Epoxy resin composition, cured product, and semiconductor device

Abstract

To provide an epoxy resin composition which exhibits high toughness (fracture toughness) when being cured, and prevents warpage on a wafer after molding.SOLUTION: An epoxy resin composition containing an epoxy resin (A), a curing accelerator (B), and an inorganic filler (C), contains an epoxy resin (A-1) having a plurality of aromatic ring structures as the epoxy resin (A), and has viscosity at 25°C of 1,000 Pa s or less, and a fracture toughness value (K1c) of 0.95 MPa m1 / 2 or more.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to an epoxy resin composition, and also to a cured product, a semiconductor device, and a method for manufacturing a semiconductor device.

Background Art

[0002] Many semiconductor elements such as integrated circuits constituting semiconductor devices are used in a form sealed with a sealing material. There are multiple methods for sealing semiconductor elements, and one of them is the compression molding method. The compression molding method is a method in which a sealing material made of a liquid or granular resin is placed in a mold, heated and melted as necessary, and compressed and molded, and is suitable for manufacturing relatively large molded products. In recent years, the opportunity to adopt the compression molding method for sealing semiconductor elements has been increasing. This is due to the spread of wafer-level CSP (chip size package) technology. This technology is a method in which compression molding (compression molding) is performed using a sealing material (compression mold material) at the wafer stage, and this is cured to seal a large number of semiconductor elements at once, and then singulated. That is, since it is a method of sealing the wafer after circuit formation is completed without singulating it, it can be said that it is suitable for the compression molding method.

[0003] As a conventional curable resin composition used in the compression molding method, a solid (for example, granular) composition has been generally used. On the other hand, in recent years, with the progress of compression molding technology, the use of liquid curable resin compositions has also been increasing. Such liquid curable resin compositions are called liquid compression mold (LCM) materials. LCM materials use liquid epoxy resin compositions from the viewpoint of the balance of various properties such as electrical properties, moisture resistance, heat resistance, mechanical properties, and adhesiveness.

[0004] When compared with the method of encapsulating after singulating semiconductor elements, although wafer-level CSP has high productivity, there is a problem that the wafer after molding (after encapsulation) is prone to warping. When warping occurs in the wafer, it has adverse effects such as insufficient fixation of the wafer in subsequent processes such as conveyance, grinding, and singulation, and as a result, it may lead to a decrease in the reliability of the semiconductor device.

[0005] To solve such problems, various encapsulants have been studied. For example, in Patent Document 1, a liquid epoxy resin composition for encapsulation containing a liquid bisphenol type epoxy resin, silicone rubber fine particles, a silicone-modified epoxy resin, an aromatic amine curing agent, an inorganic filler, and an organic solvent is disclosed. Further, in Patent Document 2, a liquid epoxy resin composition for encapsulation containing a liquid epoxy resin, an aromatic amine curing agent, fine particles of a core-shell silicone polymer composed of a core of a solid silicone polymer and a shell of an organic polymer, an inorganic filler, and an organic solvent is disclosed.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] However, even when these epoxy resin compositions are used as compression molding materials, warping may occur in the wafer after molding (after encapsulation). Further, there is a problem that the fracture toughness of the cured product (encapsulated body) is low, cracks are likely to occur, and the expansion and progression of cracks are likely to occur.

[0008] Accordingly, an object of the present invention is to provide an epoxy resin composition that exhibits high toughness (fracture toughness) when cured and is less likely to cause warpage in the wafer after molding. Another object is to provide a cured product of the epoxy resin composition, a semiconductor device including the cured product, and a method for manufacturing the semiconductor device.

Means for Solving the Problems

[0009] As a result of intensive studies to achieve the above object, the present inventors have found that the problems can be solved by using a composition having a specific configuration. The present invention has been completed based on these findings.

[0010] That is, in the present invention, an epoxy resin (A), a curing accelerator (B), and an inorganic filler (C), and the epoxy resin composition contains as the epoxy resin (A), an epoxy resin (A-1) having a plurality of aromatic ring structures is included, the viscosity at 25°C is 1000 Pa·s or less, and the fracture toughness value (K1c) is 0.95 MPa·m 1 / 2 or more, to provide an epoxy resin composition.

[0011] The content of the epoxy resin (A-1) having a plurality of aromatic ring structures with respect to the epoxy resin (A) (100% by mass) is preferably 40% by mass or more.

[0012] The epoxy resin (A-1) having a plurality of aromatic ring structures is preferably at least one selected from the group consisting of bisphenol type epoxy resins and naphthalene type epoxy resins.

[0013] The epoxy resin (A-1) having a plurality of aromatic ring structures is preferably a bisphenol F type epoxy resin.

[0014] It is preferable that the above epoxy resin composition further contains an aminophenol type epoxy resin (A-2) as the above epoxy resin (A).

[0015] It is preferable that the above epoxy resin composition further contains a flexible epoxy resin (A-3) as the above epoxy resin (A).

[0016] It is preferable that the above curing accelerator (B) is an imidazole-based curing accelerator.

[0017] The content of the above inorganic filler (C) with respect to the above epoxy resin composition (100% by mass) is preferably 70 to 88% by mass.

[0018] It is preferable that the above epoxy resin composition substantially does not contain an elastomer.

[0019] It is preferable that the above epoxy resin composition is a liquid compression molding material.

[0020] In the present invention, a cured product of the above epoxy resin composition is also provided.

[0021] In the present invention, a support, a semiconductor element mounted on the above support, the above cured product that seals the above semiconductor element, and a semiconductor device including the above are also provided.

[0022] In the present invention, a step of supplying the above epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the above support; a step of filling the gap between the above support and the above semiconductor element with the above epoxy resin composition to form a molded body, curing the above molded body to seal the above semiconductor element, and obtaining a sealed body; and a method for manufacturing a semiconductor device including the above are also provided.

[0023] The method for manufacturing the semiconductor device preferably further includes a step of polishing the encapsulant.

Advantages of the Invention

[0024] The epoxy resin composition of the present invention has a cured product with high fracture toughness and is less likely to cause warpage in the wafer after molding. Therefore, a semiconductor device including the cured product of the epoxy resin composition exhibits high reliability.

