Mount board, light-emitting device, method of manufacturing mount board, and method of manufacturing light-emitting device

Abstract

To provide a mount board or light-emitting device such that an electronic component is easily arranged on the mount board having metal exposed.SOLUTION: A mount board 100 has a ceramic substrate 1 having two or more through holes 11 formed, a metal member 2 arranged in each through hole 11, and a joining material 3 arranged in each through hole 11 between the ceramic substrate 1 and the metal member 2, and joining the ceramic substrate 1 and the metal member 2, wherein a top surface 2a and a reverse surface 2b of the metal member 2 are exposed from the ceramic substrate 1, which is arranged surrounding outer edges of the respective metal members 2 in top view.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a mounting substrate, a light-emitting device, a method for manufacturing a mounting substrate, and a method for manufacturing a light-emitting device.

Background Art

[0002] For example, a thermal expansion suppression member made of ceramics having a hole penetrating in the longitudinal direction of the main surface, and an electrode member made of Cu having a shape slightly larger in the plane direction at room temperature than the hole of the thermal expansion suppression member are prepared, and the electrode member is fitted into the hole of the thermal expansion suppression member, and a predetermined temperature is applied, and a thermal buffer plate in which the electrode member is fitted into the hole of the thermal expansion suppression member is disclosed (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] According to the mounting substrate or the light-emitting device according to an embodiment of the present disclosure, it is an object to facilitate arranging electronic components on the mounting substrate where metal is exposed. Further, from another viewpoint, according to the mounting substrate or the light-emitting device according to an embodiment of the present disclosure, it is an object to provide a mounting substrate having high heat dissipation performance.

Means for Solving the Problems

[0005] The mounting substrate according to an embodiment of the present disclosure includes a ceramic substrate in which two or more through holes are formed, metal members disposed in respective ones of the through holes, and bonding materials disposed between the ceramic substrate and the metal members in respective ones of the through holes to bond the ceramic substrate and the metal members. The upper surface and the lower surface of each of the metal members are exposed from the ceramic substrate, and in a top view, the ceramic substrate is disposed so as to surround the outer edge of each of the metal members.

[0006] The mounting substrate according to an embodiment of the present disclosure includes a ceramic substrate having two or more recesses formed on an upper surface thereof, metal members disposed in respective ones of the recesses, and bonding materials disposed between the ceramic substrate and the metal members in respective ones of the recesses to bond the ceramic substrate and the metal members. The upper surface of each of the metal members is exposed from the ceramic substrate, and the lower surface of each of the metal members faces a plane defining the recess of the ceramic substrate.

[0007] The light-emitting device according to an embodiment of the present disclosure includes the above-described mounting substrate and light-emitting elements disposed so as to be electrically connected to respective ones of the metal members.

[0008] The method for manufacturing a mounting substrate according to an embodiment of the present disclosure includes preparing a ceramic substrate in which two or more through holes or recesses are formed, disposing a bonding material in each of the through holes or the recesses formed in the ceramic substrate, disposing a metal member in each of the through holes or the recesses of the ceramic substrate, and sintering the bonding material disposed in each of the through holes or the recesses of the ceramic substrate.

[0009] The manufacturing method of a light-emitting device according to an embodiment of the present disclosure includes preparing a ceramic substrate in which two or more through-holes or recesses are formed, disposing a bonding material in each of the through-holes or the recesses formed in the ceramic substrate, disposing a metal member in each of the through-holes or the recesses of the ceramic substrate, sintering the bonding material disposed in each of the through-holes or the recesses of the ceramic substrate, and disposing a light-emitting element so as to be electrically connected to each of the metal members in the ceramic substrate in which the bonding material is sintered.

Advantages of the Invention

[0010] According to the mounting substrate or the light-emitting device according to an embodiment of the present disclosure, it is possible to facilitate the arrangement of electronic components on the mounting substrate where metal is exposed. According to the mounting substrate or the light-emitting device according to an embodiment of the present disclosure, it is possible to provide a mounting substrate with high heat dissipation performance.

Brief Description of the Drawings

[0011]

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Embodiments for Carrying Out the Invention

[0012] Hereinafter, with reference to the drawings, a mounting substrate, a light-emitting device, a method for manufacturing a mounting substrate, and a method for manufacturing a light-emitting device according to embodiments of the present invention will be described. In the following description, terms indicating specific directions or positions (for example, "up", "down", and other terms including these terms) are used as necessary. However, the use of these terms is for facilitating the understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of those terms. Also, parts or members denoted by the same reference numerals in a plurality of drawings indicate the same or equivalent parts or members.

[0013] In addition, the embodiments described below illustrate a mounting substrate, a light-emitting device, a method for manufacturing a mounting substrate, and a method for manufacturing a light-emitting device for embodying the technical idea of the present invention, and do not limit the present invention as follows. In addition, the dimensions, materials, shapes, relative arrangements, etc. of the parts or members described below are not intended to limit the scope of the present invention only to those, but are intended to be illustrative unless otherwise specified. In addition, the content described in one embodiment is also applicable to other embodiments and modifications. In addition, the dimensions and positional relationships of the parts or members shown in the drawings may be exaggerated for clarity of explanation. Furthermore, in order to avoid excessive complexity of the drawings, a schematic diagram in which the illustration of some parts or members is omitted or an end view showing only the cut surface as a cross-sectional view may be used. In addition, "arranging" includes not only the case of direct contact but also the case of indirect arrangement, for example, via other members. In addition, in the terms of this specification, "height" shall mean the position in the normal direction of the upper surface of the ceramic substrate provided in the mounting substrate according to the embodiment.

[0014] [First Embodiment] <Configuration of the Mounting Substrate According to the First Embodiment> With reference to FIGS. 1 and 2, the mounting substrate according to the first embodiment will be described. FIG. 1 is a schematic perspective view showing an example of the mounting substrate 100 according to the first embodiment. FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. 1.

[0015] The mounting substrate 100 includes a ceramic substrate 1 in which two or more through-holes 11 are formed, metal members 2 disposed in the respective through-holes 11, and a bonding material 3 disposed between the ceramic substrate 1 and the metal members 2 in the respective through-holes 11 to bond the ceramic substrate 1 and the metal members 2. The upper surface 2a and the lower surface 2b of each metal member 2 are exposed from the ceramic substrate 1, and the ceramic substrate 1 is disposed so as to surround the outer edge 2c of each metal member 2 in a top view.

[0016] For example, when mounting an electronic component such as a light-emitting element on a mounting substrate, a conductive bonding material such as solder or a conductive paste is likely to move on the metal when placed thereon. Therefore, when the conductive bonding material is placed on the metal exposed from the mounting substrate, the conductive bonding material moves on the metal, which may make it difficult to perform self-alignment of the electronic component and control the thickness of the conductive bonding material. If the self-alignment of the electronic component and the thickness control of the conductive bonding material cannot be achieved, the difficulty of placing the electronic component on the mounting substrate increases.

[0017] In the mounting substrate 100, in a top view, the ceramic substrate 1 is arranged so as to surround the outer edge 2c of each metal member 2. The conductive bonding material is less likely to move on the ceramic than on the metal. Therefore, by arranging the ceramic substrate 1 so as to surround the outer edge 2c of the metal member 2, the conductive bonding material placed on the metal member 2 is less likely to move. Thereby, self-alignment of the electronic component placed on the metal and thickness control of the conductive bonding material become possible. By enabling the self-alignment of the electronic component and the thickness control of the conductive bonding material, in the present embodiment, it is possible to facilitate placing the electronic component on the mounting substrate where the metal is exposed.

[0018] In the mounting substrate 100, the bonding material 3 is an active metal solder. The active metal solder refers to a material in which active metal powder is added to the solder. Examples of the active metal include titanium, zirconium, or hafnium. In the mounting substrate 100, it is preferable to use titanium hydride as the active metal.

[0019] More specifically, the brazing filler metal preferably contains at least one of Ag, Al, Zn, Sn, and Ag-Cu alloys. The Ag-Cu alloy includes an alloy with a eutectic temperature of around 780 °C in which Ag is mixed at a ratio of about 72% and Cu is mixed at a ratio of 28%, which is called a so-called Ag-Cu eutectic. When using a brazing filler metal of Ag-Cu alloy, it may further contain at least one kind of particles of Ag, Cu, Cr, and Ni. Since the melting point of Cu powder is 1,084 °C and the melting point of Ag powder is 962 °C, Ag powder and the like do not melt at around 780 °C to 850 °C, which is the temperature at which the Ag-Cu alloy melts because it is much higher than the eutectic temperature of the Ag-Cu alloy, and exist in a dispersed state in the bonding material 3, and the volume shrinkage of the bonding material 3 can be reduced. In addition, by containing powders such as Ag and Cu, the thermal conductivity and electrical conductivity can be improved.

