Semiconductor device

Abstract

To provide a semiconductor device capable of handling a larger current and having improved manufacturing efficiency.SOLUTION: A semiconductor device A20 includes a first conductive plate 11, a second conductive plate 12, a plurality of semiconductor elements 20, and a conductive member (first conductive member 31). The conductive member includes a main body unit 311, a plurality of first junction portions 312, a second junction portion 314, a first connection portion 313, and a second connection portion 315. The plurality of first junction portions 312 each include an overlapping area that overlaps with an electrode (second electrode 212) of one of the plurality of semiconductor elements 20, as viewed along a thickness direction. The plurality of semiconductor elements 20 are arranged along a second direction y. The main body unit 311 extends along the second direction y. The first connection portion 313 includes a plurality of connection areas 313A located apart from each other in the second direction y. The plurality of connection areas 313A are individually connected to the plurality of first junction portions 312.SELECTED DRAWING: Figure 25

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device on which a plurality of semiconductor elements such as switching elements are mounted.

Background Art

[0002] A semiconductor device on which a plurality of switching elements for converting current based on an electric signal are mounted is widely known. Such a semiconductor device is used in a power conversion circuit such as an inverter, for example. Patent Document 1 discloses an example of a semiconductor device on which a plurality of switching elements are mounted. The semiconductor device includes a plurality of switching elements (semiconductor chips) joined to a first metal pattern. Each of the plurality of switching elements has a bottom electrode and a top electrode. The bottom electrode is electrically joined to the first metal pattern. One end of each of the plurality of wires is electrically joined to the top electrode. The other end of each of the plurality of wires is electrically joined to a second metal pattern located adjacent to the first metal pattern.

[0003] In the semiconductor device disclosed in Patent Document 1, the conduction between the plurality of switching elements and the second metal pattern is made by a plurality of wires. For this reason, the semiconductor device has a configuration that is not suitable for passing a larger current. Further, each of the plurality of wires is individually joined to the top electrode of the plurality of switching elements and the second metal pattern. For this reason, since it takes time to join the plurality of wires, it is a factor that causes a decrease in the manufacturing efficiency of the semiconductor device. Therefore, improvements in these aspects are desired.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the above circumstances, one of the problems of the present disclosure is to provide a semiconductor device capable of improving the manufacturing efficiency of the device while coping with a larger current.

Means for Solving the Problems

[0006] The semiconductor device provided by the present disclosure includes a first conductive plate having a first main surface facing in the thickness direction, a second conductive plate having a second main surface facing the same side as the first main surface in the thickness direction and separated from the first conductive plate in a first direction orthogonal to the thickness direction, a plurality of semiconductor elements each having an electrode provided on the side where the first main surface faces in the thickness direction and joined to the first main surface, and a conductive member electrically joined to each of the electrodes of the plurality of semiconductor elements, the second main surface. The conductive member includes a main body portion, a plurality of first joint portions individually and electrically joined to the electrodes of the plurality of semiconductor elements, a second joint portion electrically joined to the second main surface, a first connection portion connecting the main body portion and the plurality of first joint portions, and a second connection portion connecting the main body portion and the second joint portion. Each of the plurality of first joint portions includes an overlapping region overlapping one of the electrodes of the plurality of semiconductor elements as viewed in the thickness direction. The plurality of semiconductor elements are arranged along a second direction orthogonal to each of the thickness direction and the first direction. The main body portion extends along the second direction. The first connection portion includes a plurality of connection regions separated from each other in the second direction. The plurality of connection regions are individually connected to the plurality of first joint portions.

Effects of the Invention

[0007] According to the semiconductor device according to the present disclosure, it is possible to improve the manufacturing efficiency of the device while coping with a larger current.

[0008] Other features and advantages of the present disclosure will become clearer from the detailed description given below based on the accompanying drawings.

Brief Description of the Drawings

[0009]

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Embodiments for Carrying Out the Invention

[0010] Embodiments for carrying out the present disclosure will be described based on the accompanying drawings.

[0011] Based on FIGS. 1 to 18, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 includes a first conductive plate 11, a second conductive plate 12, a first input terminal 13, an output terminal 14, a second input terminal 15, a plurality of semiconductor elements 20, a die bonding layer 23, a first conductive member 31, a plurality of first bonding layers 33, a second bonding layer 34, and a sealing resin 50. In the semiconductor device A10, the plurality of semiconductor elements 20 include a pair of switching elements 21 and a pair of protection elements 22. Further, the semiconductor device A10 includes a first gate terminal 161, a second gate terminal 162, a first detection terminal 171, a second detection terminal 172, a second conductive member 32, a plurality of third bonding layers 35, a fourth bonding layer 36, a pair of gate wires 41, and a pair of detection wires 42. Here, for convenience of understanding, FIG. 3 shows through the sealing resin 50. In FIG. 3, the passed sealing resin 50 is indicated by an imaginary line (two-dot chain line). In FIG. 3, the IX-IX line and the X-X line are each indicated by a one-dot chain line.

[0012] In the description of the semiconductor device A10, for convenience, the thickness direction of each of the first conductive plate 11 and the second conductive plate 12 is referred to as the "thickness direction z". A direction orthogonal to the thickness direction z is referred to as the "first direction x". A direction orthogonal to both the thickness direction z and the first direction x is referred to as the "second direction y".

[0013] The semiconductor device A10 converts a DC power supply voltage applied to the first input terminal 13 and the second input terminal 15 into AC power by a pair of switching elements 21. The converted AC power is input from the output terminal 14 to a power supply target such as a motor. The semiconductor device A10 is used in a power conversion circuit such as an inverter, for example.

[0014] As shown in FIGS. 3, 7, and 8, the first conductive plate 11 is a conductive member on which one of the pair of switching elements 21 (the first element 21A described later) and one of the pair of protection elements 22 (the first diode 22A described later) are mounted. The first conductive plate 11 is composed of the same lead frame together with the second conductive plate 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the first conductive plate 11, the second conductive plate 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172 contains copper (that is, each member contains copper). The first conductive plate 11 has a first main surface 111 and a first back surface 112. The first main surface 111 faces the thickness direction z. On the first main surface 111, the first element 21A described later and the first diode 22A described later are mounted. The first back surface 112 faces the side opposite to the first main surface 111 in the thickness direction z. The first back surface 112 is, for example, plated with tin (Sn). As shown in FIGS. 7 and 8, the thickness T1 of the first conductive plate 11 is greater than the maximum thickness t of the first conductive member 31 max is larger.

[0015] As shown in FIGS. 3, 7, and 8, the second conductive plate 12 is a conductive member on which the other one of the pair of switching elements 21 (the second element 21B described later) and one of the pair of protection elements 22 (the second diode 22B described later) are mounted. The second conductive plate 12 is located away from the first conductive plate 11 in the first direction x. The second conductive plate 12 has a second main surface 121 and a second back surface 122. The second main surface 121 faces the same side as the first main surface 111 in the thickness direction z. On the second main surface 121, the second element 21B described later and the second diode 22B described later are mounted. The second back surface 122 faces the side opposite to the second back surface 122 in the thickness direction z. The second back surface 122 is, for example, tin-plated. As shown in FIGS. 7 and 8, the thickness T2 of the second conductive plate 12 is greater than the maximum thickness t of the first conductive member 31 max is greater.

[0016] As shown in FIGS. 3 and 7, the pair of switching elements 21 includes a first element 21A and a second element 21B. The first element 21A is joined to the first main surface 111 of the first conductive plate 11. The second element 21B is joined to the second main surface 121 of the second conductive plate 12. The pair of switching elements 21 is, for example, a MOSFET (Metal - Oxide - Semiconductor Field - Effect Transistor). In the description of the semiconductor device A10, the pair of switching elements 21 is an n - channel type and targets a MOSFET with a vertical structure. Each of the pair of switching elements 21 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). In addition, the compound semiconductor substrate may contain gallium nitride (GaN). As shown in FIG. 15, each of the pair of switching elements 21 has a first electrode 211, a second electrode 212, and a third electrode 213.

[0017] As shown in FIG. 15, the first electrode 211 is provided to face either the first main surface 111 of the first conductive plate 11 or the second main surface 121 of the second conductive plate 12. A voltage corresponding to the power to be converted is applied to the first electrode 211. That is, the first electrode 211 corresponds to a drain electrode.

[0018] As shown in FIG. 15, the second electrode 212 is provided on the side facing the first main surface 111 of the first conductive plate 11 in the thickness direction z, that is, on the side opposite to the first electrode 211. A current corresponding to the power converted by either one of the pair of switching elements 21 flows through the second electrode 212. That is, the second electrode 212 corresponds to a source electrode. The second electrode 212 includes a plurality of metal plating layers. The second electrode 212 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the second electrode 212 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0019] As shown in FIGS. 14 and 15, the third electrode 213 is provided on the same side as the second electrode 212 in the thickness direction z and is located away from the second electrode 212. A gate voltage for driving either one of the pair of switching elements 21 is applied to the third electrode 213. That is, the third electrode 213 corresponds to a gate electrode. In each of the pair of switching elements 21, a current corresponding to the voltage applied to the first electrode 211 is converted based on the gate voltage. When viewed along the thickness direction z, the area of the third electrode 213 is smaller than the area of the second electrode 212.

