Substrate processing device, substrate processing method, manufacturing method of semiconductor device, program and substrate holding assembly

Abstract

To provide a technique for preventing a substrate from being stuck to a supporter with deposition.SOLUTION: Provided is a technique in which a substrate processing device comprises: (a) a main board including at least one first support section with respect to each of a plurality of substrates; (b) a processing container in which the main board is stored and which processes the supported substrate; (c) a plurality of second support parts provided vertically movable in relative to the main board; (d) a rotary device including a rotary shaft rotatably supporting the main board; (e) and a drive mechanism which carries the plurality of second support parts relatively upward and is capable of floating the substrate from the at least one first support part. (f) The drive mechanism includes: a direct-acting shaft capable of linearly moving in an axial direction of the rotary shaft; a transmission member capable of transmitting the linear movement of the direct-acting shaft to the plurality of second support parts; and an actuator which pushes up a bottom face of the direct-acting shaft in the axial direction. When the bottom face is not pushed up, the actuator and the bottom face of the direct-acting shaft are separated.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present disclosure is a technology effective when applied to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, a program, and a substrate holding assembly.

Background Art

[0002] As a substrate processing apparatus as a semiconductor manufacturing apparatus for processing a semiconductor substrate (also referred to as a substrate or a wafer), there is one in which a boat, which is a substrate support for storing a large number of semiconductor substrates, is disposed inside a vertical processing furnace to perform a film forming process (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] When forming a thick film on a substrate, adhesion between the substrate support and the substrate may occur due to a film formed near the contact portion between the substrate and the substrate support, and when such a substrate is taken out from the substrate support, there is a risk of generating particles.

[0005] The present disclosure provides a technology capable of preventing adhesion of a substrate to a support during film formation. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problems

[0006] The outline of typical ones among the present disclosures is briefly described as follows.

[0007] According to one aspect of the present disclosure, there is provided a technology including: (a) a main port having at least one first support portion for each of a plurality of substrates; (b) a processing container that houses the main port and processes the supported substrates; (c) a plurality of second support portions provided so as to be movable in the vertical direction relative to the main port; (d) a rotating device having a rotating shaft that rotatably supports the main port; and (e) a drive mechanism capable of relatively lifting the plurality of second support portions to float the substrate from at least one of the first support portions, wherein (f) the drive mechanism includes a linear motion shaft linearly movable in the axial direction of the rotating shaft, a transmission member capable of transmitting the linear motion of the linear motion shaft to the plurality of second support portions, and an actuator that pushes up the lower surface of the linear motion shaft in the axial direction, and when not pushed up, there is a gap between the actuator and the lower surface of the linear motion shaft.

Advantages of the Invention

[0008] According to the present disclosure, it is possible to provide a technology capable of preventing the substrate from sticking to the support during film formation.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, one aspect of the present disclosure will be described with reference to the drawings. Note that the drawings used in the following description are all schematic, and the dimensional relationships and ratios of the respective elements shown in the drawings do not necessarily match the actual ones. Also, the dimensional relationships and ratios of the respective elements do not necessarily match between the plurality of drawings.

[0011] (1) Configuration of Substrate Processing Apparatus As shown in FIG. 1, the processing furnace 202 has a heater 207 as a temperature adjustment unit (heating unit). The heater 207 has a cylindrical shape and is vertically installed by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) for activating (exciting) a gas with heat.

[0012] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end open. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), and is formed in a cylindrical shape with the upper and lower ends open. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a as a seal member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is installed vertically in the same manner as the heater 207. Mainly, the reaction tube 203 and the manifold 209 constitute a processing container (reaction container). A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate. Processing of the wafer 200 is performed in this processing chamber 201.

[0013] In the processing chamber 201, nozzles 249a to 249c as the first to third supply parts are respectively provided so as to penetrate the side wall of the manifold 209. The nozzles 249a to 249c are also respectively referred to as the first to third nozzles. The nozzles 249a to 249c are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a to 232c are respectively connected to the nozzles 249a to 249c. The nozzles 249a to 249c are different nozzles, and each of the nozzles 249a and 249c is provided adjacent to the nozzle 249b.

[0014] In the gas supply pipes 232a to 232c, in order from the upstream side of the gas flow, mass flow controllers (flow rate control units) MFCs 241a to 241c which are flow rate controllers and valves 243a to 243c which are on-off valves are respectively provided. Downstream of the valve 243a of the gas supply pipe 232a, gas supply pipes 232d and 232f are respectively connected. Downstream of the valve 243b of the gas supply pipe 232b, gas supply pipes 232e and 232g are respectively connected. Downstream of the valve 243c of the gas supply pipe 232c, a gas supply pipe 232h is connected. In the gas supply pipes 232d to 232h, in order from the upstream side of the gas flow, MFCs 241d to 241h and valves 243d to 243h are respectively provided. The gas supply pipes 232a to 232h are made of a metal material such as SUS, for example.

[0015] As shown in FIG. 2, the nozzles 249a to 249c are provided in an annular space in a plan view between the inner wall of the reaction tube 203 and the wafer 200, along the upper part from the lower part of the inner wall of the reaction tube 203, so as to rise upward in the arrangement direction of the wafers 200. That is, the nozzles 249a to 249c are respectively provided in a region on the side of the wafer arrangement region where the wafers 200 are arranged, surrounding the wafer arrangement region horizontally, along the wafer arrangement region. In a plan view, the nozzle 249b is arranged so as to face the exhaust port 231a, which will be described later, in a straight line across the center of the wafer 200 carried into the processing chamber 201. The nozzles 249a and 249c are arranged so as to sandwich the straight line L passing through the centers of the nozzle 249b and the exhaust port 231a from both sides along the inner wall of the reaction tube 203 (the outer peripheral portion of the wafer 200). The straight line L is also a straight line passing through the nozzle 249b and the center of the wafer 200. That is, it can also be said that the nozzle 249c is provided on the side opposite to the nozzle 249a with the straight line L interposed therebetween. The nozzles 249a and 249c are arranged symmetrically with the straight line L as the axis of symmetry. Gas supply holes 250a to 250c for supplying gas are respectively provided on the side surfaces of the nozzles 249a to 249c. The gas supply holes 250a to 250c are each open so as to face (opposite) the exhaust port 231a in a plan view, and it is possible to supply gas toward the wafer 200. A plurality of gas supply holes 250a to 250c are provided from the lower part to the upper part of the reaction tube 203.

