High-brightness OLED display device, preparation method thereof and display apparatus

Abstract

To provide a high-brightness OLED display device, a preparation method thereof and a display apparatus, which relate to the technical field of OLED display.SOLUTION: A high-brightness OLED display device includes a substrate and an optical microcavity structure on the substrate, the optical microcavity structure includes an R optical microcavity area, a G optical microcavity area and a B optical microcavity area. A cavity length of the G optical microcavity area is greater than that of the B optical microcavity region and is smaller than that of the R optical microcavity area. The beneficial effects of the present invention are that RGB pixels can independently emit corresponding spectrums without the help of CF, realizing colorization control of silicon-based products, and improving light extraction efficiency and product yield.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to the technical field of OLED displays, and in particular, to high-brightness OLED display devices, their manufacturing methods, and display devices.

Background Art

[0002] There are mainly three methods for OLED colorization technology: RGB-SBS (RGB pixel juxtaposition method, Side-By-Side), W+CF (color filter method, also called "white light + color filter" method), and CCM (COLOR conversion method). Currently, most silicon-based OLED full-color products adopt the first two methods.

[0003] When the WOLED (white OLED) + CF (color filter) technology is adopted for silicon-based OLED full-color products, by using CMM (Common Metal Mask) to deposit a film layer on the entire surface, 2000 - 3000 PPI can be achieved. The drawback is that the optical microcavity of the evaporation part cannot be independently controlled, and it is necessary to use a color film process to realize RGB emission. As a result, about 70% of light emission loss occurs. When the brightness of the product exceeds 5000 nit, the product requirements cannot be met.

[0004] When silicon-based OLED full-color products adopt the RGB-SBS process route, independent microcavity control of the R, G, and B light-emitting materials can be achieved, so the performance (efficiency, lifespan, etc.) of the entire OLED device can be optimized. The film layer deposited with one metal mask FMM (Fine metal mask) can achieve 2000 - 3000 PPI. However, since the aperture of one pixel of the metal mask FMM is only 6 - 10um and the PDL Gap is only 2 - 4um, when the FMM is deposited about 10 times, the problem of hole blocking will occur. At the same time, in the conventional RGB-SBS process route deposition, 6 FMM operations are required, resulting in a decrease in product yield.

[0005] Therefore, current silicon-based OLED full-color products have the following problems. 1) In the W + CF process, when the RGB light-emitting layers emit light simultaneously, the WOLED device cannot emit light with an independent spectrum. Therefore, in order to achieve RGB independent emission and colorization control, it is necessary to use CF (color filter), resulting in increased light emission loss and decreased light emission efficiency. 2) In the RGB-SBS process, when silicon-based products achieve high brightness, due to the small aperture of a single pixel, after the FMM is deposited about 10 times, the problem of hole blocking occurs, and the product yield is low.

[0006] For example, the patent document with publication number CN104241332A discloses a white light OLED display and its packaging method. The white light OLED display includes a glass cover plate, a color filter layer coated on the glass cover plate, a transparent protective layer covering the color filter layer, a desiccant layer disposed on the transparent protective layer, and a TFT substrate including a white light OLED layer. The color filter layer, the transparent protective layer, and the desiccant layer are sandwiched between the glass cover plate and the TFT substrate including the white light OLED layer. Summary of the Invention Problems to be Solved by the Invention

[0007] Since the RGB light-emitting layers of the OLED display emit light simultaneously, they still cannot emit spectra independently. Therefore, it is necessary to use a CF (color filter) to achieve RGB independent emission, which increases light emission loss and reduces light emission efficiency. Thus, the problems described in the present invention cannot be solved.

Means for Solving the Problems

[0008] In order to solve the above technical problems, the present invention provides a high-brightness OLED display device, a manufacturing method thereof, and a display device, so that RGB pixels can emit corresponding spectra independently without using a CF, realizing the colorization of silicon-based products and improving the light emission efficiency.

[0009] To achieve the above object, the technical solution adopted by the present invention to solve the technical problems is to provide the following high-brightness OLED display device.

[0010] The high-brightness OLED display device includes a substrate and an optical microcavity structure disposed on the substrate. The optical microcavity structure includes an R optical microcavity region, a G optical microcavity region, and a B optical microcavity region. The cavity length of the G optical microcavity region is longer than the cavity length of the B optical microcavity region and shorter than the cavity length of the R optical microcavity region.

[0011] The optical microcavity structure includes an anode layer having a total reflection function, an organic layer disposed on the anode layer, and a cathode layer having a reflection and semi-transparent function.

[0012] The anode layer includes an R - anode, a G - anode, and a B - anode. The organic layer includes an organic layer I, an organic layer II, and an organic layer III. The cathode layer includes an R - cathode, a G - cathode, and a B - cathode. The R optical microcavity region includes the R - anode, the organic layer I on the R - anode, and the R - cathode. The G optical microcavity region includes the G - anode, the organic layer II on the G - anode, and the G - cathode. The B optical microcavity region includes the B - anode, the organic layer III on the B - anode, and the B - cathode.

[0013] The cavity length of the R optical microcavity region is the sum of the thicknesses of each film layer within the R optical microcavity region. The cavity length of the G optical microcavity region is the sum of the thicknesses of each film layer within the G optical microcavity region. The cavity length of the B optical microcavity region is the sum of the thicknesses of each film layer within the B optical microcavity region. The thickness of each film layer satisfies the following formula: JPEG2025081222000002.jpg1247Here, n i is the refractive index of each film layer, d i is the thickness of each film layer, and φ is the phase shift of light reflection at the surfaces of the cathode layer and the anode layer. TIFF2025081222000003.tif54is the wavelength value at the maximum value of the spectrum, m is a positive integer, and is the order of the microcavity.

[0014] The organic layer I and the organic layer II have the same structure, and the thickness of the R - anode is greater than the thickness of the G - anode.

[0015] The thickness of the G - anode is equal to the thickness of the B - anode, and the thickness of the organic layer I or organic layer II is greater than the thickness of the organic layer III.

