Wavelength conversion component and light-emitting device

Abstract

To provide a wavelength conversion component which reduces a temperature quenching phenomenon of phosphors, and a light-emitting device comprising the same.SOLUTION: A wavelength conversion component disclosed herein has a single crystal substrate and a wavelength conversion member, wherein the wavelength conversion member is a multilayer film including a first inorganic solid phosphor single crystal film, and an inorganic solid single crystal film or a second inorganic solid phosphor single crystal film of a type different from the first inorganic solid phosphor single crystal film.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a wavelength conversion component and a light emitting device. [Background technology]

[0002] Conventionally, light-emitting devices capable of irradiating excitation light emitted from a light-emitting diode or a semiconductor laser element onto a light-emitting body containing particles made of a phosphor material to output visible light have been disclosed, for example, in Patent Documents 1 and 2. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-109674 [Patent Document 2] Japanese Patent Publication No. 2022-038104 Summary of the Invention [Problem to be solved by the invention]

[0004] As the output of excitation light increases, the amount of heat generated by phosphor materials increases due to the Stokes shift, which is the energy loss that occurs when short-wavelength light with high energy per photon is converted into long-wavelength light with low energy per photon.

[0005] When heat accumulates inside a phosphor material and its temperature rises, a phenomenon known as thermal quenching occurs, in which the efficiency of wavelength conversion of excitation light decreases. This phenomenon is particularly pronounced in phosphor materials in which numerous phosphor crystal particles are bound together with a transparent resin binder. This occurs because the resin binder, which has a lower thermal conductivity than the phosphor crystal particles, exists between the phosphor crystal particles, impeding heat conduction between the phosphor crystal particles.

[0006] In addition, when the phosphor material is an aggregate of a large number of phosphor crystal particles, the presence of voids between the particles and grain boundaries hinders heat conduction. Further, when the phosphor material is bonded to a translucent substrate, if the translucent substrate is an aggregate of a large number of particles, when the heat generated in the phosphor material is transmitted to the substrate and conducted through the inside thereof, the presence of voids between the particles and grain boundaries hinders heat conduction.

[0007] An object of the present disclosure is to provide a wavelength conversion component that reduces the temperature quenching phenomenon of a phosphor, and a light emitting device including the wavelength conversion component.

Means for Solving the Problems

[0008] The wavelength conversion component according to an embodiment of the present disclosure has a single crystal substrate and a wavelength conversion member, and the wavelength conversion member is a multilayer film including a first inorganic solid phosphor single crystal film and a second inorganic solid phosphor single crystal film different in type from the inorganic solid single crystal film or the first inorganic solid phosphor single crystal film.

[0009] The wavelength conversion component according to an embodiment of the present disclosure has a single crystal substrate and a wavelength conversion member, and the wavelength conversion member includes a first portion of an inorganic solid phosphor single crystal and a second portion of an inorganic solid single crystal, and the first portion and the second portion form a two-dimensional photonic crystal.

[0010] The wavelength conversion component according to an embodiment of the present disclosure has a single crystal substrate and a wavelength conversion member, and the wavelength conversion member includes a first portion of an inorganic solid phosphor single crystal, a second portion of an inorganic solid single crystal, and a third portion of an inorganic solid single crystal film, the first portion and the second portion form a film, the first portion and the second portion are alternately arranged in a direction perpendicular to the thickness direction of the film, and the wavelength conversion component has one or more pairs of layers composed of the film and the third portion.

[0011] The light emitting device according to an embodiment of the present disclosure includes a solid light emitting element that emits excitation light and the wavelength conversion component according to an embodiment of the present disclosure that absorbs the excitation light.

Advantages of the Invention

[0012] According to an embodiment of the present disclosure, it is possible to provide a wavelength conversion component that reduces the temperature quenching phenomenon of a phosphor, and a light-emitting device including the wavelength conversion component.

Brief Description of the Drawings

[0013]

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[0014] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "upper," "lower," and other terms including these terms) will be used as necessary. However, the use of these terms is intended to facilitate understanding of the invention with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present invention. Furthermore, parts that appear with the same reference numerals in multiple drawings indicate the same or equivalent parts or members.

[0015] Furthermore, the embodiments shown below are intended to exemplify wavelength conversion components and the like to embody the technical concept of the present invention, and are not intended to limit the present invention thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the components described below are intended for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, the content described in the first embodiment can also be applied to other embodiments and modified examples. Furthermore, the size and positional relationships of components shown in the drawings may be exaggerated for clarity. Furthermore, to avoid overly complex drawings, schematic diagrams may be used in which some elements are omitted, or end views may be used as cross-sectional views showing only the cut surface.

[0016] First Embodiment FIG. 1 is a conceptual diagram of a light-emitting device according to a first embodiment. As shown in FIG. 1, the light-emitting device 100 according to the first embodiment includes a light-emitting element 10, a power supply 80 for driving the light-emitting element, a plate-shaped wavelength conversion component 20 containing a phosphor mounted on a support base 40, a light-shielding member 50, an optical element 60, a heat sink 70, and a housing 90. In FIG. 1, light rays are represented by two-dot chain lines. The light-emitting device 100 emits light that is a mixture of light emitted from the light-emitting element 10 and reflected by the wavelength conversion component 20 and light emitted from the wavelength conversion component 20. The wavelengths of the light emitted from the wavelength conversion component 20 include wavelengths that are different from the wavelength of the light emitted from the light-emitting element 10.

[0017] Each component of the light emitting device 100 will now be described.

[0018] (light-emitting element) The light emitting element 10 is, for example, a laser diode incorporating an edge-emitting AlInGaN laser diode chip with electrodes on the bottom and top surfaces, and can emit blue laser light (for example, a wavelength of 440 nm) when energized. The light emitting element 10 is disposed away from the support base 40, and the light emitted by the light emitting element 10 is used as excitation light for the wavelength conversion component 20 placed on the support base 40.

[0019] The light-emitting element 10 is not limited to a laser diode (semiconductor laser), and solid-state light-emitting elements such as light-emitting diodes and superluminescent diodes can be suitably used. The number of light-emitting elements 10 is not limited to one, and may be multiple. In addition, although the light-emitting element 10 is disposed away from the support base 40 in FIG. 1 , the light-emitting element 10 may be disposed on the support base 40 so that light emitted from the light-emitting element 10 can irradiate the wavelength conversion component 20.