[0020] The active metal powder is not particularly limited, and examples thereof include titanium hydride (TiH2), cerium hydride (CeH2), zirconium hydride (ZrH2), magnesium hydride (MgH2), and the like. These may be used alone or in combination of two or more. Among these, the active metal powder preferably contains TiH2. When the active metal powder contains TiH2, it can react with aluminum nitride exposed on the inner surface defining the through hole or the like to become titanium nitride (TiN) as a metal compound. Titanium nitride is known as a barrier metal. Therefore, migration of the metal in the bonding material 3 can be suppressed, and a highly reliable ceramic substrate can be obtained.

[0021] In addition, the active metal solder material may contain ceramic particles such as silicon nitride and aluminum nitride as long as the conductivity is not impaired. By containing the ceramic particles, the difference in the linear expansion coefficients between the metal member and the ceramic substrate can be reduced. In particular, by making the material of the ceramic particles the same as the material of the ceramic substrate, the difference in the linear expansion coefficients can be further reduced, and cracks between the metal member and the ceramic substrate can be reduced. The metal powder and the ceramic particles contained in the bonding material 3 are smaller than the gap between the ceramic substrate 1 and the metal member 2 in the through hole 11.

[0022] Since the linear expansion coefficient of the ceramic substrate is different from that of the metal member, for example, when the temperature of the peripheral environment of the mounting substrate changes, a difference in expansion or contraction occurs between the ceramic substrate and the metal member, and cracks may occur in the mounting substrate. In contrast, the value of the linear expansion coefficient of the active metal solder material is between the linear expansion coefficient of the ceramic substrate and the linear expansion coefficient of the metal member. Therefore, by disposing the active metal solder material as the bonding material 3 between the ceramic substrate 1 and the metal member 2 in each through hole 11, the difference in the linear expansion coefficients between the ceramic substrate 1 and the metal member 2 can be reduced. By reducing the difference in the linear expansion coefficients between the ceramic substrate 1 and the metal member 2, even when the temperature of the peripheral environment of the mounting substrate 100 changes, cracks in the mounting substrate 100 corresponding to the difference in the linear expansion coefficients can be reduced.

[0023] In the mounting substrate 100, a part of the side surface 2d of each metal member 2 is exposed from the ceramic substrate 1. For example, not only one surface of the side surface 2d of the metal member 2 is exposed from the ceramic substrate 1, but three surfaces are exposed from the ceramic substrate 1. Since a part of the side surface 2d is exposed from the ceramic substrate 1, the heat generated in the mounting substrate 100 is transferred through the metal member 2, and is easily radiated to the outside of the mounting substrate 100 through a part of the side surface 2d and the lower surface 2b of the metal member 2 exposed from the ceramic substrate 1 via a bonding material such as solder. As a result, in the mounting substrate 100, the heat dissipation performance of the mounting substrate 100 can be improved.

[0024] The mounting substrate 100 is connected to the upper ends 2d1 of the side surfaces 2d of the respective metal members 2 and has a stepped surface 4 located below the upper surface 2a of the metal member 2. A part of the ceramic substrate 1 is disposed on the stepped surface 4 of the metal member 2. For example, the cross-sectional shape of the metal member 2 in the cross-section corresponding to the line II-II in FIG. 1 is L-shaped. As shown in FIG. 2, the area of the lower surface 2b of the metal member 2 is larger than the area of the upper surface 2a.

[0025] By disposing a part of the ceramic substrate 1 on the stepped surface 4, the movement of the conductive bonding material disposed on the stepped surface 4 of the metal member 2 can be reduced, so that the self-alignment of the electronic components disposed on the metal member 2 and the thickness control of the conductive bonding material become possible. By enabling the self-alignment of the electronic components disposed on the metal member and the thickness control of the conductive bonding material, in the present embodiment, it is possible to facilitate the arrangement of the electronic components on the mounting substrate where the metal member is exposed.

[0026] As the material of the ceramic substrate 1, nitride-based ceramics, oxide-based ceramics, silicon carbide, mullite, borosilicate glass, etc. can be used. Examples of the nitride-based ceramics include silicon nitride, aluminum nitride, boron nitride, etc. Examples of the oxide-based ceramics include aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc. These may be used alone or in combination of two or more. Among these, nitride-based ceramics are preferable as the ceramics in the ceramic substrate 1.

[0027] As the material of the metal member 2, silver, copper, silver-copper alloy, copper-zinc alloy, copper-tin alloy, etc. can be used. These may be used alone or in combination of two or more. Among these, it is preferable that the metal material in the metal member 2 is copper from the viewpoint of thermal conductivity.

[0028] <Manufacturing method of the mounting substrate 100> Next, with reference to FIGS. 3 to 17, the manufacturing method of the mounting substrate 100 will be described.

[0029] FIG. 3 is a flowchart showing an example of a method for manufacturing the mounting substrate 100. The method for manufacturing the mounting substrate 100 according to the first embodiment includes preparing a ceramic substrate 1 in which two or more through-holes 11 or recesses are formed (S11), and disposing a bonding material 3 in each of the through-holes 11 or recesses formed in the ceramic substrate 1 (S13). The method for manufacturing the mounting substrate 100 also includes disposing a metal member 2 in each of the through-holes 11 or recesses of the ceramic substrate 1 (S14), and sintering the bonding material 3 disposed in each of the through-holes 11 or recesses of the ceramic substrate 1 (S16).

[0030] The method for manufacturing the mounting substrate 100 includes preparing a metal member 2 (S12), and forming a conductive coating portion 5 that covers at least one of the upper and lower surfaces of the bonding material 3 and the ceramic substrate 1 after the bonding material 3 is disposed and before the bonding material 3 is sintered (S15). The method for manufacturing the mounting substrate 100 also includes performing at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 so as to expose the metal member 2 with respect to the upper surface of the ceramic substrate 1 after the bonding material 3 is sintered (S17). The method for manufacturing the mounting substrate 100 also includes performing at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 so as to expose the metal member 2 with respect to the lower surface of the ceramic substrate 1 after the bonding material 3 is sintered (S18). The mounting substrate 100 has a plurality of sets including the ceramic substrate 1 and the metal member 2, and the method for manufacturing the mounting substrate 100 includes separating the plurality of sets into individual pieces (S19).

[0031] (S11: Preparing the ceramic substrate 1) In S11, a ceramic substrate 1 in which two or more through-holes 11 are formed is prepared. FIG. 4 is a schematic perspective view showing an example of preparing the ceramic substrate 1 in the method for manufacturing the mounting substrate 100. FIG. 5 is a schematic cross-sectional view taken along line V-V in FIG. 4. A plurality of through-holes 11 are formed in the ceramic substrate 1. The method of processing for forming the through-hole 11 or the recess in the ceramic substrate 1 can be appropriately selected according to the target shape of the ceramic substrate 1, and for example, drilling, laser processing, blasting, etching processing, etc. can be used. Note that preparing the ceramic substrate 1 (S11) may be to prepare a commercially available product if there is a commercially available product of the ceramic substrate 1 having a desired shape and dimensions.

[0032] (S12: Preparing the metal member 2) In S12, the metal member 2 is prepared. FIG. 6 is a schematic perspective view showing an example of preparing the metal member 2 in the method for manufacturing the mounting substrate 100. FIG. 7 is a schematic cross-sectional view taken along line VII-VII in FIG. 6. The metal member 2 is a plurality of members formed in a desired shape. The metal member 2 is formed in a shape corresponding to the shape of the through-hole 11 or the recess formed in the ceramic substrate 1. Note that preparing the metal member 2 (S12) may be to prepare a commercially available product if there is a commercially available product of the metal member 2 having a desired shape and dimensions.

