Method including positioning source die or destination site to compensate for overlay error

Abstract

To provide a system for adjusting the position of a source die or a destination site to compensate for an overlay error between a source die and a different destination site, which are bonded, and a method using the system.SOLUTION: In a system 100, an apparatus 110 includes a bridge 120, a base 140, a controller 160, and a memory 162. The method includes bonding a first source die to a first destination site of a destination substrate. The first source die includes a source measurement pattern including a source alignment mark, and the first destination site includes a destination measurement pattern including a destination alignment mark. The method includes collecting radiation data regarding the source and destination measurement patterns within a radiation area.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Related Fields This application is related to a U.S. patent application entitled "METHOD INCLUDING POSITIONING A DUMMY SOURCE DIE OR DESTINATION SITE TO COMPENSATE FOR OVERLAY ERROR" filed on the same day by Choi (Attorney Docket No. CNT C1158-US), which is assigned to the present assignee and is hereby incorporated by reference in its entirety. Field of Disclosure The present disclosure relates to a method that involves adjusting the position of a source die or a destination site to compensate for overlay errors between a previously bonded source die and a different destination site. [Background technology]

[0002] Advanced packaging technologies require high throughput and precise placement of the die. Hybrid bonding can be particularly challenging when the tolerance for misalignment is small. The apparatus includes a bridge and a base, where the bonding head, alignment hardware, and alignment reference are coupled to the bridge, and the carriage is coupled to the base. The destination substrate chuck and alignment hardware are coupled to the carriage. During the hybrid bonding sequence, the source die is held by the bonding head and the destination substrate is held by the destination substrate chuck. The amount of misalignment can be measured relative to the source die, separately from the destination substrate chuck. Although there is some compensation for the misalignment, there is no end point sensing and the overlay error can be larger than desired. There is a need for better overlay error measurement. Summary of the Invention [Means for solving the problem]

[0003] The method may include bonding a first source die to a first destination site on a destination substrate. The first source die may include a first source active area and a first source boundary area, the first source active area including a first source active contact pad, and the first source boundary area including a first source metrology pattern including a first source alignment mark. The first destination site may include a first destination active area and a first destination boundary area, the first destination active area including a first destination active contact pad, and the first destination boundary area including a first destination metrology pattern including a first destination alignment mark. After bonding, the first source active contact pad contacts the first destination active contact pad. The method may further include collecting first radiation data for at least a portion of the first source measurement pattern and the first destination measurement pattern in a first radiation region, where collecting the first radiation data is performed after bonding the first source die to the first destination site, where the first source alignment mark does not directly overlap or directly under any alignment mark of the first destination measurement pattern in the first radiation region; analysing the first radiation data to determine a first overlay error between the first source die and the first destination site; and adjusting a position of a second source die or a second destination site of the destination substrate to compensate for the first overlay error between the first source die and the first destination site.

[0004] In one embodiment, the method further includes irradiating the first radiation region with radiation, the first source metrology pattern including a set of source alignment marks including the first source alignment mark, and the first destination metrology pattern including a set of destination alignment marks including the first destination alignment mark, and during irradiating the first radiation region, no more than 25% of the radiation is transmitted through each of the source alignment marks and the destination alignment marks.

[0005] In certain embodiments, illuminating the first radiative region is performed with infrared radiation.

[0006] In another embodiment, the first source metrology pattern includes a set of source alignment marks along a first source bonding surface including the first source alignment mark, and the first destination metrology pattern includes a set of destination alignment marks along a first destination bonding surface including the first destination alignment mark.

[0007] In a specific embodiment, none of the source alignment marks in the first source metrology pattern contact any of the destination alignment marks in the first destination metrology pattern.

[0008] In another specific embodiment, the set of source alignment marks includes a source array of dummy contact pads and the first source alignment mark is a dummy contact pad within the source array of dummy contact pads, the first destination metrology pattern includes a destination array of dummy contact pads and the first destination alignment mark is a particular dummy contact pad within the destination array of dummy contact pads.

[0009] In a more particular embodiment, the source array is phase shifted with respect to the destination array by an angle ranging from 90° to 270°.

[0010] In a further specific embodiment, the method further includes irradiating the first emission region with radiation. Within the first emission region, the first source measurement pattern includes portions that are relatively opaque to the radiation and portions that are relatively transparent to the radiation. The relatively opaque portions of the first source measurement pattern include a set of source alignment marks, and the relatively transparent portions of the first source measurement pattern are located between the source alignment marks. The source alignment marks are only within the relatively opaque portions, and no source alignment marks are within the relatively transparent portions.

[0011] In another specific embodiment, the analyzing includes analyzing the first radiation data using spatial frequency analysis.

[0012] In a more specific embodiment, the first source measurement pattern, the first destination measurement pattern, or each of the first source measurement pattern and the first destination measurement pattern has a pitch and a size of a particular alignment mark corresponding to the pitch, and a quotient is the pitch divided by the size of the particular alignment mark corresponding to the pitch, and the pitch and the size of the particular alignment mark corresponding to the pitch correspond to values ​​in the frequency domain, the value being the quotient + / - 10% and in the range of 1.5 to 9.0.

[0013] In another embodiment, the method further comprises irradiating the first radiation area with radiation, and collecting radiation data is performed using a radiation detector, the radiation detector having a focal depth of up to 9 μm.

[0014] In yet another embodiment, the first destination border area is disposed between a first dicing lane and the first destination active area, and none of the first destination active areas are disposed between the first dicing lane and the first destination border area.

[0015] In a further embodiment, the method further comprises bonding a second source die to the second destination site of the destination substrate, the second source die including a second source metrology pattern, the second destination site including a second destination metrology pattern, the second source metrology pattern being identical to the first source metrology pattern, and the second destination metrology pattern being identical to the first destination metrology pattern; collecting second radiation data for at least a portion of the second source metrology pattern and the second destination metrology pattern within a second radiation area, the collecting of the second radiation data being performed after bonding the second source die to the second destination site; and analysing the second radiation data to determine a second overlay error between the second source die and the second destination site.

[0016] In a specific embodiment, the first overlay error is in a first direction and the second overlay error is in a second direction different from the first direction.

[0017] In another particular embodiment, the first overlay error is in a first direction and the second overlay error is in a second direction that is the same as the first direction.

[0018] In a further specific embodiment, the first source die and the second source die are different source dies, and the first destination site and the second destination site are different destination sites.

[0019] In a more particular embodiment, the first source die and the second source die have identical electrical circuitry.

[0020] In another particular embodiment, an updated overlay error is determined, the updated overlay error being the sum of the first overlay error and the second overlay error.

[0021] In a further specific embodiment, the method further includes testing the combination of the second source die and the second destination die using an electrical test to determine whether a second source active contact pad of the second source die and a second destination active contact pad of the second destination site are electrically connected to each other, and the combination of the second source die and the second destination die passes the electrical test.

[0022] In a further embodiment, the first source die is a defective source die and the first destination site is at least a portion of a defective destination die.

[0023] In a specific embodiment, the second source die is a known good source die and the second destination site is at least a portion of a known good destination die. [Brief description of the drawings]

[0024] Embodiments are illustrated by way of example and not limitation in the accompanying figures. [Figure 1] FIG. 1 contains a conceptual high level diagram of a system that may be used to transfer a die to a destination substrate. [Diagram 2] FIG. 2 includes a bottom view of a bridge of devices in the system of FIG. [Diagram 3] FIG. 3 includes an illustration of a cross-sectional view of the device in FIG. 1 taken along section line 3-3 in FIG. [Figure 4]FIG. 4 includes an illustration of the die loading machine and a cross-sectional view of the apparatus of FIG. 1, the apparatus being shown along section line 4-4 in FIG. [Diagram 5] FIG. 5 includes a process flow diagram for bonding a source die to a destination site on a destination substrate and determining an overlay error between the source die and its corresponding destination site. [Figure 6] FIG. 6 includes a process flow diagram for bonding a source die to a destination site on a destination substrate and determining an overlay error between the source die and its corresponding destination site. [Figure 7] FIG. 7 includes a process flow diagram for bonding a source die to a destination site on a destination substrate and determining an overlay error between the source die and its corresponding destination site. [Figure 8] FIG. 8 includes a process flow diagram for bonding a source die to a destination site on a destination substrate and determining an overlay error between the source die and its corresponding destination site. [Figure 9] FIG. 9 includes an illustration of a cross-sectional view of a portion of the apparatus after loading a source substrate onto the source substrate chuck and a destination substrate onto the destination substrate chuck. [Figure 10] FIG. 10 includes a top view of a destination substrate chuck and a destination substrate, the destination substrate including known good and bad die. [Figure 11] FIG. 11 includes a top view of a destination die containing a metrology pattern. [Figure 12] FIG. 12 includes a cross-sectional view of a portion of a destination die including alignment marks. [Figure 13] FIG. 13 includes a top view of a source die including a metrology pattern. [Figure 14]FIG. 14 includes a cross-sectional view of a portion of a source die including alignment marks. [Figure 15] FIG. 15 includes an illustration of a cross-sectional view of a portion of the system of FIG. 1 after attachment of a destination substrate and a source substrate including multiple source dies. [Figure 16] FIG. 16 includes an illustration of a cross-sectional view of the base of the system of FIG. 15 after the source die has been transferred to the die transfer sheet. [Figure 17] FIG. 17 includes an illustration of a cross-sectional view of the system of FIG. 16 when positioning the carriage with the optics under an alignment fiducial coupled to the bridge. [Figure 18] FIG. 18 includes an illustration of a cross-sectional view of the system of FIG. 17 after the source die has been placed under the bond head. [Figure 19] FIG. 19 includes an illustration of a cross-sectional view of the system of FIG. 18 after the source die has been transferred from the die transfer sheet to the bonding head. [Figure 20] FIG. 20 includes an illustration of a cross-sectional view of the system of FIG. 19 when measuring source die alignment error. [Figure 21] FIG. 21 includes an illustration of a cross-sectional view of the system of FIG. 20 after the source die has been placed onto the destination substrate. [Figure 22] FIG. 22 includes an illustration of a cross-sectional view of the system of FIG. 21 after bonding a source die to a destination site on a destination substrate. [Diagram 23] FIG. 23 includes an illustration of a top view of the destination substrate chuck and destination substrate of the system of FIG. 22 after bonding the source die to the destination site. [Figure 24] FIG. 24 includes cross-sectional views of a portion of a source die and a destination die in a metrology pattern for the die. [Diagram 25]FIG. 25 includes an illustration of a cross-sectional view of the system shown in FIGS. 1, 2 and 4 when collecting radiation data associated with a source die and a destination site. [Figure 26] FIG. 26 includes an illustration of radiation data corresponding to a portion of a source substrate and a portion of a source die within an emission area. [Figure 27] FIG. 27 includes an illustration of the X-direction metrology pattern of the source die. [Figure 28] FIG. 28 contains an illustration of the X-direction metrology pattern on the destination die. [Figure 29] FIG. 29 contains an illustration of the Y-direction metrology pattern of the source die. [Diagram 30] FIG. 30 contains an illustration of the Y-direction metrology pattern on the destination die. [Diagram 31] FIG. 31 includes an illustration of the emission area and X-direction metrology patterns of the source die and destination sites. [Diagram 32] FIG. 32 includes an illustration of the emission area and Y direction metrology patterns of the source die and destination sites. [Diagram 33] FIG. 33 includes an illustration of a portion of the emissive area of ​​FIG. 31 and an X-direction metrology pattern of the source die and destination site. [Diagram 34] FIG. 34 includes an illustration of a portion of the emissive area of ​​FIG. 32 and the Y-direction metrology patterns of the source die and destination site. [Diagram 35] FIG. 35 includes an illustration of a top view of active contacts on a source die and a destination site on a destination substrate. [Diagram 36] FIG. 36 includes an illustration of a cross-sectional view of the system after the carriage has been moved beneath a plurality of source dies coupled to a source substrate chuck. [Figure 37]FIG. 37 includes an illustration of a cross-sectional view of the system of FIG. 36 after transferring a set of source dies to the array on the die transfer sheet. [Figure 38] FIG. 38 includes an illustration of a cross-sectional view of the system of FIG. 37 when positioning the carriage with the optics under an alignment fiducial coupled to the bridge. [Figure 39] FIG. 39 includes an illustration of a cross-sectional view of the system of FIG. 38 after a set of source dies has been placed under the array of bonding heads. [Diagram 40] FIG. 40 includes an illustration of a cross-sectional view of the system of FIG. 39 after the set of dies has been transferred from the array on the die transfer sheet to the array on the bonding head. [Diagram 41] FIG. 41 includes an illustration of a cross-sectional view of the system of FIG. 40 when measuring alignment errors associated with a particular source die. [Diagram 42] FIG. 42 includes an illustration of a cross-sectional view of the system of FIG. 41 after bonding a set of source die to destination sites on a destination substrate. [Diagram 43] FIG. 43 includes an illustration of a top view of the destination substrate chuck and destination substrate of the system of FIG. 42 after bonding a set of source dies to their corresponding destination sites. [Diagram 44] FIG. 44 includes an illustration of a cross-sectional view of the system of FIG. 42 when collecting radiation data associated with another source die and its corresponding destination site. [Diagram 45] FIG. 45 includes an illustration of a portion of the radiation area of ​​the X-direction metrology pattern of the source die and destination site. [Diagram 46] FIG. 46 includes an illustration of a portion of the emission area of ​​the Y direction metrology pattern of the source die and destination site. [Figure 47]Figure 47 includes illustrations of top views of active contacts of a source die and a destination site on a destination substrate. Those skilled in the art will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to facilitate an understanding of embodiments of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The following description in combination with the drawings is provided to aid in understanding the teachings disclosed herein. The following discussion focuses on specific embodiments of the teachings. This focus is provided to help explain the teachings and should not be construed as a limitation on the scope or applicability of the teachings.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The materials, methods, and examples are illustrative only and are not intended to be limiting. To the extent not described herein, many details concerning specific materials and processing acts are conventional and can be found in textbooks and other sources.

