Probe inspection device, probe inspection system, and probe card

Abstract

To provide a probe inspection device with which it is possible to set the actual temperature of the device to be inspected with high accuracy.SOLUTION: A probe inspection device comprises a wafer stage (201), a temperature sensor 25, a temperature adjustment mechanism (50), and a controller 21e. The wafer stage (201) has a semiconductor wafer WF mounted on a wafer mounting surface. The temperature sensor 25 has a temperature observation point exposed to the wafer mounting surface, and directly measures the temperature on the reverse side of the semiconductor wafer WF mounted on the wafer mounting surface. The temperature adjustment mechanism (50) adjusts the temperature of the wafer stage (201) by heating or cooling the wafer stage (201). The controller 21e controls the temperature adjustment mechanism (50) so that the measured temperature TMm by the temperature sensor 25 equals a target temperature.SELECTED DRAWING: Figure 15A

Description

[Technical field]

[0001] The present invention relates to a probe inspection device, a probe inspection system, and a probe card, and relates to, for example, a temperature measurement technique during a probe inspection. [Background technology]

[0002] Patent Document 1 shows a semiconductor inspection probe device capable of applying uniform pressure to all probes when probing electrode pads over a wide area. Specifically, spacers having the same thickness as the wafer are installed around the wafer mounting area on the stage of the probe device. This makes it possible to prevent the probe structure from tilting relative to the wafer surface because the probe structure is pressed against both the wafer and the spacer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2003-142537 A Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, with the increase in scale and high integration of semiconductor devices such as SoC (System on Chip), in other words semiconductor chips, the number of terminals for signals, power supplies, etc. per semiconductor chip may be, for example, several thousand or more. Therefore, when performing a probe test on such a semiconductor chip as a device under test, the number of probes to be connected to these terminals is also enormous. As a result, when determining the test temperature of the device under test during the probe test, it may be difficult to set the actual temperature of the device under test to a target temperature with high accuracy.

[0005] In detail, in order to determine the inspection temperature of the device under test, for example, the probe inspection apparatus controls the temperature of a wafer stage carrying a semiconductor wafer including the device under test based on a temperature sensor built into the wafer stage. However, for example, when the device under test is set to a high temperature via the wafer stage, heat may be dissipated via the probes at the stage where a huge number of probes are brought into contact with the device under test.

[0006] On the other hand, the device under test may generate heat during the probe test due to the increased power consumption caused by the larger scale and higher integration. The wafer stage usually has a higher thermal resistance than the device under test. For this reason, the temperature change of the device under test caused by the above-mentioned heat dissipation and heat generation is not easily conducted to the wafer stage. As a result, a discrepancy may occur between the set temperature of the wafer stage and the actual temperature of the device under test.

[0007] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0008] A probe inspection device according to one embodiment includes a wafer stage, a temperature sensor, a temperature adjustment mechanism, and a controller. The wafer stage mounts a semiconductor wafer on its wafer mounting surface. The temperature sensor has a temperature observation point exposed on the wafer mounting surface, and directly measures the temperature of the back surface of the semiconductor wafer mounted on the wafer mounting surface. The temperature adjustment mechanism adjusts the temperature of the wafer stage by heating or cooling the wafer stage. The controller controls the temperature adjustment mechanism so that the temperature measured by the temperature sensor becomes a target temperature. Effect of the Invention

[0009] By using the probe testing apparatus of the embodiment, the actual temperature of the device under test can be set with high accuracy. [Brief description of the drawings]

[0010] [Figure 1A] FIG. 1A is a schematic diagram showing an example of a configuration premise and an example of a problem in a probe inspection system according to a first embodiment. [Figure 1B] FIG. 1B is a schematic diagram showing an example of the arrangement of temperature sensors embedded in the stage surface layer in FIG. 1A. [Figure 2A] FIG. 2A is a schematic diagram showing a configuration example of a main part of a probe inspection system according to the first embodiment. [Figure 2B] FIG. 2B is a schematic diagram showing an example of the arrangement of the probes and the temperature sensors in FIG. 2A. [Diagram 3] FIG. 3 is a block diagram showing an example of the configuration of a controller in the prober in FIG. 2A. [Figure 4A] FIG. 4A is a schematic diagram showing a configuration example of a main part of a probe inspection system according to the second embodiment. [Figure 4B] FIG. 4B is a schematic diagram showing an example of the arrangement of the probe card and the temperature sensor in FIG. 4A. [Diagram 5] FIG. 5 is a schematic diagram for explaining an example of a method for predicting the actual temperature of the device under test in FIGS. 4A and 4B. [Figure 6] FIG. 6 is a block diagram showing a configuration example of a controller in the prober in FIG. 4A. [Figure 7A] FIG. 7A is a schematic diagram showing a configuration example of a main part of a probe inspection system according to the third embodiment. [Figure 7B] FIG. 7B is a schematic diagram showing a configuration example of the temperature adjustment mechanism in FIG. 7A. [Figure 8] FIG. 8 is a schematic diagram for explaining an example of a method for leveling the temperature over the entire semiconductor wafer in FIG. 7A and FIG. 7B. [Figure 9] FIG. 9 is a schematic diagram showing an example of the result of leveling the temperature across the entire semiconductor wafer using the method shown in FIG. [Figure 10] FIG. 10 is a block diagram showing a configuration example of a controller in the prober in FIG. 7A. [Figure 11]FIG. 11 is a flowchart showing an example of the process contents of the controller shown in FIG. [Figure 12] FIG. 12 is a schematic diagram illustrating an example of the processing contents of the temperature calculation unit in FIG. [Figure 13] FIG. 13 is a block diagram showing a configuration example in which the controller shown in FIG. 10 is modified in the probe inspection system according to the fourth embodiment. [Figure 14A] FIG. 14A is a flowchart showing an example of the processing contents of the controller shown in FIG. [Figure 14B] FIG. 14B is a flowchart showing an example of the processing contents of the controller shown in FIG. [Figure 15A] FIG. 15A is a schematic diagram showing a configuration example of a main part of a probe inspection system according to the fifth embodiment. [Figure 15B] FIG. 15B is a schematic diagram showing an example of the arrangement of the temperature sensors in FIG. 15A. [Figure 16] FIG. 16 is a block diagram showing a configuration example of a controller in the prober in FIG. 15A. [Figure 17] FIG. 17 is a schematic diagram for explaining an example of a prerequisite problem and a countermeasure method thereof in the probe inspection system according to the sixth embodiment. [Figure 18] FIG. 18 is a block diagram showing a configuration example of a temperature controller included in a controller in a prober in a probe inspection system according to the sixth embodiment. [Figure 19] FIG. 19 is a flow chart showing an example of the processing contents of a controller in a prober in the probe inspection system according to the sixth embodiment. [Figure 20] FIG. 20 is a supplementary diagram for explaining a part of the processing contents shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] In the following embodiments, when necessary for convenience, the description will be divided into multiple sections or embodiments, but unless otherwise specified, they are not unrelated to each other, and one is a partial or complete modification, detail, supplementary explanation, etc. of the other. Furthermore, in the following embodiments, when the number of elements, etc. (including the number, numerical value, amount, range, etc.) is mentioned, it is not limited to the specific number, and may be more or less than the specific number, unless otherwise specified or clearly limited in principle to a specific number.