[0020] (Support stand) The support base 40 supports the wavelength conversion component 20. The material of the support base 40 is, for example, copper (thermal conductivity 398 W / (m·K)). The material of the support base 40 is not limited to copper, and may be a metal material such as copper alloy, aluminum, or aluminum alloy, or a material mainly containing ceramic such as SiC, SiN, or AlN. The support base 40 preferably has a thermal conductivity higher than that of the wavelength conversion component 20. This is to efficiently dissipate heat from the wavelength conversion component 20 to the outside. The support base 40 may have wiring, cooling water channels, or heat pipes inside, and may be attached to a heat sink 70 such as a heat dissipation fin.

[0021] (wavelength conversion components) FIG. 2 is a plan view concept of the wavelength conversion component 20 placed on the support base 40 in the first embodiment. FIG. 3 is a cross-sectional view concept taken along line III-III of FIG. 2. FIG. 4 is a partially enlarged cross-sectional view concept of the wavelength conversion component 20 in the first embodiment. As shown in FIGS. 2 to 4, the wavelength conversion component 20 is plate-shaped and is joined to the upper surface of the support base 40 via the bonding material 30. The wavelength conversion component 20 absorbs at least a part of the light emitted from the light emitting element 10 as excitation light and emits light having a wavelength different from that of the excitation light. The wavelength-converted light is emitted from the top surface of the wavelength conversion component 20 facing the joint surface with the support base 40.

[0022] The wavelength conversion component 20 has a single crystal substrate 21 and a wavelength conversion member 22. In the example shown in FIG. 3, in the wavelength conversion component 20, the wavelength conversion member 22 side is attached onto the support base 40 via the bonding material 30. The wavelength conversion component 20 is of a reflective type, and the main surface that is the incident surface of the excitation light and the surface that emits light having a wavelength different from that of the excitation light are the same main surface. That is, the main surface on the substrate 21 side of the wavelength conversion component 20 is the incident surface of the excitation light and is also the surface that emits light having a wavelength different from that of the excitation light. The light wavelength-converted by the wavelength conversion member 22 is emitted from the main surface on the substrate 21 side. The main surface on the wavelength conversion member 22 side of the wavelength conversion component 20 may be provided with an optical thin film to enhance the reflectance of the excitation light and the wavelength-converted light.

[0023] In FIG. 3, when the substrate 21 also functions as a window member and the top surface of the wavelength conversion component 20 is the main surface on the substrate 21 side, the side surface of the wavelength conversion component 20 and the main surface (bottom surface) on the wavelength conversion member 22 side are covered with a light reflection member that constitutes a part of the light shielding member 50. It is preferable that the side surface and the bottom surface of the wavelength conversion component 20 are smooth in terms of enhancing the light reflectance at the interface with the light reflection member included in the light shielding member 50.

[0024] Note that in the wavelength conversion component 20, the main surface on the substrate 21 side may be the joint surface with the support base 40. In this case, the side surface of the wavelength conversion component 20 and the main surface (bottom surface) on the substrate 21 side are covered with a light reflection member. The wavelength conversion component 20 has the substrate 21 side attached onto the support base 40, and the wavelength-converted light is emitted from the main surface on the wavelength conversion member 22 side.

[0025] In the first embodiment, the wavelength conversion component 20 is a reflective type, but it may be a transmissive type as shown in other embodiments. In the transmissive wavelength conversion component 20, the incident surface of the excitation light and the surface that emits light having a wavelength different from that of the excitation light are different main surfaces facing each other. When the main surface on the substrate 21 side is the incident surface of the excitation light, the main surface on the wavelength conversion member 22 side becomes the surface that emits light having a wavelength different from that of the excitation light. Conversely, when the main surface on the wavelength conversion member 22 side is the incident surface of the excitation light, the main surface on the substrate 21 side becomes the surface that emits light having a wavelength different from that of the excitation light. It is preferable that an optical thin film is provided on the main surface of the wavelength conversion component 20 to increase the reflectance or transmittance of the excitation light and / or the wavelength-converted light depending on the usage method.

[0026] (Substrate) The substrate 21 is, for example, a plate-shaped transparent yttrium aluminum garnet (Y3Al5O 12 (YAG)) single crystal (the Miller index of the main surface is (100), and the plate thickness is 150 μm). An optical thin film may be provided on the main surface on the substrate 21 side of the wavelength conversion component 20 to increase the transmittance of the excitation light and / or the wavelength-converted light. The substrate 21 is not limited to a transparent YAG single crystal, and single crystals having a bandgap energy larger than the energy per photon of the excitation light, such as corundum (sapphire, α-Al2O3) single crystals, can also be used.

[0027] (Wavelength conversion member) The wavelength conversion member 22 is a multilayer film including a first inorganic solid phosphor single crystal film 221 and a second inorganic solid phosphor single crystal film 222 of a different type from the first inorganic solid phosphor single crystal film 221.

[0028] Specifically, the wavelength conversion member 22 is a multilayer film (thickness 40 μm) including, for example, a Ce-doped lutetium aluminum garnet single crystal film (Ce:LuAG crystal film) (thickness 30 μm) as the first inorganic solid phosphor single crystal film 221, and an Eu-doped lutetium aluminum garnet single crystal film (Eu:LuAG crystal film) (thickness 10 μm) as the second inorganic solid phosphor single crystal film 222 formed thereon.

[0029] The number of types of inorganic solid phosphor single crystal films contained in the wavelength conversion member 22 is not limited to two, and may be three or more. Furthermore, as shown in yet another embodiment, the wavelength conversion member 22 may include an inorganic solid single crystal film that serves as a window member.

[0030] The thermal conductivity of the transparent YAG single crystal of the base 21 (13.4 W / (m·K)) is greater than the thermal conductivity of the LuAG single crystal of the wavelength converting member 22 (8.3 W / (m·K)).

[0031] The wavelength conversion member 22 is preferably made of an inorganic solid phosphor single crystal, which is resistant to deterioration due to temperature rise. When the wavelength conversion member 22 is made of a single crystal film, it has no pores or grain boundaries, and therefore has higher thermal conductivity and better mechanical properties than polycrystals. Examples of LuAG single crystals include rare earth aluminate crystals, which are very stable chemically and thermally. They have a composition represented by the following formula (I):

[0032] (Ln 1-n M2 n )3(Al 1-m M1 m )5O 12 (I) In formula (I), Ln is at least one rare earth element selected from the group consisting of Y, La, Lu, Gd, and Tb; M1 is at least one element selected from Ga and Sc; M2 is an activator component and is at least one element selected from Ce, Eu, Nd, Yb, Pr, and Cr; and m and n are in the ranges of 0≦m≦0.02 and 0. <n<0.1を満たす数である。

[0033] (Method for manufacturing wavelength conversion components) Liquid phase growth is known as a method for producing inorganic solid single crystals, and from an ingot of liquid-phase grown inorganic solid single crystal, a plate of transparent inorganic solid single crystal that will serve as the substrate 21 or a plate of inorganic solid phosphor single crystal that will serve as the wavelength conversion member 22 can be cut out. The method for producing the plate of inorganic solid single crystal is not limited to liquid phase growth, and vapor phase growth may also be used.