[0033] (S13: Disposing the bonding material 3) In S13, the bonding material 3 is disposed in each through-hole 11 or recess formed in the ceramic substrate 1. FIG. 8 is a schematic perspective view showing an example of disposing the bonding material 3 in the method for manufacturing the mounting substrate 100. FIG. 9 is a schematic cross-sectional view taken along line IX-IX in FIG. 8. The coating amount of the bonding material 3 is preferably adjusted in consideration of the difference between the volume of the space of the through-hole 11 or the recess and the volume of the metal member 2 described later, and the volume shrinkage. For example, the coating amount of the bonding material 3 may be prepared with 0.1 to 30% by volume, preferably 1 to 20% by volume, particularly preferably 3 to 10% by volume of the bonding material 3 based on the difference between the volume of the space of the through-hole 11 or the recess and the volume of the metal member 2 described later.

[0034] (S14: Placing the metal member 2) In S14, the metal member 2 is placed in each through-hole 11 or recess of the ceramic substrate 1. FIG. 10 is a schematic perspective view showing an example of placing the metal member 2 in the manufacturing method of the mounting substrate 100. FIG. 11 is a schematic cross-sectional view taken along line XI-XI in FIG. 10. The metal member 2 is placed at a position corresponding to the through-hole 11 or recess formed in the ceramic substrate 1. The metal member 2 may be inserted and placed in the ceramic substrate 1 in which the bonding material 3 is placed in the through-hole 11 or the like, or the ceramic substrate 1 having the through-hole 11 may be inserted and placed in the metal member 2 in which the bonding material 3 is placed. The bonding material 3 leaking out from the through-hole 11 may be appropriately removed, may be spread flatly, or may be placed so as to protrude near the upper part of the through-hole 11.

[0035] (S15: Forming the covering portion 5) In S15, after the bonding material 3 is placed and before the bonding material 3 is sintered, a conductive covering portion 5 that covers at least one of the upper surface 1a and the lower surface 1b of the bonding material 3 and the ceramic substrate 1 is formed. FIG. 12 is a schematic perspective view showing an example of forming the covering portion 5 in the manufacturing method of the mounting substrate 100. FIG. 13 is a schematic cross-sectional view taken along line XIII-XIII in FIG. 12. The covering portion 5 is formed on each of the upper surface 1a and the lower surface 1b of the bonding material 3 and the ceramic substrate 1.

[0036] The bonding material 3 may shrink by performing sintering (S16) of the bonding material 3 described below. When the bonding material 3 shrinks, the height of the upper surface of the sintered bonding material 3 may become lower than the height of the upper surface 1a of the ceramic substrate 1, and the position of the upper surface of the sintered bonding material 3 and the position of the upper surface 1a of the ceramic substrate 1 may not be aligned. Similarly, the position of the lower surface of the sintered bonding material 3 and the position of the lower surface 1b of the ceramic substrate 1 may not be aligned.

[0037] In the method for manufacturing the mounting substrate 100, after the bonding material 3 is disposed and before sintering the bonding material 3, a conductive coating portion 5 that covers at least one of the upper surface 1a and the lower surface 1b of the bonding material 3 and the ceramic substrate 1 is formed. Thereby, even when the bonding material 3 shrinks, it is possible to avoid the height of the upper surface of the sintered bonding material 3 becoming lower than the height of the upper surface 1a of the ceramic substrate 1. Therefore, by performing at least one of polishing and grinding on the coating portion 5 and the ceramic substrate 1, the height of the upper surface of the sintered bonding material 3 and the height of the upper surface 1a of the ceramic substrate 1 can be made uniform. Similarly, the height of the lower surface of the sintered bonding material 3 and the height of the lower surface 1b of the ceramic substrate 1 can be made uniform. It is preferable to use a metal material that is easier to polish or grind than the ceramic substrate 1 as the material of the coating portion 5.

[0038] (S16: Sintering the bonding material 3) In S16, the bonding material 3 disposed in each through hole 11 or recess of the ceramic substrate 1 is sintered. FIG. 14 is a schematic cross-sectional view showing an example of sintering the bonding material 3 in the method for manufacturing the mounting substrate 100. The bonding material 3 and the coating portion 5 are sintered.

[0039] Since the coating portion 5 is formed on each of the upper surface 1a and the lower surface 1b of the bonding material 3 and the ceramic substrate 1, even when the bonding material 3 shrinks due to sintering, the height of the upper surface of the sintered bonding material 3 is higher than the height of the upper surface 1a of the ceramic substrate 1. Thereby, by performing at least one of polishing and grinding on the coating portion 5 and the ceramic substrate 1, the height of the upper surface of the sintered bonding material 3 and the height of the upper surface 1a of the ceramic substrate 1 can be made uniform. From the viewpoint of sintering the bonding material 3 having a melting point lower than the melting point of the metal member 2, the sintering temperature is preferably 700 ° C. or higher and 1100 ° C. or lower, 750 ° C. or higher and 900 ° C. or lower, particularly 780 ° C. or higher and 850 ° C. or lower.

[0040] (S17 and S18: Performing at least one of polishing and grinding) In S17, at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 is performed on the upper surface 1a of the ceramic substrate 1 after the bonding material 3 is sintered so as to expose the metal member 2. In S18, at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 is performed on the lower surface 1b of the ceramic substrate 1 after the bonding material 3 is sintered so as to expose the metal member 2. FIG. 15 is a schematic perspective view showing an example of performing at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 in the method for manufacturing the mounting substrate 100. FIG. 16 is a schematic cross-sectional view taken along line XVI-XVI in FIG. 15.

[0041] In addition, in FIG. 15, for the purpose of showing that the upper surface 1a of the ceramic substrate 1 overlaps the ceramic substrate 1, the reference numeral of the upper surface 1a of the ceramic substrate 1 and the reference numeral of the ceramic substrate 1 are shown together. Similarly, for the purpose of showing that the upper surface 2a of the metal member 2 overlaps the metal member 2, the reference numeral of the upper surface 2a of the metal member 2 and the reference numeral of the metal member 2 are shown together. For the purpose of showing that the upper surface 3a of the bonding material 3 overlaps the bonding material 3, the reference numeral of the upper surface 3a of the bonding material 3 and the reference numeral of the bonding material 3 are shown together. In the following, the reference numerals may be shown together for the same purpose.

[0042] By performing at least one of polishing and grinding on each of the upper surface 1a and the lower surface 1b of the covering portion 5 and the ceramic substrate 1, the upper surface 2a of the metal member 2 and the upper surface 3a of the bonding material 3 are exposed from the upper surface 1a of the ceramic substrate 1. Further, the upper surface 3a of the bonding material 3 after sintering and the upper surface 1a of the ceramic substrate 1 are flush. Note that "flush" means a state where there is no step between two surfaces and the two surfaces are in substantially the same positional relationship. The lower surface 2b of the metal member 2 and the lower surface 3b of the bonding material 3 are exposed from the lower surface 1b of the ceramic substrate 1. The lower surface 3b of the bonding material 3 after sintering and the lower surface 1b of the ceramic substrate 1 are flush. Also, the side surface of the bonding material 3 after sintering and the side surface of the ceramic substrate 1 are flush. In other words, a part of each of the upper surface 2a, the lower surface 2b, and the side surface 2d of each metal member 2 is exposed from the ceramic substrate 1. The exposed portions of the side surface 2d and the lower surface 2b of the metal member 2 from the ceramic substrate 1 are continuous, and the side surface 2d of the metal member 2 and the side surface of the ceramic substrate 1 in the exposed portion from the ceramic substrate 1 are flush.

[0043] The above-mentioned "flush" is formed by cutting the ceramic substrate 1. In the example shown in FIG. 16, the lower surface 2b of the metal member 2 is plated, and the side surface 2d which is the cut surface is not plated. However, the upper surface 2a, the lower surface 2b, and the side surface 2d may each be plated. When electrically bonding to a mounting substrate via a conductive member such as solder, the conductive member can be continuously formed not only on the lower surface 2b of the metal member 2 but also on the side surface 2d of the metal member 2. Thereby, the heat dissipation performance is improved as compared with the case of dissipating heat from the lower surface 2b of the metal member 2.

