Substrate processing method and substrate processing system

Abstract

To provide a substrate processing method capable of improving productivity, and provide a substrate processing system.SOLUTION: The present invention provides a substrate processing method containing the steps of: (A) preparing a substrate having an electrode array in which a plurality of electrodes is arranged onto a substrate front surface; (B) forming a sealing lamination body having three or more layers of a first sealing layer, a second sealing layer, and a third sealing layer that are laminated in this order to a whole electrode array, and so that an etching rate of the second sealing layer becomes higher than the etching rate of the third sealing layer; (C) of forming a mask onto the sealing layer to which one type of the electrodes from the plurality of electrodes is not arranged; (D) forming an umbrella shape to an end part of the third sealing layer against an open part so that one type of the electrodes is exposed by etching the substrate by using the mask; and (E) of forming a light emitting layer and an electrode layer to all of the electrode arrays after the step (D).SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing system.

Background Art

[0002] Patent Document 1 discloses a sub-pixel circuit that can be used in a display such as an organic light-emitting diode display, and a method of forming the sub-pixel circuit. The sub-pixel is formed by performing coating of an organic EL (Electro Luminescence) layer using an overhang structure formed on an adjacent PDL (Pixel Defining Layer) structure.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a substrate processing method and a substrate processing system that improve productivity.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a substrate processing method including: (A) preparing a substrate having an electrode array in which a plurality of electrodes are disposed on a substrate surface; (B) forming a sealing laminate having three or more sealing layers laminated in order of a first sealing layer, a second sealing layer, and a third sealing layer on the entire electrode array, and forming the sealing laminate such that an etching rate of the second sealing layer is higher than an etching rate of the third sealing layer; (C) forming a mask on the sealing laminate on which one type of electrode among the plurality of electrodes is not disposed; (D) etching the substrate using the mask to form an umbrella shape at an end of the sealing laminate with respect to an opening such that the one type of electrode is exposed; and (E) forming a light-emitting layer and an electrode layer on the entire electrode array after (D).

Effect of the Invention

[0006] According to one aspect, productivity can be improved.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] In the prior art, in forming an overhang structure, an increase in the number of processes due to an increase in the number of photolithography processes may be a problem. Also, there is a risk of deterioration of the anode electrode due to the influence of moisture or oxygen in the air during wet etching. In addition, a metal layer needs to be used for the handle portion of the overhang structure, and shape control is difficult. Furthermore, in order to establish electrical connection between the handle portion and the cathode electrode, a highly directional deposition technique is required. Therefore, in each of the embodiments described below, a substrate processing method that solves the above problems and can improve productivity will be described.

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and redundant descriptions may be omitted.

[0010] <First Embodiment> An example of a substrate processing method according to the first embodiment for forming a plurality of types of organic EL elements on a substrate will be described with reference to FIGS. 1 to 17. FIG. 1 is a flowchart showing an example of the substrate processing method according to the first embodiment. FIG. 2 is a flowchart showing an example of the formation process of the encapsulation laminate. FIGS. 3 to 17 are examples of schematic cross-sectional views of the substrate in each step.

[0011] Here, a substrate processing method for forming three types of organic EL elements on a substrate will be described as an example. Specifically, the case of forming an organic EL element that emits red (R) light, an organic EL element that emits green (G) light, and an organic EL element that emits blue (B) light on a substrate will be described as an example. Also, the organic EL element is configured by laminating an anode electrode, a light-emitting layer, and a cathode electrode.

[0012] Note that the types of organic EL elements formed on the substrate are not limited to three types, and may be one type, or two or more types.

[0013] (Step S1: Substrate Preparation) In the substrate processing method of FIG. 1, in step S1, a substrate is prepared. FIG. 3 is an example of a cross-sectional schematic view of the substrate prepared in step S1. The substrate has a base material 300 and an electrode array 310. The base material 300 is composed of, for example, a glass plate. Note that the material of the base material 300 is not limited to this, and may be a ceramic plate, a plastic plate, a metal plate, a silicon plate, or the like. Further, the base material 300 may be composed of an insulating material or a material having translucency. Further, the shape of the substrate (base material 300) may be rectangular, circular, or the like, and the shape is not limited.

[0014] The electrode array 310 has a plurality of anode electrodes 311, 312, 313. The plurality of anode electrodes 311, 312, 313 are arranged at different positions on the surface of the substrate (base material 300). Here, the electrode array 310 includes a first anode electrode 311, a second anode electrode 312, and a third anode electrode 313. The plurality of anode electrodes 311, 312, 313 are composed of, for example, indium tin oxide (ITO: Indium Tin Oxide). Note that the plurality of anode electrodes 311, 312, 313 are not limited to this, and a layer made of silver or aluminum may be added as an underlayer between the base material 300 and the anode electrodes 311, 312, 313. Further, the plurality of anode electrodes 311, 312, 313 may be composed of a material having conductivity. Further, the plurality of anode electrodes 311, 312, 313 may be composed of a material having translucency.

[0015] Note that in step S1, the description has been made on the premise of preparing a substrate having the electrode array 310, but it is not limited to this. Step S1 may include a process of preparing a substrate (base material 300) not having the electrode array 310 and forming the electrode array 310 on the substrate.

[0016] (Step S2: Encapsulation laminate formation) In step S2, an encapsulation laminate 320 is formed on the substrate. An example of the formation process of the encapsulation laminate 320 in step S2 will be described with reference to FIG. 2. FIG. 2 shows the details of the formation process of the encapsulation laminate 320. In step S2a, a first encapsulation layer 321 is formed, in step S2b, a second encapsulation layer 322 is formed, and in step S2c, a third encapsulation layer 323 is formed. Thereby, an encapsulation laminate 320 laminated in the order of the first encapsulation layer 321, the second encapsulation layer 322, and the third encapsulation layer 323 from the bottom is formed. The encapsulation laminate 320 is formed over the entire electrode array 310. Note that the encapsulation laminate 320 is not limited to three layers and may have three or more layers.

[0017] Each of the first encapsulation layer 321, the second encapsulation layer 322, and the third encapsulation layer 323 is any one of SiN (silicon nitride film), SiON (silicon oxynitride film), SiO (silicon oxide film), and AlO (aluminum oxide film). The encapsulation laminate 320 is made of any one or a combination of SiN, SiON, SiO, or AlO. That is, the encapsulation laminate 320 may be composed of the same type of film made of one selected from SiN, SiON, SiO, or AlO, or may be composed of different types of films made of a combination of two or three selected from SiN, SiON, SiO, and AlO. Note that the first encapsulation layer 321, the second encapsulation layer 322, and the third encapsulation layer 323 include an inorganic insulating film.

[0018] Hereinafter, as an example of the encapsulation laminate 320, an example in which the first encapsulation layer 321, the second encapsulation layer 322, and the third encapsulation layer 323 are all formed of SiN and the film types are unified will be given. The formation process of the encapsulation laminate 320 is performed in a vacuum atmosphere.

[0019] FIG. 4 is an example of a cross-sectional schematic view of a substrate after the process of step S2. A sealing laminate 320 is formed in which a first sealing layer 321, a second sealing layer 322, and a third sealing layer 323 are laminated in this order from the bottom over the entire electrode array 310. The etching rate of the second sealing layer 322 is formed to be higher than the etching rate of the third sealing layer 323 under the same processing conditions. Details of the process conditions and the film hardness when forming the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 will be described later.

[0020] (Step S3: First Mask Formation) In step S3, a first mask 331 is formed on the substrate. Here, the first mask 331 is formed on the substrate by photolithography. The first mask 331 is a mask of photoresist. The photolithography includes a resist formation process, an exposure process, and a development process. The resist formation process forms photoresist on the substrate. The exposure process irradiates light such as ultraviolet (UV) light or deep ultraviolet (DUV) light through a photomask onto the substrate on which the photoresist is formed. Thereby, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. The development process forms the first mask 331 from the photoresist. In the case of a positive photoresist, the first mask 331 is formed by removing the photoresist in the exposed portion and leaving the photoresist in the unexposed portion. On the other hand, in the case of a negative photoresist, the first mask 331 is formed by removing the photoresist in the unexposed portion and leaving the photoresist in the exposed portion. Note that the formation process of the first mask 331 is performed in an air atmosphere.

[0021] FIG. 5 is an example of a cross-sectional schematic view of a substrate after the process of step S3. The first mask 331 is selectively formed on the sealing laminate 320 where the first anode electrode 311 is not disposed. That is, the first mask 331 is formed on the second anode electrode 312 and the third anode electrode 313 and is not formed on the first anode electrode 311.

[0022] (Step S4: Etching) In step S4, plasma is generated from the etching gas, and the substrate is plasma-etched. Here, using the first mask 331, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 on the first anode electrode 311 are etched. Note that the etching process is a dry etching process and is performed in a vacuum atmosphere. The etching gas is a fluorine-containing gas. For example, the fluorine-containing gas may be CF 4 gas, CHF 3 gas, SF 6 gas, etc. The etching gas may be a gas containing fluorine and oxygen, such as CF 4 gas and O 2 gas, etc.

[0023] During the etching process of the first sealing layer 321 to the third sealing layer 323, the pressure in the processing container 290 described later is controlled to be 10 mTorr (1.33 Pa) or more and 50 mTorr (6.65 Pa) or less by exhaust by the gas supply and exhaust device 250. More preferably, by making the pressure during the etching process of the second sealing layer 322 higher than the pressure during the etching process of the third sealing layer 323, isotropic etching is performed on the second sealing layer 322. Thereby, the second sealing layer 322 is etched so as to cut into the interior more than the third sealing layer 323.

[0024] FIG. 6 is an example of a cross-sectional schematic view of a substrate after the process of step S4. The etching rate of the second sealing layer 322 is higher than that of the third sealing layer 323. That is, the second sealing layer 322 is more easily etched away than the third sealing layer 323. Also, isotropic etching is performed on the second sealing layer 322. Therefore, the second sealing layer 322 is etched so as to cut deeper inside than the third sealing layer 323. Thereby, an umbrella shape can be formed at the end of the sealing laminate 320 with respect to the opening 324. The umbrella shape at the end of the sealing laminate 320 is such that the side surface of the second sealing layer 322 facing the opening 324 cuts deeper inside than the third sealing layer 323, and is composed of a handle portion formed by an inclined surface that falls outward from the center of the first anode electrode 311 from the lower surface to the upper surface of the second sealing layer 322, and an umbrella portion formed by a portion where the third sealing layer 323 protrudes toward the center side of the first anode electrode 311 from the second sealing layer 322. That is, the second sealing layer 322 has a tapered shape such that the opening 324 widens from its lower surface to its upper surface, and the side surfaces of the first sealing layer 321 and the third sealing layer 323 have a vertical shape. Note that the side surface of the third sealing layer 323 may protrude toward the opening 324 side more than the side surface of the first sealing layer 321. By performing anisotropic etching on the first sealing layer 321 and the third sealing layer 323, the etching time until the first anode electrode 311 is exposed from the opening 324 can be shortened. Thereby, productivity can be improved. Note that the first mask 331 is all ashed and removed in the etching process.

[0025] (Step S5: Formation of First Light-Emitting Layer) In step S5, a continuous film of the first light-emitting layer 341 is formed so as to cover the entire electrode array 310. Note that the first light-emitting layer 341 contains an organic EL and is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, red (R)) when a voltage is applied between electrodes (the first anode electrode 311 and a first cathode electrode 342, which will be described later). The formation process of the first light-emitting layer 341 is performed, for example, by vacuum evaporation or the like.