[0016] On the outer peripheral portion of the wafer 200, a plurality of fixed columns 3 of the main boat 217a and a plurality of movable columns 4 of the sub-boat 217b described in FIG. 3 are depicted.

[0017] From the gas supply pipe 232a, an etching gas is supplied into the processing chamber 201 through the MFC241a, the valve 243a, and the nozzle 249a. As the etching gas, for example, a fluorine (F)-containing gas can be used.

[0018] From the gas supply pipe 232b, a reducing gas is supplied into the processing chamber 201 through the MFC 241b, the valve 243b, and the nozzle 249b. As the reducing gas, for example, a hydrogen (H)-containing gas can be used.

[0019] From the gas supply pipe 232c, a second processing gas as a raw material gas is supplied into the processing chamber 201 through the MFC 241c, the valve 243c, and the nozzle 249c. As the second processing gas, for example, a gas containing a Group 14 element such as germanium (Ge) can be used.

[0020] From the gas supply pipe 232d, a first processing gas as a raw material gas is supplied into the processing chamber 201 through the MFC 241d, the valve 243d, the gas supply pipe 232a, and the nozzle 249a. As the first raw material gas, for example, a gas containing a Group 14 element such as silicon (Si) can be used.

[0021] From the gas supply pipe 232e, a second processing gas as a dopant gas is supplied into the processing chamber 201 through the MFC 241e, the valve 243e, the gas supply pipe 232b, and the nozzle 249b.

[0022] From the gas supply pipes 232f to 232h, an inert gas is supplied into the processing chamber 201 through the MFCs 241f to 241h, the valves 243f to 243h, the gas supply pipes 232a to 232c, and the nozzles 249a to 249c. The inert gas acts as a purge gas, a carrier gas, a dilution gas, or the like.

[0023] Primarily, the etching gas supply system is constituted by the gas supply pipe 232a, MFC 241a, and valve 243a. Primarily, the reducing gas supply system is constituted by the gas supply pipe 232b, MFC 241b, and valve 243b. Primarily, the second processing gas supply system (Ge-containing gas supply system) is constituted by the gas supply pipe 232c, MFC 241c, and valve 243c. Primarily, the first processing gas supply system (Si-containing gas supply system) is constituted by the gas supply pipe 232d, MFC 241d, and valve 243d. Primarily, the second processing gas supply system (dopant gas supply system) is constituted by the gas supply pipe 232e, MFC 241e, and valve 243e. Primarily, the inert gas supply system is constituted by the gas supply pipes 232f to 232h, MFCs 241f to 241h, and valves 243f to 243h.

[0024] Below the lower sidewall of the reaction tube 203, an exhaust port 231a for exhausting the atmosphere in the processing chamber 201 is provided. As shown in FIG. 2, the exhaust port 231a is provided at a position facing (opposite to) the nozzles 249a to 249c (gas supply holes 250a to 250c) with the wafer 200 interposed therebetween in a plan view. The exhaust port 231a may be provided along the upper part from the lower part of the sidewall of the reaction tube 203, that is, along the wafer arrangement region. An exhaust pipe 231 is connected to the exhaust port 231a. To the exhaust pipe 231, a vacuum pump 246 as a vacuum exhaust device is connected via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure regulation unit). The APC valve 244 can perform vacuum exhaust and stop of vacuum exhaust in the processing chamber 201 by opening and closing the valve in a state where the vacuum pump 246 is operated, and further, in a state where the vacuum pump 246 is operated, the valve opening degree is adjusted based on the pressure information detected by the pressure sensor 245, so that the pressure in the processing chamber 201 can be adjusted. Primarily, the exhaust system is constituted by the exhaust pipe 231, APC valve 244, and pressure sensor 245. The vacuum pump 246 may be included in the exhaust system.

[0025] Below the manifold 209, a seal cap 219 is provided as a lid that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is made of a metal material such as SUS, for example, and is formed in a disk shape. An O-ring 220b is provided on the upper surface of the seal cap 219 as a seal member that abuts against the lower end of the manifold 209. Below the seal cap 219, a rotation mechanism 267 is installed as a rotation device that rotates the boats 217 (main boat 217a and sub-boat 217b) described later. The rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The rotation mechanism 267 and the seal cap 219 are configured to be lifted and lowered in the vertical direction by a boat elevator 115 as an elevator arm of an elevating mechanism installed outside the reaction tube 203. That is, the boat elevator 115 as an elevator arm can drive the rotation mechanism 267 and the lid (seal cap 219) up and down. The boat elevator 115 is configured as a transfer device (transfer mechanism) that transfers (carries in and out) the wafer 200 into and out of the processing chamber 201 by lifting and lowering the seal cap 219.

[0026] In addition, a drive device 268 is provided as a drive mechanism below the seal cap 219. The drive device 268 is used to lift the plurality of wafers 200 in the boat 217 all at once during the film formation process in the processing chamber 201.

