Photosensitive resin composition

Abstract

To provide a photosensitive resin composition and the like capable of yielding a cured product which achieves superior resolution limit, a wide process window, and reduced crack occurrence.SOLUTION: A photosensitive resin composition comprises (A) a polyimide precursor, (B) a crosslinking agent having one ethylenically unsaturated bond, (C) a crosslinking agent having two or more ethylenically unsaturated bonds, and (D) a photoradical generator.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to a photosensitive resin composition, and further to a photosensitive film, a semiconductor package substrate, and a semiconductor device obtained by using the photosensitive resin composition. [Background technology]

[0002] Polyimide resins, which have excellent heat resistance and insulating properties, have been used for insulating layers of semiconductor devices. In addition, since polyimide resins have low solubility in solvents, they are used in photosensitive resin compositions in the form of polyimide precursors, and after forming an insulating layer or the like, the polyimide precursors are cyclized to form an insulating layer (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2003-084435 A Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, with the increase in communication speed and capacity in communication devices, it is desirable for photosensitive resin compositions used in forming insulating layers of semiconductor package substrates of communication devices or rewiring layers of wafer level packages (WLPs) to have excellent limit resolution from the viewpoint of reducing the diameter of holes (via holes) provided in the rewiring layers. In addition, from the viewpoint of ease of manufacturing semiconductor packages, it is desirable for the photosensitive resin composition used in semiconductor package substrates to have a wide process window of exposure dose when exposing the photosensitive resin composition. Here, the limit resolution refers to the limit of the size of the opening that can be formed in the photosensitive resin composition by exposure and development, and the smaller the better. In addition, the process window refers to a range in which cracks do not occur in the opening that can be formed in the photosensitive resin composition even if the exposure dose fluctuates from the optimal value, or within an acceptable range.

[0005] However, the present inventors have found that increasing the limiting resolution of a photosensitive resin composition reduces the process window, making the holes more susceptible to cracks after the exposure and development steps.

[0006] The present invention has been made in view of the above problems, and has an object to provide a photosensitive resin composition capable of giving a cured product having excellent limiting resolution, a wide process window, and suppressed cracking, and a photosensitive film, a semiconductor package substrate, and a semiconductor device obtained using the photosensitive resin composition. [Means for solving the problem]

[0007] As a result of intensive research, the present inventors have found that the above object can be achieved by incorporating a crosslinking agent having one ethylenically unsaturated bond and a crosslinking agent having two or more ethylenically unsaturated bonds in a polyimide precursor in combination, and have thus completed the present invention.

[0008] That is, the present invention includes the following. [1] (A) a polyimide precursor, (B) a crosslinker having one ethylenically unsaturated bond; (C) a crosslinker having two or more ethylenically unsaturated bonds, and (D) a photosensitive resin composition containing a photoradical generator. [2] The photosensitive resin composition according to [1], wherein the component (A) contains a polyimide precursor containing an indane skeleton. [3] The photosensitive resin composition according to [1] or [2], wherein the component (B) contains a (meth)acrylate containing a carboxyl group or an aromatic ring. [4] The photosensitive resin composition according to any one of [1] to [3], wherein the component (C) contains a di- to hexa-functional (meth)acrylate. [5] The photosensitive resin composition according to any one of [1] to [4], wherein the component (D) has an oxime ester structure. [6] The photosensitive resin composition according to any one of [1] to [5], wherein a is the content of the component (A) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass, and b is the content of the component (B) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass, and b / a is 0.001 or more and 0.11 or less. [7] The photosensitive resin composition according to any one of [1] to [6], wherein the content of the component (B) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass is a, and the content of the component (C) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass is b, in which b / c is 0.1 or more and 1.1 or less. [8] A photosensitive film comprising a support and a photosensitive resin composition layer formed on the support, the photosensitive resin composition layer comprising the photosensitive resin composition according to any one of [1] to [7]. [9] A semiconductor package substrate comprising an insulating layer formed from a cured product of the photosensitive resin composition according to any one of [1] to [7].

[10] A semiconductor device comprising the semiconductor package substrate described in [9]. Effect of the Invention

[0009] According to the present invention, it is possible to provide a photosensitive resin composition capable of giving a cured product having excellent limiting resolution, a wide process window, and suppressed cracking, and a photosensitive film, a semiconductor package substrate, and a semiconductor device obtained using the photosensitive resin composition. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The photosensitive resin composition, the photosensitive film, the semiconductor package substrate, the semiconductor device, and the method for producing the semiconductor package substrate of the present invention will be described in detail below. In the following description, the term "dielectric constant" refers to the "relative dielectric constant" unless otherwise specified.

[0011] [Photosensitive resin composition] The photosensitive resin composition of the present invention contains (A) a polyimide precursor, (B) a crosslinking agent having one ethylenically unsaturated bond, (C) a crosslinking agent having two or more ethylenically unsaturated bonds, and (D) a photoradical generator. By incorporating the components (A) to (D) in combination into the photosensitive resin composition, a cured product having excellent limit resolution, a wide process window, and suppressed crack generation can be obtained. In addition, a cured product having excellent dielectric tangent and dielectric constant can usually be obtained. The photosensitive resin composition of the present invention is suitable as a negative photosensitive resin composition. Each component contained in the photosensitive resin composition will be described below.

[0012] <(A) Polyimide precursor> The photosensitive resin composition contains a polyimide precursor (A) as component (A). By including component (A) in the photosensitive resin composition, a cured product having excellent limit resolution and excellent dielectric properties can be obtained. The component (A) may be used alone or in combination of two or more.

[0013] The component (A) is a resin that can form a polyimide by ring closure upon heating, and may contain a plurality of one or more structural units selected from the group consisting of an amic acid structural unit and an amic acid ester structural unit. The amic acid structural unit refers to a structural unit having a structure obtained by reacting a carboxylic dianhydride with a diamine compound. The amic acid structural unit usually contains a carboxy group. The amic acid ester structural unit refers to a structural unit having a structure obtained by esterifying a part or all of the carboxy group, or a structural unit having a structure obtained by reacting a part or all of the carboxy group with an epoxy group of an epoxy compound containing an ethylenically unsaturated bond. The ethylenically unsaturated bond refers to a non-aromatic carbon-carbon unsaturated bond, such as a non-aromatic carbon-carbon double bond or carbon-carbon triple bond.

[0014] From the viewpoint of improving the limit resolution, it is preferable that the polyamic acid ester structural unit of the component (A) contains an indane skeleton. The indane skeleton represents the skeleton shown in the following (a1-1). When the polyamic acid ester structural unit contains an indane skeleton, the solubility of the non-exposed portion of the photosensitive resin composition layer in a developer can be increased. In particular, from the viewpoint of improving the limit resolution, it is preferable that the component (A) contains a trimethylindane skeleton shown in the following formula (a1-2). It is preferable that the polyamic acid ester structural unit contains an indane skeleton in a structural portion derived from a diamine compound. [ka]

[0015] The carboxylic acid dianhydride refers to a dianhydride of a carboxylic acid containing two acid anhydride groups (i.e., -CO-O-CO-) and an aliphatic carbon or aromatic carbon bonded to the acid anhydride groups. Specific examples of the carboxylic acid dianhydride include aliphatic acid dianhydrides and aromatic acid dianhydrides. The aliphatic acid dianhydride refers to a dianhydride of a carboxylic acid containing two acid anhydride groups and an aliphatic carbon bonded to the acid anhydride groups. The aromatic acid dianhydride refers to a dianhydride of a carboxylic acid containing two acid anhydride groups and an aromatic carbon bonded to the acid anhydride groups. Specific examples of the aliphatic acid dianhydride include aliphatic tetracarboxylic acid dianhydrides. Specific examples of the aromatic acid dianhydride include aromatic tetracarboxylic acid dianhydrides. These tetracarboxylic acid dianhydrides may be used alone or in combination of two or more.

[0016] The aliphatic carbon in the aliphatic dianhydride is usually a saturated aliphatic carbon. Preferably, the acid anhydride group is bonded to a saturated aliphatic chain, and the bonded acid anhydride group and the saturated aliphatic chain form a ring structure. This ring structure is usually a heterocycle consisting of oxygen atoms and carbon atoms, preferably a 5-membered or 6-membered ring, more preferably a 5-membered ring. In addition, the aliphatic dianhydride may contain an unsaturated aliphatic chain and an aromatic chain at a site other than the site where the acid anhydride group is directly bonded.

[0017] The molecular weight of the aliphatic acid dianhydride is preferably not more than 400. By setting the molecular weight within this range, swelling of the first photosensitive resin composition layer during development can be suppressed and the residual film rate can be effectively increased.

[0018] Examples of the aliphatic acid dianhydride include 1,2,4,5-cyclohexanetetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-endo-3-endo-5-exo-6-exo-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2-exo-3-exo-5-exo-6-exo- 2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic dianhydride, 2-(3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthyl)succinic dianhydride, 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, 1,2,3,4-butanetetracarboxylic dianhydride, etc. Among them, 2-(3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthyl)succinic dianhydride, 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, 1,2,3,4-butanetetracarboxylic dianhydride, etc. are mentioned.

[0019] Specific examples of aromatic acid dianhydrides include 4,4'-oxydiphthalic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, pyromellitic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 3,3',4,4'-para-terphenyltetracarboxylic dianhydride, 3,3',4,4'-meta-terphenyltetracarboxylic dianhydride, and decahydro-dimethanonaphthalenetetracarboxylic dianhydride.

[0020] Examples of the diamine compound include bis[2-(3-aminopropoxy)ethyl]ether, 1,4-butanediol-bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro-5,5-undecane, 1,2-bis(2-aminoethoxy)ethane, 1,2-bis(3-aminopropoxy)ethane, triethylene glycol-bis(3-aminopropyl)ether, polyethylene glycol-bis(3-aminopropyl)ether, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro-5,5-undecane, and 1,4-butanediol-bis(3-aminopropyl)ether. The diamine compound may be used alone or in combination of two or more. In addition, the diamine compound may be a diamine compound containing an aromatic ring. Among them, it is preferable that the diamine compound contains an indane skeleton. Examples of diamine compounds containing an indane skeleton include the diamine compounds represented by the following formulas (a2-1) to (a2-10). Among them, the diamine compounds represented by the formulas (a2-4) to (a2-7) are preferred, and the diamine compound represented by the formula (a2-4) is more preferred. [ka]

[0021] As the epoxy compound containing an ethylenically unsaturated bond, a compound containing an ethylenically unsaturated bond and an epoxy group can be used. The epoxy group may be contained as a glycidyl group. Examples of the epoxy compound containing an ethylenically unsaturated bond include glycidyl acrylate, glycidyl methacrylate, 4-hydroxybutyl acrylate glycidyl ether, and 3,4-epoxycyclohexylmethyl methacrylate. The epoxy compound containing an ethylenically unsaturated bond may be used alone or in combination of two or more.

[0022] (A) The polyimide precursor preferably contains a radical reactive group in the molecule of the polyimide precursor. The radical reactive group represents a reactive group that can undergo polymerization by radicals generated by heat or light, and examples thereof include groups containing non-aromatic carbon-carbon unsaturated bonds. When a polyimide precursor containing a radical reactive group is used, the polyimide precursor is crosslinked by exposure to light, and the solubility of the photosensitive resin composition layer in a developer can be effectively reduced. The radical reactive group may be contained, for example, in the esterified portion of the amic acid ester structural unit.

[0023] In addition, when the polyamic acid ester structural unit is a structural unit having a structure obtained by reacting a part or all of the carboxyl group with an epoxy group of an epoxy compound containing an ethylenically unsaturated bond, since the epoxy compound contains an ethylenically unsaturated bond, the epoxy compound residue may contain an ethylenically unsaturated bond, and therefore the epoxy compound residue can function as a radical reactive group.

