In-situ semiconductor processing chamber temperature apparatus

Abstract

To provide a temperature-sensing disc, a system including a control system, and a method for monitoring a temperature of a processing chamber.SOLUTION: A showerhead assembly 400 comprises a gas distribution faceplate 450. The gas distribution plate includes a plurality of through-holes for delivering process gases to a processing chamber. The gas distribution plate is divided into a plurality of temperature-control regions. The showerhead assembly further comprises a chill plate 420 positioned above an electrode for providing temperature control and a plurality of heat control devices 460a to 460e to manage heat transfer within the showerhead assembly. The heat control device comprises thermoelectric modules 464a to 464e and heat pipe assemblies 466a to 466e coupled with the thermoelectric modules. Each of the plurality of heat control devices is associated with a temperature control region and provides independent temperature control to its associated temperature control region.SELECTED DRAWING: Figure 4

Description

Background

[0001] (Field) The embodiments described in this specification generally relate to semiconductor processing, and more specifically, to apparatuses and methods for in-situ temperature measurement inside a semiconductor processing chamber.

[0002] (Description of Related Art) Semiconductor devices are typically manufactured by a series of processes in which layers are deposited on the surface of a substrate and the deposited materials are etched into a desired pattern. As the feature sizes of semiconductor devices shrink, precise process control during these processes becomes increasingly important.

[0003] Temperature control is particularly important in chambers such as etching chambers for semiconductor processing to achieve high-yield, high-throughput, and reproducible semiconductor manufacturing. The process window of precise manufacturing techniques is small, and even a slight deviation from the acceptable process control tolerance can lead to catastrophic amounts of production defects. For example, if the temperature of the showerhead assembly, chuck surface, or chamber sidewall is too low, there is a high risk of polymer deposition on these cold spots, which can cause the sidewall profile of the etching to change detrimentally. For example, if the temperature of the showerhead assembly is too high, there is a high risk of the film on the faceplate of the showerhead assembly cracking or peeling off, which can cause defects on the substrate. Additionally, temperature drifts of the chamber processing surfaces, including the gas distribution assembly, chamber sidewalls, and chuck surface, will also detrimentally change the processing results from substrate to substrate.

[0004] Therefore, there is a need for improvement in methods and apparatuses for monitoring the temperature of the chamber surface and internal chamber components within a semiconductor processing chamber. Summary

[0005] The embodiments described in this specification generally relate to semiconductor processing, and more specifically, to an apparatus and method for in-situ temperature measurement inside a semiconductor processing chamber. In one embodiment, a showerhead assembly is provided. The showerhead assembly includes a first electrode having a plurality of apertures therethrough and a gas distribution faceplate attached to a first lower main surface of the first electrode. The gas distribution plate includes a plurality of through-holes for supplying a process gas to the processing chamber. The gas distribution plate is divided into a plurality of temperature control regions. The showerhead assembly further includes a chill plate disposed above the first electrode to provide temperature control and a plurality of thermal control devices for managing heat transfer within the showerhead assembly. The thermal control devices include a thermoelectric module and a heat pipe assembly coupled to the thermoelectric module. Each of the plurality of thermal control devices is associated with a temperature control region and provides independent temperature control for its associated temperature control region.

[0006] In another embodiment, a temperature measurement disk is provided. The temperature measurement disk includes a disk-shaped body. The disk-shaped body has a diameter of 300 millimeters, a front surface, and a back surface opposite the front surface. The temperature measurement disk further includes one or more cameras disposed on at least one of the front surface and the back surface. Here, the one or more cameras are configured to perform infrared-based imaging.

[0007] In yet another embodiment, a processing chamber is provided. The processing chamber includes a chamber body having an upper wall, side walls, and a bottom wall that define a processing volume. The processing chamber further includes a substrate support assembly disposed within the processing volume and a showerhead assembly disposed opposite the substrate support. The showerhead assembly includes a first electrode having a plurality of through openings and a gas distribution faceplate attached to a first lower main surface of the first electrode. The gas distribution plate includes a plurality of through holes for supplying a processing gas to the processing chamber. The gas distribution plate is divided into a plurality of temperature control regions. The showerhead assembly further includes a chill plate disposed above the metal electrode to provide temperature control and a plurality of thermal control devices for managing heat transfer within the showerhead assembly. Each of the plurality of thermal control devices includes a thermoelectric module and a heat pipe assembly coupled to the thermoelectric module, and each of the plurality of thermal control devices is associated with a temperature control region and provides independent temperature control for its associated temperature control region.

[0008] In yet another embodiment, a substrate support assembly is provided. The substrate support assembly includes an upper surface for supporting a substrate, the upper surface being divided into a plurality of temperature control regions, and a plurality of thermal control devices for managing heat transfer within the substrate support assembly. Each thermal control device includes a thermoelectric module and a heat pipe assembly coupled to the thermoelectric module. Each of the plurality of thermal control devices is associated with a temperature control region and provides independent temperature control for its associated temperature control region.

[0009] In yet another embodiment, a method is provided. The method includes transporting a temperature measurement disk to a processing area of a processing chamber without breaking a vacuum. The temperature measurement disk includes one or more cameras configured to perform infrared-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface within the processing area of the processing chamber, for which purpose the method includes imaging the at least one surface using the temperature measurement disk. The method further includes determining a temperature difference by comparing the measured temperature with a desired temperature. The method further includes adjusting the temperature of the at least one chamber surface to correct the temperature difference. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] To enable a more detailed understanding of the above-described configuration of the present disclosure, a more specific description of the embodiments briefly summarized above will be made with reference to the embodiments. Some of these embodiments are shown in the accompanying drawings. However, it should be noted that since the present disclosure may include other equally effective embodiments, the accompanying drawings merely show typical embodiments of the present disclosure and should not be construed as limiting the scope.