[0027] Below the manifold 209, a shutter 219s is provided as a furnace port lid that can airtight seal the lower end opening of the manifold 209 with the seal cap 219 lowered and the boat 217 carried out from the processing chamber 201. The shutter 219s is made of a metal material such as SUS, for example, and is formed in a disk shape. An O-ring 220c is provided as a seal member that contacts the lower end of the manifold 209 on the upper surface of the shutter 219s. The opening and closing operation (lifting and lowering operation, rotation operation, etc.) of the shutter 219s is controlled by a shutter opening and closing mechanism 115s.

[0028] The boat 217 as a substrate support includes a main boat 217a shown in FIG. 3 and a sub-boat 217b shown in FIG. 4, and the main boat 217a and the sub-boat 217b are combined. Note that the main boat 217a can simply be referred to as the boat 217a.

[0029] The main boat 217a has a plurality of first support portions 21 configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in a horizontal posture and vertically aligned in a multi-stage manner with their centers aligned with each other, that is, arranged at intervals. That is, the main boat 217a has at least one first support portion 21 for each of the plurality of substrates (wafers), that is, for one substrate (wafer). The main boat 217a is made of a heat-resistant material such as quartz or SiC, for example. As shown in FIG. 1, a heat insulating plate 218 made of a heat-resistant material such as quartz or SiC is supported in multiple stages below the main boat 217a.

[0030] As shown in FIG. 3, the main boat 217a includes a plurality of fixed columns 3 (here, three fixed columns) extending in a direction substantially perpendicular to the wafer 200 and each provided with a first support portion 21, and a first coupling portion 31 for fixing the plurality of fixed columns 3 to each other. The first coupling portion 31 includes a first bottom plate 31a for fixing the vicinity of the lower ends of the plurality of fixed columns 3 to each other and a first upper plate 31b for fixing the vicinity of the upper ends of the plurality of fixed columns 3 to each other. A plurality of first support portions 21 are provided on each of the plurality of fixed columns 3. The main boat 217a is housed inside the processing container (processing chamber 201), and the substrate 200 placed on the main boat 217a is processed inside the processing container (processing chamber 201).

[0031] The sub-boat 217b has a plurality of second support portions 422 configured to support a plurality of wafers 200, for example, 25 to 200 wafers, in a horizontal posture and aligned vertically in a state where their centers are aligned with each other, that is, arranged at intervals in multiple stages. The plurality of second support portions 422 are provided so as to be movable relative to the main boat 217a in the vertical direction. The sub-boat 217b is made of a heat-resistant material such as quartz or SiC, for example.

[0032] As shown in FIG. 4, the sub-boat 217b includes a plurality of movable columns 4 (here, four movable columns) extending in a direction substantially perpendicular to the wafer 200 and each provided with a second support portion 422, and a second coupling portion 41 for fixing the plurality of movable columns 4 to each other. The second coupling portion 41 includes a second bottom plate 41a for fixing the vicinity of the lower ends of the plurality of movable columns 4 to each other, a second upper plate 41b for fixing the vicinity of the upper ends of the plurality of movable columns 4 to each other, and an intermediate plate 41c for fixing the vicinity of the middle portions (portions between the upper end and the lower end) of the plurality of movable columns 4 to each other. A plurality of second support portions 422 are provided on each of the plurality of movable columns 4. The second upper plate 41b and the second bottom plate 41a of the sub-boat 217b are configured to be able to be fitted between the first upper plate 31b and the first bottom plate 31a of the main boat 217a. The plurality of movable columns 4 are arranged to be rotatable together with the main boat 217a on the outer periphery of the substrate 200 supported by the main boat 217a as shown in FIG. 2 in a state where they can be separated from and contacted with the driving device 268.

[0033] The second bottom plate 41a is a plate having a shape that can be stably placed on the first bottom plate 31a. Notches 42 through which one of the plurality of fixed support columns 3 is inserted are provided on each side of the second bottom plate 41a, the second upper plate 41b, and the intermediate plate 41c. That is, the sub-boat 217b has a plurality of movable support columns 4 each provided with a second support portion 422, and a second coupling portion 41 that fixes the plurality of movable support columns 4 to each other. The sub-boat 217b is provided so as to be movable in the vertical direction within a range where the upper and lower ends are restricted with respect to the main boat 217a.

[0034] Here, when the number of the plurality of movable support columns 4 is N (N is an integer of 3 or more), the number of the plurality of fixed support columns 3 is N - 1 or N + 1. At this time, the second bottom plate 41a is composed of a plate having at least N vertices, and the plurality of movable support columns 4 are configured to be respectively connected corresponding to the N vertices. Further, the first support portion 21 of the fixed support column 3 is arranged closer to the center of the substrate 200 than the second support portion 422.

[0035] The driving device 268 is configured to be able to lift the second support portion 422 relatively upward to float the substrate 200 from at least one of the first support portions 21. Specifically, in a configuration in which the main boat 217a and the sub-boat 217b are combined, the sub-boat 217b is configured to be movable in the vertical direction within a range where the upper and lower ends are restricted with respect to the main boat 217a. Then, during the film formation process, the driving device 268 moves the sub-boat 217b upward within a range where the upper and lower ends are restricted with respect to the main boat 217a to lift the plurality of wafers 200 all at once.

