Light-emitting device

Abstract

To realize a light-emitting device having a mechanism for stopping an injection of light from a semiconductor laser element in accordance with a state of an optical member.SOLUTION: A light-emitting device comprises: an optical member having a semiconductor laser element that has a light emission surface of emitting light, a conductive part, and a light incident surface to which the light emitted from the light emission surface of the semiconductor laser element is incident; and a mounting member that has a mounting surface on which a first conductive region, an insulation region, and a second insulation region that is isolated from the first conductive region via the insulation region are provided. The semiconductor laser element is arranged to the first conductive region of the mounting surface. The optical member is arranged onto the mounting surface so that the conductive part is opposite to the mounting surface, and the conductive part is overlapped with the first and second regions in a plan view from a direction vertical to the mounting surface. The semiconductor laser element is electrically connected to the second conductive region via the conductive part.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a light-emitting device.

Background Art

[0002] Japanese Unexamined Patent Application Publication No. 2020-144363 discloses a light-emitting device including a semiconductor laser element, a wavelength conversion member having a wavelength conversion section and a reflection member, a base on which the semiconductor laser element is disposed and the wavelength conversion member is fixed, and a conductive film provided in the vicinity of the wavelength conversion section in the reflection member. This light-emitting device has a mechanism for detecting an abnormality from a change in the electrical connection state with respect to the conductive film, and the conductive film serves as an abnormality detection element for detecting an abnormality in the wavelength conversion section.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Disclosed is an invention that solves the problem of realizing a light-emitting device having a mechanism for stopping the emission of light from a semiconductor laser element according to the state of an optical member.

[0005] Alternatively, instead of the above problems, disclosed is an invention that solves the problem of realizing a small light-emitting device in which a semiconductor laser element and an optical member are arranged in the internal space of a package.

[0006] Alternatively, instead of each of the above problems, disclosed is an invention that solves the problem of realizing a mechanism for detecting an abnormality while reducing the number of components.

[0007] Note that in this specification, inventions that comprehensively solve a plurality of the above-described problems are also disclosed.

Means for Solving the Problems

[0008] The light-emitting device disclosed in the embodiment includes a semiconductor laser element having a light-emitting surface for emitting light, a conductive portion, and an optical member having a light-incident surface on which the light emitted from the light-emitting surface of the semiconductor laser element is incident, and a first conductive region, an insulating region, and a second conductive region insulated from the first conductive region via the insulating region, and a mounting member having a mounting surface provided with the first conductive region, the insulating region, and the second conductive region insulated from the first conductive region via the insulating region. The semiconductor laser element is disposed in the first conductive region of the mounting surface, and the optical member is disposed on the mounting surface such that the conductive portion and the mounting surface face each other and, in a plan view as viewed from a direction perpendicular to the mounting surface, the conductive portion overlaps the first conductive region and the second conductive region. The semiconductor laser element is electrically connected to the second conductive region via the conductive portion.

[0009] In at least one of the one or more inventions disclosed by the embodiment, a light-emitting device having a mechanism for stopping the emission of light from the semiconductor laser element according to the state of the optical member can be realized.

Brief Description of the Drawings

[0010]

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Best Mode for Carrying Out the Invention

[0011] In this specification or the claims, with respect to polygons such as triangles and quadrilaterals, those having been subjected to processing such as rounding, chamfering, corner rounding, and edge rounding at the corners of the polygon are also included in the term "polygon". Also, not limited to the corners (ends of the sides), those having been subjected to processing at the middle part of the sides are likewise included in the term "polygon". That is, those shapes having been subjected to partial processing while leaving the polygon as a base are included in the interpretation of "polygon" described in this specification and the claims.

[0012] Also, not limited to polygons, the same applies to terms representing specific shapes such as trapezoids, circles, and unevenness. The same also applies when dealing with each side forming the shape. That is, even if a side has been subjected to processing at the corner or the middle part, the processed part is included in the interpretation of "side". When distinguishing "polygon" or "side" without partial processing from the processed shape, "strict" is added, for example, described as "strict quadrilateral", etc.

[0013] Also, in this specification or the claims, descriptions such as up and down (upper / lower), left and right, front and back, front and rear (front / rear), near and far, etc. merely state relative positional, directional, and orientation relationships, and do not have to match the relationships during use.

[0014] Also, in the drawings, directions such as the X direction, Y direction, and Z direction may be indicated using arrows. The directions of these arrows are consistent among multiple drawings related to the same embodiment. Also, in the drawings, the direction of the arrow marked with X, Y, and Z is the positive direction, and the opposite direction is the negative direction. For example, the direction in which X is marked at the tip of the arrow is the X direction and is also the positive direction. In this specification, the direction that is the X direction and is also the positive direction is referred to as "the positive direction of X", and the opposite direction is referred to as "the negative direction of X". When referring to the "X direction", it includes both the positive and negative directions. The same applies to the Y direction and the Z direction.

[0015] Also, in this specification, when a certain object is specified as "one or more" and this object is described, the forms where this object is one and where this object is plural are collectively described. Therefore, the description specifying "one or more" supports any of the embodiments including one or more objects, the embodiments including at least one object, and the embodiments including a plurality of objects.

[0016] Also, in this specification, the description regarding the object of "one or each" is a collective description of the description of one object in an embodiment including one object, the description of one object in an embodiment including a plurality of objects, and the description of each of a plurality of objects in an embodiment including a plurality of objects. Therefore, the description regarding the object of "one or each" supports any of the following: in an embodiment including one object, this one object has the description content; in an embodiment including a plurality of objects, at least one of these objects has the description content; in an embodiment including a plurality of objects, each of these plurality of objects has the description content; and in an embodiment including one or more objects, all objects have the description content.

[0017] Also, in this specification, when explaining, for example, components, etc., it may be described as "member" or "part". "Member" shall refer to an object that is physically treated as a single entity. An object that is physically treated as a single entity can also be said to be an object that is treated as one part in the manufacturing process. On the other hand, "part" shall refer to an object that does not necessarily need to be physically treated as a single entity. For example, "part" is used when partially grasping a part of one member or when grasping a plurality of members as one object collectively.

[0018] Note that the distinction between "member" and "part" described above does not indicate an intention to consciously limit the scope of rights in the interpretation of the doctrine of equivalents. That is, even if there is a component described as "member" in the claims, the applicant does not recognize that it is essential for the application of the present invention to handle this component physically as a single entity solely based on this fact.

[0019] In addition, in this specification or the claims, when there are a plurality of certain components and they are to be expressed separately for distinction, "first", "second" may be appended to the heads of these components for distinction. Also, there may be cases where the objects to be distinguished are different between this specification and the claims. Therefore, even if a component with the same appendage as in this specification is described in the claims, the object specified by this component may not match between this specification and the claims.

[0020] For example, in this specification, there are components distinguished by appending "first", "second", "third", and when describing the components appended with "first" and "third" in this specification in the claims, for the sake of readability, in the claims, "first", "second" may be appended to distinguish the components. In this case, the components appended with "first", "second" in the claims respectively refer to the components appended with "first", "third" in this specification. Note that the application object of this rule is not limited to components, and it is also applied reasonably and flexibly to other objects.

[0021] Hereinafter, embodiments for carrying out the present invention will be described. Furthermore, specific embodiments for carrying out the present invention will be described with reference to the drawings. Note that the embodiments for carrying out the present invention are not limited to this specific embodiment. That is, the illustrated embodiment is not the only form in which the present invention is realized. Note that the sizes, positional relationships, etc. of the members shown in each drawing may be exaggerated for convenience of understanding.

[0022] <First Embodiment> The light-emitting device 1 according to the first embodiment will be described. FIGS. 1A to 12 are drawings for explaining an exemplary form of the light-emitting device 1. FIG. 1A is a perspective view of the light-emitting device 1. FIG. 1B is a perspective view of the light-emitting device 1 shown transparently. FIG. 2A is a top view of the light-emitting device 1 corresponding to FIG. 1B. FIG. 2B is a bottom view of the light-emitting device 1. FIG. 3 is a cross-sectional view of the light-emitting device 1 along the cross-section line III-III of FIG. 2A. FIG. 4 is a top view of the light-emitting device 1 with the lid 14 removed. FIG. 5 is a top view of the light-emitting device 1 with the lid 14 and the optical member 40 removed. FIG. 6 is a perspective view of the submount 30. FIG. 7 is a top view of the submount 30. In FIG. 7, the first conductive region 36A and the second conductive region 36B are each hatched. FIG. 8 is a bottom view of the submount 30. FIG. 9A is a cross-sectional view of the submount 30 along the cross-section line IX A-IX A of FIG. 7. FIG. 9B is a cross-sectional view of the submount 30 with the scale changed from FIG. 9A in consideration of visibility for explaining the structure of the submount 30. FIG. 10 is a perspective view of the optical member 40. In FIG. 10, the first region 43M and the second region 43N are each hatched. FIG. 11 is a bottom view of the optical member 40. In FIG. 11, the reflection part 42A and the conductive part 42B are each hatched. FIG. 12 is a cross-sectional view of the optical member 40 along the cross-section line XII-XII of FIG. 10.

[0023] The light-emitting device 1 includes a plurality of components. The plurality of components include a package 10, a semiconductor laser element 20, a submount 30, an optical member 40, a protection element 50, and a plurality of wirings 60.

[0024] Note that the light-emitting device 1 may further include other components. For example, the light-emitting device 1 may further include a semiconductor laser element separately from the semiconductor laser element 20. Also, the light-emitting device 1 may not include some of the plurality of components listed here.

[0025] First, each component will be described.

[0026] (Package 10) Package 10 includes a base body 11 and a lid body 14. The lid body 14 is joined to the base body 11 to form the package 10. In the package 10, an internal space is defined where other components are arranged. This internal space is a closed space surrounded by the base body 11 and the lid body 14. Also, this internal space can be a space sealed in a vacuum or airtight state.

