Reflection type phase difference structure and method for manufacturing the same

Abstract

To provide a reflection type phase difference structure that has uniform characteristics in a wide band.SOLUTION: A reflection type phase difference structure 200 has a lamination structure of a metal reflective layer 210 and an anisotropic structure layer 230. The anisotropic structure layer 230 includes a plurality of metal components 232 formed of aluminum-based metal, and dielectric filling members 234 each filling a gap between the plurality of metal components 232.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a reflective retardation structure.

Background Art

[0002] In the field of optics, optical phase control is an important technology. As an optical member for controlling the phase of light, wave plates such as quarter-wave plates and half-wave plates are widely used.

[0003] By forming an anisotropic structure on the surface of an object by microfabrication, the function of a retardation plate can be realized.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Conventionally, in a reflective retardation structure, since the wavelength characteristics are determined by the material used, it has been difficult to obtain uniform characteristics over a wide band.

[0006] The present disclosure has been made in view of such problems, and an exemplary object of one of its aspects is to provide a reflective retardation structure having uniform characteristics over a wide band.

Means for Solving the Problems

[0007] One aspect of the present disclosure relates to a reflective retardation structure. The reflective retardation structure includes a metal reflection layer, and an anisotropic structure layer including a plurality of metal components made of an aluminum-based metal and a dielectric filling member that fills gaps between the plurality of metal components.

[0008] Another aspect of the present disclosure relates to a method for manufacturing a reflective retardation structure. The manufacturing method includes a step of forming a metal layer, a step of forming an anisotropic structure layer including a plurality of metal components made of an aluminum-based metal on the metal layer, and a step of forming a dielectric filling member that fills gaps between the plurality of metal components by atomic layer deposition.

[0009] In addition, combinations of the above components arbitrarily, and those obtained by mutually substituting the components and expressions of the present disclosure among methods, apparatuses, systems, etc. are also effective as aspects of the present disclosure.

Advantages of the Invention

[0010] According to an aspect of the present disclosure, a reflective retardation structure having broadband and uniform characteristics can be provided.

Brief Description of the Drawings

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Mode for Carrying Out the Invention

[0012] (Outline of the Embodiment) An overview of some exemplary embodiments of the present disclosure is described. This overview is for the purpose of providing a basic understanding of the embodiments as a prelude to the detailed description that follows, and simplifies and describes some concepts of one or more embodiments. It does not limit the scope of the invention or disclosure. Also, this overview is not an all-inclusive overview of all possible embodiments and does not limit the essential components of the embodiments. For convenience, "one embodiment" may be used to refer to one embodiment (example or variant) or a plurality of embodiments (examples or variants) disclosed herein.

[0013] A reflective retardation structure according to one embodiment includes a metal reflective layer and an anisotropic structure layer including a plurality of metal components made of an aluminum-based metal and a dielectric filling member that fills the gaps between the plurality of metal components.

[0014] As the material of the components of the anisotropic structure layer, instead of general metasurface materials such as Au and Ag, an aluminum-based metal is used, and by optimizing the dimensions of the metal components, uniform characteristics can be obtained over a wide wavelength band in the visible region. Also, by adding a dielectric filling member that fills the gaps between the plurality of metal components, the dispersion of the retardation can be reduced.

[0015] Note that the retardation structure can be evaluated by its retardation characteristics and reflectance characteristics. Ideally, uniform retardation characteristics and uniform reflectance characteristics are desirable, but depending on the application, priority may be given to the uniformity of either one of them in some cases.

[0016] In one embodiment, the reflective retardation structure may further include a dielectric protective layer formed on the upper layer of the anisotropic structure layer. By adding a dielectric protective layer and optimizing its thickness, the dispersion of the retardation can be adjusted to obtain more uniform characteristics.

[0017] In one embodiment, the dielectric filling member and the dielectric protective layer may be made of the same material.

[0018] The method for manufacturing a reflective retardation structure according to an embodiment may include a step of forming a dielectric filling member by an atomic layer deposition method.

[0019] The method for manufacturing a reflective retardation structure according to an embodiment includes a step of forming a metal layer, a step of forming an anisotropic structure layer including a plurality of metal components made of an aluminum-based metal on the metal layer, and a step of forming a dielectric filling member that fills gaps between the plurality of metal components by an atomic layer deposition method.

