Antenna structure and plasma generating device using the same
The antenna structure with segmented capacitive elements and cooling water flow paths addresses instability and durability issues in large-area plasma generation, ensuring stable and efficient plasma production.
Patent Information
- Application Number
- JP2025075764
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2020-02-19
- Filing Date
- 2025-04-30
- Publication Date
- 2025-08-05
- Estimated Expiration
- 2041-02-19
AI Technical Summary
Conventional inductively coupled plasma generators face issues with unstable plasma control, reduced durability, and damage from high voltage, current, and heat due to factors like internal/external pressure, gas type, and power consumption, especially in large volume or area applications.
An antenna structure comprising multiple segments and capacitive elements, designed with specific radii of curvature and lengths, is used to induce plasma, featuring a capacitive load connection and cooling water flow paths to manage voltage, heat, and reduce energy loss.
The solution enables stable plasma generation over large areas, reduces voltage and energy consumption, prevents damage, and maintains plasma for extended periods while ensuring safe operation.
Smart Images

Figure 2025114669000001_ABST
Abstract
Description
[Technical Field]
[0001] The present invention relates to an antenna structure and a plasma generation device using the same, and more specifically to a device that uses an antenna structure including multiple antenna segments and multiple capacitive elements to generate an induced electric field and an induced magnetic field to induce the generation of plasma. [Background technology]
[0002] Plasma-based technologies are used in a variety of industrial fields, including not only the fields of semiconductors, displays, and medical equipment, but also environmental technology fields such as air, water, and soil purification, and energy technology fields such as solar cells and hydrogen energy.
[0003] There are a wide variety of methods for generating such plasma, including direct current discharges such as corona discharge, glow discharge, and arc discharge, alternating current discharges such as capacitively coupled discharge and inductively coupled discharge, shock waves, and high-energy beams. Among these, the inductively coupled method is gaining attention for its high versatility due to its simple structure.
[0004] Meanwhile, conventional inductively coupled plasma generators have problems such as unstable plasma control and reduced durability due to factors such as internal / external pressure, type and properties of supplied gas, power applied to the device, current / voltage flowing through components, and power consumption. Furthermore, these problems become more serious as the volume and area of the plasma generator increase, and solutions to these problems are needed. Summary of the Invention [Problem to be solved by the invention]
[0005] One problem to be solved by the present invention is to provide an antenna structure consisting of a plurality of segments and capacitive elements, and a plasma generation device using the same.
[0006] One problem to be solved by the present invention is to provide an antenna structure having a large volume or a large area for generating plasma over a wide area, and a plasma generation device using the same.
[0007] One problem to be solved by the present invention is to provide an antenna structure having a voltage distribution structure for safely generating plasma at a high voltage formed in an inductor due to a high driving frequency or a large input current, and a plasma generation device using the same.
[0008] One problem to be solved by the present invention is to provide a plasma generating device that prevents the plasma generating device from being damaged by heat generated by induced plasma.
[0009] One problem to be solved by the present invention is to provide a plasma generating device that effectively absorbs heat generated while the plasma is being induced by using cooling water.
[0010] The problems to be solved by the present invention are not limited to those described above, and problems not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Means for solving the problem]
[0011] According to one aspect of the present specification, an antenna structure for applying AC power to induce plasma in a chamber can be provided, comprising: first and second antenna segments arranged on a first plane intersecting an imaginary central axis so as to have a first radius of curvature and a second radius of curvature based on the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length from the other end of the first capacitive load that corresponds to the first length, and the sum of the first length and the second length is shorter than the circumference of a circle whose radius is the first radius of curvature or the second radius of curvature.
[0012] According to yet another aspect of the present specification, there can be provided a plasma generation device that applies an AC power source to induce plasma in a chamber, the plasma generation device comprising a first antenna structure arranged to have a first radius of curvature based on an imaginary central axis, the first antenna structure including a plurality of first antenna segments having the first radius of curvature and at least one first capacitive load arranged between the plurality of first antenna segments so that the plurality of first antenna segments are electrically connected in series, the plurality of first antenna segments at least partially overlapping with an imaginary first plane that is perpendicular to the central axis, each of the plurality of first antenna segments having a first length, and the total length of the plurality of first antenna segments being shorter than the circumference of a circle whose radius is the first radius of curvature.
[0013] According to yet another aspect of the present specification, an antenna structure that is disposed outside a plasma generation unit and provides an induced electric field to induce plasma inside the plasma generation unit includes a first antenna formed along an outer wall surface of the plasma generation unit and inducing an electric field, wherein a first cooling water flow path for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generation unit and is in surface contact with the plasma generation unit via the first inner diameter surface, the first antenna includes a first surface that defines contact with the first cooling water flow path and is parallel to the outer wall of the plasma generation unit and the first inner diameter surface, and the antenna structure can provide an antenna structure that absorbs heat from the plasma generation unit via the inner diameter surface and the first surface to prevent the temperature of the plasma generation unit from rising due to the plasma.
[0014] The means for solving the problem of the present invention are not limited to the above-mentioned means, and the means for solving the problem of the present invention not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Effects of the Invention]
[0015] According to the present invention, the plasma generating device can reduce the maximum voltage applied to the antenna by the capacitive element in the antenna structure when driven.
[0016] According to the present invention, when the plasma generating device is driven, a high electromotive force is induced by the antenna structure, and the plasma can be maintained for a longer period of time.
[0017] According to the present invention, the plasma generator can reduce the voltage applied to the antenna structure when driven, thereby reducing the energy loss generated by the plasma.
[0018] According to the present invention, large area plasma induction can be used to perform large area displays or multiple semiconductor processes.
[0019] According to the present invention, it is possible to reduce the power consumption generated in the antenna structure in the plasma generating device.
[0020] According to the present invention, the potential difference between the antennas in the antenna structure is reduced, and high density plasma can be generated more safely.
[0021] According to the present invention, even if the antenna structure is driven by a high-power high-frequency power source, damage to the chamber or the dielectric tube caused by the drive can be prevented.
[0022] According to the present invention, even if heat is generated by plasma, the effective heat absorption function of the antenna structure can prevent thermal damage to the plasma generating device.
[0023] The present invention allows the antenna structure to perform an effective cooling function while reducing the effects of parasitic capacitance.
[0024] According to the present invention, the antenna structure can prevent arc discharge from occurring in the plasma generating device while performing an effective cooling function.
[0025] The effects of the present invention are not limited to those described above. Other effects not mentioned will be clearly understood by those skilled in the art from the present specification and the accompanying drawings. [Brief explanation of the drawings]
[0026] [Figure 1] 1 is a diagram of a plasma system according to one embodiment of the present disclosure. [Figure 2] FIG. 1 is a diagram of an implementation of a plasma system according to an embodiment of the present disclosure. [Figure 3] FIG. 2 illustrates a plasma generation unit according to one embodiment of the present specification. [Figure 4] FIG. 1 is a diagram of an RF power supply according to one embodiment of the present disclosure. [Figure 5-6]1 is a diagram illustrating a method for arranging antenna segments according to an embodiment of the present disclosure. [Figure 7-10] 1 is a diagram of an antenna structure including an antenna segment and a capacitive element according to an embodiment of the present disclosure. [Figure 11] FIG. 1 is a diagram of an equivalent circuit of an antenna structure according to an embodiment of the present disclosure. [Figure 12] FIG. 10 is a graph showing voltage as a function of position within an antenna structure according to an embodiment of the present disclosure. [Figure 13] FIG. 10 is a graph illustrating voltage as a function of position within an antenna structure including a capacitive element according to an embodiment of the present disclosure. [Figure 14] 1 is a diagram of an antenna structure having a square cross section according to one embodiment of the present disclosure. [Figure 15] 1 is a diagram of a cross section of an antenna structure according to one embodiment of the present disclosure; [Figure 16] 1A-1C are diagrams of antenna structures having square and circular cross sections according to an embodiment of the present disclosure. [Figure 17-18] 1A and 1B are diagrams illustrating cross sections of an antenna structure having at least two or more cross-sectional shapes according to an embodiment of the present specification. [Figure 19-22] 10A-10C are diagrams illustrating a method of connecting antennas having different cross sections within an antenna structure according to an embodiment of the present disclosure. [Figure 23] 1 illustrates a heat transfer member according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION
[0027] According to one aspect of the present specification, an antenna structure for applying AC power to induce plasma in a chamber can be provided, comprising: first and second antenna segments arranged on a first plane intersecting an imaginary central axis so as to have a first radius of curvature and a second radius of curvature based on the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length from the other end of the first capacitive load that corresponds to the first length, and the sum of the first length and the second length is shorter than the circumference of a circle whose radius is the first radius of curvature or the second radius of curvature.
[0028] The above-mentioned objects, features, and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. Although the present invention can be modified in various ways and can have various embodiments, the following will illustrate specific embodiments with reference to the drawings and will be described in detail.
[0029] The examples described in this specification are intended to clearly explain the spirit of the present invention to those skilled in the art to which the present invention pertains, and the present invention is not limited to the examples described in this specification. The scope of the present invention should be interpreted as including amendments or modifications that do not deviate from the spirit of the present invention.
[0030] The drawings attached to this specification are intended to facilitate the explanation of the present invention, and the shapes shown in the drawings may be exaggerated as necessary to facilitate understanding of the present invention, and therefore the present invention is not limited by the drawings.
[0031] If it is determined that a detailed description of known functions or configurations related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Furthermore, numerals (e.g., first, second, etc.) used in the description of this specification are merely identification symbols for distinguishing one component from another.
[0032] Furthermore, the suffixes "unit," "module," and "section" used in the following description for components are given or used interchangeably solely for the ease of drafting the specification, and do not have any distinct meanings or roles.
[0033] According to one aspect of the present specification, an antenna structure for applying AC power to induce plasma in a chamber can be provided, comprising: first and second antenna segments arranged on a first plane intersecting an imaginary central axis so as to have a first radius of curvature and a second radius of curvature based on the central axis; and a first capacitive load electrically connecting the first and second antenna segments in series, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length from the other end of the first capacitive load that corresponds to the first length, and the sum of the first length and the second length is shorter than the circumference of a circle whose radius is the first radius of curvature or the second radius of curvature.
[0034] Here, the first and second radii of curvature may be equal to each other, the first and second lengths may be equal to each other, and the first antenna segment and the second antenna segment may have the same inductance.
[0035] Also, here, the antenna structure may include a third antenna segment arranged on the first plane to have a third radius of curvature larger than the first radius of curvature, a fourth antenna segment arranged on the first plane to have a fourth radius of curvature larger than the second radius of curvature, and a second capacitive load electrically connecting the third and fourth antenna segments in series, wherein the third antenna segment extends from one end of the second capacitive load by a third length longer than the first length, and the fourth antenna segment extends from the other end of the second capacitive load by a fourth length longer than the second length.
[0036] Also, here, a line passing through the first and second capacitive loads may pass through the central axis.
[0037] In addition, the central angle of the sector formed by the first antenna segment as an arc may be equal to the central angle of the sector formed by the third antenna segment as an arc.
[0038] Here, the antenna structure may also include an inter-turn capacitive load that electrically connects the second antenna segment and the third antenna segment in series.
[0039] Here, the first and second capacitive loads and the inter-turn capacitive load may have the same capacitance.
[0040] Here, the antenna structure may include a fifth antenna segment having the first radius of curvature based on the central axis, a sixth antenna segment having the second radius of curvature, and a third capacitive load disposed between the fifth and sixth antenna segments and electrically connecting the fifth and sixth antenna segments in series, wherein the fifth antenna segment and the sixth antenna segment are disposed on a second plane intersecting the central axis, and the first plane and the second plane may be different planes from each other.
[0041] The antenna may further include a first interlayer capacitive load that electrically connects the second antenna segment and the fifth antenna segment in series.
[0042] Furthermore, here, the antenna structure may include a seventh antenna segment having the first radius of curvature based on the central axis, an eighth antenna segment having the second radius of curvature, a fourth capacitive load arranged between the seventh and eighth antenna segments and electrically connecting the seventh and eighth antenna segments in series, and a second interlayer capacitive load electrically connecting the sixth antenna segment and the seventh antenna segment in series, wherein the seventh antenna segment and the eighth antenna segment are arranged on a third plane that intersects the central axis and is different from the first plane and the second plane, and the first interlayer capacitive load and the second interlayer capacitive load may have a predetermined angle based on the central axis.
[0043] Also, here, the first antenna segment may extend from one end to the other end, and the other end of the first antenna segment may be electrically connected to one end of the first capacitive load, and the second antenna segment may extend from one end to the other end, and one end of the second antenna segment may be electrically connected to the other end of the first capacitive load.
[0044] In addition, when the AC power is applied to the antenna structure, the maximum voltage of the other end of the first antenna segment relative to the reference node may correspond to the maximum voltage of the other end of the second antenna segment relative to the reference node.
[0045] Further, here, when the AC power supply is applied to the antenna structure, the voltage at the other end of the second antenna segment relative to one end of the second antenna segment may correspond to the voltage at the other end of the first antenna segment relative to one end of the first antenna segment.
[0046] In addition, when the AC power is applied to the antenna structure, the magnitude of the maximum voltage at the other end of the first antenna segment relative to the reference node may correspond to the magnitude of the maximum voltage at one end of the second antenna segment relative to the reference node.
[0047] Furthermore, at any time after the AC power is applied to the antenna structure, the voltage at the other end of the first antenna segment relative to the reference node and the voltage at one end of the second antenna segment relative to the reference node may have opposite signs.
[0048] In addition, the antenna structure includes a first point located between one end and the other end of the first antenna segment and a second point located between one end and the other end of the second antenna segment, and when the AC power is applied to the antenna structure, the maximum voltage of the first point with respect to the reference node may correspond to the maximum voltage of the second point with respect to the reference node.
[0049] In addition, at any time after the AC power is applied to the antenna structure, the voltage at the other end of the first antenna segment relative to the reference node and the voltage at the other end of the second antenna segment relative to the reference node may correspond to each other.
[0050] The antenna structure may be configured in at least one of a flat plate shape that guides plasma to the top or bottom, and a tube shape that guides plasma to the center.
[0051] According to yet another aspect of the present specification, there can be provided a plasma generation device that applies an AC power source to induce plasma in a chamber, the plasma generation device comprising a first antenna structure arranged to have a first radius of curvature based on an imaginary central axis, the first antenna structure including a plurality of first antenna segments having the first radius of curvature and at least one first capacitive load arranged between the plurality of first antenna segments so that the plurality of first antenna segments are electrically connected in series, the plurality of first antenna segments at least partially overlapping with an imaginary first plane that is perpendicular to the central axis, each of the plurality of first antenna segments having a first length, and the total length of the plurality of first antenna segments being shorter than the circumference of a circle whose radius is the first radius of curvature.
