Power conversion device

Abstract

To provide a power conversion device capable of suppressing deflection of a substrate when vibration occurs in the substrate.SOLUTION: A power conversion device includes: a semiconductor module 2 having a body part 21 held by a housing 1 and a plurality of control terminals 22 pulled out from the body part 21; a substrate 3 on which connection parts 32a and 32b in which the control terminals 22 are aligned and fixed in an almost straight line are oppositely arranged almost in parallel with an alignment direction; and a transformer 4 which is mounted in a position avoiding a virtual center line CL which is equidistant from both opposing connection parts 32a and 32b in the substrate 3 and whose center of gravity is away from a first mounting face 34a of the substrate 3 in a normal direction.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a power conversion device.

Background Art

[0002] In a conventional power conversion device, in order to avoid increasing the size of the substrate due to the necessity of mounting electronic components while avoiding a supported portion such as a through hole in the central portion of the substrate on which the electronic components constituting the electric circuit are mounted, the supported portion is provided only at the outer edge portion of the substrate (see, for example, Patent Document 1). Further, in this power conversion device, when the substrate vibrates, the displacement due to bending becomes large at the central portion where there is no supported portion, and this bending becomes larger as the electronic components to be mounted are heavier. Therefore, among the electronic components mounted on the mounting surface of the substrate, a heavy transformer is mounted closer to the outer edge than other components to suppress the bending of the substrate and improve the vibration resistance.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the above-described conventional power conversion device, a plurality of connection portions are provided linearly and in alignment on the substrate, and a control terminal group drawn from an inverter including switching elements is connected to each connection portion. In this case, when the substrate vibrates, in addition to the central portion of the substrate away from each supported portion, at a location away from each of a plurality of connection portions to which the control terminal group of the inverter is connected, that is, on a virtual center line where the distances between the opposing connection portions are equal, the displacement due to bending also becomes large. In the above-described conventional power conversion device, a transformer is disposed on the virtual center line. Generally, the transformer has a high center of gravity with respect to the mounting surface of the substrate. When a component with a high center of gravity with respect to such a mounting surface vibrates in the plane direction of the substrate, due to the inertial force generated in the component, with the component mounting portion as a fulcrum, the top of the component vibrates like a pendulum. As a result, a force is applied to the substrate in the normal direction of the mounting surface from the component mounting portion, and vibration occurs in which the substrate bends in the normal direction. In this conventional power conversion device, since a transformer with a high center of gravity with respect to the mounting surface of the substrate is mounted on the virtual center line where displacement due to bending is likely to be large, when vibrating in the plane direction of the mounting surface of the substrate, with the connection portion as a node, resonance of the substrate in which a belly is formed in the region sandwiched between the opposing connection portions is likely to occur, and since its amplitude also becomes large, the bending of the substrate is likely to become large. For this reason, when the substrate vibrates, stress related to the substrate itself or the connection portion between the control terminal group of the inverter and the substrate may increase and cause damage.

[0005] The present disclosure has been made to solve the above-described problems, and an object thereof is to obtain a power conversion device capable of suppressing bending of a substrate when vibration occurs in the substrate.

Means for Solving the Problems

[0006] The power conversion device according to the present disclosure includes a semiconductor module having a main body portion held in a housing and a plurality of control terminals drawn out from the main body portion, a substrate on which connection portions where the plurality of control terminals are aligned and fixed in a substantially straight line are arranged substantially parallel and opposing to each other in the alignment direction, a mounting component mounted at a position avoiding the virtual center line where the distances from both of the opposing connection portions on the substrate are equal, and having a center of gravity separated from the mounting surface of the substrate in the normal direction and is provided with.

Effects of the Invention

[0007] In the power conversion device of the present disclosure, connection portions in which control terminal groups drawn from semiconductor modules are aligned substantially linearly and fixed to a substrate are arranged to face each other, and mounting components whose centers of gravity are separated from the normal direction from the mounting surface of the substrate are attached to positions avoiding a virtual center line where the distances from the opposing connection portions are equal. Therefore, when vibration occurs in the substrate, resonance of the substrate that forms a node at the connection portion and a belly in the region sandwiched between the opposing connection portions is less likely to occur, and thus deflection of the substrate can be suppressed.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

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Figure 10

Modes for Carrying Out the Invention

[0009] Embodiment 1. The power conversion device 100 in Embodiment 1 is mounted on a vehicle such as an electric vehicle, a hybrid electric vehicle, or a fuel cell vehicle, and converts voltage, current, frequency (including direct current as zero frequency), etc. in the power supplied from the power source and supplies it to the motor of the vehicle. Since vibration occurs when the vehicle travels, vibration is also applied to the power conversion device 100 mounted on the vehicle. The power conversion device 100 in Embodiment 1 can suppress the deflection of the substrate generated by vibration even when placed in a vibration environment, and prevent stress related to the substrate itself or the connection portion between the control terminal group of the semiconductor module and the substrate from becoming large and causing damage. Hereinafter, an installation example of the power conversion device 100 according to Embodiment 1 will be described with reference to FIG. 1. FIG. 1 is a diagram showing an example of the installation state of the power conversion device 100 of Embodiment 1. The power conversion device 100 is mounted on the vehicle 200, and converts voltage, current, frequency (including direct current as zero frequency), etc. in the power supplied from the power source and supplies it to the motor 300 of the vehicle. The motor 300 is a three-phase motor. The power conversion device 100 is fixed to the motor 300 as an example of a vehicle power train device. Here, the vehicle power train device is a device that is mounted on a vehicle and functions to drive or brake the wheels of the vehicle. For example, a prime mover such as a motor or an engine, or a power transmission device such as a transmission or a drive shaft that transmits the power generated by the prime mover to the wheels of the vehicle, or a generator that converts the kinetic energy of the rotation of the prime mover or the wheels of the vehicle into electrical energy, or a motor generator having both functions of the above-described motor and generator.

[0010] Hereinafter, the configuration of the power conversion device 100 according to Embodiment 1 will be described with reference to FIGS. 2, 3, 4, 5, 6, and 7. FIG. 2 is a top view of the power conversion device 100 according to Embodiment 1, and FIG. 3 is a cross-sectional view showing an A-A cross section of the power conversion device 100 in FIG. 2. The power conversion device 100 includes a housing 1, a substrate 3 fastened to a boss portion 13 provided in the housing 1 by a fastening member 5, and a semiconductor module 2 having a main body portion 21 held via a cooler 12 such as a heat sink on the bottom portion 11 of the housing 1 and a plurality of control terminals 22 drawn from the main body portion 21. On the substrate 3, connection portions 32a and 32b are arranged substantially parallel and facing each other in the alignment direction, where a plurality of control terminals 22 of the semiconductor module 2 are fixed in a substantially straight line alignment.

