Base for semiconductor substrate processing, ceramic base substrate, and manufacturing method

Abstract

To provide a base for a semiconductor substrate processing, a ceramic substrate, and a manufacturing method of the same, in which an ion sheath at an outer peripheral part of a substrate can be adjusted, generation of local non-uniformity of the ion sheath and hot spots can be suppressed, and peeling and wrapping can be suppressed.SOLUTION: A base for a semiconductor substrate processing 100 includes: a ceramic base material 110 formed by a disk-shaped member 111 and an annular member 115; a conductive film 120 formed on a side surface 112 of the disk-shaped member; a power feeding member 130 formed on the annular member 115; a ceramic insulating member 140 formed by a disk-shaped insulating member 141 and an annular insulating member 145; a first plasma generation part 150 provided on one main surface 113 side of the disk-shaped member, and electrically connected to the conductive film 120; and a second plasma generation part 160 provided on one main surface 117 side of the annular member or inside the annular insulating member 145, and electrically connected to the power supply member 130.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a pedestal for semiconductor substrate processing, a ceramic base material used therefor, and a manufacturing method.

Background Art

[0002] In semiconductor processes, particularly in plasma processes using high-frequency power, conventionally, a pedestal for semiconductor substrate processing in which a ceramic base material is disposed on an Al pedestal has been used. The ceramic base material may incorporate an electrode, and in that case, generally, a power supply terminal to the electrode is provided on the ceramic base material.

[0003] When a substrate (wafer) is placed on such a pedestal and a plasma process is performed, the ion sheath becomes non-uniform near the outer periphery of the substrate. Therefore, an annular focus ring has been concentrically disposed outside the outer edge of the substrate to suppress the non-uniformity of the ion sheath.

[0004] Patent Document 1 discloses a plasma processing apparatus, a plasma processing method, and a plasma processing program in which a second mounting table is provided with a coil inside along a mounting surface on which a focus ring is mounted, a third RF power supply applies a high-frequency voltage to the coil, and a power supply control unit controls the third RF power supply so that the power of the high-frequency voltage applied to the coil increases according to the degree of wear of the focus ring.

[0005] Patent Document 2 aims to provide a structure of an electrostatic chuck to which an RF voltage is applied to an internal electrode, in which the influence of the temperature rise of the electrode due to the RF current is small, and thereby the film formation rate distribution during the formation of an insulating film on a wafer is improved. For this purpose, the RF voltage feeding point on the electrode is placed outside the contact surface of the object to be adsorbed to reduce the influence of the electrode temperature, or the feeding point is a plurality of two or more points to reduce the RF current per feeding point. To more easily realize these, an electrostatic chuck is disclosed in which the electrode has a two-layer structure for RF introduction and adsorption, and both are connected by a conductor and the conductor position is set as the RF voltage feeding point of the adsorption electrode.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] Recently, the plasma process has become extremely popular, and a large amount of power has been input into the base. As a result, the high-frequency current has concentrated on the power supply terminals provided on the ceramic substrate, and the temperature and ion sheath near the power supply terminals have become locally non-uniform. At the same time, due to the CTE difference between the Al base and the ceramic substrate, peeling has occurred between the base and the ceramic substrate, or the warpage of the base has become too large, causing problems in the process.

[0008] Therefore, there has been a demand for a base that simultaneously satisfies the following three conditions: (1) the ion sheath in the focus ring region can be adjusted with respect to the ion sheath in the substrate region; (2) no power supply terminals for high-frequency current are used; and (3) it has a stable structure against the large amount of heat input in the process.

[0009] The present invention has been made in view of such circumstances, and an object of the present invention is to provide a base for semiconductor substrate processing, a ceramic substrate, and a method for manufacturing the same, which can adjust the ion sheath at the outer peripheral portion of the substrate, suppress the occurrence of local non-uniformity of the ion sheath and hot spots caused by conventional power supply terminals, suppress the peeling and warpage of the ceramic insulating member from the ceramic substrate, and can have a stable structure.

Means for Solving the Problems

[0010] (1) To achieve the above object, the present invention takes the following means. That is, the base for semiconductor substrate processing in the application example of the present invention is a base for semiconductor substrate processing, which comprises a ceramic base material composed of a disk-shaped member and an annular member disposed outside the disk-shaped member, a conductive film formed on the side surface of the disk-shaped member, a power supply member formed on the annular member, a ceramic insulating member composed of a disk-shaped insulating member formed on one main surface of the disk-shaped member and an annular insulating member formed on one main surface of the annular member, a first plasma generation part provided on one main surface side of the disk-shaped member and electrically connected to the conductive film, and a second plasma generation part provided on one main surface side of the annular member or inside the annular insulating member and electrically connected to the power supply member.

[0011] In this way, by disposing the annular focus ring on the annular member, high-frequency power can be applied independently to the disk-shaped insulating member and the annular insulating member, and the ion sheath in the focus ring region (the region directly above the ring) can be adjusted. Also, in the disk-shaped member, the high-frequency large current used in the plasma process is dispersed, suppressing the occurrence of local ion sheath non-uniformity and hot spots caused by conventional power supply terminals. Further, since both the base material and the insulating member are formed of ceramics, peeling and warping of the ceramic insulating member from the ceramic base material are suppressed, and a stable structure can be obtained.

[0012] (2) Further, in the base for semiconductor substrate processing in the application example of (1) above, the ceramic base material is characterized in that it is formed of a ceramic having a thermal conductivity of 70 W / mK or more. Thereby, since the thermal conductivity of the ceramic base material itself is high, it can be suitably used as a ceramic base material for cooling.

[0013] (3) Further, in the pedestal for semiconductor substrate processing according to the application example of (1) or (2) above, the ceramic base material is characterized in that it is formed of a ceramic containing SiC. Thereby, it is possible to use an aqueous medium that has been avoided due to the risk of corrosion of the refrigerant flow path of the conventional Al pedestal. In addition, SiC itself has a high thermal conductivity and can be suitably used as a ceramic base material for cooling. Further, since SiC itself has conductivity, it can also serve as an electrode for high-frequency current.

[0014] (4) Further, in the pedestal for semiconductor substrate processing according to any of the application examples of (1) to (3) above, the ceramic insulating member is characterized in that it is formed of a ceramic sintered body or a ceramic sprayed film. By these, a ceramic insulating member having electrical insulation and being dense is formed. Also, it is possible to easily form an electrode inside the ceramic insulating member.