[0052] Here, the plasma generating device may include a second antenna structure arranged on the first plane so as to have a second radius of curvature greater than the first radius of curvature based on the central axis, and the second antenna structure may include a plurality of second antenna segments having the second radius of curvature and at least one second capacitive load arranged between the plurality of second antenna segments so that the plurality of second antenna segments are electrically connected in series, and each of the plurality of second antenna segments may have a first length, and the total length of the plurality of second antenna segments may be shorter than the circumference of a circle whose radius is the second radius of curvature.
[0053] Meanwhile, the first to eighth antenna segments described above may be interpreted as referring to any one of the antenna segments within the antenna structure, regardless of the order. For example, the first antenna segment and the second antenna segment may refer to antenna segments arranged on the same plane.
[0054] Furthermore, the series connection described above does not only refer to a case where elements are directly connected to each other, but also includes a case where elements are indirectly connected by including another element between them.
[0055] According to yet another aspect of the present specification, an antenna structure that is disposed outside a plasma generation unit and provides an induced electric field to induce plasma inside the plasma generation unit includes a first antenna formed along an outer wall surface of the plasma generation unit and inducing an electric field, wherein a first cooling water flow path for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generation unit and is in surface contact with the plasma generation unit via the first inner diameter surface, the first antenna includes a first surface that defines contact with the first cooling water flow path and is parallel to the outer wall of the plasma generation unit and the first inner diameter surface, and the antenna structure can provide an antenna structure that absorbs heat from the plasma generation unit via the inner diameter surface and the first surface to prevent the temperature of the plasma generation unit from rising due to the plasma.
[0056] Here, the first turn antenna may include a first outer diameter surface connected to the first inner diameter surface, and the first outer diameter surface may be bent in a direction away from the plasma generating unit along a vertical direction.
[0057] Further, here, the device may include a second antenna electrically connected to the first antenna and arranged to enclose the first antenna, and a third antenna electrically connected to the second antenna and arranged to enclose the second antenna, and the second antenna and the third antenna may be arranged so that the distance between the first antenna and the second antenna is longer than the distance between the second antenna and the third antenna.
[0058] Further, here, a second antenna is provided which is electrically connected to the first antenna, is arranged to enclose the first antenna, and is composed of at least a second inner diameter surface and a second outer diameter surface, the second inner diameter surface is arranged closer to the plasma generation portion than the second outer diameter surface, and the second inner diameter surface of the second antenna may not be parallel to the first inner diameter surface of the first antenna.
[0059] Further, here, a second antenna may be provided which is electrically connected to the first antenna, is arranged on the same plane as the first antenna so as to enclose the first antenna, and is composed of at least a second inner diameter surface and a second outer diameter surface, the second inner diameter surface is arranged closer to the plasma generation unit than the second outer diameter surface, and the distance between the second inner diameter surface and the first outer diameter surface may increase as it moves away from the plane in the longitudinal direction of the plasma generation unit.
[0060] Also, here, a second antenna may be provided that is electrically connected to the first antenna and is arranged to surround the first antenna, and the cross section of the second antenna may be different from the cross section of the first antenna.
[0061] Further, here, the device may include a second antenna electrically connected to the first antenna and arranged to encase the first antenna, and a connection portion connecting the first antenna and the second antenna, wherein the first antenna and the second antenna have different cross sections, and the cross section of one end of the connection portion corresponds to the cross section of the first antenna, and the cross section of the other end of the connection portion corresponds to the cross section of the second antenna.
[0062] Here, the connection portion may include at least a part of the end of the first antenna and at least a part of the expanded end of the second antenna.
[0063] Here, the connection portion may include a capacitive element.
[0064] The antenna may further include a clamping portion coupled to the first antenna to provide a clamping force to the first antenna.
[0065] According to another embodiment of the present specification, there can be provided a plasma generation device comprising: a plasma generation unit including an internal space in which plasma is induced; and an antenna structure disposed outside the plasma generation unit and providing an induced electric field to induce plasma in the internal space of the plasma generation unit, wherein the antenna structure includes a first antenna formed along an outer wall surface of the plasma generation unit to induce the electric field, a first cooling water flow path for moving cooling water is formed inside the first antenna, the first antenna includes a first inner diameter surface parallel to the outer wall of the plasma generation unit and is in surface contact with the plasma generation unit via the first inner diameter surface, the first antenna includes a first surface that defines the first cooling water flow path and is parallel to the outer wall of the plasma generation unit and the first inner diameter surface, and the antenna structure absorbs heat from the plasma generation unit via the inner diameter surface and the first surface to prevent the temperature of the plasma generation unit from increasing due to the plasma.
[0066] Here, the thickness of the plasma generating part may be 0.5 mm or more and 30 mm or less.
[0067] The diameter of the plasma generating portion may be 10 mm or more and 300 mm or less.
[0068] In addition, here, the plasma generating device may further include a heat transfer member thermally coupled to the plasma generating unit and the antenna structure, respectively, the plasma generating unit and the antenna structure being arranged at a distance from each other, and the heat transfer member being arranged between the plasma generating unit and the antenna structure.
[0069] At least a part of the plasma generating section may be made of at least one material selected from the group consisting of aluminum oxide, silicon nitride, silicon nitride, silicon dioxide, yttrium oxide, ceramic, silicon carbide, and combinations thereof.
[0070] In addition, the inner surface of the plasma generating portion that defines the internal space may be made of silicon carbide.
[0071] The present specification relates to an antenna structure and a plasma generation device using the same.
[0072] Here, plasma can be induced or generated in various ways when a substance is separated into negatively charged electrons and positively charged ions by the application of high energy. Among them, inductively coupled plasma (ICP) is generated when an inductive electric field or a charged electric field is formed in a specific space by supplying power to a coil or an antenna, and can generally be driven by a high-frequency power source such as a radio frequency (RF). However, for the sake of convenience, the following description will be made on the assumption that the plasma generated by the plasma generator is inductively coupled plasma, but the technical concept of this specification is not limited thereto.
[0073] Here, an antenna is an inductive element or load that generates an electric field or magnetic field around it when a voltage or current is applied, and can refer to a coil or inductor, etc., or can also refer to an equivalent circuit realized with elements other than an inductive element.
[0074] Here, the term "antenna structure" can refer to a structure including at least one antenna, and can also include at least one capacitive element or load, and can be realized in a form in which at least one antenna or capacitive element is connected or arranged in a specific manner.
[0075] On the other hand, the plasma generating device according to one embodiment of this specification can be widely used in various fields such as semiconductors, display processing, environment, and energy, and it has been made clear in advance that the plasma generating device described below is not limited to use in a specific field, but can be commonly used in fields where plasma is utilized.
[0076] An inductively coupled plasma system (ICP system) 10 according to one embodiment of the present disclosure will now be described with reference to FIGS.
[0077] 1 is a diagram of a plasma system 10 according to one embodiment of the present disclosure. The plasma system 10 can induce the generation of inductively coupled plasma in a plasma generating section by supplying RF power to an antenna structure using an RF power source.
[0078] Referring to FIG. 1, a plasma system 10 may include a plasma generating device 100 including an antenna structure 1000 and a plasma generating section 2000 , and an RF power supply 200 .
[0079] The plasma generator 100 can generate plasma by receiving RF power from the RF power source 200. Specifically, when RF power is supplied to the antenna structure 1000, a time-varying current flows, and based on this, an induced electric field is generated in the plasma generator 2000, thereby inducing plasma.
[0080] The antenna structure 1000 can be electrically connected to the RF power source 200. For example, the antenna structure 1000 may be connected to the RF power source 200 in series or parallel with a conductor, or in series or parallel with the RF power source 200 with an electrical element.
[0081] The antenna structure 1000 may be physically or electrically connected to the plasma generating unit 2000. The connection between the antenna structure 1000 and the plasma generating unit 2000 will be described in detail later.
[0082] The plasma generating unit 2000 may include a region where plasma generation is induced. For example, the plasma generating unit 2000 may refer to a space where plasma can be generated and maintained, such as a chamber or a tube.
[0083] FIG. 2 is a diagram of an exemplary implementation of a plasma system 10 according to one embodiment of the present disclosure.
[0084] 2, the plasma system 10 can be implemented in various ways depending on the type of plasma to be used. Specifically, the relative positions of the RF power source 200, the antenna structure 1000, and the plasma generating unit 2000 can be set depending on the type of plasma to be used.
[0085] 2a, the plasma system 10 may generate plasma above or below the antenna structure 1000. For example, the antenna structure 1000 may be configured as a flat plate and disposed on the upper end of a plasma generating unit 2000, which may be provided in a chamber containing a process object such as a semiconductor wafer, a silicon substrate, or a display, and may perform a semiconductor process or a display process using a process gas flowing into the plasma generating unit 2000 and the induced plasma. As another example, the antenna structure 1000 may be configured as a flat plate and disposed on the lower end of the plasma generating unit 2000, which may be provided in a chamber containing a process object such as a semiconductor wafer, a silicon substrate, or a display, and may perform a semiconductor process or a display process using a process gas flowing into the plasma generating unit 2000 and the induced plasma.
[0086] 2b, the plasma system 10 can generate plasma at the center of the antenna structure 1000. For example, the antenna structure 1000 can be configured in a tubular shape and provided in a form that surrounds or wraps around the plasma generating unit 2000, and the plasma generating unit 2000 can be provided in a dielectric tube. Radicals can be generated using the process gas and plasma supplied to the plasma generating unit 2000 and provided to a separate process chamber.
[0087] On the other hand, the shape of the antenna structure 1000 is not limited to being flat or tubular as shown in Figure 2, and it goes without saying that the antenna structure 1000 may be configured in a tubular shape in Figure 2a and in a flat shape in Figure 2b.
[0088] The plasma generating unit 2000 that can be used in the plasma system 10 will be specifically described below with reference to FIG.
[0089] FIG. 3 is a diagram illustrating a plasma generating unit 2000 according to one embodiment of the present disclosure.
[0090] The plasma generating unit 2000 may be configured in various shapes. For example, referring to Fig. 3, the plasma generating unit 2000 may be configured in a shape including an internal space where plasma is induced. Specifically, the plasma generating unit 2000 may have a hollow cylindrical, ring-like, or tubular shape.
[0091] The plasma generating unit 2000 may have a specific thickness t. For example, referring to FIG. 3, when the plasma generating unit 2000 is configured in a tubular shape, the thickness t of the plasma generating unit 2000 may be determined to be within a range of 0.5 mm to 30 mm. If the thickness t of the plasma generating unit 2000 is less than 0.5 mm, by-products may be easily generated inside the plasma generating unit 2000 by the antenna structure 1000, which may weaken the physical durability. If the thickness t of the plasma generating unit 2000 is more than 30 mm, the inductive coupling between the antenna structure 1000 disposed around the plasma generating unit 2000 and the plasma induced inside the plasma generating unit 2000 may be weakened, making it difficult to induce or maintain the plasma, and the cooling efficiency of the plasma generating unit 2000 by the antenna structure 1000 (described later) may be reduced. Therefore, the above-mentioned range of the thickness t of the plasma generating unit 2000 can be critical in that when the antenna structure 1000 is electrically connected to the plasma generating unit 2000 as described below, it can stably induce and maintain plasma inside the plasma generating unit 2000 and improve the durability of the plasma generating unit 2000.
[0092] The plasma generating unit 2000 may have a specific diameter d. For example, referring to FIG. 3, if the plasma generating unit 2000 has a tubular shape, the diameter d may be determined within a range of 10 mm to 300 mm. Here, the diameter d may refer to the diameter of the inner surface of the plasma generating unit 2000, the diameter of the outer surface, or the average diameter of the inner and outer surfaces. If the diameter d of the plasma generating unit 2000 is less than 10 mm, the plasma induced inside the plasma generating unit 2000 may have a relatively large surface area compared to its volume, resulting in energy loss. Also, if the diameter d of the plasma generating unit 2000 exceeds 300 mm, the induced power density required for plasma induction may be very low, making it difficult to fabricate the antenna structure 1000 or RF power source 200. Therefore, the above-mentioned range of the diameter d of the plasma generating unit 2000 may be critical in that it facilitates fabrication of the RF power source 200 and antenna structure 1000 of the plasma system 10 and improves plasma induction efficiency by preventing plasma energy loss.
[0093] The above description has been given mainly on the case where the shape of the plasma generating unit 2000 is a hollow cylinder or tube, but the technical idea of this specification is not limited to this. For example, the plasma generating unit 2000 may have a polygonal shape including an internal space in which plasma can be guided, and it goes without saying that the above-mentioned contents regarding the thickness t and diameter d can also be applied in this case.
[0094] The plasma generating unit 2000 can be made of various materials. For example, the plasma generating unit 2000 can be made of a non-conductive material. As another example, the plasma generating unit 2000 can be made of a material with high thermal conductivity. Specifically, the plasma generating unit 2000 can be made of aluminum nitride (AlN), aluminum oxide (Al2O3), silicon nitride (SiN), silicon nitride (Si3N4), silicon dioxide (SiO2), yttrium oxide (YO3), or silicon carbide (SiC).
[0095] Furthermore, the plasma generating unit 2000 may be made of a material that does not generate particles by reacting with gases (e.g., NF, Ar, CO, CH, NF, O, H, etc.) flowing into the plasma generating unit 2000 for plasma induction. For example, the plasma generating unit 2000 may be made of silicon carbide (SiC).
[0096] The RF power supply will be specifically described below with reference to FIG.
[0097] FIG. 4 is a diagram of an RF power supply 200 according to one embodiment of the present disclosure.
[0098] 4, the RF power supply 200 may include an AC power supply 210, a rectifier 220, an inverter 230, a controller 240, and a sensor module 250. The RF power supply 200 may convert a first AC power supplied from the AC power supply 210 into a second AC power supply and supply the second AC power supply to a load. For example, the RF power supply 200 may convert the first AC power supply used in general households or industries into a second AC power supply having a frequency of several hundred kHz to several tens of MHz and a power of several kW or more and provide the second AC power supply to the antenna structure 1000.
[0099] Here, the load may include the antenna structure 1000 and the plasma generated by the antenna structure 1000 .
[0100] The rectifier 220 can convert the output of the AC power source 210 into DC power. For example, the rectifier 220 can convert the first AC power source supplied from the AC power source 210 into DC power source and apply it to both ends of the inverter 230.