Brief Description of the Drawings

[0025]

Figure 1

Figure 2

Embodiments for Carrying Out the Invention

[0026] <Epoxy Resin Composition> The epoxy resin composition of the present invention is an epoxy resin composition containing an epoxy resin (A), a curing accelerator (B), and an inorganic filler (C), wherein the epoxy resin (A) includes an epoxy resin (A-1) having a plurality of aromatic ring structures, has a viscosity at 25°C of 1000 Pa·s or less, and a fracture toughness value (K1c) of 0.95 MPa·m 1 / 2 or more. The epoxy resin composition may further contain one or more of a coupling agent (D) and a curing agent (E) described later. The epoxy resin composition may further contain an aminophenol type epoxy resin (A-2) as the epoxy resin (A). Further, the epoxy resin composition may further contain a flexible epoxy resin (A-3) as the epoxy resin (A). Also, the epoxy resin composition may further contain one or more of a coupling agent (D) and a curing agent (E) described later.

[0027] ·Epoxy resin (A) By containing the epoxy resin (A), the above epoxy resin composition can form a cured product having high electrical insulation. The number of epoxy groups in the epoxy resin (A) is not particularly limited as long as it is 1 or more, but it is preferably 2 or more (that is, it is a polyfunctional type epoxy resin). The epoxy resin (A) can be used alone or in combination of two or more.

[0028] The epoxy resin (A) may be liquid or solid at room temperature (25°C), but is preferably liquid from the viewpoint of the viscosity of the epoxy resin composition. Even if it is a solid epoxy resin, it can be preferably used when it shows a liquid state as a mixture by being used in combination with a liquid epoxy resin.

[0029] The epoxy resin (A) is not particularly limited. For example, bisphenol type epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, biphenol type epoxy resin, cyclohexane type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol novolak type epoxy resin, phenol novolak type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, glycidylamine type epoxy resin (glycidylamine type epoxy resin having no aromatic structure or glycidylamine type epoxy resin having an aromatic structure), glycidyl ester type epoxy resin (glycidyl ester type epoxy resin having no aromatic structure or glycidyl ester type epoxy resin having an aromatic structure), cresol novolak type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin (linear aliphatic epoxy resin having no aromatic structure or linear aliphatic epoxy resin having an aromatic structure), epoxy resin having a butadiene structure (epoxy resin having a butadiene structure having no aromatic structure or epoxy resin having a butadiene structure having an aromatic structure), alicyclic epoxy resin (alicyclic epoxy resin having no aromatic structure or alicyclic epoxy resin having an aromatic structure), heterocyclic epoxy resin, spiro ring-containing epoxy resin (spiro ring-containing epoxy resin having no aromatic structure or spiro ring-containing epoxy resin having an aromatic structure), cyclohexanedimethanol type epoxy resin (cyclohexanedimethanol type epoxy resin having no aromatic structure or cyclohexanedimethanol type epoxy resin having an aromatic structure), naphthylene ether type epoxy resin, trimethylol type epoxy resin (trimethylol type epoxy resin having no aromatic structure or trimethylol type epoxy resin having an aromatic structure), tetraphenylmethane type epoxy resin, aminophenol type epoxy resin, and aromatic or aliphatic epoxy resins such as silicone-modified epoxy resin, etc. may be mentioned.

[0030] The above epoxy resin (A-1) is an epoxy resin having a plurality of aromatic ring structures. For example, it is preferably a bisphenol type epoxy resin such as bisphenol F type epoxy resin or phenol A type epoxy resin, and more preferably bisphenol F type epoxy resin. Since the above epoxy resin (A-1) has a plurality of rigid aromatic rings in the molecule, it is preferable from the viewpoint of imparting high fracture toughness to the cured product. The above epoxy resin (A-2) is an aminophenol type epoxy resin, and is preferable from the viewpoint of being able to contribute to the adjustment of the viscosity of the above epoxy resin composition and the adjustment of the Tg of the cured product. The above epoxy resin (A-3) is a flexible epoxy resin, and is an epoxy resin containing an ester structure, a urethane bond, or a polyether bond. The above epoxy resin (A-3) is preferably an epoxy resin having a polyether bond from the viewpoint of reducing the warp of the wafer after molding. Examples of the epoxy resin having the above polyether bond include epoxy resins having a polyalkylene structure such as diglycidyl ether of polytetramethylene glycol, epoxy resins containing a polyethylene glycol structure, and bisphenol type epoxy resins containing a polypropylene glycol structure.

[0031] Specific examples of the liquid epoxy resin include "YDF-8170" (bisphenol F type epoxy resin), "YDF-8125" (bisphenol A type epoxy resin), "ZX-1658", "ZX-1658GS" (liquid 1,4-glycidylcyclohexane) manufactured by Nippon Steel Chemical & Material Co., Ltd., "HP-4032", "HP-4032D", "HP-4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation, "jER828US", "jER828EL" (bisphenol A type epoxy resin), "jER806", "jER807" (bisphenol F type epoxy resin), "jER152" (phenol novolac type epoxy resin), "jER630", "jER630LSD", "EP3980S" (aminophenol type epoxy resin), "YX7400" (diglycidyl ether of polytetramethylene glycol) manufactured by Mitsubishi Chemical Corporation, "ZX1059" (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., "EX-721" (glycidyl ester type epoxy resin) manufactured by Nagase ChemteX Corporation, EX171 (lauryl alcohol (EO) 15 glycidyl ether) manufactured by Chuo Kasei Co., Ltd., Adeka Resin EP4005 (bisphenol A type epoxy resin containing a polypropylene glycol structure) manufactured by ADEKA Corporation, AER9000 (PO-modified bisphenol type epoxy resin) manufactured by Asahi Kasei Corporation, and "Celloxide 2021P" (alicyclic epoxy resin) manufactured by Daicel Corporation can be mentioned.

