Surface emitting laser device

Abstract

To suppress an internal stress.SOLUTION: A light emitting unit 51 includes a light production layer 30, a first conductivity-type first light reflective layer 40, a second conductivity-type second light reflective layer 60, and a current constriction layer 53. The first light reflective layer 40 includes a plurality of first reflective layers 41 and a plurality of second reflective layers 42 which are made of a material containing Al and alternately arranged in a Z-axis direction. An Al composition ratio of the first reflective layer 41 is higher than an Al composition ratio of the second reflective layer 42. A second region 442 including the first reflective layer 41 and the second reflective layer 42 is provided at a position overlapping with a passing layer 531. The first light reflective layer 40 includes a side surface 512 which is an end surface in a direction perpendicular to the Z-axis direction, and a first region 441 provided on the side surface 512 and containing Al and Zn, and having an Al composition ratio lower than that of the first reflective layer 41.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a surface emitting laser device. [Background technology]

[0002] Patent Document 1 discloses a surface-emitting laser device. This surface-emitting laser device includes a substrate made of a compound semiconductor material, and an n-type semiconductor layer, an active layer, and a p-type semiconductor layer stacked on the substrate. The n-type semiconductor layer includes an n-type light reflecting layer, and the p-type semiconductor layer includes a p-type light reflecting layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-21879 A

[0004] [overview] However, in a surface-emitting laser device, internal stress may affect the characteristics of the surface-emitting laser device, and therefore there is a need to suppress the internal stress.

[0005] A surface-emitting laser device according to one aspect of the present disclosure includes a semiconductor substrate including a first substrate surface facing in a thickness direction and a second substrate surface facing an opposite side to the first substrate surface, a light-emitting portion provided on the first substrate surface and including a light-emitting portion surface facing the same direction as the first substrate surface, a first insulating film covering the light-emitting portion surface and including a first opening exposing a part of the light-emitting portion surface, and a first electrode covering the first opening of the first insulating film and in contact with the light-emitting portion surface, wherein the light-emitting portion includes a second light-reflecting layer of a second conductivity type provided on the first substrate surface, a light-generating layer provided on the opposite side of the second light-reflecting layer to the semiconductor substrate, a first light-reflecting layer of a first conductivity type provided on the opposite side of the light-generating layer to the second light-reflecting layer, and and a current confinement layer provided in a first light reflective layer, the current confinement layer including a passing layer through which a current for the light generation layer passes, and an oxide layer formed to surround the passing layer, the first light reflective layer being made of a material containing Al and including a plurality of first reflective layers and a plurality of second reflective layers arranged alternately in the thickness direction, the Al composition ratio of the first reflective layers being higher than the Al composition ratio of the second reflective layers, a second region including the first reflective layers and the second reflective layers being provided at a position overlapping the passing layer, the first light reflective layer including a side which is an end face in a direction perpendicular to the thickness direction, and a first region provided on the side, which includes Al and Zn and has an Al composition ratio lower than that of the first reflective layer. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic plan view of a surface emitting laser device according to one embodiment. [Diagram 2] FIG. 2 is a cross-sectional view of the surface emitting laser device taken along the line F2-F2 in FIG. [Diagram 3] FIG. 3 is a schematic cross-sectional view showing an enlarged portion of the surface-emitting laser device of FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view showing the layer configuration of the first light reflecting layer and the second light reflecting layer. [Diagram 5] FIG. 5 is an explanatory diagram illustrating the reflective layer in the light reflective layer. [Figure 6]FIG. 6 is an explanatory diagram illustrating the reflective layer in the light reflective layer. [Figure 7] FIG. 7 is a schematic plan view of a light emitting device equipped with the surface emitting laser device of FIG. [Figure 8] FIG. 8 is a cross-sectional view of the light emitting device taken along line F8-F8 in FIG. [Figure 9] FIG. 9 is a schematic cross-sectional view showing a surface-emitting laser device of a comparative example. [Figure 10] FIG. 10 is a schematic cross-sectional view showing a surface-emitting laser device according to a modified example. [Figure 11] FIG. 11 is a schematic cross-sectional view showing a surface-emitting laser device according to a modified example. [Figure 12] FIG. 12 is a schematic cross-sectional view showing a surface-emitting laser device according to a modified example. [Figure 13] FIG. 13 is a schematic cross-sectional view showing a surface-emitting laser device according to a modified example. [Figure 14] FIG. 14 is a schematic cross-sectional view showing a surface-emitting laser device according to a modified example. [Figure 15] FIG. 15 is a schematic plan view showing a surface emitting laser device according to a modified example. [Figure 16] FIG. 16 is a cross-sectional view of the surface-emitting laser device taken along the line F16-F16 in FIG. [Figure 17] FIG. 17 is a schematic plan view showing a surface emitting laser device according to a modified example.

[0007] [Detailed Description] Hereinafter, some embodiments of the surface-emitting laser device of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings are merely illustrative of embodiments of the present disclosure and should not be considered as limiting the present disclosure. Terms such as "first", "second", and "third" in the present disclosure are used merely to distinguish objects and do not rank the objects.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The term "at least one" as used herein means "one or more" of the desired options. As an example, the term "at least one" as used herein means "only one option" or "both of two options" if the number of options is two. As another example, the term "at least one" as used herein means "only one option" or "any combination of two or more options" if the number of options is three or more.

[0010] (One embodiment) (Schematic configuration of a surface emitting laser device) Fig. 1 is a schematic plan view of a surface-emitting laser device according to an embodiment. Fig. 2 is a cross-sectional view of the surface-emitting laser device taken along line F2-F2 in Fig. 1. Fig. 3 is a schematic cross-sectional view showing an enlarged view of an area including a light-emitting section as a part of the surface-emitting laser device in Fig. 3. Fig. 4 is a schematic cross-sectional view showing the layer configuration of a first light reflecting layer and a second light reflecting layer.

[0011] The surface-emitting laser device 10 shown in FIG. 1 is a semiconductor laser device called a VCSEL (Vertical Cavity Surface Emitting Laser). The surface-emitting laser device 10 is roughly rectangular parallelepiped-shaped. In one example, the surface-emitting laser device 10 is rectangular flat-plate-shaped. The surface-emitting laser device 10 includes a first main surface 11, a second main surface 12, and a plurality of side surfaces 13, 14, 15, and 16. The first main surface 11 and the second main surface 12 face in opposite directions. In the present disclosure, the direction in which the first main surface 11 faces is defined as the thickness direction. The thickness direction of the surface-emitting laser device 10 is defined as the Z-axis direction. Two axial directions that are perpendicular to the Z-axis direction and perpendicular to each other are defined as the X-axis direction and the Y-axis direction. The term "planar view" used in the present disclosure refers to viewing an object from the thickness direction, that is, viewing from the Z-axis direction. In one example, the surface-emitting laser device 10 is rectangular-shaped in which the length in the Y-axis direction is shorter than the length in the X-axis direction in a plan view. The shape of the surface-emitting laser device 10 in a plan view can be changed arbitrarily. The side surfaces 13 and 14 face in opposite directions in the X-axis direction. The side surfaces 15 and 16 face in opposite directions to each other in the Y-axis direction.

[0012] As shown in FIG. 2, the surface-emitting laser device 10 includes a semiconductor substrate 21 and a semiconductor layer 22. In one example, the semiconductor substrate 21 includes a compound semiconductor material. The semiconductor substrate 21 includes, for example, a single crystal of a compound semiconductor material that forms a tetragonal crystal. The compound semiconductor material may be a III-V group semiconductor material. The semiconductor substrate 21 may be a GaAs single crystal substrate. The semiconductor substrate 21 may be a substrate made of material other than GaAs. The semiconductor substrate 21 may or may not include an impurity. The semiconductor substrate 21 may include an impurity of a first conductivity type, or an impurity of a second conductivity type different from the first conductivity type. In one example, the first conductivity type is an n-type, and the second conductivity type is a p-type. In one example, the semiconductor substrate 21 includes an impurity of the first conductivity type. The n-type impurity may be, for example, Si (silicon). The semiconductor substrate 21 includes a first substrate surface 211 and a second substrate surface 212 that face opposite to each other in the Z-axis direction. In one example, the second substrate surface 212 constitutes the second main surface 12. The semiconductor substrate 21 includes a plurality of substrate side surfaces 213, 214, 215, and 216. The substrate side surfaces 213 to 216 face either the X-axis direction or the Y-axis direction. The substrate side surfaces 213 to 216 form part of the side surfaces 13 to 16 of the surface-emitting laser device 10.

[0013] The semiconductor layer 22 is formed on the first substrate surface 211 of the semiconductor substrate 21. The semiconductor layer 22 includes a first surface 221 and a second surface 222. The first surface 221 and the second surface 222 face in opposite directions in the Z-axis direction. The first surface 221 of the semiconductor layer 22 faces the same direction as the first substrate surface 211 of the semiconductor substrate 21. The second surface 222 of the semiconductor layer 22 faces the first substrate surface 211 of the semiconductor substrate 21. The second surface 222 of the semiconductor layer 22 contacts the first substrate surface 211 of the semiconductor substrate 21. In one example, the first surface 221 of the semiconductor layer 22 constitutes the first main surface 11. The semiconductor layer 22 includes a plurality of side surfaces 223, 224, 225, and 226. The side surfaces 223 to 226 of the semiconductor layer 22 face either the X-axis direction or the Y-axis direction. The side surfaces 223 to 226 of the semiconductor layer 22 form part of the side surfaces 13 to 16 of the surface-emitting laser device 10.

[0014] The semiconductor layer 22 includes a light generating layer 30, a first light reflecting layer 40, and a second light reflecting layer 60. The first light reflecting layer 40 and the second light reflecting layer 60 are arranged to sandwich the light generating layer 30 in the Z-axis direction. In one example, the first light reflecting layer 40 is arranged on the opposite side of the semiconductor substrate 21 with respect to the light generating layer 30. In one example, the second light reflecting layer 60 is arranged on the side of the semiconductor substrate 21 with respect to the light generating layer 30. In one example, the second light reflecting layer 60, the light generating layer 30, and the first light reflecting layer 40 are stacked in this order on the first substrate surface 211 of the semiconductor substrate 21. The semiconductor layer 22 may include an intermediate layer in contact with the first substrate surface 211 of the semiconductor substrate 21. The intermediate layer may include, for example, a buffer layer.

