Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus capable of processing substrates with higher accuracy.SOLUTION: In a substrate processing apparatus (100), a nozzle (4a) selectively discharges either a first processing liquid or a second processing liquid. Supply pipes (42, 43a) selectively supply either the first processing liquid or the second processing liquid to the nozzle (4a). A suck-back unit (7) performs a suction operation to suck the processing liquid from the supply pipe (42). A control unit (11) controls on-off valves (44a, 45a) to discharge the first processing liquid from the nozzle (4a) and then discharge the second processing liquid (steps S3 and S6). The control unit (11) causes the suck-back unit (7) to perform the suction operation while discharging the second processing liquid from the nozzle (4a) (step S6).SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] A single-wafer type substrate processing apparatus that discharges a processing liquid from a nozzle toward a substrate to process the substrate is known. Among single-wafer type substrate processing apparatuses, there is an apparatus that performs suck-back to prevent liquid dripping from the nozzle (see, for example, Patent Document 1). Suck-back is performed, for example, after the discharge of the processing liquid by the nozzle stops.

[0003] Specifically, suck-back indicates an operation of sucking the processing liquid into a suck-back pipe that branches from a supply pipe that supplies the processing liquid to the nozzle. By performing the sucking operation, the processing liquid remaining in the nozzle or the supply pipe is sucked into the suck-back pipe from the connection position between the supply pipe and the suck-back pipe.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] By the way, among single-wafer type substrate processing apparatuses, there is an apparatus that selectively discharges either one of two types of processing liquids from the same nozzle toward a substrate. In other words, the two types of processing liquids are exclusively discharged from the same nozzle. In such a substrate processing apparatus, a sucking operation is performed after the discharge of a preceding processing liquid, which is one of the two types of processing liquids, is stopped. As a result, the preceding processing liquid remaining in the nozzle or the supply pipe is sucked into the suck-back pipe.

[0006] However, in a substrate processing apparatus that discharges two types of processing liquids from the same nozzle toward a substrate, when discharging the subsequent processing liquid, which is the other of the two types of processing liquids, from the nozzle following the preceding processing liquid, the preceding processing liquid remaining in the sack-back pipe may be drawn into the supply pipe. Therefore, when discharging the subsequent processing liquid, there is a possibility that a mixed processing liquid obtained by mixing the subsequent processing liquid and the preceding processing liquid is supplied to the substrate. If the mixed processing liquid is supplied to the substrate, the substrate may be processed by the preceding processing liquid contained in the mixed processing liquid. As a result, the substrate may be processed more than expected. Further, there is a possibility that particles are generated due to a reaction between the preceding processing liquid contained in the mixed processing liquid and the substrate.

[0007] The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of processing a substrate with higher accuracy.

Means for Solving the Problems

[0008] According to one aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a substrate holding unit, a nozzle, a supply pipe, an on-off valve, a sack-back unit, and a control unit. The substrate holding unit horizontally holds the substrate. The nozzle selectively discharges either one of a first processing liquid and a second processing liquid. The supply pipe selectively supplies either one of the first processing liquid and the second processing liquid to the nozzle. The on-off valve is provided in the supply pipe. The sack-back unit performs a suction operation of sucking the processing liquid from the supply pipe. The control unit controls the on-off valve and the sack-back unit. The control unit controls the on-off valve to discharge the second processing liquid from the nozzle after discharging the first processing liquid from the nozzle. When discharging the second processing liquid from the nozzle, the control unit executes a suction process for causing the sack-back unit to perform the suction operation, and sucks the second processing liquid from the supply pipe into the sack-back unit.

[0009] In one embodiment, the substrate processing apparatus further includes a liquid receiving portion and a nozzle moving portion. The liquid receiving portion is disposed outside the substrate holding portion. The nozzle moving portion moves the nozzle between a processing position and a standby position. The processing position indicates a position facing the substrate held by the substrate holding portion. The standby position indicates a position facing the liquid receiving portion. The control unit controls the on-off valve to discharge the first processing liquid from the nozzle located at the processing position, and then controls the nozzle moving portion to move the nozzle to the standby position. The control unit executes a replacement process. The replacement process includes a process of flowing the second processing liquid from the supply pipe into the sac-back portion by controlling the on-off valve to discharge the second processing liquid from the nozzle located at the standby position.

[0010] In one embodiment, after executing the replacement process, the control unit controls the nozzle moving portion to move the nozzle to the processing position. The control unit controls the on-off valve to discharge the second processing liquid from the nozzle located at the processing position. When discharging the second processing liquid from the nozzle located at the processing position, the control unit executes the suction process.

[0011] In one embodiment, the nozzle is a first nozzle. The supply pipe is a first supply pipe. The on-off valve is a first on-off valve. The substrate processing apparatus further includes a second nozzle, a second supply pipe, and a second on-off valve. The second nozzle discharges a third processing liquid toward the substrate held by the substrate holding portion. The second supply pipe supplies the third processing liquid to the second nozzle. The second on-off valve is provided in the second supply pipe. During the execution of the replacement process, the control unit controls the second on-off valve to discharge the third processing liquid from the second nozzle.

[0012] In one embodiment, the second nozzle discharges the third processing liquid toward the substrate from a position outside the substrate holding portion.

[0013] In one embodiment, the nozzle moving unit is a first nozzle moving unit. The processing position is a first processing position. The standby position is a first standby position. The substrate processing apparatus further includes a second nozzle moving unit. The second nozzle moving unit moves the second nozzle between a second processing position and a second standby position. The second processing position indicates a position facing the substrate held by the substrate holding unit. The second standby position indicates a position outside the substrate holding unit. The second nozzle discharges the third processing liquid toward the substrate from the second processing position.

[0014] In one embodiment, the control unit controls the on-off valve while the nozzle is positioned at a processing position facing the substrate held by the substrate holding unit, to discharge the first processing liquid and the second processing liquid from the nozzle in this order, and executes the suction process while discharging the second processing liquid from the nozzle.

[0015] According to another aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a substrate holding unit, a nozzle, a liquid receiving unit, a nozzle moving unit, a supply pipe, an on-off valve, a suck-back unit, and a control unit. The substrate holding unit holds the substrate horizontally. The nozzle selectively discharges either one of a first processing liquid and a second processing liquid toward the substrate held by the substrate holding unit. The liquid receiving unit is disposed outside the substrate holding unit. The nozzle moving unit moves the nozzle between a processing position and a standby position. The processing position indicates a position facing the substrate held by the substrate holding unit. The standby position indicates a position facing the liquid receiving unit. The supply pipe selectively supplies either one of the first processing liquid and the second processing liquid to the nozzle. The on-off valve is provided in the supply pipe. The suck-back unit performs a suction operation of sucking the processing liquid from the supply pipe. The control unit controls the nozzle moving unit, the on-off valve, and the suck-back unit. The control unit controls the on-off valve to discharge the first processing liquid from the nozzle located at the processing position, and then controls the suck-back unit to perform the suction operation to suck the first processing liquid from the supply pipe to the suck-back unit. The control unit controls the nozzle moving unit to move the nozzle from the processing position to the standby position. The control unit executes a replacement process. The replacement process includes a process of controlling the on-off valve to discharge the second processing liquid from the nozzle located at the standby position, thereby allowing the second processing liquid to flow from the supply pipe into the suck-back unit.

[0016] According to still another aspect of the present invention, a substrate processing method is a method for processing a substrate. The substrate processing method includes a step of discharging a first processing liquid from a nozzle toward the substrate horizontally held by a substrate holding unit, a step of stopping the discharge of the first processing liquid, a step of discharging a second processing liquid from the nozzle toward the substrate horizontally held by the substrate holding unit, and a step of executing a suction process in which a suction operation of sucking the second processing liquid is performed by a suck-back unit from a supply pipe that selectively supplies either the first processing liquid or the second processing liquid to the nozzle when the second processing liquid is being discharged toward the substrate.

[0017] In an embodiment, the above substrate processing method further includes a step of moving the nozzle from a processing position to a standby position after stopping the discharge of the first processing liquid, and a step of executing a replacement process. The processing position indicates a position facing the substrate held by the substrate holding unit. The standby position indicates a position facing a liquid receiving unit disposed outside the substrate holding unit. The replacement process includes a process of causing the second processing liquid to flow into the suck-back unit from the supply pipe by discharging the second processing liquid from the nozzle located at the standby position toward the liquid receiving unit.

[0018] In an embodiment, the above substrate processing method further includes a step of moving the nozzle from the standby position to the processing position after executing the replacement process. The step of executing the suction process includes a step of executing the suction process when the second processing liquid is being discharged from the nozzle moved from the standby position to the processing position toward the substrate.

[0019] In an embodiment, the nozzle is a first nozzle, and the above substrate processing method further includes a step of discharging a third processing liquid from a second nozzle toward the substrate held by the substrate holding unit during the execution of the replacement process.

[0020] In one embodiment, the second nozzle discharges the third processing liquid toward the substrate from a position outside the substrate holding unit.

[0021] In one embodiment, the processing position is a first processing position, and the substrate processing method further includes a step of moving the second nozzle to a second processing position facing the substrate held by the substrate holding unit. The second nozzle discharges the third processing liquid toward the substrate from the second processing position.

[0022] In one embodiment, the step of discharging the first processing liquid from the nozzle toward the substrate includes a step of discharging the first processing liquid from the nozzle when the nozzle is located at the processing position. The processing position indicates a position facing the substrate held by the substrate holding unit. The step of performing the suction process includes a step of performing the suction process while discharging the second processing liquid from the nozzle while maintaining the position of the nozzle at the processing position after the discharge of the first processing liquid.

[0023] According to still another aspect of the present invention, a substrate processing method is a method for processing a substrate. The substrate processing method includes a step of discharging a first processing liquid toward the substrate from a nozzle located at a processing position facing the substrate horizontally held by a substrate holding unit, a step of stopping the discharge of the first processing liquid, a step of causing a suck-back unit to perform a suction operation of sucking the first processing liquid from a supply pipe that selectively supplies either the first processing liquid or the second processing liquid to the nozzle, so as to suck the first processing liquid from the supply pipe to the suck-back unit, a step of moving the nozzle from the processing position to a standby position facing a liquid receiving unit disposed outside the substrate holding unit, and a step of performing a replacement process. The replacement process includes a process of causing the second processing liquid to flow into the suck-back unit from the supply pipe by discharging the second processing liquid from the nozzle located at the standby position.

Advantages of the Invention

[0024] According to the substrate processing apparatus and the substrate processing method of the present invention, the substrate can be processed with higher accuracy.

Brief Description of the Drawings

[0025]

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Figure 22

Embodiments for Carrying Out the Invention

[0026] Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method according to the present invention will be described with reference to the drawings (FIGS. 1 to 22). However, the present invention is not limited to the following embodiments, and can be implemented in various modes without departing from the gist thereof. In addition, descriptions of overlapping parts may be omitted as appropriate. Also, in the drawings, the same or corresponding parts are denoted by the same reference numerals and the description will not be repeated.

[0027] In the substrate processing apparatus and substrate processing method according to the present invention, the "substrate" to be processed includes various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. Hereinafter, mainly, embodiments of the present invention will be described by taking the case where a disk-shaped semiconductor wafer is the object of substrate processing as an example. However, the substrate processing apparatus and substrate processing method according to the present invention are similarly applicable to various substrates other than the above-described semiconductor wafers. Further, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus and substrate processing method according to the present invention are applicable to substrates of various shapes.

[0028] [Embodiment 1] FIG. 1 is a schematic diagram of a substrate processing apparatus 100 according to the present embodiment. Specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 processes a substrate W. Specifically, the substrate processing apparatus 100 is a single-wafer type apparatus and processes the substrates W one by one using a processing liquid. The substrate processing apparatus 100 is, for example, a cleaning apparatus or an etching apparatus.

[0029] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 200, a fluid cabinet 101, a plurality of fluid boxes 102, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 10.

[0030] Each of the load ports LP stores a plurality of substrates W stacked thereon. The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the substrate processing unit 200. Note that a mounting table (pass) for temporarily mounting the substrate W may be provided between the indexer robot IR and the center robot CR, and the substrate W may be indirectly transferred between the indexer robot IR and the center robot CR via the mounting table.

[0031] The plurality of substrate processing units 200 form a plurality of towers TW (four towers TW in FIG. 1). The plurality of towers TW are arranged so as to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 200 (three substrate processing units 200 in FIG. 1) stacked vertically.

[0032] The fluid cabinet 101 stores a processing liquid. The processing liquid is not particularly limited as long as it is a liquid that contacts the substrate W. The processing liquid may include, for example, a chemical liquid and a rinse liquid.

[0033] The chemical liquid includes, for example, diluted hydrofluoric acid (DHF), hydrofluoric acid (HF), fluoro-nitric acid (a mixed solution of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixed solution of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, aqueous ammonia, hydrogen peroxide water, organic acids (e.g., citric acid, oxalic acid), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid-hydrogen peroxide water mixed solution (SPM), ammonia-hydrogen peroxide water mixed solution (SC1), hydrochloric acid-hydrogen peroxide water mixed solution (SC2), isopropyl alcohol (IPA), methanol, ethanol, hydrofluoroether (HFE), surfactant, or corrosion inhibitor.

[0034] The rinse liquid includes, for example, deionized water (DIW), carbonated water, electrolyzed ion water, hydrogen water, ozone water, aqueous ammonia, or diluted hydrochloric acid water (e.g., chlorine water of about 0.001 wt% to about 0.01 wt%).

[0035] Each fluid box 102 corresponds to one of the plurality of towers TW. The processing liquid in the fluid cabinet 101 is supplied to all the substrate processing units 200 included in the corresponding tower TW via one of the fluid boxes 102.

[0036] Each of the substrate processing units 200 performs substrate processing on the substrate W. Specifically, each of the substrate processing units 200 processes the substrate W using a processing liquid. For example, each of the substrate processing units 200 performs an etching process or a cleaning process on the substrate W.

[0037] The control device 10 controls the operations of each part of the substrate processing apparatus 100. For example, the control device 10 controls the substrate processing unit 200, the load port LP, the indexer robot IR, and the center robot CR. The control device 10 includes a control unit 11 and a storage unit 12.