[0026] Due to the umbrella shape formed in the opening 324, the first light-emitting layer 341 is cut off from the periphery, and a part of the first light-emitting layer 341 is formed on the first anode electrode 311, and the rest of the first light-emitting layer 341 is formed on the encapsulation laminate 320 (the third encapsulation layer 323) (see Fig. 7).

[0027] (Step S6: Formation of the first cathode electrode) In step S5, a first cathode electrode 342 is formed on the substrate. Here, a continuous film of the first cathode electrode 342 is formed on the first light-emitting layer 341. The first cathode electrode 342 is composed of, for example, ITO, IZO, etc., and a layer made of MgAg may be added as an underlayer between the first light-emitting layer 341 and the first cathode electrode 342. Also, when having a cavity structure, MgAg may be used as the cathode electrode material. Note that the formation process of the first cathode electrode 342 is performed by any film formation process such as, for example, vacuum evaporation, PVD (Physical Vapor Deposition) film formation, CVD (Chemical Vapor Deposition) film formation, ALD (Atomic Layer Deposition) film formation, or a combination thereof.

[0028] Due to the umbrella shape formed in the opening 324, the first cathode electrode 342 is cut off from the periphery, and a part of the first cathode electrode 342 is formed on the first light-emitting layer 341 on the first anode electrode 311, and the rest of the first cathode electrode 342 is formed on the first light-emitting layer 341 on the encapsulation laminate 320 (the third encapsulation layer 323) (see Fig. 7).

[0029] (Step S7: Formation of the fourth a encapsulation layer) In step S7, a fourth a-sealing layer 351 is formed on the substrate. The fourth a-sealing layer 351 is an example of the fourth sealing layer formed on the electrode layer. Here, a continuous film of the fourth a-sealing layer 351 is formed on the first cathode electrode 342. The fourth a-sealing layer 351 includes an inorganic insulating film. The fourth a-sealing layer 351 is composed of, for example, any one of SiO, SiN, SiON, AlO or a combination thereof. Note that the formation process of the fourth a-sealing layer 351 is performed by, for example, any one of film formation processes such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation or a combination thereof. Further, the formation processes of the first light-emitting layer 341, the first cathode electrode 342 and the fourth a-sealing layer 351 are performed in a vacuum atmosphere.

[0030] FIG. 7 is an example of a cross-sectional schematic view of the substrate after the process of step S7. The first light-emitting layer 341 is formed on the first anode electrode 311. Further, the first cathode electrode 342 is formed on the first light-emitting layer 341. Further, the fourth a-sealing layer 351 is formed on the first cathode electrode 342. The opening 324 is filled with the fourth a-sealing layer 351. Thereby, moisture and oxygen are prevented from entering the films of the first light-emitting layer 341 or the first cathode electrode 342, and the life of the first light-emitting layer 341 can be extended.

[0031] (Step S8: Etching) In step S8, the first light-emitting layer 341, the first cathode electrode 342 and the fourth a-sealing layer 351 on the sealing laminate 320 are removed by etching. On the other hand, on the first anode electrode 311, the first light-emitting layer 341 and the first cathode electrode 342 covered with the fourth a-sealing layer 351 remain. Thus, by the processes of steps S3 to S8, a first laminate (organic EL element) in which the first anode electrode 311, the first light-emitting layer 341, the first cathode electrode 342 and the fourth a-sealing layer 351 are laminated is formed on the substrate.

[0032] FIG. 8 is an example of a cross-sectional schematic view of a substrate after the process of step S8. The plurality of anode electrodes 311, 312, 313 are sealed by a sealing laminate 320, and the first light-emitting layer 341 and the first cathode electrode 342 are sealed by a fourth a sealing layer 351. Thereby, when the substrate is exposed to an air atmosphere, it is possible to suppress the plurality of anode electrodes 311, 312, 313, the first light-emitting layer 341, and the first cathode electrode 342 from coming into contact with oxygen, moisture, or the like.

[0033] (Step S9: Second mask formation) In step S9, a second mask 332 is formed on the substrate. Here, the second mask 332 is formed on the substrate by photolithography. The second mask 332 is a mask of photoresist. The photolithography is the same as the photolithography in step S3. Note that the formation process of the second mask 332 is performed in an air atmosphere.

[0034] FIG. 9 is an example of a cross-sectional schematic view of a substrate after the process of step S9. The second mask 332 is selectively formed on the sealing laminate 320 where the second anode electrode 312 is not disposed. That is, the second mask 332 is formed on the first anode electrode 311 and the third anode electrode 313, and is not formed on the second anode electrode 312.

[0035] (Step S10: Etching) In step S10, plasma is generated from an etching gas, and the substrate is plasma-etched. Here, using the second mask 332, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 on the second anode electrode 312 are etched. Note that the etching process is a dry etching process and is performed in a vacuum atmosphere. As the etching gas, an etching gas similar to the etching gas used in step S4 can be used.

[0036] FIG. 10 is an example of a cross-sectional schematic view of a substrate after the process of step S10. The etching rate of the second sealing layer 322 is higher than that of the third sealing layer 323. That is, the second sealing layer 322 is more easily etched away than the third sealing layer 323. Therefore, the second sealing layer 322 can be etched so as to cut deeper inside than the third sealing layer 323. Thereby, an umbrella shape can be formed at the end of the sealing laminate 320 with respect to the opening 325. Further, by performing anisotropic etching on the first sealing layer 321 and the third sealing layer 323, the etching time until the second anode electrode 312 is exposed from the opening 325 can be shortened. Thereby, productivity can be improved. Note that the second mask 332 is all ashed and removed in the etching process.

[0037] (Step S11: Second light-emitting layer formation) In step S11, a continuous film of the second light-emitting layer 343 is formed so as to cover the entire electrode array 310. Note that the second light-emitting layer 343 contains an organic EL and is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, green (G)) when a voltage is applied between electrodes (the second anode electrode 312 and a second cathode electrode 344, which will be described later). The formation process of the second light-emitting layer 343 is performed by, for example, vacuum evaporation or the like.

[0038] Due to the umbrella shape formed in the opening 325, the second light-emitting layer 343 is trimmed, a part of the second light-emitting layer 343 is formed on the second anode electrode 312, and the rest of the second light-emitting layer 343 is formed on the sealing laminate 320 (the third sealing layer 323) (see FIG. 11).

[0039] (Step S12: Second cathode electrode formation) In step S12, a second cathode electrode 344 is formed on the substrate. Here, a continuous film of the second cathode electrode 344 is formed on the second light-emitting layer 343. The second cathode electrode 344 is composed of, for example, ITO, IZO, etc., and a layer made of MgAg may be added as an underlayer between the second light-emitting layer 343 and the second cathode electrode 344. Also, when having a cavity structure, MgAg may be used as the cathode electrode material. Note that the formation process of the second cathode electrode 344 is performed by any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0040] Due to the umbrella shape formed in the opening 325, the second cathode electrode 344 is edge-cut, a part of the second cathode electrode 344 is formed on the second light-emitting layer 343 on the second anode electrode 312, and the rest of the second cathode electrode 344 is formed on the second light-emitting layer 343 on the encapsulation laminate 320 (the third encapsulation layer 323) (see FIG. 11).

[0041] (Step S13: Formation of the fourth b encapsulation layer) In step S13, a fourth b encapsulation layer 352 is formed on the substrate. The fourth b encapsulation layer 352 is an example of the fourth encapsulation layer formed on the electrode layer. Here, a continuous film of the fourth b encapsulation layer 352 is formed on the second cathode electrode 344. The fourth b encapsulation layer 352 includes an inorganic insulating film. The fourth b encapsulation layer 352 is composed of, for example, any one of SiO, SiN, SiON, AlO, or a combination thereof. Note that the formation process of the fourth b encapsulation layer 352 is performed by any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof. Also, the formation processes of the second light-emitting layer 343, the second cathode electrode 344, and the fourth b encapsulation layer 352 are performed in a vacuum atmosphere.

[0042] FIG. 11 is an example of a cross-sectional schematic view of a substrate after the process of step S13. A second light-emitting layer 343 is formed on the second anode electrode 312. Further, a second cathode electrode 344 is formed on the second light-emitting layer 343. Further, a fourth b-sealing layer 352 is formed on the second cathode electrode 344. The opening 325 is filled with the fourth b-sealing layer 352. Thereby, it is possible to avoid moisture and oxygen from being mixed into the films of the second light-emitting layer 343 or the second cathode electrode 344, and to extend the life of the second light-emitting layer 343.

[0043] (Step S14: Etching) In step S14, by etching, the second light-emitting layer 343, the second cathode electrode 344, and the fourth b-sealing layer 352 on the sealing laminate 320 are removed. On the other hand, on the second anode electrode 312, the second light-emitting layer 343 and the second cathode electrode 344 covered with the fourth b-sealing layer 352 remain. In this way, by the processes of steps S9 to S14, a second laminate (organic EL element) in which the second anode electrode 312, the second light-emitting layer 343, the second cathode electrode 344, and the fourth b-sealing layer 352 are laminated is formed on the substrate.

[0044] FIG. 12 is an example of a cross-sectional schematic view of a substrate after the process of step S14. The plurality of anode electrodes 311, 312, 313 are sealed by the sealing laminate 320, and the second light-emitting layer 343 and the second cathode electrode 344 are sealed by the fourth b-sealing layer 352. Thereby, when the substrate is exposed to an air atmosphere, the plurality of anode electrodes 311, 312, 313, the first light-emitting layer 341, the first cathode electrode 342, the second light-emitting layer 343, and the second cathode electrode 344 are prevented from coming into contact with oxygen, moisture, etc.

[0045] (Step S15: Formation of Third Mask) In step S15, a third mask 333 is formed on the substrate. Here, the third mask 333 is formed on the substrate by photolithography. The third mask 333 is a photoresist mask. The formation process of the third mask 333 is performed in an air atmosphere.

[0046] FIG. 13 is an example of a cross-sectional schematic view of a substrate after the process of step S15. The third mask 333 is selectively formed on the sealing laminate 320 where the third anode electrode 313 is not disposed. That is, the third mask 333 is formed on the first anode electrode 311 and the second anode electrode 312, and is not formed on the third anode electrode 313.

[0047] (Step S16: Etching) In step S16, plasma is generated from the etching gas, and the substrate is plasma-etched. Here, using the third mask 333, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 on the third anode electrode 313 are etched. The etching process is a dry etching process and is performed in a vacuum atmosphere. As the etching gas, an etching gas similar to the etching gas used in step S4 can be used.

[0048] FIG. 14 is an example of a cross-sectional schematic view of a substrate after the process of step S16. The etching rate of the second sealing layer 322 is higher than that of the third sealing layer 323. That is, the second sealing layer 322 is more easily etched away than the third sealing layer 323. Therefore, the second sealing layer 322 can be etched so as to cut deeper inside than the third sealing layer 323. Thereby, an umbrella shape can be formed at the end of the sealing laminate 320 with respect to the opening 326. Also, by performing anisotropic etching on the first sealing layer 321 and the third sealing layer 323, the etching time until the third anode electrode 313 is exposed from the opening 326 can be shortened. Thereby, productivity can be improved. Note that the third mask 333 is all ashed and removed in the etching process.

[0049] (Step S17: Formation of Third Light-Emitting Layer) In step S17, a continuous film of the third light-emitting layer 345 is formed so as to cover the entire electrode array 310. The third light-emitting layer 345 includes an organic EL, and is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, blue (B)) by applying a voltage between electrodes (the third anode electrode 313 and the third cathode electrode 346, which will be described later). The formation process of the third light-emitting layer 345 is performed, for example, by vacuum evaporation or the like.

