Holding member
The holding member's design with a cross-flow path and internal wiring enhances cooling performance by efficiently dissipating heat from wafers using a heat-conducting gas and cooling electrodes.
Patent Information
- Application Number
- JP2024003685
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-01-15
- Publication Date
- 2025-07-28
AI Technical Summary
The increasing power of plasma during processing leads to higher temperatures in wafers, necessitating improved heat extraction performance from holding members.
The holding member features a gas flow path with a cross-flow path portion parallel to the surface, a cooling electrode between the path and the surface, and internal wiring exposed within the path to enhance cooling.
The configuration improves the cooling performance of the holding member by efficiently dissipating heat from the wafer through the use of a heat-conducting gas and cooling electrodes.
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Figure 2025110010000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a holding member.
Background Art
[0002] As an example of a holding member, an electrostatic chuck described in Patent Document 1 below is known. This electrostatic chuck includes a plate having a first surface and a second surface, a first electrode embedded in the plate in proximity to the first surface, a second electrode embedded in the plate in proximity to the second surface, a plurality of conductive elements connecting the first electrode to the second electrode, a first gas channel disposed within the plate and between the first electrode and the second electrode, a gas inlet extending from the second surface of the plate to the first gas channel, and a plurality of gas outlets extending from the first surface of the plate to the first gas channel.
[0003] When performing plasma processing on a substrate, a wafer, or the like, the electrostatic chuck is placed inside a plasma processing chamber or the like with the first surface of the plate as the upper surface and the second surface as the lower surface, and a substrate or the like is held on the first surface. Then, high-frequency power is applied to a metal cooling plate disposed below the plate to generate plasma and to generate a bias voltage on the substrate or the like. Further, in order to enhance the temperature controllability of the substrate or the like held on the first surface of the plate, a heat-conductive gas such as helium is sent from the second surface side through the gas flow path in the plate to the first surface side.
Prior Art Documents
Patent Documents
[0004]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0005] In recent years, in order to speed up processing, the plasma has been made more powerful during processing. Along with the increase in power, the wafer tends to get hot, so the required level regarding the heat extraction performance from the wafer by the holding member is also rising.
[0006] The present disclosure has been completed based on the above circumstances, and aims to improve the cooling performance of the holding member.
Means for Solving the Problem
[0007] The holding member of the present disclosure is an insulating plate-shaped member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-shaped member through which a heat-conductive gas flows, a cooling electrode formed inside the plate-shaped member, and an internal wiring formed inside the plate-shaped member and having one end connected to the cooling electrode. The gas flow path has a cross-flow path portion extending substantially parallel to the first surface, the cooling electrode is disposed between the cross-flow path portion and the first surface, and the other end of the internal wiring is disposed to be exposed inside the cross-flow path portion.
Effect of the Invention
[0008] According to the present disclosure, the cooling performance of the holding member can be improved.
Brief Description of the Drawings
[0009]
Figure 1
Figure 2
Figure 3
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Figure 5
Figure 6
Figure 7
Mode for Carrying Out the Invention
[0010] [Description of Embodiments of the Present Disclosure] First, the embodiments of the present disclosure will be enumerated and described. (1) The holding member of the present disclosure includes an insulating plate-like member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-like member through which a heat-conducting gas flows, a cooling electrode formed inside the plate-like member, and an internal wiring formed inside the plate-like member and having one end connected to the cooling electrode. The gas flow path has a cross-flow path portion extending substantially parallel to the first surface, the cooling electrode is disposed between the cross-flow path portion and the first surface, and the other end of the internal wiring is exposed and disposed inside the cross-flow path portion.
[0011] The heat-conducting gas flowing through the gas flow path is considered to be at a lower temperature than the object to be held on the first surface or the plate-like member. Here, since the other end of the internal wiring is exposed inside the cross-flow path portion, the other end of the internal wiring is cooled by the heat-conducting gas, and the plate-like member is cooled through the internal wiring and the cooling electrode. Since the cooling electrode is disposed between the cross-flow path portion and the first surface, the object to be held is efficiently cooled. Therefore, the cooling performance of the holding member can be improved.