[0034] The wavelength conversion component 20 can be obtained by directly bonding a transparent single crystal plate that serves as the substrate 21 and a plate of an inorganic solid phosphor single crystal that serves as the wavelength conversion member 22, followed by grinding and polishing to a desired thickness. Here, direct bonding refers to bonding without using a bonding agent such as an adhesive between the members to be bonded. It is also possible to directly bond a plurality of inorganic solid phosphor single crystal plates that serve as the wavelength conversion member 22. Direct bonding can be performed, for example, by irradiating the bonding surfaces of the inorganic solid phosphor single crystal and the transparent inorganic solid single crystal with an argon beam in a vacuum, then bringing the bonding surfaces into contact with each other and bonding them under load, or by irradiating each bonding surface with plasma, bonding them in the atmosphere, and then heating them.

[0035] Conventional methods for obtaining inorganic solid phosphor ceramic plates, which are aggregates of inorganic solid phosphor crystal grains, require numerous steps, such as preparing powder raw materials for the inorganic solid phosphor, molding the powder, firing the molded body, slicing the fired body, and polishing the fired plate.

[0036] On the other hand, by using the laser CVD method (see, for example, WO2023 / 017845), which is a chemical vapor deposition method, it is possible to epitaxially form an inorganic solid phosphor single crystal film, particularly a metal oxide phosphor single crystal film, which serves as the wavelength conversion member 22, on a transparent single crystal plate material which serves as the substrate 21. The laser CVD method has a fast film formation speed and a large segregation coefficient, so it is possible to increase the dopant (M2: activator component such as Ce or Eu) concentration more than with liquid phase growth methods. By controlling the growth time and the amount of raw material gas supplied, it is possible to form a uniform thin film, and the resulting shape is a flat plate, which is excellent for mass production as a plate-shaped wavelength conversion component 20.

[0037] When growing a metal oxide phosphor crystal film, such as a LuAG crystal film, using an organometallic material as part of the raw material by laser CVD method, while supplying Lu raw material gas (e.g., tris(dipivaloylmethanato)lutetium vapor and carrier gas (e.g., Ar gas)), Al raw material gas (e.g., tris(dipivaloylmethanato)aluminum vapor and carrier gas), and oxygen gas (O2) into the reaction chamber, if the valve provided in the pipe connecting the Ce raw material container and the reaction chamber is closed to stop the supply of Ce raw material gas (e.g., tetrakis(dipivaloylmethanato)cerium vapor and carrier gas) into the reaction chamber, a Ce:LuAG crystal film will grow. Then, by stopping the supply of Ce raw material gas and opening the valve provided in the pipe connecting the Eu raw material container and the reaction chamber to start the supply of Eu raw material gas (e.g., tetrakis(dipivaloylmethanato)europium vapor and carrier gas) into the reaction chamber, it is possible to easily switch from the growth of the Ce:LuAG crystal film to the growth of the Eu:LuAG crystal film.

[0038] (Light shielding member and light reflecting member) The light reflecting member disposed adjacent to the wavelength conversion component 20 at a part of the light shielding member 50 in FIG. 3 is, for example, a metal multilayer film including a silver (Ag) film. When joining the metal multilayer film disposed adjacent to the bottom surface of the wavelength conversion component 20 and the support base 40 using solder as the bonding material 30, the metal multilayer film preferably includes a barrier layer to prevent a decrease in the light reflectance at the bottom surface on the wavelength conversion member side due to the reaction with the solder. The barrier layer includes, for example, metals such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or alloys of the above materials.

[0039] As the light reflecting member, a metal film such as Ag or Al, a dielectric multilayer film, white cement, a white heat-resistant inorganic adhesive, a white resin, etc. can be used. A metal film with a high light reflectance and a large thermal conductivity can be preferably used as the light reflecting member.

[0040] The light shielding member 50 may include a dark-colored light absorption member in order to enhance the contrast between the light emitting surface and other regions.

[0041] (Bonding between the wavelength conversion component and the support base) The wavelength conversion component 20 and the support base 40 can be bonded using a bonding material 30. The bonding material 30 is, for example, a gold-tin (Au-Sn) solder with 20 wt% Sn. The Au-Sn solder has a eutectic point at 20 wt% Sn (melting point 280°C) and 90 wt% Sn (melting point 217°C), and is suitable because the bond can be maintained even when the temperature of the wavelength conversion component 20 rises to about 200°C. In particular, the Au-Sn solder with 20 wt% Sn has a thermal conductivity of about 57 W / (m·K), so it can be suitably used as the bonding material 30 between the wavelength conversion component 20 and the support base 40.

[0042] Also, for example, a sintered body obtained by sintering a metal paste containing fine metal particles can be used as the bonding material 30 for bonding. The size of the fine metal particles is, for example, nano-size and micron-size, and the metal particles are, for example, silver particles or copper particles. By appropriately setting the sintering conditions, a sintered body having a thermal conductivity of 100 W / (m·K) or more can be obtained. Since silver has a higher reflectivity for visible light than copper, a silver sintered body is more preferably used as the bonding material.

[0043] The white heat-resistant inorganic adhesive and white resin exemplified as the light reflection member can also be used as the bonding material 30 for bonding the wavelength conversion component 20 and the support base 40.

[0044] (Other components) An optical element 60 such as a lens, a radiator 70, or a fan for cooling the light-emitting element driving power source 80, etc. may be provided outside the main surface of the wavelength conversion component 20.

[0045] The power supply to the light-emitting element driving power source 80 is performed from an external power source such as a commercial power supply, a power generation device, various batteries, etc.

[0046] (Function and effect) Because the wavelength conversion member 22 includes an inorganic solid phosphor single crystal film, there are no interparticle voids or grain boundaries that hinder heat conduction inside the wavelength conversion member 22, and heat is conducted efficiently inside the wavelength conversion member 22, suppressing a rise in temperature of the wavelength conversion member 22. This makes it possible to reduce the temperature quenching phenomenon in which the efficiency of wavelength conversion of excitation light in the wavelength conversion member 22 decreases, and as a result, the light output of the light emitting device 100 can be improved.

[0047] When wavelength conversion member 22 is directly bonded to base 21 made of an inorganic solid single crystal plate material, the thermal conductivity of base 21 is greater than that of wavelength conversion member 22, and therefore heat generated in wavelength conversion member 22 is easily transferred to base 21. Furthermore, there are no interparticle voids or grain boundaries inside base 21 that would hinder heat conduction, and heat conduction inside base 21 is more efficient than inside wavelength conversion member 22, suppressing a temperature rise in wavelength conversion member 22. This reduces the temperature quenching phenomenon in wavelength conversion member 22, and as a result, the light output of light emitting device 100 can be improved.