[0024] As one embodiment of the component (A), it is preferable that it contains a structural unit represented by the following formula (A-1). [ka] (In formula (A-1), A represents a tetravalent organic group, B represents a divalent organic group, and R 1 and R 2 each independently represents a hydrogen atom or a monovalent organic group.

[0025] In formula (A-1), A represents a tetravalent organic group. The number of carbon atoms in A is preferably 6 to 40. Examples of the tetravalent organic group include a tetravalent organic group containing an aliphatic hydrocarbon group and a tetravalent organic group containing an aromatic hydrocarbon group.

[0026] The aliphatic hydrocarbon group contained in the tetravalent organic group contains an aliphatic carbon, and the carbonyl group shown in the formula (A-1) is bonded to the aliphatic carbon. The aliphatic carbon is usually a saturated aliphatic carbon. Preferably, the tetravalent organic group contains a saturated aliphatic chain, and the carbonyl group shown in the formula (A-1) is bonded to the saturated aliphatic chain. This saturated aliphatic chain preferably contains a carbon chain having 2 or 3 carbon atoms linking the two carbonyl groups shown in the formula (A-1), and preferably contains a carbon chain having 2 carbon atoms. The saturated aliphatic chain containing a carbon chain having 2 carbon atoms linking the two carbonyl groups shown in the formula (A-1) can be obtained by reacting an aliphatic acid dianhydride containing an acid anhydride group forming a 5-membered ring with a diamine compound. In addition, the saturated aliphatic chain containing a carbon chain having 3 carbon atoms linking the two carbonyl groups shown in the formula (A-1) can be obtained by reacting an aliphatic acid dianhydride containing an acid anhydride group forming a 6-membered ring with a diamine compound.

[0027] The aromatic hydrocarbon group contains an aromatic group, and the carbonyl group shown in the above formula (A-1) is bonded to the aromatic group. 1 Group and -COOR 2 an aromatic group in which the -CONH- group and the -CONH- group are in the ortho position with respect to each other, or an alicyclic aliphatic group (R 1 and R 2 is R in formula (A-1) 1 and R 2 (This is the same as above.)

[0028] An embodiment of A in formula (A-1) is, for example, a tetravalent aliphatic hydrocarbon group which may have a substituent. The tetravalent aliphatic hydrocarbon group may be a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group. The tetravalent aliphatic hydrocarbon group may be a chain-like hydrocarbon group, a cyclic hydrocarbon group (i.e., an alicyclic hydrocarbon group), or a combination thereof. The chain-like hydrocarbon group may be either linear or branched. In particular, from the viewpoint of particularly improving the developability, the tetravalent aliphatic hydrocarbon group preferably contains an aliphatic carbon ring, and more preferably, the carbonyl group shown in formula (A-1) is bonded to the aliphatic carbon ring. The number of carbonyl groups bonded to the aliphatic carbon ring is preferably 2 or more.

[0029] Examples of the substituent that the tetravalent organic group in A in formula (A-1) may have include linear, branched, or cyclic alkyl groups having 1 to 10 carbon atoms, such as methyl, ethyl, propyl, and n-butyl groups; alkenyl groups, such as vinyl, allyl, propenyl, and butenyl groups; halogen atoms, such as fluorine, chlorine, and bromine atoms; alkoxy groups having 1 to 10 carbon atoms, such as methoxy, ethoxy, and propoxy groups; hydroxyl groups; and halogen-substituted alkyl groups, such as trifluoromethyl groups. These substituents may be bonded to form a ring. The above-mentioned substituents may further have a substituent (hereinafter sometimes referred to as a "secondary substituent"). The substituent may be one type or two or more types.

[0030] The formula weight range of A in formula (A-1) is preferably not more than 328. When the formula weight of A is within the above range, it is usually possible to suppress swelling of the photosensitive resin composition during development and to effectively increase the residual film rate.

[0031] Examples of A in formula (A-1) include the groups shown in the following formulae (a3-1) to (a3-12), in which * represents a bond. [ka]

[0032] In formula (A-1), B represents a divalent organic group. The divalent organic group may contain an aromatic ring. In addition, the divalent organic group preferably contains an aromatic ring. In addition, the divalent organic group may contain an indane skeleton. The divalent organic group may further contain an aromatic ring in addition to the indane skeleton.

[0033] Examples of the divalent organic group represented by B include the groups (a4-1) to (a4-30) exemplified below. In addition, a group combining two or more of the groups (a4-1) to (a4-30) may be used as the divalent organic group. Among them, as B, the groups (a4-2) and (a4-21) to (a4-30) are preferred, the groups (a4-2) and (a4-24) to (a4-27) are more preferred, and the groups (a4-2) and (a4-24) are even more preferred. In the formula, * represents a bond. [ka] [ka] [ka] [ka]

[0034] The divalent organic group may have a substituent. Examples of the substituent include the same examples as those that the tetravalent organic group may have. The substituent may be one type or two or more types.

[0035] In formula (A-1), R 1 and R 2Each independently represents a hydrogen atom or a monovalent organic group. Examples of the monovalent organic group include a radical-reactive group and a saturated aliphatic group having 1 to 4 carbon atoms, and a radical-reactive group is preferred. As the radical-reactive group, for example, a group containing an ethylenically unsaturated bond may be used. Specific examples of the radical-reactive group include a vinyl group, an allyl group, a propargyl group, an ethynyl group, a phenylethynyl group, a butenyl group, a maleimide group, a nadimide group, a (meth)acryloyl group, a group represented by the following formula (A-2) described later, and the like. The "(meth)acryloyl group" includes a methacryloyl group, an acryloyl group, and combinations thereof. R in the formula (A-1) 1 and R 2 Each is preferably independently at least one radical-reactive group, and more preferably both are radical-reactive groups.

[0036] As the radical-reactive group, a group represented by the following formula (A-2) is preferred. Therefore, R 1 and R 2 Each is preferably independently a group represented by the following formula (A-2).

Chemical formula

[0037] In the formula (A-2), R 4a ~R 6a Each independently represents a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms. Examples of the aliphatic hydrocarbon group having 1 to 3 carbon atoms include an alkyl group having 1 to 3 carbon atoms. Examples of the alkyl group having 1 to 3 carbon atoms include a methyl group, an ethyl group, an n-propyl group, a 2-propyl group, etc., and among them, a methyl group is preferred.

[0038] In formula (A-2), X represents a divalent organic group. The divalent organic group may contain a heteroatom such as an oxygen atom or a nitrogen atom. It is preferable that the heteroatom is present as a substituent. Examples of the divalent organic group include a divalent aliphatic hydrocarbon group which may have a substituent, and a divalent aromatic hydrocarbon group which may have a substituent. Among them, the divalent organic group is preferably a divalent aliphatic hydrocarbon group which may have a substituent.

[0039] The divalent aliphatic hydrocarbon group, which may have a substituent, may be linear, branched, or cyclic. The divalent aliphatic hydrocarbon group may be saturated or unsaturated. The number of carbon atoms in the divalent aliphatic hydrocarbon group is preferably 1 to 10, more preferably 1 to 5. Examples of the divalent aliphatic hydrocarbon group include an alkylene group, an alkenylene group, and an alkynylene group.

[0040] Examples of the alkylene group include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group.

[0041] Examples of the alkenylene group include an ethenylene group, a propenylene group, a butenylene group, a pentenylene group, and a hexenylene group.

[0042] Examples of the alkynylene group include an ethynylene group and a propynylene group.

[0043] Among these, as the divalent aliphatic hydrocarbon group which may have a substituent, an alkylene group having 1 to 10 carbon atoms which may have a substituent is preferable, an alkylene group having 1 to 5 carbon atoms which may have a substituent is more preferable, an alkylene group having 1 to 3 carbon atoms which may have a substituent is still more preferable, and an ethylene group, a propylene group, or a 2-hydroxypropylene group is particularly preferable.

[0044] The number of carbon atoms in the divalent aromatic hydrocarbon group which may have a substituent is preferably 6 to 20, and more preferably 6 to 15. Examples of the divalent aromatic hydrocarbon group which may have a substituent include an arylene group, and examples of the arylene group include a 1,2-phenylene group, a 1,3-phenylene group, a 1,4-phenylene group, a naphthylene group, an anthracenylene group, a biphenylene group, and a 9,9-diphenyl-9H-fluorenylene group.

[0045] The divalent aliphatic hydrocarbon group and the divalent aromatic hydrocarbon group may have a substituent. Examples of the substituent include the same examples as those of the substituent that the tetravalent organic group in A may have, and among them, a hydroxyl group is preferable. The number of types of the substituent may be one or more.

[0046] Examples of formula (A-2) include the following groups (a5-1) to (a5-6). Among them, as formula (A-2), the group (a5-1), the group (a5-3), or the group (a5-4) is preferred, and the group (a5-1) is more preferred. In the formula, * represents a bond. [ka]

[0047] The component (A) preferably has a structural unit represented by the following formula (A-3). [ka] (In formula (A-3), A 1a represents a tetravalent organic group containing an aliphatic hydrocarbon group, B a represents a divalent organic group, R 1a and R 2a each independently represents a monovalent organic group containing an ethylenically unsaturated bond.

[0048] In formula (A-3), A 1a represents a tetravalent organic group containing an aliphatic hydrocarbon group. 1ais the same as the tetravalent organic group containing an aliphatic hydrocarbon group represented by A in formula (A-1).

[0049] In formula (A-3), B a represents a divalent organic group and is the same as B in formula (A-1).

[0050] In formula (A-3), R 1a and R 2a R each independently represents a monovalent organic group containing an ethylenically unsaturated bond. Examples of the monovalent organic group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a propargyl group, an ethynyl group, a phenylethynyl group, a butenyl group, a maleimide group, a nadimide group, a (meth)acryloyl group, and a group represented by the formula (A-3a). 1a and R 2a are each preferably independently represented by the following formula (A-3a): [ka] (In formula (A-3a), R 4b , R 5b and R 6b each independently represents a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms; a represents an integer of 0 to 10; * represents a bond.)

[0051] In formula (A-3a), R 4b ~R 6b each independently represents a hydrogen atom or an aliphatic hydrocarbon group having 1 to 3 carbon atoms; R 4a ~R 6a is the same as:

[0052] In formula (A-2), p a represents an integer of 0 to 10, preferably an integer of 0 to 5, more preferably an integer of 0 to 3, and even more preferably 0.

[0053] The component (A) preferably has a structural unit represented by the following formula (A-4a) or the following formula (A-4b). [ka] (In the formula (A-4a) and the formula (A-4b), A 2a each independently represents a tetravalent organic group; R 11 and R 12 each independently represents a hydrogen atom or a monovalent organic group; R 13 each independently represents a hydrogen atom or a methyl group, each Xa independently represents a single bond, a group represented by the following formula (a6-1) or a group represented by formula (a6-2), each Xb independently represents a single bond, a group represented by formula (a6-3) or a group represented by formula (a6-4), and m1 represents an integer of 1 to 5. [ka] (In formulas (a6-1) to (a6-4), * represents a bond.)

[0054] In formula (A-4a) and formula (A-4b), A 2a Each of A and B independently represents a tetravalent organic group. 2a is the same as A in formula (A-1).

[0055] In formula (A-4a) and formula (A-4b), R 11 and R 12 R each independently represents a hydrogen atom or a monovalent organic group. 11 and R 12 is R in formula (A-1) 1 and R 2 is the same as:

[0056] In formula (A-4a) and formula (A-4b), Xa each independently represents a single bond, a group represented by formula (a6-1), or a group represented by formula (a6-2). Examples of the group represented by formula (a6-1) include a 1,2-phenylene group, a 1,3-phenylene group, and a 1,4-phenylene group. Examples of the group represented by formula (a6-2) include the following groups (a6-2-1) to (a6-2-6). Among them, Xa is preferably a group represented by formula (a6-1), and more preferably a 1,4-phenylene group. In the following formulas, * represents a bond. [ka]

[0057] In formula (A-4a) and formula (A-4b), Xb each independently represents a single bond, a group represented by formula (a6-3), or a group represented by formula (a6-4). Examples of the group represented by formula (a6-3) include a 1,2-phenylene group, a 1,3-phenylene group, and a 1,4-phenylene group. Examples of the group represented by formula (a6-4) include the following groups (a6-4-1) to (a6-4-3). Among these, Xb is preferably a single bond. In the following formulas, * represents a bond. [ka]

[0058] In formula (A-4a) and formula (A-4b), R 13 each independently represents a hydrogen atom or a methyl group, and preferably represents a methyl group.

