Semiconductor light-emitting device

Abstract

To provide a semiconductor light-emitting device capable of reducing stray light.SOLUTION: A semiconductor light-emitting device A1 comprises a semiconductor light-emitting element 4, a conduction support member 1, and a first resin part 61. The conduction support member 1 supports the semiconductor light-emitting element 4. The first resin part 61 covers the semiconductor light-emitting element 4. The first resin part 61 includes a translucent resin material and a light-absorptive powder.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present disclosure relates to a semiconductor light-emitting device.

Background Art

[0002] Conventionally, a semiconductor light-emitting device includes a semiconductor light-emitting element (LED: Light Emitting Diode) as a light source. Patent Document 1 discloses an example of a conventional semiconductor light-emitting device (LED module). The LED module disclosed in the document includes a substrate, a pair of electrodes, an LED chip, bonding wires, and a resin package. The substrate is an insulating substrate made of, for example, glass epoxy resin. Each of the pair of electrodes is electrically connected to the LED chip. A part of each of the pair of electrodes is used as a mounting terminal for mounting the LED module. The LED chip is the light source of the LED module. The LED chip is bonded to one of the pair of electrodes by, for example, silver paste and is electrically connected to one of the pair of electrodes through the silver paste. Further, the LED chip is electrically connected to the other of the pair of electrodes through bonding wires. The resin package is for protecting the LED chip and the bonding wires. The resin package has translucency with respect to light from the LED chip. The resin package is molded using, for example, epoxy resin.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a semiconductor light-emitting device, stray light may occur. Stray light is a phenomenon in which light is generated outside the originally assumed optical path. Stray light is generated, for example, by diffusion of light from an LED chip and specular reflection at the interface of a resin package. Stray light degrades the appearance of the semiconductor light-emitting device and causes a decrease in the marketability of the semiconductor light-emitting device. Further, when the semiconductor light-emitting device is used as an optical sensor, stray light may cause a decrease in performance such as detection accuracy and detection distance.

[0005] The present disclosure has been conceived in view of the above circumstances, and an object thereof is to provide a semiconductor light-emitting device capable of reducing stray light.

Means for Solving the Problems

[0006] The semiconductor light-emitting device of the present disclosure includes a semiconductor light-emitting element, an electrically conductive support member that supports the semiconductor light-emitting element, and a first resin portion that covers the semiconductor light-emitting element, and the first resin portion includes a light-transmitting resin material and light-absorbing powder.

Effects of the Invention

[0007] According to this configuration, the semiconductor light-emitting device can reduce stray light.

Brief Description of the Drawings

[0008]

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Embodiments for Carrying Out the Invention

[0009] Preferred embodiments of the semiconductor light emitting device of the present disclosure will be described below with reference to the drawings. Hereinafter, the same or similar components will be denoted by the same reference numerals, and redundant descriptions will be omitted. The terms "first", "second", "third", etc. in the present disclosure are merely used as labels and are not necessarily intended to assign an order to their objects.

[0010] In the present disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (the) certain object B" include "a certain object A is directly formed on a certain object B", and "a certain object A is formed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, unless otherwise specified, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (the) certain object B" include "a certain object A is directly disposed on a certain object B", and "a certain object A is disposed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, unless otherwise specified, "a certain object A is located on (the) certain object B" includes "a certain object A is in contact with a certain object B and a certain object A is located on (the) certain object B", and "a certain object A is located on (the) certain object B with another object intervening between the certain object A and the certain object B". Further, unless otherwise specified, "a certain object A overlaps a certain object B when viewed in a certain direction" includes "a certain object A overlaps all of a certain object B", and "a certain object A overlaps a part of a certain object B". Further, "a certain object A (the material thereof) contains a certain material C" includes "the case where a certain object A (the material thereof) consists of a certain material C", and "the case where the main component of a certain object A (the material thereof) is a certain material C".

[0011] Figs. 1 to 7 show a semiconductor light-emitting device A1 according to the first embodiment. The semiconductor light-emitting device A1 includes a conduction support member 1, a semiconductor light-emitting element 4, a wire 5, a first resin portion 61, and a case 7.

[0012] For convenience of explanation, the thickness direction of the semiconductor light-emitting device A1 is referred to as the "thickness direction z". In the following description, one of the thickness direction z may be referred to as upward and the other as downward. Note that descriptions such as "up", "down", "upward", "downward", "upper surface" and "lower surface" indicate the relative positional relationship of each component etc. in the thickness direction z, and are not necessarily terms defining the relationship with the gravitational direction. Also, "plan view" means when viewed in the thickness direction z. The direction orthogonal to the thickness direction z is referred to as the "first direction x". The first direction x is the left-right direction in the plan view of the semiconductor light-emitting device A1 (see Fig. 2). The direction orthogonal to the thickness direction z and the first direction x is referred to as the "second direction y". The second direction y is the up-down direction in the plan view of the semiconductor light-emitting device A1 (see Fig. 2).

[0013] The conduction support member 1 serves as a base of the semiconductor light-emitting device A1. As shown in Figs. 2 and 7, a semiconductor light-emitting element 4 is mounted on the conduction support member 1. The conduction support member 1 supports the semiconductor light-emitting element 4 and constitutes a conduction path for supplying power to the semiconductor light-emitting element 4. The conduction support member 1 is rectangular in plan view as shown in Figs. 2 and 4. The conduction support member 1 includes a base material 2 and a wiring portion 3.

[0014] The base material 2 includes, for example, an insulating material. As the insulating material, for example, glass epoxy resin, ceramic, or single crystal semiconductor etc. are used. The base material 2 is rectangular in plan view. The plan view shape of the base material 2 is not limited to a rectangle and may be a polygon. In the illustrated example, the base material 2 has the first direction x as the longitudinal direction in plan view, but the second direction y may be the longitudinal direction. The size of the base material 2 is not particularly limited, but the thickness (dimension in the thickness direction z) of the base material 2 is, for example, 0.10 mm or more and 0.50 mm or less. The dimension of the base material 2 in the first direction x is, for example, 1.8 mm or more and 2.2 mm or less, and the dimension of the base material 2 in the second direction y is, for example, 1.05 mm or more and 1.45 mm or less.