[0027] In a top view, the outer edge shape of the package 10 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the short side direction of this rectangle is the same as the X direction, and the long side direction is the same as the Y direction. Note that in a top view, the outer edge shape of the package 10 does not have to be rectangular.

[0028] In the package 10, an internal space is formed where other components are arranged. The first top surface 11A of the package 10 is a part of the region that defines the internal space. Also, each inner surface 11E and the bottom surface 14B of the package 10 are parts of the region that defines the internal space.

[0029] The base body 11 has a first top surface 11A and a bottom surface 11B. The base body 11 has a second top surface 11C. The base body 11 has one or more outer surfaces 11D. The base body 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect the second top surface 11C. One or more outer surfaces 11D intersect the bottom surface 11B. One or more inner surfaces 11E intersect the second top surface 11C.

[0030] In a top view, the outer edge shape of the base body 11 is rectangular. In a top view, the outer edge shape of the base body 11 is the outer edge shape of the package 10. In a top view, the outer edge shape of the first top surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The long side direction of the first top surface 11A is parallel to the long side direction of the outer edge shape of the base body 11. Note that in a top view, the outer edge shape of the first top surface 11A does not have to be rectangular.

[0031] In a top view, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A in a top view. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is referred to as the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is referred to as the outer frame of the second upper surface 11C.

[0032] The base body 11 has a recess surrounded by a frame formed by the second upper surface 11C. The recess defines a portion that is recessed downward from the second upper surface 11C in the base body 11. The first upper surface 11A is part of the recess. One or more inner surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0033] The base body 11 has one or more stepped portions 11F. The stepped portion 11F has an upper surface 11G and a side surface 11H that intersects the upper surface 11G and extends downward from the upper surface 11G. Here, the surfaces of one stepped portion 11F are only one upper surface 11G and one side surface 11H. The upper surface 11G intersects the inner surface 11E. The side surface 11H intersects the first upper surface 11A.

[0034] One or each stepped portion 11F is provided inside the inner frame of the second upper surface 11C in a top view. One or each stepped portion 11F is formed along a part or all of the inner surface 11E in a top view. In the base body 11, the side surface 11H is an inner surface, but the side surface 11H and the inner surface 11E are different surfaces. One or each inner surface 11E and one or each side surface 11H are perpendicular to the first upper surface 11A. Here, the perpendicularity allows a difference of ±3 degrees.

[0035] One or more stepped portions 11F may include a first stepped portion 11F1 and a second stepped portion 11F2. The first stepped portion 11F1 and the second stepped portion 11F2 are provided at positions where their respective side surfaces 11H face each other. The first stepped portion 11F1 and the second stepped portion 11F2 are provided on the long side of the inner frame of the second upper surface 11C.

[0036] The base body 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be members made of different materials. The base body 11 may be configured to include a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0037] The base portion 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer surfaces 11D and one or more inner surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0038] The lower surface of the base portion 11M constitutes part or all of the lower surface 11B of the base body 11. When the lower surface of the base portion 11M constitutes part of the lower surface 11B of the base body 11, the lower surface of the frame portion 11N constitutes the remaining region of the lower surface 11B of the base body.

[0039] The base body 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more first wiring portions 12A1 arranged in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0040] One or each of the first wiring portions 12A1 is provided on the upper surface 11G of the stepped portion 11F. The base body 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the first stepped portion 11F1. The base body 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the second stepped portion 11F2.

[0041] One or each of the second wiring portions 12A2 is provided on the lower surface 11B of the package 10. One or each of the second wiring portions 12A2 is provided on the lower surface of the frame portion 11N. Note that the second wiring portion 12A2 may be provided on an outer surface different from the lower surface 11B of the package 10.

[0042] When viewed from above, the base body 11 has one or a plurality of second wiring portions 12A2 provided on the lower surface 11B of the base body 11 in a region that includes the upper surface 11G of the first stepped portion 11F1 when the base body 11 is divided into two regions by a virtual line passing through the side surface 11H of the first stepped portion 11F1 and parallel to this side surface 11H.

[0043] When viewed from above, the base body 11 has one or a plurality of second wiring portions 12A2 provided on the lower surface 11B of the base body 11 in a region that includes the upper surface 11G of the second stepped portion 11F2 when the base body 11 is divided into two regions by a virtual line passing through the side surface 11H of the second stepped portion 11F2 and parallel to this side surface 11H.

[0044] In the base body 11, one or each first wiring portion 12A1 is electrically connected to the second wiring portion 12A2. One or a plurality of first wiring portions 12A1 are electrically connected to different second wiring portions 12A2.

[0045] The base body 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the second upper surface 11C. The bonding pattern 13A is provided in an annular shape. The bonding pattern 13A is provided in a rectangular annular shape. When viewed from above, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0046] The base body 11 can be formed, for example, using ceramic as the main material. Examples of the ceramic that is the main material of the base body 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0047] Here, the main material refers to the material that occupies the largest proportion of the mass or volume in the object to be formed. In the case where the object to be formed is formed from one material, that material is the main material. That is, for a material to be the main material includes the fact that the proportion occupied by that material can be 100%.

[0048] The base body 11 may be formed using a base member and a frame member formed using different main materials. The base member can be formed, for example, using a material with excellent heat dissipation properties such as metal or a composite containing metal, graphite, diamond, etc. as the main material. Examples of the metal serving as the main material of the base member include copper, aluminum, or iron. Examples of the composite containing the metal serving as the main material of the base member include copper molybdenum or copper tungsten. The frame member can be formed, for example, using the ceramic mentioned as the main material of the above-described base body 11 as the main material.

[0049] The wiring portion 12A can be formed, for example, using a metal material as the main material. Examples of the metal material serving as the main material of the wiring portion 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, etc. or alloys containing these metals. The wiring portion 12A can be composed of, for example, one or a plurality of metal layers.

[0050] The bonding pattern 13A can be formed, for example, using a metal material as the main material. Examples of the metal material serving as the main material of the bonding pattern 13A include single metals such as Cu, Ag, Ni, Au, Sn, Ti, Pd, etc. or alloys containing these metals. The bonding pattern 13A can be composed of, for example, one or a plurality of metal layers.

[0051] The lid body 14 has an upper surface 14A and a lower surface 14B. Also, the lid body 14 has one or a plurality of side surfaces 14C. The lid body 14 is configured in the shape of a rectangular parallelepiped flat plate. Note that the shape of the lid body 14 does not have to be a rectangular parallelepiped.

[0052] The lid body 14 is joined to the base body 11. The lower surface 14B of the lid body 14 is joined to the second upper surface 11C of the base body 11. The lid body 14 is joined to the bonding pattern 13A of the base body 11. The lid body 14 is joined to the base body 11 via an adhesive.

[0053] The lid 14 has light transmissibility that allows light to pass through. Here, the light transmissibility means that the transmittance is 80% or more with respect to the light incident on the lid 14. Note that the lid 14 may have a non-translucent region (a region without light transmissibility) in part.

[0054] The lid 14 can be formed, for example, using glass as the main material. The lid 14 can also be formed, for example, using sapphire as the main material.

[0055] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having a long side and a short side. The outer shape of the semiconductor laser element 20 in a top view is a rectangle having a long side and a short side. Note that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 in a top view are not limited to this.

[0056] The semiconductor laser element 20 has a light emitting surface 22 that emits light. For example, a side surface 21C can be the light emitting surface 22. The side surface 21C that becomes the light emitting surface 22 intersects the short side of the upper surface 21A. Also for example, the upper surface 21A can be the light emitting surface 22.

[0057] A single emitter semiconductor laser element in which the semiconductor laser element 20 is composed of one emitter can be employed. Also, a multi-emitter semiconductor laser element in which the semiconductor laser element 20 is composed of a plurality of emitters can be employed.

[0058] The light emitted from the light emitting surface 22 of the semiconductor laser element 20 is Class 4 light in the JIS standard "JIS C 6802:2018". Note that since the JIS standard "JIS C 6802:2018" is created based on the IEC standard "IEC 60825-1:2014" and Interpretation Sheet 1 and Interpretation Sheet 2 issued in 2017 for this, the class in this JIS standard can also be said to be the class based on this IEC standard.

[0059] The semiconductor laser element 20 emits light with a light emission peak wavelength in the range of 320 nm to 530 nm. Alternatively, the semiconductor laser element 20 emits light with a light emission peak wavelength in the range of 430 nm to 480 nm. As the semiconductor laser element 20 that emits light with such a light emission peak wavelength, a semiconductor laser element including a nitride semiconductor can be mentioned. As the nitride semiconductor, for example, GaN-based semiconductors such as GaN, InGaN, and AlGaN can be adopted. Note that the light emitted from the semiconductor laser element 20 does not have to be limited to the above wavelength range.

[0060] The semiconductor laser element 20 emits a directional laser beam. Divergent light having divergence is emitted from the light emission surface 22 (emission end face) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emission surface 22. The FFP is the shape and light intensity distribution of the emitted light at a position away from the light emission surface of the semiconductor laser element.

[0061] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. Also, in the light intensity distribution of the FFP, the light having an intensity of 1 / e 2 or more of the peak intensity value is called the light of the main part.

[0062] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an elliptical shape in which the stacking direction is longer than the direction perpendicular to the stacking direction on a plane parallel to the light emission surface 22. The stacking direction is the direction in which a plurality of semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. Also, the major axis direction of the elliptical shape of the FFP can be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0063] Based on the light intensity distribution of the FFP, the angle at which the light with an intensity of 1 / e of the peak light intensity spreads is defined as the light divergence angle of the semiconductor laser element 20. Here, the light divergence angle is indicated by the angle formed by the light with the peak light intensity (the light passing through the optical axis) and the light with an intensity of 1 / e of the peak light intensity. Note that the light divergence angle may be obtained, for example, from the light intensity at half the peak light intensity in addition to the light intensity of 1 / e of the peak light intensity. In the description of this specification, when simply referring to the "light divergence angle", it refers to the light divergence angle at the light intensity of 1 / e of the peak light intensity. 2 The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be 7.5 degrees or more and less than 45 degrees. Also, the divergence angle of this light in the slow axis direction can be more than 0 degrees and 5 degrees or less. Also, for this light, the divergence angle in the fast axis direction is larger than the divergence angle in the slow axis direction. 2 2 2

[0064]

[0065] (Submount 30) The submount 30 has a first upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The first upper surface 31A can be said to be a mounting surface on which other components are mounted. The shape of the first upper surface 31A is rectangular. This rectangle of the first upper surface 31A can have a short side and a long side. Note that the shape of the first upper surface 31A does not have to be rectangular.