[0020] As shown in FIGS. 3 and 8, the pair of protection elements 22 includes a first diode 22A and a second diode 22B. The first diode 22A is joined to the first main surface 111 of the first conductive plate 11. The second diode 22B is joined to the second main surface 121 of the second conductive plate 12. The pair of protection elements 22 is, for example, a Schottky barrier diode. The first diode 22A is connected in parallel to the first element 21A. The second diode 22B is connected in parallel to the second element 21B. Each of the pair of protection elements 22 is a so-called freewheeling diode that, when a reverse bias is applied to each of the pair of switching elements 21, allows current to flow through the protection element 22 connected in parallel thereto instead of the switching element 21. As shown in FIG. 18, each of the pair of protection elements 22 has an upper surface electrode 221 and a lower surface electrode 222.

[0021] As shown in FIG. 17, the upper surface electrode 221 is provided on the side (the upper side in FIG. 17) facing the first main surface 111 of the first conductive plate 11 in the thickness direction z. In each of the pair of protection elements 22, the upper surface electrode 221 is electrically connected to the second electrode 212 of any one of the pair of switching elements 21 connected in parallel to the protection element 22. That is, the upper surface electrode 221 corresponds to an anode electrode.

[0022] As shown in FIG. 17, the lower surface electrode 222 is provided on the side opposite to the upper surface electrode 221 in the thickness direction z. In each of the pair of protection elements 22, the lower surface electrode 222 is electrically connected to the first electrode 211 of any one of the pair of switching elements 21 connected in parallel to the protection element 22. That is, the lower surface electrode 222 corresponds to a cathode electrode.

[0023] As shown in FIG. 3, on the first main surface 111 of the first conductive plate 11, the first element 21A and the first diode 22A are arranged along the second direction y. On the second main surface 121 of the second conductive plate 12, the second element 21B and the second diode 22B are arranged along the second direction y. Thus, in the semiconductor device A10, a plurality of semiconductor elements 20 are arranged along the second direction y.

[0024] As shown in FIGS. 3, 15, and 18, the die bonding layer 23 includes portions located between the first main surface 111 of the first conductive plate 11, the second main surface 121 of the second conductive plate 12, the first electrodes 211 of the pair of switching elements 21, and the lower surface electrodes 222 of the pair of protection elements 22. The die bonding layer 23 has conductivity. The die bonding layer 23 is, for example, lead-free solder. Alternatively, the die bonding layer 23 may be lead solder. The die bonding layer 23 electrically joins the first electrode 211 of the first element 21A, the lower surface electrode 222 of the first diode 22A, and the first main surface 111. Thereby, the first electrode 211 of the first element 21A and the lower surface electrode 222 of the first diode 22A are electrically connected to the first conductive plate 11. The die bonding layer 23 electrically joins the first electrode 211 of the second element 21B, the lower surface electrode 222 of the second diode 22B, and the second main surface 121. Thereby, the first electrode 211 of the second element 21B and the lower surface electrode 222 of the second diode 22B are electrically connected to the second conductive plate 12.

[0025] As shown in FIG. 3, the first input terminal 13 includes a portion extending along the second direction y and is connected to the first conductive plate 11. Therefore, the first input terminal 13 is electrically connected to the first conductive plate 11. The first input terminal 13 is a P terminal (positive electrode) to which a DC power supply voltage to be subjected to power conversion is applied. The first input terminal 13 has a covering portion 13A and an exposed portion 13B. As shown in FIG. 9, the covering portion 13A is connected to the first conductive plate 11 and is covered with the sealing resin 50. When viewed along the first direction x, the covering portion 13A is bent. As shown in FIGS. 2 to 5, the exposed portion 13B is connected to the covering portion 13A and is exposed from the sealing resin 50. The exposed portion 13B extends on the side away from the first conductive plate 11 in the second direction y. For example, tin plating is applied to the surface of the exposed portion 13B.

[0026] As shown in FIG. 3, the output terminal 14 includes a portion extending along the second direction y and is connected to the second conductive plate 12. Therefore, the output terminal 14 is electrically connected to the second conductive plate 12. Alternating current power converted by the pair of switching elements 21 is output from the output terminal 14. The output terminal 14 has a covered portion 14A and an exposed portion 14B. The covered portion 14A is connected to the second conductive plate 12 and is covered with the encapsulating resin 50 (see FIG. 11). When viewed along the first direction x, the covered portion 14A is bent in the same manner as the covered portion 13A of the first input terminal 13. As shown in FIGS. 2 to 5, the exposed portion 14B is connected to the covered portion 14A and is exposed from the encapsulating resin 50. The exposed portion 14B extends in a direction away from the second conductive plate 12 in the second direction y. For example, the surface of the exposed portion 14B is tin-plated.

[0027] As shown in FIG. 3, the second input terminal 15 is located away from both the first conductive plate 11 and the second conductive plate 12 in the second direction y and is located between the first input terminal 13 and the output terminal 14 in the first direction x. The second input terminal 15 extends along the second direction y. The second input terminal 15 is electrically connected to the second electrode 212 of the second element 21B and the upper surface electrode 221 of the second diode 22B. The second input terminal 15 is an N terminal (negative electrode) to which a DC power supply voltage to be power-converted is applied. The second input terminal 15 has a covered portion 15A and an exposed portion 15B. As shown in FIG. 10, the covered portion 15A is covered with the encapsulating resin 50. As shown in FIGS. 2 to 5, the exposed portion 15B is connected to the covered portion 15A and is exposed from the encapsulating resin 50. The exposed portion 15B extends in a direction away from both the first conductive plate 11 and the second conductive plate 12 in the second direction y. For example, the surface of the exposed portion 15B is tin-plated.

[0028] As shown in FIG. 3, the first gate terminal 161 is located away from the first conductive plate 11 in the second direction y and is located at one end in the first direction x. The second gate terminal 162 is located away from the second conductive plate 12 in the second direction y and is located at the other end in the first direction x. The first gate terminal 161 is electrically connected to the third electrode 213 of the first element 21A. A gate voltage for driving the first element 21A is applied to the first gate terminal 161. The second gate terminal 162 is electrically connected to the third electrode 213 of the second element 21B. A gate voltage for driving the second element 21B is applied to the second gate terminal 162.

[0029] As shown in FIG. 3, the first gate terminal 161 has a covering portion 161A and an exposed portion 161B. As shown in FIG. 11, the covering portion 161A is covered with the encapsulating resin 50. As shown in FIGS. 2 to 5, the exposed portion 161B is connected to the covering portion 161A and is exposed from the encapsulating resin 50. The exposed portion 161B extends in a direction away from the first conductive plate 11 in the second direction y. For example, the surface of the exposed portion 161B is plated with tin.

[0030] As shown in FIG. 3, the second gate terminal 162 has a covering portion 162A and an exposed portion 162B. As shown in FIG. 11, the covering portion 162A is covered with the encapsulating resin 50. As shown in FIGS. 2 to 5, the exposed portion 162B is connected to the covering portion 162A and is exposed from the encapsulating resin 50. The exposed portion 162B extends in a direction away from the second conductive plate 12 in the second direction y. For example, the surface of the exposed portion 162B is plated with tin.

[0031] As shown in FIG. 3, the first detection terminal 171 is located away from the first conductive plate 11 in the second direction y and is located between the first input terminal 13 and the first gate terminal 161 in the first direction x. As shown in FIG. 3, the second detection terminal 172 is located away from the second conductive plate 12 in the second direction y and is located between the output terminal 14 and the second gate terminal 162 in the first direction x. The first detection terminal 171 is electrically connected to the second electrode 212 of the first element 21A. A voltage corresponding to the current flowing through the second electrode 212 of the first element 21A is applied to the first detection terminal 171. The second detection terminal 172 is electrically connected to the second electrode 212 of the second element 21B. A voltage corresponding to the current flowing through the second electrode 212 of the second element 21B is applied to the second detection terminal 172.

[0032] As shown in FIG. 3, the first detection terminal 171 has a coated portion 171A and an exposed portion 171B. As shown in FIG. 11, the coated portion 171A is covered with the encapsulating resin 50. As shown in FIGS. 2 to 5, the exposed portion 171B is connected to the coated portion 171A and is exposed from the encapsulating resin 50. The exposed portion 171B extends in the side away from the first conductive plate 11 in the second direction y. For example, tin plating is applied to the surface of the exposed portion 171B.

[0033] As shown in FIG. 3, the second detection terminal 172 has a coated portion 172A and an exposed portion 172B. As shown in FIG. 11, the coated portion 172A is covered with the encapsulating resin 50. As shown in FIGS. 2 to 5, the exposed portion 172B is connected to the coated portion 172A and is exposed from the encapsulating resin 50. The exposed portion 172B extends in the side away from the second conductive plate 12 in the second direction y. For example, tin plating is applied to the surface of the exposed portion 172B.