[0015] (5) Further, in the pedestal for semiconductor substrate processing according to any of the application examples of (1) to (4) above, the ceramic insulating member is formed of a ceramic sintered body, the ceramic insulating member is adhered to the ceramic base material by an organic adhesive, and the thickness of the layer of the organic adhesive is 100 μm or less. Thereby, the thickness of the adhesive layer can be made thin, and a large amount of heat can be transferred.

[0016] (6) Further, in the pedestal for semiconductor substrate processing according to any of the application examples of (1) to (5) above, the ceramic insulating member is characterized in that it is formed of a ceramic mainly composed of AlN or Al2O3. Thereby, the CTE difference between the ceramic base material and the ceramic insulating member becomes small, so that peeling or warping of the ceramic insulating member from the ceramic base material is further suppressed against the large amount of heat input from the process, and a more stable structure can be obtained.

[0017] (7) Also, in the substrate processing base for semiconductor substrates according to any one of the application examples (1) to (6) above, the disk-shaped insulating member is an electrostatic chuck in which electrodes for electrostatic adsorption are embedded. By using the disk-shaped insulating member as an electrostatic chuck in this way, the substrate can be more strongly adsorbed to the substrate mounting surface, and the amount of heat introduced into the substrate can be more efficiently transmitted to the ceramic base material.

[0018] (8) Also, in the substrate processing base for semiconductor substrates according to any one of the application examples (1) to (7) above, the conductive film is an Al film with a purity of 99.8% or more. Thereby, the impedance of the conductive film with respect to high-frequency current can be reduced, which is effective for high-power processes that pass a large amount of heat through the semiconductor process.

[0019] (9) Also, in the substrate processing base for semiconductor substrates according to any one of the application examples (1) to (8) above, the ceramic base material is formed of a conductive ceramic, the first plasma generation part is one main surface of the disk-shaped member, and the second plasma generation part is one main surface of the annular member. Thereby, it becomes unnecessary to form a high-frequency electrode on the substrate processing base for semiconductor substrates, and the manufacturing cost can be reduced.

[0020] (10) Also, in the substrate processing base for semiconductor substrates according to any one of the application examples (1) to (9) above, the first plasma generation part is a second conductive film formed on one main surface side of the disk-shaped member, and the second plasma generation part is a third conductive film formed on one main surface side of the annular member. Thereby, a high voltage can be applied to the plasma generation part, and the substrate processing base for semiconductor substrates can be used in high-power processes.

[0021] (11) Further, in the base for semiconductor substrate processing according to any one of the application examples (1) to (10) above, the power supply member is a fourth conductive film formed on the inner or outer side surface of the annular member, which is characterized in that. Thereby, current concentration can be avoided even in the annular member, and the generation of local ion sheath non-uniformity and hot spots can be further suppressed.

[0022] (12) Further, in the base for semiconductor substrate processing according to any one of the application examples (1) to (11) above, it further includes a support base for supporting the ceramic base material, and the disk-shaped member and the annular member are concentrically arranged on the support base, which is characterized in that. Thereby, it becomes easier to independently control the high-frequency current to the disk-shaped member and the annular member. Further, since the amount of heat introduced into the ceramic base material is insulated by the support base, the surface temperature of the ceramic base material is smoothed.

[0023] (13) Further, the ceramic base material of the application example of the present invention includes a disk-shaped member having an Al film formed on its side surface and an annular member disposed outside the disk-shaped member, and the disk-shaped member and the annular member are formed of a ceramic having a thermal conductivity of 70 W / mK or more, which is characterized in that.

[0024] Such a ceramic base material can be suitably used for a base for semiconductor substrate processing in a high-power process.

[0025] (14) Further, the manufacturing method of the base for semiconductor substrate processing of the application example of the present invention includes a step of preparing a ceramic base material composed of a disk-shaped member and an annular member formed of a ceramic containing SiC, and a step of forming an Al film on at least a part of the side surface of the disk-shaped member by a cold spray method, which is characterized in that.

[0026] Thereby, a base for semiconductor substrate processing that can be suitably used in a high-power process can be manufactured.

[0027] (15) Further, in the manufacturing method of the application example of (14) above, the method further includes a step of forming a disk-shaped insulating member on one main surface of the disk-shaped member, and a step of forming an annular insulating member on one main surface of the annular member. According to this, a base for semiconductor substrate processing that can be suitably used in a high-power process can be manufactured.

Advantages of the Invention

[0028] According to the base for semiconductor substrate processing or the ceramic base material of the present invention, the ion sheath at the outer peripheral portion of the substrate can be adjusted, and the generation of non-uniformity of the local ion sheath and hot spots caused by the conventional power supply terminals can be suppressed. Further, peeling and warping of the ceramic insulating member from the ceramic base material are suppressed, and a stable structure can be obtained. Further, the manufacturing method of the present invention can manufacture such a base for semiconductor substrate processing.

Brief Description of the Drawings

[0029]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Modes for Carrying Out the Invention

[0030] Next, embodiments of the present invention will be described with reference to the drawings. To facilitate understanding of the description, the same reference numerals are assigned to the same components in each drawing, and duplicate descriptions are omitted. Note that in the configuration diagrams, the sizes of the respective components are conceptually represented and do not necessarily represent actual dimensional ratios.

[0031] [First Embodiment] (Configuration of a Base for Semiconductor Substrate Processing) A base for semiconductor substrate processing according to the first embodiment of the present invention will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing an example of a base for semiconductor substrate processing according to the first embodiment of the present invention. The base 100 for semiconductor substrate processing according to the first embodiment of the present invention includes a ceramic base material 110, a conductive film 120, a power supply member 130, a ceramic insulating member 140, a first plasma generation unit 150, and a second plasma generation unit 160.

[0032] The ceramic base material 110 is composed of a disk-shaped member 111 and an annular member 115 disposed outside the disk-shaped member 111. By disposing an annular focus ring on the annular member 115, high-frequency power can be independently applied to the first plasma generation unit 150 and the second plasma generation unit 160, and the ion sheath in the focus ring region (region directly above the ring) can be adjusted.

[0033] The disk-shaped member 111 is, for example, a disk-shaped member with a diameter of 290 to 310 mm when processing a silicon wafer with a diameter of 300 mm. The thickness of the disk-shaped member 111 varies depending on the internal structure, but can be, for example, 15 to 45 mm. The annular member 115 is, for example, an annular member with an inner diameter of 291 to 311 mm and an outer diameter of 320 to 400 mm. Note that these dimensions are appropriately set according to the dimensions of the silicon wafer to be processed. The thickness of the annular member 115 is set to be thinner than the thickness of the disk-shaped member 111. Also, one main surface 117 of the annular member may be arranged at a position lower in the thickness direction than one main surface 113 of the disk-shaped member. In that case, the thickness of the annular member 115 may be the same as the thickness of the disk-shaped member 111.