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[0011] For ease of understanding, where possible, the same reference numerals are used to indicate the same elements common to these drawings. It is contemplated that the elements and configurations of one embodiment may be beneficially incorporated into other embodiments without specific description. Detailed description

[0012] The following disclosure describes techniques and apparatus for temperature control and substrate processing chambers. To provide a complete understanding of the various embodiments of the present disclosure, specific details are set forth in the following description and FIGS. 1-8. To avoid unnecessarily obscuring the description of the various embodiments, other details of well-known structures and systems frequently associated with etching processes, deposition processes, and temperature control are not described in the following disclosure.

[0013] Many of the details, dimensions, angles, and other configurations shown in the figures are merely illustrative of particular embodiments. Accordingly, other embodiments may have other details, components, dimensions, angles, and configurations without departing from the spirit or scope of the present disclosure. Additionally, further embodiments of the present disclosure may be practiced without some of the details described below.

[0014] The embodiments described herein are described below with reference to temperature control processing, which can be performed using any suitable thin film deposition or etching system. Examples of suitable systems include the CENTURA® system, the PRECISION5000® system, the PRODUCER® system, the PRODUCER® GTTM system, the PRODUCER® XP Precision™ system, the PRODUCER® SE™ system, the Sym3® processing chamber, and the Mesa™ processing chamber, all of which are commercially available from Applied Materials, Santa Clara, California. Additionally, other tools capable of performing in-situ temperature control processing may be adapted to benefit from the embodiments described herein. Moreover, any system enabling the in-situ temperature control processing described herein may be used to provide an advantage. The description of the apparatus described herein is illustrative and should not be construed or described as limiting the scope of the embodiments described herein.

[0015] Some embodiments of the present disclosure generally relate to semiconductor plasma etching chamber technology and hardware control systems for addressing issues of non-uniformity in heating or cooling of showerhead chamber surfaces (e.g., upper electrode, lower electrode, and chamber sidewalls) within an etching processing chamber.

[0016] As technology nodes progress and feature sizes decrease, precise control of high frequency, gas flow, and thermal control helps achieve on-wafer uniformity, including device performance, and improved semiconductor process yield that reduces cost per wafer. Based on the chemical components used in etching and the process application requirements, performing uniform and stable heating or cooling across the chamber surface (e.g., showerhead assembly, electrostatic chuck, and chamber walls) is crucial to achieving reproducible process results. Since plasma etching generates heat on the exposed surface of the showerhead assembly, controlling the temperature of the showerhead assembly and other chamber surfaces is essential to avoid surface hot spots or cold spots. These hot spots and cold spots can cause polymers to adhere to the cold spots, resulting in slower etching rates and profile control issues. This problem worsens when etching high aspect ratio features or in other 1xnm node limit applications.

[0017] Semiconductor plasma processing hardware typically includes a high vacuum chamber with a pumping system. Often, an upper source / electrode with a showerhead and gas distribution is used depending on the application and the film being processed, and the silicon wafer is etched while electrostatically clamped to an electrostatic chuck within the vacuum chamber during plasma processing. Electrical (AC / DC / high frequency) control, gas flow control, and thermal uniformity are important to maintain process uniformity and critical dimension (「CD」) variations within a specific range. Some embodiments of the present disclosure provide methods and apparatus for maintaining zone-responsive heating and cooling of the showerhead assembly and other chamber surfaces, and these methods and apparatus include closed-loop control systems used for in-situ temperature adjustment.

[0018] In some embodiments of the present disclosure, an infrared camera embedded in a wafer-sized disk (vacuum-compatible material) is used to monitor the temperature of one or more surfaces within a processing chamber. In some embodiments, the camera (e.g., a nanocamera) is embedded in at least one of the top and bottom surfaces of the disk to enable infrared-based imaging of the upper electrode (e.g., a showerhead assembly), the lower electrode (e.g., an electrostatic chuck), and the chamber walls without venting the processing chamber. Further, the disk can move from a storage position within a FOUP to a transfer chamber and ultimately to the processing chamber without venting the processing chamber. Additionally, an existing platform robot can be used to move the disk within the processing chamber. Within the processing chamber, existing wafer lift pins can be used to position the disk and image both the upper and lower electrodes. Image data can be wirelessly transferred to an external device and a control system to create a temperature distribution map of the electrodes and the chamber surface. Depending on the location of hot spots or cold spots indicated by the temperature distribution map, the temperature of the electrodes and the chamber surface can be adjusted (increased or decreased) at the pixel level to generate a more uniform temperature distribution.

[0019] In some embodiments of the present disclosure, an improved design of a showerhead assembly is provided. The conventional showerhead assembly design includes a standard chill plate where the entire chill plate is heated or cooled. In some embodiments of the present disclosure, a showerhead assembly is provided that can control temperature via a plurality of zones or pixels. A typical showerhead design includes a gas distribution plate, which is usually ceramic and is bonded to an aluminum base to improve lifespan and yield. In some embodiments of the present disclosure, a heat pipe that combines the principles of both heat conduction and phase transition is used as part of the heat transfer device to enable efficient heat transfer between two solid interfaces (such as upper and lower aluminum plates). Some embodiments of the present disclosure also include a showerhead assembly comprising upper and lower aluminum bases connected to a series of heat pipes. The heat pipes may be arranged in a predefined pixel pattern.