[0032] Specific examples of the solid epoxy resin include "HP-4032H" (naphthalene-type epoxy resin), "HP-4700", "HP-4710" (naphthalene-type tetrafunctional epoxy resin), "N-690" (cresol novolak-type epoxy resin), "N-695" (cresol novolak-type epoxy resin), "HP-7200", "HP-7200L", "HP-7200HH", "HP-7200H", "HP-7200HHH" (dicyclopentadiene-type epoxy resin), "EXA850CRP", "EXA7311", "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", "HP6000" (naphthylene ether-type epoxy resin) manufactured by DIC Corporation; "EPPN-502H" (trisphenol-type epoxy resin), "NC-7000-L" (naphthol novolak-type epoxy resin), "NC-3000-H", "NC-3000", "NC-3000-L", "NC-3100" (biphenyl-type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "ESN475V" (naphthol-type epoxy resin), "ESN485" (naphthol novolak-type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "YX4000H", "YL6121" (biphenyl-type epoxy resin), "YX4000HK" (bixylenol-type epoxy resin), "YL7760" (bisphenol AF-type epoxy resin), "YX8800" (anthracene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "PG-100", "CG-500" manufactured by Osaka Gas Chemical Co., Ltd.; "YL7800" (fluorene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1010" (solid bisphenol A-type epoxy resin), "jER1031S" (tetraphenylethane-type epoxy resin), "jER157S70" (bisphenol novolak-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX4000HK" (bixylenol-type epoxy resin), "YX8800" (anthracene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "PG-100", "CG-500" manufactured by Osaka Gas Chemical Co., Ltd.; "YL7800" (fluorene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; and "jER1031S" (tetraphenylethane-type epoxy resin) manufactured by Mitsubishi Chemical Corporation.

[0033] The epoxy equivalent of the epoxy resin (A) is not particularly limited, but for example, it is preferably 30 to 1000 g / eq, more preferably 40 to 500 g / eq, and even more preferably 50 to 300 g / eq.

[0034] The content of the epoxy resin (A) with respect to the above epoxy resin composition (100% by mass) is not particularly limited, but for example, it is preferably 3% by mass or more, more preferably 6% by mass or more, even more preferably 9% by mass or more, particularly preferably 12% by mass or more, and most preferably 15% by mass or more. Also, for example, it is preferably 60% by mass or less, more preferably 50% by mass or less, even more preferably 40% by mass or less, particularly preferably 35% by mass or less, and most preferably 30% by mass or less. When the content of the epoxy resin (A) is within the above range, the thermal expansibility of the cured product is reduced, and the fracture toughness tends to improve.

[0035] The content of the above epoxy resin (A-1) with respect to the epoxy resin (A) (100% by mass) is not particularly limited, but for example, it is preferably 40% by mass or more. Also, for example, it is preferably 80% by mass or less, more preferably 75% by mass or less. When the content of the above epoxy resin (A-1) is within the above range, the fracture toughness of the cured product tends to improve more.

[0036] · Curing accelerator (B) The curing accelerator (B) has the property of promoting the curing of the epoxy resin. The curing accelerator is not particularly limited, and examples thereof include imidazole-based curing accelerators, tertiary amine-based curing accelerators, phosphorus-based curing accelerators, and the like. Among these, imidazole-based curing accelerators are preferable from the viewpoint of reliability (thermal cycle resistance). The curing accelerator (B) can be used alone or in combination of two or more.

[0037] Examples of imidazole-based curing accelerators include imidazole compounds such as 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine. Commercially available products include 2-phenyl-4-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name "2P4MZ"), 2-phenyl-4-methyl-5-hydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name "2P4MHZ-PW"), and 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name "2MZA-PW"). Encapsulated imidazoles called microcapsule-type imidazoles or epoxy adduct-type imidazoles may also be used. Commercially available products include "HX3941HP", "HXA3942HP", "HXA3922HP", "HXA3792", "HX3748", "HX3721", "HX3722", "HX3088", "HX3741", "HX3742", "HX3613" (all manufactured by Asahi Kasei Chemicals Corporation), "PN-23J", "PN-40J", "PN-50" (manufactured by Ajinomoto Fine-Techno Co., Inc.), FXR-1121 (manufactured by Fuji Kasei Kogyo Co., Ltd.), etc.

[0038] Examples of the tertiary amine-based curing accelerators include benzyl dimethylamine, 2-(dimethylaminomethyl)phenol, 2,4,6-tris(dimethylaminomethyl)phenol, tetramethylguanidine, triethanolamine, N,N'-dimethylpiperazine, triethylenediamine, 1,8-diazabicyclo[5.4.0]undecene, 1,5-diazabicyclo[4.3.0]nonene, and salts thereof. Examples of the above salts include formate, octylate, p-toluenesulfonate, o-phthalate, phenolate, or phenol novolak resin salt of 1,8-diazabicyclo[5.4.0]undecene, and formate, octylate, p-toluenesulfonate, o-phthalate, phenolate, or phenol novolak resin salt of 1,5-diazabicyclo[4.3.0]nonene.

[0039] Examples of the phosphorus-based curing accelerators include phosphorus compounds such as triphenylphosphine, tri-p-tolylphosphine, tetraphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane, 1,2-bis-(diphenylphosphino)ethane.

[0040] The content of the curing accelerator (B) relative to the above epoxy resin composition (100% by mass) is not particularly limited. For example, it is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and particularly preferably 0.2% by mass or more. Also, for example, it is preferably 5.0% by mass or less, more preferably 4.0% by mass or less, still more preferably 3.0% by mass or less, and particularly preferably 2.5% by mass or less.

[0041] The content of the curing accelerator (B) relative to the epoxy resin composition (100% by mass) excluding the inorganic filler (C) is not particularly limited. For example, it is preferably 1.0% by mass or more, more preferably 2.0% by mass or more, still more preferably 2.5% by mass or more, and particularly preferably 3.0% by mass or more. Also, for example, it is preferably 8.0% by mass or less, more preferably 6.0% by mass or less, still more preferably 5.0% by mass or less, and particularly preferably 4.5% by mass or less.

