Systems for integrated decomposition and scanning of semiconducting wafer

Abstract

To provide systems and methods for integrated decomposition and scanning of a material such as a semiconducting wafer.SOLUTION: A scanning nozzle includes, but is not limited to, a nozzle body defining one or more nozzle ports to receive fluid for introduction to a surface of a material and to recover fluid from the surface of the material, and a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel 700 longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels 702, 704 longitudinally disposed along the nozzle body, the inner channel fluidically coupled with the one or more outer channels via one or more gaps defined by the nozzle hood.SELECTED DRAWING: Figure 7H

Description

Cross - Reference to Related Applications

[0001] This application claims the benefit of 35 USC § 119(e) of U.S. Provisional Application No. 63 / 011,183, filed on April 16, 2020, entitled "System for Integrated Dissection and Scanning of Semiconductor Wafers". U.S. Provisional Application No. 63 / 011,183 is incorporated herein by reference in its entirety.

Background Art

[0002] Inductively coupled plasma (ICP) spectrometry is an analytical technique commonly used for measuring trace element concentrations and isotope ratios in liquid samples. In ICP spectrometry, an electromagnetically generated partially ionized argon plasma that reaches a temperature of about 7000 K is used. When a sample is introduced into this plasma, the sample atoms are ionized or emit light due to the high temperature. Since each chemical element produces a characteristic mass or emission spectrum, the elemental composition of the original sample can be determined by measuring the spectrum of the emitted mass or light.

[0003] To introduce a liquid sample into an ICP spectrometry apparatus (e.g., inductively coupled plasma mass spectrometer (ICP / ICP - MS), inductively coupled plasma atomic emission spectrometer (ICP - AES), etc.) for analysis, a sample introduction system may be employed. For example, the sample introduction system can transport an aliquot of the sample to a nebulizer and convert the aliquot into a polydisperse aerosol suitable for ionization in the plasma by an ICP spectrometer. The aerosol generated by the nebulizer is sorted in a spray chamber, and large aerosol particles are removed. The aerosol exiting the spray chamber is introduced into the plasma by the plasma torch assembly of an ICP - MS or ICP - AES apparatus and analyzed.

Summary of the Invention

[0004] Systems and methods for integrated disassembly and scanning of semiconductor wafers are described, where a single chamber is utilized for disassembly and scanning of a target wafer. Embodiments of a scanning nozzle include, but are not limited to, a nozzle body that defines one or more nozzle ports for receiving a fluid for introduction to a surface of a material and recovering the fluid from the surface of the material, and a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel disposed longitudinally along the nozzle body, the nozzle hood further defining one or more outer channels disposed longitudinally along the nozzle body, the inner channel being fluidly coupled to the one or more outer channels via one or more gaps defined by the nozzle.

[0005] Embodiments of a method include, but are not limited to, introducing a scanning fluid to a surface of a material via a nozzle, the nozzle including a nozzle body that defines one or more nozzle ports for receiving a fluid for introduction to a surface of a material and recovering the fluid from the surface of the material, and a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel disposed longitudinally along the nozzle body, the nozzle hood further defining one or more outer channels disposed longitudinally along the nozzle body, the inner channel being fluidly coupled to the one or more outer channels via one or more gaps defined by the nozzle hood. Embodiments of the method further include guiding the scanning fluid along the surface of the material via the nozzle to at least a portion of the fluid held at least within the inner channel, and removing the scanning fluid from the surface of the material via the one or more nozzle ports.

[0006] This summary is provided to introduce, in simplified form, a selection of concepts that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The detailed description will be given with reference to the accompanying drawings. The use of the same reference numerals in different examples in the description and the drawings may indicate similar or identical locations.

[0008]

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Mode for Carrying Out the Invention

[0009] Overview Measurement of trace element concentration or amount in a sample can provide an indicator of the purity of the sample or the acceptability of the sample for use as a reagent, reaction component, etc. For example, in certain production processes or manufacturing processes (mining, metallurgy, semiconductor manufacturing, pharmaceutical processing, etc.), the allowable range of impurities is very strict and may be on the order of parts per billion. In the case of semiconductor wafer processes, wafers are tested for impurities such as metal impurities that can reduce the wafer's performance or render the wafer inoperable due to a decrease in carrier lifetime, dielectric breakdown of wafer components, etc.

[0010] Vapor phase decomposition (VPD) followed by wafer scanning is a technique for analyzing the composition of a wafer to determine the presence of metal impurities. Conventional VPD and scanning techniques have limited throughput in order to facilitate the processing and scanning of silicon wafers or other material surfaces for impurity analysis. For example, many systems use separate chambers for VPD and scanning. In the VPD chamber, silicon dioxide and other metal impurities present on the surface are contacted with vapors (e.g., hydrofluoric acid (HF), hydrogen peroxide (H 2 O 2 ), combinations thereof) to form vapors (e.g., silicon tetrafluoride (SiF 4It is removed from the surface as (( )). The processed wafer is transported to another chamber for scanning, where liquid droplets are introduced onto the surface of the processed wafer, and the residues after the reaction between the wafer and the decomposition vapor are collected. As the scanning procedure, the droplet can be held on the wafer surface by the scanning head, and while rotating the wafer, the scanning head can be moved, or the scanning head can be stationary and the droplet can be moved on the surface. After rotating the wafer multiple times, the droplet interacts with the desired surface area of the wafer and extracts the residues after decomposition from the contacted surface. However, conventional wafer processing techniques require a significant amount of time and equipment to process the wafer, such as moving the wafer from the decomposition chamber to the scanning chamber and the rinse chamber during processing, and using a scanning nozzle in which the interaction of the droplet with the wafer surface is limited during scanning (i.e., it is necessary to rotate the wafer multiple times for the droplet to interact with the entire surface or a part thereof). Furthermore, such handling of the wafer potentially exposes technicians or other individuals to toxic hydrofluoric acid or other dangerous chemicals, or increases the risk of environmental contamination to the wafer during the transfer of the wafer between various process chambers, and also requires a substantial physical process floor area to facilitate the equipment and the transfer mechanism between the equipment.

[0011] Accordingly, the present disclosure relates, at least in part, to systems and methods for disassembly and scanning of semiconductor wafers, where the chamber facilitates disassembly and scanning of a semiconductor wafer with a single chamber footprint, and is guided by a nozzle hood that defines an elongated channel for directing flow along the wafer surface, between a first port and a second port of the nozzle, the nozzle directing the flow of fluid along the surface of the semiconductor wafer. The chamber defines at least two openings through which a semiconductor wafer can pass by operation of a motor system associated with the wafer support, and includes a ledge that provides zones for disassembly and rinsing while controlling fluid movement within the chamber, such as draining and preventing cross-contamination. The motor system controls the vertical position of the wafer support relative to the chamber body to move the semiconductor within the chamber body, and is supported by the motor system for positioning above the chamber body to perform wafer loading and unloading, access to the nozzle, etc. The chamber can further incorporate a nebulizer for directing an aerosolized disassembling liquid directly onto the surface of the semiconductor wafer while the wafer support positions the semiconductor wafer within the interior region of the chamber. The chamber can incorporate a lid that can be opened and closed relative to the chamber to isolate the interior region of the chamber from the region external to the chamber, such as during the disassembly process. The nozzle can be positioned relative to the chamber by a rotatable scanning arm, and the nozzle can be positioned away from the chamber to facilitate closing of the lid (e.g., during the disassembly procedure) or to facilitate rinsing of the nozzle at a rinsing station. Further, the rotatable scanning arm can position the nozzle over the semiconductor wafer during the scanning procedure. The system can utilize a fluid processing system that includes switchable selection valves and pumps to control introduction of fluid to the nozzle, introduction of fluid from the surface of the wafer, preparation of blanks, cleaning of system components, etc. After or during the scanning procedure, the scanning fluid can be collected for analytical determination of the composition of the scanning fluid and sent to an analytical device (e.g., an ICPMS device).