[0020] In some embodiments of the present disclosure, elements or regions of each pixel of the showerhead assembly are also connected to thermoelectric elements (e.g., p-type and n-type elements). Each thermoelectric element is coupled to a heat pipe to form a thermal control device. Each thermal control device is connected to a pixel or region to independently control the temperature of that pixel or region. The thermoelectric elements are configured to be electrically connected in series and thermally connected in parallel to maximize the power generation output. Since the effect can be reversed and operated, both module forms can function as coolers or generators, and when a voltage is applied to the module, the module pumps heat. Some embodiments of the present disclosure also include a standard cold plate for use as a heat exchanger to rapidly heat and cool the temperature of the showerhead assembly as a whole. In some embodiments, temperature adjustment of the showerhead assembly to remove hot spots or cold spots is achieved using infrared-based imaging data and wireless data exchange with an external control system, as well as pixel control for temperature adjustment.

[0021] FIG. 1 is a plan view of an example of a processing system 100 according to one or more embodiments of the present disclosure. FIG. 1 shows the possible movement of the temperature measurement disk 300 through the processing system 100. The processing system 100 generally includes a factory interface 105, a side storage pod 103 for housing the temperature measurement disk 300, a transfer chamber 112, an atmosphere holding station 109, and a plurality of twin processing chambers 108a-108b, 108c-108d, and 108e-108f. The factory interface 105 operates at atmospheric pressure for housing and holding substrates. The factory interface 105 includes at least one atmospheric robot 104, such as a dual blade atmospheric robot, and is configured to receive one or more substrate cassettes.

[0022] On the first side of the factory interface 105, one or more load ports may be provided. In one embodiment, three load ports are provided. For clarity, only two load ports 111, 113 are depicted in the embodiment of FIG. 1. The load ports 111, 113 are adapted to receive a substrate (e.g., a 300 mm diameter wafer) to be processed from a front-opening unified pod ( "FOUP") 102. The FOUP 102 has one or more substrate carriers configured to temporarily and transportably store substrates. The load lock chamber 106 is connected to the second side (opposite the first side) of the factory interface 105. The load lock chamber 106 is connected to a transfer chamber 112, in which a plurality of twin processing chambers 108a-108b, 108c-108d, and 108e-108f are arranged.

[0023] The substrate is transported from the FOUP 102 to the load lock chamber 106 by the atmospheric robot 104. The second robot arm 110 is disposed within the transfer chamber 112 connected to the load lock chamber 106 and transports the substrate from the load lock chamber 106 to the processing chambers 108a-108f connected to the transfer chamber 112. Thus, the factory interface 105 provides a transition between the atmospheric environment of the factory interface and the vacuum environment of the tool or processing chamber.

[0024] The processing chambers 108a - 108f can be of any type of processing chamber, for example, a chemical vapor deposition (CVD) chamber, an atomic layer deposition (ALD) chamber, a physical vapor deposition (PVD) chamber, an ion metal implantation (IMP) chamber, a plasma etching chamber, an annealing chamber, other furnace chambers, etc. In one embodiment, the processing chambers 108a - 108f are configured to deposit, anneal, cure, and / or etch a film on a substrate. In one configuration, three pairs of processing chambers (e.g., 108a - 108b, 108c - 108d, and 108e - 108f) can be used to deposit a film on a substrate. Optionally, any of these processing chambers 108a - 108b, 108c - 108d, and 108e - 108f, or one or more additional processing chambers, can be connected to the transfer chamber 112 to arrange for performing other normal semiconductor device manufacturing processes, such as oxidation, film deposition, etching, heating, degassing, ashing, ion implantation, measurement, etc., as needed.

[0025] The side storage pod 103 may include a chamber body 103B for holding the temperature measurement disk 300 and a slit valve 103A. The slit valve 103A is used to seal the internal region of the chamber body 103B after the temperature measurement disk 300 is placed therein by the atmospheric robot 104.

[0026] The temperature measurement disk 300 is transported by the atmospheric robot 104 from the side storage pod 103 to the load lock chamber 106. The second robot arm 110 is disposed within the transfer chamber 112 connected to the load lock chamber 106 to transport the temperature measurement disk 300 from the load lock chamber 106 to the processing chambers 108a - 108f where temperature monitoring is performed.

[0027] In some embodiments, the temperature measurement disk 300 is disposed in the FOUP 102. The temperature measurement disk 300 is transported from the FOUP 102 to the load lock chamber 106 by the atmospheric robot 104. The second robot arm 110 is disposed in a transfer chamber 112 connected to the load lock chamber 106 to transport the temperature measurement disk 300 from the load lock chamber 106 to the processing chambers 108a - 108f connected to the transfer chamber 112.

[0028] FIG. 2 is a cross - sectional view of an example of a processing chamber 200 in which the temperature measurement disk 300 is disposed according to one or more embodiments of the present disclosure. The processing chamber 200 may be any of the processing chambers 108a - f of the processing system 100. The processing chamber 200 is connected to a gas panel 210 and a control system 220. The processing chamber 200 generally includes a chamber body 230 having an upper wall 232, side walls 234, and a bottom wall 236. The upper wall 232, side walls 234, and bottom wall 236 define a processing volume 238. A substrate support assembly 240 is provided within the processing volume 238 of the processing chamber 200. The substrate support assembly 240 generally includes an electrostatic chuck 242 supported by a stem 244. The electrostatic chuck 242 can be manufactured from aluminum, ceramic, and other suitable materials. The electrostatic chuck 242 can be moved vertically within the processing chamber 200 using a moving mechanism (not shown).