[0038] The control unit 11 controls the operations of each part of the substrate processing apparatus 100 based on various information stored in the storage unit 12. The control unit 11 has, for example, a processor. The control unit 11 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 11 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0039] The storage unit 12 stores various information for controlling the operations of the substrate processing apparatus 100. For example, the storage unit 12 stores various data and various computer programs. The various data includes recipe data. The recipe data indicates a recipe that defines the processing content, processing conditions, and processing procedure of the substrate W. Various set values are set as the processing conditions in the recipe.

[0040] The storage unit 12 has a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 12 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 12 may include a removable medium.

[0041] Next, with reference to FIGS. 1 to 4, the substrate processing apparatus 100 of the present embodiment will be described. FIG. 2 is a diagram schematically showing the inside of the substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. FIG. 2 further schematically shows the first liquid supply line 41A, the second liquid supply line 51A, and the suck-back unit 7 included in the substrate processing apparatus 100 of the present embodiment. FIG. 3 is a plan view schematically showing the inside of the substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. FIG. 4 is a block diagram showing the configuration of the substrate processing apparatus 100 of the present embodiment.

[0042] As shown in FIGS. 2 and 3, the substrate processing unit 200 includes a processing chamber 201, a substrate holding unit 2, a substrate rotating unit 3, a first nozzle 4a, a second nozzle 5a, a nozzle moving unit 6, a cup unit 8, a lifting unit 85, and a liquid receiving unit 202. The substrate processing apparatus 100 further includes a first drainage pipe 9a, a second drainage pipe 9b, a first liquid supply line 41A, a second liquid supply line 51A, a suck-back unit 7, and a drain tank 103.

[0043] The substrate W is carried into the processing chamber 201 and processed in the processing chamber 201. The processing chamber 201 has a substantially box shape. The processing chamber 201 houses the substrate holding unit 2, the substrate rotating unit 3, the first nozzle 4a, the second nozzle 5a, the nozzle moving unit 6, the cup unit 8, the lifting unit 85, the liquid receiving unit 202, a part of the first drainage pipe 9a, a part of the second drainage pipe 9b, a part of the first liquid supply line 41A, and a part of the second liquid supply line 51A. The processing chamber 201 is, for example, a chamber.

[0044] The substrate holding unit 2 holds the substrate W horizontally. The operation of the substrate holding unit 2 is controlled by the control device 10 (control unit 11) (see FIG. 4). The substrate holding unit 2 is, for example, a spin chuck. In the present embodiment, the substrate holding unit 2 has a plurality of chuck members 21 and a spin base 22.

[0045] As shown in FIG. 3, the spin base 22 is disk-shaped and supports a plurality of chuck members 21 in a horizontal posture. The plurality of chuck members 21 are arranged at the peripheral edge of the spin base 22. The plurality of chuck members 21 sandwich the peripheral edge of the substrate W. By the plurality of chuck members 21, the substrate W is held in a horizontal posture. The operations of the plurality of chuck members 21 are controlled by the control device 10 (control unit 11) (see FIG. 4). The plurality of chuck members 21 are arranged such that the center of the substrate W faces the center of the spin base 22.

[0046] As shown in FIG. 2, the substrate rotating unit 3 integrally rotates the substrate W and the substrate holding unit 2 about a first rotation axis AX1 extending in the vertical direction. The operation of the substrate rotating unit 3 is controlled by the control device 10 (control unit 11) (see FIG. 4).

[0047] Specifically, the first rotation axis AX1 passes through the center of the spin base 22. Therefore, the spin base 22 rotates about the center of the spin base 22 as the rotation center. Also, as already described, the substrate holding unit 2 holds the substrate W such that the center of the substrate W faces the center of the spin base 22. Therefore, the substrate W rotates about the center of the substrate W as the rotation center.

[0048] The substrate rotating unit 3 has, for example, a shaft 31 and a motor body 32. The shaft 31 is coupled to the spin base 22. The motor body 32 rotates the shaft 31. As a result, the spin base 22 rotates. The operation of the motor body 32 is controlled by the control device 10 (control unit 11) (see FIG. 4). The motor body 32 is, for example, an electric motor.

[0049] As shown in FIG. 3, the nozzle moving unit 6 moves the first nozzle 4a between the processing position TP and the standby position WP. The nozzle moving unit 6 is controlled by the control device 10 (control unit 11) (see FIG. 4). The processing position TP is a position facing the substrate W held by the substrate holding unit 2. In the present embodiment, the processing position TP is a position facing the center of the substrate W. The standby position WP is a position outside the substrate holding unit 2 in a plan view. In the present embodiment, the standby position WP is a position outside the cup unit 8 in a plan view. More specifically, the standby position WP is a position facing the liquid receiving unit 202.

[0050] Specifically, the nozzle moving unit 6 moves the first nozzle 4a in the vertical direction and the horizontal direction. Specifically, as shown in FIG. 2, the nozzle moving unit 6 includes an arm 61, a base 62, and a nozzle moving mechanism 63.

[0051] The base 62 extends in the vertical direction. The arm 61 is coupled to the base 62. The arm 61 extends horizontally from the base 62. The arm 61 supports the first nozzle 4a. For example, the first nozzle 4a is fixed to the tip of the arm 61.

[0052] The nozzle moving mechanism 63 moves the arm 61 in the vertical direction and the horizontal direction. As a result, the first nozzle 4a moves in the vertical direction and the horizontal direction. The nozzle moving mechanism 63 is controlled by the control device 10 (control unit 11) (see FIG. 4).

[0053] Specifically, the nozzle moving mechanism 63 includes a rotation mechanism and a lifting mechanism. The rotation mechanism rotates the base 62 in both the forward and reverse directions about a second rotation axis AX2 extending in the vertical direction. As a result, the first nozzle 4a moves along the horizontal plane. The lifting mechanism raises and lowers the base 62 in the vertical direction. As a result, the first nozzle 4a moves in the vertical direction. The actuator of the rotation mechanism may include, for example, a servo motor such as a stepping motor and a speed reducer. The actuator of the lifting mechanism may include, for example, a ball screw and an electric motor capable of rotating in both the forward and reverse directions.

[0054] The first nozzle 4a selectively discharges either the first processing liquid or the second processing liquid from the processing position TP (see FIG. 3) toward the upper surface of the substrate W held by the substrate holding unit 2. In other words, the first processing liquid and the second processing liquid are exclusively discharged from the first nozzle 4a. Specifically, the first processing liquid and the second processing liquid are discharged from the tip of the first nozzle 4a. The first nozzle 4a discharges the first processing liquid and the second processing liquid perpendicularly to the upper surface of the substrate W. In the present embodiment, the first processing liquid is a chemical solution and the second processing liquid is a rinse solution. The first nozzle 4a selectively discharges either the chemical solution or the rinse solution toward the upper surface of the substrate W rotated by the substrate rotating unit 3. In the present embodiment, the first nozzle 4a further discharges the rinse solution (second processing liquid) from the standby position WP (see FIG. 3) toward the liquid receiving unit 202.

[0055] The second nozzle 5a discharges the third processing liquid from above the substrate W toward the upper surface of the substrate W held by the substrate holding unit 2. Specifically, the third processing liquid is discharged from the tip of the second nozzle 5a. In the present embodiment, the second nozzle 5a discharges the third processing liquid from a position outside the substrate holding unit 2 toward the upper surface of the substrate W rotated by the substrate rotating unit 3. The second nozzle 5a is fixed at a certain position. The second nozzle 5a may be referred to as a fixed nozzle. In the present embodiment, the third processing liquid is a rinse solution. Therefore, the second nozzle 5a discharges the rinse solution toward the upper surface of the substrate W.

[0056] The cup portion 8 receives the processing liquid (chemical solution and rinse solution) discharged from the substrate W and prevents the processing liquid (chemical solution and rinse solution) from scattering inside the processing chamber 201. Specifically, the cup portion 8 includes a guard portion 81 and a cup liquid receiving portion 82.

[0057] The guard portion 81 is disposed outside the substrate holding unit 2 and the substrate rotating unit 3. The guard portion 81 has a substantially cylindrical shape. In other words, the guard portion 81 surrounds the substrate holding unit 2 and the substrate rotating unit 3. The guard portion 81 receives the processing liquid (chemical solution and rinse solution) scattered from the rotating substrate W.

[0058] The cup liquid receiving portion 82 is connected to the lower end portion of the guard portion 81. The cup liquid receiving portion 82 is annular and forms an annular groove inside the guard portion 81. The processing liquid received by the guard portion 81 flows down to the cup liquid receiving portion 82 due to its own weight. Alternatively, the processing liquid received by the guard portion 81 bounces back from the guard portion 81 and falls into the cup liquid receiving portion 82 due to its own weight. As a result, the processing liquid (chemical liquid and rinse liquid) is collected in the groove of the cup liquid receiving portion 82.

[0059] The elevating portion 85 raises and lowers the cup portion 8. The elevating portion 85 is controlled by the control device 10 (control unit 11) (see FIG. 4). The elevating portion 85 may have, for example, a ball screw and an electric motor capable of forward and reverse rotation.

[0060] Specifically, the elevating portion 85 raises and lowers the cup portion 8 between the upper position and the lower position. The upper position is a position above the lower position. For example, when the substrate W is carried into the processing chamber 201 by the center robot CR (FIG. 1) or when the substrate W is carried out of the processing chamber 201 by the center robot CR (FIG. 1), the cup portion 8 is retracted to the lower position. The cup portion 8 is located at the upper position when receiving the processing liquid. In other words, the cup portion 8 is located at the upper position during substrate processing.

[0061] The liquid receiving portion 202 is disposed outside the substrate holding portion 2. The liquid receiving portion 202 receives the rinse liquid (second processing liquid) discharged from the first nozzle 4a located at the standby position WP (see FIG. 3). In the present embodiment, the liquid receiving portion 202 is disposed outside the cup portion 8. Specifically, the liquid receiving portion 202 is located below the standby position WP (see FIG. 3). The liquid receiving portion 202 is, for example, a standby pod.

[0062] The first drain pipe 9a discharges the processing liquid (chemical solution and rinse liquid) collected in the cup portion 8 from the cup portion 8. Specifically, the first drain pipe 9a is a tubular member through which the processing liquid flows. One end of the first drain pipe 9a is connected to the bottom of the cup portion 8. Specifically, one end of the first drain pipe 9a is connected to the bottom of the cup liquid receiving portion 82. The processing liquid collected in the cup portion 8 (cup liquid receiving portion 82) flows into the first drain pipe 9a. The first drain pipe 9a extends from the bottom of the cup portion 8 (cup liquid receiving portion 82) to the outside of the processing chamber 201. As a result, the processing liquid (chemical solution and rinse liquid) collected in the cup portion 8 is discharged to the outside of the processing chamber 201 through the first drain pipe 9a.

[0063] The drain tank 103 is disposed outside the processing chamber 201. In this embodiment, the other end of the first drain pipe 9a is connected to the drain tank 103. Therefore, the processing liquid (chemical solution and rinse liquid) discharged from the cup portion 8 (cup liquid receiving portion 82) is stored in the drain tank 103.

[0064] The second drain pipe 9b discharges the processing liquid (rinse liquid) collected in the liquid receiving portion 202 from the liquid receiving portion 202. Specifically, the second drain pipe 9b is a tubular member through which the processing liquid flows. One end of the second drain pipe 9b is connected to the bottom of the liquid receiving portion 202. The processing liquid collected in the liquid receiving portion 202 flows into the second drain pipe 9b. The second drain pipe 9b extends from the bottom of the liquid receiving portion 202 to the outside of the processing chamber 201. As a result, the processing liquid (rinse liquid) collected in the liquid receiving portion 202 is discharged to the outside of the processing chamber 201 through the second drain pipe 9b. In this embodiment, the other end of the second drain pipe 9b is connected to the drain tank 103. Therefore, the processing liquid (rinse liquid) discharged from the liquid receiving portion 202 is stored in the drain tank 103.

[0065] The first liquid supply line 41A selectively supplies either the first processing liquid (chemical solution) or the second processing liquid (rinse liquid) to the first nozzle 4a. In other words, the first processing liquid and the second processing liquid are exclusively supplied to the first nozzle 4a. The first liquid supply line 41A is controlled by the control device 10 (control unit 11) (see Fig. 4). Specifically, the first liquid supply line 41A includes a common pipe 42, a first rinse pipe 43a, a chemical solution on-off valve 44a, and a first rinse on-off valve 45a. The common pipe 42 and the first rinse pipe 43a are examples of the "supply pipe" and the "first supply pipe". The chemical solution on-off valve 44a and the first rinse on-off valve 45a are examples of the "on-off valve provided in the supply pipe" and the "first on-off valve".

[0066] A part of the common pipe 42 is housed inside the processing chamber 201. Another part of the common pipe 42 is housed inside the fluid box 102 described with reference to Fig. 1. A part of the first rinse pipe 43a, the chemical solution on-off valve 44a, and the first rinse on-off valve 45a are housed inside the fluid box 102 described with reference to Fig. 1.

[0067] One end of the common pipe 42 is connected to the first nozzle 4a. One end of the first rinse pipe 43a is connected to the common pipe 42 at the first connection position CP. The common pipe 42 and the first rinse pipe 43a are tubular members through which the processing liquid flows.

[0068] The common pipe 42 and the first rinse pipe 43a selectively supply either the chemical solution (first processing liquid) or the rinse liquid (second processing liquid) to the first nozzle 4a. Specifically, the common pipe 42 allows the chemical solution (first processing liquid) to flow to the first nozzle 4a. When the chemical solution (first processing liquid) flows through the common pipe 42 to the first nozzle 4a, the chemical solution (first processing liquid) is discharged from the first nozzle 4a. The first rinse pipe 43a allows the rinse liquid (second processing liquid) to flow to the common pipe 42. The common pipe 42 allows the rinse liquid (second processing liquid) that has flowed into the common pipe 42 from the first rinse pipe 43a to flow to the first nozzle 4a. As a result, the rinse liquid (second processing liquid) is discharged from the first nozzle 4a.