[0016] A microcavity thickness compensation layer is provided in both the organic layer I and the organic layer II. The microcavity thickness compensation layer includes an R light-emitting layer and / or a G light-emitting layer, and the thicknesses of both the R light-emitting layer and the G light-emitting layer are set in the range of 10 to 80 nm.

[0017] The thicknesses of both the B-anode and the G-anode are set in the range of 5 to 80 nm, and the thickness of the R-anode is set in the range of 50 to 200 nm.

[0018] The organic layer includes an OLED device unit I, an OLED device unit II, and a CGL (charge generation layer, CGL) layer connected between the OLED device unit I and the OLED device unit II. The OLED device unit I is connected to the anode layer, and the OLED device unit II is connected to the cathode layer.

[0019] The OLED device unit I includes a light-emitting layer I. One side of the light-emitting layer I is connected to the anode layer through an electron blocking layer I, a hole transport layer I, and a hole injection layer in sequence. The other side of the light-emitting layer I is connected to the CGL layer through a hole blocking layer I and an electron transport layer I in sequence. The OLED device unit II includes a light-emitting layer II. One side of the light-emitting layer II is connected to the CGL layer through an electron blocking layer II and a hole transport layer II in sequence. The other side of the light-emitting layer II is connected to the cathode layer through a hole blocking layer II, an electron transport layer II, and an electron injection layer in sequence.

[0020] The light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I provided in sequence from bottom to top. The R light-emitting layer covers the upper parts of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II provided in sequence from bottom to top. The G light-emitting layer covers the upper parts of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer.

[0021] The light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I provided in order from bottom to top. The G light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II provided in order from bottom to top. The R light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer.

[0022] The light-emitting layer I includes an R light-emitting layer that covers the upper part of the anode layer. The light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II provided in order from bottom to top. The G light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer.

[0023] The light-emitting layer I includes a G light-emitting layer that covers the upper part of the anode layer. The light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II provided in order from bottom to top. The R light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer II covers the upper part of the anode layer.

[0024] The light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I provided in order from bottom to top. The G light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes an R light-emitting layer that covers the upper part of the anode layer.

[0025] The light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I provided in order from bottom to top. The R light-emitting layer covers the upper part of the R-anode and the G-anode, and the B light-emitting layer I covers the upper part of the anode layer. The light-emitting layer II includes a G light-emitting layer that covers the upper part of the anode layer.

[0026] The optical microcavity structure is connected to the packaging layer via a CPL (capping layer) layer.

[0027] The high-brightness OLED display device includes the OLED display device.

[0028] The manufacturing method of the high-brightness OLED display device includes Step 1, Step 2, and Step 3, Step 1: Fabricate an anode layer including an R-anode, a G-anode, and a B-anode on a substrate, where the thickness of the R-anode is greater than the thicknesses of the G-anode and the B-anode, Step 2: Stack and fabricate an organic layer on the anode layer, fabricate a B light-emitting layer covering the anode layer using a CMM mask, and fabricate an R light-emitting layer and / or a G light-emitting layer covering above the R-anode and the G-anode using an FMM mask, Step 3: Sequentially fabricate a cathode layer, a CPL layer, and a packaging layer on the organic layer.

Advantages of the Invention

[0029] 1. According to the present invention, optical microcavity regions with different cavity lengths are set at corresponding positions of R, G, and B pixels on a substrate. The cavity length of the G optical microcavity region is longer than that of the B optical microcavity region and shorter than that of the R optical microcavity region. By changing the cavity lengths of the corresponding optical microcavity regions, R, G, and B in the OLED display device each have corresponding microcavity optical path lengths, and RGB pixels can emit corresponding spectra independently without using a CF, realizing the colorization of silicon-based products and improving the luminous efficiency.

[0030] 2. In the present invention, the optical microcavity structure includes an anode layer, an organic layer on the anode layer, and a cathode layer. By adjusting the thicknesses of the corresponding R-anode, G-anode, and B-anode on the anode layer and combining them with organic layers of different thicknesses, the cavity length of the corresponding optical microcavity region is adjusted, and the thickness of the R-anode is greater than the thicknesses of the G-anode and the B-anode. The R-emitting layer and / or the G-emitting layer cover the R-anode and the G-anode. The R-emitting layer and the G-emitting layer are manufactured using an FMM mask. The apertures of the FMM mask are RG pixels. The aperture ratio of the MM mask is increased, and the lifespan of the FMM mask is improved. Throughout the process, the FMM mask is used at most twice to achieve independent RGB emission, and the problem of hole blocking caused by evaporating the same position using different film layer masks is avoided, improving the product yield.

Brief Description of the Drawings

[0031] Hereinafter, the content represented by each attached drawing of the specification of the present invention and the markings in the drawings will be briefly described:

[0032]

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Embodiments for Carrying Out the Invention

[0033] In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention. The following embodiments are used to explain the present invention and are not used to limit the scope of the present invention.

[0034] In the description of the present invention, the directions and positional relationships indicated by terms such as "up", "down", "front", "rear", "left", "right", "vertical", "inside", "outside", etc. are based on the directions and positional relationships shown in the drawings. This is only for convenience in explaining the present invention and simplifying the explanation. It does not imply or suggest that the devices or elements mentioned must have a specific orientation or a structure and operation based on a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0035] In the description of this specification, it should be noted that the terms "installation", "association", and "connection" should be understood in a broad sense unless otherwise specified and limited. For example, it can be a fixed connection, a removable connection, or an integral connection, it can be a mechanical connection or an electrical connection, and it can be a direct connection or an indirect connection through an intermediate medium. For those skilled in the art, the specific meanings of the above terms in this specification can be understood according to specific situations.

[0036] In the prior art, current silicon-based OLED full-color products have the following problems. 1) In the W+CF process, since the RGB light-emitting layers emit light simultaneously, the WOLED device cannot emit light independently in terms of spectrum, and it is necessary to use a CF (color filter) to achieve RGB independent light emission and color control. As a result, the light emission loss is large and the light emission efficiency is reduced. 2) In the RGB-SBS process, when silicon-based products achieve high brightness, due to the small single pixel aperture of the FMM mask, after depositing the FMM about 10 times, the problem of hole blocking occurs and the product yield is reduced. Therefore, in order to solve the above technical problems, the present invention provides a high-brightness OLED display device, a manufacturing method thereof, and a display device.