[0012] Furthermore, in the following embodiments, the components (including element steps, etc.) are not necessarily essential unless otherwise specified or considered to be obviously essential in principle. Similarly, in the following embodiments, when referring to the shape, positional relationship, etc. of components, etc., it is intended to include those that are substantially similar or similar to the shape, etc., unless otherwise specified or considered to be obviously not essential in principle. The same applies to the above numerical values ​​and ranges.

[0013] Hereinafter, the embodiments will be described in detail with reference to the drawings. In all the drawings for explaining the embodiments, the same reference numerals are used for the members having the same functions, and the repeated explanations are omitted. In the following embodiments, the explanations of the same or similar parts will not be repeated as a rule unless it is particularly necessary.

[0014] (First embodiment) <Probe inspection system (prerequisite) configuration and problems> Fig. 1A is a schematic diagram showing an example of a configuration example and a problem in a probe inspection system according to a first embodiment. Fig. 1B is a schematic diagram showing an example of an arrangement of a temperature sensor 205 embedded in a stage surface layer 201 in Fig. 1A. The probe inspection system shown in Fig. 1A includes a tester 1, a prober (probe inspection device) 2, and a probe card 3.

[0015] The tester 1 comprises a tester main body 10 and a test head 11. The test head 11 comprises a driver that outputs a signal to the outside, a receiver that inputs a signal from the outside, and a power supply unit that supplies a power supply voltage or power supply current to the outside and can measure the power supply current or power supply voltage, etc. The tester main body 10 controls the output signal from the driver and the power supply from the power supply unit, etc., based on a predetermined inspection program, etc., and evaluates the input signal to the receiver and the measurement value at the power supply unit, etc.

[0016] The prober 2 includes a wafer stage 20, also called a wafer chuck, a controller 21, and a stage driving mechanism 22. The wafer stage 20 mounts and adsorbs a semiconductor wafer WF on a wafer mounting surface. A plurality of semiconductor chips CP, which are also devices under test DUT, are formed on the semiconductor wafer WF. The wafer stage 20 includes, for example, an insulating layer 204, a heater layer 203, a cooling layer 202, and a stage surface layer 201, which are stacked in this order toward the wafer mounting surface.

[0017] A plurality of temperature sensors 205 are embedded in the stage surface layer 201. The plurality of temperature sensors 205 are disposed in a substantially uniformly distributed manner within the region of the stage surface layer 201, for example, as shown in FIG 1B. The heater layer 203 heats the wafer stage 20, specifically, the stage surface layer 201. On the other hand, the cooling layer 202 cools the wafer stage 20, specifically, the stage surface layer 201.

[0018] This allows heating and cooling of the semiconductor wafer WF via the stage surface layer 201, and adjusts the inspection temperature of the device under test DUT. In this specification, the heater layer 203 and the cooling layer 202 that adjust the temperature of the wafer stage 20 and, by extension, the device under test DUT by heating or cooling the wafer stage 20 in this manner are collectively referred to as a temperature adjustment mechanism (202, 203).

[0019] The controller 21 includes, for example, a processor and a memory, and controls the entire prober 2 based on a control program stored in the memory. As one of the controls, the controller 21 controls the temperature adjustment mechanism (202, 203) so that the temperature measured by the temperature sensor 205 becomes a target temperature. Note that the controller 21 is not limited to software processing by a processor, and may be realized by hardware processing by, for example, an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array), or may be realized by a combination of software processing and hardware processing.

[0020] The probe card 3 is connected to the test head 11 via the test interface 12. The probe card 3 is configured to be detachable from each of the test head 11 and the prober 2. The probe card 3 includes a main substrate 30, a conversion substrate 31, a reinforcing plate 32, and a probe head PH to which a plurality of probes PB are attached. The reinforcing plate 32 connects the main substrate 30 and the conversion substrate 31, and fixes the connected state. The probe head PH is attached to the conversion substrate 31.

[0021] The main board 30 has a plurality of wirings that connect the test interface 12 and the conversion board 31, and transmits signals or power through these wirings. The conversion board 31 has a plurality of wirings that connect the main board 30 and the plurality of probes PB, and transmits signals or power through these wirings.

[0022] The stage driving mechanism 22 moves the wafer stage 20 in the X-axis, Y-axis, and Z-axis directions in response to instructions from the controller 21. In the specification, the surface direction of the semiconductor wafer WF or the surface direction of the wafer mounting surface of the wafer stage 20 is defined as the X-axis direction and the Y-axis direction perpendicular to the X-axis direction, and the direction perpendicular to the X-axis direction and the Y-axis direction is defined as the Z-axis direction. When inspecting a device under test DUT, the stage driving mechanism 22 moves the wafer stage 20 in the X-axis and Y-axis directions, and then moves the wafer stage 20 in the Z-axis direction so that the probe PB comes into contact with a terminal of the device under test DUT.

[0023] In such a probe inspection system, for example, when the semiconductor chip CP that is the device under test DUT is an SoC or the like, the number of terminals per semiconductor chip CP may be several thousand or more. Accordingly, the number of probes PB that contact the terminals also increases, and the overall volume of the probe PB becomes large. Here, the probe PB is made of a conductive material with a relatively small thermal resistance. For this reason, for example, when a probe PB having a large volume is brought into contact with the device under test DUT set at a high temperature, heat radiation 40b may occur from the device under test DUT toward the tester 1 installed in a room temperature environment.

[0024] Furthermore, heat 40a is also generated in the device under test DUT due to power consumption during the probe test. Therefore, the actual temperature of the device under test DUT during the probe test is a temperature at which the heat generation 40a and the heat dissipation 40b are in balance, and can be a temperature that is difficult to predict. On the other hand, the stage surface layer 201 usually has a higher thermal resistance than the semiconductor wafer WF. Therefore, the heat of the device under test DUT is easily conducted to the entire semiconductor wafer WF, but is difficult to conduct to the stage surface layer 201.

[0025] As a result, the temperature measured by the temperature sensor 205 embedded in the stage surface layer 201 does not necessarily represent the actual temperature of the device under test DUT, and may be a temperature that deviates to some extent from the actual temperature of the device under test DUT. In this case, even if the temperature adjustment mechanism (202, 203) is controlled based on the temperature measured by the temperature sensor 205, the actual temperature of the device under test DUT cannot be set to the desired test temperature. As such, in the probe test system on which the system is based, it is difficult to set the actual temperature of the semiconductor chip CP, which is the device under test DUT, with high accuracy. Therefore, it is beneficial to use the method of the embodiment described below.