[0015] (Photogenerating Layer) The light generating layer 30 includes an active layer 31. The active layer 31 is disposed between the first light reflecting layer 40 and the second light reflecting layer 60 in the Z-axis direction. The active layer 31 is a light emitting layer that emits light when a current is supplied thereto. In one example, the active layer 31 may have a QW (Quantum Well) structure including a quantum well layer and a barrier layer. The active layer 31 may have an MQW (Multi Quantum Well) structure in which quantum well layers and barrier layers are alternately stacked at any period. The quantum well layer may include GaAs (Gallium Arsenide), AlGaAs (Aluminum Gallium Arsenide), or InGaAs (Indium Gallium Arsenide). The quantum well layer may be undoped. The barrier layer may have a band gap larger than the band gap of the quantum well layer.

[0016] Light generating layer 30 may include a first cladding layer 32 and a second cladding layer 33. First cladding layer 32 and second cladding layer 33 are arranged to sandwich active layer 31. First cladding layer 32 is arranged on the first light reflecting layer 40 side with respect to active layer 31. First cladding layer 32 may contain an impurity of a first conductivity type. The first conductivity type may be, for example, n-type. The n-type impurity may be, for example, Si. Second cladding layer 33 is arranged on the second light reflecting layer 60 side with respect to active layer 31. Second cladding layer 33 may contain an impurity of a second conductivity type. Second cladding layer 33 may contain, for example, C (carbon) as a p-type impurity.

[0017] The first cladding layer 32 and the second cladding layer 33 may include Al (aluminum). In one example, the first cladding layer 32 and the second cladding layer 33 include AlGaAs. The first cladding layer 32 is an AlGaAs layer having an Al composition ratio α1. α1 Ga (1-α1) The second cladding layer 33 contains As. The Al composition ratio α1 may be 0.2 or more and 0.7 or less. α2 Ga (1-α2) It contains As. The Al composition ratio α2 may be equal to or greater than 0.2 and equal to or less than 0.7. The Al composition ratios of the first cladding layer 32 and the second cladding layer 33 may be the same as or different from each other.

[0018] (First light reflecting layer and second light reflecting layer) The first light reflecting layer 40 is composed of a DBR layer (Distributed Bragg Reflector). The first light reflecting layer 40 may contain impurities of a first conductivity type. The first conductivity type may be, for example, n-type. The n-type impurities may be, for example, Si. The first light reflecting layer 40 has a refractive index that changes periodically along the Z-axis direction, and resonantly reflects a specific wavelength component. It can be said that the first light reflecting layer 40 has a reflectance that reflects a specific wavelength component.

[0019] The second light reflecting layer 60 is composed of a DBR layer. The second light reflecting layer 60 may contain p-type impurities, which are the second conductive type. The second conductive type impurities may be, for example, C. The second light reflecting layer 60 has a refractive index that changes periodically along the Z-axis direction, and resonantly reflects a specific wavelength component. It can be said that the second light reflecting layer 60 has a reflectance that reflects a specific wavelength component. The reflectance of the first light reflecting layer 40 and the reflectance of the second light reflecting layer 60 may be different from each other. In one example, the reflectance of the first light reflecting layer 40 is higher than the reflectance of the second light reflecting layer 60.

[0020] (Removal section) The surface-emitting laser device 10 includes a removed portion 52. The removed portion 52 is provided on the first main surface 11. The removed portion 52 may also be referred to as a "trench" or "separation groove." The removed portion 52 is formed by selectively removing the semiconductor layer 22. The removed portion 52 is formed by selectively removing the semiconductor layer 22 from a first surface 221 of the semiconductor layer 22 constituting the first main surface 11 toward a second surface 222 of the semiconductor layer 22.

[0021] Removal portion 52 penetrates first light reflecting layer 40 and light generating layer 30, and reaches second light reflecting layer 60. Removal portion 52 is formed inwardly from the periphery (side surfaces 223-226) of semiconductor layer 22 with a gap therebetween in a plan view, and is formed in an annular shape surrounding the inner portion of semiconductor layer 22.

[0022] Removal portion 52 includes inner wall surface 521, outer wall surface 522, and bottom surface 523 connecting inner wall surface 521 and outer wall surface 522. Inner wall surface 521 is, for example, circular in plan view. Inner wall surface 521 may be polygonal, elliptical, or the like in plan view. Inner wall surface 521 exposes first light reflecting layer 40 and light generating layer 30. In addition, inner wall surface 521 exposes a portion of second light reflecting layer 60.

[0023] In one example, outer wall surface 522 has a quadrangular shape along the periphery (side surfaces 223-236) of semiconductor layer 22 in a plan view. The planar shape of outer wall surface 522 is arbitrary and does not necessarily have to match the planar shape of the periphery of semiconductor layer 22. Outer wall surface 522 may have a circular shape along inner wall surface 521. In addition, outer wall surface 522 may have a polygonal shape, an elliptical shape, or the like in a plan view. Outer wall surface 522 exposes first light reflecting layer 40 and light generating layer 30. In addition, outer wall surface 522 exposes a portion of second light reflecting layer 60.

[0024] The bottom surface 523 faces the same direction as the first main surface 11 of the surface-emitting laser device 10. The bottom surface 523 exposes a part of the second light reflecting layer 60. The second light reflecting layer 60 includes a first surface 601 exposed by the bottom surface 523 of the removed portion 52. The first surface 601 of the second light reflecting layer 60 faces the same direction as the first surface 221 of the semiconductor layer 22. The first surface 601 of the second light reflecting layer 60 faces the same direction as the first substrate surface 211 of the semiconductor substrate 21. The first surface 601 of the second light reflecting layer 60 faces the same direction as the light emitting portion surface 511 of the light emitting portion 51.

[0025] (Light emitting part) The surface-emitting laser device 10 includes at least one light-emitting section 51 partitioned by a removed section 52. In one example, the surface-emitting laser device 10 includes one light-emitting section 51. The light-emitting section 51 is formed in the semiconductor layer 22 by the removed section 52. The light-emitting section 51 may be partitioned by the removed section 52 into a plateau shape (mesa shape). In one example, the light-emitting section 51 is formed into a circular shape in a planar view. The shape of the light-emitting section 51 in a planar view can be any shape, such as a polygonal shape or an elliptical shape. In one example, the light-emitting section 51 is a truncated cone shape. The light-emitting section 51 can be any shape, such as a polygonal truncated cone shape or an elliptical truncated cone shape. The light-emitting section 51 does not necessarily have to be a truncated cone shape, and may be a columnar shape along the Z-axis direction.

[0026] 2 and 3, the light-emitting section 51 includes a light-emitting section surface 511 and a light-emitting section side surface 512. The light-emitting section surface 511 faces the Z-axis direction. The light-emitting section surface 511 constitutes a part of the first surface 221 of the semiconductor layer 22. The light-emitting section side surface 512 faces a direction intersecting with the Z-axis direction. The light-emitting section side surface 512 can be said to be an end surface of the light-emitting section 51 in a direction intersecting with the Z-axis direction.

[0027] Light-emitting section 51 includes first light reflecting layer 40, light generating layer 30, and second light reflecting layer 60. Light-emitting section 51 generates laser light by resonating and reflecting light generated in light generating layer 30 at first light reflecting layer 40 and second light reflecting layer 60. The laser light is emitted toward semiconductor substrate 21.

[0028] 1, in one example, the light emitting section 51 is provided at a position shifted from the center of the semiconductor layer 22 in a planar view. In one example, the light emitting section 51 is provided closer to the side surface 223 of the semiconductor layer 22 with respect to the center of the semiconductor layer 22 in the X-axis direction. The light emitting section 51 may be provided closer to the side surface 224 of the semiconductor layer 22 with respect to the center of the semiconductor layer 22 in the X-axis direction. In one example, the light emitting section 51 is provided at the center of the semiconductor layer 22 in the Y-axis direction. The light emitting section 51 may be provided closer to the side surface 225 of the semiconductor layer 22 or closer to the side surface 226 of the semiconductor layer 22 in the Y-axis direction.

[0029] (Frame section) Surface-emitting laser device 10 includes frame portion 54, which is partitioned into an area different from light-emitting portion 51 by removed portion 52 in semiconductor layer 22. Frame portion 54 is formed in a plateau shape, for example. Frame portion 54 is annular in shape surrounding light-emitting portion 51 in plan view. Frame portion 54 may be a quadrangular annular shape extending along the periphery of semiconductor layer 22 in plan view. Frame portion 54 includes first light reflecting layer 40, light generating layer 30, and second light reflecting layer 60. First light reflecting layer 40 and light generating layer 30 of frame portion 54 are separated from first light reflecting layer 40 and light generating layer 30 of light-emitting portion 51 by removed portion 52.

[0030] The frame portion 54 includes a frame surface 541 and a frame side surface 542. The frame surface 541 is formed in a quadrangular ring shape extending along the periphery of the semiconductor layer 22. The frame surface 541 constitutes a part of the first surface 221 of the semiconductor layer 22. The frame side surface 542 is formed in a quadrangular ring shape extending along the periphery of the semiconductor layer 22. The frame side surface 542 is constituted by an outer wall surface 522 of the removal portion 52.

[0031] (Current confinement layer) 2, the surface-emitting laser device 10 includes a current confinement layer 53. The current confinement layer 53 is included in the light-emitting section 51. The current confinement layer 53 may be disposed between the light-emitting section surface 511 and the second light reflecting layer 60. The current confinement layer 53 may be disposed between the light-emitting section surface 511 and the light generating layer 30. In one example, the current confinement layer 53 is disposed in the first light reflecting layer 40. The current confinement layer 53 may be disposed between the first light reflecting layer 40 and the light generating layer 30.

[0032] The current confinement layer 53 includes a passing layer 531 and an oxide layer 532. The passing layer 531 is configured to allow a current to pass therethrough. The passing layer 531 is made of a material containing Al. In one example, the passing layer 531 is made of an Al layer having an Al composition ratio γ. γ Ga (1-γ) The Al composition ratio γ may be 0.95 or more and 1.00 or less.

[0033] The passage layer 531 is provided in an inner region of the light-emitting section 51. In one example, the passage layer 531 is disposed at the center of the light-emitting section 51 in a planar view. In one example, the passage layer 531 has a circular shape in a planar view. The diameter of the passage layer 531 may be 5 μm or more and 30 μm or less. The diameter of the passage layer 531 may be changed arbitrarily. The shape of the passage layer 531 may be any shape, such as a polygonal shape, an elliptical shape, or the like.