[0066] In addition to the first upper surface 31A, the submount 30 has a second upper surface 31D. The second upper surface 31D can be said to be a mounting surface on which other components are mounted. Components different from the components mounted on the first upper surface 31A are mounted on the second upper surface 31D. Thus, the submount 30 can be said to be a mounting member on which other components are mounted.

[0067] The second upper surface 31D is above the first upper surface 31A. The second upper surface 31D is above the first upper surface 31A in the range of 15 μm or more and 100 μm or less. Note that the first upper surface 31A and the second upper surface 31D may be in the same plane, that is, composed of one plane. ​​​​

[0068] In a top view, the outer shape of the submount 30 is rectangular. This rectangle of the submount 30 may have a short side and a long side. Note that the outer shape of the submount 30 in a top view does not have to be rectangular. In a top view, the submount 30 may have an outer shape in which the length in one direction (hereinafter, this direction is referred to as the short side direction of the submount 30) is smaller than the length in a direction perpendicular thereto (hereinafter, this direction is referred to as the long side direction of the submount 30). In the illustrated submount 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0069] The submount 30 may be configured to include a substrate 32A and an upper metal member 32B. Further, the submount 30 may be further configured to include a lower metal member 32C. The upper metal member 32B is provided on the upper surface side of the substrate 32A. The lower metal member 32C is provided on the lower surface side of the substrate 32A. The submount 30 further includes a wiring layer 33. The wiring layer 33 is provided on the upper metal member 32B.

[0070] The submount 30 includes a first conductive layer 34A and a second conductive layer 34B. The first conductive layer 34A and the second conductive layer 34B are provided on the upper surface side of the submount 30. The first conductive layer 34A and the second conductive layer 34B are provided on the substrate 32A. In the submount 30, the first conductive layer 34A and the second conductive layer 34B are separated from each other and are not electrically connected.

[0071] In a top view, the first upper surface 31A overlaps with the first conductive layer 34A. In a top view, the first upper surface 31A overlaps with the second conductive layer 34B. In a top view, the second upper surface 31D overlaps with the upper metal member 32B. In a top view, the second upper surface 31D does not overlap with the second conductive layer 34B.

[0072] In the submount 30, the upper metal member 32B is electrically connected to the first conductive layer 34A. The first conductive layer 34A is provided in connection with the upper metal member 32B. For example, after the upper metal member 32B is provided on the substrate 32A, the first conductive layer 34A is provided. Also, for example, the first conductive layer 34A may be provided on the substrate 32A, and the upper metal member 32B may be provided on the first conductive layer 34A. In the submount 30, the upper metal member 32B is separated from the second conductive layer 34B and is not electrically connected to the second conductive layer 34B.

[0073] In a top view, the first conductive layer 34A is arranged in a region extending in one direction from the upper metal member 32B, and they are connected. This direction shall be referred to as the connection direction. The longitudinal direction of the submount 30 can be this connection direction. In the illustrated submount 30, the positive direction of Y can be said to be this connection direction.

[0074] In a top view, the second conductive layer 34B is separated from the first conductive layer 34A in a direction perpendicular to the connection direction. The direction perpendicular to the connection direction shall be referred to as the separation direction. In a top view, the second conductive layer 34B is separated from the upper metal member 32B in the separation direction. In a top view, the second conductive layer 34B is provided so as to pass through a point on the first conductive layer 34A and a virtual straight line parallel to the separation direction, and a virtual straight line passing through a point on the upper metal member 32B and parallel to the separation direction. In a top view, the width of the second conductive layer 34B in the connection direction is larger than the width of the upper metal member 32B in the connection direction.

[0075] The width of the upper metal member 32B in the separation direction is 50% or more of the width of the submount 30 in the separation direction. This makes it easier to arrange other components on the upper metal member 32B. The width of the upper metal member 32B in the separation direction can be 50% or more and 90% or less of the width of the submount 30 in the separation direction.

[0076] The width of the upper metal member 32B in the separation direction is smaller than the width of the first conductive layer 34A in the separation direction. The width of the upper metal member 32B in the separation direction is 70% or more of the width of the first conductive layer 34A in the separation direction. Preferably, the width of the upper metal member 32B in the separation direction is 85% or more and 98% or less of the width of the first conductive layer 34A in the separation direction. From the viewpoint of the heat dissipation performance of the upper metal member 32B, it is preferable to approach the width of the first conductive layer 34A as much as possible while ensuring separation from the second conductive layer 34B in the separation direction.

[0077] In a top view, the width of the second conductive layer 34B in the separation direction is smaller than the width of the first conductive layer 34A in the separation direction. In a top view, the width of the second conductive layer 34B in the separation direction is smaller than the width of the upper metal member 32B in the separation direction. Thereby, the width of the submount 30 in the separation direction can be suppressed.

[0078] In a top view, the outer shape of the upper metal member 32B is a rectangle having a long side and a short side. In a top view, the outer shape of the second conductive layer 34B is a rectangle having a long side and a short side. The long side direction in the outer shape of the upper metal member 32B and the long side direction in the outer shape of the second conductive layer 34B are the same direction. Here, the same includes a difference of ±2 degrees. In the illustrated submount 30, the long side direction of the upper metal member 32B is the same direction as the longitudinal direction of the submount 30.

[0079] In a top view, with respect to the longitudinal direction of the submount 30, the width of the submount 30 is less than twice the width of the upper metal member 32B. The former width is 1.2 times or more of the latter width.

[0080] The submount 30 has a first bonding layer 35A and a second bonding layer 35B. The first bonding layer 35A is provided in a partial region of the first conductive layer 34A in a top view. The second bonding layer 35B is provided in a partial region of the second conductive layer 34B in a top view.

[0081] When the submount 30 is virtually divided into two regions by a virtual straight line parallel to the separation direction passing through a point on the line where the first conductive layer 34A and the upper metal member 32B are connected in a top view, both the first bonding layer 35A and the second bonding layer 35B are provided in one region and not in the other region. In other words, the first bonding layer 35A and the second bonding layer 35B are provided only in the same one of the two regions.

[0082] In a top view, in a region defined on the submount 30, the first bonding layer 35A and the second bonding layer 35B are included within a rectangular region that does not include the upper metal member 32B. The outer shapes of both the first bonding layer 35A and the second bonding layer 35B are rectangular in a top view.

[0083] In the submount 30, the first bonding layer 35A is electrically connected to the first conductive layer 34A, and the second bonding layer 35B is electrically connected to the second conductive layer 34B. In the submount 30, the first bonding layer 35A is not electrically connected to the second bonding layer 35B and the second conductive layer 34B. In the submount 30, the second bonding layer 35B is not electrically connected to the first bonding layer 35A and the first conductive layer 34A.

[0084] In a top view, when comparing the ratios of the widths in the direction parallel to the long side to the widths in the direction parallel to the short side of the first bonding layer 35A, the second conductive layer 34B, and the upper metal member 32B with respect to the long side direction and the short side direction of the outer shape of the second conductive layer 34B, the first bonding layer 35A has the smallest ratio, and the second conductive layer 34B has the largest ratio.

[0085] The thickness (width in the vertical direction) of the first conductive layer 34A is smaller than the thickness of the upper metal member 32B. The thickness of the second conductive layer 34B is smaller than the thickness of the upper metal member 32B. The sum of the thickness of the first conductive layer 34A and the thickness of the first bonding layer 35A is smaller than the thickness of the upper metal member 32B. The sum of the thickness of the second conductive layer 34B and the thickness of the second bonding layer 35B is smaller than the thickness of the upper metal member 32B.

[0086] The thickness of the upper metal member 32B is 10 μm or more greater than the thickness of the first conductive layer 34A. The thickness of the upper metal member 32B is in the range of 15 μm or more and 100 μm or less, and is greater than the thickness of the first conductive layer 34A. The thickness of the first conductive layer 34A and the thickness of the second conductive layer 34B are the same. Here, the same includes a difference of ±3 μm.

[0087] On the upper surface side of the submount 30, a first conductive region 36A, a second conductive region 36B, and an insulating region 36C are provided. The first conductive region 36A, the second conductive region 36B, and the insulating region 36C are provided on the mounting surface including the first upper surface 31A and the second upper surface 31D.

[0088] The second conductive region 36B is insulated from the first conductive region 36A via the insulating region 36C. That is, in the submount 30, the first conductive region 36A and the second conductive region 36B are not electrically connected. When the first conductive region 36A or the second conductive region 36B is provided on a member having insulating properties like the substrate 32A, the insulating region 36C does not include a region overlapping the first conductive region 36A in a top view, and does not include a region overlapping the second conductive region 36B in a top view.

[0089] The first conductive region 36A has a first region having the first upper surface 31A and a second region having the second upper surface 31D. The second conductive region 36B has the first upper surface 31A but does not have the second upper surface 31D. The insulating region 36C has a region separating the first conductive region 36A and the second conductive region 36B in a top view.

[0090] In a top view, the area of the first conductive region 36A is larger than that of the second conductive region 36B. The first conductive region 36A includes the first conductive layer 34A and the upper metal member 32B. The second conductive region 36B includes the second conductive layer 34B.

[0091] The shape of the insulating region 36C is such that the width in the connection direction is longer than the width in the separation direction in a top view. The insulating region 36C has a rectangular shape in a top view. Regarding the separation direction, the width of the second conductive region 36B is larger than the width of the insulating region 36C. Regarding the separation direction, the ratio of the sum of the width of the second conductive region 36B and the width of the insulating region 36C to the width of the submount 30 is less than 50%. Alternatively, this ratio can be 40% or less.

