Semiconductor device

Abstract

To improve responsiveness of touch detection by shortening a detection time of a touch sensor.SOLUTION: There is provided a display device which has a gate driver, a plurality of touch sensors, and a plurality of touch interconnections, wherein the gate driver functions to supply scan signals to the plurality of touch interconnections in the same timing, and touch sensors at different positions detect whether a plurality of touches are made in the same timing to improve responsiveness. Further, the gate driver functions to control scan signals updating a display and control scan signals that the touch sensors use for detection.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a touch sensor, a display device, a display module, and an electronic device. 。

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification etc. relates to an article, a method, or a manufacturing method. Or, the present invention relates to a process, a machine, a manufacture, or a composition of matter. In particular, one aspect of the present invention relates to a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, a touch panel, a driving method thereof, or a manufacturing method thereof. In this specification etc., a semiconductor device refers to an element, a circuit, or a device etc. that can function by utilizing semiconductor characteristics. As an example, semiconductor elements such as transistors and diodes are semiconductor devices. As another example, a circuit having semiconductor elements is a semiconductor device. As another example, a device provided with a circuit having semiconductor elements is a semiconductor device. 。 。 In particular, one aspect of the present invention relates to a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, a touch panel, a driving method thereof, or a manufacturing method thereof.

[0003] Note that in this specification etc., a semiconductor device refers to an element, a circuit, or a device etc. that can function by utilizing semiconductor characteristics. As an example, semiconductor elements such as transistors and diodes are semiconductor devices. As another example, a circuit having semiconductor elements is a semiconductor device. As another example, a device provided with a circuit having semiconductor elements is a semiconductor device. As an example, semiconductor elements such as transistors and diodes are semiconductor devices. 。 As another example, a circuit having semiconductor elements is a semiconductor device. 。

Background Art

[0004] Mobile devices such as smartphones, tablets, and e-books are becoming widespread. Electronic devices are required to be miniaturized, thinned, lightened, made flexible, or have improved operability. In addition, electronic devices are required to provide a display suitable for the brightness of the environment in which they are used, such as the outdoor environment or the indoor environment. Furthermore, in smartphones, tablets, e-books, etc., improved operability by touch input is required. 。 。 。 。

[0005] For example, in Patent Document 1, in an environment with sufficient external light such as natural light or indoor illumination light, display using reflected light is performed, and in an environment where sufficient brightness cannot be obtained, display using a light-transmitting element is performed, and a display device that realizes power reduction has been proposed.

[0006] For example, in Patent Document 2, in order to reduce the power consumption of a mobile device, it is disclosed that selective update of display in a specific area is performed in a decoder circuit.

[0007] For example, in Patent Document 3, a hybrid (composite type) display device is disclosed in which a pixel circuit for controlling a liquid crystal element and a pixel circuit for controlling a light-emitting element are provided in one pixel.

Prior Art Documents

Patent Documents

[0008]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0009] In an electronic device, in order to improve the operability by touch input, it can be dealt with by increasing the touch detection frequency. However, when the touch detection frequency is increased, there is a problem that drive signals of the display device and the like become noise, and the detection accuracy of touch decreases.

[0010] Electronic devices are required to be miniaturized, thinner, lighter, flexible, or more operable. For improving operability, a display device having a touch sensor is required, and for miniaturization, thinning, and weight reduction, reduction in the number of components is required. Further, for obtaining flexibility, it is required to reduce the thickness of the display device.

[0011] Smartphones, tablets, e-books, and personal computers are increasingly being used in places where bright external light can be obtained. Among them, mobile devices such as smartphones and tablets used in places where bright external light can be obtained are displayed at high brightness to improve visibility. Therefore, they tend to consume power. Therefore, it is necessary to increase the battery capacity so that it can withstand long-term use. However, increasing the battery capacity has the problem that the mobile device becomes heavy.

[0012] When using a smartphone, tablet, or e-book for a long time, it is necessary to reduce power consumption. Typical methods for controlling power consumption include control methods such as power gating and clock gating. In the case of a display device, methods such as reducing the display update frequency have been proposed. However, when the display update interval becomes long, charge leakage occurs in the switch transistors that hold the data. Due to the charge leakage, the data held deteriorates and flicker occurs, resulting in a problem of reduced visibility.

[0013] In view of the above problems, one aspect of the present invention aims to provide a display device that improves the operability of touch input. Or, one aspect of the present invention is a novel configuration One of the problems is to provide a display device. Alternatively, one aspect of the present invention is to provide an electronic device that reduces power consumption. One of the problems is to provide an electronic device that reduces power consumption.

[0014] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention is not required to solve all of these problems. Note that other problems will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other problems from the description in the specification, drawings, claims, etc.

[0015] Note that the problems of one aspect of the present invention are not limited to the problems listed above. The problems listed above do not prevent the existence of other problems. Note that other problems are the problems not mentioned in this item described below. Problems not mentioned in this item can be derived by those skilled in the art from the description in the specification or drawings, etc., and can be appropriately extracted from these descriptions. Note that one aspect of the present invention solves at least one of the problems listed above and / or other problems.

Means for Solving the Problems

[0016] One aspect of the present invention is a display device having a gate driver, a plurality of touch sensors, and a plurality of wirings, wherein the plurality of wirings are each connected to the plurality of touch sensors, and the gate driver has a function of applying a scanning signal to the plurality of wirings at the same timing, and a plurality of touch sensors at different positions have a function of detecting the presence or absence of a plurality of touches at the same timing. This is a display device characterized by the above.

[0017] One aspect of the present invention is a display device having a display area and a gate driver, wherein the display area includes a plurality of pixels, a plurality of touch sensors, a plurality of scanning lines, and a plurality of touch wirings, and the gate driver has a function of supplying a first scanning signal to the plurality of scanning lines, and the gate driver has a function of supplying a second scanning signal for detecting a touch to the plurality of touch wirings. This is the display device.

[0018] In each of the above configurations, it is preferable that the pixel has a first display element, and the first display element is a transmissive liquid crystal element. This is the display device.

[0019] In each of the above configurations, it is preferable that the pixel has a first display element, and the first display element is a reflective liquid crystal element. This is the display device.

[0020] In the above configuration, it is preferable that the pixel has a first display element and a second display element, the first display element has a function of reflecting visible light, and the second display element has a function of emitting visible light. This is the display device. In the above configuration, it is preferable that the second display element is a light-emitting element.

[0021] In the above configuration, it is preferable that the second display element is a light-emitting element.

[0022] In each of the above configurations, it is preferable that the display device has a transistor, and the transistor has polysilicon in the semiconductor layer. This is the display device.

[0023] In each of the above configurations, it is preferable that the display device has a transistor, and the transistor has a metal oxide in the semiconductor layer. This is the display device.

[0024] In each of the above configurations, the first light reflected by the first display element and the light emitted by the second display element Of the second light, the display device having a function of displaying an image by either one or both of them is preferable.

Advantages of the Invention

[0025] One aspect of the present invention can provide a display device that improves the operability of touch input. Or, one aspect of the present invention can provide a display device with a novel configuration having a touch sensor. Or, one aspect of the present invention can provide an electronic device that reduces power consumption. It can.

[0026] Note that the effects of one aspect of the present invention are not limited to the effects listed above. The effects listed above do not prevent the existence of other effects. Other effects are those described in the following description, in this section that are not mentioned. Effects not mentioned in this section can be derived by those skilled in the art from the description in the specification or the drawings, etc., and can be appropriately extracted from these descriptions. Note that one aspect of the present invention has at least one of the effects listed above and / or other effects. Therefore, one aspect of the present invention may, in some cases, not have the effects listed above.

Brief Description of the Drawings

[0027]

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Mode for Carrying Out the Invention

[0028] Hereinafter, embodiments will be described with reference to the drawings. However, the embodiments can be implemented in many different ways, and it is easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and scope thereof. Therefore, the present invention should not be construed as being limited to the description of the

[0029] embodiments below. Also, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. Note that the drawings schematically show

[0030] ideal examples and are not limited to the shapes or values shown in the drawings. In addition, it should be noted that the ordinal numbers "first", "second", "third", etc. used in

[0031] this specification are attached to avoid confusion of components and are not intended to be numerically limiting. Also, in this specification, terms indicating arrangements such as "above" and "below" are used for convenience in explaining the positional relationship between components with reference

[0032] to the drawings. Also, the positional relationship between components appropriately changes depending on the direction in which each component is depicted. Therefore, it is not limited to between a drain (drain terminal, drain region or drain electrode) and a source (source terminal, source region or source electrode), there is a channel region, and current can flow between the source and the drain through the channel region. In this specification and the like, the channel region refers to the region where current mainly flows.

[0033] Also, the functions of the source and the drain may be interchanged when different polarities of transistors are adopted, or when the direction of current changes during circuit operation. Therefore, in this specification and the like, the terms source and drain can be used interchangeably.

[0034] Also, in this specification and the like, "electrically connected" includes cases where connection is made through "something having some electrical action". Here, "something having some electrical action" is not particularly limited as long as it enables the exchange of electrical signals between the connection targets. For example, "something having some electrical action" includes electrodes, wiring, switching elements such as transistors, resistance elements, inductors, capacitors, and other elements having various functions.

[0035] Also, in this specification and the like, "parallel" refers to a state where two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, cases of -5° or more and 5° or less are also included. Also, "perpendicular" refers to a state where two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, cases of 85° or more and 95° or less are also included.

[0036] Also, in this specification and the like, the term "film" and the term "layer" can be used interchangeably with each other. It is possible to replace. For example, the term "conductive layer" may be changed to the term "conductive film". Or, for example, the term "insulating film" may be changed to the term "insulating layer". There may be cases where it is possible.

[0037] Also, in this specification and the like, unless otherwise specified, the off-current refers to the drain current when the transistor is in the off state (also referred to as a non-conducting state or a cutoff state). The off state refers to, unless otherwise specified, a state where the voltage V gs between the gate and the source is lower than the threshold voltage Vth for an n-channel transistor, and a state where the voltage Vgs between the gate and the source is higher than the threshold voltage Vth for a p-channel transistor. For example, the off-current of an n-channel type transistor may refer to the drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vt h. There may be cases where it refers to the drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vth.

[0038] The off-current of a transistor may depend on Vgs. Therefore, when it is said that the off-current of a transistor is I or less, it may mean that there exists a value of Vgs for which the off-current of the transistor becomes I or less. The off-current of a transistor may refer to the off-current in the off state at a predetermined Vgs, the off state at Vgs within a predetermined range, or the off-current in the off state at Vgs where a sufficiently reduced off-current can be obtained, etc. There may be cases where it refers to the off-current in the off state at a predetermined Vgs, the off state at Vgs within a predetermined range, or the off-current in the off state at Vgs where a sufficiently reduced off-current can be obtained, etc. There may be cases where it refers to the off-current in the off state at a predetermined Vgs, the off state at Vgs within a predetermined range, or the off-current in the off state at Vgs where a sufficiently reduced off-current can be obtained, etc. There may be cases where it refers to the off-current in the off state at a predetermined Vgs, the off state at Vgs within a predetermined range, or the off-current in the off state at Vgs where a sufficiently reduced off-current can be obtained, etc. There may be cases where it refers to the off-current in the off state at a predetermined Vgs, the off state at Vgs within a predetermined range, or the off-current in the off state at Vgs where a sufficiently reduced off-current can be obtained, etc.

[0039] As an example, the threshold voltage Vth is 0.5 V, the drain current at Vgs = 0.5 V is 1×10 A, the drain current at Vgs = 0.1 V is 1×10 -9 A, and the drain current at Vgs = -0.5 V is 1×10 -1 3 A.-19 is A and Vg the drain current at Vgs of -0.8V is 1×10 -22 A such that an n-channel type tra nsistor is assumed. The drain current of the transistor is at Vgs of -0.5V or in the range of Vgs from -0.5V to -0.8V is 1×10 -19 A or less so the off-current of the transistor may be said to be 1×10 -19 A or less. There exists a Vgs at which the drain current of the transistor becomes 1×10 A or less, so the off-current of the transistor may be said to be 1×10 -22 A or less. Therefore, the off-current of the transistor may be said to be 1×10 -22 A or less.

[0040] Also, in this specification, etc., the off-current of a transistor having a channel width W may be represented by the current value flowing per channel width W. Also, it may be represented by the current value flowing per a predetermined channel width (for example, 1μm). In the latter case, the unit of the off-current may be represented by a unit having a unit of current / length (for example, A / μm).

[0041] The off-current of a transistor may depend on temperature. In this specification, the off-current represents the off-current at room temperature, 60°C, 85°C, 95°C, or 125°C, unless otherwise specified. Or, it represents the off-current at the temperature at which the reliability of a semiconductor device including the transistor is guaranteed or the temperature at which a semiconductor device including the transistor is used (for example, either one of the temperatures from 5°C to 35°C). That the off-current of a transistor is I or less means at room temperature, 60°C, 85°C, 95°C, 125°C, the temperature of the transistor, or when the transistor is included in a semiconductor device, etc., the temperature at which the reliability of the semiconductor device is guaranteed There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C). There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C). ) There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C).

[0042] The off-current of the transistor may depend on the voltage Vds between the drain and the source. In this specification, unless otherwise specified, the off-current may represent the off-current at Vds of 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, or 20V. Or, it may represent the off-current at Vds at which the reliability of the semiconductor device or the like including the transistor is guaranteed, or the off-current at Vds used in the semiconductor device or the like including the transistor. When it is said that the off-current of the transistor is I or less, it may mean that there exists a value of Vgs such that the off-current of the transistor becomes I or less at Vds of 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, 20V, the Vds at which the reliability of the semiconductor device or the like including the transistor is guaranteed, or the Vds used in the semiconductor device or the like including the transistor. There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C). There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C). I or less means that there exists a value of Vgs such that the off-current of the transistor becomes I or less at Vds of 0.1V, 0.8V, 1V, 1.2V, 1.8V, 2.5V, 3V, 3.3V, 10V, 12V, 16V, 20V, the Vds at which the reliability of the semiconductor device or the like including the transistor is guaranteed, or the Vds used in the semiconductor device or the like including the transistor. V, 3V, 3.3V, 10V, 12V, 16V, 20V, the Vds at which the reliability of the semiconductor device or the like including the transistor is guaranteed, or the Vds used in the semiconductor device or the like including the transistor. There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C). There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C). There is a case where there exists a value of Vgs such that the off-current of the transistor becomes I or less at a temperature at which the reliability of a semiconductor device or the like including the transistor is guaranteed, or at a temperature at which the semiconductor device or the like including the transistor is used (for example, any one temperature between 5°C and 35°C).

[0043] In the above description of the off-current, the drain and the source may be read as interchanged. That is, the off-current may also refer to the current flowing through the source when the transistor is in the off state. In the above description of the off-current, the drain and the source may be read as interchanged. That is, the off-current may also refer to the current flowing through the source when the transistor is in the off state.

[0044] Also, in this specification or the like, in the same meaning as the off-current, it may be described as the leakage current. Also, In addition, in this specification and the like, the off-current refers to, for example, the current flowing between the source and the drain when the transistor is in the off state. In some cases, it may refer to the current flowing between the source and the drain.

[0045] Note that voltage refers to the potential difference between two points, and potential refers to the electrostatic energy (electrical potential energy) possessed by a unit charge in an electrostatic field at a certain point. That is, generally, the potential difference between the potential at a certain point and the reference potential (for example, the ground potential) is simply referred to as potential or voltage, and potential and voltage are often used as synonyms. Therefore, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential. For this reason, in this specification, unless otherwise specified, potential may be read as voltage, or voltage may be read as potential.

[0046] (Embodiment 1) In this embodiment, an in-cell type touch sensor with improved touch detection operability will be described with reference to FIGS. 1 to 9. FIG. 1(A) shows the driving timing of the display device 10 having the touch sensor. FIG.

[0047] 1(B) shows the block diagram of the display device 10. As an example, FIG. 1(A) shows a case where 60 frames are displayed per second. One frame represents the period during which all the pixel data of the display device are updated. The one-frame period means about 16.6 ms. FIG. 1(A) has a period T0 - T1 for updating the display and a period T1 - T3 for detecting a touch from the object to be detected using the touch sensor within one frame period. The period T0 - T1 for updating the display and the period T1 - T3 for detecting the touch may be of the same length.

[0048] FIG. 1(A) has a period T0 - T1 for updating the display and a period T1 - T3 for detecting a touch from the object to be detected using the touch sensor within one frame period. The period T0 - T1 for updating the display and the period T1 - T3 for detecting the touch may be of the same length. or different lengths. ​The period T1-T3 during which touch is detected may be longer than the period T0-T1 during which the display is updated. Or, the period T0-T1 during which the display is updated is longer than the period T1-T3 during which the touch is detected. FIG. 1A shows the display update period T0-T1 and the touch detection period T2-T3. We will now explain an example in which T1-T3 are controlled to be periods of equal length.

[0049] In FIG. 1A, in one frame period T0-T3, the display is This shows an example in which the touch is detected during the remaining period T1-T3. Within the period in which a touch is detected, there are two more periods T1-T2 and T2-T3 in which a touch is detected. T3 is set. By setting the number of touch detection times to two or more, the touch detection accuracy is improved. However, the period for detecting a touch may be set to only one.

[0050] The accuracy of touch detection depends on how many touch detection periods are set within one frame period. In the example of FIG. 1(A), the non-detection period is about 8 ms, and the detection period is about 4 ms. By setting up multiple touch detection periods, the accuracy of touch detection is improved. It can be raised.

[0051] The control signal given when updating the display becomes noisy, causing the touch sensor to make a false detection. Therefore, it is preferable to stop touch detection during the period when the display is updated. During the period when a touch is detected, the display is not updated. During this time, it is preferable that the circuitry for updating the display is deactivated. The selection transistor that holds the data to be read is in the off state. It is preferable that the leakage current is small. The pixels will be described in detail with reference to FIG. 3. Leakage current Transistors with a small leakage current will be described in detail in Embodiment 4.

[0052] Touch sensors can use any detection method such as the projected capacitance method, surface capacitance method, resistive film method, optical method, etc. In any method, data can be input by touching or approaching the touch sensor with the object to be detected. In this embodiment, a touch sensor using the projected capacitance method will be described as an example.

[0053] The display device 10 shown in FIG. 1(B) includes a gate driver 61 that controls the signal lines in the row direction for operating the touch sensor, a receiver circuit 62 that detects touches, and a plurality of touch sensors 63. The gate driver 61 is electrically connected to the touch sensor 63 and the pixel 64. In FIG. 1(B), an example is shown in which a plurality of pixels 64 are provided at positions overlapping the position where the touch sensors 63(1,6) are provided.

[0054] The touch sensor 63 includes a pixel, a touch wiring COM-Tx to which a scanning signal for the touch sensor is supplied, and a touch wiring COM-Rx that transmits the detection of the touch as an electrical signal, and. Although the pixels will be described in detail in FIG. 3, the pixels are electrically connected to a scanning line, a signal line, and a wiring CSCOM for updating the display. The touch sensor 63 will be described in detail with reference to FIG. 3. In FIG. 1(B), an example is shown in which the touch sensors 63 are arranged in a 6×6 pattern, but the number of touch sensors 63 can be appropriately selected as an optimum number.

[0055] ​​​​​​ In FIG. 1(B), a block diagram is used to explain the details of the driving timing shown in FIG. 1(A). In the driving timing shown in FIG. 1(A), an example is shown where the touch sensor 63(1,1) and the touch sensor 63(1,4) simultaneously detect a touch.

[0056] When the touch sensors 63(1,1) and 63(1,4) arranged at separated positions detect a touch, even if a scanning signal is given at the same timing, the signals do not interfere because the two touch sensors 63 are separated. Therefore, the touches of the two touch sensors 63 can be detected at the same timing.

[0057] Therefore, the scanning of the touch sensors provided in the display area can be performed in half the time. In other words, compared with the case of scanning one line at a time, the touch sensors can be scanned at twice the frequency. In FIGS. 1(A) and 1(B), an example is shown where a scanning signal is given to the two touch wiring lines COM-Tx for two lines simultaneously. However, when the touch detection area is wide, a scanning signal may be given to the touch wiring lines of three or more lines simultaneously.

[0058] FIG. 2 explains the gate driver 61. The gate driver 61 has a function of giving a scanning signal for updating the display to the scanning lines and a function of giving a scanning signal for the touch sensors to the touch wiring lines. In the figure, n is an integer of 1 or more.

[0059] The gate driver 61 has a decoder 61a, a plurality of selection circuits 61b, and a plurality of buffers 61g. The selection circuit 61b has a shift register 61c, a switch 61d, a switch 61e, and a switch 61f.

[0060] Terminal 2 of switch 61d is electrically connected to scanning line 65(1) via buffer 61g. Terminal 2 of switch 61e is electrically connected to scanning line 65(2) via buffer 61g. Terminal 2 of switch 61f is electrically connected to touch wiring COM-Tx via buffer 61g.

[0061] Decoder 61a is electrically connected to wiring ADD and wiring CTRL. Output signal DE is generated from signal Address applied to wiring ADD. It is preferable that a plurality of signals Address are applied to a plurality of wirings ADD. Furthermore, depending on signal Sel applied to wiring CTRL, it is possible to switch and output a scanning signal for updating display and a scanning signal for detecting touch. For example, when updating display, by giving "L" to signal Sel and giving "H" to signal Sel when controlling the touch sensor, output signal DE can be used as different scanning signals.

[0062] Selection circuit 61b can apply a plurality of scanning signals GOUT to a plurality of scanning lines via buffer 61g. The number of scanning lines electrically connected to selection circuit 61b can be appropriately set according to the number of pixels connected to one touch sensor 63.

[0063] When "L" is given to signal Sel, shift register 61c has a function of sequentially outputting signals SR(1) to SR(6).

[0064] When "L" is given to signal Sel, terminals 1 and 2 of switch 61d The connection becomes conductive, and signal SR(1) is output to wiring ND1. The signal given to wiring ND1 is applied to scanning line 65(1) as scanning signal GOUT(1) via buffer 61g.

[0065] When “L” is applied to signal Sel, the connection between terminal 1 and terminal 2 of switch 61e becomes conductive, and signal SR(2) is output to wiring ND2. The signal given to wiring ND2 is applied to scanning line 65(2) as scanning signal GOUT(2) via buffer 61g.

[0066] When “L” is applied to signal Sel, the connection between terminal 3 and terminal 2 of switch 61f becomes conductive, and the common potential given to wiring COM can be applied to switch wiring COM-Tx via buffer 61g.

[0067] When “H” is applied to signal Sel, the connection between terminal 3 and terminal 2 of switch 61d becomes conductive, and the L1 potential given to wiring GVSS is output to wiring ND1. The L1 potential given to wiring ND1 is applied to scanning line 65(1) as scanning signal GOUT(1) via buffer 61g. The L1 potential indicates the smallest potential applied to the scanning line.

