Coated article with TFMG support layer

The coated article, featuring a TFMG layer and a top metal or carbon-containing layer, addresses environmental concerns and durability issues in existing coating methods by offering improved corrosion resistance and mechanical properties.

JP2025068621APending Publication Date: 2025-04-28VAPOR TECHNOLOGIES INC
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Patent Information

Application Number
JP2024179935
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-10-16
Filing Date
2024-10-15
Publication Date
2025-04-28

AI Technical Summary

Technical Problem

Existing coating methods, such as electroplating, raise environmental concerns and result in corrosion resistance and durability issues due to the columnar microstructure of thin film processes in PVD layers.

Method used

A coated article comprising a substrate with a doped or undoped thin film metallic glass (TFMG) layer, optionally with a leveling primer layer, and a top layer of metal-containing or carbon-containing layers deposited by physical vapor deposition.

Benefits of technology

The solution provides enhanced corrosion resistance, durability, and environmental friendliness by leveraging the unique properties of thin film metallic glasses, such as high strength, hardness, and low surface energy.

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Abstract

To provide a coated article including a doped TFMG layer and / or an undoped TFMG layer.SOLUTION: A coated article includes a doped TFMG layer and / or an undoped TFMG layer. The doped TFMG layer and / or the undoped TFMG layer is arranged over a substrate and optionally contacts the substrate. A top layer is arranged over the TFMG layer and optionally contacts the TFMG layer. The top layer includes a metal-containing layer and / or a carbon-containing layer. The coated article may include the doped TFMG layer and the undoped TFMG layer with a leveling primer layer.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 544,254, filed October 16, 2023, the entire disclosure of which is incorporated herein by reference.

[0002] In at least one embodiment, the invention relates to a coated article comprising one or more thin film metallic glass layers. [Background technology]

[0003] Electroplating is a coating process used to apply corrosion-resistant and decorative metal or metal alloy coatings to various objects. Although electroplating is effective, it raises some environmental concerns. Therefore, physical vapor deposition (PVD) layers of metals or metal compounds are used to replace Ni in traditional Ni-Cr electroplated stacks used in plumbing, door hardware, and automotive trim applications. The corrosion resistance and durability of PVD layers (e.g., pure Ni) are usually inferior to traditional Ni electroplating due to the columnar microstructure of the thin-film process.

[0004] Thus, there is a need for improved, environmentally friendly coating methods for applying corrosion-resistant and decorative metal coatings. [Prior art documents] [Non-patent literature]

[0005] [Non-Patent Document 1] Pakman Yiu, Wahyu Diyatmika, Niklas Bonninghoff et al., "Thin film metallic glasses: Properties, applications, and future", Journal of Applied Physics, vol.127, no.030901, 2020, DOI:10.1063 / 1.5122884 Summary of the Invention [Means for solving the problem]

[0006] In at least one embodiment, a coated article is provided. The coated article includes a substrate and a doped thin film metallic glass (TFMG) layer and / or an undoped thin film metallic glass (TFMG) layer disposed on the substrate. A top layer is disposed on and optionally in contact with the doped and / or undoped TFMG layers. Advantageously, the top layer includes a metal-containing layer or a carbon-containing layer.

[0007] In another embodiment, the coated article includes an undoped TFMG layer, a doped TFMG layer, and a leveling primer layer.

[0008] In another aspect, a method for producing a coated article is provided, the method comprising depositing a doped and / or undoped thin film metallic glass (TFMG) layer on a substrate, and depositing a top layer on the doped and / or undoped TFMG layer by physical vapor deposition. Advantageously, the top layer comprises a metal-containing layer or a carbon-containing layer.

[0009] The foregoing summary is illustrative only and is not intended to be in any way limiting. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features will become apparent by reference to the drawings and the following detailed description.