[0012] Examples Figures 1A - 10 illustrate aspects of a system (the "System 100") for integrated disassembly and scanning of a semiconductor wafer. The System 100 generally includes a chamber 102, a scanning arm assembly 104, and a fluid processing system 106 (shown at least in part in FIGS. 9A - 10), and at least facilitates disassembly and scanning procedures of a semiconductor wafer 108 (sometimes referred to herein as the "wafer") through introduction of disassembly fluid to the wafer and introduction and removal of scanning fluid to / from the surface of the wafer 108. While the present disclosure provides exemplary implementations regarding disassembly and scanning of semiconductor wafers, the present disclosure is not limited to processes involving semiconductor wafers and can facilitate treatment of other material surfaces. The chamber 102 provides an environment for each of wafer disassembly and wafer scanning with a single chamber footprint, and includes a wafer support 110 for holding the wafer 108 and a motor system 112 that controls the vertical position of the wafer support 110 relative to the chamber 102 (e.g., within the chamber 102, on the chamber 102, etc.) for positioning the wafer 108 for disassembly and scanning procedures or during other procedures of the System 100. The motor system 112 further provides rotational control of the wafer support 110 for rotating the wafer 108 during various procedures of the System 100, and provides rotational and vertical control of the scanning arm assembly 104 for moving the nozzle of the scanning arm assembly 104 to positions on the wafer 108 during scanning procedures and to the position of a rinse station 114 for nozzle cleaning. In an embodiment, the wafer support 110 includes a vacuum table for fixedly holding the wafer 108 relative to the wafer support 110, such as during movement of the wafer support 110.

[0013] Chamber 102 includes a chamber body 116 that defines an internal region 118 for receiving wafer 108 for processing. A ledge 120 protrudes into the internal region 118 between a top 122 of the chamber body 116 and a bottom 124 of the chamber body 116. In an embodiment, the chamber body 116 defines a first opening 126 in the top 122 through which the wafer 108 can be received into the internal region 118. In an embodiment, the ledge 120 defines a second opening 128 in an intermediate portion of the internal region 118 between the top 122 and the bottom 124 (e.g., between the first opening 126 and the bottom 124). During the exemplary operation shown in FIG. 1A, the system 100 can receive the semiconductor wafer 108 on the wafer support 110 through the operation of the robotic arm 50 that selects the wafer 108 from a front-end unified pod (FOUP) or other location and introduces the selected wafer 108 onto the wafer support 110 (e.g., at the center of the wafer support 110). The motor system 112 enables access to the wafer support 110 by the robotic arm 50 to set the wafer 108 on the wafer support 110 by positioning the wafer support 110 on, above, or adjacent to the top 122 of the chamber body 116. For example, the wafer support 110 may be positioned at a first position adjacent to the first opening 126 (e.g., as shown in FIG. 2A) during loading of the wafer 108. In an embodiment, the first position of the wafer support 110 is positioned outside the internal region 118 (e.g., extended through the first opening 126) for receiving the wafer 108.

[0014] System 100 can include a lid 130 for isolating an internal region 118 from an external region 132 to facilitate wafer decomposition while restricting exposure of the decomposition liquid to the external region 132. For example, the lid 130 can have a size and shape that covers the first opening 126 when positioned over the first opening 126. The lid 130 is positionable between an open position (e.g., shown in FIG. 1A) and a closed position (e.g., shown in FIG. 1B). The open position can be utilized during wafer loading, during a scanning procedure, during a wafer unloading procedure, etc. to provide access to the automated arm. In an embodiment, the lid 130 is in the open position when the wafer support 110 is in a first position adjacent to the first opening 126, providing access to the wafer 108 by the nozzle of the scanning arm assembly 104. The closed position can be utilized during the wafer decomposition procedure to prevent the decomposition liquid from exiting the chamber 102 through the first opening 126. In an embodiment, at least a portion of the lid 130 contacts the chamber body 116 to isolate the internal region 118 from the external region 132. The wafer 108 is moved to a second position within the internal region 118 through control of the vertical position of the wafer support 110 by the motor system 112. For example, the motor system 112 moves the wafer support 110 to a second position within the internal region 118 before or during the movement of the lid 130 from the open position to the closed position. In an embodiment, the lid 130 is disposed adjacent to the chamber body 116 and is rotatably coupled to the mount 134 via a lid arm 136 to transition the lid 130 between the open position and the closed position.

[0015] Following the introduction of the wafer 108 to the wafer support 110, the system 100 can transition to a decomposition configuration to facilitate the decomposition of one or more surfaces or edges of the wafer 108. For example, the motor system 112 moves the wafer support 110 from a first position to a second position to dispose the wafer 108 adjacent to a second opening 128 of the ledge 120 (as shown in FIGS. 1B and 2B, for example). In an embodiment, the chamber 102 includes a nebulizer 138 disposed between the first opening 126 and the second opening 128 for spraying a decomposition fluid onto the surface of the wafer 108 when the wafer support 110 is positioned at the second position by the motor system 112. Thus, the decomposition liquid is directly sprayed into the chamber 102 by the nebulizer 138. The decomposition fluid can be supplied from the fluid processing system 106 through one or more fluid lines, for example through a conduit 140, to a prechamber 142 that houses at least a portion of the nebulizer 138. In an embodiment, at least a portion of the nebulizer 138 is at least partially disposed within the wall of the chamber 102. For example, the chamber body 116 can define an opening 144 between the internal region 118 and the prechamber 142, where the outlet of the nebulizer 138 can discharge an aerosolized decomposition fluid into the internal region between the first opening 126 and the second opening 128 to decompose at least covering the surface 146 of the wafer 108.