[0027] The method includes bonding a first source die to a first destination site of a destination substrate. The first source die includes a source active area and a source boundary area, the source active area includes a source active contact pad, the source boundary area includes a source metrology pattern including a first source alignment mark. The first destination site includes a destination active area and a destination boundary area, the destination active area includes a destination active contact pad, the destination boundary area includes a destination metrology pattern including a first destination alignment mark. After bonding, the first source active contact pad contacts the first destination active contact pad. The method includes collecting radiation data for at least a portion of the source metrology pattern and the destination metrology pattern in an emission area, the collecting radiation data being performed after bonding the first source die to the first destination site. In the emission area, the source alignment mark does not directly overlap or directly underlie any alignment mark of the destination metrology pattern. The method further includes analyzing the radiation data to determine an overlay error between the first source die and the first destination site, and adjusting a position of a second source die or a second destination site of the destination substrate to compensate for the overlay error between the first source die and the first destination site.

[0028] The source die may be a production source die and need not be a dummy source die. The source die may be free of interconnects or other features in any metrology pattern of the source die that would prevent radiation data from being collected. In an embodiment, an alignment mark in the metrology pattern of a source die reflects substantially more radiation as compared to other portions of the metrology pattern or transmits substantially less radiation as compared to other portions of the metrology pattern of the source die.

[0029] There are many options for analyzing the radiation data. The analysis may or may not include generating an image. If an image is generated, further refinements may or may not be used to improve the image. The imaging may be performed in a focus range that may focus on alignment marks in the source and destination dies and generate an image in which the electrical circuit elements and interconnects in the destination die are not in focus. In the same or different embodiment, the imaging may be performed to generate an image in which the electrical circuit elements and interconnects are blurred. Pattern recognition may be used so that electrical circuit elements and interconnects under contact pads in the destination die are not taken into account when determining the overlay error. Additionally, spatial frequency analysis performed in the spatial frequency domain may be used when imaging or when determining the overlay error.

[0030] If necessary or desired, the metrology patterns can be designed so that alignment marks in one metrology pattern do not overlap alignment marks in the other metrology pattern. Ideally, alignment marks in one metrology pattern are 180° out of phase from alignment marks in the other metrology pattern. Overlay error corresponds to how far an alignment mark in one metrology pattern is from being 180° out of phase from an alignment mark in the other metrology pattern.

[0031] The resulting overlay error for the source die and its corresponding destination site includes an X-direction overlay error, a Y-direction overlay error, a rotational overlay error, or a combination thereof. The overlay error compensation can be used for a subsequent source die bonded to the destination substrate, where the overlay error compensation helps to reduce the overlay error of the subsequent die. The overlay error compensation allows for a larger overlap between the active contact pads of the source KGD to the active contact pads at the destination site of the destination KGD of the destination substrate. The increased overlap between the active contact pads helps to reduce the contact resistance.

[0032] The overlay error for two or more source dies can be obtained to provide information about device drift, whether there is center-to-edge variation or other positional relationship of the overlay error to the destination substrate on which the source dies are bonded, etc.

[0033] The method may be performed by a system that may be in the form of an apparatus or may include a combination of the apparatus and another apparatus used in a die loading machine or hybrid bonding die. The system and method of using the system will be better understood with reference to the following description taken in conjunction with the accompanying drawings.

[0034] 1-4 include a conceptual diagram of a system 100 that may include an apparatus 110. The system 100 may be used to transfer multiple dies to a destination substrate. FIG. 1 includes a high level diagram of the system 100, and FIG. 2 includes a bottom view of the bridge 120. In FIG. 2, section line 3-3 corresponds to FIG. 3, and section line 4-4 corresponds to FIG. 4. FIG. 3 includes a cross-sectional view of the apparatus 110 to illustrate components used to transfer multiple dies to a destination substrate. FIG. 4 includes a cross-sectional view of the system 100 including a radiation tool 272 within the apparatus 110. FIGs. 1-4 illustrate the apparatus that make up the system 100, and do not illustrate multiple dies or a destination substrate. Multiple dies and a destination substrate are described with respect to process flow diagrams described later in this specification.

[0035] 1-3, in an embodiment, the apparatus 110 includes a bridge 120, a base 140, a controller 160, and a memory 162. The controller 160 is coupled to the bridge 120, the base 140, one or more components coupled to the bridge 120 or the base 140, or a combination thereof. Each of the bridge 120 and the base 140 is a support structure. The bridge 120 can be coupled to a source substrate chuck 122, an array of bonding heads 124, alignment fiducials 128, and optical components 130. The base 140 can be coupled to a carriage 146.

[0036] In Figures 3 and 4, the bridge 120, the base 140, and components physically coupled to the bridge 120 or the base 140 can be structured along an X direction, a Y direction, a Z direction, or a combination thereof. With respect to Figures 3, 4, and other cross-sectional or side views in the figures, the X direction is between the left and right sides of the figures, the Z direction is between the top and bottom of the figures, and the Y direction is in and out of the drawing sheet. Unless otherwise noted, rotations occur along the XY plane defined by the X and Y directions.

[0037] The source substrate chuck 122 may be a vacuum chuck, a pin-type chuck, a groove-type chuck, an electrostatic chuck, an electromagnetic chuck, etc. The source substrate chuck 122 may be coupled to the bridge 120 by being attached directly to the bridge 120 or may be coupled to the bridge 120 via a carriage (not shown). The source substrate chuck 122 has a source-holding surface facing the base 140 or a component coupled to the base 140.

[0038] 2 includes a bottom view of bridge 120 to illustrate the general location of source substrate chuck 122, area 244 containing an array of bonding heads, alignment datums, optics, and radiation tool 272, which is described later in this specification.

[0039] 3 illustrates an array of bond heads 124. The array of bond heads 124 can be configured as a vector (rows or columns of bond heads), as a matrix (at least two rows and at least two columns of bond heads), or as a staggered array. The number of bond heads in the array of bond heads 124 can vary between rows, columns, or rows and columns. Some array configurations can be 3×1, 6×1, 2×2, 2×3, 2×4, 4×2, 10×10, or another rectangular shape, with a first number corresponding to the number of bond heads along one of the rows or columns and a second number corresponding to the number of bond heads along the other of the rows or columns.

[0040] Each of the bond heads in the array of bond heads 124 may include a die chuck and a body disposed between the die chuck and the bridge 120. Each of the die chucks may be a vacuum chuck, a pin-type chuck, a groove-type chuck, an electrostatic chuck, an electromagnetic chuck, a Bernoulli chuck, or the like. The die chuck may also be a non-contact chuck, which contacts the side surface of the die rather than the device surface or the back surface. The device surface is the surface of the die on which the electrical components are formed, the back surface of the die is the surface opposite the device surface, and the side surface is disposed between the device surface and the back surface of the die. If the die includes through-substrate vias (TSVs), the TSVs may be exposed along the back surface of the die. The non-contact chuck helps reduce the likelihood that an activated surface for bonding will contact the bond head. In an embodiment, the device surface, the back surface, or both the device surface and the back surface may have an activated surface. The side surface may not be activated for bonding.

[0041] The bonding heads may be configured such that the die chucks have a limited range of motion relative to their corresponding bodies to provide better positioning when dies are transferred from the array of bonding heads 124 to a destination substrate (not shown in FIGS. 1-4) coupled to a destination substrate chuck 148. Each bonding head may include a positioning stage that moves each bonding head independently in one or more of the X-direction, Y-direction, Z-direction, tip, tilt, and rotation.

[0042] 3, alignment fiducials 128 are coupled to bridge 120. Alignment fiducials 128 may include marks or other features that may aid in proper positioning of carriage 146 relative to bridge 120 or components coupled to bridge 120. Alignment fiducials 128 and optics 150 may be used during alignment operations. Further details regarding optics 150 are described below with respect to components coupled to base 140.

[0043] An optical component 130 is coupled to bridge 120 and may be used to determine the pitch of the array of die transfer sheets 144. The optical component 130 may also be used to confirm the presence or identity of a die transfer sheet within the array of die transfer sheets 144 or a die (e.g., die model number or type) coupled to a destination substrate coupled to destination substrate chuck 148. More than one optical component 130 may be coupled to bridge 120 if necessary or desired. The optical component 130 may be used to determine the location of a destination site on a destination substrate coupled to destination substrate chuck 148.

[0044] Carriage 146 is coupled to base 140. Carriage 146 can be a positioning stage and can provide translational motion along base 140 in the X, Y, or Z directions, or rotational motion about one or more axes, such as rotational motion about the Z axis and rotational motion along a plane along the X and Y directions.

[0045] The array of die transfer sheets 144 is coupled to a carriage 146. The array of die transfer sheets 144 has a body and a die chuck. The body is coupled to the carriage 146. The bridge 120 or a component coupled to the bridge 120 is closer to the die chuck than the body of a die transfer sheet in the array of die transfer sheets 144. In an embodiment, any one or more of the die transfer sheets can have a die chuck, which can be of any type described with respect to the array of bonding heads 124. The die transfer sheet and the bonding head can be the same type or different types. In an embodiment, a die transfer sheet in the array of die transfer sheets 144 can be a pick-up head.

[0046] The array of die transfer sheet 144 can be configured as a vector (row or column of pick-up heads), as a matrix (at least two rows and at least two columns of pick-up heads), or as a staggered array. For a matrix, the number of bonding heads in the array of die transfer sheet 144 can vary between rows, columns, or rows and columns. Some array configurations can be 3x1, 6x1, 2x2, 2x3, 2x4, 4x2, 10x10, or another rectangular shape, with a first number corresponding to the number of pick-up heads along one of the rows or columns and a second number corresponding to the number of pick-up heads along the other of the rows or columns.

[0047] Theoretically, the dies from an entire source wafer may be transferred all at once. In such a configuration, from a top view, the array of die transfer sheets 144 has fewer pick-up heads along rows closer to the top and bottom of the array compared to the row or pair of columns closest to the center of the array, and the array of die transfer sheets 144 has fewer pick-up heads along columns closer to the right and left sides of the array compared to the column or pair of columns closest to the center of the array. After reading this specification, one of ordinary skill in the art will be able to determine an array configuration for an array of die transfer sheets 144 that meets the needs or desires of a particular application.

[0048] The array of die transfer sheets 144 can be configured to have an adjustable pitch that can be reversibly changed between a source matching pitch and a bonding head matching pitch. The array of die transfer sheets 144 or carriages 146 can include motors, electrical components, etc. that can be driven to move the die transfer sheets to achieve the desired pitch. In an embodiment, the array of die transfer sheets 144 is at a source matching pitch when picking up a set of dies coupled to the source substrate chuck 122, and at a bonding head matching pitch when transferring the set of dies to the array of bonding heads 124. After the dies are transferred to the array of bonding heads 124, the pitch of the array of die transfer sheets 144 can be returned to the source matching pitch before picking up more dies.

[0049] The terms "transfer operation" and "transfer cycle" are used to aid in understanding the embodiments described herein. A transfer operation begins with loading a first set of dies onto the array of the die transfer sheet 144 and ends with a final set of dies being coupled to destination sites of a destination substrate on the destination substrate chuck 148. A transfer cycle begins with loading a set of dies onto the array of the die transfer sheet 144 until the same particular set of dies is coupled to destination sites of a destination substrate coupled to the destination substrate chuck 148. A transfer operation can include one or more transfer cycles.

[0050] In an embodiment, the die transfer sheets in the array of die transfer sheets 144 need not be pick-up heads. The die transfer sheets in the array of die transfer sheets 144 may or may not extend in the Z direction (towards bridge 120 or a component coupled to bridge 120). The die may be loaded onto the die transfer sheets in the array of die transfer sheets 144 by a die loading machine. The die may also be loaded manually by a human operator.

[0051] 3 is coupled to carriage 146 and can be used during alignment operations. Optical component 150 is part of the registration and alignment hardware used, for example, to align carriage 146 to alignment datum 128, identify the die held by the array of bond heads 126, position the bond heads, and measure misalignment errors of the die held by the array of bond heads 124. Optical component 150 can include lenses optically coupled to mirrors, prisms, gratings, light sources, fiber optic cables, apertures, tubes, cameras, or combinations thereof.

[0052] 3, the destination substrate chuck 148 is coupled to a carriage 146 that is coupled to the base 140. In an embodiment, the destination substrate chuck 148 is attached to the carriage 146. The destination substrate chuck 148 can hold a destination substrate including destination sites. The destination substrate chuck 148 can be a vacuum chuck, a pin-type chuck, a groove-type chuck, an electrostatic chuck, an electromagnetic chuck, etc. The destination substrate chuck 148 can be heated, cooled, or both heated and cooled. The destination substrate chuck 148 can include a heater (not shown). In the same or a different embodiment, a fluid (not shown) can flow through the destination substrate chuck 148 to increase or decrease the temperature of the destination substrate chuck 148.

[0053] 1-4, the system 100 can operate using a controller 160 in communication with the bridge 120, any components coupled to the bridge 120, the base 140, any components coupled to the base 140, or any combination thereof. The controller 160 can operate using a computer readable program optionally stored in a memory 162. The controller 160 can include a processor (e.g., a central processing unit of a microprocessor or microcontroller), a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like. The controller 160 can also be within the device 110. In another embodiment (not shown), the controller 160 can be at least a part of a computer external to the device 110, such computer being bidirectionally coupled to the system 100. The memory 162 can include a non-transitory computer readable medium including instructions for performing operations related to or during a transfer operation. The memory 162 can include data used or obtained when performing a method. In another embodiment, bridge 120, a component coupled to bridge 120, base 140, or a component coupled to base 140 may include a local controller that provides some of the functionality otherwise provided by controller 160.