[0010] For a further understanding of the nature, objects, and advantages of the present disclosure, reference should be made to the following detailed description and read in conjunction with the following drawings, in which like reference numerals represent like elements and in which: [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic cross-sectional view of a coated article including a TFMG layer and a top layer. [Diagram 2] 1 is a schematic cross-sectional view of a coated article including a TFMG layer, a doped TFMG layer, and a top layer. [Diagram 3] 1 is a schematic cross-sectional view of a coated article including a leveling primer layer, a TFMG layer, and a top layer. [Figure 4] 1 is a schematic cross-sectional view of a coated article including a leveling primer layer, a TFMG layer, a doped TFMG layer, and a top layer. [Figure 5A] 1 is a schematic flow diagram illustrating a method of making a coated article. [Figure 5B] 1 is a schematic flow diagram illustrating a method of making a coated article. [Figure 5C] 1 is a schematic flow diagram illustrating a method of making a coated article. [Figure 5D] 1 is a schematic flow diagram illustrating a method of making a coated article. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Reference will now be made in detail to presently preferred configurations, embodiments, and methods of the present invention, which constitute the best mode for practicing the invention currently known to the inventors. The figures are not necessarily to scale. However, it should be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various alternative forms. Thus, the specific details disclosed herein should not be construed as limiting, but as a representative basis for any aspect of the invention and / or as a representative basis for teaching those skilled in the art to employ the invention in various ways.

[0013] Unless in the examples or expressly indicated otherwise, all numerical values ​​indicating amounts of materials or conditions of reaction and / or use in this description should be understood to be modified by the word "about" in describing the broadest scope of the invention. Generally, practice within the stated numerical limits is preferred. Also, unless otherwise indicated, percent, "parts", and ratio values ​​are by weight. The term "polymer" includes "oligomer", "copolymer", "terpolymer", and the like. The molecular weight provided for any polymer refers to the weight average molecular weight unless otherwise indicated. When a group or class of materials is described as suitable or preferred for a given purpose related to the present invention, it is meant that mixtures of any two or more members of that group or class are equally suitable or preferred. Descriptions of components in chemical terms refer to the components when added in any combination specified in the description and do not necessarily exclude chemical interactions between the components of the mixed mixture. The initial definition of an acronym or other abbreviation applies to all subsequent uses in this specification of the same abbreviation and applies mutatis mutandis to normal grammatical variations of the abbreviation originally defined. Unless otherwise specified, measurements of a property are determined by the same techniques as previously or later referenced for the same property.

[0014] It is also to be understood that this invention is not limited to the specific examples and methods described below, as specific components and / or conditions may, of course, vary. Further, the terminology used herein is used only for the purpose of describing particular examples of the invention, and is not intended to be limiting in any way.

[0015] It should also be noted that, as used in the specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. For example, reference to an element in the singular is intended to include the plural elements.

[0016] The term "comprising" is synonymous with "including," "having," "containing," or "featuring." These terms are inclusive and open-ended and do not exclude additional, unrecited elements or method steps.

[0017] The phrase "consisting of" excludes any element, step, or ingredient not specified in the claim. If the phrase appears in a clause in the body of a claim rather than immediately following the preamble, the phrase limits only the elements recited in that clause and does not exclude other elements from the claim as a whole.

[0018] The phrase "consisting essentially of" limits the scope of a claim to the specified materials or steps and those that do not materially affect the basic and novel characteristics of the claimed subject matter.

[0019] With respect to the terms "comprising," "consisting of," and "consisting essentially of," when one of these three terms is used in this specification, the presently disclosed and claimed subject matter may include use of either of the other two terms.

[0020] The phrase "comprising" means "including" or "comprising." Typically, this phrase is used to indicate that an object is formed from a material.