[0036] When forming a thick film on a substrate, depending on the film thickness, the film may also be formed on the substrate support (boat) itself, resulting in adhesion between the substrate support and the substrate, and the generation of particles due to this. To reduce such particle generation, when a certain film thickness is formed, the substrate support is once removed from the processing furnace, the substrates are lifted one by one by a transfer machine in the transfer chamber and returned to their original positions, and then the substrate support is reloaded into the interior of the processing furnace to form a thick film on the substrate. However, in this method, the film formation time may increase, the film quality may deteriorate due to oxidation, and the thermal history may become non-uniform. On the other hand, as in this embodiment, by lifting the substrate 200 in the processing container 201, it is possible to shorten the film formation time and improve the film quality. Also, since the operation of lifting a plurality of wafers 200 simultaneously is carried out under reduced pressure in the processing furnace 202 (processing container 201), the throughput is dramatically improved. Also, since the substrate support is not moved to the transfer chamber, oxidation in the transfer chamber is suppressed, and the thermal history of the wafer 200 associated with tweezers pickup is reduced. Thereby, the quality of the film is improved. Note that the transfer chamber is in an atmosphere of air or nitrogen (N2) with oxygen (O2) of 20 ppm or less. Also, in the processing container 201, since the back surface of the substrate 200 is exposed, film formation is performed on both the front surface and the back surface (opposite to the front surface) of the substrate 200, so warping of the substrate 200 can be prevented.

[0037] In the reaction tube 203, a temperature sensor 263 as a temperature detector is installed. By adjusting the energization condition of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature in the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0038] In FIG. 5, a horizontal cross-sectional view of the main boat 217a is drawn on the lower side, and a horizontal cross-sectional view of the sub-boat 217b is drawn on the upper side. Here, they are drawn side by side vertically so that the center in the left-right direction of the main boat 217a coincides with the center in the left-right direction of the sub-boat 217b. In the sub-boat 217b, the centroid CT1 of the second coupling part 41 (41a, 41b, 41c) itself is offset toward the substrate removal direction side 500 from the rotation center axis 501. Also, in the sub-boat 217b, the centroid CT2 of the four movable struts 4 is offset toward the side opposite to the substrate removal direction 500. The overall centroid CT3 of the sub-boat 217b is approximately on the rotation center axis 501.

[0039] Using FIG. 6, the configuration of the drive device 268 and the sub-boat mounting base will be described.

[0040] FIG. 6 depicts a cross-sectional perspective view of the elevator arm 115a of the boat elevator 115, the boat table 501 on which the first bottom plate 31a is placed, the sub-boat mounting base 541a on which the second bottom plate 41a is placed, and the drive device 268 provided below the sub-boat mounting base 541a. In this specification, the substrate holding assembly is configured to include the boats 217 (217a, 217b), the rotating device 267, and the drive device 268.

[0041] The elevator arm 115a is provided with a rotating mechanism 267 having a rotating shaft 255 that rotatably supports the main boat 217a. A rotating shaft coupler 530 is connected to the rotating shaft 225, and the rotating shaft coupler 530 passes through the seal cap 219 and is connected to the back surface of the boat table 501. The rotating shaft coupler 530 provided on the rotating shaft 225 rotatably supports the boat table 501. The disk-shaped boat table 501 has the rotating shaft coupler 530 fixed thereto, and supports the main boat 217a and the sub-boat 217b thereon. The boat table 501 is made of a metal material such as SUS, for example, and is formed in a disk shape. On the boat table 501, a sub-boat mounting base 541a on which a disk-shaped second bottom plate 41a is fixed and a ring-shaped first bottom plate 31a are placed around the mounting base 541a.

[0042] The drive device 268 includes an actuator 100, a linear motion shaft 531, a linear ball guide 533, and a transmission member 535. The linear motion shaft 531 is provided so as to be linearly movable in the axial direction (corresponding to the rotation center axis 501 in FIG. 4) of the rotation center of the rotation shaft 225, and is configured such that its linear motion is controlled by the control of the actuator 100. Further, the center of gravity CT3 of the sub-port 217b is set directly above the linear motion shaft 531.

[0043] The rotation shaft 225 has a cavity penetrating in the axial direction, and the linear motion shaft 531 is disposed within the cavity of the rotation shaft 225. The linear ball guide 533 is a guide that supports the linear motion shaft 531 so as to be movable only in the axial direction with respect to the rotation shaft 225. The transmission member 535 is configured to be able to transmit the linear motion of the linear motion shaft 531 to a plurality of second support portions 422 of the sub-port 217b. The transmission member 535 is preferably configured to be fixed to, for example, the second bottom plate 41a and the linear motion shaft 531 by screwing.

[0044] The drive device 268 further has a bellows 536. The bellows 536 connects the linear motion shaft 531 and the rotation shaft 225 and is configured to isolate the cavity within the rotation shaft 531 and the linear ball guide 533 from the processing container. 269 indicates a coupling key for synchronously rotating the linear motion shaft 531 and the rotation shaft 225.

[0045] The rod 50 of the actuator 100 (see FIG. 7 described later) is configured to push up the lower surface of the linear motion shaft 531 in the axial direction, and when the rod 50 of the actuator 100 does not push up the lower surface of the linear motion shaft 531, there is a gap between the rod 50 of the actuator 100 and the lower surface of the linear motion shaft 531. When the rod 50 of the actuator 100 does not push up the lower surface of the linear motion shaft 531, the second bottom plate 41a of the second coupling portion 41 will be placed on the first bottom plate 31a of the first coupling portion 31.

[0046] Next, a configuration example of the actuator 100 will be described with reference to FIG. 7.

[0047] As shown in FIG. 7, the actuator 100 has a diaphragm type cylinder 10, and includes a diaphragm 20, an upper housing 30, a lower housing 32, a guide 35, a coil spring 40, a piston 45, and a rod 50 (an example of a shaft body). The diaphragm type cylinder 10 has a function of deforming the diaphragm 20 by an operating fluid such as air and reciprocating the rod 50 within a defined range.

[0048] The diaphragm 20 is a deformable rectangular member made of rubber, has an opening at the center, and is arranged such that its surface is perpendicular to the moving direction of the rod 50 (the direction along the axis marked with the symbol CL in the figure). Further, in order to facilitate deformation in the direction perpendicular to the surface, a circular step is formed in advance.