[0059] In formula (A-4a) and formula (A-4b), m 1 each independently represents an integer of 1 to 5, preferably an integer of 1 to 3, more preferably 2 or 3, and even more preferably 3.

[0060] The component (A) preferably has a structural unit represented by the following formula (A-5a) or the following formula (A-5b). [ka] (In the formula (A-5a) and the formula (A-5b), A 3a each independently represents a tetravalent organic group containing an aliphatic hydrocarbon group, R 1b and R 2b each independently represents a monovalent organic group containing an ethylenically unsaturated bond; R 13a each independently represents a hydrogen atom or a methyl group; 1 each independently represents a single bond, a group represented by the following formula (a7-1), or a group represented by the following formula (a7-2), 1 each independently represents a single bond, a group represented by formula (a7-3), or a group represented by formula (a7-4). m2 represents an integer of 1 to 5. [ka] (In formulas (a7-1) to (a7-4), * represents a bond.)

[0061] In formula (A-5a) and formula (A-5b), A 3a Each of A and B independently represents a tetravalent organic group. 3a is the same as A in formula (A-1).

[0062] In formula (A-5a) and formula (A-5b), R 1a and R 1b R each independently represents a monovalent organic group containing an ethylenically unsaturated bond. 1a and R 1b is R in formula (A-3) 1a and R 2a is the same as:

[0063] In formula (A-5a) and formula (A-5b), Xa 1 each independently represents a single bond, a group represented by formula (a6-1), or a group represented by formula (a6-2). 1 is the same as Xa in formulae (A-4a) and (A-4b).

[0064] In formula (A-5a) and formula (A-5b), Xb 1 each independently represents a single bond, a group represented by formula (a6-3), or a group represented by formula (a6-4). 1 is the same as Xb in formulae (A-4a) and (A-4b).

[0065] In formula (A-5a) and formula (A-5b), R 13a each independently represents a hydrogen atom or a methyl group, and preferably represents a methyl group.

[0066] In formula (A-5a) and formula (A-5b), m 2 each independently represents an integer of 1 to 5; 2 m in formula (A-4a) and formula (A-4b) 1 is the same as:

[0067] The component (A) preferably has a structural unit represented by the following formula (A-6a) or the following formula (A-6b). [ka] (In the formula (A-6a) and the formula (A-6b), A 4a each independently represents a tetravalent organic group containing an aliphatic hydrocarbon group, R 1c and R 2c each independently represents a monovalent organic group containing an ethylenically unsaturated bond.

[0068] In formula (A-6a) and formula (A-6b), A 4a Each of A and B independently represents a tetravalent organic group. 4a is the same as A in formula (A-1).

[0069] In formula (A-6a) and formula (A-6b), R 1c and R 1c R each independently represents a monovalent organic group containing an ethylenically unsaturated bond. 1c and R 1c is R in formula (A-3) 1a and R2a is the same as:

[0070] The polyimide precursor (A) may be a copolymer containing a structural unit having an indane skeleton and a structural unit not containing an indane skeleton. For example, in addition to the structural unit containing the indane skeleton represented by formula (A-1), it may contain a structural unit not containing the indane skeleton represented by formula (A-1). The polyimide precursor (A) may also be a copolymer having a plurality of different structural units represented by formula (A-1).

[0071] The polyimide precursor (A) may contain any structural unit other than the above-mentioned amic acid structural unit and amic acid ester structural unit. Thus, the polyimide precursor (A) may be a copolymer containing a structural unit represented by formula (A-1) and any structural unit. In particular, the polyimide precursor (A) preferably contains a large amount of amic acid structural units and amic acid ester structural units, and therefore, it is preferable that the amount of any structural unit is small. For example, the mass of the amic acid structural unit and the amic acid ester structural unit is preferably 50 mass% or more, more preferably 70 mass% or more, and even more preferably 90 mass% or more, based on the total mass of the polyimide precursor (100%). The polyimide precursor (A) may contain only the above-mentioned amic acid structural unit and / or amic acid ester structural unit as a repeating unit, or may not contain any structural unit. The amic acid structural unit and / or amic acid ester structural unit contained in the polyimide precursor (A) may be one type or two or more types.

[0072] The structural unit represented by formula (A-1) is particularly preferably represented by any one of the following formulae (a-1) to (a-27). Therefore, the polyimide precursor preferably contains one or more structural units selected from the group consisting of the structural units represented by the following formulae (a-1) to (a-27), and more preferably contains any one of the structural units represented by the following formulae (a-6) and (a-26). [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0073] The number of repetitions of the structural unit represented by formula (A-1) is usually 2 or more, preferably 5 to 200, more preferably 5 to 150, further preferably 5 to 100, and particularly preferably 5 to 70.

[0074] Specific examples of the polyimide precursor having a structural unit represented by formula (A-1) include compounds containing the following repeating units (Aa-1) to (Aa-27). However, the polyimide precursor having an amic acid ester structural unit represented by formula (A-1) is not limited to these specific examples. In the formula, n represents an integer of 5 to 200. [ka] [ka] [ka] [ka] [ka] [ka] [ka]

[0075] The component (A) can transmit ultraviolet light with high transmittance. In one example, the total light transmittance of a 60 μm-thick layer of the polyimide precursor at a wavelength of 365 nm is preferably 80% or more, more preferably 90% or more, and even more preferably 95% or more.

[0076] The method for producing the polyimide precursor (A) is not particularly limited. The polyimide precursor (A) may be produced, for example, by a method including reacting an aliphatic acid dianhydride with a diamine compound to obtain a polyamic acid, and reacting the polyamic acid with an epoxy compound containing an ethylenically unsaturated bond. As the aliphatic acid dianhydride, the diamine compound, and the epoxy compound containing an ethylenically unsaturated bond, for example, those described above may be used. For the method for producing the polyimide precursor, the methods described in Japanese Patent No. 3921734, Japanese Patent Application Publication No. 11-15152, Japanese Patent Application Publication No. 2015-209461, Japanese Patent Application Publication No. 2015-214680, Japanese Patent Application Publication No. 2017-219850, or Japanese Patent Application Publication No. 2018-146964 may be referred to.

[0077] From the viewpoint of limit resolution, the weight average molecular weight of the (A) component is preferably at least 5,000, more preferably at least 10,000, and is preferably at most 1,000,000, more preferably at most 500,000, and even more preferably at most 200,000. The weight average molecular weight of the resin can be measured as a polystyrene-equivalent value by gel permeation chromatography (GPC).

[0078] From the viewpoint of limiting resolution, the content of the component (A) is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably 30% by mass or more, 40% by mass or more, 50% by mass or more, 60% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass, and is preferably 99% by mass or less, more preferably 98% by mass or less, and even more preferably 97% by mass or less.

[0079] In the present invention, unless otherwise specified, the content of each component in the photosensitive resin composition is a value when the non-volatile components in the photosensitive resin composition are taken as 100 mass %, and the non-volatile components mean all non-volatile components in the photosensitive resin composition excluding the solvent.

[0080] <(B) Crosslinking agent having one ethylenically unsaturated bond> The photosensitive resin composition contains a crosslinking agent having one ethylenically unsaturated bond as the component (B). However, the component (B) does not include those corresponding to the component (A). Conventionally, when a developer is used to develop a photosensitive resin composition, the cured product of the photosensitive resin composition shrinks with the evaporation of the developer, which may cause cracks. However, the component (B) has only one ethylenically unsaturated bond that can contribute to a crosslinking reaction, so there are few crosslinking points, and therefore it has excellent flexibility. Therefore, when crosslinking progresses significantly due to a large amount of exposure, the stress during curing is relaxed by the stress relaxation effect of the component (B), and as a result, the occurrence of cracks is suppressed. On the other hand, when crosslinking progresses slightly due to a small amount of exposure, there is a possibility that the crosslinking of the component (B) does not progress significantly, but even in that case, the crosslinking of the component (C) having two or more ethylenically unsaturated bonds progresses, so that a sufficient amount of crosslinking points are generated in the composition, and mechanical strength is improved. In addition, with a small amount of exposure, not all of the crosslinking points of component (C) are crosslinked, and the crosslinked network does not become excessively dense, so that component (C) may exert a stress relaxation effect. Therefore, cracks can be suppressed in both cases where the exposure amount is large and small, making it possible to widen the process window. Component (B) may be used alone or in combination of two or more types.

[0081] (B) As a component, a compound having one ethylenically unsaturated bond can be used. Such a compound is preferably a compound having one group having an ethylenically unsaturated bond, more preferably a compound having one group having an ethylenically unsaturated bond and at least one of the carbon atoms at the α-position of the ethylenically unsaturated bond being bonded to either a carbonyl group or an aromatic group, and even more preferably a compound having one group having an ethylenically unsaturated bond and at least one of the carbon atoms at the α-position of the ethylenically unsaturated bond being bonded to a carbonyl group. Further, the (B) component may contain a functional group such as a carboxyl group in addition to the group having an ethylenically unsaturated bond. The carbon atom at the α-position of the ethylenically unsaturated bond refers to the first carbon atom adjacent to the carbon atom bonded by a carbon-carbon double bond. Also, the ethylenically unsaturated bond represents a non-aromatic carbon-carbon unsaturated bond as described above, and for example, represents a non-aromatic carbon-carbon double bond, a carbon-carbon triple bond, etc.

[0082] (B) From the viewpoint of significantly obtaining the effects of the present invention, the (B) component preferably contains one group having an ethylenically unsaturated bond.

[0083] The group having an ethylenically unsaturated bond is usually a monovalent group, and examples thereof include a vinyl group, an allyl group, a propargyl group, a propenyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimide group, a nadimide group, and a (meth)acryloyl group. From the viewpoint of obtaining a cured product excellent in crack resistance, a (meth)acryloyl group and a phenylethynyl group are preferable, a (meth)acryloyl group is more preferable, and an acryloyl group is particularly preferable. The “(meth)acryloyl group” includes a methacryloyl group, an acryloyl group, and combinations thereof.

[0084] From the viewpoint of obtaining a cured product having excellent crack resistance, the (B) component preferably contains a group having an ethylenically unsaturated bond and a carboxyl group or an aromatic ring, more preferably contains a group having an ethylenically unsaturated bond and a carboxyl group or an aromatic ring at the end, further preferably contains a (meth)acrylate containing a carboxyl group or an aromatic ring, and particularly preferably contains a (meth)acrylate containing a carboxyl group or an aromatic ring at the end. The aromatic ring is preferably an aryl group, and examples of the aryl group include a phenyl group, a naphthyl group, an anthracenyl group, etc., and a phenyl group is preferred. The term "(meth)acrylate" includes methacrylate, acrylate, and combinations thereof.

[0085] The (B) component has a group having an ethylenically unsaturated bond and a carboxyl group or an aromatic ring, and the group having an ethylenically unsaturated bond and the carboxyl group or the aromatic ring are preferably bonded via one or more groups selected from an oxygen atom, a carbonyl group, an alkylene group, and an alkyleneoxy group. The alkyleneoxy group refers to a group in which an alkylene group is bonded to an oxygen atom.

[0086] The alkylene group preferably has 1 to 10 carbon atoms, more preferably has 1 to 6 carbon atoms, and further preferably has 1 to 3 carbon atoms, and is particularly preferably an ethylene group.