[0068] When “H” is applied to signal Sel, the connection between terminal 3 and terminal 2 of switch 61e becomes conductive, and the L1 potential given to wiring GVSS is output to wiring ND2. The L1 potential given to wiring ND2 is applied to scanning line 65(2) as scanning signal GOUT(2) via buffer 61g.

[0069] ​​​​​​​​​When the signal Sel is given “H”, the terminals 1 and 2 of the switch 61f are in a conductive state, and the signal DE(1) is output to the wiring ND3. The signal given to the wiring ND3 is given as a scanning signal to the touch wiring COM-Tx via the buffer 61g.

[0070] The period during which the signal Sel is “H” is the period for detecting touch. The L1 potential is given to each scanning line, and the output of the decoder is given as a scanning signal to the touch wiring COM-Tx.

[0071] In FIG. 3, the touch sensor 63 has a plurality of pixels 64. In the example shown in FIG. 3, an example in which one touch sensor 63 has six pixels 64 is shown. When controlling using the gate driver 61 of FIG. 2, the shift register 61c

[0072] preferably has a two-stage configuration. The pixel 64 has a selection transistor 64a, a capacitive element 64b, and a liquid crystal display element 64c. The liquid crystal display element 64c has

[0073] liquid crystal whose alignment direction changes depending on the potential difference between the pixel electrode 68 (described in FIG. 7) and the wiring CSCOM. Here, the touch sensor 63(1,1) will be described as an example. The gate of the selection transistor 64a is electrically connected to the scanning line 65(1). Either the source or the drain of the selection transistor 64a is electrically connected to the signal line 66. The pixel electrode 68 and one of the electrodes

[0074] The touch wiring COM-Rx(1) is arranged on the touch sensor 63(1,1). The touch wiring COM-Rx(1) functions as one of the electrodes of the detection element of the touch sensor and the touch wiring COM-Tx(1) functions as the other of the electrodes of the detection element of the touch sensor. Therefore, the touch sensor 63(1,1) forms the capacitive element 67 with the touch wiring COM-Tx(1) and the touch wiring COM-Rx(1) as a pair of electrodes and as the detection element. When the touch wiring COM-Tx and the touch wiring COM-Rx operate as part of the touch sensor 63, as shown in FIG. 2, a scanning signal is applied to the touch wiring COM-Tx. Therefore, based on the amount of change in the electrical signal transmitted by the touch wiring COM-Rx, the presence or absence of a touch can be detected. Thus, the touch sensor 63 can independently detect the presence or absence of a touch.

[0075] In the configuration shown in FIG. 3, as shown in FIG. 1(B), the touch sensors 63(1,1) and 63(1,4) can simultaneously detect a touch. Since one of the electrodes of the detection element is independent, it is not affected by other touch sensors. Also, as an example, the touch sensors 63(1,1), 63(2,1), 63(3,4), and 63(4,4) can be simultaneously detected. Therefore, the touch sensor 63 arranged in a specific area can be selectively detected. Thus, when only a part of the display is updated, the touch can be partially detected in accordance with the display.

[0076] In the configuration shown in FIG. 3, as shown in FIG. 1(B), the touch sensors 63(1,1) and 63(1,4) can simultaneously detect a touch. Since one of the electrodes of the detection element is independent, it is not affected by other touch sensors. Also, as an example, the touch sensors 63(1,1), 63(2,1), 63(3,4), and 63(4,4) can be simultaneously detected. Since one of the electrodes of the detection element is independent, it is not affected by other touch sensors. Also, as an example, the touch sensors 63(1,1), 63(2,1), 63(3,4), and 63(4,4) can be simultaneously detected. Since one of the electrodes of the detection element is independent, it is not affected by other touch sensors. Also, as an example, the touch sensors 63(1,1), 63(2,1), 63(3,4), and 63(4,4) can be simultaneously detected. Since one of the electrodes of the detection element is independent, it is not affected by other touch sensors. Also, as an example, the touch sensors 63(1,1), 63(2,1), 63(3,4), and 63(4,4) can be simultaneously detected. Since one of the electrodes of the detection element is independent, it is not affected by other touch sensors. Also, as an example, the touch sensors 63(1,1), 63(2,1), 63(3,4), and 63(4,4) can be simultaneously detected.

[0077] Therefore, the touch sensor 63 arranged in a specific area can be selectively detected. Thus, when only a part of the display is updated, the touch can be partially detected in accordance with the display. Therefore, the touch sensor 63 arranged in a specific area can be selectively detected. Thus, when only a part of the display is updated, the touch can be partially detected in accordance with the display.​​​ The function of the sensor can be enabled or disabled.

[0078] In FIG. 4, a configuration different from the touch sensor 63 described in FIG. 3 will be described.

[0079] The wiring CSCOM is electrically connected to terminal 2 of the switch 61h, which is different. Terminal 1 of the switch 61h is electrically connected to the wiring COM. Terminal 3 of the switch 61 h is electrically connected to the touch wiring COM-Rx.

[0080] The switch 61h is electrically connected to the wiring CTRL and a signal Sel is applied. When the signal Sel is "L", terminals 1 and 2 of the switch 61h are electrically conductive, and the common potential applied to the wiring CO M is applied to the wiring CSCOM. When the signal Sel is "H", terminals 2 and 3 of the switch 61h are electrically conductive, and the detection signal Sen of the wiring CSCOM is output to the touch wiring COM-Rx.

[0081] Therefore, when a pixel displays, a common potential is applied to the wiring CSCOM as the reference potential of the liquid crystal display element 64c. When the wiring CSCOM operates as part of the touch sensor, it is given the function of one of the electrodes of the detection element of the touch sensor, and the touch wiring COM-Tx is given the function of the other electrode of the detection element of the touch sensor. The touch sensor 63 forms a capacitive element 67 as a detection element with the touch wiring COM-Tx and the wiring CSCOM as a pair of electrodes. When the signal Sel is "L",

[0082] a common potential is applied to the touch wiring COM-Tx and the wiring CSCOM via the wiring COM. When the signal Sel is "L", a common potential is applied to the touch wiring COM-Tx and the wiring CSCOM via the wiring COM. Therefore, since the capacitance value of the capacitive element 67 can be canceled, it does not affect the display quality.

[0083] During the period when the signal Sel is “H”, since the wiring CSCOM operates as one of the electrodes of the detection element of the touch sensor, the selection transistor 64a of the pixel 64 is required to have a low off-current. .

[0084] When the touch wiring COM-Tx and the wiring CSCOM operate as part of the touch sensor, as shown in FIG. 2, a scanning signal is applied to the touch wiring COM-Tx. The liquid crystal display element 64c represents the display gradation by the liquid crystal whose alignment direction changes due to the potential difference between the pixel electrode and the wiring CSCOM. Therefore, it is preferable that the gradation voltage held in the capacitive element 64b does not change. By reducing the off-current of the selection transistor 64a, the leak through the selection transistor 64a can be suppressed. Even if the voltage value of the wiring CSCOM changes, since the off-current of the selection transistor is small, the change in gradation can be suppressed.

[0085] The gate driver 61 shown in FIG. 2 can control the display and the touch detection with one gate driver 61. The display and the touch detection can be controlled at different timings. Therefore, since the signal-to-noise ratio (Signal / Noise ratio ) of the touch sensor can be increased, the detection accuracy can be improved. )

[0086] FIG. 5 shows a cross-sectional schematic view of the touch sensor of the display device 10. Note that the cross-sectional schematic view shown in FIG. 5 depicts only the components necessary for explaining the operation of the touch sensor. For example ​​​​​​​​​For example, there may be a case where elements such as transistors are provided on the substrate 11, but this will be omitted here. Let's do that.

[0087] The touch sensor shown in FIG. 5(A) includes a substrate 11, a substrate 12, an FPC 13, a conductive layer 14, a liquid crystal element 20, a coloring film 31, etc.

[0088] The liquid crystal element 20 is composed of a conductive layer 21, a conductive layer 22, and liquid crystal 23. A conductive layer 2 2 is disposed on the conductive layer 21 via an insulating layer 24. The conductive layer 21 functions as a pixel electrode of the liquid crystal element 20, and the conductive layer 22 functions as a common electrode.

[0089] The conductive layer 21 and the conductive layer 22 are arranged to form an electric field intersecting with the thickness direction of the liquid crystal 23 (the direction of A1 - A2 in the figure). They are arranged to form an electric field intersecting with the thickness direction of the liquid crystal 23 (the direction of A1 - A2 in the figure).

[0090] The touch sensor can detect by using the capacitance formed between the conductive layer 22a or the conductive layer 22b that functions as one of the pair of electrodes of the liquid crystal element 20 provided on the substrate 11 side and the conductive layer 22c that functions as a touch wiring COM - Tx. They are arranged to form an electric field intersecting with the thickness direction of the liquid crystal 23 (the direction of A1 - A2 in the figure).

[0091] In FIG. 5(B), an example is shown in which the conductive layer 21a and the conductive layer 21b that function as pixel electrodes of the liquid crystal element 20 function as a pair of electrodes of the touch sensor.

[0092] In FIG. 5(C), an example is shown in which the conductive layer 22a that functions as a common electrode of the liquid crystal element 20 and the conductive layer 22b function as a pair of electrodes of the touch sensor.

[0093] In FIG. 5(A), one of the electrodes of the touch sensor can be also served as one of the electrodes of the liquid crystal element 20. By adopting the configuration shown in FIG. 5(B) or (C), a pair of electrodes of the touch sensor Both can also serve as one of the electrodes of the liquid crystal element 20.

[0094] Furthermore, since the conductive layer 22a, the conductive layer 22b, and the conductive layer 22c can be formed of the same conductive layer, the process can be simplified. Also, for the conductive layer 21a and the conductive layer 21 b, since they can also be formed of the same conductive layer, the process can be simplified. b, the process can be simplified.

[0095] The cross-sectional schematic diagram shown in FIG. 6(A) uses FIG. 5(A) to explain the light extraction method.

[0096] FIG. 6(A) shows an example in which conductive layers having translucency are used for the conductive layer 21 and the conductive layer 22. Therefore, the display device 10 preferably has a light source that emits visible light L1 provided on the lower side of the substrate 11. The visible light L1 incident from the direction of the substrate 11 has its gradation controlled by the liquid crystal element sandwiched between the substrate 11 and the substrate 12, and the liquid crystal element can emit light whose gradation is controlled in the direction of the substrate 12. The visible light L1 incident from the direction of the substrate 11 has its gradation controlled by the liquid crystal element sandwiched between the substrate 11 and the substrate 12, and the liquid crystal element can emit light whose gradation is controlled in the direction of the substrate 12. The visible light L1 incident from the direction of the substrate 11 has its gradation controlled by the liquid crystal element sandwiched between the substrate 11 and the substrate 12, and the liquid crystal element can emit light whose gradation is controlled in the direction of the substrate 12. The visible light L1 incident from the direction of the substrate 11 has its gradation controlled by the liquid crystal element sandwiched between the substrate 11 and the substrate 12, and the liquid crystal element can emit light whose gradation is controlled in the direction of the substrate 12.

[0097] FIG. 6(B) is different from FIG. 6(A) in that the conductive layer 21 is formed of a conductive layer that reflects visible light. Therefore, the light L2 incident from the substrate 12 is reflected by the conductive layer 21 and then emitted from the substrate 12. FIG. 6(B) is different from FIG. 6(A) in that the conductive layer 21 is formed of a conductive layer that reflects visible light. Therefore, the light L2 incident from the substrate 12 is reflected by the conductive layer 21 and then emitted from the substrate 12. FIG. 6(B) is different from FIG. 6(A) in that the conductive layer 21 is formed of a conductive layer that reflects visible light. Therefore, the light L2 incident from the substrate 12 is reflected by the conductive layer 21 and then emitted from the substrate 12.

[0098] By performing display using external light, a light source is not required as in the display device shown in FIG. 6(A), and thus the number of components constituting the display device can be reduced. By performing display using external light, a light source is not required as in the display device shown in FIG. 6(A), and thus the number of components constituting the display device can be reduced. Also, the power consumed by the light source can be reduced. Furthermore, in a bright environment such as under sunlight, since the luminance of the reflected light increases in proportion to the luminance of the external light, the visibility can be improved. Also, the power consumed by the light source can be reduced. Furthermore, in a bright environment such as under sunlight, since the luminance of the reflected light increases in proportion to the luminance of the external light, the visibility can be improved. Also, the power consumed by the light source can be reduced. Furthermore, in a bright environment such as under sunlight, since the luminance of the reflected light increases in proportion to the luminance of the external light, the visibility can be improved.

[0099] It is preferable that the conductive layer that reflects visible light has a high reflectance. When performing reflective display using external light, it has the function of obtaining high brightness.

[0100] Examples of conductive materials that are transparent to visible light include indium (In), zinc (Zn It is advisable to use a material containing one of the following elements: indium oxide (InO2) and tin (Sn). Indium, Indium Tin Oxide, Indium Zinc Oxide Indium oxide with tungsten oxide, indium oxide with tungsten oxide Lead oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide, Examples include indium tin oxide containing silicon oxide, zinc oxide, and zinc oxide containing gallium. A film containing graphene can also be used. The film containing graphene can be, for example, For example, the graphene oxide film can be formed by reducing the graphene oxide film.

[0101] Examples of conductive materials that reflect visible light include aluminum, silver, and metals thereof. Other examples include alloys containing gold, platinum, nickel, tungsten, and chromium. , molybdenum, iron, cobalt, copper, palladium, or other metallic materials, or these metallic materials In addition, the above-mentioned metal material or alloy may contain lanthanum, neodymium, etc. Aluminum, titanium, or germanium may be added. Alloys of aluminum and nickel, alloys of aluminum and neodymium, aluminum, nickel, and Aluminum alloys such as lanthanum alloys (Al-Ni-La) ) Alloys containing silver such as alloys of silver and copper, alloys of silver, palladium and copper (also denoted as Ag-Pd-Cu, APC), may also use alloys containing silver such as alloys of silver and magnesium.

[0102] Fig. 7(A) shows a top view of the touch sensor 63 shown in Fig. 3. Using the example shown in Fig. 3, the touch sensor 63 having six pixels 64 will be described. The touch sensor 63 may have a plurality of pixels 64, and the number is not limited. In the top view of Fig. 7(A), an example of arranging R elements, G elements, and B elements (coloring film 31 in Fig. 5) in a stripe shape is shown.

[0103] Fig. 7(A) has a plurality of scanning lines 65, a plurality of signal lines 66, a wiring CSCOM, a touch wiring COM-Tx, a touch wiring COM-Rx, and a plurality of pixels 64. Each pixel 64 has a selection transistor 64a, a capacitive element 64b, and a pixel electrode 68.

[0104] As an example, the pixel 64 connected to the scanning line 65a will be described. The gate of the selection transistor 64a included in the pixel 64 is electrically connected to the scanning line 65a. Also, one of the source or drain of the selection transistor 64a is electrically connected to the signal line 66R. Also, the other of the source or drain of the selection transistor 64a and the same conductive layer form one electrode of the capacitive element 64b. The capacitive element 64b is formed in a region overlapping the wiring CSCOM. Also, the pixel electrode 68 is formed by the same conductive layer as the other of the source or drain of the selection transistor 64a.

[0105] The other electrode of the capacitive element 64b is electrically connected to the common electrode 64f via the contact 64d. is connected. The gradation of the display is controlled by the liquid crystal whose alignment direction changes due to the potential difference between the pixel electrode 68 and the common electrode 64f. Therefore, the liquid crystal 23 is arranged on the common electrode 64f as shown in Fig. 5(A). The touch wiring COM-Rx is electrically connected to the wiring 64h via the contact 64g. The touch sensor 63 constitutes a capacitive element 67 having a detection function with the wiring 64h and the touch wiring COM-Tx as a pair of electrodes. Therefore, it is preferable that the touch wiring COM-Tx and the touch wiring COM-Rx are formed of the same conductive layer.

[0106] Also, the touch wiring COM-Rx is electrically connected to the wiring 64h via the contact 64g. The touch sensor 63 constitutes a capacitive element 67 having a detection function with the wiring 64h and the touch wiring COM-Tx as a pair of electrodes. Therefore, it is preferable that the touch wiring COM-Tx and the touch wiring COM-Rx are formed of the same conductive layer.

[0107] In Fig. 7(A), the touch wiring COM-Rx(2) and the touch wiring COM-Rx(3) are shown, but they are electrically connected to a touch sensor arranged at a different position from the touch sensor 63 shown in Fig. 7(A). The touch wiring COM-Rx may be provided as appropriate according to the number of pixels 64 of the touch sensor 63. Therefore, when the touch sensor 63 has a large number of pixels 64, the touch wiring COM-Rx(2) and the touch wiring COM-Rx(3) shown in Fig. 7(A) may not be provided.

[0108] The touch sensor 63 can control the detection sensitivity according to the size of the capacitive element 67 having the detection function. Since the number of pixels of the touch sensor 63 is proportional to the size of the capacitive element 67, the number of pixels 64 and the number of touch wirings COM-Tx can be selected as appropriate so that the capacitive element 67 has an optimal size.

[0109] ​​​​​​​​​​​​​FIG. 7(B) shows a top view of the touch sensor 63 shown in FIG. 4. The structure different from that in FIG. 7(A) will be described. will be described.

[0110] FIG. 7(B) has a plurality of scanning lines 65, a plurality of signal lines 66, a plurality of wirings CSCOM, a touch wiring COM-Tx, and a plurality of pixels 64. Each pixel 64 has a selection transistor 64a, a capacitive element 64b, and a pixel electrode 68.

[0111] Also, one of the electrodes of the capacitive element 64b is electrically connected to the wiring CSCOM( 1) via a contact 64e, which is different. The wiring CSCOM(1) has a common electrode function in each pixel 64 of the touch sensor 63. has a common electrode function in each pixel 64 of the touch sensor 63.

[0112] In FIG. 7(B), the wirings CSCOM(2) and CSCOM(3) are shown, but the touch sensor 63 shown in FIG. 7 (B) is electrically connected to a touch sensor arranged at a different position. The wiring CSCOM may be provided as necessary according to the number of pixels 64 of the touch sensor 63. Therefore, when the touch sensor 63 has a large number of pixels 64, the wirings CSCOM(2) and CSCOM(3) shown in FIG. 7(B) may not be provided . the wirings CSCOM(2) and CSCOM(3) shown in FIG. 7(B) may not be provided .

[0113] The touch wiring COM-Tx is at an equal distance from the common electrode 64f of each pixel, and a capacitive element 67 having a detection function is formed with the touch wiring COM-Tx and the common electrode 64f as a pair of electrodes. Therefore, it is preferable that the touch wiring COM-Tx and the common electrode 6 4f are formed of the same conductive layer. 4f are formed of the same conductive layer. 4f are preferably formed of the same conductive layer.

[0114] <Cross-sectional structure of the display device> As an example of the cross-sectional structure of a display device, a display device that functions as an in-cell type touch panel will be described. Representative in-cell type touch panels include the hybrid in-cell type and the full in-cell type. Hereinafter, the cross-sectional structure of a full in-cell type touch panel using a liquid crystal element as a display element will be described. A full in-cell type touch panel using a liquid crystal element as a display element functions as a liquid crystal display device.

[0115] Note that a liquid crystal display device that functions as a full in-cell type touch panel has a simplifiable counter substrate configuration, which is preferable. Also, in this liquid crystal display device, the electrodes constituting the display element also serve as the electrodes constituting the detection element, so the manufacturing process can be simplified and the manufacturing cost can be reduced, which is preferable.

[0116] FIG. 8(A) shows a top view of a liquid crystal display device 200 that can function as a touch panel, and FIG. 8(B) shows cross-sectional views between the dashed-dotted line A-B and the dashed-dotted line C-D in FIG. 8(A). .

[0117] As shown in FIG. 8(A), the liquid crystal display device 200 has a display unit 201 and a gate line driving circuit 202. The display unit 201 has a plurality of pixels 203, a plurality of source lines, and a plurality of gate lines, and has a function of displaying an image. Also, the display unit 201 is also an input unit. That is, the display unit has a plurality of detection elements that detect the touch or proximity of the liquid crystal display device 200 by the object to be detected, and has a function as a touch sensor. The gate line driving circuit 202 has a function of outputting a scanning signal to the gate lines that the display unit 201 has. The pixel 203 has a plurality of sub-pixels. In FIG. 8(A), an example in which the pixel 203 has three sub-pixels is shown, but in the present invention One aspect is not limited to this.

[0118] In FIG. 8(A), an example where the liquid crystal display device 200 has a gate line driving circuit is shown, but one aspect of the present invention is not limited to this. The liquid crystal display device 200 does not necessarily have all of a gate line driving circuit, a source line driving circuit, and a sensor driving circuit, or may have any one or more of them. One aspect of the present invention is not limited to this. The liquid crystal display device 200 does not necessarily have all of a gate line driving circuit, a source line driving circuit, and a sensor driving circuit, or may have any one or more of them. One aspect of the present invention is not limited to this. The liquid crystal display device 200 does not necessarily have all of a gate line driving circuit, a source line driving circuit, and a sensor driving circuit, or may have any one or more of them. One aspect of the present invention is not limited to this. The liquid crystal display device 200 does not necessarily have all of a gate line driving circuit, a source line driving circuit, and a sensor driving circuit, or may have any one or more of them.

[0119] In the liquid crystal display device 200, the IC 368 is mounted on the substrate 311 by a mounting method such as the COG method. The IC 368 may have any one or more of, for example, a source line driving circuit, a gate line driving circuit, and a sensor driving circuit. In the liquid crystal display device 200, the IC 368 is mounted on the substrate 311 by a mounting method such as the COG method. The IC 368 may have any one or more of, for example, a source line driving circuit, a gate line driving circuit, and a sensor driving circuit. In the liquid crystal display device 200, the IC 368 is mounted on the substrate 311 by a mounting method such as the COG method. The IC 368 may have any one or more of, for example, a source line driving circuit, a gate line driving circuit, and a sensor driving circuit.

[0120] Also, an FPC 369 is connected to the liquid crystal display device 200. Signals are supplied to the IC 368 and the gate line driving circuit from the outside via the FPC 369. Also, signals can be output from the IC 368 to the outside via the FPC 369. Also, an FPC 369 is connected to the liquid crystal display device 200. Signals are supplied to the IC 368 and the gate line driving circuit from the outside via the FPC 369. Also, signals can be output from the IC 368 to the outside via the FPC 369. Also, an FPC 369 is connected to the liquid crystal display device 200. Signals are supplied to the IC 368 and the gate line driving circuit from the outside via the FPC 369. Also, signals can be output from the IC 368 to the outside via the FPC 369.