[0016] In an embodiment, the chamber 102 induces pressure under the wafer 108 during decomposition to prevent the decomposition liquid from passing between the edge of the wafer 108 and the ledge 120. For example, the chamber 102 can include a gas outlet port 148 in the internal region 118 located between the second opening 128 and the bottom 124 of the chamber body 116 to introduce gas or other fluid into the internal region 118 during the introduction of the decomposition fluid from the nebulizer 138 to the internal region 118. The gas from the gas outlet port 148 is introduced at a pressure greater than the pressure of the aerosolized decomposition fluid supplied from the nebulizer 138, providing an upward flow of gas through the second opening 128 (e.g., between the edge of the wafer 108 and the ledge 120) to prevent the passage of the decomposition fluid under the wafer 108. In an embodiment, the system 100 includes a control device coupled to a gas source to introduce gas from the gas source to the gas outlet port 148 while the decomposition fluid is introduced to the surface 146 of the wafer 108 by the nebulizer 138 when the wafer support 110 is disposed in the second position. For example, the gas can be supplied to the gas outlet port 148 via a fluid line passing through the conduit 140 and the prechamber 142. In an embodiment, the motor system 112 induces rotation of the wafer support 110 during the decomposition procedure to rotate the wafer 108 when the aerosolized decomposition fluid is present in the internal region 118.

[0017] The chamber 102 can facilitate removal of fluid from the internal region 118 via one or more channels within the chamber body 116 that are in fluid communication with one or more drains, such fluid being, for example, excess decomposition liquid, silicon tetrafluoride (SiF 4) can include gas, water, steam, rinse liquid, or other fluids supplied by the gas outlet port 148. For example, the chamber body 116 can include a base portion 200, an intermediate portion 202, and a top 204 (such as shown in FIG. 2B) stacked on one another (e.g., via interlocking grooves). The base portion 200 can define one or more drains 206 (e.g., drains 206A and 206B) that provide an outlet from the internal region 118 of the chamber 102 to one or more drain receivers (not shown) via a drain conduit. In an embodiment, the drain 206A is fluidly coupled to a channel within the chamber body 116 to provide access to the drain 206A for fluid located between the first opening 126 and the second opening 128. For example, the intermediate portion 202 can define one or more channels 208 at least a portion of which extends through the intermediate portion and is vertically aligned with at least a portion of one or more channels 210 formed by the base portion 200. The channels 208 are disposed between the inner surface 212 (e.g., of the top 204, the intermediate portion 202, or a combination thereof) of the chamber body 116 and the ledge 120 such that fluid held in the internal region 118 between the lid 130 and the second opening 128 or the surface 146 of the wafer 108 can flow into the channels 208, into the channels 210, and out of the drain 206A. In an embodiment, the drain 206B allows rinse liquid or other fluid to exit the internal region 118 during a rinse procedure (described herein in relation to FIG. 2C).

[0018] Following the breakdown of wafer 108, system 100 can transition to a scanning configuration that allows access to the surface 146 of wafer 108 by scanning arm assembly 104 without moving wafer 108 to another scanning system. To transition to the scanning configuration, motor system 112 moves wafer support 110 from a second position adjacent to second opening 128 to a first position adjacent to first opening 126 or, alternatively, closer to the top 122 of chamber body 116 to position it to permit access to the surface 146 of wafer 108 by scanning arm assembly 104. Scanning arm assembly 104 generally includes a rotatable arm support 300 coupled to a nozzle housing 302 that supports a nozzle 304 configured to introduce a scanning fluid onto the surface 146 of wafer 108 and recover the scanning fluid from the surface 146 of wafer 108. Motor system 112 controls rotation of rotatable arm support 300, vertical positioning of rotatable arm support 300, or a combination thereof to position nozzle housing 302 and nozzle 304 from one or more positions in rinse station 114 (e.g., as shown in FIG. 2A) to one or more positions adjacent to or above wafer 108 (e.g., as shown in FIG. 4). Exemplary embodiments of nozzle 304 are further described herein with reference to FIGS. 7A-7L. In an embodiment, rotatable arm support 300 positions nozzle 304 adjacent to wafer 108 when wafer support 110 is positioned in the first position by motor system 112 and moves nozzle 304 rotationally or otherwise to position nozzle 304 out of the path from the open position to the closed position of lid 130 when wafer support 110 is positioned in the second position by motor system 112.

[0019] With the nozzle 304 positioned adjacent to or above the wafer 108 (e.g., as shown in FIG. 4), the fluid processing system 106 can control the introduction of scanning fluid to and from the nozzle 304 to facilitate the scanning procedure of the surface 146 of the wafer 108. Referring to FIGS. 7A - 7D, an exemplary embodiment of the nozzle 304 is shown. The nozzle 304 is configured to deliver a fluid flow across the surface 146 of the wafer 108, which can cover a larger surface area of the wafer 108 in a shorter time than moving spot-sized droplets onto the wafer 108. The fluid flow is directed onto the surface 146 of the wafer 108 by the nozzle 304 and controllably scans the desired surface area of the wafer 108. In an embodiment, the nozzle 304 guides the fluid flow substantially across the entire surface 146 in one rotation of the wafer 108. In an embodiment, a wedge of the surface 146 (e.g., a sector or a portion of the wafer 108) can be scanned in a portion of one rotation of the wafer 108. The nozzle 304 includes a nozzle body 500 that defines an inlet port 502, an outlet port 504, a first nozzle port 506, a second nozzle port 508, and a nozzle hood 510. The nozzle 304 can also include one or more mounting openings for mounting the nozzle 304 within the nozzle housing 302. The inlet port 502 and the outlet port 504 receive fluid lines for directing the fluid flow to and from the nozzle 304 during operation of the system 100. For example, the nozzle 304 receives fluid by the action of a first pump (e.g., a syringe pump) that pushes the fluid into the nozzle 304 from a holding line or loop (e.g., a sample holding loop), where the fluid is directed to the inlet port 502 and passes through a channel 503 in the nozzle body 500 that fluidly connects the inlet port 502 and the first nozzle port 506. Next, the fluid is deposited onto the surface 146 of the wafer 108 through the first nozzle port 506. The fluid is directed along the surface 146 of the wafer 108 as a continuous fluid stream through a channel 512 defined between the nozzle hood 510 and the nozzle body 500, and then the fluid is removed from the surface 146 of the wafer 108.For example, the fluid can be removed from the surface 146 via the action of a second pump (e.g., a syringe pump) that pulls the fluid through the second nozzle port 508 at the end of the channel 512 distal to the first nozzle port 506 through the fluid communication between the outlet port 504 and the second nozzle port 508 via the nozzle body 500. Thus, the fluid is allowed to contact the wafer 108 during its movement from the first nozzle port 506 to the second nozzle port 508. The channel 512, assisted by the nozzle hood 510, allows the volume of fluid to move across the wafer. In an embodiment, the channel 512 has a volume of about 300 μL. However, the volume of the channel 512 is not limited to 300 μL and can include volumes less than 300 μL and volumes greater than 300 μL. For example, the volume of the channel 512 can supply a desired amount of fluid (e.g., a scanning fluid) to the surface 146 depending on the size of the wafer 108 processed by the system 100. The length of the channel 512 can be selected based on the size of the wafer 108 processed by the system 100, and in an embodiment, the channel 512 has a length approximately equal to the radius of the wafer 108. In an embodiment, the length of the channel 512 can be from about 20 mm to about 500 mm. For example, the length of the channel 512 can be about 150 mm (e.g., for accommodating a 300 mm diameter wafer), about 100 mm (e.g., for accommodating a 200 mm diameter wafer), about 225 mm (e.g., for accommodating a 450 mm diameter wafer).