[0034] The oxide layer 532 is formed in an outer region of the passage layer 531. The oxide layer 532 may be formed to surround the passage layer 531. In a plan view, the oxide layer 532 has an annular shape surrounding the passage layer 531. In one example, in a plan view, the oxide layer 532 has an annular shape surrounding the passage layer 531.

[0035] In one example, the oxide layer 532 includes an oxide containing Al. The oxide containing Al is, for example, Al 2 O 3 (alumina). The oxide layer 532 may contain Ga or As. The oxide layer 532 is disposed on the light-emitting section side surface 512 side of each light-emitting section 51 with respect to the passing layer 531. For example, the oxide layer 532 is made of Al γ Ga (1-γ) The oxide layer 532 is formed by oxidizing the periphery of a layer containing As. In one example, the oxide layer 532 can be formed by performing a heat treatment in water vapor. The oxide layer 532 has insulating properties. Therefore, the current flowing through the light emitting section 51 in the Z-axis direction passes through the passing layer 531 surrounded by the oxide layer 532. It can be said that the current confinement layer 53 is configured to constrict the current path of the light emitting section 51 in the Z-axis direction.

[0036] (insulating film) 1 and 2, the surface-emitting laser device 10 may include an insulating film 73 that covers the semiconductor layer 22. The insulating film 73 may be, for example, SiO 2 , silicon oxide such as SiO, SiN (silicon nitride), SiON, ZrO 2 (zirconium oxide) or TiO (titanium oxide). In one example, the insulating film 73 has a single layer structure containing SiN. The insulating film 73 may have a multi-layer structure.

[0037] The insulating film 73 includes a first insulating film 74 that covers the light emitting portion 51. The first insulating film 74 covers the light emitting portion surface 511 and the light emitting portion side surface 512 of the light emitting portion 51. The first insulating film 74 includes a first opening 741 that exposes a part of the light emitting portion surface 511 of the light emitting portion 51. The first opening 741 of the first insulating film 74 is formed so as to surround the passing layer 531 in a planar view. In one example, the first opening 741 is formed in a circular shape in a planar view. The first opening 741 may have any shape such as a polygonal shape or an elliptical shape. The first opening 741 overlaps with the passing layer 531 of the current confinement layer 53 in a planar view. The center of the first opening 741 may coincide with the center O1 of the light emitting portion 51. In one example, the first opening 741 is larger than the passing layer 531. The first opening 741 may be the same size as the passing layer 531. Additionally, the first opening 741 may be smaller than the passage layer 531 .

[0038] The insulating film 73 includes a second insulating film 75 that covers an area of ​​the semiconductor layer 22 outside the light emitting section 51. The second insulating film 75 is connected to the first insulating film 74 at the lower end of the light emitting section side surface 512 of the light emitting section 51, and covers the removed section 52 and the frame section 54. In detail, the second insulating film 75 covers the bottom surface 523 of the removed section 52, and the frame surface 541 and frame side surface 542 of the frame section 54. The second insulating film 75 preferably covers the entire bottom surface 523 of the removed section 52, and the entire frame side surface 542 of the frame section 54.

[0039] The second insulating film 75 includes a second opening 751 exposing a part of the second light reflecting layer 60 in a portion covering the bottom surface 523 of the removed portion 52. The second opening 751 is formed away from the light emitting portion 51 in a plan view. The second opening 751 is formed in a strip shape extending along the light emitting portion 51. The second opening 751 is formed so as to surround the light emitting portion 51 in a plan view. The second opening 751 may be formed in an open ring shape in a plan view.

[0040] The second insulating film 75 may be formed in a portion covering the frame surface 541 of the frame portion 54 with a gap therebetween inward from each of the side surfaces 223-226 of the semiconductor layer 22. It can be said that the second insulating film 75 is formed so as to expose the periphery of the semiconductor layer 22.

[0041] (1st electrode, 2nd electrode) The surface-emitting laser device 10 includes a first electrode 71 and a second electrode 72. The first electrode 71 and the second electrode 72 are formed on an insulating film 73. The first electrode 71 is electrically connected to a first light reflecting layer 40 of the semiconductor layer 22. The second electrode 72 is electrically connected to a second light reflecting layer 60 of the semiconductor layer 22.

[0042] The first electrode 71 may include a plurality of electrode films. The first electrode 71 may be composed of a single electrode film. The first electrode 71 may include, for example, Au (gold), Ti (titanium), or Pt (platinum). In one example, the first electrode 71 is composed of a Ti layer, a Pt layer, and an Au layer stacked together.

[0043] The first electrode 71 includes, in one example, a first pad portion 711, a first wiring portion 712, and a first connection portion 713. The first pad portion 711 is disposed on a frame surface 541 of the frame portion 54 in a planar view. In one example, the first pad portion 711 is disposed on an end portion on the side surface 223 side of the semiconductor layer 22 in a planar view.

[0044] The first pad portion 711 is positioned on the same straight line as the light emitting portion 51 and the second pad portion 721. The first pad portion 711 is formed in a strip shape (rectangular shape) extending in the Y-axis direction. The first pad portion 711 may have a length in the Y-axis direction that exceeds the width of the light emitting portion 51. The length of the first pad portion 711 may be approximately equal to the length of the second pad portion 721.

[0045] The first wiring portion 712 is provided in the removed portion 52. The first wiring portion 712 is formed in a strip shape extending from the first pad portion 711 toward the light emitting portion 51. The first wiring portion 712 extends linearly in a region between the first pad portion 711 and the light emitting portion surface 511 of the light emitting portion 51. In one example, the first wiring portion 712 is formed in a linear strip shape extending in the X-axis direction from the first pad portion 711 toward the light emitting portion surface 511 of the light emitting portion 51. In one example, the first wiring portion 712 is formed on the same straight line as the second wiring portion 722 in a plan view. The first wiring portion 712 has a first wiring width W1. The first wiring width W1 is the width of the first wiring portion 712 in a direction (Y-axis direction) perpendicular to the direction in which the first wiring portion 712 extends (X-axis direction).

[0046] The first connection portion 713 is provided on the light-emitting portion surface 511 of the light-emitting portion 51. In one example, the first connection portion 713 is formed in a circular shape in a plan view. The first connection portion 713 covers the first opening 741 of the insulating film 73. The first connection portion 713 penetrates into the first opening 741 of the first insulating film 74 of the insulating film 73. The first connection portion 713 is electrically connected to the first light reflecting layer 40 within the first opening 741.

[0047] The first connection portion 713 includes a first contact portion 714 that contacts the light emitting portion surface 511 in the first opening 741 of the first insulating film 74, and a portion that covers the first insulating film 74. In one example, the first contact portion 714 has a circular shape in a plan view. The first contact portion 714 is disposed at the center of the light emitting portion surface 511 of the light emitting portion 51. The first contact portion 714 overlaps with the passing layer 531 of the current confinement layer 53 in a plan view.

[0048] The second electrode 72 may include a plurality of electrode films. The second electrode 72 may be composed of a single electrode film. The second electrode 72 may include, for example, Au, Pt, or Ti. In one example, the second electrode 72 is composed of a Ti layer, a Pt layer, and an Au layer stacked together.

[0049] The second electrode 72 includes, in one example, a second pad portion 721, a second wiring portion 722, and a second connection portion 723. The second pad portion 721 is disposed on a frame surface 541 of the frame portion 54 in a planar view. The second pad portion 721 is disposed on an end portion of the semiconductor layer 22 on the side surface 224 side in a planar view in one example. The second pad portion 721 is formed in a strip shape (rectangular shape) extending in the Y-axis direction. The second pad portion 721 may have a length that exceeds the width of the light emitting portion 51 in the Y-axis direction.

[0050] The second wiring portion 722 is provided in the removed portion 52. The second wiring portion 722 extends linearly in the region between the second pad portion 721 and the light-emitting portion 51. In one example, the second wiring portion 722 is formed in a linear strip shape extending in the X-axis direction from the second pad portion 721 toward the light-emitting portion 51. The second wiring portion 722 has a second wiring width W2. The second wiring width W2 is the width of the second wiring portion 722 in a direction (Y-axis direction) perpendicular to the direction in which the second wiring portion 722 extends (X-axis direction). The second wiring width W2 of the second wiring portion 722 may be equal to or larger than the first wiring width W1 of the first wiring portion 712 (W2≧W1).

[0051] The second connection portion 723 is formed so as to surround the light-emitting portion 51. The second connection portion 723 covers the second opening 751 of the second insulating film 75 of the insulating film 73. The second connection portion 723 extends from the second wiring portion 722 into the second opening 751. The second connection portion 723 is electrically connected to the second light reflecting layer 60 in the second opening 751. The second connection portion 723 is formed at a distance from the light-emitting portion 51, and covers the entire area of ​​the second opening 751.

[0052] In one example, the second connection portion 723 is formed in a curved belt shape (C-shape) extending along the second opening 751 in a plan view. The second connection portion 723 includes a second contact portion 724 that contacts the second light reflecting layer 60 in the second opening 751 of the second insulating film 75, and a portion that covers the second insulating film 75.

[0053] The second connection portion 723 includes a pair of end portions 723A in a region outside the second opening 751 in plan view. It can be said that the second connection portion 723 is formed in an open ring shape. In one example, the pair of end portions 723A are formed at positions facing the second wiring portion 722 (second pad portion 721) across the light emitting portion 51 in plan view. In one example, the pair of end portions 723A are spaced apart from each other in the Y-axis direction. The pair of end portions 723A are disposed in the Y-axis direction with the first wiring portion 712 between them. Each of the pair of end portions 723A is spaced apart from the first wiring portion 712.

[0054] The surface-emitting laser device 10 may include a plurality of terminal electrodes 761, 762, and 763. The terminal electrodes 761 to 763 may be electrodes that are externally connected to a connection target. The first terminal electrode 761 is disposed on the first electrode 71. Specifically, the first terminal electrode 761 is disposed on the first pad portion 711. The first terminal electrode 761 may be formed in a strip shape (rectangular shape) extending along the first pad portion in a plan view.

[0055] The second terminal electrode 762 is disposed on the second electrode 72. Specifically, the second terminal electrode 762 is disposed on the second pad portion 721. The second terminal electrode 762 may be formed in a strip shape (rectangular shape) extending along the second pad portion in a plan view. The second terminal electrode 762 faces the first terminal electrode 761 across the light emitting portion 51 in a plan view. That is, the second terminal electrode 762 is aligned in the X-axis direction together with the light emitting portion 51 and the first terminal electrode 761.