[0029] The electrostatic chuck 242 has an upper surface 246 for supporting a substrate. Lift pins 243 are movably disposed through the substrate support assembly 240 and are adapted to space a substrate (if present) or the temperature measurement disk 300 from the upper surface 246. The temperature measurement disk 300 is disposed at an appropriate distance from the surface to be monitored. (The surface is, for example, any one of the upper surface 246 of the electrostatic chuck 242, the surface of the shower head assembly 260, the surface of the side wall, the surface of the upper wall 232, and the surface of the bottom wall.) In one embodiment, as shown in FIG. 2, the temperature measurement disk 300 is disposed in the processing volume 238 using the lift pins 243 so that the temperature measurement disk 300 can monitor a plurality of surfaces.

[0030] The electrostatic chuck 242 includes a chuck electrode 248. This chuck electrode may be a mesh of conductive material. The chuck electrode 248 may be embedded in the electrostatic chuck 242. The chuck electrode 248 is connected to a power supply 274 and, when energized, electrostatically clamps a substrate to the upper surface 246 of the electrostatic chuck 242. The power supply 274 may be connected to the chuck electrode 248 via a matching network 276.

[0031] A showerhead assembly 260 having a plurality of openings 262 is disposed above the electrostatic chuck 242 and at the upper part of the processing chamber 200. The openings 262 of the showerhead assembly 260 are utilized to introduce a processing gas into the processing chamber 200. The openings 262 may have various sizes, numbers, distributions, shapes, designs, and diameters to facilitate various processing gas flows according to various processing requirements. The showerhead assembly 260 is connected to a gas panel 210, and various gases can be supplied to the processing volume 238 by this gas panel during processing. Plasma is formed from the processing gas mixture coming out of the showerhead assembly 260, promoting thermal decomposition of the processing gas and etching or depositing materials on the surface of a substrate (not shown).

[0032] The showerhead assembly 260 and the electrostatic chuck 242 can form a pair of spaced electrodes within the processing volume 238. One or more high-frequency power supplies 270 provide a bias potential to the showerhead assembly 260 via an optional matching network 272 to facilitate the generation of plasma between the showerhead assembly 260 and the electrostatic chuck 242. Alternatively, the high-frequency power supply 270 and the matching network 272 may be connected to the showerhead assembly 260, the electrostatic chuck 242, or both, or may be connected to an antenna (not shown) disposed outside the processing chamber 200.

[0033] The vacuum pump 250 is connected to a port formed in the bottom wall 236 of the processing chamber 200. The vacuum pump 250 is used to maintain the inside of the processing chamber 200 at a desired gas pressure. The vacuum pump 250 also exhausts the processed gas and by-products of the process from the processing chamber 200.

[0034] The processing chamber 200 may further include additional equipment for controlling the chamber pressure. The additional equipment is, for example, a valve (e.g., a throttle valve and a shut-off valve) disposed between the chamber body 230 and the vacuum pump 250 to control the chamber pressure.

[0035] The control system 220 includes a central processing unit (CPU) 222, a memory 226, and support circuits 224, and uses these to control the processing sequence and adjust the gas flow from the gas panel 210. The CPU 222 may be of any form of general-purpose computer processor that can be used in an industrial environment. Software routines may be stored in the memory 226 such as random access memory, read-only memory, floppy disks, hard disk drives, or other forms of digital storage. The support circuits 224 are conventionally connected to the CPU 222 and may include a cache, a clock circuit, an input / output system, a power supply, and the like. The bidirectional communication between the control system 220 and the various components of the processing chamber 200 is processed via a number of signal cables collectively called a signal bus 228. A part of it is shown in FIG. 2.

[0036] FIG. 3A is a top view of an example of a temperature measurement disk 300 according to one or more embodiments of the present disclosure. FIG. 3B is a cross-sectional view taken along line 3B-3B of the temperature measurement disk 300 of FIG. 3A according to one or more embodiments of the present disclosure. In some embodiments, the temperature measurement disk 300 is an infrared-based temperature measurement disk. The temperature measurement disk 300 is typically made to be the same size as a wafer processed by a processing chamber. For example, in some embodiments where a processing system is configured to process 300 mm size wafers, the temperature measurement disk 300 is made to be the same size as a 300 mm wafer size disk. In some embodiments where a processing system is configured to process 200 mm size wafers, the temperature measurement disk 300 is made to be the same size as a 200 mm wafer size disk. By making the size of the temperature measurement disk 300 the same as that of the wafer processed by the processing chamber, the temperature measurement disk 300 can move from a storage location (e.g., a FOUP or a side storage pod) to a transfer chamber and finally move into the processing chamber without venting through the processing chamber. An existing platform robot can be used to transfer the temperature measurement disk 300 into the processing chamber. Existing lift pins may be used to position the temperature measurement disk 300 within the processing chamber. Although the temperature measurement disk 300 is described as a disk, it may have other shapes depending on the processing chamber to be monitored.