[0037] Specific embodiments of the present invention provide a high-brightness OLED display device including a substrate 1 and an optical microcavity structure on the substrate 1. The optical microcavity structure includes an R optical microcavity region, a G optical microcavity region, and a B optical microcavity region. The cavity length of the G optical microcavity region is longer than the cavity length of the B optical microcavity region and shorter than the cavity length of the R optical microcavity region. In the present invention, optical microcavity regions having different cavity lengths are set at corresponding positions of R, G, and B pixels on the substrate 1. The R, G, and B in the OLED display device each have a corresponding microcavity optical path length, and the RGB pixels can emit corresponding spectra independently without using a CF, realizing the colorization of silicon-based products and improving the luminous efficiency.

[0038] Specifically, the optical microcavity structure includes an anode layer 2 having a total reflection function, an organic layer 3 provided on the anode layer 2, and a cathode layer 4 having a reflection and semi-transmission function. The layer structure of the anode layer 2 is Ag / ITO (Ag is a total reflection metal), Al / TiN / TO (Al is a total reflection metal), Al / TO / MoO 3 (Al is a total reflection metal), Al / Co / MoO 3 (Al is a total reflection metal), Al / Ni / MoO 3 (Al is a total reflection metal), Al / MoO 3(Al is a total reflection metal). The total reflection metal in the layer structure endows the layer structure with a total reflection function. The cathode layer 4 can be fabricated from materials such as Mg:Ag, Yb:Ag, Li:Al, Ga, ITO, IZO, etc. The reflectivity of the cathode layer 4 is generally adjusted to 20% - 70% according to the cathode thickness and ratio. The anode layer 2 includes an R - anode 21, a G - anode 22, and a B - anode 23. The organic layer 3 includes an organic layer I, an organic layer II, and an organic layer III. The cathode layer includes an R - cathode, a G - cathode, and a B - cathode of the same thickness. The R optical microcavity region includes the R - anode 21, the organic layer I on the R - anode 21, and the R - cathode. The G optical microcavity region includes the G - anode 22, the organic layer II on the G - anode 22, and the G - cathode. The B optical microcavity region includes the B - anode 23, the organic layer III on the B - anode 23, and the B - cathode. The organic layer I and the organic layer II have the same film structure. The thickness of the R - anode 21 is greater than the thickness of the G - anode 22. The thickness of the G - anode 22 is equal to the thickness of the B - anode 23. The thickness of the organic layer I or the organic layer II is greater than the thickness of the organic layer III. A microcavity thickness compensation layer is provided in both the organic layer I and the organic layer II. The microcavity thickness compensation layer includes an R - emitting layer (R - EML), a G - emitting layer (G - EML), or a combination of the R - emitting layer (R - EML) and the G - emitting layer (G - EML). The R - emitting layer (R - EML) and the G - emitting layer (G - EML) are laminated when combined.

[0039] The present invention adjusts the thicknesses of the corresponding R anode 21, G anode 22, and B anode 23 on the anode layer 2, and under the action of the microcavity thickness compensation layer, adjusts the thicknesses of the organic layer I, organic layer II, and organic layer III, such that the thickness of the R - anode 21 is greater than the thicknesses of the G anode 22 and the B anode 23, and the upper parts of the R - anode 21 and G - anode 22 are covered by the R light - emitting layer (R - EML) and / or the G light - emitting layer (G - EML), so that the cavity length of the corresponding optical microcavity region can be adjusted, and the R, G, and B pixels have the corresponding microcavity optical paths, enabling the RGB pixels to emit light independently in the corresponding spectra without using a CF. Since the R light - emitting layer (R - EML) and the G light - emitting layer (G - EML) are manufactured using an FMM mask and the other film layers are manufactured using a CMM mask, the openings of the FMM mask become RG pixels, increasing the aperture ratio of the MM mask and improving the service life of the FMM mask. In the whole process, the FMM mask is used at most twice to realize RGB - independent light emission, avoiding the hole - blocking problem caused by evaporating the same position using different film - layer masks, and improving the product yield.

[0040] Specifically, the cavity length of the R optical microcavity region, the cavity length of the G optical microcavity region, or the cavity length of the B optical microcavity region is respectively the sum of the thicknesses of each film layer within the R optical microcavity region, the G optical microcavity region, or the B optical microcavity region, and the thickness of each film layer satisfies the following OLED microcavity calculation formula. JPEG2025081222000004.jpg1247Here, n i is the refractive index of each film layer, d i is the thickness of each film layer, φ is the phase shift of light reflection at the surfaces of the cathode layer 4 and the anode layer 2, TIFF2025081222000005.tif54 is the wavelength value at the maximum of the spectrum, m is a positive integer, which is the order of the microcavity. The wavelengths of R, G, and B are 620 nm, 525 nm, and 460 nm respectively. Light can be enhanced only when the thickness and wavelength of each film layer of the optical microcavity structure satisfy the above formula. When calculating the thickness of each film layer, the phase shift of light reflection on the surfaces of the cathode layer 4 and the anode layer 2 is ignored. In the formula Regarding JPEG2025081222000006.jpg11166, n is the average refractive index of the corresponding optical microcavity region, and d is the cavity length of the corresponding optical microcavity region.

[0041] When the thicknesses and refractive indices of other film layers except the thicknesses of the R-emitting layer (R-EML) and the G-emitting layer (G-EML) on the organic layer 3 are known, and the materials of the R-emitting layer (R-EML) and the G-emitting layer (G-EML) are known (that is, the refractive indices are known), the thicknesses of the R-emitting layer (R-EML) and / or the G-emitting layer (G-EML) can be calculated according to the above formula. Of course, The cavity lengths of the B optical microcavity region and the G optical microcavity region in JPEG2025081222000007.jpg15166B can be calculated separately, and the difference between the cavity length of the B optical microcavity region and the cavity length of the G optical microcavity region is the thickness of the microcavity thickness compensation layer. According to the calculation, the thicknesses of both the R-emitting layer (R-EML) and the G-emitting layer (G-EML) are set to be 10 - 80 nm. The thicknesses of the B-anode 23 and the G-anode 22 are constant and are both set to be 5 - 80 nm.