[0050] Due to the umbrella shape formed in the opening 326, the third light-emitting layer 345 is trimmed from the periphery, a part of the third light-emitting layer 345 is formed on the third anode electrode 313, and the rest of the third light-emitting layer 345 is formed on the sealing laminate 320 (the third sealing layer 323) (see FIG. 15).

[0051] (Step S18: Formation of the third cathode electrode) In step S18, a third cathode electrode 346 is formed on the substrate. Here, a continuous film of the third cathode electrode 346 is formed on the third light-emitting layer 345. The third cathode electrode 346 is composed of, for example, ITO, IZO, etc., and a layer made of MgAg may be added as an underlayer between the third light-emitting layer 345 and the third cathode electrode 346. Also, when having a cavity structure, MgAg may be used as the cathode electrode material. The formation process of the third cathode electrode 346 is performed by, for example, any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0052] Due to the umbrella shape formed in the opening 326, the third cathode electrode 346 is trimmed from the periphery, a part of the third cathode electrode 346 is formed on the third light-emitting layer 345 on the third anode electrode 313, and the rest of the third cathode electrode 346 is formed on the third light-emitting layer 345 on the sealing laminate 320 (the third sealing layer 323) (see FIG. 15).

[0053] (Step S19: Formation of the fourth c sealing layer) In step S19, a fourth c - sealing layer 353 is formed on the substrate. The fourth c - sealing layer 353 is an example of the fourth sealing layer formed on the electrode layer. Here, a continuous film of the fourth c - sealing layer 353 is formed on the third cathode electrode 346. The fourth c - sealing layer 353 includes an inorganic insulating film. The fourth c - sealing layer 353 is composed of, for example, any one of SiO, SiN, SiON, AlO or a combination thereof. Note that the formation process of the fourth c - sealing layer 353 is performed by any one of film - forming processes such as vacuum evaporation, PVD film - forming, CVD film - forming, ALD film - forming or a combination thereof. Also, the formation processes of the third light - emitting layer 345, the third cathode electrode 346 and the fourth c - sealing layer 353 are performed in a vacuum atmosphere.

[0054] FIG. 15 is an example of a cross - sectional schematic view of the substrate after the process of step S19. The third light - emitting layer 345 is formed on the third anode electrode 313. Also, the third cathode electrode 346 is formed on the third light - emitting layer 345. Further, the fourth c - sealing layer 353 is formed on the third cathode electrode 346. The opening 326 is filled with the fourth c - sealing layer 353. Thereby, moisture and oxygen are prevented from entering the films of the third light - emitting layer 345 or the third cathode electrode 346, and the lifetime of the third light - emitting layer 345 can be extended.

[0055] (Step S20: Etching) In step S20, the third light - emitting layer 345, the third cathode electrode 346 and the fourth c - sealing layer 353 on the sealing laminate 320 are removed by etching. In this way, by the processes of steps S15 to S20, a third laminate (organic EL element) in which the third anode electrode 313, the third light - emitting layer 345, the third cathode electrode 346 and the fourth c - sealing layer 353 are laminated is formed on the substrate. Further, by etching, the fourth a - sealing layer 351, the fourth b - sealing layer 352, the fourth c - sealing layer 353, the second sealing layer 322 and the third sealing layer 323 of the sealing laminate 320 are removed until the first cathode electrode 342, the second cathode electrode 344 and the third cathode electrode 346 are exposed.

[0056] FIG. 16 is an example of a cross-sectional schematic view of a substrate after the process of step S20. A first light-emitting layer 341 and a first cathode electrode 342 are formed on the first anode electrode 311. A second light-emitting layer 343 and a second cathode electrode 344 are formed on the second anode electrode 312. A third light-emitting layer 345 and a third cathode electrode 346 are formed on the third anode electrode 313. Thus, a laminate array in which a laminate formed of light-emitting layers and electrode layers that emit different colors is exposed is fabricated.

[0057] In step S21, a wiring layer 361 is formed on the substrate. Here, a continuous film of the wiring layer 361 is formed on the first sealing layer 321, the first cathode electrode 342, the second cathode electrode 344, and the third cathode electrode 346. Thereby, the wiring layer 361 is electrically connected to the first cathode electrode 342, the second cathode electrode 344, and the third cathode electrode 346. The wiring layer 361 is composed of, for example, ITO, IZO, or the like. Note that the formation process of the wiring layer 361 is performed by any one of film formation processes such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0058] In step S22, a fifth sealing layer 362 is formed on the substrate. Here, a continuous film of the fifth sealing layer 362 is formed on the substrate on which the wiring layer 361 is formed. The fifth sealing layer 362 includes an inorganic insulating film. The fifth sealing layer 362 is composed of, for example, any one of SiO, SiN, SiON, AlO, or a combination thereof. Note that the formation process of the fifth sealing layer 362 is performed by any one of film formation processes such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof. Further, the formation process of the fifth sealing layer 362 is performed in a vacuum atmosphere.

[0059] FIG. 17 is an example of a cross-sectional schematic view of a substrate after the process of step S22. The fifth sealing layer 362 seals the first to third anode electrodes 311, 312, 313, the first to third light-emitting layers 341, 343, 345, the first to third cathode electrodes 342, 344, 346, and the wiring layer 361. Thereby, when the substrate is exposed to an air atmosphere, the first to third anode electrodes 311, 312, 313, the first to third light-emitting layers 341, 343, 345, the first to third cathode electrodes 342, 344, 346, and the wiring layer 361 are prevented from coming into contact with oxygen, moisture, etc.

[0060] As described above, according to the substrate processing method according to the first embodiment, three types of organic EL elements that emit light in red (R), green (G), and blue (B) can be formed on the substrate.

[0061] Further, according to the substrate processing method according to the first embodiment, in the photolithography process, electrodes (the first to third anode electrodes 311, 312, 313, the first to third cathode electrodes 342, 344, 346) and the first to third light-emitting layers 341, 343, 345 are prevented from being deteriorated by moisture, oxygen, etc. Thereby, deterioration of the organic EL element can be suppressed and the lifetime can be extended.

[0062] In the formation of an organic EL element by evaporation using a fine metal mask (FMM), the space between pixels (organic EL elements) becomes wider. On the other hand, according to the substrate processing method according to the first embodiment, since the organic EL element is formed without using an FMM, the space between adjacent pixels becomes narrower than when the organic EL element is formed using an FMM, and the light-emitting area can be widened. Further, according to the substrate processing method according to the first embodiment, the yield is higher and the productivity is improved than when the organic EL element is formed using an FMM.

[0063] <Second Embodiment> An example of a substrate processing method according to the second embodiment, in which a plurality of types of organic EL elements are formed on a substrate, will be described with reference to FIGS. 18 to 31. FIG. 18 is a flowchart showing an example of the substrate processing method according to the second embodiment. FIGS. 19 to 31 are examples of cross-sectional schematic views of the substrate in each step.

[0064] (Step S31: Substrate preparation) In the substrate processing method of FIG. 18, in step S31, a substrate is prepared. FIG. 19 is an example of a cross-sectional schematic view of the substrate prepared in step S31. The substrate has a base material 400 and an electrode array 410. The material and shape of the base material 400 are the same as those of the base material 300 in FIG. 3.

[0065] The electrode array 410 has a plurality of anode electrodes 411, 412, 413. Here, the electrode array 410 includes a first anode electrode 411, a second anode electrode 412, and a third anode electrode 413. The plurality of anode electrodes 411, 412, 413 are made of, for example, indium tin oxide (ITO: Indium Tin Oxide). Note that the plurality of anode electrodes 411, 412, 413 are not limited to this, and a layer made of silver or aluminum may be added as an underlayer between the base material 400 and the anode electrodes 411, 412, 413. Further, the plurality of anode electrodes 411, 412, 413 may be made of a conductive material. Further, the plurality of anode electrodes 411, 412, 413 may be made of a light-transmissive material. Further, the plurality of anode electrodes 411, 412, 413 are arranged at different positions on the surface of the substrate (base material 400).

[0066] Note that, in step S31, the description has been made assuming that a substrate having the electrode array 410 is prepared, but it is not limited to this. Step S31 may include a step of preparing a substrate (base material 400) that does not have the electrode array 410 and forming the electrode array 410 on the substrate.

[0067] (Step S32: Encapsulation laminate formation) In step S32, a sealing laminate 420 is formed on the substrate. Since the formation process of the sealing laminate 420 in step S32 is the same as the formation process of the sealing laminate 320 according to the first embodiment (FIG. 2), the description thereof is omitted here.

[0068] Hereinafter, as an example of the sealing laminate 420, an example is given in which all of the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 are formed of SiN and the film types are unified. Further, the etching rate of the second sealing layer 422 is formed to be higher than the etching rate of the third sealing layer 423 under the same processing conditions. The formation process of the sealing laminate 420 is performed in a vacuum atmosphere.

[0069] FIG. 20 is an example of a cross-sectional schematic view of the substrate after the step S32. A sealing laminate 420 in which the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 are laminated in this order is formed over the entire electrode array 410. The process conditions and film hardness when forming each of the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 will be described later.

[0070] (Step S33: First mask formation) In step S33, a first mask 431 is formed on the substrate. Here, the first mask 431 is formed on the substrate by photolithography. The first mask 431 is a photoresist mask. The photolithography is the same as the photolithography in step S3 etc. of FIG. 1. The formation process of the first mask 431 is performed in an air atmosphere.

[0071] FIG. 21 is an example of a cross-sectional schematic view of the substrate after the step S33. The first mask 431 is selectively formed on the sealing laminate 420 where the first anode electrode 411 is not disposed. That is, the first mask 431 is formed over the second anode electrode 412 and the third anode electrode 413, and is not formed over the first anode electrode 411.

[0072] (Step S34: Etching) In step S34, plasma is generated from the etching gas, and the substrate is plasma-etched. Here, using the first mask 431, the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 on the first anode electrode 411 are etched. Note that the etching process is a dry etching process and is performed in a vacuum atmosphere. As the etching gas, an etching gas similar to the etching gas used in step S4 etc. of FIG. 1 can be used.

[0073] FIG. 22 is an example of a cross-sectional schematic view of the substrate after the process of step S34. The etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. That is, the second sealing layer 422 is more easily etched away than the third sealing layer 423. Therefore, the second sealing layer 422 can be etched so as to cut deeper inside than the third sealing layer 423. Thereby, an umbrella shape can be formed at the end of the sealing laminate 420 with respect to the opening 424. Also, by performing anisotropic etching on the first sealing layer 421 and the third sealing layer 423, the etching time until the first anode electrode 411 is exposed from the opening 424 can be shortened. Thereby, productivity can be improved. Note that the first mask 431 is all ashed and removed in the etching process.

[0074] (Step S35: Formation of the first light-emitting layer) In step S35, a continuous film of the first light-emitting layer 441 is formed so as to cover the entire electrode array 410. Note that the first light-emitting layer 441 contains an organic EL and is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, red (R)) when a voltage is applied between electrodes (the first anode electrode 411 and the first cathode electrode 442 described later). Note that the formation process of the first light-emitting layer 441 is performed by, for example, vacuum evaporation or the like.

[0075] Due to the umbrella shape formed in the opening 424, the first light-emitting layer 441 is bordered from the surroundings, and a part of the first light-emitting layer 441 is formed on the first anode electrode 411, and the rest of the first light-emitting layer 441 is formed on the encapsulation laminate 420 (the third encapsulation layer 423) (see FIG. 23).

