Method and system for line purge

Abstract

To provide a method and a system for line purge.SOLUTION: A method of purging in a deposition apparatus and associated system is disclosed. Embodiments of the present disclosure include measuring a concentration of the precursor residue in the exhaust gas stream and terminating the purge when the concentration of the precursor residue in the exhaust gas stream is less than or equal to a reference concentration of the precursor residue.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD OF THEINVENTION FIELD OF THE DISCLOSURE This disclosure is in the field of semiconductor deposition equipment and preventative maintenance thereof. [Background technology]

[0002] Background of the disclosure In precursor-consuming equipment, such as semiconductor deposition equipment, precursor lines require periodic purging, for example during preventive maintenance. During preventive maintenance, substantially complete removal of precursors can be paramount for safety reasons. Unfortunately, substantially complete removal of precursors can take a lot of time. Thus, there is a need for methods and systems that allow precursors to be purged from the lines more quickly. Summary of the Invention [Means for solving the problem]

[0003] Disclosure Summary a precursor delivery system constructed and arranged to receive a precursor source comprising a precursor; a reaction chamber fluidly connected to the precursor source by a precursor line for delivering the precursor from the precursor source to the reaction chamber; a purge gas delivery system constructed and arranged to operatively connect to a purge gas source comprising a purge gas (the purge gas source constructed and arranged to deliver a purge gas flow to at least one of the reaction chamber and the precursor line); an exhaust line constructed and arranged to receive an exhaust gas flow from at least one of the precursor line and the reaction chamber (the exhaust gas flow comprising the precursor and the purge gas); and a controller comprising a memory containing computer readable instructions that, when executed, cause the system to initiate a purge at a predetermined purge start time, the purge including providing a purge gas flow to at least one of the reaction chamber and the precursor line, compare the concentration of the precursor in the exhaust gas stream to a reference concentration of the precursor, continue the purge when the concentration of the precursor in the exhaust gas stream exceeds the reference concentration of the precursor, and terminate the purge when the concentration of the precursor in the exhaust gas stream is equal to or less than the reference concentration of the precursor.

[0004] In some embodiments, the precursor comprises a metal.

[0005] In some embodiments, the precursor comprises an element selected from Si, Ge, Sn, Se, and Te.

[0006] In some embodiments, the precursor comprises a halide.

[0007] In some embodiments, the precursor comprises one or more ligands.

[0008] In some embodiments, the one or more ligands are selected from the list consisting of alkyl, alkenyl, aryl, dienyl, amine, amide, and beta-diketonate.

[0009] In some embodiments, the precursor comprises a pnictogen hydride.

[0010] In some embodiments, the reaction chamber comprises a showerhead injector and a substrate support.

[0011] In some embodiments, the system comprises a plasma source, where the system can be constructed and arranged to contact the substrate with one or more reactive species, the one or more reactive species comprising at least one of ions and radicals.

[0012] Further described herein is a method of purging in a deposition apparatus, the method including: supplying a purge gas flow to at least one of a reaction chamber and a precursor line, thereby removing precursor residues from at least one of the reaction chamber and the precursor line; removing an exhaust gas flow (the exhaust gas flow including the purge gas flow and precursor residues) from at least one of the reaction chamber and the precursor line by an exhaust line; measuring a concentration of precursor residues in the exhaust gas flow by a residual gas analyzer; comparing the concentration of precursor residues in the exhaust gas flow to a reference concentration of precursor residues by a controller; continuing to supply the purge gas flow when the concentration of precursor residues in the exhaust gas flow exceeds the reference concentration of precursor residues; and terminating the supply of the purge gas flow when the concentration of precursor residues in the exhaust gas flow is equal to or less than the reference concentration of precursor residues.

[0013] In some embodiments, the purge gas stream comprises one or more inert gases.

[0014] In some embodiments, the one or more inert gases include one or more of N2 and a noble gas.

[0015] In some embodiments, the noble gas comprises argon.

[0016] In some embodiments, the purge gas flow includes one or more reactive gases.

[0017] In some embodiments, the one or more reactive gases include oxygen.

[0018] In some embodiments, the precursor residue comprises one or more materials selected from precursors, ligands, reaction products, and combustion products.

[0019] In some embodiments, the precursor residues include one or more of CO2, CH4, and HCl.

[0020] Further described herein is a method of switching a precursor container in a deposition apparatus, the method including: closing a used precursor container from a precursor line included in the system (the precursor line is in fluid connection with a reaction chamber included in the system) using a precursor container valve; purging at least one of the precursor line and the reaction chamber by a method described herein; removing the used precursor container from the system; and installing a new precursor container in the system.