[0037] The temperature measurement disk 300 may include any vacuum-compatible material. Suitable materials include dielectric materials and silicon-containing materials. In one embodiment, the temperature measurement disk 300 is composed of a silicon-containing material. In some embodiments, the temperature measurement disk 300 is composed of a dielectric material.

[0038] The temperature measurement disk 300 has one or more cameras 310a - 310i (collectively "310") disposed thereon. The one or more cameras 310 are typically configured to perform infrared - based imaging of the surfaces within the processing chamber. In one embodiment, the camera 310 is configured to perform infrared imaging of the chamber surface and wirelessly transmit an infrared image from inside the processing chamber. The camera 310 may be attached to the temperature measurement disk 300 using any suitable attachment method. In some embodiments, the camera 310 is adhered to the surface of the temperature measurement disk 300. In some embodiments, the camera 310 is partially or fully embedded in the body of the temperature measurement disk 300. In some embodiments, the one or more cameras are nano - cameras.

[0039] In some embodiments, the camera 310 is disposed on both the front surface 320 and the back surface 330 of the temperature measurement disk 300. By disposing the camera 310 on both the front surface 320 and the back surface 330 of the temperature measurement disk 300, the opposing chamber surfaces can be imaged simultaneously. For example, referring to FIG. 2, the camera 310 on the front surface 320 can image the surface of the showerhead assembly 260. On the other hand, the camera 310 on the back surface 330 can image the upper surface 246 of the electrostatic chuck 242. In some embodiments, the camera 310 is disposed on only the front surface 320 or the back surface 330 of the temperature measurement disk 300. In some embodiments, nine or more cameras are disposed on the front surface of the disk - shaped body. In some embodiments, nine or more cameras are disposed on the back surface of the disk - shaped body. It should also be understood that any number of cameras can be used, for example, depending on the number of surfaces to be monitored and the total surface area of the objects to be monitored.

[0040] FIG. 4 is a cross-sectional view of a showerhead assembly 400 according to one or more embodiments of the present disclosure. In some embodiments, the showerhead assembly 400 may be used in place of the showerhead assembly 260 within the processing chamber 200. The showerhead assembly 400 incorporates one or more thermal control devices 460a - 460e (collectively 460) to manage the transfer of heat within the showerhead assembly 400. Each thermal control device 460 includes a thermoelectric module 464a - 464e (collectively 464) and a heat pipe assembly 466a - 466e (collectively 466). In some embodiments, each thermal control device 460 is associated with a pixel or region as described with respect to FIGS. 7A - 7D. Each thermal control device 460 provides independent temperature control for the associated pixel or region.

[0041] The showerhead assembly 400 includes a chill plate (cover) 420, a top plate 430, a bottom plate 440, and a gas distribution faceplate 450. The chill plate 420 is disposed on the top plate 430. The chill plate 420 provides temperature control for the showerhead assembly 400. A recess 422 is defined between the chill plate 420 and the top plate 430.

[0042] The top plate 430 includes a plurality of through-holes 432. In one embodiment, each of the plurality of through-holes 432 houses the heat pipe assembly 466 of the thermal control device 460. In some embodiments, the top plate 430 has a plurality of second through-holes (not shown in this figure) for supplying a processing gas to the processing chamber. The top plate 430 can be made of, by way of non-limiting example, aluminum, ceramic, Si - SiC, or graphite converted to silicon carbide. In one embodiment, the top plate 430 is a metal plate. In one embodiment, the top plate 430 is made of aluminum. In some embodiments, the top plate 430 is made of anodized aluminum.

[0043] The bottom plate 440 includes a plurality of holes 442. In one embodiment, each of the plurality of holes 442 houses a part of the heat pipe assembly 466 of the thermal control device 460. In some embodiments, the bottom plate 440 has a plurality of second through holes (not shown in this figure) for supplying a processing gas to the processing chamber. The bottom plate 440 can be made of, by way of example and not limitation, aluminum, ceramic, Si-SiC, or graphite converted to silicon carbide. In one embodiment, the bottom plate 440 is a metal plate. In one embodiment, the bottom plate 440 is made of aluminum. In some embodiments, the bottom plate 440 is made of anodized aluminum.

[0044] The gas distribution face plate 450 includes a plurality of through holes (not shown) for supplying a processing gas into the interior of the semiconductor processing chamber. The through holes of the gas distribution face plate 450 can be, by way of example and not limitation, circular or crescent-shaped.

[0045] The gas distribution face plate 450 can be made of, by way of example and not limitation, silicon carbide, yttrium oxide, anodized aluminum, ceramic, quartz, or silicon. In one embodiment, the gas distribution face plate 450 is made of silicon carbide. The gas distribution face plate 450 may be joined to the first lower main surface 444 of the bottom plate 440 by a joining layer 446. In some embodiments, the joining layer 446 is finished using a silicone-based adhesive containing various forms of fillers adjusted to increase the thermal conductivity. The joining of the gas distribution face plate 450 to the bottom plate 440 can be achieved using other materials and / or methods known in the art. However, when performing the joining of the gas distribution face plate 450 to the bottom plate 440 using an adhesive, this adhesive needs to have sufficient compatibility to prevent delamination due to the thermal mismatch between the gas distribution face plate 450 and the bottom plate 440. Although a joining layer is shown, it should be understood that the gas distribution face plate 450 may be attached to the showerhead assembly using other attachment methods known in the art.