[0054] Attention is directed to a method of using system 100. Figures 5-8 include process flow diagrams of the methods described with respect to Figures 9-38. Some portions of system 100 shown in Figures 1-4, such as controller 160 and memory 162, are not shown in Figures 9-38 to simplify understanding of the concepts described herein.

[0055] 5, the method may include mounting a destination substrate on the destination substrate chuck, at block 522, and mounting a source substrate on the source substrate chuck, at block 524. Referring to FIGURE 9, the carriage 146 may be moved to allow easier access to the source substrate chuck 122 and the destination substrate chuck 148. The operations in blocks 522 and 524 may be performed in either order.

[0056] 9, a destination substrate 948 is mounted on the destination substrate chuck 148. The destination substrate 948 may include a semiconductor wafer, a package substrate, a printed wiring board, a circuit board, an interposer, etc. A microelectronic device may be part of the destination substrate 948, such as a semiconductor wafer. The package substrate, printed wiring board, circuit board, or interposer may or may not have a die attached thereto. Some or all of the sides of the destination substrate 948 may be activated for hybrid bonding. In an embodiment, the activated surfaces for hybrid bonding are illustrated as dark bands along the exposed surface of the destination substrate 948.

[0057] 10 includes a top view of the destination substrate chuck 148 and the destination substrate 948. The destination substrate 948 includes a destination die 1020. Any or all of the destination die 1020 can include a microprocessor, a microcontroller, a graphic processing unit, a digital signal processor, a memory die (e.g., level 2 or level 3 cache, flash memory, etc.), a field programmable gate array (FPGA), a power transistor die, a power circuit die, a charge coupled device (CCD), an image sensor, a semiconductor circuit element, a die bonding location on the destination substrate, etc.

[0058] Each of the destination dies 1020 is either a known good die (KGD) 1020 or a bad die 1034. A KGD, whether a destination die, a source die, or another die, can pass one or more tests and allow bonding to another die. A bad die fails at least one test, which may be an electrical open, an electrical short, or other functional test (e.g., a process operation not performed (missing implant, insulating layer not formed, missing etch operation, etc.), a process operation inadvertently performed more than once, etc.), or an operation that is too slow for a particular application (e.g., operating frequency too low, read access time too long, etc.).

[0059] 1-4 and 10, information about the KGD 1024 and the bad die 1034 and their locations relative to the destination substrate 948 may be stored in memory 162 or another data storage unit (e.g., hard disk, database, etc.) external to the system 100 for later use when determining where the source die should be bonded to the destination substrate 948. In an embodiment, all destination die 1020, regardless of whether it is a KGD 1024 or a bad die 1034, can have a circuit element and an electrical circuit including multiple electrical circuit elements. As used herein, an electrical circuit element can include a transistor, resistor, capacitor, or inductor, and does not include a conductive structure by itself (such as a contact pad, an interconnect, or a conductive plug between levels of interconnects).

[0060] FIG. 11 includes a top view of one of the destination die 1020 including an active area 1120 and a border area 1122 surrounding the active area 1120. In an embodiment, none of the active area 1120 is disposed between the border area 1122 and a dicing lane. The active area 1120 includes all or substantially all of the electrical circuit elements, electrical circuits, and active contact pads for the destination die 1020. As used herein, an active contact pad is electrically connected to an electrical circuit element or electrical circuit within a die, such as the destination die 1020, a source die, or another die. The active contact pad is electrically connected to an electrical circuit element or electrical circuit within the destination die 1020. In practice, the destination die 1020 includes many active contact pads and many electrical circuit elements and electrical circuits. The border area 1122 may not include any active contact pads for the destination die 1020.

[0061] Boundary region 1122 includes metrology patterns 1142 and 1144. Metrology pattern 1142 has a length extending in an X direction (between the left and right sides of FIG. 11) and is shown as x1, x2, x3, and x4. Metrology pattern 1144 has a length extending in a Y direction (between the top and bottom sides of FIG. 11) and is shown as y1, y2, y3, and y4. Each of the x1-y1 pair, the x2-y2 pair, and the x3-y3 pair is located near a corner of the destination die 1020. With reference to x4, the corresponding pair of metrology patterns 1142 and 1144 does not have to be at a corner, and with reference to y4, the metrology patterns are spaced and sufficiently far away from all corners of the destination die 1020. 11 is exemplary and is not intended to limit where the metrology patterns 1142 and 1144 may be placed relative to the boundary region 1122. After reading this specification, one of ordinary skill in the art will be able to determine the location of the metrology patterns to meet the needs and desires of a particular application.

[0062] 11 , the outer perimeter edges of boundary area 1122 correspond to dicing lanes when destination substrate 948 is a semiconductor wafer that is subsequently diced into individual destination dies 1020. Metrology patterns 1142 and 1144 may or may not extend outside boundary area 1122. During dicing, some metrology patterns 1142, some metrology patterns 1144, or some of both metrology patterns 1142 and 1144 may be removed. At least a portion of metrology patterns 1142 and 1144 are present during subsequent radiation operations that are used to determine overlay error.

[0063] Each of the metrology patterns 1142 and 1144 may include alignment marks. In an embodiment, the alignment marks may be an array of contact pads. In a particular embodiment, the array of contact pads may be an array of dummy contact pads. As used herein, a dummy contact pad is not electrically connected to any electrical circuit elements or electrical circuitry of a die, such as the destination die 1020. FIG. 12 includes a cross-sectional view of a portion of the die 1020 in FIG. 11 including a portion of the metrology pattern 1142 including an alignment mark 1244 that extends through the silicon oxide layer 1224 into the substrate 1200. The placement of the alignment marks 1244 within the metrology patterns 1142 and 1144 is illustrated from a top view and will be described later in this specification.

[0064] 12 includes only a portion of a substrate 1200, which may include a semiconductor substrate (not separately shown), electronic components (not separately shown), an insulating layer 1202, interconnects 1204, and conductive plugs 1206. In an embodiment, the substrate 1200 includes a semiconductor substrate (e.g., Si, SiC, III-V semiconductor materials, II-VI semiconductor materials, etc.) with or without an insulating layer overlying the semiconductor substrate, a patterned polysilicon layer, etc. In an embodiment, the semiconductor material is single crystal Si, polycrystalline Si, 4H-SiC, 6H-SiC, Al x Ga (1-x)N (0≦x≦1), or a combination of layers, each layer in the combination of layers comprising one of the semiconductor materials.

[0065] Insulating layer 1202 may include multiple insulating layers including oxides, nitrides, or oxynitrides. Interconnect 1204 may be comprised of a metal or metal alloy, such as Al, Al-1 wt%, Cu, Cu, Ag, Au, Pt, Co, W, TiW, Ti, Ta, etc. Conductive plug 1206 may include any material described with respect to interconnect 1204. Alignment mark 1244 may include any material described with respect to interconnect 1204. Alignment mark 1244, interconnect 1204, and conductive plug 1206 may have the same or different materials.

[0066] 12, features other than the insulating layer underlie at least a portion of any one or more of the metrology patterns 1142 and 1144. The interconnects 1204 and conductive plugs 1206 underlie the metrology pattern 1142. Portions of the interconnects 1204 and conductive plugs 1206 are directly under the alignment marks 1244 (e.g., dummy contact pads) of the metrology pattern 1142, and other portions of the interconnects 1204 and conductive plugs 1206 are not directly under the alignment marks 1244 of the metrology pattern 1142. Although not shown, within the metrology pattern 1144, portions of the other interconnects and conductive plugs and the alignment marks 1244 have any of the positional relationships described with respect to the metrology pattern 1142. The terms "directly under" and "directly over" are described with respect to FIG. 14. In alternative embodiments, there may be more, fewer, or no features other than the insulating layer 1202 directly beneath the metrology patterns 1142, 1144, or the alignment marks within any one or more of the metrology patterns 1142 and 1144.

[0067] Note the source substrate 922 and the plurality of dies 924. Referring to FIG. 9, the source substrate 922 can be mounted along the source substrate chuck 122. The plurality of dies 924 can be mounted to the source substrate 922. The plurality of dies 924 can include a plurality of production source dies. As used herein, a production source die is a die formed during a microelectronics manufacturing process and includes an electrical circuit element. A production source die can include a single electrical circuit element or can include an electrical circuit including multiple electrical circuit elements. A production source die can be a KGD or failed die. All, or only some, but not all, of the plurality of dies 924 are transferred to a destination substrate 948. The source substrate 922 can be an adhesive tape in the form of a tape frame or tape reel, a container having a grid defining a matrix of areas that can hold the plurality of dies 924, or the like.

[0068] Any or all of the dies in the plurality of dies 924 may include a microprocessor, a microcontroller, a graphics processing unit, a digital signal processor, a memory die (e.g., level 2 or level 3 cache, flash memory, etc.), a field programmable gate array (FPGA), a power transistor die, a power circuit die, a charge coupled device (CCD), an image sensor, semiconductor circuit elements, etc. All of the dies in the plurality of dies 924 may include the same electrical circuit elements and, if electrical circuitry is present, the same electrical circuitry.

[0069] 13 includes a top view of a source die 1324, which is a die within the plurality of dies 924. The source die 1324 includes an active area 1320 and a border area 1322 that surrounds the active area 1320. The active area 1320 includes all or nearly all of the electrical circuit elements and circuits, interconnects, conductive plugs, and active contact pads for the source die 1324. The active contact pads are electrically connected to the electrical circuit elements or circuits in the source die 1324. In practice, the source die 1324 includes many active contact pads and many electrical circuit elements and circuits. The border area 1322 may not include any active contact pads for the source die 1324.

[0070] Boundary region 1322 includes metrology patterns 1342 and 1344. Metrology pattern 1342 has a length extending in an X direction (between the left and right sides of FIG. 13) and is denoted as x1. Metrology pattern 1344 has a length extending in a Y direction (between the top and bottom sides of FIG. 13) and is denoted as y1. The x1-y1 pair is located near a corner of source die 1324. Similar to metrology patterns 1142 and 1144 in FIG. 11, the corresponding pair of metrology patterns need not be at the corners, but the metrology patterns are spaced and sufficiently far away from all corners of source die 1324. The placement of metrology patterns 1342 and 1344 in FIG. 13 is exemplary and is not intended to limit where metrology patterns 1342 and 1344 may be placed relative to boundary region 1322. After reading this specification, one of ordinary skill in the art can determine the location of the metrology patterns to meet the needs and desires of a particular application.

[0071] 13, the outer perimeter edge of boundary area 1322 corresponds to the edge of source die 1324 that will be formed when dicing the wafer to form the multiple dies 924. Prior to dicing, metrology patterns 1342 and 1344 may or may not extend outside boundary area 1322. During dicing, some metrology patterns 1342, some metrology patterns 1344, or some of both metrology patterns 1342 and 1344 may be removed. As shown in FIG. 13, at least a portion of metrology patterns 1342 and 1344 are present during subsequent radiation operations that are used to determine overlay error.

[0072] Each of the metrology patterns 1342 and 1344 may include alignment marks. In an embodiment, the alignment marks may be an array of contact pads. In a particular embodiment, the array of contact pads may be an array of dummy contact pads. Figure 14 includes a cross-sectional view of a portion of the source die 1324 in Figure 13 including a portion of the metrology pattern 1342 that includes an alignment mark 1444 that extends through the silicon oxide layer 1442 and into the substrate 1432.

[0073] 14 includes only a portion of a substrate 1432, which may include a semiconductor substrate (not separately shown), an insulating layer 1442, and alignment marks 1444. In embodiments, the substrate 1432 includes a semiconductor substrate (e.g., Si, SiC, III-V semiconductor materials, II-VI semiconductor materials, etc.) with or without an insulating layer, such as a patterned polysilicon layer, a silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer, overlying the semiconductor substrate. In embodiments, the semiconductor material may be single crystal Si, polycrystalline Si, 4H-SiC, 6H-SiC, Al x Ga (1-x)N (0≦x≦1), or a combination of layers, each layer in the combination of layers comprising one of the semiconductor materials. The insulating layer 1442 can include multiple insulating layers including silicon oxide, silicon nitride, or silicon oxynitride. The alignment mark 1444 can be composed of a metal or metal alloy, such as Al, Al-1wt%, Cu, Cu, Ag, Au, Pt, Co, W, TiW, Ti, Ta, etc. More layers may be used in the source die 1324.

[0074] In an embodiment, the alignment mark 1444 may be an array of dummy contact pads. The radiation may be used during a subsequent radiation analysis operation. The substrate 1432 and the insulating layer 1442 are relatively transparent to radiation compared to the alignment mark 1444, and the alignment mark 1444 is relatively non-transparent to radiation compared to the substrate 1432 and the insulating layer 1442.

[0075] Zones 1454 correspond to alignment marks 1444, and zones 1452 correspond to the areas between alignment marks 1444. Zones 1452 and 1454 extend through, above, and below source die 1324. Any object or portion of source die 1324 within a particular zone 1454 and outside of its corresponding alignment mark 1444 is directly above or below the corresponding alignment mark 1444, regardless of whether such object or portion is in contact with or spaced from the corresponding alignment mark 1444. For example, referring to FIG. 14, a portion of substrate 1432 along an opposite side of alignment mark 1444 and within a particular zone 1454 is directly above the corresponding alignment mark 1444 within the particular zone 1454, even if such portion of substrate 1432 is not in contact with the corresponding alignment mark 1444. Such portions do not directly overlap portions of the insulating layer 1442 in directly adjacent zones 1452 or different alignment marks 1444 in different zones 1454 .