[0056] The third terminal electrode 763 is disposed at a position different from the first terminal electrode 761 on the first electrode 71. Specifically, the third terminal electrode 763 is disposed on the first connection portion 713. The third terminal electrode 763 may be formed in a circular shape in a plan view. The third terminal electrode 763 may cover the entire area of ​​the first connection portion 713. The third terminal electrode 763 is located on the same straight line as the light emitting portion 51, the first terminal electrode 761, and the second terminal electrode 762 in a plan view. The third terminal electrode 763 is disposed at a position closer to the first terminal electrode 761 than the second terminal electrode 762 in a plan view. In other words, the third terminal electrode 763 is disposed so that the distance between the third terminal electrode 763 and the first terminal electrode 761 is less than the distance between the third terminal electrode 763 and the second terminal electrode 762.

[0057] The first to third terminal electrodes 761-763 may each have a thickness greater than the thickness of the first and second electrodes 71, 72. In one embodiment, the first to third terminal electrodes 761-763 may have the same thickness. The first to third terminal electrodes 761-763 may include a plurality of electrode films. The first to third terminal electrodes 761-763 may include a plurality of electrode films. The first to third terminal electrodes 761-763 may be formed of a material containing Au.

[0058] (Layer configuration of first light reflective layer and second light reflective layer) As shown in FIG. 4, the first light reflective layer 40 includes a plurality of first reflective layers 41 and a plurality of second reflective layers 42. The plurality of first light reflective layers 40 and the plurality of second reflective layers 42 are alternately arranged in the Z-axis direction. The first reflective layer 41 and the second reflective layer 42 are made of a material containing Al. In one example, the first reflective layer 41 and the second reflective layer 42 contain AlGaAs. The first reflective layer 41 and the second reflective layer 42 have different Al composition ratios from each other. The first reflective layer 41 is made of Al having an Al composition ratio β1. β1 Ga (1-β1) The first reflective layer 41 may have an Al composition ratio β1 of 0.70 or more and 0.97 or less. The second reflective layer 42 may have an Al composition ratio β2 of β2 Ga (1-β2)The second reflective layer 42 includes As. The Al composition ratio β2 of the second reflective layer 42 may be greater than 0 and equal to or less than 0.2. The refractive index of the reflective layer including AlGaAs decreases as the Al composition ratio increases. Therefore, the first reflective layer 41 and the second reflective layer 42 have different refractive indices.

[0059] The second light reflective layer 60 includes a plurality of third reflective layers 61 and a plurality of fourth reflective layers 62. The plurality of third reflective layers 61 and the plurality of fourth reflective layers 62 are alternately arranged in the Z-axis direction. The third reflective layer 61 and the fourth reflective layer 62 are made of a material containing Al. In one example, the first reflective layer 41 and the second reflective layer 42 contain AlGaAs. The third reflective layer 61 and the fourth reflective layer 62 have different Al composition ratios. The third reflective layer 61 is made of Al having an Al composition ratio β3. β3 Ga (1-β3) The third reflective layer 61 may have an Al composition ratio β3 of 0.70 or more and 0.97 or less. The fourth reflective layer 62 may have an Al composition ratio β4 of β4 Ga (1-β4) The fourth reflective layer 62 includes As. The Al composition ratio β4 of the fourth reflective layer 62 may be greater than 0 and equal to or less than 0.2. The refractive index of a reflective layer including AlGaAs decreases as the Al composition ratio increases. Therefore, the third reflective layer 61 and the fourth reflective layer 62 have mutually different refractive indices.

[0060] The thickness T11 of the first light reflecting layer 40 in the Z-axis direction may be larger than the thickness T12 of the second light reflecting layer 60. The thickness T11 of the first light reflecting layer 40 is set according to the reflectance of the first light reflecting layer 40. The thickness T11 of the first light reflecting layer 40 may be set by the number of layers, which is the number of repetitions of the first reflecting layer 41 and the second reflecting layer 42 included in the first light reflecting layer 40. The thickness T12 of the second light reflecting layer 60 is set according to the reflectance of the second light reflecting layer 60. The thickness T12 of the second light reflecting layer 60 may be set by the number of layers, which is the number of repetitions of the third reflecting layer 61 and the fourth reflecting layer 62 included in the second light reflecting layer 60. The number of layers of the first reflecting layer 41 (second reflecting layer 42) included in the first light reflecting layer 40 may be larger than the number of layers of the third reflecting layer 61 (fourth reflecting layer 62) included in the second light reflecting layer 60. The number of layers of the first reflective layer 41 may be 35 or more and 45 or less. The number of layers of the third reflective layer 61 (fourth reflective layer 62) may be 15 or more and 25 or less.

[0061] (1st area, 2nd area) 2 and 3, the surface-emitting laser device 10 includes a first region 441 and a second region 442. The first region 441 and the second region 442 are provided in the light-emitting section 51. The first region 441 and the second region 442 are provided in the first light reflecting layer 40. It can be said that the first light reflecting layer 40 includes the first region 441. It can also be said that the first light reflecting layer 40 includes the first region 441 and the second region 442.

[0062] The first region 441 is provided between the light emitting portion side surface 512 of the light emitting portion 51 and the passing layer 531 of the current confinement layer 53 in a planar view. It can be said that the first region 441 is provided at a position overlapping with the oxide layer surrounding the passing layer 531 of the current confinement layer 53 in a planar view.

[0063] The first insulating film 74 of the insulating film 73 includes a first opening 741 formed to surround the passing layer 531 of the current confinement layer 53. In one example, the first region 441 extends more inward than an end 741A of the first opening 741 of the insulating film 73 in a plan view. The inner end 441A of the first region 441 is located between the end 741A of the first opening 741 of the first insulating film 74 and the passing layer 531 of the current confinement layer 53.

[0064] The second region 442 is provided at the center of the light emitting section 51 in a plan view. The second region 442 is surrounded by the first region 441 in a plan view. It can be said that the first region 441 is provided so as to surround the second region 442 in a plan view. It can be said that the second region 442 is provided at a position overlapping the first opening 741 of the first insulating film 74 of the insulating film 73 in a plan view. It can be said that the second region 442 is provided at a position overlapping the passing layer 531 of the current confinement layer 53 in a plan view. The driving current supplied by the first electrode 71 is supplied to the active layer 31 of the light generating layer 30 through the passing layer 531 of the current confinement layer 53. Therefore, it can be said that the second region 442 is a region through which the driving current passes. The second region 442 includes a stacked structure of the first reflecting layer 41 and the second reflecting layer 42 of the first light reflecting layer 40. Light generated in light generating layer 30 is reflected by first reflective layer 41 and second reflective layer 42. Therefore, second region 442 can be said to be a region that reflects light.

[0065] The first region 441 is a region containing Al and Zn. In one example, the first region 441 is a diffusion region in which Zn is diffused in the first light reflecting layer 40 containing Al. On the other hand, the second region 442 is a region that does not substantially contain Zn. "Substantially not containing Zn" means that Zn is not intentionally contained in the target object.

[0066] The first light reflecting layer 40 contains Si as a first conductive type impurity. The first region 441 contains Zn. Therefore, the first region 441 formed in the first light reflecting layer 40 is a region containing Si and Zn. In one example, the concentration of Zn in the first region 441 is 1.0×10 20 cm -3 The following may be true. Zn is a p-type impurity and is also a carrier. Si is an n-type impurity and is also a carrier. The first light reflecting layer 40 is a semiconductor layer containing AlGaAs. The second region 442 contains Si as a first conductivity type impurity and does not contain Zn. It can be said that the carrier concentration of the first region 441 is different from the carrier concentration of the second region 442. It can be said that the carrier concentration of the first region 441 is lower than the carrier concentration of the second region 442.

[0067] The first region 441 is annular in plan view. The first region 441 is provided from the light-emitting portion side surface 512 of the light-emitting portion 51 toward the center of the light-emitting portion 51. In plan view, the center of the light-emitting portion 51 is also the center of the first opening 741 of the first insulating film 74. Therefore, it can be said that the first region 441 is provided from the light-emitting portion side surface 512 toward the center of the first opening 741 of the first insulating film 74 in plan view. The inner end 441A of the first region 441 is the boundary portion 81 between the first region 441 and the second region 442. In one example, the inner end 441A of the first region 441 may be formed along the Z-axis direction.

[0068] The first region 441 includes a plurality of first layers 461 and a plurality of second layers 462. The plurality of first layers 461 and the plurality of second layers 462 are alternately arranged in the Z-axis direction. The first layer 461 is disposed in a direction perpendicular to the Z-axis direction with respect to the first reflective layer 41. The first layer 461 is formed by adding Zn to the first reflective layer 41. The first layer 461 is formed in a ring shape surrounding the first reflective layer 41. The second layer 462 is disposed in a direction perpendicular to the Z-axis direction with respect to the second reflective layer 42. The second layer 462 is formed by adding Zn to the second reflective layer 42. The second layer 462 is formed in a ring shape surrounding the second reflective layer 42.

[0069] As shown in FIG. 2, the first region 441 may be included in the first light reflecting layer 40 of the frame portion 54. In FIG. 2, hatching for the first region 441 is omitted. The first region 441 of the frame portion 54 may be formed in a ring shape surrounding the light emitting portion 51 in a plan view. The first region 441 of the frame portion 54 is formed from the frame surface 541 to the frame side surface 542. The first region 441 of the frame portion 54 is a region containing Al and Zn, similar to the first region 441 of the light emitting portion 51. The first region 441 of the frame portion 54 may be omitted.

[0070] (Oxide layer of second light reflective layer) As shown in FIG. 3, in the light-emitting section 51, the second light reflecting layer 60 includes one or more third reflecting layers 61A disposed between the light generating layer 30 and the bottom surface 523 of the removal section 52. The third reflecting layer 61A is exposed from the light-emitting section side surface 512. The third reflecting layer 61A includes an oxide layer 611 exposed from the light-emitting section side surface 512. The oxide layer 611 may include an Al oxide. The third reflecting layer 61A is a semiconductor layer having a high Al composition ratio. The oxide layer 611 is formed by oxidation of the third reflecting layer 61A exposed from the light-emitting section side surface 512. The oxide layer 532 may also be included in the frame section 54.