[0042] · Inorganic filler (C) The inorganic filler (C) is not particularly limited, but preferably has the following characteristics: (1) it has the property of suppressing the volume shrinkage (curing shrinkage) caused by the curing reaction of the epoxy resin composition; (2) it has the property of suppressing the volume change (thermal shrinkage) of the cured product due to heating, that is, it has the effect of lowering the linear expansion coefficient by addition; or (3) it has both of these characteristics.

[0043] Examples of the inorganic filler (C) include silica (silicon dioxide), silicon carbide, silicon nitride, alumina (aluminum oxide), aluminum nitride, aluminum hydroxide, aluminum silicate, magnesium silicate, calcium silicate, calcium carbonate, barium sulfate, barium carbonate, titanium oxide, gypsum, potassium titanate, magnesium carbonate, zinc oxide, boron nitride, zirconia (zirconium oxide), and inorganic particles with their surfaces treated. Among these, silica is preferred from the viewpoint of being able to increase the filling amount. The inorganic filler (C) can be used alone or in combination of two or more.

[0044] The inorganic filler (C) is preferably surface-treated with a coupling agent having a functional group such as an epoxy group, a (meth)acryloyl group, or an amino group (especially a phenylamino group) from the viewpoint of making the viscosity of the epoxy resin composition fall within an appropriate range. Examples of the coupling agent include silane coupling agents such as 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane. For the surface treatment of the inorganic filler (C), one kind of the above coupling agent can be used alone, or two or more kinds can be used in combination.

[0045] The shape of the inorganic filler (C) is not particularly limited, and examples thereof include spherical (true spherical, substantially true spherical, etc.), polyhedral, rod-shaped (cylindrical, prismatic, etc.), flat plate-shaped, flaky, and irregular shapes. Among these, spherical is preferable from the viewpoint of achieving a high filling amount.

[0046] The average particle diameter of the inorganic filler (C) is not particularly limited, but for example, 1 nm to 15 μm is preferable, more preferably 0.1 to 10 μm, and even more preferably 0.2 to 5 μm. When the average particle diameter of the inorganic filler (C) is within the above range, since the particle diameter is not too large, the filling property of the epoxy resin composition tends to be high even in a narrow gap. Note that two or more kinds of fillers having different average particle diameters may be used in combination for the purpose of adjusting the viscosity of the epoxy resin composition. In this specification, the method for measuring the average particle diameter of the inorganic filler (C) is not particularly limited, but for example, it can be measured using a laser diffraction / scattering particle size distribution measuring device (product name: LS 13 320, manufactured by Beckman Coulter, Inc.).

[0047] Although the content of the inorganic filler (C) with respect to the above epoxy resin composition (100% by mass) is not particularly limited, for example, it is preferably 40% by mass or more, more preferably 50% by mass or more, still more preferably 60% by mass or more, and particularly preferably 70% by mass or more. Also, for example, it is preferably 95% by mass or less, more preferably 90% by mass or less, and still more preferably 88% by mass or less. When the content of the inorganic filler (C) is within the above range, the filling property and workability of the epoxy resin composition into the gap are improved, and the thermal expansibility of the cured product is reduced, and the warp of the wafer after molding tends to be reduced.

[0048] · Coupling agent (D) When the above epoxy resin composition contains a coupling agent (D), the adhesiveness to the support and semiconductor elements included in the semiconductor device tends to be improved when it is made into a cured product. When the adhesiveness between the support and the cured product is improved, warpage is less likely to occur in the wafer after molding.

[0049] The coupling agent (D) is not particularly limited. For example, silane coupling agents such as vinyl-based, glycidoxy-based, (meth)acrylic-based, amino-based, mercapto-based, or imidazole-based; titanium coupling agents such as alkoxide-based, chelate-based, or acylate-based; and various coupling agents such as long-chain spacer type coupling agents such as glycidoxy octyltrimethoxysilane or methacrylo octyltrimethoxysilane can be mentioned. The coupling agent (D) can be used alone or in combination of two or more.

[0050] Examples of the above silane coupling agent include 3-isocyanatopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, etc.

[0051] Although the content of the coupling agent (D) relative to the above epoxy resin composition (100% by mass) is not particularly limited, for example, it is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and particularly preferably 0.15% by mass or more. Also, for example, it is preferably 5.0% by mass or less, more preferably 3.0% by mass or less, still more preferably 2.0% by mass or less, and particularly preferably 1.0% by mass or less.

[0052] · Hardening agent (E) The hardening agent (E) is not particularly limited as long as it can initiate, proceed, or accelerate the polymerization of the epoxy resin. Examples include amine-based hardening agents, acid anhydride-based hardening agents, and phenol-based hardening agents. The hardening agent (E) can be used alone or in combination of two or more.

[0053] Examples of the above amine-based hardening agents include aromatic amines such as 4,4'-diamino-3,3'-diethyldiphenylmethane, diethyltoluenediamine, dimethylthiotoluenediamine, methylenedianiline, m-phenylenediamine, 4,4'-diaminodiphenylsulfone, and 3,3'-diaminodiphenylsulfone. Examples of the above acid anhydride-based hardening agents include alkylated tetrahydrophthalic anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, phthalic anhydride, dodecenyl succinic anhydride, and methyl nadic anhydride. Examples of the above phenol-based hardening agents include phenol novolac resin, cresol novolac resin, naphthol-modified phenol resin, dicyclopentadiene-modified phenol resin, and p-xylene-modified phenol resin. Among the above amine-based hardening agents, aromatic amines are preferred.

[0054] Although the equivalent weight (molecular weight per functional group) of the hardening agent (E) is not particularly limited, for example, it is preferably 10 to 600 g / eq, more preferably 20 to 400 g / eq, and still more preferably 30 to 200 g / eq.

[0055] The content of the curing agent (E) relative to the epoxy resin composition (100% by mass) of the present invention is not particularly limited. For example, it is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, still more preferably 0.5% by mass or more, and particularly preferably 1.0% by mass or more. Also, for example, it is preferably 5.0% by mass or less, more preferably 4.0% by mass or less, still more preferably 3.0% by mass or less, and particularly preferably 2.0% by mass or less. When the content of the curing agent (E) is within the above range, the thermal expansibility of the cured product is reduced, and the fracture toughness tends to improve.