[0011] The substrate 3 is provided with a transformer 4 as a mounted component that is mounted at a position avoiding a virtual center line CL that is equidistant from both of the opposing connection portions 32a and 32b, and whose center of gravity is separated from the mounting surface of the substrate 3 in the normal direction.

[0012] The power conversion device 100 includes three semiconductor modules 2 corresponding to each phase in order to supply power to a motor 300 that is a three-phase motor. The main body portion 21 of the semiconductor module 2 is configured such that a switching element 21a used for power conversion is encapsulated by a sealing resin by mold molding. This sealing resin is a thermosetting resin such as an epoxy resin. As the switching element 21a, for example, a semiconductor element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having three types of electrodes: gate, drain, and source, or an IGBT (Insulated Gate Bipolar Transistor) having three types of electrodes: gate, collector, and emitter is used. Then, this main body portion 21 is fixed to the cooler 12 by soldering with the bottom surface of the main body portion 21 in close contact with the cooler 12, and thereby is held on the bottom portion 11 of the housing 1.

[0013] A plurality of control terminals 22 of the semiconductor module 2 have one end electrically connected to a switching element 21a inside the main body 21 respectively, and a part of them is sealed by a sealing resin by mold molding and fixed to the main body 21. The other end side of the control terminal 22 is drawn out from two side surfaces of the main body 21 and exposed outside the main body 21. Here, "drawn out" means a state where the control terminal 22 extends from the inside to the outside of the main body 21 and the other end side is exposed outside. The control terminal 22 has a bending portion 22a at the portion exposed from the main body 21, and a tip portion formed in a pin shape at the tip portion. The bending portion 22a is formed by press working using a bending die. The thickness of the control terminal 22 is preferably configured to be 1 millimeter or less in order to suppress wear of the die during the press working of the bending portion 22a. The control terminal 22 is made of a conductive material such as copper or aluminum.

[0014] In addition, the semiconductor module 2 includes an input terminal 23 for inputting power from a power source such as a battery, and an output terminal 24 for outputting the power converted by the internal switching element 21a. One end of the input terminal 23 and the output terminal 24 is electrically connected to the switching element 21a inside the main body 21 respectively, and a part of them is sealed by a sealing resin and fixed to the main body 21. The other end sides of the input terminal 23 and the output terminal 24 are drawn out from two side surfaces of the main body 21 and exposed outside the main body 21.

[0015] The substrate 3 is formed in a plate shape by alternately laminating a plurality of insulating layers made of an insulating material such as glass epoxy or ceramic, and a plurality of wiring layers made of a conductive material such as copper. A supported portion 33 for forming a hole is provided at the outer edge portion of the substrate 3, and this supported portion 33 is held by a boss portion 13 by a fastening member 5 such as a screw. On the substrate 3, a connection portion 32a in which a plurality of through holes 31 are formed in alignment along a virtual straight line L1 on the surface of the substrate 3, and a connection portion 32b in which a plurality of through holes 31 are formed in alignment along a virtual straight line L2 parallel to the virtual straight line L1 are configured. In a state where the pin-shaped tip portions of the control terminals 22 are inserted into the through holes 31 of these connection portions 32a and 32b, soldering is performed, and the inside of the through holes 31 is filled with solder and fixed to the substrate 3, so that the control terminals 22 and the substrate 3 are fixed and the control terminals 22 and the substrate 3 are electrically connected. Further, in a plan view of the substrate 3, the region sandwiched between the connection portion 32a and the connection portion 32b does not include a supported portion such as a through hole for a screw for being fixed to the housing 1 or the semiconductor module 2.

[0016] An example of a mounting component mounted on the substrate 3, a transformer 4, has a transformer main body portion 41 and leads 42 drawn from the side surface of the transformer main body portion 41. The leads 42 are attached to the first mounting surface 34a of the substrate 3 and held by the substrate 3, and are electrically connected to the wiring layer of the substrate 3, whereby the transformer 4 is mounted on the substrate 3. Here, the "mounting surface" refers to the surface of the substrate 3 on which the transformer 4, which is a mounting component, is mounted. As shown in FIG. 2, the transformer 4 is mounted at a position avoiding the virtual center line CL within the region sandwiched between the virtual straight line L1 and the virtual straight line L2 in a top view with respect to the first mounting surface 34a. Also, the transformers 4 are arranged in a staggered pattern straddling the virtual center line CL.

[0017] The transformer 4 is a so-called high-profile component, and the height from the first mounting surface 34a to the center of gravity of the transformer 4 is higher than the height of the center of gravity of other components (not shown) mounted in the region sandwiched between the virtual straight line L1 and the virtual straight line L2.

[0018] FIG. 4 is a top view showing a circuit formed on a substrate 3 of the power conversion device 100 according to Embodiment 1. Further, FIG. 5 is a perspective view showing an attachment portion between the substrate 3 and the transformer 4 of the power conversion device 100 according to Embodiment 1. As shown in FIG. 4, the transformers 4a and 4b have lead groups 43a and 43b in which a plurality of leads 42 are aligned linearly and drawn out. The lead groups 43a and 43b of each of the transformers 4a and 4b are drawn out facing each other. The lead group 43b of the transformer 4a is drawn out from the side surface of the transformer main body 41 on the connection portion 32a side in a plan view of the substrate 3. The lead group 43b of the transformer 4b is drawn out from the side surface of the transformer main body 41 on the connection portion 32b side in a plan view of the substrate 3. Further, a circuit 35a and a circuit 35b are formed on the substrate 3. The lead groups 43a of the transformers 4a and 4b arranged in a staggered manner across the virtual center line CL are connected to the circuit 35a arranged on the virtual center line CL. Also, the lead groups 43b of the transformers 4a and 4b are respectively connected to the corresponding circuits 35b. In this way, the circuit 35a is electrically connected to the lead groups 43a of the transformers 4a and 4b, and the circuit 35b is electrically connected to the connection portion 32a and the lead group 43b of the transformer 4a, or the connection portion 32b and the lead group 43b of the transformer 4b, thereby constituting a control circuit of the substrate 3 that controls the semiconductor module 2. Three sets of the transformers 4a and 4b are arranged on the substrate 3, and are electrically connected to the corresponding semiconductor modules 2 via the circuit 35b. These six transformers 4a and 4b have the same shape and the same specifications, and are respectively arranged at positions avoiding the virtual center line CL.

[0019] As shown in FIG. 5, the lead 42 is strip-shaped with a flat cross-section in the cross-section in the drawing-out direction from the transformer main body 41, and is drawn out from the side surface of the transformer main body 41 so that the direction in which the leads 42 are aligned is wide. Further, each of the plurality of leads 42 of the transformer 4 has a lead bending portion 42b from the drawing-out position from the transformer main body 41 to the lead tip portion 42a. Further, the transformer 4 is a mounting component mounted on the substrate 3 by so-called surface mounting, and the lead tip portion 42a is fixed by soldering in a state of being in contact parallel to the first mounting surface 34a of the substrate 3.

