressure or temperature of the buffer space in the buffer chamber when the temperature or pressure of the buffer space falls outside a preset range, The process involves supplying gas to a processing chamber for processing the substrate via the buffer chamber to process the substrate, A substrate processing method having the following characteristics.

2. In the aforementioned adjustment process, If the temperature of the buffer space falls outside a preset range, the pressure of the buffer space is adjusted. The substrate processing method according to claim 1.

3. In the aforementioned adjustment process, If the pressure value in the buffer space falls outside a preset range, the temperature of the buffer space is adjusted. The substrate processing method according to claim 2.

4. In the aforementioned adjustment process, If the pressure in the buffer space falls outside a preset range, the temperature of the buffer space is adjusted. The substrate processing method according to claim 1.

5. In the aforementioned adjustment process, If the temperature of the buffer space falls below a preset range, the pressure of the buffer space is increased. The substrate processing method according to claim 1.

6. In the aforementioned adjustment process, If the pressure in the buffer space falls below a preset range, the temperature of the buffer space is increased. The substrate processing method according to claim 1.

7. The substrate processing method according to claim 1, wherein the processing step is performed after the adjustment step.

8. The aforementioned processing step is: The system includes a first gas supply step for supplying a first gas to the processing chamber, and a second gas supply step for supplying a second gas to the processing chamber. The substrate processing method according to claim 1, wherein the adjustment step is included in the processing step, and the adjustment step is performed in parallel with the first gas supply step and the second gas supply step.

9. The substrate processing method according to claim 1, wherein, at least in the processing step, the temperature of the buffer space is lower than the processing temperature of the substrate.

10. The substrate processing method according to claim 1, wherein in the adjustment step, the temperature of the buffer space is adjusted to be within a pressure range that does not cause liquefaction of the gas.

11. The substrate processing method according to claim 1, wherein the processing step is performed by setting the temperature of the buffer space to a temperature that suppresses the liquefaction of the gas and is suppressed to a degree lower than that of thermal decomposition on the substrate.

12. In the aforementioned adjustment process, The system detects the pressure difference between the inside and outside of the buffer chamber, and adjusts the temperature of the buffer space if the pressure difference falls outside a preset range. The substrate processing method according to claim 1.

13. It is equipped with a gas supply unit that communicates with the buffer chamber and supplies gas to the buffer chamber, In the adjustment process described above, if the difference between the pressure in the gas supply unit and the pressure in the buffer space falls outside a preset range, the temperature of the buffer space is adjusted. The substrate processing method according to claim 1.

14. The gas supply unit includes a gas supply pipe that communicates with the buffer space. The substrate processing method according to claim 13, wherein the pressure in the gas supply section is the pressure in the gas supply pipe.

15. The gas supply unit includes a gas supply pipe that communicates with the buffer space. The substrate processing method according to claim 13, wherein the pressure in the gas supply section is the differential pressure between the pressure in the gas supply pipe and the pressure in the buffer chamber.

16. The processing chamber is located downstream of the buffer chamber. The substrate processing method according to claim 1.

17. A step of adjusting the pressure or temperature of the buffer space in the buffer chamber when the temperature or pressure of the buffer space falls outside a preset range, The process involves supplying gas to a processing chamber for processing the substrate via the buffer chamber to process the substrate, A method for manufacturing a semiconductor device having [a certain feature].

18. A procedure for adjusting the pressure or temperature of the buffer space in the buffer chamber when the temperature or pressure of the buffer space falls outside a preset range, A procedure for processing a substrate by supplying gas to a processing chamber for processing the substrate via the buffer chamber, A program that causes a circuit board processing unit to execute commands via a computer.

19. A processing room for processing substrates, A buffer chamber having a buffer space, A gas supply unit that supplies gas to the processing chamber via the buffer chamber, A heating unit for heating the buffer space, If the temperature or pressure of the buffer space within the buffer chamber falls outside a preset range, the pressure or temperature of the buffer space is adjusted. A control unit configured to supply gas to a processing chamber for processing the substrate via the buffer chamber, and A substrate processing apparatus having

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