[0076] 11-14, each of the metrology patterns 1142, 1144, 1342, and 1344 of the plurality of dies 924, including the source die 1324, and the destination die 1020, may include a set of dummy contact pads, and in particular may be an array of dummy contact pads. The dummy contact pads in each of the metrology patterns 1142, 1144, 1342, and 1344 may be arranged on a rectangular, square, diagonal, or hexagonal grid, with each grid point in the area of ​​the die including a dummy contact pad. The bonding sites of the plurality of dies 924 have identical sets of dummy contact pads to match the dummy contact pads on the destination substrate 948. The arrangement of contact pads on each die may have a spatial frequency characterized by periodicity in two directions and the relative phase of the periodic arrangement in the two directions. The phase may be relative to a fixed point on the die, such as a corner of the die.

[0077] Each of the source dies in the plurality of dies 924 has a device side that has most or all of the electrical circuitry of the die, and a back side opposite the device side. In the embodiment illustrated in FIG. 9, the back side of a source die in the plurality of dies 924 is disposed between the source substrate chuck 122 and the device side of the source die. In another embodiment, the device side of a source die in the plurality of dies 924 is disposed between the source substrate chuck 122 and the back side of the source die. The side of the die that faces the base 140 or components coupled to the base 140 is activated for hybrid bonding to the destination substrate 948, and the dark bands along the bottom of the source dies in the plurality of dies 924 are used to illustrate the activated side. Any one or more of the source dies can have through-substrate via TSVs or electrical elements along the back side, and such dies may include backside bonding sites that serve as bonding sites for a future destination substrate to be used later.

[0078] The method includes performing registration and metrology on the plurality of dies on the source substrate and the plurality of die transfer sheets at block 542 in FIG. 5. Referring to FIG. 15, the registration and metrology operations can be performed on the array of the plurality of dies 924 and the die transfer sheet 144. The optics 150 can be used to gather information about the plurality of dies 924. The information from the optics 150 is sent to the controller 160 or a local controller and used to determine a source pitch of the plurality of dies 924 coupled to the source substrate chuck 122. The source pitch can include an X-direction source pitch, a Y-direction source pitch, or a source pitch in both the X-direction and the Y-direction. If necessary or desired, the information can be used to identify or verify that the dies in the plurality of dies 924 are in the correct relative position with respect to the destination sites of the destination substrate 948. The plurality of dies 924 can be production source KGDs that are bonded to KGDs 1024 of the destination substrate 948.

[0079] The method may further include changing the pitch of the array of the die transfer sheet to a source matching pitch in block 544 in FIG. 5. The source matching pitch may be the same as the source pitch or within a tolerance of the source pitch. Similar to the source pitch, the source matching pitch may include an X-direction source matching pitch, a Y-direction source matching pitch, or a source matching pitch in both the X-direction and the Y-direction. The tolerance constitutes the small difference due to the repeatability of the equipment or manufacturing process. As used herein, the tolerance is within 2.0%, 1.0%, or 0.5% of the desired value. For example, the source matching pitch is within 2.0%, 1.0%, or 0.5% of the source pitch.

[0080] The method may include loading a set of dies onto an array of die transfer sheets at block 546 in FIG. 5. The set may be as small as one die or any number up to the number of die transfer sheets in the multiple die transfer sheets 144. No source die from the multiple dies 924 is bonded to a destination site of a destination substrate 948. At this point in the method, there is no overlay error. To reduce the risk of the overlay error becoming unacceptably high, one die may be bonded to the destination substrate 948. In the same or different embodiment, the die may be a bad die as opposed to a KGD. In other embodiments, the die may be a KGD, or the set may include multiple dies that are bad dies, KGD, or a combination of bad dies and KGD. The following description is based on bonding one bad die during the first phase cycle.

[0081] 16, the array of die transfer sheets 144 can extend toward the source substrate 922, pick up a source die 1324, and pull the die chuck back from the source substrate 922. If the set of dies is smaller than the number of die transfer sheets in the array of die transfer sheets 144, only the die transfer sheet that picks up a source die during the current transfer cycle may be extended. The source die 1324 may be a production source die that is defective. Picking up a die is a specific type of loading. Another type of loading for the system 100 can be loading any or all of the die transfer sheets using a loading machine. Dies that are not picked up within the plurality of dies 924 remain coupled to the source substrate chuck 122 as illustrated in FIG. 16.

[0082] In an embodiment, the array of die transfer sheets 144 used to hold the source die does not contact the activated side of the source die. The die chuck of the array of die transfer sheets 144 may be a Bernoulli chuck. Although the source die 1324 is held by its corresponding die chuck, the source die 1324 is depicted in FIG. 16 as being spaced apart from its corresponding die transfer sheet in the array of die transfer sheets 144 to indicate that the activated side of the source die 1324 does not contact its corresponding die transfer sheet. The array of die transfer sheets 144 may have a design that allows for picking up the die along a side of the die, the side being between the device face and the back face of the die.

[0083] If the die is too thin to be held by its sides, a backing plate can be bonded to the die. For example, the die may have a thickness of less than 50 μm. The thickness of the backing plate, or the thickness of the backing plate and die combination, is sufficient to allow a pick-up head to pick up the backing plate or the backing plate and die combination without having the activated side of the die contact the pick-up head. The backing plate can have a thickness in the range of 100 μm to 500 μm.

[0084] The backing plate can be bonded to the source die 1324 using an adhesive. The backing plate may be removed later or may remain bonded to the die in the completed electrical device. After the die is bonded to the destination substrate 948, the backing plate may be removed. In an embodiment, the adhesive may be deactivated by exposure to actinic radiation. The actinic radiation may be in the range of 100 nm to 1000 nm. In such an embodiment, at least 70% of the actinic radiation is transmitted through the backing plate. In another embodiment, a solvent is used to remove the adhesive from between the source die 1324 and the backing plate.

[0085] In another embodiment, a die may not have an activated side, but rather have relatively fragile features along the side that will be bonded to destination substrate 948, and such side should not contact a die transfer sheet in the array of die transfer sheets 144. A die transfer sheet as described for a die having an activated side is used for a die that has fragile features along the side that faces the die transfer sheet.

[0086] In further embodiments, the die chuck for the array of die transfer sheets 144 can have a design where the die chuck contacts the underside of the die source 1324. After reading this entire specification, one of ordinary skill in the art can determine whether the array of die transfer sheets 144 should contact the device side or the backside of the die and determine a design that meets the needs and desires of a particular application.

[0087] The method may further include modifying the pitch of the array of die transfer sheets to the bonding head matching pitch at block 622 in FIG. 6. The bonding head matching pitch may be the same as or within an acceptable tolerance to the bonding head pitch of the array of bonding heads 124. The bonding head matching pitch and the bonding head pitch may include an X-direction bonding head matching pitch, a Y-direction bonding head matching pitch, or both an X-direction and a Y-direction bonding head matching pitch. For example, the bonding head matching pitch may be within 2.0%, 1.0%, or 0.5% of the bonding head pitch.

[0088] The method may include moving the carriage to an alignment position in block 642 in Figure 6. In Figure 17, the carriage 146 is moved so that the alignment datum 128 is above the optical component 150. The information collected from the optical component 150 is received by the controller 160 or a local controller. The controller 160 or a local controller may use the information for subsequent movement of the carriage 146 to a desired position.

[0089] The method can further include moving the carriage 146 such that the source die 1324 is transferred from the array of die transfer sheet 144 to the array of bonding heads 124. In the embodiment illustrated in Figure 18, the carriage 146 is moved such that a bonding head in the array of bonding heads 124 is above the source die 1324. The moving can include moving the carriage 146 in an X direction, a Y direction, rotating the carriage along an XY plane, or a combination thereof.

[0090] The method may further include transferring the set of dies from the array of die transfer sheet to the array of bonding heads at block 644 in Figure 6. The die chucks for the array of die transfer sheet 144 may extend toward the array of bonding heads 124, the die chucks for the bonding heads in the array of bonding heads 124 may extend toward the array of die transfer sheet 144, or both. Figure 19 includes source die 1324 after transferring it from the array of die transfer sheet 144 to the array of bonding heads 124.

[0091] The method may include measuring the alignment of the set of dies using optics at block 662 in FIG. 6. An optics 150 coupled to the carriage 146 may be used to position the source dies 132, measure the alignment error of the source dies 132, or both, as illustrated in FIG. 20. Better positioning of the dies may be achieved by measuring the alignment error as the position of each die on each bond head relative to the ideal position of the die on the bond head. Information from the optics 150 is sent to and received by the controller 160 or local controller. The controller 160 or local controller may use the information to determine the alignment error and the amount of positioning of the die such that the die is more closely aligned to its corresponding destination site on the destination substrate 948. The controller 160 or local controller may send a signal such that the position of each die is adjusted by moving the die chuck of the bond head using a limited range of movement of the die chuck relative to its corresponding body. Thus, in an embodiment, moving the die chuck allows the position of the die to be adjusted relative to the destination substrate 948 held by the destination substrate chuck 148. Measurement of the positioning and alignment error may be performed iteratively until the alignment error is zero or an acceptably low value.

[0092] The method includes determining whether to use overlay error compensation (OEC) in decision diamond 722 in Figure 7. The source die 1324 is the first die in the multiple dies 924 to be bonded to the destination substrate 948, so no overlay error has been determined. The method proceeds along the "NO" branch of decision diamond 722.

[0093] The method further includes moving the carriage so that the bonding head is over the destination substrate at block 742 in Figure 7. In Figure 21, the carriage 146 is moved so that the source die 1324 is over a corresponding destination site on the destination substrate.

[0094] The method may further include bonding the set of dies to corresponding destination sites of a destination substrate at block 744 in FIG. 7. A die chuck for a bonding head in the array of bonding heads 124 may extend toward the destination substrate 948, the destination substrate chuck 148 may extend toward the array of bonding heads 124, or both. In FIG. 22, pressure is applied to bond the source die 1324 to its corresponding destination site of the destination substrate 948. In an embodiment, the bonding may be oxide to oxide bonding. The pressure during bonding may be 0.5 N / cm. 2 from 20N / cm 2 The bonding can be performed at room temperature (e.g., at a temperature ranging from 20° C. to 25° C.) or above. The bonding is performed at a lower temperature than the subsequent anneal to expand the conductive metal within the die and at the destination site. The temperature and pressure may be limited depending on the film or components within device 110 present during bonding. For example, the temperature may be about 200° C. or less. After reading this specification, one of ordinary skill in the art will be able to determine the pressure and temperature to be used for bonding.

[0095] 23 includes a top view of the destination substrate chuck 148 and the destination substrate 948 after the source die 1324 has been bonded to its corresponding destination site on the destination substrate 948. To maintain a high yield of the destination substrate 948, the source die 1324, which is the faulty die in this particular example, can be bonded to the faulty die 1034 of the destination substrate 948. Referring to FIGS. 11, 13 and 23, the source die 1324 is bonded to the top left corner of the faulty die 1034. The source die 1324 includes an x1-y1 pair of metrology patterns 1342 and 1344 that are complementary to the x1-y1 pair of metrology patterns 1142 and 1144 of the faulty die 1034.

[0096] 24 includes a cross-sectional view of a portion of the source die 1324 and the bad die 1034 in the metrology pattern of the dies. The alignment mark 1444 for the source die 1324 is on the bonding side and contacts the bad die 1034, and the alignment mark 1244 for the bad die 1034 is on the bonding side and contacts the source die 1324. The alignment marks need not be on the bonding side. For example, the alignment mark 1444 on the source die 1324 can be spaced from the bonding side by at least a portion of the insulating layer 1442 such that the alignment mark 1444 does not contact the bad die 1034. Similarly, the alignment mark 1244 of the bad die 1034 is spaced from the bonding side and does not contact the source die 1324. In the illustrated embodiment, alignment marks 1444 of source die 1324 are spaced apart from and do not contact any of alignment marks 1244 of bad die 1034, and alignment marks 1244 of bad die 1034 are spaced apart from and do not contact any of alignment marks 1444 of source die 1324.

[0097] The method includes determining whether to determine an OEC at decision diamond 762 in Figure 7. Because the source die 1324 is the first die from the multiple dies 924 to be bonded to the destination substrate 948, overlay error compensation is determined. The method proceeds along the "YES" branch at decision diamond 762.

[0098] In Figure 8, the method may include irradiating a metrology pattern in the radiation area at block 842 and collecting radiation data corresponding to the metrology pattern in the radiation area at block 844. Figure 25 includes a cross-sectional view at this point in the method. The radiation tool 722 includes a radiation source 474, a reflector 476, and a radiation detector 478.

[0099] The radiation emitted by the radiation source 474 is reflected by some components in the metrology pattern in the source die 1324 and by destination sites in the destination substrate 948. In this example, the destination sites are part of the bad die 1034. The reflected radiation is received by the radiation detector 478. In the same or a different embodiment, the radiation source 474 is absorbed and some components in the source die 1324 or in the destination sites in the destination substrate 948 fluoresce, phosphoresce, or generate ionizing radiation, and the radiation detector 478 can detect the fluorescence, phosphorescence, or ionizing radiation emitted by such components. In this manner, the radiation detector 478 can detect the same or a different form of radiation as that emitted by the radiation source 474. For purposes of this specification, components in the plurality of dies 924 or destination sites in the destination substrate 948 that fluoresce, phosphoresce, or generate ionizing radiation in response to being illuminated by radiation are a type of non-transparent component.

[0100] In another embodiment, radiation may be sent through the source die 1324 and the destination substrate 948 may be detected by a radiation detector in the destination substrate chuck 148, the carriage 146, the base 140, or another suitable part of the system 100. Like the radiation detector 478, the radiation detector for transmitted radiation may detect the same type of radiation emitted by the radiation source 474, or another form of radiation, such as fluorescence, phosphorescence, or ionizing radiation.