[0121] An IC may be mounted on the FPC 369. For example, an IC having any one or more of a source line driving circuit, a gate line driving circuit, and a sensor driving circuit may be mounted on the FPC 369. For example, an IC can be mounted on the FPC 369 by a mounting method such as the COF method or the TAB (Tape Automated Bonding) method. An IC may be mounted on the FPC 369. For example, an IC having any one or more of a source line driving circuit, a gate line driving circuit, and a sensor driving circuit may be mounted on the FPC 369. For example, an IC can be mounted on the FPC 369 by a mounting method such as the COF method or the TAB (Tape Automated Bonding) method. An IC may be mounted on the FPC 369. For example, an IC having any one or more of a source line driving circuit, a gate line driving circuit, and a sensor driving circuit may be mounted on the FPC 369. For example, an IC can be mounted on the FPC 369 by a mounting method such as the COF method or the TAB (Tape Automated Bonding) method. An IC may be mounted on the FPC 369. For example, an IC having any one or more of a source line driving circuit, a gate line driving circuit, and a sensor driving circuit may be mounted on the FPC 369. For example, an IC can be mounted on the FPC 369 by a mounting method such as the COF method or the TAB (Tape Automated Bonding) method. An IC may be mounted on the FPC 369. For example, an IC having any one or more of a source line driving circuit, a gate line driving circuit, and a sensor driving circuit may be mounted on the FPC 369. For example, an IC can be mounted on the FPC 369 by a mounting method such as the COF method or the TAB (Tape Automated Bonding) method.

[0122] For example, the IC 368 may have a source line driving circuit and a sensor driving circuit. Also, for example, the IC 368 may have a source line driving circuit, and the IC mounted on the FPC 369 may have a sensor driving circuit. For example, the IC 368 may have a source line driving circuit and a sensor driving circuit. Also, for example, the IC 368 may have a source line driving circuit, and the IC mounted on the FPC 369 may have a sensor driving circuit. For example, the IC 368 may have a source line driving circuit and a sensor driving circuit. Also, for example, the IC 368 may have a source line driving circuit, and the IC mounted on the FPC 369 may have a sensor driving circuit.

[0123] As shown in FIG. 8(B), the liquid crystal display device 200 has a transistor 38 0a, a transistor 370a, a connection portion 305a, a liquid crystal element 307a, etc. on a substrate 311.

[0124] In FIG. 8(B), a cross-section of one sub-pixel is shown as an example of the display portion 201. For example , one pixel is composed of a sub-pixel that exhibits red, a sub-pixel that exhibits green, and a sub-pixel that exhibits blue, so that the display portion 201 can perform full-color display. Note that the color exhibited by the sub-pixel is not limited to red, green, and blue. For the pixel, for example, a sub-pixel that exhibits a color such as white, yellow, magenta , or cyan may be used.

[0125] The transistors 380a and 370a have a conductive layer 373, an insulating layer 312, an insulating layer 315, an ins ulating layer 313, a polysilicon film 372, a conductive layer 374a, and a conductive layer 374b.

[0126] The conductive layer 373 can function as a gate or a back gate. The conductive layer 37 4a can function as one of a source electrode or a drain electrode. The conductive layer 374 b can function as the other of a source electrode or a drain electrode.

[0127] The polysilicon film 372 has an impurity region formed by adding an impurity element . Note that the polysilicon film 372 may have a lightly doped drain (LDD) region formed by adding an impurity element at a low concentration .

[0128] Note that the polysilicon film 372 is formed by forming an amorphous silicon film by a sputtering method, an LPCVD method, a plasma CVD method, etc., and then performing a crystallization process (laser crystallization method, thermal crystallization method ). 、 or a crystal structure crystallized by a thermal crystallization method using a catalyst such as nickel and uses a semiconductor film having the same.

[0129] Transistors 380a and 370a have a polysilicon film in the semiconductor layer. A transistor having a polysilicon film can increase the field-effect mobility compared to a transistor having amorphous silicon, and can increase the on-current. As a result , a circuit capable of high-speed operation can be fabricated. Furthermore, the occupied area of the circuit portion can be reduced .

[0130] Transistors 380a and 370a are covered by an insulating layer 317 and an insulating layer 319. Note that the insulating layer 317, and further the insulating layer 319, can also be regarded as components of transistors 380a and 370a.

[0131] Liquid crystal element 307a is a liquid crystal element to which the FFS (Fringe Field Switching) mode is applied. Liquid crystal element 307a has a conductive layer 351, a conductive layer 352, and liquid crystal 349. The alignment of liquid crystal 3 49 can be controlled by an electric field generated between the conductive layer 351 and the conductive layer 352. The conductive layer 351 can function as a pixel electrode . The conductive layer 352 can function as a common electrode.

[0132] By using a conductive material that transmits visible light for the conductive layer 351 and the conductive layer 352, the liquid crystal display device 200 can be made to function as a transmissive liquid crystal display device. Also, by using a conductive material that reflects visible light for the conductive layer 351 and a conductive material that transmits visible light for the conductive layer 352 By using the material, the liquid crystal display device 200 can be made to function as a reflective liquid crystal display device. This is possible.

[0133] The conductive layer 351 that functions as a pixel electrode is electrically connected to the source or drain of the transistor 370a. Here, an example where the conductive layer 351 is electrically connected to the conductive layer 374b is shown. An example is shown.

[0134] The conductive layer 352 has a comb-like upper surface shape (also referred to as a planar shape) or an upper surface shape provided with slits. An insulating layer 353 is provided between the conductive layer 351 and the conductive layer 352. The conductive layer 351 has a portion that overlaps the conductive layer 352 via the insulating layer 353. Also, in the region where the conductive layer 351 and the coloring film 341 overlap, there is a portion where the conductive layer 352 is not disposed on the conductive layer 351. An insulating layer 353 is provided. The conductive layer 351 has a portion overlapping the conductive layer 352 via the insulating layer 353. Also, in the region where the conductive layer 351 and the coloring film 341 overlap, there is a portion where the conductive layer 352 is not disposed on the conductive layer 351. An insulating layer 353 is provided. The conductive layer 351 has a portion overlapping the conductive layer 352 via the insulating layer 353. Also, in the region where the conductive layer 351 and the coloring film 341 overlap, there is a portion where the conductive layer 352 is not disposed on the conductive layer 351. In the region where the conductive layer 351 and the coloring film 341 overlap, there is a portion where the conductive layer 352 is not disposed on the conductive layer 351. There is a portion where the conductive layer 352 is not disposed on the conductive layer 351.

[0135] The connection portion 305a is electrically connected to an external input terminal that transmits an external signal (such as a video signal, a clock signal, a start signal, or a reset signal) or a potential to the gate line driving circuit 202. Here, an example where the FPC 369 is provided as the external input terminal is shown. The connection portion 305a is electrically connected to an external input terminal that transmits an external signal (such as a video signal, a clock signal, a start signal, or a reset signal) or a potential to the gate line driving circuit 202. Here, an example where the FPC 369 is provided as the external input terminal is shown. The connection portion 305a is electrically connected to an external input terminal that transmits an external signal (such as a video signal, a clock signal, a start signal, or a reset signal) or a potential to the gate line driving circuit 202. Here, an example where the FPC 369 is provided as the external input terminal is shown.

[0136] The connection portion 305a has a conductive layer 331 on the insulating layer 313, a conductive layer 333 on the conductive layer 331, and a conductive layer 335 on the conductive layer 333. The conductive layer 331 is electrically connected to the conductive layer 335 via the conductive layer 333. And the conductive layer 335 is electrically connected to the FPC 369 via the connector 367. The connection portion 305a has a conductive layer 331 on the insulating layer 313, a conductive layer 333 on the conductive layer 331, and a conductive layer 335 on the conductive layer 333. The conductive layer 331 is electrically connected to the conductive layer 335 via the conductive layer 333. And the conductive layer 335 is electrically connected to the FPC 369 via the connector 367. The connection portion 305a has a conductive layer 331 on the insulating layer 313, a conductive layer 333 on the conductive layer 331, and a conductive layer 335 on the conductive layer 333. The conductive layer 331 is electrically connected to the conductive layer 335 via the conductive layer 333. And the conductive layer 335 is electrically connected to the FPC 369 via the connector 367. And the conductive layer 335 is electrically connected to the FPC 369 via the connector 367.

[0137] The conductive layer 331 can be formed of the same material and in the same process as the conductive layers 374a and 374b of the transistors 380a and 370a. The conductive layer 333 is for the liquid crystal element 333 is for the liquid crystal element It can be formed of the same material and by the same process as the conductive layer 351 included in 307a. The conductive layer 335 can be formed of the same material and by the same process as the conductive layer 352 included in the liquid crystal element 307a. In this way, if the conductive layer constituting the connection portion 305a is manufactured of the same material and by the same process as the electrodes and wirings used in the display portion and the drive circuit portion, it is possible to prevent an increase in the number of processes, which is preferable.

[0138] A coloring film 341, a light-shielding film 343, and an insulating layer 345 are provided on the substrate 361. In FIG. 8(B), an example in which the thickness of the substrate 361 is thinner than the thickness of the substrate 311 is shown, but one aspect of the present invention is not limited to this. The substrate 361 and the substrate 311 may be such that one is thinner than the other, or they may have the same thickness. Making the substrate on the display surface side (the side closer to the object to be detected) thinner can increase the detection sensitivity of the detection element, which is preferable.

[0139] The coloring film 341 has a portion overlapping with the liquid crystal element 307a. The light-shielding film 343 has a portion overlapping with at least one of the transistors 380a and 370a.

[0140] The insulating layer 345 preferably functions as an overcoat for preventing impurities contained in the coloring film 341, the light-shielding film 343, etc. from diffusing into the liquid crystal 349. The insulating layer 345 need not be provided if it is not necessary.

[0141] Note that an alignment film may be provided on the surfaces of the substrates 311 and 361 that are in contact with the liquid crystal 349. The alignment film can control the alignment of the liquid crystal 349. For example, in FIG. 8(B), an alignment film covering the conductive layer 352 may be formed. Also, in FIG. 8(B), an insulative ​​​​​​An alignment film may be provided between the edge layer 345 and the liquid crystal 349. Further, the insulating layer 345 may have both a function as an alignment film and a function as an overcoat.

[0142] The liquid crystal display device 200 also has spacers 347. The spacers 347 have a function of preventing the distance between the substrate 311 and the substrate 361 from approaching a certain level or closer.

[0143] In FIG. 8(B), an example is shown in which the spacers 347 are provided on the insulating layer 353 and the conductive layer 352, but one aspect of the present invention is not limited thereto. The spacers 347 may be provided on the substrate 311 side or on the substrate 361 side. For example, the spacers 347 may be formed on the insulating layer 345. Further, in FIG. 8(B), an example is shown in which the spacers 347 are in contact with the insulating layer 353 and the insulating layer 345, but they do not have to be in contact with a structure provided on either the substrate 311 side or the substrate 361 side.

[0144] Granular spacers may be used as the spacers 347. As the granular spacers, materials such as silica can be used, but it is preferable to use materials having elasticity such as resin or rubber. At this time, the granular spacers may be in a shape that is crushed in the vertical direction.

[0145] The substrate 311 and the substrate 361 are bonded together by an adhesive layer 365. The liquid crystal 349 is sealed in the region surrounded by the substrate 311, the substrate 361, and the adhesive layer 365.

[0146] When the liquid crystal display device 200 is made to function as a transmissive liquid crystal display device, two polarizing plates are arranged so as to sandwich the display portion. Light from a backlight arranged outside the polarizing plates Light is incident through a polarizing plate. At this time, the voltage applied between the conductive layer 351 and the conductive layer 352 is The orientation of the liquid crystal 349 can be controlled by pressure, and the optical modulation of light can be controlled. The intensity of the light emitted through the polarizing plate can be controlled. Since light outside a specific wavelength range is absorbed by 41, the emitted light is, for example, red, blue, The light will have a red or green color.

[0147] In addition to the polarizing plate, for example, a circular polarizing plate can be used. For example, a laminate of a linear polarizing plate and a quarter-wave retardation plate can be used. This makes it possible to reduce the viewing angle dependency of the display of the liquid crystal display device.

[0148] In this example, an element to which the FFS mode is applied is used as the liquid crystal element 307a. Liquid crystal elements using various modes can be used. For example, VA( Vertical Alignment mode, TN (Twisted Neutral c) mode, IPS (In-Plane-Switching) mode, ASM (Axi ally Symmetric aligned Micro-cell) mode, OC B (Optically Compensated Birefringence) mode mode, FLC (Ferroelectric Liquid Crystal) mode, A FLC (AntiFerroelectric Liquid Crystal) mode ,VA-IPS(Vertical Alignment In-Plane-Swit A liquid crystal element to which a shifting mode or the like is applied can be used.

[0149] In addition, a normally black type liquid crystal display device, for example, a transmissive liquid crystal display device adopting a vertical alignment ( VA) mode may be applied to the liquid crystal display device 200. As the vertical alignment mode there are, for example, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV mode, etc. that can be used.

[0150] Note that a liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of liquid crystal. Note that the optical modulation action of liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field or an oblique electric field). Note that as the liquid crystal used for the liquid crystal element, thermotropic liquid crystal, low molecular liquid crystal, high molecular liquid crystal, polymer dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal), ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. These liquid crystal materials may exhibit a blue phase, a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, etc. depending on conditions.

[0151] In addition, as the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used, and an optimal liquid crystal material may be used according to the mode and design to be applied.

[0152] Here, a substrate that is directly touched by a detection object such as a finger or a stylus may be provided above the substrate 361. At this time, it is preferable to provide a polarizing plate or a circular polarizing plate between the substrate 361 and the said substrate. In that case, it is preferable to provide a protective layer (such as a ceramic coat) on the said substrate. The protective layer is, for example, silicon oxide, aluminum oxide, yttrium oxide, Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. Also , strengthened glass may be used for the substrate. The strengthened glass is subjected to physical or chemical treatment such as the ion exchange method or the air-cooling strengthening method, and the one with compressive stress applied to its surface can be used.

[0153] Also, FIG. 9 shows a cross-sectional view of two adjacent sub-pixels. The two sub-pixels shown in FIG. 9 are sub-pixels of different pixels respectively.

[0154] In FIG. 9, by using the capacitance formed between the conductive layer 352 of the liquid crystal element 307b of the sub-pixel and the wiring 352a, and the capacitance formed between the conductive layer 352 of the liquid crystal element 307a of the adjacent sub-pixel and the wiring 352a, the proximity or touch of the object to be detected can be detected. The wiring 352a is arranged between the two conductive layers 352. That is, in the liquid crystal display device of one aspect of the present invention, the conductive layer 352 serves as both the common electrode of the liquid crystal element and the electrode of the detection element.

[0155] Thus, in the liquid crystal display device of one aspect of the present invention, since the electrode constituting the liquid crystal element also serves as the electrode constituting the detection element, the manufacturing process can be simplified and the manufacturing cost can be reduced. Also, the thickness and weight of the liquid crystal display device can be reduced.

[0156] Also, if the capacitance between the electrode of the detection element and the signal line is too large, the time constant of the electrode of the detection element may become large. Therefore, it is preferable to provide an insulating layer having a flattening function between the transistor and the electrode of the detection element to reduce the capacitance between the electrode of the detection element and the signal line. Yes. For example, in FIG. 9, an insulating layer 319 having a planarization function is provided. By providing the insulating layer 319, the capacitance between the conductive layer 352 and the signal line can be reduced. As a result, the time constant of the electrode of the sensing element can be reduced. As described above, the smaller the time constant of the electrode of the sensing element, the higher the sensing sensitivity can be increased, and further, the accuracy of sensing can be increased.

[0157] For example, the time constant of the electrode of the sensing element is greater than 0 seconds and 1×10 -4 seconds or less, preferably greater than 0 seconds and 5×10 -5 seconds or less, more preferably greater than 0 seconds and 5×10 -6 seconds or less , more preferably greater than 0 seconds and 5×10 -7 seconds or less, more preferably greater than 0 seconds and 2 ×10 -7 seconds or less. In particular, by setting the time constant to 1×10 -6 seconds or less, high sensing sensitivity can be achieved while suppressing the influence of noise.

[0158] Next, details of materials and the like that can be used for each component of the liquid crystal display device of the present embodiment will be described.

[0159] ≪Substrate≫ There are no major restrictions on the material of the substrate included in the liquid crystal display device 200, but at least, it is necessary to have heat resistance sufficient to withstand subsequent heat treatment. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, or the like may be used. Further, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can also be applied, and semiconductor elements are provided on these substrates. ​​​​Those may be used as substrates 311 and 361. Note that as the substrates 311 and 361, when using a glass substrate, large-area substrates such as the 6th generation (1500 mm × 1850 mm), 7th generation (187 0 mm × 2200 mm), 8th generation (2200 mm × 2400 mm), 9th generation (240 0 mm × 2800 mm), 10th generation (2950 mm × 3400 mm), etc. can be used to fabricate a large-sized display device. Also, as the substrates 311 and 361, a flexible substrate may be used, and transistors, capacitor elements, etc. may be directly formed on the flexible substrate. By using a thin substrate, the weight reduction and thickness reduction of the liquid crystal display device can be achieved. Furthermore, by using a substrate with a thickness that has flexibility, a flexible liquid crystal display device

[0160] can be realized. In addition to these, various substrates can be used as the substrates 311 and 361 to form transistors. The type of substrate is not limited to a specific one. An example of such a substrate is a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible

[0161] substrate, a laminated film, a paper containing a fibrous material, or a base film, etc. An example of a glass substrate is barium borosilicate glass, aluminoborosilicate glass, or soda lime glass, etc. An example of a flexible substrate is polyethylene terephthalate (PET), polyethylene naphthalate (PEN), a plastic typified by polyethersulfone (PES ), or a synthetic resin having flexibility such as acrylic, etc. An example of a laminated film is a film obtained by laminating a metal foil and a resin film, or a film obtained by laminating a conductive film and a resin film, etc. In addition, as the substrates 311 and 361, various substrates can be used to form transistors. The type of substrate is not limited to a specific one. An example of such a substrate is a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless steel foil, a tungsten substrate, a substrate having a tungsten foil, a flexible substrate, a laminated film, a paper containing a fibrous material, or a base film, etc. An example of a glass substrate Examples of the bonding film include polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Examples of the base film include polyester, polyamide, imide, inorganic vapor deposition film, or paper. In particular, by manufacturing a transistor using a semiconductor substrate, a single crystal substrate, or an SOI substrate, etc., a transistor with less variation in characteristics, size, or shape, high current capacity, and small size can be manufactured. When a circuit is configured with such a transistor, power consumption reduction of the circuit or high integration of the circuit can be achieved.

[0162] Note that a transistor may be formed using a certain substrate, and then the transistor may be transferred to another substrate and the transistor may be arranged on the other substrate. Examples of the substrate to which the transistor is transferred include, in addition to the substrate on which the above-described transistor can be formed, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (including natural fibers (silk, cotton, hemp), synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate, cupra, rayon, regenerated polyester), etc.), a leather substrate, or a rubber substrate. By using these substrates, it is possible to form a transistor with good characteristics, form a transistor with low power consumption, manufacture a device that is difficult to break, impart heat resistance, reduce weight, or reduce thickness.

[0163] ≪Transistor using polysilicon film≫ The structure of the transistor included in the liquid crystal display device according to one aspect of the present invention is not particularly limited. For example, it may be a planar type transistor or a staggered type transistor. ​​​​​​, it may be an inverse staggered type transistor. Also, it may be any of the transistor structures, such as a top gate type or a bottom gate type. Or, gate electrodes may be provided above and below the channel .

[0164] Also, since transistors using a polysilicon film have high field-effect mobility, they can be used to form various functional circuits, such as shift register circuits, level shifter circuits, buffer circuits, and sampling circuits.

[0165] ≪Insulating layer≫ As the insulating material that can be used for each insulating layer, overcoat, spacer, etc. of the liquid crystal display device, an organic insulating material or an inorganic insulating material can be used. Examples of the resin include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyamide-imide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, etc. Examples of the inorganic insulating layer include silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film, etc.

[0166] ≪Conductive layer≫ In addition to the gates, sources, and drains of the transistors, for the conductive layers such as various wirings and electrodes of the liquid crystal display device, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these can be used in a single-layer structure or a laminated structure. For example, aluminum A two-layer structure in which a titanium film is laminated on a film, a two-layer structure in which a titanium film is laminated on a tungsten film, A two-layer structure in which a copper film is laminated on a molybdenum film, on an alloy film containing molybdenum and tungsten A two-layer structure in which a copper film is laminated, a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film A titanium film or a titanium nitride film, and an aluminum film or a copper film is laminated on the titanium film or the titanium nitride film, and further a titanium film or a titanium nitride film is formed thereon, a three-layer structure A molybdenum film or a molybdenum nitride film, and an aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film, and further a molybdenum film or a molybdenum nitride film is formed thereon, a three-layer structure and the like. For example, when the conductive layer has a three-layer structure, in the first layer and the third layer, a film made of titanium, titanium nitride, molybdenum, tungsten, an alloy containing molybdenum and tungsten an alloy containing molybdenum and zirconium, or molybdenum nitride is formed, and in the second layer, a film made of a low-resistance material such as copper, aluminum, gold or silver, or an alloy of copper and manganese is preferably formed. In addition, a conductive material having translucency such as indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide indium tin oxide containing titanium oxide, indium zinc oxide, indium tin oxide added with silicon oxide may be used. It should be noted that the conductive layer may be formed by using a method for controlling the resistivity of the oxide semiconductor. The above-described configurations and methods shown in the present embodiment can be used in appropriate combination with the configurations and methods shown in other embodiments. The above, the configurations and methods shown in the present embodiment can be used in appropriate combination with the configurations and methods shown in other embodiments. The above, the configurations and methods shown in the present embodiment can be used in appropriate combination with the configurations and methods shown in other embodiments. The above, the configurations and methods shown in the present embodiment can be used in appropriate combination with the configurations and methods shown in other embodiments. .

[0167] In addition, the conductive layer may be formed by using a method for controlling the resistivity of the oxide semiconductor.

[0168] As described above, the configurations and methods shown in the present embodiment can be used in appropriate combination with the configurations and methods shown in other embodiments. can be used.

[0169] (Embodiment 2) In this embodiment, the configuration of the display device according to an aspect of the present invention will be described with reference to FIGS. 10 to 24.

[0170] FIG. 10 is a diagram for explaining the configuration of the display device according to an aspect of the present invention. FIG. 10(A) is a projection view of a pixel, FIG. 10(B) is an exploded perspective view for explaining a part of the configuration of the pixel shown in FIG. 10(A). FIG. 10(C) is a cross-sectional view taken along the cutting line Y1 - Y2 shown in FIG. 10(A) for explaining a part of the pixel configuration. FIG. 10(D) is a top view for explaining the pixel shown in FIG. 10(A).