[0021] This Summary is provided to introduce a selection of concepts in a simplified form that are described in more detail below in the Detailed Description of Example Embodiments of the Disclosure. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Brief description of the drawings]

[0022] [Figure 1] 1, 2, and 4 illustrate embodiments of the methods described herein. [Diagram 2] 1, 2, and 4 illustrate embodiments of the methods described herein. [Diagram 3] FIG. 3 illustrates an embodiment of a system described herein. [Figure 4]1, 2, and 4 illustrate embodiments of the methods described herein. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] It should be understood that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale, for example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of the illustrated embodiments of the present disclosure.

[0024] DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS Although certain specific embodiments and examples are disclosed below, it will be understood by those skilled in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, and obvious modifications and equivalents thereof, and therefore it is not intended that the scope of the disclosed invention should be limited by the specific disclosed embodiments described below.

[0025] As used herein, the term "substrate" may refer to any underlying material or materials, including any underlying material or materials, that may be modified or upon which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous, rigid or flexible, solid or porous, and combinations thereof. The substrate may be in any form, such as a powder, a plate, or a workpiece. Substrates in the form of plates may include wafers of various shapes and sizes. Substrates may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0026] As an example, the substrate in the form of a powder may have applications for pharmaceutical manufacturing. The porous substrate may include a polymer. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0027] The continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs. In some processes, the continuous substrate may move through the process chamber, whereby the process continues until the end of the substrate is reached. The continuous substrate may be fed from a continuous substrate feed system to enable the production and output of a continuous substrate in any suitable form.

[0028] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic fibers, or polymeric fibers). Continuous substrates may also include carriers, or sheets, onto which the non-continuous substrates are placed.

[0029] The illustrations presented herein are not meant to be actual representations of any particular materials, structures, or devices, but merely idealized representations used to describe embodiments of the present disclosure.

[0030] The particular implementations shown and described are illustrative of the invention and its best mode and are not intended to otherwise limit the scope of aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, association, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent example functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships or physical connections may be present in an actual system and / or may not be present in some embodiments.

[0031] It should be understood that the configurations and / or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be taken in a limiting sense, as numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Thus, the various illustrated operations may be performed in the order illustrated, in other orders, or omitted in some cases.

[0032] The subject matter of the present disclosure includes all novel and non-obvious combinations and subcombinations of the various processes, systems, and configurations, and other features, functions, operations and / or properties disclosed herein, as well as all equivalents thereof.

[0033] Semiconductor deposition equipment is becoming increasingly complex. This complexity results in periodic maintenance being performed. One maintenance procedure that may occur periodically is precursor container replacement, where an exhausted precursor container is isolated and a new precursor container is installed. Such precursor container replacement can be time consuming due to the need to remove precursors and other dangerous species from the precursor line in order to safely replace the precursor container. The embodiments of the subject matter of the present disclosure allow for fast and safe precursor container replacement.

[0034] Surface-limited deposition processes, such as atomic layer deposition, include many purge steps. These purge steps are time-consuming and use high flow rates of purge gas. To reduce the consumption of purge gas, it is desirable to reduce the purge time. Embodiments of the subject matter of the present disclosure allow for a reduction in purge gas consumption.

[0035] With reference to FIG. 1, a method of purging in a deposition apparatus, such as a semiconductor deposition apparatus, is described herein. The method includes providing 110 a purge gas flow. The purge gas flow can be provided to a reaction chamber, a precursor line, or both. Thus, precursor residues can be removed from the reaction chamber, from the precursor line, or both. In some embodiments, the precursor residues include one or more of precursor vapor, particulate matter, and physisorbed precursors. Upon entraining or entraining the precursor residues, the purge gas can form an exhaust gas flow, which can be removed 120 from the apparatus, for example, from the reaction chamber, from the precursor line, or both. For example, the exhaust gas flow can be removed by an exhaust line. The method of FIG. 1 further includes measuring 130 a concentration of the precursor in the exhaust gas flow by a residual gas analyzer. The method of FIG. 1 further includes comparing 140 the concentration of the precursor in the exhaust gas flow to a reference concentration of the precursor. The method of FIG. 1 further includes evaluating 150 whether the concentration of the precursor in the exhaust gas flow exceeds a reference concentration of the precursor. If the concentration of the precursor in the exhaust gas stream exceeds the reference concentration of the precursor, the method of Figure 1 includes continuing to provide the purge gas flow 110. If the concentration of the precursor in the exhaust gas stream is equal to or less than the reference concentration of the precursor, the method of Figure 1 includes terminating the provision of the purge gas flow 160, thereby terminating the method.