[0087] The alkylene group may have a substituent. Examples of the substituent include linear, branched, or cyclic alkyl groups having 1 to 10 carbon atoms, such as methyl, ethyl, propyl, and n-butyl groups; halogen atoms, such as fluorine, chlorine, and bromine; alkoxy groups having 1 to 10 carbon atoms, such as methoxy, ethoxy, and propoxy; hydroxyl groups; and halogen-substituted alkyl groups, such as trifluoromethyl groups. These substituents may be bonded to form a ring. The above-mentioned substituents may further have a substituent (hereinafter sometimes referred to as "secondary substituent"). The number of the substituents may be one or more.

[0088] The alkyleneoxy group preferably has 1 to 10 carbon atoms, more preferably has 1 to 6 carbon atoms, and even more preferably has 1 to 3 carbon atoms, and is particularly preferably an ethyleneoxy group.

[0089] The alkyleneoxy group may have a substituent. The substituent is the same as the substituent that the alkylene group may have.

[0090] One or more groups selected from an oxygen atom, a carbonyl group, an alkylene group, and an alkyleneoxy group may be contained as a repeating unit. In this case, the number of repeating units is preferably 1 to 10, more preferably 1 to 6, and further preferably 1 to 3. The compound may have one repeating unit or multiple repeating units.

[0091] The component (B) is preferably either a compound represented by the following general formula (B-1) or a compound represented by the following general formula (B-2). [ka] In formula (B-1), R 1b represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; R 2b represents a carboxyl group or a phenyl group, X 1 and Y 1 each independently represents an alkylene group which may have a substituent, or an alkyleneoxy group which may have a substituent. In formula (B-2), R 3b represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; R 4b represents a carboxyl group or a phenyl group, X 2 and Y 2 each independently represents an alkylene group which may have a substituent, or an alkyleneoxy group which may have a substituent, and n represents an integer of 1 to 10.

[0092] In formula (B-1), R 1brepresents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. Examples of the linear or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a 1-butyl group, a s-butyl group, and a t-butyl group. Among these, R 1b is preferably a hydrogen atom or a methyl group.

[0093] In formula (B-1), X 1 and Y 1 each independently represents an alkylene group which may have a substituent, or an alkyleneoxy group which may have a substituent. The alkylene group may be a linear, branched, or cyclic alkylene group, and is preferably linear. The alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 1 to 6 carbon atoms, and even more preferably an alkylene group having 1 to 3 carbon atoms. Examples of such alkylene groups include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group, and an ethylene group is preferred.

[0094] The alkyleneoxy group may be a linear, branched, or cyclic alkyleneoxy group, and is preferably linear. The alkyleneoxy group is preferably an alkyleneoxy group having 1 to 10 carbon atoms, more preferably an alkyleneoxy group having 1 to 6 carbon atoms, and even more preferably an alkyleneoxy group having 1 to 3 carbon atoms. Examples of such alkyleneoxy groups include a methyleneoxy group, an ethyleneoxy group, a propyleneoxy group, a butyleneoxy group, a pentyleneoxy group, and a hexyleneoxy group, and is preferably an ethyleneoxy group.

[0095] The alkylene group and the alkyleneoxy group may have a substituent. The substituent is the same as the substituent that the alkylene group may have.

[0096] In formula (B-1), R 2b represents a carboxyl group or a phenyl group, and a carboxyl group is preferred.

[0097] In formula (B-2), R 3b represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; R 1b is the same as:

[0098] In formula (B-2), R 4b represents a carboxyl group or a phenyl group, and R in formula (B-1) 2b is the same as:

[0099] In formula (B-2), X 2 and Y 2 each independently represents an alkylene group which may have a substituent, or an alkyleneoxy group which may have a substituent; 1 and Y 1 is the same as:

[0100] n represents an integer of 1 to 10, more preferably an integer of 1 to 6, further preferably an integer of 1 to 3, and particularly preferably 1.

[0101] From the viewpoint of achieving the effects of the present invention more prominently, the component (B) preferably contains a compound represented by general formula (B-1).

[0102] Specific examples of the component (B) include the following compounds (BL-1) to (BL-3), although the component (B) is not limited thereto. [ka]

[0103] The component (B) may be a commercially available product. Commercially available products of component (B) include, for example, "FA-511AS", "FA-512AS", "FA-513AS", and "FA-BZA" manufactured by Hitachi Chemical Co., Ltd.; "β-CEA", "IBOA", and "ODA-N" manufactured by Daicel-Cytec Co., Ltd.; "Light Acrylate IB-XA", "Light Acrylate IAA", "Light Acrylate LA", "Light Acrylate SA", "Light Acrylate EC-A", "Light Acrylate MTG-A", "Light Acrylate EHDG-AT", "Light Acrylate 130A", "Light Acrylate DPM-A", "Light Acrylate PO-A", "Light Acrylate P2H-A", "Light Acrylate P-200A", "Light Acrylate NP-4EA", "Light Acrylate THF-A", "Light Ester HOA (N)", "Light Ester HOP-A (N)", "Light Acrylate HOB-A", "Epoxy Ester M-600A", and "HOA-MS (N)" manufactured by Kyoei Chemical Co., Ltd. "Light Acrylate HOA-HH(N)", "HOA-MPL(N)", "HOA-MPE(N)", "Light Acrylate BA-104", "Light Acrylate P-1A(N)"; "A-LEN-10", "AM-90G", "AMP-20GY", "A-SA", "S-1800A" manufactured by Shin-Nakamura Chemical Co., Ltd.; "Aronix M-101A", "Aronix M-106", "Aronix M-110", "Aronix M-111", "Aronix M-120" manufactured by Toagosei Co., Ltd. Examples of such compounds include "Axus M-120", "Aronix M-140", "Aronix M-5300", "Aronix M-5400", and "Aronix M-5700" manufactured by Hitachi Chemical Co., Ltd.; "FA-512M", "FA-513M", "FA-711MM", "FA-712HM", and "FA-BZM" manufactured by Hitachi Chemical Co., Ltd.; "Light Ester G-201P" manufactured by Kyoei Chemical Co., Ltd.; "CB-1", "PHE-1G", "S", and "SA" manufactured by Shin-Nakamura Chemical Co., Ltd.; and "Cyclomer M100" manufactured by Daicel Corporation.

[0104] In order to obtain the effects of the present invention prominently, the content of the (B) component is preferably 0.01 part by mass or more, more preferably 0.5 part by mass or more, and even more preferably 0.8 part by mass or more, per 100 parts by mass of the (A) component, and is preferably 15 parts by mass or less, more preferably 10 parts by mass or less, and even more preferably 8 parts by mass or less.

[0105] From the viewpoint of significantly obtaining the effects of the present invention, the content of the component (B) is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and even more preferably 0.08% by mass or more, when the non-volatile components of the photosensitive resin composition are taken as 100% by mass, and is preferably 10% by mass or less, more preferably 8% by mass or less, and even more preferably 5% by mass or less.

[0106] When the content of the (A) component when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass is a and the content of the (B) component when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass is b, from the viewpoint of significantly obtaining the effects of the present invention, b / a is preferably 0.001 or more, more preferably 0.005 or more, even more preferably 0.008 or more, 0.01 or more, and is preferably 0.11 or less, more preferably 0.1 or less, even more preferably 0.08 or less, 0.07 or less, 0.06 or less, 0.05 or less.

[0107] <(C) Crosslinking agent having two or more ethylenically unsaturated bonds> The photosensitive resin composition contains a crosslinking agent having two or more ethylenically unsaturated bonds as component (C). However, the component (C) does not include components (A) to (B). When the photosensitive resin composition is irradiated with actinic rays and radicals are generated from the photoradical generator, a crosslinking reaction of component (C) occurs, and the composition becomes insoluble in the developer. Therefore, during development, the photosensitive resin composition can be selectively removed from areas other than those where the crosslinking reaction has progressed, and a negative pattern can be advantageously formed. The component (C) may be used alone or in combination of two or more.

[0108] As the component (C), a compound capable of undergoing a crosslinking reaction during development and having two or more ethylenically unsaturated bonds per molecule can be used. As such a compound, a compound having two or more ethylenically unsaturated bonds and in which at least one carbon atom at the α-position of the ethylenically unsaturated bond is bonded to a carbonyl group or an aromatic group is preferred.

[0109] From the viewpoint of obtaining the effects of the present invention more significantly, it is preferable that the (C) component contains two or more groups having an ethylenically unsaturated bond. The group having an ethylenically unsaturated bond is as described above. The two or more groups having an ethylenically unsaturated bond contained in the (C) component may be the same or different. In particular, it is preferable that the (C) component contains a (meth)acryloyl group.

[0110] The number of ethylenically unsaturated bonds in the component (C) is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6. Therefore, the component (C) preferably contains a di- or more and 20- or less functional (meth)acrylate, more preferably contains a di- or more and 10- or less functional (meth)acrylate, and even more preferably contains a di- or more and 6- or less functional (meth)acrylate.

[0111] The component (C) is preferably a compound represented by the following general formula (C-1). [ka] In the formula, R 1c each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; each independently represents a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, an arylene group which may contain an oxygen atom, or a linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom; A 1c represents a linear, cyclic or branched organic group having 1 to 10 carbon atoms and a valence of nc, where nc is a positive integer of 2 to 20.

[0112] R1c each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. Examples of the linear or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a 1-butyl group, a s-butyl group, and a t-butyl group. Among them, R 1c is preferably a hydrogen atom or a methyl group.

[0113] Z each independently represents a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, an arylene group which may contain an oxygen atom, or a linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom. As the linear or branched alkylene group having 1 to 20 carbon atoms, a linear or branched alkylene group having 1 to 10 carbon atoms is preferred, and a linear or branched alkylene group having 1 to 6 carbon atoms is more preferred. Examples of such alkylene groups include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group, and a methylene group is preferred. The alkylene group may also be an oxyalkylene group containing an oxygen atom, and specific examples of such groups include, for example, those shown below. In the formula, "*" represents a bond, c1 represents an integer of 1 to 20, c2 represents an integer of 1 to 10, c3 represents an integer of 1 to 19, and c4 represents an integer of 1 to 9. [ka]

[0114] The arylene group which may contain an oxygen atom is preferably an arylene group having 6 to 20 carbon atoms, more preferably an arylene group having 6 to 15 carbon atoms, and even more preferably an arylene group having 6 to 10 carbon atoms. Examples of such an arylene group include a phenylene group and a naphthylene group. The arylene group may also contain an oxygen atom, and specific examples of such groups include those shown below. In the formula, "*" represents a bond, and c5 represents an integer of 1 to 3. [ka]

[0115] As the linear or branched alkenylene group having 2 to 20 carbon atoms which may contain an oxygen atom, a linear or branched alkenylene group having 2 to 10 carbon atoms is preferred, and a linear or branched alkenylene group having 2 to 6 carbon atoms is more preferred. Examples of such an alkenylene group include an ethenylene group, a propenylene group, a butenylene group, a pentenylene group, and a hexenylene group. The alkenylene group may also be an oxyalkenylene group containing an oxygen atom, and specific examples of such groups include the following. In the formula, "*" represents a bond, and c6 represents an integer of 1 to 10. The alkenylene group is preferably a propenylene group. [ka]

[0116] Among these, Z is preferably a linear or branched alkylene group having 1 to 20 carbon atoms which may contain an oxygen atom, and more preferably an oxyalkylene group or a methylene group.