[0071] (Al composition, impurity concentration) 4, the first light reflecting layer 40 is composed of a plurality of first reflecting layers 41 and a plurality of second reflecting layers 42 arranged alternately in the Z-axis direction. The first reflecting layers 41 and the second reflecting layers 42 are formed by, for example, a metal organic chemical vapor deposition (MOCVD) method.

[0072] The first light reflective layer 40 includes a first region 441 containing Zn and a second region 442 surrounded by the first region 441. The first layer 461 containing Zn has an Al composition ratio different from that of the first reflective layer 41 not containing Zn. Similarly, the second layer 462 containing Zn has an Al composition ratio different from that of the second reflective layer 42 not containing Zn.

[0073] 6 shows a part of the first light reflecting layer 40, the first reflecting layer 41 and the second reflecting layer 42 included in the second region 442. The first reflecting layer 41 and the second reflecting layer 42 have a configuration in which the Al composition ratio does not change in the Z-axis direction. The interface 822 between the first reflecting layer 41 and the second reflecting layer 42 is clear and distinct.

[0074] Fig. 5 shows a part of the first light reflecting layer 40, including a boundary portion 81 between the first region 441 and the second region 442. The density of the dot hatching in Fig. 5 indicates the magnitude of the Al composition ratio.

[0075] The first light reflective layer 40 includes a first region 441 and a second region 442. The first region 441 includes a first layer 461 and a second layer 462, and the second region 442 includes a first reflective layer 41 and a second reflective layer 42.

[0076] The first reflective layer 41 and the second reflective layer 42 in the second region 442 have a uniform Al composition ratio in the Z-axis direction. The interface 822 between the first reflective layer 41 and the second reflective layer 42 is clear and distinct. It can be said that the interface 822 exists between the first reflective layer 41 and the second reflective layer 42 in the second region 442 of the first light reflective layer 40.

[0077] The first layer 461 and the second layer 462 of the first region 441 contain Zn. The first region 441 has a different composition from the first reflective layer 41 and the second reflective layer 42 due to the diffused Zn. In the plurality of first layers 461 and the plurality of second layers 462, a phenomenon occurs in which the constituent atoms are mixed between the first layer 461 and the second layer 462 due to the diffused Zn. Due to this phenomenon, the Al composition ratio of the first layer 461 decreases, and the Al composition ratio of the second layer 462 increases. Therefore, the Al composition ratio of the first layer 461 becomes lower than the Al composition ratio of the first reflective layer 41. Moreover, the Al composition ratio of the second layer 462 becomes higher than the composition ratio of the second reflective layer 42. Therefore, it can be said that the Al composition ratio of the first region 441 is lower than the Al composition ratio of the first reflective layer 41. Moreover, it can be said that the Al composition ratio of the first region 441 is higher than the Al composition ratio of the second reflective layer 42.

[0078] The Al composition ratio of the first layer 461 may be higher than the Al composition ratio of the second layer 462. The Al composition ratio of the first layer 461 may be equal to the Al composition ratio of the second layer 462. Furthermore, the first layer 461 and the second layer 462 of the first region 441 may have a composition gradient. The composition gradient means that the Al composition ratio of the first layer 461 and the second layer 462 containing AlGaAs gradually increases or decreases in the Z-axis direction.

[0079] The first layer 461 included in the first region 441 has an Al composition ratio that gradually decreases toward the second layer 462 in the Z-axis direction. The second layer 462 included in the first region 441 has an Al composition ratio that gradually increases toward the first layer 461 in the Z-axis direction. For this reason, the interface 821 between the first layer 461 and the second layer 462 is blurred more than the interface 822 between the first reflective layer 41 and the second reflective layer 42. It can be said that the interface between the layers in the first region 441 is blurred more than the interface in the second region 442. It can be said that the interface 821 between the first layer 461 and the second layer 462 is unclear. In the first region 441, the first layer 461 and the second layer 462 adjacent to each other in the Z-axis direction are partially mixed together, and there are cases where the interface 821 does not exist in parts. It can be said that the interface 821 between the first layer 461 and the second layer 462 does not exist in some parts in the first region 441.

[0080] The Al composition ratio of the first layer 461 is lower than that of the first reflective layer 41. The Al composition ratio of the second layer 462 is higher than that of the second reflective layer 42. Therefore, the difference between the Al composition ratio of the first layer 461 and that of the second layer 462 is smaller than the difference between the Al composition ratio of the first reflective layer 41 and that of the second reflective layer 42. In addition, the first layer 461 and the second layer 462 having a composition gradient have a small difference in the Al composition ratio between the first layer 461 and the second layer 462. The composition gradient reduces the barrier in the first layer 461 and the second layer 462 when a voltage is applied. As a result, the electrical resistance of the first layer 461 and the second layer 462 in the first region 441 is lower than the electrical resistance of the first reflective layer 41 and the second reflective layer 42 in the second region 442 that does not have a composition gradient.

[0081] An interface 822 between the first reflective layer 41 and the second reflective layer 42 included in the second region 442 is clear. The refractive index of the first reflective layer 41 and the refractive index of the second reflective layer 42 are different from each other. On the other hand, an interface 821 between the first layer 461 and the second layer 462 included in the first region 441 is blurred more than an interface 822 between the first reflective layer 41 and the second reflective layer 42 included in the second region 442.

[0082] The first reflective layer 41 and the second reflective layer 42 in the second region 442 may have a composition gradient. The first reflective layer 41 and the second reflective layer 42 are formed by MOCVD. The composition gradient of the first reflective layer 41 and the second reflective layer 42 is obtained by adjusting the flow rate of the metalorganic gas when forming the first reflective layer 41 and the second reflective layer 42 by MOCVD. The second region 442 including the first reflective layer 41 and the second reflective layer 42 having a composition gradient has a low electric resistance. Even when the first reflective layer 41 and the second reflective layer 42 have a composition gradient, the Al composition ratio of the first layer 461 containing Zn is lower than the Al composition ratio of the first reflective layer 41, and the Al composition ratio of the second layer 462 is higher than the Al composition ratio of the second reflective layer 42. Therefore, the Al composition ratio of the first region 441 is lower than the Al composition ratio of the first reflective layer 41.

[0083] Second light reflecting layer 60 may or may not have a composition gradient. First cladding layer 32 and second cladding layer 33 of light generating layer 30 may or may not have a composition gradient. The composition gradients of second light reflecting layer 60, first cladding layer 32, and second cladding layer 33 are obtained in the same manner as the composition gradients of first light reflecting layer 40 and second light reflecting layer 60. For example, third reflecting layer 61 and fourth reflecting layer 62 of second light reflecting layer 60 are formed by MOCVD. The composition gradients of third reflecting layer 61 and fourth reflecting layer 62 are obtained by adjusting the flow rate of an organic metal gas when forming third reflecting layer 61 and fourth reflecting layer 62 by MOCVD.

[0084] (Light emitting device) Fig. 7 is a schematic plan view showing an example of a light-emitting device 100 equipped with the surface-emitting laser device 10 of Fig. 1. Fig. 8 is a cross-sectional view of the light-emitting device taken along line F8-F8 of Fig. 7. The window member 107 is omitted in Fig. 7. The XYZ axes shown in Fig. 7 and Fig. 8 are based on the axial indication of the surface-emitting laser device 10 shown in Fig. 1 and Fig. 2.

[0085] The light emitting device 100 includes a housing 101 in which the surface emitting laser device 10 is housed. In one example, the housing 101 has a rectangular parallelepiped shape. The housing 101 includes a base member 102, a frame member 103, and a conductive member 104.

[0086] In one example, the base member 102 may be a rectangular plate in a plan view. The base member 102 is made of an insulating material. The base member 102 includes an upper surface 102A and a lower surface 102B. A conductive member 104 is embedded in the base member 102. The conductive member 104 includes a first conductive portion 104A and a second conductive portion 104B. In one example, the first conductive portion 104A and the second conductive portion 104B are made of a material containing Cu. The base member 102 holds the first conductive portion 104A and the second conductive portion 104B so as to insulate the first conductive portion 104A and the second conductive portion 104B from each other. The first conductive portion 104A and the second conductive portion 104B are exposed to the upper surface 102A and the lower surface 102B of the base member 102.

[0087] The frame member 103 may be in a quadrangular ring shape in a plan view. The frame member 103 is attached to an upper surface 102A of the base member 102. The frame member 103 may be integral with the base member 102. The frame member 103 and the base member 102 form an accommodation space 105 that accommodates the surface-emitting laser device 10.

[0088] The surface-emitting laser device 10 is accommodated in the accommodation space 105 in a flip-chip position with the semiconductor substrate 21 facing the opening 103A of the frame member 103 and the light-emitting portion 51 facing the base member 102. The terminal electrodes 761 to 763 of the surface-emitting laser device 10 are electrically connected to the first conductive portion 104A and the second conductive portion 104B by a conductive bonding material 106. The conductive bonding material 106 may be a solder paste, an Ag paste, or the like.

[0089] The light emitting device 100 may include a window member 107. The window member 107 is attached to the frame member 103 so as to close the opening 103A. The window member 107 may be made of an organic insulator or an inorganic insulator. The window member 107 may be a diffusion plate that diffuses the laser light, or may be a transparent glass plate that transmits the laser light of the surface emitting laser device 10. The window member 107 may be omitted.

[0090] The light emitting device 100 may include a sealing member filled in the housing space 105. The sealing member seals the surface emitting laser device 10 in the internal space. The sealing member may be made of an organic insulator or a transparent organic insulator. The sealing member may be translucent. The sealing member may include a diffusing material that diffuses the laser light.

[0091] (Operation of the embodiment) The operation of the surface emitting laser device 10 of the embodiment will be described below. First, a surface-emitting laser device 10X of a first comparative example will be described. Note that, in the surface-emitting laser device 10X of the first comparative example, the same members as those in the surface-emitting laser device 10 described above will be described using the same reference numerals.

[0092] 9 shows a schematic cross section of a surface-emitting laser device 10X of a first comparative example. 9 shows a cross-sectional view corresponding to the schematic cross section of the surface-emitting laser device 10 of the embodiment shown in FIG. The surface-emitting laser device 10X of the first comparative example is different from the surface-emitting laser device 10 of the embodiment in the configuration of the first light reflecting layer 40X. The first light reflecting layer 40X of the first comparative example does not contain Zn, that is, does not contain the first region 441 shown in FIGS.