[0020] The fixing portion 6 where the lead group 43a and the substrate 3 are fixed and the fixing portion 6 where the lead group 43b and the substrate 3 are fixed face each other on the mounting surface of the substrate 3, and the facing direction is the same as the direction in which the connection portion 32a and the connection portion 32b face each other. Further, each of the fixing portions 6 is arranged outside the transformer main body 41 in a plan view of the substrate 3. Further, the fixing portions 6 of the plurality of lead tip portions 42a of the lead groups 43a and 43b and the substrate 3 are aligned parallel to the alignment direction of the through holes 31 of the connection portions 32a and 32b, that is, L1 and L2.

[0021] FIG. 6 is a top view showing a part of the wiring layer inside the substrate 3 of the power conversion device 100 according to the first embodiment. As shown in FIG. 6, a wiring pattern 36 for electrically connecting the lead group 43b and the connection portions 32a and 32b is formed in the wiring layer inside the substrate 3. The wiring pattern 36 constitutes a part of the circuit 35b.

[0022] FIG. 7 is a top view showing the arrangement of the ground pattern 37 provided on the substrate 3 of the power conversion device 100 according to the first embodiment, and the ground pattern 37 inside the substrate 3 is indicated by a dotted line. The ground pattern 37 is composed of a metal which is a conductive material arranged inside the substrate 3, and is generally wider than other wiring patterns formed on the substrate 3. As shown in FIG. 7, the ground pattern 37 is arranged so as to overlap with the virtual center line CL in the plan view of the substrate 3, and one end is connected to the grounding portion 33a formed on the supported portion 33 and is electrically connected to the boss portion 13 so as to have the same potential as the housing 1.

[0023] Next, the operation of the power conversion device 100 configured as described above will be described. The power conversion device 100 converts the power input from a power source such as a battery via the input terminal 23 of the semiconductor module 2 by switching the switching element 21a inside the main body portion 21 of the semiconductor module 2, thereby converting the voltage, current, frequency (including direct current as zero frequency), etc., and supplies the power suitable for the motor 300 of the vehicle 200 via the output terminal 24. The three semiconductor modules 2 supply power to each phase of the motor 300 which is a three-phase motor, and one semiconductor module 2 supplies power to the corresponding one phase. The power output from each semiconductor module 2 is controlled by the drive signal output from the substrate 3 being transmitted through the control terminal 22.

[0024] Here, since vibration is generated when the vehicle 200 travels, the vibration is also applied to the power conversion device 100 mounted on the vehicle 200, and the vibration is transmitted to the substrate 3 of the power conversion device 100. Further, when the motor 300 rotates to drive the wheels of the vehicle 200, vibration corresponding to the rotation speed is generated, and the vibration is also applied to the power conversion device 100 fixed to the motor 300. When vibration in the plane direction is applied to the substrate 3, an inertial force is generated in the transformer 4, and due to forces in different directions being applied to the transformer 4 and the substrate 3, the top of the transformer main body portion 41 vibrates like a pendulum. Due to this vibration of the transformer 4, a force in the normal direction of the substrate 3 is applied to the substrate 3 from the attachment location of the lead 42 and the substrate 3, and vibration occurs in which the substrate 3 bends in the normal direction.

[0025] In the case of a mounted component mounted on the substrate 3, the higher the height from the first mounting surface 34a to the center of gravity of the mounted component, the greater the inertial force applied to the mounted component, and the greater the vibration in which the substrate 3 bends in the normal direction due to this inertial force. The transformer 4 is a so-called high-profile component, and since the center of gravity of the transformer 4 with respect to the first mounting surface 34a is high, it is easy to increase the vibration in which the substrate 3 bends in the normal direction. Also, when a mounted component is mounted on the substrate 3, it is better to be arranged at a position closer to the virtual center line CL where the distances from the opposing connection portions 32a and 32b are equal, that is, at a position away from each of the connection portions 32a and 32b, than when arranged otherwise, the vibration in which the substrate 3 bends in the normal direction becomes larger.

[0026] In the power conversion device 100 of the first embodiment, the transformer 4, which has a high center of gravity and is likely to cause large vibrations of the substrate 3, is attached at a position avoiding the virtual center line CL where the bending of the substrate 3 becomes large. Therefore, compared with the case where the transformer 4 is mounted on the virtual center line CL of the substrate 3, when vibrations occur in which the substrate 3 bends in the normal direction, the bending of the substrate 3 can be suppressed. For this reason, it is possible to increase the frequency at which resonance occurs, with the connection portions 32a and 32b as nodes and the region sandwiched between the connection portions 32a and 32b having a belly, which occurs when planar vibrations are applied to the substrate 3 and vibrations occur in the substrate 3. Also, when the resonance occurs, the amplitude of the displacement in the normal direction of the substrate 3 can be suppressed.

[0027] Also, the transformer 4 is generally relatively heavy among the mounted components mounted on the substrate 3. In the power conversion device 100 of the first embodiment, since the relatively heavy transformer 4 is attached at a position avoiding the virtual center line CL where the bending of the substrate 3 becomes large, compared with the case where the transformer 4 is mounted on the virtual center line CL of the substrate 3, when vibrations in the normal direction are applied to the substrate 3, the bending in the normal direction occurring in the substrate 3 can be suppressed.

[0028] Therefore, the frequency at which resonance occurs with nodes at the connection portions 32a and 32b that are generated on the substrate 3 when vibration is applied to the substrate 3 and with an antinode in the region sandwiched between the connection portions 32a and 32b can be increased, and also, the amplitude of the displacement in the normal direction of the substrate 3 when such resonance occurs can be suppressed.

[0029] As described above, in the power conversion device 100 of Embodiment 1, the connection portions 32a and 32b of the substrate 3 to which the control terminals 22 of the semiconductor module 2 are fixed face each other, and the transformer 4, which is a mounting component, is arranged at a position avoiding the virtual center line CL that is equidistant from both of the opposing connection portions 32a and 32b. Therefore, the frequency at which resonance occurs with nodes at the connection portions 32a and 32b that are generated on the substrate 3 when vibration is applied to the substrate 3 and with an antinode in the region sandwiched between the connection portions 32a and 32b can be increased, and also, the amplitude of the displacement in the normal direction of the substrate 3 when such resonance occurs can be suppressed.

[0030] Also, the vehicle power train device mounted on the vehicle 200 is a vibration generation source that vibrates when driving or braking the vehicle wheels. Even if the power conversion device 100 of Embodiment 1 is fixed to the vehicle power train device that is a vibration generation source, the deflection of the substrate 3 can be suppressed.