[0101] The inverter 230 receives DC power from the rectifier 220 and can supply second AC power to a load. In this case, the inverter 230 can provide the second AC power to the load using a switching signal received from the controller 240. Here, the inverter 230 can include at least one switch element controlled by the switching signal, and the second AC power supplied from the inverter 230 to the load can have a driving frequency set based on the switching signal provided to the inverter 230 by the controller 240. To this end, the inverter 230 can be provided as a half-bridge type or a full-bridge type controlled by a pulse width modulation (PWM) method.
[0102] Alternatively, a capacitive element may be disposed between the rectifier 220 and the inverter 230. For example, the RF power supply 200 includes a capacitor connected in parallel with the rectifier 220 and the inverter 230, and the capacitor can discharge the AC component of the power applied to the inverter 230 to a ground node (GND).
[0103] The controller 240 can generate a switching signal by receiving sensing data from the sensor module 250. For example, the controller 240 can include an FPGA and obtain data related to the resonant frequency of the load from the sensor module 250 to generate a switching signal.
[0104] The sensor module 250 can cause the controller 240 to obtain data related to the resonant frequency of the load or data related to the power supplied to the load. To this end, the sensor module 250 can sense the magnitude and phase of the current flowing through the load or the inverter 230, the magnitude and phase of the applied voltage, the magnitude of the relative potential or power, etc.
[0105] As described above, the RF power supply 200 can control the driving frequency of the second AC power supply provided to the load based on data related to the resonant frequency of the load. In other words, the RF power supply 200 can track the resonant frequency of the load, which changes in response to plasma generation, and set the driving frequency of the second AC power supply to be the same as the resonant frequency of the load. This can prevent unnecessary power consumption and improve the durability of the plasma system.
[0106] The configuration and arrangement of the antenna structure 1000 will be described below with reference to FIGS.
[0107] 5 and 6 are diagrams illustrating how antenna segments are arranged according to one embodiment of the present disclosure.
[0108] 5, the antenna structure 1000 may include multiple antenna segments. The antenna structure 1000 may be configured with multiple antenna segments depending on the intensity, density, or generation range of the plasma required in the plasma application field. For example, the antenna structure 1000 may be arranged over a wide area to generate plasma over a wide range. In this case, the antenna structure 1000 may be divided into multiple antenna segments to prevent the length of the antenna structure 1000 from becoming excessively long and increasing the electric potential at the antenna structure 1000.
[0109] In the following, for the sake of convenience, the antenna segments are described as including first to fourth antenna segments 1110, 1120, 1130, and 1140, but the antenna structure 1000 can include m antenna segments (m is a natural number), and the following description can be applied commonly to each case.
[0110] The antenna segment may be provided as a portion of an antenna, an induction coil, or an inductor, a copper conductor, etc. The physical properties of the antenna segment, such as cross-sectional shape, cross-sectional area, thickness, and width, may be determined based on the electrical properties required for the antenna structure 1000 or the antenna segment, such as inductance, mutual inductance, parasitic inductance, capacitance, parasitic capacitance, resistance, or parasitic resistance.
[0111] Furthermore, for the sake of convenience in the following explanation, the antenna segment will be described as having an arc shape, but the technical idea of this specification is not limited to this. In addition to an arc shape, the antenna segment can have specific geometric shapes such as a straight line, curve, broken line, broken curve, circle or polygon, donut, solenoid, etc., and while it is generally configured in a three-dimensional shape, it goes without saying that it may also be configured in a two-dimensional shape such as a thin film or plating.
[0112] The antenna segments may be disposed on a first plane P1 at a predetermined distance from the central axis CA. Specifically, the antenna segments may be disposed on the first plane P1 and spaced a predetermined distance from the central axis CA.
[0113] Here, the central axis CA may refer to an imaginary axis. For example, the central axis CA may be understood as an imaginary line passing through the center of the plasma generated in the plasma system 10.
[0114] Here, the first plane P1 may refer to an imaginary plane on which the antenna segments are arranged. For example, the first plane P1 may refer to an imaginary plane perpendicular to the central axis CA. In yet another example, the first plane P1 may refer to an imaginary plane intersecting the central axis CA. Alternatively, all of the antenna segments may be arranged on the first plane P1, or at least some of the antenna segments may be arranged on the first plane P1 and other parts may be arranged on a plane different from the first plane P1.
[0115] The antenna segments can have a specific curvature or a specific radius of curvature. For example, the first through fourth antenna segments 1110, 1120, 1130, and 1140 can be configured as an arc having a first radius of curvature RC1. In yet another example, the first through fourth antenna segments 1110, 1120, 1130, and 1140 can have corresponding curvatures or radii of curvature. In yet another example, the first through fourth antenna segments 1110, 1120, 1130, and 1140 can have different curvatures or radii of curvature.
[0116] Here, the radius of curvature or the curvature may be set based on the size of the antenna structure 1000. For example, the larger the size or volume of the antenna structure 1000, the larger the radius of curvature and the smaller the curvature.
[0117] The antenna segments may extend to a specific length. For example, the first through fourth antenna segments 1110, 1120, 1130, and 1140 may extend to corresponding lengths or may be arranged to extend to different lengths. Specifically, the first through fourth antenna segments 1110, 1120, 1130, and 1140 may have the same first length or different lengths.
[0118] The total length of the antenna segments may be set to a predetermined value or less. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged on a first plane P1 with a first radius of curvature RC1 based on a central axis CA and extend a first length, the total length of the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be shorter than the length of a circle whose radius is the first radius of curvature RC1. In yet another example, when the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged so that at least a portion has a first radius of curvature RC1 and extends a first length relative to the central axis CA on the first plane P1, and the other portion has a second radius of curvature RC2 and extends a second length, the total length of the first to fourth antenna segments 1110, 1120, 1130, and 1140 may be less than the length of the circumference of a circle having a radius equal to the first radius of curvature RC1 or the second radius of curvature RC2. In this case, the first to fourth antenna segments 1110, 1120, 1130, and 1140 can be arranged so as not to physically contact one another.
[0119] Meanwhile, an electric element may be disposed between the antenna segments. For example, a capacitive element may be disposed between the antenna segments, and the capacitive element may electrically connect the antenna segments. The arrangement of the electric element will be described in detail later.
[0120] The antenna segments included in the antenna structure 1000 may be arranged in multiple turns. Referring to Figure 6, the antenna segments may be arranged in two turns on a first plane P1 based on a central axis CA. Specifically, the first turn may include first to fourth antenna segments 1110, 1120, 1130, and 1140, and the second turn may include fifth to eighth antenna segments 1210, 1220, 1230, and 1240. Here, the antenna segments of the first turn may have a first radius of curvature RC1, and the antenna segments of the second turn may have a second radius of curvature RC2 that is larger than the first radius of curvature RC1.
[0121] The antenna segments of the second turn may be arranged to correspond to the antenna segments of the first turn. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first to fourth quadrants of the first plane P1, respectively, the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 can be arranged in the first to fourth quadrants of the first plane P1, respectively.
[0122] Here, the first antenna segment 1110 may be adjacent to the second antenna segment 1120 and the fourth antenna segment 1140 in the arc direction and adjacent to the fifth antenna segment 1210 in the direction perpendicular to the central axis CA. The second antenna segment 1120 may be adjacent to the first antenna segment 1110 and the third antenna segment 1130 in the arc direction and adjacent to the sixth antenna segment 1220 in the direction perpendicular to the central axis CA. The third antenna segment 1130 may be adjacent to the second antenna segment 1120 and the fourth antenna segment 1140 in the arc direction and adjacent to the seventh antenna segment 1230 in the direction perpendicular to the central axis CA. The fourth antenna segment 1140 may be adjacent to the first antenna segment 1110 and the third antenna segment 1130 in the arc direction and adjacent to the eighth antenna segment 1240 in the direction perpendicular to the central axis CA.
[0123] The second-turn antenna segment can extend a longer length than the first-turn antenna segment. For example, if the first antenna segment 1110 is disposed extending a first length, the fifth antenna segment 1210 can extend a second length longer than the first length. Here, the ratio of the second length to the first length can correspond to the ratio of the second radius of curvature RC2 of the fifth antenna segment 1110 to the first radius of curvature RC1 of the first antenna segment 1110. Also, here, the central angle formed by the first antenna segment 1110 extending the corresponding first length with the central axis CA can correspond to the central angle formed by the fifth antenna segment 1210 extending the second length with the central axis CA. Alternatively, the central angle of a sector formed by the first antenna segment 1110 extending the first length can correspond to the magnitude of the central angle of a sector formed by the fifth antenna segment 1210 extending the second length. Alternatively, an extension line connecting one end of the first antenna segment 1110 and one end of the fifth antenna segment 1210 may coincide with the central axis CA.
[0124] Here, the central angle may be set according to the number of antenna segments arranged per turn. For example, if there are x antenna segments arranged per turn (x is a natural number), the central angle formed by each antenna segment with the central axis CA may be approximately 360 / x° or less. Specifically, referring again to FIG. 5, the antenna segments include first antenna segment 1110 to fourth antenna segment 1140, and in this case, the central angle formed by each antenna segment with the central axis CA may be less than or equal to approximately 90°.
[0125] The distance between the first and second turns may be set based on the electrical properties of the antenna structure 1000. As an example, the distance between the first and second turns may be set based on parasitic capacitance that may occur between the antenna segments. For example, the distance between the first and second turns may be set to a distance that minimizes the effect of parasitic capacitance between the first antenna segment 1110 and the fifth antenna segment 1210 when power is applied to the antenna structure 1000. As another example, the distance between the first and second turns may be set in consideration of the overall volume of the antenna structure 1000. For example, to reduce the width of the antenna structure 1000 within manufacturing tolerances, the distance between the first and second turns may be set to approximately 1 mm or within a range of 0.5 mm to 3.5 mm. In this case, the distance between the first and second turns may be set to a distance that prevents arcing between the turns when the plasma system 10 is operated at a specific drive frequency. In yet another example, the distance between the first turn and the second turn may be set taking into account the flexibility of the plasma generation section 2000. It goes without saying that the method for setting the distance between the first turn and the second turn described above can also be used to set the distance between turns in the antenna structure 1000, such as the distance between the second turn and the third turn.
[0126] The inductance of the antenna segment of the second turn may be set based on the inductance of the antenna segment of the first turn. For example, the inductance of the fifth antenna segment 1210 may correspond to the inductance of the first antenna segment 1110. In yet another example, the inductance of the fifth antenna segment 1210 may be set to be greater than the inductance of the first antenna segment 1110.
[0127] Alternatively, the antenna segments of the first and second turns may be arranged in different planes. For example, the antenna segment of the first turn may be arranged in a first plane P1, and the antenna segment of the second turn may be arranged in a plane parallel to the first plane P1 or at a predetermined angle to the first plane P1.
[0128] The first turn and the second turn may include the same number of antenna segments or different numbers of antenna segments. For example, the first turn may include four antenna segments 1110, 1120, 1130, and 1140, and the second turn may include only the fifth antenna segment 1210 and the seventh antenna segment 1230, which are arranged symmetrically with respect to the central axis CP.
[0129] For convenience of explanation, the above description is based on the antenna structure 1000 being configured with two turns. However, the technical concept of this specification is not limited to this. The antenna structure 1000 may be configured with n turns (n is a natural number), and further, the antenna structure 1000 may include n turns, each of which includes m antenna segments. In this way, the antenna segment arrangement method described above can be similarly applied to a multi-segment, multi-turn antenna structure 1000. For example, if the antenna structure 1000 is configured with three turns, each of which includes six antenna segments, the first turn may include six antenna segments having a first radius of curvature RC1 and a first length, the second turn may include six antenna segments having a second radius of curvature RC2 and a second length, and the third turn may include six antenna segments having a third radius of curvature and a third length. The total length of the antenna segments in each turn may be shorter than the circumference of a circle whose radius is the radius of curvature of the antenna segments in each turn.
[0130] A method for connecting the antenna segments in the antenna structure 1000 will be described below with reference to FIGS.
[0131] 7-10 are diagrams of an antenna structure 1000 including antenna segments and capacitive elements according to one embodiment of the present disclosure.
[0132] 7, the antenna structure 1000 is configured in a flat plate shape and can include antenna segments, a first main capacitive element 1500, a second main capacitive element 1600, and an auxiliary capacitive element. The antenna structure 1000 can electrically or physically connect multiple antenna segments by including the auxiliary capacitive element, and can be connected to an RF power source 200 via the first main capacitive element 1500 and the second main capacitive element 1600.
[0133] Here, the auxiliary capacitive elements can include first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, 1723 that electrically or physically connect antenna segments within a turn, and a first inter-turn capacitive element 1731 that electrically or physically connects different turns.
[0134] Here, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements are elements represented as capacitors or equivalent circuits of capacitors, and may refer to elements having a predetermined capacitance or capacitive reactance. For example, the main capacitive elements 1500, 1600 and the auxiliary capacitive elements may include a ceramic capacitor with good high-frequency characteristics, a multi-layer ceramic capacitor (MLCC) in which multiple capacitors are connected in series and / or parallel, or a capacitor array.
[0135] The auxiliary capacitive element may electrically or physically connect multiple antenna segments. For example, referring again to FIG. 7, one end of a first auxiliary capacitive element 1711 may be connected to one end of a first antenna segment 1110, and the other end of the first auxiliary capacitive element 1711 may be connected to one end of a second antenna segment 1120. The first antenna segment 1110 may extend a first length from one end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1, and the second antenna segment 1120 may extend a first length from the other end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1.
[0136] In another example, the first antenna segment 1110 may extend a first length from one end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1, and the second antenna segment 1120 may extend a first length from the other end of the first auxiliary capacitive element 1711 with a second radius of curvature RC2, where the first radius of curvature RC1 and the second radius of curvature RC2 may be the same or different.
[0137] In yet another example, the first antenna segment 1110 may extend a first length from one end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1, and the second antenna segment 1120 may extend a second length from the other end of the first auxiliary capacitive element 1711 with a first radius of curvature RC1, where the first length and the second length may be the same or different.
[0138] Auxiliary capacitive elements may be disposed between the antenna segments. For example, referring again to FIG. 7, first to third auxiliary capacitive elements 1711, 1712, and 1713 may be disposed between the first to fourth antenna segments 1110, 1120, 1130, and 1140 in the first turn of the antenna structure 1000. The first auxiliary capacitive element 1711 may be disposed between the first antenna segment 1110 and the second antenna segment 1120. The second auxiliary capacitive element 1712 may be disposed between the second antenna segment 1120 and the third antenna segment 1130. The third auxiliary capacitive element 1713 may be disposed between the third antenna segment 1130 and the fourth antenna segment 1140. The fourth to sixth auxiliary capacitive elements 1721, 1722, and 1723 may be disposed between the fifth to eighth antenna segments 1210, 1220, 1230, and 1240 in the second turn of the antenna structure 1000. The fourth auxiliary capacitive element 1721 can be disposed between the fifth antenna segment 1210 and the sixth antenna segment 1220. The fifth auxiliary capacitive element 1722 can be disposed between the sixth antenna segment 1220 and the seventh antenna segment 1230. The sixth auxiliary capacitive element 1723 can be disposed between the seventh antenna segment 1230 and the eighth antenna segment 1240.
