Plasma processing device

Abstract

To improve uniformity of plasma processing.SOLUTION: A plasma processing device comprises a chamber, a window member, a gas introduction port, and an antenna. The chamber accommodates a substrate. The window member constitutes an upper part of the chamber. The gas introduction port is installed on either a side wall of the chamber or the window member, and supplies a gas to the inside of the chamber. The antenna is installed upward of the chamber via the window member, and is formed from an electro-conductive material and is formed in a linear shape. The antenna irradiates the inside of the chamber with RF electric power, thereby causing the gas supplied to the inside of the chamber to be plasmatized. The antenna has a first coil and a plurality of second coils. The first coil is supplied with RF electric power. The second coils are formed in the same shape, and are arranged in multiple around the first coil in rotational symmetry around a center axis of the first coil. A variable capacitance capacitor is connected one each at the respective ends of the second coils.SELECTED DRAWING: Figure 8

Description

[Technical field]

[0001] Various aspects and embodiments of the present disclosure relate to plasma processing apparatus. [Background technology]

[0002] In plasma processes, process uniformity is an important factor in improving yield. With the recent progress in miniaturization of semiconductor devices and the increase in diameter of semiconductor substrates, process uniformity is becoming increasingly important. The following Patent Document 1 discloses a technology for controlling the distribution of plasma in a chamber by providing multiple antenna coils at positions facing the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5227245 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a plasma processing apparatus capable of improving the uniformity of plasma processing. [Means for solving the problem]

[0005] One aspect of the present disclosure is a plasma processing apparatus including a chamber, a window member, a gas inlet, and an antenna. The chamber accommodates a substrate. The window member constitutes an upper portion of the chamber. The gas inlet is provided in at least one of a sidewall of the chamber and the window member, and supplies gas into the chamber. The antenna is provided above the chamber via the window member, and is formed linearly from a conductive material. The antenna converts the gas supplied into the chamber into plasma by radiating RF (Radio Frequency) power into the chamber. The antenna has a first coil and a plurality of second coils. RF power is supplied to the first coil. The second coils are formed in the same shape, and a plurality of them are arranged around the first coil in rotational symmetry with respect to the central axis of the first coil. A variable capacitance capacitor is connected to one end of each of the second coils. Effect of the Invention

[0006] Various aspects and embodiments of the present disclosure can improve the uniformity of plasma processing. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating an example of a plasma processing system according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a plan view showing an example of the shape and arrangement of the antenna. [Diagram 3] FIG. 3 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 4] FIG. 4 is a plan view showing another example of the shape and arrangement of the second coil. [Diagram 5] FIG. 5 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 6] FIG. 6 is a plan view showing another example of the shape and arrangement of the second coil. [Figure 7] FIG. 7 is a connection diagram showing an example of a circuit configuration of an antenna in the first embodiment. [Figure 8] FIG. 8 is a connection diagram showing an example of a circuit configuration of an antenna in the second embodiment. [Figure 9] FIG. 9 is a connection diagram showing an example of a circuit configuration of an antenna in the third embodiment. [Figure 10] FIG. 10 is a diagram showing an example of the distance between the end of the second coil and the window member. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the disclosed plasma processing apparatus will be described in detail with reference to the drawings. Note that the disclosed plasma processing apparatus is not limited to the following embodiments.

[0009] The present disclosure provides a technique that can further improve the uniformity of plasma processing.