[0015] The base material 2 has a base material front surface 201, a base material back surface 202, and a plurality of base material side surfaces 203 to 206. The base material front surface 201 and the base material back surface 202 are spaced apart from each other in the thickness direction z. The base material front surface 201 faces upward in the thickness direction z, and the base material back surface 202 faces downward in the thickness direction z. Each of the plurality of base material side surfaces 203 to 206 is sandwiched between the base material front surface 201 and the base material back surface 202 in the thickness direction z and is connected to them. A pair of base material side surfaces 203 and 204 are spaced apart from each other in the first direction x and face opposite sides in the first direction x. A pair of base material side surfaces 205 and 206 are spaced apart from each other in the second direction y and face opposite sides in the second direction y.

[0016] A through-hole portion 203a is formed in the base material side surface 203, and a through-hole portion 204a is formed in the base material side surface 204. The through-hole portion 203a is a portion that is recessed inward from the base material side surface 203 in a plan view. The through-hole portion 204a is a portion that is recessed inward from the base material side surface 203 in a plan view. Each of the through-hole portions 203a and 204a penetrates in the thickness direction z from the base material front surface 201 to the base material back surface 202. As shown in FIGS. 2 and 4, each of the through-hole portions 203a and 204a is, for example, semicircular in a plan view.

[0017] The wiring portion 3 is formed on the base material 2 and constitutes a conduction path to the semiconductor light-emitting element 4. The wiring portion 3 contains a conductive material. The conductive material is, for example, copper or a copper alloy, but it is neither copper nor a copper alloy, but nickel or a nickel alloy, gold or a gold alloy, iron or an iron alloy, or aluminum or an aluminum alloy. The wiring portion 3 is formed, for example, by plating. The wiring portion 3 includes a pair of main surface electrode portions 31 and 32, a pair of side portions 33 and 34, and a pair of back surface electrode portions 35 and 36.

[0018] Each of the pair of main surface electrode portions 31 and 32 is formed on the base material front surface 201. The pair of main surface electrode portions 31 and 32 are spaced apart from each other in the first direction x.

[0019] As shown in FIG. 2, the main surface electrode portion 31 includes a die bonding portion 311, a first edge portion 312, and a first connecting portion 313. The die bonding portion 311, the first edge portion 312, and the first edge portion 312 are integrally formed. As shown in FIG. 7, a semiconductor light-emitting element 4 is mounted on the die bonding portion 311. The die bonding portion 311 is electrically connected to the semiconductor light-emitting element 4 (the back surface electrode 42 described later). In the illustrated example, the die bonding portion 311 is rectangular in plan view. The plan view shape of the die bonding portion 311 is not limited to a rectangle, and may be circular, elliptical, polygonal, or the like. The die bonding portion 311 is formed in a region including the center of the substrate main surface 201 in plan view. The first edge portion 312 covers the vicinity of the portion of the substrate main surface 201 that leads to the through hole portion 203a. In the illustrated example, the first edge portion 312 forms a semi-annular shape concentric with the through hole portion 203a in plan view. The first connecting portion 313 connects the die bonding portion 311 and the first edge portion 312. The first connecting portion 313 is strip-shaped and extends in the first direction x in plan view.

[0020] As shown in FIG. 2, the main surface electrode portion 32 includes a wire bonding portion 321, a second edge portion 322, and a second connecting portion 323. The wire bonding portion 321, the second edge portion 322, and the second connecting portion 323 are integrally formed. As shown in FIG. 7, a wire 5 is bonded to the wire bonding portion 321. The wire bonding portion 321 is electrically connected to the semiconductor light-emitting element 4 (main surface electrode 41 described later) via the wire 5. The wire bonding portion 321 is spaced apart from the die bonding portion 311 on one side in the first direction x (the left side in FIG. 2). The wire bonding portion 321 is rectangular in plan view. The shape of the wire bonding portion 321 in plan view is not limited to a rectangle, and may be circular, elliptical, polygonal, or the like. The second edge portion 322 covers the vicinity of the portion connected to the through hole portion 204a in the base material main surface 201. In the illustrated example, the second edge portion 322 forms a semi-annular shape concentric with the through hole portion 204a in plan view. The second connecting portion 323 connects the wire bonding portion 321 and the second edge portion 322. The second connecting portion 323 is strip-shaped and extends in the first direction x in plan view.

[0021] As shown in FIGS. 2 and 7, the side portion 33 covers the through hole portion 203a formed in the base material side surface 203. The side portion 33 is connected to the main surface electrode portion 31 (the first edge portion 312) and the back surface electrode portion 35. The main surface electrode portion 31 and the back surface electrode portion 35 are electrically connected via the side portion 33. As shown in FIGS. 2 and 7, the side portion 34 covers the through hole portion 204a formed in the base material side surface 204. The side portion 34 is connected to the main surface electrode portion 32 (the second edge portion 322) and the back surface electrode portion 36. The main surface electrode portion 32 and the back surface electrode portion 36 are electrically connected via the side portion 34.

[0022] As shown in FIGS. 4 and 7, a pair of back electrode portions 35 and 36 are formed on the back surface 202 of the base material. The pair of back electrode portions 35 and 36 are spaced apart from each other in the first direction x. The back electrode portion 35 is connected to the side portion 33. The back electrode portion 35 is electrically connected to the semiconductor light-emitting element 4 (back electrode 42 described later) via the side portion 33 and the main surface electrode portion 31. The back electrode portion 36 is connected to the side portion 34. The back electrode portion 36 is electrically connected to the semiconductor light-emitting element 4 (main surface electrode 41 described later) via the side portion 34, the main surface electrode portion 32, and the wire 5. When the semiconductor light-emitting device A1 is mounted on a circuit board (not shown) such as an electronic device, the pair of back electrode portions 35 and 36 are joined to the circuit board by a conductive bonding material such as solder. That is, the pair of back electrode portions 35 and 36 are terminals in the semiconductor light-emitting device A1.