[0139] Here, the first auxiliary capacitive element 1711 may be arranged adjacent to the second auxiliary capacitive element 1712 in the arc direction and adjacent to the fourth auxiliary capacitive element 1721 in the direction perpendicular to the central axis CA. The second auxiliary capacitive element 1712 may be arranged adjacent to the first auxiliary capacitive element 1711 and the third auxiliary capacitive element 1713 in the arc direction and adjacent to the fifth auxiliary capacitive element 1722 in the direction perpendicular to the central axis CA. The third auxiliary capacitive element 1713 may be arranged adjacent to the second auxiliary capacitive element 1712 in the arc direction and adjacent to the sixth auxiliary capacitive element 1723 in the direction perpendicular to the central axis CA.
[0140] The auxiliary capacitive element may be arranged to have a specific positional relationship with the antenna segments. For example, the first auxiliary capacitive element 1711 may be arranged to pass through an imaginary line connecting the other end of the first antenna segment 1110 and one end of the second antenna segment 1120. In yet another example, the first auxiliary capacitive element 1711 may be connected to the first antenna segment 1110 and the second antenna segment 1120 via an electrical connection member such as a conductor, but may be arranged further away from the central axis CA than the connected antenna segments. In yet another example, the first auxiliary capacitive element 1711 may be arranged between the first turn and the second turn. Specifically, the first auxiliary capacitive element 1711 may be arranged at a distance from the central axis CA that is greater than the first radius of curvature RC1 and less than the second radius of curvature RC2.
[0141] Alternatively, the auxiliary capacitive elements may be arranged on a plane different from the plane on which the antenna segments are arranged. For example, at least one of the first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 may be arranged at a predetermined distance from the first plane P1. Here, the predetermined distance may take into consideration the volume or size of the auxiliary capacitive element.
[0142] The auxiliary capacitive elements may be arranged to have a predetermined positional relationship between them between the antenna segments. For example, referring again to FIG. 7, at least two of the first to sixth auxiliary capacitive elements 1711, 1712, 1713, 1721, 1722, and 1723 may be arranged symmetrically with respect to the central axis CA. Specifically, the first auxiliary capacitive element 1711 and the third auxiliary capacitive element 1713 may be arranged symmetrically with respect to the central axis CA. In yet another example, the first-turn auxiliary capacitive element and the second-turn auxiliary capacitive element may be arranged at positions corresponding to each other. Specifically, an extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 may coincide with the central axis CA. Alternatively, an extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 may pass through the third auxiliary capacitive element 1713 and the sixth auxiliary capacitive element 1723. Alternatively, the extension line connecting the first auxiliary capacitive element 1711 and the fourth auxiliary capacitive element 1721 and the extension line connecting the second auxiliary capacitive element 1712 and the fifth auxiliary capacitive element 1722 may be at an intersecting or twisted position within a predetermined range from the central axis CA.
[0143] In the same manner as described above, the first to fourth antenna segments 1110, 1120, 1130, and 1140 can be electrically connected via the first to third auxiliary capacitive elements 1711, 1712, and 1713. The fifth to eighth antenna segments 1210, 1220, 1230, and 1240 can be electrically connected via the fourth to sixth auxiliary capacitive elements 1721, 1722, and 1723.
[0144] The number of auxiliary capacitive elements may be set based on the number of layers, turns, and antenna segments of the antenna structure 1000. For example, referring again to Figure 7, if the antenna structure 1000 is composed of one layer including two turns with four antenna segments each, the antenna structure 1000 may include seven auxiliary capacitive elements.
[0145] However, each of the turns constituting the antenna structure 1000 may include a different number of antenna segments. For example, referring to Figure 8, the antenna structure 1000 may include a first turn including first to fourth antenna segments 1110, 1120, 1130, and 1140, and a second turn including fifth to tenth antenna segments 1210, 1220, 1230, 1240, 1250, and 1260.
[0146] Here, each antenna segment in the antenna structure 1000 can have substantially the same length or different lengths. For example, the antenna segment of the first turn and the antenna segment of the second turn can both have the same length. In yet another example, each antenna segment of the first turn can have a first length, and each antenna segment of the second turn can have a second length that is shorter than the first length. In this case, the first length and the second length can be set based on the radius of curvature of each turn. In this case, the antenna segments constituting each turn of the antenna structure 1000 do not necessarily need to extend to the same length.
[0147] On the other hand, if the multiple turns making up the antenna structure 1000 each include a different number of antenna segments, each turn within the antenna structure 1000 may include a different number of auxiliary capacitive elements. As an example, referring again to Figure 8, the first turn of the antenna structure 1000 may include first through third auxiliary capacitive elements 1711, 1712, and 1713, and the second turn may include fourth through eighth auxiliary capacitive elements 1721, 1722, 1723, 1724, and 1725.
[0148] Here, the auxiliary capacitive elements included in the first turn and the auxiliary capacitive elements included in the second turn of the antenna structure 1000 may have a predetermined positional relationship. Specifically, at least one of the auxiliary capacitive elements included in the first turn and at least one of the auxiliary capacitive elements included in the second turn may be positioned on a straight line. For example, referring again to FIG. 8 , the second auxiliary capacitive element 1712 of the first turn of the antenna structure 1000 and the sixth auxiliary capacitive element 1723 of the second turn of the antenna structure 1000 may be positioned within a predetermined area from a line perpendicular to the central axis CA and passing through the center of the antenna structure 100. However, the positional relationship between the auxiliary capacitive elements within the antenna structure 1000 is not limited to the above-described case, and the auxiliary capacitive elements within the antenna structure 1000 may be positioned arbitrarily without any specific positional relationship between them.
[0149] The layers constituting the antenna structure 1000 may each include a different number of antenna segments and a different number of auxiliary capacitive elements. The number of antenna segments and auxiliary capacitive elements included in different layers can be set in a similar manner to the method for setting the number of antenna segments and auxiliary capacitive elements included in different turns described above.
[0150] Auxiliary capacitive elements may be disposed between turns to electrically or physically connect the antenna segments. For example, referring again to FIG. 7, the auxiliary capacitive element may be disposed between the first and second turns to electrically connect the first and second turns. Specifically, the first inter-turn capacitive element 1731 may connect the fourth antenna segment 1140, which constitutes the first turn, and the fifth antenna segment 1210, which constitutes the second turn, in series. In this case, the first inter-turn capacitive element 1731 may be connected to the antenna segments directly or via a separate connection such as a conductor. As a result, the antenna segment connected to the first inter-turn capacitive element 1731 may have a length shorter or longer than the other antenna segments. Although not shown, the first inter-turn capacitive element 1731 may also connect the first antenna segment 1110, which constitutes the first turn, and the eighth antenna segment 1240, which constitutes the second turn, in series. At this time, the antenna structure 1000 can be wound from the inner turn to the outer turn in a counterclockwise direction based on the direction of looking from the first plane P1 to the second plane P2.
[0151] Here, the inter-turn capacitive element may have a different shape from the other auxiliary capacitive elements or may have a separate connection portion for connecting the turns. For example, one end and the other end of the first inter-turn capacitive element 1731 may be spaced at different distances from the central axis CA. Specifically, one end of the first inter-turn capacitive element 1731 connected to the fourth antenna segment 1140 of the first turn may be spaced at a shorter distance from the central axis CA than the other end of the first inter-turn capacitive element 1731 connected to the fifth antenna segment 1210 of the second turn. In yet another example, the first inter-turn capacitive element 1731 may include a first connection portion extending from one end of the first inter-turn capacitive element 1731 to the fourth antenna segment 1140 and a second connection portion extending from the other end of the first inter-turn capacitive element 1731 to the fifth antenna segment 1210. In this case, the first connection portion and the second connection portion may comprise straight or curved conductors and may be spaced at different distances from the central axis CA.
[0152] The inclusion of inter-turn capacitive elements in the antenna structure 1000 allows all of the antenna segments within the antenna structure 1000 to be electrically connected.
[0153] The primary capacitive elements 1500, 1600 may physically or electrically connect the antenna segments to the RF power source 200. For example, referring again to Figure 7, the first primary capacitive element 1500 may electrically connect the first antenna segment 1110 and a first terminal of the inverter 230, and the second primary capacitive element 1600 may electrically connect the eighth antenna segment 1240 and a second terminal of the inverter 230.
[0154] Alternatively, different from what is shown in FIG. 7, the first main capacitive element 1500 can electrically connect the fourth antenna segment 1140 and the first terminal of the inverter 230, and the second main capacitive element 1600 can electrically connect the fifth antenna segment 1240 and the second terminal of the inverter 230.
[0155] On the other hand, when the antenna structure 1000 is realized with a first turn including first to fourth antenna segments 1110, 1120, 1130, and 1140, either the first antenna segment 1110 or the fourth antenna segment 1140 can be electrically connected to a first terminal of the inverter 230 via a first main capacitive element 1500, and the other can be electrically connected to a second terminal of the inverter 230 via a second main capacitive element 1600.
[0156] The primary capacitive elements 1500, 1600 may have a specific shape or a separate connection for connecting the RF power source 200 and the antenna structure 1000. For example, the first primary capacitive element 1500 may extend in a direction parallel to the central axis CA at one end of the first antenna segment 1110. Alternatively, the first primary capacitive element 1500 may extend in a direction away from the central axis CA at one end of the first antenna segment 1110. Alternatively, the first primary capacitive element 1500 may be positioned such that at least a portion of the first primary capacitive element 1500 overlaps with the first inter-turn capacitive element 1731 and at least a portion of the antenna segment when viewed in a direction perpendicular to the first plane P1. The second primary capacitive element 1600 may extend in a direction parallel to the first plane P1 at the other end of the eighth antenna segment 1240. Alternatively, the second primary capacitive element 1600 may extend in a direction parallel to the central axis CA at the other end of the eighth antenna segment 1240.
[0157] Alternatively, at least one of the first and second primary capacitive elements 1500 and 1600 may be omitted from the antenna structure 1000. In this case, the RF power source 200 may provide electrical elements corresponding to the primary capacitive elements 1500 and 1600. Also, at least some of the auxiliary capacitive elements may be omitted.
[0158] Furthermore, the primary capacitive elements 1500 and 1600 and the auxiliary capacitive elements may be disposed at a certain distance from the antenna segment. For example, if the auxiliary capacitive element is large in size or volume, it may be connected to the antenna segment via a separate connection part such as a conductor or a lead wire at a certain distance from the antenna segment.
[0159] The manner in which the primary capacitive elements 1500, 1600 and auxiliary capacitive elements are connected to the antenna segments can determine the direction in which current flows through the antenna structure 1000. For example, referring again to Figure 7, if the first primary capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, and the second primary capacitive element 1600 is connected in series with the eighth antenna segment 1240, when power is applied to the antenna structure 1000, current may flow in the same direction (clockwise or counterclockwise) through the first and second turns. 6, in a case where the first main capacitive element 1500 is connected in series with the fourth antenna segment 1140, the first antenna segment 1110 and the eighth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, and the second main capacitive element 1600 is connected in series with the fifth antenna segment 1210, when power is applied to the antenna structure 1000, current may flow in the same direction (clockwise or counterclockwise) through the first and second turns. In this case, when current flows in the same direction through the first and second turns, the strength of the induced electric field for plasma generation may be increased compared to when current flows in different directions through the first and second turns, and the potential difference between the antenna segments may be reduced, thereby reducing the effect of parasitic capacitance.
[0160] The antenna structure 1000 can generate plasma when an AC signal having a variable driving frequency is applied from an RF power source 200 via the main capacitive elements 1500, 1600.
[0161] Here, the driving frequency of the AC signal applied to the antenna structure 1000 can be time-varying based on the resonant frequency of the load including the antenna structure 1000 and the plasma.
[0162] The auxiliary capacitive element may have a predetermined capacitance. For example, the capacitance of the auxiliary capacitive element may be set based on at least one of the driving frequency range of the RF power source 200, the resonant frequency of the antenna structure 1000, the number of antenna segments, and the inductance of the antenna segments. Specifically, when the antenna structure 1000 has a resonant frequency f_r and the total inductance of the antenna inductances in the antenna structure 1000 is L_tot, the capacitance of the auxiliary capacitive element may be set so that the total capacitance C_tot of the primary capacitive elements 1500, 1600 and the auxiliary capacitive element connected to the antenna segments satisfies the following equation (1):
[0163] JPEG2025114669000002.jpg21170
[0164] In this case, when the capacitance resulting from the series connection of the first main capacitive element 1500 and the second main capacitive element 1600 is equivalent to one auxiliary capacitive element, the capacitance C_a of each auxiliary capacitive element can be set to a value obtained by multiplying C_tot, which satisfies the above formula (1), by the number of antenna segments included in the antenna structure 1000. Alternatively, when the resonant frequency of the antenna structure 1000 is set to f_r and the inductance of each antenna segment is L_a, the capacitance C_a of each auxiliary capacitive element may be set to satisfy the following formula (2):
[0165] JPEG2025114669000003.jpg19170
[0166] Specifically, if each antenna segment in the antenna structure 1000 has an inductance of approximately 1 μH and the resonant frequency of the antenna structure 1000 is specified to be 5.03 MHz, the capacitance of each auxiliary capacitive element can be set to approximately 1 nF. Alternatively, if each antenna segment in the antenna structure 1000 has an inductance of approximately 0.7 μH and the capacitance of each auxiliary capacitive element is set to approximately 3.32 nF, the antenna structure 1000 can be driven at a driving frequency of approximately 3.3 MHz to satisfy the resonance condition.
[0167] When the capacitance of the auxiliary capacitive element is set to satisfy the above-mentioned conditions, each antenna segment of the antenna structure 1000 has a certain range of potential values, thereby reducing the potential difference between the antenna segments. This reduces the electrostatic field due to capacitive coupling, reduces the power consumption of the antenna structure 1000, and improves the durability and plasma safety of the plasma system 10. Since the auxiliary capacitive element is disposed between the antenna segments in the antenna structure 1000, the potential of each antenna segment will be described later.