[0010] (First embodiment) [Configuration of Plasma Processing System 100] A configuration example of the plasma processing system 100 will be described below. FIG. 1 is a schematic cross-sectional view showing an example of the plasma processing system 100 according to an embodiment of the present disclosure. The plasma processing system 100 includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a window member 101 constituting an upper portion of the plasma processing chamber 10. In this embodiment, the window member 101 is made of a dielectric material such as quartz or ceramic. The window member 101 may be made of a metal (conductor) such as aluminum, or a semiconductor such as silicon. The plasma processing apparatus 1 also includes a substrate support unit 11, a gas introduction unit, and an antenna 50. The substrate support unit 11 is disposed in the plasma processing chamber 10. The antenna 50 is provided above the plasma processing chamber 10 via the window member 101, and is linearly formed of a conductive material such as copper. The antenna 50 is disposed rotationally symmetrically about the central axis X. "Rotational symmetry" is a type of symmetry that characterizes a figure, and when a figure is rotated (360 / n) degrees around a certain center, where n is an integer equal to or greater than 2, the figure overlaps with itself. The antenna 50 converts a gas supplied into the plasma processing chamber 10 into plasma by radiating RF power into the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by a window member 101, a sidewall 102 of the plasma processing chamber 10, and a substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a substrate support surface 111a which is a central region for supporting the substrate W, and a ring support surface 111b which is an annular region for supporting the ring assembly 112. The substrate W is sometimes called a wafer. The ring support surface 111b of the main body 111 surrounds the substrate support surface 111a of the main body 111 in a plan view. The substrate W is disposed on the substrate support surface 111a of the main body 111, and the ring assembly 112 is disposed on the ring support surface 111b of the main body 111 so as to surround the substrate W on the substrate support surface 111a of the main body 111.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base includes a conductive member. The conductive member of the base 1110 functions as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. An upper surface of the electrostatic chuck 1111 is a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater 1111a, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate supporting surface 111a.

[0013] The gas introduction unit is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas introduction unit includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the window member 101. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet 13c. The processing gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet 13c. Note that the gas introduction unit may include one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 102 in addition to or instead of the center gas injector 13. The side gas injector is an example of a gas inlet.

[0014] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the central gas inlet 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0015] The power source 30 includes an RF (Radio Frequency) power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal, such as a source RF signal and a bias RF signal, to the antenna 50, or to the antenna 50 and a conductive member of the substrate support 11. The RF signal may be referred to as RF power. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 may function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and ions in the formed plasma can be attracted to the substrate W.

[0016] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 50 and configured to generate a source RF signal for plasma generation through at least one impedance matching circuit. The source RF signal may be referred to as a source RF power. In one embodiment, the source RF signal has a frequency in a range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are provided to the antenna 50. The second RF generating unit 31b is coupled to a conductive member of the substrate support 11 through at least one impedance matching circuit and configured to generate a bias RF signal. The bias RF signal may be referred to as a bias RF power. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in a range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signal or signals are provided to the conductive members of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0017] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a bias DC signal. The generated bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the bias DC signal may be applied to another electrode, such as an electrode in the electrostatic chuck 1111. In various embodiments, the bias DC signal may be pulsed. It is noted that the bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0018] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0019] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on a program stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0020] [Antenna 50 Configuration] FIG. 2 is a plan view showing an example of the shape and arrangement of the antenna 50. The antenna 50 has an inner coil 51 and an outer coil 52. The inner coil 51 is an example of a first coil. In this embodiment, the inner coil 51 and the outer coil 52 are provided in the same plane (e.g., a horizontal plane) that intersects with the central axis X. However, the disclosed technology is not limited to this, and the inner coil 51 and the outer coil 52 may be provided in different planes. Alternatively, at least a part of the inner coil 51 and the outer coil 52 may be arranged in a plane different from the plane in which the inner coil 51 and the outer coil 52 are arranged.

[0021] The inner coil 51 is supplied with RF power from the power source 30. The inner coil 51 generates a magnetic field by the RF power supplied from the power source 30, and is inductively coupled with the outer coil 52 by the generated magnetic field. The inner coil 51 radiates a part of the RF power supplied from the power source 30 into the plasma processing chamber 10, and supplies the other part to the outer coil 52. In this embodiment, the inner coil 51 has a coil 51a and a coil 51b spaced apart from each other. The coil 51a and the coil 51b are arranged rotationally symmetrically about the central axis X. That is, the inner coil 51 has a shape that is rotationally symmetrical about the central axis X.

[0022] 2, the coils 51a and 51b are each formed in a spiral shape with the central axis X as the center and making 1.5 revolutions around the central axis X. In addition, in the example of FIG. 2, the outermost end of the coil 51a is disposed at a position opposite to the outermost end of the coil 51b with respect to the central axis X, and the innermost end of the coil 51a is disposed at a position opposite to the innermost end of the coil 51b with respect to the central axis X. This makes it possible to reduce the influence of discontinuous electromagnetic waves radiated from the ends of the coils 51a and 51b on the plasma formed in the plasma processing space 10s.