[0092] In a top view, the submount 30 can be divided into two regions by a virtual straight line extending in the connection direction such that the first conductive region 36A is included in one region and the second conductive region 36B is included in the other region. That is, the first conductive region 36A and the second conductive region 36B are provided such that they can be separated by one virtual straight line extending in the connection direction.

[0093] The first conductive region 36A does not have a plurality of conductive regions separated by insulating regions within the region in a top view. That is, the number of conductive regions that the first conductive region 36A has is one. The second conductive region 36B does not have a plurality of conductive regions separated by insulating regions within the region in a top view. That is, the number of conductive regions that the second conductive region 36B has is one.

[0094] The substrate 32A has insulation properties. The substrate 32A is formed of, for example, silicon nitride, aluminum nitride, or silicon carbide. It is advisable to select a ceramic with relatively good heat dissipation (high thermal conductivity) as the main material of the substrate 32A.

[0095] Metals such as copper and aluminum are used as the main material of the upper metal member 32B. The upper metal member 32B has one or a plurality of metal layers. The upper metal member 32B can have a plurality of metal layers with different metals as the main material.

[0096] For the main material of the lower metal member 32C, metals such as copper and aluminum are used. The lower metal member 32C has one or more metal layers. The lower metal member 32C may have a plurality of metal layers with different metals as the main materials.

[0097] The wiring layer 33 can be formed using a metal material as the main material. For example, the wiring layer 33 can be formed using an AuSn solder (a metal layer of AuSn).

[0098] The first conductive layer 34A and the second conductive layer 34B can be formed using a metal material as the main material. Examples of the metal materials that are the main materials of the first conductive layer 34A and the second conductive layer 34B include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, etc., or alloys containing these metals. The first conductive layer 34A and the second conductive layer 34B can be composed of, for example, one or more metal layers.

[0099] The first bonding layer 35A and the second bonding layer 35B can be formed using a metal material as the main material. For example, the first bonding layer 35A and the second bonding layer 35B can be formed using AuSn solder.

[0100] The insulating region 36C is, for example, in a top view, a portion where the substrate 32A is exposed from the first conductive layer 34A, the second conductive layer 34B, and the upper metal member 32B. Instead of exposing the substrate 32A, an insulating layer may be further provided on the exposed portion.

[0101] For example, the length of the submount 30 in the short side direction or the short hand direction is 600 μm or more and 1400 μm or less. Also, the length of the submount 30 in the long side direction or the long hand direction is 1500 μm or more and 5000 μm or less. Further, the difference between the length in the long hand direction and the length in the short hand direction of the submount 30 is 100 μm or more and 4400 μm or less.

[0102] For example, the thickness of the submount 30 (the width in the direction perpendicular to the first upper surface 31A) is 130 μm or more and 600 μm or less. Also for example, the thickness of the substrate 32A is 100 μm or more and 400 μm or less. Also for example, the thickness of the upper metal member 32B is 15 μm or more and 100 μm or less. Also for example, the thickness of the lower metal member 32C is 15 μm or more and 100 μm or less. Also for example, the thickness of the wiring layer 33 is 0.3 μm or more and 5 μm or less.

[0103] (Optical member) The optical member 40 has an upper surface 41A, a lower surface 41B, and one or more side surfaces 41C. The shape of the upper surface 41A is rectangular. The shape of the lower surface 41B is rectangular.

[0104] The optical member 40 has a light incident surface 41D and a light exit surface 41E. Among the one or more side surfaces 41C, a side surface 41C serving as the light incident surface 41D is included. Among the one or more side surfaces 41C or the upper surface 41A, a surface serving as the light exit surface 41E is included. In the illustrated optical member 40, the upper surface 41A includes the light exit surface 41E.

[0105] The optical member 40 emits the light incident on the light incident surface 41D from the light exit surface 41E. At this time, the light emitted from the light exit surface 41E is the light to which an optical action has been applied with respect to the light incident on the light incident surface 41D. The optical action provided by the optical member 40 is an optical action that enhances the safety for the human body. The optical member 40, for example, applies an optical action of diffusing light to the laser light incident on the light incident surface 41D and emits light from the light exit surface 41E. Examples of members that provide such an optical action include a diffusion plate, a phosphor plate, and the like. The illustrated optical member 40 has a wavelength conversion member 43 containing a phosphor.

[0106] The optical member 40 has a wavelength conversion member 43 and a reflection member 44. The surface of the optical member 40 includes the surface of the wavelength conversion member 43 and the surface of the reflection member 44. In the optical member 40, a part of the wavelength conversion member 43 is exposed from the reflection member 44, and the other part is covered by the reflection member 44. The part of the wavelength conversion member 43 exposed from the reflection member 44 can be the light incident surface 41D and the light exit surface 41E.

[0107] The optical member 40 has a metal member 42. The metal member 42 has a reflection part 42A provided on the wavelength conversion member 43 and a conductive part 42B provided on the reflection member 44.

[0108] The wavelength conversion member 43 has an upper surface 43A, a lower surface 43B, and a plurality of side surfaces 43C. In the optical member 40, the upper surface 43A is exposed from the reflection member 44. The plurality of side surfaces 43C include side surfaces 43C exposed from the reflection member 44 and side surfaces 43C not exposed from the reflection member 44. The side surface 43C exposed from the reflection member 44 becomes the light incident surface 41D of the optical member 40, and the upper surface 43A becomes the light exit surface 41E of the optical member 40.

[0109] In the wavelength conversion member 43, all the side surfaces 43C except the side surface 43C that becomes the light incident surface 41D are covered by the reflection member 44. The light emitted from all the side surfaces 43C except the light incident surface 41D is reflected by the reflection member 44. Thereby, light can be efficiently emitted from the light exit surface 41E of the optical member 40.

[0110] The reflection member 44 has an upper surface 44A, a lower surface 44B, one or more outer side surfaces 44C, and one or more inner side surfaces 44D. The one or more inner side surfaces 44D are in contact with one or more side surfaces 43C of the wavelength conversion member 43.

[0111] The upper surface 41A of the optical member 40 is configured to include the upper surface 43A of the wavelength conversion member 43 and the upper surface 44A of the reflection member 44 that surrounds the upper surface 43A in a top view. That is, the upper surface 41A of the optical member 40 is composed of the upper surfaces of two or more members. The upper surfaces of these members are provided flush with each other. Here, being flush with each other includes a height difference within ±5 μm. Note that the upper surfaces of these members do not necessarily have to be flush with each other.

[0112] The lower surface 41B of the optical member 40 is configured to include the lower surface 43B of the wavelength conversion member 43 and the lower surface 44B of the reflection member 44. That is, the lower surface 41B of the optical member 40 is composed of the lower surfaces of two or more members. The lower surfaces of these members are provided flush with each other. Here, being flush with each other includes a height difference within ±5 μm.

[0113] The plurality of side surfaces 41C of the optical member 40 are configured to include the side surface 43C that becomes the light incident surface 41D of the wavelength conversion member 43 and one or more outer side surfaces 44C of the reflection member 44. Also, the plurality of side surfaces 41C of the optical member 40 include side surfaces 41C configured to include the side surface 43C that becomes the light incident surface 41D of the wavelength conversion member 43 and the outer side surface 44C of the reflection member 44. That is, the plurality of side surfaces 41C of the optical member 40 include side surfaces 41C composed of the side surfaces of two or more members.

[0114] Here, the direction from the side surface 41C where the light incident surface 41D of the optical member 40 is provided to the opposite side surface 41C is referred to as the incident direction. The upper surface 43A of the wavelength conversion member 43 has a first region 43M in a plan view perpendicular to the upper surface 43A, where the width in the direction perpendicular to the incident direction becomes wider toward the incident direction. The upper surface 43A of the wavelength conversion member 43 has a second region 43N in a plan view perpendicular to the upper surface 43A, which is a region extending further in the incident direction from the first region 43M, where the width in the direction perpendicular to the incident direction becomes narrower toward the incident direction. In the illustrated optical member 40, the incident direction is the same as the positive direction of Y, and the direction perpendicular to the incident direction is the same as the X direction.

[0115] The upper surface 43A of the wavelength conversion member 43 has a rectangular shape. One of the two diagonals of this rectangle is parallel to the incident direction. Also, the other diagonal forms the boundary between the first region 43M and the second region 43N. Here, the parallelism includes a difference of ±2 degrees.

[0116] The shape of the light incident surface 41D of the wavelength conversion member 43 is such that the maximum width in the vertical direction is larger than the maximum width in the direction perpendicular to the incident direction in a top view. Regarding the direction perpendicular to the incident direction in a top view, the maximum width of the light incident surface 41D is larger than the minimum width of the light emission surface 41E of the wavelength conversion member 43 and smaller than the maximum width.

[0117] The area of the lower surface 43B of the wavelength conversion member 43 is smaller than the area of the upper surface 43A of the wavelength conversion member 43. In a plan view perpendicular to the upper surface 43A of the wavelength conversion member 43, the first region 43M has a region overlapping the lower surface 43B and a region not overlapping the lower surface 43B but overlapping the light incident surface 41D.

[0118] The shape of the upper surface 44A of the reflection member 44 is a rectangle having sides parallel to the incident direction. Note that if the light emission surface 41E is surrounded in a top view, the shape of the upper surface 44A may be a shape other than a rectangle, such as a circle.

[0119] The metal member 42 is provided on the lower surface 41B of the optical member 40. The metal member 42 is provided on the side opposite to the light emission surface 41E. The metal member 42 provided on the lower surface 43B of the wavelength conversion member 43 becomes a reflection portion 42A that reflects light. It can be said that the optical member 40 has the reflection portion 42A. The metal member 42 provided on the lower surface 44B of the reflection member 44 becomes a conductive portion 42B that constitutes a part of the current path. It can be said that the optical member 40 has the conductive portion 42B.