[0069] The chemical liquid on-off valve 44a is provided in the common pipe 42. The first rinse on-off valve 45a is provided in the first rinse pipe 43a. The chemical liquid on-off valve 44a and the first rinse on-off valve 45a are switchable between an open state and a closed state. The control device 10 (control unit 11) controls the opening and closing operations of the chemical liquid on-off valve 44a and the first rinse on-off valve 45a (see FIG. 4). The actuators of the chemical liquid on-off valve 44a and the first rinse on-off valve 45a are, for example, pneumatic actuators.

[0070] The chemical liquid on-off valve 44a controls the flow and stop of the chemical liquid (first treatment liquid) through the common pipe 42. In other words, the chemical liquid on-off valve 44a controls the supply and stop of the chemical liquid (first treatment liquid) to the first nozzle 4a. The first rinse on-off valve 45a controls the flow and stop of the rinse liquid (second treatment liquid) through the first rinse pipe 43a. In other words, the first rinse on-off valve 45a controls the supply and stop of the rinse liquid (second treatment liquid) to the common pipe 42.

[0071] When the control device 10 (control unit 11) supplies the chemical liquid (first treatment liquid) from the first nozzle 4a to the substrate W, it opens the chemical liquid on-off valve 44a and closes the first rinse on-off valve 45a. As a result, the chemical liquid (first treatment liquid) flows through the common pipe 42 toward the first nozzle 4a, and the chemical liquid (first treatment liquid) is discharged from the first nozzle 4a toward the substrate W.

[0072] When the control device 10 (control unit 11) supplies the rinse liquid (second treatment liquid) from the first nozzle 4a to the substrate W, it closes the chemical liquid on-off valve 44a and opens the first rinse on-off valve 45a. As a result, the rinse liquid (second treatment liquid) flows from the first rinse pipe 43a into the common pipe 42, and the rinse liquid that has flowed into the common pipe 42 flows through the common pipe 42 toward the first nozzle 4a, and the rinse liquid (second treatment liquid) is discharged from the first nozzle 4a toward the substrate W.

[0073] When the control device 10 (control unit 11) stops discharging the chemical solution (first processing liquid) and the rinse liquid (second processing liquid) by the first nozzle 4a, it closes the chemical solution on-off valve 44a and the first rinse on-off valve 45a. As a result, the flow of the chemical solution (first processing liquid) through the common pipe 42 stops, and the flow of the rinse liquid (second processing liquid) through the first rinse pipe 43a stops, and the discharge of the chemical solution (first processing liquid) and the rinse liquid (second processing liquid) by the first nozzle 4a stops.

[0074] The suck-back unit 7 performs a suction operation of sucking the processing liquid from the first liquid supply line 41A. The suck-back unit 7 is controlled by the control device 10 (control unit 11) (see FIG. 4). Specifically, the suck-back unit 7 has a suck-back line 71. The suck-back unit 7 sucks the processing liquid from the first liquid supply line 41A to the suck-back line 71. In the present embodiment, the suck-back line 71 has a suck-back pipe 72 and a suck-back valve 73.

[0075] The suck-back pipe 72 is a tubular member through which the processing liquid flows. The suck-back pipe 72 branches from the common pipe 42. Specifically, one end of the suck-back pipe 72 is connected to the common pipe 42 at the second connection position BP. The second connection position BP indicates a position closer to the first nozzle 4a than the first connection position CP. In other words, one end of the suck-back pipe 72 is connected to the common pipe 42 on the downstream side of the first connection position CP. A part of the suck-back pipe 72 is housed in the fluid box 102 described with reference to FIG. 1.

[0076] The suck-back valve 73 is provided in the suck-back pipe 72. The suck-back valve 73 is housed in the fluid box 102 described with reference to FIG. 1. In the present embodiment, the suck-back valve 73 performs a suction operation. By the suction operation of the suck-back valve 73, the processing liquid is sucked from the common pipe 42 to the suck-back pipe 72. The suction operation is performed, for example, after stopping the discharge of the chemical solution (first processing liquid) by the first nozzle 4a.

[0077] Specifically, the backflush pipe 72 includes an upstream pipe 721. One end of the upstream pipe 721 is connected to the common pipe 42. The other end of the upstream pipe 721 is connected to the backflush valve 73. The upstream pipe 721 communicates the common pipe 42 with the internal flow path of the backflush valve 73. The backflush valve 73 is openable and closable. That is, the backflush valve 73 can be switched between an open state and a closed state. The opening and closing operation of the backflush valve 73 is controlled by the control device 10 (control unit 11) (see FIG. 4).

[0078] The backflush valve 73 can change the volume of the internal flow path of the backflush valve 73. The backflush valve 73 increases the volume of the internal flow path when it is in the closed state. The backflush valve 73 decreases the volume of the internal flow path when it is in the open state. When the backflush valve 73 is in the open state, the flow rate of the processing liquid flowing through the backflush pipe 72 (the amount of the processing liquid flowing per unit time) is small. Therefore, the processing liquid flowing from the common pipe 42 into the backflush pipe 72 is likely to stay in the upstream pipe 721.

[0079] When the volume of the internal flow path of the backflush valve 73 increases, the processing liquid in the upstream pipe 721 is sucked into the inside of the backflush valve 73. That is, when the backflush valve 73 is in the closed state, a suction operation is performed, and the processing liquid in the upstream pipe 721 is sucked into the backflush valve 73. As a result, the processing liquid in the common pipe 42 flows into the backflush pipe 72 (upstream pipe 721) from the second connection position BP.

[0080] The processing liquid sucked into the backflush valve 73 is discharged from the backflush valve 73 to the downstream side of the backflush pipe 72 when the backflush valve 73 is in the open state. In the present embodiment, the other end of the backflush pipe 72 is connected to the drain tank 103. Therefore, the processing liquid flowing through the backflush pipe 72 is stored in the drain tank 103.

[0081] The second liquid supply line 51A supplies the third processing liquid (rinse liquid) to the second nozzle 5a. The second liquid supply line 51A is controlled by the control device 10 (control unit 11) (see FIG. 4). Specifically, the second liquid supply line 51A includes a second rinse pipe 52a and a second rinse on-off valve 53a. The second rinse pipe 52a is an example of the "second supply pipe", and the second rinse on-off valve 53a is an example of the "second on-off valve".

[0082] A part of the second rinse pipe 52a is accommodated in the processing chamber 201. Another part of the second rinse pipe 52a is accommodated in the fluid box 102 described with reference to FIG. 1. The second rinse on-off valve 53a is accommodated in the fluid box 102 described with reference to FIG. 1.

[0083] One end of the second rinse pipe 52a is connected to the second nozzle 5a. The second rinse pipe 52a is a tubular member through which the processing liquid flows. The second rinse pipe 52a supplies the rinse liquid (third processing liquid) to the second nozzle 5a. Specifically, the second rinse pipe 52a allows the rinse liquid (third processing liquid) to flow to the second nozzle 5a. When the rinse liquid (third processing liquid) flows through the second rinse pipe 52a to the second nozzle 5a, the rinse liquid (third processing liquid) is discharged from the second nozzle 5a.

[0084] The second rinse on-off valve 53a is provided on the second rinse pipe 52a. The second rinse on-off valve 53a is switchable between an open state and a closed state. The control device 10 (control unit 11) controls the opening and closing operation of the second rinse on-off valve 53a (see FIG. 4). The actuator of the second rinse on-off valve 53a is, for example, a pneumatic actuator.

[0085] The second rinse on-off valve 53a controls the flow of the rinse liquid (third processing liquid) through the second rinse pipe 52a and the stop of the flow. In other words, the second rinse pipe 52a controls the supply of the rinse liquid (third processing liquid) to the second nozzle 5a and the stop of the supply.

[0086] When the control device 10 (control unit 11) supplies the rinse liquid (third processing liquid) from the second nozzle 5a to the substrate W, it opens the second rinse on-off valve 53a. As a result, the rinse liquid (third processing liquid) flows through the second rinse pipe 52a toward the second nozzle 5a, and the rinse liquid (third processing liquid) is discharged from the second nozzle 5a toward the substrate W.

[0087] When the control device 10 (control unit 11) stops the discharge of the rinse liquid (third processing liquid) by the second nozzle 5a, it closes the second rinse on-off valve 53a. As a result, the flow of the rinse liquid (third processing liquid) through the second rinse pipe 52a stops, and the discharge of the rinse liquid (third processing liquid) from the second nozzle 5a stops.

[0088] Subsequently, with reference to FIGS. 1 to 5, the substrate processing apparatus 100 and the substrate processing method of the present embodiment will be described. The substrate processing method includes a method of processing the substrate W. FIG. 5 is a flowchart showing the substrate processing method of the present embodiment. The substrate processing method shown in FIG. 5 is executed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 4. Therefore, FIG. 5 shows the operation of the substrate processing apparatus 100 of the present embodiment. More specifically, FIG. 5 shows the flow of processing executed by the control unit 11 included in the substrate processing apparatus 100 of the present embodiment. The processing shown in FIG. 5 includes steps S1 to S9.

[0089] The processing shown in FIG. 5 starts, for example, when an operator instructs the substrate processing apparatus 100 to start substrate processing. When the processing shown in FIG. 5 starts, the control unit 11 controls the center robot CR to carry the substrate W into the processing chamber 201 (step S1). Then, the control unit 11 causes the substrate holding unit 2 to hold the substrate W. When the substrate holding unit 2 holds the substrate W, the control unit 11 controls the elevating unit 85 to move the cup unit 8 from the lower position to the upper position.

[0090] After moving the cup portion 8 from the lower position to the upper position, the control unit 11 controls the substrate rotation unit 3 to rotate the substrate W (step S2). When the rotation speed of the substrate W reaches a predetermined rotation speed, the control unit 11 executes a chemical solution treatment (step S3). As a result, the substrate W is processed by the chemical solution. Specifically, the control unit 11 controls the first liquid supply line 41A to supply a chemical solution (first treatment liquid) from the first nozzle 4a to the upper surface of the rotating substrate W. More specifically, the control unit 11 discharges a chemical solution (first treatment liquid) from the first nozzle 4a toward the substrate W horizontally held by the substrate holding unit 2.

[0091] When a predetermined time has elapsed since the start of the supply of the chemical solution (first treatment liquid) to the substrate W, the control unit 11 controls the first liquid supply line 41A to stop the discharge of the chemical solution by the first nozzle 4a. Then, the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4a to the standby position WP.

[0092] After moving the first nozzle 4a to the standby position WP, or during the movement of the first nozzle 4a, the control unit 11 starts the first rinse treatment (step S4). As a result, the chemical solution is washed away from the substrate W by the rinse liquid. Specifically, the control unit 11 controls the second rinse on-off valve 53a to discharge a rinse liquid (third treatment liquid) from the second nozzle 5a toward the upper surface of the substrate W held by the substrate holding unit 2. More specifically, the control unit 11 sets the second rinse on-off valve 53a to the open state. As a result, a rinse liquid (third treatment liquid) is discharged from the second nozzle 5a toward the upper surface of the rotating substrate W.

[0093] The control unit 11 further executes a replacement process in parallel with the process of discharging the rinse liquid (third treatment liquid) from the second nozzle 5a (first rinse treatment) (step S5). Therefore, the control unit 11 discharges a rinse liquid (third treatment liquid) from the second nozzle 5a during the execution of the replacement process (step S4).

[0094] Here, the replacement process indicates a process of causing the second processing liquid to flow into the sac-back portion 7 from the common pipe 42 by controlling the first rinse on-off valve 45a to discharge the second processing liquid from the first nozzle 4a located at the standby position WP. Specifically, in the replacement process, the second processing liquid flows into the sac-back pipe 72. The control unit 11 opens the sac-back valve 73 during the replacement process. Therefore, the sac-back valve 73 is open during the replacement process.

[0095] Specifically, the replacement process causes the second processing liquid to flow into the portion of the common pipe 42 downstream of the chemical liquid on-off valve 44a, the inside of the first nozzle 4a, and the sac-back portion 7 (sac-back pipe 72), and replaces the first processing liquid remaining in the portion of the common pipe 42 downstream of the chemical liquid on-off valve 44a, the first processing liquid remaining inside the first nozzle 4a, and the first processing liquid remaining in the sac-back portion 7 (sac-back pipe 72) with the second processing liquid. As a result, the amount of the first processing liquid remaining in the common pipe 42 and the sac-back portion 7 (sac-back pipe 72) decreases.

[0096] In this embodiment, in the replacement process, the rinse liquid flows into the portion of the common pipe 42 downstream of the chemical liquid on-off valve 44a, the inside of the first nozzle 4a, and the sac-back portion 7 (sac-back pipe 72), and the chemical liquid remaining in the portion of the common pipe 42 downstream of the chemical liquid on-off valve 44a, the chemical liquid remaining inside the first nozzle 4a, and the chemical liquid remaining in the sac-back portion 7 (sac-back pipe 72) are replaced with the rinse liquid. As a result, the amount of the chemical liquid remaining in the common pipe 42 and the sac-back portion 7 (sac-back pipe 72) decreases.

[0097] When a predetermined time has elapsed since the start of the first rinse process, the control unit 11 controls the second rinse on-off valve 53a to stop the discharge of the rinse liquid (third processing liquid) by the second nozzle 5a. Specifically, the control unit 11 closes the second rinse on-off valve 53a.

[0098] After the control unit 11 stops discharging the rinse liquid (third processing liquid) by the second nozzle 5a, it executes the second rinse process (step S6). As a result, the chemical liquid remaining on the substrate W even after the first rinse process is washed away by the rinse liquid.

[0099] Specifically, the control unit 11 controls the first liquid supply line 41A to discharge the rinse liquid (second processing liquid) from the first nozzle 4a toward the upper surface of the rotating substrate W. As a result, the rinse liquid (second processing liquid) is supplied from the first nozzle 4a toward the upper surface of the substrate W horizontally held by the substrate holding unit 2. The control unit 11 further executes a suction process while discharging the rinse liquid (second processing liquid) from the first nozzle 4a to the substrate W. Here, the suction process indicates a process of causing the suck-back unit 7 to perform a suction operation. In the present embodiment, the control unit 11 causes the suck-back valve 73 to perform a suction operation. By executing the suction process while discharging the rinse liquid (second processing liquid) from the first nozzle 4a to the substrate W, the rinse liquid (second processing liquid) is sucked from the common pipe 42 to the suck-back unit 7. In the present embodiment, the rinse liquid (second processing liquid) is sucked from the common pipe 42 to the suck-back pipe 72 by the suction process.