[0056] The content of the curing agent is not particularly limited, but the stoichiometric equivalent ratio (curing agent equivalent / epoxy group equivalent) with the epoxy resin (A) is preferably an amount such that, for example, it is 0.01 to 1.00, more preferably an amount such that the equivalent ratio is 0.04 to 0.50, and still more preferably an amount such that the equivalent ratio is 0.08 to 0.30.

[0057] ·Elastomer (F) The epoxy resin composition of the present invention may further contain an elastomer (F), but from the viewpoint of reliability, the content of the elastomer (F) is preferably small to some extent, and more preferably it is substantially not contained. The reason for this is that while the elastomer (F) can impart toughness to the cured product, it causes an increase in the viscosity of the epoxy resin composition. That is, when the viscosity of the epoxy resin composition increases, the inorganic filler (C) cannot be sufficiently blended. When such an epoxy resin composition is used as a compression molding material, warping of the wafer after molding is likely to occur, so there is a possibility that the problems of the present invention cannot be achieved.

[0058] Therefore, the content of the elastomer (F) relative to the above epoxy resin composition (100% by mass) is preferably, for example, 1.0% by mass or less, more preferably 0.1% by mass or less, still more preferably 0.01% by mass or less, and particularly preferably 0.001% by mass or less, and it is particularly preferred that it is substantially not contained.

[0059] The elastomer (F) is not particularly limited, and examples thereof include butadiene-based elastomers, silicone-based elastomers, acrylic copolymers, styrene-butadiene-based elastomers, and the like. The elastomer (F) can be used alone or in combination of two or more.

[0060] The elastomer (F) may be core-shell rubber particles. That is, it may be a core-shell rubber type elastomer. The core-shell rubber particles refer to rubber particles composed of a core part and one or more shell layers covering the core part.

[0061] · Other component (G) The above epoxy resin composition may contain components other than the epoxy resin (A), the curing accelerator (B), the inorganic filler (C), the coupling agent (D), the curing agent (E), and the elastomer (F) (hereinafter referred to as "other component (G)"). Examples of the other component (G) include curable compounds other than the epoxy resin (A), thermoplastic resins such as polyethylene resin, polyester resin, polyurethane resin, and polyamide resin, surfactants, ion trap agents, leveling agents, antioxidants, defoaming agents, flame retardants, colorants such as carbon black, reactive diluents, solvents, and the like. The other component (G) can be used alone or in combination of two or more.

[0062] The content of the other component (G) with respect to the above epoxy resin composition (100% by mass) is not particularly limited as long as the effects of the present invention are not impaired. For example, it is preferably 10% by mass or less, more preferably 5% by mass or less, still more preferably 3% by mass or less, and particularly preferably 1% by mass or less. Also, for example, it is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, and still more preferably 0.1% by mass or more.

[0063] (Physical properties and production method of epoxy resin composition) The viscosity of the above epoxy resin composition at 25°C is not particularly limited as long as it is 1000 Pa·s or less. For example, 1 to 1000 Pa·s is preferable, more preferably 5 to 980 Pa·s, still more preferably 10 to 960 Pa·s, and particularly preferably 50 to 950 Pa·s. When the viscosity is within the above range, the filling property of the epoxy resin composition into the gap and the workability are improved, and the warp of the wafer after molding tends to be reduced. The above viscosity can be measured as the viscosity when rotated at 10 rpm for 1 minute at a liquid temperature of 25°C using a Brookfield viscometer as in the examples described below.

[0064] The above epoxy resin composition can be prepared by known and conventional methods. For example, at least one selected from the group consisting of an epoxy resin (A), a curing accelerator (B), and an inorganic filler (C), and, if necessary, a coupling agent (D), a curing agent (E), an elastomer (F), and other components (G) are introduced into an appropriate mixer simultaneously or separately, and heated if necessary to melt while stirring and mixing to obtain the above epoxy resin composition. When the epoxy resin (A) is solid, it is preferably liquefied or fluidized by heating for mixing. When it is difficult to uniformly disperse the inorganic filler (C) in the epoxy resin composition, the epoxy resin (A) and the inorganic filler (C) are heated and mixed to uniformly disperse the inorganic filler (C) in the epoxy resin (A), then cooled if necessary, and further components such as the curing agent (E) are mixed to prepare the above epoxy resin composition.

[0065] The above mixer is not particularly limited, and examples include a roll mill, a Lycra machine, a Henschel mixer, a tumbler, a self-revolving and planetary mill, a planetary mixer, etc. equipped with a stirring device and a heating device. The mixing ratio of each component is appropriately set according to the content ratio of each component in the epoxy resin composition.

[0066] The above epoxy resin composition can be preferably used as a material (epoxy resin composition for semiconductor encapsulation) for encapsulating materials such as semiconductor elements, wirings, and solder (solder bumps) mounted on a support in a semiconductor device. By using the above epoxy resin composition as an epoxy resin composition for semiconductor encapsulation, a highly reliable encapsulant can be manufactured. Further, the above epoxy resin composition can be preferably used as a material (epoxy resin composition for flip-chip type semiconductor encapsulation) for encapsulating semiconductor elements and the like mounted on a support in a flip-chip type semiconductor device. Specifically described, by filling the gap between a semiconductor element or the like and the support with the above epoxy resin composition and curing it, while encapsulating the bumps present in the gap, the semiconductor element and the support are fixed to each other as an encapsulant, thereby improving the thermal cycle resistance.

[0067] The above epoxy resin composition is used, for example, as an underfill such as capillary underfill, liquid mold underfill, secondary underfill, pre-supplied type underfill, a grab top material, or a liquid compression molding material. Among these, when the above epoxy resin composition is used as a liquid compression molding material, it is preferable in that the obtained encapsulant (cured product) exhibits high fracture toughness and the property that warpage of the wafer after molding hardly occurs is sufficiently exhibited. Further, the above epoxy resin composition is not limited to the use as the above epoxy resin composition for semiconductor encapsulation, and can be used, for example, as an adhesive for fixing, joining, or protecting components constituting electronic components.