[0048] By using a material having a thermal conductivity higher than that of the wavelength conversion component 20 for the support base 40, which serves as a heat dissipation path from the wavelength conversion component 20, and for the bonding material 30 between the wavelength conversion component 20 and the support base 40, it is possible to improve the heat dissipation from the wavelength conversion component 20 and suppress the temperature rise of the wavelength conversion component 22. This reduces the temperature quenching phenomenon of the wavelength conversion component 22, and as a result, it is possible to realize an improvement in the light output of the light emitting device 100.

[0049] The light emitted from a conventional plate made of sintered phosphor crystal particles tends to have a wide light distribution, such as a Lambertian distribution, due to scattering by the particles. If the light emitted from the wavelength conversion component 20 has a wide light distribution, the light will contain a large amount of unused light that does not enter the optical element 60, reducing the utilization efficiency of the light emitted from the wavelength conversion component 20.

[0050] The wavelength conversion member 22 containing the inorganic solid phosphor single crystal film of the present disclosure and the inorganic solid single crystal plate base 21 have very few grain boundaries and voids, which reduces light scattering due to grain boundaries and voids and reduces the spread of excitation light, making it possible to provide a light-emitting device with high brightness.

[0051] The single-crystal film of the wavelength conversion member 22 is uniform and thin, for example, with a film thickness of 100 μm or less, and is bonded to the support base 40 via a metal multilayer film disposed on the bottom surface of the wavelength conversion member 22 side. In this case, when irradiated with excitation light, the wavelength conversion member 22 generates heat in the area irradiated with the excitation light but not outside the irradiated area. However, since the heat generated by the wavelength conversion member 22 is quickly dissipated to the support base 40, heat is less likely to accumulate in the single-crystal film of the wavelength conversion member 22. Furthermore, since the base 21 reinforces the mechanical strength of the wavelength conversion member 20 and the wavelength conversion member 20 is firmly bonded to the support base 40, distortion and cracking are less likely to occur in the single-crystal film of the wavelength conversion member 22. Furthermore, since the single-crystal film of the wavelength conversion member 22 is uniform and thin, there is little color unevenness, and yellow rings are less likely to occur when light emitted from the light emitting device 100 is irradiated onto a screen.

[0052] When the wavelength converting member 22 includes two or more inorganic solid phosphor single crystal films with different emission wavelengths, for example, a yellow-emitting phosphor single crystal film and a red-emitting phosphor single crystal film, it is possible to emit illumination light with high color rendering. In the first embodiment, when the base 21 is a transparent YAG single crystal and the wavelength converting member 22 is a multilayer film made of a Ce:LuAG single crystal film and an Eu:LuAG single crystal film, the Ce:LuAG single crystal film is a yellow-emitting phosphor single crystal film and the Eu:LuAG single crystal film is a red-emitting phosphor single crystal film.

[0053] In the first embodiment, when the base 21 is a transparent YAG single crystal and the wavelength conversion member 22 is a multilayer film made of a Ce:LuAG single crystal film and an Eu:LuAG single crystal film, the difference in linear expansion coefficient between the base 21 and the wavelength conversion member 22 is small, so even if the output of the excitation light is increased, warping caused by the difference in thermal expansion between the base 21 and the wavelength conversion member 22 generated by the heat generated by the wavelength conversion component 20 can be reduced.

[0054] Second Embodiment Fig. 5 is a conceptual plan view of a light emitting device in the second embodiment. Fig. 6 is a conceptual cross-sectional view taken along line VI-VI of Fig. 5. As shown in Fig. 6, a light emitting device 200 in the second embodiment includes a light emitting element 10, a plate-shaped wavelength conversion component 20, and a light-shielding member 50 including a light-reflecting member on the upper surface of a support base 40. The side surfaces of the light emitting element 10 and the wavelength conversion component 20 are covered with the light-reflecting member that constitutes the light-shielding member 50.

[0055] In FIG. 6, the support 40 is made of a material primarily composed of AlN ceramic and has a mounting area for the light emitting element 10. Specifically, the support 40 has a plate 41 made of AlN ceramic (thermal conductivity 180 W / (m·K)) and wiring 42 electrically connected to the light emitting element 10, the wiring 42 including upper surface wiring 421, lower surface wiring 423, and vias 422 electrically connecting the two. The support 40 may further have a heat sink made of a metal member. The support 40 is not limited to a material primarily composed of AlN ceramic, and may be made of a material primarily composed of other ceramics such as SiC or SiN.

[0056] In Fig. 6, the light-emitting element 10 is an AlInGaN-based light-emitting diode with a flip-chip structure and a sapphire substrate, which can emit ultraviolet light or blue light when energized. In Fig. 6, the light-emitting element 10 includes a sapphire substrate as a growth substrate for the AlInGaN semiconductor multilayer film, but this is not limiting, and the growth substrate may be removed. The light-emitting element 10 has an electrode placement surface facing the mounting area of the support base 40, and the surface opposite the electrode placement surface is the mounting surface for the wavelength conversion component 20. The surface of the wavelength conversion component 20 facing the base 21 is bonded to the surface of the light-emitting element 10 facing the electrode placement surface.

[0057] The support base 40 and the light emitting element 10 can be joined using an appropriate conductive adhesive such as solder or plating, or can be joined directly.

[0058] In FIG. 6, the light emitting element 10 is configured by one light emitting diode, but the light emitting element 10 may be configured by arranging a plurality of light emitting diodes in parallel.

[0059] 7 is a partially enlarged conceptual diagram of a cross section of a wavelength conversion component 20 in the second embodiment. The wavelength conversion component 20 has a single crystal substrate 21 and a wavelength conversion member 22. In the second embodiment, the shape and size of the wavelength conversion component 20 are substantially the same as those of the light emitting element 10 in plan view.

[0060] The base 21 is, for example, a transparent YAG single crystal plate. The wavelength conversion member 22 is a multilayer film including a first inorganic solid phosphor single crystal film 221, a second inorganic solid phosphor single crystal film 222, and a window member 223 which is an inorganic solid single crystal film.

[0061] Specifically, the wavelength conversion member 22 includes a second inorganic solid phosphor single crystal film 222 epitaxially formed on the base 21, a first inorganic solid phosphor single crystal film 221, and an inorganic solid single crystal film window member 223. The first inorganic solid phosphor single crystal film 221 is, for example, a Ce:LuAG single crystal film. The second inorganic solid phosphor single crystal film 222 is, for example, a Eu:LuAG single crystal film. The window member 223 is, for example, a transparent YAG single crystal film.