[0020] In one embodiment, the step of forming the anisotropic structure layer may include a step of forming a mask structure for dry etching on the upper side of the metal layer by an exposure process, and a step of patterning the metal layer by dry etching using the mask structure.

[0021] (Embodiment) Hereinafter, preferred embodiments will be described with reference to the drawings. The same or equivalent components, members, and processes shown in each drawing are denoted by the same reference numerals, and repeated descriptions will be omitted as appropriate. Also, the embodiments are illustrative rather than limiting the disclosure or the invention, and not all features or combinations thereof described in the embodiments are necessarily essential to the disclosure or the invention.

[0022] Also, the dimensions (thickness, length, width, etc.) of each member shown in the drawings may be enlarged or reduced as appropriate for ease of understanding. Furthermore, the dimensions of a plurality of members do not necessarily represent their size relationships. On the drawing, even if a member A is drawn thicker than another member B, member A may be thinner than member B.

[0023] FIG. 1 is a perspective view of a reflective retardation structure 200 according to an embodiment. The reflective retardation structure 200 has a laminated structure including a metal reflective layer 210, an anisotropic structure layer 230, and a dielectric protective layer 240.

[0024] As materials for the metal reflective layer 210, Ag, Al, etc. are suitable in the visible range. When designing assuming near-infrared, Au, Cu, etc. can be used. When high reflectivity is not required, Cr, Ni, Fe, etc. may be used. The metal reflective layer 210 is formed on the surface of a substrate (not shown) or the surface of another member to which the function of a retardation plate is to be imparted.

[0025] The anisotropic structure layer 230 has different structures with respect to the first direction (x-direction) and the second direction (y-direction) which are perpendicular to each other in the plane (x-y) of the reflective retardation structure 200. The anisotropic structure layer 230 includes a plurality of metal components 232. In the present embodiment, the anisotropic structure layer 230 has a wire grid structure (line and space structure), and the plurality of metal components 232 are a plurality of wire grids extending in the y-direction and adjacent in the x-direction.

[0026] By setting the pitch of the line / space (L / S) of the anisotropic structure layer 230 to be 1 / 2 or less of the wavelength λ used by the reflective retardation structure 200, it is possible to suppress higher-order diffracted light and improve the light utilization efficiency. However, depending on the broadband characteristics or the convenience of the manufacturing process, a larger pitch, for example, on the order of the used wavelength λ (for example, 0.5λ to 1.5λ), may also be designed.

[0027] The metal component 232 of the anisotropic structure layer 230 is made of an aluminum (Al)-based metal. The aluminum-based metal means a metal containing at least aluminum, and may include pure aluminum, aluminum mixed with impurities, aluminum alloys having aluminum as the main component, etc. In short, the aluminum-based metal can contain other materials as long as it has aluminum as the main component and does not impair the optical properties of pure aluminum or can obtain optical properties equivalent thereto.

[0028] The anisotropic structure layer 230 further includes a dielectric filling member 234 that fills the gaps between the plurality of metal components 232.

[0029] On the upper layer of the anisotropic structure layer 230, a dielectric protection layer 240 is formed. That is, the reflective retardation structure 200 has a laminated structure in which the metal reflective layer 210, the anisotropic structure layer 230, and the dielectric protection layer 240 are laminated in this order.

[0030] The dielectric filling member 234 and the dielectric protection layer 240 may be made of the same material or different materials. As the materials for the dielectric filling member 234 and the dielectric protection layer 240, SiO 2 , TiO 2 , MgF 2 , Al 2 O 3 , MgO, Y 2 O 3 , HfO 2 , ZrO 2 , Ta 2 O 5 etc. can be used.

[0031] Figure 2 is a cross-sectional view of the reflective retardation structure 200 in Figure 1. The reflective retardation structure 200 can design its optical characteristics using the structure and size (height d 2 and line width Wl, space width Ws) of the metal component 232 of the anisotropic structure layer 230, the material of the dielectric filling member 234, and the thickness d 3 and material of the dielectric protection layer 240 as parameters.

[0032] Subsequently, a design example of the reflective retardation structure 200 will be described based on simulation results. To clarify the characteristics of the reflective retardation structure 200, several comparative techniques will be referred to.