[0012] (2) The holding member of the present disclosure is an insulating plate-like member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-like member through which a heat-conducting gas flows, and a cooling electrode formed inside the plate-like member. The gas flow path includes a gas inlet opening to the second surface side, a vertical flow path portion extending from the gas inlet to the first surface side, and a horizontal flow path portion connected to the vertical flow path portion and extending substantially parallel to the first surface. The cooling electrode is disposed between the horizontal flow path portion and the second surface and is exposed and disposed in the vertical flow path portion.
[0013] Since the cooling electrode is exposed in the vertical flow path portion, the cooling electrode is cooled by the heat-conducting gas, and the plate-like member and the object to be held are cooled by the cooling electrode. Therefore, the cooling performance of the holding member can be improved.
[0014] (3) The holding member of the present disclosure is an insulating plate-like member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-like member through which a heat-conducting gas flows, and a cooling electrode formed inside the plate-like member. The gas flow path includes a gas inlet opening to the second surface side, a vertical flow path portion extending from the gas inlet to the first surface side, and a horizontal flow path portion connected to the vertical flow path portion and extending substantially parallel to the first surface. The cooling electrode is disposed between the vertical flow path portion and the first surface and is exposed and disposed in the horizontal flow path portion.
[0015] Since the cooling electrode is exposed in the horizontal flow path portion, the cooling electrode is cooled by the heat-conducting gas, and the plate-like member is cooled through the cooling electrode. Therefore, the cooling performance of the holding member can be improved.
[0016] (4) Preferably, when viewed from the first surface side, the cooling electrode is a planar electrode having an area larger than the area of the portion overlapping the horizontal flow path portion. Since the cooling electrode is a planar electrode, a plate-like member and an object to be held with a sufficient area can be cooled.
[0017] (5) In the holding member according to any one of (1) to (4), the holding member further includes a base member disposed on the second surface side of the plate-like member, and a refrigerant flow path through which refrigerant flows is formed inside the base member, and the cooling electrode is preferably disposed at a position that does not overlap with the refrigerant flow path when viewed from the first surface side. A portion that does not overlap with the refrigerant flow path when viewed from the first surface side is difficult to be cooled by the refrigerant. Since such a portion that is difficult to be cooled can be cooled by the cooling electrode, the holding member can be efficiently cooled.
[0018] (6) In the holding member according to any one of (1), (4), and (5), the cross-flow path portion includes a first cross-flow path portion extending to the outer peripheral side of the holding member when viewed from the first surface side, and a plurality of second cross-flow path portions branching from the first cross-flow path portion and further extending to the outer peripheral side of the holding member than the first cross-flow path portion, and the other end of the internal wiring is preferably disposed so as to be exposed inside the second cross-flow path portion. The outer peripheral side of the holding member is often more difficult to dissipate heat than the inner peripheral side. According to the above configuration, since the other end of the internal wiring is exposed inside the second cross-flow path portion extending to the outer peripheral side of the holding member than the first cross-flow path portion, the holding member can be efficiently cooled.
[0019] [Details of Embodiments of the Present Disclosure] <Embodiment 1> Embodiment 1 of the present disclosure will be described with reference to FIGS. 1 to 5. Note that the present disclosure is not limited to these examples, and is defined by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims. In the following description, for a plurality of identical members, only some members may be labeled, and the labels of other members may be omitted. In this specification, the positive direction of the Z axis is the upward direction, the negative direction of the Z axis is the downward direction, and the XY plane direction is the horizontal direction. The configuration of the holding member will be described, but in the actual use mode of the holding member, it may be arranged differently. Also, in this specification, "orthogonal" shall include arrangements in a mode that is substantially recognized as orthogonal.