[0034] The ceramic substrate 110 is formed of ceramics. Thereby, the CTE difference from the ceramic insulating member 140 can be reduced. Also, structures such as a refrigerant flow path 119 can be provided inside the ceramic substrate 110. The ceramic substrate 110 can be formed of, for example, ceramics containing SiC, ceramics containing AlN, ceramics containing Al2O3, etc.

[0035] The ceramic substrate 110 is preferably formed of ceramics having a thermal conductivity of 70 W / mK or more. Thereby, since the thermal conductivity of the ceramic substrate 110 itself is high, it can be suitably used as the cooling ceramic substrate 110. As ceramics having a thermal conductivity of 70 W / mK or more, for example, ceramics containing SiC, ceramics containing AlN, etc. can be applied.

[0036] The ceramic substrate 110 is preferably formed of conductive ceramics. Thereby, one main surface 113 of the disk-shaped member or one main surface 117 of the annular member can be directly used as the first plasma generation unit 150 or the second plasma generation unit 160. In such a configuration, it is not necessary to form a high-frequency electrode on the base 100 for semiconductor substrate processing, and the manufacturing cost can be reduced.

[0037] The ceramic substrate 110 is preferably formed of a ceramic containing SiC. As a result, an aqueous medium that has been avoided due to the corrosion risk of the refrigerant flow path of the conventional Al base can be used. In addition, SiC itself has a high thermal conductivity and can be suitably used as the ceramic substrate 110 for cooling. Further, since SiC itself has conductivity, it can also serve as an electrode for high-frequency current. Furthermore, the CTE difference from the ceramic insulating member 140 can be reduced, and peeling between the ceramic substrate 110 and the ceramic insulating member 140 and warping of the ceramic insulating member 140 can be suppressed. The ceramic containing SiC refers to a ceramic containing 50 wt% or more of SiC, or a ceramic containing SiC and having a thermal conductivity of 70 W / mK or more. The same applies to the ceramic containing AlN.

[0038] The disk-shaped member 111 preferably has a refrigerant flow path 119 inside. As a result, heat can be absorbed from the substrate by the refrigerant in the refrigerant flow path 119. When the disk-shaped member 111 has a cooling function, the cooling function may be other than by the refrigerant.

[0039] When the disk-shaped member 111 includes the refrigerant flow path 119, the refrigerant flow path 119 may be formed in a tubular shape. At this time, the width of the refrigerant flow path 119 is preferably 1 mm or more and 60 mm or less. The cross-sectional shape of the refrigerant flow path 119 is not limited to a rectangle, and may be any manufacturable shape such as a circular shape, an elliptical shape, a semi-circular shape, or a stepped shape. The refrigerant flow path 119 is preferably of a system that circulates a low-temperature chiller. Therefore, the refrigerant flow path 119 preferably has an inlet for allowing the chiller to flow in and an outlet for allowing the chiller to flow out. At this time, the refrigerant flow path 119 is connected to a chiller unit provided outside the pressure-reducing container.

[0040] The refrigerant flow path 119 may have a shape that can be seen through from above the disk-shaped member 111 and include a substantially annular shape centered on the center of the disk-shaped member 111. The substantially annular shape includes a shape in which a part of the circular arc of the annular shape is not connected and a normal annular shape.

[0041] The refrigerant flow path 119 may be arranged in a concentric circle centered on the center of the disk-shaped member 111 in the shape seen through from above the disk-shaped member 111. The substantially annular refrigerant flow path 119 arranged in a concentric circle may be double or triple or more. The substantially annular refrigerant flow path 119 arranged in a concentric circle may communicate inside the disk-shaped member 111, or an inlet and an outlet may be formed in each of them.

[0042] The width of the gap between adjacent refrigerant flow paths 119 (the width of the disk-shaped member 111 existing in the gap between adjacent refrigerant flow paths 119) is preferably 2 mm or more. Also, the width of the gap between adjacent refrigerant flow paths 119 is preferably 25% or more of the width of the refrigerant flow path 119. Thereby, even if the refrigerant flow path 119 is formed inside the disk-shaped member 111 formed of ceramics, the strength of the disk-shaped member 111 can be maintained.

[0043] The refrigerant flow path 119 may include a linear shape. Also, a combination of a substantially annular refrigerant flow path 119 and a linear refrigerant flow path 119 may be used. The substantially annular refrigerant flow path 119 and the linear refrigerant flow path 119 may communicate with each other.

[0044] The conductive film 120 is formed on the side surface 112 of the disk-shaped member. The conductive film 120 supplies power to the first plasma generation unit 150. Thereby, in the disk-shaped member 111, the high-frequency large current used in the plasma process is dispersed, and the occurrence of local ion sheath non-uniformity and hot spots due to the conventional power supply terminal can be suppressed. The thickness of the conductive film 120 is preferably 10 μm or more and 1000 μm or less.

[0045] The conductive film 120 may be formed on the entire side surface 112 of the disc-shaped member, or may be formed on a part of the side surface 112 of the disc-shaped member. When the conductive film 120 is formed on a part of the side surface 112 of the disc-shaped member, it is preferably formed so as to connect at least a part to one main surface 113 of the disc-shaped member and the opposite main surface. At this time, the width of the conductive film 120 in the direction parallel to one main surface 113 of the disc-shaped member on the side surface 112 of the disc-shaped member is preferably 50 mm or more. The conductive film 120 may be formed on a part of the lower surface or the upper surface of the disc-shaped member 111 for electrical connection.

[0046] The conductive film 120 is preferably an Al film with a purity of 99.8% or more. Thereby, the impedance of the conductive film with respect to the high-frequency current can be reduced, which is effective for a high-power process that allows a large amount of heat to pass through the semiconductor process.

[0047] The power supply member 130 is formed on the annular member 115. The power supply member 130 supplies power to the second plasma generation unit 160. The power supply member 130 may be a terminal 132 inserted into a terminal hole formed in the annular member 115. This is because even if the terminal 132 is used for power supply to the second plasma generation unit 160 with the annular member 115, the possibility of local ion sheath non-uniformity or hot spot generation is not large compared to the disc-shaped member 111.