[0036] For example, the reference concentration of the precursor may be the detection limit of a residual gas analyzer, or 150% of the detection limit of the residual gas analyzer, or 300% of the detection limit of the residual gas analyzer, or another suitable value. It is noted that residual gas analyzers include gas detectors such as mass spectrometers and Fourier transform infrared spectroscopy, which are themselves known in the art.

[0037] The method according to the embodiment of Figure 1 may be advantageously employed during maintenance, for example, scheduled or unscheduled maintenance, and in fact, by purging only as necessary, maintenance time can be minimized.

[0038] Therefore, with reference to FIG. 2, a method of switching precursor containers in a deposition apparatus is further described herein. The method includes closing 210 a used precursor container from a precursor line included in the system, for example, using a precursor container valve. The precursor line may be in fluid connection with a reaction chamber included in the system. The method of FIG. 2 further includes purging 220 at least one of the precursor line and the reaction chamber by a method described herein. The method of FIG. 2 further includes removing 230 the used precursor container from the system. The method of FIG. 2 further includes installing 240 a new precursor container in the system. Thus, purge times and, consequently, maintenance times can be minimized.

[0039] The method according to the embodiment of FIG. 1 can advantageously be employed during an atomic layer deposition process, i.e. dynamically adapting the purge time during the process. Therefore, the purge time, and therefore the duration of the process, can be minimized. Additionally or alternatively, the drift of the process can be minimized. In fact, by cross-referencing the film properties and the exhaust gas content during the purge, it is possible to estimate how much purge is required, in terms of by-product content in the exhaust gas. Knowing that value, it can be adopted as a reference value in a feedback loop, so that it can be used to dynamically control the purge time to make the process time and process gas consumption as efficient as possible.

[0040] An embodiment of an atomic layer deposition process is illustrated with the aid of FIG. 4. The method includes positioning 411 a substrate on a substrate support contained within a reaction chamber. The method then includes a cyclical vapor deposition process 416 that includes repeatedly performing a plurality of cycles. One from each of the plurality of cycles includes a precursor pulse 412 and a reactant pulse 414. Subsequent precursor pulses 412 and reactant pulses 414 are separated by purges 413, 415 to prevent vapor mixing between the precursors and reactants. The reactant pulses include exposing the substrate to a reactant, such as an oxygen reactant, such as oxygen, or a nitrogen reactant, such as ammonia. The precursor pulses include exposing the substrate to a precursor, such as a metal precursor. The cyclical deposition process 416 can be performed until a material having a desired thickness is deposited. After a material having a desired thickness is deposited, the method ends 417. Of course, one or more of the cycles can optionally include further pulses, such as one or more further precursor pulses and one or more further reactant pulses, which in turn can be separated from the other reactant and precursor pulses by a purge.

[0041] In some embodiments, the precursor residue comprises one or more materials selected from precursors, ligands, reaction products, and combustion products.

[0042] In some embodiments, the precursor residues include one or more of CO2, CH4, and HCl.

[0043] The ligands may include alkanes, alkenes, aromatic compounds, amines, amides, and beta-diketones, among others.

[0044] In some embodiments, the precursor residues include one or more combustion products, such as nitrogen oxides, CO2, and H2O.

[0045] Such precursors are known in the art and include metal precursors such as transition metal precursors, rare earth metal precursors, and post-transition metal precursors. Precursors can include alkyls, alkenyls, aryls, amines, amides, metal-pi complexes, amidinates, and beta-diketonates, among others.

[0046] In some embodiments, the precursor comprises a metal.

[0047] In some embodiments, the precursor comprises an element selected from Si, Ge, Sn, Se, and Te.

[0048] In some embodiments, the precursor comprises a halide.

[0049] In some embodiments, the precursor comprises one or more ligands, hi some embodiments, the one or more ligands are selected from the list consisting of alkyl, alkenyl, aryl, dienyl, amine, amide, and beta-diketonate.

[0050] In some embodiments, the precursor comprises a pnictogen hydride. Suitable pnictogen hydrides may include phosphine and arsine.

[0051] In some embodiments, the purge gas flow includes one or more inert gases. Suitable inert gases can include one or more of N2 and noble gases. Suitable noble gases can be selected from helium, neon, argon, krypton, and xenon.

[0052] In some embodiments, the one or more inert gases include one or more of N2 and a noble gas. In some embodiments, the noble gas is selected from He, Ne, Ar, Kr, and Xe. In some embodiments, the noble gas includes argon.