[0020] <Electrostatic Chuck> The holding member of the present disclosure is an electrostatic chuck 100 that can adsorb and hold an object such as a semiconductor wafer or a glass substrate (hereinafter referred to as "wafer W"). The electrostatic chuck 100 is attached to a processing chamber of a semiconductor manufacturing apparatus (not shown), for example, and is used to perform various processes (film formation, etching, etc.) on the wafer W using plasma.
[0021] As shown in FIG. 1, the electrostatic chuck 100 includes a plate-like member 10, a base member 20, and a joint portion 40 that joins the plate-like member 10 and the base member 20. The electrostatic chuck 100 is configured to be able to adsorb and hold the wafer W by electrostatic attraction.
[0022] <Plate-like member> The plate-like member 10 has a disk shape as a whole, and can be formed into a shape having a diameter of about 300 mm and a thickness of about 5 mm, for example. The plate-like member 10 is an insulating substrate, and is formed of, for example, ceramics mainly composed of aluminum nitride (AlN) or alumina (Al2O3). Here, the main component means the component having the highest content ratio (weight ratio) (the same applies hereinafter).
[0023] The upper surface of the plate-like member 10 is a first surface S1 orthogonal to the Z-axis direction. The first surface S1 is a circular plane and functions as an adsorption surface for holding the wafer W. As shown in FIG. 2, in the plate-like member 10, the surface (i.e., the lower surface) disposed on the side opposite to the first surface S1 is a second surface S2. The second surface S2 is joined to the base member 20 via the joint portion 40.
[0024] Inside the plate-shaped member 10, a chuck electrode 50 formed of a conductive material (e.g., tungsten, molybdenum, platinum, etc.) is disposed. The shape of the chuck electrode 50 as viewed in the Z-axis direction is, for example, substantially circular. The chuck electrode 50 is connected to an external electrode 69A via a via 69B. When a voltage is applied from a power source (not shown) to the chuck electrode 50 through the external electrode 69A and the via 69B, an electrostatic attraction force is generated, and the wafer W is adsorbed and fixed to the first surface S1 of the plate-shaped member 10 by this electrostatic attraction force.
[0025] The plate-shaped member 10 having the above-described configuration can be manufactured, for example, by producing a plurality of green sheets made of ceramics, performing processing such as forming via holes, filling and printing a metallizing paste on a predetermined green sheet, thermocompression bonding these green sheets, performing processing such as cutting, and then firing.
[0026] As shown in FIG. 1, a step is provided on the outer periphery of the upper portion of the plate-shaped member 10, and the upper surface of the inner portion 10A of the plate-shaped member 10 is higher than the upper surface of the outer portion 10B of the plate-shaped member 10. The upper surface of the inner portion 10A of the plate-shaped member 10 is taken as the first surface S1. On the upper surface of the outer portion 10B of the plate-shaped member 10, for example, a focus ring FR or a jig (not shown) for fixing the electrostatic chuck 100 is engaged.
[0027] Inside the plate-shaped member 10, a heater 60, a cooling electrode 70, and a via 80, each formed of a conductive material (e.g., tungsten, molybdenum, platinum, etc.), are disposed. In the present embodiment, the heater 60, the cooling electrode 70, and the via 80 are arranged below the chuck electrode 50.
[0028] <Base member> The base member 20 is a disk-shaped member, and for example, it can be formed into a shape with a dimension (diameter) in the XY plane direction of about 340 mm and a dimension (thickness) in the Z-axis direction of about 35 mm. As shown in FIG. 2, the base member 20 has a third surface S3 disposed on the side of the plate-like member 10 and a fourth surface S4 disposed on the side opposite to the third surface S3. The third surface S3 is disposed on the upper side of the base member 20, and the fourth surface S4 is disposed on the lower side of the base member 20. The third surface S3 of the base member 20 is joined to the second surface S2 of the plate-like member 10 by the joining portion 40.