[0020] The nozzle hood 510 extends from the nozzle body 500 adjacent to each of the first nozzle port 506 and the second nozzle port 508, defining a channel 512 between the nozzle hood 510 and the nozzle body 500 between the first nozzle port 506 and the second nozzle port 508. The nozzle hood 510 can further extend such that the nozzle hood 510 surrounds the first nozzle port 506 and the second nozzle port 506 within the nozzle hood 510 (e.g., as shown in FIG. 7C), and includes each of the first nozzle port 506 and the second nozzle port 508 within the channel 512. In an embodiment, the nozzle body 500 includes substantially opposing sidewalls 514 that traverse the nozzle 304. The opposing sidewalls 514 each include tapered wall portions 516 that are joined or otherwise extend to provide opposing portions 518. In an embodiment, the opposing portions 518 are substantially perpendicular to form at least a portion of the nozzle hood 510. The nozzle 304 can be formed from a single integral piece, or portions of the nozzle 304 can be formed separately and joined together by fusion or other means. In an embodiment, the nozzle 304 is formed from chlorotrifluoroethylene (CTFE), polytetrafluoroethylene (PTFE), or a combination thereof.

[0021] The channel 512 of the nozzle 304 has an elongated shape with rounded ends 513A, 513B. By providing, for example, more consistent delivery and uptake of fluid through the nozzle 304, the rounded ends can promote superior fluid handling characteristics compared to angled ends. In an embodiment, the first nozzle port 506 (where fluid is dispensed from the nozzle 304 onto the wafer 108) is positioned to contact the edge of the rounded end 513A of the channel 512. Such positioning can assist in cleanly severing the fluid flow from the first nozzle port 506 when all the fluid is introduced onto the wafer 108 while avoiding segmentation of the fluid on the surface of the wafer 108. In an aspect, the rotatable arm support 300 rotates the nozzle housing 302 to extend the rounded end 513A of the nozzle 304 over the edge of the wafer 108 (e.g., in accordance with a scanning procedure), facilitating uptake of the fluid flow through the second nozzle port 508 via operation of the fluid processing system 106. For example, as shown in FIG. 6, the nozzle is positioned at a first location (e.g., a scanning location) at a first time (t1), whereby the channel 512 is positioned over the surface 146. The rotatable arm support 300 then rotates the nozzle housing 302 at a second time (t2) such that the rounded end 513A extends beyond the edge of the wafer 108 (e.g., overhangs the edge) at a second location rotated approximately 7 degrees from the first location. In an embodiment, the second nozzle port 508 is positioned substantially at the center of the rounded end 513B distal to the first nozzle port 506. In contrast to contacting the edge of the rounded end 513B, positioning the second nozzle port 508 at the center of the rounded end 513B can facilitate uptake of the fluid while maintaining the fluid flow on the surface 146 without partitioning the fluid flow to precisely control the movement of the fluid on the surface 146 of the wafer 108.

[0022] In an embodiment, the nozzle hood 510 defines a plurality of channels for guiding a fluid flow across the surface 146 of the wafer 108. For example, referring to FIGS. 7E-7L, the nozzle 304 is shown with the nozzle hood 510 defining an inner channel 700 and one or more outer channels (channels 702, 704 are shown) disposed longitudinally along the nozzle body 500. The nozzle hood 510 is shown as having a first hood portion 706 and a second hood portion 708 disposed within the nozzle hood 510 formed by the first hood portion 706. The inner channel 700 is defined by an inner region surrounded by the second hood portion 708, and the outer channel 702 is defined by a region surrounded between the first hood portion 706 and the second hood portion 708. The first nozzle port 506 and the second nozzle port 508 are each disposed within an inner region surrounded by the second hood portion 708 at a first end 710 of the nozzle hood 510 and a second end 712 of the nozzle hood 510, respectively.

[0023] Nozzle 304 can direct fluid from inner channel 700 to outer channels 702, 704 during introduction of fluid from nozzle 304 to wafer 108, and direct fluid from outer channels 702, 704 to inner channel 700 during uptake of fluid from wafer 108 to nozzle 304. For example, nozzle hood 510 includes a gap 714 at a second end 712 to fluidly connect inner channel 700 and outer channels 702, 704. In an embodiment, gap 714 is defined by an opening of a second hood portion 708 between a position of a second nozzle port 508 at the second end 712 of nozzle hood 510 and a first hood portion 706, and allows passage of fluid between first inner channel 700 and outer channels 702, 704 while maintaining and containing fluid in a fluid configuration on surface 146 of wafer 108 within nozzle hood 510. For example, second end 712 is typically disposed at or adjacent to the center of wafer 108, which limits the tangential force applied to the fluid, which helps maintain a continuous fluid flow within nozzle 304 as opposed to breaking the fluid flow and having uncontrolled liquid on wafer 108 outside of nozzle hood 510. Additionally or alternatively, nozzle 304 can include additional gaps at different positions of gap 714 or second hood portion 708.

[0024] An exemplary flow path is shown with reference to FIGS. 7G-7I. Fluid is introduced into the inner channel 700 through the first nozzle port 506. The fluid flows along the surface 146 of the wafer 108 within the inner channel 700 until it reaches the gap 714. Next, the fluid can flow through the gap 714 along the surface 146 into each of the outer channels 702, 704. The first hood portion 706 and the second hood portion 708 direct the fluid within the outer channels 702, 704 back towards the first end 710 of the nozzle hood 510. The amount of fluid introduced into the first nozzle port 506 and the height of the first nozzle port 506 above the surface 146 of the wafer 108 will determine whether there is sufficient fluid to pass through the outer channels 702, 704, whether the fluid is completely maintained within the inner channel 700, or, if sufficient fluid is present, how far the fluid will pass along the outer channels 702, 704. In an embodiment, the outer channels 702, 704 provide an operating buffer with respect to the height of the nozzle 304 above the wafer 108 or variations in the height of the nozzle 304 above the wafer 108 during rotation of the wafer 108 relative to the nozzle 304. In an exemplary embodiment, the nozzle 304 can vary with respect to a height difference between the nozzle 304 and the surface 146 from about 0.2 mm to about 0.8 mm (e.g., for a sample volume from about 250 μL to about 550 μL). The outer channels 702, 704 keep the fluid flow under tension and vary the volume of fluid held between the inner channel 700 and the surface 146 while maintaining a continuous liquid flow across the nozzle 304 (e.g., by the outer channels 702, 704 absorbing or releasing liquid as needed). Fluid recovery is shown in the exemplary embodiment of FIG. 7I. The fluid held within the outer channels 702, 704 is recovered along with the flow of fluid held within the inner channel 700. For example, since the fluid is maintained as a continuous liquid flow between the inner channel 700 and the outer channels 702, 704, the fluid can be recovered by a single port (shown as the second nozzle port 508 in FIG. 7I, but alternatively could be another nozzle port such as the first nozzle port 506 or a central nozzle port).