[0034] As shown in FIG. 5, in the semiconductor device A10, the heights h of the exposed portions 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 are all the same. Further, the thicknesses of each of these are all the same. For this reason, when viewed along the first direction x, at least a part (exposed portion 15B) of the second input terminal 15 overlaps each of the first input terminal 13 and the output terminal 14 (see FIG. 6).

[0035] As shown in FIG. 3, the first conductive member 31 is electrically joined to the second electrode 212 of the first element 21A, the upper surface electrode 221 of the first diode 22A, and the second main surface 121 of the second conductive plate 12. Thereby, the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A are electrically connected to the second conductive plate 12 in a state where they are electrically connected to each other. The first conductive member 31 contains copper. In the semiconductor device A10, the first conductive member 31 is a metal clip. As shown in FIG. 12, the first conductive member 31 has a main body portion 311, a plurality of first joining portions 312, a first connecting portion 313, a second joining portion 314, and a second connecting portion 315.

[0036] As shown in FIG. 12, the main body portion 311 forms the main part of the first conductive member 31. The main body portion 311 extends along the second direction y. As shown in FIGS. 7 and 8, the main body portion 311 is parallel to the first main surface 111 of the first conductive plate 11. As shown in FIG. 3, when viewed along the thickness direction z, a part of the main body portion 311 overlaps the first main surface 111.

[0037] As shown in FIGS. 3, 7, and 8, a plurality of first joints 312 are individually and electrically joined to the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A. Each of the plurality of first joints 312 faces either the second electrode 212 of the first element 21A or the upper surface electrode 221 of the first diode 22A. As shown in FIGS. 14 and 16, each of the plurality of first joints 312 has an opening 312A. The opening 312A penetrates any one of the plurality of first joints 312 in the thickness direction z. The opening 312A is circular when viewed along the thickness direction z. The opening area of the opening 312A is 0.25 mm 2 or more. Each of the plurality of first joints 312 includes an overlapping region 312B. When viewed along the thickness direction z, the overlapping region 312B refers to a region that overlaps either the second electrode 212 of the first element 21A or the upper surface electrode 221 of the first diode 22A (excluding the opening 312A). When viewed along the thickness direction z, the area of the overlapping region 312B is 70% or more of the area of each of the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A.

[0038] As shown in FIGS. 7 and 12, the first connecting portion 313 connects the main body portion 311 and the plurality of first joints 312. As shown in FIG. 7, when viewed along the second direction y, the first connecting portion 313 is inclined in a direction away from the first main surface 111 of the first conductive plate 11 as it goes from the plurality of first joints 312 toward the main body portion 311. When viewed along the second direction y, the magnitude of the acute angle α (see FIGS. 15 and 17) formed by the first connecting portion 313 with respect to each of the plurality of first joints 312 is 30° or more and 60° or less.

[0039] As shown in FIGS. 3, 10, and 11, the second joint 314 is electrically joined to the second main surface 121 of the second conductive plate 12. The second joint 314 faces the second main surface 121. In the semiconductor device A10, the second joint 314 includes two regions that are separated from each other in the second direction y.

[0040] As shown in FIGS. 7, 8, and 12, the second connecting portion 315 connects the main body portion 311 and the second joint portion 314. When viewed along the in-plane direction (the second direction y in the semiconductor device A10) of the second main surface 121 of the second conductive plate 12, the second connecting portion 315 is inclined away from the second main surface 121 as it extends from the second joint portion 314 toward the main body portion 311.

[0041] As shown in FIGS. 15 and 17, each of the plurality of first bonding layers 33 is located between either the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A, and any one of the plurality of first joint portions 312 of the first conductive member 31 facing therewith. The plurality of first bonding layers 33 have conductivity. The plurality of first bonding layers 33 are, for example, lead-free solder. Alternatively, the plurality of first bonding layers 33 may be lead solder. The plurality of first bonding layers 33 individually and electrically bond the plurality of first joint portions 312 to the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A. Accordingly, the first conductive member 31 is electrically bonded to the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A by the plurality of first bonding layers 33. As shown in FIGS. 14 and 16, when viewed along the thickness direction z, each of the plurality of first bonding layers 33 includes a portion protruding outward from the overlapping region 312B of any one of the plurality of first joint portions 312. A fillet is formed on the first bonding layer 33 protruding outward from the overlapping region 312B of any one of the plurality of first joint portions 312. As shown in FIGS. 14 to 17, as the first bonding layer 33, which is solder, moves away from the overlapping region 312B outward, the fillet forms a shape in which the dimension in the thickness direction z of the fillet gradually decreases toward either the surface of the second electrode 212 of the first element 21A or the surface of the upper surface electrode 221 of the first diode 22A.

[0042] As shown in FIGS. 15 and 17, a plurality of first bonding layers 33 are in contact with a plurality of first bonding portions 312 individually. Further, each of the plurality of first bonding layers 33 is also in contact with the inner peripheral surface of the corresponding first bonding portion 312 that defines the opening 312A of each of the plurality of first bonding portions 312. For this reason, each of the plurality of first bonding layers 33 includes a portion that has sunk into one of the openings 312A of the plurality of first bonding portions 312. The thickness t of each of the plurality of first bonding portions 312 is 0.1 mm or more and is not more than twice the maximum thickness T of each of the plurality of first bonding layers 33. Here, the maximum thickness T of each of the plurality of first bonding layers 33 does not include the portion of the corresponding first bonding layer 33 that has penetrated into the opening 312A. The maximum thickness T of each of the plurality of first bonding layers 33 is greater than the thickness of each of the plurality of semiconductor elements 20. max Here, the maximum thickness T of each of the plurality of first bonding layers 33 max does not include the portion of the corresponding first bonding layer 33 that has penetrated into the opening 312A. The maximum thickness T of each of the plurality of first bonding layers 33 max is greater than the thickness of each of the plurality of semiconductor elements 20.

[0043] As shown in FIGS. 8 and 16, the second bonding layer 34 includes a portion located between the second main surface 121 of the second conductive plate 12 and the second bonding portion 314 of the first conductive member 31 facing the second main surface 121. The second bonding layer 34 has conductivity. The second bonding layer 34 is, for example, lead-free solder. Alternatively, the second bonding layer 34 may be lead solder. The second bonding layer 34 electrically bonds the second bonding portion 314 and the second main surface 121. Accordingly, the first conductive member 31 is electrically bonded to the second main surface 121 by the second bonding layer 34.

[0044] As shown in FIG. 3, the second conductive member 32 is bonded to the second electrode 212 of the second element 21B, the upper surface electrode 221 of the second diode 22B, and the covering portion 15A of the second input terminal 15. As a result, the second electrode 212 of the second element 21B and the upper surface electrode 221 of the second diode 22B are electrically connected to the second input terminal 15 in a state where they are electrically connected to each other. The second conductive member 32 contains copper. In the semiconductor device A10, the second conductive member 32 is a metal clip. As shown in FIG. 13, the second conductive member 32 has a main body portion 321, a plurality of third bonding portions 322, a third connecting portion 323, a fourth bonding portion 324, and a fourth connecting portion 325.

[0045] As shown in FIG. 13, the main body portion 321 forms the main part of the second conductive member 32. The main body portion 321 extends along the second direction y. As shown in FIGS. 7, 8, and 10, the main body portion 311 is parallel to the second main surface 121 of the second conductive plate 12. The main body portion 321 is located farther away from both the first main surface 111 of the first conductive plate 11 and the second main surface 121 than the main body portion 311 of the first conductive member 31, and straddles the second joint portion 314 of the first conductive member 31.

[0046] As shown in FIGS. 3, 7, and 8, the plurality of third joint portions 322 are individually and electrically joined to the second electrode 212 of the second element 21B and the upper surface electrode 221 of the second diode 22B. Each of the plurality of third joint portions 322 faces either the second electrode 212 of the second element 21B or the upper surface electrode 221 of the second diode 22B.

[0047] As shown in FIGS. 8 and 13, the third connecting portion 323 connects the main body portion 321 and the plurality of third joint portions 322. As shown in FIG. 8, when viewed along the second direction y, the third connecting portion 323 is inclined in a direction away from the second main surface 121 of the second conductive plate 12 as it goes from the plurality of third joint portions 322 toward the main body portion 321.

[0048] As shown in FIGS. 3, 10, and 11, the fourth joint portion 324 is electrically joined to the covering portion 15A of the second input terminal 15. The fourth joint portion 324 faces the covering portion 15A.

[0049] As shown in FIG. 10, the fourth connecting portion 325 connects the main body portion 321 and the fourth joint portion 324. When viewed along the first direction x, the fourth connecting portion 325 is inclined in a direction away from the second main surface 121 of the second conductive plate 12 as it goes from the fourth joint portion 324 toward the main body portion 321.