[0076] (Step S36: Formation of the first cathode electrode) In step S36, the first cathode electrode 442 is formed on the substrate. Here, a continuous film of the first cathode electrode 442 is formed on the first light-emitting layer 441. The first cathode electrode 442 is composed of, for example, ITO, IZO, etc., and a layer made of MgAg may be added as an underlayer between the first light-emitting layer 441 and the first cathode electrode 442. Also, when having a cavity structure, MgAg may be used as the cathode electrode material. Note that the formation process of the first cathode electrode 442 is performed by any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0077] Due to the umbrella shape formed in the opening 424, the first cathode electrode 442 is bordered from the surroundings, and a part of the first cathode electrode 442 is formed on the first light-emitting layer 441 on the first anode electrode 411, and the rest of the first cathode electrode 442 is formed on the first light-emitting layer 441 on the encapsulation laminate 420 (the third encapsulation layer 423) (see FIG. 23).

[0078] (Step S37: Formation of the fourth a encapsulation layer) In step S37, a fourth a - sealing layer 451 is formed on the substrate. The fourth a - sealing layer 451 is an example of the fourth sealing layer formed on the electrode layer. Here, a continuous film of the fourth a - sealing layer 451 is formed on the first cathode electrode 442. The fourth a - sealing layer 451 includes an inorganic insulating film. The fourth a - sealing layer 451 is composed of, for example, any one of SiO, SiN, SiON, AlO or a combination thereof. Note that the formation process of the fourth a - sealing layer 451 is performed by any one of film - forming processes such as vacuum evaporation, PVD film - forming, CVD film - forming, ALD film - forming or a combination thereof. Also, the formation processes of the first light - emitting layer 441, the first cathode electrode 442 and the fourth a - sealing layer 451 are performed in a vacuum atmosphere.

[0079] FIG. 23 is an example of a schematic cross - sectional view of the substrate after the process of step S37. The first light - emitting layer 441 is formed on the first anode electrode 411. Also, the first cathode electrode 442 is formed on the first light - emitting layer 441. Further, the fourth a - sealing layer 451 is formed on the first cathode electrode 442. The opening 424 is filled with the fourth a - sealing layer 451. Thereby, moisture and oxygen are prevented from mixing into the films of the first light - emitting layer 441 or the first cathode electrode 442, and the lifetime of the first light - emitting layer 441 can be extended. Thus, by the processes of steps S33 to S37, a first laminate (organic EL element) in which the first anode electrode 411, the first light - emitting layer 441, the first cathode electrode 442 and the fourth a - sealing layer 451 are laminated is formed on the substrate.

[0080] (Step S38: Second mask formation) In step S38, a second mask 432 is formed on the substrate. Here, the second mask 432 is formed on the substrate by photolithography. The second mask 432 is a photoresist mask. The photolithography is the same as the photolithography in step S3 of FIG. 1. Note that the formation process of the second mask 432 is performed in an air atmosphere.

[0081] FIG. 24 is an example of a cross-sectional schematic view of a substrate after the process of step S38. The second mask 432 is selectively formed on the sealing laminate 420 where the second anode electrode 412 is not disposed. That is, the second mask 432 is formed on the first anode electrode 411 and the third anode electrode 413, and is not formed on the second anode electrode 412.

[0082] (Step S39: Etching) In step S39, plasma is generated from an etching gas, and the substrate is plasma-etched. Here, using the second mask 432, the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 on the second anode electrode 412 are etched. Note that the etching process is a dry etching process and is performed in a vacuum atmosphere. As the etching gas, an etching gas similar to the etching gas used in step S4 etc. of FIG. 1 can be used.

[0083] FIG. 25 is an example of a cross-sectional schematic view of a substrate after the process of step S39. The etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. That is, the second sealing layer 422 is more easily etched away than the third sealing layer 423. Therefore, the second sealing layer 422 can be etched so as to cut deeper inside than the third sealing layer 423. Thereby, an umbrella shape can be formed at the end of the sealing laminate 420 with respect to the opening 425. Further, by performing anisotropic etching on the first sealing layer 421 and the third sealing layer 423, the etching time until the second anode electrode 412 is exposed from the opening 425 can be shortened. Thereby, productivity can be improved. Note that the second mask 432 is completely ashed and removed in the etching process.

[0084] (Step S40: Second light-emitting layer formation) In step S40, a continuous film of the second light-emitting layer 443 is formed so as to cover the entire electrode array 410. The second light-emitting layer 443 includes an organic EL, and is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, green (G)) by applying a voltage between electrodes (the second anode electrode 412 and the second cathode electrode 444 described later). The formation process of the second light-emitting layer 443 is performed by, for example, vacuum evaporation or the like.

[0085] Due to the umbrella shape formed in the opening 425, the second light-emitting layer 443 is cut off from the surroundings, a part of the second light-emitting layer 443 is formed on the second anode electrode 412, and the rest of the second light-emitting layer 443 is formed on the sealing laminate 420 (the third sealing layer 423) (see FIG. 26).

[0086] (Step S41: Formation of the second cathode electrode) In step S41, a second cathode electrode 444 is formed on the substrate. Here, a continuous film of the second cathode electrode 444 is formed on the second light-emitting layer 443. The second cathode electrode 444 is composed of, for example, ITO, IZO, etc., and a layer made of MgAg may be added as an underlayer between the second light-emitting layer 443 and the second cathode electrode 444. Also, when having a cavity structure, MgAg may be used as the cathode electrode material. The formation process of the second cathode electrode 444 is performed by, for example, any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0087] Due to the umbrella shape formed in the opening 425, the second cathode electrode 444 is cut off from the surroundings, a part of the second cathode electrode 444 is formed on the second light-emitting layer 443 on the second anode electrode 412, and the rest of the second cathode electrode 444 is formed on the second light-emitting layer 443 on the sealing laminate 420 (the third sealing layer 423) (see FIG. 26).

[0088] (Step S42: Formation of the fourth b sealing layer) In step S42, a fourth b sealing layer 452 is formed on the substrate. The fourth b sealing layer 452 is an example of the fourth sealing layer formed on the electrode layer. Here, a continuous film of the fourth b sealing layer 452 is formed on the second cathode electrode 444. The fourth b sealing layer 452 includes an inorganic insulating film. The fourth b sealing layer 452 is composed of, for example, any one of SiO, SiN, SiON, AlO or a combination thereof. Note that the formation process of the fourth b sealing layer 452 is performed by any one of film formation processes such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation or a combination thereof. Further, the formation processes of the second light-emitting layer 443, the second cathode electrode 444, and the fourth b sealing layer 452 are performed in a vacuum atmosphere.

[0089] FIG. 26 is an example of a schematic cross-sectional view of the substrate after the process of step S42. The second light-emitting layer 443 is formed on the second anode electrode 412. Further, the second cathode electrode 444 is formed on the second light-emitting layer 443. Further, the fourth b sealing layer 452 is formed on the second cathode electrode 444. The opening 425 is filled with the fourth b sealing layer 452. Thereby, moisture and oxygen are prevented from mixing into the films of the second light-emitting layer 443 or the second cathode electrode 444, and the lifetime of the second light-emitting layer 443 can be extended. Thus, by the processes of steps S38 to S42, a second laminate (organic EL element) in which the second anode electrode 412, the second light-emitting layer 443, the second cathode electrode 444, and the fourth b sealing layer 452 are laminated is formed on the substrate.

[0090] (Step S43: Formation of the third mask) In step S43, a third mask 433 is formed on the substrate. Here, the third mask 433 is formed on the substrate by photolithography. The third mask 433 is a photoresist mask. The photolithography is the same as the photolithography in step S3 of FIG. 1. Note that the formation process of the third mask 433 is performed in an air atmosphere.

[0091] FIG. 27 is an example of a cross-sectional schematic view of a substrate after the process of step S43. The third mask 433 is selectively formed on the sealing laminate 420 where the third anode electrode 413 is not disposed. That is, the third mask 433 is formed on the first anode electrode 411 and the second anode electrode 412, and is not formed on the third anode electrode 413.

[0092] (Step S44: Etching) In step S44, plasma is generated from an etching gas, and the substrate is plasma-etched. Here, using the third mask 433, the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 on the third anode electrode 413 are etched. The etching process is a dry etching process and is performed in a vacuum atmosphere. As the etching gas, an etching gas similar to the etching gas used in step S4, etc. of FIG. 1 can be used.

[0093] FIG. 28 is an example of a cross-sectional schematic view of a substrate after the process of step S44. The etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. That is, the second sealing layer 422 is more easily etched away than the third sealing layer 423. Therefore, the second sealing layer 422 can be etched so as to cut deeper inside than the third sealing layer 423. Thereby, an umbrella shape can be formed at the end of the sealing laminate 420 with respect to the opening 426. Further, by performing anisotropic etching on the first sealing layer 421 and the third sealing layer 423, the etching time until the third anode electrode 413 is exposed from the opening 426 can be shortened. Thereby, productivity can be improved. Note that the third mask 433 is all ashed and removed in the etching process.

[0094] (Step S45: Formation of the Third Light-Emitting Layer) In step S45, a continuous film of the third light-emitting layer 445 is formed so as to cover the entire electrode array 410. The third light-emitting layer 445 includes an organic EL, and is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, blue (B)) by applying a voltage between electrodes (the third anode electrode 413 and the third cathode electrode 446, which will be described later). The formation process of the third light-emitting layer 445 is performed by, for example, vacuum evaporation or the like.

[0095] Due to the umbrella shape formed in the opening 426, the third light-emitting layer 445 is trimmed from the periphery, a part of the third light-emitting layer 445 is formed on the third anode electrode 413, and the rest of the third light-emitting layer 445 is formed on the encapsulation laminate 420 (the third encapsulation layer 423) (see FIG. 29).

[0096] (Step S46: Formation of the third cathode electrode) In step S46, a third cathode electrode 446 is formed on the substrate. Here, a continuous film of the third cathode electrode 446 is formed on the third light-emitting layer 445. The third cathode electrode 446 is composed of, for example, ITO, IZO, etc., and a layer made of MgAg may be added as an underlayer between the third light-emitting layer 445 and the third cathode electrode 446. Also, when having a cavity structure, MgAg may be used as the cathode electrode material. The formation process of the third cathode electrode 446 is performed by, for example, any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0097] Due to the umbrella shape formed in the opening 426, the third cathode electrode 446 is trimmed from the periphery, a part of the third cathode electrode 446 is formed on the third light-emitting layer 445 on the third anode electrode 413, and the rest of the third cathode electrode 446 is formed on the third light-emitting layer 445 on the encapsulation laminate 420 (the third encapsulation layer 423) (see FIG. 29).

[0098] (Step S47: Formation of the fourth c encapsulation layer) In step S47, a fourth c-sealing layer 453 is formed on the substrate. The fourth c-sealing layer 453 is an example of the fourth sealing layer formed on the electrode layer. Here, a continuous film of the fourth c-sealing layer 453 is formed on the third cathode electrode 446. The fourth c-sealing layer 453 includes an inorganic insulating film. The fourth c-sealing layer 453 is composed of, for example, any one of SiO, SiN, SiON, AlO, or a combination thereof. Note that the formation process of the fourth c-sealing layer 453 is performed by any one of film formation processes such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof. Further, the formation processes of the third light-emitting layer 445, the third cathode electrode 446, and the fourth c-sealing layer 453 are performed in a vacuum atmosphere.

[0099] FIG. 29 is an example of a schematic cross-sectional view of the substrate after the process of step S47. The third light-emitting layer 445 is formed on the third anode electrode 413. Further, the third cathode electrode 446 is formed on the third light-emitting layer 445. Further, the fourth c-sealing layer 453 is formed on the third cathode electrode 446. The opening 426 is filled with the fourth c-sealing layer 453. Thereby, moisture and oxygen are prevented from being mixed into the films of the third light-emitting layer 445 or the third cathode electrode 446, and the lifetime of the third light-emitting layer 445 can be extended. In this way, by the processes of steps S43 to S47, a third laminate (organic EL element) in which the third anode electrode 413, the third light-emitting layer 445, the third cathode electrode 446, and the fourth c-sealing layer 453 are laminated is formed on the substrate.