[0025] In an embodiment, the nozzle 304 can include one or more additional or alternative fluid ports for introducing fluid to or removing fluid from the surface 146. For example, the nozzle 304 can include a third nozzle port 716 disposed within the inner channel 700 between the first end 710 and the second end 712 of the nozzle hood 510. The third nozzle port 716 can be in fluid communication with one or more inlet or outlet ports defined by the nozzle body 500 via, for example, one or more channels passing through the nozzle body 500. In an embodiment, the third nozzle port 716 is disposed at a generally central position along the longitudinal direction of the inner channel 700 such that during the filling operation of the nozzle 304, fluid moves simultaneously towards the first end 710 and the second end 712 within the inner channel 700 (e.g., as shown in FIG. 7J). When the fluid fills the inner channel 700 from the fluid supplied through the third nozzle port 716, the fluid can pass through the gap 714 and fill at least a portion of the outer channels 702, 704 (e.g., as shown in FIG. 7K). Fluid recovery can then occur by withdrawing the fluid through a recovery port (e.g., the first nozzle port 506, the second nozzle port 714 - shown in FIG. 7L, the third nozzle port 716, another port, etc.) as described herein.

[0026] The position of nozzle 304 above the surface 416 of wafer 108 can affect the amount of fluid supported within channel 512 during the scanning procedure. System 100 can include a zeroing procedure to ensure that a desired height above surface 416 is achieved prior to introduction of the scanning fluid to the nozzle, to facilitate a desired amount of fluid guided by nozzle hood 510 along surface 146 of wafer 108. Exemplary zeroing procedures are shown in FIGS. 8A-8C, where side views of scanning arm assembly 104 are shown in accordance with various embodiments of the present disclosure. First nozzle port 506 and second nozzle port 508 facilitate alignment of nozzle 304 with respect to wafer 108 such that they are horizontal with respect to surface 146 of wafer 108 where fluid is applied and removed. System 100 can receive alignment or leveling procedures as needed to ensure that nozzle 304 is horizontal with respect to wafer 108 held by chamber 102, for each wafer 108 processed by system 100 (e.g., between scanning of a first wafer removed from chamber 102 and scanning of a second wafer introduced into chamber 102), or prior to a next scanning procedure. Generally, nozzle 304 is movably coupled to nozzle housing 302 to allow nozzle 304 to have a range of motion with respect to nozzle housing 302 while being supported by nozzle housing 302. Nozzle housing 302 defines an opening 520 through which at least a portion of nozzle 304 can pass when transitioning between an extended position (e.g., shown in FIG. 8A) and a retracted position (e.g., shown in FIGS. 8B, 8C). For example, the top of nozzle 304 can be disposed within nozzle housing 302, where an additional portion of nozzle 304 can be introduced into the interior of nozzle housing 302 through opening 520 when nozzle 304 transitions from the extended position to the retracted position. For example, when nozzle 304 is disposed to contact zeroing surface 522, nozzle hood 128 can contact surface 522 and push nozzle 304 into a horizontal position with respect to surface 522.Next, the nozzle housing 302 can be operative to lock the position of the nozzle 304 to a predetermined position to keep the nozzle 304 horizontal with respect to the surface 522 when the nozzle 304 is lifted from the surface 522 (e.g., to a scanning position). The nozzle housing 302 can include a mechanical, electrical, or electromechanical locking device for releasably securing the nozzle 304 to the nozzle housing 302. In an embodiment, the surface 522 includes the surface 146 of the wafer 108, the surface of the wafer support 110 (e.g., before loading the wafer 108 onto the wafer support 110), the surface of the rinse station 114, or another surface having a structure that matches the level characteristics of the semiconductor wafer, and when the nozzle 304 contacts the surface 522, the nozzle hood 128, the first nozzle port 506, the second nozzle port 508, etc. are appropriately positioned with respect to the wafer 108.

[0027] In an embodiment, the nozzle mount assembly 500 includes a nozzle housing 302 for coupling the nozzle 304 to the rotatable arm support 300. The nozzle 304 can be coupled to the nozzle housing 302 via a coupler 524 that defines an opening 526 for interacting with a protrusion 528 of the nozzle housing 302. The protrusion 528 has a width or diameter smaller than the width or diameter of the opening 526 such that when the scanning arm assembly 104 is in a first state (e.g., a leveling state), the top of the opening 526 rests on the protrusion 528, providing a low or extended position of the nozzle 304 relative to the nozzle housing 302 via the coupler 524 (e.g., as shown in FIG. 8A). The system 100 can perform an alignment or leveling procedure by lowering the nozzle housing 302 onto the rotatable arm support 300 to bring the nozzle 304 into contact with the surface 522 (e.g., as shown in FIG. 8B). For example, when the nozzle 304 contacts the surface 522, the coupler 524 is pushed upward relative to the protrusion 528 such that the protrusion 528 no longer supports the coupler 524 via contact with the top of the opening 526. Following contact of the nozzle 304 with the surface 522, the nozzle 304 is in a retracted position and the system 100 can actuate a lock structure 530 (e.g., integrated within the nozzle housing 302) to fix the position of the nozzle 304 relative to the nozzle housing 302. For example, the coupler 524 can include a ferromagnetic material to be fixed by a magnetic field generated by an electromagnet incorporated into the lock structure 530. In an exemplary embodiment, an electromagnet is shown as part of the lock structure 530, but other lock structures including, but not limited to, pneumatic solenoid actuators, mechanical locks, electromechanical locks, etc. can also be utilized.

[0028] The nozzle housing 302 may include a sensor for monitoring the position of the nozzle 304 relative to the nozzle housing 302 to determine whether the nozzle 304 is in an extended state, a retracted state, or a different position. For example, in an embodiment, the nozzle housing 302 includes a sensor 532 for detecting the presence or absence of the coupler 524 and generating or ceasing to generate a signal received by the controller of the system 100. The sensor 532 can include an optical switch having a light source on a first side of the coupler 524 and a detector on a second, opposing side of the coupler 524. The coupler 524 can include an index cutout through which a portion of it passes between the light source and the detector of the sensor 532. When the nozzle 304 is in the extended position (e.g., the locking structure 530 is not engaged), light from the light source passes through the index cutout of the coupler 524 and is detected by the detector on the other side of the coupler 524. The sensor 532 then outputs a signal indicating the detection of light or ceases to output a signal, thereby indicating to the system 100 that the nozzle 304 is in the extended position. When the nozzle 304 is in a retracted position, such as after being leveled on the surface 522, the body of the coupler 524 is disposed between the light source and the detector of the sensor 532, blocking the light from reaching the detector. The sensor 532 will output a signal indicating that the light source is not detected or will cease to output a signal. Such a signal or its absence indicates to the system 100 that the nozzle 304 is in the retracted position (e.g., supported by the nozzle housing 302 by the locking structure 530). The operation of the sensor 532 can provide a system check to confirm that the nozzle 304 is still stored and leveled after the period of operation. A change in the output from the sensor 532 can indicate that the re-leveling procedure may be appropriate, that the locking structure 530 should be evaluated, etc. Alternatively, the index cutout can be repositioned such that the detector aligns with the index cutout when the nozzle 304 is in the retracted position and the body of the coupler 524 blocks the light when the nozzle 304 is in the extended position.