[0117] A 1c represents a linear, cyclic or branched nc-valent organic group having 1 to 10 carbon atoms. Examples of the nc-valent organic group include an nc-valent hydrocarbon group which may contain an oxygen atom, an nc-valent group derived from bisphenol, an nc-valent group derived from fluorene, an nc-valent group derived from tricyclodecane, or an nc-valent group derived from an isocyanuric group. Examples of the nc-valent hydrocarbon group which may contain an oxygen atom include an nc-valent aliphatic hydrocarbon group which may contain an oxygen atom, and an nc-valent aromatic hydrocarbon group which may contain an oxygen atom. An nc-valent aliphatic hydrocarbon group which may contain an oxygen atom is preferred, and when nc is 2, for example, an alkylene group is preferred. A 1c Specific examples of the group represented by include the following: In the formula, "*" represents a bond. [ka]

[0118] nc represents a positive integer of 2 to 20, preferably a positive integer of 2 to 15, more preferably a positive integer of 2 to 12, even more preferably a positive integer of 2 to 10, 2 to 8, or 2 to 6, and even more preferably 3 or 4, or 2 or 3.

[0119] The component (C) may be a compound represented by the following formula (C-2). [ka] In formula (C-2), R 2c each independently represents a hydrogen atom or a methyl group.

[0120] R 2c each independently represents a hydrogen atom or a methyl group, and a methyl group is preferable.

[0121] Specific examples of the component (C) include dipentaerythritol hexaacrylate, dipentaerythritol tetraacrylate, and the like, as well as the following compounds (CL-1) to (CL-11). However, the component (C) is not limited to these. In the formula, n is the same as nc in formula (C-1). [ka] [ka]

[0122] The component (C) may be a commercially available product. Examples of commercially available products include NK Ester-D-TMP, 4G, 9G, 14G, 23G, DCP, TMPT, A-TMPT, and A-NOD-N (1,9-nonanediol diacrylate) manufactured by Shin-Nakamura Chemical Co., Ltd.; SR209 manufactured by Tomoe Engineering Co., Ltd.; M-940 and M-933 manufactured by Toagosei Co., Ltd.; DPHA (dipentaerythritol hexaacrylate) manufactured by Nippon Kayaku Co., Ltd.; and CN2301 and CN2304 manufactured by Sartomer Japan Co., Ltd.

[0123] In order to obtain the effects of the present invention prominently, the content of the (C) component is preferably 0.1 part by mass or more, more preferably 1 part by mass or more, and even more preferably 2 parts by mass or more, per 100 parts by mass of the (A) component, and is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, and even more preferably 10 parts by mass or less.

[0124] From the viewpoint of obtaining the effects of the present invention prominently, the content of the component (C) is preferably 1 mass % or more, more preferably 0.5 mass % or more, and even more preferably 2 mass % or more, and is preferably 15 mass % or less, more preferably 10 mass % or less, and even more preferably 7 mass % or less, when the non-volatile components of the photosensitive resin composition are taken as 100 mass %.

[0125] When the content of the (B) component when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass is b and the content of the (C) component when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass is c, from the viewpoint of significantly obtaining the effects of the present invention, b / c is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more, and is preferably 1.1 or less, more preferably 1 or less, and even more preferably 0.8 or less, 0.7 or less, 0.6 or less, 0.5 or less, or 0.4 or less.

[0126] <(D) Photoradical generator> The photosensitive resin composition contains a photoradical generator (D) as the component (D). The component (D) generates radicals when irradiated with actinic rays, and the radicals can cause a crosslinking reaction. In the photosensitive resin composition, the part where the crosslinking reaction occurs due to the radicals is cured to become a cured product, and the resistance to the developer is improved. Therefore, during development, it becomes possible to selectively remove the photosensitive resin composition from the part other than the part where the crosslinking reaction has progressed, and a negative pattern can be advantageously formed. The component (D) may be used alone or in combination of two or more kinds. In addition, the component (D) does not include those corresponding to the components (A) to (C).

[0127] Examples of the component (D) include benzophenone, methyl o-benzoylbenzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, fluorenone and other benzophenone derivatives, 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 1-hydroxycyclohexyl phenyl ketone and other acetophenone derivatives, thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, diethylthioxanthone and other thioxanthone derivatives; benzil, benzil dimethyl ketal, benzyl-β-methoxyethyl acetal and other benzyl derivatives; benzoin, benzoin methyl ether and other benzoin derivatives; 1-phenyl-1,2-butanedione-2-(o-methoxycarbonyl)oxy Examples of the photoradical generators include photoradical generators containing an oxime ester structure such as 1-phenyl-1,2-propanedione-2-(o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(o-ethoxycarbonyl)oxime, and 1-phenyl-3-ethoxypropanetrione-2-(o-benzoyl)oxime; N-arylglycines such as N-phenylglycine; peroxide-based photoradical generators such as benzoyl perchloride; aromatic biimidazoles; titanocenes; α-(n-octanesulfonyloxyimino)-4-methoxybenzyl cyanide; and the like. Among these, photoradical generators containing an oxime ester structure are preferred as the component (D) from the viewpoint of photosensitivity.

[0128] The component (D) may be a commercially available product, such as "Irgacure-OXE02" or "Irgacure-OXE04" manufactured by BASF.

[0129] From the viewpoint of limiting resolution, the content of the (D) component, per 100 parts by mass of the (A) component, is preferably 0.1 part by mass or more, more preferably 0.3 part by mass or more, even more preferably 0.5 part by mass or more, and is preferably 10 parts by mass or less, more preferably 5 parts by mass or less, and even more preferably 3 parts by mass or less.

[0130] From the viewpoint of limiting resolution, the content of the component (D) is preferably 0.1 mass % or more, more preferably 0.3 mass % or more, and even more preferably 0.5 mass % or more, when the non-volatile components of the photosensitive resin composition are taken as 100 mass %, and is preferably 10 mass % or less, more preferably 5 mass % or less, and even more preferably 3 mass % or less.

[0131] <(E) Other Additives> The photosensitive resin composition may further contain (E) other additives to the extent that the object of the present invention is not hindered. (E) Other additives include, for example, photoacid generators, sensitizers, adhesion aids, surfactants such as fluorine-based surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, and silicone-based surfactants, thermoplastic resins, colorants such as phthalocyanine blue, phthalocyanine green, iodine green, diazo yellow, crystal violet, titanium oxide, carbon black, and naphthalene black, polymerization inhibitors such as hydroquinone, phenothiazine, methylhydroquinone, hydroquinone monomethyl ether, catechol, and pyrogallol, thickeners such as bentone and montmorillonite, silicone-based, fluorine-based, and vinyl resin-based defoamers, flame retardants such as epoxy resins, antimony compounds, phosphorus-based compounds, aromatic condensed phosphate esters, and halogen-containing condensed phosphate esters, and thermosetting resins such as phenol-based curing agents and cyanate ester-based curing agents.

[0132] The photosensitive resin composition may contain a photoacid generator. However, from the viewpoint of limiting resolution, the content thereof is preferably 8% by mass or less, more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on 100% by mass of the component (A). It is particularly preferable that the composition is free of a photoacid generator.

[0133] <(F) Solvent> The photosensitive resin composition may contain an optional component (F) solvent in combination with the non-volatile components (A) to (E) described above. The (F) solvent is preferably a volatile component capable of uniformly dissolving at least any one of the components (A) to (D) and the optional component (E).

[0134] Examples of such solvents include ether compounds having 2 to 9 carbon atoms, such as dimethyl ether, diethyl ether, methyl ethyl ether, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, and triethylene glycol dimethyl ether; ketone compounds having 2 to 6 carbon atoms, such as acetone and methyl ethyl ketone; saturated hydrocarbon compounds having 5 to 10 carbon atoms, such as normal pentane, cyclopentane, normal hexane, cyclohexane, methylcyclohexane, and decalin; benzene, tetrahydrofuran, dioxane, ethylene glycol dimethyl ether, triethylene glycol dimethyl ether, and triethylene glycol dimethyl ether. aromatic hydrocarbon compounds having 6 to 10 carbon atoms, such as benzene, xylene, mesitylene, and tetralin; ester compounds having 3 to 9 carbon atoms, such as methyl acetate, ethyl acetate, γ-butyrolactone, and methyl benzoate; halogen-containing compounds having 1 to 10 carbon atoms, such as chloroform, methylene chloride, and 1,2-dichloroethane; nitrogen-containing compounds having 2 to 10 carbon atoms, such as acetonitrile, N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; and sulfur-containing compounds, such as dimethyl sulfoxide.

[0135] Examples of the (F) component include N-ethyl-2-pyrrolidone, tetrahydrofuran, N,N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphoramide, pyridine, cyclopentanone, α-acetyl-γ-butyrolactone, tetramethylurea, 1,3-dimethyl-2-imidazolinone, N-cyclohexyl-2-pyrrolidone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl ethyl ketone, methyl isobutyl ketone, anisole, ethyl acetate, ethyl lactate, and butyl lactate. The (F) component may be used alone or in combination of two or more.

[0136] The content of the (F) component is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably 30% by mass or more, and preferably 99% by mass or less, more preferably 97% by mass or less, and even more preferably 95% by mass or less, when the entire photosensitive resin composition including the component (F) is taken as 100% by mass. The content of the (F) component in the photosensitive resin composition layer of the photosensitive film is preferably 1% by mass or more, more preferably 2% by mass or more, even more preferably 3% by mass or more, and preferably 40% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less, when the entire photosensitive resin composition including the component (F) is taken as 100% by mass.

[0137] The photosensitive resin composition can be produced by mixing the above-mentioned components (A) to (D) as essential components, appropriately mixing the above-mentioned components (E) to (F) as optional components, and kneading or stirring, as necessary, with kneading means such as a triple roll mill, a ball mill, a bead mill, or a sand mill, or with stirring means such as a super mixer or a planetary mixer.

[0138] <Properties and applications of photosensitive resin compositions> The cured product of the photosensitive resin composition exhibits the property of suppressing the occurrence of cracks in the vias. In addition, since the cured product of the photosensitive resin composition has a wide process window, it exhibits the property of being able to exert an effect of suppressing cracks over a wide range of exposure doses even when the exposure dose is changed. For example, when a mask is used that draws a circular hole with an opening diameter of 20 μm in the exposure pattern, and the exposure dose is set to 50 mJ / cm 2 , 100mJ / cm 2 , 200mJ / cm 2 , and 300 mJ / cm 2 The range is set to each of the above, and development is performed. In this case, the number of cracks occurring in the via is preferably 3 or less, more preferably 2 or less, and even more preferably 1 or less, or no cracks occur. The evaluation of the cracks in the via can be measured according to the method described in the examples below.

[0139] A cured product obtained by thermally curing the photosensitive resin composition at 200°C for 2 hours exhibits the characteristic of having a low dielectric constant (Dk). The dielectric constant at 23°C is preferably 5 or less, more preferably 4 or less, and even more preferably 3 or less. The lower limit is not particularly limited, but may be 1 or more. The dielectric constant can be measured according to the method described in the examples below.

[0140] The photosensitive resin composition is thermally cured at 200° C. for 2 hours to obtain a cured product with a low dielectric loss tangent (Df). The dielectric loss tangent at 23° C. is preferably 0.1 or less, more preferably 0.05 or less, and even more preferably 0.03 or less. The lower limit is not particularly limited, but may be 0.0001 or more. The dielectric loss tangent can be measured according to the method described in the examples below.

[0141] The photosensitive resin composition of the present invention is not particularly limited in its application, but it can be used in a wide range of applications in which photosensitive resin compositions are used, such as photosensitive films, insulating resin sheets such as prepregs, silicon wafers, circuit boards (for laminates, multilayer printed wiring boards, etc.), solder resists, buffer coat films, underfill materials, die bonding materials, semiconductor encapsulants, hole-filling resins, and component-embedding resins. Among them, the photosensitive resin composition can be used in a wide range of applications in which photosensitive resin compositions are used, such as a photosensitive resin composition for insulating layers of printed wiring boards (printed wiring boards in which a cured product of a photosensitive resin composition is used as an insulating layer), a photosensitive resin composition for interlayer insulating layers (printed wiring boards in which a cured product of a photosensitive resin composition is used as an interlayer insulating layer), a photosensitive resin composition for plating (printed wiring boards in which plating is formed on a cured product of a photosensitive resin composition), and a photosensitive resin composition for solder resists (printed wiring boards in which a cured product of a photosensitive resin composition is used as a solder resist), a photosensitive resin composition for rewiring formation layers of wafer-level packages (wafer-level packages in which a cured product of a photosensitive resin composition is used as a rewiring formation layer), The photosensitive resin composition can be suitably used as a photosensitive resin composition for a rewiring formation layer in a fan-out wafer-level package (a fan-out wafer-level package in which a cured product of the photosensitive resin composition serves as a rewiring formation layer), a photosensitive resin composition for a rewiring formation layer in a fan-out panel-level package (a fan-out panel-level package in which a cured product of the photosensitive resin composition serves as a rewiring formation layer), a photosensitive resin composition for a buffer coat (a semiconductor device in which a cured product of the photosensitive resin composition serves as a buffer coat), or a photosensitive resin composition for an insulating layer for a display (a display in which a cured product of the photosensitive resin composition serves as an insulating layer).