[0023] 2, the inner coil 51 has two coils 51a and 51b formed in a spiral shape, but the disclosed technology is not limited to this. The coils constituting the inner coil 51 may have a linear, broken line, curved, radial, polygonal shape, or a combination of these shapes, as long as they have a rotationally symmetric shape about the central axis X.

[0024] The outer coil 52 has a plurality of coils 52a, 52b, 52c, and 52d formed in the same shape. The coils 52a to 52d are an example of a second coil. Each of the coils 52a to 52d is arranged rotationally symmetrically around the inner coil 51 with respect to the central axis X of the inner coil 51. Each of the coils 52a to 52d is inductively coupled to the inner coil 51, and radiates RF power to the plasma processing space 10s according to the RF power supplied from the inner coil 51. In the example of FIG. 2, four coils 52a to 52d are arranged rotationally symmetrically around the inner coil 51, but the disclosed technology is not limited thereto. As long as a plurality of coils are arranged rotationally symmetrically around the inner coil 51, the number of coils constituting the outer coil 52 may be less than four or more than four. The number of coils may be an even number or an odd number.

[0025] In this embodiment, each of the coils 52a to 52d is curved and arranged around the inner coil 51 in a convex orientation in a direction away from the inner coil 51. In the example of Fig. 2, the coil 52a is arranged around the inner coil 51 in a convex orientation in a direction A away from the inner coil 51, and the coil 52b is arranged around the inner coil 51 in a convex orientation in a direction B away from the inner coil 51. Similarly, the coil 52c is arranged around the inner coil 51 in a convex orientation in a direction C away from the inner coil 51, and the coil 52d is arranged around the inner coil 51 in a convex orientation in a direction D away from the inner coil 51.

[0026] 2, each of the coils 52a to 52d of the outer coil 52 has a curved shape, but the disclosed technology is not limited to this. As long as each of the coils 52a to 52d of the outer coil 52 has the same shape, it may be a straight line, a broken line, a curved line, a radial shape, a polygonal shape, or a combination of these shapes.

[0027] For example, the coils 52a to 52d of the outer coil 52 may be arranged around the inner coil 51 along a circumference centered on the central axis X, as shown in Fig. 3. Also, the coils 52a to 52d may be arranged such that ends of adjacent coils overlap in the circumferential direction centered on the central axis X, as shown in Fig. 4. Furthermore, the coils 52a to 52d may be arranged such that parts of adjacent coils overlap, as shown in Fig. 5.

[0028] Alternatively, as shown in Fig. 6, each of the coils 52a-52d may be formed in a spiral shape with 1.25 revolutions around the central axis X. In the example of Fig. 6, each of the coils 52a-52d is disposed at an angle of 90° around the central axis X. This can reduce the influence of discontinuous electromagnetic waves radiated from the ends of the coils 52a-52d on the plasma formed in the plasma processing space 10s.

[0029] 3 to 6, the region where the inner coil 51 is arranged is indicated by hatching. Although variations in the shape of the outer coil 52 are described in Fig. 3 to 6, the variations in the shape of the antenna disclosed in Fig. 3 to 6 can also be applied to the inner coil 51.

[0030] [Circuit configuration of antenna 50] 7 is a connection diagram showing an example of a circuit configuration of the antenna 50 in the first embodiment. One end of the coil 51a and one end of the coil 51b of the inner coil 51 are connected to the power source 30, and the other ends of the coil 51a and the coil 51b are grounded via a capacitor 510.