[0053] In some embodiments, the purge gas flow includes one or more reactive gases. In some embodiments, the one or more reactive gases are selected from oxygen, halogens, nitrogen, radicals, and carbon reactants. In some embodiments, the one or more reactive gases can at least partially volatilize and / or entrain the precursor residues by reacting with the precursor residues.

[0054] In some embodiments, the one or more reactive gases include oxygen.

[0055] In some embodiments, the purge gas comprises an oxygen species, which may be selected from H2O, O2, and O3.

[0056] In some embodiments, the purge gas comprises a halogen. Suitable halogens include fluorine, chlorine, bromine, and iodine.

[0057] In some embodiments, the purge gas comprises a nitrogen species such as ammonia or hydrazine or an alkyl-substituted hydrazine derivative.

[0058] In some embodiments, the purge gas includes radicals, such as hydrogen radicals, oxygen radicals, or nitrogen radicals.

[0059] In some embodiments, the purge gas includes a carbon reactant, such as methane.

[0060] The method of purging in a semiconductor deposition apparatus described herein can be advantageously employed to speed up the replacement of an empty precursor container. Thus, a method of switching precursor containers in a deposition apparatus is described herein. The method includes closing a used precursor container from a precursor line included in the system using a precursor container valve. The precursor line is in fluid communication with a reaction chamber included in the system. The method further includes purging at least one of the precursor line and the reaction chamber by the method described herein. After the purging is completed, the method further includes removing the used precursor container from the system and installing a new precursor container in the system.

[0061] With reference to FIG. 3, an embodiment of a deposition apparatus is further described herein. The deposition apparatus comprises a precursor source 310. The precursor source 310 can be operatively connected to a precursor delivery system constructed and arranged to receive the precursor source 310. The precursor source 310 includes a precursor 311. Some suitable precursors 311 are described elsewhere herein. The deposition apparatus further comprises a reaction chamber 320. The reaction chamber 320 can comprise, for example, an atomic layer deposition reaction chamber or a chemical vapor deposition reaction chamber. In some embodiments (not shown), the reaction chamber comprises a showerhead injector and a substrate support. For example, the deposition apparatus can further comprise a plasma source (not shown) constructed and arranged to generate a plasma. Activated species, such as ions and radicals, can be generated in the plasma. The substrate can be contacted with the activated species when contained within the reaction chamber 320. The reaction chamber 320 is fluidly connected to the precursor source 310 by a precursor line 330 to supply the precursor 311 from the precursor source 310 to the reaction chamber 320. The deposition apparatus further comprises a purge gas delivery system, for example comprising a purge line 350 constructed and arranged to operably couple to a purge gas source 340. The purge gas source 340 further comprises a purge gas 341. As shown, the purge gas source 340 is constructed and arranged to supply a purge gas flow to the precursor line 330. Additionally or alternatively, the purge gas source 340 can be constructed and arranged to supply a purge gas flow to the reaction chamber 320. For example, the purge gas source 340 can be connected to the precursor line 330 by a purge line 350. The deposition apparatus further comprises an exhaust line 360. The exhaust line 360 ​​is constructed and arranged to receive an exhaust gas flow from at least one of the precursor line 330 and the reaction chamber 320. In the illustrated embodiment, the exhaust line 360 ​​is fluidly connected to the reaction chamber 320. In some embodiments (not shown), the exhaust line 360 ​​is fluidly connected to the precursor line 350. In some embodiments (not shown), the exhaust line 360 ​​is fluidly connected to the reaction chamber 320 and the precursor line 350 .

[0062] The deposition apparatus further comprises a residual gas analyzer 370. The residual gas analyzer 370 is constructed and arranged to measure the concentration of precursors in the exhaust gas stream. In some embodiments (not shown), the residual gas analyzer is included in the exhaust line 360. In some embodiments (shown), the residual gas analyzer 370 is included in a bypass 361 that branches off from the exhaust line 360.

[0063] The deposition apparatus further comprises a controller 380. The controller can comprise a memory that can include computer readable instructions that, when executed, cause the system to initiate a purge at a predetermined purge start time (wherein the purge includes providing a purge gas flow to at least one of the reaction chamber and the precursor line), compare the concentration of the precursor in the exhaust gas stream to a reference concentration of the precursor, continue the purge when the concentration of the precursor in the exhaust gas stream exceeds the reference concentration of the precursor, and terminate the purge when the concentration of the precursor in the exhaust gas stream is equal to or less than the reference concentration of the precursor.