[0031] Also, in the power conversion device 100 of Embodiment 1, the transformer 4 is mounted in a region sandwiched between a virtual straight line L1 where the connection portion 32a of the substrate 3 is disposed and a virtual straight line L2 where the connection portion 32b is disposed. Compared with the case of being mounted outside the region sandwiched between the virtual straight line L1 and the virtual straight line L2, the region where the circuit 35a to which the lead group 43a is connected is disposed and the region where the circuit 35b to which the connection portions 32a, 32b and the lead group 43b are respectively connected can be made smaller, and the wiring patterns formed in the circuits 35a, 35b can be made shorter. For this reason, the substrate 3 can be miniaturized, and the controllability of the switching element 21a of the semiconductor module 2 by the substrate 3 can be improved. However, when the transformer 4, which is a heavy component among the mounted components, is mounted in the region sandwiched between the virtual straight line L1 and the virtual straight line L2, compared with the case of being mounted outside the region sandwiched between the virtual straight line L1 and the virtual straight line L2, the region sandwiched between the virtual straight line L1 and the virtual straight line L2 is likely to be more distorted, and when vibration is applied to the substrate 3, resonance occurs in the substrate 3 with the connection portion 32a and the connection portion 32b as nodes and a belly in the region sandwiched between the connection portion 32a and the connection portion 32b, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs is likely to be large. However, in the power conversion device 100 of Embodiment 1, since the distortion of the substrate 3 when vibration occurs in the substrate 3 as described above can be suppressed, miniaturization of the substrate 3 and improvement of the controllability of the switching element 21a of the semiconductor module 2 by the substrate 3 can be achieved. Here, when mounting the component with the highest center of gravity among the components mounted in the region sandwiched between the virtual straight line L1 and the virtual straight line L2 on the substrate 3 while avoiding the virtual center line CL, in the power conversion device 100 of Embodiment 1, the frequency at which resonance occurs in the substrate 3 with the connection portion 32a and the connection portion 32b as nodes and a belly in the region sandwiched between the connection portion 32a and the connection portion 32b when vibration is applied to the substrate 3 can be increased, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed most effectively.

[0032] Also, in the power conversion device 100 of Embodiment 1, even if a configuration is adopted in which no supported portion is provided in the region sandwiched between the connection portion 32a and the connection portion 32b in a plan view of the substrate 3, it is possible to suppress the bending of the substrate 3 when vibration occurs in the substrate 3 as described above. Therefore, it is possible to suppress an increase in the size or cost of the substrate 3.

[0033] Also, in the power conversion device 100 of Embodiment 1, since the fixing of the control terminal 22 to the connection portions 32a and 32b of the substrate 3 is performed by soldering, the substrate 3 can be reduced in size compared to fixing by screwing or a connector. However, in the fixing of the control terminal 22 to the substrate 3 by soldering, when vibration occurs in the substrate 3, the substrate 3 bends, and stress is applied to the soldered portions of the connection portions 32a and 32b, which may cause the solder to peel off. However, in the power conversion device 100 of Embodiment 1, since the bending of the substrate 3 when vibration occurs in the substrate 3 can be suppressed as described above, it is possible to suppress the peeling of the solder at the connection portions 32a and 32b when vibration occurs in the substrate 3. Furthermore, in the power conversion device 100 of Embodiment 1, since the through holes 31 of the connection portions 32a and 32b of the substrate 3 are aligned along the straight lines L1 and L2, the process of fixing the control terminal 22 to the through holes 31 can be performed by drag soldering. For this reason, since the process of fixing a plurality of control terminals 22 to the through holes 31 can be performed at once, the working time can be shortened compared to the case where the through holes 31 of the connection portions 32a and 32b are not aligned linearly.

[0034] Also, in the power conversion device 100 of Embodiment 1, in a plan view of the substrate 3, in the region sandwiched between the connection portion 32a and the connection portion 32b, there are no supported portions such as screw through-holes for fixing to the housing 1 or the semiconductor module 2. Therefore, since the circuits 35a and 35b can be efficiently formed in the region sandwiched between the connection portion 32a and the connection portion 32b of the substrate 3, the substrate 3 can be miniaturized. However, when the supported portion is not provided in the region sandwiched between the connection portion 32a and the connection portion 32b in a plan view of the substrate 3 in this way, the region sandwiched between the connection portion 32a and the connection portion 32b is likely to have a large deflection. However, in the power conversion device 100 of Embodiment 1, since the deflection of the substrate 3 when vibration occurs in the substrate 3 as described above can be suppressed, even when the supported portion is not provided in the region sandwiched between the connection portion 32a and the connection portion 32b in a plan view of the substrate 3, when vibration is applied to the substrate 3 and resonance occurs in the substrate 3, with the connection portion 32a and the connection portion 32b as nodes and a belly in the region sandwiched between the connection portion 32a and the connection portion 32b, the frequency at which the resonance occurs can be increased, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed.

[0035] Also, in the power conversion device 100 of Embodiment 1, since the control terminal 22 has a bent portion 22a at a portion exposed from the main body portion 21, when the substrate 3 is deflected, the bent portion 22a of the control terminal 22 is elastically deformed, thereby suppressing the stress generated in the control terminal 22 and preventing the control terminal 22 from being damaged.

[0036] In addition, in the power conversion device 100 of Embodiment 1, the control terminal 22 is integrated with the switching element 21a of the main body 21 by a sealing resin through mold molding. When manufacturing the semiconductor module 2 by mold molding, compared with a case-type semiconductor module in which a switching element, an input terminal, an output terminal, and a control terminal are arranged in a resin case and the case is filled with a resin material for manufacturing, the manufacturing process can be shortened, and the cost during mass production can be suppressed. However, the semiconductor module 2 manufactured by mold molding requires a mold for molding. When changing the shape such as changing the shape or arrangement of the control terminal 22 compared with the above case-type semiconductor module, remaking the mold is necessary, resulting in an increase in cost. Therefore, compared with a case-type semiconductor module manufactured by filling a resin material into a case, it is difficult to change the shape or arrangement of the control terminal 22 in order to ensure the strength of the substrate 3 or the control terminal 22 along with a change in the specifications of the substrate 3 for the semiconductor module 2. However, in the power conversion device 100 of Embodiment 1, since the deflection of the substrate 3 when vibration occurs in the substrate 3 can be suppressed as described above, it is possible to manufacture the semiconductor module 2 by mold molding, preventing the need to change the shape or arrangement of the control terminal 22 to ensure the strength of the substrate 3 or the control terminal 22, shortening the manufacturing process, and suppressing the cost during mass production.