[0100] When a predetermined time has elapsed since the control unit 11 starts the second rinse process, it controls the first liquid supply line 41A to stop discharging the rinse liquid (second processing liquid) by the first nozzle 4a.

[0101] After the control unit 11 stops discharging the rinse liquid (second processing liquid) by the first nozzle 4a, it executes a drying process for drying the substrate W (step S7). Specifically, the control unit 11 controls the substrate rotation unit 3 to increase the rotation speed of the substrate W. As a result, the substrate W dries. Further, the control unit 11 controls the nozzle movement unit 6 to move the first nozzle 4a from the processing position TP to the standby position WP. When a predetermined time has elapsed since the rotation speed of the substrate W was increased, the control unit 11 controls the substrate rotation unit 3 to stop the rotation of the substrate W (step S8).

[0102] When the control unit 11 stops the rotation of the substrate W, it controls the elevating unit 85 to move the cup unit 8 from the upper position to the lower position. When the cup unit 8 moves to the lower position, the control unit 11 controls the substrate holding unit 2 to release the holding of the substrate W. Then, the control unit 11 controls the center robot CR to carry out the substrate W to the outside of the processing chamber 201 (step S9). As a result, the process shown in FIG. 5 ends.

[0103] Subsequently, with reference to FIGS. 1 to 6, the chemical solution treatment (step S3) shown in FIG. 5 will be described. FIG. 6 is a flowchart showing the flow of the chemical solution treatment. As shown in FIG. 6, when starting the chemical solution treatment, the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4a from the standby position WP to the processing position TP (step S31).

[0104] When the control unit 11 moves the first nozzle 4a to the processing position TP, it controls the chemical solution on-off valve 44a to discharge the chemical solution (first treatment liquid) from the first nozzle 4a toward the substrate W (step S32). Specifically, the control unit 11 opens the chemical solution on-off valve 44a. As a result, the chemical solution (first treatment liquid) is discharged from the first nozzle 4a located at the processing position TP toward the upper surface of the substrate W.

[0105] When a predetermined time has elapsed since the start of the discharge of the chemical solution (first treatment liquid), the control unit 11 controls the chemical solution on-off valve 44a to stop the discharge of the chemical solution (first treatment liquid) by the first nozzle 4a (step S33). Specifically, the control unit 11 closes the chemical solution on-off valve 44a.

[0106] When the control unit 11 stops discharging the chemical solution (first processing liquid), it executes a suction process (step S34). That is, the control unit 11 causes the suck-back unit 7 to perform a suction operation. As a result, the chemical solution in the common pipe 42 flows into the suck-back unit 7 from the second connection position BP, and the tip surface of the chemical solution in the first nozzle 4a retreats from the tip position of the first nozzle 4a. In the present embodiment, the control unit 11 causes the suck-back valve 73 to perform a suction operation. Specifically, the control unit 11 transitions the suck-back valve 73 from the open state to the closed state. As a result, the chemical solution is sucked from the upstream pipe 721 into the inside of the suck-back valve 73, the chemical solution in the common pipe 42 flows into the upstream pipe 721 (suck-back pipe 72) from the second connection position BP, and the tip surface of the chemical solution in the first nozzle 4a retreats from the tip position of the first nozzle 4a. Specifically, due to the suction operation, the tip surface of the chemical solution retreats to the suck-back pipe 72 (upstream pipe 721).

[0107] After the control unit 11 stops discharging the chemical solution (first processing liquid) by the first nozzle 4a, it controls the nozzle moving unit 6 to move the first nozzle 4a from the processing position TP to the standby position WP (step S35). In the present embodiment, when the control unit 11 executes the suction process, it controls the nozzle moving unit 6 to move the first nozzle 4a from the processing position TP to the standby position WP. As a result, the chemical solution processing shown in FIG. 6 (step S3) ends. Note that after the control unit 11 moves the first nozzle 4a to the standby position WP, it transitions the suck-back valve 73 from the closed state to the open state. As a result, the chemical solution (first processing liquid) sucked into the inside of the suck-back valve 73 is discharged from the suck-back valve 73 to the downstream side of the suck-back pipe 72.

[0108] Next, with reference to FIGS. 1 to 7, the replacement process (step S5) shown in FIG. 5 will be described. FIG. 7 is a flowchart showing the flow of the replacement process. As shown in FIG. 7, when starting the replacement process, the control unit 11 controls the first rinse on-off valve 45a to discharge the rinse liquid (second processing liquid) from the first nozzle 4a located at the standby position WP toward the liquid receiving portion 202 (step S51). At this time, the replacement process is executed. That is, the rinse liquid (second processing liquid) flows into the sac-back portion 7 from the common pipe 42. In the present embodiment, the rinse liquid (second processing liquid) flows into the sac-back pipe 72 from the common pipe 42.

[0109] Specifically, the control unit 11 opens the first rinse on-off valve 45a to allow the rinse liquid (second processing liquid) to flow from the first rinse pipe 43a into the common pipe 42. As a result, the rinse liquid flows into the portion of the common pipe 42 downstream of the chemical liquid on-off valve 44a, the inside of the first nozzle 4a, and the sac-back pipe 72, and the chemical liquid retained in the portion of the common pipe 42 downstream of the chemical liquid on-off valve 44a, the chemical liquid retained inside the first nozzle 4a, and the chemical liquid retained in the sac-back pipe 72 are replaced with the rinse liquid.

[0110] When a predetermined time has elapsed after the control unit 11 opens the first rinse on-off valve 45a, the control unit 11 controls the first rinse on-off valve 45a to stop the discharge of the rinse liquid (second processing liquid) by the first nozzle 4a (step S52). Specifically, the control unit 11 closes the first rinse on-off valve 45a. As a result, the replacement process (step S5) shown in FIG. 7 ends.

[0111] According to the present embodiment, as described with reference to FIG. 5, when the replacement process is being executed, the third processing liquid (rinse liquid) is supplied from the second nozzle 5a to the substrate W. Therefore, it is difficult for liquid breakage to occur on the upper surface of the substrate W during the execution of the replacement process.

[0112] Next, referring to FIGS. 1 to 8, the second rinsing process (step S6) shown in FIG. 5 will be described. FIG. 8 is a flowchart showing the flow of the second rinsing process. As shown in FIG. 8, when starting the second rinsing process, the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4a from the standby position WP to the processing position TP (step S61). Specifically, after executing the replacement process (step S5) described with reference to FIG. 7, the control unit 11 moves the first nozzle 4a from the standby position WP to the processing position TP.

[0113] When the control unit 11 moves the first nozzle 4a to the processing position TP, it controls the first rinse on-off valve 45a to discharge the rinse liquid (second processing liquid) from the first nozzle 4a located at the processing position TP (step S62). Specifically, the control unit 11 opens the first rinse on-off valve 45a. As a result, the rinse liquid (second processing liquid) is supplied from the first nozzle 4a to the upper surface of the rotating substrate W.

[0114] When the control unit 11 discharges the rinse liquid (second processing liquid) from the first nozzle 4a to the substrate W after moving it from the standby position WP to the processing position TP, it executes a suction process (step S63). As a result, when the rinse liquid (second processing liquid) is being discharged from the first nozzle 4a to the substrate W, the rinse liquid (second processing liquid) is sucked from the common pipe 42 to the suck-back portion 7. In this embodiment, the rinse liquid (second processing liquid) is sucked from the common pipe 42 to the suck-back pipe 72.

[0115] When a predetermined time has elapsed since the control unit 11 starts discharging the rinse liquid (second processing liquid) by the first nozzle 4a located at the processing position TP, it controls the first rinse on-off valve 45a to stop discharging the rinse liquid (second processing liquid) by the first nozzle 4a (step S64). Specifically, the control unit 11 closes the first rinse on-off valve 45a.

[0116] After stopping the discharge of the rinse liquid (second processing liquid), the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4a from the processing position TP to the standby position WP (step S65). As a result, the rinse process (step S6) shown in FIG. 8 ends. Note that after moving the first nozzle 4a to the standby position WP, the control unit 11 changes the suction back valve 73 from the closed state to the open state. As a result, the rinse liquid (second processing liquid) sucked into the suction back valve 73 is discharged from the suction back valve 73 to the downstream side of the suction back pipe 72.

[0117] As described above, Embodiment 1 of the present invention has been described with reference to FIGS. 1 to 8. According to Embodiment 1, the control unit 11 controls the chemical liquid on-off valve 44a and the first rinse on-off valve 45a to discharge the chemical liquid (first processing liquid) from the first nozzle 4a (step S3 in FIG. 5), and then discharges the rinse liquid (second processing liquid) from the first nozzle 4a toward the upper surface of the substrate W (step S6 in FIG. 5). Then, when the control unit 11 discharges the rinse liquid (second processing liquid) from the first nozzle 4a toward the upper surface of the substrate W, the control unit 11 causes the suction back unit 7 to perform a suction operation. Therefore, when the rinse liquid (second processing liquid) is supplied to the substrate W, it becomes difficult for the chemical liquid (first processing liquid) staying or remaining in the suction back unit 7 (suction back pipe 72) to flow into the common pipe 42. As a result, when the substrate W is being processed with the rinse liquid (second processing liquid), it becomes difficult for the substrate W to be processed with the chemical liquid (first processing liquid). Therefore, the substrate W can be processed with higher accuracy.

[0118] Furthermore, according to the present embodiment, before processing the substrate W with the rinse liquid (second processing liquid), the rinse liquid (second processing liquid) is discharged from the first nozzle 4a toward the liquid receiving portion 202. As a result, a replacement process is performed, and the amount of the chemical liquid (first processing liquid) staying or remaining in the common pipe 42 and the suction back unit 7 (suction back pipe 72) can be reduced before processing the substrate W with the rinse liquid (second processing liquid). As a result, when the substrate W is being processed with the rinse liquid (second processing liquid), it becomes even more difficult for the substrate W to be processed with the chemical liquid (first processing liquid).

[0119] For example, when the substrate processing performed by the substrate processing apparatus 100 is a process of etching the metal contained in the substrate W, if the etching solution (first processing solution) mixes into the rinse solution (second processing solution), the metal contained in the substrate W may be etched during the rinse process, and the etching amount of the metal to be processed may exceed the target amount. On the contrary, according to the present embodiment, the amount of the chemical solution (first processing solution) mixed into the rinse solution (second processing solution) can be reduced. Therefore, the possibility that the metal to be processed is etched more than the target amount can be reduced.

[0120] In addition, when the chemical solution (first processing solution) mixes into the rinse solution (second processing solution), there is a possibility that the substrate W and the chemical solution react during the rinse process to generate by-products and the number of particles increases. On the contrary, according to the present embodiment, the amount of the chemical solution (first processing solution) mixed into the rinse solution (second processing solution) can be reduced. Therefore, it is difficult for the number of particles to increase.

[0121] Also, when the suck-back unit 7 does not perform the suction operation when discharging the rinse solution (second processing solution) from the first nozzle 4a toward the upper surface of the substrate W, in order to make it difficult to occur a problem that the substrate W is processed by the chemical solution (first processing solution) when processing the substrate W with the rinse solution (second processing solution), for example, it is necessary to make the replacement processing time longer and reduce the amount of the chemical solution (first processing solution) staying or remaining in the common pipe 42 and the suck-back unit 7 (suck-back pipe 72). As a result, the amount of the second processing solution used for the replacement processing increases. On the contrary, according to the present embodiment, the suck-back unit 7 performs the suction operation when discharging the rinse solution (second processing solution) from the first nozzle 4a toward the upper surface of the substrate W. As a result, since it becomes difficult for the chemical solution (first processing solution) staying or remaining in the suck-back unit 7 (suck-back pipe 72) to flow into the common pipe 42, the replacement processing time can be shortened. Therefore, the amount of the second processing solution used for the replacement processing can be reduced.

[0122] [Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to FIGS. 9 to 12. However, matters different from Embodiment 1 will be described, and descriptions of matters the same as those in Embodiment 1 will be omitted. Embodiment 2 is different from Embodiment 1 in that a first liquid supply line 41B is provided in the substrate processing apparatus 100 instead of the first liquid supply line 41A. In the following description, the second rinse on-off valve 53a may be referred to as the "rinse on-off valve 53a".

[0123] FIG. 9 is a diagram schematically showing the inside of the substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. FIG. 9 further schematically shows the first liquid supply line 41B, the second liquid supply line 51A, and the suck-back unit 7 included in the substrate processing apparatus 100 of the present embodiment. As shown in FIG. 9, the substrate processing unit 200 has a first nozzle 4b instead of the first nozzle 4a shown in FIG. 2. Further, the substrate processing apparatus 100 includes a first liquid supply line 41B instead of the first liquid supply line 41A shown in FIG. 2.

[0124] In Embodiment 2, the first processing liquid is the first chemical solution, and the second processing liquid is the second chemical solution. Therefore, the first nozzle 4b selectively discharges either the first chemical solution (first processing liquid) or the second chemical solution (second processing liquid) from the processing position TP (see FIG. 3) toward the upper surface of the substrate W held by the substrate holding unit 2. The first chemical solution and the second chemical solution may be, for example, the same type of chemical solution in which the concentration of the first chemical solution is higher than that of the second chemical solution. In Embodiment 2, as in Embodiment 1, the first nozzle 4b discharges the second chemical solution (second processing liquid) from the standby position WP (see FIG. 3) toward the liquid receiving unit 202.

[0125] Similar to the first liquid supply line 41A, the first liquid supply line 41B is controlled by the control device 10 (control unit 11) to selectively supply either the first processing liquid (first chemical solution) or the second processing liquid (second chemical solution) to the first nozzle 4b. Specifically, the first liquid supply line 41B includes a common pipe 42, a chemical solution pipe 43b, a first chemical solution on-off valve 44b, and a second chemical solution on-off valve 45b. The common pipe 42 and the chemical solution pipe 43b are examples of the "supply pipe" and the "first supply pipe". The first chemical solution on-off valve 44b and the second chemical solution on-off valve 45b are examples of the "on-off valve provided in the supply pipe" and the "first on-off valve".