[0100] (Step S48: Etching) In step S48, the third light-emitting layer 445, the third cathode electrode 446, and the fourth c-sealing layer 453 on the fourth b-sealing layer 452 are removed by etching. Further, the second light-emitting layer 443, the second cathode electrode 444, the fourth b-sealing layer 452, and the fourth c-sealing layer 453 on the fourth a-sealing layer 451 are removed by etching. Further, the fourth a-sealing layer 451, the fourth b-sealing layer 452, the fourth c-sealing layer 453, the second sealing layer 422, and the third sealing layer 423 of the sealing laminate 420 are removed by etching until the first cathode electrode 442, the second cathode electrode 444, and the third cathode electrode 446 are exposed.

[0101] FIG. 30 is an example of a schematic cross-sectional view of a substrate after the process of step S48. A first light-emitting layer 441 and a first cathode electrode 442 are formed on a first anode electrode 411. A second light-emitting layer 443 and a second cathode electrode 444 are formed on a second anode electrode 412. A third light-emitting layer 445 and a third cathode electrode 446 are formed on a third anode electrode 413.

[0102] In step S49, a wiring layer 461 is formed on the substrate. Here, a continuous film of the wiring layer 461 is formed on the first sealing layer 421, the first cathode electrode 442, the second cathode electrode 444, and the third cathode electrode 446. Thereby, the wiring layer 461 is electrically connected to the first cathode electrode 442, the second cathode electrode 444, and the third cathode electrode 446. The wiring layer 461 is made of, for example, ITO, IZO, or the like. Note that the formation process of the wiring layer 461 is performed by any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof.

[0103] In step S50, a fifth sealing layer 462 is formed on the substrate. Here, a continuous film of the fifth sealing layer 462 is formed on the substrate on which the wiring layer 461 is formed. The fifth sealing layer 462 includes an inorganic insulating film. The fifth sealing layer 462 is made of, for example, any one of SiO, SiN, SiON, AlO, or a combination thereof. Note that the formation process of the fifth sealing layer 462 is performed by any film formation process such as vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or a combination thereof. Further, the formation process of the fifth sealing layer 462 is performed in a vacuum atmosphere.

[0104] In addition, in this embodiment, the top-emission type cathode electrode material and anode electrode material have been described, but the present invention is not limited to this, and a bottom-emission type may be used. As the bottom-emission type cathode electrode material, aluminum or the like is preferable, and as the anode electrode material, ITO, IZO, or the like is preferable. In the case of a cavity structure, a layer such as silver may be sandwiched in the ITO film of the cathode electrode material.

[0105] FIG. 31 is an example of a schematic cross-sectional view of a substrate after the step of step S50. The fifth sealing layer 462 seals the first to third anode electrodes 411, 412, 413, the first to third light-emitting layers 441, 443, 445, the first to third cathode electrodes 442, 444, 446, and the wiring layer 461. Thereby, when the substrate is exposed to the atmosphere, the first to third anode electrodes 411, 412, 413, the first to third light-emitting layers 441, 443, 445, the first to third cathode electrodes 442, 444, 446, and the wiring layer 461 are prevented from coming into contact with oxygen, moisture, etc.

[0106] As described above, according to the substrate processing method according to the second embodiment, three types of organic EL elements that emit light in red (R), green (G), and blue (B) can be formed on the substrate.

[0107] Further, according to the substrate processing method according to the second embodiment, in the photolithography process, the electrodes (the first to third anode electrodes 411, 412, 413, the first to third cathode electrodes 442, 444, 446) and the first to third light-emitting layers 441, 443, 445 are prevented from being deteriorated by moisture, oxygen, etc. Thereby, deterioration of the organic EL element can be suppressed and the lifetime can be extended.

[0108] Further, in the substrate processing method according to the first embodiment, after forming the fourth sealing layer on the cathode electrode, the fourth sealing layer, the light-emitting layer, and the electrode layer are removed from the entire electrode array other than one type of electrode among the plurality of anode electrodes by etching, and then the next photolithography process is performed. On the other hand, in the substrate processing method according to the second embodiment, after forming the fourth sealing layer on the cathode electrode, the next photolithography process is performed without removing the fourth sealing layer, the light-emitting layer, and the cathode electrode from the entire electrode array other than one type of electrode among the plurality of anode electrodes by etching.

[0109] Therefore, according to the substrate processing method according to the second embodiment, compared with the substrate processing method according to the first embodiment, the number of steps of the etching process can be reduced, and the productivity in the substrate processing for forming a plurality of types of organic EL elements can be further improved.

[0110] [Sealing laminate] In the first embodiment and the second embodiment, the process conditions and the film hardness when forming the first sealing layer, the second sealing layer, and the third sealing layer of the sealing laminates 320 and 420 will be described.

[0111] An example of the process conditions for controlling the hardness of the first sealing layer, the second sealing layer, and the third sealing layer is the pressure. By controlling the pressure in the processing chamber during the film formation of each of the first sealing layer, the second sealing layer, and the third sealing layer, the etching rate of each of the first sealing layer, the second sealing layer, and the third sealing layer may be controlled. The lower the pressure in the processing chamber during film formation is set, the harder the sealing layer is formed and the more difficult it is to be etched. The higher the pressure is set, the softer the sealing layer is formed and the easier it is to be etched.

[0112] Therefore, by controlling the pressure in the processing chamber during the film formation of the second sealing layer to be higher than the pressure in the processing chamber during the film formation of the third sealing layer, the second sealing layer can be made softer than the third sealing layer. That is, the etching rate of the second sealing layer can be made higher than the etching rate of the third sealing layer.

[0113] The pressure in the processing chamber during the film formation of the second sealing layer may be 100 mTorr (13.3 Pa) or more and 200 mTorr (26.6 Pa) or less. Also, the pressure in the processing chamber during the film formation of the third sealing layer may be 10 mTorr (1.33 Pa) or more and less than 100 mTorr (13.3 Pa). Thereby, an umbrella shape can be formed at the end of the sealing laminate with respect to the opening.

[0114] Another example of the process conditions for controlling the hardness of the first sealing layer, the second sealing layer, and the third sealing layer is the gas flow rate. For example, when the first sealing layer, the second sealing layer, and the third sealing layer are SiN films, SiH 4 gas and N 2 By controlling the flow rate ratio of the gas, the etching rate of each of the first sealing layer, the second sealing layer, and the third sealing layer may be controlled. N 2 The higher the flow rate of the SiH 4 gas relative to the N 2 gas, the harder the sealing layer is formed and the more difficult it is to etch. The lower the flow rate of the SiH 4 gas relative to the N

[0115] The flow rate ratio of the N 2 gas relative to the SiH 4 gas during the formation of the second sealing layer may be 1 or less. Also, the flow rate ratio of the N 2 gas relative to the SiH 4 gas during the formation of the third sealing layer may be greater than 1. Thereby, an umbrella shape can be formed at the end of the sealing laminate with respect to the opening.

[0116] The etching rate of the second sealing layer is higher than the etching rate of the third sealing layer. At this time, the etching rate of the third sealing layer may be higher than the etching rate of the first sealing layer. That is, the etching rate of the second sealing layer is the highest, followed by the etching rate of the third sealing layer, and the etching rate of the first sealing layer is the lowest.

[0117] By making the etching rate of the second sealing layer higher than the etching rate of the third sealing layer, an umbrella shape can be formed at the end of the sealing laminate with respect to the opening. Also, by forming the first sealing layer as a hard film with the lowest etching rate, the organic EL element disposed near the first sealing layer can be protected from moisture and the like.

[0118] However, the relationship between the etching rates of the respective sealing layers is not limited to this, and the sealing laminate may be formed such that the etching rate of the first sealing layer is equal to or higher than the etching rate of the third sealing layer, and the etching rate of the second sealing layer is higher than the etching rate of the first sealing layer.

[0119] Alternatively, the sealing laminate may be formed such that the etching rate of the second sealing layer is equal to or higher than the etching rate of the first sealing layer, and the etching rate of the first sealing layer is higher than the etching rate of the third sealing layer. Note that the process conditions described above may be combined in one or more ways.

[0120] [Etching Conditions for Light-Emitting Layer and Cathode Electrode] When etching the light-emitting layer and the cathode electrode on the sealing laminate, the fourth sealing layer on the laminate (organic EL element) is also etched. As an example, in FIG. 7, when etching the first light-emitting layer 341 and the first cathode electrode 342, the fourth c-sealing layer 453 on the first laminate (organic EL element) is also etched. The fourth sealing layer has a function of preventing moisture and oxygen from entering the organic EL element. Therefore, it is preferable to perform the etching process under process conditions where the etching rates of the light-emitting layer and the cathode electrode 446 are higher than the etching rate of the fourth sealing layer so as to leave as much of the fourth sealing layer as possible.

[0121] As an example of such process conditions, when etching the light-emitting layer and the cathode electrode, a mixed gas of H 2 gas and Ar gas, O 2 gas and Ar gas may be used as the etching gas.

[0122] In FIG. 29, when etching the third light-emitting layer 445 and the third cathode electrode 446 on the fourth sealing layer 452, the fourth sealing layer 453 on the third laminate (organic EL element) is also etched. When etching the second light-emitting layer 443 and the second cathode electrode 444 on the fourth sealing layer 451, the fourth sealing layer 452 on the second laminate (organic EL element) is also etched. When etching the first light-emitting layer 441 and the first cathode electrode 442 on the third sealing layer 423, the fourth sealing layer 451 on the first laminate (organic EL element) is also etched.

[0123] As an example of such process conditions, after etching using a gas capable of etching the fourth sealing layer 453, when the third light-emitting layer 445 and the third cathode electrode 446 are exposed, the gas is switched, and H 2 A mixed gas of gas and Ar gas, O 2 A mixed gas of gas and Ar gas may be used as the etching gas. After removing the third light-emitting layer 445 and the third cathode electrode 446, after etching using a gas capable of etching the fourth sealing layer 452, when the second light-emitting layer 443 and the second cathode electrode 444 are exposed, the gas is switched, and H 2 A mixed gas of gas and Ar gas, O 2 A mixed gas of gas and Ar gas may be used as the etching gas. After removing the second light-emitting layer 443 and the second cathode electrode 444, after etching using a gas capable of etching the fourth sealing layer 451, when the first light-emitting layer 441 and the first cathode electrode 442 are exposed, the gas is switched, and H 2 A mixed gas of gas and Ar gas, O 2 A mixed gas of gas and Ar gas may be used as the etching gas.

[0124] [Etching Conditions for Sealing Laminate] The high-frequency power for bias may be controlled as an etching condition of the sealing laminate (the first sealing layer, the second sealing layer, and the third sealing layer). For example, the high-frequency power for bias applied to the mounting table during the etching of the second sealing layer may be lower than the high-frequency power for bias applied to the mounting table during the etching of the third sealing layer. It is not necessary to apply the high-frequency power for bias during the etching of the second sealing layer. By applying low-power high-frequency power for bias or not applying the high-frequency power for bias during the etching of the second sealing layer, isotropic etching can be promoted, and it is easy to form an umbrella shape on the sealing laminate.

[0125] During the etching of the first sealing layer, low-power high-frequency power for bias may be supplied in the same manner as during the etching of the second sealing layer, or it is not necessary to supply the high-frequency power for bias. Thereby, it is possible to suppress or prevent the plasma used during the etching of the first sealing layer close to the anode electrode from damaging the anode electrode.