[0048] The ceramic insulating member 140 includes a disc-shaped insulating member 141 formed on one main surface 113 of the disc-shaped member and an annular insulating member 145 formed on one main surface 117 of the annular member. The disc-shaped insulating member 141 has a substrate mounting surface. The annular insulating member 145 has a focus ring mounting surface.

[0049] The ceramic insulating member 140 is preferably formed by a ceramic spray film. Thereby, a ceramic insulating member 140 having electrical insulation, being dense and thin is formed. Also, the thermal resistance of the ceramic insulating member 140 can be reduced. Further, the ceramic insulating member 140 can be directly formed on the ceramic substrate 110. Similarly, when the first plasma generation part 150 or the second plasma generation part 160 is the second conductive film 122 or the third conductive film 123 described later, the ceramic insulating member 140 can be directly formed thereon. When the ceramic insulating member 140 is formed of a ceramic spray film, the thickness of the ceramic insulating member 140 is preferably 0.5 mm or more and 2 mm or less.

[0050] The ceramic insulating member 140 is preferably formed of a ceramic mainly composed of AlN or Al2O3. Thereby, since the CTE difference between the ceramic substrate 110 and the ceramic insulating member 140 becomes small, peeling or warping between the ceramic insulating member 140 and the ceramic substrate 110 is suppressed against the large amount of heat input from the process, and a stable structure can be obtained. The main component means a ceramic containing 50 wt% or more of the compound. In particular, when the ceramic substrate 110 is formed of a ceramic containing SiC, a ceramic containing AlN, or a ceramic containing Al2O3, it is preferable to form the ceramic insulating member 140 of a ceramic mainly composed of AlN or a ceramic mainly composed of Al2O3 because the CTE difference can be sufficiently reduced.

[0051] The first plasma generation part 150 is provided on one main surface 113 side of the disk-shaped member and is electrically connected to the conductive film 120. Also, the second plasma generation part 160 is provided on one main surface 117 side of the annular member or inside the annular insulating member 145 and is electrically connected to the power supply member 130. Thus, by connecting separate high-frequency power supplies to the first plasma generation part 150 and the second plasma generation part 160, the generation of plasma can be individually adjusted.

[0052] When the disk-shaped member 111 is formed of a conductive ceramic, the first plasma generation part 150 is preferably one main surface 113 of the disk-shaped member. Further, when the annular member 115 is formed of a conductive ceramic, the second plasma generation part 160 is preferably one main surface 117 of the annular member. By these, it becomes unnecessary to form a high-frequency electrode on the semiconductor substrate processing base 100, and the manufacturing cost can be reduced. Either one of the first plasma generation part 150 or the second plasma generation part 160 may have the above configuration.

[0053] [Second Embodiment] (Configuration of Semiconductor Substrate Processing Base) The semiconductor substrate processing base according to the second embodiment of the present invention will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view showing an example of the semiconductor substrate processing base according to the second embodiment of the present invention. The basic configuration of the semiconductor substrate processing base 100 according to the second embodiment is the same as the configuration of the semiconductor substrate processing base 100 according to the first embodiment. The semiconductor substrate processing base 100 according to the second embodiment includes a ceramic base material 110, a conductive film 120, a power supply member 130, a ceramic insulating member 140, a first plasma generation part 150, and a second plasma generation part 160. Hereinafter, the points different from the semiconductor substrate processing base 100 according to the first embodiment will be described. Note that the features of different embodiments may be combined and applied.

[0054] The ceramic insulating member 140 is preferably formed of a ceramic sintered body. Thereby, a ceramic insulating member 140 having electrical insulation, being dense, and having high thermal conductivity is formed. Also, the thermal resistance of the ceramic insulating member 140 can be reduced. Also, an electrode can be easily formed inside the ceramic insulating member 140. When the ceramic insulating member 140 is formed of a ceramic sintered body, the thickness of the ceramic insulating member 140 is preferably 0.5 mm or more and 10 mm or less. Note that when an electrode is embedded inside the ceramic insulating member 140, it may be thicker than this.

[0055] When the ceramic insulating member 140 is formed of a ceramic sintered body, the ceramic insulating member 140 is preferably adhered to the ceramic base material 110 with an organic adhesive. Thereby, an adhesive layer 170 can be provided according to the CTE difference between the ceramic base material 110 and the ceramic insulating member 140, and even when the CTE difference between the ceramic base material 110 and the ceramic insulating member 140 is relatively large, the reliability of the joining can be enhanced. Also, the degree of freedom in selecting the materials of the ceramic base material 110 and the ceramic insulating member 140 is increased.

[0056] When using an organic adhesive, it is preferable that a filler for enhancing thermal conductivity is added to the organic adhesive. The thermal conductivity of the adhesive layer 170 is preferably 0.4 W / mK or more. The thickness of the adhesive layer 170 is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. Thereby, a large amount of heat can be transferred. In the base 100 for semiconductor substrate processing of the present invention, since both the base material and the insulating member are formed of ceramics and the CTE difference is smaller than before, there is no problem even if the thickness of the adhesive layer 170 is made thinner. On the other hand, when it is thicker than 100 μm, the thermal resistance of the adhesive layer 170 may become non-negligible even when using a highly thermally conductive organic adhesive. The lower limit of the thickness of the adhesive layer 170 can be, for example, 10 μm or more. This is because it becomes difficult to control the thickness if it is thinner than this.

[0057] Note that even when the ceramic insulating member 140 is formed of a ceramic sintered body, when the CTE difference between the ceramic base material 110 and the ceramic insulating member 140 is sufficiently small, the joining between the ceramic base material 110 and the ceramic insulating member 140 may be direct joining or joining with a brazing material (including a metal thin film) containing a metal such as In, Al, Au.

[0058] The first plasma generation unit 150 is preferably the second conductive film 122 formed on one main surface 113 side of the disk-shaped member. Also, the second plasma generation unit 160 is preferably the third conductive film 123 formed on one main surface 117 side of the annular member. Thereby, a high-frequency power source can be connected to the plasma generation unit, and the base 100 for semiconductor substrate processing can be used for a high-power process. Either one of the first plasma generation unit 150 or the second plasma generation unit 160 may have the above configuration. The second conductive film 122 or the third conductive film 123 may be formed when the ceramic base material 110 is formed of conductive ceramics. The second plasma generation unit 160 may be a high-frequency electrode provided inside the annular insulating member 145.