[0033] Figure 3 is a cross-sectional view of the reflective retardation structure 200R according to Comparative Technique 1. The reflective retardation structure 200R according to Comparative Technique 1 further includes a dielectric spacer layer 220 inserted between the metal reflective layer 210 and the anisotropic structure layer 230. Let the thickness of the dielectric spacer layer 220 be d 1 . The reflective retardation structure 200 according to the embodiment can be understood as a structure in which d 1 = 0 in Comparative Technique 1.

[0034] In the simulation, as the optical characteristics of the reflective retardation structure, the reflectance R of the TE wave TE , the reflectance R of the TM wave TM and the retardation characteristics were calculated.

[0035] Examples of the design parameters of the reflective retardation structure 200 include the following. · The shape, dimensions, and material of the metal component 232 of the anisotropic structure layer 230 · The material of the metal reflective layer 210 · The thickness d of the dielectric protective layer 240 3

[0036] In the design example here, the shape of the metal component 232 is a wire grid. Therefore, the dimensions of the metal component 232 are such that the height d 2 , the line width Wl, and the groove width Ws are parameters.

[0037] · The height d of the metal component 232 2 FIG. 4 is a diagram showing the dependence (simulation result) of the optical characteristics of the reflective retardation structure 200 according to the embodiment on the height d 2 of the metal component 232. The material of the dielectric spacer layer 220 is SiO 2 , the material of the dielectric filling member 234 is SiO 2 , the material of the dielectric protective layer 240 is SiO 2 , and the materials of the metal component 232 and the metal reflective layer 210 are Al.

[0038] In the simulation, with the width Wl of the metal component 232 being 65 nm, the space Ws being 115 nm, and the thickness d 3 of the dielectric protective layer 240 being 60 nm, the height d 2 of the metal component 232 was changed as a parameter. The simulation was performed for light with an incident angle of 0°, and the polarization component along the grid is defined as S polarization, and the polarization perpendicular to it is defined as P polarization.

[0039] When the height d 2 of the metal component 232 is 90 nm, the reflectance RTE ,R TM Regarding the reflectance R and the phase difference characteristic φ, it can be seen that uniform characteristics are obtained over the wavelength band of 450 nm to 650 nm.

[0040] FIG. 5 is a diagram showing the dependency (simulation result) of the optical characteristics of the reflective phase difference structure 200R according to Comparative Technique 1 on the height d of the metal component 232. 2 The width Wl of the metal component 232 is 65 nm and the space Ws is 115 nm. Also, the thickness d of the dielectric spacer layer 220 is 50 nm and the thickness d of the dielectric protective layer 240 is 60 nm. 1 is 50 nm, and the thickness d of the dielectric protective layer 240 3 is set to 60 nm.

[0041] In Comparative Technique 1, when the height d of the metal component 232 2 is 30 nm, for the reflectance R TE ,R TM Regarding the reflectance R and the phase difference characteristic φ, it can be seen that uniform characteristics are obtained over the wavelength band of 450 nm to 650 nm.

[0042] · The thickness d of the dielectric protective layer 240 3 FIG. 6 is a diagram showing the dependency (simulation result) of the optical characteristics of the reflective phase difference structure 200 according to the embodiment on the thickness d of the dielectric protective layer 240. 3 The width Wl of the metal component 232 is 65 nm, the height d of the metal component 232 2 is 90 nm, and the thickness d of the dielectric protective layer 240 3 is changed as a parameter.

[0043] The thickness d of the dielectric protective layer 240 3 When is 60 nm, for the reflectance R TE ,R TM Regarding the reflectance R and the phase difference characteristic φ, it can be seen that uniform characteristics are obtained over the wavelength band of 450 nm to 650 nm.

[0044] FIG. 7 is a diagram showing the dependency of the optical characteristics of the reflective phase difference structure 200R according to Comparative Technique 1 on the thickness d of the dielectric protective layer 240. 3It is a diagram showing the dependency (simulation result). The width Wl of the metal component 232 is 65 nm, and the height d of the metal component 232 2 is 30 nm, and the thickness d of the dielectric spacer layer 220 1 is 50 nm, and the thickness d of the dielectric protective layer 240 3 was changed as a parameter.

[0045] In Comparative Technique 1, when the thickness d of the dielectric protective layer 240 3 is 60 nm, it can be seen that uniform characteristics are obtained over the wavelength band of 450 nm to 650 nm with respect to the reflectance R TE , R TM and the phase difference characteristic φ.