[0023] The semiconductor light-emitting element 4 is a light source of the semiconductor light-emitting device A1. The semiconductor light-emitting element 4 is, for example, an LED. The semiconductor light-emitting element 4 emits, for example, red light or infrared light. The wavelength of the light emitted by the semiconductor light-emitting element 4 is, for example, 610 nm or more and 780 nm or less (red light) or 780 nm or more and 1000 μm or less (infrared light). Note that the wavelength of the light emitted by the semiconductor light-emitting element 4 is not limited to these numerical examples. That is, the light emitted from the semiconductor light-emitting element 4 is not limited to red light or infrared light. As shown in FIG. 7, the semiconductor light-emitting element 4 is mounted on the main surface 201 of the base material. The semiconductor light-emitting element 4 is joined to the die-bonding portion 311 of the main surface electrode portion 31 via the conductive bonding material 49. The conductive bonding material 49 is, for example, solder, sintered metal, or a metal paste material. The size of the semiconductor light-emitting element 4 is not limited in any way, but an example is as follows. The thickness of the semiconductor light-emitting element 4 is, for example, 130 μm or more and 220 μm or less. The dimension of the semiconductor light-emitting element 4 in the first direction x is, for example, 320 μm or more and 520 μm or less. The dimension of the semiconductor light-emitting element 4 in the second direction y is, for example, 320 μm or more and 520 μm or less.

[0024] The semiconductor light-emitting element 4 has a device main surface 401, a device back surface 402, and a plurality of device side surfaces 403 to 406. The device main surface 401 and the device back surface 402 are spaced apart from each other in the thickness direction z. The device main surface 401 faces upward in the thickness direction z, and the device back surface 402 faces downward in the thickness direction z. That is, the device main surface 401 faces the same direction as the substrate main surface 201, and the device back surface 402 faces the same direction as the substrate back surface 202. The device back surface 402 faces the conductive support member 1. Each of the plurality of device side surfaces 403 to 406 is sandwiched between the device main surface 401 and the device back surface 402 in the thickness direction z and is connected to these. A pair of device side surfaces 403 and 404 are spaced apart from each other in the first direction x and face opposite sides in the first direction x. A pair of device side surfaces 405 and 406 are spaced apart from each other in the second direction y and face opposite sides in the second direction y.

[0025] The semiconductor light-emitting element 4 has, for example, a vertical structure. The semiconductor light-emitting element 4 has a main surface electrode 41 and a back surface electrode 42. The semiconductor light-emitting element 4 emits light by an electric current flowing between the main surface electrode 41 and the back surface electrode 42. As shown in FIG. 7, the main surface electrode 41 is formed on the device main surface 401. A wire 5 is joined to the main surface electrode 41. The main surface electrode 41 is electrically connected to the wire bonding portion 321 via the wire 5. As shown in FIG. 7, the back surface electrode 42 is formed on the device back surface 402. The back surface electrode 42 is electrically connected to the die bonding portion 311 via the conductive bonding material 49.

[0026] The wire 5 electrically connects two portions spaced apart from each other. The wire 5 is a bonding wire. The wire 5 contains, for example, any one of gold, aluminum, or copper.

[0027] The wire 5 includes a pair of joint portions 51 and 52 and a connection portion 53. The joint portion 51 is a portion of the wire 5 joined to the main surface electrode 41. The joint portion 52 is a portion of the wire 5 joined to the wire bonding portion 321. The connection portion 53 is a portion of the wire 5 connecting the pair of joint portions 51 and 52. In the illustrated example, the loop shape of the wire 5 is triangular, but it may be trapezoidal.

[0028] The first resin portion 61 is supported by the conduction support member 1. The first resin portion 61 covers the semiconductor light-emitting element 4 and the wire 5. The first resin portion 61 contains a light-transmitting resin material and light-absorbing powder. The first resin portion 61 is obtained by mixing the light-absorbing powder into the light-transmitting resin material, and in the first resin portion 61, the light-absorbing powder is dispersed in the light-transmitting resin material.

[0029] The light-transmitting resin material includes, for example, an epoxy resin or a silicone resin. In the present embodiment, the light-transmitting resin material is transparent, but may also be translucent. Further, the light-transmitting resin material may contain a fluorescent material. In this case, the fluorescent material is excited by the light from the semiconductor light-emitting element 4, so that the semiconductor light-emitting device A1 emits light in a wavelength range different from the light from the semiconductor light-emitting element 4.

[0030] The light-absorbing powder absorbs the light from the semiconductor light-emitting element 4. The higher the content ratio of the light-absorbing powder in the first resin portion 61, the lower the luminous intensity of the light emitted from the semiconductor light-emitting element 4. In the present embodiment, the content ratio of the light-absorbing powder in the first resin portion 61 is, for example, 0.1% or more and 10% or less (preferably 0.5% or more and 0.7% or less). The light-absorbing powder in the present embodiment is, for example, titanium black (titanium oxynitride). In the example where the light-absorbing powder is titanium black, the transmittance of the light-absorbing powder is lower for each wavelength of red light and infrared light and higher for each wavelength of violet light and ultraviolet light compared to the transmittance of carbon black. Further, the particle size of the light-absorbing powder is not limited at all, but is, for example, 62 nm or more and 75 nm or less. Note that the light-absorbing powder may be any material that absorbs the light from the semiconductor light-emitting element 4. For example, it may be carbon black instead of titanium black.

[0031] The first resin part 61 is rectangular in plan view. The first resin part 61 has a first resin main surface 611, a first resin back surface 612, and a plurality of first resin side surfaces 613 to 616. The first resin main surface 611 and the first resin back surface 612 are spaced apart in the thickness direction z. The first resin main surface 611 faces upward in the thickness direction z, and the first resin back surface 612 faces downward in the thickness direction z. Each of the plurality of first resin side surfaces 613 to 616 is sandwiched between and connected to the first resin main surface 611 and the first resin back surface 612 in the thickness direction z. A pair of first resin side surfaces 613, 614 are spaced apart in the first direction x. The pair of first resin side surfaces 613, 614 face opposite sides in the first direction x. The pair of first resin side surfaces 613, 614 face the same direction as a pair of element side surfaces 403, 404 in the first direction x. A pair of first resin side surfaces 615, 616 are spaced apart in the second direction y. The pair of first resin side surfaces 615, 616 face opposite sides in the second direction y. The pair of first resin side surfaces 615, 616 face the same direction as a pair of element side surfaces 405, 406 in the second direction y.

[0032] An example of the size of the first resin part 61 is as follows. The thickness of the first resin part 61 (the dimension along the thickness direction z between the first resin main surface 611 and the first resin back surface 612) is 20 μm or more and 400 μm or less. The dimension of the first resin part 61 in the first direction x (the dimension along the first direction x of the pair of first resin side surfaces 613, 614) is 390 μm or more and 1.4 mm or less. The dimension of the first resin part 61 in the second direction y (the dimension along the second direction y of the pair of first resin side surfaces 615, 616) is 390 μm or more and 650 μm or less.