[0120] The reflection portion 42A and the conductive portion 42B are connected. It is easier to form the metal member 42 by making it a single metal member 42 in which the reflection portion 42A and the conductive portion 42B are connected.

[0121] Note that instead of forming the reflection part 42A as a part of the metal member 42, the reflection part 42A may be formed separately. In this case, the material for forming the reflection part 42A does not have to be limited to metal.

[0122] The metal member 42 is formed with a thickness of 5 μm or less. The smaller the thickness of the metal member 42, the lower the position where the wavelength conversion member 43 is arranged with respect to the semiconductor laser element 20, leading to miniaturization of the light emitting device 1.

[0123] The reflection part 42A is formed with a thickness of 1 μm or more. Thereby, the reflection part 42A can exhibit sufficient reflection performance. The conductive part 42B is formed with a thickness of 0.3 μm or more. Thereby, the stability as a current path is ensured. Therefore, it can be said that the metal member 42 in which the reflection part 42A and the conductive part 42B are connected preferably has a thickness of 1 μm or more.

[0124] The reflection part 42A reflects 90% or more of the light incident on the reflection part 42A. The reflection part 42A is preferably provided on the entire lower surface 43B of the wavelength conversion member 43. The conductive part 42B is provided on a part or all of the lower surface 44B of the reflection member 44.

[0125] The wavelength conversion member 43 contains a phosphor. Examples of the phosphor include yttrium aluminum garnet (YAG) activated with cerium, lutetium aluminum garnet (LAG) activated with cerium, silicate ((Sr,Ba) 2 SiO 4 ) activated with europium, α-sialon phosphor, β-sialon phosphor, etc. Among them, the YAG phosphor has good heat resistance.

[0126] The wavelength conversion member 43 is preferably formed using an inorganic material that is difficult to decompose by light irradiation as the main material. The main material of the wavelength conversion member 43 is, for example, ceramic. Note that the main material does not have to be limited to ceramic. Also, the wavelength conversion member 43 may be formed of a single crystal of a phosphor. Examples of the ceramic include aluminum oxide, aluminum nitride, silicon oxide, yttrium oxide, zirconium oxide, or magnesium oxide. The wavelength conversion member 43 is, for example, a sintered body formed using ceramic as the main material. The wavelength conversion member 43 can be formed, for example, by sintering a phosphor and a translucent material such as aluminum oxide. The content of the phosphor can be 0.05% to 50% by volume with respect to the total volume of the ceramic. Also, for example, a ceramic consisting essentially of only the phosphor obtained by sintering the phosphor powder may be used.

[0127] The main material of the reflection member 44 is, for example, ceramic. Examples of the ceramic used for the main material include aluminum oxide, aluminum nitride, silicon oxide, yttrium oxide, zirconium oxide, or magnesium oxide, etc. The reflection member 44 is, for example, a sintered body formed using ceramic as the main material. Note that the reflection member 44 does not have to use ceramic as the main material.

[0128] The wavelength conversion member 43 and the reflection member 44 can be integrally formed to form the optical member 40. For example, the optical member 40 can be formed by integrally sintering the wavelength conversion member 43 and the reflection member 44.

[0129] The metal member 42 can be formed using a metal material such as silver or aluminum, for example.

[0130] (Protective element 50) The protective element 50 has an upper surface 51A, a lower surface 51B, and one or a plurality of side surfaces 51C. The shape of the protective element 50 is a rectangular parallelepiped. Note that the shape of the protective element 50 does not have to be a rectangular parallelepiped.

[0131] The protection element 50 is for preventing a specific element (e.g., a semiconductor laser element) from being destroyed due to an excessive current flowing through it. Examples of the protection element 50 include a Zener diode. Also, as the Zener diode, one formed of Si can be adopted.

[0132] (Wiring 60) The wiring 60 is a linear conductive material with both ends being joint parts. The joint parts at both ends become the joint portions with other components. The wiring 60 is used for the electrical connection between two components. The wiring 60 is, for example, a metal wire. For the metal, for example, gold, aluminum, silver, copper, etc. can be used.

[0133] Next, the light-emitting device 1 will be described.

[0134] (Light-emitting device 1) In the light-emitting device 1, the semiconductor laser element 20 is arranged in the internal space of the package 10. The semiconductor laser element 20 is arranged on the first upper surface 11A. By arranging the semiconductor laser element 20 in a closed space, a decrease in the light output of the semiconductor laser element 20 due to dust collection can be suppressed. By making the internal space a sealed space, the influence of dust collection can be further reduced.

[0135] The light-emitting surface 22 of the semiconductor laser element 20 faces the inner surface 11E. The semiconductor laser element 20 emits light laterally from the light-emitting surface 22. The direction in which light is emitted from the light-emitting surface 22 is called the first direction. Also, in a top view, the direction perpendicular to the first direction is called the second direction. In the illustrated light-emitting device 1, the light-emitting surface 22 faces the positive direction of Y. The positive direction of Y can be said to be the first direction, and the second direction can be said to be the X direction.

[0136] The light passing through the optical axis emitted from the semiconductor laser element 20 travels in the first direction from the light-emitting surface 22. The light-emitting surface 22 of the semiconductor laser element 20 is parallel to the inner surface 11E of the package 10 in a top view. This inner surface 11E is the inner surface where the light-emitting surface 22 faces.

[0137] The semiconductor laser element 20 is mounted on the submount 30. The submount 30 is disposed on the first upper surface 11A. The semiconductor laser element 20 is disposed on the first upper surface 11A via the submount 30. The semiconductor laser element 20 is disposed in the first conductive region 36A. The semiconductor laser element 20 is disposed in the second region of the first conductive region 36A.

[0138] The semiconductor laser element 20 is electrically connected to the first conductive region 36A. One electrode of the semiconductor laser element 20 is electrically connected to the first conductive region 36A. More specifically, the electrode provided on the lower surface 21B side of the semiconductor laser element 20 is connected to the first conductive region 36A.

[0139] The semiconductor laser element 20 is disposed on the upper metal member 32B. The semiconductor laser element 20 is disposed on the second upper surface 31D. The semiconductor laser element 20 is disposed in the wiring layer 33. By having the upper metal member 32B, the position of the light emission point of the light on the light emission surface 22 can be made higher than when disposed on the first upper surface 31A.

[0140] Thus, the upper metal member 32B is electrically connected to the semiconductor laser element 20 and forms a step for adjusting the height of the semiconductor laser element 20. From such a viewpoint, the light emitting device 1 only needs to have a conductive pedestal member that forms the second upper surface 31D, and the upper metal member 32B can be regarded as an example of the conductive pedestal member.

[0141] When the mounting surface of the submount 30 is divided into two regions by a virtual straight line passing through the midpoint of the width of the second upper surface 31D in the second direction and parallel to the first direction, the light emission point of the light on the light emission surface 22 is located in the region including the second conductive region 36B among the two regions. The semiconductor laser element 20 is mounted on the second upper surface 31D at a position closer to the second conductive region 36B. Thereby, the heat generated from the components disposed on the second upper surface 31D is easily spread to the second conductive region 36B side of the submount 30.

[0142] In a top view, the semiconductor laser element 20 is disposed at a position passing through the midpoint of the width of the submount 30 in the second direction and through which a virtual straight line parallel to the first direction passes. This makes it easier to spread the heat generated from the components disposed on the second top surface 31D over the entire submount 30.

[0143] The submount 30 is disposed in the package 10 such that the longitudinal direction of the submount 30 is parallel to the first direction. In a top view, the width in the longitudinal direction of the submount 30 is 60% or more of the width in the first direction of the inner frame of the package. Alternatively, the width in the longitudinal direction of the submount 30 can be 75% or more of the width in the first direction of the inner frame of the package. This can reduce the extra space and miniaturize the light-emitting device 1.

[0144] In the light-emitting device 1, the optical member 40 is disposed in the internal space of the package 10. The optical member 40 is disposed on the first top surface 11A. The optical member 40 is mounted on the submount 30. The optical member 40 is disposed on the first top surface 11A via the submount 30.

[0145] The optical member 40 is disposed on the mounting surface of the submount 30 such that the conductive portion 42B faces the mounting surface of the submount 30. In a plan view seen from a direction perpendicular to the mounting surface of the submount 30, the optical member 40 is disposed on the mounting surface of the submount 30 such that the conductive portion 42B overlaps the first conductive region 36A and the second conductive region 36B. Thereby, the semiconductor laser element 20 electrically connected to the first conductive region 36A is electrically connected to the second conductive region 36B via the conductive portion 42B. The semiconductor laser element 20 is not electrically connected to the second conductive region 36B without passing through the conductive portion 42B.

[0146] In the light-emitting device 1 shown in the figure, a plan view seen from a direction perpendicular to the mounting surface of the submount 30 is also a top view of the submount 30. A plan view seen from a direction perpendicular to the mounting surface of the submount 30 is also a top view of the optical member 40. A plan view seen from a direction perpendicular to the mounting surface of the submount 30 is also a top view of the semiconductor laser element 20. A plan view seen from a direction perpendicular to the mounting surface of the submount 30 is also a top view of the package 10.

[0147] By making the electrical connection in this way, when the optical member 40 is detached from the submount 30, the electrical connection between the conductive portion 42B and the first conductive region 36A and the second conductive region 36B is also interrupted, and the power supply to the semiconductor laser element 20 stops. Therefore, in the light-emitting device 1, a mechanism is realized in which the emission of light from the semiconductor laser element 20 stops according to the state of the optical member 40.

[0148] By making the electrical connection in this way, abnormalities such as detachment or damage of the optical member 40 can be detected. Also, in order to electrically connect the semiconductor laser element 20 and the second conductive region 36B of the submount 30, no components other than the optical member 40 are required. Thereby, the number of parts can be suppressed and a mechanism for detecting abnormalities can be realized.