[0021] It should also be understood that integer ranges explicitly include all intervening integers. For example, the integer range 1 to 10 explicitly includes 1, 2, 3, 4, 5, 6, 7, 8, 9, and 10. Similarly, the range 1 to 100 includes 1, 2, 3, 4....97, 98, 99, 100. Similarly, when any range is sought, the intervening numbers that are increments of the difference between the upper and lower limits divided by 10 can be taken as alternative upper or lower limits. For example, if the range is 1.1 to 2.1, the following numbers 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, and 2.0 can be selected as the lower or upper limits. In the specific examples described herein, concentrations, temperatures, and reaction conditions (e.g., pressure, pH, etc.) can be practiced by rounding the indicated values ​​plus or minus 50 percent to three significant digits. In a refinement, concentrations, temperatures, and reaction conditions (e.g., pressure, pH, etc.) may be implemented by rounding the indicated values ​​plus or minus 30 percent to three significant digits of the values ​​provided in the examples. In another refinement, concentrations, temperatures, and reaction conditions (e.g., pH, etc.) may be implemented by rounding the indicated values ​​plus or minus 10 percent to three significant digits of the values ​​provided in the examples.

[0022] Abbreviation: "ABS:acrylonitrile butadiene styrene" stands for acrylonitrile butadiene styrene. "At. %" means atomic percent. "HiPIMS: high-power impulse magnetron sputtering" stands for high-power impulse magnetron sputtering. "PVD" means physical vapor deposition. "TFMG" means thin film metallic glass.

[0023] The term "thin film metallic glass" refers to metallic materials that are amorphous and lack the crystalline structure typically found in conventional metals. The amorphous or non-crystalline structure of thin film metallic glasses provides them with unique properties such as high strength, hardness, and corrosion resistance.

[0024] "Atomic percent" refers to the ratio of the total number of atoms of a particular element in an alloy or compound, expressed as a percentage of the total number of atoms in the mixture. In other words, atomic percent describes the ratio of atoms of a particular element to the total number of atoms of all elements present in a material.

[0025] Referring to FIG. 1, a schematic cross-sectional view of a coated article is provided. 1 The semiconductor device includes a substrate 12. A doped thin film metallic glass (TFMG) 16 and / or an undoped TFMG layer 14 is disposed on, and optionally in contact with, the substrate 12. A top layer 20 is disposed on, and optionally in contact with, the undoped TFMG layer 14. Advantageously, the top layer includes a metal-containing layer and / or a carbon-containing layer.

[0026] In a variation such as that shown in FIG. 2, a doped TFMG layer is interposed between the undoped TFMG layer and the top layer. 2The substrate 12 includes a substrate 12. An undoped TFMG layer 14 is disposed on, and optionally in contact with, the substrate 12. A doped TFMG layer 16 is disposed on, and optionally in contact with, the undoped TFMG layer 14. A top layer 20 is disposed on, and optionally in contact with, the doped TFMG layer 16. The doped TFMG layer 16 is a TFMG layer that includes a dopant to modify properties such as stability, hardness, corrosion resistance, etc. In general, the TFMG layer includes a TFMG composition and a dopant as described herein. In this context, a dopant is a foreign element that is intentionally added in small amounts to modify the properties of the TFMG. In a refinement, the dopant can be present in an amount of 0.01 weight percent to 5 weight percent of the total weight of the doped TFMG layer. Alternatively, the dopant can be present in an amount of 0.5 atomic percent to 20 atomic percent. In some refinements, the dopant can be present in an amount of at least 0.2 atomic percent, 0.5 atomic percent, 1 atomic percent, 2 atomic percent, 3 atomic percent, or 5 atomic percent, and up to 20 atomic percent, 18 atomic percent, 15 atomic percent, 10 atomic percent, 8 atomic percent, 5 atomic percent, or 3 atomic percent.

[0027] In a variation such as that shown in FIG. 3, a leveling primer layer is interposed between the substrate and the undoped TFMG layer. 3 includes a substrate 12. A leveling primer layer 24 is disposed over, and optionally in contact with, the substrate 12. An undoped TFMG layer 14 is disposed over, and optionally in contact with, the leveling primer layer 24. A top layer 20 is disposed over, and optionally in contact with, the undoped TFMG layer 14. As noted above, the top layer may include a metal-containing layer or a carbon-containing layer.