[0044] (S19: Fragmentation) In S19, a plurality of sets 101 (see FIG. 17) each including a ceramic substrate 1 and a metal member 2 are separated into individual pieces. FIG. 17 is a schematic perspective view showing an example of separating a plurality of sets 101 each including a ceramic substrate 1 and a metal member 2 in the manufacturing method of the mounting substrate 100. The plurality of sets 101 each including a ceramic substrate 1 and a metal member 2 include four sets 101 in which two sets 101 are arranged in each of the vertical and horizontal directions. In the manufacturing method of the mounting substrate 100, by including separating a plurality of sets 101 each including a ceramic substrate 1 and a metal member 2, a large number of mounting substrates 100 can be taken out from one ceramic substrate 1. Thereby, the manufacturing efficiency of the mounting substrate 100 can be increased.

[0045] The cutting line C shown by the thick dashed line in FIG. 17 indicates the portion where the ceramic substrate 1 is cut for separation. As a method of cutting for separation, for example, a method using a disk-shaped rotary blade, an ultrasonic cutter, laser light irradiation, a blade, etc. can be applied. By separating, four sets 101 each including a ceramic substrate 1 and a metal member 2 can be taken out. Also in the separation (S19), it is preferable that the side surface 2d of the metal member 2 and the side surface of the ceramic substrate 1 at the exposed portion from the ceramic substrate 1 are flush.

[0046] [Second Embodiment] <Configuration of the mounting substrate according to the second embodiment> With reference to FIGS. 18 and 19, the mounting substrate according to the second embodiment will be described. FIG. 18 is a schematic perspective view showing an example of the mounting substrate 100a according to the second embodiment. FIG. 19 is a schematic cross-sectional view taken along line XIX-XIX in FIG. 18.

[0047] In the mounting substrate 100a according to the second embodiment, the main difference from the mounting substrate 100 according to the first embodiment is that a metal film 21 is disposed on the upper surface 2a of each metal member 2. The metal film 21 can be disposed not only on the upper surface 2a of the metal member 2 but also on the upper surface 3a of the bonding material 3.

[0048] In the mounting substrate 100a, for example, a metal film 21 having good wettability with respect to the conductive bonding material used when mounting electronic components such as light-emitting elements on the mounting substrate 100a can be disposed on the upper surface 2a of each metal member 2 and the upper surface 3a of the bonding material 3, as compared with the upper surface 2a of the metal member 2 before the metal film 21 is disposed. Thereby, when the conductive bonding material is disposed on the metal member 2, the wettability of the conductive bonding material on the metal member 2 can be improved. Further, by improving the wettability of the conductive bonding material, the connection between the external circuit components, wirings, etc. and the metal member 2 can be made good.

[0049] Also, in the mounting substrate 100a, for example, a metal film 21 having a high reflectance with respect to the light emitted from the light-emitting element can be disposed on the upper surface 2a of each metal member 2, as compared with the upper surface 2a of the metal member 2 before the metal film 21 is disposed. Thereby, when the light-emitting element is mounted on the mounting substrate 100a, the reflectance of the metal member 2 with respect to the light emitted from the light-emitting element can be increased, and the light extraction efficiency from the light-emitting device including the light-emitting element and the mounting substrate 100a can be increased.

[0050] Materials such as nickel, palladium, aluminum, silver, and gold can be used for the metal film 21.

[0051] <Manufacturing method of the mounting substrate 100a> With reference to FIGS. 20 to 22, the manufacturing method of the mounting substrate 100a according to the second embodiment will be described.

[0052] FIG. 20 is a flowchart showing an example of the manufacturing method of the mounting substrate 100a. The manufacturing method of the mounting substrate 100a according to the second embodiment mainly differs from the manufacturing method of the mounting substrate 100 according to the first embodiment in that it includes forming a first metal film 211 by plating on the upper surface 2a of the metal member 2 in the ceramic substrate 1 on which at least one of polishing and grinding has been performed (S29). Note that the first metal film 211 is an example of the metal film 21.

[0053] In the manufacturing method of the mounting substrate 100a according to the second embodiment, S21 to S28 and S30 are the same as S11 to S18 and S20 in the manufacturing method of the mounting substrate 100 according to the first embodiment.

[0054] (S29: Forming the first metal film 211 by plating) In S29, the first metal film 211 is formed by plating on the upper surface 2a of the metal member 2 in the ceramic substrate 1 on which at least one of polishing and grinding has been performed in S28. Also, the first metal film 211 is formed by plating on the upper surface 3a of the bonding material 3. FIG. 21 is a schematic perspective view showing an example of forming the first metal film 211 by plating in the manufacturing method of the mounting substrate 100a. FIG. 22 is a schematic cross-sectional view taken along line XXII-XXII in FIG. 21. In the example shown in FIG. 21, for the purpose of showing that the first metal film 211 is an example of the metal film 21, the reference numeral of the first metal film 211 and the reference numeral of the metal film 21 are shown together.

[0055] In the examples shown in FIGS. 21 and 22, the first metal film 211 is formed by plating at a plurality of locations on the upper surface 2a of the metal member 2 that are exposed from the ceramic substrate 1. Also, the second metal film 212 is formed by plating at a plurality of locations on the lower surface 2b of the metal member 2 that are exposed from the ceramic substrate 1. The first metal film 211 and the second metal film 212 can be formed, for example, by electrolytic plating or electroless plating. The plating may be performed through a mask. By the plating process, the first metal film 211 and the second metal film 212 protrude from the ceramic substrate 1 by the thickness of the plating. However, by performing pressing after the plating process, the protrusion of the first metal film 211 and the second metal film 212 from the ceramic substrate 1 can be reduced. The thickness of the first metal film 211 and the second metal film 212 is not particularly limited, but is preferably 0.5 μm or more and 50 μm or less, and particularly preferably 1 μm or more and 30 μm or less.

[0056] [Third Embodiment] <Configuration of the mounting substrate according to the third embodiment> Referring to FIG. 23, the mounting substrate according to the third embodiment will be described. FIG. 23 is a schematic cross-sectional view showing an example of the mounting substrate 100b according to the third embodiment.

[0057] In the mounting substrate 100b according to the third embodiment, the main difference from the mounting substrate 100 according to the first embodiment described above is that the second metal film 212 extends from the upper surface 2a of each metal member 2 to the upper surface 3a of the bonding material 3 and a part of the upper surface 1a of the ceramic substrate 1.

[0058] In the mounting substrate 100b, since the second metal film 212 extends from the upper surface 2a of each metal member 2 to the upper surface 3a of the bonding material 3 and a part of the upper surface 1a of the ceramic substrate 1, the area of the metal part can be made wider than that of the mounting substrate 100. In the mounting substrate 100b, compared with the mounting substrate 100, a metal film 21 having good wettability with respect to the conductive bonding material used when mounting electronic components such as light-emitting elements on the mounting substrate 100b can be arranged from the upper surface 2a of each metal member 2 to the upper surface 3a of the bonding material 3 and a part of the upper surface 1a of the ceramic substrate 1. Thereby, when the conductive bonding material is arranged on the upper surface 2a of the metal member 2 or the like, the wettability of the conductive bonding material on the metal member 2 can be improved. By widening the area where the wettability of the conductive bonding material is good, the connection between the external circuit components, wirings, etc. and the metal member 2 can be made good.

[0059] Also, in the mounting substrate 100b, for example, a metal film 21 having a high reflectance with respect to the light emitted from the light-emitting element can be arranged on the upper surface 2a of each metal member 2 or the like, as compared with the upper surface 2a of the metal member 2 before arranging the metal film 21. Thereby, compared with the upper surface 2a of the metal member 2 before arranging the metal film 21, the area where the metal member 2 has a high reflectance with respect to the light emitted from the light-emitting element can be made wider.

[0060] <Manufacturing method of the mounting substrate 100b> Referring to FIGS. 24 and 25, the manufacturing method of the mounting substrate 100b according to the third embodiment will be described.

[0061] FIG. 24 is a flowchart showing an example of a method for manufacturing the mounting substrate 100b. The method for manufacturing the mounting substrate 100b according to the third embodiment mainly differs from the method for manufacturing the mounting substrate 100 according to the first embodiment in that the second metal film 212 is formed on the upper surface 1a of the ceramic substrate 1 that has been subjected to at least one of polishing and grinding by sputtering. Note that the second metal film 212 is an example of the metal film 21.

[0062] S31 to S38 and S40 in the method for manufacturing the mounting substrate 100b according to the third embodiment are the same as S11 to S18 and S20 in the method for manufacturing the mounting substrate 100 according to the first embodiment.