[0026] <Configuration of Probe Inspection System (Embodiment)> Fig. 2A is a schematic diagram showing a configuration example of the main part of the probe inspection system according to the first embodiment. Fig. 2B is a schematic diagram showing an arrangement configuration example of the probe PB and the temperature sensor 45 in Fig. 2A. Fig. 2A shows a configuration example of a part of the probe card 3 and a part of the prober (probe inspection device) 2 from among the components described in Fig. 1A.

[0027] Unlike the case of Fig. 1A, a non-contact type temperature sensor 45 is attached to the probe card 3 shown in Fig. 2A. The temperature sensor 45 is attached to the probe card 3, more specifically, the conversion board 31 or the main board 30 (not shown), etc., so that the temperature observation point is located at a predetermined distance D from the surface of the semiconductor wafer WF, here the device under test DUT, during the probe test. As a result, the temperature sensor 45 measures the temperature of the device under test DUT in a non-contact manner during the probe test, and outputs data of the measured temperature TMm.

[0028] 2A and 2B, the temperature observation point of the temperature sensor 45 is disposed above the inner region of the device under test DUT and at a location where the multiple probes PB are not disposed. "Above" refers to the direction on the Z axis. With this arrangement, the temperature sensor 45 can measure the actual temperature of the device under test DUT that is actually being tested within the semiconductor wafer WF.

[0029] A specific example of the non-contact temperature sensor 45 is a fiber-type radiation thermometer. The radiation thermometer collects infrared rays emitted from the object to be measured, in this case the device under test DUT, at a temperature observation point and takes them into an optical fiber. The radiation thermometer detects the infrared rays transmitted through the optical fiber with an infrared sensor and converts them into temperature. When using such a temperature sensor 45, for example, the probe head PH is provided with a through hole for passing the optical fiber through, as shown in FIG. 2A.

[0030] <Controller details> Fig. 3 is a block diagram showing an example of the configuration of the controller 21a in the prober 2 in Fig. 2A. The controller 21a shown in Fig. 3 includes a communication interface (IF) 210 and a temperature controller 211. The communication interface (IF) 210 acquires the temperature TMm measured by the temperature sensor 45, more precisely, the data of the measured temperature TMm. At this time, the communication interface (IF) 210 acquires the measured temperature TMm by direct communication with the temperature sensor 45 or by indirect communication via the tester 1. In the latter case, the temperature sensor 45 temporarily outputs the data of the measured temperature TMm to the tester main body 10.

[0031] The temperature controller 211 is realized by, for example, software processing by a processor. Unlike the case of FIG. 1A, the temperature controller 211 controls the temperature adjustment mechanisms (202, 203) based on the measured temperature TMm acquired via the communication interface (IF) 210. In this example, the temperature controller 211 controls the temperature adjustment mechanisms (202, 203) so that the measured temperature TMm becomes the target temperature TMt. Specifically, the temperature controller 211 generates the operation amount MV of the temperature adjustment mechanisms (202, 203) by executing proportional integral control (PI control) or proportional integral derivative control (PID control) based on, for example, the error between the measured temperature TMm and the target temperature TMt.

[0032] <Main Effects of the First Embodiment> As described above, in the method of the first embodiment, a non-contact temperature sensor for measuring the actual temperature of the device under test is attached to the probe card, and the temperature of the wafer stage is controlled based on the temperature measured by the temperature sensor. As a result, typically, the actual temperature of the device under test can be set with high accuracy.

[0033] (Second embodiment) <Configuration of Probe Inspection System (Embodiment)> Fig. 4A is a schematic diagram showing a configuration example of the main part of a probe inspection system according to the second embodiment. Fig. 4B is a schematic diagram showing an arrangement configuration example of the probe card 3 and the temperature sensor 45 in Fig. 4A. Fig. 4A shows a configuration example of a part of the probe card 3 and a part of the prober (probe inspection device) 2 from among the components described in Fig. 1A, similar to the case of Fig. 2A.

[0034] A non-contact temperature sensor 45 is attached to the probe card 3 shown in Fig. 4A, similarly to the case of Fig. 2A. However, in this example, unlike the case of Fig. 2A, the temperature observation point of the temperature sensor 45 is disposed above the outer area, not the inner area, of the device under test DUT during probe testing. Furthermore, in this example, the probe card 3 includes a plurality of temperature sensors 45. The temperature observation points of the plurality of temperature sensors 45 are disposed approximately uniformly distributed within the probe card 3, specifically, within the area of ​​the conversion board 31, as shown in Fig. 4B, for example.

[0035] Here, in the configuration example shown in FIG. 2A and FIG. 2B described above, the temperature sensor 45 is arranged in an area inside the device under test DUT and in an area where the probe PB is not arranged. In this case, there may be restrictions on the arrangement of the terminals of the semiconductor chip CP that the probe PB contacts, or there may be restrictions on the manufacturing of the probe card 3. In addition, if the number of the probes PB itself is reduced, it may affect the test specifications. On the other hand, when the configuration example shown in FIG. 4A and FIG. 4B is used, such restrictions do not occur. Therefore, it is possible to perform probe testing on various semiconductor chips CP.

[0036] However, in the configuration example shown in Figures 4A and 4B, unlike the case of Figures 2A and 2B, the temperature sensor 45 is not disposed above the device under test DUT, so the temperature of the device under test DUT cannot be measured directly. Therefore, here, the actual temperature of the device under test DUT is predicted, for example, by a method as shown in Figure 5. Figure 5 is a schematic diagram for explaining an example of a method for predicting the actual temperature of the device under test DUT in Figures 4A and 4B.

[0037] 5 shows an example of the relationship between the temperatures TMm[1]-TMm[4] measured by the four temperature sensors 45[1]-45[4] attached to the conversion board 31 and the temperature distribution RTD formed on the semiconductor wafer WF. For example, when the device under test DUT generates a large amount of heat during the probe test, a temperature distribution RTD is formed on the semiconductor wafer WF with the position of the device under test DUT as its apex, as shown in FIG. The temperatures TMm[1]-TMm[4] measured by the four temperature sensors 45[1]-45[4] are based on this temperature distribution RTD.

[0038] On the other hand, the relative positional relationship between the mounting position of the temperature sensor 45[2], the mounting position of the temperature sensor 45[1], and the position of the device under test DUT is always fixed. Therefore, as shown in Fig. 5, the temperature of the device under test DUT can be predicted as a predicted temperature TMmP based on the temperatures TMm[2] and TMm[1] measured by the temperature sensors 45[2] and 45[1] and a predetermined predicted temperature distribution PTD. The predicted temperature distribution PTD is created in advance, for example, by performing an experiment or a temperature simulation, and is stored in memory in the form of a formula, a table, or the like.