[0046] The showerhead assembly 400 further includes a plurality of thermal control devices 460a-460e (collectively 460). Each thermal control device 460 includes a thermoelectric module 464a-464e (collectively 464) connected to a heat pipe assembly 466a-466e (collectively 466). Each thermal control device 460 is associated with a pixel or region defined on the gas distribution faceplate 450. Each thermal control device 460 combines both the principles of heat conduction and phase transition to enable efficient heat transfer between the top plate 430, the bottom plate 440, and the chill plate 420. Each thermal control device 460 is associated with a pixel or region as described with reference to FIGS. 7A-7D.

[0047] FIG. 5 is a cross-sectional view of a thermoelectric module that can be used with a showerhead assembly according to one or more embodiments of the present disclosure. The thermoelectric module may be the thermoelectric module 464, and the showerhead assembly may be the showerhead assembly 400. Generally, the thermoelectric module 464 is composed of an n-type thermoelectric material 510, a p-type thermoelectric material 520, conductive metal layers 530a and 530b, an upper substrate 540a, and a bottom substrate 540b. In some embodiments, a first insulating layer 550a is disposed between the conductive metal layer 530a and the upper substrate 540a. In some embodiments, a second insulating layer 550b is disposed between the conductive metal layer 530b and the bottom substrate 540b.

[0048] The n-type thermoelectric material 510 and the p-type thermoelectric material 520 are in bulk form, and both the upper substrate 540a and the bottom substrate 540b have high thermal conductivity. In some embodiments, the n-type thermoelectric material 510 and the p-type thermoelectric material 520 are semiconductors or semimetal elements or compounds having a high ZT value (for example, bismuth telluride ((BiSb)2(TeSe)3) system added with antimony and selenium, bismuth telluride (Bi2Te3), lead telluride (PbTe), and lead tin telluride (PbSnTe) system, etc.) or silicon (Si) and silicon germanium (SiGe) system, half-Heusler dielectric alloy system (ferromagnetic non-ferrous alloy), silicide, or tungsten diselenide (WSe2) system, etc. of compound systems. Also, the thermoelectric element can be formed by sputtering, thermal evaporation, arc ion plating, chemical vapor deposition, electroplating, or chemical plating. However, in practical applications, the selection of materials and formation methods is determined according to actual needs and field conditions. There are no specific limitations in the present disclosure.

[0049] The n-type thermoelectric material 510 and the p-type thermoelectric material 520 are configured to be electrically connected in series, but are thermally connected in parallel so that the power generation output is maximized. Next, the thermoelectric element is sandwiched between two ceramic plates. One side covers the high-temperature joint surface, and the other side covers the low-temperature joint surface. It is also possible to reverse the effect, and both module types can function as a cooler or a generator. When a voltage is applied to the module, the module pumps heat. However, when a temperature difference is applied across the module, a voltage is generated.

[0050] In some embodiments, the upper substrate 540a and the bottom substrate 540b also have insulating properties. The function of the thermoelectric module is mainly determined by the properties of the thermoelectric materials 510 and 520. As shown in FIG. 5, the n-type thermoelectric material 510 and the p-type thermoelectric material 520 are usually in a vertical form and are connected in series via conductive metal layers 530a and 530b.

[0051] In some embodiments, the upper substrate 540a and the lower substrate 540b with electrical insulation and high thermal conductivity are made of a ceramic material with high thermal conductivity, such as aluminum oxide, aluminum nitride, silicon carbide, etc., or a silicon or metal substrate whose surface is covered with an insulating dielectric layer. However, there are no specific restrictions on the selection of materials in actual applications in the present disclosure. In some embodiments, the upper substrate 540a, i.e., the heat sink plate, functions as a heat sink, and thereby, for example, heat is released to the chill plate 420. In some embodiments, the upper substrate 540a is disposed adjacent to the chill plate 420. In some embodiments, the lower substrate 540b functions as a cooling plate that absorbs heat from, for example, the top plate 430 and / or the bottom plate 440. In some embodiments, the lower substrate 540b is disposed adjacent to the top plate 430 and / or the bottom plate 440.

[0052] In the application of the thermoelectric cooling module, the input direct current flows through the n-type thermoelectric material 510 and the p-type thermoelectric material 520 in a direction parallel to the direction of the heat flow (vertical movement) of the thermoelectric conversion device (vertical flow), and the thermoelectric cooling module generates a temperature difference and absorbs and dissipates heat at the lower and upper parts respectively. For example, power generation due to the temperature difference is taken as an example. The temperature difference and the direction of the heat flow of the thermoelectric module are also parallel to the direction of the current flow generated in the thermoelectric material.

[0053] FIG. 6 is a cross-sectional view of a heat pipe assembly that can be used with a shower head assembly according to one or more embodiments of the present disclosure. The heat pipe assembly may be the heat pipe assembly 466, and the shower head assembly may be the shower head assembly 400. The heat pipe assembly 466 forms a part of the heat control device 460 in FIG. 4. As shown in FIG. 4, the heat control devices 460a to 460e are composed of a plurality of parallel and independently operating heat pipes.

[0054] Each heat pipe assembly 466 includes a casing 606 that surrounds a cavity 608. The casing may be formed of a material with high thermal conductivity, such as copper or aluminum. The cavity 608 is under reduced pressure and is filled with only a small proportion of the volume of the working fluid 612. The working fluid 612 may be water, ethanol, acetone, sodium, or mercury. The working fluid 612 can be selected according to the operating temperature of the heat pipe assembly 466. Since the inside of the cavity is in a partial vacuum state, a part of the working fluid 612 in the cavity 608 is in the liquid phase, and the remaining part of the working fluid 612 is in the gas phase.