[0126] During the etching of the third sealing layer, higher high-frequency power for bias may be supplied than during the etching of the first sealing layer and the second sealing layer. Thereby, the etching rate of the third sealing layer can be increased, and productivity can be improved.

[0127] <First Substrate Processing System> Next, an example of the first substrate processing system 1 for implementing the substrate processing method according to the present embodiment will be described with reference to FIG. 32. FIG. 32 is an example of a plan view showing the configuration of the first substrate processing system 1.

[0128] The first substrate processing system 1 includes a first processing station (substrate processing apparatus) 11, a load lock module 12, a carrier station 14, a second processing station 15, and a control unit 20.

[0129] The first processing station 11 has a vacuum transfer module 30 and a plurality (three in the example of FIG. 32) of processing modules 40a, 40b.

[0130] The vacuum transfer module 30 has a vacuum transfer chamber 31 in which the interior is maintained in a reduced pressure state (vacuum state). Inside the vacuum transfer chamber 31, a transfer mechanism 32 for transferring the substrate G is provided. The transfer mechanism 32 transfers the substrate G into and out of the processing modules 40a and 40b (specifically, the vacuum processing chambers 41a and 41b) and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 32 has a transfer arm 32a that supports the substrate G during transfer.

[0131] The processing modules 40a and 40b have vacuum processing chambers 41a and 41b, and perform predetermined processing on the substrate G under reduced pressure. The vacuum processing chambers 41a and 41b are connected to the vacuum transfer chamber 31 via gate valves G1. Each of the processing modules 40a performs a sealing layer formation process and an etching process, respectively. Each of the processing modules 40b performs a light emitting layer formation process, a cathode electrode formation process, and a wiring layer formation process, respectively. When the processing module 40b performs processing in a face-down manner, it may include an inverter for inverting the substrate G.

[0132] The load lock module 12 that connects the first processing station 11 and the carrier station 14 has a load lock chamber 13 configured to be able to switch the interior between an atmospheric pressure state and a vacuum state. The load lock chamber 13 is connected to the vacuum transfer chamber 31 via a gate valve G2. The load lock chamber 13 is connected to the atmospheric transfer chamber 51 via a gate valve G3.

[0133] The load lock module 12 that connects one vacuum transfer module 30 and the other vacuum transfer module 30 has a load lock chamber 13 configured to be able to switch the vacuum state inside. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of one vacuum transfer module 30 via one gate valve G2. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of the other vacuum transfer module 30 via the other gate valve G2.

[0134] A carrier station 14 has a carrier C that can accommodate a plurality of substrates G carried in and out. The carrier station 14 also has an air conveyance chamber 51 in which the interior is maintained at atmospheric pressure. Inside the air conveyance chamber 51, a conveyance mechanism 52 for conveying the substrate G is provided. The conveyance mechanism 52 conveys the substrate G in and out between the carrier C placed on the carrier mounting table 53 and the load lock module 12 (specifically, the load lock chamber 13). The conveyance mechanism 52 has a conveyance arm 52a that supports the substrate G during conveyance.

[0135] The second processing station 15 has an air conveyance module 60 and a plurality (three in the example of FIG. 32) of processing modules 70.

[0136] The air conveyance module 60 has an air conveyance chamber 61 in which the interior is maintained at an air atmosphere. Inside the air conveyance chamber 61, a conveyance mechanism 62 for conveying the substrate G is provided. The conveyance mechanism 62 conveys the substrate G in and out with respect to the processing module 70 (specifically, the air processing chamber 71). The conveyance mechanism 62 has a conveyance arm 62a that supports the substrate G during conveyance.

[0137] The processing module 70 has an air processing chamber 71 and performs a predetermined process on the substrate G under atmospheric pressure. The air processing chamber 71 is connected to the air conveyance chamber 61 via a gate valve G4. Each of the processing modules 70 performs each of the processes of photolithography processing (resist formation process, exposure process, and development process).

[0138] Note that the air conveyance chamber 51 of the carrier station 14 and the air conveyance chamber 61 of the second processing station 15 may be connected by a pass module (not shown) and configured to be able to convey the substrate G between the air conveyance chamber 51 and the air conveyance chamber 61. Further, the air conveyance chamber 61 of the second processing station 15 may have a carrier mounting table (not shown) and be configured to be able to convey the substrate G between the air conveyance chamber 51 and the air conveyance chamber 61 by conveying the carrier C in which the substrate G is accommodated.

[0139] The control unit 20 includes a computer having a processor such as a CPU and a memory, and has a storage unit (not shown) that stores various types of information. A program including instructions for a processing sequence executed by the first substrate processing system 1 is stored in the storage unit. Note that the program may be recorded on a computer-readable storage medium and installed from the storage medium into the control unit 20. Further, the storage medium may be temporary or non-temporary.

[0140] With such a configuration, in the substrate processing method according to the first embodiment (see FIG. 1), in the steps excluding step S3, step S9, and step S15, the substrate G is conveyed through the vacuum transfer chamber 31 and the load lock chamber 13 between the vacuum transfer chambers 31. Thereby, the substrate G can be processed without being exposed to the atmosphere. Thereby, it is possible to suppress the deterioration of the organic EL element due to moisture, oxygen, or the like.

[0141] Further, in the substrate processing method according to the second embodiment (see FIG. 18), in the steps excluding step S33, step S38, and step S43, the substrate G is conveyed through the vacuum transfer chamber 31 and the load lock chamber 13 between the vacuum transfer chambers 31. Thereby, the substrate G can be processed without being exposed to the atmosphere. Thereby, it is possible to suppress the deterioration of the organic EL element due to moisture, oxygen, or the like.

[0142] That is, the first processing station 11 includes a vacuum processing chamber 41a (sealing layer formation processing module) that performs a sealing layer formation process, a vacuum processing chamber 41a (etching processing module) that performs an etching process, a vacuum processing chamber 41b (light emitting layer formation processing module) that performs a light emitting layer formation process, a vacuum processing chamber 41b (electrode layer formation processing module) that performs a cathode electrode layer formation process, a vacuum processing chamber 41b (wiring layer formation processing module) that performs a wiring layer formation process, and a vacuum transfer chamber 31 (vacuum transfer module) that connects these. The substrate G on which the anode electrode is formed is transferred from the load lock chamber 13 to the first processing station 11. First, the substrate G is transferred to the vacuum processing chamber 41a that performs the sealing layer formation process, and a process for forming the sealing layer (for example, step S2) is performed. Specifically, a film of the sealing laminate of the first sealing layer, the second sealing layer, and the third sealing layer is formed. After the film of the sealing laminate is formed on the substrate G, it is unloaded from the load lock chamber 13 and transferred to the processing module 70 via the atmospheric transfer module 60, and a photolithography process (for example, step S3) is performed. Next, the substrate G is transferred to the vacuum processing chamber 41a that performs the etching process via the load lock chamber 13 and the vacuum transfer chamber 31, and an etching process (for example, step S4) is performed. Next, the substrate G is transferred to the vacuum processing chamber 41b that performs the formation processes of the light emitting layer and the cathode electrode via the vacuum transfer chamber 31, and the formation processes of the light emitting layer and the cathode electrode (for example, steps S5 and S6) are performed. Next, the substrate G is transferred to the vacuum processing chamber 41a that performs the sealing layer formation process, and a sealing layer formation process (for example, step S7) is performed. Next, the substrate G is transferred to the vacuum processing chamber 41a that performs the etching process, and an etching process (for example, step S8) is performed. After such processes are repeated (for example, steps S9 to S20), the substrate G is transferred to the vacuum processing chamber 41b that forms the wiring layer, and a wiring layer formation process (for example, step S21) is performed in the vacuum processing chamber 41b that forms the wiring layer. Finally, the substrate G is transferred to the vacuum processing chamber 41a that performs the sealing layer formation process, and a process for forming the sealing layer (for example, step S22) is performed. Note that the substrate G may be loaded and unloaded from either of the two load lock chambers 13 connected to the carrier station 14. The temperatures of the vacuum processing chambers 41a and 41b are controlled to 100°C or lower.This is because when the temperature is above 100 °C, the light-emitting layer is damaged and the light-emitting function deteriorates or is lost.

[0143] Some organic EL layer materials used in organic EL elements are liable to deteriorate due to moisture, oxygen, etc., such as organic compounds. In contrast, in the first substrate processing system 1, film formation of the light-emitting layer, the sealing layer, etc. and etching of various films are performed without being exposed to the atmosphere within the first substrate processing system 1. Thereby, while suppressing the influence of moisture, oxygen, etc., photolithography processing for a laminate including a specific type of organic EL layer is reduced at one time, and the processing difficulty of the umbrella shape of the organic EL element (pixel portion) is reduced, productivity is improved, and an organic EL element can be manufactured while suppressing the manufacturing cost.

[0144] <Second Substrate Processing System> Next, an example of a second substrate processing system 101 for implementing the substrate processing method according to the present embodiment will be described with reference to FIG. 33. FIG. 33 is an example of a plan view showing the configuration of the second substrate processing system 101.

[0145] The second substrate processing system 101 includes first processing stations (substrate processing apparatuses) 111a to 111d, load lock modules 112a to 112e, carrier stations 114a and 114b, a second processing station 115, and a control unit 120.

[0146] The first processing station 111a has a vacuum transfer module 130a and a plurality (two in the example of FIG. 33) of processing modules 140a.

[0147] The vacuum transfer module 130a has a vacuum transfer chamber 131a in which the interior is kept in a reduced pressure state (vacuum state). In the vacuum transfer chamber 131a, a transfer mechanism 132a for transferring the substrate G is provided. The transfer mechanism 132a transfers the substrate G into and out of the processing module 140a (specifically, the vacuum processing chamber 141a) and the load lock modules 112a and 112b (specifically, the load lock chambers 113a and 113b). The transfer mechanism 132a has a transfer arm 132a1 that supports the substrate G during transfer.

[0148] The processing module 140a has a vacuum processing chamber 141a and performs a predetermined process on the substrate G under reduced pressure. The vacuum processing chamber 141a is connected to the vacuum transfer chamber 131a via a gate valve G101a. Each of the processing modules 140a performs a sealing layer formation process.

[0149] The first processing station 111b has a vacuum transfer module 130b and a plurality (two in the example of FIG. 33) of processing modules 140b.

[0150] The vacuum transfer module 130b has a vacuum transfer chamber 131b in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132b for transferring the substrate G is provided in the vacuum transfer chamber 131b. The transfer mechanism 132b transfers the substrate G into and out of the processing module 140b (specifically, the vacuum processing chamber 141b) and the load lock modules 112b, 112c (specifically, the load lock chambers 113b, 113c). The transfer mechanism 132b has a transfer arm 132b1 that supports the substrate G during transfer.

[0151] The processing module 140b has a vacuum processing chamber 141b and performs a predetermined process on the substrate G under reduced pressure. The vacuum processing chamber 141b is connected to the vacuum transfer chamber 131b via a gate valve G101b. Each of the processing modules 140b performs an etching process.

[0152] The first processing station 111c has a vacuum transfer module 130c and a plurality (two in the example of FIG. 33) of processing modules 140c.

[0153] The vacuum transfer module 130c has a vacuum transfer chamber 131c in which the interior is maintained in a reduced pressure state (vacuum state). Inside the vacuum transfer chamber 131c, a transfer mechanism 132c for transferring the substrate G is provided. The transfer mechanism 132c transfers the substrate G into and out of the processing module 140c (specifically, the vacuum processing chamber 141c) and the load lock modules 112c, 112d (specifically, the load lock chambers 113c, 113d). The transfer mechanism 132c has a transfer arm 132c1 that supports the substrate G during transfer.