[0042] When the thicknesses of the R-emitting layer (R-EML) and the G-emitting layer (G-EML) are calculated, the thickness of the R-anode 21 is unknown, and the thicknesses and refractive indices of other film layers on the organic layer 3 are known, the thickness of the R-anode 21 is calculated according to the above formula. Of course, With JPEG2025081222000008.jpg15166, the cavity lengths of the G optical microcavity region and the R optical microcavity region can also be calculated separately. The difference in the cavity lengths of the two optical microcavity regions is either the difference in the thicknesses of the R anode 21 and the R anode 22, or the difference in the thicknesses of the R anode 21 and the B - anode 23. The calculated thickness of the R anode 21 is 50 - 200 nm.

[0043] Regarding the specific configuration of the above - mentioned high - brightness OLED display device, the present invention will be described in detail through the following embodiments.

[0044] Example 1 As shown in FIG. 1, an embodiment of the present invention provides a high - brightness OLED display device including a substrate 1 (a driving substrate 1, not shown). An anode layer 2 including an R - anode 21, a G - anode 22, and a B - anode 23 is provided on the substrate 1. The anode layer 2 is formed of ITO or IZO. The thickness of the G anode 22 is equal to that of the B anode 23 and is 10 nm. The thickness of the R - anode 21 is thicker than the thicknesses of the G anode 22 and the B anode 23 and is 70 nm. An organic layer 3 composed of a laminated film layer is provided on the anode layer 2. A cathode layer 4 is provided on the organic layer 3. The cathode layer 4 is connected to a packaging layer 6 via a CPL layer 5.

[0045] Specifically, the film - layer structure of the organic layer 3 includes an OLED device unit I - 31, an OLED device unit II - 33, and a CGL layer 32 connected between the OLED device unit I - 31 and the OLED device unit II - 33. The OLED device unit I - 31 is connected to the anode layer 2. The OLED device unit II - 33 is connected to the cathode layer 4, and the two OLED device units are connected in series via the CGL layer 32 to form the light - emitting organic layer 3.

[0046] The OLED device unit I-31 includes a light-emitting layer I-314. One side of the light-emitting layer I-314 is connected to the anode layer 2 through an electron blocking layer I-313, a hole transport layer I-312, and a hole injection layer 311 in sequence. The other side of the light-emitting layer I-314 is connected to the CGL layer 32 through a hole blocking layer I-315 and an electron transport layer I-316 in sequence. Of course, the OLED device unit I-31 is not limited to the above film layer structure, and other film layer structures can be added or the corresponding film layer structures can be reduced as needed. The OLED device unit II-33 includes a light-emitting layer II-333. One side of the light-emitting layer II-333 is connected to the CGL layer 32 through an electron blocking layer II-332 and a hole transport layer II-331 in sequence. The other side of the light-emitting layer II-333 is connected to the cathode layer 4 through a hole blocking layer II-334, an electron transport layer II-335, and an electron injection layer 336 in sequence. Of course, the OLED device unit II-33 is not limited to the above film layer structure, and other film layer structures can also be added as needed.

[0047] The light-emitting layer I-314 includes an R light-emitting layer (R-EML) and a B light-emitting layer I (B-EMLI) provided in order from bottom to top. The R light-emitting layer (R-EML) covers the upper part of the R-anode 21 and the G-anode 22, and the B light-emitting layer I (B-EMLI) covers the upper part of the anode layer 2. The R light-emitting layer (R-EML) is fabricated using a red light host material and a red light doping material having electron transport characteristics (e.g., CBP, TCTA, DFC, TAZ, BCP, OXD7, etc.). The B light-emitting layer I (B-EMLI) is fabricated using a blue light host material and a blue light doping material having electron transport characteristics (e.g., ADN, TBADN, MADN, BDSA, BTSA, etc.). Since the absolute value of the difference in the LUMO energy levels of the host materials of the R light-emitting layer (R-EML) and the B light-emitting layer I (B-EMLI) is less than 0.4 eV, electrons can move from the B light-emitting layer I (B-EMLI) to the R light-emitting layer (R-EML). Since the absolute value of the difference in the HOMO energy levels of the host materials of the R light-emitting layer (R-EML) and the B light-emitting layer I (B-EMLI) is greater than 0.4 eV, the movement of holes from the R light-emitting layer (R-EML) to the B light-emitting layer I (B-EMLI) becomes impossible.

[0048] The light-emitting layer II-333 includes a G light-emitting layer (G-EML) and a B light-emitting layer II (B-EMLII) provided in order from bottom to top. The G light-emitting layer (G-EML) covers the upper part of the R anode 21 and the G anode 22. The B light-emitting layer II (B-EMLII) covers the upper part of the anode layer 2. The G light-emitting layer (G-EML) is manufactured using a bipolar green light host material and a green light doping material (such as CBP, TCTA, DFC, TAZ, BCP, OXD7, etc.). The B light-emitting layer II (B-EMLII) is manufactured using a blue light host material having electron transport characteristics and a blue light doping material. Since the absolute value of the difference in the LUMO energy levels of the host materials of the G light-emitting layer (G-EML) and the B light-emitting layer II (B-EMLII) is less than 0.4 eV, electrons can move from the B light-emitting layer II (B-EMLII) to the G light-emitting layer (G-EML). Since the absolute value of the difference in the HOMO energy levels of the host materials of the G light-emitting layer (G-EML) and the B light-emitting layer II (B-EMLII) is greater than 0.4 eV, the movement of holes from the G light-emitting layer (G-EML) to the B light-emitting layer II (B-EMLII) becomes impossible.