[0126] Similar to the common pipe 42 and the first rinse pipe 43a shown in FIG. 2, the common pipe 42 and the chemical solution pipe 43b selectively supply either the first chemical solution (first processing liquid) or the second chemical solution (second processing liquid) to the first nozzle 4b.

[0127] The first chemical solution on-off valve 44b is provided in the common pipe 42. The second chemical solution on-off valve 45b is provided in the chemical solution pipe 43b. The opening and closing operations of the first chemical solution on-off valve 44b and the second chemical solution on-off valve 45b are controlled by the control device 10 (control unit 11) in the same manner as the chemical solution on-off valve 44a and the first rinse on-off valve 45a shown in FIG. 2. Similar to the chemical solution on-off valve 44a shown in FIG. 2, the first chemical solution on-off valve 44b controls the flow and stop of the first chemical solution (first processing liquid) through the common pipe 42. Similar to the first rinse on-off valve 45a shown in FIG. 2, the second chemical solution on-off valve 45b controls the flow and stop of the second chemical solution (second processing liquid) through the chemical solution pipe 43b.

[0128] Next, with reference to FIGS. 9 to 12, the substrate processing apparatus 100 and the substrate processing method according to Embodiment 2 will be described. FIG. 10 is a flowchart showing the substrate processing method of the present embodiment. Specifically, FIG. 10 shows the flow of processing executed by the control unit 11 included in the substrate processing apparatus 100 of Embodiment 2, similar to FIG. 5. The processing shown in FIG. 10 includes steps S101 to S110. The processing shown in FIG. 10 starts, for example, when an operator instructs the substrate processing apparatus 100 to start substrate processing, similar to the processing shown in FIG. 5. Since the processing of steps S101 and S102 shown in FIG. 10 is the same as the processing of steps S1 and S2 shown in FIG. 5, the description thereof will be omitted.

[0129] The control unit 11 executes the first chemical solution treatment when the rotation speed of the substrate W reaches a predetermined rotation speed, similar to the processing described with reference to FIG. 5 (step S103). As a result, the substrate W is processed by the first chemical solution. Specifically, the control unit 11 controls the first liquid supply line 41B to supply the first chemical solution (first treatment liquid) from the first nozzle 4b to the upper surface of the rotating substrate W. Since the first chemical solution treatment is the same as the chemical solution treatment (step S3) described with reference to FIGS. 5 and 6, the detailed description thereof will be omitted.

[0130] The control unit 11 starts the first rinse treatment after moving the first nozzle 4b to the standby position WP or during the movement of the first nozzle 4b, similar to the processing described with reference to FIG. 5 (step S104). As a result, the first chemical solution is washed away from the substrate W by the rinse liquid. Since the first rinse treatment (step S104) is the same as the first rinse treatment (step S4) described with reference to FIG. 5, the detailed description thereof will be omitted.

[0131] The control unit 11 executes a replacement process in parallel with the process of discharging the rinse liquid (third processing liquid) from the second nozzle 5a (first rinse process) (step S105). Therefore, the control unit 11 discharges the rinse liquid (third processing liquid) from the second nozzle 5a during the execution of the replacement process (step S104). Here, the replacement process refers to a process of controlling the second chemical solution on-off valve 45b to discharge the second processing liquid from the first nozzle 4b located at the standby position WP, thereby allowing the second processing liquid to flow into the suck-back portion 7 from the common pipe 42. Specifically, due to the replacement process, the second processing liquid flows into the suck-back pipe 72. As already described, the control unit 11 opens the suck-back valve 73 during the replacement process. Therefore, the suck-back valve 73 is open during the replacement process.

[0132] Since the replacement process is the same as the replacement process described in Embodiment 1, a detailed description thereof will be omitted. In Embodiment 2, due to the replacement process, the second chemical solution flows into the portion of the common pipe 42 downstream of the first chemical solution on-off valve 44b, the inside of the first nozzle 4b, and the suck-back portion 7 (suck-back pipe 72), and the first chemical solution remaining in the portion of the common pipe 42 downstream of the first chemical solution on-off valve 44b, the first chemical solution remaining inside the first nozzle 4b, and the first chemical solution remaining in the suck-back portion 7 (suck-back pipe 72) are replaced with the second chemical solution. As a result, the amount of the first chemical solution remaining in the common pipe 42 and the suck-back portion 7 (suck-back pipe 72) decreases.

[0133] After the control unit 11 stops discharging the rinse liquid (third processing liquid) by the second nozzle 5a, it executes the second chemical solution process (step S106). As a result, the substrate W is processed with the second chemical solution.

[0134] Specifically, the control unit 11 controls the first liquid supply line 41B to discharge a second chemical solution (second processing liquid) from the first nozzle 4b toward the upper surface of the rotating substrate W. As a result, the second chemical solution (second processing liquid) is supplied from the first nozzle 4b toward the upper surface of the substrate W horizontally held by the substrate holding unit 2. The control unit 11 further executes a suction process when discharging the second chemical solution (second processing liquid) from the first nozzle 4b to the substrate W. By executing the suction process when discharging the second chemical solution (second processing liquid) from the first nozzle 4b to the substrate W, the second chemical solution (second processing liquid) is suctioned from the common pipe 42 to the sack-back portion 7. In the present embodiment, the second chemical solution (second processing liquid) is suctioned from the common pipe 42 to the sack-back pipe 72 by the suction process.

[0135] When a predetermined time has elapsed since the start of the second chemical solution treatment, the control unit 11 controls the first liquid supply line 41B to stop the discharge of the second chemical solution (second processing liquid) by the first nozzle 4b. Then, the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4b to the standby position WP.

[0136] After moving the first nozzle 4b to the standby position WP, or during the movement of the first nozzle 4b, the control unit 11 starts the second rinsing process (step S107). As a result, the second chemical solution is washed away from the substrate W by the rinsing liquid.

[0137] Specifically, the control unit 11 controls the rinse on-off valve 53a to discharge a rinsing liquid (third processing liquid) from the second nozzle 5a toward the upper surface of the substrate W held by the substrate holding unit 2. Specifically, the control unit 11 opens the rinse on-off valve 53a. As a result, the rinsing liquid (third processing liquid) is discharged from the second nozzle 5a toward the upper surface of the rotating substrate W.

[0138] When a predetermined time has elapsed since the start of the second rinsing process, the control unit 11 controls the rinse on-off valve 53a to stop the discharge of the rinsing liquid (third processing liquid) by the second nozzle 5a. Specifically, the control unit 11 closes the rinse on-off valve 53a.

[0139] After stopping the discharge of the rinse liquid (third processing liquid) by the second nozzle 5a, the control unit 11 executes a drying process for drying the substrate W (step S108). Since the processes of step S108, step S109, and step S110 shown in FIG. 10 are the same as those of step S7, step S8, and step S9 shown in FIG. 5, the description thereof will be omitted.

[0140] Subsequently, referring to FIGS. 9 to 11, the replacement process (step S105) shown in FIG. 10 will be described. FIG. 11 is a flowchart showing the flow of the replacement process. As shown in FIG. 11, when starting the replacement process, the control unit 11 controls the second chemical solution on-off valve 45b to discharge the second chemical solution (second processing liquid) from the first nozzle 4b located at the standby position WP toward the liquid receiving portion 202 (step S151). At this time, the replacement process is executed. That is, the second chemical solution (second processing liquid) flows into the sack-back portion 7 from the common pipe 42. In the present embodiment, the second chemical solution (second processing liquid) flows into the sack-back pipe 72 from the common pipe 42.

[0141] Specifically, the control unit 11 opens the second chemical solution on-off valve 45b to allow the second chemical solution (second processing liquid) to flow from the chemical solution pipe 43b into the common pipe 42. As a result, the second chemical solution flows into the portion of the common pipe 42 downstream of the first chemical solution on-off valve 44b, the inside of the first nozzle 4b, and the sack-back portion 7 (sack-back pipe 72), and the first chemical solution remaining in the portion of the common pipe 42 downstream of the first chemical solution on-off valve 44b, the first chemical solution remaining inside the first nozzle 4b, and the first chemical solution remaining in the sack-back portion 7 (sack-back pipe 72) are replaced with the second chemical solution.

[0142] When a predetermined time has elapsed after the control unit 11 opens the second chemical solution on-off valve 45b, the control unit 11 controls the second chemical solution on-off valve 45b to stop the discharge of the second chemical solution (second processing liquid) by the first nozzle 4b (step S152). Specifically, the control unit 11 closes the second chemical solution on-off valve 45b. As a result, the replacement process (step S105) shown in FIG. 11 ends.

[0143] Next, with reference to FIGS. 9 to 12, the second chemical solution treatment (step S106) shown in FIG. 10 will be described. FIG. 12 is a flowchart showing the flow of the second chemical solution treatment. As shown in FIG. 12, when starting the second chemical solution treatment, the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4b from the standby position WP to the treatment position TP (step S161). Specifically, after the execution of the replacement treatment (step S105) described with reference to FIG. 11, the control unit 11 moves the first nozzle 4b from the standby position WP to the treatment position TP.

[0144] When the control unit 11 moves the first nozzle 4b to the treatment position TP, it controls the second chemical solution on-off valve 45b to discharge the second chemical solution (second treatment solution) from the first nozzle 4b located at the treatment position TP (step S162). Specifically, the control unit 11 opens the second chemical solution on-off valve 45b. As a result, the second chemical solution (second treatment solution) is supplied from the first nozzle 4b to the upper surface of the rotating substrate W.

[0145] When the control unit 11 discharges the second chemical solution (second treatment solution) from the first nozzle 4b toward the substrate W after moving it from the standby position WP to the treatment position TP, it executes a suction process (step S163). As a result, when the second chemical solution (second treatment solution) is being discharged from the first nozzle 4b toward the substrate W, the second chemical solution (second treatment solution) is sucked from the common pipe 42 to the sack-back portion 7. In the present embodiment, the second chemical solution (second treatment solution) is sucked from the common pipe 42 to the sack-back pipe 72.

[0146] When a predetermined time has elapsed since the control unit 11 starts discharging the second chemical solution (second treatment solution) by the first nozzle 4b located at the treatment position TP, it controls the second chemical solution on-off valve 45b to stop discharging the second chemical solution (second treatment solution) by the first nozzle 4b (step S164). Specifically, the control unit 11 closes the second chemical solution on-off valve 45b.

[0147] When the control unit 11 closes the second chemical solution on-off valve 45b, it executes a suction process (step S165). That is, the control unit 11 causes the suck-back unit 7 to perform a suction operation. As a result, the second chemical solution in the common pipe 42 flows from the second connection position BP into the suck-back unit 7, and the tip surface of the second chemical solution in the first nozzle 4b retreats. In the present embodiment, the control unit 11 transitions the suck-back valve 73 from the closed state to the open state and then from the open state to the closed state.

[0148] When the suck-back valve 73 transitions from the closed state to the open state, the processing liquid sucked into the inside of the suck-back valve 73 by the suction process in step S163 is discharged to the downstream side of the suck-back pipe 72. Then, when the suck-back valve 73 transitions from the open state to the closed state, the second chemical solution is sucked from the upstream pipe 721 into the inside of the suck-back valve 73, and the second chemical solution in the common pipe 42 flows from the second connection position BP into the upstream pipe 721 (suck-back pipe 72), and the tip surface of the second chemical solution in the first nozzle 4b retreats. Specifically, the tip surface of the second chemical solution retreats to the suck-back pipe 72 (upstream pipe 721) by the suction operation.

[0149] After causing the suck-back unit 7 (suck-back valve 73) to perform a suction operation, the control unit 11 controls the nozzle moving unit 6 to move the first nozzle 4b from the processing position TP to the standby position WP (step S166). As a result, the second chemical solution processing (step S106) shown in FIG. 12 ends. Note that after moving the first nozzle 4b to the standby position WP, the control unit 11 transitions the suck-back valve 73 from the closed state to the open state. As a result, the second chemical solution (second processing liquid) sucked into the inside of the suck-back valve 73 is discharged from the suck-back valve 73 to the downstream side of the suck-back pipe 72.

[0150] The above described Embodiment 2 of the present invention with reference to FIGS. 9 to 12. According to Embodiment 2, similar to Embodiment 1, when supplying the second chemical solution to the substrate W, it becomes difficult for the first chemical solution staying or remaining in the sack-back portion 7 (sack-back pipe 72) to flow into the common pipe 42. As a result, it becomes difficult for a problem to occur in which the concentration of the chemical solution (second chemical solution) supplied to the substrate W during the second chemical solution treatment becomes equal to or higher than a predetermined value. Therefore, the substrate W can be processed with higher accuracy.

[0151] Further, according to the present embodiment, after processing the substrate W using a high-concentration chemical solution, the substrate W can be processed using a low-concentration chemical solution. Therefore, since the etching rate during the first chemical solution treatment can be made faster, the time required for substrate processing can be shortened. Furthermore, since the etching rate during the second chemical solution treatment can be made slower, the substrate W can be processed with higher accuracy.

[0152] In addition, in the present embodiment, the second rinse treatment is performed using the second nozzle 5a (fixed nozzle), but the substrate processing apparatus 100 may execute the second rinse treatment using a moving nozzle that moves between a processing position TP and a standby position WP different from the standby position.

[0153] Also, in the present embodiment, the first chemical solution and the second chemical solution are the same type of chemical solution in which the first chemical solution has a higher concentration than the second chemical solution, but the first chemical solution and the second chemical solution may be the same type of chemical solution in which the first chemical solution has a lower concentration than the second chemical solution.

[0154] [Embodiment 3] Subsequently, Embodiment 3 of the present invention will be described with reference to FIGS. 13 to 18. However, matters different from Embodiments 1 and 2 will be described, and descriptions of matters the same as those in Embodiments 1 and 2 will be omitted. Different from Embodiments 1 and 2, in Embodiment 3, the second nozzle 5b discharges a chemical solution. Also, different from Embodiments 1 and 2, in Embodiment 3, the second nozzle 5b is a moving nozzle.