[0154] The processing module 140c has a vacuum processing chamber 141c and performs a predetermined process on the substrate G under reduced pressure. Further, the vacuum processing chamber 141c is connected to the vacuum transfer chamber 131c via a gate valve G101c. Each of the processing modules 140c performs a formation process of a light-emitting layer. When the processing module 140b performs processing in a face-down manner, it may include an inverter that inverts the substrate G.

[0155] The first processing station 111d has a vacuum transfer module 130d and a plurality (two in the example of FIG. 33) of processing modules 140d.

[0156] The vacuum transfer module 130d has a vacuum transfer chamber 131d in which the interior is maintained in a reduced pressure state (vacuum state). Inside the vacuum transfer chamber 131d, a transfer mechanism 132d for transferring the substrate G is provided. The transfer mechanism 132d transfers the substrate G into and out of the processing module 140d (specifically, the vacuum processing chamber 141d) and the load lock modules 112d, 112e (specifically, the load lock chambers 113d, 113e). The transfer mechanism 132d has a transfer arm 132d1 that supports the substrate G during transfer.

[0157] The processing module 140d has a vacuum processing chamber 141d and performs a predetermined process on the substrate G under reduced pressure. The vacuum processing chamber 141d is connected to the vacuum transfer chamber 131d via a gate valve G101d. Each of the processing modules 140d performs a cathode electrode formation process and a wiring layer formation process. When the processing module 140d performs the process in the face-down method, it may include an inverter that inverts the substrate G.

[0158] The load lock module 112a has a load lock chamber 113a configured to be able to switch the interior between an atmospheric pressure state and a vacuum state. The load lock module 112a connects the first processing station 111a and the carrier station 114a. The load lock chamber 113a is connected to the vacuum transfer chamber 131a via a gate valve G102a. The load lock chamber 113a is connected to the atmospheric transfer chamber 151a via a gate valve G103a.

[0159] The load lock module 112b has a load lock chamber 113b configured to be able to switch the vacuum state inside. The load lock module 112b connects the first processing station 111a and the first processing station 111b. The load lock chamber 113b is connected to the vacuum transfer chamber 131b via a gate valve G102b. The load lock chamber 113b is connected to the vacuum transfer chamber 131a via a gate valve G103b.

[0160] The load lock module 112c has a load lock chamber 113c configured to be able to switch the vacuum state inside. The load lock module 112c connects the first processing station 111b and the first processing station 111c. The load lock chamber 113c is connected to the vacuum transfer chamber 131c via a gate valve G102c. The load lock chamber 113c is connected to the vacuum transfer chamber 131b via a gate valve G103c.

[0161] The load lock module 112d has a load lock chamber 113d configured to be able to switch the indoor vacuum state. Also, the load lock module 112d connects the first processing station 111c and the first processing station 111d. The load lock chamber 113d is connected to the vacuum transfer chamber 131d via the gate valve G102d. The load lock chamber 113d is connected to the vacuum transfer chamber 131c via the gate valve G103d.

[0162] The load lock module 112e has a load lock chamber 113e configured to be able to switch the indoor state between atmospheric pressure and vacuum. Also, the load lock module 112e connects the first processing station 111d and the carrier station 114b. The load lock chamber 113e is connected to the atmospheric transfer chamber 151b via the gate valve G102e. The load lock chamber 113e is connected to the vacuum transfer chamber 131d via the gate valve G103e.

[0163] In the carrier station 114a, a carrier C capable of accommodating a plurality of substrates G is carried in and out. Also, the carrier station 114a has an atmospheric transfer chamber 151a in which the indoor is maintained at atmospheric pressure. In the atmospheric transfer chamber 151a, a transfer mechanism 152a for transferring the substrate G is provided. The transfer mechanism 152a transfers the substrate G between the carrier C placed on a carrier mounting table (not shown) and the load lock module 112a (specifically, the load lock chamber 113a). The transfer mechanism 152a has a transfer arm 152a1 that supports the substrate G during transfer.

[0164] A carrier station 114b has a carrier C that can accommodate a plurality of substrates G carried in and out. The carrier station 114b also has an air conveyance chamber 151b in which the interior is maintained at atmospheric pressure. Inside the air conveyance chamber 151b, a conveyance mechanism 152b for conveying the substrate G is provided. The conveyance mechanism 152b conveys the substrate G in and out between the carrier C placed on a carrier mounting table (not shown) and the load lock module 112e (specifically, the load lock chamber 113e). The conveyance mechanism 152b has a conveyance arm 152b1 that supports the substrate G during conveyance.

[0165] The second processing station 115 has an air conveyance module 160 and a plurality (three in the example of FIG. 33) of processing modules 170.

[0166] The air conveyance module 160 has an air conveyance chamber 161 in which the interior is maintained at an air atmosphere. Inside the air conveyance chamber 161, a conveyance mechanism 162 for conveying the substrate G is provided. The conveyance mechanism 162 conveys the substrate G in and out with respect to the processing module 170 (specifically, the air processing chamber 171). The conveyance mechanism 162 has a conveyance arm 162a that supports the substrate G during conveyance.

[0167] The processing module 170 has an air processing chamber 171 and performs a predetermined process on the substrate G under atmospheric pressure. The air processing chamber 171 is connected to the air conveyance chamber 161 via a gate valve G104. Each of the processing modules 170 performs each of the processes of photolithography processing (resist formation process, exposure process, and development process).

[0168] Note that the atmospheric transfer chambers 151a and 151b of the carrier stations 114a and 114b and the atmospheric transfer chamber 161 of the second processing station 115 may be connected by a path module (not shown) and may be configured to transfer the substrate G between the atmospheric transfer chambers 151a and 151b and the atmospheric transfer chamber 161. Further, the atmospheric transfer chamber 161 of the second processing station 115 may have a carrier mounting table (not shown) and may be configured to transfer the substrate G between the atmospheric transfer chambers 151a and 151b and the atmospheric transfer chamber 161 by transferring the carrier C in which the substrate G is accommodated.

[0169] The control unit 120 includes a computer equipped with a processor such as a CPU and a memory, and has a storage unit (not shown) that stores various information. A program including instructions for a processing sequence executed by the second substrate processing system 101 is stored in the storage unit. Note that the program may be recorded on a computer-readable storage medium and installed from the storage medium into the control unit 120. Further, the storage medium may be temporary or non-temporary.

[0170] That is, the first processing stations 111a to 111d include a vacuum processing chamber 141a (sealing layer formation processing module) that performs a sealing layer formation process, a vacuum processing chamber 141b (etching processing module) that performs an etching process, a vacuum processing chamber 141c (light emitting layer formation processing module) that performs a light emitting layer formation process, a vacuum processing chamber 141d (electrode layer formation processing module, wiring layer formation processing module) that performs a cathode electrode and wiring layer formation process, and vacuum transfer chambers 131a to 131d that connect these.

[0171] The substrate G on which the anode electrode is formed is transported from the load lock chamber 113a to the first processing station 111a. First, the substrate G is transported to a vacuum processing chamber 141a for forming a sealing layer, and a sealing layer forming process (for example, step S2) is performed. Specifically, a sealing laminate of a first sealing layer, a second sealing layer, and a third sealing layer is formed. After the formation of the sealing laminate on the substrate G, it is unloaded from the load lock chamber 113a and transported to the processing module 170 via the atmospheric transport module 160, and a photolithography process (for example, step S3) is performed. Next, the substrate G is transported to a vacuum processing chamber 141b for etching through the load lock chamber 113a and the vacuum transport chamber 131b, and an etching process (for example, step S4) is performed. Next, the substrate G is transported to a vacuum processing chamber 141c for forming a light-emitting layer through the vacuum transport chamber 131c, and a light-emitting layer forming process (for example, step S5) is performed. Next, the substrate G is transported to a vacuum processing chamber 141d for forming a cathode electrode through the vacuum transport chamber 131d, and a cathode electrode forming process (for example, step S6) is performed. Next, the substrate G is transported to the vacuum processing chamber 141a for forming a sealing layer, and a sealing layer forming process (for example, step S7) is performed. Next, the substrate G is transported to the vacuum processing chamber 141b for etching, and an etching process (for example, step S8) is performed. After such a first process is repeated (for example, steps S9 to S20), the substrate G is transported to a vacuum processing chamber 141d for forming a wiring layer, and a wiring layer forming process (for example, step S21) is performed. Finally, the substrate G is transported to the vacuum processing chamber 141a for forming a sealing layer, and a process for forming a sealing layer (for example, step S22) is performed. In this embodiment, the substrate G is loaded from the load lock chamber 113a, but it may be loaded and unloaded from either of the load lock chambers 113a and 113e. The temperatures of the vacuum processing chambers 141a to 141d are controlled to 100°C or lower. This is because the light-emitting layer is damaged at 100°C or higher, and the light-emitting function deteriorates or is lost.

[0172] <Substrate Processing Apparatus> Next, an example of the processing module 40a that implements the substrate processing methods according to the first and second embodiments will be described with reference to FIG. 34. FIG. 34 is an example of a cross-sectional schematic view showing the configuration of the processing module 40a according to the present embodiment. Since the processing modules 140a and 140b may have the same configuration as the processing module 40a, the configuration example of the processing module 40a will be described here.

[0173] The processing module 40a has a processing container 290. The processing container 290 is made of a metal such as aluminum and is grounded. An opening is formed on the upper surface of the processing container 290. This opening is sealed by a rectangular metal window 220. The space surrounded by the processing container 290 and the metal window 220 is a processing space K1 where the substrate G is located during plasma processing. The space above the metal window 220 is an antenna chamber K2 where the high-frequency antenna 295 is disposed. On the processing space K1 side, a transfer port for transferring the substrate G and a gate valve (both not shown) for opening and closing the transfer port are provided.

[0174] A mounting table 230 is provided at the lower part of the processing space K1. The mounting table 230 has a main body 231 composed of a base 231a and an electrostatic chuck 231b for electrostatically adsorbing the substrate G. The main body 231 is installed at the bottom of the processing container 290 via legs 232.

[0175] An RF bias power supply 241 is connected to the base 231a via a matcher 240. The RF bias power supply 241 supplies high-frequency power of, for example, 3.2 MHz as bias high-frequency power to the base 231a. Thereby, ions in the plasma generated in the processing space K1 can be drawn into the substrate G.

[0176] An exhaust port 291 is formed at the bottom of the processing container 290, and an exhaust device 250 having a vacuum pump or the like is connected to the exhaust port 291. The inside of the processing container 290 is depressurized by the exhaust device 250.

[0177] An aluminum or other metal frame 280 is disposed on the outer periphery of the metal window 220 via an insulating member 223. The metal frame 280 is located on the upper surface side of the side wall of the processing container 290, and a seal member 211 for keeping the processing space K1 airtight is provided between the processing container 290 and the metal frame 280. The metal window 220 is electrically insulated from the metal frame 280 by the insulating member 223.

[0178] The chamber defined by the processing container 290, the metal window 220, and the metal frame 280 constitutes the vacuum processing chamber 41a of FIG. 32 and the vacuum processing chambers 141a and 141b of FIG. 32. The metal window 220 has a gas hole 221 and a diffusion chamber 222, and functions as a shower head for supplying gas to the processing space K1. The diffusion chamber 222 is connected to an etching gas supply unit 200 to 202, a film forming gas supply unit 203, and an ashing gas supply unit 204 via a supply pipe 210. Note that the metal window 220 may be divided into a plurality of divided windows.

[0179] The etching gas supply unit 200 supplies an etching gas for a sealing layer (inorganic insulating film). The etching gas supply unit 201 supplies an etching gas for a cathode electrode. The etching gas supply unit 202 supplies an etching gas for a light emitting layer. The film forming gas supply unit 203 supplies a film forming gas for a sealing layer (inorganic insulating film). The ashing gas supply unit 204 supplies an ashing gas for a resist mask.