[0149] The optical member 40 is disposed in the first region of the first conductive region 36A. The optical member 40 is disposed on the first upper surface 31A. Thereby, a height difference can be provided between the lower surface 21B of the semiconductor laser element 20 and the lower surface 41B of the optical member 40. That is, since the submount 30 has the upper metal member 32B partially rather than over the entire mounting surface, the relative height difference between the components disposed on the first upper surface 31A and the components disposed on the second upper surface 31D can be adjusted.

[0150] The conductive portion 42B overlaps the first conductive region 36A, the second conductive region 36B, and the insulating region 36C in a plan view seen from a direction perpendicular to the mounting surface of the submount 30. The conductive portion 42B is joined to the first bonding layer 35A and the second bonding layer 35B.

[0151] The light emitted from the light emitting surface 22 of the semiconductor laser element 20 is incident on the light incident surface 41D of the optical member 40. The light incident surface 41D of the optical member 40 is disposed at a position away from the light emitting surface 22 in the first direction. The light emitting surface 22 faces the light incident surface 41D. The incident direction of the optical member 40 is the same as the first direction.

[0152] The width of the semiconductor laser element 20 in the first direction is larger than the width of the wavelength conversion member 43 in the first direction. The width of the semiconductor laser element 20 in the first direction is larger than the width of the optical member 40 in the first direction. Regarding the longitudinal direction of the submount 30, it is preferable that the width of the submount 30 is 1.6 times or more and 3.2 times or less the width of the upper metal member 32B. Adjusting the sizes of these components to emit sufficient light from the semiconductor laser element 20 and to perform sufficient wavelength conversion by the wavelength conversion member 43, this magnification range is preferable.

[0153] The width of the optical member 40 in the second direction is larger than the width of the second upper surface 31D in the second direction. The width in a direction parallel to the second direction passing through the midpoint of the width of the wavelength conversion member 43 in the first direction is smaller than the width of the second upper surface 31D in the second direction. When mounting the optical member 40 having a high light extraction efficiency with the reflecting member 44 on the mounting surface of the submount 30, a structure satisfying these conditions is suitable for miniaturization of the light emitting device 1.

[0154] The width of the optical member 40 in the second direction is larger than the value obtained by subtracting 600 μm from the width of the submount 30 in the second direction. The width of the optical member 40 in the second direction is smaller than the value obtained by adding 600 μm to the width of the submount 30 in the second direction. It is preferable that the width of the optical member 40 in the second direction is smaller than the width of the submount 30 in the second direction. A smaller difference in the width in the second direction between the optical member 40 and the submount 30 results in less extra space and contributes to miniaturization of the light emitting device 1.

[0155] The reflecting portion 42A is disposed on the mounting surface of the submount 30 so as to overlap the first conductive region 36A and not to overlap the second conductive region 36B in a plan view from a direction perpendicular to the mounting surface of the submount 30. Thereby, in the same plan view, the area where the reflecting portion 42A and the insulating region 36C overlap can be reduced, and the heat radiation effect from the wavelength conversion member 43 to the submount 30 is improved.

[0156] The reflecting portion 42A may overlap the insulating region 36C in a plan view from a direction perpendicular to the mounting surface of the submount 30. Thereby, compared with the case where the reflecting portion 42A is arranged so as to be included in the first conductive region 36A in the same plan view, the width of the submount 30 in the second direction can be reduced, contributing to miniaturization of the light emitting device 1.

[0157] On a virtual straight line passing through the midpoint of the width of the wavelength conversion member 43 in the first direction and parallel to the second direction, in a plan view from a direction perpendicular to the mounting surface of the submount 30, there exists a point where the wavelength conversion member 43 and the insulating region 36C overlap. In a plan view from a direction perpendicular to the mounting surface of the submount 30, the ratio of the area where the wavelength conversion member 43 and the insulating region 36C overlap to the area of the light emitting surface 41E is 5% or less. The shape of the light emitting surface 41E having the first region 43M and the second region 43N is suitable for reducing the area where the wavelength conversion member 43 and the insulating region 36C overlap.

[0158] The light emitted from the semiconductor laser element 20 and incident on the light incident surface 41D of the optical member 40 is emitted from the light emitting surface 41E. When the optical member 40 has the wavelength conversion member 43, the light wavelength-converted from the light emitted from the semiconductor laser element 20 is emitted from the light emitting surface 41E. At this time, not only the wavelength-converted light but also a part of the light emitted from the semiconductor laser element 20 may be emitted without being wavelength-converted.

[0159] For example, white light in which light having a light emission peak wavelength in the range of 430 nm to 480 nm and light wavelength-converted by a YAG phosphor are mixed is emitted from the light emitting surface 22 of the wavelength conversion member 43.

[0160] The light emitted from the light-emitting surface 41E of the optical member 40 is light of Class 3R or light with a lower degree of danger than Class 3R in the JIS standard "JIS C 6802:2018". The light-emitting device 1 emits light with enhanced safety by emitting the light emitted from the semiconductor laser element 20 not directly but through the optical member 40.

[0161] At least a part of the light incident on the optical member 40 is reflected by the reflecting member 44 before being emitted from the light-emitting surface 41E. At least a part of the light incident on the optical member 40 is reflected by the reflecting portion 42A before being emitted from the light-emitting surface 41E. Thereby, light can be efficiently emitted from the light-emitting surface 41E. When the optical member 40 has the wavelength conversion member 43, the wavelength conversion efficiency can also be improved.

[0162] The optical member 40 generates heat as light is incident and emitted. The larger the area of the reflecting portion 42A joined to the first conductive layer 34A, the better the heat dissipation effect for this heat.

[0163] In the light-emitting device 1, the protection element 50 is disposed in the internal space of the package 10. The protection element 50 is disposed on the first upper surface 11A. The protection element 50 is mounted on the submount 30. The protection element 50 is disposed on the first upper surface 11A via the submount 30.

[0164] The protection element 50 is disposed on the second upper surface 31D of the submount 30. In the second direction, the semiconductor laser element 20 is located between the protection element 50 and the second conductive region 36B.

[0165] In the light-emitting device 1, a plurality of wirings 60 are disposed in the internal space of the package 10. By providing the plurality of wirings 60, the semiconductor laser element 20 is electrically connected to the base 11. Furthermore, the protection element 50 is also electrically connected to the base 11.

[0166] The plurality of wirings 60 includes wirings 60 provided for electrically connecting the semiconductor laser element 20 to the substrate 11. The plurality of wirings 60 includes wirings 60 provided for electrically connecting the protection element 50 to the substrate 11.

[0167] The plurality of wirings 60 includes a first wiring 60A and a second wiring 60B. The first wiring 60A and the second wiring 60B are joined to different wiring portions 12A. The first wiring 60A and the second wiring 60B are joined to the first wiring portion 12A1 of the substrate 11.

[0168] Of the first wiring 60A and the second wiring 60B, one wiring 60 is joined to the semiconductor laser element 20 and the other wiring 60 is joined to the second conductive region 36B. In the illustrated light-emitting device 1, the first wiring 60A is joined to the semiconductor laser element 20 and the second wiring 60B is joined to the second conductive region 36B. The second wiring 60B is joined to a region of the second conductive layer 34B where the second bonding layer 35B is not provided.

[0169] In the second direction, since the optical member 40 has a larger width in the second direction than the semiconductor laser element 20, by providing the wiring 60 in the space generated from this width difference, the size increase of the submount 30 can be suppressed, and it can contribute to the miniaturization of the light-emitting device 1.

[0170] In a top view, the distance from the optical member 40 to the side surface 31C of the submount 30 is smaller than the distance from the position on the submount 30 where the second wiring 60B is joined to this side surface 31C. Note that this side surface 31C is a side surface extending in the first direction. A light-emitting device 1 including a submount 30 that satisfies such conditions can be realized.

[0171] The width of the second conductive layer 34B in the second direction is preferably 15% or more and 30% or less of the width of the first conductive layer 34A in the second direction. Thereby, while maintaining the width for securing the bonding region of the wiring 60, the region where the wavelength conversion member 43 and the insulating region 36C overlap in a top view can be reduced as much as possible.

[0172] The first wiring 60A is provided on one of the two electrodes of the semiconductor laser element 20. The second wiring 60B is provided on the other electrode of the two electrodes. Note that "provided on the electrode side" can be defined as being closer to this electrode than another electrode to be compared on the current path.

[0173] The conductive portion 42B of the optical member 40 is not provided on the current path between the first wiring 60A and one of the electrodes of the semiconductor laser element 20. The conductive portion 42B of the optical member 40 is provided on the current path between the second wiring 60B and the other electrode of the semiconductor laser element 20.

[0174] In a top view, with the semiconductor laser element 20 as a reference, the first wiring portion 12A1 provided on one of the two opposing inner surfaces 11E of the base 11 is joined to the first wiring 60A, and the first wiring portion 12A1 provided on the other inner surface 11E side is joined to the second wiring 60B. Neither of these two inner surfaces 11E faces the light emitting surface 22 of the semiconductor laser element 20, and is the inner surface 11E facing the side surface 21C that intersects the light emitting surface 22.

[0175] In a top view, when the base 11 is divided into two parts by a virtual straight line parallel to the first direction and passing through the insulating region 36C, the first wiring 60A is joined to one part of the base 11, and the second wiring 60B is joined to the other part of the base 11.

[0176] The semiconductor laser element 20 is electrically connected to the second wiring portion 12A2 of the base 11. The semiconductor laser element 20 is electrically connected to the second wiring portion 12A2 via the first wiring portion 12A1. In the base 11, the second wiring portion A2 that is electrically connected to the first wiring portion 12A1 to which the first wiring 60A is joined, and the second wiring portion A2 that is electrically connected to the first wiring portion 12A1 to which the second wiring 60B is joined are different wiring portions 12A from each other.

[0177] Among the plurality of wirings 60, the first wiring 60A and the second wiring 60B are included in all the wirings 60 existing on the current path from the second wiring portion 12A2 provided on one electrode side of the semiconductor laser element 20 to the second wiring portion 12A2 provided on the other electrode side. When all these wirings 60 are divided into two parts of the substrate 11 by a virtual straight line parallel to the second direction passing through the light emitting surface 22 of the semiconductor laser element 20 in a top view, they are provided on one part of the substrate 11 and not provided on the other part of the substrate 11.