[0049] The thickness of the R light-emitting layer (R-EML) and the thickness of the G light-emitting layer (G-EML) can be calculated according to the OLED microcavity calculation formula, and both the thickness of the R light-emitting layer (R-EML) and the thickness of the G light-emitting layer (G-EML) are set to 30 nm. Since the R light-emitting layer (R-EML) and the G light-emitting layer (G-EML) are all manufactured using an FMM mask and the openings are RG pixels, the R light-emitting layer (R-EML) and the G light-emitting layer (G-EML) can be deposited above the R anode 21 and the G anode 22 respectively, increasing the aperture ratio of the MM mask and improving the lifespan of the FMM mask. In the whole process, the FMM mask is only used twice to realize independent RGB emission, avoiding the hole blocking problem caused by evaporating the same position using different film layer masks, and improving the product yield. Furthermore, the light-emitting layers on the OLED device unit I-31 and the OLED device unit II-33 both include a B light-emitting layer, enhancing the emission efficiency of blue light.

[0050] The manufacturing method of the above high-brightness OLED display device includes the following steps.

[0051] Step 1: Fabricate an anode layer 2 including an R anode 21, a G anode 22, and a B anode 23 on a substrate 1. Here, the thickness of the R anode 21 is greater than the thickness of the G anode 22 and the thickness of the B anode 23.

[0052] Step 2: Stack and manufacture an organic layer 3 on the anode layer 2, manufacture a B light-emitting layer covering the anode layer 2 using a CMM mask, and manufacture an R light-emitting layer (R-EML) and / or a G light-emitting layer (G-EML) covering the upper parts of the R anode 21 and the G anode 22 using an FMM mask.

[0053] Specifically, 1) Manufacture of the OLED device unit I-31: (1) Using a CMM mask, sequentially form a hole injection layer 311, a hole transport layer I-312, and an electron blocking layer I-313 on the anode layer 2. (2) Using an FMM mask, form an R light-emitting layer (R-EML) with a thickness of 30 nm on the electron blocking layer I-313. The opening of the FMM mask is an RG pixel. The R light-emitting layer (R-EML) can be directly vapor-deposited above the R-anode 21 and the G-anode 22. (3) Using a CMM mask, sequentially form a B light-emitting layer I (B-EMLI), a hole blocking layer I-315, and an electron transport layer I-316 on the electron blocking layer I-313 and the R light-emitting layer (R-EML). The B light-emitting layer I (B-EMLI) employs a host material of an electron transport type material to enable electrons to be transmitted to the R light-emitting layer (R-EML).

[0054] 2) Manufacture the CGL layer 32. Using a CMM mask, manufacture the CGL layer 32 on the electron transport layer I-316.

[0055] 3) Manufacture the OLED device unit II-33. (1) Using a CMM mask, a hole transport layer II-331 and an electron blocking layer II-332 are sequentially formed on the CGL layer 32. (2) Using an FMM mask, a G light-emitting layer (G-EML) with a thickness of 30 nm is fabricated on the electron blocking layer II-332. The opening of the FMM mask is an RG pixel, and the G light-emitting layer (G-EML) can be directly vapor-deposited above the R-anode 21 and the G-anode 22. (3) Using a CMM mask, a B light-emitting layer II (B-EMLII), a hole blocking layer II-334, and an electron injection layer 336 are sequentially formed on the electron blocking layer II-332 and the G light-emitting layer (G-EML). The B light-emitting layer II (B-EMLII) employs a host material of an electron transport type material to enable electrons to be transmitted to the G light-emitting layer (G-EML).

[0056] Step 3: A cathode layer 4, a CPL layer 5, and a packaging layer 6 are sequentially formed on the organic layer 3.

[0057] Example 2 As shown in FIG. 2, the embodiment of the present invention provides a high-brightness OLED display device. The structures of the light-emitting layer I 314 and the light-emitting layer II 333 are different from the structures of the light-emitting layer I 314 and the light-emitting layer II 333 in Example 1. The light-emitting layer I 314 and the light-emitting layer II 333 in Example 1 are exchanged. That is, the light-emitting layer I 314 includes a G light-emitting layer (G-EML) and a B light-emitting layer I (B-EMLI) provided in order from bottom to top. The G light-emitting layer (G-EML) covers above the R-anode 21 and the G-anode 22. The B light-emitting layer I (B-EMLI) covers above the anode layer 2. The light-emitting layer II-333 includes an R light-emitting layer (R-EML) and a B light-emitting layer II (B-EMLII) provided in order from bottom to top. The R light-emitting layer (R-EML) covers above the R-anode 21 and the G-anode 22. The B light-emitting layer II (B-EMLII) covers above the anode layer 2.

[0058] Since the manufacturing method of the high-brightness OLED display device is specifically adjusted according to the structural adjustment of the light-emitting layer I-314 and the light-emitting layer II-333, it will not be repeated here.

[0059] The RGB pixel spectra of the high-brightness OLED display devices obtained in Example 1 and Example 2 are shown in Fig. 3. It can be seen that the spectra include three discrete bands: a blue light band, a green light band, and a red light band. The blue light band reaches its peak at a wavelength of 460 nm, the green light band reaches its peak at a wavelength of 525 nm, and the red light band reaches its peak at a wavelength of 620 nm. There are few impurity peaks at wavelengths other than the peaks, achieving the goal of an RGB-independent emission spectrum.

[0060] The optical performance parameters of the above high-brightness OLED display device are shown in Table 1.

[0061] [Table 1] Optical performance parameters of the OLED display devices of Example 1 and Example 2

[0062]

Table 1

[0063] As can be seen from the above table, when CF is not used, the DCI-P3 color gamut of the display device of the present invention exceeds 100%, indicating that it meets the product requirements.

[0064] Example 3 As shown in FIG. 4, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Embodiment 1 is that the structure of the light-emitting layer I-314 is different. The light-emitting layer I-314 includes an R light-emitting layer (R-EML) covering the upper side of the anode layer 2. The structure of the light-emitting layer II-333 is the same as that of the light-emitting layer II 333 in Embodiment 1. The light-emitting layer II 333 includes a G light-emitting layer (G-EML) and a B light-emitting layer II (B-EMLII) provided in order from bottom to top. The G light-emitting layer (G-EML) covers the upper sides of the R-anode 21 and the G-anode 22. The B light-emitting layer II (B-EMLII) covers the upper side of the anode layer 2. The thickness of the R light-emitting layer (R-EML) is 30 nm, the thickness of the G light-emitting layer (G-EML) is 55 nm, and the thickness of the R-anode 21 is 70 nm. The thicknesses of the other film layer structures are the same as those of the corresponding film layers in Embodiment 1.