[0033] Further, the first resin portion 61 has, for example, the following dimensional relationship. That is, the thickness of the portion of the first resin portion 61 that covers the upper part of the semiconductor light-emitting element 4 (hereinafter referred to as "covering thickness") is 1% or more and 103% or less with respect to the width of the portion of the first resin portion 61 that covers the side of the semiconductor light-emitting element 4 (hereinafter referred to as "covering width"). In the present embodiment, as the covering thickness, the distance d1 (see FIG. 7) along the thickness direction z between the element main surface 401 and the first resin main surface 611 is used, and as the covering width, the distance d2 (see FIG. 7) along the first direction x between the element side surface 404 and the first resin side surface 614 is used. That is, in the present embodiment, the distance d1 is 1% or more and 103% or less with respect to the distance d2. Note that the covering width may be the distance along the first direction x between the first resin side surface 613 and the element side surface 403, instead of the distance d2 along the first direction x between the element side surface 404 and the first resin side surface 614, or the distance along the second direction y between the first resin side surface 615 and the element side surface 405, or the distance along the second direction y between the first resin side surface 616 and the element side surface 406. The covering width in the present embodiment uses the distance d2, which is the relatively largest value among these distances (including the distance d2), but different from this configuration, it may be the relatively smallest value. Alternatively, based on the location where stray light is generated when the first resin portion 61 does not contain light-absorbing powder, the length to be the covering width may be determined.

[0034] As shown in FIGS. 3 and 5 to 7, the case 7 is disposed on the base material main surface 201. The case 7 is disposed on the side where the semiconductor light-emitting element 4 is disposed in the thickness direction z with respect to the conduction support member 1. As shown in FIGS. 1 and 2, the case 7 is a frame body. The case 7 surrounds the semiconductor light-emitting element 4 and the first resin portion 61 in a plan view. The material of the case 7 is not limited at all, but is, for example, an epoxy resin or a silicone resin. The color of the case 7 is not limited at all, but is preferably black.

[0035] Case 7 has an upper surface 71, a plurality of outer surfaces 731 to 734, and a plurality of inner surfaces 741 to 744. The upper surface 71 is rectangular annular as shown in FIGS. 1 and 2. In the illustrated example, as shown in FIG. 7, the upper surface 71 is flush with the first resin main surface 611. Different from this example, the first resin main surface 611 may be recessed downward in the thickness direction z with respect to the upper surface 71, or may protrude upward in the thickness direction z with respect to the upper surface 71. Each of the plurality of outer surfaces 731 to 734 is connected to the upper surface 71. A pair of outer surfaces 731, 732 are spaced apart from each other in the first direction x. A pair of outer surfaces 731, 732 face opposite sides in the first direction x. A pair of outer surfaces 733, 734 are spaced apart from each other in the second direction y. A pair of outer surfaces 733, 734 face opposite sides in the second direction y. The plurality of outer surfaces 731 to 734 are flush with the plurality of substrate side surfaces 203 to 206 respectively. Each of the pair of inner surfaces 741 to 744 is connected to the upper surface 71. A pair of inner surfaces 741, 742 face opposite sides in the first direction x. A pair of inner surfaces 741, 742 face each other in the first direction x. A pair of inner surfaces 743, 744 are spaced apart in the second direction y. A pair of inner surfaces 743, 744 face each other in the second direction y. The plurality of inner surfaces 741 to 744 are in contact with the plurality of first resin side surfaces 613 to 616 respectively.

[0036] The operation and effects of the semiconductor light emitting device A1 are as follows.

[0037] The semiconductor light emitting device A1 includes a first resin portion 61 that covers the semiconductor light emitting element 4. The first resin portion 61 includes a translucent resin material and light absorbing powder. According to this configuration, the light from the semiconductor light emitting element 4 is absorbed by the light absorbing powder of the first resin portion 61 and decreases. Therefore, it is possible to reduce the diffused light from the semiconductor light emitting element 4, the reflected light reflected at the interfaces of each part (for example, the interface between the first resin portion 61 and the conduction support member 1 and the interface between the first resin portion 61 and the case 7, etc.). That is, the semiconductor light emitting device A1 can reduce stray light. For this reason, it becomes possible to make the semiconductor light emitting device A1 emit light as a clearer point light source.

[0038] In the semiconductor light-emitting device A1, the content ratio of the light-absorbing powder in the first resin portion 61 is 0.1% or more and 10% or less. The greater the content ratio of this light-absorbing powder, the more effective the reduction of stray light, but on the other hand, it causes a decrease in luminous intensity. Conversely, the smaller the content ratio of this light-absorbing powder, the more the decrease in luminous intensity can be suppressed, but on the other hand, the effect of reducing stray light becomes weaker. Therefore, in the semiconductor light-emitting device A1, by setting the content ratio of the light-absorbing powder in the first resin portion 61 within the above range (0.1% or more and 10% or less), it is possible to suppress the decrease in luminous intensity while reducing stray light.

[0039] In the semiconductor light-emitting device A1, the light-absorbing powder of the first resin portion 61 is titanium black. According to this configuration, the transmittance for each wavelength of red light or infrared light is lower than that in the case of carbon black. That is, the semiconductor light-emitting device A1 can reduce the stray light of red light or infrared light more than when the light-absorbing powder of the first resin portion 61 is carbon black. Therefore, the semiconductor light-emitting device A1 is effective in reducing stray light in a configuration where the semiconductor light-emitting element 4 emits red light or infrared light. Also, since titanium black is superior in electrical insulation to carbon black, the semiconductor light-emitting device A1 improves the electrical insulation more than when the light-absorbing powder of the first resin portion 61 is carbon black.

[0040] In the semiconductor light-emitting device A1, the case 7 contains a black resin. According to this configuration, the reflection of light at the interface between the case 7 and the first resin portion 61 is reduced. Therefore, the semiconductor light-emitting device A1 can further reduce stray light.