[0049] The upper housing 30 and the lower housing 32 are metal members provided with walls around the periphery of a plate having a contour corresponding to the diaphragm 20, and are fixed in a state where the walls face each other and sandwich the outer edge portion of the diaphragm 20 from both sides to form a box-shaped housing. An opening is provided at the center of the upper housing 30, and the space between the upper housing 30 and the diaphragm 20 communicates with the outside. On the other hand, the lower housing 32 has an air supply port 33 that communicates only with the space (pressurized space) between the lower housing 32 and the diaphragm 20.

[0050] The guide 35 is a cylindrical member that extends from the center of the lower housing 32 along the axis CL toward the upper housing 30 side. The guide 35 has a bearing 36 at the portion that engages with the rod 50 and guides the movement of the rod 50 on the axis CL. The bearing 36 is, for example, a sliding bearing (bush).

[0051] The piston 45 is a disk-shaped member with a warped periphery, and is provided such that the guide 35 passes through the opening provided at its center and its lower surface contacts the diaphragm 20. The upper housing 30 receives the pressure of the operating fluid through the diaphragm 20 and transmits it to the rod 50. The opening of the piston 45 and the opening of the diaphragm 20 are airtightly connected.

[0052] The rod 50 is a cylindrical member with one end closed. Its inner peripheral surface is connected to the bearing 36, the lower end is airtightly connected to the opening of the piston 45, and the closed upper end is exposed from the opening of the upper housing 30. The internal space of the rod 50 can communicate only with the pressurized space and does not communicate with the outside. Therefore, friction powder, oil mist, etc. from the bearing 36 do not scatter into the transfer chamber.

[0053] The coil spring 40 is disposed between the upper surface of the piston 45 and the lower surface of the upper housing 30, and biases the piston 45 downward along the axis CL, that is, in the direction opposite to the direction in which the cylinder is pushed by the pressure of the working fluid. With such a configuration, the diaphragm type cylinder 10 functions as a single-acting cylinder that pushes out the rod 50 by the pressure of the working fluid from the air supply port 33 and retracts the rod 50 by the force of the coil spring 40 when there is no supply. By driving the diaphragm type cylinder 10 in a single-acting manner, it is expected that the risk of leakage of the working fluid is reduced compared to other types of cylinders.

[0054] <Operation of Diaphragm Type Cylinder> A configuration for supplying the working fluid to the air supply port 33 of the diaphragm type cylinder 10 and its operation will be described. The solenoid valve 51 is a 3-way universal solenoid valve and has a pressure (P) port, an exhaust (E) port, and an A port. The A port is in fluid communication with the E port in both directions when de-energized, and is in fluid communication with the P port in both directions when energized. The A port is connected to the air supply port 33 of the diaphragm type cylinder 10, the P port is connected to a compressed air supply source such as a compressor, and the E port is connected to an exhaust duct, respectively.

[0055] The speed controller 52 is a type of throttle valve whose opening can be adjusted, and is provided between the P port and the compressed air supply source to limit the flow rate of the working fluid injected into the diaphragm type cylinder 10. Thereby, the speed at which the rod 50 is pushed out can be adjusted.

[0056] The speed controller 53 is a valve similar to the speed controller 52, which is provided between the E port and the exhaust duct and restricts the flow rate of the working fluid discharged from the diaphragm cylinder 10. Thereby, the speed at which the rod 50 retracts can be adjusted. If it is not necessary to adjust independently of the pushing-out speed, a single speed controller 52 may be provided simply between the A port and the air supply port 33.

[0057] It is preferable that the pushing-up speed or the pushing-down speed of the rod 50 is, for example, a maximum speed of 10 mm / s or less, and the diaphragm type cylinder 10 or the rod 50 moves upward or downward.

[0058] As shown in FIG. 8, the controller 121, which is a control unit (controller, control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as, for example, a touch panel is connected to the controller 121. In addition, an external storage device 123 can be connected to the controller 121.

[0059] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), etc. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures and conditions for substrate processing described later, etc. are stored in a readable manner. The process recipe is a combination of each procedure in the substrate processing described later so that the controller 121 can cause the substrate processing apparatus to execute and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, the control program, etc. are collectively referred to simply as a program. Also, the process recipe is simply referred to as a recipe. When the term "program" is used in this specification, it may include only the recipe alone, only the control program alone, or both of them. The RAM 121b is configured as a memory area (work area) that temporarily holds programs, data, etc. read by the CPU 121a.

[0060] The I / O port 121d is connected to the above-described MFCs 241a to 241h, valves 243a to 243h, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, solenoid valve (51) 116, etc.

[0061] The CPU 121a is configured to read a control program from the storage device 121c and execute it, and to be able to read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like. The CPU 121a controls the flow rate adjustment operations of various substances (various gases) by the MFCs 241a to 241h, the opening and closing operations of the valves 243a to 243h, the opening and closing operation of the APC valve 244, and the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operations of the boat 217 by the rotation mechanism 267, the vertical movement of the sub-boat 217b by the drive device 268, the lifting and lowering operations of the boat 217 by the boat elevator 115, the opening and closing operation of the shutter 219s by the shutter opening and closing mechanism 115s, the opening and closing operation of the solenoid valve (51) 116, etc., so as to conform to the content of the read recipe.

[0062] The controller 121 can be configured by installing the above-described program stored in the external storage device 123 into a computer. The external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory or an SSD, and the like. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term "recording medium" is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both of them. Note that the program may be provided to the computer without using the external storage device 123, but by using communication means such as the Internet or a dedicated line.