[0029] When the nozzle 304 is leveled with respect to the surface 522 and locked in place via the locking structure 530, the rotatable arm support 300 can lift the nozzle 304 from the surface 522 (e.g., as shown in FIG. 8C) while maintaining the nozzle 304 in the leveled position. The rotatable arm support 300 can then place the nozzle 304 in a scanning position or, alternatively, move the nozzle 304 (e.g., to enable placement of the wafer 108 on the wafer support 110 if the surface 522 used to level the nozzle 304 is the wafer support 110).

[0030] The nozzle housing 302 can include one or more sensors to facilitate introduction of fluid to and removal of fluid from the nozzle 304. For example, in an embodiment, the nozzle housing 302 includes one or more sensors (sensors 534A, 534B are shown) adjacent to either or both of the inlet port 502 and the outlet port 504 of the nozzle 304 to control the operation of the fluid processing system 106 to control the flow of fluid entering and exiting the nozzle 304. The sensors 534A, 534B can include optical sensors, capacitance sensors, ultrasonic sensors, or other sensors, or combinations thereof, to sense the flow or absence of liquid in the fluid lines of the system 100. For example, the system 100 includes fluid lines from a fluid processing system coupled to the fluid line couplers 536A, 536B through which the sensors 534A, 534B can each detect the presence or absence of fluid therein. The output signal, or lack thereof, can control the operation of one or more components of the fluid processing system 106, including but not limited to pumps used to introduce fluid to or remove fluid from the nozzle 304.

[0031] System 100 facilitates a rinse procedure for wafer 108 and for nozzle 304 that follows a scanning procedure. Referring to FIG. 2C, chamber 102 is shown in a rinse configuration to facilitate rinsing of wafer 108. To transition to the rinse configuration, motor system 112 can position wafer support 110 from a first position (e.g., a scanning position) adjacent to first opening 126 or other position to a rinse position between ledge 120 and bottom 124 of chamber body 116. Rinse fluid is introduced onto wafer 108 provided in system 100, such as via a rinse port on nozzle housing 302, whereby motor system 112 can rotate wafer 108 to induce removal of the rinse fluid. The rinse fluid then strikes the interior of chamber body 116 and can flow to drain 206B and out of interior region 118 of chamber 102. To clean nozzle 304, rotatable arm support 300 can position nozzle 304 relative to one or more troughs of rinse station 114. For example, rinse station 114 can include a first trough 115A (e.g., shown in FIG. 5) having an elongated channel into which rinse fluid is introduced from a rinse fluid source to interact with nozzle hood 510, channel 512, or other portions of nozzle 304. Nozzle 304 is shown positioned within first trough 115A in FIGS. 1A, 1B. Rinse station 114 can also include a second trough 115B having an elongated channel coupled to a dry gas source (e.g., nitrogen or other inert gas) to introduce dry gas into the elongated channel to impinge on nozzle 304. In FIG. 5, nozzle 304 is shown positioned within second trough 115B.

[0032] Referring now to FIGS. 9A - 10, an exemplary fluid processing system 106 of system 100 is described in accordance with various embodiments of the present disclosure. For example, the fluid processing system 106 can facilitate the preparation of blanks of chemicals utilized by system 100 for analysis by an analysis system, can facilitate the preparation of decomposition fluid on - demand and in desired ratios for use in chamber 102, can facilitate the preparation of scanning fluid on - demand and in desired ratios for use in chamber 102, and can enable combinations thereof. As shown, the fluid processing system 106 includes a pump system including pumps 600, 602, 604, 606, 608, 610, and 612, and draws in and expels fluid through the fluid processing system to interact with other components of system 100 (e.g., nozzle 304), the analysis system, etc. The pump system is shown incorporating syringe pumps, although system 100 can utilize different pump types or systems, combinations of pump types or systems, etc. An example configuration of the fluid processing system 106 is shown in FIG. 10, where decomposition fluid is introduced into the nebulizer 138 of chamber 102 during the decomposition procedure of wafer 108. Pump 612 can draw hydrofluoric acid (HF) or other decomposition fluid from a decomposition fluid source 613 into a holding line (e.g., decomposition fluid holding loop 614) having a first - configured valve 616 and a first - configured valve 618. In a second configuration of valve 616, it is possible to introduce gas from a gas source 619 into the fluid line holding the decomposition fluid to provide a barrier between the decomposition fluid and the working fluid used to expel the decomposition fluid into the nebulizer 138. In a second configuration of valve 618, pump 612 can draw out a working fluid (e.g., deionized water or other fluid), whereby valve 618 is switched to a first position and valve 616 is switched to a third configuration to provide fluid communication between pump 612 and nebulizer 138, whereby pump 612 pushes the working fluid against the decomposition fluid held in the decomposition fluid valve holding loop 614 (e.g., through any intermediate gap) to introduce the decomposition fluid into the nebulizer 138.Following the decomposition of wafer 108, system 100 can scan wafer 108 for impurity determination.

[0033] Referring to FIG. 9A, fluid processing system 106 is shown in an exemplary chemical loading configuration. Pumps 604, 606, and 608 each draw chemicals from chemical sources 620, 622, and 624 via valve 626 in a first valve configuration. The chemicals are, for example, hydrofluoric acid (HF), hydrogen peroxide (H 2 O 2) may include deionized water (DIW) or other fluids. In the second valve configuration of valve 626 (shown in FIG. 9A), each of pumps 604, 606, and 608 is fluidly coupled to a fluid line connector (e.g., manifold 628 or other connector), such that the chemicals drawn by each pump are permitted to be combined and mixed. The combined fluid is directed to valve 630, which in the first valve configuration directs the combined fluid to a hold line (e.g., hold loop 632). In an embodiment, the system controller independently controls the operation of each of pumps 604, 606, and 608 to control the flow rate of each fluid handled by each pump, thereby providing a controlled composition of the mixed fluid directed to hold loop 632 after mixing. In an embodiment, the first fluid mixture can be used to interact with wafer 108 during the first scan procedure, and the second fluid mixture can be prepared on demand with different operation controls of pump systems 604, 606, and 608 to introduce the second fluid mixture to interact with wafer 108 during the second scan procedure. Additional fluid mixtures can be prepared on demand and introduced into wafer 108 as desired. In an embodiment, hold loop 632 has a volume that supports the scan procedures of multiple wafers without the need for replenishment. For example, a scan solution can be prepared, where a portion of the scan solution (e.g., a "blank 1" sample) can be sent to the analysis system to verify that the solution is within the operating constraints for use on the wafer. The remainder of the scan solution in hold loop 632 can then be used in multiple scan procedures in a state where the scan solution has been pre-verified to be suitable for use. An example of loading a chemical blank for analysis is shown with reference to FIG. 9B.

[0034] Referring to FIG. 9B, fluid processing system 106 shows an exemplary nozzle bypass configuration for sending a chemical blank for analysis without passing the blank through nozzle 304. In the nozzle bypass configuration, pump 610 is in fluid communication with holding loop 632 (e.g., with valve 630 of the second valve configuration), and pumps the fluid held in holding loop 632 through valve 636 of the first valve configuration and valve 638 of the first valve configuration into a sample holding line (e.g., sample holding loop 634). When the fluid is isolated within sample holding loop 634, fluid processing system 106 can switch its configuration to a sample injection configuration to transfer the sample to an analysis system for analysis. The analysis system can include, but is not limited to, inductively coupled plasma spectroscopic instrumentation for trace element determination.