[0041] In the semiconductor light-emitting device A1, the distance d1 (the above-mentioned coating thickness) along the thickness direction z between the element main surface 401 and the first resin main surface 611 is 1% or more and 103% or less with respect to the distance d2 (the above-mentioned coating width) along the first direction x between the element side surface 404 and the first resin side surface 614. Since the semiconductor light-emitting element 4 is covered with the first resin portion 61, the light emitted upward in the thickness direction z from the semiconductor light-emitting element 4 is reduced by the light-absorbing powder of the first resin portion 61. That is, the luminous intensity of the light irradiated upward in the thickness direction z from the semiconductor light-emitting element 4 decreases. Therefore, in the semiconductor light-emitting device A1, after securing an appropriate coating width (for example, the distance d2) that can reduce stray light, the distance d1 is set within the above range (1% or more and 103% or less) with respect to the distance d2, thereby reducing the above-mentioned coating thickness. As a result, the semiconductor light-emitting device A1 can suppress a decrease in luminous intensity above the thickness direction z while securing an appropriate coating width for reducing stray light. That is, the semiconductor light-emitting device A1 can improve directivity.

[0042] Hereinafter, other embodiments and modifications of the semiconductor light-emitting device of the present disclosure will be described. Note that the configurations of each part in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0043] FIGS. 8 and 9 show a semiconductor light-emitting device A11 according to a modification of the first embodiment. The semiconductor light-emitting device A11 is different from the semiconductor light-emitting device A1 in that a recess 619 is formed in the first resin portion 61.

[0044] As shown in FIG. 9, the recess 619 is recessed downward in the thickness direction z from the first resin main surface 611. The recess 619 is disposed above the semiconductor light-emitting element 4 in the thickness direction z. In the illustrated example, the recess 619 has a frustum of a pyramid shape. Different from this configuration, the recess 619 may have a frustum of a cone shape.

[0045] The recess 619 includes a bottom portion 619a and a wall portion 619b. As shown in FIG. 9, the bottom portion 619a is located between the first resin main surface 611 and the first resin back surface 612 in the thickness direction z. In the present embodiment, the bottom portion 619a is located above the top portion 54 of the wire 5 in the thickness direction z. As shown in FIG. 8, the bottom portion 619a overlaps the semiconductor light-emitting element 4 in plan view. In the illustrated example, the bottom portion 619a is rectangular in plan view. The shape of the bottom portion 619a in plan view is not limited to a rectangle, and may be circular, elliptical, or polygonal. The wall portion 619b is connected to the bottom portion 619a and the first resin main surface 611. In the illustrated example, the wall portion 619b is inclined with respect to the thickness direction z, but may be parallel to the thickness direction z.

[0046] Also in the semiconductor light-emitting device A11, similar to the semiconductor light-emitting device A1, since the first resin portion 61 includes a light-transmissive resin material and a light-absorbing powder, stray light can be reduced. Therefore, the semiconductor light-emitting device A11 can emit light as a clearer point light source.

[0047] In the semiconductor light-emitting device A11, a recess 619 is formed in the first resin portion 61. According to this configuration, the upper portion of the first resin portion 61 in the thickness direction z of the semiconductor light-emitting element 4 becomes thinner. Therefore, a decrease in the light intensity due to the light-absorbing powder of the first resin portion 61 is suppressed with respect to the light irradiated upward in the thickness direction z from the semiconductor light-emitting element 4. That is, the semiconductor light-emitting device A11 can suppress a decrease in the light intensity in the upward direction in the thickness direction z while suppressing stray light.

[0048] FIGS. 10 and 11 show a semiconductor light-emitting device A2 according to the second embodiment. The semiconductor light-emitting device A2 is different from the semiconductor light-emitting device A1 in that it further includes a second resin portion 62.

[0049] The second resin part 62 is disposed on the first resin main surface 611 of the first resin part 61. Similar to the first resin part 61, the second resin part 62 is surrounded by the case 7. The absorbance of the second resin part 62 is lower than the absorbance of the first resin part 61 with respect to the wavelength of the light from the semiconductor light-emitting element 4. That is, the absorbance of the first resin part 61 is higher than the absorbance of the second resin part 62. In the present embodiment, the second resin part 62 contains a translucent resin. As this translucent resin, for example, an epoxy resin or a silicone resin is used. This translucent resin may be transparent or translucent. Further, this translucent resin may contain titanium oxide or a fluorescent material. Different from the first resin part 61, the second resin part 62 does not contain light-absorbing powder, but the second resin part 62 may contain light-absorbing powder as long as the above absorbance relationship is satisfied.

[0050] As shown in FIGS. 10 and 11, the second resin part 62 has a second resin main surface 621, a second resin back surface 622, and a plurality of second resin side surfaces 623 to 626. The second resin main surface 621 and the second resin back surface 622 are spaced apart from each other in the thickness direction z and face opposite sides. The second resin back surface 622 is in contact with the second resin main surface 621. Each of the plurality of second resin side surfaces 623 to 626 is sandwiched between and connected to the second resin main surface 621 and the second resin back surface 622 in the thickness direction z. A pair of second resin side surfaces 623 and 624 are spaced apart from each other in the first direction x. A pair of second resin side surfaces 623 and 624 face opposite sides in the first direction x. The second resin side surface 623 is flush with the first resin side surface 613 and is in contact with the inner surface 741 of the case 7. The second resin side surface 624 is flush with the first resin side surface 614 and is in contact with the inner surface 742 of the case 7. A pair of second resin side surfaces 625 and 626 are spaced apart from each other in the second direction y. A pair of second resin side surfaces 625 and 626 face opposite sides in the second direction y. The second resin side surface 625 is flush with the first resin side surface 615 and is in contact with the inner surface 743 of the case 7. The second resin side surface 626 is flush with the first resin side surface 616 and is in contact with the inner surface 744 of the case 7.

[0051] In the semiconductor light-emitting device A2, the interface between the first resin portion 61 and the second resin portion 62 (the first resin main surface 611 and the second resin back surface 622) is located between the element main surface 401 and the element back surface 402 in the thickness direction z. For this reason, the first resin portion 61 covers the lower part in the thickness direction z (for example, the lower half in the thickness direction z) of each of the element side surfaces 403 to 406. Further, the second resin portion 62 covers the upper part in the thickness direction z (for example, the upper half in the thickness direction z) of each of the element side surfaces 403 to 406 and the element main surface 401.