[0062] The number of types of inorganic solid phosphor single crystal films included in the wavelength conversion member 22 is not limited to two, and may be three or more types. Alternatively, the number of types of inorganic solid phosphor single crystal films included in the wavelength conversion member 22 may be one type.

[0063] 6, the light-shielding member 50 including the light-reflecting member includes, for example, a dielectric multilayer film and white cement. Note that the light-shielding member 50 can also be made by combining it with other materials, such as a white heat-resistant inorganic adhesive or a white resin. The light-shielding member 50 may further include a cement colored, for example, black, or a resin containing a heat-dissipating filler on the outside. This is to increase the contrast with the light-emitting surface when light is emitted.

[0064] (Other parts) In the second embodiment, the light emitting device 200 may include optical elements such as a light diffusion plate and a lens on the outside of the window member 223, and a power source for driving the light emitting element 10.

[0065] (Method of manufacturing window components) A transparent single crystal plate material that will become the window member 223 and a plate material that will become the first inorganic solid phosphor single crystal film 221 can be directly bonded to form a window structure.

[0066] According to the laser CVD method, which is a vapor phase growth method, the second inorganic solid phosphor single crystal film 222 and the first inorganic solid phosphor single crystal film 221 are epitaxially formed on a transparent single crystal plate material that serves as the base 21, and then a transparent single crystal film that serves as the window member 223 can be epitaxially formed on the first inorganic solid phosphor single crystal film 221.

[0067] (Joining wavelength conversion components and light emitting elements) The wavelength conversion component 20 and the light emitting element 10 can be joined using an optical path coupling adhesive that has good optical transparency and refractive index matching. Alternatively, the wavelength conversion component 20 and the light emitting element 10 can be joined by direct bonding.

[0068] (Action and effect) The wavelength conversion member 22 includes a plurality of inorganic solid phosphor single crystal films and one inorganic solid single crystal film. Therefore, there are no interparticle voids or grain boundaries that hinder heat conduction inside the wavelength conversion member 22, and heat conduction inside the wavelength conversion member 22 is efficient, suppressing temperature rise in the wavelength conversion member 22. This reduces the thermal quenching phenomenon in the wavelength conversion member 22, thereby improving the light output of the light emitting device 100. Note that the same effects as above can be achieved even when the wavelength conversion member 22 includes one inorganic solid phosphor single crystal film and one inorganic solid single crystal film.

[0069] The second inorganic solid phosphor single crystal film 222 and the first inorganic solid phosphor single crystal film 221 are directly bonded to a substrate 21 made of a plate material of an inorganic solid single crystal and a window member 223. Since the thermal conductivities of the substrate 21 and the window member 223 are greater than those of the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222, the heat generated in the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222 easily moves to the substrate 21 and the window member 223. Further, there are no inter-particle voids or grain boundaries that impede heat conduction inside the substrate 21 and inside the window member 223, and heat conduction inside the substrate 21 and inside the window member 223 is more efficient than inside the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222, suppressing the temperature rise of the wavelength conversion member 22. Therefore, the temperature quenching phenomenon of the wavelength conversion member 22 can be reduced, and as a result, an improvement in the light output of the light emitting device 100 can be achieved.

[0070] When the light emitting device 200 is driven, the heat generated from the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222 due to the irradiation of excitation light from the light emitting element 10 is dissipated not only to the side surfaces of the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222, but also to the surroundings including the support base 40 via the substrate 21 and the window member 223. Heat is dissipated from the side surfaces of the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222 to the support base 40 and the surrounding atmosphere via the light shielding member 50, from the substrate 21 to the support base 40 and the surrounding atmosphere via the light emitting element 10 or the light shielding member 50, and from the window member 223 to the surrounding atmosphere directly or via the light shielding member 50 to the support base 40 and the surrounding atmosphere.

[0071] Also, by using a material having the same linear expansion coefficient as that of the substrate 21 for the window member 223, warping due to thermal expansion of the wavelength conversion component 20 when the first inorganic solid phosphor single crystal film 221 and the second inorganic solid phosphor single crystal film 222 generate heat can be reduced.

[0072] Since the shape and size of the wavelength conversion component 20 are substantially the same as those of the light emitting element 10 in plan view, the excitation light irradiation region becomes the entire wavelength conversion member 22, and problems such as distortion and cracking in the single crystal film due to the temperature difference between the excitation light irradiation region and the non-irradiation region are less likely to occur.

[0073] (Third Embodiment) The light emitting device according to the third embodiment of the present disclosure is the same as that of the first embodiment except for the wavelength conversion component 20.

[0074] FIG. 8 is a plan conceptual diagram of the wavelength conversion component 20 in the third embodiment. In FIG. 8, the upper side is an overall conceptual diagram, and the lower side is a partially enlarged conceptual diagram. FIG. 9 is a cross-sectional conceptual diagram taken along line IX-IX of FIG. 8.

[0075] In FIG. 9, the wavelength conversion component 20 includes a single crystal substrate 21 and a wavelength conversion member 22. The wavelength conversion member 22 includes a first inorganic solid phosphor single crystal film 221, a first portion 224 of the inorganic solid phosphor single crystal, and a second portion 225 of the inorganic solid single crystal. The first portion 224 and the second portion 225 form a two-dimensional photonic crystal.

[0076] Specifically, the wavelength conversion component 20 includes, for example, a substrate 21 made of a transparent sapphire single crystal plate material, a wavelength conversion member 22 which is a eutectic including a first portion 224 of a Ce-doped yttrium aluminum garnet single crystal (Ce:YAG single crystal) and a second portion 225 of an α-Al2O3 single crystal having a corundum structure. In FIG. 8, the first portion 224 and the second portion 225 are visible through the substrate 21. The substrate 21 has an m-plane or an a-plane as the main plane.

[0077] The base 21 has a thermal conductivity greater than that of the first portion 224 of the wavelength conversion member 22. The eutectic of the wavelength conversion member 22 has a periodic structure consisting of the first portion 224 and the second portion 225. The wavelength conversion member 22 has a structure in which pillars made of α-Al2O3 single crystal, which constitute the second portion 225, periodically penetrate the Ce:YAG crystal film, which constitutes the first portion 224. The periodic structure inside the eutectic forms a two-dimensional slab-type photonic crystal. The first portion 224 of the wavelength conversion member 22 contains a phosphor single crystal that absorbs part of the excitation light and generates light having a longer wavelength than the excitation light. The second portion 225 is preferably translucent to the excitation light and light whose wavelength has been converted by the first portion 224. This is to improve the luminous efficiency of the light emitting device.