[0068] <Cured product> A cured product is formed by curing the above epoxy resin composition. The curing method is not particularly limited, but is performed, for example, by subjecting the epoxy resin composition to a heat treatment. The temperature of the heat treatment is not particularly limited, but is preferably, for example, 60 to 200°C, more preferably 80 to 180°C. The time of the heat treatment is not particularly limited, but is preferably, for example, 0.1 to 5 hours, more preferably 0.5 to 3 hours.

[0069] The fracture toughness value (K1c) of the cured product is 0.95 MPa·m 1 / 2 or more, although not particularly limited. For example, 1.0 MPa·m 1 / 2 or more is preferable, more preferably 1.05 MPa·m 1 / 2 or more, still more preferably 1.1 MPa·m 1 / 2 or more, particularly preferably 1.2 MPa·m 1 / 2 or more. When the fracture toughness value (K1c) is within the above range, cracks are less likely to occur in the obtained cured product, and even if cracks occur, they tend not to expand or progress easily, so the reliability is excellent. The fracture toughness value (K1c) can be measured, for example, by the method described in the examples below.

[0070] <Semiconductor Device and Method for Manufacturing the Same> The semiconductor device of the present invention includes a support, a semiconductor element mounted on the support, and a cured product of the epoxy resin composition that seals the semiconductor element. The semiconductor device is preferably a flip chip type semiconductor device. The flip chip type semiconductor device has a structure in which an electrode portion on the support and the semiconductor element are connected via bump electrodes. Further, in the semiconductor device, the gap between the semiconductor element and the support is sealed by the cured product (sealing body) of the epoxy resin composition.

[0071] The method for manufacturing a semiconductor device of the present invention includes a step of supplying the epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support (hereinafter referred to as the "composition supply step"), a step of filling the gap between the support and the semiconductor element with the epoxy resin composition to form a molded body, curing the molded body to seal the semiconductor element, and obtaining a sealing body (hereinafter referred to as the "molding / sealing step"), and is characterized by including the above steps.

[0072] The method for manufacturing a semiconductor device of the present invention may further include a step of polishing the encapsulant (hereinafter referred to as the "grinding step"). Further, it may include at least one selected from the group consisting of the laminate preparation step and the singulation step described below.

[0073] (Laminate Preparation Step) The laminate preparation step is a step of preparing a laminate including a support and a semiconductor element mounted on the support by mounting the semiconductor element on the support. In the laminate, the support and the semiconductor element may be connected via solder, or may be connected using an adhesive film such as a die attach film (DAF) or an adhesive sheet. The support is not particularly limited, and examples thereof include a silicon wafer, a silicon carbide wafer, a sapphire wafer, a compound semiconductor wafer (gallium phosphide, gallium arsenide, indium phosphide, gallium nitride), and a glass epoxy substrate. The shape of the support in plan view is not particularly limited, and for example, it is circular or rectangular.

[0074] (Composition Supply Step) The composition supply step is a step of supplying the epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support.

[0075] This step may include a step of attaching a mold used for forming a molded body in the molding and encapsulation step to the laminate. That is, the composition supply step may be a step of supplying the epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support, and then attaching the mold to the laminate.

[0076] Further, this step may be a step of supplying the epoxy resin composition to a mold used for forming a molded body in the molding and encapsulation step, and then attaching a laminate including a support and a semiconductor element mounted on the support to the mold. By adopting such a step, the epoxy resin composition can be supplied onto a laminate including a support and a semiconductor element mounted on the support.

[0077] (Forming and Sealing Process) The forming and sealing process is a process of filling the gap between the above-mentioned support and the above-mentioned semiconductor element with the above-mentioned epoxy resin composition to form a molded body, curing the molded body to seal the above-mentioned semiconductor element, and obtaining a sealed body. This process may include two processes: a process of filling the gap between the above-mentioned support and the above-mentioned semiconductor element with the above-mentioned epoxy resin composition to form a molded body (forming process), and a process of curing the molded body obtained by the forming process to seal the above-mentioned semiconductor element and obtaining a sealed body (sealing process).

[0078] The method for forming the molded body is not particularly limited. For example, a mold attached to the laminate is pushed into the direction of the laminate (support), and if necessary, the inside of the mold is depressurized to fill the gap between the above-mentioned support and the above-mentioned semiconductor element with the above-mentioned epoxy resin composition, and a compression molded body including the above-mentioned laminate and the epoxy resin composition is formed. In this process, instead of pushing the mold into the direction of the laminate (support), the laminate (support) may be pushed into the direction of the mold, or a mode in which the mold and the laminate (support) are narrowed toward each other may be adopted.

[0079] As a method for forming the molded body, for example, using a molding device, the epoxy resin composition whose viscosity is reduced by heating as necessary is depressurized, and the laminate is sealed with the above-mentioned epoxy resin composition to obtain a molded body.

[0080] When curing the above-mentioned molded body to seal the above-mentioned semiconductor element, the curing of the epoxy resin composition may be carried out by heating. The curing temperature is not particularly limited, but for example, it is preferably 110 to 200 °C, more preferably 120 to 150 °C. The curing time is not particularly limited, but for example, 30 minutes to 7 hours is preferable, more preferably 1 to 6 hours, still more preferably 1 to 4 hours, and particularly preferably 1 to 2 hours.

[0081] (Grinding Process) The grinding process is a process of polishing the encapsulated body obtained by the molding and encapsulation process. More specifically, in order to planarize and thin the encapsulated body, the surface of the encapsulated body on the semiconductor element side is ground, and a part of the semiconductor element is exposed as necessary. The method of the grinding process is not particularly limited, and commercially available grinding wheels and grinding devices can be used.

[0082] (Dicing process) The dicing process is a process of dicing the encapsulated body obtained by the molding and encapsulation process or the encapsulated body ground by the grinding process. The dicing process may be a process of dicing the encapsulated body after removing it from the above mold. In the dicing process, the gaps between a plurality of semiconductor elements mounted on the above support and encapsulated by the cured product of the epoxy resin composition are cut using means such as a dicing blade or a laser to obtain a semiconductor device. The method of dicing is not particularly limited, and commercially available dicing devices can be used.