[0059] The power supply member 130 is preferably the fourth conductive film 124 formed on the side surface 116 of the annular member (the inner or outer side surface of the annular member 115). Thereby, current concentration can be avoided even in the annular member 115, and the generation of local ion sheath non-uniformity and hot spots can be further suppressed.

[0060] The fourth conductive film 124 may be formed on the entire inner or outer side surface of the annular member 115, or may be formed on a part of the inner or outer side surface of the annular member 115. When the fourth conductive film 124 is formed on a part of the side surface 116 of the annular member, at least a part is preferably formed so as to connect one main surface 117 of the annular member and the opposite main surface. At this time, the width of the fourth conductive film 124 in the direction parallel to one main surface 117 of the annular member on the side surface 116 of the annular member is preferably 50 mm or more. The fourth conductive film 124 may be formed on both the inner and outer side surfaces of the annular member 115. The fourth conductive film 124 may be formed on a part of the lower surface or the upper surface of the annular member 115 for electrical connection. The material and thickness of the second conductive film 122, the third conductive film 123, or the fourth conductive film 124 may be the same as or different from the material and thickness of the conductive film 120.

[0061] [Third Embodiment] (Configuration of the Base for Semiconductor Substrate Processing) The base for semiconductor substrate processing according to the third embodiment of the present invention will be described with reference to FIG. 3. FIG. 3 is a schematic cross-sectional view showing an example of the base for semiconductor substrate processing according to the third embodiment of the present invention. The basic configuration of the base 100 for semiconductor substrate processing according to the third embodiment is the same as the configuration of the base 100 for semiconductor substrate processing according to the first and second embodiments. The base 100 for semiconductor substrate processing according to the third embodiment includes a ceramic base material 110, a conductive film 120, a power supply member 130, a ceramic insulating member 140, a first plasma generation unit 150, and a second plasma generation unit 160. Hereinafter, the differences from the base 100 for semiconductor substrate processing according to the first and second embodiments will be described.

[0062] The disk-shaped insulating member 141 is preferably an electrostatic chuck 180 in which the electrostatic adsorption electrode 182 is embedded. By using the disk-shaped insulating member 141 as the electrostatic chuck 180, the substrate can be adsorbed more strongly to the substrate mounting surface, and the amount of heat introduced into the substrate can be more efficiently transmitted to the ceramic base material 110. When the disk-shaped insulating member 141 is the electrostatic chuck 180, the disk-shaped insulating member 141 is formed of a ceramic sintered body.

[0063] The electrostatic adsorption electrode 182 is embedded in the disk-shaped insulating member 141. The shape of the electrostatic adsorption electrode 182 can be various shapes such as a mesh shape or a foil shape. Also, the material can be various materials such as molybdenum and tungsten.

[0064] Power supply to the electrostatic adsorption electrode 182 may be performed by a terminal (not shown). This is because, in the case of the electrostatic adsorption electrode 182, unlike the high-frequency electrode, even if power is supplied by a terminal, the current consumption is small, and there is little risk of non-uniformity of the local ion sheath or generation of hot spots.

[0065] The pedestal 100 for semiconductor substrate processing further includes a support base 190 that supports the ceramic base material 110, and it is preferable that the disk-shaped member 111 and the annular member 115 are concentrically arranged on the support base 190. Thereby, it becomes easier to independently control the high-frequency current to the disk-shaped member 111 and the annular member 115. Also, since the amount of heat input to the ceramic base material 110 is insulated by the support base 190, the surface temperature of the ceramic base material 110 is smoothed.

[0066] The support base 190 can be formed of an electrically insulating member. The ceramic base material 110 may or may not be fixed to the support base 190. The support base 190 may be formed with a structure such as a groove or a protrusion that defines the position of the disk-shaped member 111 or the annular member 115.

[0067] [Method of using the pedestal for semiconductor substrate processing] Next, an example of a method of using the pedestal for semiconductor substrate processing according to an embodiment of the present invention will be described. FIG. 4 is a schematic cross-sectional view showing a vacuum chamber and the pedestal for semiconductor substrate processing installed inside it. In an example of the method of using the pedestal for semiconductor substrate processing, first, a high-frequency power supply 1 is connected to the conductive film formed on the side surface of the disk-shaped member. Also, a high-frequency power supply 2 is connected to the annular member. Also, the counter electrode is grounded. Next, a substrate is placed on the substrate mounting surface of the disk-shaped insulating member. Next, by passing a high-frequency current through the high-frequency electrode 1 or 2, plasma discharge occurs between the counter electrode in the vacuum chamber, and a process is performed on the substrate. In FIG. 4, although the pedestal 100 for semiconductor substrate processing in FIG. 3 is grounded, the pedestal 100 for semiconductor substrate processing having the configuration of FIG. 1, FIG. 2, or other configurations may be installed.

[0068] Thus, the pedestal 100 for semiconductor substrate processing of the present invention can be applied to a process using plasma and is suitable for etching, film formation, etc. The high-frequency power supply may be applied to the counter electrode side, and in that case, the electrodes provided on the electrically insulating ceramic member or the disk-shaped ceramic base material are grounded.

[0069] [Manufacturing method of the pedestal for semiconductor substrate processing] Next, an example of a method for manufacturing a pedestal for semiconductor substrate processing according to an embodiment of the present invention will be described. FIG. 5 is a flowchart showing an example of a method for manufacturing a pedestal for semiconductor substrate processing according to an embodiment of the present invention. As shown in FIG. 5, the method for manufacturing a pedestal for semiconductor substrate processing according to an embodiment of the present invention includes a step of preparing a ceramic base material composed of a disk-shaped member and an annular member formed of ceramics containing SiC (step S1), and a step of forming an Al film on at least a part of the side surface of the disk-shaped member by a cold spray method (step S2).

[0070] Further, FIG. 6 is a flowchart showing an example of a method for manufacturing a pedestal for semiconductor substrate processing according to an embodiment of the present invention. As shown in FIG. 6, the method for manufacturing a pedestal for semiconductor substrate processing according to an embodiment of the present invention includes a step of preparing a ceramic base material composed of a disk-shaped member and an annular member formed of ceramics containing SiC (step T1), a step of forming an Al film on at least a part of the side surface of the disk-shaped member by a cold spray method (step T2), a step of forming a disk-shaped insulating member on one main surface of the disk-shaped member (step T3), and a step of forming an annular insulating member on one main surface of the annular member (step T4). Steps T1 and T2 are the same steps as steps S1 and S2, respectively. Either step T3 or step T4 may be performed first.