[0078] (Method for manufacturing wavelength conversion components) A first inorganic solid phosphor single crystal film 221 is epitaxially formed by laser CVD, which is a vapor phase growth method, on a transparent single crystal plate material that will become the base 21. A dot pattern in which a plurality of circular holes that penetrate the first inorganic solid phosphor single crystal film 221 are arranged in a triangular lattice pattern is formed by electron beam lithography and dry etching such as RIE, and the transparent single crystal of the base 21 is exposed in a dot pattern. Again, a eutectic consisting of first portions 224 and second portions 225 is formed by laser CVD on the dot pattern of the exposed base 21 and on the first inorganic solid phosphor single crystal film 221. The first portion 224 grows on the first inorganic solid phosphor single crystal film 221, and the second portion 225 grows on the exposed transparent single crystal of the base, and the periodic dot pattern is inherited by the eutectic to form a two-dimensional slab-type photonic crystal.

[0079] (Action and effect) Because the first portion 224 of the wavelength conversion member 22 is an inorganic solid phosphor single crystal, there are no interparticle voids or grain boundaries that hinder heat conduction inside the first portion 224, and heat is conducted efficiently inside the first portion 224, suppressing a rise in temperature in the first portion 224. This makes it possible to reduce the temperature quenching phenomenon in which the efficiency of wavelength conversion of excitation light in the wavelength conversion member 22 decreases, and as a result, the light output of the light emitting device 100 can be improved.

[0080] Since the second portion 225 of the wavelength conversion member 22 penetrates the first portion 224 of the wavelength conversion member 22 and is disposed on the base 21, the second portion 225 of the wavelength conversion member 22 conducts heat generated in the first portion 224 and helps dissipate the heat from the wavelength conversion member 22 to an external heat dissipation component or the like via the base 21. The thermal conductivity of the first portion 224 and the thermal conductivity of the second portion 225 may be equal, but it is preferable that the thermal conductivity of the second portion 225 is greater than that of the first portion 224. This is because it is easier to reduce the risk of temperature quenching occurring in the first portion 224.

[0081] When first portion 224 of wavelength conversion member 22 is directly bonded to base 21 made of an inorganic solid single crystal plate material, the thermal conductivity of base 21 is greater than that of first portion 224, and therefore heat generated in first portion 224 is easily transferred to base 21. Furthermore, there are no interparticle voids or grain boundaries inside base 21 that hinder heat conduction, and heat conduction inside base 21 is more efficient than inside wavelength conversion member 22, suppressing a temperature rise in first portion 224. This reduces the thermal quenching phenomenon of wavelength conversion member 22, and as a result, the light output of light emitting device 100 can be improved.

[0082] Specifically, the thermal conductivity of sapphire single crystal (α-Al2O3 single crystal with a corundum structure) is approximately 42 W / (m·K), which is greater than the thermal conductivity of YAG single crystal, approximately 13.4 W / (m·K). Therefore, even when the Ce:YAG crystal film is thicker than 100 μm, the α-Al2O3 single crystal pillars penetrating the Ce:YAG crystal film conduct heat generated in the Ce:YAG crystal film to the substrate, reducing the temperature rise of the YAG crystal film. Furthermore, because the α-Al2O3 single crystal pillars are epitaxially formed on the sapphire single crystal substrate 21, there are no grain boundaries between them, resulting in efficient heat conduction and reduced temperature rise in the wavelength conversion component 20. This reduces the thermal quenching phenomenon, which reduces the efficiency of wavelength conversion of excitation light in the wavelength conversion member 22, thereby improving the light output of the light-emitting device 100.

[0083] The periodic structure inside the eutectic that forms the two-dimensional slab-type photonic crystal narrows the distribution of emitted light, improving the front brightness. This improves the optical coupling rate with optical elements such as lenses, and improves the power-to-light conversion efficiency of the light-emitting device.

[0084] (Modification of the third embodiment) FIG. 10 is a cross-sectional conceptual diagram of a modified example of the third embodiment. In FIG. 10, the same reference numerals as in FIG. 9 indicate the same components. In this modified example of the third embodiment, a first portion 226 and a second portion 225 are added to the third embodiment. The wavelength conversion component 20 includes a base 21 and a wavelength conversion member 22. The wavelength conversion member 22 includes a first inorganic solid phosphor single crystal film 221, a eutectic film including a first portion 224 and a second portion 225, and a eutectic film including the first portion 226 and the second portion 225. The first portion 226 is, for example, a Eu:YAG crystal film, and the periodically arranged α-AlO crystal pillars of the second portion 225 penetrate the first portion 226. The first portion 226 can be epitaxially formed on the first portion 224 by growing the eutectic film including the first portion 226 and the second portion 225 on the eutectic film including the first portion 224 and the second portion 225 by laser CVD. The number of types of inorganic phosphor single crystals is not limited to two, and may be two or more.

[0085] Since the wavelength converting member 22 includes two or more types of inorganic phosphor single crystal films with different emission wavelengths, for example, a yellow-emitting phosphor single crystal film and a red-emitting phosphor single crystal film, illumination light with high color rendering properties can be emitted.

[0086] (Fourth embodiment) The light emitting device according to the fourth embodiment of the present disclosure is similar to that according to the second embodiment, except for the wavelength conversion component 20 .

[0087] Fig. 11 is a plan conceptual diagram of a wavelength conversion component 20 in the fourth embodiment. In Fig. 11, the upper side is an overall conceptual diagram, and the lower side is a partially enlarged conceptual diagram. Fig. 12 is a cross-sectional conceptual diagram taken along line XII-XII in Fig. 11.

[0088] In FIG. 11, the wavelength conversion component 20 has a single-crystal substrate 21 and a wavelength conversion member 22. The wavelength conversion member 22 includes a first inorganic solid phosphor single-crystal film 221, a eutectic crystal including a first portion 224 of an inorganic solid phosphor single-crystal and a second portion 225 of an inorganic solid single-crystal, and a window member 223 of an inorganic solid single-crystal. The first portion 224 and the second portion 225 form a two-dimensional photonic crystal.

[0089] Specifically, the wavelength conversion component 20 has, for example, a substrate 21 made of a single-crystal plate of transparent sapphire, a wavelength conversion member 22 including a eutectic crystal including a first portion 224 of a Ce:YAG single-crystal and a second portion 225 of an α-Al2O3 single-crystal, and a window member 223 of an α-Al2O3 single-crystal film. In FIG. 11, the first portion 224 and the second portion 225 are visible through the window member 223. The substrate 21 has an m-plane or an a-plane as a main surface.