[0028] In a variation such as that shown in FIG. 4, a leveling primer layer is interposed between the substrate and the undoped TFMG layer, and a doped TFMG layer is interposed between the undoped TFMG layer and the metal layer. 4 The semiconductor substrate 10 includes a substrate 12. A leveling primer layer 24 is disposed over, and optionally in contact with, the substrate 12. An undoped TFMG layer 14 is disposed over, and optionally in contact with, the leveling primer layer 24. A doped TFMG layer 16 is disposed over, and optionally in contact with, the undoped TFMG layer 14. A top layer 20 is disposed over, and optionally in contact with, the doped TFMG layer 16. As noted above, the top layer may include a metal-containing layer or a carbon-containing layer.

[0029] With reference to Figures 1, 2, 3, and 4, each of the coated articles includes a top layer that is a metal-containing layer or a carbon-containing layer. In a refinement, the top layer is a metal layer, a metal compound layer, or a metal alloy layer. The metal layer, metal alloy layer, or metal compound layer may be formed by a physical vapor deposition technique, such as cathodic arc deposition, magnetron sputtering, evaporation, and the like. In a further refinement, the top layer includes metallic chromium, metallic nickel, or alloys thereof. In another refinement, the top layer includes a member selected from the group consisting of ZrN, ZrCN, ZrO2, ZrOC, diamond-like carbon (DLC), and combinations thereof. Typically, the top layer has a thickness of about 0.2 microns to 1 micron. In some refinements, the top layer has a thickness of at least 0.1 μm (microns), 0.2 μm (microns), 0.3 μm (microns), 0.4 μm (microns), or 0.5 μm (microns) and at most 2 μm (microns), 1.5 μm (microns), 1 μm (microns), 0.7 μm (microns), or 0.6 μm (microns).

[0030] 1, 2, 3, and 4, each of the coated articles includes an undoped TFMG layer and / or an optionally doped TFMG layer. Typically, the undoped TFMG layer 14 and the optionally doped TFMG layer 16 each individually have a thickness of about 0.5 to 10 μm. In some refinements, the undoped TFMG layer 14 and the optionally doped TFMG layer 16 each individually have a thickness of at least 0.3 μm, 0.5 μm, 1 μm, 1.5 μm, 2 μm, 3 μm, 4 μm, or 5 μm, and up to 10 μm, 9 μm, 8 μm, 7 μm, 6 μm, or 5 μm.

[0031] In another aspect, the undoped TFMG layer 14 and the optionally doped TFMG layer 16 individually include a base element, such as zirconium, copper, nickel, titanium, molybdenum, or a combination thereof. In this context, a base element is an element having the greatest atomic percentage. In a refinement, the undoped TFMG layer 14 and the optionally doped TFMG layer 16 include a base element and an alloying element selected from the group consisting of copper, aluminum, titanium, silicon, nickel, boron, tungsten, chromium, and combinations thereof. In a refinement, the undoped TFMG layer 14 and the optionally doped TFMG layer 16 individually are zirconium-based (e.g., include zirconium as a predominant element). Typically, zirconium-based TMFGs have about 50 to 65 atomic % zirconium. In further refinements, undoped TFMG layer 14 and optionally doped TFMG layer 16 individually comprise a zirconium copper alloy, typically having 50 to 65 atomic percent zirconium and 15 to 30 percent copper, with the remainder being additional alloying elements or dopants. Examples of zirconium-based systems include Zr 60 Cu 24 Al 11 Zr-Cu-Al-N compositions such as Ni5, Zr-Ti-B-Si compositions, and Zr46 Ti 26 Ni 28 %. It is understood that the formula subscripts may be implemented within 20%, 10%, 5%, or 1% of the indicated values. In a refinement, the Zr-Cu-Al-N composition includes 50-65 atomic % zirconium, 15-30 atomic % copper, 5-15 atomic % aluminum, and nickel in amounts of 2-10 atomic % nickel. In a refinement, the Zr-Ti-B-Si composition includes 50-60 atomic % zirconium, 10-30 atomic % titanium, 1-10 atomic % boron, and 5-15 atomic % silicon. In a refinement, the Zr-Ti-Ni composition includes 40-60 atomic % zirconium, 10-30 atomic % titanium, and 5-20 atomic % nickel. In another refinement, the undoped TFMG layer 14 and the optionally doped TFMG layer 16 are, individually, Zr-B based. In a refinement, the Zr-B system includes 60 to 90 atomic percent zirconium, 5 to 40 percent boron, with the remainder being additional alloying elements or dopants. In a refinement, the Zr-B system is combined with titanium and silicon to form the Zr-Ti-B-Si composition. In a further refinement, the Zr-Ti-B-Si composition includes 50-65 atomic percent zirconium, 5-15 atomic percent boron, 10-30 atomic percent titanium, and 5-15 atomic percent silicon.