[0178] The first wiring 60A is joined to the first wiring portion 12A1 provided on the first step portion 11F1. The second wiring 60B is joined to the first wiring portion 12A1 provided on the second step portion 11F2. In the light emitting device 1, the number of wiring portions 12A to which the wiring 60 is joined may be two. Thereby, the number of parts can be suppressed.

[0179] In the light emitting device 1, the light emitted from the light emitting surface 41E is emitted from the upper surface 14A. The light emitted from the upper surface 14A can be the light emitted from the light emitting device 1. From the light emitting device 1, the light emitted from the semiconductor laser element 20 and the light wavelength-converted by the wavelength conversion member 43 are combined and emitted. Thereby, for example, white light can be emitted from the light emitting device 1.

[0180] <Second Embodiment> The light-emitting device 2 according to the second embodiment will be described. FIGS. 10 to 19 are drawings for explaining an exemplary form of the light-emitting device 2. FIG. 13A is a perspective view of the light-emitting device 2. FIG. 13B is a perspective view of the light-emitting device 2 shown transparently. FIG. 14A is a top view of the light-emitting device 2 corresponding to FIG. 13B. FIG. 14B is a bottom view of the light-emitting device 2. FIG. 15 is a cross-sectional view of the light-emitting device 2 taken along the cross-section line XV-XV of FIG. 14A. FIG. 16 is a top view of the light-emitting device 2 with the lid 14 removed. FIG. 17 is a top view of the light-emitting device 2 with the lid 14 and the optical member 40 removed. FIG. 18 is a perspective view of the base 11. FIG. 19 is a top view of the base 11. In FIG. 19, the first conductive region 18A and the second conductive region 18B are each marked with hatching. FIG. 10 is a perspective view of the optical member 40. In FIG. 10, the first region 43M and the second region 43N are each marked with hatching. FIG. 11 is a bottom view of the optical member 40. In FIG. 11, the reflection part 42A and the conductive part 42B are each marked with hatching. FIG. 12 is a cross-sectional view of the optical member 40 taken along the cross-section line XII-XII of FIG. 10.

[0181] Among the descriptions related to the light-emitting device 1 and each component of the first embodiment described above, all the contents excluding the ones that can be said to be contradictory from the drawings of FIGS. 10 to 19 related to the light-emitting device 2 are also applicable as descriptions of the light-emitting device 2. To avoid duplication, all the non-contradictory contents will not be repeated here.

[0182] Also, in the description of the light-emitting device 1 according to the first embodiment described above, replace the first upper surface 31A with the first upper surface 11A, replace the second upper surface 31D with the third upper surface 11K, replace the upper metal member 32B with the conductive member 15, replace the first conductive layer 34A with the first conductive layer 16A, replace the second conductive layer 34B with the second conductive layer 16B, replace the first bonding layer 35A with the first bonding layer 17A, replace the second bonding layer 35B with the second bonding layer 17B, replace the first conductive region 36A with the first conductive region 18A, replace the second conductive region 36B with the second conductive region 18B, replace the insulating region 36C with the insulating region 18C, and replace the mounting surface of the submount 30 with the mounting surface of the substrate 11. Among these replacements, all the content that does not conflict with the drawings of FIGS. 10 to 19 related to the light-emitting device 2 is also applicable as the description of the light-emitting device 2. To avoid duplication, all the non-conflicting content will not be repeated here.

[0183] The light-emitting device 2 includes a plurality of components. These plurality of components include a package 10A, a semiconductor laser element 20, an optical member 40, a protective element 50, and a plurality of wirings 60.

[0184] Among the description of the package 10 according to the first embodiment described above, all the content that does not conflict with the drawings of FIGS. 10 to 19 related to the light-emitting device 2 is also applicable as the description of the package 10A. To avoid duplication, all the non-conflicting content will not be repeated here.

[0185] (Package 10A) The substrate 11 of the package 10A has a third upper surface 11K. The third upper surface 11K is above the first upper surface 11A and below the second upper surface 11C. The third upper surface 11K is a part of the region that defines the internal space of the package 10A.

[0186] The third upper surface 11K is provided inside the inner frame of the second upper surface 11C in a top view. The substrate 11 has a convex portion that protrudes upward from the first upper surface 11A in the recess. The third upper surface 11K is a part of the convex portion.

[0187] One or each of the first wiring portions 12A1 is provided on the first upper surface 11A. The base body 11 has a first wiring portion 12A1 provided closer to one of the opposing inner surfaces 11E and a first wiring portion 12A1 provided closer to the other inner surface 11E among the opposing inner surfaces 11E.

[0188] The base body 11 has a first conductive layer 16A and a second conductive layer 16B. The first conductive layer 16A and the second conductive layer 16B are provided on the first upper surface 11A. The first conductive layer 16A and the second conductive layer 16B are separated from each other and not electrically connected.

[0189] In a top view, the third upper surface 11K overlaps with the first conductive layer 16A. In a top view, the third upper surface 11K does not overlap with the second conductive layer 16B. In a top view, the third upper surface 11K does not overlap with one or a plurality of the first wiring portions 12A1.

[0190] The package 10A includes a conductive member 15. The conductive member 15 is provided on the first upper surface 11A. The conductive member 15 has a third upper surface 11K. In the base body 11, the conductive member 15 is electrically connected to the first conductive layer 16A. The first conductive layer 16A and the conductive member 15 are connected.

[0191] In a top view, the first conductive layer 16A is arranged in a region extending in one direction from the conductive member 15, and they are connected. This direction is referred to as the connection direction. The long side direction of the inner frame of the second upper surface 11C can be this connection direction. In the illustrated package 10A, the positive direction of Y can be said to be this connection direction.

[0192] In a top view, the second conductive layer 16B is separated from the first conductive layer 16A in a direction perpendicular to the connection direction. The direction perpendicular to the connection direction is referred to as the separation direction. In a top view, the second conductive layer 16B is separated from the conductive member 15 in the separation direction.

[0193] In a top view, the outer shape of the conductive member 15 is a rectangle having a long side and a short side. The long side direction of the outer shape of the conductive member 15 and the long side direction of the inner frame of the second upper surface 11C are in the same direction. Here, the same means including a difference of ±2 degrees.

[0194] In a top view, with respect to the long side direction of the inner frame of the second upper surface 11C, the width of the inner frame of the second upper surface 11C is less than three times the width of the conductive member 15. The former width is 1.7 times or more the latter width.

[0195] The package 10A has a first bonding layer 17A and a second bonding layer 17B. The first bonding layer 17A is provided in a partial region of the first conductive layer 16A in a top view. The second bonding layer 17B is provided in a partial region of the second conductive layer 16B in a top view.

[0196] In a top view, when the first upper surface 11A is virtually divided into two regions by a virtual straight line passing through a point on the line where the first conductive layer 16A and the conductive member 15 are connected and parallel to the separation direction, both the first bonding layer 17A and the second bonding layer 17B are provided in one region and not provided in the other region. In other words, the first bonding layer 17A and the second bonding layer 17B are provided only in the same one of the two regions.

[0197] In the base body 11, the first bonding layer 17A is electrically connected to the first conductive layer 16A, and the second bonding layer 17B is electrically connected to the second conductive layer 16B. In the base body 11, the first bonding layer 17A is not electrically connected to the second bonding layer 17B and the second conductive layer 16B. In the base body 11, the second bonding layer 17B is not electrically connected to the first bonding layer 17A and the first conductive layer 16A. The second conductive layer 16B can be the first wiring portion 12A1.

[0198] The thickness (width in the vertical direction) of the first conductive layer 16A is smaller than the thickness of the conductive member 15. The thickness of the second conductive layer 16B is smaller than the thickness of the conductive member 15. The sum of the thickness of the first conductive layer 16A and the thickness of the first bonding layer 17A is smaller than the thickness of the conductive member 15. The sum of the thickness of the second conductive layer 16B and the thickness of the second bonding layer 17B is smaller than the thickness of the conductive member 15.

[0199] The thickness of the conductive member 15 is 10 μm or more greater than the thickness of the first conductive layer 16A. The thickness of the conductive member 15 is in the range of 15 μm or more and 100 μm or less, and is greater than the thickness of the first conductive layer 16A. The thickness of the first conductive layer 16A and the thickness of the second conductive layer 16B are the same. Here, the same includes a difference of ±3 μm.

[0200] On the upper surface side of the base 11, a first conductive region 18A, a second conductive region 18B, and one or more insulating regions 18C are provided. On the mounting surface of the base 11 including the first upper surface 11A and the third upper surface 11K, a first conductive region 18A, a second conductive region 18B, and one or more insulating regions 18C are provided.

[0201] The second conductive region 18B is insulated from the first conductive region 18A via the insulating region 18C. That is, in the base 11, the first conductive region 18A and the second conductive region 18B are not electrically connected. When the first conductive region 18A or the second conductive region 18B is provided on a member having insulating properties, the insulating region 18C does not include a region overlapping the first conductive region 18A in a top view, and does not include a region overlapping the second conductive region 18B in a top view.

[0202] The first conductive region 18A is insulated from one or more first wiring portions 12A1 via the insulating region 18C. That is, in the base 11, the first conductive region 18A and one or more first wiring portions 12A1 are not electrically connected. When the first conductive region 18A or the first wiring portion 12A1 is provided on a member having insulating properties, the insulating region 18C does not include a region overlapping the first conductive region 18A in a top view, and does not include a region overlapping the first wiring portion 12A1 in a top view.

[0203] The first conductive region 18A has a first region having the first upper surface 11A and a second region having the third upper surface 11K. The second conductive region 18B has the first upper surface 11A but does not have the third upper surface 11K. The insulating region 18C has a region separating the first conductive region 18A and the second conductive region 18B in a top view.