[0050] Each of the plurality of third bonding layers 35 includes a portion located between any one of the second electrode 212 of the first diode 22A, the upper surface electrode 221 of the second diode 22B shown in FIGS. 7 and 8, and any one of the plurality of third bonding portions 322 of the second conductive member 32 facing thereto. The plurality of third bonding layers 35 have conductivity. The plurality of third bonding layers 35 are, for example, lead-free solder. Alternatively, the plurality of third bonding layers 35 may be lead solder. The plurality of third bonding layers 35 individually and electrically bond the plurality of third bonding portions 322 to the second electrode 212 of the second element 21B and the upper surface electrode 221 of the second diode 22B. Therefore, the second conductive member 32 is electrically bonded to the second electrode 212 of the second element 21B and the upper surface electrode 221 of the second diode 22B by the plurality of third bonding layers 35.

[0051] As shown in FIGS. 10 and 11, the fourth bonding layer 36 includes a portion located between the covering portion 15A of the second input terminal 15 and the fourth bonding portion 324 of the second conductive member 32 facing thereto. The fourth bonding layer 36 has conductivity. The fourth bonding layer 36 is, for example, lead-free solder. Alternatively, the fourth bonding layer 36 may be lead solder. The fourth bonding layer 36 electrically bonds the fourth bonding portion 324 to the covering portion 15A. Therefore, the second conductive member 32 is electrically bonded to the covering portion 15A by the fourth bonding layer 36.

[0052] As shown in FIGS. 3 and 14, a pair of gate wires 41 are individually and electrically bonded to the third electrodes 213 of the pair of switching elements 21, the covering portion 161A of the first gate terminal 161, and the covering portion 162A of the second gate terminal 162. Thereby, the first gate terminal 161 is electrically connected to the third electrode 213 of the first element 21A. The second gate terminal 162 is electrically connected to the third electrode 213 of the second element 21B. Each of the pair of gate wires 41 contains gold. Alternatively, each of the pair of gate wires 41 may contain copper or may contain aluminum (Al).

[0053] As shown in FIGS. 3 and 14, a pair of detection wires 42 are individually and electrically joined to the second electrodes 212 of a pair of switching elements 21, the covering portions 171A of the first detection terminals 171, and the covering portions 172A of the second detection terminals 172. Thereby, the first detection terminal 171 is electrically connected to the second electrode 212 of the first element 21A. The second detection terminal 172 is electrically connected to the second electrode 212 of the second element 21B. Each of the pair of detection wires 42 contains gold. In addition, each of the pair of detection wires 42 may contain copper or may contain aluminum.

[0054] As shown in FIGS. 3 and 7 to 10, the encapsulating resin 50 covers a pair of switching elements 21, a pair of protection elements 22, the first conductive member 31 and the second conductive member 32, and a part of each of the first conductive plate 11 and the second conductive plate 12. The encapsulating resin 50 has electrical insulation properties. The encapsulating resin 50 is made of a material containing, for example, a black epoxy resin. The encapsulating resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a plurality of recesses 55, and a groove portion 56.

[0055] As shown in FIGS. 7 to 10, the top surface 51 faces the same side as the first main surface 111 of the first conductive plate 11 in the thickness direction z. As shown in FIGS. 7 to 10, the bottom surface 52 faces the side opposite to the top surface 51 in the thickness direction z. As shown in FIG. 4, the first back surface 112 of the first conductive plate 11 and the second back surface 122 of the second conductive plate 12 are exposed from the bottom surface 52.

[0056] As shown in FIGS. 2, 4, and 6, the pair of first side surfaces 53 are spaced apart from each other in the first direction x. Each of the pair of first side surfaces 53 is connected to the top surface 51 and the bottom surface 52.

[0057] As shown in FIGS. 2, 4, and 5, a pair of second side surfaces 54 are positioned apart from each other in the second direction y. Each of the pair of second side surfaces 54 is connected to the top surface 51 and the bottom surface 52. As shown in FIG. 5, from one of the pair of second side surfaces 54, the exposed portion 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 are exposed. Further, from the second side surface 54, the exposed portion 161B of the first gate terminal 161, the exposed portion 162B of the second gate terminal 162, the exposed portion 171B of the first detection terminal 171, and the exposed portion 172B of the second detection terminal 172 are exposed.

[0058] As shown in FIGS. 2, 4, and 5, a plurality of recesses 55 are recessed in the first direction x from the second side surface 54 where the exposed portion 13B of the first input terminal 13 and the like are exposed among the pair of second side surfaces 54, and extend from the top surface 51 to the bottom surface 52 in the thickness direction z. In the first direction x, the plurality of recesses 55 are individually positioned between the first input terminal 13 and the first detection terminal 171, between the first input terminal 13 and the second input terminal 15, between the output terminal 14 and the second input terminal 15, and between the output terminal 14 and the second detection terminal 172. The plurality of recesses 55 ensure a longer creepage distance of the encapsulation resin 50 applied to any two of the first input terminal 13, the output terminal 14, the second input terminal 15, the first detection terminal 171, and the second detection terminal 172. Further, a longer creepage distance of the encapsulation resin 50 applied between either the first gate terminal 161 and the second gate terminal 162 and any one of the first input terminal 13, the output terminal 14, and the second input terminal 15 is ensured. This is suitable for improving the dielectric breakdown voltage of the semiconductor device A10.

[0059] As shown in FIGS. 4, 6, and 9 to 11, the groove portion 56 is recessed from the bottom surface 52 in the thickness direction z and extends along the first direction x. Both ends of the groove portion 56 in the first direction x are connected to a pair of first side surfaces 53. The groove portion 56 ensures a longer creepage distance of the encapsulating resin 50 covering the first conductive plate 11, the second conductive plate 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172. This is suitable for improving the withstand voltage insulation of the semiconductor device A10.

[0060] Next, the operation and effects of the semiconductor device A10 will be described.

[0061] The semiconductor device A10 includes a conductive member (first conductive member 31) electrically joined to each of the electrodes of the plurality of semiconductor elements 20 (in the semiconductor device A10, the second electrode 212 of the first element 21A and the upper surface electrode 221 of the first diode 22A), and the second main surface 121 of the second conductive plate 12. The conductive member has a main body portion 311, a plurality of first joining portions 312, a first connecting portion 313, a second joining portion 314, and a third joining layer 35. The plurality of first joining portions 312 are individually and electrically joined to the electrodes of the plurality of semiconductor elements 20. The second joining portion 314 is electrically joined to the second main surface 121. As a result, the joining of these portions of the conductive member is made in a batch, so that the conductive member can be individually and electrically joined to the electrodes of the plurality of semiconductor elements 20 in a shorter time and more efficiently. Therefore, according to the semiconductor device A10, it is possible to improve the manufacturing efficiency of the semiconductor device A10 while coping with a larger current.

[0062] Each of the plurality of first joining portions 312 includes an overlapping region 312B that overlaps with one of the electrodes of the plurality of semiconductor elements 20 when viewed along the thickness direction z. When viewed along the thickness direction z, the area of the overlapping region 312B is 70% or more of the area of each electrode of the plurality of semiconductor elements 20. This is suitable for allowing a larger current to flow through each of the plurality of semiconductor elements 20 and for alleviating the concentration of thermal stress acting on the first joining layer 33 and each of the plurality of first joining portions 312.

[0063] Viewed along the thickness direction z, at least a part of the main body portion 311 overlaps the first main surface 111 of the first conductive plate 11. This is effective in reducing the dimension of the semiconductor device A10 in the first direction x.

[0064] Viewed along the second direction y, the first connecting portion 313 is inclined away from the first main surface 111 of the first conductive plate 11 as it goes from the first joint portion 312 toward the main body portion 311. As a result, a fillet located on one side in the first direction x of the electrode of any one of the plurality of semiconductor elements 20 is likely to be formed in each of the plurality of first joint layers 33. Therefore, the concentration of thermal stress acting on the interface between the electrode of each of the plurality of semiconductor elements 20 and the first joint layer 33 can be more effectively reduced. In this case, when viewed along the second direction y, the magnitude of the acute angle α formed by the first connecting portion 313 with respect to the first joint portion 312 is 30° or more and 60° or less, which results in a fillet shape suitable for relaxing the thermal stress concentration. On the other hand, when the acute angle α is less than 30°, the distance between any one of the plurality of semiconductor elements 20 and the conductive member (the first conductive member 31) becomes excessively small, which is not preferable from the viewpoint of preventing breakdown voltage of the semiconductor element 20. On the other hand, when the acute angle α exceeds 60°, the volume of the fillet formed in any one of the plurality of first joint layers 33 becomes excessive, and the thermal stress generated in the first joint layer 33 tends to concentrate. This is not preferable from the viewpoint of relaxing the thermal stress concentration in the first joint layer 33.

[0065] The thickness t of the first joint portion 312 is max not more than twice the maximum thickness T of the first joint layer 33. Thereby, while ensuring the thermal durability of the first joint layer 33, the concentration of thermal stress acting on the interface between the first joint layer 33 and the first joint portion 312 can be reduced.