[0032] In another embodiment, undoped TFMG layer 14 and optionally doped TFMG layer 16 are individually cobalt-based, such as a Mo-Co-B composition. In a refinement, the Mo-Co-B composition includes 40-60 atomic percent molybdenum, 20-40 atomic percent cobalt, and 5-20 atomic percent boron, with the remainder being additional alloying elements or dopants.

[0033] With reference to FIG. 1, FIG. 2, FIG. 3, and FIG. 4, examples of dopants include, but are not limited to, nitrogen (N), oxygen (O), carbon (C), silicon (Si), and the like. Nitrogen is often introduced as a dopant to improve mechanical properties such as hardness and wear resistance. The strong electronegativity of nitrogen makes the structure of TFMGs more dense and tightly packed, which reduces the atomic spacing and increases hardness and thermal stability. Nitrogen also contributes to improving corrosion resistance in humid or saline environments. In a modified example, nitrogen is present in an amount of 1 to 10 atomic %. Oxygen is typically used as a dopant to increase the corrosion resistance of TFMGs. By forming an oxide layer or introducing oxygen into an amorphous matrix, TFMGs become more resistant to oxidation and environmental degradation. Oxygen also helps to passivate the surface to reduce reactivity in aggressive environments. In a modified example, oxygen is present in an amount of 1 to 5 atomic %. Carbon doping can significantly improve hardness and mechanical strength. This carbon doping is especially common in applications where wear resistance is important, such as cutting tools or high friction environments. Carbon can also contribute to improved tribological properties by reducing friction. In a refinement, silicon is present in an amount of 0.5 to 5 atomic %. Silicon is often added to improve the heat and oxidation resistance of TFMGs. Silicon forms a protective oxide layer on the surface, making the material more stable in high temperature and corrosive environments. Si-doped TFMGs are often used in high temperature applications or in applications requiring long term stability in harsh environments. In a refinement, silicon is present in an amount of 5 to 20 atomic %. In another embodiment, top layer 20 includes a metal-containing layer or a carbon-containing layer, as described in more detail below.

[0034] Further details regarding TFMGs utilized in multilayer coatings can be found in the reference Pakman Yiu, Wahyu Diyatmika, Niklas Bonninghoff et al., “Thin film metallic glasses: Properties, applications, and future,” Journal of Applied Physics, vol. 127, no. 030901, 2020, DOI: 10.1063 / 1.5122884, which is incorporated by reference in its entirety. TFMGs offer a unique combination of smooth surfaces, excellent hardness, corrosion resistance, and low surface energy, making them ideal for multilayer coatings requiring durability, aesthetics, and protection from environmental degradation.