[0063] (S39: Forming the second metal film 212 by sputtering) In S39, the second metal film 212 is formed by sputtering on the upper surface 2a of the metal member 2 in the ceramic substrate 1 that has been subjected to at least one of polishing and grinding in S38. Also, the second metal film 212 is formed by sputtering on the upper surface 3a of the bonding material 3 and a part of the upper surface 1a of the ceramic substrate 1. FIG. 25 is a schematic cross-sectional view showing an example of forming the second metal film 212 by sputtering in the method for manufacturing the mounting substrate 100b. FIG. 25 shows a cross-section corresponding to the XXII-XXII line in FIG. 21.

[0064] In the example shown in FIG. 25, the second metal film 212 is formed by sputtering on each of a plurality of portions of the upper surface 2a of the metal member 2 that are exposed from the ceramic substrate 1, the upper surface 3a of the bonding material 3, and a part of the upper surface 1a of the ceramic substrate 1.

[0065] In the method for manufacturing the mounting substrate 100b, it may include forming the first metal film 211 on the second metal film 212 formed by sputtering. By forming the first metal film 211 on the second metal film 212, a metal film 21 with a thickness of several μm to several tens of μm, which is thicker compared to the metal film 21 with a thickness of about several μm formed by sputtering, can be formed. By increasing the thickness of the metal film 21, when the light-emitting element is mounted, the reflectance with respect to the light emitted from the light-emitting element can be increased, and the light extraction efficiency from the light-emitting device including the light-emitting element and the mounting substrate 100b can be increased. Also, by forming the first metal film 211 on the second metal film 212, the area where the first metal film 211 can be formed can be widened.

[0066] [Fourth Embodiment] <Configuration of the Mounting Substrate According to the Fourth Embodiment> Referring to FIG. 26, the mounting substrate according to the fourth embodiment will be described. FIG. 26 is a schematic top view showing an example of the mounting substrate 100c according to the fourth embodiment. FIG. 27 is a schematic cross-sectional view taken along line XXVII-XXVII in FIG. 26.

[0067] The mounting substrate 100c according to the fourth embodiment includes a ceramic substrate 1 having two or more recesses 12 formed on the upper surface 1a of the ceramic substrate 1, metal members 2 disposed in the respective recesses 12, and a bonding material 3 disposed between the ceramic substrate 1 and the metal members 2 in the respective recesses 12 to bond the ceramic substrate 1 and the metal members 2. The upper surface 2a of each metal member 2 is exposed from the ceramic substrate 1, and the lower surface 2b of each metal member 2 faces the plane 12a defining the recess 12 of the ceramic substrate 1. From another perspective, the mounting substrate 100c is different from the mounting substrate 100 according to the first embodiment in that it has a ceramic substrate 1 including recesses 12 instead of the through-holes 11 in the first embodiment. The metal member 2 in the mounting substrate 100c is a block body.

[0068] Even in a configuration having the ceramic substrate 1 in which the mounting substrate 100c includes the recess 12, the ceramic substrate 1 arranged so as to surround the outer edge 2c of each metal member 2 can reduce the movement of the conductive bonding material arranged on the metal member 2. Thereby, self-alignment of the electronic component arranged on the metal and thickness control of the conductive bonding material become possible. By enabling self-alignment of the electronic component arranged on the metal and thickness control of the conductive bonding material, in the present embodiment, it is possible to easily arrange the electronic component on the mounting substrate where the metal is exposed. Further, when the ceramic substrate 1 has the recess 12, an effect of reducing the leakage of the bonding material 3 can also be obtained. Further, since the metal member 2 is a block body, the arrangement of the metal member 2 in the recess 12 is facilitated, and the manufacturing of the mounting substrate 100c can be easily performed.

[0069] <Manufacturing method of mounting substrate 100c> With reference to FIGS. 28 to 30, an example of the manufacturing method of the mounting substrate 100c will be described.

[0070] FIG. 28 is a flowchart showing the manufacturing method of the mounting substrate 100c according to the fourth embodiment. The manufacturing method of the mounting substrate 100c according to the fourth embodiment includes preparing a ceramic substrate 1 in which two or more recesses 12 are formed (S41), and arranging the bonding material 3 in each recess 12 formed in the ceramic substrate 1 (S43). Further, the manufacturing method of the mounting substrate 100c includes arranging the metal member 2 in each recess 12 of the ceramic substrate 1 (S44), and sintering the bonding material 3 arranged in each recess 12 of the ceramic substrate 1 (S46).

[0071] The manufacturing method of the mounting substrate 100c includes preparing a metal member 2 (S42), and forming a conductive coating portion 5 that covers at least one of the upper and lower surfaces of the bonding material 3 and the ceramic substrate 1 after the bonding material 3 is disposed and before the bonding material 3 is sintered (S45). Further, the manufacturing method of the mounting substrate 100c includes performing at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 so as to expose the metal member 2 with respect to the upper surface of the ceramic substrate 1 after the bonding material 3 is sintered (S47). Further, the mounting substrate 100c has a plurality of sets including the ceramic substrate 1 and the metal member 2, and the manufacturing method of the mounting substrate 100c includes separating the plurality of sets into individual pieces (S49).

[0072] Hereinafter, the description will focus on the differences from the flowchart showing the manufacturing method of the mounting substrate 100 according to the first embodiment shown in FIG. 3.

[0073] (S41: Preparing the ceramic substrate 1, S42: Preparing the metal member 2) In S41, a ceramic substrate 1 having two or more recesses 12 formed therein is prepared. In S42, a metal member 2 is prepared. FIG. 29 is a schematic cross-sectional view showing an example of each of preparing the ceramic substrate 1 and the metal member 2 in the manufacturing method of the mounting substrate 100c. A plurality of recesses 12 are formed in the ceramic substrate 1. The processing method for forming the recesses 12 in the ceramic substrate 1 can be appropriately selected according to the target shape of the ceramic substrate 1. For example, drilling, laser processing, blasting, etching, etc. can be used. Note that preparing the ceramic substrate 1 (S41) may be preparing a commercially available product if there is a commercially available product of the ceramic substrate 1 having a desired shape and dimensions. Also, preparing the metal member 2 (S42) may be preparing a commercially available product if there is a commercially available product of the metal member 2 having a desired shape and dimensions.

[0074] (S43: Disposing the bonding material 3) In S43, the bonding material 3 is placed in each recess 12 formed in the ceramic substrate 1. FIG. 30 is a schematic cross-sectional view showing an example of placing the bonding material 3 in the manufacturing method of the mounting substrate 100c according to the fourth embodiment.

[0075] (S47: Performing at least one of polishing and grinding on the upper surface 1a of the ceramic substrate 1) In S47, at least one of polishing and grinding of the coating portion 5 and the ceramic substrate 1 is performed on the upper surface 1a of the ceramic substrate 1 after the bonding material 3 is sintered so as to expose the metal member 2. Note that in the manufacturing method of the mounting substrate 100c, polishing and grinding are not performed on the lower surface 1b of the ceramic substrate 1.

[0076] [Fifth Embodiment] <Configuration of the light-emitting device according to the fifth embodiment> Referring to FIG. 31, the light-emitting device according to the fifth embodiment will be described. FIG. 31 is a schematic cross-sectional view showing an example of the light-emitting device 200 according to the fifth embodiment. Note that FIG. 31 shows two light-emitting devices 200 including the light-emitting device 200-1 and the light-emitting device 200-2 before being separated by cutting along the cutting line C.

[0077]

[0078] ​Since the light-emitting device 200 has the mounting substrate 100, the movement of the conductive bonding material disposed on the metal member 2 can be reduced, enabling self-alignment of the electronic components disposed on the metal and thickness control of the conductive bonding material. By enabling self-alignment of the electronic components disposed on the metal and thickness control of the conductive bonding material, in the present embodiment, it is possible to easily dispose the light-emitting element 6 on the mounting substrate where the metal is exposed, and the manufacturing of the light-emitting device 200 can be facilitated. Note that the light-emitting device 200 may include any one of the mounting substrate 100, the mounting substrate 100a, and the mounting substrate 100b.

[0079] The light-emitting device 200 is a device in which the light-emitting element 6 is disposed on the mounting substrate 100 and light can be emitted from the light-emitting element 6. The light-emitting device 200 can emit light from the light-emitting surface 201 in the direction in which the light-emitting surface 201 faces. For one light-emitting device 200, the number of light-emitting elements 6 is not limited to one and may be plural. When the light-emitting device 200 has a plurality of light-emitting elements 6, there is no particular limitation on the arrangement of the plurality of light-emitting elements 6. Depending on the use application of the light-emitting device 200, an arrangement in a uniaxial direction, an arrangement in a biaxial direction, etc. can be appropriately selected.