[0066] Each of the plurality of first joints 312 has an opening 312A penetrating in the thickness direction z. When the first joint layer 33 electrically joins the first joints 312 to the electrodes of each of the plurality of semiconductor elements 20, by providing the opening 312A, bubbles contained in the melted first joint layer 33 can be discharged to the outside. Further, the first joint layer 33 is in contact with the inner peripheral surface of the first joint 312 that defines the opening 312A. Thereby, a self-alignment effect is obtained in the melted first joint layer 33 such that the position of the first joint 312 is set to a predetermined position with respect to the electrode of the switching element 21.

[0067] The conductive member contains copper. Thereby, compared with a wire containing aluminum, the electrical resistance of the conductive member can be reduced. This is suitable for passing a large current through the switching element 21.

[0068] The first conductive plate 11 contains copper. Further, the thickness T1 of the first conductive plate 11 is greater than the maximum thickness t of the conductive member. max Thereby, while improving the thermal conductivity of the first conductive plate 11, the efficiency of heat conduction in the in-plane direction (the first direction x and the second direction y) of the first main surface 111 can be increased. This contributes to improving the heat dissipation performance of the semiconductor device A10.

[0069] Based on FIGS. 19 to 37, a semiconductor device A20 according to a second embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to the semiconductor device A10 described above are denoted by the same reference numerals, and redundant descriptions are omitted. Here, in FIG. 20, for convenience of understanding, the illustration of the encapsulation resin 50 is omitted. In each of FIGS. 21 and 25, for convenience of understanding, the illustrations of the encapsulation resin 50 and the second conductive member 32 are omitted. In FIG. 23, it penetrates the encapsulation resin 50. In FIG. 23, the penetrated encapsulation resin 50 is indicated by an imaginary line.

[0070] The semiconductor device A20 further includes a support substrate 60, a pair of first diode terminals 181, a pair of second diode terminals 182, a pair of control wirings 70, and a plurality of diode wires 43 with respect to the semiconductor device A10.

[0071] As shown in FIGS. 20 and 21, the support substrate 60 supports the first conductive plate 11 and the second conductive plate 12. In the semiconductor device A20, the support substrate 60 is composed of a DBC (Direct Bonded Copper) substrate. As shown in FIGS. 31 to 36, the support substrate 60 has an insulating layer 61, a pair of first metal layers 62, and a second metal layer 63. The support substrate 60 is covered with the encapsulation resin 50 except for a part of the second metal layer 63.

[0072] As shown in FIGS. 31 to 36, the insulating layer 61 includes a portion interposed between the pair of first metal layers 62 and the second metal layer 63 in the thickness direction z. The insulating layer 61 is made of a material having relatively high thermal conductivity. The insulating layer 61 is made of, for example, ceramics containing aluminum nitride (AlN). The insulating layer 61 may be composed of an insulating resin sheet in addition to ceramics.

[0073] As shown in FIGS. 31 to 36, the pair of first metal layers 62 are located on one side of the insulating layer 61 in the thickness direction z. The pair of first metal layers 62 are spaced apart from each other in the first direction x. Each of the pair of first metal layers 62 contains copper. The first back surface 112 of the first conductive plate 11 is joined to one of the pair of first metal layers 62 by a joining layer 69. The second back surface 122 of the second conductive plate 12 is joined to the other of the pair of first metal layers 62 by a joining layer 69. Thereby, in the semiconductor device A20, the first conductive plate 11 and the second conductive plate 12 are supported by the support substrate 60. The joining layer 69 is, for example, a brazing material containing silver (Ag). As shown in FIG. 25, when viewed along the thickness direction z, each of the pair of first metal layers 62 is located inward of the peripheral edge of the insulating layer 61.

[0074] As shown in FIGS. 31 to 36, the second metal layer 63 is located on the other side of the insulating layer 61 in the thickness direction z. As shown in FIG. 28, the surface of the second metal layer 63 (the surface facing the thickness direction z) is exposed from the bottom surface 52 of the encapsulating resin 50. The said surface is joined to a heat sink (not shown). The second metal layer 63 contains copper. When viewed along the thickness direction z, the periphery of the second metal layer 63 is located inward of the periphery of the insulating layer 61.

[0075] As shown in FIGS. 23 and 32, the first input terminal 13 is located on one side in the first direction x and is integral with the first conductive plate 11. The first input terminal 13 extends from the first conductive plate 11 along the first direction x. The thickness of the first input terminal 13 is smaller than the thickness T1 of the first conductive plate 11. The output terminal 14 is located on the other side in the first direction x and is integral with the second conductive plate 12, as shown in FIGS. 23 and 32. In the semiconductor device A20, the output terminal 14 includes a pair of regions that are separated from each other in the second direction y. Each of the pair of regions extends from the second conductive plate 12 along the first direction x. The thickness of each of the pair of regions is smaller than the thickness T2 of the second conductive plate 12. The second input terminal 15 is located on one side in the first direction x, as shown in FIGS. 23 and 31. The second input terminal 15 is located away from the first conductive plate 11 in the first direction x. In the semiconductor device A20, the second input terminal 15 includes a pair of regions that are separated from each other in the second direction y. The pair of regions are located on both sides of the first input terminal 13 in the second direction y. Each of the pair of regions extends along the first direction x.

[0076] In the semiconductor device A20, the plurality of semiconductor elements 20 include a plurality of switching elements 21. As shown in FIGS. 23 and 25, the plurality of switching elements 21 include a pair of first elements 21A, a pair of second elements 21B, a third element 21C, and a fourth element 21D. Among these, the configurations of each of the third element 21C and the fourth element 21D are different from the configurations of each of the pair of first elements 21A and the pair of second elements 21B. The third element 21C and the fourth element 21D have the same configuration as each other. The third element 21C is joined to the first main surface 111 of the first conductive plate 11. The fourth element 21D is joined to the second main surface 121 of the second conductive plate 12.

[0077] Each of the plurality of switching elements 21 includes a switching function section Q1 shown in FIG. 37 and a freewheeling diode D2. Among the plurality of switching elements 21, each of the third element 21C and the fourth element 21D further includes a diode function section D1 shown in FIG. 37 in addition to the switching function section Q1 and the freewheeling diode D2. Each of the third element 21C and the fourth element 21D further has a fourth electrode 214 and a pair of fifth electrodes 215 in addition to the first electrode 211, the second electrode 212, and the third electrode 213. In each of the third element 21C and the fourth element 21D, the same current as the current flowing through the second electrode 212 flows through the fourth electrode 214. In each of the third element 21C and the fourth element 21D, the pair of fifth electrodes 215 are electrically connected to the diode function section D1.

[0078] As shown in FIG. 37, the semiconductor device A20 constitutes a half-bridge type switching circuit. The pair of first elements 21A and the third element 21C constitute an upper arm circuit. In the upper arm circuit, the pair of first elements 21A and the third element 21C are connected in parallel with each other. The pair of second elements 21B and the fourth element 21D constitute a lower arm circuit. In the lower arm circuit, the pair of second elements 21B and the fourth element 21D are connected in parallel with each other.

[0079] As shown in FIGS. 23 and 25, on the first main surface 111 of the first conductive plate 11, a pair of first elements 21A and a third element 21C are arranged along the second direction y. On the second main surface 121 of the second conductive plate 12, a pair of second elements 21B and a fourth element 21D are arranged along the second direction y. Thus, also in the semiconductor device A20, a plurality of semiconductor elements 20 are arranged along the second direction y.

[0080] A pair of control wirings 70 constitute part of the conduction paths between the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, a pair of first diode terminals 181, and a pair of second diode terminals 182 and a plurality of switching elements 21. As shown in FIGS. 23 to 25, the pair of control wirings 70 includes a first wiring 70A and a second wiring 70B. In the first direction x, the first wiring 70A is located between a pair of first elements 21A and a third element 21C and the first input terminal 13 and the second input terminal 15. The first wiring 70A is joined to the first main surface 111 of the first conductive plate 11. In the first direction x, the second wiring 70B is located between a pair of second elements 21B and a fourth element 21D and the output terminal 14. The second wiring 70B is joined to the second main surface 121 of the second conductive plate 12. As shown in FIGS. 32 and 36, each of the pair of control wirings 70 has an insulating layer 71, a plurality of wiring layers 72, a metal layer 73, a plurality of holders 74, and a plurality of coating layers 75. The control wiring 70 is covered with the encapsulation resin 50 except for a part of each of the plurality of holders 74 and the plurality of coating layers 75.

[0081] As shown in FIG. 33, the insulating layer 71 includes a portion interposed between the plurality of wiring layers 72 and the metal layer 73 in the thickness direction z. The insulating layer 71 is made of, for example, ceramics. The insulating layer 71 may also be configured of an insulating resin sheet in addition to ceramics.

[0082] As shown in FIG. 33, the plurality of wiring layers 72 are located on one side in the thickness direction z of the insulating layer 71. Each of the plurality of wiring layers 72 contains copper. As shown in FIG. 25, the plurality of wiring layers 72 include a first wiring layer 721, a second wiring layer 722, and a pair of third wiring layers 723. When viewed along the thickness direction z, the area of each of the pair of third wiring layers 723 is smaller than the area of each of the first wiring layer 721 and the second wiring layer 722.