[0035] The composition of TFMGs can be customized to meet the needs of a particular application. The flexibility of TFMGs' composition allows properties to be optimized to suit various applications, such as enhanced thermal stability in high temperature environments and improved biocompatibility for use in medical devices. In addition to their functional benefits, TFMGs offer an environmentally friendly alternative to traditional electroplating techniques that often involve hazardous chemicals and pose environmental risks. As described in more detail below, TFMGs include common elements such as zirconium (Zr), titanium (Ti), copper (Cu), nickel (Ni), and aluminum (Al). For example, Zr-based TFMGs exhibit excellent resistance to wear and corrosion, making them suitable for environments exposed to moisture or chemicals. Their smooth surfaces also reduce friction, making them useful in applications where low surface energy is important to prevent fouling.

[0036] TFMGs also exhibit mechanical properties such as high hardness, often exceeding 9 GPa, that enable them to act as effective protective layers in multilayer coatings. These properties remain stable even after heat treatment, making TFMGs suitable for applications involving heat-intensive processes.

[0037] Furthermore, TFMG forms highly adherent layers on a variety of substrates, improving the durability and longevity of the overall coating. The amorphous nature of TFMG acts as a barrier, preventing degradation at the interface by inhibiting the diffusion of elements between the layers.

[0038] Overall, the versatility of TFMGs, due to their tunable mechanical, thermal, and surface properties, makes them suitable for a wide range of applications, from industrial protective coatings to biomedical devices.

[0039] 1, 2, 3, and 4, each of the coated articles includes a substrate. Although the coated articles are not limited by the type of substrate, illustrative substrates are comprised of brass, stainless steel, aluminum, zinc, or a polymer (e.g., ABS).

[0040] 3 and 4, each of the coated articles includes a leveling primer layer 24. The leveling primer layer 24 can be a copper metal layer, a siloxane coating, or a polymer coating. In refinements, the leveling primer layer 24 has a thickness of about 1 to 25 microns. In some refinements, the leveling primer layer has a thickness of at least 0.2, 0.5, 1, 2, 3, or 5 microns, at least 25, 20, 15, 10, 8, or 7 microns.

[0041] In another aspect, for a wide variety of colors and improved durability, the top layer 20 is a PVD / PE-CVD coating. In some refinements, the metal-containing layer includes metallic chromium, metallic nickel, or alloys thereof. In variations, the metal-containing layer includes a member selected from the group consisting of ZrN, ZrCN, ZrO2, ZrOC, diamond-like carbon (DLC), and combinations thereof.

[0042] In another aspect, a method for manufacturing the coated article of Figures 1, 2, 3, and 4 is provided. Figures 5A, 5B, 5C, and 5D provide a flow diagram illustrating that a method for manufacturing a coated article is provided. Referring to Figure 5A, in step a), a doped thin-film metallic glass layer 16 or an undoped thin-film metallic glass layer 14 is deposited on and optionally in contact with a substrate 12. Typically, the doped thin-film metallic glass layer 16 and / or the undoped thin-film metallic glass layer 14 are deposited by physical vapor deposition. In step b), a top layer 20 is deposited on and optionally in contact with the doped thin-film metallic glass layer 16 or the undoped thin-film metallic glass layer 14 by physical vapor deposition to form a coated article 10. 1 Typically, the doped thin film metallic glass layer 16 and / or the undoped thin film metallic glass layer 14 are deposited by physical vapor deposition.

[0043] 5B , in step a), an undoped thin film metallic glass layer 14 is deposited on, and optionally in contact with, the substrate 12. In step b), a doped thin film metallic glass layer 16 is deposited on, and optionally in contact with, the undoped thin film metallic glass layer 14. In step c), a top layer 20 is deposited by physical vapor deposition on, and optionally in contact with, the doped thin film metallic glass layer 16 to form the coated article 10. 2 Typically, the doped thin film metallic glass layer 16 and / or the undoped thin film metallic glass layer 14 are deposited by physical vapor deposition.