[0035] Referring to FIG. 9C, fluid processing system 106 is shown in an exemplary chemical injection configuration, whereby the holding loop 632 is in fluid communication with one or more transfer mechanisms. For example, in an embodiment, valve 638 places the holding loop 632 in fluid communication with a gas transfer source (e.g., nitrogen pressure source 640) to push the sample held in the holding loop 632 through transfer line 642 to the sample analysis system via valve 644 in a first valve configuration and valve 646 in a first valve configuration, in a second configuration (shown in dashed lines in FIG. 9C). In an embodiment, valve 638 places the holding loop 632 in a first valve configuration (shown in solid lines in FIG. 9C) that pushes the sample held in the holding loop 632 through transfer line 642 to the sample analysis system via valve 644 in a first valve configuration and valve 646 in a first valve configuration, and in a third valve configuration (shown in FIG. 9D) that is fluidly coupled to pump 602 via valve 648. Pump 602 uses a working solution (e.g., deionized water source 650 from DIW) to push the sample into transfer line 642. In an embodiment, fluid processing system 106 introduces a fluid gap between the working solution and the sample, such as by introducing air bubbles (e.g., from nitrogen pressure source 640) into the holding loop 632 prior to pushing the working solution. In an embodiment, fluid processing system 106 includes a sensor 652 adjacent to transfer line 642 to detect the presence or absence of fluid in transfer line 642. For example, sensor 652 can detect the trailing edge of the sample pushed out of holding loop 632 (e.g., by detecting air bubbles in the line), where the sensor signal or its absence can notify the controller of fluid processing system 106 to switch the configuration of valves 646, 648 to a second valve configuration (shown in dashed lines in FIG. 9C) to fluidly connect pump 602 to transfer line 642 via fluid line 654. In such a configuration, other parts of fluid processing system 106 are isolated from the transfer of the sample to the sample analyzer, allowing for the rinsing of those other parts during sample transfer.

[0036] Referring to FIG. 9D, fluid processing system 106 is shown in an exemplary nozzle loop loading configuration, whereby the holding loop 632 is in fluid communication with a nozzle holding line (e.g., nozzle holding loop 656) to prepare to introduce fluid into nozzle 304. In the nozzle loop loading configuration, pump 610 is in fluid communication with the holding loop 632 (e.g., with valve 630 in the second valve configuration) and pumps the fluid held in the holding loop 632 through valve 636 in the second valve configuration and valve 658 in the first valve configuration into the nozzle holding loop 632. In an embodiment, the nozzle holding loop 632 has a volume of about 500 μL, while the holding loop 632 has a volume of about 5 - 20 mL to enable filling of the nozzle holding loop 632 for each preparation of the scanning solution through the operation of pumps 604, 606, 608. When the fluid is isolated within the nozzle holding loop 656, the fluid processing system 106 can be configured to the nozzle load configuration to transfer the fluid to the nozzle 304 for the scanning procedure of the wafer 108 or to take a nozzle blank sample (e.g., introducing the fluid onto an inert surface such as the surface of the rinse station 114 and removing the sample from the inert surface for analysis).

[0037] Referring to FIG. 9E, the fluid processing system 106 is shown in an exemplary nozzle load configuration, whereby the pump 600 is in fluid communication with the nozzle holding loop 656, and the valve 658 and the nozzle 304 form a second valve configuration for extruding fluid from the nozzle holding loop 656 to the nozzle 304. In an embodiment, during the scanning procedure, while the nozzle 304 is loaded by the pump 600, the wafer 108 is held stationary. In an embodiment, the system 100 performs a zeroing operation of the nozzle 304 (e.g., as described with reference to FIGS. 8A-8C) before filling the nozzle 304 with fluid. Then, the nozzle is placed at a scanning position on the wafer 108, and the pump 600 can operate to extrude fluid from the nozzle holding loop 656 through the nozzle body 500 to the inlet port 506 of the nozzle 304, through the first nozzle port 506, and onto the surface 146 of the wafer 108 (or an inert surface for nozzle blank analysis). In an embodiment, the controller of the fluid processing system 106 controls the operation of the pump 600 based on the sensed signal or the lack thereof from sensors 534A and 534B that detect the presence or absence of fluid introduced into or exiting the nozzle 304 indicating the filled nozzle 304. In an embodiment, the detection of the front end of the fluid by the sensor 534A causes the pump 600 to reduce the flow rate of the fluid introduced into the nozzle 304 (e.g., from a flow rate of about 50 μL / min to a flow rate of 10-20 μL / min). In an embodiment, the pump 600 operates to fill the nozzle 304 until the rear end of the fluid is registered by the sensor 534B. Then, the pump 600 operates for a certain period of time to push the rear end of the fluid into the nozzle 304 and then stops operating, whereby all the fluid previously held by the nozzle holding loop 656 can be placed on the surface 146 of the wafer 108 (or an inert surface if nozzle blanking is being performed). Then, the fluid is supported on the surface 146 by the nozzle 304. In an embodiment, a portion of the fluid can protrude from the nozzle hood 510 but can be maintained in contact with the remainder of the fluid in the channel 512 due to, for example, adhesion. Then, the system 100 proceeds to scan the nozzle 304 over the surface 146 of the wafer 108.During the scanning procedure, the motor system 112 rotates the wafer 108 (e.g., at about 2 rpm), whereby the fluid supported by the nozzle 304 is transferred onto the surface 146 of the wafer 108. In an embodiment, the fluid interacts with substantially the entire surface 146 of the wafer 108 in one rotation of the wafer 108, however, additional rotations can be performed. For example, the scanning procedure can include two rotations of the wafer 108 by the motor system 112 to allow the fluid to contact the entire surface of the wafer 108 twice. Following the scan, the nozzle can be rotated such that the end of the nozzle extends beyond the end of the wafer (e.g., as described with reference to FIG. 6) to assist in the uptake of fluid from the surface to the nozzle 304 through the second nozzle port 508.

[0038] Referring to FIG. 9F, the fluid processing system 106 is shown in an exemplary recovery configuration, whereby the pump 602 is in fluid communication with the nozzle 304 via valve 648 in a first configuration, valve 638 in a third configuration, and valve 644 in a second configuration. In the recovery configuration, the pump 602 operates to draw fluid from the surface 146 of the wafer 108 through the second nozzle port 508 and out of the nozzle 304 via the outlet port 504, where the fluid is drawn into the sample holding loop 634. A sensor (e.g., sensor 660) can be utilized to control the operation of the pump 602, similar to the control of the pump 600 by the output of the sensors 534A / 534B. For example, the sensor 660 can detect the trailing edge of the fluid flowing into the sample holding loop 634, which can send a signal to stop the operation of the pump 602 (e.g., via a controller of the fluid processing system 106). Once the fluid is held in the sample holding loop 634, the fluid processing system 106 can transition to the chemical injection configuration described with reference to FIG. 9C and introduce the fluid to the sample analyzer via the transfer line 642. In an embodiment, the sample holding loop 634 has a volume (e.g., 1.5 mL) larger than the volume of fluid supplied to the nozzle 304 (e.g., 500 μL) to allow for the complete recovery of the fluid following the scan.