[0065] In the manufacturing method of the OLED device unit I31 in the manufacturing method of the high-brightness OLED display device of this embodiment, it is different from the manufacturing method of the OLED device unit I31 in Embodiment 1. The manufacturing method of the OLED device unit I31 of this embodiment is manufactured as follows.

[0066] (1) Using a CMM mask, a hole injection layer 311, a hole transport layer I-312, and an electron blocking layer I-313 are sequentially formed on the anode layer 2.

[0067] (2) Using a CMM mask, an R light-emitting layer (R-EML) with a thickness of 30 nm is manufactured on the entire surface of the electron blocking layer I-313.

[0068] (3) Using a CMM mask, a B light-emitting layer I (B-EMLI), a hole blocking layer I-315, and an electron transport layer I-316 are sequentially formed on the R light-emitting layer (R-EML). The B light-emitting layer I (B-EMLI) employs a host material of an electron transport type material so that electrons are transmitted to the R light-emitting layer (R-EML).

[0069] Example 4 As shown in FIG. 5, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Example 3 is that the structures of the light-emitting layer I314 and the light-emitting layer II333 in Example 3 are exchanged. That is, the light-emitting layer I-314 includes a G light-emitting layer (G-EML) and a B light-emitting layer I (B-EMLI) provided in order from bottom to top. The G light-emitting layer (G-EML) covers the upper sides of the R anode 21 and the G anode 22. The B light-emitting layer I (B-EMLI) covers the upper side of the anode layer 2. The light-emitting layer II-333 includes an R light-emitting layer (R-EML) that covers the upper side of the anode layer 2. Since the manufacturing method of the high-brightness OLED display device is specifically adjusted according to the structure adjustment of the light-emitting layer I-314 and the light-emitting layer II-333, it will not be repeated here.

[0070] Example 5 As shown in FIG. 6, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Example 2 is that the structure of the light-emitting layer I-314 is different. That is, the light-emitting layer I-314 includes a G light-emitting layer (G-EML) that covers the upper side of the anode layer 2, and the light-emitting layer II-333 has the same structure as in Example 2. The light-emitting layer II333 includes an R light-emitting layer (R-EML) and a B light-emitting layer II (B-EMLII) provided in order from bottom to top. The R light-emitting layer (R-EML) covers the upper sides of the R anode 21 and the G anode 22. The B light-emitting layer II (B-EMLII) covers the upper side of the anode layer 2. The thickness of the R light-emitting layer (R-EML) is 55 nm, the thickness of the G light-emitting layer (G-EML) is 30 nm, and the thicknesses of the other film layers are the same as those of the corresponding film layers in Example 3.

[0071] The manufacturing method of the OLED device unit I-31 in the manufacturing method of the high-brightness OLED display device of this example is different from the manufacturing method of the OLED device unit I-31 in Example 2. The manufacturing method of the OLED device unit I-31 of this example is manufactured as follows.

[0072] (1) Using a CMM mask, a hole injection layer 311, a hole transport layer I-312, and an electron blocking layer I-313 are sequentially formed on the anode layer 2.

[0073] (2) Using a CMM mask, a G-emitting layer (G-EML) with a thickness of 30 nm is fabricated over the entire surface of the electronic blocking layer I-313.

[0074] (3) Using a CMM mask, a hole blocking layer I-315 and an electron transport layer I-316 are sequentially formed over the G-emitting layer (G-EML).

[0075] Example 6 As shown in FIG. 7, an embodiment of the present invention provides a high-brightness OLED display device. The difference from Example 5 is that the structures of the light-emitting layer I-314 and the light-emitting layer II-333 in Example 5 are exchanged. That is, the light-emitting layer I-314 includes an R-emitting layer (R-EML) and a B-emitting layer I (B-EMLI) provided in order from bottom to top. The R-emitting layer (R-EML) covers the upper portions of the R-anode 21 and the G-anode 22, and the B-emitting layer I (B-EMLI) covers the upper portion of the anode layer 2. The light-emitting layer II-333 covers the upper portion of the anode layer 2 and includes a G-emitting layer (G-EML).

[0076] Since the manufacturing method of the high-brightness OLED display device is specifically adjusted according to the structure adjustment of the light-emitting layer I-314 and the light-emitting layer II-333, it will not be repeated here.

[0077] The RGB pixel spectra of the high-brightness OLED display devices obtained in the above Examples 3 to 6 are shown in FIG. 8. In the spectrum, the blue light band reaches a peak at a wavelength of 460 nm, the green light band reaches a peak at a wavelength of 530 nm, and the red light band reaches a peak at a wavelength of 620 nm. The impurity peaks at wavelengths other than the peak are reduced, achieving the purpose of an RGB independent emission spectrum.

[0078] The optical performance parameters of the above high-brightness OLED display device are shown in Table 2.

[0079] [Table 2] Optical performance parameters of the OLED display devices of Examples 3 to 6

[0080]

Table 2

[0081] As can be seen from the above table, when CF is not used, the DCI-P3 color gamut of the display device of the present invention exceeds 100%, indicating that it meets the product requirements.

[0082] Example 7 An embodiment of the present invention provides a high-brightness OLED display device including the OLED display device described in any one of Examples 1 to 6.

[0083] Examples of the display device include products having a display function such as a liquid crystal panel, a monitor, a television, a digital photo frame, a navigator, a computer, a collection, an in-vehicle display, and a camera, and are used in the field of optical displays.