[0039] The controller 21b may, for example, obtain the predicted temperature TMmP in this manner and control the temperature adjustment mechanisms (202, 203) so that the predicted temperature TMmP becomes the target temperature TMt. In this example, in order to perform temperature prediction, two temperature sensors 45[1], 45[2] located in one direction based on the position of the device under test DUT are used. Meanwhile, the positions and number of the temperature sensors 45 used may be changed as appropriate. However, since it is desirable to perform temperature prediction based on a temperature gradient, it is advisable to use at least two or more temperature sensors 45.

[0040] <Controller details> Fig. 6 is a block diagram showing a configuration example of the controller 21b in the prober 2 in Fig. 4A. The controller 21b shown in Fig. 6 includes a temperature prediction unit 212 in addition to the communication interface (IF) 210 and the temperature controller 211 as shown in Fig. 3. The temperature prediction unit 212 is realized, for example, by software processing by a processor. The communication interface (IF) 210 acquires temperatures TMm[k], TMm[j], ... measured by a predetermined temperature sensor 45.

[0041] The controller 21b controls the temperature adjustment mechanisms (202, 203) using a temperature prediction unit 212 and a temperature controller 211 based on the measured temperatures TMm[k], TMm[j], ... acquired via a communication interface (IF) 210. In detail, the temperature prediction unit 212 predicts the temperature of the device under test DUT as a predicted temperature TMmP based on the measured temperatures TMm[k], TMm[j], ... and the predicted temperature distribution PTD as described in Fig. 5. The temperature controller 211 generates a manipulated variable MV in the same manner as in Fig. 3, for example, so that the predicted temperature TMmP becomes a target temperature TMt, and controls the temperature adjustment mechanisms (202, 203).

[0042] <Main Effects of the Second Embodiment> As described above, by using the method of the second embodiment, it is possible to obtain almost the same effects as those described in the first embodiment, typically the actual temperature of the device under test can be set with high accuracy. Furthermore, unlike the method of the first embodiment, there are no restrictions on the terminals of the semiconductor chip CP or the probe PB, so that probe testing can be performed on various semiconductor chips CP.

[0043] (Third embodiment) <Configuration of Probe Inspection System (Embodiment)> FIG. 7A is a schematic diagram showing a configuration example of the main part of the probe inspection system according to the third embodiment. FIG. 7B is a schematic diagram showing a configuration example of the temperature adjustment mechanism (202, 203) in FIG. 7A. As in the case of FIG. 4A, FIG. 7A shows a configuration example of a part of the probe card 3 and a part of the prober (probe inspection device) 2 from among the components described in FIG. 1A. Here, the configuration of the probe card 3 is the same as in the cases of FIG. 4A and FIG. 4B described in the second embodiment. On the other hand, as for the prober 2, the configuration of the temperature adjustment mechanism (202, 203) is different from that in the case of FIG. 4A.

[0044] That is, in Fig. 4A, the temperature adjustment mechanisms (202, 203) are configured to adjust the entire stage surface layer 201 to a single set temperature. On the other hand, the temperature adjustment mechanisms (202, 203) in Fig. 7A have multiple adjustment regions obtained by dividing the area of ​​the wafer mounting surface, and are configured to be able to adjust the temperatures of the multiple adjustment regions individually.

[0045] Specifically, as shown in FIG. 7B, the temperature adjustment mechanism (202, 203) has multiple, in this example seven, adjustment regions AR[0]-AR[6], and each of the seven adjustment regions AR[0]-AR[6] has a divided temperature adjustment mechanism 50[0]-50[6]. The divided temperature adjustment mechanisms 50[0]-50[6] adjust the temperature of the adjustment regions AR[0]-AR[6] by heating or cooling. In the specification, the multiple adjustment regions AR[0]-AR[6] are collectively referred to as the adjustment region AR. Also, the multiple divided temperature adjustment mechanisms 50[0]-50[6] are collectively referred to as the divided temperature adjustment mechanism 50.

[0046] Here, in the case of one adjustment area AR, i.e., FIG. 4A, two main problems may occur. As the first problem, as shown in the temperature distribution RTD in FIG. 5, the temperature gradient may become large, and as a result, the accuracy of predicting the actual temperature of the device under test DUT may decrease. As the second problem, for example, the temperature of the entire stage surface layer 201 may be lowered in order to lower the actual temperature of the device under test DUT, and as a result, the temperature may be excessively lowered in the region of the semiconductor wafer WF other than the region of the device under test DUT. In this case, for example, when the device under test DUT is moved, the settling time required for the device under test DUT to reach the target temperature after the movement may increase.

[0047] Therefore, in the third embodiment, the temperature of the entire semiconductor wafer WF is equalized by using a divided temperature adjustment mechanism 50 as shown in Fig. 7B. Fig. 8 is a schematic diagram for explaining an example of a method for equalizing the temperature of the entire semiconductor wafer WF in Fig. 7A and Fig. 7B. Fig. 9 is a schematic diagram showing an example of the result of equalizing the temperature of the entire semiconductor wafer WF using the method shown in Fig. 8.

[0048] In Fig. 8, similarly to the case of Fig. 5, first, the four temperature sensors 45[1]-45[4] attached to the conversion board 31 obtain measured temperatures TMm[1]-TMm[4] based on the same temperature distribution RTD-1A as in Fig. 5. In this state, in Fig. 8, unlike the case of Fig. 5, independent manipulated variables MV[0]-MV[4] are added to each adjustment area AR.

[0049] As a result, as shown in Figures 8 and 9, when there are multiple (N) adjustment regions, a flattened temperature distribution RTD-NA is obtained compared to the temperature distribution RTD-1A when there is one adjustment region AR. By flattening the temperature distribution of the semiconductor wafer WF in this manner, the temperature gradient is reduced, and as a result, the actual temperature of the device under test DUT can be set to the target temperature TMt with high accuracy. Furthermore, when the device under test DUT is moved, the initial temperature of the device under test DUT after the movement can also be close to the target temperature TMt, so that the settling time after the movement can be shortened.

[0050] <Controller details> Fig. 10 is a block diagram showing an example of the configuration of the controller 21c in the prober 2 in Fig. 7A. Fig. 11 is a flowchart showing an example of the processing contents of the controller 21c shown in Fig. 10. Fig. 12 is a schematic diagram for explaining an example of the processing contents of the temperature calculation unit 213 in Fig. 10.

[0051] The controller 21c shown in Fig. 10 includes a temperature calculation unit 213 instead of the temperature prediction unit 212 shown in Fig. 6. The temperature calculation unit 213 is realized, for example, by software processing by a processor. The communication interface (IF) 210 acquires the temperatures TMm[1]-TMm[m] measured by all the temperature sensors 45. The controller 21c controls the divided temperature adjustment mechanisms 50[0]-50[6] using the temperature calculation unit 213 and the temperature controller 211 based on the measured temperatures TMm[1]-TMm[m] acquired via the communication interface (IF) 210.