[0101] The radiation is selected such that the source die 1324 includes relatively non-transparent and relatively transparent portions. As discussed above, the alignment marks 1244 and 1444 may include a metal or metal alloy that is more absorbing, reflecting, or absorbing and reflecting radiation than the insulating layer 1442 and the substrate 1432, which may include a semiconductor material, an insulating layer, or a combination thereof. The non-transparent portions may be the alignment marks 1444 that are dummy contact pads, and the relatively transparent portions may include the insulating layer 1442 and the substrate 1432. In an embodiment, the radiation is infrared (IR) and may have a wavelength ranging from 0.7 μm to 1000 μm, and in certain embodiments, from 1 μm to 10 μm or from 1 μm to 2 μm.

[0102] The radiation detector 478, a radiation detector in the destination substrate chuck 148, the carriage 146, the base 140, another suitable portion of the system 100, or another component coupled to the radiation tool 272 may collect at least some radiation data. The radiation data may include measurements of the intensity of the detected radiation and the location where such intensity was detected. If the radiation detector 478 is not able to collect position information, such position information may be obtained from the carriage 146 or another suitable component in the system 100.

[0103] FIG. 26 includes exemplary radiation data and position information that may be collected in relation to the source die 1324. Referring to FIGS. 25 and 26, the detection signal from the radiation detector 478 is normalized using only the position with the alignment mark 1444 and the position between the alignment mark 1444 and the alignment mark 2644. The alignment mark 2644 is a specific alignment mark, one of the alignment marks 1444. Most of the radiation from the radiation source 474 is reflected by the alignment mark 1444, which has a value of 1 in FIG. 26, and substantially less radiation is reflected in positions between the alignment marks, which has a value of 0 in FIG. 26. In practice, not all of the radiation is reflected by the alignment mark 1444, but at least some of the radiation is reflected by the combination of the substrate 1432 and the insulating layer 1442.

[0104] The metrology pattern 1142 for the destination site and the metrology pattern 1342 for the source die 1324 are described with respect to Figures 27 and 28, and the metrology pattern 1144 for the destination die 1020 and the metrology pattern 1344 for the source die 1324 are described with respect to Figures 29 and 30. After reading this entire specification, one of ordinary skill in the art will understand that the metrology patterns illustrated in Figures 27-30 are exemplary and are not intended to limit feature shapes or sizes and spacing between features for other metrology patterns.

[0105] FIG. 27 includes a top view of the X-direction metrology pattern 1342 of the source die in the boundary region 1322 adjacent to a portion of the active area 1320. The alignment mark 1444 may be 180 degrees out of phase with the active contact pads 3526 in the active area 1320, and the active area 1320 has underlying features that interfere with imaging of the active contact pads 3526 or any other alignment features in the active area. FIG. 28 includes a top view of the X-direction metrology pattern of the destination site in the boundary region 1122 adjacent to another portion of the active area 1320. The alignment mark 1244 is positioned in phase with the active contact pads 3528 in the active area 1120, and the active area 1120 has underlying features that interfere with imaging of the active contact pads 3528 or any other alignment features in the active area. FIG. 29 includes a top view of a Y-direction metrology pattern 1344 of a source die 1324 in a border region 1322 adjacent to yet another portion of the active area 1320. The alignment mark 1444 may be 180 degrees out of phase with the active contact pads 3526 in the active area 1320, and the active area 1320 has underlying features that interfere with imaging of the active contact pads 3526 or any other alignment features in the active area. FIG. 30 includes a top view of a Y-direction metrology pattern 1144 of a destination site in a border region 1122 adjacent to yet another portion of the active area 1320. The alignment mark 1444 is located in phase with the active contact pads 3528 in the active area 1120, and the active area 1120 has underlying features that interfere with imaging of the active contact pads 3528 or any other alignment features in the active area.

[0106] The metrology patterns 1142, 1144, 1342, and 1344 can be dedicated metrology structures that are not electrically connected to any electrical circuit elements or electrical circuits in the destination site. In this embodiment, the metrology patterns 1142, 1144, 1342, and 1344 can include alignment marks 1244 and 1444 that are arrays of dummy contact pads. In an alternative embodiment, the alignment marks 1244 on the destination die are out of phase with the active contact pads 3528 of the active area 1120 of the destination die, while the alignment marks 1444 of the source die are in phase with the contact pads 3526 of the active area 1320. In an alternative embodiment, the alignment marks 1444 of the source die 1324 are out of phase with the alignment marks 1244 of the destination die 1020.

[0107] In any of the above described embodiments, the metrology patterns 1142, 1144, 1342, and 1344 may be along the bonding surface or at a separate elevation rather than at the bonding interface. The destination die may include a lowest level of interconnects including gate electrodes and word lines, another level of interconnects including bit lines and interconnects electrically connected to source regions, drain regions, gate electrodes, or combinations thereof, yet another level of interconnects, further levels of interconnects, and finally a level including contact pads. Due to electromagnetic radiation, parasitic coupling, etc., the alignment marks 1244 in the destination site may be formed at a lower level of interconnects as opposed to a contact pad level. Thus, any of the metrology patterns 1142, 1144, 1342, and 1344 may be spaced apart from the bonding surface and not along the bonding surface.

[0108] 14, 27, and 29, the portions of source die 1324 within zone 1452 are relatively transmissive, and the portions of source die 1324 within zone 1454 are relatively non-transmissive due to the presence of alignment mark 1444. Within metrology patterns 1342 and 1344 in Figures 27 and 29, alignment mark 1444 corresponds to the relatively non-transmissive portions, and from the top views in Figures 27 and 29, the portions of metrology patterns 1342 and 1344 outside alignment mark 1444 are relatively transmissive. In the measurement patterns 1142 and 1144 in Figures 28 and 30, the alignment mark 1244 corresponds to a relatively non-transparent portion, and from the views in Figures 12, 28 and 30, the portion of the silicon oxide layer 1224 in the measurement patterns 1142 and 1144 that is outside the alignment mark 1244 is a relatively transparent portion.

[0109] The difference in transmission between the relatively transparent and relatively non-transparent portions is at least 25%. In the same or different embodiments, (1) no more than 25% of the radiation is transmitted through the relatively non-transparent portions, (2) at least 75% of the radiation is transmitted through all of the relatively transparent portions, or (3) no more than 25% of the radiation is transmitted through the relatively non-transparent portions and at least 75% of the radiation is transmitted through all of the relatively transparent portions.

[0110] FIG. 31 includes a top view of portions of metrology patterns 1142 and 1342 after source die 1324 has been bonded to a destination site. Radiation area 3140 corresponds to the area used to determine X-direction overlay error and is shown in dashed lines. FIG. 31 further includes portions of active areas 1120 and 1130 (labeled in FIGS. 27 and 29) with bonded contacts 3524 including active contact pads 3526 and 3528, respectively (labeled in FIGS. 27 and 29). FIG. 32 includes a top view of portions of metrology patterns 1144 and 1344 after source die 1324 has been bonded to a destination site. Radiation area 3240 corresponds to the area used to determine Y-direction overlay error and is shown in dashed lines. Figure 32 further includes portions of active areas 1120 and 1130 (labeled in Figures 28 and 30) having bonded contacts 3524 including active contact pads 3526 and 3528, respectively (labeled in Figures 28 and 30). The collected radiation data can correspond to emission areas 3140 and 3240.

[0111] Metrology patterns 1142 and 1342 are designed such that there is zero overlay error when the arrays of dummy contact pads in metrology patterns 1142 and 1342 are phase shifted at an angle of 180° relative to one another, and the arrays of dummy contact pads in metrology patterns 1144 and 1344 are designed such that there is zero overlay error when metrology patterns 1144 and 1344 are phase shifted at an angle of 180° relative to one another. In an embodiment, the phase shift may be in the range of 90° to 270°, 150° to 210°, or another suitable range that is useful for determining overlay error. In one or both of the pairs of metrology patterns in Figures 31 and 32, alignment mark 1444 does not directly overlap any of alignment marks 1244.

[0112] The phase shift may be in one direction or in different directions. Referring to Figure 31, metrology patterns 1142 and 1342 have a small number of rows and a large number of columns of alignment marks 1244 and 1444, and therefore metrology patterns 1142 and 1342 are better suited for determining overlay error in the X direction compared to overlay error in the Y direction. Referring to Figure 32, metrology patterns 1144 and 1344 have a large number of rows and a small number of columns, and therefore metrology patterns 1144 and 1344 are better suited for determining overlay error in the Y direction compared to overlay error in the X direction.

[0113] The method may include analyzing the radiation data to determine an overlay error between the source die and the corresponding destination site at block 846 in FIG. 8. The radiation data corresponding to the emission regions 3140 and 3240 may be sent to the controller 160 or a local controller. The data may or may not be stored in the memory 162. The data may be sent to a processor or memory external to the system 100. The data regarding the detected radiation and the position is processed by the controller 160, the local controller, or a computer external to the system 100 and further processed to determine the overlay error. The following paragraphs describe various methods for analyzing the radiation data. Each of the various methods, or a combination of such methods, may be used for the analysis.

[0114] An image can be generated from the radiation data. Imaging can be performed using the radiation data to generate an image corresponding to emission region 3140, emission region 3240, or emission regions 3140 and 3240, respectively. With reference to FIG. 31 , emission region 3140 can include all of metrology pattern 1142, metrology pattern 1342, or both, or can include portions of, but not all of, either or both of metrology patterns 1142 and 1342. Emission region 3140 includes portions of metrology patterns 1142 and 1342. With reference to FIG. 32 , emission region 3240 can include all of metrology pattern 1144, metrology pattern 1134, or both, or can include portions of, but not all of either or both of metrology patterns 1144 and 1344. Emission region 3240 includes portions of metrology patterns 1144 and 1344.

[0115] Imaging of the emission region 3240 can be aided by taking into account several considerations. Imaging can be performed by a radiation detector 478 having a depth of focus that can focus on the alignment marks in the metrology pattern. The depth of focus can be up to 9 μm, up to 7 μm, or up to 5 μm. In a particular embodiment, the alignment marks 1244 and 1444 can be an array of dummy contact pads on the bonding surface of the source die 1324 and the corresponding destination sites. The thickness of the dummy contact pads can range from 1 μm to 4 μm. The limit on the depth of focus can reduce the likelihood that other metal or metal alloy components located lower in the destination sites, such as the interconnects 1204 and conductive plugs 1206, will be in focus. Such components may not be visible or may be blurred. The depth of focus can be adjusted to the particular thickness used for the alignment marks 1244 and 1444. Thus, the depth of focus may be significantly less than 9 μm or may be greater than 9 μm if components adjacent to the metrology pattern 1142 do not interfere with imaging. In the same or different embodiment, other metal or metal alloy components lower in the destination site may be blurred. In an alternative embodiment, the depth of focus is not an issue since there are no significant features in the die to be bonded above the alignment mark, significant features below the alignment mark at the destination site, or a combination of alignment marks and significant features. Significant features are features in the die that interfere with imaging of the alignment mark or metrology pattern.

[0116] After the images are generated, controller 160, a local controller, or a computer external to system 100 can determine the X-direction offset, the Y-direction offset, the rotational offset, or a combination thereof, between metrology pattern 1142 and metrology pattern 1342 in emission areas 3140 and 3240. A human operator may also use the images to instruct controller 160, a local controller, or a computer external to system 100 to measure the X-direction offset, the Y-direction offset, the rotational offset, or a combination thereof, between metrology pattern 1142 and metrology pattern 1342 in emission area 3140, and between metrology pattern 1144 and metrology pattern 1344 in emission area 3240.

[0117] Analysis of the radiation data can also be performed without generating an image. The radiation data is collected by scanning multiple rows in the X direction or multiple columns in the Y direction of the emitting regions 3140 and 3240. The alignment marks 1244 and 1444 absorb, reflect, or absorb and reflect substantially more radiation compared to positions between the alignment marks 1244 and 1444, and transmit substantially more radiation between the alignment marks 1244 and 1444 compared to passing through the alignment marks 1244 and 1444.

[0118] 25-32, when the radiation detector 478 receives the reflected radiation, the alignment marks 1244 and 1444 reflect substantially more radiation than locations where the alignment marks 1244 and 1444 are not present. In an embodiment, the radiation detector 478 may output a relatively high signal when the radiation detector 478 is detecting radiation reflected by the alignment marks 1244 and 1444, and may output a relatively low signal when the radiation detector 478 is detecting radiation reflected between the alignment marks 1244 and 1444. In the case of a radiation detector below the destination substrate 948, the radiation detector detects radiation that is transmitted through the source die 1324 and through some or all of the destination substrate 948 within the metrology patterns 1142 and 1144. In this embodiment, the radiation detector may output a relatively low signal corresponding to alignment marks 1244 and 1444 if present within metrology patterns 1142 and 1144, interconnects 1204 and conductive plug 1206, and may output a relatively high signal if present within metrology patterns 1142 and 1144, interconnects 1204 and conductive plug 1206 when radiation detector 478 is detecting radiation transmitted between alignment marks 1244 and 1444. The examples described below are based on reflected radiation unless explicitly stated to the contrary.