[0142] [Photosensitive film] The photosensitive resin composition of the present invention can be applied to a photosensitive film. The photosensitive film can include a support and a photosensitive resin composition layer formed on the support. The photosensitive resin composition layer is a layer made of the above-mentioned photosensitive resin composition. The photosensitive film may also include a support, a photosensitive resin composition layer, and a protective film in this order.

[0143] Examples of the support include a polyethylene terephthalate film, a polyethylene naphthalate film, a polypropylene film, a polyethylene film, a polyvinyl alcohol film, a triacetyl acetate film, and the like, with a polyethylene terephthalate film being particularly preferred.

[0144] Examples of commercially available supports include, but are not limited to, polypropylene films such as those manufactured by Oji Paper under the product names "Alphan MA-410" and "E-200C," those manufactured by Tamapoly under the product names "GF-1" and "GF-8," those manufactured by Shin-Etsu Film, and those manufactured by Teijin under the product name "PS-25" and other polyethylene terephthalate films in the PS series. These supports are preferably coated on the surface with a release agent such as a silicone coating agent or a non-silicone coating agent in order to facilitate removal. Examples of supports whose surfaces have been treated with such release agents include "AL-5" manufactured by Lintec. The thickness of the support is preferably in the range of 5 μm to 100 μm, and more preferably in the range of 10 μm to 50 μm.

[0145] The thickness of the photosensitive resin composition layer is not particularly limited and may be, for example, 1 μm or more and 100 μm or less. In particular, it is preferably 2 μm or more, more preferably 4 μm or more, and is preferably 50 μm or less, more preferably 30 μm or less.

[0146] The photosensitive resin composition layer may be protected by a protective film. By protecting the photosensitive resin composition layer with a protective film, adhesion of dust and scratches on the surface of the photosensitive resin composition layer can be suppressed. As the protective film, for example, a film made of the same material as the above-mentioned support can be used. The thickness of the protective film is not particularly limited, but is preferably in the range of 1 μm to 40 μm, more preferably in the range of 5 μm to 30 μm, and further preferably in the range of 10 μm to 30 μm. It is preferable that the adhesive strength between the photosensitive resin composition layer and the protective film is smaller than the adhesive strength between the photosensitive resin composition layer and the support.

[0147] The photosensitive film can be produced, for example, by applying the photosensitive resin composition onto a support and, if necessary, drying off the (F) solvent.

[0148] [Semiconductor package substrate] The semiconductor package substrate of the present invention includes an insulating layer formed from a cured product of the photosensitive resin composition of the present invention. The insulating layer is preferably used as a rewiring layer, an interlayer insulating layer, a buffer coat film, or a solder resist.

[0149] In detail, the semiconductor package substrate of the first embodiment of the present invention can be manufactured using the above-mentioned photosensitive resin composition, and the cured product of the photosensitive resin composition is used as an insulating layer. (I) forming a photosensitive resin composition layer containing the photosensitive resin composition of the present invention on a circuit board; (II) a step of irradiating the photosensitive resin composition layer with actinic rays; and (III) developing the photosensitive resin composition layer; Includes, in this order.

[0150] <Process (I)> Methods for forming the photosensitive resin composition layer include a method in which a resin varnish containing the photosensitive resin composition is directly applied onto the circuit board, and a method in which the above-mentioned photosensitive film is used.

[0151] When a resin varnish containing a photosensitive resin composition is directly applied onto a circuit board, the component (G) is dried and volatilized to form a photosensitive resin composition layer on the circuit board.

[0152] Examples of methods for applying resin varnish include gravure coating, microgravure coating, reverse coating, kiss reverse coating, die coating, slot die, lip coating, comma coating, blade coating, roll coating, knife coating, curtain coating, chamber gravure coating, slot orifice, spin coating, slit coating, spray coating, dip coating, hot melt coating, bar coating, applicator, air knife coating, curtain flow coating, offset printing, brush coating, and full-surface printing using screen printing.

[0153] The resin varnish may be applied in several steps, may be applied in one step, or may be applied by combining a plurality of different methods. Among them, the die coating method is preferable because of its excellent uniformity of application. In addition, in order to avoid contamination by foreign matter, it is preferable to carry out the application process in an environment where foreign matter is unlikely to be generated, such as a clean room.

[0154] After the resin varnish is applied, it is dried, if necessary, in a hot air oven or far-infrared oven, etc. The drying conditions are preferably 80° C. to 120° C. for 3 minutes to 13 minutes. In this manner, a photosensitive resin composition layer is formed on the circuit board.

[0155] Examples of the circuit board include a glass epoxy board, a metal board, a polyester board, a polyimide board, a BT resin board, and a thermosetting polyphenylene ether board. The circuit board here refers to a board in which a patterned conductor layer (circuit) is formed on one or both sides of the support board as described above. In addition, in a multilayer printed wiring board formed by alternately laminating a conductor layer and an insulating layer, a board in which one or both sides of the outermost layer of the multilayer printed wiring board are patterned conductor layers (circuits) is also included in the circuit board referred to here. The surface of the conductor layer may be previously roughened by blackening, copper etching, or the like.

[0156] On the other hand, when a photosensitive film is used, the photosensitive resin composition layer side is laminated on one or both sides of the circuit board using a vacuum laminator. In the lamination process, if the photosensitive film has a protective film, the protective film is removed, and then the photosensitive film and the circuit board are preheated as necessary, and the photosensitive resin composition layer is pressure-bonded to the circuit board while being pressurized and heated. For the photosensitive film, a method of laminating the film to the circuit board under reduced pressure by a vacuum lamination method is preferably used.

[0157] The lamination conditions are not particularly limited, but for example, the pressure bonding temperature (lamination temperature) is preferably 70° C. to 140° C., and the pressure bonding pressure is preferably 1 kgf / cm. 2 ~11kgf / cm 2 (9.8×10 4 N / m 2 ~107.9×10 4 N / m 2 ), the pressure bonding time is preferably 5 seconds to 300 seconds, and lamination is preferably performed under reduced pressure with an air pressure of 20 mmHg (26.7 hPa) or less. The lamination process may be a batch process or a continuous process using rolls. The vacuum lamination method can be performed using a commercially available vacuum laminator. Examples of commercially available vacuum laminators include a vacuum applicator manufactured by Nikko Materials Co., Ltd., a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a roll-type dry coater manufactured by Hitachi Industries Co., Ltd., and a vacuum laminator manufactured by Hitachi AIC Co., Ltd.

[0158] <Process (II)> After the photosensitive resin composition layer is provided on the circuit board, an exposure step is then performed in which a predetermined portion of the photosensitive resin composition layer is irradiated with active light through a mask pattern. Examples of active light include ultraviolet light, visible light, electron beams, and X-rays, and ultraviolet light is particularly preferred. The irradiation dose of ultraviolet light is approximately 10 mJ / cm. 2 ~1000mJ / cm 2There are two types of exposure methods: contact exposure, in which a mask pattern is brought into close contact with the circuit board, and non-contact exposure, in which parallel light is used for exposure without contact, and either method may be used.

[0159] In step (II), vias can be formed using a via pattern such as a round hole pattern as a mask pattern. The via diameter (opening diameter) is preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 30 μm or less. The lower limit is not particularly limited, but may be 0.1 μm or more, 0.5 μm or more, etc.

[0160] <Process (III)> After the exposure step, a development step is carried out in which the unexposed portions of the photosensitive resin composition layer are removed with a developer, thereby forming a pattern. The development is usually carried out by wet development.

[0161] In the case of the wet development, a developer that is safe, stable, and easy to operate is used, such as an alkaline solution, an aqueous developer, an organic solvent, etc. As a developing method, a known method such as spraying, swing immersion, brushing, scraping, etc. is appropriately adopted.

[0162] Examples of alkaline aqueous solutions used as the developer include aqueous solutions of alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; carbonates or bicarbonates such as sodium carbonate and sodium bicarbonate; alkali metal phosphates such as sodium phosphate and potassium phosphate; and alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; and aqueous solutions of organic bases that do not contain metal ions, such as tetraalkylammonium hydroxide. An aqueous solution of tetramethylammonium hydroxide (TMAH) is preferred because it does not contain metal ions and does not affect the semiconductor chip.

[0163] These alkaline aqueous solutions may contain a surfactant, an antifoaming agent, etc., to improve the development effect. The pH of the alkaline aqueous solution is, for example, preferably in the range of 8 to 12, more preferably in the range of 9 to 11. The base concentration of the alkaline aqueous solution is preferably 0.1% by mass to 10% by mass. The temperature of the alkaline aqueous solution can be appropriately selected according to the developability of the photosensitive resin composition layer, but is preferably 20°C to 50°C.

[0164] Examples of organic solvents used as developers include acetone, ethyl acetate, alkoxyethanols having an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, cyclopentanone, and cyclohexanone.

[0165] The concentration of such an organic solvent is preferably 2% by mass to 90% by mass based on the total amount of the developer. The temperature of such an organic solvent can be adjusted according to the developability. Furthermore, such an organic solvent can be used alone or in combination of two or more kinds. Examples of organic solvent-based developers used alone include 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone, and γ-butyrolactone.

[0166] In forming a pattern, two or more kinds of developing methods may be used in combination as necessary. The developing methods include a dip method, a bath method, a spray method, a high-pressure spray method, brushing, slapping, etc., and the high-pressure spray method is suitable for improving resolution. When adopting a spray method, the spray pressure is preferably 0.05 MPa to 0.3 MPa.

[0167] <Thermal curing (post-bake) process> After the above step (III) is completed, a thermal curing (post-baking) step is performed as necessary. Although the curing of the photosensitive resin composition layer may proceed in the above steps (I) to (III), the curing of the photosensitive resin composition can be further promoted by the thermal curing step to obtain an insulating layer having excellent mechanical strength. Examples of the post-baking step include a heating step using a clean oven. The atmosphere during thermal curing may be in air or in an inert gas atmosphere such as nitrogen. The heating conditions may be appropriately selected depending on the type and content of the resin component in the photosensitive resin composition, and are preferably selected in the range of 150°C to 250°C for 20 minutes to 180 minutes, and more preferably in the range of 160°C to 230°C for 30 minutes to 120 minutes.

[0168] <Other processes> The method for producing a semiconductor package substrate may further include a drilling step and a desmearing step after forming an insulating layer as a cured photosensitive resin composition layer. These steps may be carried out according to various methods used in the production of semiconductor package substrates and known to those skilled in the art.

[0169] After forming the insulating layer, if desired, a hole-making process is performed on the insulating layer formed on the circuit board to form via holes and through holes. The hole-making process can be performed by a known method such as a drill, a laser, or plasma, or by a combination of these methods as necessary, but a hole-making process using a laser such as a carbon dioxide laser or a YAG laser is preferred.

[0170] The desmear process is a process of performing a desmear treatment. Generally, resin residue (smear) adheres to the inside of the opening formed in the hole drilling process. Since such smear can cause poor electrical connection, a process of removing the smear (desmear treatment) is performed in this process.