[0180] The etching gas supply units 200 to 202, the film forming gas supply unit 203, and the ashing gas supply unit 204 each have an on-off valve (not shown) for switching the start and stop of gas supply, a flow controller (not shown) for adjusting the gas flow rate to be supplied, and the like. When the etching gas supply units 200 to 202, the film forming gas supply unit 203, and the ashing gas supply unit 204 supply a mixed gas in which a plurality of types of gases are mixed, they are configured to be able to adjust the mixing ratio. Note that a purge gas unit (not shown) for supplying a purge gas such as an inert gas is also connected to the diffusion chamber 222.

[0181] The high-frequency antenna 295 is disposed at a distance from the metal window 220 via a spacer (not shown) formed of an insulating material. An RF source power supply 243 is connected to the high-frequency antenna 295 via a matcher 242. The RF source power supply 243 supplies high-frequency power of, for example, 13.56 MHz as the high-frequency power for the source to the high-frequency antenna 295. Thereby, during plasma processing, an induced electric field is formed inside the processing space K1 via the metal window 220, and the gas introduced from the gas hole 221 is plasmaized by the induced electric field.

[0182] When forming the sealing laminates 320 and 420, the pressure inside the processing vessel 290 may be controlled as follows by the supply of gas and the evacuation by the gas supply and evacuation device 250. For example, the pressure inside the processing vessel 290 during the film formation of the second sealing layer may be controlled to be 100 mTorr (13.3 Pa) or more and 200 mTorr (26.6 Pa) or less, and the pressure inside the processing vessel 290 during the film formation of the second sealing layer may be controlled to be 10 mTorr (1.33 Pa) or more and less than 100 mTorr (13.3 Pa).

[0183] When forming the sealing laminates 320 and 420, the gas flow rate may be controlled as follows. For example, the flow rate ratio of SiH 2 gas to N 4 gas during the film formation of the second sealing layer is controlled to be 1 or less, and the flow rate ratio of SiH 2 gas to N 4 gas during the film formation of the third sealing layer may be controlled to be a value greater than 1.

[0184] When etching the sealing laminates 320 and 420, the high-frequency power for bias supplied from the RF bias power supply 241 may be controlled. During the etching of the second sealing layer, high-frequency power for bias at a lower power than during the etching of the third sealing layer may be supplied. During the etching of the first sealing layer, high-frequency power for bias at approximately the same power as during the etching of the second sealing layer may be supplied.

[0185] In this embodiment, an inductively coupled plasma apparatus having a metal window 220 has been described as the substrate processing apparatus. However, the present invention is not limited thereto, and an inductively coupled plasma apparatus having a dielectric window instead of the metal window 220 may be used. Further, the plasma generation method applied to the substrate processing apparatus is not limited to inductively coupled plasma, and a substrate processing apparatus using other plasma generation methods such as capacitively coupled plasma or microwave plasma may be used.

[0186] As described above, according to the first and second embodiments, a substrate processing method and a substrate processing system for improving productivity are provided.

[0187] The substrate processing method and the substrate processing system according to the embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above-described plurality of embodiments can also adopt other configurations and can be combined within a non-contradictory range.

Explanation of Reference Numerals

[0188] 1 First substrate processing system 101 Second substrate processing system 11, 111a~111d First processing station 12, 112a~112e Load lock module 13, 113a~113e Load lock chamber 14, 114a~114b Carrier station 15, 115 Second processing station 20, 120 Control unit 30, 130a~130d Vacuum transfer module 31, 131a~131d Vacuum transfer chamber 32, 132a~132d Transfer mechanism 32a, 132a1~132d1 Transfer arm 40a, 40b, 140a~140d Processing module Vacuum processing chambers 41a, 41b, 141a to 141d Atmospheric transfer chambers 51, 151a to 151b Transfer mechanisms 52, 152a to 152b Transfer arms 52a, 152a1 to 152b1 Carrier mounting table 53 Atmospheric transfer modules 60, 160 Atmospheric transfer chambers 61, 161 Transfer mechanisms 62, 162 Transfer arms 62a, 162a Processing modules 70, 170 Atmospheric processing chambers 71, 171 Gate valves G1 to G4, G101a to G104 Substrate G Carrier C Base material 300 Electrode array 310 First anode electrode 311 Second anode electrode 312 Third anode electrode 313 Sealing laminate 320 First sealing layer 321 Second sealing layer 322 Third sealing layer 323 Opening 324 Opening 325 Opening 326 First mask 331 Second mask 332 Third mask 333 First light-emitting layer 341 Second light-emitting layer 343 Third light-emitting layer 345 First cathode electrode 342 Second cathode electrode 344 Third cathode electrode 346 Fourth a sealing layer 351 Fourth b sealing layer 352 Fourth c sealing layer 353 Wiring layer 361 Fifth sealing layer 362 Base material 400 Electrode array 410 411 First Anode Electrode 412 Second Anode Electrode 413 Third Anode Electrode 420 Sealing Laminate 421 First Sealing Layer 422 Second Sealing Layer 423 Third Sealing Layer 424 Opening 425 Opening 426 Opening 431 First Mask 432 Second Mask 433 Third Mask 441 First Light-Emitting Layer 443 Second Light-Emitting Layer 445 Third Light-Emitting Layer 442 First Cathode Electrode 444 Second Cathode Electrode 446 Third Cathode Electrode 451 Fourth a Sealing Layer 452 Fourth b Sealing Layer 453 Fourth c Sealing Layer 461 Wiring Layer 462 Fifth Sealing Layer

Claims

1. (A)Preparing a substrate having an electrode array in which a plurality of electrodes are disposed on the substrate surface; (B)A sealing laminate having three or more sealing layers laminated in the order of a first sealing layer, a second sealing layer, and a third sealing layer over the entire electrode array, and forming the sealing laminate such that an etching rate of the second sealing layer is higher than an etching rate of the third sealing layer; (C)Forming a mask over the sealing laminate where one type of electrode among the plurality of electrodes is not disposed; (D)Etching the substrate using the mask to form an umbrella shape at an end of the sealing laminate with respect to an opening such that the one type of electrode is exposed; (E)After (D), forming a light-emitting layer and an electrode layer over the entire electrode array; A substrate processing method including the above.

2. The sealing laminate is made of any one or a combination of a plurality of SiN, SiON, SiO, and AlO, The substrate processing method according to Claim 1.

3. In (B), forming the sealing laminate such that an etching rate of the third sealing layer is higher than an etching rate of the first sealing layer, The substrate processing method according to Claim 1 or Claim 2.

4. In (B), forming the sealing laminate such that an etching rate of the first sealing layer is equal to or higher than an etching rate of the third sealing layer and an etching rate of the second sealing layer is higher than an etching rate of the first sealing layer, The substrate processing method according to Claim 1 or Claim 2.

5. In (B), forming the sealing laminate such that an etching rate of the second sealing layer is equal to or higher than an etching rate of the first sealing layer and an etching rate of the first sealing layer is higher than an etching rate of the third sealing layer, The substrate processing method according to Claim 1 or Claim 2.

6. In (B), controlling etching rates of the first sealing layer, the second sealing layer, and the third sealing layer by controlling pressures in a processing container during film formation of the first sealing layer, the second sealing layer, and the third sealing layer, respectively, The substrate processing method according to Claim 1 or Claim 2.

7. In (B), controlling such that a pressure in the processing container during film formation of the second sealing layer is higher than a pressure in the processing container during film formation of the third sealing layer, The substrate processing method according to Claim 6.

8. The pressure in the processing chamber during the formation of the second sealing layer is 100 mTorr (13.3 Pa) or more and 200 mTorr (26.6 Pa) or less, and the pressure in the processing chamber during the formation of the third sealing layer is 10 mTorr (1.33 Pa) or more and less than 100 mTorr (13.3 Pa), The substrate processing method according to claim 7.

9. The first sealing layer, the second sealing layer, and the third sealing layer are made of SiN, In the above (B), by controlling the flow rate ratio of the SiH ４ gas and N ２ gas, the etching rate of each of the first sealing layer, the second sealing layer, and the third sealing layer is controlled. The substrate processing method according to claim 2.

10. In the above (B), N during the formation of the second sealing layer ２ The flow rate ratio of SiH ４ gas to N during the formation of the third sealing layer ２ The flow rate ratio of SiH ４ gas is controlled to be smaller than the flow rate ratio of gas The substrate processing method according to claim 9.

11. The flow rate ratio of SiH ２ gas to the N ４ gas during the formation of the second sealing layer is 1 or less, The N during the film formation of the third sealing layer ２ The flow rate ratio of SiH ４ gas to the gas is greater than 1, The substrate processing method according to claim 10.

12. (F) After the step (E), a fourth sealing layer is formed on the electrode layer, and the sealing laminate is formed on the entire electrode array other than the one type of electrode among the plurality of electrodes; After the step (F), by repeating the steps (C) to (F) with another type of electrode among the plurality of electrodes as one type of electrode, a laminate array in which a laminate formed by the first sealing layer, the light-emitting layer emitting a plurality of different colors, and the electrode layer is exposed is formed. The substrate processing method according to claim 1 or claim 2.

13. In the step (F), after forming the fourth sealing layer on the electrode layer, the fourth sealing layer, the light-emitting layer, and the electrode layer are removed from the entire electrode array other than the one type of electrode among the plurality of electrodes by etching, and then the step (C) is performed. The substrate processing method according to claim 12.

14. In the step (F), after forming the fourth sealing layer on the electrode layer, the step (C) is performed without removing the fourth sealing layer, the light-emitting layer, and the electrode layer from the entire electrode array other than the one type of electrode among the plurality of electrodes by etching. The substrate processing method according to claim 12.

15. The electrode array includes three types of the electrodes. The substrate processing method according to claim 12.

16. The three types of the electrodes include the electrode having the light-emitting layer emitting red light, the electrode having the light-emitting layer emitting blue light, and the electrode having the light-emitting layer emitting green light. The substrate processing method according to claim 15.

17. The mask is a photoresist mask. The substrate processing method according to claim 1 or claim 2.

18. In (B) above, the high-frequency power for bias applied to the mounting table in the processing container during the etching of the second sealing layer is lower than the high-frequency power for bias applied to the mounting table during the etching of the third sealing layer. The substrate processing method according to claim 1 or claim 2.

19. In (D) above, the etching gas to be supplied is a fluorine-containing gas. The substrate processing method according to claim 1 or claim 2.

20. A sealing laminate having an electrode array in which a plurality of electrodes are arranged on the substrate surface, and having three or more sealing layers laminated in the order of a first sealing layer, a second sealing layer, and a third sealing layer on the entire electrode array. Among the sealing laminates formed such that the etching rate of the second sealing layer is higher than the etching rate of the third sealing layer, a substrate processing apparatus having a mask on the sealing laminate where one type of electrode among the plurality of electrodes is not arranged, An etching processing module that forms an umbrella shape at the end of the sealing laminate with respect to the opening so that the one type of electrode is exposed by etching the substrate using the mask. A light-emitting layer forming processing module that forms a light-emitting layer on the entire electrode array after the opening is formed. An electrode layer forming processing module that forms an electrode layer on the substrate on which the light-emitting layer is formed. A sealing layer forming processing module that forms a fourth sealing layer on the substrate on which the light-emitting layer and the electrode layer are formed. Comprising a vacuum transfer module that connects the etching processing module, the light-emitting layer forming processing module, the electrode layer forming processing module, and the sealing layer forming processing module. Substrate processing system.

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