[0071] The flowcharts of FIGS. 5 and 6 show the characteristic flow of the manufacturing method of the present invention. The ceramic base material prepared in step S1 may be, for example, a ceramic base material manufactured by the following manufacturing method. Further, the disk-shaped insulating member formed in step T3 or the annular insulating member formed in step T4 may be a disk-shaped insulating member or an annular insulating member manufactured by the following manufacturing method.

[0072] Hereinafter, as a specific example, a method for manufacturing a pedestal for semiconductor substrate processing in the case where the ceramic base material is formed of a SiC ceramic sintered body and the ceramic insulating member is formed of an AlN ceramic sintered body will be described.

[0073] (Method for manufacturing a ceramic substrate) The ceramic substrate of the base for semiconductor substrate processing according to an embodiment of the present invention is produced, for example, by the molded body hot press method described below. Note that the manufacturing method of the ceramic substrate is not limited to this method, and for example, a powder hot press method, a conventional green sheet lamination method, or the like may be used. The powder hot press method is a method in which a heating resistor or an electrode is embedded inside the ceramics by alternately stacking a ceramic raw material powder and a predetermined heating resistor or electrode, and then it is uniaxially hot press fired.

[0074] The manufacturing method of the ceramic substrate of the base for semiconductor substrate processing according to an embodiment of the present invention by the molded body hot press method includes a ceramic molded body forming step, a ceramic degreased body manufacturing step, a firing step, a ceramic sintered body processing step, a disk-shaped member precursor bonding step, a ceramic substrate processing step, and a conductive film forming step. Note that in the following manufacturing method, the manufacturing method of the ceramic substrate in which a refrigerant flow path is formed in the disk-shaped member is described, but the refrigerant flow path may not be provided.

[0075] In the ceramic molded body forming step, for example, a plurality of ceramic molded bodies are formed from a ceramic raw material powder mainly composed of SiC (silicon carbide). A sintering aid may be added as necessary. For example, additives such as B4C, C, a binder, a plasticizer, and a dispersant of the sintering aid are appropriately added to the SiC ceramic raw material powder and mixed to produce a slurry, and granulated powder is granulated by a spray drying method or the like. Thereafter, the granulated powder can be pressure-molded to form a plurality of ceramic molded bodies. The ceramic molded body that becomes the disk-shaped member and the ceramic molded body that becomes the annular member are preferably separate ceramic molded bodies.

[0076] The SiC ceramic raw material powder is preferably of high purity, and its purity is preferably 99% or more, more preferably 99.9% or more. Also, the average particle size of the SiC ceramic raw material powder is preferably 0.1 μm or more and 1.0 μm or less.

[0077] The mixing method can be either wet or dry, and for example, mixers such as ball mills and vibration mills can be used. As the forming method, for example, known methods such as uniaxial pressing and cold isostatic pressing (CIP) can be used. Note that the method for forming the ceramic compact is not limited to pressure forming, and for example, green sheet lamination or casting molding can also be applicable. By appropriately degreasing or further pre-sintering these, a ceramic compact can be manufactured.

[0078] After forming, the shape of the ceramic compact may be adjusted by machining. Machining may be performed after degreasing.

[0079] In the ceramic degreasing body production process, a plurality of ceramic compacts are degreased at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of ceramic degreasing bodies. The ceramic compact is heat-treated, for example, at a temperature of 500°C or higher and 900°C or lower to become a ceramic degreasing body. The degreasing time is preferably 1 hour or longer and 120 hours or shorter. For degreasing, an air furnace or a nitrogen atmosphere furnace can be used, but an air furnace is preferred to remove the organic components of the binder.

[0080] In the firing process, the formed ceramic degreasing body is uniaxially pressure-fired or fired at normal pressure to form a plurality of ceramic sintered bodies. When performing uniaxial pressure firing, the pressure applied is preferably 4 MPa or higher. Also, the firing temperature is preferably 2000°C or higher and 2200°C or lower. The firing time is preferably 1 hour or longer and 12 hours or shorter, and more preferably 1 hour or longer and 5 hours or shorter. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but an atmosphere such as vacuum may also be used. Also, it may be an inert gas atmosphere after a vacuum atmosphere. As a result, a plurality of ceramic degreasing bodies are sintered respectively to become a plurality of SiC ceramic sintered bodies.

[0081] In the ceramic sintered body processing step, necessary processing is performed on one or more SiC ceramic sintered bodies respectively to form a plurality of disk-shaped member precursors. The plurality of disk-shaped member precursors are, for example, a disk-shaped member precursor that becomes a lid of a refrigerant flow path, a disk-shaped member precursor in which a part of the refrigerant flow path is formed, and the like. For example, grooves that will become refrigerant flow paths are formed in one or more SiC ceramic sintered bodies after joining. At this time, a refrigerant flow path may be formed by covering the grooves formed in one disk-shaped member precursor with another disk-shaped member precursor (SiC ceramic sintered body) as a lid. Also, a refrigerant flow path may be formed by combining the grooves formed in two disk-shaped member precursors respectively. According to such a method, refrigerant flow paths of various shapes can be formed. The annular member may be formed of one ceramic sintered body or a plurality of ceramic sintered bodies.

[0082] In the disk-shaped member precursor joining step, a plurality of disk-shaped member precursors are joined to produce a disk-shaped member. For the joining, either a joining method using a joining material or a joining method not using a joining material can be used.

[0083] First, the joining method using a joining material will be described. First, a joining material is prepared and applied to at least one of the end faces on the joining side of the disk-shaped member precursor. The end face on the joining side of the disk-shaped member precursor preferably has a surface roughness Ra of 1.6 μm or less, and more preferably is polished to 0.4 μm or less. The thickness of the joining material to be applied is preferably 5 μm or more and 30 μm or less.

[0084] Next, a plurality of disk-shaped member precursors are arranged and heated while applying pressure in the vertical direction to the upper surface. The pressure to be applied is preferably 5 kPa or more. Also, the heating temperature is preferably 1500 °C or more and 1800 °C or less. The heating time is preferably 0.5 hours or more and 5 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be an atmosphere such as a vacuum. Thereby, a plurality of disk-shaped member precursors can be joined to form a disk-shaped member having a refrigerant flow path inside.

[0085] The joining material can be any material as long as it can join the disk-shaped member precursors. For example, it may be a paste of a mixed powder containing at least B4C powder in SiC powder, which is the same main component as the disk-shaped member precursor. Also, it may be a paste containing 90 wt% or more of SiC and containing Si or B as necessary to adjust the temperature to become a molten liquid during joining.