[0171] FIG. 11 is a diagram for explaining the configuration of the display device according to an aspect of the present invention. FIG. 11(A) is a cross-sectional view of the pixel taken along the cutting line Y1 - Y2 shown in FIG. 10(A), and FIG. 11(B) is a cross-sectional view for explaining a part of the configuration of the pixel shown in FIG. 11(A).

[0172] FIG. 12 is a diagram for explaining the configuration of the display device according to an aspect of the present invention. FIG. 12(A) is a cross-sectional view of the pixel at a position corresponding to the cutting line Y1 - Y2 shown in FIG. 10(A), and FIG. 12(B) is a cross-sectional view for explaining a part of the configuration of the pixel shown in FIG. 12(A).

[0173] FIG. 13 is a diagram for explaining the configuration of the display device according to an aspect of the present invention. FIG. 13(A) is a cross-sectional view of the pixel at a position corresponding to the cutting line Y1 - Y2 shown in FIG. 10(A), and FIG. 13(B) is a cross-sectional view for explaining a part of the configuration of the pixel shown in FIG. 13(A).

[0174] FIG. 14 is a diagram for explaining the configuration of the display device according to an aspect of the present invention. FIG. 14(A) is a cross-sectional view of the pixel at a position corresponding to the cutting line Y1 - Y2 shown in FIG. 10(A), ​​​​​​​​​It is a cross-sectional view of a pixel at a position corresponding to the cutting line Y1 - Y2 shown in 0(A), and FIG. 14( B) is a cross-sectional view for explaining a part of the configuration of the pixel shown in FIG. 14(A).

[0175] FIG. 15 is a diagram for explaining the configuration of a display device according to an aspect of the present invention. FIG. 15(A) is a top view of the display device, and FIG. 15(B) is a top view for explaining a part of the pixel of the display device shown in FIG. 15(A). FIG. 15(C) is a schematic diagram for explaining the cross-sectional configuration of the display device shown in FIG. 15(A).

[0176] FIGS. 16 and 17 are cross-sectional views for explaining the configuration of the display device. FIG. 16(A) is a cross-sectional view at the cutting lines X1 - X2 and X3 - X4 of FIG. 15( A) and the cutting line X5 - X6 of FIG. 15(B), and FIGS. 16(B) and 16(C) are both diagrams for explaining a part of FIG. 16(A).

[0177] FIG. 17 is a diagram for explaining a cross-sectional view at the cutting lines X7 - X8 of FIG. 15(B) and X9 - X10 of FIG. 15(A).

[0178] FIG. 18 is a bottom view for explaining a part of the pixel that can be used in the display device shown in FIG. 15(A).

[0179] FIG. 19 is a circuit diagram for explaining the configuration of a pixel circuit included in a display device according to an aspect of the present invention.

[0180] In addition, in this specification, variables taking values of one or more integers may be used as symbols. For example, (p) including a variable p taking a value of one or more integers may be used as a part of a symbol for specifying any one of up to p components. Also, for example, a variable m taking a value of one or more integers ​​​​​​​And (m, n) including the variable n may be used as part of a code that identifies any one of up to m×n components. It may be used in some cases.

[0181] <Configuration Example 1 of Display Device.> The display device 700 described in this embodiment has pixels 702(i, j) (see Fig. 15( A)).

[0182] 《Configuration Example 1 of Pixel.》 The pixel 702(i, j) includes a functional layer 520, a first display element 750(i, j), and a second display element 550(i, j) (see Fig. 15(A)).

[0183] The functional layer 520 includes a pixel circuit 530(i, j), and the functional layer 520 has a region sandwiched between the first display element 75 0(i, j) and the second display element 550(i, j).

[0184] The pixel circuit 530(i, j) is electrically connected to the first display element 750(i, j) and the second display element 55 0(i, j).

[0185] 《Configuration Example 1 of First Display Element 750(i, j).》 The first display element 750(i, j) includes a first electrode 751(i, j), a second electrode 752, a layer 753 containing a liquid crystal material, and a reflective film 751B (see Figs. 10(B) and 11(B) for reference). Also, the first display element 750(i, j) has a function of controlling the intensity of the light reflected by the reflective film 751B .

[0186] The second electrode 752 is arranged so as to form an electric field in a direction intersecting the thickness direction of the layer 753 containing the liquid crystal material, between the first electrode 751(i, j) (see Figs. 10(B) and 11 (A) for reference). For example, a comb-shaped shape can be used for the second electrode 752. Furthermore, an electric field in a direction intersecting the thickness direction of the layer 753 containing the liquid crystal material can be formed between the first electrode 751( i,j). Alternatively, for example, a display element operating in the VA-IPS mode can be used as the first display element.

[0187] Note that the appearance in which the second electrode 752 having a comb-like shape is arranged in a matrix is shown in Fig. 22(B ).

[0188] The reflective film 751B has a shape that does not block the light emitted by the second display element 550(i,j). For example, a shape having a light non-blocking region 751H can be used for the reflective film 751B.

[0189] 《Configuration Example 1 of the Second Display Element 550(i,j).》 The second display element 550(i,j) has a function of emitting light, and the second display element 550(i ,j) is arranged so that the display using the second display element can be visually recognized in a part of the range where the display using the first display element 750(i,j) can be visually recognized (see Fig. 11(A)).

[0190] Thereby, using the first display element, the intensity of the light reflected by the reflective film can be controlled to perform display. Alternatively, using the second display element, the display using the first display element can be supplemented. As a result, a novel display device excellent in convenience or reliability can be provided.

[0191] 《Configuration Example 2 of the Pixel.》 In addition, the display device 700 described in the present embodiment has pixels 702(i,j) including optical elements 56 0 and coating films 565.

[0192] 《Configuration Example 1 of the Optical Element.》 ​​​​The optical element 560 has translucency, and the optical element 560 includes a first region 560A, a second region 56 0B, and a third region 560C (see FIGS. 10(B), 10(C), and 11(B)). See

[0193] The first region 560A includes a region where light is supplied. For example, the first region 560A is supplied with light from the second display element 550(i,j).

[0194] The second region 560B includes a region in contact with the coating film 565.

[0195] The third region 560C has a function of emitting a part of light, and the third region has an area equal to or less than the area of the region where light is supplied to the first region 560 A.

[0196] <<Configuration Example of Coating Film>> The coating film 565 has light reflectivity, and the coating film 565 has a function of reflecting a part of light and supplying it to the third region 560C. For example, the light emitted by the second display element 550(i,j) can be reflected toward the third region 560C. Specifically, as illustrated by the solid-line arrow , a part of the light incident on the optical element 560 from the first region 560A is reflected by the coating film 565 in contact with the second region 560B and can be emitted from the third region 560C (see FIG. 11(B)). See

[0197] <<Configuration Example 2 of First Display Element 750(i,j)>> The reflective film 751B has a shape that does not block the light emitted from the third region 560C.

[0198] Thereby, using the first display element, the intensity of the light reflected by the reflective film can be controlled to perform display . Alternatively, using the second display element, the display using the first display element can be supplemented Alternatively, the light supplied to the first region can be efficiently emitted from the third region. Alternatively, the light supplied to the first region can be collected and emitted from the third region. For example, when a light-emitting element is used for the second display element, the area of the light-emitting element can be set to be smaller than that of the third region. Alternatively, a light emitting element having an area larger than that of the third region may be provided. The light can be focused on the third region, or the third region can maintain the intensity of the light emitted. While the current density flowing through the light emitting element can be reduced, the reliability of the light emitting element can be improved. For example, an organic EL element or a light emitting diode can be used as the light emitting element. As a result, a novel display device with excellent convenience and reliability can be provided.

[0199] Pixel configuration example 3. In addition, the pixel 702(i,j) includes a part of the functional layer 520 and a first display element 750(i,j). ) and a second display element 550(i,j) (see FIG. 15(C)).

[0200] <Functional layer 520> The functional layer 520 includes a first conductive layer, a second conductive layer, an insulating film 501C, and a pixel circuit 530 (i , j). The functional layer 520 also includes an optical element 560 and a covering film 565 (FIG. 11 16(A) and 16(A). Note that the pixel circuit 530(i,j) is, for example, a transistor. Includes StaM.

[0201] The functional layer 520 includes a first display element 750(i,j) and a second display element 550(i,j). 16C). The first display element 750(i,j) and the area sandwiched between the first and second display elements 550(i,j) is less than 30 μm, preferably 1 It has a thickness of less than 0 μm, more preferably less than 5 μm.

[0202] As a result, the second display element 550(i,j) can be brought closer to the first display element 750(i,j). Or, the parallax generated between the display using the first display element 750(i,j) and the display using the second display element 550(i,j) can be reduced. Or the display using an adjacent pixel, for example, pixel 702(i,j + 1), can be made less likely to be disturbed by the display using the second display element 550(i,j). Or, the mixing of the display color using an adjacent pixel, for example, pixel 702(i,j + 1), and the display color using the second display element 550(i,j) can be made less likely to occur. Or, the attenuation of the light emitted by the second display element 550(i,j) can be suppressed. Or, the weight of the display device can be lightened. Or, the thickness of the display device can be reduced. Or, the display device can be made easier to bend.

[0203] Further, the functional layer 520 includes an insulating film 528, an insulating film 521A, an insulating film 521B, an insulating film 518 and an insulating film 516.

[0204] 《Pixel Circuit》 The pixel circuit 530(i,j) has a function of driving the first display element 750(i,j) and the second display element 550(i,j) (see FIG. 19).

[0205] As a result, for example, using a pixel circuit that can be formed using the same process, a first display element and a second display element that display using a method different from that of the first display element can be driven. Specifically, a reflective display element is used as the first display element to consume Power can be reduced. Or, an image can be displayed with high contrast in an environment where external light is bright. Or, using a second display element that emits light, an image can be displayed well in a dark environment. Or, using an insulating film, diffusion of impurities between the first display element and the second display element or between the first display element and the pixel circuit can be suppressed. As a result, a novel display device excellent in convenience or reliability can be provided. A switch, transistor, diode, resistive element, inductor, or capacitive element, etc. can be used for the pixel circuit 530(i,j). For example, one or a plurality of transistors can be used as the switch. Or, a plurality of transistors connected in parallel, a plurality of transistors connected in series, or a plurality of transistors connected in a combination of series and parallel can be used for one switch. For example, the pixel circuit 530(i,j) is electrically connected to the signal line S1(j), signal line S2(j), scanning line G1(i), scanning line G2(i), wiring CSCOM, and wiring ANO (see FIG. 19). Note that although not shown, the conductive layer 512A is electrically connected to the signal line S1(j). The pixel circuit 530(i,j) includes a switch SW1 and a capacitive element C11 (see FIG. 19).

[0206]

[0207]

[0208]

[0209]

[0210]

[0211] The pixel circuit 530(i,j) includes a switch SW2, a transistor M, and a capacitive element C12.For example, a transistor having a gate electrode electrically connected to the scanning line G1(i) and a first electrode electrically connected to the signal line S1(j) can be used for the switch SW1.

[0212] The capacitor element C11 has a first electrode electrically connected to the second electrode of the transistor used for the switch SW1 and a second electrode electrically connected to the wiring CSCOM.

[0213] For example, a transistor having a gate electrode electrically connected to the scanning line G2(i) and a first electrode electrically connected to the signal line S2(j) can be used for the switch SW2.

[0214] The transistor M has a gate electrode electrically connected to the second electrode of the transistor used for the switch SW2 and a first electrode electrically connected to the wiring ANO.

[0215] Note that a transistor including a conductive layer provided so as to sandwich a semiconductor film between the transistor and the gate electrode can be used for the transistor M. For example, a conductive layer electrically connected to a wiring that can supply the same potential as the gate electrode of the transistor M can be used as the conductive layer.

[0216] The capacitor element C12 has a first electrode electrically connected to the second electrode of the transistor used for the switch SW2 and a second electrode electrically connected to the first electrode of the transistor M.

[0217] Note that the first electrode of the first display element 750(i,j) is electrically connected to the second electrode of the transistor used for the switch SW1. Also, the second ​ Connect the electrode 752 of 2 to the wiring VCOM1 electrically. Thereby, the first display element 7 50 can be driven.

[0218] Also, connect the electrode 551(i,j) of the second display element 550(i,j) to the second electrode of the transistor M electrically, and connect the electrode 552 of the second display element 550(i,j) to the conductive layer VC OM2 electrically. Thereby, the second display element 550(i,j) can be driven as such.

[0219] 《Insulating film 501C》 The insulating film 501C includes a region sandwiched between the first conductive layer and the second conductive layer, and the insulating film 5 01C includes an opening 591A (see FIG. 17).

[0220] 《First conductive layer》 The first conductive layer is electrically connected to the first display element 750(i,j). Specifically, it is electrically connected to the first electrode 751(i,j) of the first display element 750(i,j). Note that the first electrode 751(i,j) can be used for the first conductive layer.

[0221] 《Second conductive layer》 The second conductive layer includes a region overlapping with the first conductive layer. The second conductive layer is electrically connected to the first conductive layer in the opening 591A. For example, the conductive layer 512B can be used for the second conductive layer as such.

[0222] By the way, the first conductive layer that is electrically connected to the second conductive layer in the opening 591A provided in the insulating film 501C can be called a through electrode.

[0223] The second conductive layer is electrically connected to the pixel circuit 530(i,j). For example, the pixel circuit The source electrode or drain electrode of the transistor used for the switch SW1 of 530(i, j) The conductive layer that functions as can be used for the second conductive layer.

[0224] 《Configuration Example 2 of the Second Display Element 550(i, j).》 Also, the second display element 550(i, j) is electrically connected to the pixel circuit 530(i, j) (see FIGS. 16(A) and 19). The second display element 550(i, j) has a function of emitting light toward the functional layer 52 0. The second display element 550(i, j) has, for example, a function of emitting light toward the insulating film 501C or an opening provided in the insulating film 501C . .

[0225] The second display element 550(i, j) is arranged such that the display using the second display element 550(i, j) can be visually recognized in a part of the range where the display using the first display element 750(i, j) can be visually recognized . For example, the direction in which external light is incident on and reflected by the first display element 750(i, j) that controls the intensity of reflected external light to display image information is shown in the figure using a dashed arrow (see FIG. 17). Also, the direction in which the second display element 550(i, j) emits light in a part of the range where the display using the first display element 750(i, j) can be visually recognized is shown in the figure using a solid arrow (see FIG. 16(A)). . . (see FIG. 16(A)).

[0226] Thereby, in a part of the region where the display using the first display element can be visually recognized , the display using the second display element can be visually recognized. Or, the user can visually recognize the display without changing the posture of the display device or the like. Or, the light reflected by the first display element is multiplied by the object color represented by the light reflected by the first display element and the light source color represented by the light emitted by the second display element . It is possible. Or, a pictorial display can be performed using the object color and the light source color. As a result a novel display device excellent in convenience or reliability can be provided.

[0227] For example, the second display element 550(i,j) includes an electrode 551(i,j), an electrode 552 and a layer 553(j) containing a light-emitting material (see Fig. 16(A)).

[0228] The electrode 552 includes a region overlapping the electrode 551(i,j).

[0229] The layer 553(j) containing a light-emitting material includes a region sandwiched between the electrode 551(i,j) and the electrode 552 and is provided.

[0230] The electrode 551(i,j) is electrically connected to the pixel circuit 530(i,j) at the connection portion 522. Note that the electrode 552 is electrically connected to the conductive layer VCOM2 (see Fig. 16( A) and Fig. 19).

[0231] 《Insulating films 521, 528, 518, 516, etc.》 The insulating film 521 includes a region sandwiched between the pixel circuit 530(i,j) and the second display element 550(i,j) and is provided.

[0232] For example, a laminated film can be used for the insulating film 521. For example, a laminated film of an insulating film 521A, an insulating film 521B, and an insulating film 521C can be used for the insulating film 521.

[0233] The insulating film 528 includes a region sandwiched between the insulating film 521 and the substrate 570, and has an opening in a region overlapping the second display element 550(i,j). Along the periphery of the electrode 551(i,j) The formed insulating film 528 prevents short - circuiting between the electrodes 551(i,j) and the electrode 552 .

[0234] Note that a single - layer film or a laminated film can be used for the insulating film 518. For example, the insulating film 51 8A and the insulating film 518B can be used for the insulating film 518. Or, for example, the insulating film 5 18A1 and the insulating film 518A2 can be used for the insulating film 518.

[0235] The insulating film 518 includes a region sandwiched between the insulating film 521 and the pixel circuit 530(i,j). .

[0236] The insulating film 516 includes a region sandwiched between the insulating film 518 and the pixel circuit 530(i,j). .

[0237] Also, the display device 700 can have an insulating film 501B. The insulating film 501B includes an opening 592B (see Fig. 16(A)).

[0238] The opening 592B includes a region overlapping with the conductive layer 511B.

[0239] <Configuration Example 2 of the Display Device.> Also, the display device 700 described in this embodiment has a display area 231 (see Fig. 15 ).

[0240] 《Display Area 231》 Although not shown in detail, the display area 231 includes a group of a plurality of pixels 702(i,1) to pixels 7 02(i,n) and another group of a plurality of pixels 702(1,j) to pixels 702(m,j), a scanning line G1(i), and a signal line S1(j). As an example, Fig. 15 shows a pixel 7 02(i,j). Also, a scanning line G2(i), a wiring CSCOM, and a wiring AN It has O and a signal line S2(j) (see FIGS. 15 and 19). Here, i is an integer of 1 or more and m is an integer as described below, j is an integer of 1 or more and n or less, and m and n are integers of 1 or more.

[0241] A plurality of pixels 702(i, 1) to 702(i, n) in a group include the pixel 702(i, j) and a plurality of pixels 702(i, 1) to 702(i, n) in a group are arranged in the row direction (the direction indicated by arrow R1 in the figure).

[0242] Another plurality of pixels 702(1, j) to 702(m, j) in a group include the pixel 702(i, j), and another plurality of pixels 702(1, j) to 702(m, j) in a group are arranged in the column direction (the direction indicated by arrow C1 in the figure) intersecting the row direction.

[0243] The scanning lines G1(i) and G2(i) are electrically connected to a plurality of pixels 70 2(i, 1) to 702(i, n) arranged in the row direction.

[0244] The signal lines S1(j) and S2(j) are electrically connected to another plurality of pixels 702(1, j) to 702(m, j) arranged in the column direction.

[0245] <Configuration Example 3 of the Display Device.> The display device 700 described in this embodiment can include a plurality of pixels that have a function of displaying colors with different hues. Or, using a plurality of pixels that can display colors with different hues, a color with a hue that cannot be displayed by each pixel can be displayed by additive color mixing.

[0246] In the case of using a plurality of pixels that can display colors with different hues for color mixing ​​​​​, each pixel can be rephrased as a sub-pixel. Also, a group of multiple sub-pixels can be rephrased as , a pixel. Specifically, pixel 702(i,j) can be rephrased as a sub-pixel, and pixel 702(i,j), pixel 702(i,j + 1), and pixel 702(i ,j + 2) can be grouped and rephrased as pixel 703(i,k) (see Fig. 22(A ). )

[0247] For example, a sub-pixel that displays blue, a sub-pixel that displays green, and a sub-pixel that displays red can be grouped and used for pixel 703(i,k).

[0248] Also, for example, a sub-pixel that displays cyan, a sub-pixel that displays magenta, and a sub-pixel that displays yellow can be grouped and used for pixel 703(i,k).

[0249] Also, for example, a sub-pixel that displays white, etc., can be added to the above group and used for a pixel.

[0250] Also, for example, a sub-pixel including a first display element 750(i,j) that displays cyan and a second display element 550(i,j) that displays blue, a sub-pixel including a first display element 75 0(i,j + 1) that displays yellow and a second display element 550(i,j + 1) that displays green, and a sub-pixel including a first display element 75 0(i,j + 2) that displays magenta and a second display element 550(i,j + 2) that displays red can be grouped and used for pixel 703(i,k). Thereby, the display using the first display element 750(i,j) to the first display element 75 0(i,j + 2) can be brightened. Or, the second display element 55 0(i,j + 2) can be used to brighten the display. Or, the second display element 55 0(i,j + 2) can be used to brighten the display. Or, the second display element 55 ​​​​The display using the 0(i,j) to the second display element 550(i,j+2) can be made vivid. This is possible.

[0251] <Configuration Example 4 of the Display Device.> In addition, the display device 700 described in this embodiment can include a driving circuit GD or a driving circuit SD (see Fig. 15(A)). This is possible (see Fig. 15(A)).

[0252] 《Driving Circuit GD》 The driving circuit GD has a function of supplying a selection signal based on control information.

[0253] For example, based on control information, it has a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more. Thereby, a moving image can be smoothly displayed. This is possible. This is possible.

[0254] For example, based on control information, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. Thereby, a still image can be displayed with flicker suppressed. This is possible. This is possible.

[0255] In addition, the display device can have a plurality of driving circuits. For example, the display device 700B has a driving circuit GDA and a driving circuit GDB (see Fig. 15). This is possible (see Fig. 15).

[0256] Also, for example, when a plurality of driving circuits are provided, the frequency at which the driving circuit GDA supplies a selection signal and the frequency at which the driving circuit GDB supplies a selection signal can be made different. Specifically, a selection signal can be supplied to another area for displaying a moving image at a frequency higher than the frequency of supplying a selection signal to one area for displaying a still image. Thereby, flicker in one area can be... This is possible. This is possible. This is possible. A still image can be displayed in a state where [a certain factor] is suppressed, and a moving image can be smoothly displayed in another area. This is possible.

[0257] 《Drive Circuit SD》 The drive circuit SD has, although not shown, a drive circuit SD1 and a drive circuit SD2. The drive circuit SD1 has a function of supplying an image signal based on information V11, and the drive circuit SD2 has a function of supplying an image signal based on information V12 (see Fig. 15).

[0258] Either the drive circuit SD1 or the drive circuit SD2 has a function of generating an image signal and a function of supplying the image signal to a pixel circuit electrically connected to a single display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, it is possible to drive a liquid crystal display element. This makes it possible, for example, to drive a liquid crystal display element. This is possible.

[0259] For example, various sequential circuits such as a shift register can be used for the drive circuit SD. This is possible.

[0260] For example, an integrated circuit in which the drive circuit SD1 and the drive circuit SD2 are integrated can be used for the drive circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used for the drive circuit SD. This is possible. This is possible.

[0261] For example, an integrated circuit can be mounted on a terminal using the COG (Chip on glass) method or the COF (Chip on Fi lm) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive layer. This is possible.

[0262] <Configuration Example 5 of the Display Device.> In addition, the display device 700 described in this embodiment includes a functional layer 720, a terminal 519B, and a substrate. 570, substrate 770, bonding layer 505, sealing material 705, structure KB1, functional film 770P, machine and includes a functional film 770D, etc. (see Fig. 16(A) or Fig. 17).