[0029] <Refrigerant flow path> Inside the base member 20, a refrigerant flow path 30 through which a refrigerant (an example of a heat medium) flows is provided. The refrigerant flow path 30 is connected to a refrigerant circulation device (not shown). The refrigerant circulation device is configured to be able to circulate a refrigerant such as a fluorine-based inert liquid or water through the refrigerant flow path 30. When the refrigerant flows through the refrigerant flow path 30, the base member 20 is cooled, and due to the heat transfer (heat extraction) between the base member 20 and the plate-like member 10 through the joining portion 40, the plate-like member 10 is cooled, and the wafer W held on the first surface S1 of the plate-like member 10 is cooled. Thereby, the temperature of the wafer W can be controlled.
[0030] <Heater> As shown in FIG. 3, the heater 60 includes an inner heater 60A embedded in the inner portion 10A of the plate-like member 10 and an outer heater 60B embedded in the outer portion 10B.
[0031] The inner heater 60A has a first resistance heating element 61 and a second resistance heating element 62 as internal electrodes, a first via 63 connected to the first resistance heating element 61 and a second via 64 connected to the second resistance heating element 62, and a first external electrode 65 as a connection portion to an external terminal. The first via 63 connects the first resistance heating element 61 and the first external electrode 65, and the second via 64 connects the first resistance heating element 61 and the second resistance heating element 62 spaced apart in the vertical direction.
[0032] The outer heater 60B includes a third resistance heating element 66 as an internal electrode, a third via 67 connected to the third resistance heating element 66, a second external electrode 68 as a connection portion to an external terminal, and the like. The third via 67 connects the third resistance heating element 66 and the second external electrode 68.
[0033] Each of the resistance heating elements 61, 62, 66 is formed of a conductive material such as tungsten or molybdenum, for example. Each of the resistance heating elements 61, 62, 66 forms a linear pattern extending in a substantially concentric shape as viewed from above, for example.
[0034] Each of the external electrodes 65, 68 is exposed to the outside through the terminal hole 11. The terminal hole 11 is formed to open downward in the plate-like member 10 and penetrates the joint portion 40 and the base member 20 in the vertical direction.
[0035] <Gas flow path> The electrostatic chuck 100 includes a gas flow path 90 through which a heat conduction gas such as helium flows. The gas flow path 90 has a first gas flow path 91 formed in the inner portion 10A of the plate-like member 10 and a second gas flow path 92 formed in the outer portion 10B. The first gas flow path 91 and the second gas flow path 92 communicate with each other. As shown in FIG. 1, the gas flow path 90 has a gas flow outlet 90A that opens to the first surface S1. The gas flow path 90 supplies a heat conduction gas to the first surface S1 side of the electrostatic chuck 100. The heat conduction gas is supplied to the first surface S1 side in such a manner that the heat conduction gas is discharged from each gas flow outlet 90A.
[0036] As shown in FIG. 2, the first gas flow path 91 has a gas flow inlet 91A that opens to the fourth surface S4. Similarly, the second gas flow path 92 has a gas flow inlet 92A that opens to the fourth surface S4. As shown in FIG. 3, each of the gas flow paths 91, 92 further has a cross-flow path portion 91B, 92B that extends substantially parallel to the first surface S1 and an inlet-side vertical flow path portion 91C, 92C that extends in a direction substantially orthogonal to the first surface S1.
[0037] The upstream sides of the cross-flow channel portions 91B and 92B are connected to the inlet-side vertical flow channel portions 91C and 92C. The downstream sides of the cross-flow channel portions 91B and 92B are connected to the gas flow outlet 90A via an outlet-side vertical flow channel portion (not shown). The upstream sides of the inlet-side vertical flow channel portions 91C and 92C are connected to the gas flow inlets 91A and 92A.