[0083] Hereinafter, embodiments of the method for manufacturing a semiconductor device will be described with reference to FIGS. 1 and 2, but the present invention is not limited thereto.

[0084] FIG. 1 shows one embodiment of the method for manufacturing a semiconductor device of the present invention. Hereinafter, this embodiment will be described with reference to FIG. 1. Mount a semiconductor element 1 having solder bumps 2 on one surface on a support 3, and prepare a laminate 4 including the semiconductor element 1, the solder bumps 2, and the support 3 in this order (laminate preparation step, (a)). After supplying an epoxy resin composition 5 onto the semiconductor element 1 of the laminate 4 using a nozzle 6, attach a mold 7 (composition supply steps, (b) and (c)). Push the attached mold 7 in the direction of the support 3, and, if necessary, reduce the pressure inside the mold 7 to form a compression molded body 8 including the laminate 4 and the epoxy resin composition 5 (molding step, (d)). In this step, instead of pushing the mold 7 in the direction of the support 3, the support 3 may be pushed in the direction of the mold 7, or a mode of narrowing the mold 7 and the support 3 with respect to each other may be adopted. In this step, the gap between the support 3 and the semiconductor element 1 is filled with the epoxy resin composition 5 to obtain the compression molded body 8. By thermally curing the compression molded body 8 to seal the semiconductor element 1, a sealed body 9 is formed (sealing step, (e)). After removing the mold 7, singulate the sealed body 9 including the semiconductor element 1 (singulation steps, (f) and (g)).

[0085] FIG. 2 shows another embodiment of the method for manufacturing a semiconductor device of the present invention. Hereinafter, this embodiment will be described with reference to FIG. 2. Mount a semiconductor element 11 having solder bumps 12 on one surface on a support 13, and prepare a laminate 14 including the semiconductor element 11, the solder bumps 12, and the support 13 in this order (laminate preparation step, (a)). After supplying an epoxy resin composition 15 into a mold 17 using a nozzle 16, attach the laminate 14 to the mold (composition supply steps, (b) and (c)). Reduce the pressure inside the mold 17 to form a compression molded body 18 including the laminate 14 and the epoxy resin composition 15 (molding step, (d)). In this step, the gap between the support 13 and the semiconductor element 11 is filled with the epoxy resin composition 15 to obtain the compression molded body 18. By thermally curing the compression molded body 18 to seal the semiconductor element 11, a sealed body 19 is formed (sealing step, (e)). After removing the mold 17, singulate the sealed body 19 including the semiconductor element (singulation steps, (f) and (g)).

Example

[0086] The present invention will be described in more detail below based on examples, but the present invention is not limited by the examples.

[0087] Epoxy resin compositions of Examples 1 to 12 and Comparative Examples 1 to 3 were prepared by appropriately selecting and mixing one or more selected from the group consisting of epoxy resin (A), curing accelerator (B), inorganic filler (C), and, if necessary, coupling agent (D), curing agent (E), elastomer (F), and other components (G) so as to have the blending ratios shown in Table 1. The numerical values for each component in Table 1 indicate parts by mass.

[0088] Each component in Table 1 will be described below. · Epoxy resin (A) YDF-8170 (product name): Bisphenol F type epoxy resin, epoxy equivalent 158 g / eq, liquid at 25°C, manufactured by Nippon Steel Chemical & Material Co., Ltd. EXA-835LV (product name): Bisphenol A type epoxy resin, epoxy equivalent 163 g / eq, liquid at 25°C, manufactured by DIC Corporation. HP-4032D (product name): Naphthalene type epoxy resin, epoxy equivalent 140 g / eq, liquid at 25°C, manufactured by DIC Corporation. jER630 (product name): Aminophenol type epoxy resin, epoxy equivalent 98 g / eq, liquid at 25°C, manufactured by Mitsubishi Chemical Corporation. Epogose PT (product name): Aliphatic epoxy resin (polytetramethylene glycol diglycidyl ether), epoxy equivalent 435 g / eq, liquid at 25°C, manufactured by Yokkaichi Gosei Co., Ltd. · Curing accelerator (B) 2MZA-PW (product name): 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, manufactured by Shikoku Kasei Kogyo Co., Ltd. 2P4MZ (product name): 2-phenyl-4-methylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd. 2P4MHZ-PW (product name): 2-phenyl-4-methyl-5-hydroxymethylimidazole, manufactured by Shikoku Kasei Kogyo Co., Ltd. · Inorganic filler (C) SE605G-SMG (Product Name): Silicon dioxide surface-treated with 3-methacryloxypropyltrimethoxysilane, average particle size 1.8 μm, top cut 5 μm, manufactured by Admatechs Co., Ltd. SE101G-SMO (Product Name): Silicon dioxide surface-treated with 3-methacryloxypropyltrimethoxysilane, average particle size 0.3 μm, top cut 1 μm, manufactured by Admatechs Co., Ltd. YA050C-SM1 (Product Name): Silicon dioxide surface-treated with 3-methacryloxypropyltrimethoxysilane, average particle size 0.05 μm, manufactured by Admatechs Co., Ltd. · Coupling Agent (D) KBE-9007N (Product Name): 3-Isocyanatopropyltriethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd. · Hardening Agent (E) MEH-8005 (Product Name): Phenolic hardening agent, hydroxyl equivalent 139 - 143 g / eq, manufactured by Meiwafosis Co., Ltd. ETHACURE100 Plus (Product Name): Amine-based hardening agent (diethyltoluenediamine), manufactured by Albemarle Corporation HN-2200 (Product Name): Acid anhydride-based hardening agent (3 or 4-methyl-1,2,3,6-tetrahydrophthalic anhydride), manufactured by Resona Co., Ltd. · Elastomer (F) MX-137: Product Name / Kaneka MX-137, manufactured by Kaneka Corporation, bisphenol F type epoxy resin containing core-shell type butadiene-based elastomer (mass ratio of bisphenol F type epoxy resin to core-shell type butadiene-based elastomer is 67:33), epoxy equivalent is 227 MX-965: Product Name / Kaneka MX-965, manufactured by Kaneka Corporation, bisphenol F type epoxy resin containing core-shell type silicone-based elastomer (mass ratio of bisphenol F type epoxy resin to core-shell type silicone-based elastomer is 75:25), epoxy equivalent is 224