[0263] 《Functional layer 720》 In addition, the display device described in this embodiment has a functional layer 720. The functional layer 720 includes a region sandwiched between a substrate 770 and an insulating film 501C. The functional layer 720 has a light-shielding film BM , an insulating film 771, and a colored film CF1 (see Fig. 16(A) or Fig. 17).

[0264] The light-shielding film BM has an opening in a region overlapping with the first display element 750(i,j).

[0265] The colored film CF1 includes a region sandwiched between the substrate 770 and the first display element 750(i,j).

[0266] The insulating film 771 includes a region sandwiched between the colored film CF1 and a layer 753 containing a liquid crystal material or a region sandwiched between the light-shielding film BM and the layer 753 containing a liquid crystal material. Thereby, unevenness based on the thickness of the colored film CF1 can be flattened. Or, diffusion of impurities from the light-shielding film BM or the colored film CF1, etc. to the layer 753 containing a liquid crystal material can be suppressed.

[0267] A single-layer or laminated film can be used for the insulating film 771. For example, the insulating film 771A and the insulating film 771B can be used for the insulating film 771.

[0268] 《Terminal 519B》 In addition, the display device described in this embodiment has a terminal 519B (see Fig. 16(A)).

[0269] The terminal 519B includes a conductive layer 511B. The terminal 519B is, for example, a signal line S1(j​​​​​​​ ) is electrically connected.

[0270] 《Substrate 570, Substrate 770》 Further, the display device described in this embodiment includes a substrate 570 and a substrate 770.

[0271] The substrate 770 includes a region that overlaps with the substrate 570. The substrate 770 is located between the substrate 570 and includes a region that sandwiches the functional layer 520.

[0272] The substrate 770 includes a region that overlaps with the first display element 750(i,j). For example, a material with reduced birefringence can be used in this region.

[0273] 《Bonding layer 505, Sealing material 705, Structure KB1》 Further, the display device described in this embodiment includes a bonding layer 505, a sealing material 705, and a structure K B1.

[0274] The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570, and has the function of bonding the functional layer 52 0 and the substrate 570.

[0275] The sealing material 705 includes a region sandwiched between the functional layer 520 and the substrate 770, and has the function of bonding the functional layer 52 0 and the substrate 770.

[0276] The structure KB1 has the function of providing a predetermined gap between the functional layer 520 and the substrate 770 .

[0277] 《Functional film 770PA, Functional film 770PB, Functional film 770D, etc.》 Further, the display device described in this embodiment includes a functional film 770PA, a functional film 770PB, and a functional film 770D.

[0278] The functional film 770PA and the functional film 770PB include an area that overlaps with the first display element 750(i,j).

[0279] The functional film 770D includes an area that overlaps with the first display element 750(i,j). The functional film 7 70D is disposed so as to sandwich the substrate 770 between itself and the first display element 750(i,j). Thereby, for example, the light reflected by the first display element 750(i,j) can be diffused.

[0280] <Example of components> The display device 700 includes a substrate 570, a substrate 770, a structure KB1, a sealing material 705, or a bonding layer 505.

[0281] Further, the display device 700 includes a functional layer 520, an optical element 560, a coating film 565, an insulating film 52 1 or an insulating film 528.

[0282] Further, the display device 700 includes a signal line S1(j), a signal line S2(j), a scanning line G1(i), a scanning line G2(i), a wiring CSCOM, or a wiring ANO.

[0283] Further, the display device 700 includes a first conductive layer or a second conductive layer.

[0284] Further, the display device 700 includes a terminal 519B or a conductive layer 511B.

[0285] Further, the display device 700 includes a pixel circuit 530(i,j) or a switch SW1.

[0286] Further, the display device 700 includes a first display element 750(i,j), a first electrode 751(i, j), a reflective film, an opening, a layer 753 including a liquid crystal material, or a second electrode 752.

[0287] ​​In addition, the display device 700 includes an alignment film AF1, an alignment film AF2, a color filter CF1, a light-shielding film BM, an insulating film 771, a functional film 770P, or a functional film 770D.

[0288] In addition, the display device 700 includes a second display element 550(i,j), an electrode 551(i,j), an electrode 552, or a layer 553(j) containing a light-emitting material.

[0289] In addition, the display device 700 includes an insulating film 501B or an insulating film 501C.

[0290] In addition, the display device 700 includes a driving circuit GD or a driving circuit SD.

[0291] 《Substrate 570》 Materials having heat resistance enough to withstand heat treatment during the manufacturing process can be used for the substrate 570 and the like. For example, materials with a thickness of 0.7 mm or less and 0.1 mm or more can be used for the substrate 570. Specifically, materials polished to a thickness of about 0.1 mm can be used.

[0292] For example, glass substrates with large areas such as the 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 220 0 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 280 0 mm), and 10th generation (2950 mm × 3400 mm) can be used for the substrate 570 and the like. As a result, large-sized display devices can be manufactured. .

[0293] Composite materials such as organic materials, inorganic materials, or a combination of organic and inorganic materials can be used for the substrate 570 and the like. For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 570 and the like.

[0294] Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically strengthened glass, quartz, sapphire, etc. can be used for the substrate 57 0, etc. Specifically, an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film, etc. can be used for the substrate 570, etc. For example, a silicon oxide film, a silicon nitride film , a silicon oxynitride film, an aluminum oxide film, etc. can be used for the substrate 570, etc. Stainless steel or aluminum, etc. can be used for the substrate 570, etc.

[0295] For example, a single-crystalline semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. can be used for the substrate 570, etc. Thereby, a semiconductor element can be formed on the substrate 570, etc.

[0296] For example, an organic material such as resin, resin film, or plastic can be used for the substrate 570, etc. Specifically, a resin film or resin plate such as polyester, polyolefin, polyamide, polyimide, poly carbonate, or acrylic resin can be used for the substrate 570, etc. can be used.

[0297] For example, a composite material obtained by laminating a metal plate, a thin glass plate, or a film of an inorganic material, etc. on a resin film, etc. can be used for the substrate 570, etc. For example, a composite material in which fibrous or particulate metal, gla ss, or inorganic material, etc. is dispersed in a resin film can be used for the substrate 570, etc. can be used. For example, a composite material in which fibrous or particulate resin or organic material, etc. is dispersed in an inorganic material can be used for the substrate 570, etc.

[0298] In addition, a single-layer material or a material formed by laminating a plurality of layers can be used for a substrate 570 or the like. For example, a material in which an insulating film or the like that prevents diffusion of impurities contained in the base material is laminated on the base material can be used for the substrate 570 or the like. Specifically, a material in which one or a plurality of films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like that prevents diffusion of impurities contained in glass can be used for the substrate 570 or the like. Or, a material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents diffusion of impurities that permeate through the resin is laminated can be used for the substrate 570 or the like. Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or acrylic resin, a resin plate, or a laminated material can be used for the substrate 570 or the like. Specifically, a material containing a resin having a siloxane bond such as polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or silicone can be used for the substrate 570 or the like. Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, or the like can be used for the substrate 570 or the like. Or, a cycloolefin polymer (COP), a cycloolefin copolymer (COC), or the like can be used.

[0299] In addition, paper, wood, or the like can be used for the substrate 570 or the like.

[0300]

[0301]

[0302]

[0303] ​​​​​​​​​​​ For example, a flexible substrate can be used for the substrate 570 or the like.

[0304] In addition, a method of directly forming a transistor, a capacitive element, or the like on the substrate can be used. Also, for example, a transistor or a capacitive element or the like is formed on a substrate for a process having heat resistance against the heat applied during the manufacturing process, and the formed transistor or capacitive element or the like is transferred to the substrate 570 or the like. The method can be used. Thereby, for example, a transistor or a capacitive element or the like can be formed on a flexible substrate.

[0305] 《Substrate 770》 For example, materials that can be used for the substrate 570 can be used for the substrate 770. For example, a light-transmissive material selected from the materials that can be used for the substrate 570 can be used for the substrate 7 70. Alternatively, a material having an antireflection film formed, for example, with a thickness of 1 μm or less on one surface can be used for the substrate 770. Specifically, a material in which three or more layers, preferably five or more layers, more preferably 15 or more layers of a dielectric are laminated can be used for the substrate 770. Thereby, the reflectance can be suppressed to 0.5% or less, preferably 0.08% or less. Alternatively, a material with suppressed birefringence selected from the materials that can be used for the substrate 570 can be used for the substrate 770. For example, aluminosilicate glass, tempered glass, chemically strengthened glass, sapphire, or the like can be suitably used for the substrate 770 disposed on the side closer to the user of the display device. Thereby,

[0306] damage or scratches to the display device during use can be prevented.

[0307] ​​​For example, resin films such as cycloolefin polymer (COP), cycloolefin copolymer (COC ), and triacetyl cellulose (TAC) can be suitably used for the substrate 770 . As a result, the weight can be reduced. Or, for example, the frequency of occurrence of damage such as breakage due to dropping can be reduced.

[0308] Also, for example, a material with a thickness of 0.7 mm or less and 0.1 mm or more can be used for the substrate 770 . Specifically, a substrate polished to reduce the thickness can be used. By doing so , the functional film 770D can be arranged closer to the first display element 750(i,j) . As a result, image blurring can be reduced and the image can be displayed clearly.

[0309] 《Structural body KB1》 For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structural body KB1 etc . By doing so, a predetermined interval can be provided between the configurations sandwiching the structural body KB1 etc .

[0310] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate , polysiloxane, acrylic resin, etc., or a composite material of a plurality of resins selected from these can be used for the structural body KB1 . Also, it may be formed using a photosensitive material .

[0311] 《Sealing material 705》 An inorganic material, an organic material, a composite material of an inorganic material and an organic material, etc. can be used for the sealing material 705 etc .

[0312] For example, an organic material such as a heat - fusible resin or a curable resin can be used for the sealing material 705 etc .

[0313] For example, reaction-curing adhesives, photo-curing adhesives, heat-curing adhesives, or / and anaerobic adhesives and the like of organic materials can be used for the encapsulant 705 and the like.

[0314] Specifically, adhesives containing epoxy resins, acrylic resins, silicone resins, phenolic resins, polyim de resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl buty ral) resins, EVA (ethylene vinyl acetate) resins, etc. can be used for the encapsulant 705 and the like.

[0315] 《Bonding layer 505》 For example, materials that can be used for the encapsulant 705 can be used for the bonding layer 505.

[0316] 《Insulating film 521》 For example, insulating inorganic materials, insulating organic materials, or insulating composites containing inorganic and organic materials can be used for the insulating film 521 and the like.

[0317] Specifically, inorganic oxide films, inorganic nitride films, inorganic oxynitride films, etc., or laminated materials formed by laminating a plurality selected from these can be used for the insulating film 521 and the like. For example, silicon oxide films, silicon nitride films, silicon oxynitride films, aluminum oxide films, etc., or films containing laminated materials formed by laminating a plurality selected from these can be used for the insulating film 521 and the like.

[0318] Specifically, polyesters, polyolefins, polyamides, polyimides, polycarbonates, polysiloxanes, acrylic resins, etc., or laminated materials or composite materials formed by laminating a plurality of resins selected from these can also be used for the insulating film 521 and the like. Also, those having photosensitivity ​It may be formed using the material to be used.

[0319] This enables planarization of steps resulting from various structures overlapping, for example, with the insulating film 521. This can be achieved.

[0320] 《Optical element 560》 The optical element 560 includes an optical axis Z (see FIG. 10(C)). The optical axis Z passes through the center of the region where visible light is supplied in the first region 560A and the center of the third region 560C. Also, the second region 560B includes an inclined portion having an inclination θ of 45° or more, preferably 75° or more and 8 5° or less, with respect to a plane orthogonal to the optical axis Z. For example, the illustrated second region 560B has an inclination of approximately 60° overall with respect to a plane orthogonal to the optical axis Z.

[0321] Also, the second region 560B provides the inclined portion in the range of 0.05 μm or more and 0.2 μm or less from the end of the region where visible light is supplied in the first region 560A. When the second display element 550(i,j) is in contact with the first region 560 A, the region where visible light is supplied in the first region 560A is equal to the area of the region that can supply visible light of the second display element 550(i,j). For example, the inclined portion of the illustrated second region 560B is at a distance d from the end of the region where visible light is supplied in the first region 56 0A. Also, the region where visible light is supplied in the first region 560A has an area larger than 10% of the area of the pixel 702(i,j) (see FIG. 10(D)).

[0322]

[0323] The third region 560C has an area of 10% or less of the area of the pixel 702(i,j).

[0324] The reflective film 751B has an area of 70% or more of the area of the pixel 702(i,j).

[0325] The sum of the area of the region where the visible light of the first region 560A is supplied and the area of the reflective film 751B is greater than the area of the pixel 702(i,j).

[0326] For example, a rectangular pixel with a horizontal length of 27 μm and a vertical length of 81 μm has an area of 2187 μm 2 . The first region 560A supplies visible light to an area of 324 μm 2 . Also, the third region 560C has an area of 81 μm 2 , and the reflective film 751B has an area of 1894 μm 2 .

[0327] In this configuration, the area of the region where the visible light of the first region 560A is supplied corresponds to approximately 14.8% of the area of the pixel.

[0328] The area of the reflective film 751B corresponds to approximately 86.6% of the area of the pixel.

[0329] The sum of the area of the region where the visible light of the first region 560A is supplied and the area of the reflective film 751B is 2218 μm 2 .

[0330] Thereby, the second region can collect light incident on the first region at various angles. As a result, a novel display device with excellent convenience or reliability can be provided. .

[0331] Note that a plurality of materials can be used for the optical element 560. For example, a plurality of materials selected so that the difference in refractive index is in the range of 0. 2 or less can be used for the optical element 560. Thereby, reflection or scattering inside the optical element can be suppressed. Or, light​​ Loss can be suppressed.

[0332] Moreover, various shapes can be used for the optical element 560. For example, a circle or a polygon can be used as the shape of a cross-sectional plane perpendicular to the optical axis of the optical element 560. Alternatively, a plane or a curved surface can be used for the second region 560B of the optical element 560.

[0333] For example, a cross-sectional view along the optical axis of the optical element 560 using a quadrilateral as the shape of a cross-sectional plane perpendicular to the optical axis is shown in Fig. 23(A-1), Fig. 23(B-1) or Fig. 23(C-1). Also, its perspective view is shown in Fig. 23(A-2), Fig. 23(B-2) or Fig. 23(C-2).

[0334] For example, a cross-sectional view along the optical axis of the optical element 560 using a circular shape as the shape of a cross-sectional plane perpendicular to the optical axis is shown in Fig. 23(D-1), Fig. 23(E-1) or Fig. 23(F-1). Also, its oblique view is shown in Fig. 23(D-2), Fig. 23(E-2) or Fig. 23(F-2).

[0335] 《Coating film 565》 A single-layer film or a laminated film can be used for the coating film 565. For example, a material obtained by laminating a film having light-transmitting properties and a film having reflective properties can be used for the coating film 565.

[0336] For example, inorganic materials such as oxide films, fluoride films, and sulfide films can be used as the film having light-transmitting properties and used.

[0337] For example, metals can be used for the film having reflective properties. Specifically, a material containing silver can be used for the coating film 565. For example, a material containing silver and palladium or the like or a material containing silver and copper or the like can be used for the reflective film. Also, a dielectric multilayer film has reflective properties It can be used as a film.

[0338] 《Insulating Film 528》 For example, the materials that can be used for the insulating film 521 can also be used for the insulating film 528, etc. Specifically, a film containing polyimide with a thickness of 1 μm can be used for the insulating film 528.

[0339] 《Insulating Film 501B》 For example, the materials that can be used for the insulating film 521 can also be used for the insulating film 501B. Also, for example, a material having a function of supplying hydrogen can be used for the insulating film 501B. can be used.

[0340] Specifically, a material obtained by laminating a material containing silicon and oxygen and a material containing silicon and nitrogen can be used for the insulating film 501B. For example, a material that releases hydrogen by heating or the like and has a function of supplying the released hydrogen to other components can be used for the insulating film 501B. Specifically, a material that releases hydrogen by heating or the like and has a function of supplying the released hydrogen to other components can be used for the insulating film 501B. and supplies the released hydrogen to other components can be used for the insulating film 501B. Specifically, a material that releases the hydrogen taken in during the manufacturing process by heating or the like and has a function of supplying it to other components can be used for the insulating film 501B. can be used for the insulating film 501B.

[0341] For example, a film containing silicon and oxygen formed by chemical vapor deposition using silane or the like as a source gas can be used for the insulating film 501B. can be used for the insulating film 501B.

[0342] Specifically, a material obtained by laminating a material containing silicon and oxygen with a thickness of 200 nm or more and 600 nm or less and a material containing silicon and nitrogen with a thickness of about 200 nm can be used for the insulating film 501B. and a material containing silicon and nitrogen with a thickness of about 200 nm can be used for the insulating film 501B. can be used.

[0343] 《Insulating Film 501C》 For example, the materials that can be used for the insulating film 521 can also be used for the insulating film 501C. . Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. This can suppress the diffusion of impurities into the pixel circuit or the second display element or the like.

[0344] For example, a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used for the insulating film 501C. This is possible.

[0345] 《Wiring, Terminals, Conductive Layers》 A material having conductivity can be used for wiring or the like. Specifically, a material having conductivity can be , signal line S1(j), signal line S2(j), scanning line G1(i), scanning line G2(i), wiring C SCOM, wiring ANO, terminal 519B, or conductive layer 511B or the like.

[0346] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic or the like can be used for wiring or the like. This is possible.

[0347] Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese or the like can be used for wiring or the like. Or, an alloy containing the above-described metal element or the like can be used for wiring or the like. In particular, an alloy of copper and manganese is suitable for microfabrication using the wet etching method. Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is laminated on the titanium film and a titanium film is further formed thereon. This is suitable for microfabrication using the wet etching method.

[0348] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is laminated on the titanium film and a titanium film is further formed thereon. a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is laminated on the titanium film and a titanium film is further formed thereon. can be used for wiring and the like.

[0349] Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide and zinc oxide added with gallium can be used for wiring and the like.

[0350] Specifically, a film containing graphene or graphite can be used for wiring and the like.

[0351] For example, a film containing graphene oxide is formed, and by reducing the film containing graphene oxide a film containing graphene can be formed. Examples of the reduction method include applying heat and using a reducing agent.

[0352] For example, a film containing metal nanowires can be used for wiring and the like. Specifically, silver nanowires can be used.

[0353] Specifically, conductive polymers can be used for wiring and the like.

[0354] Note that, for example, using the conductive material ACF1, the terminal 519B and the flexible printed circuit board FPC1 can be electrically connected.

[0355] 《First Conductive Layer, Second Conductive Layer》 For example, the materials that can be used for wiring and the like can be used for the first conductive layer or the second conductive layer.

[0356] Also, the first electrode 751(i,j) or wiring and the like can be used for the first conductive layer.

[0357] Also, the source electrode or drain electrode of the transistor that can be used for the switch SW1 ​A conductive layer 512B or wiring that functions as an electrode can be used for the second conductive layer.

[0358] 《First display element 750(i,j)》 For example, a display element having a function of controlling light reflection or transmission can be used as the first display element 750( i,j). For example, a configuration combining a liquid crystal element and a polarizing plate or a MEMS display element of a shutter method, a MEMS display element of an optical interference method, etc. can be used. By using a reflective display element, the power consumption of the display device can be suppressed. For example, a display element using a microcapsule method, an electrophoresis method, an electro-wetting method, etc. can be used as the first display element 750(i,j). Specifically, a reflective liquid crystal display element can be used as the first display element 750(i,j).

[0359] For example, a liquid crystal element driven by using a driving method such as an IPS (In-Plane-Switching) mode, a TN (Twisted Nematic) mode, an FFS (Fringe Field Switching) mode, an ASM (Axially Symmetric aligned Micro o-cell) mode, an OCB (Optically Compensated Birefringence) mode, an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric Liquid Crystal) mode, etc. can be used.

[0360]

[0360] Also, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain n Vertical Alignment mode, PVA (Patterned V ertical Alignment mode, ECB (Electrically C ontrolled Birefringence) mode, CPA (Continuo us Pinwheel Alignment) mode, ASV (Advanced S uper-View) mode, etc., can be used to drive a liquid crystal element that can be used.

[0361] The first display element 750(i,j) has a first electrode, a second electrode, and a layer containing a liquid crystal material. The layer containing the liquid crystal material contains a liquid crystal material whose alignment can be controlled using the voltage between the first electrode and the second electrode. For example, in the thickness direction (also referred to as the vertical direction) of the layer containing the liquid crystal material, the electric field in the direction intersecting the vertical direction (also referred to as the horizontal direction or the diagonal direction) can be used as the electric field for controlling the alignment of the liquid crystal material. ) The electric field in the direction intersecting the vertical direction (also referred to as the horizontal direction or the diagonal direction) can be used as the electric field for controlling the alignment of the liquid crystal material. can be used.

[0362] 《Layer 753 Containing Liquid Crystal Material》 For example, thermotropic liquid crystals, low-molecular liquid crystals, high-molecular liquid crystals, polymer-dispersed liquid crystals, ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. can be used in the layer containing the liquid crystal material. Or, liquid crystal materials showing a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, etc. can be used. Or, liquid crystal materials showing a blue phase can be used.

[0363] For example, a negative-type liquid crystal material can be used in the layer containing the liquid crystal material.

[0364] For example, 1.0×10 13 Ω·cm or more, preferably 1.0×10 14 Ω·cm or more, More preferably, a liquid crystal material having a resistivity of 1.0×10 15 Ω·cm or more is used for the layer 753 containing the liquid crystal material . Thereby, the variation in the transmittance of the first display element 750(i,j) can be suppressed. Or, the shaking of the first display element 750(i,j) can be suppressed . Or, the frequency of rewriting the first display element 750(i,j) can be reduced .

[0365] 《The first electrode 751(i,j)》 For example, the material used for wiring or the like can be used for the first electrode 751(i,j). Specifically , a reflective film can be used for the first electrode 751(i,j). For example, a material laminated with a conductive layer having light transmittance and a reflective film having an opening can be used for the first electrode 751(i,j ).

[0366] 《Reflective film》 For example, a material that reflects visible light can be used for the reflective film. Specifically, a material containing silver can be used for the reflective film. For example, a material containing silver and palladium or a material containing silver and copper can be used for the reflective film.

[0367] The reflective film reflects, for example, the light passing through the layer 753 containing the liquid crystal material. Thereby , the first display element 750 can be made into a reflective liquid crystal element. Also, for example, a material having irregularities on the surface can be used for the reflective film. Thereby, the incident light can be reflected in various directions to achieve white display.

[0368] For example, the first conductive layer or the first electrode 751(i,j) or the like can be used for the reflective film .