[0037] In addition, the sealing resin of the main body 21 of the semiconductor module 2 is a thermosetting resin such as an epoxy resin. Thermosetting resins have higher mechanical strength compared to thermoplastic resins. Therefore, the switching element 21a and the control terminal 22 of the semiconductor module 2 can be integrated more firmly. However, since thermosetting resins are inferior in impact resistance compared to thermoplastic resins, when vibration occurs in the substrate 3 and the impact propagates through the control terminal 22 to the sealing resin of the main body 21, cracks are likely to occur in the sealing resin. However, in the configuration of Embodiment 1, resonance is less likely to occur when vibration is applied to the substrate 3, so the impact applied to the sealing resin of the main body 21 through the control terminal 22 can be suppressed, preventing cracks from occurring in the sealing resin of the main body 21.

[0038] Furthermore, in the power conversion device 100 according to the first embodiment, the transformer 4 is mounted on the first mounting surface 34a of the substrate 3 on the side opposite to the surface facing the main body portion 21 of the semiconductor module 2. Therefore, the length of the control terminal 22 of the semiconductor module 2 can be shortened to increase the rigidity of the control terminal 22, and the stress generated in the control terminal 22 when the substrate 3 is deformed can be suppressed.

[0039] Also, in the power conversion device 100 according to the first embodiment, the transformers 4 are arranged in a staggered manner with the virtual center line CL interposed therebetween. Therefore, in the region sandwiched between the connection portions 32a and 32b of the substrate 3, the locations where the weight of the transformer 4, which is a mounted component, is applied can be dispersed, and thus the deflection in the normal direction of the substrate 3 can be suppressed. Also, in the power conversion device 100 according to the first embodiment, the lead group 43b of the transformer 4a is drawn out from the connection portion 32a side of the transformer main body portion 41 in a plan view of the substrate 3, and the lead group 43b of the transformer 4b is drawn out from the connection portion 32b side of the transformer main body portion 41 in a plan view of the substrate 3. Therefore, compared with the case where the lead group 43b is drawn out from the other side of the transformer main body portion 41, the wiring pattern 36 for electrically connecting the lead group 43b of the transformer 4 and the connection portions 32a and 32b can be shortened, and thus the controllability of the switching element 21a of the semiconductor module 2 by the substrate 3 can be improved. Furthermore, in the power conversion device 100 according to the first embodiment, the leads 42 of the lead group 43b and the plurality of fixing portions 6 of the substrate 3 are aligned parallel to the alignment direction of the through holes 31 of the connection portions 32a and 32b. Therefore, compared with the case where the lead group 43b of the transformer 4 and the fixing portion 6 of the substrate 3 are not aligned parallel to the alignment direction of the through holes 31 of the connection portion 32b, the respective lengths of the wiring pattern 36 for electrically connecting the lead group 43b of the transformer 4 and the connection portion 32b can be made more uniform, and the controllability of the switching element 21a of the semiconductor module 2 by the substrate 3 can be improved. Furthermore, in the power conversion device 100 of Embodiment 1, the facing directions of the opposing lead groups 43a and 43b of the transformer 4, which is a mounted component, are the same as the facing directions of the connection portions 32a and 32b of the substrate 3. Therefore, for example, when the facing directions of the opposing lead groups 43a and 43b of the transformer 4 are perpendicular to the facing directions of the connection portions 32a and 32b of the substrate 3, the circuits 35a and 35b can be miniaturized as compared to the case where the facing directions do not match.

[0040] Also, in the power conversion device 100 of Embodiment 1, the transformer 4 has lead groups 43a and 43b that face each other and are drawn out from the transformer main body portion 41, and are respectively fixed to the substrate 3. Therefore, the transformer 4 is less likely to fall over in the facing direction of the lead groups 43a and 43b than in other directions. When vibration occurs in the substrate 3 and the substrate 3 bends, the displacement in the normal direction of the substrate 3 tends to increase significantly on the virtual center line CL that is equidistant from both of the connection portions 32a and 32b held by the semiconductor module 2, and the displacement in the normal direction of the substrate 3 is different between the virtual straight lines L1 and L2 and the virtual center line CL. When such vibrations with different displacements in the normal direction occur, a vibration that causes the transformer 4 to fall over in the facing direction of the connection portions 32a and 32b occurs in the transformer 4 disposed between the virtual center line CL and the virtual straight line L1 or the virtual straight line L2. Due to this fall of the transformer 4, stress may be generated in the solder that fixes the transformer 4 or the lead tip portion 42a to the substrate 3, resulting in damage. However, in the power conversion device 100 of Embodiment 1, since the facing direction of the lead groups 43a and 43b of the transformer 4 is the same as the facing direction of the connection portions 32a and 32b of the substrate 3, the transformer 4 is less likely to fall over even when a deflection occurs in which the displacement in the normal direction of the substrate 3 is different between the virtual straight lines L1 and L2 and the virtual center line CL, as compared to the case where the facing direction of the lead groups 43a and 43b does not match the facing direction of the connection portions 32a and 32b of the substrate 3. Therefore, it is possible to suppress the stress generated in the solder that fixes the transformer 4 or the lead tip portion 42a to the substrate 3 when vibration occurs in the substrate 3, thereby preventing damage.

[0041] Further, the transformer 4 is a component mounted on the substrate 3 by so-called surface mounting. The lead tip 42a is fixed by soldering in a state of being in contact parallel to the first mounting surface 34a of the substrate 3, and the fixing portion 6 to be soldered is disposed outside the transformer main body 41 in a plan view of the substrate 3. Therefore, in a plan view of the substrate 3, compared with the case where the fixing portion 6 is inside the transformer main body 41, the distance between the fixing portions 6 of the opposing lead groups 43a and 43b becomes larger, so the transformer 4 is less likely to fall over. Also, since the lead tip 42a and the fixing portion 6 of the substrate 3 are disposed outside the transformer main body 41 in a plan view of the substrate 3, a soldering tool or jig can be applied from above the mounting surface in the soldering process, so the soldering process can be easily carried out.

[0042] Furthermore, in the power conversion device 100 of the first embodiment, the lead 42 of the transformer 4 has a lead bending portion 42b. Therefore, when vibration occurs in the substrate 3 and the transformer 4 vibrates, the lead bending portion 42b elastically deforms, thereby suppressing the stress applied to the solder fixing the lead tip 42a and the substrate 3 and preventing the solder from peeling off.

[0043] Also, in the power conversion device 100 of the first embodiment, a ground pattern 37 is disposed on the virtual center line CL of the substrate 3. The ground pattern 37 is generally wider than other wiring patterns of the substrate 3. By disposing the wide ground pattern 37 composed of a wide metal on the virtual center line CL, the bending rigidity of the region sandwiched between the virtual straight line L1 and the virtual straight line L2 of the substrate 3 is improved, so that the bending of the substrate 3 due to the weight of the components mounted in the region sandwiched between the virtual straight line L1 and the virtual straight line L2 of the substrate 3 can be suppressed.