[0031] A variable capacitance capacitor is connected to each of the coils 52a to 52d of the outer coil 52. In the example of FIG. 7, the end 520a, which is one end of the coil 52a, is grounded via the variable capacitance capacitor 53a. The end 521a, which is the other end of the coil 52a, is grounded. The end 520b, which is one end of the coil 52b, is grounded via the variable capacitance capacitor 53b. The end 521b, which is the other end of the coil 52b, is grounded. The end 520c, which is one end of the coil 52c, is grounded via the variable capacitance capacitor 53c. The end 521c, which is the other end of the coil 52c, is grounded. The end 520d, which is one end of the coil 52d, is grounded via the variable capacitance capacitor 53d. The end 521d, which is the other end of the coil 52d, is grounded. The end 520a, the end 520b, the end 520c, and the end 520d may each be grounded via a capacitor having a fixed capacitance.

[0032] By adjusting the capacitance of the variable capacitors 53a-53d, the current flowing through each of the coils 52a-52d can be adjusted. The individual adjustment of the capacitance of each of the variable capacitors 53a-53d is performed by, for example, the control unit 2. By adjusting the current flowing through each of the coils 52a-52d, the density of the plasma formed in the plasma processing space 10s below each of the coils 52a-52d can be adjusted. For example, by increasing or decreasing the current flowing through each of the coils 52a-52d by the same amount, the distribution of the plasma density in the radial direction centered on the central axis X can be adjusted. Also, for example, by adjusting the current flowing through each of the coils 52a-52d to have different values, the distribution of the plasma density in the circumferential direction centered on the central axis X can be adjusted.

[0033] The first embodiment has been described above. As is clear from the above description, the plasma processing apparatus 1 of the present embodiment includes a plasma processing chamber 10, a window member 101, a gas inlet 13c, and an antenna 50. The plasma processing chamber 10 accommodates a substrate W. The window member 101 constitutes an upper portion of the plasma processing chamber 10. The gas inlet 13c is provided in at least one of a sidewall of the plasma processing chamber 10 and the window member 101, and supplies gas into the plasma processing chamber 10. The antenna 50 is provided above the plasma processing chamber 10 via the window member 101, and is formed linearly from a conductive material. The antenna 50 converts the gas supplied into the plasma processing chamber 10 into plasma by radiating RF power into the plasma processing chamber 10. The antenna 50 includes an inner coil 51 and a plurality of coils 52a to 52d. RF power is supplied to the inner coil 51. The coils 52a-52d are formed in the same shape and are arranged around the inner coil 51 in rotational symmetry with respect to the central axis X of the inner coil 51. One end of each of the coils 52a-52d is connected to a variable capacitor. The plasma processing apparatus 1 having such a configuration can improve the uniformity of the plasma processing.

[0034] In the first embodiment described above, the other end of each of the coils 52a to 52d is grounded. One end of each of the variable capacitors 53a to 53d is connected to the corresponding coil 52a to 52d, and the other end is grounded. This allows the current flowing through each of the coils 52a to 52d to be individually adjusted by adjusting the capacitance of each of the variable capacitors 53a to 53d.

[0035] In the first embodiment described above, the inner coil 51 has a rotationally symmetric shape about the central axis X. This allows the magnetic field to be more uniformly radiated into the plasma processing chamber 10, thereby improving the uniformity of the plasma processing.

[0036] In the first embodiment described above, the inner coil 51 has a plurality of coils 51a and 51b spaced apart from each other, which allows the magnetic field to be more uniformly radiated into the plasma processing chamber 10, thereby improving the uniformity of the plasma processing.

[0037] In the first embodiment described above, each of the coils 52a-52d is curved and arranged around the inner coil 51 with a convex orientation in a direction away from the inner coil 51. This allows the magnitude of the magnetic field radiated downward from each of the variable capacitors 53a-53 to be individually adjusted with high accuracy.

[0038] In the first embodiment described above, the inner coil 51 and the coils 52a to 52d are disposed in the same plane intersecting the central axis X. This allows the distribution of the magnetic field radiated into the plasma processing chamber 10 to be adjusted with high precision.