[0083] As shown in FIG. 33, the metal layer 73 is located on the other side in the thickness direction z of the insulating layer 71. The metal layer 73 contains copper. The metal layer 73 of the first wiring 70A is joined to the first main surface 111 of the first conductive plate 11 by a joining layer 78. The metal layer 73 of the second wiring 70B is joined to the second main surface 121 of the second conductive plate 12 by a joining layer 78. The joining layer 78 is made of a material regardless of its conductivity. The joining layer 78 is, for example, lead-free solder.

[0084] As shown in FIG. 33, the plurality of holders 74 are individually and electrically joined to the plurality of wiring layers 72 by a holder joining layer 79. The plurality of holders 74 are made of a conductive material such as metal. Each of the plurality of holders 74 is cylindrical and extends along the thickness direction z. The lower end of each of the plurality of holders 74 in the thickness direction z is electrically joined to one of the plurality of wiring layers 72. The upper end of each of the plurality of holders 74 in the thickness direction z is exposed from the sealing resin 50. The holder joining layer 79 has conductivity. The holder joining layer 79 is, for example, lead-free solder.

[0085] As shown in FIGS. 32 and 36, the plurality of coating layers 75 individually cover the upper ends of the plurality of holders 74 in the thickness direction z. The plurality of coating layers 75 are individually arranged in contact with the second convex portions 58 of the sealing resin 50 described later. Each of the plurality of coating layers 75 has electrical insulation. Each of the plurality of coating layers 75 is made of a material containing a synthetic resin.

[0086] In the semiconductor device A20, as shown in FIGS. 19 to 21, each of the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182 is composed of a metal pin extending in the thickness direction z. These terminals are individually press-fitted into a plurality of holders 74 of the pair of control wirings 70. As a result, these terminals are individually supported by the plurality of holders 74. Further, as shown in FIGS. 29, 30, and 36, a part of each of these terminals is covered by any one of the plurality of coating layers 75 of the control wiring 70.

[0087] As shown in FIG. 24, the first gate terminal 161 is press-fitted into the holder 74 joined to the first wiring layer 721 of the first wiring 70A among the plurality of holders 74. As a result, the first gate terminal 161 is supported by the holder 74 and is electrically connected to the first wiring layer 721 of the first wiring 70A.

[0088] As shown in FIGS. 24 and 33, the first detection terminal 171 is press-fitted into the holder 74 joined to the second wiring layer 722 of the first wiring 70A among the plurality of holders 74. As a result, the first detection terminal 171 is supported by the holder 74 and is electrically connected to the second wiring layer 722 of the first wiring 70A.

[0089] As shown in FIG. 24, the pair of first diode terminals 181 are individually press-fitted into the pair of holders 74 joined to the pair of third wiring layers 723 of the first wiring 70A among the plurality of holders 74. As a result, the pair of first diode terminals 181 are supported by the pair of holders 74 and are individually electrically connected to the pair of third wiring layers 723 of the first wiring 70A.

[0090] As shown in FIGS. 25 and 36, the second gate terminal 162 is press-fitted into the holder 74 joined to the first wiring layer 721 of the second wiring 70B among the plurality of holders 74. As a result, the second gate terminal 162 is supported by the holder 74 and is electrically connected to the first wiring layer 721 of the second wiring 70B.

[0091] As shown in FIGS. 25 and 36, the second detection terminal 172 is press-fitted into the holder 74 joined to the second wiring layer 722 of the second wiring 70B among the plurality of holders 74. Thereby, the second detection terminal 172 is supported by the holder 74 and is electrically connected to the second wiring layer 722 of the second wiring 70B.

[0092] As shown in FIGS. 25 and 36, a pair of second diode terminals 182 are individually press-fitted into the pair of holders 74 joined to the pair of third wiring layers 723 of the second wiring 70B among the plurality of holders 74. Thereby, the pair of second diode terminals 182 are supported by the pair of holders 74 and are individually electrically connected to the pair of third wiring layers 723 of the second wiring 70B.

[0093] As shown in FIG. 25, a plurality of gate wires 41 are individually and electrically joined to the third electrodes 213 of the plurality of switching elements 21, the first wiring layer 721 of the first wiring 70A, and the first wiring layer 721 of the second wiring 70B. Thereby, the first gate terminal 161 is electrically connected to the third electrodes 213 of the pair of first elements 21A and the third electrode 213 of the third element 21C. The second gate terminal 162 is electrically connected to the third electrodes 213 of the pair of second elements 21B and the third electrode 213 of the fourth element 21D.

[0094] As shown in FIG. 25, a plurality of detection wires 42 are individually and electrically joined to the second electrodes 212 of the pair of first elements 21A, the second electrodes 212 of the pair of second elements 21B, the fourth electrodes 214 of the third element 21C, and the fourth electrodes 214 of the fourth element 21D, the second wiring layer 722 of the first wiring 70A, and the second wiring layer 722 of the second wiring 70B. Thereby, the first detection terminal 171 is electrically connected to the second electrodes 212 of the pair of first elements 21A and the fourth electrode 214 of the third element 21C. The second detection terminal 172 is electrically connected to the second electrodes 212 of the pair of second elements 21B and the fourth electrode 214 of the fourth element 21D.

[0095] As shown in FIG. 25, the plurality of diode wires 43 are individually and electrically joined to a pair of fifth electrodes 215 of the third element 21C, a pair of fifth electrodes 215 of the fourth element 21D, a pair of third wiring layers 723 of the first wiring 70A, and a pair of third wiring layers 723 of the second wiring 70B. As a result, the pair of first diode terminals 181 are individually electrically connected to the pair of fifth electrodes 215 of the third element 21C. The pair of second diode terminals 182 are individually electrically connected to the pair of fifth electrodes 215 of the fourth element 21D. Each of the plurality of diode wires 43 contains gold. In addition, each of the plurality of diode wires 43 may contain copper or may contain aluminum.

[0096] As shown in FIG. 25, the first conductive member 31 is electrically joined to the second electrodes 212 of the pair of first elements 21A, the second electrodes 212 of the third element 21C, and the second main surface 121 of the second conductive plate 12. As a result, the second electrodes 212 of the pair of first elements 21A and the second electrodes 212 of the third element 21C are electrically connected to the second conductive plate 12 in a state where they are electrically connected to each other.

[0097] In the semiconductor device A20, as shown in FIGS. 25, 26, and 33, the plurality of first joints 312 are individually and electrically joined to the second electrodes 212 of the pair of first elements 21A and the second electrodes 212 of the third element 21C. Each of the plurality of first joints 312 faces either the second electrodes 212 of the pair of first elements 21A or the second electrodes 212 of the third element 21C.

[0098] In the semiconductor device A20, as shown in FIG. 25, the first connection portion 313 of the first conductive member 31 includes a plurality of connection regions 313A (three connection regions 313A in FIG. 25). The plurality of connection regions 313A are spaced apart from each other in the second direction y. The plurality of connection regions 313A are individually connected to the plurality of first joint portions 312 of the first conductive member 31. As shown in FIG. 32, when viewed along the second direction y, each of the plurality of connection regions 313A is inclined away from the first main surface 111 of the first conductive plate 11 as it goes from any one of the plurality of first joint portions 312 toward the main body portion 311 of the first conductive member 31. When viewed along the second direction y, the magnitude of the acute angle α (see FIG. 33) formed by any one of the plurality of connection regions 313A connected to each of the plurality of first joint portions 312 is 30° or more and 60° or less.

[0099] As shown in FIG. 24, the second conductive member 32 is joined to the second electrodes 212 of the pair of second elements 21B, the second electrode 212 of the fourth element 21D, and the covering portion 15A of the second input terminal 15. Thereby, the second electrodes 212 of the pair of second elements 21B and the second electrode 212 of the fourth element 21D are electrically connected to the second input terminal 15 in a state where they are electrically connected to each other. In the semiconductor device A20, as shown in FIG. 24, the second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a plurality of third connection portions 323, a pair of fourth joint portions 324, a pair of fourth connection portions 325, a pair of intermediate portions 326, and a plurality of cross beams 327.

[0100] As shown in FIG. 24, the pair of main body portions 321 are spaced apart from each other in the second direction y. Each of the pair of main body portions 321 extends along the first direction x. As shown in FIG. 31, each of the pair of main body portions 321 is parallel to both the first main surface 111 of the first conductive plate 11 and the second main surface 121 of the second conductive plate 12. The pair of main body portions 321 are located farther away from both the first main surface 111 and the second main surface 121 than the main body portion 311 of the first conductive member 31.