[0155] FIG. 13 is a diagram schematically showing the inside of a substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. FIG. 13 further schematically shows a first liquid supply line 41A, a second liquid supply line 51B, a first sack-back part 7a, and a second sack-back part 7b included in the substrate processing apparatus 100 of the present embodiment. FIG. 14 is a plan view schematically showing the inside of the substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. FIG. 15 is a block diagram showing the configuration of the substrate processing apparatus 100 of the present embodiment.

[0156] As shown in FIGS. 13 and 14, the substrate processing unit 200 includes a processing chamber 201, a substrate holding part 2, a substrate rotating part 3, a first nozzle 4a, a second nozzle 5b, a first nozzle moving part 6a, a second nozzle moving part 6b, a cup part 8, a lifting part 85, a first liquid receiving part 202a, and a second liquid receiving part 202b. The substrate processing apparatus 100 includes a first drain pipe 9a, a second drain pipe 9b, a third drain pipe 9c, a fourth drain pipe 9d, a first liquid supply line 41A, a second liquid supply line 51B, a first sack-back part 7a, a second sack-back part 7b, a first drain tank 103a, and a second drain tank 103b. In the following description, the first rinse pipe 43a may be referred to as the "rinse pipe 43a". Similarly, the first rinse on-off valve 45a may be referred to as the "rinse on-off valve 45a".

[0157] As shown in FIG. 13, the processing chamber 201 houses the substrate holding part 2, the substrate rotating part 3, the first nozzle 4a, the second nozzle 5b, the first nozzle moving part 6a, the second nozzle moving part 6b, the cup part 8, the lifting part 85, the first liquid receiving part 202a, the second liquid receiving part 202b, a part of the first drain pipe 9a, a part of the second drain pipe 9b, a part of the third drain pipe 9c, a part of the fourth drain pipe 9d, a part of the first liquid supply line 41A, and a part of the second liquid supply line 51B.

[0158] As shown in FIG. 14, the first nozzle moving unit 6a moves the first nozzle 4a between the processing position TP (first processing position) and the first standby position WP1. In the present embodiment, the first standby position WP1 is a position facing the first liquid receiving portion 202a. The first nozzle moving unit 6a is controlled by the control device 10 (control unit 11) (see FIG. 15).

[0159] Specifically, the first nozzle moving unit 6a moves the first nozzle 4a in the vertical direction and the horizontal direction in the same manner as the nozzle moving unit 6 described with reference to FIG. 2. Specifically, as shown in FIG. 13, the first nozzle moving unit 6a includes a first arm 61a, a first base 62a, and a first nozzle moving mechanism 63a. Since the configuration of the first nozzle moving unit 6a is the same as that of the nozzle moving unit 6 described with reference to FIG. 2, the description thereof is omitted.

[0160] As shown in FIG. 14, the second nozzle moving unit 6b moves the second nozzle 5b between the processing position TP (second processing position) and the second standby position WP2. The second standby position WP2 is a position outside the substrate holding unit 2, similar to the first standby position WP1. In the present embodiment, the second standby position WP2 is a position facing the second liquid receiving portion 202b. The second nozzle moving unit 6b is controlled by the control device 10 (control unit 11) (see FIG. 15).

[0161] Specifically, the second nozzle moving unit 6b moves the second nozzle 5b in the vertical direction and the horizontal direction. Specifically, as shown in FIG. 13, the second nozzle moving unit 6b includes a second arm 61b, a second base 62b, and a second nozzle moving mechanism 63b. Since the configuration of the second nozzle moving unit 6b is the same as that of the nozzle moving unit 6 described with reference to FIG. 2, except that the second nozzle moving mechanism 63b rotates the second base 62b in both the forward and reverse directions about the third rotation axis AX3 extending in the vertical direction, a detailed description thereof is omitted.

[0162] The first nozzle 4a selectively discharges either the first processing liquid or the second processing liquid from the processing position TP (see FIG. 14) toward the upper surface of the substrate W held by the substrate holding unit 2. In the present embodiment, the first processing liquid is the first chemical solution, and the second processing liquid is the rinse liquid. The first chemical solution may be an alkaline chemical solution such as SC1 or aqueous ammonia. The rinse liquid may be an acidic rinse liquid such as carbonated water.

[0163] The second nozzle 5b discharges the third processing liquid from the processing position TP (see FIG. 14) toward the upper surface of the substrate W held by the substrate holding unit 2. The second nozzle 5b discharges the third processing liquid perpendicularly to the upper surface of the substrate W. In the present embodiment, the third processing liquid is the second chemical solution. The second nozzle 5b discharges the second chemical solution toward the upper surface of the substrate W rotated by the substrate rotating unit 3. The second chemical solution is, for example, sulfuric acid.

[0164] As shown in FIG. 13, the cup portion 8 includes a first cup portion 8a and a second cup portion 8b. The first cup portion 8a includes a first guard portion 81a and a first cup liquid receiving portion 82a. The second cup portion 8b includes a second guard portion 81b and a second cup liquid receiving portion 82b. Since the configuration of the first cup portion 8a is the same as that of the cup portion 8 described with reference to FIG. 2, a detailed description thereof will be omitted.

[0165] The second guard portion 81b is disposed outside the first guard portion 81a. The second guard portion 81b has a substantially cylindrical shape. In other words, the second guard portion 81b surrounds the first guard portion 81a.

[0166] The second cup liquid receiving portion 82b is connected to the lower end portion of the second guard portion 81b. The second cup liquid receiving portion 82b is annular and forms an annular groove inside the second guard portion 81b. Similar to the cup portion 8 described with reference to FIG. 2, the processing liquid received by the second guard portion 81b is collected in the groove of the second cup liquid receiving portion 82b.

[0167] The elevating part 85 elevates and lowers the first cup part 8a and the second cup part 8b individually. The elevating part 85 is controlled by the control device 10 (control part 11) (see Fig. 15). When the elevating part 85 receives the processing liquid discharged from the substrate W with the first cup part 8a, it moves the first cup part 8a to the upper position. When the elevating part 85 receives the processing liquid discharged from the substrate W with the second cup part 8b, it makes the first cup part 8a standby at the lower position. As a result, the second guard part 81b receives the processing liquid scattered from the rotating substrate W. When the substrate W is carried into the processing chamber 201 by the center robot CR (Fig. 1) or when the substrate W is carried out of the processing chamber 201 by the center robot CR (Fig. 1), the first cup part 8a and the second cup part 8b are retracted to the lower position.

[0168] In this embodiment, when the processing liquid is discharged from the first nozzle 4a toward the substrate W, the control device 10 (control part 11) moves the first cup part 8a to the upper position. Therefore, the first cup part 8a receives the first chemical solution and the rinse liquid. Also, when the processing liquid is discharged from the second nozzle 5b toward the substrate W, the control device 10 (control part 11) makes the first cup part 8a standby at the lower position. Therefore, the second cup part 8b receives the second chemical solution.

[0169] The configuration of the first drain pipe 9a is substantially the same as the first drain pipe 9a described with reference to Fig. 2. One end of the first drain pipe 9a is connected to the bottom of the first cup part 8a (first cup liquid receiving part 82a), and the other end of the first drain pipe 9a is connected to the first drain tank 103a. The first drain tank 103a is arranged outside the processing chamber 201.

[0170] The configuration of the second drain pipe 9b is substantially the same as the second drain pipe 9b described with reference to Fig. 2. One end of the second drain pipe 9b is connected to the bottom of the first liquid receiving part 202a, and the other end of the second drain pipe 9b is connected to the first drain tank 103a.

[0171] The configuration of the third liquid discharge pipe 9c is the same as that of the first liquid discharge pipe 9a. One end of the third liquid discharge pipe 9c is connected to the bottom of the second cup portion 8b (the second cup liquid receiving portion 82b), and the other end of the third liquid discharge pipe 9c is connected to the second drain tank 103b. The second drain tank 103b is arranged outside the processing chamber 201, similar to the first drain tank 103a.

[0172] The configuration of the fourth liquid discharge pipe 9d is the same as that of the second liquid discharge pipe 9b. One end of the fourth liquid discharge pipe 9d is connected to the bottom of the second liquid receiving portion 202b, and the other end of the fourth liquid discharge pipe 9d is connected to the second drain tank 103b.

[0173] The first suck-back portion 7a performs a sucking operation of sucking the processing liquid from the first liquid supply line 41A, similar to the suck-back portion 7 described with reference to FIG. 2. The first suck-back portion 7a is controlled by the control device 10 (control unit 11) (see FIG. 15). Specifically, the first suck-back portion 7a has a first suck-back line 71a. The first suck-back portion 7a is controlled by the control device 10 (control unit 11) to suck the processing liquid from the first liquid supply line 41A into the first suck-back line 71a. In the present embodiment, the first suck-back line 71a has a first suck-back pipe 72a and a first suck-back valve 73a. Since the configuration of the first suck-back portion 7a is the same as that of the suck-back portion 7 described with reference to FIG. 2, the description thereof is omitted. Note that the other end of the first suck-back pipe 72a is connected to the first drain tank 103a. Therefore, the processing liquid flowing through the first suck-back pipe 72a is stored in the first drain tank 103a. In the following description, the upstream pipe 721 of the first suck-back pipe 72a may be referred to as "upstream pipe 721a".

[0174] The second liquid supply line 51B supplies the third processing liquid (second chemical solution) to the second nozzle 5b. The second liquid supply line 51B is controlled by the control device 10 (control unit 11) (see FIG. 15). Specifically, the second liquid supply line 51B includes a chemical solution pipe 52b and a chemical solution on-off valve 53b. The chemical solution pipe 52b is an example of a "second supply pipe", and the chemical solution on-off valve 53b is an example of a "second on-off valve". Hereinafter, in order to distinguish between the chemical solution on-off valve 44a and the chemical solution on-off valve 53b, the chemical solution on-off valve 44a may be described as the "first chemical solution on-off valve 44a", and the chemical solution on-off valve 53b may be described as the "second chemical solution on-off valve 53b". Since the configuration of the second liquid supply line 51B is substantially the same as that of the second liquid supply line 51A described with reference to FIG. 2, its description will be omitted.

[0175] Similar to the first suck-back part 7a, the second suck-back part 7b performs a sucking operation to suck the processing liquid from the second liquid supply line 51B. The second suck-back part 7b is controlled by the control device 10 (control unit 11) (see FIG. 15). Specifically, the second suck-back part 7b has a second suck-back line 71b. The second suck-back part 7b is controlled by the control device 10 (control unit 11) to suck the third processing liquid (second chemical solution) from the second liquid supply line 51B into the second suck-back line 71b. In the present embodiment, the second suck-back line 71b includes a second suck-back pipe 72b and a second suck-back valve 73b. The second suck-back pipe 72b branches from the chemical solution pipe 52b. In other words, one end of the second suck-back pipe 72b is connected to the chemical solution pipe 52b. Similar to the first suck-back pipe 72a, the second suck-back pipe 72b includes an upstream pipe 721b.

[0176] Since the configuration of the second suck-back part 7b is the same as that of the suck-back part 7 described with reference to FIG. 2, its description will be omitted. Note that the other end of the second suck-back pipe 72b is connected to the second drain tank 103b. Therefore, the third processing liquid (second chemical solution) flowing through the second suck-back pipe 72b is stored in the second drain tank 103b.

[0177] Next, with reference to FIGS. 13 to 18, the substrate processing apparatus 100 and the substrate processing method according to Embodiment 3 will be described. FIG. 16 is a flowchart showing the substrate processing method of the present embodiment. Specifically, FIG. 16 shows the flow of processing executed by the control unit 11 included in the substrate processing apparatus 100 of the present embodiment, similarly to FIG. 5. The processing shown in FIG. 16 includes steps S201 to S210. The processing shown in FIG. 16 is started, for example, when an operator instructs the substrate processing apparatus 100 to start substrate processing, similarly to the processing shown in FIG. 5. Since the processing in steps S201 and S202 shown in FIG. 16 is the same as the processing in steps S1 and S2 shown in FIG. 5, the description thereof will be omitted.

[0178] When the rotation speed of the substrate W reaches a predetermined rotation speed, the control unit 11 executes the first chemical solution treatment (step S203). As a result, the substrate W is processed by the first chemical solution. Specifically, the control unit 11 controls the first liquid supply line 41A to supply the first chemical solution (first treatment liquid) from the first nozzle 4a to the upper surface of the rotating substrate W.

[0179] When a predetermined time has elapsed since the supply of the first chemical solution (first treatment liquid) to the substrate W was started, the control unit 11 controls the first liquid supply line 41A to stop the discharge of the first chemical solution (first treatment liquid) from the first nozzle 4a.

[0180] When the control unit 11 stops the discharge of the first chemical solution, the control unit 11 executes the first rinse treatment while maintaining the position of the first nozzle 4a at the processing position TP (step S204). As a result, the first chemical solution is washed away from the substrate W by the rinse liquid. Specifically, the control unit 11 controls the first liquid supply line 41A to supply the rinse liquid (second treatment liquid) from the first nozzle 4a to the upper surface of the rotating substrate W.

[0181] During the first rinsing process, the rinsing liquid flows into the portion of the common pipe 42 downstream of the first chemical solution on-off valve 44a, the inside of the first nozzle 4a, and the upstream pipe 721a (the first suck-back portion 7a) of the first suck-back pipe 72a, and contacts the first chemical solution retained in the portion of the common pipe 42 downstream of the first chemical solution on-off valve 44a, the first chemical solution retained inside the first nozzle 4a, and the first chemical solution retained in the upstream pipe 721a (the first suck-back portion 7a) of the first suck-back pipe 72a. In this embodiment, since the first chemical solution is an alkaline chemical solution and the rinsing liquid is an acidic rinsing liquid, a neutralization reaction occurs due to the contact between the first chemical solution and the rinsing liquid. Therefore, it becomes difficult for the first chemical solution to crystallize inside the common pipe 42 and the first suck-back pipe 72a.

