Semiconductor layer structure

The nitride semiconductor layer structure with vertical nanowire structures effectively addresses the challenge of forming high-quality nitride layers on silicon substrates by encapsulating dislocations and reducing defects, thereby improving the crystal quality and performance of nitride semiconductor devices.

JP2025081746AActive Publication Date: 2025-05-27EPINOVATECH AB
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Patent Information

Application Number
JP2025033832
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2019-12-11
Filing Date
2025-03-04
Publication Date
2025-05-27
Estimated Expiration
2040-12-08

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Abstract

To provide nitride semiconductor layer structures, electronic devices based thereon, and methods of producing such structures and devices.SOLUTION: A semiconductor layer structure (100) comprises: an Si substrate (102) having a top surface (104); a first semiconductor layer (110) arranged on the substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures (112) arranged perpendicularly to the top surface of the substrate, the first semiconductor layer comprising AIN; a second semiconductor layer (120) laterally and vertically enclosing the nanowire structures (112) on the first semiconductor layer, the second semiconductor layer comprising AlxGa1-xN, where 0≤x≤0.95; a third semiconductor layer (130) arranged on the second semiconductor layer (120), the third semiconductor layer comprising AlyGa1-yN, where 0≤y≤0.95; and a fourth semiconductor layer (140) arranged on the third semiconductor layer, the fourth semiconductor layer comprising GaN.SELECTED DRAWING: Figure 1
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Citation Information

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