[0369] ​​For example, a film having a region sandwiching a light-transmissive conductive layer 751A between the layer 753 containing a liquid crystal material can be used for the reflective film 751B (see Fig. 20(A)). For example, a film having a region sandwiched between the layer 753 containing a liquid crystal material and the light-transmissive conductive layer 751C can be used for the reflective film 751B (see Fig. 20(B)).

[0370] For example, a film having a region sandwiched between the layer 753 containing a liquid crystal material and the light-transmissive conductive layer 751C can be used for the reflective film 751B (see Fig. 20(B)). For example, a film having a region sandwiched between the layer 753 containing a liquid crystal material and the light-transmissive conductive layer 751C can be used for the reflective film 751B (see Fig. 20(B)).

[0371] For example, a film having a region sandwiched between the light-transmissive conductive layer 751A and the light-transmissive conductive layer 751C can be used for the reflective film 751B (see Fig. 20(C)). For example, a film having a region sandwiched between the light-transmissive conductive layer 751A and the light-transmissive conductive layer 751C can be used for the reflective film 751B (see Fig. 20(C)).

[0372] For example, a film having reflectivity to visible light may be used for the first electrode 751(i,j) (see Fig. 20(D)). For example, a film having reflectivity to visible light may be used for the first electrode 751(i,j) (see Fig. 20(D)).

[0373] The reflective film has a shape in which a region 751H that does not block the light emitted by the second display element 550(i,j) is formed (see Figs. 21(A) to 21(C)). The reflective film has a shape in which a region 751H that does not block the light emitted by the second display element 550(i,j) is formed (see Figs. 21(A) to 21(C)).

[0374] For example, a shape having one or more openings can be used for the reflective film. Specifically, shapes such as a polygon, a quadrilateral, an ellipse, a circle, or a cross can be used for the region 751H. Also, shapes such as a long streak shape, a slit shape, or a checkered pattern shape can be used for the region 751H. For example, a shape having one or more openings can be used for the reflective film. Specifically, shapes such as a polygon, a quadrilateral, an ellipse, a circle, or a cross can be used for the region 751H. Also, shapes such as a long streak shape, a slit shape, or a checkered pattern shape can be used for the region 751H. For example, a shape having one or more openings can be used for the reflective film. Specifically, shapes such as a polygon, a quadrilateral, an ellipse, a circle, or a cross can be used for the region 751H. Also, shapes such as a long streak shape, a slit shape, or a checkered pattern shape can be used for the region 751H. For example, a shape having one or more openings can be used for the reflective film. Specifically, shapes such as a polygon, a quadrilateral, an ellipse, a circle, or a cross can be used for the region 751H. Also, shapes such as a long streak shape, a slit shape, or a checkered pattern shape can be used for the region 751H.

[0375] If the value of the ratio of the total area of the region 751H to the total area of the reflective film is too large, the display using the first display element 750(i,j) will become dark. If the value of the ratio of the total area of the region 751H to the total area of the reflective film is too large, the display using the first display element 750(i,j) will become dark.

[0376] Also, if the value of the ratio of the total area of the region 751H to the total area of the reflective film is too small, the second The display using the element 550(i,j) may become dark. Or, the reliability of the second display element 55 0(i,j) may be impaired.

[0377] For example, the region 751H provided in the pixel 702(i,j+1) is not disposed on a straight line extending in the row direction (the direction indicated by the arrow R1 in the figure) passing through the region 751H provided in the pixel 702(i,j ). Or, for example, the region 751H provided in the pixel 702(i+1,j) is not disposed on a straight line extending in the column direction (the direction indicated by the arrow C1 in the figure) passing through the region 751H provided in the pixel 702(i,j ). (See FIG. 21(A)). Or, for example, the region 751H provided in the pixel 702(i+1,j) is not disposed on a straight line extending in the column direction (the direction indicated by the arrow C1 in the figure) passing through the region 751H provided in the pixel 702(i,j ). (See FIG. 21(B)). (See FIG. 21(B)).

[0378] For example, the region 751H provided in the pixel 702(i,j+2) is disposed on a straight line extending in the row direction passing through the region 751H provided in the pixel 702(i,j ). (See FIG. 21(A)). Also, the region 751H provided in the pixel 702(i,j+1) is disposed on a straight line orthogonal to the straight line between the region 751H provided in the pixel 702(i, j) and the region 751H provided in the pixel 702(i,j+2). j) and the region 751H provided in the pixel 702(i,j+2). (See FIG. 21(A)). Also, the region 751H provided in the pixel 702(i,j+1) is disposed on a straight line orthogonal to the straight line between the region 751H provided in the pixel 702(i,

[0379] Or, for example, the region 751H provided in the pixel 702(i+2,j) is disposed on a straight line extending in the column direction passing through the region 751H provided in the pixel 702( i,j). (See FIG. 21 (B)). Also, for example, the region 751H provided in the pixel 702(i+1,j) is disposed on a straight line orthogonal to the straight line between the region 751H provided in the pixel 702(i,j) and the region 751H provided in the pixel 702(i+2,j ). (See FIG. 21(B)).

[0380] Disposing the second display element so as to overlap with the region that does not block the light arranged in this way can separate the second elements of other pixels adjacent to one pixel from the second display element of one pixel far away. Alternatively, a display element that displays a color different from the color displayed by the second display element of one pixel can be disposed on the second display element of another pixel adjacent to one pixel . Alternatively, the difficulty that occurs when a plurality of display elements that display different colors are disposed adjacent to each other can be reduced . As a result, a novel display device excellent in convenience or reliability can be provided .

[0381] Alternatively, a shape in which the end portion is cut short so that the region 751H is formed can be used for the reflective film (see FIG. 21(C)). Specifically, a shape in which the end portion is cut so that the column direction (the direction indicated by the arrow C1 in the figure ) becomes short can be used .

[0382] 《Second electrode 752》 For example, materials that can be used for wiring or the like can be used for the second electrode 752 . For example, a light-transmitting material selected from materials that can be used for wiring or the like can be used for the second electrode 752

[0383] For example, a conductive oxide, a thin metal film or metal nanowire that is thin enough for light to pass through, etc. can be used for the second electrode 752

[0384] Specifically, a conductive oxide containing indium can be used for the second electrode 752 . Alternatively, a metal thin film with a thickness of 1 nm or more and 10 nm or less can be used for the second electrode 752 . Also, metal nanowires containing silver can be used for the second electrode 752

[0385] ​ Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide , zinc oxide added with gallium, zinc oxide added with aluminum, etc. can be used for the second electrode 7 52.

[0386] 《Alignment films AF1 and AF2》 For example, a material containing polyimide or the like can be used for the alignment film AF1 or the alignment film AF2 . Specifically, a material that has been rubbed so that the liquid crystal material is aligned in a predetermined direction or a material formed using an optical alignment technique can be used.

[0387] For example, a film containing soluble polyimide can be used for the alignment film AF1 or the alignment film AF2 . As a result, the temperature required for forming the alignment film AF1 or the alignment film AF2 can be lowered. As a result, the damage to other components during the formation of the alignment film AF1 or the alignment film AF2 can be reduced .

[0388] 《Colored film CF1》 A material that transmits light of a predetermined color can be used for the colored film CF1. As a result, the colored film CF1 can be used, for example, for a color filter.

[0389] For example, a material that transmits blue light, a material that transmits green light, or a material that transmits red light can be used for the colored film CF1. As a result, the spectrum width of the light transmitted through the colored film CF1 can be narrowed, and the display can be made vivid . .

[0390] Also, for example, a material that absorbs blue light, a material that absorbs green light, or a material that absorbs red light can be used for the colored film CF1. Specifically, a material that transmits yellow light can be used. Materials, materials that transmit magenta light, or materials that transmit cyan light can be used for the color filter CF1. This can narrow the spectrum width of the light absorbed by the color filter CF1 and brighten the display.

[0391] 《Light-Shielding Film BM》 For example, materials that suppress light transmission can be used for the light-shielding film BM. As a result, the light-shielding film BM can be used for, for example, a black matrix.

[0392] Specifically, a resin containing a pigment or a dye can be used for the light-shielding film BM. For example, a resin in which carbon black is dispersed can be used for the light-shielding film.

[0393] Alternatively, an inorganic compound, an inorganic oxide, a composite oxide containing a solid solution of a plurality of inorganic oxides, etc. can be used for the light-shielding film BM. Specifically, a black chromium film, a film containing cupric oxide, a film containing copper chloride or a film containing tellurium chloride can be used for the light-shielding film BM.

[0394] 《Insulating Film 771》 For example, materials that can be used for the insulating film 521 can be used for the insulating film 771. For example, polyimide, epoxy resin, acrylic resin, etc. can be used for the insulating film 771. Alternatively, a film containing a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film or a laminated material in which a plurality selected from these are laminated can be used for the insulating film 771.

[0395] 《Functional Films 770P, 770D》 For example, an antireflection film, a polarizing film, a retardation film, a light diffusion film, or a condenser film, etc. can be used for the functional film 770P or the functional film 770D. ​​

[0396] Specifically, a film containing a dichroic dye can be used for the functional film 770P or the functional film 770D. Alternatively, a material having a columnar structure with an axis along a direction intersecting the surface of the substrate can be used for the functional film 770P or the functional film 770D. Thereby, light can be easily transmitted in the direction along the axis and easily scattered in other directions.

[0397] In addition, an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, etc. can be used for the functional film 770P.

[0398] Specifically, a circularly polarized film can be used for the functional film 770P. Also, a light diffusion film can be used for the functional film 770D.

[0399] 《Second display element 550(i,j)》 For example, a display element having a function of emitting light can be used for the second display element 550(i,j). Specifically, an organic electroluminescence element, an inorganic electroluminescence element, a light-emitting diode, or a QDLED (Quantum Dot LED), etc. can be used for the second display element 550(i,j).

[0400] For example, a light-emitting organic compound can be used for the layer 553(j) containing a light-emitting material.

[0401] For example, quantum dots can be used for the layer 553(j) containing a light-emitting material. Thereby, light having a narrow half-value width and vivid colors can be emitted.

[0402] For example, a laminated material laminated to emit blue light, a laminated material laminated to emit green light, or a laminated material laminated to emit red light, etc. can be used for the layer 553(j) containing a light-emitting material. A laminated material laminated to emit blue light, a laminated material laminated to emit green light, or a laminated material laminated to emit red light, etc. can be used for the layer 553(j) containing a light-emitting material. For example, a strip-shaped laminated material that is long in the column direction along the signal line S2(j) can be used for the layer 553(j) containing a light-emitting material.

[0403] For example, a strip-shaped laminated material that is long in the column direction along the signal line S2(j) can be used for the layer 553(j) containing a light-emitting material. For example, a strip-shaped laminated material that is long in the column direction along the signal line S2(j) can be used for the layer 553(j) containing a light-emitting material.

[0404] Also, for example, a laminated material laminated to emit white light can be used for the layer 553(j) containing a light-emitting material. Specifically, a layer containing a light-emitting material containing a fluorescent material that emits blue light and a layer containing a material other than the fluorescent materials that emit green and red light or a layer containing a material other than the fluorescent material that emits yellow light are laminated, and the laminated material can be used for the layer 553(j) containing a light-emitting material. Also, for example, a laminated material laminated to emit white light can be used for the layer 553(j) containing a light-emitting material. Specifically, a layer containing a light-emitting material containing a fluorescent material that emits blue light and a layer containing a material other than the fluorescent materials that emit green and red light or a layer containing a material other than the fluorescent material that emits yellow light are laminated, and the laminated material can be used for the layer 553(j) containing a light-emitting material. Also, for example, a laminated material laminated to emit white light can be used for the layer 553(j) containing a light-emitting material. Specifically, a layer containing a light-emitting material containing a fluorescent material that emits blue light and a layer containing a material other than the fluorescent materials that emit green and red light or a layer containing a material other than the fluorescent material that emits yellow light are laminated, and the laminated material can be used for the layer 553(j) containing a light-emitting material. Also, for example, a laminated material laminated to emit white light can be used for the layer 553(j) containing a light-emitting material. Specifically, a layer containing a light-emitting material containing a fluorescent material that emits blue light and a layer containing a material other than the fluorescent materials that emit green and red light or a layer containing a material other than the fluorescent material that emits yellow light are laminated, and the laminated material can be used for the layer 553(j) containing a light-emitting material. Also, for example, a laminated material laminated to emit white light can be used for the layer 553(j) containing a light-emitting material. Specifically, a layer containing a light-emitting material containing a fluorescent material that emits blue light and a layer containing a material other than the fluorescent materials that emit green and red light or a layer containing a material other than the fluorescent material that emits yellow light are laminated, and the laminated material can be used for the layer 553(j) containing a light-emitting material.

[0405] For example, a material that can be used for wiring or the like can be used for the electrode 551(i,j). For example, a material that can be used for wiring or the like can be used for the electrode 551(i,j).

[0406] For example, a material selected from materials that can be used for wiring or the like and that has translucency for visible light can be used for the electrode 551(i,j). For example, a material selected from materials that can be used for wiring or the like and that has translucency for visible light can be used for the electrode 551(i,j).

[0407] Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used for the electrode 551(i,j). Or, a thin metal film that allows light to pass through can be used for the electrode 551(i,j). Or, a part of the light is transmitted, and the other part of the light Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used for the electrode 551(i,j). Or, a thin metal film that allows light to pass through can be used for the electrode 551(i,j). Or, a part of the light is transmitted, and the other part of the light Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used for the electrode 551(i,j). Or, a thin metal film that allows light to pass through can be used for the electrode 551(i,j). Or, a part of the light is transmitted, and the other part of the light Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used for the electrode 551(i,j). Or, a thin metal film that allows light to pass through can be used for the electrode 551(i,j). Or, a part of the light is transmitted, and the other part of the light A metal film that reflects a part can be used for the electrode 551(i,j). Thereby, a minute resonator structure can be provided in the second display element 550(i,j). As a result, light of a predetermined wavelength can be extracted more efficiently than other light.

[0408] For example, a material that can be used for wiring or the like can be used for the electrode 552. Specifically speaking, a material having reflectivity for visible light can be used for the electrode 552.

[0409] 《Drive Circuit GD》 Various sequential circuits such as a shift register can be used for the drive circuit GD. For example , a transistor MD, a capacitive element, etc. can be used for the drive circuit GD. Specifically, a transistor that can be used for the switch SW1 or a semiconductor film that can be formed in the same process as the transistor M can be used.

[0410] For example, a configuration different from the transistor that can be used for the switch SW1 can be used for the transistor MD.

[0411] Note that the same configuration as the transistor M can be used for the transistor MD.

[0412] 《Transistor》 For example, a semiconductor film that can be formed in the same process can be used for the transistors of the drive circuit and the pixel circuit .

[0413] For example, a bottom-gate type transistor or a top-gate type transistor, etc. can be used for the transistor of the drive circuit or the transistor of the pixel circuit.

[0414] By the way, for example, a bottom-gate type transistor using amorphous silicon as a semiconductor manufacturing line can be easily modified into a manufacturing line for a bottom-gate type transistor using an oxide semiconductor as a semiconductor. Also, for example, a top-gate type manufacturing line using polysilicon as a semiconductor can be easily modified into a manufacturing line for a top-gate type transistor using an oxide semiconductor as a semiconductor. Both modifications can effectively utilize the existing manufacturing line. For example, a transistor using a semiconductor containing a Group 14 element as a semiconductor film can be utilized. Specifically, a semiconductor containing silicon can be used as the semiconductor film. For example, a transistor using single-crystalline silicon, polysilicon, microcrystalline silicon, amorphous silicon, or the like as the semiconductor film can be used.

[0415] In addition, the temperature required for fabricating a transistor using polysilicon as a semiconductor is lower than that for a transistor using single-crystalline silicon as a semiconductor. Also, the field-effect mobility of a transistor using polysilicon as a semiconductor is higher than that of a transistor using amorphous silicon as a semiconductor. As a result, the aperture ratio of the pixel can be improved. In addition, pixels provided with extremely high fineness and a gate drive circuit and a source drive circuit can be formed on the same substrate. As a result, the number of components constituting the electronic device can be reduced.

[0416] The reliability of a transistor using polysilicon as a semiconductor is superior to that of a transistor using amorphous silicon as a semiconductor.

[0417]

[0418]

[0419] ​​​​​​​​​ In addition, a transistor using a compound semiconductor can be used. Specifically, a semiconductor containing gallium arsenide can be used for the semiconductor film.

[0420] Also, a transistor using an organic semiconductor can be used. Specifically, poly acenes or an organic semiconductor containing graphene can be used for the semiconductor film.

[0421] For example, a transistor using an oxide semiconductor for the semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film. Note that an example of the oxide semiconductor will be described in detail in Embodiment Mode 4.

[0422] For example, a transistor in which the leakage current in the off state is smaller than that of a transistor using amorphous silicon for the semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for the semiconductor film can be used.

[0423] Thereby, the time during which the pixel circuit can hold the image signal can be made longer than that of a pixel circuit using a transistor with amorphous silicon for the semiconductor film. Specifically, while suppressing the occurrence of flicker, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. As a result, the fatigue accumulated by the user of the information processing apparatus having the above-described pixel circuit can be reduced. Also, the power consumption associated with driving can be reduced.

[0424] For example, it may include a semiconductor film 508, a conductive layer 504, a conductive layer 512A, and a conductive layer 512B. The transistor can be used for the switch SW1 (see Fig. 16(B)). Note that the insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive layer 504.

[0425] The conductive layer 504 includes a region overlapping with the semiconductor film 508. The conductive layer 504 has the function of a gate electrode. The insulating film 506 has the function of a gate insulating film.

[0426] The conductive layers 512A and 512B are electrically connected to the semiconductor film 508. The conductive layer 512A has either the function of a source electrode or the function of a drain electrode, and the conductive layer 512B has the other of the function of a source electrode or the function of a drain electrode.

[0427] Also, the transistor having the conductive layer 524 can be used for the transistor of the driving circuit or the pixel circuit (see Fig. 16(B)). The conductive layer 524 includes a region sandwiching the semiconductor film 508 between it and the conductive layer 504. Note that the insulating film 516 includes a region sandwiched between the conductive layer 524 and the semiconductor film 5 08. Also, for example, the conductive layer 524 can be electrically connected to a wiring that supplies the same potential as the conductive layer 504.

[0428] For example, a conductive layer formed by laminating a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper can be used for the conductive layer 504. Note that the copper-containing film includes a region sandwiching the tantalum-and-nitrogen-containing film between it and the insulating film 506.

[0429] For example, a 400-nm-thick film containing silicon and nitrogen and a film containing silicon, oxygen, and nitrogen A material obtained by laminating a film with a thickness of 200 nm can be used for the insulating film 506. Note that The film containing silicon and nitrogen has a region sandwiching a film containing silicon, oxygen and nitrogen, between the film and the semiconductor film 508. It is provided with a region sandwiching the film.

[0430] For example, a film with a thickness of 25 nm containing indium, gallium and zinc can be used for the semiconductor film 508. It can be used.

[0431] For example, a conductive layer formed by laminating a film with a thickness of 50 nm containing tungsten, a film with a thickness of 400 nm containing aluminum, and a film with a thickness of 100 nm containing titanium can be used for the conductive layer 512A or the conductive layer 512B. Note that the film containing tungsten has a region in contact with the semiconductor film 50 8. It is provided with a region in contact with the semiconductor film 508.

[0432] <Configuration Example 6 of the Display Device.> The configuration of the display device according to one aspect of the present invention will be described with reference to FIG. 12.

[0433] FIG. 12 is a diagram for explaining the configuration of the display device according to one aspect of the present invention. FIG. 12(A) is a cross-sectional view of a pixel at a position corresponding to the cut line Y1 - Y2 shown in FIG. 1 0(A), and FIG. 12( B) is a cross-sectional view for explaining a part of the configuration of the pixel shown in FIG. 12(A).

[0434] The configuration of the display device described in this configuration example has the same configuration as the display device 700 described with reference to FIG. 11, except that it includes the lens 580. Here, the different parts will be described in detail, and the above description will be incorporated by reference for the parts where the same configuration can be used. The display device described in this embodiment includes the lens 580, and the lens 580 is an optical element It is provided with.

[0435] The display device described in this embodiment includes the lens 580, and the lens 580 is an optical element 560 and the second display element 550(i,j) (FIG. 12(A) and See Figure 12(B)).

[0436] Lens 580 includes a material having a refractive index between 1.5 and 2.5, inclusive, and lens 580 is convex. It is a lens.

[0437] This allows the light emitted by the second display element to be condensed toward the optical axis of the optical element, for example. Alternatively, the light emitted from the second display element can be efficiently utilized. Alternatively, the density of the current flowing through the light-emitting element can be reduced. The area can be increased, or the reliability of the light-emitting element can be improved. For example, In addition, an organic EL element or a light emitting diode can be used as the light emitting element. It is therefore possible to provide a novel display device having excellent performance and reliability.

[0438] For example, a plano-convex lens can be used for lens 580.

[0439] "Lens 580" A plano-convex or bi-convex lens can be used for lens 580 .

[0440] A material that transmits light can be used for the lens 580. Materials with a refractive index below can be used for the lens 580. For example, inorganic materials or An organic material can be used for the lens 580 .

[0441] For example, materials including oxides or sulfides may be used for lens 580 .

[0442] Specifically, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, Niobium, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, indium, and tin are used for the lens 580, such as an oxide containing indium and gallium and zinc, or an oxide containing indium and gallium and zinc. Alternatively, zinc sulfide or the like can be used for the lens 580.

[0443] For example, a material containing a resin can be used for the lens 580. Specifically, a resin into which chlorine, bromine, or iodine has been introduced, a resin into which heavy metal atoms have been introduced, a resin into which an aromatic ring has been introduced, a resin into which sulfur has been introduced, or the like can be used for the lens 580. Alternatively, a material containing a resin and nanoparticles of a material having a refractive index higher than that of the resin can be used for the lens 580. Titanium oxide, zirconium oxide, or the like can be used for the nanoparticles.

[0444] <Configuration example of display device.7> The configuration of the display device according to one aspect of the present invention will be described with reference to FIG. 13.

[0445] FIG. 13 is a diagram for explaining the configuration of the display device according to one aspect of the present invention. FIG. 13(A) is a cross-sectional view of a pixel at a position corresponding to the cut line Y1-Y2 shown in FIG. 10(A), and FIG. 13(B) is a cross-sectional view for explaining a part of the configuration of the pixel shown in FIG. 13(A).

[0446] The configuration of the display device described in this configuration example has the same configuration as the display device 700 described with reference to FIG. 11, except that a liquid crystal element that can be driven using the guest-host liquid crystal mode is used for the first display element 750(i,j) and a bottom gate type transistor is used. Here, the different parts will be described in detail, and the above description will be incorporated for the parts that can use the same configuration.

[0447] The display device described in this embodiment uses a guest-host liquid crystal mode for driving. A liquid crystal element that can be driven is used for the first display element 750(i,j). As a result, a reflective display device can be provided without using a polarizing plate. Or, the display of the display device can be brightened.