[0055] The heat pipe assembly 466 may have a high-temperature interface 602 configured to be in thermal contact with a target cooled at a first end, and a low-temperature interface 604 configured to be in thermal contact with a heat sink at a second end opposite the high-temperature interface 602. Optionally, a wick structure 610 may be arranged inside the casing 606 to surround the cavity 608. The wick structure 610 is configured to apply capillary pressure to the liquid level of the working fluid 612 at the low-temperature interface 604 and transport the working fluid 612 to the high-temperature interface 602 by capillary action.

[0056] The heat pipe assembly 466 is a heat exchange device that combines the principles of both heat conduction and phase transition to enable efficient heat transfer between the high-temperature interface 602 and the low-temperature interface 604. At the high-temperature interface 602 within the heat pipe, the liquid of the working fluid 612 in contact with the casing 606 turns into vapor by absorbing heat from the heat source. This heat source is in thermal contact with the high-temperature interface 602. The vapor condenses into liquid at the low-temperature interface 604 and releases latent heat towards the heat sink in thermal contact with the low-temperature interface. Then, the liquid returns to the high-temperature interface 602 by any one of the capillary action, centrifugal force, or gravitational action of the wick structure 610. This cycle is repeated.

[0057] In one embodiment, as shown in FIG. 4, the high-temperature boundary surface 602 of the heat pipe assembly 466 is in thermal contact with at least one of the top plate 430 and the bottom plate 440, which are surfaces to be cooled, and the low-temperature boundary surface 604 is in thermal contact with the thermoelectric module 464 and the chill plate 420 that functions as a heat sink.

[0058] FIGS. 7A-7D show schematic views of various surfaces 700a-700d of components that receive temperature control using a thermal control device according to one or more embodiments of the present disclosure. Each of the surfaces 700a-700d is divided into a plurality of segments or pixels. By connecting each segment to a thermal control device such as, for example, the thermal control device 460, segmented temperature control of each temperature control region of each of the surfaces 700a-700d becomes possible.

[0059] The surfaces 700a-700d may be the surface of a gas distribution plate, an electrostatic chuck (e.g., a wafer support surface), or a chamber wall. In one embodiment, the surfaces 700a-700d represent various designs of the surface of a gas distribution faceplate, such as the gas distribution faceplate 450 as shown, for example, in FIG. 4. In another embodiment, the surfaces 700a-700d represent various designs of the wafer support surface of a chuck, such as the electrostatic chuck 242 shown, for example, in FIG. 2. In another embodiment, the surfaces 700a-700d represent various designs of the surface of a chamber wall, such as any of the upper wall 232, side wall 234, and bottom wall 236 as shown, for example, in FIG. 2.

[0060] FIG. 7A shows a schematic view of one embodiment of the surface 700a, which may receive temperature control using a thermal control device according to one or more embodiments of the present disclosure. The surface 700a includes a plurality of concentric regions including a central region 702, an inner intermediate region 704, an intermediate region 706, an outer intermediate region 708, and an outer region 710. Each region is divided into a plurality of segments or pixels, each of which receives independent thermal control using the thermal control device described herein. The surface 700a includes 48 segments.

[0061] Figure 7B shows a schematic view of another embodiment of surface 700b, which may receive temperature control using a thermal control device according to one or more embodiments of the present disclosure. Similar to surface 700a, surface 700b also includes a plurality of concentric regions. Surface 700a includes a plurality of concentric regions, which include a central region 712, an inner intermediate region 714, an intermediate region 716, an outer intermediate region 718, and an outer region 720. Each region is divided into a plurality of segments or pixels, each of which receives independent thermal control using the thermal control device described herein. Surface 700a includes 32 segments.

[0062] Figure 7C shows a schematic view of another embodiment of surface 700c, which may receive temperature control using a thermal control device according to one or more embodiments of the present disclosure. Surface 700c is divided into a plurality of pixels or hexagonal segments 730. Each pixel or hexagonal segment 730 receives independent thermal control using the thermal control device described herein.

[0063] Figure 7D shows a schematic view of another embodiment of surface 700c, which may receive temperature control using a thermal control device according to one or more embodiments of the present disclosure. Surface 700d is divided into a plurality of segments or pixels 740 in an XY pattern. Each segment or pixel 740 receives independent thermal control using the thermal control device described herein.

[0064] Figure 8 is a process flow diagram of one embodiment of method 800, which is a method for in-situ temperature control according to one or more embodiments of the present disclosure. In some embodiments, method 800 is executed by a processing system, such as processing system 100 shown in FIG. 1, for example. Method 800 may be executed by other systems that benefit from improved temperature control. Method 800 may be executed during batch processing of wafers. For example, when executing a batch of 500 wafers, the temperature measurement disk may be replaced with one wafer after any number of wafers selected by the user.