[0171] The desmear treatment may be performed by a dry desmear treatment, a wet desmear treatment, or a combination thereof.

[0172] An example of the dry desmear treatment is a desmear treatment using plasma. The desmear treatment using plasma can be performed using a commercially available plasma desmear treatment device. Among the commercially available plasma desmear treatment devices, examples suitable for manufacturing semiconductor package substrates include a microwave plasma device manufactured by Nissin Co., Ltd. and an atmospheric pressure plasma etching device manufactured by Sekisui Chemical Co., Ltd.

[0173] The wet desmear treatment may be, for example, a desmear treatment using an oxidizing agent solution. When the desmear treatment is performed using an oxidizing agent solution, it is preferable to perform a swelling treatment using a swelling liquid, an oxidation treatment using an oxidizing agent solution, and a neutralization treatment using a neutralizing liquid in this order. Examples of the swelling liquid include "Swelling Dip Securigance P" and "Swelling Dip Securigance SBU" manufactured by Atotech Japan. The swelling treatment is preferably performed by immersing a substrate on which via holes or the like are formed in a swelling liquid heated to 60°C to 80°C for 5 to 10 minutes. The oxidizing agent solution is preferably an alkaline permanganate solution, and examples of the solution include a solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of sodium hydroxide. The oxidation treatment using an oxidizing agent solution is preferably performed by immersing a substrate after the swelling treatment in an oxidizing agent solution heated to 60°C to 80°C for 10 to 30 minutes. Commercially available alkaline permanganate aqueous solutions include, for example, "Concentrate Compact CP" and "Dosing Solution Securiganth P" manufactured by Atotech Japan. The neutralization treatment using a neutralizing solution is preferably carried out by immersing the substrate after the oxidation treatment in the neutralizing solution at 30°C to 50°C for 3 to 10 minutes. The neutralizing solution is preferably an acidic aqueous solution, and a commercially available product thereof is, for example, "Reduction Solution Securiganth P" manufactured by Atotech Japan.

[0174] When the dry desmear treatment and the wet desmear treatment are performed in combination, the dry desmear treatment may be performed first, or the wet desmear treatment may be performed first.

[0175] In the case where the insulating layer is formed as any of a redistribution layer, an interlayer insulating layer, and a solder resist, a hole drilling step and a desmearing step may be performed after the thermal curing step. In addition, in the manufacturing method of the semiconductor package substrate, a plating step may be further performed.

[0176] The plating process is a process of forming a conductor layer on an insulating layer. The conductor layer may be formed by sputtering after the insulating layer is formed, or may be formed by a combination of electroless plating and electrolytic plating, or a plating resist having a reverse pattern to the conductor layer may be formed by electroless plating alone. Subsequent pattern formation methods include, for example, subtractive methods and semi-additive methods known to those skilled in the art.

[0177] The semiconductor package substrate according to the second embodiment of the present invention can be manufactured using the above-mentioned photosensitive resin composition, and the cured product of the photosensitive resin composition is used as a rewiring formation layer. Specifically, the manufacturing method of the semiconductor package substrate includes: (A) a step of laminating a temporary fixing film on a substrate; (B) a step of temporarily fixing a semiconductor chip on a temporary fixing film; (C) forming an encapsulation layer on the semiconductor chip; (D) peeling the substrate and the temporary fixing film from the semiconductor chip; (E) a step of forming a rewiring formation layer as an insulating layer on the surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled off; (F) forming a rewiring layer as a conductor layer on the rewiring formation layer; and (G) forming a solder resist layer on the rewiring layer; The method for manufacturing the semiconductor chip package further comprises: (H) dicing the plurality of semiconductor chip packages into individual semiconductor chip packages; may also include

[0178] <Process (A)> Step (A) is a step of laminating a temporary fixing film on a substrate. The lamination conditions for the substrate and the temporary fixing film are not particularly limited, but for example, the pressure bonding temperature (lamination temperature) is preferably 70° C. to 140° C., and the pressure bonding pressure is preferably 1 kgf / cm. 2 ~11kgf / cm 2 The pressure bonding time is preferably 5 to 300 seconds, and lamination is preferably performed under reduced pressure with an air pressure of 20 mmHg or less. The lamination process may be a batch process or a continuous process using rolls. The vacuum lamination method can be performed using a commercially available vacuum laminator. Examples of commercially available vacuum laminators include a vacuum applicator manufactured by Nikko Materials Co., Ltd., a vacuum pressure laminator manufactured by Meiki Seisakusho Co., Ltd., a roll-type dry coater manufactured by Hitachi Industries Co., Ltd., and a vacuum laminator manufactured by Hitachi AIC Co., Ltd.

[0179] Examples of the substrate include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel (SPCC); substrates such as FR-4 substrates in which glass fibers are impregnated with epoxy resin or the like and then heat-cured; and substrates made of bismaleimide triazine resins such as BT resin.

[0180] The temporary fixing film may be made of any material that can be peeled off from the semiconductor chip and can temporarily fix the semiconductor chip. Commercially available products include "Riva Alpha" manufactured by Nitto Denko Corporation.

[0181] <Process (B)> Step (B) is a step of temporarily fixing the semiconductor chip on the temporary fixing film. The temporary fixing of the semiconductor chip can be performed using, for example, a device such as a flip chip bonder or a die bonder. The layout and number of the semiconductor chips can be appropriately set depending on the shape and size of the temporary fixing film, the number of semiconductor packages to be produced, etc. For example, the semiconductor chips may be temporarily fixed by arranging them in a matrix shape of multiple rows and multiple columns.

[0182] <Process (C)> Step (C) is a step of forming an encapsulating layer on the semiconductor chip. The encapsulating layer can be made of any material having insulating properties, and the above-mentioned photosensitive resin composition can be used. The encapsulating layer is usually formed by a method including a step of forming an encapsulating resin composition layer on the semiconductor chip and a step of thermally curing the resin composition layer to form the encapsulating layer.

[0183] The formation of the encapsulating resin composition layer is preferably carried out by a compression molding method, in which a semiconductor chip and an encapsulating resin composition are usually placed in a mold, and pressure and, if necessary, heat are applied to the encapsulating resin composition in the mold to form an encapsulating resin composition layer that covers the semiconductor chip.

[0184] A specific operation of the compression molding method can be, for example, as follows. An upper mold and a lower mold are prepared as molds for compression molding. An encapsulating resin composition is applied to the semiconductor chip temporarily fixed on the temporary fixing film as described above. The semiconductor chip to which the encapsulating resin composition is applied is attached to the lower mold together with the substrate and the temporary fixing film. Then, the upper mold and the lower mold are clamped, and heat and pressure are applied to the encapsulating resin composition to perform compression molding.

[0185] A specific operation of the compression molding method may be, for example, as follows. An upper mold and a lower mold are prepared as molds for compression molding. An encapsulating resin composition is placed on the lower mold. A semiconductor chip is attached to the upper mold together with a substrate and a temporary fixing film. Then, the upper mold and the lower mold are clamped together so that the encapsulating resin composition placed on the lower mold contacts the semiconductor chip attached to the upper mold, and heat and pressure are applied to perform compression molding.

[0186] The molding conditions vary depending on the composition of the encapsulating resin composition, and appropriate conditions can be adopted so that good encapsulation is achieved. For example, the temperature of the mold during molding is preferably a temperature at which the encapsulating resin composition can exhibit excellent compression moldability, and is preferably 80°C or higher, more preferably 100°C or higher, particularly preferably 120°C or higher, and preferably 200°C or lower, more preferably 170°C or lower, and particularly preferably 150°C or lower. The pressure applied during molding is preferably 1 MPa or higher, more preferably 3 MPa or higher, particularly preferably 5 MPa or higher, and preferably 50 MPa or lower, more preferably 30 MPa or lower, and particularly preferably 20 MPa or lower. The cure time is preferably 1 minute or more, more preferably 2 minutes or more, particularly preferably 5 minutes or more, and preferably 60 minutes or lower, more preferably 30 minutes or lower, and particularly preferably 20 minutes or lower. Usually, the mold is removed after the encapsulating resin composition layer is formed. The mold may be removed before or after the encapsulating resin composition layer is thermally cured.

[0187] The compression molding method may be performed by discharging the encapsulating resin composition filled in a cartridge into a lower mold.

[0188] <Process (D)> Step (D) is a step of peeling off the substrate and the temporary fixing film from the semiconductor chip. It is desirable to adopt an appropriate peeling method according to the material of the temporary fixing film. For example, the peeling method may be a method of heating, foaming or expanding the temporary fixing film to peel it off. In addition, for example, the peeling method may be a method of irradiating the temporary fixing film with ultraviolet light through the substrate to reduce the adhesive strength of the temporary fixing film to peel it off.

[0189] In the method of peeling off the temporary fixing film by heating, foaming or expanding it, the heating conditions are usually 100° C. to 250° C. for 1 second to 90 seconds or 5 minutes to 15 minutes. In the method of peeling off the temporary fixing film by reducing the adhesive strength of the temporary fixing film by irradiating it with ultraviolet light, the irradiation amount of ultraviolet light is usually 10 mJ / cm 2 ~1000mJ / cm 2 It is.

[0190] <Process (E)> Step (E) is a step of forming a rewiring formation layer as an insulating layer on the surface of the semiconductor chip from which the base material and the temporary fixing film have been peeled off. The rewiring formation layer uses the photosensitive resin composition of the present invention. The method of forming the rewiring formation layer is the same as the method of forming the photosensitive resin composition layer in step (I) in the first embodiment.

[0191] When forming the rewiring formation layer, via holes may be formed in the rewiring formation layer to provide interlayer connection between the semiconductor chip and the rewiring layer.

[0192] The via hole can be formed by carrying out an exposure step of irradiating the surface of the photosensitive resin composition layer for forming the rewiring formation layer with active light through a mask pattern, and a development step of developing and removing the non-exposed portion not irradiated with active light. The amount and time of irradiation of active light can be appropriately set according to the photosensitive resin composition layer. Examples of the exposure method include a contact exposure method in which a mask pattern is closely attached to the photosensitive resin composition layer and exposed, and a non-contact exposure method in which a mask pattern is not closely attached to the photosensitive resin composition layer and exposed using parallel light. The active light, the alkaline aqueous solution, and the exposure and development method are as described above.

[0193] The shape of the via hole is not particularly limited, but is generally circular (approximately circular). The top diameter of the via hole is preferably 50 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less, and is preferably 0.1 μm or more, preferably 0.5 μm or more, and more preferably 1.0 μm or more. Here, the top diameter of the via hole refers to the diameter of the opening of the via hole on the surface of the rewiring formation layer.

[0194] <Process (F)> Step (F) is a step of forming a redistribution layer as a conductor layer on the redistribution formation layer. The method of forming the redistribution layer on the redistribution formation layer may be the same as the method of forming a conductor layer on an insulating layer in the first embodiment. Steps (E) and (F) may be repeated to alternately stack (build up) the redistribution layers and the redistribution formation layers.

[0195] <Process (G)> Step (G) is a step of forming a solder resist layer on the rewiring layer. The material of the solder resist layer can be any material having insulating properties. Among them, photosensitive resins and thermosetting resins are preferred from the viewpoint of ease of manufacturing the semiconductor chip package. The photosensitive resin composition of the present invention may also be used.

[0196] In step (G), bumping processing may be performed to form bumps, if necessary. The bumping processing can be performed by a method such as solder balls or solder plating. In addition, the formation of via holes in the bumping processing can be performed in the same manner as in step (E).

[0197] The method for manufacturing a semiconductor chip package may include a step (H) in addition to the steps (A) to (G). The step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages to separate them. The method for dicing the semiconductor chip packages into individual semiconductor chip packages is not particularly limited.