[0182] When a predetermined time has elapsed since the start of the supply of the rinsing liquid (the second processing liquid) to the substrate W, the control unit 11 controls the first liquid supply line 41A to stop the discharge of the rinsing liquid (the second processing liquid) by the first nozzle 4a. Then, the control unit 11 controls the first nozzle moving unit 6a to move the first nozzle 4a to the first standby position WP1.

[0183] After moving the first nozzle 4a to the first standby position WP1, or during the movement of the first nozzle 4a, the control unit 11 starts the second chemical solution treatment (step S205). As a result, the substrate W is treated with the second chemical solution. The second chemical solution treatment is substantially the same as the chemical solution treatment shown in FIG. 6.

[0184] Specifically, the control unit 11 controls the second nozzle moving unit 6b to move the second nozzle 5b from the second standby position WP2 to the processing position TP. When the control unit 11 moves the second nozzle 5b to the processing position TP, the control unit 11 controls the second chemical solution on-off valve 53b to discharge the second chemical solution (the third processing liquid) from the second nozzle 5b located at the processing position TP toward the substrate W. Specifically, the control unit 11 opens the second chemical solution on-off valve 53b.

[0185] When a predetermined time has elapsed since the control unit 11 starts discharging the second chemical solution (third processing solution), the control unit 11 controls the second chemical solution on-off valve 53b to stop discharging the second chemical solution (third processing solution) by the second nozzle 5b. Specifically, the control unit 11 closes the second chemical solution on-off valve 53b.

[0186] When the control unit 11 stops discharging the second chemical solution (third processing solution), the control unit 11 executes a suction process. That is, the control unit 11 causes the second suck-back unit 7b to perform a suction operation. In the present embodiment, the control unit 11 causes the second suck-back valve 73b to perform a suction operation. As a result, the tip surface of the second chemical solution in the second nozzle 5b retreats from the tip position of the second nozzle 5b. Specifically, the tip surface of the second chemical solution retreats to the second suck-back pipe 72b (upstream pipe 721b) by the suction operation.

[0187] After the control unit 11 stops discharging the second chemical solution (third processing solution) by the second nozzle 5b, the control unit 11 controls the second nozzle moving unit 6b to move the second nozzle 5b from the processing position TP to the second standby position WP2. In the present embodiment, after the control unit 11 causes the second suck-back unit 7b (second suck-back valve 73b) to perform a suction operation, the control unit 11 controls the second nozzle moving unit 6b to move the second nozzle 5b from the processing position TP to the second standby position WP2. Note that after the control unit 11 moves the second nozzle 5b to the second standby position WP2, the control unit 11 transitions the second suck-back valve 73b from the closed state to the open state. As a result, the second chemical solution (third processing solution) sucked into the second suck-back valve 73b is discharged from the second suck-back valve 73b to the downstream side of the second suck-back pipe 72b.

[0188] The control unit 11 executes a replacement process in parallel with the process of discharging the second chemical solution (third processing solution) from the second nozzle 5b (second chemical solution process) (step S206). Therefore, the control unit 11 discharges the second chemical solution (third processing solution) from the second nozzle 5b during the execution of the replacement process (step S205). As already described, the control unit 11 opens the first suck-back valve 73a during the replacement process. Therefore, the first suck-back valve 73a is open during the replacement process.

[0189] Since the replacement process is the same as the replacement process (step S5) described with reference to FIGS. 5 and 7, the description thereof is omitted. In the present embodiment, by the replacement process, the portion of the common pipe 42 downstream of the first chemical liquid on-off valve 44a, the inside of the first nozzle 4a, and the first sac-back portion 7a (first sac-back pipe 72a) are filled with the rinse liquid, and the first chemical liquid remaining in the portion of the common pipe 42 downstream of the first chemical liquid on-off valve 44a, the first chemical liquid remaining inside the first nozzle 4a, and the first chemical liquid remaining in the first sac-back portion 7a (first sac-back pipe 72a) are replaced with the second chemical liquid. As a result, the amount of the first chemical liquid remaining in the common pipe 42 and the first sac-back portion 7a (first sac-back pipe 72a) decreases.

[0190] After moving the second nozzle 5b from the processing position TP to the second standby position WP2, the control unit 11 executes the second rinse process (step S207). Since the second rinse process is the same as the second rinse process (step S6) described with reference to FIGS. 5 and 8, the description thereof is omitted. Further, since the processes of steps S208 to S210 are the same as steps S7 to S9 shown in FIG. 5, the description thereof is omitted.

[0191] Subsequently, the first chemical liquid process (step S203) and the first rinse process (step S204) shown in FIG. 16 will be further described. FIG. 17 is a flowchart showing the flow of the first chemical liquid process. FIG. 18 is a flowchart showing the flow of the first rinse process. As shown in FIG. 17, when starting the first chemical liquid process, the control unit 11 controls the first nozzle moving unit 6a to move the first nozzle 4a from the first standby position WP1 to the processing position TP (step S231).

[0192] When the control unit 11 moves the first nozzle 4a to the processing position TP, it controls the first chemical liquid on-off valve 44a to discharge the first chemical liquid (first processing liquid) from the first nozzle 4a toward the substrate W (step S232). Specifically, the control unit 11 opens the first chemical liquid on-off valve 44a.

[0193] When a predetermined time has elapsed since the control unit 11 starts discharging the first chemical solution (first processing solution), the control unit 11 controls the first chemical solution on-off valve 44a to stop discharging the first chemical solution (first processing solution) from the first nozzle 4a (step S233). Specifically, the control unit 11 closes the first chemical solution on-off valve 44a.

[0194] When the control unit 11 stops discharging the first chemical solution (first processing solution), it executes a suction process (step S234). That is, the control unit 11 causes the first suck-back unit 7a to perform a suction operation. In this embodiment, the control unit 11 causes the first suck-back valve 73a to perform a suction operation. As a result, the tip surface of the first chemical solution retreats to the first suck-back pipe 72a (upstream pipe 721a).

[0195] As shown in FIG. 18, after executing the suction process, the control unit 11 controls the rinse on-off valve 45a to discharge a rinse solution (second processing solution) from the first nozzle 4a located at the processing position TP toward the substrate W (step S241). Specifically, the control unit 11 opens the rinse on-off valve 45a. Note that the first suck-back valve 73a maintains a closed state during the execution of the first rinse process.

[0196] When a predetermined time has elapsed since the control unit 11 starts discharging the rinse solution (second processing solution), the control unit 11 controls the rinse on-off valve 45a to stop discharging the rinse solution (second processing solution) from the first nozzle 4a (step S242). Specifically, the control unit 11 closes the rinse on-off valve 45a.

[0197] After stopping the discharge of the rinse liquid (second processing liquid), the control unit 11 controls the first nozzle moving unit 6a to move the first nozzle 4a from the processing position TP to the first standby position WP1 (step S243). As a result, the processes shown in FIGS. 17 and 18 (step S203 and step S204) are completed. Note that, for example, after moving the first nozzle 4a to the first standby position WP1, the control unit 11 transitions the first suck-back valve 73a from the closed state to the open state. As a result, the first chemical solution (first processing liquid) sucked into the first suck-back valve 73a is discharged from the first suck-back valve 73a to the downstream side of the first suck-back pipe 72a.

[0198] As described above, Embodiment 3 of the present invention has been described with reference to FIGS. 13 to 18. According to Embodiment 3, a suction process is executed during the second rinse process (step S207) after the second chemical solution process (step S205). Therefore, the substrate W can be processed with higher accuracy.

[0199] Specifically, by the suction process, the amount of the first chemical solution (first processing liquid) mixed into the rinse liquid (second processing liquid) supplied to the substrate W to wash away the second chemical solution (third processing liquid) on the substrate W can be reduced. As a result, the amount of by-products generated by the reaction between the first chemical solution and the second chemical solution is reduced. Therefore, an increase in the number of particles can be suppressed. In addition, the generation of heat (reaction heat) caused by the reaction between the first chemical solution and the second chemical solution can be suppressed.

[0200] Furthermore, according to the present embodiment, a replacement process (step S206) is executed in parallel with the second chemical solution process. Therefore, the amount of the first chemical solution (first processing liquid) mixed into the rinse liquid (second processing liquid) supplied to the substrate W to wash away the second chemical solution (third processing liquid) on the substrate W can be further reduced.

[0201] [Embodiment 4] Next, Embodiment 4 of the present invention will be described with reference to FIGS. 19 to 22. However, matters different from Embodiments 1 to 3 will be described, and descriptions of matters the same as those in Embodiments 1 to 3 will be omitted. Different from Embodiments 1 to 3, in Embodiment 4, the second nozzle 5c selectively discharges either the chemical solution or the rinse solution. In the following description, in order to distinguish between the chemical solution discharged from the first nozzle 4a and the chemical solution discharged from the second nozzle 5c, the chemical solution discharged from the first nozzle 4a may be described as the "first chemical solution", and the chemical solution discharged from the second nozzle 5c may be described as the "second chemical solution".

[0202] FIG. 19 is a diagram schematically showing the inside of a substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. FIG. 19 further schematically shows a first liquid supply line 41A, a second liquid supply line 51C, a first suck-back unit 7a, and a second suck-back unit 7b included in the substrate processing apparatus 100 of the present embodiment. FIG. 20 is a block diagram showing the configuration of the substrate processing apparatus 100 of the present embodiment.

[0203] As shown in FIG. 19, the substrate processing unit 200 includes a processing chamber 201, a substrate holding unit 2, a substrate rotating unit 3, a first nozzle 4a, a second nozzle 5c, a first nozzle moving unit 6a, a second nozzle moving unit 6b, a cup unit 8, a lifting unit 85, a first liquid receiving unit 202a, and a second liquid receiving unit 202b. The substrate processing apparatus 100 includes first to fourth drain pipes 9a to 9d, a first liquid supply line 41A, a second liquid supply line 51C, a first suck-back unit 7a, a second suck-back unit 7b, a first drain tank 103a, and a second drain tank 103b. In the following description, the common pipe 42 may be described as the "first common pipe 42", and the chemical solution on-off valve 44a may be described as the "first chemical solution on-off valve 44a".

[0204] In the present embodiment, the second nozzle 5c selectively discharges either the third processing liquid or the fourth processing liquid toward the upper surface of the substrate W held by the substrate holding unit 2 from the processing position TP (see FIG. 14). In other words, the third processing liquid and the fourth processing liquid are exclusively discharged from the second nozzle 5c. In the present embodiment, the third processing liquid is the second chemical solution, and the fourth processing liquid is the rinse liquid. The second chemical solution may be an acidic chemical solution such as hydrofluoric acid, dilute hydrofluoric acid, or SC2. The fourth processing liquid may be a rinse liquid of the same type as the second processing liquid or a rinse liquid of a different type from the second processing liquid. For example, the fourth processing liquid (rinse liquid) may be DIW.

[0205] The second liquid supply line 51C selectively supplies either the third processing liquid (the second chemical solution) or the fourth processing liquid (the rinse liquid) to the second nozzle 5c. In other words, the third processing liquid (the second chemical solution) and the fourth processing liquid (the rinse liquid) are exclusively supplied to the second nozzle 5c. The second liquid supply line 51C is controlled by the control device 10 (control unit 11) (see FIG. 20). Specifically, the second liquid supply line 51C includes a second common pipe 54, a second rinse pipe 55, a second chemical solution on-off valve 56, and a second rinse on-off valve 57. The second common pipe 54 and the second rinse pipe 55 are an example of the "second supply pipe". The second chemical solution on-off valve 56 and the second rinse on-off valve 57 are an example of the "second on-off valve".

[0206] Since the configuration of the second liquid supply line 51C is substantially the same as that of the first liquid supply line 41A, a detailed description thereof will be omitted. Also, since the configuration of the second suck-back portion 7b is the same as that of the second suck-back line 71b described with reference to FIG. 13 except that the second suck-back pipe 72b branches from the second common pipe 54, a detailed description thereof will be omitted.

[0207] Next, with reference to FIGS. 19 to 22, the substrate processing apparatus 100 and the substrate processing method according to Embodiment 4 will be described. FIG. 21 is a flowchart showing the substrate processing method of the present embodiment. Specifically, FIG. 21 shows the flow of processing executed by the control unit 11 included in the substrate processing apparatus 100 of the present embodiment, similar to FIG. 5. The processing shown in FIG. 21 includes steps S301 to S309. The processing shown in FIG. 21 starts, for example, when an operator instructs the substrate processing apparatus 100 to start substrate processing, similar to the processing shown in FIG. 5. Since the processing of steps S301 to S303 shown in FIG. 21 is the same as that of steps S201 to S203 shown in FIG. 16, the description thereof will be omitted.

[0208] When the control unit 11 stops discharging the first chemical solution, it executes the first rinse process (step S304). As a result, the first chemical solution is washed away from the substrate W by the rinse solution. Specifically, the control unit 11 controls the first liquid supply line 41A to supply a rinse solution (second processing solution) from the first nozzle 4a to the upper surface of the rotating substrate W. In the present embodiment, a suction process is executed in parallel with the first rinse process.

[0209] When a predetermined time has elapsed since the control unit 11 starts supplying the rinse solution (second processing solution) to the substrate W, the control unit 11 controls the first liquid supply line 41A to stop discharging the rinse solution (second processing solution) by the first nozzle 4a. Then, the control unit 11 controls the first nozzle moving unit 6a to move the first nozzle 4a to the first standby position WP1.

[0210] After moving the first nozzle 4a to the first standby position WP1 or during the movement of the first nozzle 4a, the control unit 11 starts the second chemical solution treatment (step S305). As a result, the substrate W is treated with the second chemical solution. Specifically, the second chemical solution (third treatment liquid) is discharged from the second nozzle 5c toward the upper surface of the substrate W. When a predetermined time has elapsed since the control unit 11 started supplying the second chemical solution (third treatment liquid) to the substrate W, the control unit 11 starts the second rinsing treatment (step S306). As a result, the second chemical solution is washed away from the substrate W with the rinsing liquid. Specifically, the rinsing liquid (fourth treatment liquid) is discharged from the second nozzle 5c toward the upper surface of the substrate W.