[0080] In the mounting substrate 100, wirings of various patterns can be formed according to the application. In the light-emitting device 200, the light-emitting element 6 has a pair of electrodes 9 on the same surface side. The surface having the pair of electrodes 9 is face-down mounted toward the upper surface 2a of the metal member 2 in the mounting substrate 100. Hereinafter, each component in the light-emitting device 200 will be described in detail.

[0081] (Light-emitting element 6) The light-emitting element 6 has various semiconductors such as III-V group compound semiconductors and II-VI group compound semiconductors. As the semiconductor, In X Al Y Ga 1-X-YIt is preferable to use a nitride semiconductor such as N(0≦X, 0≦Y, X+Y≦1), and InN, AlN, GaN, InGaN, AlGaN, InGaAlN, etc. can also be used. The light-emitting element 6 is, for example, an LED (Light Emitting Diode) or an LD (Laser Diode). From the viewpoints of luminous efficiency and excitation of the wavelength conversion material, etc., the emission peak wavelength of the light-emitting element 6 is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less, and even more preferably 450 nm or more and 475 nm or less.

[0082] (Light-transmitting member 7) The light-transmitting member 7 is, for example, a substantially rectangular member in a top view. The light-transmitting member 7 is provided so as to cover the upper surface of the light-emitting element 6. In the example shown in FIG. 31, the upper surface of the light-transmitting member 7 corresponds to the light-emitting surface 201. The light-transmitting member 7 preferably contains a wavelength conversion material that wavelength-converts at least a part of the light from the light-emitting element 6. The light-transmitting member 7 can be configured using a light-transmitting resin material, an inorganic substance such as ceramics or glass. As the resin material, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, an epoxy-modified resin, or a phenolic resin can be used. In particular, a silicone resin or its modified resin having excellent light resistance and heat resistance is preferable. Here, the light-transmittance preferably means a property of transmitting 60% or more of the light from the light-emitting element 6. Also, the light-transmitting member 7 can use a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin. Further, the light-transmitting member 7 may contain a light diffusing substance in the above resin. For example, the light-transmitting member 7 may be a resin material, ceramics, glass, etc. containing a wavelength conversion material, a sintered body of a wavelength conversion material, etc. Also, the light-transmitting member 7 may be a multi-layered one in which a resin layer is disposed on the upper surface side of a molded body of resin, ceramics, glass, etc.

[0083] Examples of the wavelength conversion material contained in the light-transmitting member 7 include yttrium aluminum garnet-based phosphors (for example, (Y,Gd)3(Al,Ga)5O 12:Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphor (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphor (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphor (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphor (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphor (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphor (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), etc., oxynitride-based phosphors such as LSN-based phosphor (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphor (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphor (e.g., SrLiAl3N4:Eu), CASN-based phosphor (e.g., CaAlSiN3:Eu) or SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu), etc., nitride-based phosphors, KSF-based phosphor (e.g., K2SiF6:Mn), KSAF-based phosphor (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.), or fluoride-based phosphors such as MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc. can be used. The above wavelength conversion materials are particles. Also, one of these wavelength conversion materials can be used alone, or two or more of these wavelength conversion materials can be combined and used.

[0084] In the light-emitting device 200, a blue LED is used as the light-emitting element 6, and the translucent member 7 contains a wavelength-converting substance that wavelength-converts the light emitted from the light-emitting element 6 into yellow, thereby emitting white light. As the light-diffusing substance contained in the translucent member 7, for example, titanium oxide, barium titanate, aluminum oxide, silicon oxide, or the like can be used.

[0085] (Light reflection member 8) The light reflection member 8 is a member having light reflectivity. The light reflection member 8 is disposed so as to cover the upper surface 1a of the ceramic substrate 1 on the mounting substrate 100 and the side surfaces of the light-emitting element 6 and the translucent member 7, respectively. Further, the light reflection member 8 is disposed so as to expose the light-emitting surface 201. As an example, the light reflection member 8 is also disposed between the lower surface of the light-emitting element 6 and the upper surface 1a of the ceramic substrate 1 on the mounting substrate 100.

[0086] In order to effectively utilize the light from the light-emitting element 6, the light reflection member 8 preferably has a high reflectivity. The light reflection member 8 is preferably white. The reflectivity of the light reflection member 8 is preferably, for example, 90% or more, more preferably 94% or more, at the wavelength of the light emitted by the light-emitting element 6.

[0087] As the resin of the light reflection member 8, for example, a thermoplastic resin such as an acrylic resin, a polycarbonate resin, a cyclic polyolefin resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, or a polyester resin, or a thermosetting resin such as an epoxy resin or a silicone resin can be used. Further, as the light-diffusing material, for example, a known material such as titanium oxide, silicon oxide, aluminum oxide, zinc oxide, or glass can be used.

[0088] (Pair of electrodes 9) The pair of electrodes 9 are connected to the metal member 2 of the mounting substrate 100 via the metal film 21 by the conductive bonding material 10. One of the pair of electrodes 9 is a p-electrode, and the other is arranged at a distance that does not electrically short-circuit with the n-electrode. As an example, the pair of electrodes 9 are configured to arrange the p-electrode and the n-electrode at one location each, but it may also be configured such that either one is at two locations and the other is at one location. The shortest distance between the pair of electrodes 9 is preferably the same as the width of the upper surface 1a of the ceramic substrate 1, but it can also be made narrower or wider. By setting the shortest distance between the pair of electrodes 9 to be the same as the width of the upper surface 1a of the ceramic substrate 1, electricity and heat from the pair of electrodes 9 can be efficiently transmitted to the metal member 2 and the bonding material 3. Also, by making the shortest distance between the pair of electrodes 9 narrower than the width of the upper surface 1a of the ceramic substrate 1, it is easier to prevent short-circuiting between the metal members 2. Also, by making the shortest distance between the pair of electrodes 9 wider than the width of the upper surface 1a of the ceramic substrate 1, it is easier to prevent short-circuiting between the pair of electrodes 9. On the other hand, the area of the pair of electrodes 9 is preferably the same as the area of the upper surface 2a of the metal member 2 and the area of the upper surface 3a of the bonding material 3, but it can also be made narrower or wider. By making the area of the pair of electrodes 9 the same as the area of the upper surface 2a of the metal member 2 and the area of the upper surface 3a of the bonding material 3, the positional deviation between the light-emitting element 6 and the metal member 2 can be reduced. Also, by making the area of the pair of electrodes 9 narrower than the area of the upper surface 2a of the metal member 2 and the area of the upper surface 3a of the bonding material 3, electricity and heat from the pair of electrodes 9 can be efficiently transmitted to the metal member 2 and the bonding material 3. Also, by making the area of the pair of electrodes 9 wider or narrower than the area of the upper surface 2a of the metal member 2 and the area of the upper surface 3a of the bonding material 3, the size of the mounting substrate can be reduced.

[0089] (Conductive bonding material 10) The conductive bonding material 10 electrically connects a pair of electrodes 9 and the metal member 2 of the mounting substrate 100. The conductive bonding material 10 may be disposed on either the side of the pair of electrodes 9 or the side of the metal member 2 of the mounting substrate 100. Also, the shape, size, and number of the conductive bonding material 10 can all be appropriately set as long as they can be disposed within the range of the pair of electrodes 9. Further, the size of the conductive bonding material 10 can be appropriately adjusted according to the size of the light-emitting element 6, the required light-emitting output of the light-emitting element, etc. For example, the diameter of one of the conductive bonding materials 10 can be on the order of several tens of μm to several hundreds of μm.

[0090] The conductive bonding material 10 can be formed of at least one selected from, for example, Au, Ag, Cu, Al, Sn, Pt, Zn, Ni, or an alloy thereof, and can be formed by, for example, a stud bump known in the art. The stud bump can be formed by a stud bump bonder, a wire bonding apparatus, or the like. Also, the conductive bonding material 10 may be formed by a method known in the art such as electrolytic plating, electroless plating, vapor deposition, sputtering, etc.