[0084] Comparative Example 1 This comparative example is an OLED display device in which a CF (color filter) is added to a white light OLED (WOLED). Its structure is shown in FIG. 9. A substrate, an anode layer, a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a B emission layer (B-EML), a hole blocking layer (HBL), an electron transport layer (ETL), a charge generation layer (N-CGL and P-CGL), a hole transport layer (HTL), an electron blocking layer (EBL), a G emission layer (G-EML), an R emission layer (R-EML), a hole blocking layer (HBL), an electron transport layer (ETL), an electron injection layer (EIL), a cathode, a packaging layer (TFE), and a CF layer are laminated in order from bottom to top. A capping layer (CPL) (not shown) is provided between the cathode and the packaging layer (TFE). The thicknesses of the R anode, G anode, and B anode on the anode layer are equal to the thicknesses of the G anode and B anode in Example 1. The difference between the organic layer and Example 1 is that both the R emission layer (R-EML) and the G emission layer (G-EML) are deposited over the entire surface, and a CF layer is provided on the packaging layer. The thickness of each film layer of the organic layer 3 is equal to the thickness of the corresponding film layer in Example 1.

[0085] The RGB pixel spectrum of the OLED display device is shown in FIG. 10. It can be seen that the spectrum includes three discrete bands: a blue light band, a green light band, and a red light band. The blue light band reaches a peak at a wavelength of 460 nm, the green light band reaches a peak at a wavelength of 530 nm, and the red light band reaches a peak at a wavelength of 620 nm. Also, there are many impurity peaks at wavelengths other than the peak, resulting in a large emission loss and a decrease in emission efficiency.

[0086] Comparative Example 2 This comparative example is an OLED display device with the structure shown in FIG. 11. A substrate, an anode layer, a hole injection layer (HIL), a hole transport layer (HTL), an R emission layer (R-EML), a G emission layer (G-EML), an electron transport layer (ETL), a charge generation layer (CGL), a hole injection layer (HIL), a hole transport layer (HTL), a B emission layer (B-EML), an electron transport layer (ETL), an electron injection layer (EIL), a cathode, and a packaging layer (TFE) are sequentially stacked from bottom to top. A capping layer (CPL) (not shown) is provided between the cathode and the packaging layer (TFE). The thickness of each film layer in the organic layer between the anode layer and the cathode is equal to the thickness of the corresponding film layer in Example 1. The thickness of the G anode on the anode layer is greater than the thickness of the B anode and smaller than the thickness of the R anode. The thickness of the R-anode is 120 nm, the thickness of the G anode is 70 nm, and the thickness of the B anode is 10 nm. By changing the thickness of the anode corresponding to each pixel to adjust the cavity length of the microcavity, a light modulation effect can be obtained.

[0087] The RGB pixel spectrum of the OLED display device is shown in FIG. 12. It can be seen that the spectrum includes three discrete bands: a blue light band, a green light band, and a red light band. The blue light band reaches a peak at a wavelength of 460 nm, and the green light band reaches a peak at a wavelength of 460 nm. The red light band reaches a peak at a wavelength of 530 nm, and the red light band reaches a peak at a wavelength of 620 nm. Also, at wavelengths other than the peak, there are many impurity peaks, resulting in increased light emission loss and decreased light emission efficiency. To weaken the impurity peaks, it is necessary to use an additional CF layer.

[0088] Here, Table 3 shows the optical performance parameters of the OLED display devices of Comparative Example 1 and Comparative Example 2.

[0089] [Table 3] Optical performance parameters of the OLED display devices of Comparative Example 1 and Comparative Example 2

[0090]

Table 3

[0091] When comparing the OLED display devices of Comparative Example 1 and Comparative Example 2 with the optical performance parameters of the OLED display devices of Examples 1 to 6, the luminous efficiency of each pixel of the OLED display devices of Examples 1 to 6 (the higher the eff value, the higher the luminous efficiency) is significantly higher than that of Comparative Example 1 and Comparative Example 2, and the products of the present invention can achieve higher brightness.

[0092] Therefore, in this comparative example, only the cavity length of the microcavity for optical modulation is adjusted by changing the thickness of the corresponding pixel on the anode layer, and the obtained RGB pixel spectrum has many impurity peaks at wavelengths other than the peak. As a result, the light emission loss increases and the luminous efficiency decreases. In Examples 1 to 6 of the present invention, the cavity length of the microcavity is adjusted by changing the thickness of the anode layer and the thickness of the light-emitting layer at the same time to perform optical modulation, so that the light-emitting layer of the corresponding pixel emits light while the light-emitting layers of other pixels do not emit light. Therefore, the obtained RGB pixel spectrum has fewer impurity peaks at wavelengths other than the peak, and there is no need to use an additional CF layer to weaken the impurity peaks, and a high color gamut and high brightness can be obtained.

[0093] The above description only shows a part of the principle of the present invention, and this description is not intended to limit the present invention to the specific structures and application scopes shown. Therefore, all available corresponding changes and equivalents belong to the scope of the present invention.

Description of Reference Numerals

[0094] 1. Substrate 2. Anode layer 21. R - anode 22. G - anode 23. B - anode 3. Organic layer 31. OLED device unit I 311. Hole injection layer 312. Hole transport layer I 313. Electron blocking layer I 314. Light - emitting layer I 315. Hole blocking layer I 316. Electron transport layer I 32. CGL layer 33. OLED device unit II 331. Hole transport layer II 332. Electron blocking layer II 333. Light emitting layer II 334. Hole blocking layer II 335. Electron transport layer II 336. Electron injection layer 4. Cathode layer 5. CPL layer 6. Packaging layer

Claims

1. 1. A high brightness OLED display device, comprising: A substrate; an optical microcavity structure disposed on the substrate; the optical microcavity structure includes an R optical microcavity region, a G optical microcavity region, and a B optical microcavity region; A high brightness OLED display device, wherein the cavity length of said G optical microcavity region is longer than the cavity length of said B optical microcavity region and shorter than the cavity length of said R optical microcavity region.

2. 2. The high brightness OLED display device of claim 1, wherein the optical microcavity structure includes an anode layer with total reflection function, an organic layer disposed on the anode layer, and a cathode layer with reflection and semi-transparency functions.