[0211] In this embodiment, a suction process is executed in parallel with the second rinsing process. Note that since the second chemical solution treatment (step S305) and the second rinsing treatment (step S306) are substantially the same as the first chemical solution treatment (step S303) and the first rinsing treatment (step S304), detailed descriptions thereof are omitted.

[0212] When the control unit 11 stops discharging the rinsing liquid by the second nozzle 5c and ends the second rinsing treatment, the control unit 11 controls the second nozzle moving unit 6b to move the second nozzle 5c from the treatment position TP to the second standby position WP2.

[0213] After the second rinsing treatment (step S306), the control unit 11 executes a drying treatment (step S307). Since the processes of steps S307 to S309 are the same as the processes of steps S7 to S9 shown in FIG. 5, descriptions thereof are omitted.

[0214] Subsequently, the first rinsing treatment (step S304) shown in FIG. 21 will be further described. FIG. 22 is a flowchart showing the flow of the first rinsing treatment. The first rinsing treatment shown in FIG. 22 includes steps S341 to S344. Among steps S341 to S344, the processes of steps S341, S343, and S344 are the same as the processes of steps S241, S242, and S243 described with reference to FIG. 18, and thus descriptions thereof are omitted.

[0215] As shown in FIG. 22, when the control unit 11 discharges the rinse liquid (second processing liquid) from the first nozzle 4a onto the substrate W, it executes a suction process (step S342). Specifically, the control unit 11 causes the first suck-back unit 7a to perform a suction operation. In the present embodiment, the control unit 11 causes the first suck-back valve 73a to perform a suction operation. By executing the suction process when discharging the rinse liquid (second processing liquid) from the first nozzle 4a onto the substrate W, the rinse liquid (second processing liquid) is sucked from the first common pipe 42 into the first suck-back unit 7a (first suck-back pipe 72a).

[0216] As described above, Embodiment 4 of the present invention has been described with reference to FIGS. 19 to 22. According to Embodiment 4, similar to Embodiments 1 to 3, when supplying the rinse liquid (second processing liquid) from the first nozzle 4a to the substrate W, it becomes difficult for the first chemical liquid (first processing liquid) staying in the first suck-back unit 7a (first suck-back pipe 72a) to flow into the first common pipe 42. As a result, when processing the substrate W with the rinse liquid (second processing liquid), it becomes difficult for the substrate W to be processed by the first chemical liquid (first processing liquid). Therefore, the substrate W can be processed with higher accuracy.

[0217] Similarly, when supplying the rinse liquid (fourth processing liquid) from the second nozzle 5c to the substrate W, it becomes difficult for the second chemical liquid (third processing liquid) staying in the second suck-back unit 7b (second suck-back pipe 72b) to flow into the second common pipe 54. As a result, when processing the substrate W with the rinse liquid (fourth processing liquid), it becomes difficult for the substrate W to be processed by the second chemical liquid (third processing liquid). Therefore, the substrate W can be processed with higher accuracy.

[0218] The embodiments of the present invention have been described above with reference to the drawings (Figs. 1 to 22). However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the gist thereof. Also, the plurality of components disclosed in the above embodiments can be modified as appropriate. For example, a certain component among all the components shown in a certain embodiment may be added to the components of another embodiment, or some of the components among all the components shown in a certain embodiment may be deleted from the embodiment.

[0219] The drawings schematically show each component mainly for facilitating the understanding of the invention, and the thickness, length, number, interval, etc. of each illustrated component may be different from the actual ones for convenience in drawing preparation. Also, it goes without saying that the configuration of each component shown in the above embodiments is an example and is not particularly limited, and various changes can be made without substantially departing from the effects of the present invention.

[0220] For example, in the embodiment described with reference to Figs. 1 to 22, the substrate holding unit 2 was a clamping chuck that brought a plurality of chuck members 21 into contact with the peripheral end surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the substrate holding unit 2 may be a vacuum chuck or a Bernoulli chuck.

[0221] Also, in the embodiment described with reference to Figs. 1 to 22, the substrate processing apparatus 100 was an etching apparatus or a cleaning apparatus, but the substrate processing apparatus 100 is not particularly limited as long as it is an apparatus for processing a substrate. For example, the substrate processing apparatus 100 may be a coating apparatus, a developing apparatus, or a film forming apparatus.

[0222] In addition, in the embodiment described with reference to FIGS. 1 to 22, the suck-back unit 7 has a suck-back valve 73 and a suck-back pipe 72, and the suck-back operation is performed by the closing operation of the suck-back valve 73. However, the suck-back unit 7 may have a configuration that performs the suck-back operation based on the principle of a siphon. In this case, the suck-back unit 7 has an on-off valve instead of the suck-back valve 73. When the control device 10 (control unit 11) sets the on-off valve to the open state, the processing liquid is sucked from the common pipe 42 into the suck-back pipe 72 based on the principle of a siphon. Similarly, the first suck-back unit 7a and the second suck-back unit 7b may also have a configuration that performs the suck-back operation based on the principle of a siphon.

[0223] Alternatively, the suck-back unit 7 may have an on-off valve and a suction device instead of the suck-back valve 73. The suction device is provided in the suck-back pipe 72 on the downstream side of the on-off valve. In this case, the suction device performs the suction operation. Specifically, the suction device is controlled by the control device 10 (control unit 11) to perform the suction operation when the on-off valve is in the open state. As a result, the processing liquid is sucked from the common pipe 42 into the suck-back pipe 72. The suction device may be, for example, an ejector. Similarly, the first suck-back unit 7a and the second suck-back unit 7b may also have a configuration that performs the suction operation by the suction device.

Industrial Applicability

[0224] The present invention is useful for an apparatus for processing a substrate and a method for processing a substrate.

Explanation of Reference Numerals

[0225] 2: Substrate holding unit 4a: First nozzle 4b: First nozzle 5a: Second nozzle 5b: Second nozzle 5c: Second nozzle 6: Nozzle moving unit 6a: First nozzle moving unit 6b: Second nozzle moving unit 7: Suck-back unit 7a: First sack-back part 11: Control unit 42: Common pipe, first common pipe (supply pipe) 43a: First rinse pipe, rinse pipe (supply pipe) 43b: Chemical solution pipe (supply pipe) 44a: First chemical solution on-off valve, chemical solution on-off valve (on-off valve) 44b: First chemical solution on-off valve (on-off valve) 45a: First rinse on-off valve, rinse on-off valve (on-off valve) 45b: Second chemical solution on-off valve (on-off valve) 52a: Second rinse pipe (second supply pipe) 52b: Chemical solution pipe (second supply pipe) 53a: Second rinse on-off valve, rinse on-off valve (second on-off valve) 53b: Chemical solution on-off valve, second chemical solution on-off valve (second on-off valve) 54: Second common pipe (second supply pipe) 55: Second rinse pipe (second supply pipe) 56: Second chemical solution on-off valve (second on-off valve) 57: Second rinse on-off valve (second on-off valve) 72: Sack-back pipe 72a: First sack-back pipe 73: Sack-back valve 73a: First sack-back valve 100: Substrate processing apparatus TP: Processing position (first processing position, second processing position) W: Substrate WP: Standby position WP1: First standby position WP2: Second standby position

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a substrate holding unit for horizontally holding the substrate; a nozzle for selectively discharging either the first processing liquid or the second processing liquid; a supply pipe for selectively supplying either the first processing liquid or the second processing liquid to the nozzle; an on-off valve provided in the supply pipe; a suck-back unit that performs a suck-back operation of sucking the processing liquid from the supply pipe; and a control unit that controls the on-off valve and the suck-back unit. The control unit: controls the on-off valve to discharge the first processing liquid from the nozzle and then discharge the second processing liquid; when discharging the second processing liquid from the nozzle, executes a suck-back process in which the suck-back unit performs the suck-back operation to suck the second processing liquid from the supply pipe to the suck-back unit. A substrate processing apparatus.

2. a liquid receiving unit disposed outside the substrate holding unit; a nozzle moving unit that moves the nozzle between a processing position facing the substrate held by the substrate holding unit and a standby position facing the liquid receiving unit; The control unit: controls the on-off valve to discharge the first processing liquid from the nozzle located at the processing position, then controls the nozzle moving unit to move the nozzle to the standby position; controls the on-off valve to discharge the second processing liquid from the nozzle located at the standby position, thereby executing a replacement process in which the second processing liquid flows from the supply pipe into the suck-back unit. The substrate processing apparatus according to Claim 1.

3. After executing the replacement process, the control unit: controls the nozzle moving unit to move the nozzle to the processing position; controls the on-off valve to discharge the second processing liquid from the nozzle located at the processing position; when discharging the second processing liquid from the nozzle located at the processing position, executes the suck-back process. The substrate processing apparatus according to Claim 2.

4. The nozzle is a first nozzle, the supply pipe is a first supply pipe, and the on-off valve is a first on-off valve. The substrate processing apparatus further comprises: a second nozzle that discharges a third processing liquid toward the substrate held by the substrate holding unit; a second supply pipe that supplies the third processing liquid to the second nozzle; and a second on-off valve provided in the second supply pipe. The substrate processing apparatus further comprises: The substrate processing apparatus further comprises: The substrate processing apparatus according to claim 2 or claim 3, wherein the control unit controls the second on-off valve to discharge the third processing liquid from the second nozzle during execution of the replacement process.

5. The substrate processing apparatus according to claim 4, wherein the second nozzle discharges the third processing liquid toward the substrate from a position outside the substrate holding unit.

6. The nozzle moving unit is a first nozzle moving unit, the processing position is a first processing position, the standby position is a first standby position, the substrate processing apparatus further includes a second nozzle moving unit that moves the second nozzle between a second processing position facing the substrate held by the substrate holding unit and a second standby position outside the substrate holding unit, The substrate processing apparatus according to claim 4, wherein the second nozzle discharges the third processing liquid toward the substrate from the second processing position.

7. The control unit controls the on-off valve to discharge the first processing liquid and the second processing liquid from the nozzle in this order while the nozzle is positioned at a processing position facing the substrate held by the substrate holding unit, and executes the suction process when discharging the second processing liquid from the nozzle. The substrate processing apparatus according to claim 1.

8. A substrate processing apparatus for processing a substrate, a substrate holding unit that horizontally holds the substrate, a nozzle that selectively discharges either the first processing liquid or the second processing liquid toward the substrate held by the substrate holding unit, a liquid receiving unit disposed outside the substrate holding unit, a nozzle moving unit that moves the nozzle between a processing position facing the substrate held by the substrate holding unit and a standby position facing the liquid receiving unit, a supply pipe that selectively supplies either the first processing liquid or the second processing liquid to the nozzle, an on-off valve provided in the supply pipe, a suck-back unit that performs a suction operation to suck the processing liquid from the supply pipe, and a control unit that controls the nozzle moving unit, the on-off valve, and the suck-back unit, comprising, the control unit, controls the on-off valve to discharge the first processing liquid from the nozzle positioned at the processing position, and then controls the suck-back unit to perform the suction operation to suck the first processing liquid from the supply pipe to the suck-back unit, controls the nozzle moving unit to move the nozzle from the processing position to the standby position, A substrate processing apparatus that controls the on-off valve to discharge the second processing liquid from the nozzle located at the standby position, thereby performing a replacement process of flowing the second processing liquid from the supply pipe into the suck-back portion.

9. A substrate processing method for processing a substrate, comprising: a step of discharging a first processing liquid from a nozzle toward the substrate horizontally held by a substrate holding portion; a step of stopping the discharge of the first processing liquid; a step of discharging a second processing liquid from the nozzle toward the substrate horizontally held by the substrate holding portion; a step of performing a suction process of causing a suck-back portion to perform a suction operation of sucking the second processing liquid from a supply pipe that selectively supplies either one of the first processing liquid and the second processing liquid to the nozzle while discharging the second processing liquid toward the substrate; A substrate processing method comprising the above.

10. After stopping the discharge of the first processing liquid, a step of moving the nozzle from a processing position facing the substrate held by the substrate holding portion to a standby position facing a liquid receiving portion disposed outside the substrate holding portion; A step of performing a replacement process of flowing the second processing liquid from the supply pipe into the suck-back portion by discharging the second processing liquid from the nozzle located at the standby position toward the liquid receiving portion; The substrate processing method according to claim 9, further comprising the above.

11. After performing the replacement process, further comprising a step of moving the nozzle from the standby position to the processing position, The step of performing the suction process includes a step of performing the suction process while discharging the second processing liquid from the nozzle toward the substrate after moving from the standby position to the processing position. The substrate processing method according to claim 10.

12. The nozzle is a first nozzle, The substrate processing method further includes a step of discharging a third processing liquid from a second nozzle toward the substrate held by the substrate holding portion during the execution of the replacement process. The substrate processing method according to claim 10 or claim 11.

13. The second nozzle discharges the third processing liquid toward the substrate from a position outside the substrate holding portion. The substrate processing method according to claim 12.

14. The processing position is a first processing position, The substrate processing method further includes a step of moving the second nozzle to a second processing position facing the substrate held by the substrate holding portion. The second nozzle discharges the third processing liquid from the second processing position toward the substrate. The substrate processing method according to claim 12.

15. The step of discharging the first processing liquid from the nozzle toward the substrate includes a step of discharging the first processing liquid from the nozzle when the nozzle is positioned at a processing position facing the substrate held by the substrate holding portion. The step of performing the suction process includes a step of performing the suction process when discharging the second processing liquid from the nozzle while maintaining the position of the nozzle at the processing position after discharging the first processing liquid. The substrate processing method according to claim 9.

16. A substrate processing method for processing a substrate, a step of discharging a first processing liquid from a nozzle positioned at a processing position facing the substrate horizontally held by a substrate holding portion toward the substrate; a step of stopping the discharge of the first processing liquid; a step of causing a suck-back unit to perform a suction operation of sucking the first processing liquid from a supply pipe that selectively supplies either the first processing liquid or the second processing liquid to the nozzle, so as to suck the first processing liquid from the supply pipe to the suck-back unit; a step of moving the nozzle from the processing position to a standby position facing a liquid receiving portion disposed outside the substrate holding portion; a step of performing a replacement process of causing the second processing liquid to flow into the suck-back unit from the supply pipe by discharging the second processing liquid from the nozzle positioned at the standby position and including a substrate processing method.

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