[0086] Next, a joining method without using a joining material will be described. First, a plurality of disk-shaped member precursors are arranged. The end face on the joining side of the disk-shaped member precursor is preferably polished to a surface roughness Ra of 0.1 μm or less. Next, heating is performed while applying pressure in the direction perpendicular to the upper surface. Among the joining conditions, the pressure applied is preferably 4 MPa or more. Also, the heating temperature is preferably 1600 °C or more and 2000 °C or less. The heating time is preferably 0.5 hours or more and 6 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but an atmosphere such as a vacuum may also be used. Thereby, a plurality of disk-shaped member precursors can be joined to form a disk-shaped member having a refrigerant flow path inside.

[0087] In the method described above, the disk-shaped member precursors were formed of a ceramic sintered body and joined to form a disk-shaped member. However, the disk-shaped member precursors may be formed of a ceramic green body, joined, and sintered to produce a disk-shaped member. Also, when the structure such as the refrigerant flow path is simple, a disk-shaped member can be produced by processing a ceramic debound body, laminating, and sintering. When the structure such as the refrigerant flow path is complex or when high dimensional accuracy of the refrigerant flow path etc. is required, the method of joining ceramic sintered bodies is more preferable.

[0088] In the ceramic base material processing step, the outer shape of the ceramic base material is processed. The outer shape of the ceramic base material is the outer shape of the disk-shaped member and the outer shape of the annular member. Also, when a disk-shaped insulating member is used as an electrostatic chuck and terminals are used for its electrical connection etc. when necessary, a through hole etc. for connecting the terminals is drilled. Drilling of a through hole etc. for connecting the terminals may be performed before the disk-shaped member precursor joining step.

[0089] In the conductive film forming step, a conductive film is formed on at least a part of the side surface of the disk-shaped member. The conductive film may be formed on the entire side surface of the disk-shaped member. Also, for electrical connection, a conductive film may be formed on a part of the upper surface or the lower surface of the disk-shaped member. At this time, the conductive film formed on the upper surface or the lower surface is formed continuously with the conductive film on the side surface. Further, a conductive film (second conductive film) may be formed on the upper surface of the disk-shaped member as the first plasma generation part. A conductive film (third conductive film) may be formed on the upper surface of the annular member as the second plasma generation part. A conductive film (fourth conductive film) may be formed on the inner or outer side surface of the annular member as the power supply member. The material and thickness of the second conductive film, the third conductive film, or the fourth conductive film may be the same as or different from the material and thickness of the conductive film.

[0090] The conductive film is preferably formed by the cold spray method. The cold spray method enables film formation at normal temperature to a relatively low temperature and can suppress peeling of the conductive film from the ceramic substrate. Also, the conductive film is preferably an Al film with a purity of 99.8% or more. When forming an Al conductive film by the cold spray method, for example, it can be set in a wide range of purity of 99.7 to 99.99% and thickness of 100 to 2000 μm. The electrical conductivity of the conductive film can be adjusted by adjusting the purity of the raw material powder. Since a conductive film with high conductivity can function as a sufficient high-frequency conductor even with a thin film thickness, the film thickness may be adjusted according to the purity of the raw material powder. The conductive film can also be formed by the PVD method.

[0091] (Method for manufacturing a ceramic insulating member) When forming the ceramic insulating member of the base for semiconductor substrate processing according to the embodiment of the present invention with a ceramic sintered body, for example, it is produced by the molded body hot press method described below. Note that the manufacturing method of the ceramic insulating member is not limited to this method, and for example, the powder hot press method, the conventional green sheet lamination method, etc. may also be used.

[0092] The manufacturing method by the hot press method of the ceramic insulating member of the base for semiconductor substrate processing according to the embodiment of the present invention includes a ceramic green body forming step, a ceramic degreased body producing step, a firing step, and a ceramic sintered body processing step.

[0093] In the ceramic green body forming step, for example, a plurality of ceramic green bodies are formed from a ceramic raw material powder mainly composed of AlN (aluminum nitride). A sintering aid may be added as necessary. For example, additives such as Y2O3 as a sintering aid, a binder, a plasticizer, and a dispersant are appropriately added to the AlN ceramic raw material powder and mixed to produce a slurry, and the granulated powder is granulated by a spray drying method or the like. Thereafter, the granulated powder can be pressure molded to form a plurality of ceramic green bodies. It is preferable that the ceramic green body that becomes a disk-shaped insulating member and the ceramic green body that becomes an annular insulating member are separate ceramic green bodies.

[0094] The AlN ceramic raw material powder is preferably of high purity, and its purity is preferably 99% or more, more preferably 99.9% or more. Further, the average particle size of the AlN ceramic raw material powder is preferably 0.1 μm or more and 1.0 μm or less.

[0095] The mixing method and the molding method are the same as those of the above SiC ceramics. After molding, the shape of the ceramic green body may be adjusted by machining. When embedding an electrostatic adsorption electrode in the disk-shaped insulating member, a groove having a shape conforming to the shape of the electrostatic adsorption electrode may be formed on one side of the ceramic green body (the joint surface with the other ceramic green body). Machining may be performed after degreasing.

[0096] In the ceramic degreased body producing step, a plurality of ceramic green bodies are degreased at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of ceramic degreased bodies. The conditions of the ceramic degreased body producing step are also the same as those of the above SiC ceramics.

[0097] When using a disk-shaped insulating member as an electrostatic chuck, that is, when embedding an electrostatic adsorption electrode in the disk-shaped insulating member, an electrostatic adsorption electrode processed into a shape according to the design and use of the base for semiconductor substrate processing is prepared. The shape of the electrostatic adsorption electrode can be various shapes such as a mesh shape or a foil shape. Also, the material can be various materials such as molybdenum and tungsten. The electrostatic adsorption electrode and a plurality of ceramic degreased bodies are combined to form a laminate formed in a flat plate shape with the electrostatic adsorption electrode embedded therein.

[0098] In the firing process, the formed ceramic degreased body or laminate is uniaxially pressure-fired or fired at normal pressure to form a ceramic sintered body. When performing uniaxial pressure-firing, the pressure applied is preferably 1 MPa or more. Also, the firing temperature is preferably 1700 °C or more and 2000 °C or less. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but an atmosphere such as a vacuum may also be used. Thereby, one or more ceramic degreased bodies are sintered to become an AlN ceramic sintered body.