[0093] In the surface-emitting laser device 10X of the first comparative example, the first light reflective layer 40X includes a plurality of first reflective layers 41. The plurality of first reflective layers 41 are exposed to the light-emitting section side surface 512 of the light-emitting section 51. The plurality of first reflective layers 41 each include an oxide layer 411 exposed to the light-emitting section side surface 512 of the light-emitting section 51. The oxide layer 411 is formed by oxidizing the first reflective layer 41 exposed from the light-emitting section side surface 512 of the light-emitting section 51. The oxide layer 411 of the first reflective layer 41 is formed simultaneously with the oxide layer 532 of the current confinement layer 53.

[0094] The first reflective layer 41 having a high Al concentration is easily oxidized, and volume shrinkage occurs due to oxidation. Therefore, the second thickness T2 of the oxide layer 411 in the Z-axis direction is smaller than the first thickness T1 of the first reflective layer 41 in the second region 442. Therefore, the first light reflective layer 40X is distorted at the boundary portion 83X between the first reflective layer 41 and the oxide layer 411. The stress due to this distortion affects the life of the light emitting unit 51.

[0095] The surface-emitting laser device of the second comparative example is configured to emit laser light from the light-emitting surface 511 of the light-emitting portion 51. In the surface-emitting laser device of the second comparative example, the first contact portion 714 of the first electrode 71 includes an opening through which the laser light passes. In the surface-emitting laser device of the second comparative example, the reflectance of the second light reflecting layer 60 is set higher than the reflectance of the first light reflecting layer 40 between the light generating layer 30 and the light-emitting surface 511. That is, the surface-emitting laser device 10X of the first comparative example has a larger number of layers of the first light reflecting layer 40X than the surface-emitting laser device of the second comparative example. Therefore, it can be said that the surface-emitting laser device 10X of the first comparative example has a larger number of oxide layers 411 generated and has a larger effect due to the oxide layers 411 than the surface-emitting laser device of the second comparative example.

[0096] As shown in FIG. 3, the first light reflecting layer 40 of the surface-emitting laser device 10 of the embodiment includes a first region 441 provided between the light-emitting section side surface 512 and the end of the first opening 741 of the first insulating film 74 in a plan view. The first region 441 includes Al and Zn, and has a lower Al composition ratio than the first reflecting layer 41. Therefore, in the surface-emitting laser device 10 of the embodiment, the number of first reflecting layers 41 exposed to the light-emitting section side surface 512 of the light-emitting section 51 is smaller than that of the surface-emitting laser device 10X of the first comparative example. Therefore, it is possible to suppress the inclusion of the oxide layer 411 in the multiple first reflecting layers 41 of the first light reflecting layer 40. Therefore, it is possible to reduce the occurrence of distortion and stress in the first light reflecting layer 40.

[0097] (Effects of the embodiment) As described above, according to this embodiment, the following effects are achieved. (1) The surface-emitting laser device 10 includes a semiconductor substrate 21, a light-emitting section 51, a first insulating film 74, and a first electrode 71. The semiconductor substrate 21 includes a first substrate surface 211 facing the Z-axis direction, and a second substrate surface 212 facing the opposite side to the first substrate surface 211. The light-emitting section 51 is provided on the first substrate surface 211, and includes a light-emitting section surface 511 facing the same direction as the first substrate surface 211. The first insulating film 74 covers the light-emitting section surface 511, and includes a first opening 741 exposing a part of the light-emitting section surface 511. The first electrode 71 covers the first opening 741 of the first insulating film 74, and is in contact with the light-emitting section surface 511.

[0098] The light emitting section 51 includes a light generating layer 30, a first light reflecting layer 40 of a first conductivity type, a second light reflecting layer 60 of a second conductivity type, and a current confinement layer 53. The second light reflecting layer 60 is provided on the first substrate surface 211. The light generating layer 30 is provided on the side opposite the semiconductor substrate 21 with respect to the second light reflecting layer 60. The first light reflecting layer 40 is provided on the side opposite the second light reflecting layer 60 with respect to the light generating layer 30. The current confinement layer 53 is provided on the first light reflecting layer 40 and includes a passing layer 531 through which a current for the light generating layer 30 passes, and an oxide layer 532 formed to surround the passing layer 531.

[0099] The first light reflecting layer 40 is made of a material containing Al and includes a plurality of first reflecting layers 41 and a plurality of second reflecting layers 42 arranged alternately in the Z-axis direction. The Al composition ratio of the first reflecting layer 41 is higher than the Al composition ratio of the second reflecting layer 42. A second region 442 including the first reflecting layer 41 and the second reflecting layer 42 is provided at a position overlapping the passing layer 531. The first light reflecting layer 40 includes a light emitting section side surface 512 which is an end face in a direction perpendicular to the Z-axis direction, and a first region 441 which is provided on the light emitting section side surface 512, contains Al and Zn, and has a lower Al composition ratio than the first reflecting layer 41.

[0100] The first region 441 is provided on the light-emitting section side surface 512 which is the side surface of the first light reflecting layer 40. Therefore, the first reflecting layer 41 having a high Al composition ratio is not exposed to the light-emitting section side surface 512. For this reason, the surface-emitting laser device 10 can prevent the oxide layer 411 from being included in the multiple first reflecting layers 41 of the first light reflecting layer 40. Therefore, the generation of distortion and stress in the first light reflecting layer 40 can be reduced. Furthermore, the reduction in the life span of the surface-emitting laser device 10 can be suppressed.

[0101] (2) The first region 441 contains Al and Zn, and has a lower Al composition ratio than the first reflective layer 41. Therefore, the first region 441 is less susceptible to oxidation than the first reflective layer 41, and volume change in the first light reflective layer 40 can be suppressed.

[0102] (3) A first thickness T1 of the first light reflecting layer 40 included in the light emitting section 51 is greater than a second thickness T2 of the second light reflecting layer 60. The number of repetitions (number of layers) of the first reflecting layer 41 and the second reflecting layer 42 included in the first light reflecting layer 40 is greater than the number of repetitions (number of layers) of the third reflecting layer 61 and the fourth reflecting layer 62 included in the second light reflecting layer 60. The surface emitting laser device 10 can emit laser light from the semiconductor substrate 21 side.

[0103] (Example of change) The above embodiment can be modified, for example, as follows. The above embodiment and the following modified examples can be combined with each other as long as no technical contradiction occurs. In the following modified examples, the same reference numerals as in the above embodiment are used for the parts common to the above embodiment, and the description thereof will be omitted.

[0104] The conductivity type and impurities in the surface emitting laser device 10 may be changed as appropriate. The first conductivity type may be n-type. The second conductivity type may be p-type. The first conductivity type first light reflecting layer 40 may contain Si and Te (tellurium) as n-type impurities. The second conductivity type second light reflecting layer 60 may contain at least one of C and Mg as p-type impurities. The semiconductor substrate 21 may be a p-type substrate containing impurities of the second conductivity type. The semiconductor substrate 21 may be an i-type substrate containing no impurities. The first region 441 of the first light reflecting layer 40 contains Zn. Zn is one of the p-type impurities. The second region 442 contains Si and Te as n-type impurities. Therefore, the electrical resistance value of the first region 441 is higher than the electrical resistance value of the second region 442.

[0105] The first conductivity type may be p-type. The second conductivity type may be n-type. The first conductivity type first light reflecting layer 40 may contain at least one of C and Mg as p-type impurities. The second conductivity type second light reflecting layer 60 may contain Si as n-type impurities. The semiconductor substrate 21 may be an n-type substrate containing impurities of the second conductivity type. The first region 441 of the first light reflecting layer 40 contains Zn. Zn is one of p-type impurities. Therefore, the first region 441 contains more p-type impurities than the second region 442 which does not contain Zn. Therefore, the electrical resistance value of the first region 441 is lower than the electrical resistance value of the second region 442. When the first conductivity type is p-type, it can be said that the carrier concentration of the first region 441 is higher than the carrier concentration of the second region 442.

[0106] The configuration of the surface-emitting laser device 10 may be modified as appropriate. 10, the first region 441 may be provided between the light-emitting portion side surface 512 of the light-emitting portion 51 and the end 741A of the first opening 741 of the first insulating film 74 in a plan view. It can be said that the first region 441 is formed so as to surround the first contact portion 714 of the first electrode 71 in a plan view. It can also be said that the first region 441 is formed so as not to be in contact with the first contact portion 714 of the first electrode 71.

[0107] The surface-emitting laser device 10B of the modified example shown in FIG. 11 is different from the surface-emitting laser device 10B shown in FIG. 10 in the size of the first opening 741 of the first insulating film 74 of the insulating film 73. The end 741A of the first opening 741 of the first insulating film 74 may extend further inward than the inner end 532A of the oxide layer 532 of the current confinement layer 53. The first contact portion 714 of the first electrode 71 arranged in the first opening 741 is smaller than the passing layer 531 of the current confinement layer 53. It can be said that the first contact portion 714 of the first electrode 71 is formed so as to overlap a part of the passing layer 531 of the current confinement layer 53 in a plan view. In the surface-emitting laser device 10B, the distance between the first contact portion 714 of the first electrode 71 and the first region 441 can be made larger than the surface-emitting laser device 10A shown in FIG. 10. Therefore, when the first conductivity type is p-type, the first contact portion 714 of the first electrode 71 can be separated from the first region 441 having a low electrical resistance. Then, the driving current flowing from the first electrode 71 to the light generating layer 30 (active layer 31) can be prevented from flowing to the first region 441.

[0108] The surface-emitting laser device 10C of the modified example shown in FIG. 12 is different from the surface-emitting laser device 10B shown in FIG. 11 in the shapes of the first region 441 and the second region 442. The boundary portion 81 between the first region 441 and the second region 442 is formed such that the range of the second region 442 in the direction perpendicular to the Z-axis direction from the light-emitting portion surface 511 of the light-emitting portion 51 toward the current confinement layer 53 is large. The inner end portion 441A of the first region 441 may be located inside the inner end portion 532A of the oxide layer 532 of the current confinement layer 53 in a plan view. The inner end portion 441A of the first region 441 is located inside the lower end portion 441B of the first region 441. It can be said that the first region 441 protrudes inside the oxide layer 532 of the current confinement layer 53 in a plan view.

[0109] 13, the first region 441 may be separated from the oxide layer 532 of the current confinement layer 53. An inner end 441C at a lower end 441B of the first region 441 may be formed in any shape, such as an arc shape.