[0044] Embodiment 2. In Embodiment 1, although the transformer 4 as a mounting component was described as being mounted on the first mounting surface 34a on the side opposite to the surface facing the main body portion 21 of the semiconductor module 2 of the substrate 3, the transformer 4 as a mounting component may be mounted on the second mounting surface 34b facing the main body portion 21 of the semiconductor module 2 of the substrate 3. FIG. 8 is a cross-sectional view of the power conversion device 100 in Embodiment 2. In the figure, the transformer 4 as a mounting component is the second mounting surface 34b facing the main body portion 21 of the semiconductor module 2 of the substrate 3, and is mounted at a position avoiding the virtual center line CL.

[0045] Also in this case, similar to Embodiment 1, the frequency of resonance that occurs in the substrate 3 when vibration is applied to the substrate 3, with the connection portions 32a and 32b as nodes and having a belly in the region sandwiched between the connection portions 32a and 32b, can be increased, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed. Furthermore, in the power conversion device 100 of Embodiment 2, the transformer 4 is mounted on the second mounting surface 34b of the substrate 3 facing the main body portion 21 of the semiconductor module 2. In this case, since the transformer 4, which is a tall component, is arranged in the space between the main body portion 21 of the semiconductor module 2 and the substrate 3, the height including from the main body portion 21 of the semiconductor module 2 to the substrate 3 and the transformer 4 as a mounting component can be suppressed, and the power conversion device 100 can be miniaturized.

[0046] Embodiment 3. In Embodiment 1, the control terminals 22 drawn out from the main body portion 21 of one semiconductor module 2 are fixed to the opposing connection portions 32a and 32b of the substrate 3, respectively, but the control terminals 22 of different semiconductor modules 2 may be fixed to the connection portion 32a and the connection portion 32b. FIG. 9 is a top view of the power conversion device 100 in Embodiment 3. In the figure, the control terminal 22 of the semiconductor module 2a is fixed to the connection portion 32a of the substrate 3, and the control terminal 22 of the semiconductor module 2b is fixed to the connection portion 32b.

[0047] Also in this case, similar to the first embodiment, the frequency at which resonance occurs with the connection portion 32a and the connection portion 32b as nodes and a belly in the region sandwiched between the connection portion 32a and the connection portion 32b, which is generated in the substrate 3 when vibration is applied to the substrate 3, can be increased, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed.

[0048] Fourth Embodiment. FIG. 11 is a top view of the power conversion device 100 in the fourth embodiment. In this power conversion device 100, the control terminal 22b and the control terminal 22c are drawn out from the main body portion 21 of the semiconductor module 2. One end of the control terminal 22b is electrically connected to the switching element 21a inside the main body portion 21 respectively, and the other end is fixed to the through hole 31b to hold the substrate 3, and electrically connect the substrate 3 and the switching element 21a. On the other hand, the control terminal 22c is a dummy terminal. One end is electrically insulated from the switching element 21a inside the main body portion 21 respectively, and a part of it is sealed by the sealing resin and fixed to the main body portion 21, and it does not contribute to the electrical operation of the power conversion device 100. One end of the control terminal 22b is electrically connected to the switching element 21a inside the main body portion 21 respectively, and the other end is fixed to the through hole 31c to hold the substrate 3. The control terminal 22b and the control terminal 22c have the same shape of the exposed portion from the main body portion 21.

[0049] In the power conversion device 100 of the fourth embodiment, the power output from the semiconductor module 2 supplied to the motor 300 is controlled by the drive signal output from the substrate 3 being transmitted through the control terminal 22b. However, since the control terminal 22c is a dummy terminal and is insulated from the switching element 21a, the drive signal output from the substrate 3 is not transmitted to the semiconductor module 2 through the control terminal 22c.

[0050] Also in this case, similar to the first embodiment, the frequency at which resonance occurs with the connection portion 32a and the connection portion 32b as nodes and a belly in the region sandwiched between the connection portion 32a and the connection portion 32b, which is generated in the substrate 3 when vibration is applied to the substrate 3, can be increased, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed.

[0051] Furthermore, in the power conversion device 100 of the fourth embodiment, since the substrate 3 is held by the control terminal 22c to the semiconductor module 2, the fixing strength of the substrate 3 to the semiconductor module 2 can be improved compared to the case where the control terminal 22c is not provided. Also, since the control terminal 22c is fixed by soldering to the through holes 31c of the connection portions 32a and 32b, the fixing process can be performed by drag soldering simultaneously with the process of soldering to the through hole 31b of the substrate 3 of the control terminal 22b. For example, compared to the method of improving the fixing strength of the substrate 3 to the semiconductor module 2 by providing a boss for supporting the substrate 3 on the main body portion 21 of the semiconductor module 2, the working time can be shortened. Also, since the control terminal 22c is fixed to the through holes 31c of the connection portions 32a and 32b, the fixing strength of the substrate 3 to the semiconductor module 2 can be improved while suppressing an increase in the size of the substrate 3 compared to, for example, a method of providing a boss for supporting the substrate 3 on the main body portion 21 of the semiconductor module 2.

[0052] Note that, as a modification of the fourth embodiment, a part of the control terminal 22c may be sealed with a sealing resin and fixed to the main body portion 21 while being electrically connected to the switching element 21a inside the main body portion 21, and the through hole 31c through which the control terminal 22c is fixed to the substrate 3 may be electrically insulated from the circuits 35a and 35b of the substrate 3. Alternatively, a part of the control terminal 22c may be sealed with a sealing resin and fixed to the main body portion 21 while being electrically insulated from the switching element 21a inside the main body portion 21, and the through hole 31c through which the control terminal 22c is fixed to the substrate 3 may be electrically insulated from the circuits 35a and 35b of the substrate 3.

[0053] Even in the power conversion device 100 according to the modified example of the fourth embodiment, similar to the power conversion device 100 of the fourth embodiment, when vibration is applied to the substrate 3 and resonance occurs in the substrate 3 with the connection portion 32a and the connection portion 32b as nodes and having a belly in the region sandwiched between the connection portion 32a and the connection portion 32b, the frequency at which the resonance occurs can be increased, and the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed. In addition, it is possible to improve the fixing strength of the semiconductor module 2 to the substrate 3 while suppressing the working time required for manufacturing or suppressing an increase in the size of the substrate 3.