[0168] The main capacitive elements 1500, 1600 may have a predetermined electric capacitance or capacitance. For example, the capacitance of the main capacitive elements 1500, 1600 may be set based on at least one of the driving frequency range of the RF power source 200, the resonant frequency that the antenna structure 1000 should have, the number of antenna segments, the inductance of the antenna segments, and the capacitance of each of the auxiliary capacitive elements. Specifically, when the capacitance of the first main capacitive element 1500 is C1, the capacitance of the second main capacitive element 1600 is C2, and the capacitance of each of the auxiliary capacitive elements is C_a, C1 and C2 may be set to satisfy a specific condition. More specifically, C1 and C2 may be set to satisfy the following equation (3):
[0169] JPEG2025114669000004.jpg16170
[0170] When the main capacitive elements 1500, 1600 satisfy the above equation (3), the maximum voltage applied to the antenna segments in the antenna structure 1000 can be reduced to improve the resonance effect and increase the stability and efficiency of the plasma system 10.
[0171] The above has mainly described an example in which the antenna structure 1000 is configured with four antenna segments arranged in two turns, but the technical idea of this specification is not limited to this. In the antenna structure 1000 configured with multiple turns each having multiple antenna segments, the main capacitive elements 1500, 1600 and auxiliary capacitive elements can be arranged in the same manner as described above.
[0172] 9 and 10, the antenna structure 1000 is configured in a tubular shape and can include an antenna segment, a first primary capacitive element 1500, a second primary capacitive element 1600, and an auxiliary capacitive element.
[0173] 5 to 8 can be applied in the same manner, and duplicated content will be omitted below unless otherwise specified. For example, in the case of a tubular antenna structure, multiple antenna structures are arranged on different planes, but may be understood to be physically or electrically connected to each other.
[0174] The tubularly configured antenna structure 1000 includes antenna segments that can be arranged in multiple layers.
[0175] 9, the antenna segments may be arranged in two layers on a first plane P1 and a second plane P2 based on the central axis CA. Specifically, the first layer may include first to fourth antenna segments 1110, 1120, 1130, and 1140, and the second layer may include ninth to twelfth antenna segments 1310, 1320, 1330, and 1340. Here, the antenna segments in the first layer may have a first radius of curvature RC1, and the antenna segments in the second layer may have a radius of curvature corresponding to the first radius of curvature RC1.
[0176] Here, the second plane P2 may refer to a virtual plane that is perpendicular to the central axis CA or that meets the central axis CA at a single point, or may refer to a plane that is parallel to the first plane P1.
[0177] The antenna segments in the second layer may be arranged to correspond to the antenna segments in the first layer. For example, if the first to fourth antenna segments 1110, 1120, 1130, and 1140 are arranged in the first to fourth quadrants of the first plane P1, respectively, the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340 can be arranged in the first to fourth quadrants of the second plane P1, respectively.
[0178] The antenna segments in the second layer can extend to lengths corresponding to the lengths of the antenna segments in the first layer. For example, when the first antenna segment 1110 is arranged to extend to a first length, the ninth antenna segment 1310 can extend to the first length. Here, the central angle that the first antenna segment 1110 extending to the first length makes with the central axis CA can similarly correspond to the central angle that the ninth antenna segment 1310 extending to the first length makes with the central axis CA in the second plane P2.
[0179] The distance between the first and second layers may be set based on parasitic capacitance that may occur between the antenna segments. For example, the distance between the first and second layers may be set to a distance that minimizes the effect of parasitic capacitance between the first antenna segment 1110 and the ninth antenna segment 1310 when power is applied to the antenna structure 1000. Specifically, the distance between the first and second layers may be set within a range of 0.5 mm to 1.5 mm. In this case, the distance between the first and second layers may be set to a distance that prevents inter-layer arc discharge when the plasma system 10 is driven at a specific driving frequency.
[0180] The inductance of the antenna segments in the second layer may be set based on the inductance of the antenna segments in the first layer. For example, the inductance of the ninth antenna segment 1310 may correspond to the inductance of the first antenna segment 1110. In yet another example, the inductance of the ninth antenna segment 1310 may be set to be greater than the inductance of the first antenna segment 1110.
[0181] The tubular antenna structure 1000 can be arranged around the plasma generation unit 2000. For example, referring again to FIG. 9, the antenna segments may be arranged around the plasma generation unit 2000. Specifically, the first to fourth antenna segments 1110, 1120, 1130, 1140 and the ninth to twelfth antenna segments 1310, 1320, 1330, 1340 may be arranged to be in contact with the plasma generation unit 2000.
[0182] The tubular antenna structure 1000 may include auxiliary capacitive elements. For example, referring again to FIG. 9 , first to third auxiliary capacitive elements 1711, 1712, and 1713 may be disposed between the first to fourth antenna segments 1110, 1120, 1130, and 1140 on the first layer of the antenna structure 1000. The first auxiliary capacitive element 1711 may be disposed between the first antenna segment 1110 and the second antenna segment 1120. The second auxiliary capacitive element 1712 may be disposed between the second antenna segment 1120 and the third antenna segment 1130. The third auxiliary capacitive element 1713 may be disposed between the third antenna segment 1130 and the fourth antenna segment 1140. Seventh to ninth auxiliary capacitive elements 1751, 1752, and 1753 may be arranged between the ninth to twelfth antenna segments 1310, 1320, 1330, and 1340 on the second layer of the antenna structure 1000. The seventh auxiliary capacitive element 1751 may be arranged between the ninth antenna segment 1310 and the tenth antenna segment 1320. The eighth auxiliary capacitive element 1752 may be arranged between the tenth antenna segment 1320 and the eleventh antenna segment 1330. The ninth auxiliary capacitive element 1753 may be arranged between the eleventh antenna segment 1330 and the twelfth antenna segment 1340.
[0183] Here, the seventh auxiliary capacitive element 1751 may be arranged to be adjacent to the eighth auxiliary capacitive element 1752 in the arc direction and adjacent to the first auxiliary capacitive element 1711 in the direction parallel to the central axis CA. The eighth auxiliary capacitive element 1752 may be arranged to be adjacent to the seventh auxiliary capacitive element 1751 and the ninth auxiliary capacitive element 1753 in the arc direction and adjacent to the second auxiliary capacitive element 1712 in the direction parallel to the central axis CA. The ninth auxiliary capacitive element 1753 may be arranged to be adjacent to the eighth auxiliary capacitive element 1752 in the arc direction and adjacent to the third auxiliary capacitive element 1713 in the direction parallel to the central axis CA.
[0184] The auxiliary capacitive elements may be arranged to have a predetermined positional relationship between them between layers. For example, referring again to FIG. 9, at least two of the first to third auxiliary capacitive elements 1711, 1712, and 1713 and the seventh to ninth auxiliary capacitive elements 1751, 1752, and 1753 may be arranged on an imaginary line parallel to the central axis CA. Specifically, an imaginary extension line connecting the first auxiliary capacitive element 1711 and the seventh auxiliary capacitive element 1751 may be parallel to the central axis CA. In yet another example, the auxiliary capacitive elements of the first layer and the auxiliary capacitive elements of the second layer may be arranged at positions corresponding to each other. Specifically, a virtual extension line connecting any one of the first to third auxiliary capacitive elements 1711, 1712, 1713 and any one of the seventh to ninth auxiliary capacitive elements 1751, 1752, 1753 and a virtual extension line connecting any other one of the first to third auxiliary capacitive elements 1711, 1712, 1713 and any other one of the seventh to ninth auxiliary capacitive elements 1751, 1752, 1753 may be located at a position that intersects or twists on the central axis CA or within a predetermined region from the central axis CA.
[0185] The auxiliary capacitive element may be attached to or spaced apart from the plasma generating portion 2000. For example, referring again to FIG. 8 , the first auxiliary capacitive element 1711 may be spaced apart from the central axis CA by a first radius of curvature RC1 and may be in contact with the plasma generating portion 2000. In yet another example, the first auxiliary capacitive element 1711 may be spaced apart from the central axis CA by a distance greater than the first radius of curvature RC1 and may not be in contact with the plasma generating portion 2000.
[0186] The auxiliary capacitive element disposed within the tubular antenna structure 1000 may include an interlayer capacitive element. For example, referring again to FIG. 9, the first and second layers may be electrically connected in series via a first interlayer capacitive element 1741. Specifically, the first interlayer capacitive element 1741 may connect the fourth antenna segment 1140 constituting the first layer and the ninth antenna segment 1310 constituting the second layer in series. Alternatively, different from what is shown in FIG. 9, the first interlayer capacitive element 1741 may connect the first antenna segment 1110 constituting the first layer and the twelfth antenna segment 1340 constituting the second layer in series.
[0187] Here, the inter-layer capacitive element may have a different shape or a separate connection portion from the other auxiliary capacitive elements to connect between layers. For example, one end and the other end of the first inter-layer capacitive element 1741 may be located on different planes. Specifically, one end of the first inter-layer capacitive element 1741 connected to the fourth antenna segment 1140 of the first layer may be located on the first plane P1, and the other end of the first inter-layer capacitive element 1741 connected to the ninth antenna segment 1310 of the second layer may be located on the second plane P2. In yet another example, the first inter-layer capacitive element 1741 may include a third connection portion extending from one end of the first inter-layer capacitive element 1741 to the fourth antenna segment 1140 and a fourth connection portion extending from the other end of the first inter-layer capacitive element 1741 to the ninth antenna segment 1310. In this case, the third and fourth connection parts may include straight or curved conductors and may be attached to or spaced a certain distance from the plasma generation part 2000. In this case, the antenna segment connected to the first interlayer capacitive element 1741 may have a length that is shorter or longer than the other antenna segments.
[0188] The inclusion of inter-layer capacitive elements in the antenna structure 1000 allows all of the antenna segments within the antenna structure 1000 to be electrically connected.
[0189] The tubularly configured antenna structure 1000 may be physically or electrically connected to the RF power source 200 via the primary capacitive elements 1500 and 1600. For example, referring again to FIG. 9 , the first antenna segment 1110 may be electrically connected to the first terminal of the inverter 230 via the first primary capacitive element 1500, and the twelfth antenna segment 1340 may be electrically connected to the second terminal of the inverter 230 via the second primary capacitive element 1600. Alternatively, the fourth antenna segment 1140 may be electrically connected to the first terminal of the inverter 230 via the first primary capacitive element 1500, and the ninth antenna segment 1310 may be electrically connected to the second terminal of the inverter 230 via the second primary capacitive element 1600.
[0190] The direction of current flow in the antenna structure 1000 can be determined by the connection method between the main capacitive elements 1500 and 1600 and the auxiliary capacitive elements and the antenna segments. For example, referring again to FIG. 9 , if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the ninth antenna segment 1310 are connected in series via the first inter-layer capacitive element 1741, and the second main capacitive element 1600 is connected in series with the twelfth antenna segment 1340, when power is applied to the antenna structure 1000, current may flow in the same direction (clockwise or counterclockwise) through the first and second layers. In this case, if current flows in the same direction through the first and second layers, the strength of the induced electric field for plasma generation may be increased compared to when current flows in different directions through the first and second layers, and the potential difference between the antenna segments may be reduced, thereby reducing the effect of parasitic capacitance.
[0191] The tubularly configured antenna structure 1000 can include antenna segments arranged in multiple turns and multiple layers.
[0192] Referring to FIG. 10, the tubular antenna structure 1000 includes first to fourth antenna segments 1110, 1120, 1130, and 1140 arranged in the first turn of the first layer, fifth to eighth antenna segments 1210, 1220, 1230, and 1240 arranged in the second turn of the first layer, ninth to twelfth antenna segments 1310, 1320, 1330, and 1340 arranged in the first turn of the second layer, thirteenth to sixteenth antenna segments 1410, 1420, 1430, and 1440 arranged in the second turn of the second layer, primary capacitive elements 1500 and 1600, and auxiliary capacitive elements.
[0193] The tubularly configured antenna structure 1000 shown in FIG. 10 may have antenna segments arranged in multiple turns and multiple layers in the same / similar manner as described in FIGS.
[0194] The auxiliary capacitive elements disposed within the multi-turn, multi-layer antenna structure 1000 described above may include inter-turn capacitive elements and inter-layer capacitive elements. For example, referring again to FIG. 10, the multi-turn, multi-layer antenna structure 1000 may include a first inter-turn capacitive element 1731 connecting turns in a first layer, a second inter-turn capacitive element 1733 connecting turns in a second layer, and a first inter-layer capacitive element 1741 connecting the first and second layers.
[0195] On the other hand, if the antenna segments are arranged in three or more layers in the antenna structure 1000, the antenna structure 1000 may include multiple interlayer capacitive elements or interlayer connections.
[0196] Here, the multiple interlayer capacitive elements or interlayer connectors may be arranged to have a predetermined positional relationship with each other. For example, the interlayer capacitive elements may be arranged rotated at a predetermined angle with respect to the central axis CA. Specifically, the first interlayer capacitive element 1741 connecting the first and second layers may be arranged to have a predetermined angle with the second interlayer capacitive element (not shown) connecting the second and third layers with respect to the central axis CA.
[0197] Furthermore, the multiple interlayer capacitive elements or interlayer connectors can connect the antenna segments so that the inter-turn connection region where the turns are connected to each other in each layer forms a predetermined angle with respect to the central axis CA. For example, if the fourth antenna segment 1140 of the first turn and the fifth antenna segment 1210 of the second turn are connected via an auxiliary capacitive element in the first layer, the first interlayer capacitive element 1741 can connect the eighth antenna segment 1240 and the tenth antenna segment 1320, and the second inter-turn capacitive element 1733 can connect the ninth antenna segment 1310 and the fourteenth antenna segment 1420. In this case, because the inter-turn connection region is the region where two different turns are connected in each layer, the plasma generation unit 2000 does not come into contact with the antenna segments in the inter-turn connection region, and it may be difficult to obtain a cooling effect from the cooling water flowing through the antenna segments. However, as described above, by forming a predetermined angle between the turn connection regions where the turns are connected to each other in multiple layers, the regions where the plasma generating section 2000 is not cooled can be distributed differently for each layer.