[0052] Here, the details of the temperature calculation unit 213 will be described with reference to FIG. 12. FIG. 12 shows an example of the relative positional relationship between the probe card 3, specifically the conversion substrate 31, the stage surface layer 201, the semiconductor wafer WF, and the divided temperature adjustment mechanism 50. As shown in FIG. 12, the relative positional relationship between the semiconductor wafer WF and each of the adjustment areas AR[0]-AR[6] shown in FIG. 7B is always fixed. Therefore, if the temperature distribution of the entire semiconductor wafer WF is determined, the temperature of each of the adjustment areas AR[0]-AR[6] on the semiconductor wafer WF is also determined. Then, based on this, the operation amount of the divided temperature adjustment mechanisms 50[0]-50[6] can be individually controlled.

[0053] Meanwhile, the relative positional relationship between the probe card 3, and therefore the temperature sensor 45, and the semiconductor wafer WF changes depending on the position of the device under test DUT. Accordingly, depending on the position of the device under test DUT, there may be a temperature sensor 45a capable of measuring the temperature of the semiconductor wafer WF and a temperature sensor 45b unable to measure the temperature. For this reason, it is necessary to obtain the temperature distribution of the entire semiconductor wafer WF, and therefore the temperature of each of the adjustment areas AR[0]-AR[6], based on the measured temperature TMm acquired by the temperature sensor 45a capable of measuring the temperature, for each position of the device under test DUT.

[0054] 10, the temperature calculation unit 213 calculates the temperatures of each of the multiple adjustment areas AR[0]-AR[6] on the semiconductor wafer WF as calculated temperatures TMmC[0]-TMmC[6] based on the position information PDUT of the device under test DUT and the measured temperatures TMm[1]-TMm[m] by the multiple temperature sensors 45. As a result, for example, in the case of FIG. 12, the temperatures of the unmeasured adjustment areas AR[3] and AR[4] can also be obtained.

[0055] To perform such temperature calculation, the controller 21c holds temperature calculation data 214 in advance in the memory MEM. The temperature calculation data 214 is composed of, for example, mathematical formula data or conversion table data for obtaining calculated temperatures TMmC[0]-TMmC[6] for each of the adjustment areas AR[0]-AR[7] from the measured temperature TMm by the measurable temperature sensor 45a for each position of the device under test DUT. The temperature calculation data 214 can be created, for example, by performing an experiment in advance or a temperature simulation.

[0056] The temperature controller 211 individually controls the temperatures of the multiple adjustment regions AR[0]-AR[6] so that each of the calculated temperatures TMmC[0]-TMmC[6] for each of the multiple adjustment regions AR[0]-AR[6] from the temperature calculation unit 213 becomes the target temperature TMt. Specifically, the temperature controller 211 includes, for example, seven PI controllers or the like to generate manipulated variables MV[0]-MV[6] for each of the multiple split temperature adjustment mechanisms 50[0]-50[6] and individually control the multiple split temperature adjustment mechanisms 50[0]-50[6].

[0057] FIG 11 shows an outline of the process performed by the controller 21c. The process is realized, for example, by a processor executing a control program stored in a memory. In FIG 11, the controller 21c, more specifically, the communication interface (IF) 210, first acquires the temperature TMm measured by each temperature sensor 45 on the probe card 3 (step S101).

[0058] Next, the controller 21c, more specifically, the temperature calculation unit 213, calculates the temperature of each adjustment area AR as a calculated temperature TMmC based on the previously provided temperature calculation data 214 (step S102). Next, the controller 21c, more specifically, the temperature controller 211, compares the calculated temperature TMmC with the target temperature TMt (step S103). Here, if the calculated temperature TMmC matches the target temperature TMt (step S103: YES), the controller 21c proceeds to step S105, and if it does not match the target temperature TMt (step S103: NO), the controller 21c proceeds to step S105 via step S104.

[0059] In step S104, the temperature controller 211 adjusts the temperature of the adjustment area AR that does not match the target temperature TMt by using the divided temperature adjustment mechanism 50 of the area so that the temperature matches the target temperature TMt. Also, in step S105, the controller 21c returns to step S101 and executes the same process as above unless the probe test is completed. That is, the controller 21c repeatedly executes the processes of steps S101-S104 at a predetermined control period.

[0060] <Main Effects of the Third Embodiment> As described above, by using the method of the third embodiment, it is possible to obtain almost the same effects as those described in the second embodiment, and typically, the actual temperature of the device under test can be set with high accuracy. That is, in the method of the third embodiment, the actual temperature of the device under test can be set with high accuracy by flattening the temperature distribution of the semiconductor wafer. Furthermore, by flattening the temperature distribution of the semiconductor wafer, it is possible to shorten the temperature settling time required when the device under test is moved.

[0061] (Fourth embodiment) <Controller details> Fig. 13 is a block diagram showing a configuration example obtained by modifying the controller shown in Fig. 10 in the probe inspection system according to the fourth embodiment. Figs. 14A and 14B are flowcharts showing an example of the processing contents of the controller 21d shown in Fig. 13. The overall configuration of the probe inspection system according to the fourth embodiment is similar to that of Figs. 7A and 7B. The controller 21d shown in Fig. 13 further includes a preheating control unit 215 and preheating data 216 in addition to the configuration example shown in Fig. 10. The preheating control unit 215 is realized, for example, by software processing by a processor.

[0062] Here, for example, when the method of the third embodiment described above is used, at the time when the movement of the device under test DUT starts, the semiconductor wafer WF moves away from the probe card 3 due to the movement of the wafer stage 20 in the Z-axis direction. Therefore, the temperature sensor 45 cannot measure the temperature of the semiconductor wafer WF, and the control loop for controlling the divided temperature adjustment mechanism 50 is not formed normally.

[0063] Therefore, the preheating control unit 215 inputs the manipulated variables MV[0]-MV[6] for each of the multiple adjustment areas AR[0]-AR[6] from the temperature controller 211 during the probe inspection. Then, the preheating control unit 215 stores the input manipulated variables MV[0]-MV[6] in the memory MEM as preheating data 216 for each position of the device under test DUT, i.e., for each piece of position information PDUT. The preheating control unit 215 controls the temperature for each of the multiple adjustment areas AR[0]-AR[6] by outputting the manipulated variables MV[0]-MV[6] based on the preheating data 216 to the divided temperature adjustment mechanisms 50[0]-50[6] during the period from the start to the completion of the movement of the device under test DUT.

[0064] At this time, it is more preferable that the preheat control unit 215 individually controls the temperature of each of the multiple adjustment areas AR[0]-AR[6] in advance based on the preheat data 216 corresponding to the position of the device under test DUT after movement. That is, in chronological order, the preheat data 216 is created or updated, for example, when a probe test is performed on a certain semiconductor wafer WF. Then, the created or updated preheat data 216 is applied when a probe test is performed on the next semiconductor wafer WF.

[0065] Here, the manipulated variables MV[0]-MV[6] for the multiple divided temperature adjustment mechanisms 50[0]-50[6] are different values ​​for each, as shown in FIG. 8, and are values ​​that change according to the position of the device under test DUT. For this reason, it is desirable to control the divided temperature adjustment mechanisms 50[0]-50[6] in advance, before the movement is actually completed, based on the preheat data 216 corresponding to the position of the device under test DUT after the movement. This can further shorten the temperature settling time after the movement of the device under test DUT.