[0054] In the above embodiments, although the transformer 4 is arranged at a position avoiding the virtual center line CL of the substrate 3 as a mounting component, as a mounting component, an electrolytic capacitor may be arranged at a position avoiding the virtual center line CL of the substrate 3. Generally, for an electrolytic capacitor, leads are drawn out from the bottom surface of a columnar electrolytic capacitor main body, and by fixing the leads to the substrate 3, the electrolytic capacitor main body is mounted on the substrate 3 in a state where the bottom surface of the electrolytic capacitor main body faces the surface of the substrate 3. Generally, compared with other capacitors such as ceramic capacitors, for an electrolytic capacitor, the area of the substrate 3 required for mounting with respect to the capacitance is small, and the substrate 3 can be miniaturized. However, an electrolytic capacitor is a so-called high-profile component, and generally, the height from the mounting surface of the substrate 3 to the center of gravity is higher than that of other capacitors such as ceramic capacitors. For this reason, when vibration occurs in the plane direction of the substrate 3, the bending of the substrate 3 caused by the vibration of the top of the electrolytic capacitor main body swinging like a pendulum due to the inertial force applied to the electrolytic capacitor main body is likely to increase. Also, for an electrolytic capacitor having the same capacitance, as the rated voltage increases, the height of the electrolytic capacitor main body becomes higher, so the height of the center of gravity with respect to the mounting surface of the substrate 3 also becomes higher. For this reason, when trying to adopt an electrolytic capacitor with a higher rated voltage and increase the voltage applied to the power conversion device, the bending of the substrate 3 that occurs when vibration occurs in the plane direction of the substrate 3 becomes larger.

[0055] Thus, even when an electrolytic capacitor is mounted on the substrate 3 as a mounted component, since the electrolytic capacitor is mounted at a position avoiding the virtual center line CL, similar to the first embodiment, when vibration is applied to the substrate 3 and vibration occurs in the substrate 3, with the connection portion 32a and the connection portion 32b as nodes, the frequency at which resonance occurs with a belly in the region sandwiched between the connection portion 32a and the connection portion 32b can be increased, and also, the amplitude of the displacement in the normal direction of the substrate 3 when the resonance occurs can be suppressed.

[0056] In all of the above embodiments, it has been described that the semiconductor module 2 is held at the bottom 11 of the housing 1 by being soldered and fixed to the cooler 12 in a state where the bottom surface of the main body portion 21 is in close contact with the cooler 12. However, as long as the semiconductor module 2 is held by the housing 1, the holding method is not limited to this. For example, the semiconductor module 2 may be pressed downward by a spring member and held by the housing 1 by pressing the bottom surface against the cooler 12.

[0057] Also, in all of the above embodiments, it has been described that the control terminal 22 is made of copper or aluminum. However, as long as the control terminal 22 is fixed to the connection portions 32a and 32b of the substrate 3 and the control terminal 22 electrically connects the substrate 3 and the switching element 21a of the semiconductor module 2 and supports the substrate 3, the control terminal 22 may be made of an alloy containing at least one of copper or aluminum.

[0058] In all of the above embodiments, a power conversion device fixed to a motor as an example of a vehicle power train device mounted on a vehicle has been described. However, not limited to the vehicle power train device, by being fixed to a component of the vehicle where vibration occurs, when vibration occurs in the substrate, resonance of the substrate with nodes at the connection portions and a belly formed in the region sandwiched between the opposing connection portions is less likely to occur, and thus the effect of suppressing the deflection of the substrate can be achieved.

[0059] In all of the above embodiments, the power conversion device mounted on the vehicle has been described. However, the power conversion device of the present disclosure is not limited to being mounted on a vehicle. By being used in an environment where vibration occurs, when vibration occurs on the substrate, the connection portion is used as a node, and resonance of the substrate that forms a belly in the region sandwiched between the opposing connection portions is less likely to occur, so that the bending of the substrate can be suppressed.

[0060] Note that appropriately combining, modifying, or omitting each embodiment is also included in the scope of the technical idea disclosed in the embodiment.

[0061] Hereinafter, various aspects of the present disclosure will be collectively described as appendices. (Appendix 1) A semiconductor module having a main body portion held in a housing and a plurality of control terminals drawn out from the main body portion, A substrate on which connection portions where a plurality of the control terminals are aligned and fixed in a substantially straight line are arranged substantially parallel and facing each other in the alignment direction, A mounting component mounted at a position avoiding a virtual center line on the substrate where the distances from both of the opposing connection portions are equal, and whose center of gravity is separated from the mounting surface of the substrate in the normal direction, A power conversion device comprising: (Appendix 2) In a plan view of the substrate, the mounting component passes over one of the opposing connection portions and extends along the alignment direction of the connection portions, and passes over the other of the opposing connection portions and extends along the alignment direction of the connection portions, and is mounted in a region sandwiched between a first line and a second line, The power conversion device according to Appendix 1. (Appendix 3) Among the components mounted in the region sandwiched between the first line and the second line, the mounting component has the highest height of the center of gravity with respect to the mounting surface. The power conversion device according to Appendix 2. (Appendix 4) The mounting component has a mounting component main body portion and leads drawn out from the mounting component main body portion. By fixing the tip of the lead to the substrate, the mounting component is mounted on the substrate. The lead is drawn out from the connection portion side of the mounting component body portion. The power conversion device according to any one of Appendices 1 to 3. (Appendix 5) The mounting component has a mounting component body portion and a plurality of leads drawn out from the mounting component body portion. By fixing the tips of the plurality of leads to the substrate, the mounting component is mounted on the substrate. The fixing portions between the tips of the plurality of leads and the substrate are aligned in a substantially straight line substantially parallel to the connection portion on the substrate. The power conversion device according to any one of Appendices 1 to 4. (Appendix 6) The mounting component has a mounting component body portion and a plurality of leads drawn out from the mounting component body portion. The plurality of leads are drawn out from the mounting component body portion in opposite directions. By fixing the tips of the plurality of leads to the mounting surface of the substrate, the mounting component is mounted on the substrate. The direction in which the leads face is the same as the direction in which the connection portions face. The power conversion device according to Appendix 2. (Appendix 7) Each of the fixing portions between the tips of the leads and the substrate is disposed outside the mounting component body portion in a plan view of the substrate. The power conversion device according to Appendix 6. (Appendix 8) The lead has at least one lead bending portion in a region from the portion exposed from the mounting component body portion to the tip portion fixed to the substrate from the mounting component body portion. The power conversion device according to Appendix 6 or 7. (Appendix 9) The substrate has a supported portion supported by the housing. The supported portion is configured at a position avoiding the region sandwiched by the connection portion of the substrate. The power conversion device according to any one of Appendices 1 to 8. (Appendix 10) The control terminal is fixed to the substrate by soldering the tip of the control terminal to the substrate. The power conversion device according to any one of Appendices 1 to 9. (Appendix 11) The connection portion is configured by a plurality of through holes provided in the substrate being aligned linearly. The tip of the control terminal is fixed to the substrate by being soldered in a state of being inserted into the through hole. The power conversion device according to Appendix 10. (Appendix 12) The bottom surface of the semiconductor module is held by the housing. The control terminal has at least one bending portion in a region from a portion exposed from the main body portion to a portion fixed from the main body portion to the connection portion. The power conversion device according to any one of Appendices 1 to 11. (Appendix 13) The bending portion is formed by press working. The control terminal has a thickness in the press direction of the bending portion of 1 millimeter or less. The power conversion device according to Appendix 12. (Appendix 14) The mounting component is mounted on a surface of the substrate facing the main body portion of the semiconductor module. The power conversion device according to any one of Appendices 1 to 13. (Appendix 15) The mounting component is mounted on a surface of the substrate opposite to the surface facing the main body portion of the semiconductor module. The power conversion device according to any one of Appendices 1 to 13. (Appendix 16) A plurality of the mounting components are mounted on the substrate in a staggered manner with respect to the virtual center line. The power conversion device according to any one of Appendices 1 to 15. (Appendix 17) The substrate has a ground pattern at the same potential as the housing. The ground pattern is arranged on the virtual center line in a plan view of the substrate. The power conversion device according to any one of Appendices 1 to 16. (Appendix 18) The semiconductor module is configured by encapsulating a part of the control terminals and the switching element with a sealing resin by mold molding. The power conversion device according to any one of Appendices 1 to 18. (Appendix 19) A circuit is configured on the substrate. A plurality of the control terminals include dummy terminals. The power conversion device according to Appendix 18. (Appendix 20) The mounted component is a transformer. The power conversion device according to any one of Appendices 1 to 19. (Appendix 21) The mounted component is an electrolytic capacitor. The power conversion device according to any one of Appendices 1 to 19. (Appendix 22) Mounted on a vehicle. The power conversion device according to any one of Appendices 1 to 21. (Appendix 23) Fixed to a vehicle power train device mounted on the vehicle. The power conversion device according to Appendix 22.