[0038] When the heat conduction gas is supplied from the gas flow inlets 91A and 92A of each gas flow channel 91 and 92, the heat conduction gas sequentially passes through each inlet-side vertical flow channel portion 91C and 92C, each cross-flow channel portion 91B and 92B, and each outlet-side vertical flow channel portion, and is finally discharged from a plurality of gas flow outlets 90A provided on the first surface S1.
[0039] Specifically, as shown in FIG. 5 in detail, the cross-flow channel portion 91B of the first gas flow channel 91 has a first cross-flow channel portion 91B1 extending to the outer peripheral side of the electrostatic chuck 100 as viewed from the first surface S1 side, and a plurality of second cross-flow channel portions 91B2 branching from the first cross-flow channel portion 91B1 and further extending to the outer peripheral side of the electrostatic chuck 100 than the first cross-flow channel portion 91B1. Since the outer peripheral side of the electrostatic chuck 100 tends to be at a higher temperature than the inner peripheral side, by feeding the heat conduction gas from the inner peripheral side to the outer peripheral side of the electrostatic chuck 100, it becomes easier to cool the electrostatic chuck 100.
[0040] <Cooling electrode, via> The cooling electrode 70 is a planar electrode extending substantially parallel to the first surface S1 inside the inner portion 10A of the plate-like member 10. The cooling electrode 70 is disposed between the cross-flow channel portion 91B and the first surface S1 in a direction substantially orthogonal to the first surface S1. The cooling electrode 70 is disposed between the first via 63 and the second via 64 in a direction extending substantially parallel to the first surface S1.
[0041] The cooling electrode 70 is connected to the cross-flow channel portion 91B via the via 80. The upper end of the via 80 is connected to the cooling electrode 70, and the lower end of the via 80 is disposed to be exposed inside the cross-flow channel portion 91B. The cooling electrode 70 and the via 80 are formed of a conductive material having excellent thermal conductivity, such as tungsten or molybdenum. The via 80 corresponds to the internal wiring of the present disclosure.
[0042] When viewed from the first surface S1 side, the area of the cooling electrode 70 that overlaps the cross-flow channel portion 91B is larger than the area of the overlapping portion. As shown in FIG. 4, the cross-flow channel portion 91B extends in an annular shape when viewed from above. For this reason, the cooling electrode 70 is formed longer than the cross-flow channel portion 91B in the radial direction of the cross-flow channel portion 91B. The cooling electrodes 70 are arranged at equal intervals on the cross-flow channel portion 91B. The cooling electrode 70 may have, for example, an elliptical shape, and may be arranged such that the major axis direction of the cooling electrode 70 is the radial direction of the cross-flow channel portion 91B. Preferably, the cooling electrode 70 has an area of about 10% to 20% of the total area of the first surface S1.
[0043] Since the heat transfer gas flows through the cross-flow channel portion 91B, the via 80 exposed in the cross-flow channel portion 91B is also cooled by the heat transfer gas. Since the cooling electrode 70 is connected to the via 80, the cooling electrode 70 is cooled along with the cooling of the via 80. Thereby, the electrostatic chuck 100 can be cooled by the gas flow path 90, the via 80, and the cooling electrode 70. By arranging the cooling electrode 70 on the outer peripheral side of the plate-like member 10, it becomes easier to cool the outer peripheral side of the plate-like member 10.
[0044] As shown in FIG. 2, the upper portion between a pair of adjacent refrigerant flow paths 30 is likely to become a hot spot having a higher temperature than other portions. That is, a region without the refrigerant flow path 30 is likely to become a hot spot when viewed from the first surface S1 side. Since the cooling electrode 70 of the present embodiment is mainly arranged in the region without the refrigerant flow path 30, formation of a hot spot can be suppressed.
[0045] The metallization that becomes the cooling electrode 70 is processed by printing a metallization paste or the like on a predetermined green sheet, thermocompression bonding these green sheets, and connecting the horizontal holes that become the horizontal flow path portion 91B and the metallization with vias 80. Then, by performing firing or the like, the lower end of the via 80 connected to the cooling electrode 70 can be exposed inside the horizontal flow path portion 91B.