[0066] 14A and 14B show schematic processing contents by such controller 21d. The flowchart is realized, for example, by a processor executing a control program stored in a memory. In the flowchart shown in FIG. 14A and 14B, processing of steps S201-S207 is inserted between steps S103, S104 and step S105 in the flowchart shown in FIG.

[0067] In step S201, unless the controller 21d starts moving to the next device to be inspected DUT, the controller 21d repeatedly executes the processes of steps S101-S104, i.e., the processes by the communication interface (IF) 210, the temperature calculation unit 213, and the temperature controller 211. On the other hand, when the controller 21d starts moving to the next device to be inspected DUT (step S201: YES), the controller 21d, more specifically the preheating control unit 215, for example, links the operation amount MV generated in steps S103 and S104 to the position information PDUT of the device to be inspected DUT, and updates the preheating data 216 (step S202).

[0068] Next, the preheating control unit 215 performs temperature control of each adjustment area AR, i.e., preheating, by outputting the manipulated variable MV to the divided temperature adjustment mechanism 50 instead of the temperature controller 211 based on the preheating data 216 for the next device DUT to be inspected after the movement. Then, the preheating control unit 215 waits for the movement to the next device DUT to be inspected to be completed (step S204). Then, when the movement to the next device DUT to be inspected is completed (step S204: YES), the preheating control unit 215 ends the preheating and switches so that the manipulated variable MV is output from the temperature controller 211 to the divided temperature adjustment mechanism 50 (step S205).

[0069] Next, the controller 21d, more specifically, the communication interface (IF) 210 acquires the measured temperatures TMm by each temperature sensor 45 on the probe card 3 (step S206). As a result, the controller 21d may update the temperature calculation data 214 based on the acquired measured temperatures TMm (step S207). That is, in step S206, the movement of the device under test DUT allows the temperature of an unmeasured area, i.e., an area of ​​the semiconductor wafer WF that does not overlap with the probe card 3 in FIG. 12, to be measured. Using this measurement result, the temperature calculation data 214 can be updated or corrected to be more accurate.

[0070] <Main Effects of the Fourth Embodiment> As described above, by using the method of the fourth embodiment, it is possible to obtain almost the same effects as those described in the third embodiment, and typically, the actual temperature of the device under test can be set with high accuracy. Furthermore, by performing preheating, the temperature settling time after the device under test is moved can be further shortened compared to the method of the third embodiment.

[0071] (Fifth embodiment) <Configuration of Probe Inspection System (Embodiment)> Fig. 15A is a schematic diagram showing a configuration example of the main part of a probe inspection system according to the fifth embodiment. Fig. 15B is a schematic diagram showing an arrangement configuration example of a temperature sensor 25 in Fig. 15A. Fig. 15A shows a configuration example of a part of a probe card 3 and a part of a prober (probe inspection device) 2 from among the components described in Fig. 1A. In Fig. 15A, unlike the first to fourth embodiments, the probe card 3 does not include a temperature sensor 45 and is configured as usual.

[0072] 1A and 1B, the prober 2 is provided with a temperature sensor 25 that is different from the temperature sensor 205 embedded in the stage surface layer 201. The temperature sensor 25 has a temperature observation point exposed on the wafer mounting surface of the stage surface layer 201, and directly measures the temperature of the back surface of the semiconductor wafer WF mounted on the wafer mounting surface without passing through metal members or the like of the stage surface layer 201. This makes it possible to measure the actual temperature of the semiconductor wafer WF with high accuracy.

[0073] The temperature sensor 25 may be of a non-contact type or a contact type. However, as shown in FIG. 15A, it is preferable to use a contact type temperature sensor 25. The contact type temperature sensor 25 measures the temperature of the semiconductor wafer WF by contacting the back surface of the semiconductor wafer WF with a temperature observation point. By using a contact type, it becomes easier to expand the temperature measurement range or further improve the temperature measurement accuracy compared to the case of using a non-contact type. Examples of the contact type temperature sensor 25 include an RTD sensor that uses the resistance value of a resistance temperature detector such as platinum, a thermistor that uses the resistance-temperature characteristics of a semiconductor, and a thermocouple that uses the Seebeck effect.

[0074] In this example, a plurality of temperature sensors 25 are provided as shown in Fig. 15B. The temperature observation points of the plurality of temperature sensors 25 are disposed approximately uniformly distributed within the area of ​​the wafer mounting surface of the stage surface layer 201. Furthermore, in this example, the prober 2 shown in Fig. 15A includes a divided temperature adjustment mechanism 50 as shown in Fig. 7B.

[0075] When such a configuration example is used, unlike the first to fourth embodiments, it is not necessary to attach a temperature sensor 45 to the probe card 3 that may be required for each product, so that costs can be reduced. Furthermore, for example, a method similar to the third or fourth embodiment can be realized without performing the temperature calculation described in FIG. 12 or the like, or by performing a simple temperature calculation.

[0076] 12 and the like, the relative positional relationship between the multiple temperature sensors 25 and the semiconductor wafer WF, and therefore the multiple adjustment areas AR, is always fixed. Therefore, the temperature distribution of the semiconductor wafer WF can be directly obtained from the temperatures TMm measured by the multiple temperature sensors 25, and the temperature of each of the multiple adjustment areas AR can be obtained based on this.

[0077] More preferably, the temperature observation points of the multiple temperature sensors 25 are arranged to correspond to the multiple adjustment areas AR. That is, in addition to the multiple divided temperature adjustment mechanisms 50[0]-50[6], multiple temperature sensors 25[0]-25[6] are arranged in the multiple adjustment areas AR[0]-AR[6] in Fig. 7B. In this case, the temperature of each of the multiple adjustment areas AR can be obtained directly, making temperature control easier and preventing errors in temperature calculation.

[0078] <Controller details> Fig. 16 is a block diagram showing a configuration example of the controller 21e in the prober 2 in Fig. 15A. Here, it is assumed that the same method as the fourth embodiment is realized using the configuration example shown in Fig. 15A. Also, as described above, it is assumed that a plurality of temperature sensors 25 are arranged in each of the adjustment areas AR. Unlike the configuration example shown in Fig. 13, the controller 21e shown in Fig. 16 does not include the communication interface (IF) 210, the temperature calculation unit 213, and the temperature calculation data 214.

[0079] The temperature controller 211 inputs the measured temperatures TMm[0]-TMm[6] from the temperature sensors 25[0]-25[6]. Then, the temperature controller 211 controls the temperatures of the multiple adjustment areas AR[0]-AR[6] individually so that each of the input measured temperatures TMm[0]-TMm[6] becomes the target temperature TMt. Specifically, the temperature controller 211 generates the manipulated variables MV[0]-MV[6] for each of the multiple divided temperature adjustment mechanisms 50[0]-50[6] in the same manner as in FIG. 10, for example, and controls the multiple divided temperature adjustment mechanisms 50[0]-50[6] individually. In this way, the communication interface (IF) 210 is not required, so that the delay in acquiring the measured temperatures TMm, and therefore the delay in controlling the temperature, can be shortened.