[0198] In a multi-turn, multi-layer antenna structure 1000, the direction of current flow through each turn on each layer can be determined by the manner in which the primary capacitive elements 1500, 1600 and auxiliary capacitive elements are connected to the antenna segments. For example, referring again to FIG. 10 , if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, the eighth antenna segment 1240 and the ninth antenna segment 1310 are connected in series via the first inter-layer capacitive element 1741, the twelfth antenna segment 1340 and the thirteenth antenna segment 1410 are connected in series via the second inter-turn capacitive element 1733, and the second main capacitive element 1600 is connected in series with the sixteenth antenna segment 1440, when power is applied to the antenna structure 1000, the first turn of the first layer, the second turn of the first layer, the first turn of the second layer, and the second turn of the second layer can carry current in the same direction (clockwise or counterclockwise). In yet another example, if the first main capacitive element 1500 is connected in series with the first antenna segment 1110, the fourth antenna segment 1140 and the fifth antenna segment 1210 are connected in series via the first inter-turn capacitive element 1731, the eighth antenna segment 1240 and the thirteenth antenna segment 1410 are connected in series via the first inter-layer capacitive element 1741, the sixteenth antenna segment 1440 and the ninth antenna segment 1310 are connected in series via the second inter-turn capacitive element 1733, and the second main capacitive element 1600 is connected in series with the twelfth antenna segment 1340, when power is applied to the antenna structure 1000, the first turn of the first layer, the second turn of the first layer, the first turn of the second layer, and the second turn of the second layer can carry current in the same direction (clockwise or counterclockwise).
[0199] As mentioned above, when each turn of each layer carries current in the same direction, the strength of the induced electric field for plasma generation can be increased compared to when currents are carried in different directions, and the potential difference between the antenna segments can be reduced, thereby reducing the effects of parasitic capacitance.
[0200] In the above, the main example has been described in which the multi-turn, multi-layer antenna structure 1000 includes four antenna segments per turn, two turns per layer, and a total of two layers. However, the technical idea of this specification is not limited to this, and the antenna structure 1000 may include p antenna segments per turn, q turns per layer, and a total of r layers (p, q, and r are natural numbers), and it goes without saying that the above content applies in the same / similar manner.
[0201] A case where power is applied to the antenna structure 1000 will be described below with reference to FIGS.
[0202] On the other hand, for the sake of convenience in the following description, unless otherwise specified, it is assumed that the antenna structure 1000 includes a plurality of antenna segments and auxiliary capacitive elements extending in one direction along an arc from one end to the other, as shown in Figures 7 to 10, but the technical idea of this specification is not limited to this.
[0203] FIG. 11 is a diagram of an equivalent circuit of an antenna structure 1000 according to one embodiment of the present disclosure.
[0204] Referring to FIG. 11, an equivalent circuit of the antenna structure 1000 may include a circuit in which capacitors and inductors are alternately connected in series.
[0205] The voltage or potential difference at any node in the equivalent circuit of the antenna structure 1000 can be set based on an AC power source or AC signal applied to the antenna structure 1000 from the RF power source 200. For example, when the RF power source 200 applies an AC voltage having an amplitude V to the antenna structure 1000, the potential difference at one node in the antenna structure 1000 can oscillate with an amplitude equal to or less than V.
[0206] Hereinafter, when AC power is applied to the antenna structure 1000, voltages at different positions within the antenna structure 1000 depending on whether or not a capacitive element is present will be described.
[0207] Here, the position-specific voltage may refer to a voltage with respect to a reference node at a position of an antenna segment within the antenna structure 1000. For example, the position-specific voltage may refer to a voltage with respect to a reference node at one end, the other end, or a specific node between one end and the other end of each antenna segment at a certain point in time after AC power is applied to the antenna structure 1000.
[0208] Here, the reference node may refer to a point that serves as a reference for calculating a position-specific voltage. For example, the reference node may include a ground node, a first or second terminal, one end or the other end, of the RF power source 200, and a point within the antenna structure 1000. For convenience of explanation, the following description will be given assuming that the reference node is one end of the RF power source 200. However, the technical concept of the present specification is not limited thereto and may be applied in the same or similar manner even if the reference node is set differently.
[0209] FIG. 12 is a graph showing the electrical potential as a function of position within an antenna structure 1000 according to one embodiment of the present disclosure.
[0210] 12, when the antenna segments in the antenna structure 1000 are connected in series without a capacitive element, the antenna segments may have different voltage ranges at any given time. For example, when the antenna segments are connected in series as shown in FIG. 6, voltages of different magnitudes may be applied to the adjacent first and fifth antenna segments 1110 and 1210 as AC power is applied. In this case, the effect of parasitic capacitance between the first and fifth antenna segments 1110 and 1210 becomes large, which may be undesirable for plasma guidance.
[0211] 12, if the antenna segments in the antenna structure 1000 are connected in series without a capacitive element, voltage distribution by the capacitive element is not possible, and the magnitude of the voltage applied to each antenna segment may be large. If the magnitude of the voltage applied to each antenna segment is large in this way, unnecessary power consumption may occur and the plasma system 10 may become unstable.
[0212] FIG. 13 is a graph showing voltage as a function of position within an antenna structure 1000 including a capacitive element according to one embodiment of the present disclosure.
[0213] Referring to FIG. 13, the antenna structure 1000 may include a first node N1 to which the first main capacitive element 1500 and the first antenna segment 1110 are connected, a second node N2 to which the first antenna segment 1110 and the first auxiliary capacitive element 1711 are connected, a third node N3 to which the first auxiliary capacitive element 1711 and the second antenna segment 1120 are connected, a fourth node N4 to which the second antenna segment 1120 and the second auxiliary capacitive element 1712 are connected, a first point Pt1 indicating an arbitrary position within the first antenna segment 1110, and a second point Pt2 indicating an arbitrary position within the second antenna segment 1120.
[0214] 13 is a graph showing maximum voltages applied to antenna segments when AC power is applied to the antenna structure 1000, and the symbols shown may represent phase differences. The voltages in FIG. 13 may represent voltages at points where the maximum voltage is present at each position within the antenna structure 1000. In an AC waveform, the maximum voltage is divided into positive and negative values, and the graph in FIG. 13 may be interpreted as representing voltages at each position within the antenna structure 1000 based on the point where the first node N1 has a negative maximum voltage. For example, the first node N1 and the second node N2 having maximum voltages of -V' and +V' each have a maximum voltage of V', which is the absolute value, and this may indicate that AC voltages of opposite signs have been applied. In other words, this may indicate that AC voltages with an amplitude of V' and a phase difference of a half cycle have been applied to the first node N1 and the second node N2. In other words, when a voltage value of -V' is measured across the first node N1, a voltage value of +V' can be measured across the second node N2.
[0215] Referring again to FIG. 13 , in the antenna structure 1000, the voltages of corresponding nodes may correspond to each other. For example, the voltages of the first node N1 and the third node N3 may correspond to each other. Or, the maximum voltages of the first node N1 and the third node N3 may correspond to each other. The voltages of the second node N2 and the fourth node N4 may correspond to each other. Or, the maximum voltages of the second node N2 and the fourth node N4 may correspond to each other. The voltage at one end of the first antenna segment 1110 and the voltage at one end of the second antenna segment 1120 may correspond to each other. The voltage at one end of the first auxiliary capacitive element 1711 and the voltage at one end of the second auxiliary capacitive element 1712 may correspond to each other. The voltage at one end of the first antenna segment 1110 and the voltage at one end of the fifth antenna segment 1210 or the ninth antenna segment 1310 adjacent to the first antenna segment 1110 may correspond to each other.
[0216] Meanwhile, the effective values of the voltages of corresponding nodes may correspond to each other. For example, the effective values of the voltages of the first node N1 and the third node N3, and the effective values of the voltages of the second node N2 and the fourth node N4 may correspond to each other.
[0217] Here, the voltages of multiple nodes corresponding to each other or multiple nodes having voltages corresponding to each other may mean that the multiple nodes have the same voltage or maximum voltage with respect to the reference node, or that the difference between the voltages or maximum voltages that the multiple nodes have with respect to the reference node is within a predetermined range.
[0218] The multiple antenna segments may include corresponding points. For example, a first point Pt1 located between one end and the other end of the first antenna segment 1110 may correspond to a second point Pt1 located between one end and the other end of the second antenna segment 1120. Specifically, the distance between the first point Pt1 in the first antenna segment 1110 and one end of the first antenna segment 1110 may correspond to the distance between the second point Pt2 and one end of the second antenna segment 1120. In another example, the first point Pt1 in the first antenna segment 1110 may correspond to a third point (not shown) in the fifth antenna segment 1210. In this case, the angle between one end of the first antenna segment 1110, the central axis CA, and the first point Pt1 may correspond to the angle between one end of the fifth antenna segment 1210, the central axis CA, and the third point Pt1. Specifically, an extension line connecting the first point Pt1 and the third point may intersect with or be twisted relative to the central axis CA. In yet another example, the first point Pt1 in the first antenna segment 1110 may correspond to a fourth point (not shown) in the ninth antenna segment 1310. Specifically, an extension line connecting the first point Pt1 and the fourth point may be parallel to or twisted relative to the central axis CA.
[0219] Corresponding points in the plurality of antenna segments may have corresponding voltages, or corresponding points in the plurality of antenna segments may have corresponding effective voltages. In this way, when the antenna segments are adjacent to each other, the influence of parasitic capacitance can be reduced by having corresponding voltages at corresponding points.
[0220] Here, "voltages of multiple points correspond to each other" or "multiple points have corresponding voltages" may mean that the multiple points have the same voltage or maximum voltage with respect to a reference node, or that the difference between the voltages or maximum voltages of the multiple nodes with respect to the reference node is within a predetermined range. Also, "multiple points correspond to each other in terms of the angles formed by one end of each antenna segment and the central axis CA" may mean that the multiple points are positioned at the same or different angles rotated from one end of each antenna segment with respect to the central axis CA.
[0221] 13, the magnitude of the voltage at any point within the antenna segment may be smaller than the magnitude of the voltage at the node where the antenna segment and the capacitive element are connected. For example, the maximum voltage at the first point Pt1 and the second point Pt2 may be smaller than the maximum voltage at the second node N2 or the fourth node N4.
[0222] The voltages at any node or location within the antenna structure 1000 may have different phases or different signs at any time. For example, at one time, the voltages at the first node N1 and the third node N2 may have the same phase, and the first node N1 and the second node N2 may have voltages that are equal in magnitude but opposite in phase or sign to each other. In yet another example, the second node N2 and the third node N3 may have voltages that are equal in magnitude but opposite in phase or sign to each other.
[0223] For the sake of convenience, the voltages at nodes and points have been described above with reference to a specific antenna segment within the antenna structure 1000, but the technical ideas of this specification are not limited thereto and can be applied in the same / similar manner to each antenna segment within the antenna structure 1000.
[0224] The voltage at each position within the antenna structure 1000 may decrease as the number of auxiliary capacitive elements included in the antenna structure 1000 increases. Alternatively, the voltage at each position within the antenna structure 1000 may be determined based on the inductance of the antenna segments or the capacitance of the auxiliary capacitive elements included in the antenna structure 1000. Specifically, unlike the configuration shown in FIG. 13, when auxiliary capacitive elements are disposed between the antenna segments, the magnitudes of the voltages applied to the antenna segments are determined to correspond to each other, thereby reducing the influence of parasitic capacitance between adjacent antenna segments. Furthermore, when auxiliary capacitive elements are disposed within the antenna structure 1000, the magnitude of the voltage applied to the antenna segments decreases, reducing power consumption by the antenna structure 1000 and improving the safety of the plasma system 10.
[0225] The main capacitive elements 1500, 1600 can reduce the amplitude of the voltage applied to the antenna structure 1000. Alternatively, the main capacitive elements 1500, 1600 can reduce the maximum amplitude of the voltage that can be applied to each antenna segment.
[0226] Alternatively, by connecting the main capacitive elements 1500, 1600 to the antenna segments, the maximum voltage of the nodes in the antenna structure 1000 relative to the reference node may not be zero. For example, if the main capacitive elements 1500, 1600 create a voltage drop relative to the reference node, the first through fourth nodes N1, N2, N3, N4 may have non-zero maximum voltages.
[0227] Alternatively, the main capacitive elements 1500, 1600 can apply voltages of the same amplitude to nodes within the antenna structure 1000. For example, the main capacitive elements 1500, 1600 can cause the first node N1 and the second node N2 to have voltages of the same amplitude relative to a reference node. In yet another example, the main capacitive elements 1500, 1600 can apply voltages of equal amplitude but opposite signs to the first node N1 and the second node N2. In this manner, the main capacitive elements 1500, 1600 can reduce the voltage or maximum voltage applied to components within the antenna structure 1000, thereby improving the electrical durability of the antenna structure 1000.
[0228] Meanwhile, when the plasma system 10 is operated, the temperature may rise as inductively coupled plasma is induced in the plasma generating unit 2000 by the antenna structure 1000. Accordingly, the plasma generating unit 2000 may be damaged. To prevent this, the antenna structure 1000 includes a cooling water passage to absorb the heat of the plasma generating unit 2000. Here, the degree to which the antenna structure 1000 absorbs the heat generated in the plasma generating unit 2000 may vary depending on the structure and shape of the antenna structure 1000.
[0229] Below, with reference to Figures 14 and 15, we will explain the structure and shape of the antenna structure 1000 for efficiently absorbing heat generated in the plasma generating section 2000 by inducing plasma when operating the plasma system 10 according to one embodiment of this specification.
[0230] FIG. 14 is a diagram of an antenna structure 1000 having a square cross section according to one embodiment of the present disclosure.
[0231] FIG. 15 is a diagram of cross section AA' of an antenna structure 1000 according to one embodiment of the present disclosure.
[0232] 14, the antenna structure 1000 may include a turn antenna, antenna ends, inter-turn connections, and a fastening portion 3400. Specifically, the antenna structure 1000 may include first to third turn antennas 3110, 3120, 3130, first and second antenna ends 3310, 3320, first and second inter-turn connections 3210, 3220, and a fastening portion 3400.
[0233] The turn antenna may refer to an antenna that forms one turn within the antenna structure 1000. For example, as shown in FIG. 14, the turn antenna may include first to third turn antennas 3110, 3120, and 3130. Specifically, the first to third turn antennas 3110, 3120, and 3130 may be configured in a circular or annular shape with different radii of curvature based on a central axis CA. More specifically, the second turn antenna 3120 may be arranged to surround the first turn antenna 3110, and the third turn antenna 3130 may be arranged to surround the second turn antenna 3120. In this case, the first to third turn antennas 3110, 3120, and 3130 may be arranged on a horizontal axis HA perpendicular to the central axis CA. Alternatively, the first to third turn antennas 3110, 3120, and 3130 may be arranged at different distances from the horizontal axis HA.
[0234] The turn antenna may have a rectangular cross section, although the technical idea of the present specification is not limited thereto, and the cross section of the turn antenna may be a polygon, a circle, an ellipse, or a figure formed of curves and straight lines, in addition to a rectangular shape.
[0235] The turn antenna may be physically or electrically connected to the RF power source 200 via the terminal antenna. For example, the first turn antenna 3110 may be physically or electrically connected to the first antenna terminal 3310, and the first antenna terminal 3310 may be physically or electrically connected to one end of the RF power source 200. Also, for example, the third turn antenna 3130 may be physically or electrically connected to the second antenna terminal 3320, and the second antenna terminal 3320 may be physically or electrically connected to the other end of the RF power source 200.