[0090] The substrate 21 has a thermal conductivity greater than that of the phosphor single-crystal, and the window member 223 also has a thermal conductivity greater than that of the phosphor single-crystal. The wavelength conversion member 22 has a structure in which columns made of Ce:YAG crystals, which are the first portion 224, penetrate through the α-Al2O3 single-crystal film, which is the second portion 225, periodically.

[0091] (Method for manufacturing the wavelength conversion component) An epitaxial first inorganic solid phosphor single-crystal film 221 is formed on a transparent single-crystal plate to be the substrate 21 by a laser CVD method, which is a vapor-phase growth method. By electron beam lithography and dry etching such as RIE, the first inorganic solid phosphor single-crystal film 221 is removed leaving a triangular lattice dot pattern to expose the substrate 21, and a triangular lattice dot pattern composed of islands of a plurality of first inorganic solid phosphor single-crystal films 221 is formed on the substrate 21. Again, a eutectic crystal composed of the first portion 224 and the second portion 225 is formed on the substrate 21 on which the dot pattern of the first inorganic solid phosphor single-crystal film 221 is formed by the laser CVD method. The first portion 224 grows on the first inorganic solid phosphor single-crystal film 221, and the second portion 225 grows on the transparent single-crystal of the exposed substrate 21, and the periodic dot pattern is inherited by the eutectic crystal to form a two-dimensional photonic crystal.

[0092] Furthermore, a transparent inorganic solid single crystal serving as the window member 223 can be formed on the two-dimensional photonic crystal by direct bonding or by laser CVD, which is a vapor phase growth method.

[0093] (Function and Effect) Since the columnar first portion 224 is an inorganic solid phosphor single crystal, there are no interparticle voids or grain boundaries that impede heat conduction inside the first portion 224, and heat conduction inside the first portion 224 is efficiently performed.

[0094] The heat generated in the columnar first portion 224 is radiated to the outside through the base 21, the second portion 225, and the window member 223 surrounding the columnar first portion 224. Each of the base 21, the second portion 225, and the window member 223 has a higher thermal conductivity than the thermal conductivity of the first portion 224, and there are no interparticle voids or grain boundaries that impede heat conduction inside any of them. Heat conduction inside the base 21, the second portion 225, and the window member 223 is more efficient than inside the first portion 224. Therefore, it is possible to prevent heat from being stored in the first portion 224 and the temperature of the first portion 224 from rising excessively, and it is possible to reduce the temperature quenching phenomenon of the phosphor single crystal contained in the first portion 224.

[0095] The periodic structure inside the eutectic forms a two-dimensional photonic crystal. When the wave number of light traveling perpendicular to the side surface of the columnar first portion 224 satisfies the Bragg reflection condition, that light cannot exist in the wavelength conversion member 22. That is, the light existing in the wavelength conversion member 22 has a wave number vector parallel to the extending direction of the columnar first portion 224. That is, by having a two-dimensional photonic crystal structure, the light extraction efficiency is improved.

[0096] The refractive index of the first part 224 is higher than that of the second part 225. For example, when a Ce:YAG single crystal is used for the first part 224, its refractive index is 1.82 to 1.86. For example, when an α-Al2O3 single crystal is used for the second part 225, the refractive index of the second part 225 is 1.76 to 1.77. The light that undergoes total reflection at the interface between the first part 224 and the second part 225 and propagates inside the first part 224 is emitted into the substrate 21 of the transparent sapphire single crystal or the window member 223 of the α-Al2O3 single crystal film at the end of the columnar first part 224. The light that passes through the interface between the first part 224 and the second part 225 and travels into the second part 225 refracts at the interface according to Snell's law and travels toward the window member 223 side or the substrate 21 side, reducing the light heading toward the side surface of the wavelength conversion component 20. The light that travels toward the substrate 21 side at the bottom surface on the substrate 21 side of the wavelength conversion component 20 is reflected toward the window member 223 side by the optical thin film. Thus, the ratio of the light emitted from the top surface on the window member 223 side can be increased, improving the luminous efficiency of the light-emitting device.

[0097] In FIGS. 11 and 12, the columnar first part 224 has a structure that penetrates the film-like second part 225. However, by changing the growth conditions of the eutectic crystal, such as the pattern formed on the first inorganic solid phosphor single crystal film 221 and the ratio of various source gases supplied to the reaction chamber, the film-like first part 224 can also have a structure that is penetrated by the columnar second part 225.

[0098] (Modification of the Fourth Embodiment) FIG. 13 is a cross-sectional conceptual diagram of a modified fourth embodiment. In FIG. 13, the same reference numerals as in FIG. 12 indicate the same components. In this modified fourth embodiment, a first portion 226 and a second portion 225 are added to the fourth embodiment. The wavelength conversion component 20 includes a base 21 and a wavelength conversion member 22. The wavelength conversion member 22 includes a first inorganic solid phosphor single crystal film 221, a eutectic film consisting of the first portion 226 and the second portion 225, a eutectic film consisting of the first portion 224 and the second portion 225, and a third window member 223. The first portion 226 is, for example, a pillar made of periodically arranged Eu:YAG single crystals, penetrating the α-Al2O3 crystal film of the second portion 225. A eutectic film consisting of the first portion 226 and the second portion 225 is grown on the dot pattern of the first inorganic solid phosphor single crystal film 221 by laser CVD, and a eutectic film consisting of the first portion 224 and the second portion 225 is further grown on the eutectic film consisting of the first portion 226 and the second portion 225, thereby forming the first portion 224 epitaxially on the first portion 226. The window member 223 is an inorganic solid single crystal film. The number of types of inorganic phosphor single crystals is not limited to two, and may be two or more.

[0099] Since the wavelength converting member 22 contains two or more types of inorganic phosphor single crystals with different emission wavelengths, for example, a yellow-emitting phosphor single crystal and a red-emitting phosphor single crystal, illumination light with high color rendering properties can be emitted.

[0100] Fifth Embodiment The light emitting device according to the fifth embodiment of the present disclosure is similar to that of the fourth embodiment, except for the wavelength conversion member 22 .

[0101] Fig. 14 is a plan conceptual diagram of a wavelength conversion component 20 in the fifth embodiment. In Fig. 14, the upper side is an overall conceptual diagram, and the lower side is a partially enlarged conceptual diagram. Fig. 15 is a cross-sectional conceptual diagram taken along line XV-XV in Fig. 14.

[0102] 15 , the wavelength conversion component 20 has a single crystal substrate 21 and a wavelength conversion member 22, and the wavelength conversion member 22 includes a first portion 224 of an inorganic solid phosphor single crystal, a second portion 225 of an inorganic solid single crystal, and a third portion 227 of an inorganic solid single crystal film. In the wavelength conversion member 22, the first portion 224 and the second portion 225 form a film, and the first portions 224 and the second portions 225 are arranged alternately in a direction perpendicular to the thickness direction of the film. The wavelength conversion member 22 has one or more pairs of layers each consisting of a film formed by the first portion 224 and the second portion 225 and an inorganic solid single crystal film which is the third portion 227.