[0044] 5C, in step a), a leveling primer layer 24 is deposited on, and optionally in contact with, the substrate 12. In step b), an undoped thin film metallic glass layer 14 is deposited on, and optionally in contact with, the leveling primer layer 24. In step c), a top layer 20 is deposited on, and optionally in contact with, the undoped thin film metallic glass layer 14 by physical vapor deposition. Typically, the undoped thin film metallic glass layer 14 is deposited by physical vapor deposition.

[0045] Referring to FIG. 5D, in step a), a leveling primer layer 24 is deposited on, and optionally in contact with, the substrate 12. In step b), an undoped thin-film metallic glass layer 14 is deposited on, and optionally in contact with, the leveling primer layer 24. In step c), a doped thin-film metallic glass layer 16 is deposited on, and optionally in contact with, the undoped thin-film metallic glass layer 14. In step d), a top layer 20 is deposited on, and optionally in contact with, the doped thin-film metallic glass layer 16 by physical vapor deposition. Typically, the doped thin-film metallic glass layer 16 and / or the undoped thin-film metallic glass layer 14 are deposited by physical vapor deposition.

[0046] With reference to Figures 5A, 5B, 5C, and 5D, examples of physical vapor deposition (PVD) techniques include magnetron sputtering or cathodic arc deposition, which allow for the creation of a smooth, defect-free surface that contributes to superior hardness and corrosion resistance. As noted above, the top layer includes a metal-containing layer and / or a carbon-containing layer. Examples of physical vapor deposition include magnetron sputtering, high-power impulse magnetron sputtering, cathodic arc deposition, or a combination thereof.

[0047] In another embodiment, undoped and doped TFMG layers can be deposited in a standard PVD system by conventional magnetron sputtering, HiPIMS, cathodic arc deposition, or a combination thereof. The target material used in the PVD system can be an alloy manufactured to a specific desired alloy composition, or the film can be formed by co-deposition (e.g., co-sputtering) from individual pure metal or alloy metal targets (e.g., Zr-Cu formed by simultaneously magnetron sputtering Cu and cathodic arc deposition of Zr). Additionally, doped TFMG layers can be formed by introducing reactive gases (N2, O2, CH4) at controlled rates during the deposition process to create the desired composition. Further details regarding the properties and manufacturing methods of TFMG layers can be found in Pakman Yiu, Wahyu Diyatmika, Niklas Bonninghoff et al., “Thin film metallic glasses: Properties, applications, and future,” Journal of Applied Physics, vol. 127, no. 030901, 2020, DOI: 10.1063 / 1.5122884, the entire disclosure of which is incorporated herein by reference.

[0048] The above coatings may be applied directly to substrates including, but not limited to, brass, stainless steel, aluminum, zinc, and ABS. Substrates may be treated with coatings such as electroless Cu plating, siloxane coatings, and polymer coatings for surface leveling and adhesion promotion.

[0049] In another aspect, the coated articles of Figures 1, 2, 3, and 4 are applicable to many applications. The coated articles can be used for medical instruments, including surgical blades and needles. The coatings improve the sharpness, durability, and non-stickiness of the instruments, reduce the force required for insertion, and minimize tissue damage. The coatings can be used as diffusion barriers in electronics, since TFMGs are effective as diffusion barriers in semiconductors and electronic devices. Since TFMGs are amorphous, the coatings can be used for corrosion resistance. The coated articles can be used in consumer products due to their smooth surface, hardness, and non-stickiness. In other applications, the substrate can be a flexible polymer substrate. The coated articles with flexible substrates can be used in flexible electronics.

[0050] Although exemplary embodiments have been described above, it is not intended that these embodiments describe all possible forms of the present invention. Rather, the words used herein are words of description rather than limitation, and it is understood that various changes may be made without departing from the spirit and scope of the present invention. Moreover, features of various implementation embodiments may be combined to form further embodiments of the present invention.