[0110] As in the surface-emitting laser device 10E of the modified example shown in FIG. 14, the first region 441 is provided between the light-emitting portion side surface 512 of the light-emitting portion 51 and the end 741A of the first opening 741 of the first insulating film 74 in a plan view. The first contact portion 714 of the first electrode 71 is provided at a position overlapping with the passing layer 531 of the current confinement layer 53 in a plan view. Therefore, it can be said that the first region 441 is provided between the light-emitting portion side surface 512 of the light-emitting portion 51 and the passing layer 531 of the current confinement layer 53 in a plan view. It can also be said that the first region 441 is provided at a position overlapping with the oxide layer 532 of the current confinement layer 53 in a plan view.

[0111] The inner end 441A of the first region 441 may be in an arc shape extending between the light emitting portion surface 511 of the light emitting portion 51 and the light emitting portion side surface 512 of the light emitting portion 51. The inner end 441A of the first region 441 is located closer to the light emitting portion side surface 512 of the light emitting portion 51 than the end 714A of the first contact portion 714 of the first electrode 71 in a plan view. The inner end 441A of the first region 441 may be formed so as to approach the light emitting portion side surface 512 of the light emitting portion 51, from the light emitting portion surface 511 of the light emitting portion 51 toward the oxide layer 532 of the current confinement layer 53.

[0112] The oxide layer 532 of the current confinement layer 53 may extend to the inside of the light emitting section 51 beyond an end 741A of the first opening 741 at an end of the first opening 741 of the first insulating film 74 in a plan view. The oxide layer 532 of the current confinement layer 53 may extend to the inside of the light emitting section 51 beyond an end 714A of the first contact section 714 of the first electrode 71 in a plan view. A distance L1 between the inner end 441A of the first region 441 and the first opening 741 of the first insulating film 74 is longer than a distance L2 between the end 741A of the first opening 741 of the first insulating film 74 and an inner end 532A of the oxide layer 532. The distance L1 between the inner end 441A of the first region 441 and the first opening 741 of the first insulating film 74 may be equal to the distance L2 between the end 741A of the first opening 741 of the first insulating film 74 and the inner end 532A of the oxide layer 532 of the current confinement layer 53. The distance L1 between the inner end 441A of the first region 441 and the end 741A of the first opening 741 of the first insulating film 74 may be shorter than the distance L2 between the end 741A of the first opening 741 of the first insulating film 74 and the inner end 532A of the oxide layer 532 of the current confinement layer 53.

[0113] The first light reflecting layer 40 of the light emitting section 51 may include a first reflecting layer 41A between the lower end 441B of the first region 441 and the current narrowing layer 53. The first reflecting layer 41A is exposed from the light emitting section side surface 512 between the first region 441 and the current narrowing layer 53. The first reflecting layer 41A includes an oxide layer 411 exposed from the light emitting section side surface 512. The oxide layer 411 may include an Al oxide. The first reflecting layer 41A is a semiconductor layer having a high Al composition ratio. The oxide layer 411 is formed by oxidation of the first reflecting layer 41A exposed from the light emitting section side surface 512.

[0114] As shown in FIG. 15 and FIG. 16, the surface-emitting laser device 10F of the modified example includes a second opening 751 of the second insulating film 75 and a second connection portion 723 of the second electrode 72. The second opening 751 of the second insulating film 75 is formed in a ring shape surrounding the light-emitting portion 51 in a plan view. The second opening 751 of the second insulating film 75 is formed in a closed ring shape in a plan view. The second connection portion 723 of the second electrode 72 is formed in a ring shape surrounding the light-emitting portion 51 in a plan view. The second connection portion 723 of the second electrode 72 is formed in a closed ring shape in a plan view. The surface-emitting laser device 10F of this modified example can increase the contact area between the second electrode 72 and the second light-reflecting layer 60.

[0115] The surface-emitting laser device 10F of the modified example includes an insulating film 77 that covers at least a part of the second connection portion 723 of the second electrode 72. The insulating film 77 is interposed between the second connection portion 723 of the second electrode 72 and the first wiring portion 712 of the first electrode 71. The insulating film 77 electrically insulates between the second connection portion 723 of the second electrode 72 and the first wiring portion 712 of the first electrode 71. The insulating film 77 may cover the entire second connection portion 723. Alternatively, the insulating film 77 may partially cover the second connection portion 723 so as to expose a part or a plurality of parts of the second connection portion 723.

[0116] 17, the surface-emitting laser device 10G may include a plurality of light-emitting sections 51. The number of the light-emitting sections 51 may be any number equal to or greater than two. By including a plurality of light-emitting sections 51, the laser output of the surface-emitting laser device 10G can be increased.

[0117] The light emitting sections 51 are arranged at intervals from each other in the X-axis direction and the Y-axis direction in a plan view. In one example, the light emitting sections 51 are arranged in a staggered manner in a plan view. In particular, the light emitting sections 51 are arranged such that one light emitting section 51 is located at each of the three vertices of a triangle (for example, an equilateral triangle) in a plan view. It can also be said that the light emitting sections 51 are arranged such that one light emitting section 51 is located at each of the six vertices of a hexagon (for example, a regular hexagon) in a plan view. The light emitting sections 51 can be arranged in any manner, such as in a matrix or radial (concentric) pattern.

[0118] The term "on" as used in this disclosure includes both the meanings of "on" and "above" unless the context clearly indicates otherwise. Thus, the phrase "a first layer is formed on a second layer" is intended to mean that in some embodiments, the first layer may be disposed directly on the second layer in contact with the second layer, while in other embodiments, the first layer may be disposed above the second layer without contacting the second layer. That is, the term "on" does not exclude a structure in which another layer is formed between the first layer and the second layer.

[0119] The Z-axis direction used in the present disclosure does not necessarily have to be a vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure (for example, the structure shown in FIG. 1) are not limited to the "up" and "down" of the Z-axis direction described in this specification being "up" and "down" of the vertical direction. For example, the X-axis direction may be a vertical direction, or the Y-axis direction may be a vertical direction.

[0120] (Additional Note) The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding, not for the purpose of limitation, the components described in the appendices are given the reference symbols of the corresponding components in the embodiments. The reference symbols are shown as examples for the purpose of aiding understanding, and the components described in each appendix should not be limited to the components indicated by the reference symbols.

[0121] (Appendix 1) A semiconductor substrate (21) including a first substrate surface (211) facing a thickness direction (Z) and a second substrate surface (212) facing an opposite side to the first substrate surface (211); a light-emitting portion (51) provided on the first substrate surface (211) and including a light-emitting portion surface (511) facing the same direction as the first substrate surface (211); a first insulating film (74) covering the light-emitting surface (511) and including a first opening (741) exposing a portion of the light-emitting surface (511); a first electrode (71) covering the first opening (741) of the first insulating film (74) and in contact with the light emitting surface (511); Including, The light emitting unit (51) a second light reflecting layer (60) of a second conductivity type provided on the first substrate surface (211); a light generating layer (30) provided on the opposite side of the second light reflecting layer (60) from the semiconductor substrate (21); a first light reflecting layer (40) of a first conductivity type provided on the opposite side of the light generating layer (30) to the second light reflecting layer (60); a current confinement layer (53) provided on the first light reflecting layer (40) and including a passing layer (531) through which a current for the light generating layer (30) passes, and an oxide layer (532) formed to surround the passing layer (531); Including, the first light reflecting layer (40) is made of a material containing Al and includes a plurality of first reflecting layers (41) and a plurality of second reflecting layers (42) alternately arranged in the thickness direction (Z), the Al composition ratio of the first reflecting layers (41) is higher than the Al composition ratio of the second reflecting layers (42), a second region (442) including the first reflective layer (41) and the second reflective layer (42) is provided at a position overlapping with the passage layer (531); The first light reflecting layer (40) is A side surface (512) which is an end surface in a direction perpendicular to the thickness direction (Z); a first region (441) provided on the side surface (512), containing Al and Zn and having an Al composition ratio lower than that of the first reflective layer (41); A surface emitting laser device comprising:

[0122] (Appendix 2) The second light reflecting layer (60) includes a plurality of third reflecting layers (61) and a plurality of fourth reflecting layers (62) alternately arranged in the thickness direction (Z), the number of layers of the first reflective layer (41) and the plurality of second reflective layers (42) is greater than the number of layers of the third reflective layer (61) and the fourth reflective layer (62); 2. A surface-emitting laser device as described in claim 1.

[0123] (Appendix 3) The first conductivity type is p-type and the second conductivity type is n-type. 3. A surface-emitting laser device as described in appendix 2.

[0124] (Appendix 4) the first region (441) is provided between the side surface (512) of the first reflective layer (41) and an end (741A) of the first opening (741) of the first insulating film (74), as viewed from the thickness direction (Z); 4. A surface-emitting laser device as described in appendix 3.

[0125] (Appendix 5) an inner end portion (441A) of the first region (441) is located closer to a side surface (512) than an end portion of the first opening (741) of the first insulating film (74) is when viewed from the thickness direction (Z); 5. A surface-emitting laser device as described in appendix 4.

[0126] (Appendix 6) the oxide layer (532) extends further inward than the end (741A) of the first opening (741) of the first insulating film (74); 6. The surface-emitting laser device according to claim 4 or 5.

[0127] (Appendix 7) a distance between an inner end (441A) of the first region (441) and the first opening (741) of the first insulating film (74) is longer than a distance between the first opening (741) of the first insulating film (74) and an inner end (441A) of the oxide layer (532); 7. A surface-emitting laser device according to claim 6.

[0128] (Appendix 8) an inner end (441A) of the first region (441) approaches the side surface (512) of the first light reflecting layer (40) toward the oxide layer (532); 8. The surface-emitting laser device according to claim 4,

[0129] (Appendix 9) The resistance value of the first region (441) is lower than the resistance value of the second region (442); 4. A surface-emitting laser device as described in appendix 3.

[0130] (Appendix 10) The first conductivity type is n-type and the second conductivity type is p-type. 3. A surface-emitting laser device as described in appendix 2.

[0131] (Appendix 11) The resistance value of the first region (441) is higher than the resistance value of the second region (442); 11. The surface-emitting laser device according to claim 10.

[0132] (Appendix 12) an inner end (441A) of the first region (441) extends further inward than an end (741A) of the first opening (741) of the first insulating film (74); The first electrode (71) is in contact with the first region (441). 12. The surface-emitting laser device according to claim 10 or 11.