3. 3. The high brightness OLED display device of claim 2, wherein the anode layer comprises an R-anode, a G-anode and a B-anode, the organic layer comprises an organic layer I, an organic layer II and an organic layer III, the cathode layer comprises an R-cathode, a G-cathode and a B-cathode, the R optical microcavity region comprises the R-anode, an organic layer I on the R-anode and an R-cathode, the G optical microcavity region comprises a G-anode, an organic layer II on the G-anode and a G-cathode, and the B optical microcavity region comprises a B-anode, an organic layer III on the B-anode and a B-cathode.

4. the cavity length of the R optical microcavity region is the sum of the thicknesses of each film layer in the R optical microcavity region, the cavity length of the G optical microcavity region is the sum of the thicknesses of each film layer in the G optical microcavity region, and the cavity length of the B optical microcavity region is the sum of the thicknesses of each film layer in the B optical microcavity region, the thicknesses of each film layer satisfying the following equation: Here, n ｉ is the refractive index of each film layer, and d ｉ is the thickness of each film layer, φ is the phase shift of the light reflection at the surfaces of the cathode and anode layers, 4. The high brightness OLED display device of claim 3, wherein m is a positive integer and is the order of the microcavity.

5. 4. The high brightness OLED display device of claim 3, wherein the organic layer I and the organic layer II have the same structure, and the thickness of the R-anode is greater than the thickness of the G-anode.

6. 4. The high brightness OLED display device of claim 3, wherein the thickness of the G-anode is equal to the thickness of the B-anode, and the thickness of the organic layer I or the organic layer II is greater than the thickness of the organic layer III.

7. 7. The high brightness OLED display device of claim 6, wherein a microcavity thickness compensation layer is provided on both the organic layer I and the organic layer II, the microcavity thickness compensation layer includes an R light-emitting layer and / or a G light-emitting layer, and the thicknesses of the R light-emitting layer and the G light-emitting layer are both set in the range of 10 to 80 nm.

8. 7. The high brightness OLED display device of claim 6, wherein the thicknesses of the B-anode and the G-anode are both set in the range of 5 to 80 nm, and the thickness of the R-anode is set in the range of 50 to 200 nm.

9. 4. The high brightness OLED display device of claim 3, wherein the organic layers include an OLED device unit I, an OLED device unit II, and a CGL layer connected between OLED device unit I and OLED device unit II, the OLED device unit I being connected to an anode layer, and the OLED device unit II being connected to a cathode layer.

10. 10. The high brightness OLED display device of claim 9, wherein the OLED device unit I comprises an emitting layer I, one side of which is connected to the anode layer via an electron blocking layer I, a hole transport layer I and a hole injection layer in that order, and the other side of which is connected to the CGL layer via a hole blocking layer I and an electron transport layer I in that order; and the OLED device unit II comprises an emitting layer II, one side of which is connected to the CGL layer via an electron blocking layer II and a hole transport layer II in that order, and the other side of which is connected to the cathode layer via a hole blocking layer II, an electron transport layer II and an electron injection layer in that order.

11. 11. The high brightness OLED display device of claim 10, wherein the light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I provided in this order from bottom to top, the R light-emitting layer covering the R-anode and G-anode, the B light-emitting layer I covering the anode layer, the light-emitting layer II includes a G light-emitting layer and a B light-emitting layer II provided in this order from bottom to top, the G light-emitting layer covering the R-anode and G-anode, and the B light-emitting layer II covering the anode layer.

12. 11. The high brightness OLED display device of claim 10, wherein the light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I provided in this order from bottom to top, the G light-emitting layer covering the R-anode and G-anode, the B light-emitting layer I covering the anode layer, the light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II provided in this order from bottom to top, the R light-emitting layer covering the R-anode and G-anode, and the B light-emitting layer II covering the anode layer.

13. 11. The high brightness OLED display device of claim 10, wherein the light-emitting layer I includes an R-light-emitting layer covering the upper part of the anode layer, the light-emitting layer II includes a G-light-emitting layer and a B-light-emitting layer II provided in this order from bottom to top, the G-light-emitting layer covering the upper parts of the R-anode and G-anode, and the B-light-emitting layer II covering the upper part of the anode layer.

14. 11. The high brightness OLED display device of claim 10, wherein the light-emitting layer I includes a G light-emitting layer overlying the anode layer, the light-emitting layer II includes an R light-emitting layer and a B light-emitting layer II provided in that order from bottom to top, the R light-emitting layer overlying the R-anode and G-anode, and the B light-emitting layer II overlying the anode layer.

15. 11. The high brightness OLED display device of claim 10, wherein the light-emitting layer I includes a G light-emitting layer and a B light-emitting layer I arranged in this order from bottom to top, the G light-emitting layer covering the R-anode and the G-anode, the B light-emitting layer I covering the anode layer, and the light-emitting layer II includes an R light-emitting layer covering the anode layer.

16. 11. The high brightness OLED display device of claim 10, wherein the light-emitting layer I includes an R light-emitting layer and a B light-emitting layer I arranged in this order from bottom to top, the R light-emitting layer covering the R-anode and the G-anode, the B light-emitting layer I covering the anode layer, and the light-emitting layer II includes a G light-emitting layer covering the anode layer.

17. 10. The high brightness OLED display device of claim 1, wherein the optical microcavity structure is connected to a packaging layer through a CPL layer.

18. 18. A high brightness OLED display comprising an OLED display device according to any one of claims 1 to 17.

19. A method for manufacturing a high brightness OLED display device according to any one of claims 1 to 17, comprising the steps of: Step 1: fabricating an anode layer including an R-anode, a G-anode and a B-anode on a substrate; Step 2 of manufacturing an organic layer on the anode layer; Step 3 of sequentially fabricating a cathode layer, a CPL layer and a packaging layer on the organic layer; Step 2 includes using a CMM mask to fabricate a B light-emitting layer covering the anode layer, and using an FMM mask to fabricate an R light-emitting layer and / or a G light-emitting layer covering the R-anode and G-anode; A method for manufacturing a high brightness OLED display device, wherein the thickness of the R-anode is greater than the thickness of the G-anode and the thickness of the B-anode.

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