[0039] Second embodiment In the second embodiment, both ends of each coil of the outer coil 52 are connected via a variable capacitance capacitor. FIG. 8 is a connection diagram showing an example of a circuit configuration of the antenna 50 in the second embodiment. For example, as shown in FIG. 8, the end 520a and the end 521a of the coil 52a are connected via a variable capacitance capacitor 53a, and the end 520b and the end 521b of the coil 52b are connected via a variable capacitance capacitor 53b. In addition, the end 520c and the end 521c of the coil 52c are connected via a variable capacitance capacitor 53c, and the end 520d and the end 521d of the coil 52d are connected via a variable capacitance capacitor 53d. Even in the antenna 50 configured as in FIG. 8, the current flowing through each of the coils 52a to 52d can be adjusted by adjusting the capacitance of the variable capacitance capacitors 53a to 53d.

[0040] 8, the potential difference between the plasma generated in the plasma processing space 10s and each of the coils 52a to 52d can be reduced, thereby suppressing capacitive coupling between the plasma generated in the plasma processing space 10s and each of the coils 52a to 52d.

[0041] (Third embodiment) In the third embodiment, one end of each coil of the outer coil 52 is grounded via a variable capacitance capacitor, and the other end is open. FIG. 9 is a connection diagram showing an example of a circuit configuration of the antenna 50 in the third embodiment. For example, as shown in FIG. 9, the end 520a of the coil 52a is grounded via a variable capacitance capacitor 53a, and the end 521a is open. The end 520b of the coil 52b is grounded via a variable capacitance capacitor 53b, and the end 521b is open. The end 520c of the coil 52c is grounded via a variable capacitance capacitor 53c, and the end 521c is open. The end 520d of the coil 52d is grounded via a variable capacitance capacitor 53d, and the end 521d is open. Even in the antenna 50 configured as in FIG. 9, the current flowing through each of the coils 52a to 52d can be adjusted by adjusting the capacitance of the variable capacitance capacitors 53a to 53d.

[0042] In addition, in the antenna 50 configured as shown in FIG. 9, the voltage at the open end of each of the coils 52a-52d becomes high. This allows plasma to be ignited even under conditions where plasma ignition is difficult, such as a low-pressure environment. However, if the potential difference between the plasma formed in the plasma processing space 10s and the coils 52a-52d becomes large, capacitive coupling may occur between the plasma and the coils 52a-52d, causing the plasma mode to become a capacitive coupling mode. Therefore, it is preferable that the open end of each of the coils 52a-52d is disposed at a position away from the center of the plasma processing space 10s in the direction of the central axis X.

[0043] For example, as shown in FIG. 9, in the direction of the central axis X, the distance L2 between the end 521a of the coil 52a and the inner coil 51 is longer than the distance L1 between the end 520a of the coil 52a and the inner coil 51. The same is true for the coils 52b to 52d. The inner coil 51 is disposed in the approximate center of the plasma processing space 10s in the direction of the central axis X. Thus, in this embodiment, the open ends (ends 521a to 521d) of the coils 52a to 52d are disposed farther from the inner coil 51 than the ends (ends 520a to 520d) of the coils 52a to 52d. This makes it possible to suppress the effect of capacitive coupling between the ends of the coils 52a to 52d in the plasma formed in the plasma processing space 10s.

[0044] In the third embodiment, the voltage at the open end of each of the coils 52a to 52d increases, and the strength of the electric field radiated from the open end increases. Therefore, near the open end, charged particles such as ions are attracted by the electric field radiated from each of the coils 52a to 52d, and the window member 101 near the open end may be sputtered by the attracted charged particles. This may cause particles to be generated from the window member 101 near the open end.

[0045] 10, for example, it is preferable that the distance D2 between the end 521a, which is the open end of the coil 52a, and the window member 101 is longer than the distance D1 between the end 520a of the coil 52a and the window member 101. The same is true for the coils 52b to 52d. That is, it is preferable that the open ends (ends 521a to 521d) of the coils 52a to 52d are disposed at positions farther from the window member 101 than the ends (ends 520a to 520d) of the coils 52a to 52d to which the variable capacitors are connected. This makes it possible to suppress particles generated from the window member 101.

[0046] [others] The present disclosure is not limited to the above-described embodiment, and various modifications are possible within the scope of the present disclosure.