Explanation of Signs

[0062] 100 Power conversion device 200 Vehicle 300 Motor 1 Housing 11 Bottom 12 Cooler 13 Boss part 2 Semiconductor module 21 Main body part 21a Switching element 22 Control terminal 22a Bending section 23 Input terminal 24 Output terminal 3 Substrate 31 Through hole 32a, 32b Connection parts 35a, 35b Circuits 36 Wiring pattern 37 Ground pattern 4 Transformer 41 Transformer main body part 42 Lead 5 Fastening member L1, L2 Virtual straight lines CL Virtual center line

Claims

1. A power conversion device comprising: a semiconductor module having a main body held in a housing and a plurality of control terminals drawn out from the main body; a substrate on which connection portions, where the plurality of control terminals are aligned and fixed in a substantially straight line, are arranged substantially parallel to and facing each other in the alignment direction; and a mounting component mounted at a position avoiding a virtual center line on the substrate where the distances from both of the opposing connection portions are equal, and having a center of gravity away from the normal direction from the mounting surface of the substrate.

2. The power conversion device according to claim 1, wherein the mounting component is mounted in a region sandwiched between a first line passing over one of the opposing connection portions and extending along the alignment direction of the connection portions and a second line passing over the other of the opposing connection portions and extending along the alignment direction of the connection portions in a plan view of the substrate.

3. The power conversion device according to claim 2, wherein the mounting component has the highest height of the center of gravity with respect to the mounting surface among the components mounted in the region sandwiched between the first line and the second line.

4. The mounting component has a mounting component main body portion and leads drawn out from the mounting component main body portion, and the mounting component is mounted on the substrate by fixing the tip ends of the leads to the substrate, wherein the leads are drawn out from the connection portion side of the mounting component main body portion. The power conversion device according to claim 1 or 2.

5. The mounting component has a mounting component main body portion and a plurality of leads drawn out from the mounting component main body portion, and the mounting component is mounted on the substrate by fixing the tip ends of the plurality of leads to the substrate, wherein the fixing portions of the tip ends of the plurality of leads and the substrate are aligned in a substantially straight line substantially parallel to the connection portion on the substrate. The power conversion device according to claim 1 or 2.

6. The mounting component has a mounting component main body portion and a plurality of leads drawn from the mounting component main body portion, The plurality of leads are drawn out from the mounting component main body portion so as to face each other, The mounting component is mounted on the substrate by fixing the tip portions of the plurality of leads to the mounting surface of the substrate, The direction in which the leads face is the same as the direction in which the connection portions face. The power conversion device according to claim 2.

7. The fixing portions between the tip portions of the leads and the substrate are each disposed outside the mounting component main body portion in a plan view of the substrate. The power conversion device according to claim 6.

8. The lead has at least one lead bending portion in a region from the portion of the lead exposed from the mounting component main body portion to the tip portion fixed to the substrate from the mounting component main body portion. The power conversion device according to claim 6.

9. The substrate has a supported portion supported by the housing, The supported portion is configured at a position avoiding the region sandwiched by the connection portions of the substrate. The power conversion device according to claim 1 or 2.

10. The control terminal is fixed to the substrate by soldering the tip portion of the control terminal to the substrate. The power conversion device according to claim 1 or 2.

11. The connection portion is configured by a plurality of through holes provided in the substrate being aligned linearly, The tip portion of the control terminal is fixed to the substrate by being soldered in a state of being inserted into the through hole. The power conversion device according to claim 10.

12. The bottom surface of the semiconductor module is held by the housing, The control terminal has at least one bending portion in a region from a portion of the control terminal exposed from the main body portion to a portion fixed from the main body portion to the connection portion. The power conversion device according to claim 1 or 2.

13. The bending portion is formed by pressing, The control terminal has a thickness in the pressing direction of the bending portion of 1 millimeter or less. The power conversion device according to claim 12.

14. The mounted component is mounted on a surface of the substrate facing the main body portion of the semiconductor module. The power conversion device according to claim 1 or 2.

15. The mounted component is mounted on a surface of the substrate opposite to the surface facing the main body portion of the semiconductor module. The power conversion device according to claim 1 or 2.

16. A plurality of the mounted components are mounted on the substrate in a staggered manner with the virtual center line interposed therebetween. The power conversion device according to claim 1 or 2.

17. The substrate has a ground pattern at the same potential as the housing, The ground pattern is disposed on the virtual center line in a plan view of the substrate. The power conversion device according to claim 1 or 2.

18. The semiconductor module is configured by encapsulating a part of the control terminal and a switching element with a sealing resin by mold molding. The power conversion device according to claim 1 or 2.

19. A circuit is configured on the substrate, A plurality of the control terminals include dummy terminals. The power conversion device according to claim 18.

20. The mounting component is a transformer. The power conversion device according to claim 1 or 2.

21. The mounting component is an electrolytic capacitor. The power conversion device according to claim 1 or 2.

22. Mounted on a vehicle The power conversion device according to claim 1 or 2.

23. Fixed to the vehicle power train device mounted on the vehicle The power conversion device according to claim 22.

Images