[0063] The controller 121 places the plurality of substrates 200 on the main port 217a having at least one first support portion 21 for each of the plurality of substrates 200, and accommodates them in the processing container 201 in step a (or procedure a). While rotating the ports (217a, 217b), gas is supplied from the gas supply devices (232d, 241d, 243d, 232a, nozzle 249a), and the rotation mechanism 267 having a rotating shaft 225 that supports the ports (217a, 217b) rotates the ports (217a, 217b) to process the plurality of substrates in the processing container 201 in step b (or procedure b). With the substrates 200 maintained in the processing container 201, a plurality of second support portions 422 provided so as to be movable in the vertical direction relative to the ports (217a, 217b) are lifted upward by the driving device 268 so as to sequentially or simultaneously separate the substrates 200 from the first support portion 21, and at least one of the plurality of substrates 200 is floated from at least one first support portion 21 in step c (or procedure c). This is performed a predetermined number of times to control the formation of a film having a film thickness equal to or greater than a predetermined value on the substrates 200. In step c, a driving device 268 having a linear motion shaft 531 that can linearly move in the axial direction of the rotating shaft 225, a transmission member 535 that can transmit the linear motion of the linear motion shaft 531 to the plurality of second support portions 422, and an actuator 100 that pushes up the lower surface of the linear motion shaft 531 in the axial direction is used. In step b, there is a gap between the actuator 100 and the lower surface of the linear motion shaft 531. Note that the controller 121 controls the rotation mechanism 267 to stop the rotation of the ports (217a, 217b) during step c.

[0064] (2) Substrate Processing Step Using the above-described substrate processing apparatus, an example of a processing sequence for growing a film on the surface of a wafer 200 as a substrate, which is a step in a method for manufacturing a semiconductor device, will be described with reference to FIG. 9. In the following description, the operations of the respective components constituting the substrate processing apparatus are controlled by the controller 121.

[0065] As used herein, the term "wafer" may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on its surface. As used herein, the term "surface of the wafer" may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer. When it is described herein that "a predetermined layer is formed on the wafer", it may mean that the predetermined layer is directly formed on the surface of the wafer itself, or that the predetermined layer is formed on a layer or the like formed on the wafer. When the term "substrate" is used herein, it has the same meaning as when the term "wafer" is used. Note that the notation of a numerical range such as "1 to 2000 Pa" in this specification means that the lower limit value and the upper limit value are included in the range. Thus, for example, "1 to 2000 Pa" means "1 Pa or more and 2000 Pa or less". The same applies to other numerical ranges. Also, when 0 slm is included in the supply flow rate, 0 slm means a case where the substance (gas) is not supplied. This is the same in the following description. The processing temperature in this specification means the temperature of the wafer 200 or the temperature in the processing chamber 201, and the processing pressure means the pressure in the processing chamber 201. Also, the processing time means the time during which the processing is continued. These are the same in the following description.

[0066] (Wafer Charge and Boat Load) When a plurality of wafers 200 are loaded (wafer charge) onto the boat 217, the shutter 219s is moved by the shutter opening / closing mechanism 115s, and the lower end opening of the manifold 209 is opened (shutter open). Thereafter, as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat load). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b. In this way, the wafer 200 is carried into the processing chamber 201.

[0067] (Pressure Adjustment and Temperature Adjustment) After the boat load is completed, the inside of the processing chamber 201, that is, the space where the wafer 200 is located, is evacuated (depressurized and evacuated) by the vacuum pump 246 so as to reach a desired pressure (degree of vacuum). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. Also, the wafer 200 inside the processing chamber 201 is heated by the heater 207 so as to reach a desired processing temperature (first temperature). At this time, the energization condition of the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution. Also, the rotation of the wafer 200 by the rotation mechanism 267 is started. The evacuation inside the processing chamber 201, the heating of the wafer 200, and the rotation are all continuously performed at least until the processing of the wafer 200 is completed.

[0068] [Film Formation Process (A1, A2)] (Step A1: Reaction Gas Supply Process) In step A1, with the wafer 200 heated to a predetermined temperature, at least one of the first processing gas and the second processing gas is supplied to the wafer 200, and a film formation process for growing a film on the surface of the wafer 200 is performed.

[0069] When depositing a SiGe film, the second processing gas is flowed into the gas supply pipe 232c. The second processing gas is flow rate-adjusted by the MFC241c and supplied into the processing chamber 201 through the gas supply pipe 232c and the nozzle 249c. In this state, the valve 243d is opened, and the first processing gas is flowed into the gas supply pipe 232d. The first processing gas is flow rate-adjusted by the MFC241d and supplied into the processing chamber 201 through the gas supply pipe 232a and the nozzle 249a, and is exhausted from the exhaust port 231a together with the second processing gas. At this time, the first processing gas and the second processing gas are supplied to the wafer 200 from the side of the wafer 200. At this time, the valves 243f to 243h may be opened to supply an inert gas into the processing chamber 201 through each of the nozzles 249a to 249c.

[0070] As the processing conditions in step A1, Processing temperature (predetermined temperature): 500 to 650 °C, preferably 550 to 600 °C Processing pressure: 4 to 200 Pa, preferably 1 to 120 Pa First processing gas supply flow rate: 0.1 to 5 slm, preferably 0.2 to 3 slm Second processing gas supply flow rate: 0.1 to 5 slm, preferably 0.2 to 310 slm Inert gas supply flow rate (per gas supply pipe): 0 to 20 slm, preferably 0.1 to 10 slm Gas supply time: 20 minutes to 60 hours, preferably 30 to 360 minutes are exemplified.

[0071] By supplying the first processing gas and the second processing gas to the wafer 200 under the above processing conditions, an epitaxial film, for example, an epitaxial SiGe film as a film containing a predetermined element, can be formed on the surface of the wafer 200. Note that a Si film can be formed by supplying only the first processing gas as the source gas.

[0072] After step A1 is completed, the valves 243a and 243c are closed, and the supply of the first processing gas and the first processing gas into the processing chamber 201 is stopped.