[0052] In the semiconductor light-emitting device A2, the top portion 54 on the upper side in the thickness direction z of the wire 5 is located on the first resin portion 61 and is covered with the second resin portion 62.

[0053] Also in the semiconductor light-emitting device A2, similar to the semiconductor light-emitting device A1, since the first resin portion 61 contains a translucent resin material and light-absorbing powder, stray light can be reduced. For this reason, it becomes possible to cause the semiconductor light-emitting device A2 to emit light as a clearer point light source. In the semiconductor light-emitting device A2, part of the light emitted from the semiconductor light-emitting element 4 laterally (in the direction orthogonal to the thickness direction z) of the semiconductor light-emitting element 4 and the reflected light at the interface between the conduction support member 1 and the first resin portion 61 are reduced by the light-absorbing powder of the first resin portion 61, so that the stray light caused by these lights is reduced.

[0054] In the semiconductor light-emitting device A2, the second resin portion 62 is disposed on the first resin portion 61. The element main surface 401 of the semiconductor light-emitting element 4 is exposed from the first resin portion 61 and is covered with the second resin portion 62. According to this configuration, the light emitted upward in the thickness direction z from the semiconductor light-emitting element 4 is irradiated from the semiconductor light-emitting device A2 without much decrease in luminous intensity. That is, the semiconductor light-emitting device A2 can suppress a decrease in luminous intensity in the upward direction in the thickness direction z.

[0055] FIG. 12 shows a semiconductor light-emitting device A21 according to a first modification of the second embodiment. The semiconductor light-emitting device A21 is different from the semiconductor light-emitting device A2 in the following points. As shown in FIG. 12, the thickness of the first resin portion 61 of the semiconductor light-emitting device A21 is larger than the thickness of the first resin portion 61 of the semiconductor light-emitting device A2. On the other hand, the thickness of the second resin portion 62 of the semiconductor light-emitting device A21 is smaller than the thickness of the second resin portion 62 of the semiconductor light-emitting device A2.

[0056] In the semiconductor light-emitting device A21, the interface (the first resin main surface 611 and the second resin back surface 622) between the first resin portion 61 and the second resin portion 62 is at the same position as the element main surface 401 of the semiconductor light-emitting element 4 in the thickness direction z. For this reason, the first resin portion 61 covers all of the element side surfaces 403 to 406. Further, the second resin portion 62 covers the element main surface 401.

[0057] In the semiconductor light-emitting device A21, similar to the semiconductor light-emitting device A2, the top 54 on the upper side in the thickness direction z of the wire 5 is located on the first resin portion 61 and is covered with the second resin portion 62.

[0058] Also in the semiconductor light-emitting device A21, similar to the semiconductor light-emitting device A2, stray light can be reduced. For this reason, it becomes possible to cause the semiconductor light-emitting device A21 to emit light as a clearer point light source. In the semiconductor light-emitting device A21, since all of the element side surfaces 403 to 406 of the semiconductor light-emitting element 4 are covered with the first resin portion 61, the light emitted from the semiconductor light-emitting element 4 to the side (the direction orthogonal to the thickness direction z) of the semiconductor light-emitting element 4 can be reduced more than in the semiconductor light-emitting device A2 by the light-absorbing powder of the first resin portion 61. That is, the semiconductor light-emitting device A21 can reduce stray light more than the semiconductor light-emitting device A2. Also in the semiconductor light-emitting device A21, similar to the semiconductor light-emitting device A2, since the element main surface 401 of the semiconductor light-emitting element 4 is exposed from the first resin portion 61, a decrease in the luminous intensity in the upper direction in the thickness direction z can be suppressed.

[0059] FIG. 13 shows a semiconductor light-emitting device A22 according to a second modification of the second embodiment. The semiconductor light-emitting device A22 is different from the semiconductor light-emitting device A21 in the following points. As shown in FIG. 13, the thickness of the first resin portion 61 of the semiconductor light-emitting device A22 is larger than the thickness of the first resin portion 61 of the semiconductor light-emitting device A21. On the other hand, the thickness of the second resin portion 62 of the semiconductor light-emitting device A22 is smaller than the thickness of the second resin portion 62 of the semiconductor light-emitting device A21.

[0060] In the semiconductor light-emitting device A22, the interface (the first resin main surface 611 and the second resin back surface 622) between the first resin portion 61 and the second resin portion 62 is located above the top 54 of the wire 5 in the thickness direction z. For this reason, the first resin portion 61 covers all of the element main surface 401 and each element side surface 403 to 406. That is, all of the semiconductor light-emitting elements 4 are covered with the first resin portion 61. Note that, unlike the illustrated example, the interface between the first resin portion 61 and the second resin portion 62 may be at the same position as the top 54 in the thickness direction z.

[0061] In the semiconductor light-emitting device A22, the top 54 on the upper side in the thickness direction z of the wire 5 is covered with the first resin portion 61. That is, all of the wire 5 is covered with the first resin portion 61.

[0062] Also in the semiconductor light-emitting device A22, similar to each of the semiconductor light-emitting devices A2 and A21, stray light can be reduced. For this reason, the semiconductor light-emitting device A22 can be caused to emit light as a clearer point light source. Note that, in the semiconductor light-emitting device A22, although the element main surface 401 of the semiconductor light-emitting element 4 is covered with the first resin portion 61, since the thickness of the first resin portion 61 above the semiconductor light-emitting element 4 is smaller than that of the semiconductor light-emitting device A1, a decrease in the luminous intensity of the light irradiated above the semiconductor light-emitting device A1 in the thickness direction z can be suppressed. Further, in the semiconductor light-emitting device A22, the top 54 of the wire 5 is covered with the first resin portion 61 (all of the wire 5 is covered with the first resin portion 61). According to this configuration, since the wire 5 is made difficult to see by the first resin portion 61, the appearance of the semiconductor light-emitting device A22 can be improved.

[0063] Figures 14 and 15 show a semiconductor light-emitting device A23 according to a third modification of the second embodiment. The semiconductor light-emitting device A23 is different from each of the semiconductor light-emitting devices A2, A21, and A22 in the following points. That is, as shown in FIGS. 14 and 15, the positional relationship between the first resin portion 61 and the second resin portion 62 is different.

[0064] In the semiconductor light-emitting device A23, the first resin portion 61 is formed in a frame shape. The first resin portion 61 surrounds the second resin portion 62 in a plan view. The second resin portion 62 is disposed above the semiconductor light-emitting element 4 in the thickness direction z.