[0236] The turn antennas may be electrically or physically connected to other turn antennas via inter-turn connections. For example, the first turn antenna 3110 may be electrically or physically connected to one end of the first inter-turn connection portion 3210, and the second turn antenna 3120 may be electrically or physically connected to the other end of the first inter-turn connection portion 3210. Alternatively, the second turn antenna 3120 may be electrically or physically connected to one end of the second inter-turn connection portion 3220, and the third turn antenna 3130 may be electrically or physically connected to the other end of the second inter-turn connection portion 3220.
[0237] The antenna termination may provide a physical or electrical connection between the turn antenna and the RF power source 200 .
[0238] The antenna terminals may include conductors extending in any direction. For example, referring again to FIG. 14 , the first antenna terminal 3310 may extend in a direction parallel to the central axis CA, and the second antenna terminal 3320 may extend in a direction perpendicular to the central axis CA. However, the technical concept of this specification is not limited thereto, and the first and second antenna terminals 3310, 3320 may extend in any direction depending on the inter-turn connection method, etc.
[0239] The inter-turn connections can be formed in various shapes. For example, the inter-turn connections can have a curved or straight shape. The inter-turn connections will be described in detail below.
[0240] The fastening portion 3400 can prevent at least a portion of the antenna structure 1000 from expanding or deforming. Specifically, the plasma generator 2000 can expand or deform due to high-temperature thermal energy generated by plasma induction, which can cause the antenna structure 1000, which is in close contact with the plasma generator 2000, to expand or deform. The fastening portion 3400 can prevent such deformation of the antenna structure 1000. For example, referring again to FIG. 14 , the elastic fastening portion 3400 can be coupled to the first turn antenna 3110 adjacent to the plasma generator 2000. The inclusion of the fastening portion 3400 allows the antenna structure 1000 to closely contact the plasma generator 2000 and maintain the close contact even when plasma is induced, thereby increasing the efficiency of cooling performed by the antenna structure 1000, which will be described later.
[0241] Here, the clamping portion 3400 can provide a clamping force equal to or greater than a preset value to the antenna structure 1000. For example, the clamping portion 3400 can include a stretchable or elastic material. Also, for example, the clamping portion 3400 can include a metal having a length shorter than the length of the object to be clamped.
[0242] Meanwhile, the antenna structure 1000 can cool the plasma generating unit 2000 using cooling water. To this end, referring to Fig. 14, the turn antenna in the antenna structure 1000 has a predetermined shape and can include a cooling water flow path. Specifically, the first to third turn antennas 3110, 3120, and 3130 include first to third cooling water flow paths CFP_1, CFP_2, and CFP_3, respectively, and the first turn antenna 3110 comes into contact with the plasma generating unit 2000 and can absorb heat generated in the plasma generating unit 2000 using the cooling water that flows through the first to third cooling water flow paths CFP_1, CFP_2, and CFP_3.
[0243] Here, the cooling water may include a fluid at or below a preset temperature.
[0244] The turn antenna may include an inner diameter surface and an outer diameter surface. For example, the first to third turn antennas 3110, 3120, and 3130 may include first to third inner diameter surfaces 3111, 3121, and 3131 and first to third outer diameter surfaces 3112, 3122, and 3132, respectively. Here, the inner diameter surface and the outer diameter surface may be one of multiple surfaces forming the turn antenna. Here, the inner diameter surface and the outer diameter surface may refer to the inner and outer surfaces of the turn antenna that enclose the central axis CA. Also, here, they may refer to opposing surfaces of the turn antenna that are positioned in a direction away from the central axis CA, and the inner diameter surface may be closer to the central axis CA of the antenna structure 1000 than the outer diameter surface. In this case, the cross-sectional shape of the turn antenna may be formed based on at least the inner diameter surface and the outer diameter surface. Meanwhile, the turn antenna may include an upper surface, a lower surface, etc. in addition to the inner diameter surface and the outer diameter surface.
[0245] The cooling water flow path may include surfaces corresponding to the inner and outer diameter surfaces of the turn antenna. For example, the first cooling water flow path CFP_1 may include a first surface S11 corresponding to the first inner diameter surface 3111 and a second surface S12 corresponding to the first outer diameter surface 3112. The cross-sectional shape of the first cooling water flow path CFP_1 may be formed based on at least the first surface S11 and the second surface S12. As another example, the second cooling water flow path CFP_2 may include a third surface S21 corresponding to the second inner diameter surface 3121 and a fourth surface S22 corresponding to the second outer diameter surface 3122. The cross-sectional shape of the second cooling water flow path CFP_2 may be formed based on at least the third surface S21 and the fourth surface S22. Meanwhile, the cooling water flow path may include an upper surface, a lower surface, etc. in addition to the surfaces corresponding to the inner diameter surface and the outer diameter surface.
[0246] In the above, the cooling water flow path can be interpreted as being defined by the inner surface of the turn antenna. For example, one surface of the cooling water flow path can be interpreted as being substantially the same as the inner surface of the turn antenna. Specifically, the first surface S11 and the second surface S12 of the first cooling water flow path CFP_1 can be interpreted as being the inner surface of the first turn antenna 3110, and the third surface S21 and the fourth surface S22 of the second cooling water flow path CFP_2 can be interpreted as being the inner surface of the second turn antenna 3120.
[0247] The antenna structure 1000 can absorb heat from the plasma generating unit 2000 through the inner diameter surface of the turn antenna that contacts the plasma generating unit 2000 and one surface of the cooling water flow path that corresponds to the inner diameter surface.
[0248] To improve cooling efficiency or to promote heat conduction, the antenna structure 1000 may be in surface contact with the plasma generation unit 2000. For example, referring again to FIG. 15 , the first inner diameter surface 3111 of the first turn antenna 3110 is formed parallel to the outer wall or the central axis CA of the plasma generation unit 2000, and the first turn antenna 3110 may be in surface contact with the plasma generation unit 2000 through the first inner diameter surface 3111. In this case, the first surface S11 of the first coolant flow path CFP_1 corresponding to the first inner diameter surface 3111 is parallel to the first inner diameter surface 3111 and the outer wall or the central axis CA of the plasma generation unit 2000, and the antenna structure 1000 may absorb heat from the plasma generation unit 2000 through the first inner diameter surface 3111 and the first surface S11.
[0249] The cross section of the antenna structure 1000 may be rectangular, which improves the cooling efficiency of the plasma generating unit 2000. For example, referring again to Fig. 15, the cross sections of the first to third turn antennas 3110, 3120, 3130 may be rectangular, and therefore the first to third inner diameter surfaces 3111, 3121, 3131 may be parallel to the first to third outer diameter surfaces 3112, 3122, 3132, respectively. In this case, the cross section of the cooling water flow path may also be rectangular.
[0250] Here, the first inner diameter surface 3111, the first surface S11, the second surface S12, and the first outer diameter surface 3112 may be parallel to one another. Therefore, the distance between the first inner diameter surface 3111 and the first surface S11 may be equal within a certain range from the horizontal axis HA, and the distance between the second surface S12 and the first outer diameter surface 3112 may also be equal within a certain range from the horizontal axis HA.
[0251] Here, the second inner diameter surface 3121 of the second turn antenna 3120 and the third surface S21 of the second coolant flow path CFP_2 may be parallel to the first outer diameter surface 3112 of the first turn antenna 3110 and the second surface S12 of the first coolant flow path CFP_1. Therefore, the distance between the second surface S12 and the third surface S21 may be equal within a certain range from the horizontal axis HA.
[0252] On the other hand, if the cross section of the antenna structure 1000 is rectangular, energy loss may occur due to parasitic capacitance between the turn antennas. For example, as shown in Fig. 15, if the first outer diameter surface 3112 of the first turn antenna 3110 and the second inner diameter surface 3121 of the second turn antenna 3120 are parallel to each other, energy loss may occur due to parasitic capacitance.
[0253] The energy loss due to parasitic capacitance between the turn antennas can vary depending on the inter-turn distance between the turn antennas. For example, in Figure 15, the effect of parasitic capacitance in the antenna structure 1000 can vary depending on the first inter-turn distance TD_1 between the first turn antenna 3110 and the second turn antenna 3120 and the second inter-turn distance TD_2 between the second turn antenna 3120 and the third turn antenna 3130.
[0254] Therefore, the antenna structure 1000 can reduce the influence of parasitic capacitance by setting the inter-turn distance between the turn antennas within a predetermined range. In this case, the predetermined range can be set taking into consideration the influence of parasitic capacitance and the overall width of the antenna structure 1000. For example, the inter-turn distance may be set within a range of 0.5 mm to 3.5 mm.
[0255] The inter-turn distances may all be the same or different. For example, the first inter-turn distance TD_1 and the second inter-turn distance TD_2 may have the same value within a preset range. In yet another example, the first inter-turn distance TD_1 and the second inter-turn distance TD_2 may have different lengths. For example, the first inter-turn distance TD_1 may have a value greater or smaller than the second inter-turn distance TD_2.
[0256] The foregoing has described a turn antenna having a square cross section in conjunction with the antenna structure 1000 that performs the cooling function, and the structure and shape of the antenna structure 1000 that reduces the effects of the associated parasitic capacitance.
[0257] Other embodiments of the structure and shape of the antenna structure 1000 that reduces the influence of parasitic capacitance while performing a cooling function will be described below with reference to FIGS.
[0258] FIG. 16 is a diagram of an antenna structure 1000 having a square cross section and a circular cross section according to one embodiment of the present disclosure.
[0259] 17 and 18 are diagrams of cross section AA' of an antenna structure 1000 having at least two cross-sectional shapes according to an embodiment of the present disclosure.
[0260] 16 and 17, the antenna structure 1000 can include turn antennas having different shapes. For example, the antenna structure 1000 can include a first turn antenna 3110 having a square cross section and second and third turn antennas 3120, 3130 having circular cross sections.
[0261] In the following, unless otherwise stated, the content relating to the antenna structure 1000 previously described with reference to FIG. 14 is equally applicable.
[0262] The antenna structure 1000 may include a turn antenna that is in surface contact with the plasma generation unit 2000. For example, the antenna structure 1000 may include a first turn antenna 3110 that is in surface contact with the plasma generation unit 2000 via a first inner diameter surface 3111.
[0263] The turn antennas in the antenna structure 1000 may have surfaces that are not parallel to each other to reduce the effect of parasitic capacitance between the turn antennas. For example, referring again to Figure 17, the first inner diameter surface 3111 and the first outer diameter surface 3112 of the first turn antenna 3110 are parallel to the outer wall of the plasma generation section 2000, but the second inner diameter surface 3121 and the second outer diameter surface 3122 of the second turn antenna 3120 do not have to be parallel to the plasma generation section 2000 and the first inner diameter surface 3111.
[0264] The antenna structure 1000 may include turn antennas with different cross sections to reduce the effect of parasitic capacitance between the turn antennas. For example, referring again to FIG. 17, the antenna structure 1000 may include a first turn antenna 3110 having a rectangular cross section and a second turn antenna 3120 having a circular cross section. In this case, the first coolant flow path CFP_1 may have a rectangular cross section and the second coolant flow path CFP_2 may have a circular cross section corresponding to the first turn antenna 3110 and the second turn antenna 3120, respectively. However, the cross section of the turn antenna is not limited to a rectangular or circular shape and may be a polygonal shape, a circle, an ellipse, or a figure formed of curves and straight lines.
[0265] As mentioned above, the effect of parasitic capacitance may be reduced if the antenna structure 1000 includes turn antennas with non-parallel faces or different cross sections.
[0266] Turn antennas with different cross sections have the same inter-turn distance, but the distance between the surfaces of the turn antennas does not have to be constant. For example, referring again to FIG. 17, first to third turn antennas 3110, 3120, and 3130 may be arranged so that the first inter-turn distance TD_1 and the second inter-turn distance TD_2 are equal relative to the horizontal axis HA. Also, referring again to FIG. 17, the distance between first outer diameter surface 3112 of first turn antenna 3110 and first inner diameter surface 3121 of second turn antenna 3120 does not have to be constant. Specifically, in FIG. 17, the distance between first turn antenna 3110 and second turn antenna 3120 increases as they move away from each other in a direction parallel to the central axis CA or in the longitudinal direction of plasma generation unit 2000 relative to the horizontal axis HA. This may reduce the effect of parasitic capacitance compared to when the distance is constant. Alternatively, when the first turn antenna 3110 and the second turn antenna 3120 are arranged on the same plane, the distance between the first turn antenna 3110 and the second turn antenna 3120 increases as they move away from each other in a direction parallel to the central axis CA or in the longitudinal direction of the plasma generating section 2000, based on the plane, and the effect of parasitic capacitance can be reduced more than when the distance is constant.
[0267] Alternatively, the antenna structure 1000 may include turn antennas that include inner and outer diameter surfaces with different shapes to reduce the effect of parasitic capacitance between the turn antennas.
[0268] 18, the first turn antenna 3110 in contact with the plasma generating unit 2000 may include a first inner diameter surface 3111 parallel to the outer wall of the plasma generating unit 2000 and a first outer diameter surface 3112 that is not parallel to the outer wall of the plasma generating unit 2000. Alternatively, the first turn antenna 3110 may include a first inner diameter surface 3111 parallel to the outer wall of the plasma generating unit 2000 and a first outer diameter surface 3112 that curves in a direction away from the central axis CA along the vertical direction. In this case, the first turn antenna 3110 may have a cross section made up of straight lines and curves. Specifically, the first turn antenna 3110 may have a cross section that is a combination of a rectangle and a semicircle, a semicircle, or a semi-ellipse.
[0269] The antenna structure 1000 including the turn antenna having the inner and outer diameter surfaces or cross sections as described above can efficiently cool the plasma generating section 2000 while effectively reducing energy loss due to parasitic capacitance inside.
[0270] While the structure and shape of the antenna structure 1000 that performs the cooling function have been described above with reference to the antenna structure 1000 having three turn antennas, the technical concept of this specification is not limited thereto and can be applied to an antenna structure 1000 having one or more turn antennas. Furthermore, it goes without saying that the technical concept of this specification can be applied to an antenna structure 1000 having multiple layers, and can also be applied to an antenna structure 1000 having the above-mentioned multiple antenna segments.
[0271] The inter-turn connection portions that connect the turn antennas in the antenna structure 1000 will be specifically described below with reference to FIGS.
[0272] 19 to 22 are diagrams relating to a method of connecting antennas having different cross sections within an antenna structure according to an embodiment of the present specification.