[0133] (Appendix 13) the first electrode (71) is disposed in the first opening (741) and includes a first contact portion (714) in contact with the light-emitting portion surface (511); When viewed from the thickness direction (Z), the first region (441) overlaps with the first contact portion (714). 13. The surface-emitting laser device according to claim 10,

[0134] (Appendix 14) the carrier concentration of the first region (441) is different from the carrier concentration of the second region (442); 14. A surface-emitting laser device according to any one of claims 1 to 13.

[0135] (Appendix 15) The Al composition ratio in the first region (441) is lower than the Al composition ratio in the first reflective layer (41) and is higher than the Al composition ratio in the second reflective layer (42). 15. A surface-emitting laser device according to any one of claims 1 to 14.

[0136] (Appendix 16) The first region (441) includes a plurality of first layers (461) and a plurality of second layers (462) alternately arranged in the thickness direction (Z), The Al composition ratio of the first layer (461) is lower than the Al composition ratio of the first reflective layer (41), The Al composition ratio of the second layer (462) is higher than the Al composition ratio of the second reflective layer (42). 16. A surface-emitting laser device according to any one of claims 1 to 15.

[0137] (Appendix 17) the interface between the layers in the first region (441) is blurred more than the interface in the second region (442); 17. A surface-emitting laser device according to any one of claims 1 to 16.

[0138] (Appendix 18) When viewed from the thickness direction (Z), the first opening (741) of the first insulating film (74) overlaps with a part of the passing layer (531) of the current confinement layer (53). 18. A surface-emitting laser device according to any one of claims 1 to 17.

[0139] (Appendix 19) The first region (441) protrudes inward beyond the oxide layer (532). 19. The surface-emitting laser device according to claim 18.

[0140] (Appendix 20) The light emitting portion (51) has a circular shape when viewed from the thickness direction (Z), The passing layer (531) of the current confinement layer (53) is disposed at the center of the light emitting section (51) when viewed from the thickness direction (Z). 20. A surface-emitting laser device according to any one of claims 1 to 19.

[0141] (Appendix 21) the third reflective layers (61) and the fourth reflective layers (62) are made of a material containing Al; 3. A surface-emitting laser device as described in appendix 2.

[0142] (Appendix 22) The Al composition ratio of the third reflective layers (61) is higher than the Al composition ratio of the fourth reflective layers (62); 22. The surface-emitting laser device according to claim 21.

[0143] (Appendix 23) a second insulating film (75) covering the second light reflecting layer (60) and including a second opening (751) exposing a portion of the second light reflecting layer (60); a second electrode (72) covering the second opening (751) and in contact with the second light reflecting layer (60); 23. The surface-emitting laser device according to claim 1, further comprising:

[0144] (Appendix 24) The second opening (751) is formed so as to surround the light-emitting portion (51) when viewed from the thickness direction (Z). 24. The surface-emitting laser device according to claim 23.

[0145] (Appendix 25) the light-emitting portion (51) is defined by a removed portion (52) that passes through the first reflective layer (41) and the light-generating layer (30) and reaches the second light-reflective layer (60); The removal portion (52) includes an inner wall surface (521), an outer wall surface (522), and a bottom surface (523) connecting the inner wall surface (521) and the outer wall surface (522), the bottom surface (523) of the removal portion (52) faces the same direction as the light-emitting portion surface (511) of the light-emitting portion (51); the second insulating film (75) covers the bottom surface (523), and the second opening (751) is a part of the bottom surface (523) and exposes the second light reflecting layer (60); 25. The surface-emitting laser device according to claim 23 or 24.

[0146] (Appendix 26) the side surface (512) of the first light reflecting layer (40) is a part of the inner wall surface (521) of the removed portion (52); 26. The surface-emitting laser device according to claim 25.

[0147] (Appendix 27) The light generating layer (30) includes an active layer (31) and a first cladding layer (32) and a second cladding layer (33) disposed on either side of the active layer (31). 27. A surface-emitting laser device according to claim 1.

[0148] (Appendix 28) A plurality of the light emitting units (51), 28. A surface-emitting laser device according to claim 1.

[0149] The above description is merely illustrative. Those skilled in the art may recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of describing the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and alterations that fall within the scope of the present disclosure, including the scope of the claims. [Explanation of symbols]

[0150] 10,10A~10G Surface emitting laser device 11 First main surface 12 Second main surface 13~16 Side 21 Semiconductor substrate 211 First board surface 212 Second board surface 213~216 Side of the board 22 Semiconductor layer 221 Page 1 222 2nd page 223~226 Side 30 Light generating layer 31 Active layer 32 First cladding layer 33 Second cladding layer 40 1st light reflective layer 41 1st reflective layer 41A 1st reflective layer 411 Oxide layer 42 Second reflective layer 441 First area 441A Inner end 441B Bottom end 441C Inner end 442 Second area 461 1st layer 462 2nd layer 51 Light emitting part 511 Light-emitting surface 512 Light-emitting part side 52 Removal part 521 Inner wall surface 522 Exterior wall 523 Bottom 53 Current confinement layer 531 Passing layer 532 Oxide layer 532A inner end 54 Frame section 541 Frame surface 542 Frame side 60 Second light reflective layer 601 1st page 61 Third reflective layer 61A 3rd reflective layer 611 Oxide layer 62 4th reflective layer 71 1st electrode 711 First pad section 712 1st wiring section 713 First Connection 714 1st Contact Part 714A End 72 2nd electrode 721 Second Pad Section 722 2nd wiring section 723 Second Connection 723A End 724 2nd Contact Part 73 Insulating Film 74 First insulating film 741 First Opening 741A End 75 Second insulating film 751 Second Opening 77 Insulating Film 81 Boundary part 761 1st terminal electrode 762 2nd terminal electrode 763 3rd terminal electrode 821,822 interface α1,α2 Al composition ratio β1~β4 Al composition ratio L1,L2 distance O1 center T1 First thickness T2 Second thickness W1 1st wiring width W2 Second wiring width

Claims

1. a semiconductor substrate including a first substrate surface facing in a thickness direction and a second substrate surface facing in a direction opposite to the first substrate surface; a light emitting portion provided on the first substrate surface and including a light emitting portion surface facing the same direction as the first substrate surface; a first insulating film covering a surface of the light emitting portion and including a first opening exposing a portion of the surface of the light emitting portion; a first electrode covering the first opening of the first insulating film and in contact with a surface of the light emitting portion; Including, The light emitting unit includes: a second light reflecting layer of a second conductivity type provided on a surface of the first substrate; a light generating layer disposed on an opposite side of the semiconductor substrate from the second light reflecting layer; a first light reflecting layer of a first conductivity type disposed on an opposite side of the light generating layer from the second light reflecting layer; a current confinement layer provided on the first light reflecting layer, the current confinement layer including a passing layer through which a current for the light generating layer passes and an oxide layer formed to surround the passing layer; Including, the first light reflective layer is made of a material containing Al and includes a plurality of first reflective layers and a plurality of second reflective layers alternately arranged in the thickness direction, an Al composition ratio of the first reflective layer is higher than an Al composition ratio of the second reflective layer, a second region including the first reflective layer and the second reflective layer is provided at a position overlapping the passage layer, The first light reflective layer is A side surface which is an end surface in a direction perpendicular to the thickness direction; a first region provided on the side surface, containing Al and Zn, and having an Al composition ratio lower than that of the first reflective layer; A surface emitting laser device comprising:

2. the second light reflective layer includes a plurality of third reflective layers and a plurality of fourth reflective layers alternately arranged in the thickness direction, the number of layers of the first reflective layer and the plurality of second reflective layers is greater than the number of layers of the third reflective layer and the fourth reflective layer; 2. The surface emitting laser device according to claim 1.

3. The first conductivity type is p-type and the second conductivity type is n-type.

3. The surface emitting laser device according to claim 2.

4. the first region is provided between the side surface of the first reflective layer and an end of the first opening of the first insulating film when viewed from the thickness direction.

4. The surface emitting laser device according to claim 3.

5. an inner end portion of the first region is located closer to a side surface than an end portion of the first opening of the first insulating film when viewed in the thickness direction; 5. The surface emitting laser device according to claim 4.

6. the oxide layer extends to an inner portion beyond the end of the first opening of the first insulating film; 5. The surface emitting laser device according to claim 4.

7. a distance between an inner end of the first region and the first opening of the first insulating film is longer than a distance between the first opening of the first insulating film and an inner end of the oxide layer; 7. The surface emitting laser device according to claim 6.

8. an inner end of the first region approaches the side surface of the first light reflecting layer toward the oxide layer; 5. The surface emitting laser device according to claim 4.

9. The resistance value of the first region is lower than the resistance value of the second region.

4. The surface emitting laser device according to claim 3.

10. The first conductivity type is n-type and the second conductivity type is p-type.

3. The surface emitting laser device according to claim 2.

11. The resistance value of the first region is higher than the resistance value of the second region.

11. The surface emitting laser device according to claim 10.

12. an inner end of the first region extends to an inner side beyond an end of the first opening of the first insulating film, The first electrode is in contact with the first region.

11. The surface emitting laser device according to claim 10.

13. the first electrode is disposed in the first opening and includes a first contact portion in contact with a surface of the light emitting portion; When viewed in the thickness direction, the first region overlaps with the first contact portion.

11. The surface emitting laser device according to claim 10.

14. The carrier concentration of the first region is different from the carrier concentration of the second region.

2. The surface emitting laser device according to claim 1.

15. an Al composition ratio in the first region is lower than an Al composition ratio in the first reflective layer and higher than an Al composition ratio in the second reflective layer; 2. The surface emitting laser device according to claim 1.

16. the first region includes a plurality of first layers and a plurality of second layers alternately arranged in the thickness direction, the Al composition ratio of the first layer is lower than the Al composition ratio of the first reflective layer, The Al composition ratio of the second layer is higher than the Al composition ratio of the second reflective layer.

2. The surface emitting laser device according to claim 1.

17. the interface between the layers in the first region is more blurred than the interface in the second region; 2. The surface emitting laser device according to claim 1.

18. When viewed from the thickness direction, the first opening of the first insulating film overlaps with a part of the passage layer of the current confinement layer.

2. The surface emitting laser device according to claim 1.

19. The first region protrudes inward beyond the oxide layer.

20. The surface emitting laser device according to claim 18.

20. The light emitting portion has a circular shape when viewed from the thickness direction, The passage layer of the current confinement layer is disposed at the center of the light emitting portion when viewed from the thickness direction.

2. The surface emitting laser device according to claim 1.

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