[0064] In some embodiments, the deposition apparatus described herein may further comprise a plasma source. Suitable plasma sources include capacitive plasma sources, microwave plasma sources, and inductively coupled plasma sources. In some embodiments, the system is constructed and arranged to contact the substrate with one or more reactive species. The one or more reactive species may include at least one of ions and radicals. The ions and radicals may be generated in particular in the plasma. [Explanation of symbols]

[0065] 310 Precursor Source 311 Precursor 320 Reaction Chamber 330 Precursor Line 340 Purge gas source 341 Purge Gas 350 Purge Line 360 Exhaust Line 361 Bypass 370 Residual Gas Analyzer 380 Controller

Claims

1. 1. A system comprising: a precursor delivery system constructed and arranged to receive a precursor source comprising a precursor; a reaction chamber fluidly connected to the precursor source by a precursor line for supplying the precursor from the precursor source to the reaction chamber; a purge gas delivery system constructed and arranged to operably connect to a purge gas source containing a purge gas, the purge gas source constructed and arranged to supply a purge gas flow to at least one of the reaction chamber and the precursor line; an exhaust line constructed and arranged to receive an exhaust gas flow from at least one of the precursor line and the reaction chamber, the exhaust gas flow including the precursor and the purge gas; a residual gas analyzer constructed and arranged to measure the concentration of said precursor in said exhaust gas stream; computer readable instructions that, when executed, cause the system to: initiating a purge at a predetermined purge start time, the purge including supplying the purge gas flow to at least one of the reaction chamber and the precursor lines; comparing the concentration of the precursor in the exhaust gas stream to a reference concentration of the precursor; continuing said purging when the concentration of said precursor in said exhaust gas stream exceeds a reference concentration of said precursor; and and terminating the purging when a concentration of the precursor in the exhaust gas stream is below a reference concentration of the precursor.

2. The system of claim 1 , wherein the precursor comprises a metal.

3. The system of claim 1 , wherein the precursor comprises an element selected from Si, Ge, Sn, Se, and Te.

4. The system of any one of claims 1 to 3, wherein the precursor comprises a halide.

5. The system of any one of claims 1 to 3, wherein the precursor comprises one or more ligands.

6. The system of claim 5 , wherein the one or more ligands are selected from the list consisting of alkyl, alkenyl, aryl, dienyl, amine, amide, and beta-diketonate.

7. The system of claim 1 , wherein the precursor comprises a pnictogen hydride.

8. The system of any one of claims 1 to 3 and 7, wherein the reaction chamber comprises a showerhead injector and a substrate support.

9. 8. The system of any one of claims 1-3 and 7, further comprising a plasma source constructed and arranged to contact the substrate with one or more reactive species, the one or more reactive species comprising at least one of ions and radicals.

10. 1. A method for purging in a deposition apparatus, comprising: providing a purge gas flow to at least one of a reaction chamber and a precursor line, thereby removing precursor residues from said reaction chamber and at least one of said precursor lines; removing an exhaust gas stream from at least one of the reaction chamber and the precursor line by an exhaust line, the exhaust gas stream including the purge gas stream and the precursor residue; measuring a concentration of precursor residues in the exhaust gas stream with a residual gas analyzer; comparing, by a controller, the concentration of the precursor residue in the exhaust gas stream to a reference concentration of precursor residue; continuing to provide the purge gas flow when the concentration of the precursor residue in the exhaust gas flow exceeds the reference concentration of the precursor residue; and terminating the supply of the purge gas flow when a concentration of the precursor residue in the exhaust gas stream is equal to or less than a reference concentration of the precursor residue.

11. The method of claim 10 , wherein the purge gas stream comprises one or more inert gases.

12. The one or more inert gases are N ２ and a noble gas.

13. The method of claim 12 , wherein the noble gas comprises argon.

14. The method of claim 10 , wherein the purge gas flow comprises one or more reactive gases.

15. The method of claim 14 , wherein the one or more reactive gases comprise oxygen.

16. The method of any one of claims 10 to 15, wherein the precursor residue comprises one or more substances selected from precursors, ligands, reaction products, and combustion products.

17. The precursor residue is CO ２ , C.H. ４ 17. The method of claim 16, comprising one or more of:

18. 1. A method for switching precursor containers in a deposition apparatus, comprising: closing a used precursor container from a precursor line included in the system using a precursor container valve, the precursor line being in fluid communication with a reaction chamber included in the system; Purging at least one of the precursor lines and the reaction chamber by the method according to any one of claims 10 to 15, removing the spent precursor container from the system; and installing a new precursor container into said system.

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