[0204] In a top view, the substrate 11 can be divided into two regions such that a first conductive region 18A is included in one region and a second conductive region 18B is included in the other region by a virtual straight line extending in the connection direction. That is, the first conductive region 18A and the second conductive region 18B are provided so that they can be separated by one virtual straight line extending in the connection direction.

[0205] The first conductive region 18A does not have a plurality of conductive regions separated by an insulating region within the region in a top view. That is, the number of conductive regions of the first conductive region 18A is one. The second conductive region 18B does not have a plurality of conductive regions separated by an insulating region within the region in a top view. That is, the number of conductive regions of the second conductive region 18B is one.

[0206] In the package 10A, the structure formed on the substrate 32A of the submount 30 of the light-emitting device 1 is integrated as a part of the package 10. A structure having a mounting surface provided with the first conductive region 18A, the second conductive region 18B, and the insulating region 18C is a part of the package 10A.

[0207] (Light-emitting device 2) In the light-emitting device 2, the semiconductor laser element 20 is disposed on the third upper surface 11K. The semiconductor laser element 20 is mounted on the conductive member 15. In the light-emitting device 2, the optical member 40 is mounted on the substrate 11. The optical member 40 is mounted on the first upper surface 11A. In the light-emitting device 2, the protection element 50 is mounted on the substrate 11. The protection element 50 is mounted on the third upper surface 11K.

[0208] In the light-emitting device 2, when the optical member 40 is detached from the substrate 11, the electrical connection between the conductive portion 42B and the first conductive region 36A and the second conductive region 36B is also interrupted, and the power supply to the semiconductor laser element 20 is stopped. Therefore, in the light-emitting device 1, a mechanism is realized in which the emission of light from the semiconductor laser element 20 is stopped according to the state of the optical member 40.

[0209] Although the embodiments of the present invention have been described above, the light-emitting device according to the present invention is not strictly limited to the light-emitting devices of the embodiments. That is, the present invention can be realized without being limited to the outer shape and structure of the light-emitting devices disclosed in the embodiments. The present invention can be applied without necessarily including all the components. For example, when some of the components of the light-emitting device disclosed in the embodiment are not described in the claims, for those partial components, the freedom of design by those skilled in the art such as substitution, omission, shape modification, material change, etc. is recognized, and on this basis, it is specified that the invention described in the claims is applicable.

[0210] Through the content described so far in this specification, the following technical matters are disclosed. (Item 1) A semiconductor laser element having a light-emitting surface that emits light, An optical member having a conductive portion and a light-incident surface on which the light emitted from the light-emitting surface of the semiconductor laser element is incident, A mounting member having a mounting surface provided with a first conductive region, an insulating region, and a second conductive region insulated from the first conductive region via the insulating region, Comprising, The semiconductor laser element is disposed in the first conductive region of the mounting surface, The optical member is disposed on the mounting surface such that the conductive portion and the mounting surface face each other, and in a plan view from a direction perpendicular to the mounting surface, the conductive portion overlaps the first conductive region and the second conductive region, The semiconductor laser element is electrically connected to the second conductive region via the conductive portion, a light-emitting device. (Item 2) The first conductive region has a first region having a first upper surface and a second region having a second upper surface above the first upper surface, The semiconductor laser element is disposed in the second region of the first conductive region, The optical member is disposed in the first region of the first conductive region, the light-emitting device according to Item 1. (Item 3) The mounting member includes a first conductive layer, a second conductive layer, and a conductive base member that forms the second upper surface. The first upper surface overlaps with the first conductive layer in a top view. The second upper surface overlaps with the base member in a top view. The light-emitting device according to item 2, wherein the thickness of the first conductive layer is smaller than the thickness of the base member. (Item 4) The semiconductor laser element emits light in a first direction from the light-emitting surface. The light-incident surface of the optical member is disposed at a position away from the semiconductor laser element in the first direction. The light-emitting device according to any one of items 1 to 3, wherein the light-emitting surface of the semiconductor laser element faces the light-incident surface of the optical member. (Item 5) The optical member has a light-emitting surface. The light-emitting device according to any one of items 1 to 4, wherein the conductive portion is provided on the side opposite to the light-emitting surface of the optical member. (Item 6) The light-emitting device according to any one of items 1 to 5, wherein the area of the first conductive region is larger than the area of the second conductive region in a plan view. (Item 7) A substrate having a plurality of wiring portions, A plurality of wirings including a first wiring and a second wiring that are joined to different wiring portions, respectively. The first wiring is joined to the semiconductor laser element. The light-emitting device according to any one of items 1 to 6, wherein the second wiring is joined to the second conductive region. (Item 8) The light-emitting device further includes a package that defines an internal space in which the semiconductor laser element and the optical member are disposed. The light-emitting device according to any one of items 1 to 7, wherein the mounting member is a part of the package. (Item 9) The light-emitting device further includes a package that defines an internal space in which the semiconductor laser element and the optical member are disposed. The light-emitting device according to any one of claims 1 to 8, wherein the mounting member is disposed on a plane defining an internal space of the package. (Claim 10) The optical member has a light-emitting surface, The light emitted from the light-emitting surface of the semiconductor laser element is Class 4 light in JIS standard JIS C 6802:2018, The light-emitting device according to any one of claims 1 to 9, wherein the light emitted from the light-emitting surface of the optical member is Class 3R light or light with a lower degree of danger than Class 3R in JIS standard JIS C 6802:2018.

Industrial Applicability

[0211] The light-emitting device described in the embodiment can be used for lighting. That is to say, lighting can be regarded as one application form to which the present invention is applied. Note that the present invention is not limited to this, and can be used in various application forms such as projectors, exposure devices, in-vehicle headlights, head-mounted displays, and backlights for other displays.

Explanation of Reference Numerals

[0212] 1 Light-emitting device 10 Package 11 Substrate 11A First upper surface 11B Lower surface 11C Second upper surface 11D Outer surface 11E Inner surface 11F Step portion 11F1 First step portion 11F2 Second step portion 11G Upper surface 11H Side surface 11M Base portion 11N Frame portion 12A Wiring portion 12A1 First wiring portion 12A2 Second wiring portion 13A Bonding pattern 14 Cover 14A Upper surface 14B Below 14C Side 20 Semiconductor laser element 21A Upper surface 21B Lower surface 21C Side 22 Light emitting surface 30 Submount 31A First upper surface 31B Lower surface 31C Side 31D Second upper surface 32A Substrate 32B Upper metal member 32C Lower metal member 33 Wiring layer 34A First conductive layer 34B Second conductive layer 35A First bonding layer 35B Second bonding layer 36A First conductive region 36B Second conductive region 36C Insulating region 40 Optical member 41A Upper surface 41B Lower surface 41C Side 41D Light incident surface 41E Light emitting surface 42 Metal member 42A Reflective portion 42B Conductive portion 43 Wavelength conversion member 43A Upper surface 43B Lower surface 43C Side 43M First region 43N Second region 44 Reflective member 44A Upper surface 44B Lower surface 44C Outer surface 44D Inner surface 50 Protection element 51A Upper surface 51B Lower surface 51C Side 60 Wiring 60A First wiring 60B Second Wiring 10A Package 11K Third Top Surface 15 Conductive Member 16A First Conductive Layer 16B Second Conductive Layer 17A First Bonding Layer 17B Second Bonding Layer 18A First Conductive Region 18B Second Conductive Region 18C Insulating Region

Claims

1. A semiconductor laser element having a light emitting surface that emits light, an optical member having a conductive portion and a light incident surface on which the light emitted from the light emitting surface of the semiconductor laser element is incident, a mounting member having a mounting surface provided with a first conductive region, an insulating region, and a second conductive region insulated from the first conductive region via the insulating region, comprising: the semiconductor laser element is disposed in the first conductive region of the mounting surface, the optical member is disposed on the mounting surface such that the conductive portion and the mounting surface face each other and, in a plan view from a direction perpendicular to the mounting surface, the conductive portion overlaps the first conductive region and the second conductive region, the semiconductor laser element is electrically connected to the second conductive region via the conductive portion, a light emitting device.

2. The first conductive region has a first region having a first upper surface and a second region having a second upper surface above the first upper surface, the semiconductor laser element is disposed in the second region of the first conductive region, the optical member is disposed in the first region of the first conductive region, the light emitting device according to claim 1.

3. The mounting member has a first conductive layer, a second conductive layer, and a conductive pedestal member that forms the second upper surface, the first upper surface overlaps the first conductive layer in a top view, the second upper surface overlaps the pedestal member in a top view, the thickness of the first conductive layer is smaller than the thickness of the pedestal member, the light emitting device according to claim 2.

4. The semiconductor laser element emits light in a first direction from the light emitting surface, the light incident surface of the optical member is disposed at a position away from the semiconductor laser element in the first direction, the light emitting surface of the semiconductor laser element faces the light incident surface of the optical member, the light emitting device according to claim 1.

5. The optical member has a light emitting surface, the conductive portion is provided on the opposite side of the light emitting surface of the optical member, the light emitting device according to claim 1.

6. In the plan view, the area of the first conductive region is larger than the area of the second conductive region, the light emitting device according to claim 1.

7. a substrate having a plurality of wiring portions, a plurality of wirings including a first wiring and a second wiring that join to different wiring portions, the first wiring joins to the semiconductor laser element, the second wiring joins to the second conductive region, the light emitting device according to claim 1.

8. The light-emitting device further includes a package that defines an internal space in which the semiconductor laser element and the optical member are disposed. The mounting member is part of the package, and the light-emitting device according to claim 1. **Claim 9** The light-emitting device further includes a package that defines an internal space in which the semiconductor laser element and the optical member are disposed. The mounting member is disposed on a plane that defines the internal space of the package, and the light-emitting device according to claim 1. **Claim 10** The optical member has a light-emitting surface. The light emitted from the light-emitting surface of the semiconductor laser element is Class 4 light in JIS standard JIS C 6802:2018. The light emitted from the light-emitting surface of the optical member is Class 3R light or light with a lower degree of danger than Class 3R in JIS standard JIS C 6802:2018, and the light-emitting device according to claim 1.

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