[0080] 13, the control loop from the temperature sensors 25[0]-25[6] to the divided temperature adjustment mechanisms 50[0]-50[6] is always formed regardless of the movement of the device under test DUT. Therefore, it is not necessarily required. However, it is useful to provide the preheating control unit 215 from the viewpoint of preheating according to the position of the device under test DUT after movement.

[0081] Here, an example has been described in which a method similar to that of the third or fourth embodiment is realized using the configuration example shown in Fig. 15A. However, in some cases, a method similar to that of the second embodiment, that is, a method as shown in Fig. 5, can be realized using the configuration example shown in Fig. 15A. In this case, the controller 21 may predict the temperature of the device under test DUT based on the temperatures TMm measured by the multiple temperature sensors 25 and the position information PDUT of the device under test DUT.

[0082] <Main Effects of the Fifth Embodiment> As described above, by using the method of the fifth embodiment, it is possible to obtain almost the same effects as those described in the third or fourth embodiment, and typically, it is possible to set the actual temperature of the device to be tested with high accuracy. In addition, it is possible to reduce the cost of manufacturing the probe card, and furthermore, it is possible to facilitate temperature control.

[0083] (Sixth embodiment) <Problems and their solutions> Fig. 17 is a schematic diagram for explaining an example of a problem underlying the probe inspection system according to the sixth embodiment and a method for solving the problem. The amount of self-heating of the device under test DUT varies depending on the test item being performed. In addition, for example, when feedback control (FB control) of temperature is performed, it is difficult to quickly follow the temperature change caused by the difference in the amount of self-heating in a normal control band. For this reason, as shown in the upper part of Fig. 17, the actual temperature RTMa of the device under test DUT may vary considerably over time during the inspection period.

[0084] Therefore, in the sixth embodiment, a feedforward control (FF control) is performed by generating a manipulated variable MV that reflects the time-series change of the actual temperature RTMa in advance. As a result, the device under test DUT is set to the actual temperature RTMb where the temperature change is suppressed, as shown in the lower part of Fig. 17. The method of the sixth embodiment can be applied in combination with any of the methods of the first to fifth embodiments described above.

[0085] <Controller details> Fig. 18 is a block diagram showing a configuration example of a temperature controller 211 included in a controller in a prober in a probe inspection system according to a sixth embodiment. In this example, the temperature controller 211 shown in Fig. 18 includes a PID controller. The PID controller performs PID control using a proportional coefficient Kp, an integral coefficient Ki, and a differential coefficient Kd based on the error between the measured temperature TMm, the predicted temperature TMmP, or the calculated temperature TMmC, and the target temperature TMt, thereby outputting a manipulated variable MVx that brings the error closer to zero. Temperature changes can also be suppressed to some extent by the PID controller.

[0086] Here, the temperature controller 211 further holds temperature control data 220 in the memory MEM. The temperature control data 220 is data generated in advance based on a time-series temperature change during the probe test period of the device under test DUT, i.e., the actual temperature RTMa shown in FIG. 17, so as to offset the temperature change. During the probe test period, the temperature controller 211 controls the temperature adjustment mechanisms (202, 203) or the divided temperature adjustment mechanisms 50 in a feedforward manner based on the temperature control data 220. Specifically, the temperature controller 211 generates a final operation amount MV by adding a time-series correction operation amount dMV based on the temperature control data 220 to an operation amount MVx from a PID controller, for example.

[0087] Fig. 19 is a flow chart showing an example of the processing contents of a controller in a prober in a probe inspection system according to the sixth embodiment. Fig. 20 is a supplementary diagram explaining a part of the processing contents shown in Fig. 19. Here, the method of the third embodiment, that is, the case where the configuration example shown in Fig. 18 is applied to the temperature controller 211 shown in Fig. 10 will be explained as an example.

[0088] 19, the controller 21 first determines whether or not there is existing temperature control data 220 (step S301). If there is existing temperature control data 220 (step S301: YES), the controller 21 applies the existing temperature control data 220 and proceeds to step S303. In this case, in the subsequent processing, the temperature controller 211 executes FF control using the corrective manipulated variable dMV as shown in FIG. 18. On the other hand, if there is no existing temperature control data 220 (step S301: NO), the controller 21 proceeds directly to step S303.

[0089] In step S303, the controller 21 acquires the temperature TMm measured by each temperature sensor 45. Next, the controller 21 calculates the temperature for each adjustment area AR based on the acquired measured temperature TMm (step S304). Then, the controller 21 executes temperature control so that the calculated temperature TMmC becomes the target temperature TMt (step S305). Here, the controller 21 determines whether the temperature of the device under test DUT, for example, the temperature TMm measured by any of the temperature sensors 45, is outside a predetermined target temperature range (step S306).

[0090] If the temperature of the device DUT to be inspected is within the target temperature range (step S306: NO), the controller 21 returns to step S303 and repeats the same process. On the other hand, if the temperature of the device DUT to be inspected is outside the target temperature range (step S306: YES), the controller 21 acquires time-series data of the temperature of the device DUT to be inspected (step S307). Next, the controller 21 generates new temperature control data 220 or updates the existing temperature control data 220 so as to offset the temperature change included in the acquired time-series data (step S308).

[0091] Furthermore, the controller 21 may obtain a measurement value of a DC test item, such as a power supply current value, from the tester 1, and may further update the temperature control data 220 by reflecting the measurement value (step S309). That is, as shown in Fig. 20, a correlation may usually occur between the measurement value of a DC test item and the actual temperature RTMb. Therefore, the temperature control data 220 may be updated using the measurement value of the DC test item.

[0092] Thereafter, the controller 21 returns to step S301 and repeats the same process. At this time, the temperature control data 220 created or updated in steps S308 and 309 is applied to, for example, the next device to be inspected DUT as the existing temperature control data. Note that in steps S308 and 309, for example, the temperature control data 220 capable of suppressing the temperature change of the device to be inspected DUT may be generated by having an artificial intelligence (AI) learn the relationship between the temperature change of the device to be inspected DUT and the temperature control data 220 or the measurement value of the DC test item.

[0093] <Major Effects of the Sixth Embodiment> As described above, by using the method according to the sixth embodiment, the actual temperature of the device under test can be set with high accuracy. In particular, during the testing period of the device under test, the actual temperature of the device under test can be set with high accuracy while suppressing the change in the actual temperature according to the test items.