[0039] Electromechanical devices (e.g., electric motors, servos, actuators, etc.) may be coupled to or embedded within the components of system 100 to facilitate autonomous operation either by being incorporated within system 100 or via control logic that drives system 100 from an external source. The electromechanical devices may be configured to cause movement of the devices and fluids according to various procedures such as those described herein. System 100 includes, or can be controlled by, a computing system having a processor or other controller configured to execute computer-readable program instructions (i.e., control logic) from a fixed carrier medium (e.g., a storage medium such as a flash drive, hard disk drive, solid state disk drive, SD card, optical disk, etc.). The computing system can be connected to various components of system 100 either by a direct connection or via one or more network connections (e.g., local area network (LAN), wireless area network (WAN or WLAN), one or more hub connections (e.g., USB hub), etc.). For example, the computing system can be communicatively coupled to chamber 102, motor system 112, the valves described herein, the pumps described herein, other components described herein, components that direct their control, or combinations thereof. When executed by the processor or other controller, the program instructions can cause the computing system to control system 100 (e.g., control pumps, select valves, actuators, spray nozzles, positioning devices, etc.) according to one or more of the operating modes described herein.

[0040] It should be recognized that the various functions, control operations, processing blocks, or steps described throughout this disclosure can be implemented by any combination of hardware, software, or firmware. In some embodiments, the various steps or functions are performed by one or more of an electronic circuit, logic gate, multiplexer, programmable logic device, application specific integrated circuit (ASIC), controller / microcontroller, or computing system. The computing system can include, but is not limited to, a personal computing system, a mobile computing device, a mainframe computing system, a workstation, an image computer, a parallel processor, or any other device known in the art. In general, the term "computing system" is broadly defined to include any device having one or more processors or other controllers that execute instructions from a carrier medium.

[0041] Program instructions for implementing the functions, control operations, processing blocks, or steps as exemplified by the embodiments described herein may be transmitted via a carrier medium or stored on a carrier medium. The carrier medium may be a transmission medium such as a wire, cable, or wireless transmission link, but is not limited thereto. The carrier medium may also include, but is not limited to, a fixed signal-bearing medium or storage medium such as a read-only memory, random access memory, magnetic disk, or optical disk, a solid or flash memory device, or magnetic tape.

[0042] Furthermore, it will be understood that the present invention is defined by the appended claims. Although embodiments of the present invention have been illustrated, it is apparent to those skilled in the art that various modifications can be made without departing from the scope and spirit of the present disclosure.

Claims

1. 1. A nozzle for scanning a surface of a material, comprising: a nozzle body defining one or more nozzle ports for receiving a fluid for introduction to a surface of the material and for withdrawing the fluid from the surface of the material; a nozzle hood extending from a nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel fluidly coupled to the one or more outer channels through one or more gaps defined by the nozzle hood.

2. 2. The nozzle of claim 1, wherein the one or more outer channels include a first outer channel and a second outer channel, and a portion of the first outer channel disposed longitudinally along the nozzle body is separated from a portion of the second outer channel disposed longitudinally along the nozzle body by an inner channel.

3. 2. The nozzle of claim 1, wherein the nozzle hood includes a first hood portion and a second hood portion, the second hood portion being disposed within the nozzle hood defined by the first hood portion.

4. The nozzle of claim 3 , wherein the inner channel is defined by an interior area surrounded by the second hood portion.

5. The nozzle of claim 4 , wherein the one or more nozzle ports include a first nozzle port disposed in an interior area surrounded by the second hood portion.

6. 5. The nozzle of claim 4, wherein the one or more nozzle ports include a first nozzle port and a second nozzle port, the first nozzle port being disposed in an interior area surrounded by the second hood portion at a first end of the nozzle hood and the second nozzle port being disposed in an interior area surrounded by the second hood portion at a second end of the nozzle hood distal from the first end.

7. The nozzle of claim 6 , wherein the one or more nozzle ports include a third nozzle port disposed in an interior area surrounded by the second hood portion between the first nozzle port and the second nozzle port.

8. The nozzle of claim 4 , wherein the at least one outer channel is defined by an enclosed area between the first hood portion and the second hood portion.

9. The nozzle of claim 3 , wherein the one or more gaps include a gap defined by an opening in the second hood portion for fluidly coupling the first channel to the at least one outer channel.

10. The nozzle of claim 9 , wherein the gap is disposed at an end of the nozzle hood adjacent the nozzle port of the one or more nozzle ports.

11. The nozzle of claim 1 , wherein the surface of the material comprises a surface of a semiconductor wafer.

12. 1. A method of scanning a surface of a material with a multi-channel nozzle, comprising: introducing a scanning fluid onto a surface of the material through a nozzle, the nozzle comprising: a nozzle body defining one or more nozzle ports for receiving a fluid for introduction to a surface of the material and for withdrawing the fluid from the surface of the material; a nozzle hood extending from the nozzle body, the nozzle hood defining an inner channel longitudinally disposed along the nozzle body, the nozzle hood further defining one or more outer channels longitudinally disposed along the nozzle body, the inner channel fluidly coupled to the one or more outer channels via one or more gaps defined by the nozzle hood; directing at least a portion of the scanning fluid held within at least the inner channel through the nozzle and along the surface of the material; and removing the scanning fluid from the surface of the material through the one or more nozzle ports.

13. 13. The method of claim 12, wherein the one or more outer channels include a first outer channel and a second outer channel, and a portion of the first outer channel disposed longitudinally along the nozzle body is separated from a portion of the second outer channel disposed longitudinally along the nozzle body by an inner channel.

14. 13. The method of claim 12, wherein the nozzle hood includes a first hood portion and a second hood portion, the second hood portion being disposed within the nozzle hood formed by the first hood portion.

15. The method of claim 14 , wherein the inner channel is defined by an interior area surrounded by the second hood portion.

16. 13. The method of claim 12, wherein directing at least a portion of the scanning fluid held within at least the inner channel through the nozzle and along the surface of the material comprises directing the scanning fluid through the inner channel along the surface of the material until the scanning fluid reaches one or more gaps defined by the nozzle hood.

17. The method of claim 16 , further comprising directing the scanning fluid through the gap, along a surface of the material, and into the one or more outer channels.

18. 20. The method of claim 17, wherein the scanning fluid is maintained in a stream configuration fluidly coupled from one or more outer channels to the inner channel.

19. 17. The method of claim 16, wherein the scanning fluid is introduced to the surface of the material through a first nozzle port of the nozzle and the scanning fluid is removed from the surface of the material through a second nozzle port of the nozzle.

20. 17. The method of claim 16, wherein the scanning fluid is introduced to the surface of the material through a first nozzle port of the nozzle, and the scanning fluid is removed from the surface of the material through the first nozzle port of the nozzle.

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