Nitride semiconductor device and method for manufacturing nitride semiconductor device

The nitride semiconductor device addresses Mg segregation issues by controlling acceptor element concentrations in a segregation and matrix phase, resulting in a P-type region with high effective acceptor concentration and enhanced electrical performance.

JP2025102158APending Publication Date: 2025-07-08FUJI ELECTRIC CO LTD +1
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Patent Information

Application Number
JP2023219433
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-12-26
Publication Date
2025-07-08

AI Technical Summary

Technical Problem

Existing nitride semiconductor devices face challenges in achieving a P-type region with high effective acceptor concentration and excellent electrical characteristics due to Mg segregation and diffusion issues during high-temperature heat treatment.

Method used

A nitride semiconductor device with a P-type region having a segregation portion and a matrix phase, where the acceptor element concentration in the segregation portion is 4.6 times or less than that in the matrix phase, achieved through controlled ion-implantation of acceptor elements like Mg and nitrogen, followed by heat treatment.

Benefits of technology

The solution enables a P-type region with high effective acceptor concentration and improved electrical characteristics, such as low sheet resistance and contact resistance, by managing Mg segregation effectively.

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Abstract

To provide a nitride semiconductor device capable of realizing a P-type region having a high effective acceptor concentration and excellent electrical characteristics, and a method for manufacturing the nitride semiconductor device.SOLUTION: A nitride semiconductor device includes a nitride semiconductor and a P-type region provided in the nitride semiconductor. The concentration of the acceptor element in the entire P-type region is 5×1018 cm-3 or more and 1×1021 cm-3 or less. The P-type region has a segregation portion where a part of the acceptor element is segregated, and a parent phase where the acceptor element is not segregated. The concentration of the acceptor element in the segregation portion is 4.6 times or less the concentration of the acceptor element in the parent phase.SELECTED DRAWING: Figure 3
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Citation Information

Patent Citations

  • Nitride semiconductor device manufacturing method

    JP2014086698A

  • VERTICAL GaN-BASED SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND VERTICAL GaN-BASED SEMICONDUCTOR DEVICE

    JP2019096744A