[0448] 《Layer 753 Containing Liquid Crystal Material》 For example, nematic liquid crystal, thermotropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal, etc. can be used for the layer containing the liquid crystal material. Or, a liquid crystal material showing a cholesteric phase can be used. Or, a liquid crystal material showing a blue phase can be used.

[0449] Further, for example, a dichroic dye can be included in the layer 753 containing the liquid crystal material. Note that a liquid crystal material containing a dichroic dye is called a guest-host liquid crystal.

[0450] Specifically, a material having a large absorbance in the long axis direction of the molecule and a small absorbance in the short axis direction orthogonal to the long axis direction can be used for the dichroic dye. Preferably, a material having a dichroic ratio of 10 or more can be used for the dichroic dye, and more preferably, a material having a dichroic ratio of 20 or more can be used for the dichroic dye.

[0451] For example, azo dyes, anthraquinone dyes, dioxazine dyes, etc. can be used for the dichroic dye.

[0452] Also, a two-layer liquid crystal layer containing a homogeneously aligned dichroic dye can be used for the layer containing the liquid crystal material with a structure in which the alignment directions are orthogonal to each other. As a result, omnidirectional can be made to easily absorb light. Or, the contrast can be enhanced. It can.

[0453] Also, a phase transition type guest - host liquid crystal or a structure in which droplets containing a guest - host liquid crystal are dispersed in a polymer can be used for the layer 753 containing the liquid crystal material. It can be used.

[0454] <Configuration example of the display device.8> The configuration of the display device according to one aspect of the present invention will be described with reference to FIG. 14.

[0455] FIG. 14 is a diagram for explaining the configuration of the display device according to one aspect of the present invention. FIG. 14(A) is a cross - sectional view of a pixel at a position corresponding to the cut line Y1 - Y2 shown in FIG. 10(A), and FIG. 14(B) is a cross - sectional view for explaining a part of the configuration of the pixel shown in FIG. 14(A). 0(A), and FIG. 14(B) is a cross - sectional view for explaining a part of the configuration of the pixel shown in FIG. 14(A). It is a cross - sectional view for explaining a part of the configuration of the pixel shown in FIG. 14(A).

[0456] The configuration of the display device described in this configuration example has the same configuration as the display device 700 described with reference to FIG. 13, except that it includes a lens 580. It has the same configuration as the display device 700 described with reference to FIG. 13.

[0457] <Operation example of the display device> The operation of the display device according to one aspect of the present invention will be described with reference to FIG. 24.

[0458] FIG. 24 is a diagram for explaining the operation of the display device according to one aspect of the present invention. FIG. 24(A) is a cross - sectional view for explaining a part of the operation state of the pixel shown in FIG. 11(A), and FIG. 24(B) is a cross - sectional view for explaining an operation state different from the operation state shown in FIG. 24(A). Also, FIG. 24(C) is a cross - sectional view for explaining an operation state different from the operation state shown in FIG. 24(A) or FIG. 24(B). The direction in which external light is incident on and reflected by the first display element 750(i,j) is indicated by a dashed arrow It is a cross - sectional view for explaining an operation state different from the operation state shown in FIG. 24(A). Also, FIG. 24(C) is a cross - sectional view for explaining an operation state different from the operation state shown in FIG. 24(A) or FIG. 24(B). It is. Note that the direction in which external light is incident on and reflected by the first display element 750(i,j) is indicated by a dashed arrow is used to show in the figure. Also, the direction in which the second display element 550(i, j) emits light is shown in the figure using a solid-line arrow. is shown in the figure using a solid-line arrow.

[0459] <<Operating state 1.>> The operating state in which the liquid crystal material LC is aligned in the thickness direction of the layer 753 containing the liquid crystal material is shown in FIG. 24(A). For example, the alignment of the liquid crystal material LC is controlled using an alignment film.

[0460] For example, when using a circular polarizing plate, a reflective film 751B, and a VA-IPS mode, a dark tone can be displayed in this operating state without applying an electric field. In other words, it is possible to operate a normally black liquid crystal display element.

[0461] Although not shown in the figure, for example, when using a reflective film 751B and a guest-host liquid crystal mode, a bright tone can be displayed in this operating state without applying an electric field. In other words, it is possible to operate a normally white liquid crystal display element.

[0462] <<Operating state 2.>> The operating state in which the second display element 550 emits light while aligning the liquid crystal material LC in the thickness direction of the layer 753 containing the liquid crystal material is shown in FIG. 24(B). Note that the light emitted by the second display element 550(i, j) passes through the structure KB1 without passing through the layer 753 containing the liquid crystal material.

[0463] For example, when using a circular polarizing plate, a reflective film 751B, and a VA-IPS mode, while displaying a dark tone on the first display element 750(i, j) in this operating state without applying an electric field, display can be performed using the second display element 550. Thereby, a high contrast can be achieved. An image can be displayed. Or, an image can be displayed with vivid colors.

[0464] 《Operating state 3.》 An operating state in which the liquid crystal material LC is oriented in a direction intersecting the thickness direction of the layer 753 containing the liquid crystal material is shown in FIG. 24(C). For example, the orientation of the liquid crystal material LC is controlled using an electric field.

[0465] For example, when using a circular polarizing plate, a reflective film 751B, and a VA-IPS mode, a bright gradation can be displayed.

[0466] Although not shown, for example, when using a reflective film 751B and a guest-host liquid crystal mode a dark gradation can be displayed without using a polarizing plate.

[0467] Note that by providing an electrode having the comb-like shape shown in FIGS. 22 and 24, the touch sensor shown in the first embodiment can be easily incorporated into the first display element.

[0468] Also, a hybrid display method is a method of displaying a plurality of lights in the same pixel or the same sub-pixel to display characters or / and images. Also, a hybrid display is an assembly that displays a plurality of lights in the same pixel or the same sub-pixel included in the display unit to display characters or / and images.

[0469] As an example of the hybrid display method, there is a method of displaying the first light and the second light at different display timings in the same pixel or the same sub-pixel. At this time, in the same pixel or the same sub-pixel, the first light and the second light of the same color tone (any one of red, green, or blue, or cyan, magenta, or yellow) are simultaneously displayed, and characters are displayed in the display unit Alternatively, and / or an image can be displayed.

[0470] Also, as an example of the hybrid display method, there is a method of displaying reflected light and self-emitted light in the same pixel or the same sub-pixel. Reflected light and self-emitted light of the same color tone (for example, OEL light, LED light, etc.) can be simultaneously displayed in the same pixel or the same sub-pixel.

[0471] Note that in the hybrid display method, instead of the same pixel or the same sub-pixel, a plurality of lights may be displayed in adjacent pixels or adjacent sub-pixels. Also, simultaneously displaying the first light and the second light means displaying the first light and the second light for the same period to such an extent that flickering is not perceived by the human eye. If flickering is not perceived by the human eye, the display periods of the first light and the second light may be shifted.

[0472] Also, a hybrid display has a plurality of display elements in the same pixel or the same sub-pixel, and is an aggregate in which each of the plurality of display elements displays during the same period. Also, a hybrid display has a plurality of display elements and active elements for driving the display elements in the same pixel or the same sub-pixel. Examples of the active elements include switches, transistors, thin film transistors, etc. Since an active element is connected to each of the plurality of display elements, the display of each of the plurality of display elements can be individually controlled.

[0473] Note that in this embodiment, one aspect of the present invention has been described. Or, in other embodiments, one aspect of the present invention is described. However, one aspect of the present invention is not limited to these. That is, in this embodiment and other embodiments, various aspects of the invention are described. ​ Therefore, one aspect of the present invention is not limited to a specific aspect. For example, as one aspect of the present invention Although an example of applying to a display device is shown, one aspect of the present invention is not limited thereto. In some cases, or depending on the situation, one aspect of the present invention may not be applied to a display device. For example, one aspect of the present invention may be applied to a semiconductor device having another function. For example As one aspect of the present invention, an example in the case where the channel formation region, source-drain region, etc. of a transistor has an oxide semiconductor is shown, but one aspect of the present invention is not limited thereto. In some cases, or depending on the situation, various transistors, the channel formation region of a transistor, or the source-drain region of a transistor, etc. in one aspect of the present invention may have various semiconductors. In some cases, or depending on the situation, various transistors, the channel formation region of a transistor, or the source-drain region of a transistor, etc. in one aspect of the present invention may have at least one of, for example, silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, aluminum gallium arsenide, indium phosphide, gallium nitride or an organic semiconductor, etc. Or for example, in some cases or depending on the situation, various transistors, the channel formation region of a transistor, or the source-drain region of a transistor, etc. in one aspect of the present invention may not have an oxide semiconductor.

[0474] As described above, the configurations and methods shown in this embodiment can be used in appropriate combination with the configurations and methods shown in other embodiments.

[0475] (Embodiment 3) ​In this embodiment, the configuration of the information processing apparatus according to an aspect of the present invention will be described with reference to FIGS. 25 and 26. This will be described with reference to FIGS. 25 and 26.

[0476] FIGS. 25 and 26 are diagrams for explaining the configuration of the information processing apparatus according to an aspect of the present invention. FIG. 2 5(A) is a block diagram of the information processing apparatus, and FIGS. 25(B) to 25(E) are perspective views for explaining the configuration of the information processing apparatus. Also, FIGS. 26(A) to 26(E) are perspective views for explaining the configuration of the information processing device apparatus.

[0477] <Information Processing Apparatus> The information processing apparatus 5200B described in this embodiment includes an arithmetic unit 5210 and an input / output unit 5220 (see FIG. 25(A)).

[0478] The arithmetic unit 5210 has a function of supplying operation information and a function of supplying image information based on the operation information.

[0479] The input / output unit 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5 290, a function of supplying operation information, and a function of being supplied with image information. Also, the input / output unit 5220 has a function of supplying detection information, a function of supplying communication information, and a function of being supplied with communication information to be supplied.

[0480] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing apparatus 5200B.

[0481] Specifically, a keyboard, a hardware button, a pointing device, a touch sensor panel, a voice input device, a gaze input device, etc. can be used for the input unit 5240.

[0482] The display unit 5230 has a function of a display device and displaying image information. For example, in the embodiment 1, the display device described in 1 can be used as the display unit 5230.

[0483] The detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment in which the information processing device is used and supplying it as detection information. Specifically, an illuminance sensor, an imaging device, an attitude detection device, a pressure sensor, a human presence sensor, etc. can be used for the detection unit 5250.

[0484] Specifically, an illuminance sensor, an imaging device, an attitude detection device, a pressure sensor, a human presence sensor, etc. can be used for the detection unit 5250. Specifically, an illuminance sensor, an imaging device, an attitude detection device, a pressure sensor, a human presence sensor, etc. can be used for the detection unit 5250.

[0485] The communication unit 5290 has a function of being supplied with communication information and a function of supplying it. For example, it has a function of connecting to other electronic devices or a communication network by wireless communication or wired communication. Specifically, it has functions such as wireless in-building communication, telephone communication, and short-range wireless communication.

[0486] 《Configuration Example 1 of Information Processing Device.》 For example, an outer shape along a cylindrical column or the like can be applied to the display unit 5230 (see Fig. 25 (B)). Also, it has a function of changing the display method according to the illuminance of the usage environment. Also it has a function of detecting the presence of a person and changing the display content. Thereby, for example, it can be installed on a column of a building. Or, it can display advertisements or guidance, etc. Or it can be used for digital signage or the like. it can be used for digital signage or the like.

[0487] 《Configuration Example 2 of Information Processing Device.》 For example, it has a function of generating image information based on the trajectory of a pointer used by a user ( see Fig. 25(C)). Specifically, the length of the diagonal line is 20 inches or more, preferably 40 inches A display device with a size of 50 inches or more, more preferably 55 inches or more can be used. Or, a plurality of display devices can be arranged side by side and used in one display area. Or, a plurality of display devices can be arranged side by side and used for a multi-screen. Thereby, for example, it can be used for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc.

[0488] 《Configuration Example 3 of the Information Processing Device.》 For example, it is equipped with a function to change the display method according to the illuminance of the usage environment (see Fig. 25(D) ). Thereby, for example, the power consumption of a smartwatch can be reduced. Or , for example, so that it can be preferably used even in an environment with strong external light such as outdoors on a sunny day, an image can be displayed on the smartwatch .

[0489] 《Configuration Example 4 of the Information Processing Device.》 The display unit 5230 has, for example, a curved surface that gently bends along the side surface of the housing (see Fig. 25( E)). Or, the display unit 5230 includes a display device, and the display device has a function to display on, for example, the front surface, side surface and upper surface. Thereby, for example, image information can be displayed not only on the front surface of a mobile phone but also on the side surface and upper surface.

[0490] 《Configuration Example 5 of the Information Processing Device.》 For example, it is equipped with a function to change the display method according to the illuminance of the usage environment (see Fig. 26(A) ). Thereby, the power consumption of a smartphone can be reduced. Or, for example, so that it can be preferably used even in an environment with strong external light such as outdoors on a sunny day, an image can be displayed on the smartphone .

[0491] 《Configuration Example 6 of the Information Processing Device.》 ​For example, it has a function of changing the display method according to the illuminance of the usage environment (see Fig. 26(B)). Thus, even when strong external light shines indoors on a sunny day, it can be suitably used to display the video on a television system.

[0492] 《Configuration Example 7 of Information Processing Apparatus》 For example, it has a function of changing the display method according to the illuminance of the usage environment (see Fig. 26(C)). Thus, for example, it can be suitably used even in an environment with strong external light such as outdoors on a sunny day to display the image on a tablet computer.

[0493] 《Configuration Example 8 of Information Processing Apparatus》 For example, it has a function of changing the display method according to the illuminance of the usage environment (see Fig. 26(D)). Thus, for example, it can be suitably viewed even in an environment with strong external light such as outdoors on a sunny day to display the subject on a digital camera.

[0494] 《Configuration Example 9 of Information Processing Apparatus》 For example, it has a function of changing the display method according to the illuminance of the usage environment (see Fig. 26(E)). Thus, for example, it can be suitably used even in an environment with strong external light such as outdoors on a sunny day to display the image on a personal computer.

[0495] (Embodiment 4) [Transistor] The transistor has a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode , a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer. Fig. 13 shows the case where a bottom gate structure transistor is applied .

[0496] Note that the structure of the transistor included in the display device according to one aspect of the present invention is not particularly limited. For example it may be a planar transistor, or it may be a staggered transistor or an inverse staggered transistor. Also, it may be any of a top gate type or a bottom gate type transistor structure. Alternatively, gate electrodes may be provided above and below the channel as well.

[0497] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a partially crystalline region ) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0498] Also, as the semiconductor material used for the transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used. Typically, it is a metal oxide containing indium, etc., and for example, CAC -OS etc. described later can be used.

[0499] A transistor using a metal oxide having a wider band gap and a smaller carrier density than silicon can retain the charge accumulated in a capacitive element connected in series with the transistor for a long period due to its low off-current.

[0500] The semiconductor layer is, for example, indium, zinc, and M (aluminum, titanium, gallium, germanium magnesium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium It can be a film represented by an In-M-Zn-based oxide containing a metal such as nickel.

[0501] When the metal oxide constituting the semiconductor layer is an In-M-Zn-based oxide, the atomic ratio of the metal elements of the sputtering target used to form the In-M-Zn oxide is preferably such that In ≧ M and Zn ≧ M. Such atomic ratios of the metal elements of the sputtering target include In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In :M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4. 1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5: 1:8, etc. are preferable. Note that the atomic ratio of the semiconductor layer formed includes a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target.

[0502] The transistor having the bottom gate structure exemplified in this embodiment is preferable because the manufacturing process can be reduced. Also, by using a metal oxide at this time, it can be formed at a lower temperature than polycrystalline silicon, and as a material for wiring and electrodes in a layer lower than the semiconductor layer and a material for a substrate, a material with low heat resistance can be used, so the range of material selection can be widened. For example, a glass substrate with an extremely large area can be preferably used. As the semiconductor layer, a metal oxide film with a low carrier density is used. For example, the semiconductor layer

[0503] has a carrier density of 1 × 10 / cm 17 or less, preferably 1 × 10 3 or less, more preferably 1 × 10 15 / cm 3 or less, even more preferably 1 × 10 13 / cm 3Hereinafter, more preferably 1×10 11 / cm 3 Hereinafter, more preferably 1×10 / cm 10 / cm 3 less than, and 1×10 -9 / cm 3 or more of metal oxides can be used. Such metal oxides are called high-purity intrinsic or substantially high-purity intrinsic metal oxides. As a result, since the impurity concentration is low and the density of defect levels is low, it can be said that the metal oxide has stable characteristics.

[0504] Note that the present invention is not limited to these, and those having an appropriate composition may be used according to the semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the required transistor. Further, in order to obtain the semiconductor characteristics of the required transistor, it is preferable to make the carrier density, impurity concentration, defect density, atomic number ratio of metal element and oxygen, interatomic distance, density, etc. of the semiconductor layer appropriate.

[0505] In the metal oxide constituting the semiconductor layer, if silicon or carbon, which is one of the Group 14 elements, is contained, oxygen deficiency increases in the semiconductor layer and it becomes n-type. For this reason, the concentration of silicon or carbon (concentration obtained by secondary ion mass spectrometry) in the semiconductor layer is set to 2× 10 10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less.

[0506] In addition, when an alkali metal and an alkaline earth metal are combined with a metal oxide, carriers may be generated and the off-current of the transistor may increase. For this reason, the semiconductor The concentration of alkali metal or alkaline earth metal obtained by secondary ion mass spectrometry in the layer is made to be 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0507] In addition, when nitrogen is contained in the metal oxide constituting the semiconductor layer, electrons as carriers are generated, the carrier density increases, and it tends to be n-type. As a result, a transistor using a metal oxide containing nitrogen tends to have normal-on characteristics. For this reason, the nitrogen concentration obtained by secondary ion mass spectrometry in the semiconductor layer is 5×10 atoms / cm 18 or less 3 is preferably made.

[0508] In addition, the semiconductor layer may have, for example, a non-single crystal structure. The non-single crystal structure includes, for example, CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor, or C-Axis Aligned and A-B-plane Anchored Crystalline Oxide Semiconductor) having a crystal oriented in the c-axis direction, a polycrystalline structure, a microcrystalline structure, or an amorphous structure . In the non-single crystal structure, the amorphous structure has the highest density of defect levels, and CAAC-OS has the lowest density of defect levels.

[0509] The metal oxide film having an amorphous structure has, for example, a disordered atomic arrangement and no crystal component . Or, the oxide film having an amorphous structure has, for example, a completely amorphous structure and no crystal part .

[0510] In addition, the semiconductor layer may have an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA The film may be a mixed film having two or more of the C-OS region and the single crystal structure region. The composite film may be, for example, a single-layer structure including two or more of the above-mentioned regions, or a laminated structure. It may have a structure.

[0511] <CAC-OSの構成> The following describes a CAC (C This paper explains the configuration of the Multicloud Aligned Composite Operating System (MSO).

[0512] In this specification, the term "metal oxide" refers to a metal in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). ), oxide semiconductor (also called "OS"), For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, when describing an OS FET, In other words, the transistor can be a transistor including a metal oxide or an oxide semiconductor.

[0513] In this specification, the metal oxide has a region having a conductor function and a region having a dielectric function. When the metal oxide as a whole functions as a semiconductor, it is called a Cloud Acoustic-Conductive-Conductive (CAC) structure. -Aligned Composite)-OS(Oxide Semiconductor) or), or CAC-metal oxide.

[0514] In other words, CAC-OS is a type of oxide semiconductor in which the elements constituting the oxide semiconductor are 0.5 nm or more thick. It is unevenly distributed in a size of less than 10 nm, preferably 0.5 nm or more and 3 nm or less, or in the vicinity thereof. This is one configuration of the material. In the following, in the oxide semiconductor, one or more elements are unevenly distributed, and the region having the element is mixed in a state of 0.5 nm or more and 10 nm or less, preferably 0 .5 nm or more and 3 nm or less, or in the vicinity thereof, and is also referred to as a mosaic state or a patch state.

[0515] The region where a specific element is unevenly distributed determines the physical properties due to the properties of the element. For example a region where an element that tends to be an insulator among the elements constituting the metal oxide is unevenly distributed becomes a dielectric region. On the other hand, a region where an element that tends to be a conductor among the elements constituting the metal oxide is unevenly distributed becomes a conductor region. Further, by mixing the conductor region and the dielectric region in a mosaic state, the material functions as a semiconductor.

[0516] That is, the metal oxide in one aspect of the present invention is a matrix composite in which materials having different physical properties are mixed, or a kind of metal matrix composite (metal matrix composite).

[0517] In addition, the oxide semiconductor preferably contains at least indium. In particular, indium and zinc are preferably contained. In addition to these, an element M (M is gallium, aluminum uminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium (neodymium), hafnium, tantalum, tungsten, or magnesium, etc.) selected from one kind or a plurality of kinds may be contained.

[0518] For example, CAC-OS in In-Ga-Zn oxide (In- The Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0) or indium zinc oxide compound (hereinafter referred to as In X2 Zinc Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (GaO X3 (X3 is a real number greater than 0). ), or gallium zinc oxide (Ga X4 Zinc Y4 O Z4 (X4, Y4, and Z4 are The material is separated into mosaics, and the mosaic is created. Zinc-like InO X1 , or In X2 Zinc Y2 O Z2 The structure in which the ions are uniformly distributed in the film (see below) (Also called cloud-like.)

[0519] In other words, CAC-OS is X3 The region where In is the main component and X2 Zinc Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region in which In this specification, for example, the atomic ratio of In to the element M in the first region is is greater than the atomic ratio of In to the element M in the second region. Assume that the In concentration is higher than in region 2.

[0520] Note that IGZO is a common name and refers to a compound composed of In, Ga, Zn, and O in some cases. As a representative example, InGaO3(ZnO) m1 (where m1 is a natural number), or In (1 +x0) Ga (1-x0) O3(ZnO) m0 (-1 ≤ x0 ≤ 1, m0 is an arbitrary number) represents a crystalline compound. Examples include crystalline compounds.

[0521] The above crystalline compound has a single crystal structure, polycrystalline structure, or CAAC structure. Note that The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without orientation in the a-b plane. It is a crystal structure in which they are connected without orientation in the a-b plane.

[0522] On the other hand, CAC-OS relates to the material composition of oxide semiconductors. CAC-OS refers to a material composition containing In, Ga, Zn, and O, in which nano-particle-like regions mainly composed of Ga are observed in part, and nano-particle-like regions mainly composed of In are observed in part, and they are randomly dispersed in a mosaic pattern. That is, it refers to a structure in which they are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary element. It is a secondary element.

[0523] Note that CAC-OS does not include a laminated structure of two or more types of films with different compositions. For example, a structure composed of two layers, a film mainly composed of In and a film mainly composed of Ga, is not included.