[0198] [Semiconductor Devices] Examples of semiconductor devices in which the above-mentioned semiconductor chip package is mounted include various semiconductor devices used in electrical products (e.g., computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical equipment, televisions, etc.) and vehicles (e.g., motorcycles, automobiles, trains, ships, aircraft, etc.). EXAMPLES

[0199] The present invention will be described in more detail below using examples, but the present invention is not limited to these examples. In the following description, unless otherwise specified, "parts" and "%" mean "parts by mass" and "% by mass", respectively.

[0200] [Synthesis Example 1: Synthesis of Polymer A-1] Under a nitrogen stream, 105.6 g of 5-(2,5-dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride (MCTC) and 500 g of gamma-butyrolactone were dissolved in a 1 L separable flask. 104.3 g of 1-(4-aminophenyl)-1,3,3-trimethylindanamine (PIDA) was added thereto and reacted at 50°C for 20 hours to obtain polyamic acid. 111.3 g of glycidyl methacrylate and 0.42 g of 4-methoxyphenol were added thereto and reacted at 50°C for 20 hours to obtain a solution of polymer A-1 (solid content 33%), which is a polyimide precursor. The molecular weight of polymer A-1 was measured by gel permeation chromatography (standard polystyrene equivalent) and found to have a weight average molecular weight (Mw) of 16,000. The structural unit of polymer A-1, which is a polyimide precursor, is shown below (n is an integer of 5 to 200). [ka]

[0201] [Synthesis Example 2: Synthesis of Polymer A-2] Under a nitrogen stream, 79.2 g of 1,2,3,4-butanetetracarboxylic dianhydride (BT-100) and 500 g of gamma-butyrolactone were dissolved in a 1 L separable flask. 104.3 g of 1-(4-aminophenyl)-1,3,3-trimethylindanamine (PIDA) was added thereto and reacted at 50°C for 20 hours to obtain polyamic acid. 111.3 g of glycidyl methacrylate (GMA) and 0.42 g of 4-methoxyphenol were added thereto and reacted at 50°C for 20 hours to obtain a solution of polyimide precursor A-2. The molecular weight of polyimide precursor A-2 was measured by gel permeation chromatography (standard polystyrene equivalent) and found to have a weight average molecular weight (Mw) of 14,000. [ka]

[0202] [Synthesis Example 3: Synthesis of Polymer A-3] Under a nitrogen stream, 120.0 g of 2-(3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthyl)succinic dianhydride (TDA-100) and 500 g of gamma-butyrolactone were dissolved in a 1 L separable flask. 104.3 g of 1-(4-aminophenyl)-1,3,3-trimethylindanamine (PIDA) was added thereto and reacted at 50°C for 20 hours to obtain polyamic acid. 153.7 g of 3,4-epoxycyclohexylmethyl methacrylate (Cyclomer M100) and 0.42 g of 4-methoxyphenol were added thereto and reacted at 50°C for 20 hours to obtain a solution of polyimide precursor A-3. The molecular weight of polyimide precursor A-3 was measured by gel permeation chromatography (standard polystyrene equivalent) and found to have a weight average molecular weight (Mw) of 16,000. [ka]

[0203] [Synthesis Example 4: Synthesis of Polymer A-4] 20.0 g (64.5 mmol) of oxydiphthalic dianhydride was suspended in 140 mL of diglyme while removing moisture in a dry reactor equipped with a stirrer, a condenser and a flat-bottom joint equipped with an internal thermometer. 16.8 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 0.05 g of purified water and 10.7 g (135 mmol) of pyridine were added successively and stirred at a temperature of 60° C. for 18 hours. The mixture was then cooled to −20° C., after which 16.1 g (135.5 mmol) of thionyl chloride was added dropwise over 90 minutes. A white precipitate of pyridinium hydrochloride was obtained. The mixture was then warmed to room temperature and stirred for 2 hours, after which 9.7 g (123 mmol) of pyridine and 25 mL of N-methylpyrrolidone (NMP) were added, obtaining a clear solution. Then, 11.8 g (58.7 mmol) of 4,4'-diaminodiphenyl ether dissolved in 100 mL of NMP was added dropwise to the resulting clear solution over 1 hour. Then, 5.6 g (17.5 mmol) of methanol and 0.05 g of 3,5-di-tert-butyl-4-hydroxytoluene were added, and the mixture was stirred for 2 hours. Then, the polyimide precursor polymer A-4 was precipitated in 4 liters of water, and the water-polyimide precursor resin mixture was stirred at a speed of 500 rpm for 15 minutes. The polymer A-4 was obtained by filtration, stirred again in 4 liters of water for 30 minutes, and filtered again. The obtained polymer A-4 was then dried under reduced pressure at 45°C for 3 days. The weight average molecular weight of the obtained polymer A-4 was 24,800, and the number average molecular weight was 10,500. The structural units of the polyimide precursor polymer A-4 are shown below. [ka]

[0204] <Examples 1 to 12 and Comparative Example 1: Preparation of Photosensitive Resin Composition> The reagents shown in Tables 1 and 2 below were mixed in the amounts (parts by mass) shown in each table and stirred using a high-speed rotating mixer to prepare a varnish-like photosensitive resin composition. Solutions (non-volatile content 30%) of the polymers A-1 to A-4 obtained in the above-mentioned Synthesis Examples 1 to 4 were prepared, respectively, and the solutions were used for mixing. [Table 1] [Table 2]

[0205] Details of each reagent in the table are as follows: Component (A) Synthesis Example 1: Polymer A-1 synthesized in Synthesis Example 1 Synthesis Example 2: Polymer A-2 synthesized in Synthesis Example 2 Synthesis Example 3: Polymer A-3 synthesized in Synthesis Example 3 Synthesis Example 4: Polymer A-3 synthesized in Synthesis Example 3 (B) Component A-SA: Monofunctional acrylate represented by the following formula, manufactured by Shin-Nakamura Chemical Co., Ltd. [ka] SA: Monofunctional acrylate represented by the following formula, manufactured by Shin-Nakamura Chemical Co., Ltd. [ka] PHE-1G: Monofunctional acrylate shown in the formula below, manufactured by Shin-Nakamura Chemical Co., Ltd. [ka] (C) Component Trifunctional methacrylate: (compound shown in the formula below, "TMPT" manufactured by Shin-Nakamura Chemical Co., Ltd.) [ka] Bifunctional acrylate: A-NOD-N (1,9-nonanediol diacrylate), manufactured by Shin-Nakamura Chemical Co., Ltd. Penta- and hexafunctional acrylate: DPHA: dipentaerythritol hexaacrylate, manufactured by Nippon Kayaku Co., Ltd. (D) Component · Irgacure OXE02: Oxime ester photoradical generator, photopolymerization initiator shown in the formula below (BASF "Irgacure OXE02") [ka] Irgacure OXE01: Oxime ester photoradical generator, photopolymerization initiator shown in the formula below (BASF "Irgacure OXE01") [ka]

[0206] <Preparation of photosensitive film> A PET film (Toray Industries, Inc., "Lumirror T6AM", thickness 38 μm) was prepared as a support. The photosensitive resin composition prepared in each Example and Comparative Example was uniformly applied to the PET film using a die coater so that the film thickness of the photosensitive resin composition layer after drying was 10 μm, and the film was dried at 80° C. to 120° C. for 6 minutes to form a photosensitive resin composition layer on the PET film. Next, a cover film (biaxially oriented polypropylene film, Oji F-Tex Co., Ltd., "MA-411") was placed on the surface of the photosensitive resin composition layer and laminated at 80° C. to produce a photosensitive film having a three-layer structure of support / photosensitive resin composition layer / cover film.

[0207] <Via crack evaluation> A copper plating was laminated on a silicon wafer with a thickness of 5 μm, and the substrate was roughened with a 1% hydrochloric acid aqueous solution for 60 seconds. The photosensitive resin composition layer of the photosensitive film was placed on the substrate so that it was in contact with the surface of the copper layer, and laminated using a vacuum laminator (VP160, manufactured by Nikko Materials Co., Ltd.) to form a laminate in which the copper plating, the photosensitive resin composition layer, and the support were laminated in this order. The pressure bonding conditions were a vacuum drawing time of 30 seconds, a pressure bonding temperature of 60°C, a pressure bonding pressure of 0.7 MPa, and a pressure application time of 30 seconds. After leaving the laminate at room temperature for 30 minutes, the support was peeled off. The laminate from which the support had been peeled off was exposed to ultraviolet light (wavelength 365 nm, intensity 40 mW / cm2). 2 The exposure was 50 mJ / cm 2The range was set. A quartz glass mask was used for the exposure pattern, which drew round holes (vias) with an opening diameter of 20 μm. After leaving the laminate at room temperature for 5 minutes, heat treatment was performed at 100° C. for 3 minutes. The entire surface of the photosensitive resin composition layer on the laminate was spray-developed with cyclopentanone at 23° C. as a developer at a spray pressure of 0.1 MPa for an optimal time between 30 and 100 seconds, and then spray-rinsed with propylene glycol monomethyl ether acetate at a spray pressure of 0.1 MPa for 30 seconds. The photosensitive resin composition layer was further cured by heat treatment at 200° C. for 180 minutes. Ten vias were observed with an SEM (magnification 1000 times) to confirm the presence or absence of cracks in the vias. Evaluation was performed according to the following evaluation criteria. O: 0 to 1 via with cracks. △: 2 to 3 vias with cracks. ×: 4 or more vias with cracks.

[0208] The exposure dose was 100 mJ / cm 2 , 200mJ / cm 2 , and 300 mJ / cm 2 The same evaluation was performed for the case where the range was set to .

[0209] <Measurement of dielectric properties (dielectric constant, dielectric tangent)> The dielectric properties were measured by coating the photosensitive resin composition on a peel-treated PET film with a blade to a film thickness of 140 μm. The solution on the PET film was heated at 80° C. for 15 minutes using a heater to form a photosensitive film having a photosensitive resin composition layer. The photosensitive resin composition layer was peeled off from the PET film, and the photosensitive resin composition layer was attached to a metal frame using heat-resistant tape, and cured at 200° C. for 2 hours to prepare a film for measuring physical properties.

[0210] A test piece measuring 2 mm in width and 80 mm in length was cut out from the film for measuring physical properties. The dielectric constant and dielectric loss tangent of the cut out test piece were measured at a measurement frequency of 5.8 GHz and a measurement temperature of 23°C by a cavity resonance perturbation method using a measuring device "HP8362B" manufactured by Agilent Technologies.

[0211]

Table 3

Table 4

Claims

1. (A) a polyimide precursor; (B) a crosslinking agent having one ethylenically unsaturated bond; (C) a crosslinking agent having two or more ethylenically unsaturated bonds, and (D) a photosensitive resin composition containing a photoradical generator.

2. 2. The photosensitive resin composition according to claim 1, wherein the component (A) comprises a polyimide precursor containing an indane skeleton.

3. The photosensitive resin composition according to claim 1 , wherein the component (B) comprises a (meth)acrylate containing a carboxyl group or an aromatic ring.

4. The photosensitive resin composition according to claim 1 , wherein the component (C) comprises a di- to hexa-functional (meth)acrylate.

5. The photosensitive resin composition according to claim 1 , wherein the component (D) has an oxime ester structure.

6. 2. The photosensitive resin composition according to claim 1, wherein a is the content of the component (A) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass, and b is the content of the component (B) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass, and b / a is 0.001 or more and 0.11 or less.

7. 2. The photosensitive resin composition according to claim 1, wherein a is the content of the component (B) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass, and b is the content of the component (C) when the nonvolatile components of the photosensitive resin composition are taken as 100% by mass, and b / c is 0.1 or more and 1.1 or less.

8. A photosensitive film comprising a support and a photosensitive resin composition layer formed on the support, the photosensitive resin composition layer comprising the photosensitive resin composition according to any one of claims 1 to 7.

9. A semiconductor package substrate comprising an insulating layer formed from a cured product of the photosensitive resin composition according to any one of claims 1 to 7.

10. A semiconductor device comprising the semiconductor package substrate according to claim 9 .

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