[0046] <Effects of Embodiment 1> As described above, the electrostatic chuck 100 of Embodiment 1 includes an insulating plate-like member 10 having a first surface S1 and a second surface S2 located on the opposite side of the first surface S1, a gas flow path 90 formed inside the plate-like member 10 through which a heat conduction gas flows, a cooling electrode 70 formed inside the plate-like member 10, and a via 80 formed inside the plate-like member 10 and having an upper end connected to the cooling electrode 70. The gas flow path 90 has a horizontal flow path portion 91B extending substantially parallel to the first surface S1. The cooling electrode 70 is disposed between the horizontal flow path portion 91B and the first surface S1, and the lower end of the via 80 is disposed and exposed inside the horizontal flow path portion 91B.
[0047] The heat conduction gas flowing through the gas flow path 90 is considered to be at a lower temperature than the wafer W or the plate-like member 10 held on the first surface S1. Here, since the lower end of the via 80 is exposed inside the horizontal flow path portion 91B, the lower end of the via 80 is cooled by the heat conduction gas, and the plate-like member 10 is cooled through the via 80 and the cooling electrode 70. Since the cooling electrode 70 is disposed between the horizontal flow path portion 91B and the first surface S1, the wafer W is efficiently cooled. Therefore, the cooling performance of the electrostatic chuck 100 can be improved.
[0048] Generally, the higher the proportion of the cooling electrode 70 in the plate-like member 10, the higher the thermal conductivity. Therefore, the proportion of the cooling electrode 70 can be determined according to the required cooling performance. Since there is no need to energize the cooling electrode 70 and the cooling electrode 70 may be arranged to communicate with the first gas flow path 91, the degree of freedom in arrangement is high. In particular, it is considered that the closer to the first surface S1, the easier it is to cool the wafer W. Since the cooling electrode 70 can be arranged without increasing the thickness of the plate-like member 10, there is an advantage that it is also easy to apply to an existing electrostatic chuck.
[0049] When viewed from the first surface S1 side, it is preferable that the cooling electrode 70 is a planar electrode having an area larger than the area of the portion overlapping with the cross-flow path portion 91B. Since the cooling electrode 70 is a planar electrode, the plate-like member 10 and the wafer W with sufficient area can be cooled.
[0050] The electrostatic chuck 100 further includes a base member 20 disposed on the second surface S2 side of the plate-like member 10. A refrigerant flow path 30 through which refrigerant flows is formed inside the base member 20. It is preferable that the cooling electrode 70 is arranged at a position not overlapping with the refrigerant flow path 30 when viewed from the first surface S1 side. The portion that does not overlap with the refrigerant flow path 30 when viewed from the first surface S1 side is difficult to be cooled by the refrigerant. Since such a difficult-to-cool portion can be cooled by the cooling electrode 70, the electrostatic chuck 100 can be efficiently cooled.
[0051] The cross-flow path portion 91B includes a first cross-flow path portion 91B1 extending to the outer peripheral side of the electrostatic chuck 100 when viewed from the first surface S1 side, and a plurality of second cross-flow path portions 91B2 branching from the first cross-flow path portion 91B1 and further extending to the outer peripheral side of the electrostatic chuck 100 than the first cross-flow path portion 91B1. It is preferable that the lower end of the via 80 is exposed and arranged inside the second cross-flow path portion 91B2. The outer peripheral side of the electrostatic chuck 100 is often more difficult to dissipate heat than the inner peripheral side. According to the above configuration, since the lower end of the via 80 is exposed inside the second cross-flow path portion 91B2 extending to the outer peripheral side of the electrostatic chuck 100 than the first cross-flow path portion 91B1, the electrostatic chuck 100 can be efficiently cooled.