[0119] The controller 160, a local controller, or a computer external to the system 100 uses the difference in signal amplitude and position information to determine the size and location of the alignment marks 1244 and 1444 in the radiation area 3140 in FIG. 31 and the pitch corresponding to the metrology patterns 1142 and 1342, and the size and location of the alignment marks 1244 and 1444 in the radiation area 3240 in FIG. 32 and the pitch corresponding to the metrology patterns 1144 and 1344. The pitch can be the size of the feature and the space between the feature and the immediately adjacent feature in a particular direction, such as the X direction or the Y direction. The X direction pitch can be the same or different than the Y direction pitch. The features can be a pair of alignment marks 1244 or a pair of alignment marks 1444. As a non-limiting example, the radiation data can include a scan along a row of scans that provides a signal similar to that illustrated in FIG. 26. The scan with the maximum signal for the particular alignment mark 1444, alignment mark 2644, is analyzed. Referring to FIG. 26, for a scan, the center 2664 of the signal corresponding to the alignment mark 2644 is at a particular location, such as 2.5 μm from the right side of the emissive region 3140, when the alignment marks 1444 have an X-dimension, such as a width or diameter of 1.0 μm, and an X-dimension space between the alignment marks 1444 of 2.0 μm.

[0120] The Y dimension is obtained by identifying which row the scan belongs to. A scan may represent one or more lines of an image acquired by a CCD or one or more lines acquired by scanning with optics. As a further example, scan 0 may be along the top edge of the emitting region 3140 (closest to the top of FIG. 31), and each subsequent scan is offset in the Y direction by 0.1 μm from the previous scan toward the bottom of FIG. 31. The scan data in FIG. 26 corresponds to scan 97, so the center of the alignment mark is the 97th scan of 0.1 μm / scan, or 9.7 μm, from the top edge of the emitting region 3140. Thus, the center of the particular alignment mark 2644 is 2.5 μm (X coordinate) from the right side of the emitting region and 9.7 μm (Y coordinate) from the top of the emitting region 3140. Other alignment marks in the emitting regions 3140 and 3240 can be analyzed in the same manner.

[0121] 27-32, controller 160, a local controller, or a computer external to system 100 may have some information regarding the arrangement of emission regions 3140 and 3240, e.g., alternating rows or alternating columns of alignment marks 1244 and 1444. Controller 160, a local controller, or a computer external to system 100 may use the X- and Y-coordinates of alignment marks 1244 and 1444 to determine the pitch corresponding to alignment marks 1244 and 1444 and the overlay error based on radiation data collected for emission regions 3140 and 3240.

[0122] Spatial frequency analysis is performed on metrology patterns 1142 and 1342 for radiation data collected from emitting area 3140, and on metrology patterns 1144 and 1344 for radiation data collected from emitting area 3240. Spatial frequency analysis can be performed with or without images of emitting areas 3140 and 3240. Spatial frequency analysis may be performed using a value based on the detected pitch and feature size. The spatial frequency may be set to exclude features such as word lines, bit lines or other interconnects, and isolated features. With the above in mind, the pitch divided by the feature size is the quotient, and the value for the spatial frequency analysis may be the quotient + / - 10% to account for manufacturing or other variations. The value may range from 1.5 to 9.0. In an alternative embodiment, optical techniques may be used to blur features that are in planes of no interest.

[0123] The word lines or bit lines may have no pitch in one of the directions, or if present, a segmented word line or segmented bit line may have a relatively large length in a direction and a relatively small space between segments in the same direction. Thus, for a segmented word line or segmented bit line, the quotient (pitch divided by feature size) will be less than 1.1. The isolated features may have no pitch, or may have a relatively small feature size and a relatively large space between isolated features. If the isolated features have a pitch, the pitch divided by feature size may exceed 10, 50, or more. Also, the isolated features may vary widely in size.

[0124] The X-dimension, the Y-dimension, or both may be as small as 1.0 μm, or as large as 10 μm, 50 μm, or more. The spatial frequency analysis may include lower limits, upper limits, or both for the X-dimension, the Y-dimension, or both. In a non-limiting example, each alignment mark 1244 and 1444 may be designed to have an X-dimension of 1.5 μm and a Y-dimension of 1.5 μm. In practice, the X-dimension and the Y-dimension may vary by up to 0.2 μm due to manufacturing or other variations. Thus, the features have X-dimension and Y-dimension that range from 1.3 μm to 1.7 μm.

[0125] The spatial analysis may be performed on only those features that satisfy one or more of the following: (1) a value associated with the quotient (pitch divided by the size of the feature); (2) the size of the feature (X dimension, Y dimension, or both); (3) another suitable criterion, or a combination thereof.

[0126] The analysis of the radiation data can include comparing the image corresponding to the emission region 3140 to a reference image corresponding to the emission region 3140. The reference image can be an image from a different bonding source die bonded to a destination site of a different destination substrate, where the bonded different dies and different destination sites have no overlay error or have a relatively small overlay error. In the same or another embodiment, the reference image can be a computer-generated image corresponding to zero overlay error. The computer-generated image can be based on theoretical data and does not include actual radiation data from the bonded die. As with the emission region 3140, the analysis of the radiation data can include comparing the image corresponding to the emission region 3240 to a reference image corresponding to the emission region 3240.

[0127] Pattern recognition is useful for both reflected and transmitted radiation modes, and is particularly useful when radiation is transmitted through the destination substrate 948. The metrology patterns 1142 and 1144 may have other features adjacent to or underlying the metrology patterns 1142 and 1144 at the destination site, such as the interconnects 1204 and conductive plugs 1206. Pattern recognition can determine that the other features are not part of the metrology patterns 1142 and 1144, and such other features may be excluded from the analysis when determining the overlay error. In an embodiment, there are no features adjacent to or underlying the metrology patterns in the Z direction. Pattern recognition excludes other features that are not part of the metrology patterns 1142 and 1144.

[0128] As discussed above, different techniques can be performed when analyzing the radiation data or a derivative thereof (e.g., an image generated from the radiation data). The analysis can be performed using any particular technique, or a combination of techniques may be used. The analysis can continue further to determine an overlay error between the source die 1324 and its corresponding destination site.

[0129] As shown in Figures 31 and 32, alignment mark 1244 is offset in both the X and Y directions with respect to alignment mark 1444. Radiation data can be used to determine how far at least a portion of alignment mark 1244 is from alignment mark 1444 or how far at least a portion of alignment mark 1444 is from alignment mark 1244. The following are non-limiting examples intended to illustrate, but not to limit the scope of the invention as defined in the claims. For overlay error, positive values ​​in the X direction are closer to the right side of Figures 31 and 32 and positive values ​​in the Y direction are closer to the top of Figures 31 and 32.

[0130] 31 and 32, each of the alignment marks 1244 and 1444 may have a diameter of 1.0 μm. In the X direction (along a row of alignment marks), the spacing between the alignment marks 1244 is 2.0 μm and the spacing between the alignment marks 1444 is 2.0 μm. The X direction pitch of the alignment marks 1244 is 3.0 μm and the X direction pitch of the alignment marks 1444 is 3.0 μm. In the Y direction (along a column of alignment marks), the spacing between the alignment marks 1244 is 3.0 μm and the spacing between the alignment marks 1444 is 3.0 μm. The Y direction pitch of the alignment marks 1244 is 4.0 μm and the Y direction pitch of the alignment marks 1444 is 4.0 μm.

[0131] Measurement patterns 1142, 1144, 1342, and 1344 are designed such that, in the absence of overlay error, alignment marks 1244 and 1444 are 180° out of phase with each other in each of the X and Y directions. Thus, when alignment marks 1244 and 1444 are 180° out of phase with each other, along a row of alignment marks 1244 (X direction), the center of alignment mark 1244 is 1.5 μm from each of the center lines of alignment marks 1444 defined in the adjacent columns of alignment marks 1444. Along a column of alignment marks 1244 (Y direction), the center of alignment mark 1244 is 2.5 μm from each of the center lines of alignment marks 1444 defined in the adjacent rows of alignment marks 1444.

[0132] Figure 33 illustrates how overlay error can be determined based on the pitch and X-direction offset described above, based on metrology patterns 1142 and 1342. In Figure 33, alignment mark 3344 is a particular one of alignment marks 1444 and is used to improve understanding of how to determine overlay error.

[0133] In the specific example, alignment mark 3344 is 1.2 μm from a line defined by the centers of alignment marks 1244 in the row immediately to the left of alignment mark 3344, and 1.8 μm from a line defined by the centers of alignment marks 1244 in the row immediately to the right of alignment mark 3344. With zero overlay error, both distances would be 1.5 μm. Alignment mark 3344 is 0.3 μm further to the left of FIG. 33 than it should be. Thus, the overlay error is −0.3 μm in the X direction.

[0134] Figure 34 illustrates how overlay error can be determined based on the pitch and Y-offset described above based on metrology patterns 1144 and 1344. In Figure 34, alignment mark 3444 is a particular one of alignment marks 1444 and is used to improve understanding of how to determine overlay error.

[0135] Continuing with the same example, alignment mark 3344 is 2.6 μm from a line defined by the centers of alignment marks 1244 in the row immediately above alignment mark 3344, and 1.4 μm from a line defined by the centers of alignment marks 1244 in the row immediately below alignment mark 3344. With zero overlay error, both distances would be 2.0 μm. Alignment mark 3344 is 0.6 μm toward the bottom of FIG. 34 than it should be. Thus, the overlay error is −0.6 μm in the Y direction. The overlay error between source die 1324 and destination site is −0.3 μm in the X direction and −0.6 μm in the Y direction.

[0136] The overlay error may or may not have a rotational component. For example, a line defined by the centers of the rows or columns of alignment mark 1244 should be parallel to a line defined by the centers of the rows or columns immediately adjacent to alignment mark 1444. If a rotational overlay error is present, the line corresponding to alignment mark 1244 will intersect with the line corresponding to alignment mark 1444. The intersection of the lines will occur within radiating regions 3140 and 3240 or outside one or both of radiating regions 3140 and 3240. In this particular example, there is no rotational overlay error.

[0137] FIG. 35 includes a top view of a portion of the source die 1324 and the destination site, including several bonding contacts 3524. The bonding contacts 3524 include active contact pads 3526 on the source die 1324 and active contact pads 3528 on the destination site. The bonding contacts 3524 correspond to connections where an electrical circuit element or circuit in the source die 1324 is electrically connected to an electrical circuit element or circuit in the destination site. FIG. 35 confirms that the overlay error is significant and the contact resistance of the bonding contacts 3524 is too high. The use of a bad source die and a bad destination die allows an initial overlay error to be determined without affecting the yield of the destination substrate 948. Additionally, the source die 1324, the destination die, or both, may be KGD.

[0138] In an embodiment, the active contact pads 3526 of the source die 1324 have the same size and periodicity as the source die alignment marks 1444. In an embodiment, the active contact pads 3528 of the destination sites have the same size and periodicity as the destination site alignment marks 1244. One of the sets of alignment marks 1244 and 1444 has a different phase relative to the set of active contact pads 3528 and 3526, while the other set of alignment marks 1244 and 1444 has substantially the same phase as the set of active contact pads 3528 and 3526. In an embodiment, the alignment marks and active contact pads on a particular die are fabricated using the same process and have substantially the same patterning errors.

[0139] The method may include determining compensation for the overlay error based at least in part on the overlay error at block 848 in FIG. 8. Continuing with the example, the compensation for the overlay error is the same value as the overlay error when the set of source dies is aligned with the destination, but in the opposite direction to the overlay error. Thus, with respect to the source die, the source die 1324 should be 0.3 μm to the right of FIG. 25 (compensation for an X-direction overlay error of +0.3 μm) and 0.6 μm to the top of FIG. 25 (compensation for a Y-direction overlay error of +0.6 μm). Also, the destination substrate 948 is aligned with respect to the set of source dies. With respect to the destination substrate 948, the destination substrate 948 should be 0.3 μm to the left of FIG. 33 (compensation for an X-direction overlay error of −0.3 μm) and 0.6 μm to the bottom of FIG. 34 (compensation for a Y-direction overlay error of −0.6 μm).

[0140] When positioning the next source die and its corresponding destination site on the destination substrate 948, the next source die should be 0.3 μm to the right of FIG. 33 to compensate for the X-direction overlay error and 0.6 μm to the top of FIG. 34 to compensate for the Y-direction overlay error. The previous example includes many specific details. The overlay error may be determined for multiple alignment marks 1444, not just one alignment mark.

[0141] The method includes determining whether to transfer another set of die to the destination substrate at decision diamond 862 in Figure 8. If more die are to be transferred (the "YES" branch from decision diamond 862 in Figure 8), the method continues starting at block 544 in Figure 5. Many details of the method have been described above, and therefore some details of the method have not been described with respect to the set of die to be transferred to the destination substrate 948.

[0142] The method may further include changing the pitch of the array on the die transfer sheet to a source matching pitch at block 544 in Figure 5. Figure 36 includes a cross-sectional view of a portion of the system at this point in the process. With reference to Figures 22 and 23, a source die 1324 is bonded to the destination site of the bad die 1034. The cross-section in Figure 36 is along a different plane as compared to Figure 22. The source die 1324 is present but not shown in Figure 36.

[0143] 36, the source matching pitch may be the same as the source pitch or within a tolerance of the source pitch. Similar to the source pitch, the source matching pitch may include an X-direction source matching pitch, a Y-direction source matching pitch, or a source matching pitch in both the X and Y directions. For example, the source matching pitch is within 2.0%, 1.0%, or 0.5% of the source pitch.

[0144] The method may include loading a set of dies onto the die transfer sheet at block 546 in FIG. 5. Referring to FIG. 37, the die chuck of the array of die transfer sheet 144 may extend toward the source substrate 922, pick up a set of dies 3724, and pull the die chuck back from the source substrate 922. The set of dies 3724 may be production source KGD. Picking up a set of dies 3724 is a specific type of loading. Another type of loading for the system 100 may load any or all of the die transfer sheet using a loading machine. With respect to the source substrate 922, the dies that are picked up may be the dies that are closest to each other, or one or more other dies may be between the picked up dies, as illustrated in FIG. 37. Within the plurality of dies 924, the dies that are not picked up remain coupled to the source substrate chuck 122, as illustrated in FIG. 37.