Claims

1. A substrate; a doped and / or undoped thin film metallic glass (TFMG) layer disposed on the substrate; a top layer disposed on the doped TFMG layer and / or the undoped TFMG layer, the top layer comprising a metal-containing layer and / or a carbon-containing layer; A coated article comprising:

2. The coated article of claim 1 , wherein the top layer is a metal layer, or a metal alloy layer, or a metal compound layer.

3. The coated article of claim 1 , wherein the top layer comprises chromium metal, nickel metal, or an alloy thereof.

4. 10. The coated article of claim 1, wherein the top layer comprises a member selected from the group consisting of ZrN, ZrCN, ZrO2, ZrOC, diamond-like carbon (DLC), and combinations thereof.

5. 10. The coated article of claim 1, wherein the top layer has a thickness of from about 0.2 to 1 micron.

6. The coated article of claim 1 , wherein the TFMG layer has a thickness of from about 0.5 to 10 microns.

7. The coated article of claim 1 , wherein the TFMG layer comprises a base element selected from the group consisting of zirconium, copper, nickel, titanium, molybdenum, and combinations thereof.

8. 8. The coated article of claim 7, wherein the TFMG layer further comprises an alloying element selected from the group consisting of copper, aluminum, titanium, silicon, nickel, boron, tungsten, chromium, and combinations thereof.

9. The coated article of claim 1 , wherein the TFMG layer comprises zirconium.

10. 10. The coated article of claim 9, wherein the TFMG layer is a zirconium copper alloy having 50 to 65 at. % zirconium and 15 to 30 at. % copper, with the remainder being additional alloying elements or dopants.

11. The coated article of claim 1 , wherein the doped TFMG layer is interposed between the undoped TFMG layer and the top layer.

12. The coated article of claim 11 , wherein the doped TFMG layer has a thickness of from about 0.5 to 10 μm (microns).

13. The coated article of claim 11 , wherein the doped TFMG layer comprises a TFMG composition and a dopant.

14. 14. The coated article of claim 13, wherein the dopant is selected from the group consisting of N, C, O, and combinations thereof.

15. The coated article of claim 1 further comprising a leveling primer layer interposed between said substrate and said undoped TFMG layer.

16. 16. The coated article of claim 15, wherein the leveling primer layer is a copper metal layer, a siloxane coating, or a polymer coating.

17. 15. The coated article of claim 14, wherein the leveling primer layer has a thickness of from about 1 to 25 microns.

18. 10. The coated article of claim 1, further comprising a leveling primer layer interposed between the substrate and the undoped TFMG layer, and a doped TFMG layer interposed between the undoped TFMG layer and the top layer.

19. The coated article of claim 1 , wherein the substrate is comprised of brass, stainless steel, aluminum, zinc, or a polymer.

20. 1. A method for producing a coated article, comprising the steps of: depositing a doped and / or undoped thin film metallic glass (TFMG) layer on a substrate; depositing a top layer on the doped TFMG layer and / or the undoped TFMG layer by physical vapor deposition, the top layer comprising a metal-containing layer or a carbon-containing layer; A method comprising:

21. 21. The method of claim 20, wherein the doped TFMG layer and / or the undoped TFMG layer are formed by magnetron sputtering, high power impulse magnetron sputtering, cathodic arc deposition, or a combination thereof.

22. The method of claim 20, wherein the top layer is a metal layer, or a metal alloy layer, or a metal compound layer.

23. The method of claim 22 , wherein the metal layer is formed by cathodic arc deposition.

24. The method of claim 20 , wherein the top layer comprises chromium metal, nickel metal, or an alloy thereof.

25. 21. The method of claim 20, wherein the top layer comprises a member selected from the group consisting of ZrN, ZrCN, ZrO2, ZrOC, diamond-like carbon (DLC), and combinations thereof.