[0103] Specifically, the wavelength conversion member 22 has one or more pairs of layers, each pair consisting of a film (eutectic) made of a first portion 224 of a Ce:YAG single crystal and a second portion 225 of an α-Al2O3 single crystal, and a third portion 227 of the α-Al2O3 single crystal film. That is, the wavelength conversion component 20 is a laminate of the substrate 21 / first eutectic / first third portion 227 / second eutectic / second third portion 227 / third eutectic / third third portion 227 / ··· / nth eutectic / nth third portion 227 (n is a natural number). The nth third portion 227 also serves as a window member. In the film (eutectic) made of the first portion 224 and the second portion 225, the first portions 224 and the second portions 225 are alternately arranged in a direction perpendicular to the thickness direction of the film. In FIG. 14, the nth first portion 224 and the nth second portion 225 are visible through the nth third portion 227 .

[0104] In the fourth embodiment described above, the transparent sapphire single crystal substrate 21 has an m-plane or an a-plane as its main surface, but in the fifth embodiment, the plane orientation of the main surface of the transparent sapphire single crystal may be other plane orientations.

[0105] (Method for manufacturing wavelength conversion components) When growing a eutectic composed of, for example, a Ce:YAG crystal and an α-Al2O3 single crystal by the laser CVD method, while supplying Y source gas (for example, tris(dipivaloylmethanato)yttrium vapor and carrier gas (for example, Ar gas)), Al source gas (for example, tris(dipivaloylmethanato)aluminum vapor and carrier gas), and oxygen gas (O2) into the reaction chamber under control of the supply amounts of the respective source gases, if a Ce source gas (for example, tetrakis(dipivaloylmethanato)cerium vapor and carrier gas) is supplied into the reaction chamber, a eutectic composed of a Ce:YAG crystal and an α-Al2O3 single crystal grows. Then, if the valve provided in the pipe connecting the Y source container and the reaction chamber and the valve provided in the pipe connecting the Ce source container and the reaction chamber are simultaneously closed, since the supply of the Al source gas and the oxygen gas continues, an α-Al2O3 single crystal film grows. Again, if the valve provided in the pipe connecting the Y source container and the reaction chamber and the valve provided in the pipe connecting the Ce source container and the reaction chamber are simultaneously opened, the eutectic grows, and again, if both valves are closed, an α-Al2O3 single crystal film grows. By opening and closing the valves a predetermined number of times, the above-described laminate is formed. Note that the arrangement and diameter of the first portion 224 in the second portion 225 are left to nature because the YAG single crystal film that is the starting point of the growth of the first portion 224 is not arranged.

[0106] (Function and Effect) Due to the three-dimensional distribution of the first portion 224, the wavelength conversion member 22 has the effect of scattering light as the light traveling inside the wavelength conversion member 22 is repeatedly reflected and refracted at the boundary between the first portion 224 and the second portion 225 and at the boundary between the first portion 224 and the third portion 227.

[0107] In FIGS. 14 and 15, the columnar first portion 224 penetrates the film-like second portion 225, but the film-like first portion 224 can also have a structure in which the columnar second portion 225 penetrates it.

[0108] (Modification of the Fifth Embodiment) Fig. 16 is a cross-sectional conceptual diagram of a modified example of the fifth embodiment. In Fig. 16, the same reference numerals as in Fig. 15 indicate the same components as in Fig. 15. In this modified example of the fifth embodiment, some pairs of layers out of n pairs of layers contain inorganic phosphor single crystals with an emission wavelength different from that of the other pairs of layers. In Fig. 16, for example, the first and second pairs of layers contain first portions 226 made of Eu:YAG single crystals, and the third to nth pairs of layers contain first portions 224 made of Ce:YAG single crystals. The number of types of inorganic phosphor single crystals is not limited to two, and may be more than two.

[0109] Since the wavelength converting member 22 contains two or more types of inorganic phosphor single crystals with different emission wavelengths, for example, a yellow-emitting phosphor single crystal and a red-emitting phosphor single crystal, illumination light with high color rendering properties can be emitted.

[0110] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims. [Industrial Applicability]

[0111] The wavelength conversion component and light emitting device of the present disclosure can be suitably used in various light sources, such as light sources for illumination and projectors, and light sources for headlights for moving bodies such as automobiles, ships, and airplanes. [Explanation of symbols]

[0112] 10 Light-emitting element 20 Wavelength conversion components 21 Base 22 Wavelength conversion material 221 First Inorganic Solid Phosphor Single Crystal Film 222 Second Inorganic Solid Phosphor Single Crystal Film 223 Window components 224,226 first part 225 Second part 227 Third part 30 Bonding material 40 Support stand 41 Ceramic Plates 42 Wiring 421 Top Wiring 422 Via 423 Bottom Wiring 50 Light Shielding Member 60 Optical Element 70 Heat Sink 80 Power Supply for Driving Light Emitting Element 90 Housing 100, 200 Light Emitting Device

Claims

1. A single-crystalline substrate and a wavelength conversion member, wherein the wavelength conversion member is a multilayer film including a first inorganic solid phosphor single-crystalline film and an inorganic solid single-crystalline film or a second inorganic solid phosphor single-crystalline film different in type from the first inorganic solid phosphor single-crystalline film, the wavelength conversion component.

2. The wavelength conversion member is a multilayer film including the first inorganic solid phosphor single-crystalline film, the second inorganic solid phosphor single-crystalline film, and the inorganic solid single-crystalline film, the wavelength conversion component according to Claim 1.

3. A single-crystalline substrate and a wavelength conversion member, wherein the wavelength conversion member includes a first portion of an inorganic solid phosphor single-crystalline and a second portion of an inorganic solid single-crystalline, and the first portion and the second portion form a two-dimensional photonic crystal, the wavelength conversion component.

4. A single-crystalline substrate and a wavelength conversion member, wherein the wavelength conversion member includes a first portion of an inorganic solid phosphor single-crystalline, a second portion of an inorganic solid single-crystalline, and a third portion of an inorganic solid single-crystalline film, the first portion and the second portion form a film, the first portion and the second portion are arranged alternately in a direction perpendicular to the thickness direction of the film, and the wavelength conversion component has one or more pairs of layers each composed of the film and the third portion.

5. A solid light-emitting element that emits excitation light, and the wavelength conversion component according to any one of Claims 1 to 4 that absorbs the excitation light, a light-emitting device.

Images