[0099] In the ceramic sintered body processing step, necessary processing such as external shape processing is performed on the AlN ceramic sintered body to form a ceramic insulating member.

[0100] (Bonding step) In the bonding step, an appropriate bonding method is selected according to the materials and CTE differences of the produced ceramic base material and the ceramic insulating member, and they are bonded. The bonding method is bonding with a brazing material containing a metal such as In, Al, Au, or bonding with an inorganic adhesive or an organic adhesive.

[0101] When bonding with a brazing material, the bonding surfaces of the ceramic base material and the ceramic insulating member preferably have a surface roughness Ra of 1.6 μm or less. Then, a brazing material is placed between the bonding surfaces of the ceramic base material and the ceramic insulating member, and they are bonded by heating to the melting point or glass transition point of the brazing material. The brazing material may be a thin film of a metal.

[0102] When joining with an inorganic adhesive or an organic adhesive, the joining surfaces of the ceramic substrate and the ceramic insulating member preferably have a surface roughness Ra of 1.6 μm or less. Then, an adhesive is disposed between the joining surfaces of the ceramic substrate and the ceramic insulating member, and they are joined by heating up to the glass transition point of the adhesive. When using an adhesive, it is preferable that a filler for enhancing thermal conductivity is added to the adhesive.

[0103] In this way, the base for semiconductor substrate processing according to the embodiment of the present invention can be manufactured.

[0104] As described above, according to the base for semiconductor substrate processing or the ceramic substrate of the present invention, the ion sheath at the outer peripheral portion of the substrate can be adjusted, and the occurrence of non-uniformity of the local ion sheath and hot spots caused by the conventional power supply terminals can be suppressed. Further, peeling and warping of the ceramic insulating member from the ceramic substrate can be suppressed, and a stable structure can be obtained. Further, the manufacturing method of the present invention can manufacture such a base for semiconductor substrate processing.

[0105] The present invention is not limited to the above-described embodiment, and it goes without saying that the present invention extends to various modifications and equivalents included in the spirit and scope of the present invention. Further, the structures, shapes, numbers, positions, sizes, etc. of the constituent elements shown in each drawing are for convenience of explanation and can be changed as appropriate.

Description of Reference Numerals

[0106] 100 Base for semiconductor substrate processing 110 Ceramic substrate 111 Disk-shaped member 112 Side surface of the disk-shaped member 113 One main surface of the disk-shaped member 115 Annular member 116 Side surface of the annular member 117 One main surface of the annular member 119 Refrigerant flow path 120 Conductive film 122 Second conductive film 123 Third conductive film 124 Fourth conductive film 130 Power supply member 132 Terminal 140 Ceramic insulating member 141 Disk-shaped insulating member 145 Annular insulating member 150 First plasma generation part 160 Second plasma generation part 170 Adhesive layer 180 Electrostatic chuck 182 Electrode for electrostatic adsorption 190 Support table

Claims

1. A pedestal for semiconductor substrate processing, comprising: a ceramic base material composed of a disk-shaped member and an annular member disposed outside the disk-shaped member; a conductive film formed on a side surface of the disk-shaped member; a power supply member formed on the annular member; a ceramic insulating member composed of a disk-shaped insulating member formed on one main surface of the disk-shaped member and an annular insulating member formed on one main surface of the annular member; a first plasma generation unit provided on one main surface side of the disk-shaped member and electrically connected to the conductive film; a second plasma generation unit provided on one main surface side of the annular member or inside the annular insulating member and electrically connected to the power supply member, wherein the pedestal for semiconductor substrate processing is characterized by comprising the above components.

2. The pedestal for semiconductor substrate processing according to claim 1, wherein the ceramic base material is formed of a ceramic having a thermal conductivity of 70 W / mK or more.

3. The pedestal for semiconductor substrate processing according to claim 1, wherein the ceramic base material is formed of a ceramic containing SiC.

4. The pedestal for semiconductor substrate processing according to any one of claims 1 to 3, wherein the ceramic insulating member is formed of a ceramic sintered body or a ceramic sprayed film.

5. The ceramic insulating member is formed of a ceramic sintered body, the ceramic insulating member is adhered to the ceramic base material by an organic adhesive, and the thickness of the layer of the organic adhesive is 100 μm or less. The pedestal for semiconductor substrate processing according to any one of claims 1 to 3 is characterized by the above.

6. The ceramic insulating member is made of ceramics mainly composed of AlN or Al ２ O ３ The substrate processing base for semiconductors according to claim 4, characterized in that it is formed of ceramics mainly composed of the above.

7. The pedestal for semiconductor substrate processing according to claim 4, wherein the disk-shaped insulating member is an electrostatic chuck in which an electrode for electrostatic adsorption is embedded.

8. The pedestal for semiconductor substrate processing according to claim 4, wherein the conductive film is an Al film having a purity of 99.8% or more.

9. The ceramic base material is formed of a conductive ceramic, the first plasma generation unit is one main surface of the disk-shaped member, and the second plasma generation unit is one main surface of the annular member. The pedestal for semiconductor substrate processing according to claim 1 is characterized by the above.

10. The first plasma generation unit is a second conductive film formed on one main surface side of the disk-shaped member. The second plasma generation part is a third conductive film formed on one main surface side of the annular member, and the semiconductor substrate processing base according to claim 1 is characterized in this.

11. The power supply member is a fourth conductive film formed on the inner or outer side surface of the annular member, and the semiconductor substrate processing base according to claim 1 is characterized in this.

12. It further includes a support base for supporting the ceramic base material, The disk-shaped member and the annular member are concentrically arranged on the support base, and the semiconductor substrate processing base according to claim 1 is characterized in this.

13. A disk-shaped member with an Al film formed on its side surface, And an annular member arranged outside the disk-shaped member, The disk-shaped member and the annular member are made of ceramics with a thermal conductivity of 70 W / mK or more, and the ceramic base material is characterized in this.

14. A step of preparing a ceramic base material composed of a disk-shaped member and an annular member made of ceramics containing SiC, And a step of forming an Al film on at least a part of the side surface of the disk-shaped member by a cold spray method, and the manufacturing method of the semiconductor substrate processing base is characterized in including these.

15. A step of forming a disk-shaped insulating member on one main surface of the disk-shaped member, And a step of forming an annular insulating member on one main surface of the annular member, and the manufacturing method of the semiconductor substrate processing base according to claim 14 is characterized in further including these.

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