[0089] [Evaluation 1: Measurement of Fracture Toughness Value - K1c] The epoxy resin compositions of Examples 1 to 12 and Comparative Examples 1 to 3 were heat-cured at 150°C for 2 hours to prepare test pieces with a length of 75 mm × width of 14 mm × thickness of 7 mm. Using the obtained test pieces, a Shimadzu autograph AG-IS (manufactured by Shimadzu Corporation) was used, and based on ASTM D5045, the fracture toughness value K1c (MPa·m 1 / 2 ) was measured at 25°C. The distance between the fulcrums during the measurement was 56 mm, and the pre-cracks were 7.4 to 8.3 mm. The results are described in "K1c (MPa·m 1 / 2 )" in Table 1.

[0090] [Evaluation 2: Measurement of viscosity at 25°C] Regarding the viscosity (Pa·s) at 25°C immediately after preparation of the epoxy resin compositions of Examples 1 to 12 and Comparative Examples 1 to 3, a Brookfield viscometer (model number: HB-DV1, manufactured by Brookfield Corporation) was used, and the viscosity when rotated at 10 rpm for 1 minute at a liquid temperature of 25°C was measured. The results are described in "Viscosity at 25°C (Pa·s)" in Table 1.

[0091] [Evaluation 3: Measurement of adhesive strength] On a 10 mm square silicon chip, the epoxy resin compositions of Examples 1 to 12 and Comparative Examples 1 to 3 were adhered using a mold so as to have a frustum shape with a bottom diameter of 5 mm, a top diameter of 3 mm, and a height of 6 mm, and heat-cured at 150°C for 2 hours to prepare test pieces. The resin part of this test piece was pushed off by a bond tester (Dage 4000, manufactured by Nordson Advanced Technology Corporation), and the shear adhesive strength (Mpa) was measured. The results are described in "Adhesive strength (Mpa)" in Table 1.

[0092] [Evaluation 4: Measurement of coefficient of thermal expansion (CTE)] The epoxy resin compositions of Examples 1 to 12 and Comparative Examples 1 to 3 were heat-cured at 150°C for 2 hours to prepare test pieces. Using a TMA4000SA series from Bruker ASX, the coefficient of thermal expansion was measured at 0 to 40°C by thermomechanical analysis (TMA). The results are shown in "CTE (ppm / °C)" in Table 1.

[0093] (Evaluation 5: Measurement of warpage) The epoxy resin compositions of Examples 1 to 12 and Comparative Examples 1 to 3 were applied onto a circular silicon wafer with a diameter of 300 mm and a thickness of 300 μm. Then, using a mold, a layer made of the above composition with a diameter of 292 mm and a thickness of 100 μm was formed and heat-cured at 150°C for 2 hours to prepare a test piece. The warpage (μm) of this test piece was measured using a shadow moire type warpage measuring device (ThermoRay AXP2.0, manufactured by Thermo Precision Co., Ltd.). Note that the warpage means the maximum value of the warpage formed by the test piece. The results are shown in "Warpage (μm)" in Table 1.

[0094]

Table 1

Explanation of symbols

[0095] 1 Semiconductor element 2 Solder bump 3 Support 4 Laminate 5 Epoxy resin composition 6 Nozzle 7 Mold 8 Compression molded body 9 Sealing body 11 Semiconductor element 12 Solder bump 13 Support 14 Laminate 15 Epoxy resin composition 16 Nozzle 17 Mold 18 Compression molded body 19 Sealing body

Claims

1. An epoxy resin composition comprising an epoxy resin (A), a curing accelerator (B), and an inorganic filler (C), wherein the epoxy resin (A) includes an epoxy resin (A-1) having a plurality of aromatic ring structures, the viscosity at 25°C is 1000 Pa·s or less, The fracture toughness value (K1c) is 0.95 MPa·m 1 / 2 or more epoxy resin composition.

2. The epoxy resin composition according to claim 1, wherein the content of the epoxy resin (A-1) having a plurality of aromatic ring structures with respect to the epoxy resin (A) (100% by mass) is 40% by mass or more.

3. The epoxy resin composition according to claim 1 or 2, wherein the epoxy resin (A-1) having a plurality of aromatic ring structures is at least one selected from the group consisting of bisphenol type epoxy resins and naphthalene type epoxy resins.

4. The epoxy resin composition according to claim 1 or 2, wherein the epoxy resin (A-1) having a plurality of aromatic ring structures is a bisphenol F type epoxy resin.

5. The epoxy resin composition according to claim 1 or 2, wherein the epoxy resin (A) further includes an aminophenol type epoxy resin (A-2).

6. The epoxy resin composition according to claim 1 or 2, wherein the epoxy resin (A) further includes a flexible epoxy resin (A-3).

7. The epoxy resin composition according to claim 1 or 2, wherein the curing accelerator (B) is an imidazole-based curing accelerator.

8. The epoxy resin composition according to claim 1 or 2, wherein the content of the inorganic filler (C) with respect to the epoxy resin composition (100% by mass) is 70 to 88% by mass.

9. The epoxy resin composition according to claim 1 or 2, which substantially does not contain an elastomer.

10. The epoxy resin composition according to claim 1 or 2, which is a liquid compression molding material.

11. A cured product of the epoxy resin composition according to claim 1 or 2.

12. A semiconductor device comprising a support, a semiconductor element mounted on the support, and the cured product according to claim 11 for encapsulating the semiconductor element.

13. A step of supplying the epoxy resin composition according to claim 1 or 2 onto a laminate comprising a support and a semiconductor element mounted on the support; a step of filling the gap between the support and the semiconductor element with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor element, and obtaining a sealed body. A method for manufacturing a semiconductor device, comprising the above steps.

14. The method of manufacturing a semiconductor device according to claim 13, further comprising a step of polishing the sealing body.

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