[0065] In the semiconductor light-emitting device A23, the interfaces between the first resin portion 61 and the second resin portion 62 (the second resin side surfaces 623 to 626) overlap the element side surfaces 403 to 406 in a plan view. For this reason, the first resin portion 61 covers all of the element side surfaces 403 to 406. Further, the second resin portion 62 covers the element main surface 401. Different from the illustrated example, the interfaces between the first resin portion 61 and the second resin portion 62 may be located inward of the semiconductor light-emitting element 4 from the element side surfaces 403 to 406 in a plan view.

[0066] Also in the semiconductor light-emitting device A23, similar to each of the semiconductor light-emitting devices A2, A21, and A22, stray light can be reduced. For this reason, the semiconductor light-emitting device A23 can be caused to emit light as a clearer point light source. Further, the semiconductor light-emitting device A23 can suppress a decrease in the luminous intensity of the light irradiated above in the thickness direction z, similar to each of the semiconductor light-emitting devices A2, A21, and A22.

[0067] In the first embodiment, the second embodiment, and the modifications thereof, the configuration of the conduction support member 1 is not limited to the above-described example, and may be, for example, the configuration shown in FIG. 16 or FIG. 17. FIGS. 16 and 17 each show an example in which the configuration of the conduction support member 1 is changed in the semiconductor light-emitting device A1. Note that, instead of the semiconductor light-emitting device A1, the configuration of the conduction support member 1 may be similarly changed in each of the semiconductor light-emitting devices A11, A2, A21 to A23.

[0068] The conduction support member 1 shown in Fig. 16 includes a through portion 37 instead of the side portion 33, and includes a through portion 38 instead of the side portion 34. Each of the through portions 37 and 38 penetrates the base material 2 in the thickness direction z. The through portion 37 is in contact with the main surface electrode portion 31 and the back surface electrode portion 35, respectively. Therefore, the main surface electrode portion 31 and the back surface electrode portion 35 are electrically connected through the through portion 37. The through portion 38 is in contact with the main surface electrode portion 32 and the back surface electrode portion 36, respectively. Therefore, the main surface electrode portion 32 and the back surface electrode portion 36 are electrically connected through the through portion 38.

[0069] The conduction support member 1 shown in Fig. 17 includes a first lead 11, a second lead 12, and an insulating portion 19. The first lead 11 and the second lead 12 are plate-shaped metal members. The first lead 11 and the second lead 12 are spaced apart from each other. A semiconductor light-emitting element 4 is joined to the first lead 11 via a conductive joining material 49. A wire 5 is joined to the second lead 12. The insulating portion 19 insulates the first lead 11 and the second lead 12. The material of the insulating portion 19 is not limited at all, and includes, for example, an insulating resin such as an epoxy resin.

[0070] Even with the configurations shown in Figs. 16 and 17, stray light can be reduced in the same manner as in the semiconductor light-emitting device A1.

[0071] In the first embodiment, the second embodiment, and the modified examples thereof, an example in which the case 7 is provided has been shown. However, for example, as shown in FIG. 18, the case 7 may not be provided. FIG. 18 shows an example in which the case 7 is not provided in the semiconductor light-emitting device A1. Note that, instead of the semiconductor light-emitting device A1, the case 7 may not be provided in each of the semiconductor light-emitting devices A11, A2, and A21 to A23. In the configuration shown in FIG. 18, an example in which each of the first resin side surfaces 613 and 614 of the first resin portion 61 is parallel to the thickness direction z is shown, but the first resin side surfaces 613 and 614 may be inclined with respect to the thickness direction z. In this case, for example, each of the first resin side surfaces 613 and 614 may be inclined so that the area in a plane orthogonal to the thickness direction z decreases as it goes upward in the thickness direction z. Similarly, each of the first resin side surfaces 615 and 616 of the first resin portion 61 may be parallel to the thickness direction z or may be inclined with respect to the thickness direction z.

[0072] In the first embodiment, the second embodiment, and the modified examples thereof, an example in which the semiconductor light-emitting element 4 has a vertical structure has been shown, but the semiconductor light-emitting element 4 may have a horizontal structure. In this case, since the two electrodes of the semiconductor light-emitting element 4 are respectively disposed on the element main surface 401, one of the two electrodes and the main surface electrode portion 31 are electrically connected by the first wire, and the other of the two electrodes and the main surface electrode portion 32 are electrically connected by the second wire.

[0073] The semiconductor light-emitting device according to the present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the semiconductor light-emitting device of the present disclosure can be freely designed in various ways. For example, the semiconductor light-emitting device of the present disclosure includes the embodiments related to the following supplementary notes. Supplementary Note 1. A semiconductor light-emitting element; A conductive support member that supports the semiconductor light-emitting element; A first resin portion that covers the semiconductor light-emitting element; and the first resin portion includes a light-transmissive resin material and light-absorbing powder, a semiconductor light-emitting device. Supplementary Note 2. The conductive support member has a base material and a wiring portion, The base material has a base material main surface facing one direction in the thickness direction, The semiconductor light emitting element is mounted on the base material main surface, The wiring portion is electrically connected to the semiconductor light emitting element, and the semiconductor light emitting device according to Appendix 1. Appendix 3. The base material has a base material back surface facing the side opposite to the base material main surface in the thickness direction, The wiring portion includes a back surface electrode portion formed on the base material back surface, and the semiconductor light emitting device according to Appendix 2. Appendix 4. The semiconductor light emitting element has an element main surface facing the same direction as the base material main surface in the thickness direction, and an element side surface facing one direction in a first direction orthogonal to the thickness direction, The first resin portion has a first resin main surface facing the same direction as the element main surface in the thickness direction, and a first resin side surface facing the same direction as the element side surface in the first direction, and the semiconductor light emitting device according to Appendix 2 or Appendix 3. Appendix 5. The distance along the thickness direction between the element main surface and the first resin main surface is 1% or more and 103% or less with respect to the distance along the first direction between the element side surface and the first resin side surface, and the semiconductor light emitting device according to Appendix 4. Appendix 6. The semiconductor light emitting device further includes a wire electrically connecting the semiconductor light emitting element and the wiring portion, The semiconductor light emitting element has a main surface electrode on the element main surface, The wire is bonded to the main surface electrode, and the semiconductor light emitting device according to Appendix 4 or Appendix 5. Appendix 7. The semiconductor light emitting device according to Appendix 6 further includes a second resin portion disposed on the first resin main surface. Appendix 8. One top portion of the wire on one side in the thickness direction is located on the first resin portion and is covered by the second resin portion, and the semiconductor light emitting device according to Appendix 7. Appendix 9. The first resin portion covers the element side surface, The second resin portion covers the element main surface, and the semiconductor light emitting device according to Appendix 8. Supplementary Note 10 The semiconductor light-emitting device according to any one of Supplementary Notes 7 to 9, wherein the absorbance of the first resin portion is higher than the absorbance of the second resin portion. Supplementary Note 11 The semiconductor light-emitting device according to any one of Supplementary Notes 7 to 10, wherein the second resin portion contains a translucent resin. Supplementary Note 12 Further comprising a case disposed on the main surface of the base material, The semiconductor light-emitting device according to any one of Supplementary Notes 4 to 11, wherein the case surrounds the semiconductor light-emitting element and the first resin portion when viewed in the thickness direction. Supplementary Note 13 The semiconductor light-emitting device according to Supplementary Note 12, wherein the case contains a black resin. Supplementary Note 14 The semiconductor light-emitting device according to any one of Supplementary Notes 1 to 13, wherein the transmittance of the light-absorbing powder is lower than the transmittance of carbon black with respect to the wavelength of red light or infrared light. Supplementary Note 15 The semiconductor light-emitting device according to any one of Supplementary Notes 1 to 14, wherein the light-absorbing powder is titanium black. Supplementary Note 16 The semiconductor light-emitting device according to any one of Supplementary Notes 1 to 15, wherein the content ratio of the light-absorbing powder in the first resin portion is 0.1% or more and 10% or less.