[0273] The inter-turn connection portion may refer to a portion where different turn antennas are connected to each other or a portion that connects different turn antennas. In the following, to describe an inter-turn connection portion that connects turn antennas having different cross sections, the first inter-turn connection portion 3210 shown in FIG. 15 will be described as a representative example, but the technical concept of this specification is not limited thereto.
[0274] The first inter-turn connection portion 3210 may be formed to have a bend. For example, referring to Figures 16 and 19, the first turn antenna 3110 and the second turn antenna 3120 may be electrically or physically connected to each other in a bent state.
[0275] The first inter-turn connection portion 3210 may be formed linearly. For example, referring to Figures 20 and 21, the first turn antenna 3110 and the second turn antenna 3120 may be electrically or physically connected in the same straight line.
[0276] The first inter-turn connection portion 3210 may include one end connected to the first turn antenna 3110 and the other end connected to the second turn antenna 3120. Here, the one end and the other end of the first inter-turn connection portion 3210 may have different cross sections. Specifically, the cross section of one end of the first inter-turn connection portion 3210 may have the cross section of the first turn antenna 3110, and the cross section of the other end of the first inter-turn connection portion 3210 may have the cross section of the second turn antenna 3120. For example, the cross section of one end of the first inter-turn connection portion 3210 may be rectangular, and the cross section of the other end of the first inter-turn connection portion 3210 may be circular.
[0277] The first inter-turn connection portion 3210 can be formed by modifying the shape of at least one of the first turn antenna 3110 and the second turn antenna 3120 and connecting them.
[0278] As an example, referring again to FIG. 20, the first inter-turn connection 3210 can be formed by expanding or extending the end of the first turn antenna 3110 and connecting the second turn antenna 3120 thereto.
[0279] Here, the size and shape of the cross section of the first inter-turn connection portion 3210 may change from one end to the other. For example, the cross-sectional area of the first inter-turn connection portion 3210 may gradually increase and then decrease from one end to the other. In yet another example, the cross-sectional area of the first inter-turn connection portion 3210 may change from a square shape to a square shape with rounded corners to a circle from one end to the other.
[0280] As another example, referring again to FIG. 21, the first inter-turn connection 3210 may be formed by joining an end of the second turn antenna 3120 to an end of the first turn antenna 3110 and expanding or extending the second turn antenna 3120.
[0281] When the first turn antenna 3110 and the second turn antenna 3120 are connected, the cross sections of the first turn antenna 3110 and the second turn antenna 3120 may be set to correspond to each other. For example, the cross-sectional width of the first turn antenna 3110 may be set to be the same as or different from the cross-sectional width of the second turn antenna 3120. Specifically, the cross-sectional width of the first turn antenna 3110 may be larger than the cross-sectional width of the second turn antenna 3120 so that the second turn antenna 3120 can be easily inserted into the first turn antenna 3110. Alternatively, the cross-sectional widths of the first turn antenna 3110 and the second turn antenna 3120 may be the same, but as shown in FIGS. 20 and 21 , either turn antenna may be expanded, extended, contracted, or the like when interconnected. The cross-sectional size of each turn antenna may be set in consideration of the smooth flow of cooling water.
[0282] The first inter-turn connection portion 3210 may be provided in a modular form. For example, referring to FIG. 22 , the first inter-turn connection portion 3210 may include an insertion portion having a size corresponding to the cross-sectional size of each of the first turn antenna 3110 and the second turn antenna 3120. In this case, the first turn antenna 3110 and the second turn antenna 3120 are detachable from the first inter-turn connection portion 3210. Furthermore, for example, the first inter-turn connection portion 3210 may electrically or physically connect the first turn antenna 3110 and the second turn antenna 3120, but may also perform a specific function. Specifically, the first inter-turn connection portion 3210 may include a capacitive element. In this case, the first inter-turn connection portion 3210 may function as the inter-turn capacitive element described above.
[0283] Meanwhile, the shape of the cooling water flow path in the inter-turn connection portion may be deformed. For example, the cooling water flow path in the first inter-turn connection portion 3210 may gradually narrow. As another example, the cooling water flow path in the first inter-turn connection portion 3210 may gradually widen. As yet another example, the cooling water flow path in the first inter-turn connection portion 3210 may gradually widen and then narrow. In this case, as the shape of the cooling water flow path is deformed, the flow rate of the cooling water can be changed.
[0284] Hereinafter, with reference to FIG. 23, another method for efficiently cooling the heat generated in the plasma generating unit 2000 by plasma induction will be described.
[0285] FIG. 23 is a diagram illustrating a heat transfer member 300 according to one embodiment of the present disclosure.
[0286] 23, the heat transfer member 300 can transfer heat between the antenna structure 1000 and the plasma generation unit 2000. For example, the heat transfer member 300 can absorb heat generated in the plasma generation unit 2000 in response to plasma induction and provide the heat to the antenna structure 1000.
[0287] The heat transfer member 300 may be made of a material with high thermal conductivity, for example, the heat transfer member 300 may be made of at least one of aluminum, gold, silver, tungsten, and / or copper.
[0288] The heat transfer member 300 may have various shapes. For example, the heat transfer member 300 may have a shape corresponding to the plasma generation unit 2000. Specifically, if the plasma generation unit 2000 has a hollow cylindrical shape, the heat transfer member 300 may also have a hollow cylindrical shape. In another example, the heat transfer member 300 may have a shape for surface contact with the outer surface of the plasma generation unit 2000. Specifically, at least a portion of the heat transfer member 300 may be curved or flat. As another example, the heat transfer member 300 may be composed of multiple physically separated plates. However, the shape of the heat transfer member 300 is not limited to the above-mentioned shapes. The heat transfer member 300 may have any shape that allows surface contact with the plasma generation unit 2000 or the antenna structure 1000, as described below.
[0289] The heat transfer member 300 may be disposed between the antenna structure 1000 and the plasma generation unit 2000. For example, the heat transfer member 300 may be disposed so as to surround the plasma generation unit 2000, and the antenna structure 1000 may be disposed so as to surround the heat transfer member 300. Specifically, the heat transfer member 300 may be disposed so as to be in surface contact with the outer wall of the plasma generation unit 2000 and in surface contact with the innermost turn antenna (e.g., the first turn antenna 3110) of the antenna structure 1000 based on the central axis CA.
[0290] As described above, the plasma generation unit 2000 and the antenna structure 1000 can be thermally coupled via the heat transfer member 300. In this case, since the heat transfer member 300 is made of a material with high thermal conductivity, heat generated in the plasma generation unit 2000 in response to plasma induction can be transferred more quickly to the antenna structure 1000 via the heat transfer member 300, thereby improving the efficiency of plasma induction and maintenance and improving the durability of the plasma generation unit 2000.
[0291] The above mainly describes the case where the antenna structure 1000 is composed of multiple turn antennas, but it goes without saying that the technical ideas of this specification are not limited to this and can be similarly applied to cases where the antenna structure 1000 is composed of a single turn antenna, a single turn antenna with multiple layers, a multiple antenna segment, etc.
[0292] Methods according to the embodiments may be embodied in the form of program instructions that can be executed by various computer means and recorded on a computer-readable medium. The computer-readable medium may include, alone or in combination, program instructions, data files, data structures, and the like. The program instructions recorded on the medium may be specially designed and constructed for the embodiments, or may be known and available to those skilled in the art of computer software. Examples of computer-readable storage media include magnetic media such as hard disks, floppy disks, and magnetic tape; optical media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specially configured to store and execute program instructions, such as ROM, RAM, and flash memory. Examples of program instructions include not only machine language code, such as produced by a compiler, but also high-level language code executable by a computer using an interpreter, for example. The above hardware devices may be configured to operate as one or more software modules to perform the operations of the embodiments, or vice versa.
[0293] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art will appreciate that various modifications and variations may be made to the above description, including, for example, that the described techniques may be performed in an order different from that described, and / or that the components of the described systems, structures, devices, circuits, etc. may be combined or combined in a manner different from that described, and that other components or equivalents may be substituted or replaced, and still achieve suitable results.
[0294] Accordingly, other configurations, embodiments, and equivalents are intended to fall within the scope of the following claims.
Claims
1. An antenna structure that applies an AC power source to induce plasma in a chamber, first and second antenna segments arranged on a first plane intersecting an imaginary central axis so as to have a first radius of curvature and a second radius of curvature with respect to the central axis; a first capacitive load electrically connecting the first and second antenna segments in series; An antenna structure, wherein when the first antenna segment has the first radius of curvature and extends a first length from one end of the first capacitive load, the second antenna segment has the second radius of curvature and extends a second length corresponding to the first length from the other end of the first capacitive load, and the sum of the first length and the second length is shorter than the circumference of a circle having a radius equal to the first radius of curvature or the second radius of curvature.
2. the first and second radii of curvature are equal to one another, the first and second lengths are equal to one another, 10. The antenna structure of claim 1, wherein the first antenna segment and the second antenna segment have the same inductance.
3. a third antenna segment disposed in the first plane to have a third radius of curvature greater than the first radius of curvature; a fourth antenna segment disposed in the first plane to have a fourth radius of curvature greater than the second radius of curvature; a second capacitive load electrically connecting the third and fourth antenna segments in series; the third antenna segment extends from one end of the second capacitive load a third length longer than the first length; 2. The antenna structure of claim 1, wherein the fourth antenna segment extends from the other end of the second capacitive load a fourth length that is longer than the second length.
4. 4. The antenna structure of claim 3, wherein a line passing through said first and second capacitive loads passes through said central axis.
5. 4. The antenna structure according to claim 3, wherein a central angle of a sector formed by the first antenna segment is equal to a central angle of a sector formed by the third antenna segment.
6. 4. The antenna structure of claim 3, further comprising an inter-turn capacitive load electrically connecting said second antenna segment and said third antenna segment in series.
7. 7. The antenna structure of claim 6, wherein the first and second capacitive loads and the inter-turn capacitive load have the same capacitance.
8. a fifth antenna segment having the first radius of curvature relative to the central axis; a sixth antenna segment having the second radius of curvature; a third capacitive load disposed between the fifth and sixth antenna segments to electrically connect the fifth and sixth antenna segments in series; the fifth antenna segment and the sixth antenna segment are disposed in a second plane that intersects the central axis; 2. The antenna structure of claim 1, wherein the first plane and the second plane are different planes.
9. 9. The antenna structure of claim 8, further comprising a first inter-plane capacitive load electrically connecting the second antenna segment and the fifth antenna segment in series.
10. a seventh antenna segment having the first radius of curvature relative to the central axis; an eighth antenna segment having the second radius of curvature; a fourth capacitive load disposed between the seventh and eighth antenna segments to electrically connect the seventh and eighth antenna segments in series; a second interlayer capacitive load electrically connecting the sixth antenna segment and the seventh antenna segment in series, the seventh antenna segment and the eighth antenna segment are disposed on a third plane that intersects the central axis and is different from the first plane and the second plane; 10. The antenna structure of claim 9, wherein the first inter-layer capacitive load and the second inter-layer capacitive load have a preset angle with respect to the central axis.
11. the first antenna segment extends from one end to the other end, the other end of the first antenna segment being electrically connected to one end of the first capacitive load; 2. The antenna structure of claim 1, wherein the second antenna segment extends from one end to the other end, and the one end of the second antenna segment is electrically connected to the other end of the first capacitive load.
12. 12. The antenna structure of claim 11, wherein when the AC power source is applied to the antenna structure, a maximum voltage at the other end of the first antenna segment relative to a reference node corresponds to a maximum voltage at the other end of the second antenna segment relative to the reference node.
13. 12. The antenna structure of claim 11, wherein when the AC power source is applied to the antenna structure, a voltage at one end of the second antenna segment relative to the other end of the second antenna segment corresponds to a voltage at the other end of the first antenna segment relative to the one end of the first antenna segment.
14. 12. The antenna structure of claim 11, wherein when the AC power source is applied to the antenna structure, a maximum voltage magnitude at the other end of the first antenna segment relative to a reference node corresponds to a maximum voltage magnitude at one end of the second antenna segment relative to the reference node.
15. 12. The antenna structure of claim 11, wherein at any time after the AC power source is applied to the antenna structure, the voltage at the other end of the first antenna segment relative to a reference node and the voltage at the one end of the second antenna segment relative to the reference node have opposite signs.
16. a first point located between one end and the other end of the first antenna segment; a second point located between one end and the other end of the second antenna segment, 12. The antenna structure of claim 11, wherein when the AC power source is applied to the antenna structure, a maximum voltage at the first point relative to a reference node corresponds to a maximum voltage at the second point relative to the reference node.
17. 12. The antenna structure of claim 11, wherein at any time after the AC power is applied to the antenna structure, the voltage at the other end of the first antenna segment relative to a reference node and the voltage at the other end of the second antenna segment relative to the reference node correspond to each other.
18. 2. The antenna structure according to claim 1, wherein the antenna structure is configured in at least one of a flat plate shape that guides plasma to an upper portion or a lower portion and a tubular shape that guides plasma to a center portion.
19. a plasma generating section including an internal space in which plasma is induced; a first antenna structure disposed outside the plasma generating unit and having a first radius of curvature with respect to a virtual central axis, the first antenna structure includes a plurality of first antenna segments having the first radius of curvature and at least one first capacitive load disposed between the plurality of first antenna segments such that the plurality of first antenna segments are electrically connected in series; the plurality of first antenna segments at least partially overlap with an imaginary first plane perpendicular to the central axis; A plasma generation device, wherein each of the plurality of first antenna segments has a first length, and the total length of the plurality of first antenna segments is shorter than the circumference of a circle having the first radius of curvature.
20. a second antenna structure disposed on the first plane so as to have a second radius of curvature relative to the central axis that is greater than the first radius of curvature; the second antenna structure includes a plurality of second antenna segments having the second radius of curvature and at least one second capacitive load disposed between the plurality of second antenna segments such that the plurality of second antenna segments are electrically connected in series; 20. The plasma generation device according to claim 19, wherein each of the second antenna segments has a first length, and the sum of the lengths of the second antenna segments is shorter than the circumference of a circle having a radius equal to the second radius of curvature.
21. The thickness of the plasma generating portion is 0.5 mm or more and 30 mm or less, 20. The plasma generator according to claim 19, wherein the width of the plasma generating portion is 10 mm or more and 300 mm or less.
22. 20. The plasma generation device according to claim 19, wherein at least a portion of the plasma generation unit is made of at least one material selected from the group consisting of aluminum oxide, silicon nitride, silicon nitride, silicon dioxide, yttrium oxide, ceramic, silicon carbide, and combinations thereof.
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