[0052] <Embodiment 2> Next, a specific example of Embodiment 2 of the present disclosure will be described with reference to FIG. 6. The electrostatic chuck 200 of Embodiment 2 has a different arrangement of the cooling electrodes 70 from that of Embodiment 1. For the same configurations as those in Embodiment 1, the same reference numerals may be used and the description may be omitted.
[0053] The electrostatic chuck 200 of the present embodiment includes a plate-like member 210 (210A, 210B) corresponding to the plate-like member 10 of Embodiment 1 and a cooling electrode 270 corresponding to the cooling electrode 70 of Embodiment 1, but does not include a configuration corresponding to the via 80 of Embodiment 1. The cooling electrode 270 is disposed between the cross-flow path portion 91B of the first gas flow path 91 and the second surface S2. The cooling electrode 270 extends substantially parallel to the first surface S1 and is connected to the inlet-side vertical flow path portion 91C of the first gas flow path 91. A part of the cooling electrode 270 is exposed in the inlet-side vertical flow path portion 91C of the first gas flow path 91.
[0054] The metallization for the cooling electrode 270 is formed by performing processing such as printing a metallization paste on a predetermined green sheet, thermocompression bonding these green sheets, and machining a vertical hole to be the inlet-side vertical flow path portion 91C so as to expose it in the vertical hole. Thereafter, by performing firing or the like, a part of the cooling electrode 270 can be exposed in the inlet-side vertical flow path portion 91C.
[0055] <Effects of Embodiment 2> Since the cooling electrode 270 is exposed in the inlet-side vertical flow path portion 91C of the first gas flow path 91, the cooling electrode 270 is cooled by the heat-conductive gas, and the plate-like member 10 and the wafer W are cooled by the cooling electrode 270. Therefore, the cooling performance of the electrostatic chuck 200 can be improved.
[0056] <Embodiment 3> Next, a specific example of Embodiment 3 of the present disclosure will be described with reference to FIG. 7. The electrostatic chuck 300 of Embodiment 3 is obtained by changing the arrangement of the cooling electrodes 70 of Embodiment 1. For the same configurations as those in Embodiment 1, the same reference numerals may be used and the description may be omitted.
[0057] The electrostatic chuck 300 of the present embodiment includes a plate-like member 310 (310A, 310B) corresponding to the plate-like member 10 of Embodiment 1 and a cooling electrode 370 corresponding to the cooling electrode 70 of Embodiment 1, but does not include a configuration corresponding to the via 80 of Embodiment 1. The cooling electrode 370 is disposed between the inlet-side vertical flow path portion 91C of the first gas flow path 91 and the first surface S1. The cooling electrode 370 extends substantially parallel to the first surface S1 and is connected to the cross flow path portion 91B of the first gas flow path 91. Therefore, a part of the cooling electrode 370 is exposed in the cross flow path portion 91B of the first gas flow path 91.
[0058] The metallization that becomes the cooling electrode 370 is processed such as printing a metallization paste on a predetermined green sheet, these green sheets are thermocompression bonded, and a horizontal hole that becomes the cross flow path portion 91B is formed by machining, so as to be exposed in the horizontal hole. Thereafter, by performing firing or the like, a part of the cooling electrode 370 can be exposed in the cross flow path portion 91B.
[0059] <Effect of Embodiment 3> Since the cooling electrode 370 is exposed in the cross flow path portion 91B of the first gas flow path 91, the cooling electrode 370 is cooled by the heat conduction gas, and the plate-like member 10 is cooled through the cooling electrode 370. Therefore, the cooling performance of the electrostatic chuck 300 can be improved.
[0060] <Other Embodiments> (1) In Embodiments 1 to 3 described above, an example in which the area of the cooling electrode overlapping the cross flow path portion 91B is larger has been illustrated, but an area equal to the area of the portion overlapping the cross flow path portion 91B may also be used.
[0061] (2) The base member 20 may be made of a material other than metal. The base member 20 may be composed of, for example, a composite of metal and ceramics (Al - SiC), or ceramics (SiC) as the main component.