[0145] In an embodiment, the die chucks of the array of die transfer sheets 144 do not contact the activated sides of the set of dies 3724. The set of dies 3724 are held by the die chucks, but the set of dies 3724 are depicted in FIG. 37 as spaced apart from the array of die transfer sheets 144 to indicate that the activated sides of the dies do not contact the die transfer sheet. The array of die transfer sheets 144 can have a design that allows for picking up the dies along a side of the die, the side being between the device face and the back face of the die.

[0146] If the dies in the set of dies are too thin to be held by their sides, a backing plate can be bonded to the dies as described above. The backing plate may or may not be removed after the set of dies 3724 is bonded to the destination substrate 948. In another embodiment, the dies in the set of dies 3724 may not have an activated side, but may have relatively fragile features along the side that is bonded to the destination substrate 948, and such side should not contact a die transfer sheet in the array of die transfer sheets 144. A die transfer sheet as described for dies having an activated side is used for dies that have fragile features along the side that faces the die transfer sheet.

[0147] In a further embodiment, the die chuck for the array of die transfer sheets 144 can have a design where the die chuck contacts the underside of the set of dies 3724. After reading this entire specification, one of ordinary skill in the art can determine whether the array of die transfer sheets 144 should contact the device side or the backside of the dies and determine a design that meets the needs and desires of a particular application.

[0148] The method may further include modifying the pitch of the array of die transfer sheets to the bonding head matching pitch at block 622 in FIG. 6. The bonding head matching pitch may be the same as or within an acceptable tolerance to the bonding head pitch of the array of bonding heads 124. The bonding head matching pitch and the bonding head pitch may include an X-direction bonding head matching pitch, a Y-direction bonding head matching pitch, or both an X-direction and a Y-direction bonding head matching pitch. For example, the bonding head matching pitch may be within 2.0%, 1.0%, or 0.5% of the bonding head pitch.

[0149] The method may include moving the carriage to an alignment position in block 642 in Fig. 6. In Fig. 38, the carriage 146 is moved so that the alignment datum 128 is above the optical component 150. The information collected from the optical component 150 is received by the controller 160 or a local controller. The controller 160 or a local controller may use the information for subsequent movement of the carriage 146 to a desired position.

[0150] The method can further include moving the carriage 146 such that the set of dies 3724 is transferred from the array on the die transfer sheet 144 to the array of bonding heads 124. In the embodiment illustrated in Figure 39, the carriage 146 is moved such that the array of bonding heads 124 is above the set of dies 3724. The moving can include moving the carriage 146 in an X direction, a Y direction, rotating the carriage along an XY plane, or a combination thereof.

[0151] The method may further include transferring the set of dies from the array on the die transfer sheet to the array of bonding heads at block 644 in Figure 6. The die chucks for the array on the die transfer sheet 144 may extend toward the array of bonding heads 124, the die chucks for the bonding heads in the array of bonding heads 124 may extend toward the array on the die transfer sheet 144, or both. Figure 40 includes the set of dies 3724 after transferring the set from the array on the die transfer sheet 144 to the array of bonding heads 124.

[0152] The method may include measuring the alignment of the set of dies using optics at block 662 in FIG. 6. An optics 150 coupled to the carriage 146 may be used to position any one or more dies in the set of dies 3724, measure the alignment error of any one or more dies in the set of dies 3724, or both, as illustrated in FIG. 41. Better positioning of the dies may be achieved by measuring the alignment error as the position of each die on each bond head relative to the ideal position of the die on the bond head. Information from the optics 150 is sent to and received by the controller 160 or local controller. The controller 160 or local controller may use the information to determine the alignment error and the amount of positioning of the die such that the die is more closely aligned to its corresponding destination site on the destination substrate 948. The controller 160 or a local controller can send a signal such that the position of each die is adjusted by moving the die chuck of the bonding head with the limited range of movement of the die chuck relative to its corresponding body. Thus, in an embodiment, moving the die chuck allows the position of the die to be adjusted with respect to the destination substrate 948 held by the destination substrate chuck 148. Measurement of the positioning and alignment error may be performed iteratively until the alignment error is zero or an acceptably low value.

[0153] The method includes determining whether to use OEC in decision diamond 722 in Figure 7. The overlay error and corresponding compensation for the overlay error have been determined for the source die 1324 and can be used for the set of die 3724. The method proceeds along the "YES" branch of decision diamond 722.

[0154] The method may further include adjusting the positions of the set of dies or the positions of the destination sites to compensate for the overlay error in block 724 in FIG. 7. Adjusting the positions to compensate for the overlay error may or may not be performed in addition to adjusting the positions to achieve proper alignment. The adjustments may compensate for the overlay error between the source die 1324 and the corresponding destination die, and enable better electrical and physical connections between the active contact pads of the set of dies 3724 and the active contact pads of the destination sites of the destination substrate 948 when the set of dies 3724 is subsequently bonded to the destination substrate 948. Ideally, the compensation for the overlay error completely compensates for the overlay error. However, due to manufacturing variations or differences between the source die and the produced source die, the compensation for the overlay error may under-compensate or over-compensate for the overlay error.

[0155] With respect to die positioning, the compensation for the overlay error is in the opposite direction of the overlay error. For the particular example described with respect to FIG. 33 and FIG. 34, the X-direction overlay error is −0.3 μm and the Y-direction overlay error is −0.6 μm. When positioning the set of dies 3724, the compensation for the X-direction overlay error is +0.3 μm and the compensation for the Y-direction overlay error is +0.6 μm. Before bonding, the position of the set of dies 3724 can be adjusted by moving the set of dies 3724 by +0.3 μm in the X direction and +0.6 μm in the Y direction. Referring briefly to FIG. 43, before bonding the source die 1324, the set of dies 3724 is moved 0.3 μm to the right and 0.6 μm up.

[0156] In an alternative embodiment, instead of positioning the set of dies 3724, the destination substrate 948 may be positioned. With respect to positioning the destination substrate 948, the compensation for the overlay error is in the same direction as the overlay error. When positioning the destination substrate 948, the compensation for the X-direction overlay error is −0.3 μm, and the compensation for the Y-direction overlay error is −0.6 μm. Briefly referring to FIG. 43, before bonding the set of dies 3724, the destination substrate 948 may be moved by −0.3 μm in the X-direction (left) and by −0.6 μm in the Y-direction (down).

[0157] The overlay error may include a rotational component. In an example, the overlay does not include a rotational component. However, in another embodiment, the overlay error may include a rotational component having an angle θ in a counterclockwise direction (−θ). When positioning the set of dies 3724, compensation for the overlay error may rotate the set of dies 3724 by the angle θ in a clockwise direction (+θ). When positioning the destination substrate 948, compensation for the overlay error may rotate the destination substrate 948 by the angle θ in a counterclockwise direction (−θ).

[0158] The method can be used to compensate for X-direction overlay error, Y-direction overlay error, rotational overlay error, or a combination thereof. Compensating for overlay error allows for more accurate bonding of active contact pads between source die and destination sites on a destination substrate. Compensating for overlay error may be performed before or after adjusting the position of the source die 1324 for misalignment (block 662 in FIG. 6) or moving the carriage 146 as described below with respect to block 742 in FIG. 7.

[0159] The method may include moving the carriage so that the array of bonding heads is over the destination substrate in block 742 in Figure 7. The carriage 146 is moved so that the source die 1324 is over the destination site of the destination substrate 948.

[0160] The method may further include bonding the set of dies to corresponding destination sites of the destination substrate at block 744 in FIG. 7. A die chuck for the array of bonding heads 124 may extend towards the destination substrate 948, the destination substrate chuck 148 may extend towards the array of bonding heads 124, or both. In FIG. 42, pressure is applied to bond the set of dies 3724 to corresponding destination sites of the destination substrate 948. In an embodiment, the bonding may be oxide to oxide bonding. The pressure during bonding may be 0.5 N / cm. 2 from 20N / cm 2 The bonding can be performed at room temperature (e.g., at a temperature ranging from 20° C. to 25° C.) or above. The bonding is performed at a lower temperature than the subsequent anneal to expand the conductive metal within the die and at the destination site. The temperature and pressure may be limited depending on the film or components within device 110 present during bonding. For example, the temperature may be about 200° C. or less. After reading this specification, one of ordinary skill in the art will be able to determine the pressure and temperature to be used for bonding.

[0161] 43 includes a top view of the destination substrate chuck 148 and the destination substrate 948 after the set of die 3724 have been bonded to corresponding destination sites on the destination substrate 948. The destination sites are part of the KGD 1024 of the destination substrate 948.

[0162] The method includes determining whether to determine an OEC at decision diamond 762 in FIG. 7. If not ("NO" branch), the method includes determining whether to transfer another set of die to a destination substrate at decision diamond 862 in FIG. 8. If another OEC is determined ("YES" branch of decision diamond 762 in FIG. 7), the method continues starting at block 842 in FIG. 8. FIG. 44 includes a cross-sectional view at this point in the method. The radiation tool 272 can be used to generate radiation data for the set of die 3724. The radiation data for the set of die 3724 and their corresponding destination sites helps determine whether the overlay error changes over time from the time the source die 1324 was bonded. The change is due to vibration or other movement of any one or combination of components in the apparatus 110, a change in temperature in the apparatus 110, or a change in another environmental condition in the apparatus 110. Further, irradiating, collecting and analyzing radiation data for the set of dies 3724 is useful to determine whether compensation for overlay error has been fully compensated, undercompensated, or overcompensated for the overlay error associated with the source die 1324.

[0163] The method continues by applying the metrology pattern, collecting radiation data, and analyzing the radiation as described above with respect to blocks 842, 844, and 846.

[0164] Figure 45 illustrates how overlay error can be determined based on the pitch and X-direction offset described above based on the X-direction metrology pattern of a die in the set of die 3724 and its corresponding destination site. Figure 45 includes a portion of emissive region 4540. The destination site has alignment mark 1244 and a die in the set of die 3724 has alignment mark 1444. In Figure 45, alignment mark 4544 is a particular one of alignment marks 1444 and is used to improve understanding of how to determine overlay error.

[0165] In the specific example, alignment mark 4544 is 1.6 μm from a line defined by the centers of alignment marks 1244 in the row immediately to the left of alignment mark 4544, and 1.4 μm from a line defined by the centers of alignment marks 1244 in the row immediately to the right of alignment mark 4544. With zero overlay error, both distances would be 1.5 μm. Alignment mark 4544 is 0.1 μm to the right of FIG. 45 than it should be. Thus, the overlay error is −0.1 μm in the X direction.

[0166] Figure 46 illustrates how overlay error can be determined based on the pitch and Y-direction offset described above based on a Y-direction metrology pattern of a die and its corresponding destination site in a set of die 3724. Figure 46 includes a portion of radiating region 4640. In Figure 46, alignment mark 4644 is a particular one of alignment marks 1444 and is used to improve understanding of how to determine overlay error.

[0167] In the specific example, alignment mark 4644 is 1.8 μm from a line defined by the centers of alignment marks 1244 in the row immediately above alignment mark 4644, and 2.2 μm from a line defined by the centers of alignment marks 1244 in the row immediately below alignment mark 4644. With zero overlay error, both distances would be 2.0 μm. Alignment mark 4644 is 0.2 μm toward the top of FIG. 43 than it should be. Thus, the overlay error is +0.2 μm in the Y direction.

[0168] The overlay error may or may not have a rotational component, as discussed above. In this particular example, there is no rotational overlay error.

[0169] FIG. 47 includes a top view of a portion of a die in the set of die 3724 and a destination site, including a bonding contact 4724. The bonding contact 4724 includes an active contact pad 4726 of a die in the set of die 3724 and an active contact pad 4728 of the destination site. The bonding contact 4724 corresponds to a connection where an electrical circuit element or circuit in a die in the set of die 3724 is electrically connected to an electrical circuit element or circuit in the destination site. FIG. 47 confirms that the overlay error of the set of die 3724 and their corresponding destination sites is substantially less than the overlay error of die 1324 and their corresponding destination sites. The contact resistance of the bonding contact 4724 is substantially lower compared to the bonding contact 3524 (FIG. 35). An electrical test can be performed to determine whether the active contact pads of the source die in the set of die 3724 and the active contact pads of the KDG 1024 are electrically connected to each other. In this example, the test passes.

[0170] Adjustment using overlay error compensation based on the overlay error between the source die 1324 and its corresponding destination sites may overcompensate for the overlay error in a particular example. In another example with different source dies, adjustment using overlay error compensation may fully compensate or undercompensate for the overlay error between the different source dies and their corresponding destination sites on the destination substrate 948.

[0171] The method may include determining compensation for overlay error based at least in part on the overlay error in block 848 in Figure 8. If more than one set of overlay errors exists, the compensation for overlay error may or may not be updated to account for the new set of overlay errors. One skilled in the art may consider the compensation for overlay error used to position the set of die 3724 and the destination site to be sufficient and not update the compensation for overlay error.

[0172] In a particular example, the overlay error compensation may be updated to better compensate for the overlay error associated with the set of dies 3724. The overlay error compensation used to position the set of dies 3724 and their corresponding destination sites on the destination substrate 948 overcompensates for the overlay error. The updated overlay error compensation may be the sum of the overlay errors. The following is the equation used to determine the overlay error:

[0173] In the X direction: O.E. XU =OE X1 +OE X2 +OE X3 + , where O.E. XU is the updated overlay error in the X direction, O.E. X1 is the overlay error of the first bonded destination site pair, O.E. X2 is the overlay error of the second bonded destination site pair, O.E. X3 is the overlay error of the third bonded destination site pair.

[0174] For the Y direction: O.E. YU =OE Y1 +OE Y2+OE Y3 + , where O.E. YU is the updated overlay error in the Y direction, O.E. Y1 is the overlay error of the first bonded destination site pair, O.E. Y2 is the overlay error of the second bonded destination site pair, O.E. Y3 is the overlay error of the third bonded destination site pair.