[0065] In operation 810, the temperature measurement disk is transported to the processing chamber. In some embodiments, the temperature measurement disk is transported to the processing region of the processing chamber without breaking the vacuum. The temperature measurement disk may be the temperature measurement disk 300 having a camera 310 configured to image the surface inside the processing chamber based on infrared rays. The surface to be imaged includes the surface where temperature control is desired. Usually, the surface to be imaged includes at least one of the surfaces of the showerhead assembly, the inner surface of the chamber (e.g., the inner surface of the processing chamber including side walls, bottom wall, and ceiling), and the exposed surface of the substrate support assembly (e.g., electrostatic chuck). In some embodiments, the temperature measurement disk is used to image at least one surface in order to measure the temperature of at least one region of at least one chamber surface within the processing region of the processing chamber. For example, referring to FIG. 2, the camera 310 on the front surface 320 may image the surfaces of the showerhead assembly 260 and the side wall 234. On the other hand, the camera 310 on the back surface 330 may image the surfaces of the electrostatic chuck 242 and the side wall 234. The infrared image captured by the temperature measurement disk may be wirelessly transferred to a control system (e.g., control system 220).

[0066] In operation 820, the captured infrared image of the imaged surface is analyzed to determine whether the region of the imaged surface is within the specification range of the processing temperature. The captured infrared image may be used to create a measured temperature distribution of the imaged surface. The measured temperature distribution may be compared with the specification range of the temperature. The specification range of the processing temperature may be set based on the range of the desired temperature for the already executed processing that has achieved the desired result. If the temperature distribution indicates that all regions of the surface are within the desired temperature range, in operation 830, the method 800 ends and the substrate processing in the chamber continues.

[0067] If the measured temperature distribution indicates that one or more regions of the surface are outside the desired temperature range, at operation 840, method 800 proceeds to operation 850 where temperature adjustment of the imaging surface is performed. If the measured temperature of a particular region is below the desired temperature range, this region is identified as a cold spot. If the measured temperature exceeds the desired temperature range of a particular region, this region is identified as a hot spot.

[0068] At operation 860, the measured temperature distribution is compared to a reference temperature distribution, which is determined based on the desired processing temperature. In some embodiments, the reference temperature distribution is included in a look-up table or other algorithmic approach. The look-up table may be stored in control system 220. The measured temperature distribution is compared to the reference temperature distribution to create a temperature distribution map. From the temperature control map, regions with local cold spots and / or hot spots are identified.

[0069] At operation 870, based on the temperature control map, individual thermoelectric modules may be actuated to raise or lower the temperature of each region identified as a cold spot or hot spot. For example, additional voltage may be applied to thermoelectric module 464 to increase heat pumping. Depending on the location of the hot spot or cold spot indicated by the temperature distribution map, the temperature of the electrodes and the chamber surface may be adjusted (increased or decreased) at the pixel level to generate a more uniform temperature distribution.

[0070] After the temperature of the imaging surface is within the desired temperature specifications, substrate processing may continue.

[0071] Briefly, some of the advantages of the present disclosure include an apparatus and method for in-situ temperature measurement inside a processing chamber without venting the processing chamber. According to some of the embodiments described herein, a function of measuring and adjusting temperature levels at the pixel level is provided to generate a more uniform temperature distribution. This more uniform temperature distribution reduces hot spots and cold spots present on the chamber surface, which in turn reduces polymer adhesion to cold spots, thus maintaining the etching rate and reducing profile control issues. Additionally, some of the embodiments described herein can be implemented using currently available hardware and system configurations.

[0072] When introducing elements of the present disclosure or exemplary aspects or embodiments thereof, the articles "a", "one", "the", and "said" are intended to mean that there is one or more elements.

[0073] The terms "comprising", "including", and "having" are intended to be inclusive and mean that additional elements other than the recited elements may exist.

[0074] While the foregoing is directed to embodiments of the present disclosure, additional and further embodiments of the present disclosure can be made without departing from its basic scope, which is determined based on the following claims.

Claims

1. A temperature measuring disk for substrate processing, comprising: The main body, The front and a back surface opposite the front surface; A temperature disk equipped with one or more cameras positioned on the front, rear, or both the front and rear, configured to perform infrared-based imaging of the surface of the processing chamber and measure the temperature of the surface of the processing chamber.

2. The temperature disc of claim 1 , wherein the one or more cameras are mounted on a surface of the body.

3. The temperature disc of claim 1 , wherein the one or more cameras are at least partially embedded in the body.

4. The temperature disc of claim 1 , wherein the body comprises a dielectric material.

5. The temperature disk of claim 1 , wherein the one or more cameras are configured to image a surface of the showerhead assembly.

6. The temperature sensing disk of claim 1 , wherein the one or more cameras are configured to image a surface of the electrostatic chuck.

7. The temperature disk of claim 1 , wherein the one or more cameras are configured to wirelessly transmit images of the surface of the process chamber.

8. The temperature disk of claim 1 , wherein the one or more cameras are configured to image a surface of the chamber wall.

9. The temperature disc of claim 1 , wherein the one or more cameras are nano cameras.

10. 1. An in situ temperature control system for a substrate processing chamber, comprising: The temperature measuring disk according to claim 1 ; a control system coupled to the temperature disk, A processor; A system having a control system having a memory coupled to a processor.

11. The system of claim 10 , wherein the temperature disk is configured to wirelessly transmit the measured temperature to the control system.

12. The system of claim 10 , wherein the control system is configured to compare the measured temperature to a baseline temperature.

13. 1. A method for monitoring a temperature in a processing chamber, comprising: measuring the temperature of one or more surfaces of the processing chamber by imaging the one or more surfaces using an infrared camera embedded or attached to the disk; The method comprises adjusting a temperature of one or more imaged surfaces.

14. The method of claim 13 , wherein adjusting the temperature of the one or more imaged surfaces is based on a comparison of the measured temperature to a baseline temperature.

Images