[0091] As an example, the conductive bonding material 10 is joined here via a metal film 21. Examples of the metal film 21 used here include solders such as tin-bismuth-based, tin-copper-based, tin-silver-based, gold-tin-based, alloys mainly composed of Au and Sn, alloys mainly composed of Au and Si, eutectic alloys such as alloys mainly composed of Au and Ge, or paste materials such as silver, gold, palladium, anisotropic conductive materials such as ACP and ACF, brazing materials of low melting point metals, conductive adhesives combining these, conductive composite adhesives, etc.

[0092] Note that in the light-emitting device 200, one light-emitting element 6 is used as one unit for controlling the brightness and lighting and extinguishing, but the number of light-emitting elements 6 included in one unit may be one or a plurality. For example, four light-emitting elements 6 arranged in one row and four columns, or four light-emitting elements 6 arranged in two rows and two columns, or nine light-emitting elements 6 arranged in three rows and three columns can be used as one unit, and the number of light-emitting elements 6 is not limited.

[0093] <Method for manufacturing the light-emitting device 200> Referring to FIG. 32, a method for manufacturing the light-emitting device 200 will be described. FIG. 32 is a flowchart showing an example of the method for manufacturing the light-emitting device 200.

[0094] The method for manufacturing the light-emitting device 200 includes preparing a ceramic substrate 1 in which two or more through-holes 11 or recesses are formed (S51), and disposing a bonding material 3 in each of the through-holes 11 or recesses formed in the ceramic substrate 1 (S53). The method for manufacturing the light-emitting device 200 also includes disposing a metal member 2 in each of the through-holes 11 or recesses of the ceramic substrate 1 (S54), and sintering the bonding material 3 disposed in each of the through-holes 11 or recesses of the ceramic substrate 1 (S56). The method for manufacturing the light-emitting device 200 also includes disposing a light-emitting element 6 so as to be electrically connected to each of the metal members 2 in the ceramic substrate 1 in which the bonding material 3 is sintered (S60).

[0095] The manufacturing method of the light-emitting device 200 shown in FIG. 32 includes preparing a metal member 2 (S52), and forming a conductive coating portion 5 that covers at least one of the upper and lower surfaces of the bonding material 3 and the ceramic substrate 1 after the bonding material 3 is disposed and before the bonding material 3 is sintered (S55). The manufacturing method of the light-emitting device 200 shown in FIG. 32 also includes performing at least one of polishing and grinding on the coating portion 5 and the ceramic substrate 1 so as to expose the metal member 2 with respect to the upper surface of the ceramic substrate 1 after the bonding material 3 is sintered (S57). The manufacturing method of the light-emitting device 200 shown in FIG. 32 further includes performing at least one of polishing and grinding on the coating portion 5 and the ceramic substrate 1 so as to expose the metal member 2 with respect to the lower surface of the ceramic substrate 1 after the bonding material 3 is sintered (S58). The manufacturing method of the light-emitting device 200 shown in FIG. 28 includes forming a first metal film 211 by plating on the upper surface 2a of the metal member 2 in the ceramic substrate 1 on which at least one of polishing and grinding has been performed (S59), and disposing a light reflection member 8 on the light-emitting element 6 disposed on the metal member 2 (S61). In the example shown in FIG. 32, the light-emitting device 200 has a plurality of sets including a ceramic substrate 1 and a metal member 2, and the manufacturing method of the light-emitting device 200 includes separating the plurality of sets into individual pieces (S62).

[0096] S41 to S48 in the manufacturing method of the light-emitting device 200 shown in FIG. 32 are the same as S11 to S18 in the manufacturing method of the mounting substrate 100 according to the first embodiment.

[0097] (S59: Forming the first metal film 211 by plating) In S59, the first metal film 211 is formed by plating on the upper surface 2a of the metal member 2 in the ceramic substrate 1 on which at least one of polishing and grinding has been performed in S58.

[0098] (S60: Disposing the light-emitting element 6) In S60, the light-emitting element 6 is arranged so as to be electrically connected to each metal member 2 in the ceramic substrate 1 on which the bonding material 3 is sintered. In S60, a pair of electrodes 9 are connected to the first metal film 211 formed on the upper surface 2a of the metal member 2 using the conductive bonding material 10. Note that a light-transmissive member 7 is disposed in advance on the light-emitting element 6. When bonding the light-transmissive member 7 to the light-emitting element 6, a light-transmissive bonding material can be used.

[0099] (S61: Arranging the light reflection member 8) In S61, the light reflection member 8 is arranged so as to cover the upper surface 1a of the ceramic substrate 1 of the mounting substrate 100 and to cover the side surfaces of the light-emitting element 6 and the light-transmissive member 7 respectively. In S61, the light reflection member 8 surrounds the light-emitting element 6 and is arranged so as to expose the upper surface of the light-transmissive member 7 that becomes the light-emitting surface 201 of the light-emitting device 200. The light reflection member 8 is arranged to be rectangular in plan view.

[0100] (S62: Separating into individual pieces) In S62, a plurality of light-emitting devices 200 are separated into individual pieces. In the manufacturing method of the light-emitting device 200, by including separating a plurality of light-emitting devices 200 into individual pieces, a large number of light-emitting devices 200 can be taken out from one ceramic substrate 1, so that the manufacturing efficiency of the light-emitting device 200 can be increased. In S62, the light-emitting devices 200 can be separated into individual pieces by cutting between the light-emitting devices 200 in the plurality of light-emitting devices 200. As a cutting method for separation, for example, a method using a disk-shaped rotary blade, an ultrasonic cutter, laser light irradiation, a blade, etc. can be used. By separating into individual pieces (S62), the side surface 2d of the metal member 2 and the side surface of the ceramic substrate 1 in the exposed portion from the ceramic substrate 1 are flush.

[0101] [Sixth Embodiment] <Configuration of the light-emitting device according to the sixth embodiment> Referring to FIGS. 33 and 34, the light-emitting device according to the sixth embodiment will be described. FIG. 33 is a schematic top view showing an example of the light-emitting device 200a according to the sixth embodiment. FIG. 34 is a schematic cross-sectional view taken along line XXXIV-XXXIV in FIG. 33.

[0102] The light-emitting device 200a mainly differs from the light-emitting device 200 according to the fifth embodiment in that it includes the mounting substrate 100c according to the fourth embodiment and a pair of wires 13 electrically connected to the respective metal members 2.

[0103] By having the mounting substrate 100c, the light-emitting device 200a can reduce the movement of the conductive bonding material disposed on the metal member 2, enabling self-alignment of the electronic components disposed on the metal and thickness control of the conductive bonding material. By enabling self-alignment of the electronic components disposed on the metal and thickness control of the conductive bonding material, in this embodiment, it is possible to easily dispose the light-emitting element 6 on the mounting substrate where the metal is exposed, facilitating the manufacture of the light-emitting device 200a. Further, since the ceramic substrate 1 has the recess 12, an effect of reducing the leakage of the bonding material 3 can also be obtained.

[0104] As described above, the present invention has been described based on specific embodiments, but these are merely presented as examples, and the present invention is not limited by the above embodiments. The above embodiments can be implemented in various other forms, and various combinations, omissions, replacements, additions, changes, etc. can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention and are included in the invention described in the claims and its equivalent scope.

[0105] The mounting substrate and the light-emitting device according to the embodiments of the present disclosure can be used for a light distribution variable type headlamp light source. In addition, the mounting substrate and the light-emitting device according to the embodiments of the present disclosure can be used for a backlight light source of a liquid crystal display, various lighting fixtures, large displays, various display devices such as advertisements and wayfinding signs, and further, image reading devices such as digital video cameras, facsimiles, copiers, scanners, and projector devices.