[0094] The invention made by the inventor has been specifically described above based on an embodiment, but it goes without saying that the present invention is not limited to the above embodiment and can be modified in various ways without departing from the gist of the invention. [Explanation of symbols]

[0095] 1 Tester 2. Prober (probe inspection device) 20 Wafer stage 202 Cooling layer (temperature adjustment mechanism) 203 Heater layer (temperature control mechanism) 21 Controller 216 Preheat Data 220 Temperature Control Data 25 Temperature Sensor 3 Probe Card 45 Temperature Sensor 50 division temperature adjustment mechanism AR adjustment area DUT Device under test MEM Memory MV manipulated variable PB Probe PDUT location information TMm Measured temperature TMmC calculated temperature TMmP predicted temperature TMt Target temperature WF Semiconductor wafer

Claims

1. a wafer stage for mounting a semiconductor wafer on a wafer mounting surface; a temperature sensor having a temperature observation point exposed on the wafer mounting surface, the temperature sensor directly measuring the temperature of the back surface of the semiconductor wafer mounted on the wafer mounting surface; a temperature adjustment mechanism that adjusts the temperature of the wafer stage by heating or cooling the wafer stage; a controller for controlling the temperature adjustment mechanism so that the temperature measured by the temperature sensor becomes a target temperature; Equipped with Probe inspection equipment.

2. 2. The probe inspection device according to claim 1, the temperature sensor is a contact type temperature sensor that measures the temperature of the semiconductor wafer by contacting the temperature observation point with the back surface of the semiconductor wafer; Probe inspection equipment.

3. 3. The probe inspection device according to claim 2, A plurality of the temperature sensors are provided, the temperature observation points of the plurality of temperature sensors are disposed so as to be substantially uniformly distributed within the area of ​​the wafer mounting surface, Probe inspection equipment.

4. 4. The probe inspection device according to claim 3, the temperature adjustment mechanism has a plurality of adjustment regions obtained by dividing the area of ​​the wafer mounting surface, and is configured to be able to adjust temperatures of the plurality of adjustment regions individually. Probe inspection equipment.

5. 5. The probe inspection device according to claim 4, the temperature observation points of the plurality of temperature sensors are arranged to correspond to the plurality of adjustment regions, respectively; Probe inspection equipment.

6. 5. The probe inspection device according to claim 4, The controller controls the temperatures of the plurality of adjustment regions individually so that the temperatures measured by the plurality of temperature sensors become the target temperatures. Probe inspection equipment.

7. 7. The probe inspection device according to claim 6, the controller stores in a memory an manipulated variable of the temperature for each of the plurality of adjustment regions as preheat data for each position of the device to be inspected formed on the semiconductor wafer, and individually controls the temperatures of the plurality of adjustment regions in advance during a period from the start to the completion of movement of the device to be inspected based on the preheat data corresponding to the position of the device to be inspected after the movement. Probe inspection equipment.

8. 2. The probe inspection device according to claim 1, The controller further stores temperature control data in a memory, and controls the temperature adjustment mechanism in a feedforward manner based on the temperature control data during a probe inspection period; the temperature control data is generated based on a time-series temperature change of the device to be inspected formed on the semiconductor wafer during the probe inspection period so as to offset the temperature change. Probe inspection equipment.

9. A probe inspection system having a probe card and a probe inspection device, The probe card comprises: a plurality of probes attached so as to come into contact with terminals of a device under test formed on a semiconductor wafer during a probe test; a non-contact temperature sensor that is attached so that a temperature observation point is located a predetermined distance from the surface of the semiconductor wafer during the probe inspection and that measures the temperature of the semiconductor wafer in a non-contact manner; Equipped with The probe inspection device includes: a wafer stage for mounting the semiconductor wafer on a wafer mounting surface; a temperature adjustment mechanism that adjusts the temperature of the wafer stage by heating or cooling the wafer stage; a controller that acquires a temperature measured by the temperature sensor attached to the probe card and controls the temperature adjustment mechanism based on the measured temperature; Equipped with Probe inspection system.

10. 10. The probe inspection system of claim 9, the temperature observation point of the temperature sensor is disposed above an inner area of ​​the device under test and at a location where the plurality of probes are not disposed; The controller controls the temperature adjustment mechanism so that the measured temperature becomes a target temperature. Probe inspection system.

11. 10. The probe inspection system of claim 9, A plurality of the temperature sensors are provided, the temperature observation points of the plurality of temperature sensors are disposed above an outer region of the device under test during the probe test, the controller predicts a temperature of the device under test as a predicted temperature based on the temperatures measured by the plurality of temperature sensors, and controls the temperature adjustment mechanism so that the predicted temperature becomes a target temperature. Probe inspection system.

12. 10. The probe inspection system of claim 9, A plurality of the temperature sensors are provided, the temperature observation points of the plurality of temperature sensors are disposed approximately uniformly distributed within the area of ​​the probe card, Probe inspection system.

13. 13. The probe inspection system of claim 12, the temperature adjustment mechanism has a plurality of adjustment regions obtained by dividing the area of ​​the wafer mounting surface, and is configured to be able to adjust temperatures of the plurality of adjustment regions individually. Probe inspection system.

14. 14. The probe inspection system of claim 13, the controller calculates a temperature for each of the plurality of adjustment regions on the semiconductor wafer based on a position of the device under test and the temperatures measured by the plurality of temperature sensors, and controls the temperatures of the plurality of adjustment regions individually so that the calculated temperatures for each of the plurality of adjustment regions become target temperatures. Probe inspection system.

15. 15. The probe inspection system of claim 14, the controller stores in a memory an manipulated variable of the temperature for each of the plurality of adjustment regions as preheating data for each position of the device under test, and controls the temperatures of the plurality of adjustment regions individually in advance during a period from when the movement of the device under test is started to when the movement is completed, based on the preheating data corresponding to the position of the device under test after the movement; Probe inspection system.

16. 10. The probe inspection system of claim 9, The controller further stores temperature control data in a memory, and controls the temperature adjustment mechanism in a feedforward manner based on the temperature control data during a probe test period of the device under test. the temperature control data is generated based on a time-series temperature change of the device under test during the probe test period so as to offset the temperature change; Probe inspection system.

17. A probe card used in a probe test of a device to be tested formed on a semiconductor wafer, a plurality of probes attached so as to come into contact with terminals of the device under test during the probe test; a non-contact temperature sensor that is attached so that a temperature observation point is located a predetermined distance from the surface of the semiconductor wafer during the probe inspection and that measures the temperature of the semiconductor wafer in a non-contact manner; Equipped with Probe card.

18. 20. The probe card of claim 17, the temperature observation point of the temperature sensor is disposed, during the probe inspection, above an inner area of ​​the device under test and at a location where the plurality of probes are not disposed. Probe card.

19. 20. The probe card of claim 17, A plurality of the temperature sensors are provided, the temperature observation points of the plurality of temperature sensors are disposed above an outer region of the device under test during the probe test; Probe card.

20. 20. The probe card of claim 17, A plurality of the temperature sensors are provided, the temperature observation points of the plurality of temperature sensors are disposed approximately uniformly distributed within the area of ​​the probe card, Probe card.

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