[0046] · The line width Wl of the metal component 232 FIG. 8 is a diagram showing the dependency (simulation result) of the optical characteristics of the reflection type phase difference structure 200 according to the embodiment on the width Wl of the metal component 232. Here, the duty cycle, which is the line width Ws with respect to the groove period (Wl + Ws), is changed. The height d of the metal component 232 2 is 90 nm, and the thickness d of the dielectric protective layer 240 3 is 60 nm, and the duty cycle (that is, the width Wl of the metal component 232) was changed as a parameter.

[0047] When the duty cycle is 35%, it can be seen that uniform characteristics are obtained over the wavelength band of 450 nm to 650 nm with respect to the reflectance R TE , R TM and the phase difference characteristic φ.

[0048] FIG. 9 is a diagram showing the dependency (simulation result) of the optical characteristics of the reflection type phase difference structure 200R according to Comparative Technique 1 on the width Wl of the metal component 232. The height d of the metal component 232 2 is 30 nm, the thickness d of the dielectric spacer layer 220 1 is 50 nm, and the thickness d of the dielectric protective layer 240 3 is 60 nm, and the duty cycle was changed as a parameter.

[0049] In Comparative Technique 1, when the duty cycle is 35%, the reflectance R TE ,R TM and the retardation characteristic φ, it can be seen that uniform characteristics are obtained over the wavelength band of 450 nm to 650 nm.

[0050] FIG. 10 is a diagram showing the wavelength dependence of the optical characteristics of the reflective retardation structure according to the embodiment and Comparative Technique 1. The upper part shows the characteristics of the reflective retardation structure 200 according to the embodiment, and the lower part shows the characteristics of the reflective retardation structure 200R according to Comparative Technique 1. The horizontal axis represents the wavelength, the left vertical axis represents the reflectance, and the right vertical axis represents the retardation. The design parameters of the reflective retardation structure 200 according to the embodiment are as follows. d 2 = 90 nm d 3 = 60 nm Wl = 65 nm Ws = 115 nm Duty cycle = 36%

[0051] The design parameters of the reflective retardation structure 200R according to Comparative Technique 1 are as follows. d 1 = 50 nm d 2 = 30 nm d 3 = 60 nm Wl = 65 nm Ws = 115 nm Duty cycle = 36%

[0052] Focusing on the reflectance and comparing the embodiment with Comparative Technique 1, the difference between the reflectance of S-polarized light and the reflectance of P-polarized light is smaller in the embodiment. Also, focusing on the retardation and comparing the embodiment with Comparative Technique 1, the embodiment can obtain higher uniformity over the wavelength band of 450 nm to 650 nm.

[0053] In the reflective retardation structure 200 according to the embodiment, the dielectric filling member 234 plays an important role. Hereinafter, this point will be described by comparison with Comparative Technique 2.

[0054] FIG. 11 is a cross-sectional view of the reflective retardation structure 200S according to Comparative Technique 2. The reflective retardation structure 200S is obtained by omitting the dielectric protective layer 240 and the dielectric filling member 234 from the reflective retardation structure 200 according to the embodiment.

[0055] The results of simulating the optical characteristics of the reflective retardation structure 200S according to Comparative Technique 2 will be described while comparing with the embodiment.

[0056] · Height d of the metal component 232 2 FIG. 12 is a diagram showing the dependence (simulation result) of the optical characteristics of the reflective retardation structure 200S according to Comparative Technique 2 on the height d of the metal component 232. In the simulation, the width Wl of the metal component 232 was fixed at 65 nm, and the height d of the metal component 232 2 was changed as a parameter. 2 As shown in FIG. 4, in the embodiment, by optimizing the height d of the metal component 232, uniform characteristics with respect to reflectance and retardation could be obtained over a wide wavelength band. On the other hand, in Comparative Technique 2, as shown by the simulation results in FIG. 12, a design parameter d that gives uniform optical characteristics over a wide wavelength band

[0057] could not be found. That is, it can be seen that the dielectric filling member 234 that fills the gap of the metal component 232 plays an important role. 2 2 2 2

[0058] · Line width Wl of the metal component 232 FIG. 13 is a diagram showing the dependence (simulation result) of the optical characteristics of the reflective retardation structure 200S according to the comparative technique 2 on the width Wl of the metal component 232. Here, the duty cycle, which is the line width Ws with respect to the groove period (Wl + Ws), is changed. The height d of the metal component 232 2 is 90 nm, and the duty cycle (i.e., the width Wl of the metal component 232) is changed as a parameter.