[0106] In addition to the above embodiments, the following appendices are further disclosed. <Item 1> A ceramic substrate in which two or more through holes are formed, metal members disposed in the respective through holes, and a bonding material disposed between the ceramic substrate and the metal members in the respective through holes for bonding the ceramic substrate and the metal members, wherein the upper surface and the lower surface of each of the metal members are exposed from the ceramic substrate, and the ceramic substrate is disposed so as to surround the outer edge of each of the metal members in a top view, which is a mounting substrate. <Item 2> The mounting substrate according to Item 1, wherein the bonding material is an active metal brazing material. <Item 3> The mounting substrate according to Item 1 or Item 2, wherein a metal film is disposed on the upper surface of each of the metal members. <Item 4> The mounting substrate according to Item 3, wherein the metal film extends from the upper surface of each of the metal members to a part of the upper surface of the ceramic substrate. <Item 5> The mounting substrate according to any one of Items 1 to 4, wherein a part of the side surface of each of the metal members is exposed from the ceramic substrate. <Item 6> The mounting substrate according to Item 5, which has a step surface that connects to the upper end of the side surface of each of the metal members and is located below the upper surface, and a part of the ceramic substrate is disposed on the step surface. <Item 7> A mounting substrate having a ceramic substrate with two or more recesses formed on the upper surface thereof, metal members disposed in respective recesses, and a bonding material disposed between the ceramic substrate and the metal members in respective recesses for bonding the ceramic substrate and the metal members, wherein the upper surface of each of the metal members is exposed from the ceramic substrate, and the lower surface of each of the metal members faces a plane defining the recess in the ceramic substrate. <Item 8> A light-emitting device having the mounting substrate according to any one of Items 1 to 7, and light-emitting elements disposed so as to be electrically connected to respective ones of the metal members. <Item 9> A method for manufacturing a mounting substrate, including: preparing a ceramic substrate having two or more through-holes or recesses formed therein; disposing a bonding material in each of the through-holes or the recesses formed in the ceramic substrate; disposing metal members in each of the through-holes or the recesses of the ceramic substrate; and sintering the bonding material disposed in each of the through-holes or the recesses of the ceramic substrate. <Item 10> The method for manufacturing a mounting substrate according to Item 9, including forming a conductive coating portion covering at least one of the upper surface and the lower surface of the bonding material and the ceramic substrate after the bonding material is disposed and before the bonding material is sintered. <Item 11> The method for manufacturing a mounting substrate according to Item 10, including performing at least one of polishing and grinding of the coating portion and the ceramic substrate so as to expose the metal member with respect to the upper surface of the ceramic substrate after the bonding material is sintered. <Item 12> The method for manufacturing a mounting substrate according to Item 11, including performing at least one of polishing and grinding of the coating portion and the ceramic substrate so as to expose the metal member with respect to the lower surface of the ceramic substrate after the bonding material is sintered. <Item 13> The method for manufacturing a mounting substrate according to Item 11 or Item 12, including forming a first metal film by plating on the upper surface of the metal member in the ceramic substrate on which at least one of the polishing and the grinding has been performed. <Item 14> The method for manufacturing a mounting substrate according to any one of Items 11 to 13, including forming a second metal film on the upper surface of the ceramic substrate on which at least one of the polishing and the grinding has been performed by sputtering. <Item 15> The method for manufacturing a mounting substrate according to Item 14, including forming a first metal film on the second metal film formed by sputtering by plating. <Item 16> The method for manufacturing a mounting substrate according to any one of Items 9 to 15, wherein the mounting substrate has a plurality of sets including the ceramic substrate and the metal member, and includes separating the plurality of sets into individual pieces. <Item 17> A method for manufacturing a light-emitting device, including: preparing a ceramic substrate in which two or more through-holes or recesses are formed; disposing a bonding material in each of the through-holes or the recesses formed in the ceramic substrate; disposing a metal member in each of the through-holes or the recesses of the ceramic substrate; sintering the bonding material disposed in each of the through-holes or the recesses of the ceramic substrate; and disposing a light-emitting element so as to be electrically connected to each of the metal members in the ceramic substrate in which the bonding material has been sintered.

Explanation of Reference Numerals

[0107] 1 Ceramic substrate 1a Upper surface of the ceramic substrate 1b Lower surface of the ceramic substrate 11 Through-hole 12 Recess 2 Metal member 2a Upper surface of the metal member 2b Lower surface of the metal member 2c Outer edge of the metal member 2d Side surface 2d1 Upper end 21 Metal film 211 First metal film 212 Second metal film 3 Bonding material 3a Upper surface of the bonding material Lower surface of the bonding material 3b Four-step surface Covering portion 5 Light-emitting element 6 Light-transmissive member 8 Light-reflective member 10 Pair of electrodes 12 Conductive bonding material 14 Wire 16 Mounting substrates 100, 100a, 100b, 100c Set 101 Light-emitting devices 200, 200-1, 200-2 Light-emitting surface 201 Cutting line C

Claims

1. A ceramic substrate formed with two or more through-holes; Metal members disposed in respective ones of the through-holes; A bonding material disposed between the ceramic substrate and the metal members in respective ones of the through-holes for bonding the ceramic substrate and the metal members; and having Part of each of the upper surface, lower surface, and side surface of each of the metal members is exposed from the ceramic substrate, The exposed portions from the ceramic substrate on the side surface and the lower surface of the metal member are continuous, and the side surface of the metal member and the side surface of the ceramic substrate at the exposed portion from the ceramic substrate are flush, A mounting substrate in which the ceramic substrate is disposed so as to surround the outer edge of each of the metal members in a top view.

2. The mounting substrate according to claim 1, wherein the bonding material is an active metal brazing material.

3. The mounting substrate according to claim 1, wherein a metal film is disposed on the upper surface of each of the metal members.

4. The mounting substrate according to claim 3, wherein the metal film extends from the upper surface of each of the metal members to a part of the upper surface of the ceramic substrate.

5. The mounting substrate according to claim 1, wherein a part of the side surface of each of the metal members is exposed from the ceramic substrate.

6. Having a stepped surface that connects to the upper end of the side surface of each of the metal members and is located below the upper surface of the metal member, The mounting substrate according to claim 5, wherein a part of the ceramic substrate is disposed on the stepped surface.

7. A ceramic substrate formed with two or more recesses on the upper surface; Metal members disposed in respective ones of the recesses; A bonding material disposed between the ceramic substrate and the metal members in respective ones of the recesses for bonding the ceramic substrate and the metal members; and having The upper surface of each of the metal members is exposed from the ceramic substrate, and the lower surface of each of the metal members faces the plane defining the recess of the ceramic substrate, a mounting substrate.

8. A light-emitting device having the mounting substrate according to any one of claims 1 to 7, and Light-emitting elements disposed so as to be electrically connected to respective ones of the metal members.

9. Preparing a ceramic substrate formed with two or more through-holes or recesses; Disposing a bonding material in each of the through-holes or the recesses formed in the ceramic substrate; placing a metal member in each of the through-holes or the recesses of the ceramic substrate; a method for manufacturing a mounting substrate, comprising sintering the bonding material disposed in each of the through-holes or the recesses of the ceramic substrate.

10. The method for manufacturing a mounting substrate according to claim 9, further comprising forming a conductive coating portion covering at least one of the upper and lower surfaces of the bonding material and the ceramic substrate after the bonding material is disposed and before sintering the bonding material.

11. The method for manufacturing a mounting substrate according to claim 10, further comprising performing at least one of polishing and grinding the coating portion and the ceramic substrate so as to expose the metal member on the upper surface of the ceramic substrate after the bonding material is sintered.

12. The method for manufacturing a mounting substrate according to claim 11, further comprising performing at least one of polishing and grinding the coating portion and the ceramic substrate so as to expose the metal member on the lower surface of the ceramic substrate after the bonding material is sintered.

13. The method for manufacturing a mounting substrate according to claim 11, further comprising forming a first metal film on the upper surface of the metal member in the ceramic substrate on which at least one of the polishing and the grinding has been performed by plating.

14. The method for manufacturing a mounting substrate according to claim 11, further comprising forming a second metal film on the upper surface of the ceramic substrate on which at least one of the polishing and the grinding has been performed by sputtering.

15. The method for manufacturing a mounting substrate according to claim 14, further comprising forming a first metal film on the second metal film formed by sputtering by plating.

16. The method for manufacturing a mounting substrate according to claim 9, wherein the mounting substrate has a plurality of sets including the ceramic substrate and the metal member, and the method further comprises separating the plurality of sets into individual pieces.

17. preparing a ceramic substrate having two or more through-holes or recesses; placing a bonding material in each of the through-holes or the recesses formed in the ceramic substrate; placing a metal member in each of the through-holes or the recesses of the ceramic substrate; sintering the bonding material disposed in each of the through-holes or the recesses of the ceramic substrate; A method of manufacturing a light-emitting device, including arranging a light-emitting element so as to be electrically connected to each of the metal members in the ceramic substrate in which the bonding material is sintered.

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