[0175] More or fewer overlay error values ​​can be used in the formula.

[0176] When using the overlay errors associated with the set of source die 1324 and die 3724, the updated overlay error is: In the X direction: O.E. XU =OE X1 +OE X2 = (-0.3 μm) + (+0.1 μm) = -0.2 μm, and For the Y direction: O.E. YU =OE Y1 +OE Y2 = (-0.6 μm) + (+0.2 μm) = -0.4 μm, where O.E. X1 and OE Y1 are the X- and Y-direction overlay errors associated with the source die 1324, and OE X2 and OE Y2 are the X- and Y-direction overlay errors associated with a die in the set of source dies 3724.

[0177] The value of the updated overlay error compensation in the X and Y directions depends on whether the next set of dies is positioned or whether the destination substrate 948 is positioned. If the next set of dies is positioned, the compensation of the overlay error is in the opposite direction to the overlay error. When the next set of dies is positioned, the adjustment of the compensation of the overlay error is 0.2 μm to the right (the updated overlay composition in the X direction is +0.2 μm) and 0.4 μm to the top (the updated overlay composition in the Y direction is +0.4 μm). If the destination substrate 948 is positioned, the compensation of the overlay error is in the same direction as the updated overlay error. When the destination substrate 948 is positioned, the adjustment of the compensation of the updated overlay error is 0.2 μm to the left (the updated overlay composition in the X direction is −0.2 μm) and 0.4 μm to the bottom (the updated overlay composition in the Y direction is −0.4 μm).

[0178] The method includes determining whether to transfer another set of die to the destination substrate at decision diamond 862 in Figure 8. If more sets of die are to be transferred (the "YES" branch), the method continues starting at block 544 in Figure 5. If no sets of die are to be transferred (the "NO" branch), the transfer operation is complete and the method of transferring die ends.

[0179] In the previous example, overlay error was determined for each of the dies in the set of source die 1324 and die 3724. Overlay error may or may not be determined for each set of dies from the multiple dies 924 bonded to the destination substrate 948. Increasing the number of overlay error determinations helps provide more information regarding changes due to vibration or other movement of any one or combination of components in the apparatus 110, changes in temperature within the apparatus 110, or changes in another environmental condition within the apparatus 110. The information may or may not also include whether the overlay error depends on the location where the set of dies are bonded to the destination site of the destination substrate (center-to-edge variation relative to the destination substrate).

[0180] While gathering more information is useful, the time spent irradiating the metrology pattern, collecting radiation data, potentially analyzing the radiation data, and determining compensation for overlay error (blocks 842, 844, 846, and 848 in FIG. 8 ) adversely impacts the time elapsed for a transfer operation of a die in multiple dies 924 being transferred to a destination substrate 948. After reading this specification, one of ordinary skill in the art can determine how many times the operations in FIG. 8 should be performed to obtain information while keeping the elapsed time for the transfer operation within a specification or another desired value for a particular application.

[0181] The previous examples with specific numbers are provided to illustrate and improve the understanding of how overlay error is used to determine compensation for overlay error and are not intended to limit the scope of the invention as defined in the claims.

[0182] After all desired source dies (source die and source KGD) are bonded to the destination substrate 948, the hybrid bonding process continues. The hybrid bonding process may include three steps, including a bonding operation, a first anneal to expand and contact the metals with each other within the die and at the destination site, and a second anneal to cause the metal atoms to cross the metal-metal interface and reduce the contact resistance. The methods described above may correspond to the bonding operation of the hybrid bonding process. The destination substrate 948 may be removed from the apparatus 110 or moved to a different part of the apparatus 110 or a different tool to perform the anneal operation.

[0183] The methods described with respect to the process flow diagrams in Figures 5-8 need not be performed in the order shown in such figures. For example, mounting the destination substrate at block 522 may be performed before or after mounting the source substrate at block 524. Additionally, mounting the destination substrate at block 522 and mounting the source substrate at block 524 may be performed such that at least some of the mounting operations are performed simultaneously. As with blocks 522 and 524 in Figure 5, the operations described with respect to blocks 622 (changing pitch for the die transfer sheet) and 642 (moving the carriage) may be performed in either order, or such that at least some of the operations for blocks 622 and 624 are performed simultaneously. As another example, determining compensation for overlay error (block 848 in FIG. 8 ) or both analyzing the radiation data (block 846) and determining compensation for overlay error (block 848) may be performed after determining whether another set of die should be bonded to the destination substrate (diamond 862) and at a later time than determining whether compensation for overlay error should be used for the next set of die to be bonded (diamond 722 in FIG. 7 ). After reading this specification, one of ordinary skill in the art will be able to determine a process flow that meets the needs and desires of a particular application.

[0184] Many of the embodiments described herein are useful for determining overlay error for a die and a destination site on a destination substrate. A source die is bonded to a destination site on a destination substrate. The source die can be a production source die and need not be a dummy source die. The source die may not have interconnects or other features in its metrology pattern that would interfere with the collection of radiation data, and such interconnects or other features may be present in the source die outside of the metrology pattern. In an embodiment, an alignment mark in the metrology pattern of the source die reflects substantially more radiation compared to other portions of the metrology pattern or transmits substantially less radiation compared to other portions of the metrology pattern of the source die.

[0185] The radiation is collected and analyzed. The analysis may or may not include generating an image. If an image is generated, further refinements may or may not be used to improve the image. The imaging may be performed in a focus range that may focus on alignment marks in the source and destination dies and produce an image in which electrical circuit elements and interconnects in the destination die are out of focus or blurred. Pattern recognition may be used so that electrical circuit elements and interconnects under contact pads in the destination die are not taken into account when determining overlay error. Additionally, spatial frequency analysis may be used when imaging or when determining overlay error.

[0186] The metrology patterns of the source die and the corresponding destination site may be sufficiently out of phase to produce a more accurate determination of the overlay error. With reference to FIGS. 31 and 32, alignment marks 1244 and 1444 do not overlap and are approximately 180° out of phase in the same or different embodiments. Compare the metrology patterns to bonding contact 3524 in FIG. 35 and bonding contact 4724 in FIG. 47. If the metrology patterns are designed to maximize the overlap between the alignment marks between the metrology patterns, as with the bonded contact pads illustrated in FIGS. 35 and 47, it is substantially more difficult to determine the overlay error. In many cases, the contact pads are made of the same material, such as Cu or Al-1 wt% Cu. With reference to FIG. 47, the periphery of contact pad 4726 that is above contact pad 4728 is very difficult to detect. Thus, the out of phase arrangement, as illustrated in FIGS. 31 and 32, allows for a more accurate determination of the overlay error.

[0187] The resulting overlay error for the source die and its corresponding destination site may include an X-direction overlay error, a Y-direction overlay error, a rotational overlay error, or a combination thereof. Overlay error compensation can be used for a subsequent source die, such as a source KGD that is bonded to a destination substrate, where the overlay error compensation helps to reduce the overlay error of the subsequent die. Overlay error compensation allows for a larger overlap between the active contact pads of the source KGD and the active contact pads at the destination site of the destination KGD on the destination substrate. The increased overlap between the active contact pads helps to reduce the contact resistance.

[0188] The overlay error of two or more source dies can be obtained to provide information about drift of the device 110, whether there is a center-to-edge variation or other positional relationship to the overlay error relative to where on the destination substrate the source dies are bonded, etc.

[0189] It should be noted that in the general descriptions or examples, not all of the operations described above may be required, some of the specific operations may not be required, and one or more additional operations may be performed in addition to those described. Furthermore, the order in which the operations are listed is not necessarily the order in which they are performed.

[0190] Benefits, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, the benefits, advantages, solutions to problems, and any features that give rise to or make more pronounced any benefit, advantage, or solution should not be construed as critical, required, or essential features of any or all of the claims.

[0191] The specification and figures of the embodiments described herein are intended to provide a general understanding of the structure of the various embodiments. The specification and figures are not intended to be exhaustive and comprehensive descriptions of all of the elements and features of apparatus and systems that use the structures or methods described herein. Separate embodiments may be provided in combination in a single embodiment, and conversely, various features that are described for brevity in the context of a single embodiment may be provided separately or in any subcombination. Furthermore, references to values ​​described in ranges include each and every value within that range. Many other embodiments will become apparent to those skilled in the art only after reading this specification. Other embodiments can be used and derived from this disclosure, such that structural substitutions, logical substitutions, or other changes are made without departing from the scope of the disclosure. Thus, the disclosure should be considered illustrative and not limiting.

Claims

1. 1. A method comprising: bonding a first source die to a first destination site of a destination substrate, the first source die includes a first source active area and a first source boundary area, the first source active area including a first source active contact pad, and the first source boundary area including a first source metrology pattern including a first source alignment mark; the first destination site includes a first destination active area and a first destination border area, the first destination active area including a first destination active contact pad, and the first destination border area including a first destination metrology pattern including a first destination alignment mark; after bonding, the first source active contact pad contacts the first destination active contact pad; collecting first radiation data for at least a portion of the first source metrology pattern and the first destination metrology pattern in a first emission region, the collecting of the first radiation data being performed after bonding the first source die to the first destination site, and wherein the first source alignment mark does not directly overlap or directly underlie any alignment mark of the first destination metrology pattern within the first emission region; analyzing the first radiation data to determine a first overlay error between the first source die and the first destination site; adjusting a position of a second source die or a second destination site of the destination substrate to compensate for the first overlay error between the first source die and the first destination site; 13. A method comprising:

2. irradiating the first radiation region; the first source measurement pattern comprises a set of source alignment marks including the first source alignment mark; the first destination metrology pattern comprises a set of destination alignment marks including the first destination alignment mark; during illumination of the first radiation region, 25% or less of the radiation is transmitted through each of the source alignment mark and the destination alignment mark; 2. The method of claim 1 .

3. 2. The method of claim 1, wherein illuminating the first radiant region is performed with infrared radiation.

4. the first source metrology pattern includes a set of source alignment marks along a first source bonding surface, the set including the first source alignment mark; the first destination metrology pattern includes a set of destination alignment marks along a first destination bonding surface, the set including the first destination alignment mark; 2. The method of claim 1 .

5. 5. The method of claim 4, wherein none of the source alignment marks in the first source metrology pattern contact any of the destination alignment marks in the first destination metrology pattern.

6. the set of source alignment marks includes a source array of dummy contact pads, the first source alignment mark being a dummy contact pad within the source array of dummy contact pads; the first destination metrology pattern includes a destination array of dummy contact pads, and the first destination alignment mark is a particular dummy contact pad within the destination array of dummy contact pads.

5. The method of claim 4.

7. 7. The method of claim 6, wherein the source array is phase shifted with respect to the destination array by an angle ranging from 90 degrees to 270 degrees.

8. irradiating the first radiation region; Within the first emission region, the first source measurement pattern comprises a portion that is relatively opaque to the radiation and a portion that is relatively transparent to the radiation; the relatively non-transparent portion of the first source measurement pattern includes the set of source alignment marks; and the relatively transparent portions of the first source measurement pattern are disposed between the source alignment marks; and the source alignment mark is only within the relatively non-transparent portion, and no source alignment mark is within the relatively transparent portion; 5. The method of claim 4.

9. The method of claim 4 , wherein analyzing comprises analyzing the first radiation data using spatial frequency analysis.

10. each of the first source measurement pattern, the first destination measurement pattern, or the first source measurement pattern and the first destination measurement pattern has a pitch and a particular alignment mark size corresponding to the pitch; a quotient is the pitch divided by the size of the particular alignment mark that corresponds to the pitch; the pitch and the size of the particular alignment mark corresponding to the pitch correspond to values ​​in a frequency domain; The value is the quotient + / - 10% of the quotient and ranges from 1.5 to 9.

0.

10. The method of claim 9.

11. irradiating the first radiation region; collecting radiation data is performed using a radiation detector; The radiation detector has a maximum depth of focus of 9 μm.

2. The method of claim 1 .

12. the first destination boundary area is disposed between a first dicing lane and the first destination active area; none of the first destination active areas are located between the first dicing lane and the first destination border area; 2. The method of claim 1 .

13. bonding the second source die to the second destination site of the destination substrate, the second source die including a second source metrology pattern, the second destination site including a second destination metrology pattern, the second source metrology pattern being identical to the first source metrology pattern, and the second destination metrology pattern being identical to the first destination metrology pattern; collecting second radiation data for at least a portion of the second source measurement pattern and the second destination measurement pattern within a second emission region, the collecting of the second radiation data being performed after bonding the second source die to the second destination site; analyzing the second radiation data to determine a second overlay error between the second source die and the second destination site; 2. The method of claim 1, further comprising:

14. the first overlay error is in a first direction; the second overlay error is in a second direction different from the first direction.

14. The method of claim 13.

15. the first overlay error is in a first direction; the second overlay error is in a second direction that is the same as the first direction.

14. The method of claim 13.

16. the first source die and the second source die are different source dies; the first destination site and the second destination site are different destination sites; 14. The method of claim 13.

17. 20. The method of claim 16, wherein the first source die and the second source die have identical electrical circuitry.

18. 14. The method of claim 13, further comprising determining an updated overlay error that is the sum of the first overlay error and the second overlay error.

19. the method further comprising testing the combination of the second source die and the second destination die using an electrical test to determine whether a second source active contact pad of the second source die and a second destination active contact pad of the second destination site are electrically connected to each other; the combination of the second source die and the second destination die passes the electrical test.

14. The method of claim 13.

20. the first source die is a defective source die; the first destination site is at least a portion of a defective destination die; 2. The method of claim 1 .

21. the second source die is a known good source die; the second destination site is at least a portion of a known good destination die; 21. The method of claim 20.

Images