[0059] As shown in FIG. 8, in the embodiment, by optimizing the line width Wl of the metal component 232, uniform characteristics with respect to reflectance and retardation could be obtained over a wide wavelength band. On the other hand, in the comparative technique 2, as shown by the simulation results in FIG. 13, even if the width Wl of the metal component 232 is optimized, it is not possible to find a design parameter Wl that gives uniform optical characteristics over a wide wavelength band.

[0060] As can be seen from the comparison with the comparative technique 2, in the reflective retardation structure 200 according to the embodiment, it can be seen that good optical characteristics can be realized by filling the space of the metal component 232 with the dielectric filling member 234.

[0061] · Material Subsequently, the results of examining the materials of the metal component 232 and the metal reflective layer 210, which are metals, will be described.

[0062] FIG. 14 is a diagram showing the dependence (simulation result) of the optical characteristics of the reflective retardation structure 200 with the metal component 232 made of Al and the metal reflective layer 210 made of an APC (Ag - Pd - Cu) alloy on the height d of the metal component 232 2 is shown.

[0063] FIG. 15 is a diagram showing the dependence (simulation result) of the optical characteristics of the reflective retardation structure 200 with the metal component 232 and the metal reflective layer 210 made of an APC (Ag - Pd - Cu) alloy on the height d of the metal component 232 2 is shown.

[0064] As can be seen from the comparison between FIG. 14 and FIG. 4, even if the material of the metal reflective layer 210 is changed from Al to an APC alloy, the uniformity of the optical properties is maintained in a sufficiently wide wavelength band, and it can be seen that the influence of the material of the metal reflective layer 210 on the optical properties is not so great.

[0065] On the other hand, as can be seen from the comparison between FIG. 15 and FIG. 4, when the material of the metal component 232 is changed to a material other than Al, the uniformity of the optical properties is lost. From this, the material of the metal component 232 is preferably an Al-based material.

[0066] Subsequently, a modified example of the reflective retardation structure 200 will be described.

[0067] (Modified Example 1) FIG. 16 is a cross-sectional view of a reflective retardation structure 200A according to Modified Example 1. The difference between the reflective retardation structure 200A and the reflective retardation structure 200 of FIG. 2 is that the dielectric protective layer 240 is omitted. This corresponds to d 3 = 0.

[0068] If the structure and size (height d 2 and line width Wl, space width Ws) of the metal component 232 are optimized, uniform optical properties can be realized in a certain wavelength band even without the dielectric protective layer 240.

[0069] (Modified Example 2) In the embodiment, the cross-section of the metal component 232 of the anisotropic structure layer 230 was rectangular, but it is not limited thereto. The cross-section of the metal component 232 may be triangular or trapezoidal.

[0070] Also, the anisotropic structure layer 230 may have a double patterning structure in which pairs of two wire grids adjacent in the x direction are repeatedly formed in the x direction.

[0071] Furthermore, the anisotropic structure layer 230 is not limited to a collection of wire grids.

[0072] (Modification Example 3) FIG. 17 is a perspective view of a reflective retardation structure 200F according to Modification Example 3. In this modification, the plurality of metal components 232F is a set of a plurality of blocks adjacent in the x-direction and the y-direction. A dielectric filling member 234 is filled between the plurality of metal components 232F. A dielectric protective layer 240 may be formed on the anisotropic structure layer 230F.

[0073] FIG. 18 is a plan view for explaining the design parameters of the anisotropic structure layer 230F according to Modification Example 3. The anisotropic structure layer 230F can be designed using the length Δx in the x-direction, the length Δy in the y-direction, and the space d in the x-direction x and the space d in the y-direction y as parameters. In order for the anisotropic structure layer 230F to be an anisotropic structure, at least one of Δx≠Δy and d x ≠d y needs to be satisfied.