Explanation of Reference Numerals

[0074] A1, A11, A2, A21, A22, A23: Semiconductor light-emitting device 1: Conductive support member 11: First lead 12: Second lead 19: Insulating portion 2: Base material 201: Main surface of the base material 202: Back surface of the base material 203 - 206: Side surfaces of the base material 203a, 204a: Through hole portions 3: Wiring portion 31: Main surface electrode portion 311: Die Bonding Part 312: First Edge Part 313: First Connecting Part 32: Main Surface Electrode Part 321: Wire Bonding Part 322: Second Edge Part 323: Second Connecting Part 33, 34: Side Parts 35, 36: Back Surface Electrode Parts 37, 38: Through Parts 4: Semiconductor Light-Emitting Element 401: Element Main Surface 402: Element Back Surface 403~406: Element Side Surfaces 41: Main Surface Electrode 42: Back Surface Electrode 49: Conductive Bonding Material 5: Wire 51: Bonding Part 52: Bonding Part 53: Connection Part 54: Top Part 61: First Resin Part 611: First Resin Main Surface 612: First Resin Back Surface 613~616: First Resin Side Surfaces 619: Concave Part 619a: Bottom Part 619b: Wall Part 62: Second Resin Part 621: Second Resin Main Surface 622: Second Resin Back Surface 623~626: Second Resin Side Surfaces 7: Case 71: Top Surface 731~734: Outer Surfaces 741~744: Inner Surfaces

Claims

1. A semiconductor light-emitting element, a conductive support member that supports the semiconductor light-emitting element, a first resin portion that covers the semiconductor light-emitting element, and comprising, wherein the first resin portion contains a light-transmissive resin material and light-absorbing powder, a semiconductor light-emitting device.

2. The conductive support member has a base material and a wiring portion, the base material has a base material main surface facing one direction in the thickness direction, the semiconductor light-emitting element is mounted on the base material main surface, and the wiring portion is electrically connected to the semiconductor light-emitting element, The semiconductor light-emitting device according to Claim 1.

3. The base material has a base material back surface facing the side opposite to the base material main surface in the thickness direction, the wiring portion includes a back surface electrode portion formed on the base material back surface, The semiconductor light-emitting device according to Claim 2.

4. The semiconductor light-emitting element has an element main surface facing the same direction as the base material main surface in the thickness direction and an element side surface facing one direction in a first direction orthogonal to the thickness direction, the first resin portion has a first resin main surface facing the same direction as the element main surface in the thickness direction and a first resin side surface facing the same direction as the element side surface in the first direction, The semiconductor light-emitting device according to Claim 2 or Claim 3.

5. The distance along the thickness direction between the element main surface and the first resin main surface is 1% or more and 103% or less with respect to the distance along the first direction between the element side surface and the first resin side surface, The semiconductor light-emitting device according to Claim 4.

6. Further comprising a wire that electrically connects the semiconductor light-emitting element and the wiring portion, the semiconductor light-emitting element has a main surface electrode on the element main surface, and the wire is bonded to the main surface electrode, The semiconductor light-emitting device according to Claim 4 or Claim 5.

7. Further comprising a second resin portion disposed on the first resin main surface, The semiconductor light-emitting device according to Claim 6.

8. The top of one side of the wire in the thickness direction is located on the first resin portion and is covered by the second resin portion, The semiconductor light-emitting device according to Claim 7.

9. The first resin portion covers the element side surface, the second resin portion covers the element main surface, The semiconductor light-emitting device according to Claim 8.

10. The absorbance of the first resin portion is higher than the absorbance of the second resin portion, The semiconductor light-emitting device according to any one of Claims 7 to 9.

11. The second resin portion contains a light-transmissive resin, The semiconductor light-emitting device according to any one of Claims 7 to 10.

12. Further comprising a case disposed on the main surface of the substrate, The case surrounds the semiconductor light-emitting element and the first resin portion when viewed in the thickness direction, The semiconductor light-emitting device according to any one of claims 4 to 11.

13. The case contains a black resin, The semiconductor light-emitting device according to claim 12.

14. For the wavelength of red light or infrared light, the transmittance of the light-absorbing powder is lower than the transmittance of carbon black, The semiconductor light-emitting device according to any one of claims 1 to 13.

15. The light-absorbing powder is titanium black, The semiconductor light-emitting device according to any one of claims 1 to 14.

16. The content ratio of the light-absorbing powder in the first resin portion is 0.1% or more and 10% or less, The semiconductor light-emitting device according to any one of claims 1 to 15.

Images