[0073] (Step A2: Substrate pickup process) After step A1, the sub-boat 217b is relatively moved upward by the driving device 268 to lift a plurality of wafers 200 at once from the main boat 217a. After a certain period of time has elapsed, the sub-boat 217b is relatively moved downward by the driving device 268 to dispose a plurality of wafers 200 at once on the main boat 217a. During step A2, the rotation of the boats (217a, 217b) is stopped.

[0074] [Performed a predetermined number of times] The cycles of alternately performing the above step A1 and step A2 are performed a predetermined number of times (n times, n is an integer of 1 or more).

[0075] (Purge process) After the film formation process is completed, an inert gas as a purge gas is supplied into the processing chamber 201 from each of the nozzles 249a to 249c, and exhausted from the exhaust port 231a. As a result, the inside of the processing chamber 201 is purged, and gases, by-products, etc. remaining in the processing chamber 201 are removed from the processing chamber 201 (after purge). Then, the atmosphere inside the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is restored to normal pressure (atmospheric pressure restoration).

[0076] (Boat unloading and wafer discharge) Thereafter, the seal cap 219 is lowered by the boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafer 200 is carried out (boat unloading) from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the boat 217. After the boat unloading, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). After the processed wafer 200 is carried out to the outside of the reaction tube 203, it is taken out from the boat 217 (wafer discharge).

[0077] (Modification example) Hereinafter, a modification example of the method for fixing to the sub-boat mounting table 541a will be described. The sub-boat 217b may be not only placed on the sub-boat mounting table 541a but also fixed to the sub-boat mounting table 541a using screws or the like. Note that even if the sub-boat 217b is not fixed, the second bottom plate 41a of the sub-boat 217b is configured to catch on the head of the quartz screw that fixes the main boat 217a to the main boat table 501. Therefore, for example, even if an earthquake occurs, the sub-boat 217b will not fall off from the main boat 217a. Also in this modification example, the same effects as those of the above-described embodiment can be obtained.

[0078] According to the present disclosure, one or more of the following effects can be obtained.

[0079] 1) During film formation, the sub-boat 217b, which is a pickup boat, can be lifted in the processing chamber 201 to lift the wafer 200, separate the wafer 200 from the main boat 217a, and break the adhesion. After that, the wafer 200 can be lowered onto the main boat 217a again in the processing chamber 201 to resume film formation.

[0080] 2) During rotation by the rotation mechanism 267, since the rotation mechanism 267 is disconnected from the drive device 268, alignment between the rotation mechanism 267 and the drive device 268 is unnecessary. Also, no load or heat is transmitted to the drive device 268, no overload or vibration due to misalignment occurs, and the drive device 268 has a longer lifespan.

[0081] 3) The inclination of the sub-boat 217b and the accompanying vibration are reduced, and displacement of the substrate and the like are less likely to occur.

[0082] 4) The sub-boat 217b is lifted at a single point on the rotation center axis of the sub-boat 217b by a transmission member 535 with sufficient thickness close to the center of gravity position of the sub-boat 217b, so it can stably move up and down.

[0083] 5) By using a diaphragm type cylinder 10 as the actuator 100, smooth operation at low speed is possible. Also, there is no air leakage into the transfer chamber replaced with N2. Moreover, the heat-resistant temperature is 100°C, which is higher than that of a motor and has a longer lifespan.

[0084] As described above, the present disclosure has been specifically described based on examples. However, it goes without saying that the present disclosure is not limited to the above-described embodiments and examples, and can be variously modified. The present disclosure is applicable not only to vertical substrate processing apparatuses, but also to single-wafer substrate processing apparatuses and multi-wafer substrate processing apparatuses. That is, in the above-described aspect, an example of forming a film using a batch-type substrate processing apparatus that processes a plurality of substrates at once has been described. The present disclosure is not limited to the above-described aspect, and can be preferably applied, for example, even when forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at once. Further, in the above-described aspect, an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described. The present disclosure is not limited to the above-described aspect, and can be preferably applied even when forming a film using a substrate processing apparatus having a cold-wall type processing furnace. Even when using these substrate processing apparatuses, each process can be performed under the same processing procedures and processing conditions as those in the above-described aspects and modification examples, and the same effects as those in the above-described aspects and modification examples can be obtained. The above-described aspects and modification examples can be used in appropriate combinations. The processing procedures and processing conditions at this time can be, for example, the same as the processing procedures and processing conditions in the above-described aspects and modification examples.

Description of Reference Numerals

[0085] 200: Substrate (wafer) 201: Processing chamber 217: Boat 217a: Main boat 217b: Sub-boat 267: Rotation mechanism 268: Driving device 21: First support portion 22: Second support portion 100: Actuator

Claims

1. (a)A main boat having at least one first support portion for each of a plurality of substrates; (b)A processing container that houses the main boat and processes the supported substrates; (c)A plurality of second support portions provided so as to be movable in the vertical direction relative to the main boat; (d)A rotating device having a rotating shaft that rotatably supports the main boat; (e)A drive mechanism capable of lifting the plurality of second support portions relatively upward to float the substrate from at least one of the first support portions; (f)The drive mechanism includes a linear motion shaft that can move linearly in the axial direction of the rotating shaft, a transmission member that can transmit the linear motion of the linear motion shaft to the plurality of second support portions, and an actuator that pushes up the lower surface of the linear motion shaft in the axial direction. When not pushed up, there is a gap between the actuator and the lower surface of the linear motion shaft. A substrate processing apparatus.

2. In the substrate processing apparatus according to Claim 1, The plurality of second support portions are coupled by a second coupling portion to form a sub-boat, and the center of gravity of the sub-boat is set directly above the linear motion shaft. A substrate processing apparatus.