[0074] (Manufacturing Method) FIG. 19 is a diagram for explaining the manufacturing process of the reflective retardation structure 200 of FIG. 2. In step S100, a metal reflective layer 210 is formed on a substrate 202 by vapor deposition or sputtering. As described above, as the material of the metal reflective layer 210, Ag, Al, etc. are suitable in the visible range, and when designing assuming near-infrared, Au, Cu, etc. can be used. When high reflectivity is not required, Cr, Ni, Fe, etc. may be used. Further, an aluminum (Al)-based metal layer 204 is formed on the metal reflective layer 210. Note that when the metal reflective layer 210 is made of the same Al-based material as the metal layer 204, the metal reflective layer 210 and the metal layer 204 can be integrally formed as one layer.

[0075] In step S102, a mask material 206 for dry etching is formed on the metal layer 204.

[0076] In the subsequent step S104, the mask material 206 is patterned by an exposure process to form a mask structure 208 having an opening corresponding to the anisotropic structure.

[0077] In the subsequent step S106, the metal layer 204 is patterned by dry etching, and the mask structure 208 is removed in step S106. Thereby, a plurality of metal components 232 are integrally formed on the metal reflective layer 210.

[0078] Subsequently, a dielectric layer 209 is formed on the metal layer 204. Among this dielectric layer 209, a lower part thereof is a dielectric filling member 234 that fills the gaps between the plurality of metal components 232, and an upper part thereof becomes a dielectric protective layer 240.

[0079] Generally, as methods for forming a dielectric film, a sputtering method, a chemical vapor deposition (CVD) method, a vapor deposition method, and an atomic layer deposition (ALD) method can be used. The same applies to the dielectric layer 209 in the present embodiment, and in step S110, any of these methods can be used.

[0080] Aluminum (Al), which is a metal, may be oxidized by oxygen plasma generated in the film forming process of the dielectric filling member 234 and the dielectric protective layer 240, which are oxide films. In this case, the phase difference imparting function in the anisotropic structure layer 230 is impaired, and the function as a phase difference structure body cannot be obtained.

[0081] In addition, if the gap portions between the metal components 232 are not filled and voids are generated, there is a problem that the refractive index changes steeply in the void portions and the phase characteristics deteriorate. Specifically, the phase difference that can be imparted becomes small, and there is a possibility that the broadband characteristics are impaired. These problems can occur, for example, when the sputtering method is adopted as the method for forming the dielectric film.

[0082] Therefore, when oxidation of Al or generation of voids becomes a problem, the dielectric layer 209 may be formed by ALD method. By using the ALD method, oxidation of Al by oxygen plasma can be prevented. Also, in the ALD method, since the dielectric filling member 234 is densely filled between the metal components 232, voids are less likely to occur. Thereby, a rapid change in refractive index due to voids is also suppressed.

[0083] Note that this description does not deny or exclude the formation of a dielectric film by sputtering method. Even if it is generally called sputtering method, good characteristics may be obtained depending on the apparatus used and the film formation conditions. Also, the reflective retardation structure 200 formed with a dielectric film by sputtering method may be sufficiently practical depending on the required specifications.

Explanation of reference numerals

[0084] 200 Reflective retardation structure 210 Metal reflective layer 220 Dielectric spacer layer 230 Anisotropic structure layer 232 Metal component 234 Dielectric filling member 240 Dielectric protective layer

Claims

1. A metal reflective layer; an anisotropic structure layer including a plurality of metal components made of an aluminum-based metal and a dielectric filler member filling gaps between the plurality of metal components; A reflective phase difference structure comprising:

2. 2. The reflective phase difference structure according to claim 1, further comprising a dielectric protection layer formed on the anisotropic structure layer.

3. 3. The reflective phase difference structure according to claim 2, wherein the dielectric filling member and the dielectric protection layer are made of the same material.

4. A method for producing a reflective retardation structure according to any one of claims 1 to 3, comprising the steps of: A manufacturing method comprising the step of forming the dielectric filling member by atomic layer deposition.

5. forming a metal layer; forming an anisotropic structure layer on the metal layer, the anisotropic structure layer including a plurality of metal components made of an aluminum-based metal; forming a dielectric filler member by atomic layer deposition that fills gaps between the plurality of metal components; A method for manufacturing a reflective phase difference structure, comprising:

6. The step of forming the anisotropic structure layer includes: forming a mask structure for dry etching on the metal layer by an exposure process; patterning the metal layer by dry etching using the mask structure; 6. The method for producing a reflective phase difference structure according to claim 5, further comprising:

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