[0047] For example, in each of the above-described embodiments, a device for measuring the state of plasma formed in the plasma processing space 10s may be provided, and the capacitance of each of the variable capacitors 53a-53d may be adjusted based on the measured state of plasma. For example, when there is a bias in the distribution of the measured plasma, the capacitance of each of the variable capacitors 53a-53d may be adjusted so that a current that suppresses the bias flows through the coils 52a-52d. Such control is realized, for example, by the control unit 2.

[0048] Furthermore, if a process bias is detected on the substrate W in the previous process, a biased plasma distribution that generates a bias opposite to the process bias may be intentionally generated in the plasma processing apparatus 1. This makes it possible to suppress the process bias as a whole in a semiconductor device manufactured through multiple processes, thereby improving the quality of the semiconductor device.

[0049] It should be noted that the embodiments disclosed herein are illustrative in all respects and should not be construed as limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0050] X center axis W substrate 100 Plasma Processing System 1. Plasma processing equipment 10 Plasma Processing Chamber 10e Gas exhaust port 10s Plasma treatment space 101 Window material 102 Side wall 11 Substrate support 111 Main body 111a Board support surface 111b Ring support surface 1110 Foundation 1110a Flow path 1111 Electrostatic Chuck 1111a Heater 112 Ring Assembly 13 Central gas injection section 13a Gas supply port 13b Gas flow path 13c Gas inlet 20 Gas supply section 21 Gas Source 22 Flow Controller 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32 DC power supply 32a Bias DC generator 40 Exhaust system 50 Antenna 51 Inner coil 51a Coil 51b Coil 510 Capacitor 52 Outer coil 520 End 521 End 52a Coil 52b Coil 52c coil 52d Coil 53a variable capacitor 53b Variable Capacitor 53c variable capacitor 53d Variable Capacitor 2. Control section 2a Computer 2a1 Processing section 2a2 Storage section 2a3 Communication Interface

Claims

1. a chamber for housing a substrate; a window member constituting an upper portion of the chamber; a gas inlet provided in at least one of a side wall of the chamber and the window member for supplying a gas into the chamber; an antenna that is provided above the chamber through the window member and is formed in a linear shape from a conductive material, the antenna radiating RF (Radio Frequency) power into the chamber to convert a gas supplied into the chamber into plasma; Equipped with The antenna is a first coil to which RF power is supplied; a plurality of second coils formed in the same shape, arranged rotationally symmetrically around the central axis of the first coil, and inductively coupled to the first coil; having A plasma processing apparatus, wherein one end of each of the second coils is connected to a variable capacitor.

2. the first coil is connected to an RF power source that supplies the RF power; the plurality of second coils are not connected to the RF power source; The plasma processing apparatus according to claim 1 .

3. The other end of each of the second coils is grounded, one end of each of the variable capacitors is connected to one end of the second coil, The other end of each of the variable capacitors is grounded.

3. The plasma processing apparatus according to claim 1 or 2.

4. The other end of each of the second coils is grounded via a capacitor, one end of each of the variable capacitors is connected to one end of the second coil, The other end of each of the variable capacitors is grounded.

3. The plasma processing apparatus according to claim 1 or 2.

5. one end and the other end of each of the second coils are connected via a corresponding one of the variable capacitors; 3. The plasma processing apparatus according to claim 1 or 2.

6. The other end of each of the second coils is open, One end of each of the second coils is grounded via a corresponding one of the variable capacitors.

3. The plasma processing apparatus according to claim 1 or 2.

7. The other end of each of the second coils is The second coil is disposed at a position farther from the first coil than one end of the second coil. The plasma processing apparatus according to claim 6 .

8. The other end of each of the second coils is The second coil is disposed at a position farther from the window member than one end of the second coil.

8. The plasma processing apparatus according to claim 5 or 7.

9. The first coil has a shape rotationally symmetrical about the central axis. The plasma processing apparatus according to claim 1 .

10. The first coil has a plurality of coils spaced apart from one another. The plasma processing apparatus according to claim 1 .

11. Each of the second coils is curved; The first coil is disposed around the first coil in a convex direction away from the first coil. The plasma processing apparatus according to claim 1 .

12. The first coil and each of the second coils are disposed in the same plane. The plasma processing apparatus according to claim 1 .

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