3. In the substrate processing apparatus according to Claim 1 or 2, The rotating shaft has a cavity penetrating in the axial direction, and the linear motion shaft is disposed in the cavity of the rotating shaft. A substrate processing apparatus.

4. In the substrate processing apparatus according to Claim 3, The substrate processing apparatus further includes a guide that supports the linear motion shaft so as to be movable only in the axial direction with respect to the rotating shaft.

5. In the substrate processing apparatus according to Claim 3, The actuator is a diaphragm type cylinder, and the diaphragm type cylinder moves at a maximum speed of 10 mm / s or less when a speed controller restricts the flow rate of the working fluid. A substrate processing apparatus.

6. In the substrate processing apparatus according to Claim 2, The main boat has a plurality of fixed columns extending in a direction substantially perpendicular to the substrate and each provided with the first support portion, and a first coupling portion that fixes the plurality of fixed columns to each other; The sub-boat has a plurality of movable columns extending in a direction substantially perpendicular to the substrate and each provided with the second support portion; The first coupling portion includes a first bottom plate that fixes the vicinity of the lower ends of the plurality of fixed columns to each other; The second coupling portion includes a second bottom plate that fixes the vicinity of the lower ends of the plurality of movable columns to each other and is coupled to the transmission member. A substrate processing apparatus.

7. In the substrate processing apparatus according to Claim 6, The substrate processing apparatus has N (where N is an integer of 3 or more) movable support columns, N - 1 or N + 1 fixed support columns, the second bottom plate is a plate having at least N vertices, and the plurality of movable support columns are respectively connected corresponding to the N vertices.

8. In the substrate processing apparatus according to claim 6, When the actuator is not performing the pushing-up, the second coupling portion is placed on the first coupling portion, a substrate processing apparatus.

9. In the substrate processing apparatus according to claim 6, The transmission member is fixed to the second bottom plate and the linear motion shaft by screwing, a substrate processing apparatus.

10. In the substrate processing apparatus according to claim 2, The second coupling portion has its center of gravity biased toward the substrate take-out direction side rather than the rotation shaft, a substrate processing apparatus.

11. In the substrate processing apparatus according to claim 4, The substrate processing apparatus further includes a bellows that connects the linear motion shaft and the rotation shaft and isolates the cavity and the guide in the rotation shaft from the processing container.

12. Step a of placing a plurality of substrates on a main boat having at least one first support portion for each of the plurality of substrates and accommodating them in a processing container; Step b of processing the plurality of substrates in the processing container while a rotating device having a rotation shaft for supporting the main boat rotates the main boat; Step c of lifting a plurality of second support portions provided to be movable in the vertical direction relative to the main boat upward by a drive mechanism to float at least one of the plurality of substrates from at least one of the first support portions, and In step c, a drive mechanism having a linear motion shaft linearly movable in the axial direction of the rotation shaft, a transmission member capable of transmitting the linear motion of the linear motion shaft to the plurality of second support portions, and an actuator for pushing up the lower surface of the linear motion shaft in the axial direction is used. In step b, the actuator and the lower surface of the linear motion shaft are separated from each other, a substrate processing method.

13. Step a of placing a plurality of substrates on a main boat having at least one first support portion for each of the plurality of substrates and accommodating them in a processing container; Step b of processing the plurality of substrates in the processing container while a rotating device having a rotation shaft for supporting the main boat rotates the main boat; A step c of lifting a plurality of second support portions provided so as to be movable in the vertical direction relative to the main boat upward by a drive mechanism to lift at least one of the plurality of substrates from at least one of the first support portions. In the step c, a drive mechanism having a linear motion shaft that can move linearly in the axial direction of the rotation shaft, a transmission member that can transmit the linear motion of the linear motion shaft to the plurality of second support portions, and an actuator that pushes up the lower surface of the linear motion shaft in the axial direction is used. A method of manufacturing a semiconductor device, in which the actuator and the lower surface of the linear motion shaft are separated from each other in the step b.

14. In the method of manufacturing a semiconductor device according to claim 13. The step b and the step c are repeatedly performed a plurality of times, and the rotation of the main boat is stopped during the step c. A method of manufacturing a semiconductor device.

15. A procedure a of placing a plurality of substrates on a main boat having at least one first support portion for each of the plurality of substrates and accommodating them in a processing container. A procedure b of processing the plurality of substrates in a processing container while rotating the main boat by a rotating device having a rotation shaft for supporting the main boat. A step c of lifting a plurality of second support portions provided so as to be movable in the vertical direction relative to the main boat upward by a drive mechanism to lift at least one of the plurality of substrates from at least one of the first support portions. In the step c, a drive mechanism having a linear motion shaft that can move linearly in the axial direction of the rotation shaft, a transmission member that can transmit the linear motion of the linear motion shaft to the plurality of second support portions, and an actuator that pushes up the lower surface of the linear motion shaft in the axial direction is used. A program for causing a substrate processing apparatus to execute by a computer such that the actuator and the lower surface of the linear motion shaft are separated from each other in the step b.

16. (a) A boat having at least one first support portion for each of a plurality of substrates and capable of holding the plurality of substrates in a processing container while arranging them in the vertical direction. (b) A plurality of second support portions provided so as to be movable in the vertical direction relative to the boat. (c) A rotating device having a rotation shaft for rotatably supporting the boat. (d) A drive mechanism capable of lifting the second support portion relatively upward to lift the substrate from at least one of the first support portions. (e) The drive mechanism includes a linear motion shaft that can move linearly in the axial direction of the rotary shaft, a transmission member that can transmit the linear motion of the linear motion shaft to the plurality of second support portions, and an actuator that pushes up the lower surface of the linear motion shaft in the axial direction. When not pushed up, there is a gap between the actuator and the lower surface of the linear motion shaft. Substrate holding assembly.

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