[0062] (3) The arrangements of the cooling electrode 70, the cross - flow path portion 91B, and the via 80 shown in FIGS. 4 and 5 are merely examples and are not limited thereto.
Explanation of Reference Numerals
[0063] 10, 210, 310: Plate - like member 10A: Inner part 10B: Outer part 11: Terminal hole 20: Base member 30: Refrigerant flow path 40: Joint portion 50: Chuck electrode 60: Heater 60A: Inner heater 60B: Outer heater 61: First resistance heating element 62: Second resistance heating element 63: First via 64: Second via 65: First external electrode 66: Third resistance heating element 67: Third via 68: Second external electrode 70, 270, 370: Cooling electrode 80: Via (internal wiring) 90: Gas flow path 90A: Gas outlet 91: First gas flow path 91A: Gas inlet 91B: Cross - flow path portion 91B1: First cross - flow path portion 91B2: Second cross - flow path portion 91C: Inlet - side vertical flow path portion 92: Second gas flow path 92A: Gas inlet 92A: Gas inlet 92B: Cross - flow path portion 92C: Inlet - side vertical flow path portion 100, 200, 300: Electrostatic chuck (holding member) FR: Focus ring S1: First surface S2: Second surface S3: Third surface S4: Fourth surface W: Wafer
Claims
1. An insulating plate-shaped member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-shaped member through which a heat-conducting gas flows, a cooling electrode formed inside the plate-shaped member, and an internal wiring formed inside the plate-shaped member and having one end connected to the cooling electrode, the holding member comprising: The gas flow path has a cross-flow path portion extending substantially parallel to the first surface. The cooling electrode is disposed between the cross-flow path portion and the first surface. The other end of the internal wiring is disposed so as to be exposed inside the cross-flow path portion. A holding member.
2. An insulating plate-shaped member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-shaped member through which a heat-conducting gas flows, and a cooling electrode formed inside the plate-shaped member, the holding member comprising: The gas flow path includes a gas inlet opening to the second surface side, a vertical flow path portion extending from the gas inlet to the first surface side, and a cross-flow path portion connected to the vertical flow path portion and extending substantially parallel to the first surface. The cooling electrode is disposed between the cross-flow path portion and the second surface and is disposed so as to be exposed inside the vertical flow path portion. A holding member.
3. An insulating plate-shaped member having a first surface and a second surface located on the opposite side of the first surface, a gas flow path formed inside the plate-shaped member through which a heat-conducting gas flows, and a cooling electrode formed inside the plate-shaped member, the holding member comprising: The gas flow path includes a gas inlet opening to the second surface side, a vertical flow path portion extending from the gas inlet to the first surface side, and a cross-flow path portion connected to the vertical flow path portion and extending substantially parallel to the first surface. The cooling electrode is disposed between the vertical flow path portion and the first surface and is disposed so as to be exposed inside the cross-flow path portion. A holding member.
4. The holding member according to any one of Claims 1 to 3, wherein the cooling electrode is a planar electrode having an area larger than an area of a portion overlapping the cross-flow path portion when viewed from the first surface side.
5. The holding member further includes a base member disposed on the second surface side of the plate-shaped member. A refrigerant flow path through which a refrigerant flows is formed inside the base member. The holding member according to any one of Claims 1 to 3, wherein the cooling electrode is disposed at a position not overlapping the refrigerant flow path when viewed from the first surface side.
6. The cross-flow path portion includes a first cross-flow path portion that extends to the outer peripheral side of the holding member as viewed from the first surface side, and a plurality of second cross-flow path portions that branch from the first cross-flow path portion and further extend to the outer peripheral side of the holding member than the first cross-flow path portion. The holding member according to claim 1, wherein the other end of the internal wiring is disposed and exposed in the second cross-flow path portion.
Citation Information
Patent Citations
Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
WO2020185395A1