[0101] As shown in FIG. 24, a pair of intermediate portions 326 are located apart from each other in the second direction y and are positioned between the pair of main body portions 321 in the second direction y. Each of the pair of intermediate portions 326 extends along the first direction x. The dimension of each of the pair of intermediate portions 326 in the first direction x is smaller than the dimension of each of the pair of main body portions 321 in the first direction x. When viewed along the thickness direction z, a pair of second elements 21B are positioned on both sides in the second direction y of one of the pair of intermediate portions 326. When viewed along the thickness direction z, one of the pair of second elements 21B and the fourth element 21D are positioned on both sides in the second direction y of the other of the pair of intermediate portions 326.

[0102] As shown in FIG. 24, a plurality of third bonding portions 322 are individually and electrically bonded to the second electrodes 212 of the pair of second elements 21B and the second electrode 212 of the fourth element 21D. Each of the plurality of third bonding portions 322 faces either the second electrodes 212 of the pair of second elements 21B or the second electrode 212 of the fourth element 21D.

[0103] As shown in FIGS. 24 and 35, a pair of the third connecting portions 323 among the plurality of third connecting portions 323 are connected to both ends in the second direction y of any one of the plurality of third bonding portions 322. The pair of the third connecting portions 323 are connected to the pair of intermediate portions 326, or to either one of the pair of intermediate portions 326 and either one of the pair of main body portions 321. When viewed along the first direction x, each of the plurality of third connecting portions 323 is inclined away from the second main surface 121 of the second conductive plate 12 so as to go from any one of the plurality of third bonding portions 322 toward either one of the pair of main body portions 321 or either one of the pair of intermediate portions 326.

[0104] As shown in FIGS. 24 and 31, a pair of fourth bonding portions 324 are individually and electrically bonded to a pair of regions of the covering portion 15A of the second input terminal 15. Each of the pair of fourth bonding portions 324 faces either one of the pair of regions of the covering portion 15A.

[0105] As shown in FIGS. 24 and 31, a pair of fourth connecting portions 325 individually connect a pair of main body portions 321 and a pair of fourth joining portions 324. When viewed along the second direction y, each of the pair of fourth connecting portions 325 is inclined away from the first main surface 111 of the first conductive plate 11 so as to go from one of the pair of fourth joining portions 324 toward one of the pair of main body portions 321.

[0106] As shown in FIGS. 24 and 34, a plurality of cross beam portions 327 are arranged along the second direction y. When viewed along the thickness direction z, the plurality of cross beam portions 327 include regions that individually overlap a plurality of first joining portions 312 of the first conductive member 31. Both ends of each of the plurality of cross beam portions 327 in the second direction y are connected to a pair of intermediate portions 326, or to either one of the pair of intermediate portions 326 and either one of the pair of main body portions 321. When viewed along the first direction x, each of the plurality of cross beam portions 327 is convex on the side facing the first main surface 111 of the first conductive plate 11 in the thickness direction z.

[0107] In the semiconductor device A20, as shown in FIGS. 22 and 27 to 30, the encapsulating resin 50 further has a plurality of first convex portions 57 and a plurality of second convex portions 58 in addition to a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a plurality of concave portions 55, and a groove portion 56.

[0108] As shown in FIGS. 27, 29, and 30, the plurality of first convex portions 57 project from the top surface 51 in the thickness direction z. As shown in FIG. 22, when viewed along the thickness direction z, the plurality of first convex portions 57 are arranged at the four corners of the encapsulating resin 50. The outer shape of each of the plurality of first convex portions 57 is frustum-shaped. As shown in FIGS. 22 and 31, each of the plurality of first convex portions 57 has a mounting hole 571. The mounting hole 571 of each of the plurality of first convex portions 57 does not penetrate through the mounting hole 571 in the thickness direction z. The plurality of first convex portions 57 are used when mounting a driver module on the semiconductor device A20. The driver module is responsible for driving and controlling the semiconductor device A20.

[0109] As shown in FIGS. 27, 29, and 30, the plurality of second convex portions 58 protrude from the top surface 51 in the thickness direction z. As shown in FIG. 22, the plurality of second convex portions 58 are individually arranged with respect to the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182. As shown in FIGS. 32 and 36, each of the plurality of second convex portions 58 covers a part of any one of the plurality of holders 74 of the pair of control wirings 70. From each of the plurality of second convex portions 58, the upper end in the thickness direction z of any one of the plurality of holders 74 is exposed.

[0110] In the semiconductor device A20, as shown in FIGS. 29 and 30, the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed from one of the pair of first side surfaces 53, the first side surface 53. The exposed portion 14B of the output terminal 14 is exposed from the other of the pair of first side surfaces 53, the first side surface 53.

[0111] In the semiconductor device A20, as shown in FIGS. 22, 28, and 29, the plurality of recesses 55 are recessed in the first direction x from the first side surface 53 where the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed among the pair of first side surfaces 53, and reach from the top surface 51 to the bottom surface 52 in the thickness direction z. In the second direction y, the plurality of recesses 55 are located on both sides of the first input terminal 13 in the second direction y. The plurality of recesses 55 ensure a longer creepage distance of the sealing resin 50 applied to the first input terminal 13 and the second input terminal 15. This is suitable for improving the dielectric breakdown voltage of the semiconductor device A20.

[0112] In the semiconductor device A20, as shown in FIGS. 27, 28, 31, and 32, the groove portion 56 is recessed from the bottom surface 52 in the thickness direction z and extends along the second direction y. Both ends of the groove portion 56 in the second direction y are connected to a pair of second side surfaces 54. The groove portion 56 includes a pair of regions that are separated from each other in the first direction x. In the first direction x, the second metal layer 63 of the support substrate 60 is located between the pair of regions. The groove portion 56 ensures a longer creepage distance of the sealing resin 50 applied to the first input terminal 13, the second input terminal 15, and the output terminal 14. This is suitable for improving the breakdown voltage insulation of the semiconductor device A20.

[0113] Next, the operation and effects of the semiconductor device A20 will be described.

[0114] The semiconductor device A20 includes a conductive member (first conductive member 31) electrically joined to each of the electrodes of the plurality of semiconductor elements 20 (in the semiconductor device A20, the second electrodes 212 of the pair of first elements 21A and the second electrode 212 of the fourth element 21D), and the second main surface 121 of the second conductive plate 12. The conductive member has a main body portion 311, a plurality of first joint portions 312, a first connection portion 313, a second joint portion 314, and a third joint layer 35. The plurality of first joint portions 312 are individually and electrically joined to the electrodes of the plurality of semiconductor elements 20. The second joint portion 314 is electrically joined to the second main surface 121. The joining of these portions of the conductive member is carried out in a batch manner. Therefore, the semiconductor device A20 can also improve the manufacturing efficiency of the semiconductor device A20 while corresponding to a larger current.

[0115] In the semiconductor device A20, the first connection portion 313 of the first conductive member 31 includes a plurality of connection regions 313A that are separated from each other in the second direction y. The plurality of connection regions 313A are individually connected to the plurality of first joint portions 312 of the first conductive member 31. Further, when viewed along the second direction y, each of the plurality of connection regions 313A is inclined away from the first main surface 111 of the first conductive plate 11 as it goes from any one of the plurality of first joint portions 312 toward the main body portion 311 of the first conductive member 31. As a result, a fillet is likely to be formed in each of the plurality of first bonding layers 33 on one side in the first direction x of the electrodes of any of the plurality of semiconductor elements 20. Further, in a cross section of the first conductive member 31 including the boundary between each of the plurality of connection regions 313A and the main body portion 311 and having the first direction x as an out-of-plane direction, the cross-sectional moment of inertia of the cross section becomes smaller, so that the bending process of the first connection portion 313 with respect to the main body portion 311 can be made easier.

[0116] The present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the present disclosure can be freely designed in various ways.