[0524] Note that in some cases, no clear boundary can be observed between the region where GaO X3 is the main component and the region where In X2 Zn Y2 O Z2 , or InO X1 is the main component.

[0525] In addition, when one or more selected from aluminum, silicon, boron, yttrium, copper, barium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium are included instead of gallium, the CAC-OS refers to a structure in which nanoparticle regions mainly composed of some of these elements are observed, and nanoparticle regions mainly composed of In are observed, and they are randomly dispersed in a mosaic pattern. Partially, nanoparticle regions mainly composed of the element are observed, and partially, nanoparticle regions mainly composed of In are observed, and they are randomly dispersed in a mosaic pattern. Partially, nanoparticle regions mainly composed of the element are observed, and partially, nanoparticle regions mainly composed of In are observed, and they are randomly dispersed in a mosaic pattern.

[0526] <Analysis of CAC-OS> Subsequently, the results of measurements performed on the oxide semiconductor formed on the substrate using various measurement methods will be described. Subsequently, the results of measurements performed on the oxide semiconductor formed on the substrate using various measurement methods will be described.

[0527] ≪Configuration and Fabrication Method of Samples≫ Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. Note that the sample has a structure including a substrate and an oxide semiconductor on the substrate. Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. Note that the sample has a structure including a substrate and an oxide semiconductor on the substrate. Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. Note that the sample has a structure including a substrate and an oxide semiconductor on the substrate.

[0528] The fabrication method of each sample will be described.

[0529] First, a glass substrate is used as the substrate. Subsequently, using a sputtering apparatus, an In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. First, a glass substrate is used as the substrate. Subsequently, using a sputtering apparatus, an In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. The film formation conditions are such that the pressure in the chamber is 0.6 Pa, and an oxide target (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used for the target. Also, 2500 W of AC power is supplied to the oxide target installed in the sputtering apparatus. (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used for the target. Also, 2500 W of AC power is supplied to the oxide target installed in the sputtering apparatus. (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used for the target. Also, 2500 W of AC power is supplied to the oxide target installed in the sputtering apparatus.

[0530] In addition, as the conditions for forming the oxide film, the substrate temperature was set to a temperature that is not intentionally heated (hereinafter , also referred to as room temperature or R.T.), 130 °C, or 170 °C. Further, the flow rate ratio of oxygen gas to the mixed gas of Ar and oxygen (hereinafter also referred to as the oxygen gas flow rate ratio) was set to 10%, 3 0%, or 100%, to produce nine samples.

[0531] ≪Analysis by X-ray diffraction≫ In this section, the results of X-ray diffraction (XRD: X-ray diffracti on) measurements for nine samples will be described. As the XRD apparatus, D8 ADVANCE manufactured by Bruker was used. Further, the conditions were θ / 2θ scanning by the Out-of-plane method, with a scanning range of 15 deg. to 50 deg., a step width of 0.02 deg ., and a scanning speed of 3.0 deg. / min.

[0532] Fig. 27 shows the results of measuring the XRD spectrum using the Out-of-plane method. In Fig. 27, the upper part shows the measurement results for the sample with a substrate temperature condition of 170 °C during film formation, the middle part shows the measurement results for the sample with a substrate temperature condition of 130 °C during film formation, and the lower part shows the measurement results for the sample with a substrate temperature condition of R.T. during film formation. Also, the left column shows the measurement results for the sample with an oxygen gas flow rate ratio condition of 10%, the middle column shows the measurement results for the sample with an oxygen gas flow rate ratio condition of 30%, and the right column shows the measurement results for the sample with an oxygen gas flow rate ratio condition of 100%.

[0533] The XRD spectrum shown in Fig. 27 shows that the peak intensity near 2θ = 31° increases by increasing the substrate temperature during film formation or by increasing the proportion of the oxygen gas flow rate ratio during film formation. Note that The peak near 2θ = 31° is due to the crystalline IGZO compound oriented along the c-axis with respect to the direction substantially perpendicular to the surface to be formed or the upper surface (also referred to as CAAC (c-axis aligned crystalli ne)-IGZO).

[0534] Also, the XRD spectrum shown in FIG. 27 showed no distinct peak as the substrate temperature during film formation was lower or the oxygen gas flow rate ratio was smaller. Therefore, it can be seen that in samples with a lower substrate temperature during film formation or a smaller oxygen gas flow rate ratio, no orientation was observed in the a-b plane direction and the c-axis direction of the measurement region.

[0535] ≪Analysis by Electron Microscope≫ In this section, the results of observing and analyzing samples prepared at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% using HAADF (High-Angle Annular Dark Field)-ST EM (Scanning Transmission Electron Micros cope) will be described (hereinafter, the image obtained by HAADF-ST EM is also referred to as a TEM image).

[0536] The results of image analysis of the planar image (hereinafter also referred to as a planar TEM image) and the cross-sectional image (hereinafter also referred to as a cross-sectional TEM image) obtained by HAADF-STEM will be described. The TEM image was observed using a spherical aberration correction function. For the acquisition of the HAADF-STEM image, a JEOL JEM-ARM200F atomic resolution analytical electron microscope manufactured by JEOL Ltd. was used to irradiate an electron beam with an acceleration voltage of 200 kV and a beam diameter of approximately 0.1 nmφ.

[0537] ​​​​Figure 28(A) shows a plan-view TEM image of a sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10%. Figure 28(B) shows a cross-sectional TEM image of the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10%. during film formation and an oxygen gas flow rate ratio of 10%.

[0538] <<Analysis of Electron Diffraction Pattern>> In this section, the results of obtaining an electron diffraction pattern by irradiating a sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% with an electron beam having a probe diameter of 1 nm (also referred to as a nano-beam electron beam) will be described. with an electron beam having a probe diameter of 1 nm (also referred to as a nano-beam electron beam). The results of obtaining an electron diffraction pattern by irradiating a sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% with an electron beam having a probe diameter of 1 nm (also referred to as a nano-beam electron beam) will be described.

[0539] In the plan-view TEM image of the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% shown in Figure 28(A), the electron diffraction patterns indicated by black dots a1, a2, a3, a4, and a5 are observed. The observation of the electron diffraction pattern is performed while moving the electron beam at a constant speed from the 0-second position to the 35-second position while irradiating the electron beam. The result of black dot a1 is shown in Figure 28(C), the result of black dot a2 is shown in Figure 28(D), the result of black dot a3 is shown in Figure 28(E), the result of black dot a4 is shown in Figure 28(F), and the result of black dot a5 is shown in Figure 28(G). In the plan-view TEM image of the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% shown in Figure 28(A), the electron diffraction patterns indicated by black dots a1, a2, a3, a4, and a5 are observed. Note that the observation of the electron diffraction pattern is performed while moving the electron beam at a constant speed from the 0-second position to the 35-second position while irradiating the electron beam. The observation of the electron diffraction pattern is performed while moving the electron beam at a constant speed from the 0-second position to the 35-second position while irradiating the electron beam. The result of black dot a1 is shown in Figure 28(C), the result of black dot a2 is shown in Figure 28(D), the result of black dot a3 is shown in Figure 28(E), the result of black dot a4 is shown in Figure 28(F), and the result of black dot a5 is shown in Figure 28(G). The result of black dot a1 is shown in Figure 28(C), the result of black dot a2 is shown in Figure 28(D), the result of black dot a3 is shown in Figure 28(E), the result of black dot a4 is shown in Figure 28(F), and the result of black dot a5 is shown in Figure 28(G).

[0540] From Figure 28(C), Figure 28(D), Figure 28(E), Figure 28(F), and Figure 28(G), a region with high luminance can be observed in a circular (ring-shaped) manner. Also, a number of spots can be observed in the ring-shaped region. a region with high luminance can be observed in a circular (ring-shaped) manner. Also, a number of spots can be observed in the ring-shaped region.

[0541] Also, in the cross-sectional TEM image of the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% shown in Figure 28(B), black dots b1, b2, b3, b4, and In the cross-sectional TEM image of the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow rate ratio of 10% shown in Figure 28(B), black dots b1, b2, b3, b4, and Observe the electron diffraction pattern indicated by the black dot b5. The results of the black dot b1 are shown in FIG. 28(H), the results of the black dot b 2 in FIG. 28(I), the results of the black dot b3 in FIG. 28(J), the results of the black dot b4 in FIG. 28(K ), and the results of the black dot b5 are shown in FIG. 28(L).

[0542] From FIGS. 28(H), 28(I), 28(J), 28(K), and 28(L), bright regions can be observed in a ring shape. Also, a plurality of spots can be observed in the ring-shaped region .

[0543] Here, for example, when an electron beam with a probe diameter of 300 nm is incident parallel to the sample surface on a CAAC-OS having InGaZnO4 crystals, a diffraction pattern including spots due to the (00 9) plane of the InGaZnO4 crystals can be seen. That is, it can be understood that CAAC-OS has c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the formed surface or the upper surface . On the other hand, when an electron beam with a probe diameter of 300 nm is incident perpendicular to the sample surface on the same sample , a ring-shaped diffraction pattern is confirmed. That is, it can be understood that CAAC-OS does not have orientation in the a-axis and b-axis .

[0544] Also, for an oxide semiconductor having microcrystals (nano crystalline oxide semiconductor. Hereinafter referred to as nc-OS), when electron diffraction is performed using an electron beam with a large probe diameter (for example, 50 nm or more), a diffraction pattern such as a halo pattern is observed. Also, when nano-beam electron diffraction is performed on nc-OS using an electron beam with a small probe diameter (for example less than 50 nm), bright spots (spots) are observed . Also, when nano-beam electron diffraction is performed on nc-OS, it is like drawing a circle (ring-shaped ). ​There may be cases where a region with high luminance is observed. Furthermore, there may be cases where multiple bright spots are observed in a ring-shaped region.

[0545] The electron diffraction pattern of the sample fabricated at the substrate temperature R.T. during film formation and with an oxygen gas flow ratio of 10% has a region with high luminance in a ring shape and multiple bright spots in the ring region. Therefore, the sample fabricated at the substrate temperature R.T. during film formation and with an oxygen gas flow ratio of 10% has an electron diffraction pattern that becomes nc-OS and has no orientation in the planar direction and the cross-sectional direction.

[0546] From the above, an oxide semiconductor with a low substrate temperature during film formation or a small oxygen gas flow ratio is presumably clearly different in properties from both an amorphous oxide semiconductor film and a single crystal oxide semiconductor film.

[0547] ≪Elemental analysis≫ In this section, energy dispersive X-ray spectroscopy (EDX) is used to obtain EDX mapping and evaluate the results of elemental analysis of the sample fabricated at the substrate temperature R.T. during film formation and with an oxygen gas flow ratio of 10%. For EDX measurement, an energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. is used as the elemental analysis device. In addition, an Si drift detector is used for detecting the X-rays emitted from the sample.

[0548] In EDX measurement, an electron beam is irradiated onto each point in the analysis target region of the sample, and the energy and number of generated characteristic X-rays of the sample are measured to obtain an EDX spectrum corresponding to each point. In this embodiment, the peak of the EDX spectrum at each point is the electron transition to the L shell of In atoms. ​​​​​​​​​​ attributed to the electron transitions to the K-shells of Ga atoms, Zn atoms, and O atoms, and calculate the ratio of each atom at each point. By performing this for the analysis target region of the sample, EDX mapping showing the distribution of the ratios of each atom can be obtained.

[0549] Fig. 29 shows the EDX mapping of the cross-section of a sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow ratio of 10%. Fig. 29(A) is the EDX mapping of Ga atoms ( the ratio of Ga atoms to all atoms ranges from 1.18 to 18.64 [atomic%].). Fig. 29(B) is the EDX mapping of In atoms (the ratio of In atoms to all atoms ranges from 9.28 to 33.74 [atomic%].). Fig. 29( C) is the EDX mapping of Zn atoms (the ratio of Zn atoms to all atoms ranges from 6.69 to 2 4.99 [atomic%].). Also, Fig. 29(A), Fig. 29(B ), and Fig. 29(C) show the same range of regions in the cross-section of the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow ratio of 10%. Note that in the EDX mapping, the brighter the image, the more of the measured element there is in the range, and the darker the image, the less of the measured element there is, and the light and dark show the ratio of the elements. Also, the magnification of the EDX mapping shown in Fig. 29 is 7.2 million times.

[0550] In the EDX mappings shown in Fig. 29(A), Fig. 29(B), and Fig. 29(C), relative light and dark distributions can be seen in the images, and in the sample fabricated at a substrate temperature of R.T. during film formation and an oxygen gas flow ratio of 10%, it can be confirmed that each atom exists with a distribution. Here, ​​​​​​​​​​​​The ranges enclosed by the solid lines and the ranges enclosed by the dashed lines shown in FIGS. 29(A), 29(B), and 29(C) are noted.

[0551] In FIG. 29(A), the range enclosed by the solid line contains relatively many dark regions, and the range enclosed by the dashed line contains relatively many bright regions. Also, in FIG. 29(B), the range enclosed by the solid line is relatively bright and contains many bright regions, and the range enclosed by the dashed line contains relatively many dark regions.

[0552] That is, the range enclosed by the solid line is a region where In atoms are relatively abundant, and the range enclosed by the dashed line is a region where In atoms are relatively scarce. Here, in FIG. 29(C), in the range enclosed by the solid line , the right side is a relatively bright region, and the left side is a relatively dark region. Therefore, the range enclosed by the solid line is a region where In X2 Zn Y2 O Z2 , or InO X1 , etc. are the main components.

[0553] Also, the range enclosed by the solid line is a region where Ga atoms are relatively scarce, and the range enclosed by the dashed line is a region where Ga atoms are relatively abundant. In FIG. 29(C), in the range enclosed by the dashed line, the upper left region is a relatively bright region, and the lower right region is a relatively dark region. Therefore, the range enclosed by the dashed line is a region where GaO X3 , or Ga X4 Zn Y4 O Z4 , etc. are the main components. is present.

[0554] Also, from FIGS. 29(A), 29(B), and 29(C), the distribution of In atoms is relatively more uniform than that of Ga atoms, and the region where InO X1 is the main component is In X2 Zn Y2 OZ2 It seems to be formed by being connected to each other through a region where Z2 is the main component. Thus, In X2 Zn Y2 O Z2 or InO X1 the region where X1 is the main component is formed by spreading in a clover-like shape.

[0555] X3 Thus, a region where components such as GaO X2 Zn Y2 O Z2 or InO are the main components, and a region where In X1 Zn O X3

[0556] The In-Ga-Zn oxide having a structure in which they are unevenly distributed and mixed can be called CAC-OS. Also, the crystal structure of CAC-OS has an nc structure. The nc structure of CAC-OS has several or more bright spots (spots) in an electron diffraction image, in addition to those caused by single crystal, polycrystal, or CAAC structure in IGZO. Alternatively, the crystal structure is defined such that, in addition to several or more bright spots (spots), a region with high luminance appears in a ring shape.

[0557] X3 From FIGS. 29(A), 29(B), and 29(C), the size of the region where components such as GaO are the main components, and the region where In X2 Zn Y2 O Z2 or InO X1 are the main components is observed to be 0.5 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less. Preferably, in EDX mapping, the diameter of the region where each element is the main component is 1 nm or more and 2 nm or less.

[0558] Therefore, CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed. It is different from the IGZO compound and has different properties. That is, CAC-OS is X3 in a region where GaO X2 Zn Y2 O Z2 or InO X1 is the main component, and phase-separates from each other, and has a structure in which regions with each element as the main component are mosaic-shaped.

[0559] Here, the region where In X2 Zn Y2 O Z2 or InO X1 is the main component is a region with higher conductivity compared to the region where GaO X3 etc. are the main components. That is, when carriers flow through the region where In X2 Zn Y 2O Z2 or InO X1 is the main component, the conductivity as an oxide semiconductor is manifested. Therefore, when the region where In X2 Zn Y2 O Z2 or InO X1 is distributed in a cloud shape in the oxide semiconductor, a high field-effect mobility (μ) can be realized.

[0560] On the other hand, the region where GaO X3 etc. are the main components is a region with higher insulation compared to the region where In X2 Zn Y2 O Z2 or InO X 1 is the main component. That is, when the region where GaO X3 etc. are the main components is distributed in the oxide semiconductor, the leakage current is suppressed, and a good etching operation can be realized.

[0561] Therefore, when using CAC-OS in a semiconductor device, the insulating property caused by GaO X3 and so on, and , In X2 Zn Y2 O Z2 , or the conductivity caused by InO X1 act complementarily, so that a high on-current (I ) and a high field-effect mobility (μ) can be realized. on It is possible.

[0562] In addition, a semiconductor device using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including displays.

[0563] In addition, a transistor having CAC-OS in the semiconductor layer has a high field-effect mobility and a high driving ability. Therefore, by using the transistor in a driving circuit, typically a gate line driving circuit that generates a gate signal, a display device with a narrow frame width (also referred to as a narrow frame) can be provided. In addition, by using the transistor in a signal line driving circuit that supplies signals from signal lines of a display device (particularly, a demultiplexer connected to the output terminal of a shift register included in the signal line driving circuit), a display device with a small number of wirings connected to the display device can be provided. It is possible.

[0564] In addition, a transistor having CAC-OS in the semiconductor layer does not require a laser crystallization process like a transistor using low-temperature polysilicon. Therefore, even in a display device using a large-area substrate, the manufacturing cost can be reduced. Furthermore, ultra-high vision (``4K resolution'', ``4K2K'', ``4K''), super high vision (``8K resolution ), ”, “8K4K”, “8K”), and in a large display device, half By using a transistor having CAC-OS in the semiconductor layer for the drive circuit and the display unit, writing can be performed in a short time, and it is possible to reduce display defects, which is preferable.

[0565] Alternatively, silicon may be used for the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as the silicon, it is particularly preferable to use crystalline silicon. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has a higher field effect mobility and higher reliability than amorphous silicon.

[0566] The bottom gate structure transistor exemplified in this embodiment is preferable because the manufacturing process can be reduced. Also, at this time, by using amorphous silicon, it can be formed at a lower temperature than polycrystalline silicon. Therefore, as the material of the wiring, electrodes, and substrate below the semiconductor layer, a material with low heat resistance can be used, so the range of material selection can be widened. For example, a very large area glass substrate can be preferably used. On the other hand, the top gate type transistor is preferable because impurity regions can be formed self-alignedly, and variations in characteristics can be reduced. At this time, in particular, it is suitable when using polycrystalline silicon, single crystal silicon, etc.

[0567]

[0567] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification.

Explanation of Reference Numerals

[0568] ACF1 Conductive Material ADD Wiring AF1 Alignment Film AF2 Alignment Film ANO Wiring BM Light-Shielding Film C11 Capacitor Element C12 Capacitor Element CF1 Coloring Film COM Wiring COM-Rx Wiring COM-Tx Wiring CSCOM Wiring CTRL Wiring G1 Scanning Line G2 Scanning Line GVSS Wiring KB1 Structure L1 Visible Light L2 Light ND1 Wiring ND2 Wiring ND3 Wiring R1 Arrow S1 Signal Line S2 Signal Line SD1 Driving Circuit SD2 Driving Circuit SW1 Switch SW2 Switch V11 Information V12 Information VCOM1 Wiring VCOM2 Conductive Layer 10 Display Device 11 Substrate 12 Substrate 13 FPC 14 Conductive Layer 20 Liquid Crystal Element 21 Conductive Layer 21a Conductive Layer 21b Conductive Layer 22 Conductive Layer 22a Conductive Layer 22b Conductive Layer 22c Conductive Layer 23 Liquid Crystal 24 Insulating Layer 31 Color film 61 Gate driver 61a Decoder 61b Selection circuit 61c Shift register 61d Switch 61e Switch 61f Switch 61g Buffer 61h Switch 62 Receiver circuit 63 Touch sensor 64 Pixel 64a Selection transistor 64b Capacitor element 64c Liquid crystal display element 64d Contact 64e Contact 64f Common electrode 64g Contact 64h Wiring 65 Scanning line 66 Signal line 67 Capacitor element 68 Pixel electrode 200 Liquid crystal display device 201 Display section 202 Gate line drive circuit 203 Pixel 231 Display area 305a Connection section 307a Liquid crystal element 307b Liquid crystal element 311 Substrate 312 Insulating layer 313 Insulating layer 315 Insulating layer 317 Insulating layer 319 Insulating layer 331 Conductive layer 333 Conductive layer 335 Conductive layer 341 Color film 343 Light-shielding film 345 Insulating layer 347 Spacer 349 Liquid crystal 351 Conductive layer 352 Conductive layer 352a Wiring 353 Insulating layer 361 Substrate 365 Adhesive layer 367 Connector 368 IC 369 FPC 370a Transistor 372 Polysilicon film 373 Conductive layer 374a Conductive layer 374b Conductive layer 380a Transistor 501B Insulating film 501C Insulating film 504 Conductive layer 505 Bonding layer 506 Insulating film 508 Semiconductor film 511B Conductive layer 512A Conductive layer 512B Conductive layer 516 Insulating film 518 Insulating film 518A Insulating film 518A1 Insulating film 518A2 Insulating film 518B Insulating film 519B Terminal 520 Functional layer 521 Insulating film 521A Insulating film 521B Insulating film 521C Insulating film 522 Connection part 524 Conductive layer 528 Insulating film 530 Pixel circuit 550 Display element 551 Electrode 552 Electrode 553 Layer containing a light-emitting material 560 Optical element 560A Region 560B Region 560C Region 565 Coating film 570 Substrate 580 lens 591A opening 592B opening 700 display device 700B display device 702 pixel 703 pixel 705 sealing material 720 functional layer 750 display element 751 first electrode 751A conductive layer 751B reflective film 751C conductive layer 751H region 752 second electrode 753 layer containing liquid crystal material 770 substrate 770D functional film 770P functional film 770PA functional film 770PB functional film 771 insulating film 771A insulating film 771B insulating film 5200B information processing device 5210 arithmetic unit 5220 input / output device 5230 display section 5240 input section 5250 detection section 5290 communication section

Claims

【Claim 1】 A semiconductor device having a first switch, a second switch, a first capacitive element, and a second capacitive element, wherein the first switch is electrically connected to a first signal line, a first terminal of the first switch is electrically connected to a common line, a second terminal of the first switch is electrically connected to a first wiring, a third terminal of the first switch is electrically connected to a first touch wiring, the second switch is electrically connected to the first signal line, a first terminal of the second switch is electrically connected to the common line, a second terminal of the second switch is electrically connected to a second wiring, a third terminal of the second switch is electrically connected to a second touch wiring, a first electrode of the first capacitive element is electrically connected to the first wiring, a second electrode of the first capacitive element is electrically connected to a third touch wiring, a first electrode of the second capacitive element is electrically connected to the second wiring, and a second electrode of the second capacitive element is electrically connected to the third touch wiring.

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