[0117] The present disclosure includes the configurations described in the following appendices. Appendix 1. A first conductive plate having a first main surface facing in the thickness direction; A second conductive plate having a second main surface facing the same side as the first main surface in the thickness direction and being located away from the first conductive plate in a first direction orthogonal to the thickness direction; A plurality of semiconductor elements having electrodes provided on the side facing the first main surface in the thickness direction and being joined to the first main surface; A conductive member electrically joined to each of the electrodes of the plurality of semiconductor elements and the second main surface. The conductive member has a main body portion, a plurality of first joint portions individually and electrically joined to the electrodes of the plurality of semiconductor elements, a second joint portion electrically joined to the second main surface, a first connecting portion connecting the main body portion and the plurality of first joint portions, and a second connecting portion connecting the main body portion and the second joint portion, and is a semiconductor device. Supplementary Note 2. Each of the plurality of first joint portions includes an overlapping region that overlaps one of the electrodes of the plurality of semiconductor elements when viewed along the thickness direction. The semiconductor device according to Supplementary Note 1, wherein when viewed along the thickness direction, the area of the overlapping region is 70% or more of the area of each of the electrodes of the plurality of semiconductor elements. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, wherein at least a part of the main body portion overlaps the first main surface when viewed along the thickness direction. Supplementary Note 4. The plurality of semiconductor elements are arranged along a second direction orthogonal to both the thickness direction and the first direction. The semiconductor device according to Supplementary Note 2 or 3, wherein the main body portion extends along the second direction. Supplementary Note 5. The first connecting portion includes a plurality of connecting regions that are spaced apart from each other in the second direction. The semiconductor device according to Supplementary Note 4, wherein the plurality of connecting regions are individually connected to the plurality of first joint portions. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein when viewed along the second direction, each of the plurality of connecting regions is inclined away from the first main surface as it extends from one of the plurality of first joint portions toward the main body portion. Supplementary Note 7. The semiconductor device according to Supplementary Note 6, wherein when viewed along the second direction, the magnitude of the acute angle formed by any one of the plurality of connecting regions connected to each of the plurality of first joint portions is 30° or more and 60° or less. Supplementary Note 8. Further comprising a plurality of first bonding layers that are conductive and individually and electrically bond the plurality of first bonding portions and the electrodes of the plurality of semiconductor elements. When viewed along the thickness direction, each of the plurality of first bonding layers includes a portion protruding outward beyond the overlapping region of any of the plurality of first bonding portions. The semiconductor device according to any one of Appendices 2 to 7. Appendix 9. The plurality of first bonding layers contain tin. The semiconductor device according to Appendix 8. Appendix 10. The thickness of each of the plurality of first bonding portions is not more than twice the maximum thickness of any of the plurality of first bonding layers in contact with the first bonding portion. The semiconductor device according to Appendix 9. Appendix 11. The maximum thickness of each of the plurality of first bonding layers is 100 μm or more. The semiconductor device according to Appendix 10. Appendix 12. Each of the plurality of first bonding portions has an opening penetrating in the thickness direction. Any of the plurality of first bonding layers is in contact with the inner peripheral surface of the first bonding portion defining the opening. The semiconductor device according to any one of Appendices 8 to 11. Appendix 13. Further comprising a second bonding layer that is conductive and electrically bonds the second bonding portion and the second main surface. The second bonding layer is made of the same material as the plurality of first bonding layers. The semiconductor device according to any one of Appendices 8 to 12. Appendix 14. Each of the first conductive plate, the second conductive plate, and the conductive member contains copper. The semiconductor device according to any one of Appendices 1 to 13. Appendix 15. The thickness of each of the first conductive plate and the second conductive plate is greater than the maximum thickness of the conductive member. The semiconductor device according to any one of Appendices 1 to 14. Appendix 16. When viewed along the in-plane direction of the second main surface, the second connecting portion is inclined away from the second main surface as it extends from the second joint portion toward the main body portion. The semiconductor device according to any one of Appendices 1 to 15. Appendix 17. The semiconductor device further includes a plurality of semiconductor elements and a sealing resin that covers the conductive members. The sealing resin is in contact with the first main surface and the second main surface. The semiconductor device according to any one of Appendices 1 to 16. Appendix 18. The first conductive plate has a first back surface facing the side opposite to the first main surface in the thickness direction. The second conductive plate has a second back surface facing the side opposite to the second main surface in the thickness direction. The first back surface and the second back surface are exposed from the sealing resin. The semiconductor device according to Appendix 17. Appendix 19. At least one of the plurality of semiconductor elements includes a compound semiconductor substrate. The semiconductor device according to any one of Appendices 1 to 18. Appendix 20. The compound semiconductor substrate contains silicon carbide. The semiconductor device according to Appendix 19.

Explanation of Reference Numerals

[0118] A10, A20: Semiconductor device 11: First conductive plate 111: First main surface 112: First back surface 12: Second conductive plate 121: Second main surface 122: Second back surface 13: First input terminal 13A: Covered portion 13B: Exposed portion 14: Output terminal 14A: Covered portion 14B: Exposed portion 15: Second input terminal 15A: Covered portion 15B: Exposed portion 161: First gate terminal 161A: Covered portion 161B: Exposed portion 162: Second gate terminal 162A: Covered portion 162B: Exposed portion 171: First detection terminal 171A: Covered portion 171B: Exposed portion 172: Second detection terminal 172A: Coated portion 172B: Exposed portion 181: First diode terminal 182: Second diode terminal 20: Semiconductor element 21: Switching element 21A: First element 21B: Second element 21C: Third element 21D: Fourth element 211: First electrode 212: Second electrode 213: Third electrode 214: Fourth electrode 215: Fifth electrode 22: Protection element 22A: First diode 22B: Second diode 221: Top electrode 222: Bottom electrode 23: Die bonding layer 31: First conductive member 311: Body portion 312: First joint portion 312A: Opening 312B: Overlap region 313: First connection portion 313A: Connection region 314: Second joint portion 315: Second connection portion 32: Second conductive member 321: Body portion 322: Third joint portion 322A: Opening 323: Third connection portion 324: Fourth joint portion 325: Fourth connection portion 326: Intermediate portion 327: Cross beam portion 33: First joint layer 34: Second joint layer 35: Third joint layer 36: Fourth joint layer 41: Gate wire 42: Detection wire 43: Diode wire 50: Encapsulating resin 51: Top surface 52: Bottom surface 53: First side surface 54: Second side surface 55: Recess 56: Groove portion 57: First convex portion 571: Mounting hole 58: Second convex portion 60: Support substrate 61: Insulating layer 62: First metal layer 63: Second metal layer 69: Joint layer 70: Control wiring 70A: First wiring 70B: Second wiring 71: Insulation layer 72: Wiring layer 721: First wiring layer 722: Second wiring layer 723: Third wiring layer 73: Metal layer 74: Holder 75: Coating layer 78: Bonding layer 79: Holder bonding layer z: Thickness direction x: First direction y: Second direction

Claims

1. a first conductive plate having a first main surface facing in the thickness direction; a second conductive plate having a second main surface facing the same side as the first main surface in the thickness direction and being separated from the first conductive plate in a first direction orthogonal to the thickness direction; a plurality of semiconductor elements each having an electrode provided on the side where the first main surface faces in the thickness direction and being joined to the first main surface; a conductive member electrically joined to each of the electrodes of the plurality of semiconductor elements and the second main surface; the conductive member includes a main body portion, a plurality of first joint portions individually and electrically joined to the respective electrodes of the plurality of semiconductor elements, a second joint portion electrically joined to the second main surface, a first connecting portion connecting the main body portion and the plurality of first joint portions, and a second connecting portion connecting the main body portion and the second joint portion; each of the plurality of first joint portions includes an overlapping region overlapping with any one of the electrodes of the plurality of semiconductor elements when viewed in the thickness direction; the plurality of semiconductor elements are arranged along a second direction orthogonal to each of the thickness direction and the first direction; the main body portion extends along the second direction; the first connecting portion includes a plurality of connecting regions separated from each other in the second direction; the plurality of connecting regions are individually connected to the plurality of first joint portions, a semiconductor device.

2. The semiconductor device according to claim 1, wherein when viewed in the thickness direction, an area of the overlapping region is 70% or more of an area of each of the electrodes of the plurality of semiconductor elements.

3. The semiconductor device according to claim 1 or 2, wherein at least a part of the main body portion overlaps the first main surface when viewed in the thickness direction.

4. The semiconductor device according to any one of claims 1 to 3, wherein when viewed in the second direction, each of the plurality of connecting regions is inclined in a direction away from the first main surface as it goes from any one of the plurality of first joint portions toward the main body portion.

5. The semiconductor device according to any one of claims 1 to 4, wherein when viewed in the second direction, a magnitude of an acute angle formed by any one of the plurality of connecting regions connected to each of the plurality of first joint portions is 30° or more and 60° or less.

6. further comprising a plurality of first bonding layers having conductivity and individually and electrically bonding the plurality of first joint portions and the respective electrodes of the plurality of semiconductor elements; The semiconductor device according to any one of claims 1 to 5, wherein, when viewed in the thickness direction, each of the plurality of first bonding layers includes a portion protruding outward beyond the overlapping region of any one of the plurality of first bonding portions.

7. The semiconductor device according to claim 6, wherein each of the plurality of first bonding layers contains tin.

8. The semiconductor device according to claim 6 or 7, wherein the thickness of each of the plurality of first bonding portions is not more than twice the maximum thickness of any one of the plurality of first bonding layers in contact with the first bonding portion.

9. The semiconductor device according to claim 8, wherein the maximum thickness of each of the plurality of first bonding layers is 100 μm or more.

10. Further comprising a second bonding layer having conductivity and electrically bonding the second bonding portion and the second main surface, The semiconductor device according to any one of claims 6 to 9, wherein the second bonding layer is made of the same material as the plurality of first bonding layers.

11. The semiconductor device according to any one of claims 1 to 10, wherein each of the first conductive plate, the second conductive plate, and the conductive member contains copper.

12. The semiconductor device according to any one of claims 1 to 11, wherein the thickness of each of the first conductive plate and the second conductive plate is greater than the maximum thickness of the conductive member.

13. The semiconductor device according to any one of claims 1 to 12, wherein, when viewed in the in-plane direction of the second main surface, the second connecting portion is inclined away from the second main surface as it goes from the second bonding portion toward the main body portion.

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