Measurement method and measurement device

Abstract

To provide a measurement method and a measurement device capable of suppressing deterioration in reliability of a display device.SOLUTION: A measurement method comprises: forming a partition wall having a lower portion disposed on a substrate and an upper portion protruding from a side surface of the lower portion; acquiring a plurality of images generated by detecting secondary electrons produced by irradiating the partition wall with an electron beam including primary electrons from a plurality of second directions inclined relative to a first direction perpendicular to the substrate; analyzing the plurality of acquired images; and measuring a first angle representing a ratio of a protrusion amount of an end portion of the upper portion protruding from the side surface of the lower portion to a length of the lower portion in the first direction on the basis of an analysis result.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a measurement method and a measurement apparatus. [Background technology]

[0002] In recent years, display devices that use organic light-emitting diodes (OLEDs) as display elements have been put to practical use.

[0003] The above-described display device is manufactured by preparing a mother substrate on which a plurality of display panels are formed, and then using each of the display panels cut from the mother substrate.

[0004] In the process of manufacturing such a display device, a technique is needed to prevent the reliability of the display device from decreasing. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-195677 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-207217 [Patent Document 3] Japanese Patent Application Laid-Open No. 2008-135325 [Patent Document 4] Japanese Patent Application Laid-Open No. 2009-32673 [Patent Document 5] Japanese Patent Application Laid-Open No. 2010-118191 [Patent Document 6] International Publication No. 2018 / 179308 [Patent Document 7] US Patent Application Publication No. 2022 / 0077251 [Patent Document 8] Japanese Patent Application Laid-Open No. 2013-213733 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a measurement method and a measurement device that can suppress a decrease in the reliability of a display device. [Means for solving the problem]

[0007] A measurement method according to an embodiment includes forming a partition wall having a lower portion disposed on a substrate and an upper portion protruding from a side surface of the lower portion; acquiring a plurality of images generated by detecting secondary electrons generated by irradiating an electron beam including primary electrons toward the partition wall from a plurality of second directions inclined from a first direction perpendicular to the substrate; analyzing the acquired images; and measuring a first angle based on the analysis results to represent the ratio between the amount of protrusion of an end portion of the upper portion from the side surface of the lower portion and the length of the lower portion in the first direction. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a display device according to an embodiment. [Figure 2] FIG. 2 is a diagram showing an example of a layout of sub-pixels. [Figure 3] FIG. 3 is a schematic cross-sectional view of the display device taken along line III-III in FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view of a partition wall. [Figure 5] FIG. 5 is a schematic cross-sectional view for explaining a display element formed by using partition walls. [Figure 6] FIG. 6 is a schematic cross-sectional view for explaining a display element formed by using partition walls. [Figure 7] FIG. 7 is a schematic cross-sectional view for explaining a display element formed by using partition walls. [Figure 8] FIG. 8 is a diagram for explaining the relationship between the protrusion amount of the partition wall and the height of the lower portion. [Figure 9]FIG. 9 is a diagram for explaining a motherboard inspection device used in the manufacturing process of a display device. [Figure 10] FIG. 10 is a diagram for explaining the configuration of the SEM. [Figure 11] FIG. 11 is a diagram for explaining an example of a target angle to be measured in this embodiment. [Figure 12] FIG. 12 is a diagram illustrating an example of a hardware configuration of a measuring device. [Figure 13] FIG. 13 is a diagram illustrating an example of the functional configuration of the measurement device. [Figure 14] FIG. 14 is a flowchart illustrating an example of a processing procedure of the measurement device. [Figure 15] FIG. 15 is a diagram for explaining an example of a process for measuring a target angle. [Figure 16] FIG. 16 is a diagram for explaining an example of a process for measuring a target angle. [Figure 17] FIG. 17 is a diagram for explaining another example of the process of measuring the target angle. [Figure 18] FIG. 18 is a diagram for explaining another example of the process of measuring the target angle. [Figure 19] FIG. 19 is a diagram for explaining another example of the target angle measured in this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] An embodiment will be described with reference to the drawings. The disclosure is merely an example, and appropriate modifications that can be easily conceived by a person skilled in the art while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, in the drawings, the width, thickness, shape, etc. of each part may be schematically shown compared to the actual embodiment for the purpose of clarity, but these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each drawing, components that perform the same or similar functions as those described above with reference to the previous drawings are designated by the same reference numerals, and redundant detailed descriptions may be omitted as appropriate.

[0010] In the drawings, mutually perpendicular X, Y, and Z axes are shown as necessary to facilitate understanding. The direction along the X axis is referred to as direction X, the direction along the Y axis is referred to as direction Y, and the direction along the Z axis is referred to as direction Z. Viewing various elements parallel to direction Z is referred to as planar view.

[0011] The display device in this embodiment is an organic electroluminescence display device that includes organic light-emitting diodes (OLEDs) as display elements (light-emitting elements), and can be installed in televisions, personal computers, in-vehicle devices, tablet terminals, smartphones, mobile phone terminals, and the like.

[0012] 1 is a diagram showing an example of the configuration of a display device DSP according to this embodiment. The display device DSP has a display area DA for displaying an image and a non-display area NDA surrounding the display area DA, on an insulating substrate 10. The substrate 10 may be glass or a flexible resin film.

[0013] In this embodiment, the shape of the substrate 10 in plan view is rectangular. However, the shape of the substrate 10 in plan view is not limited to rectangular, and may be other shapes such as square, circle, or ellipse.

[0014] The display area DA includes a plurality of pixels PX arranged in a matrix in the directions X and Y. Each pixel PX includes a plurality of subpixels SP. For example, the pixel PX includes a red subpixel SP1, a green subpixel SP2, and a blue subpixel SP3. The pixel PX may include subpixels SP of other colors, such as white, in addition to the subpixels SP1, SP2, and SP3. The pixel PX may also include subpixels SP of other colors instead of any of the subpixels SP1, SP2, and SP3.

[0015] The subpixel SP includes a pixel circuit 1 and a display element 20 driven by the pixel circuit 1. The pixel circuit 1 includes a pixel switch 2, a drive transistor 3, and a capacitor 4. The pixel switch 2 and the drive transistor 3 are switching elements formed of, for example, thin film transistors.

[0016] The gate electrode of the pixel switch 2 is connected to the scanning line GL. One of the source electrode and drain electrode of the pixel switch 2 is connected to the signal line SL, and the other is connected to the gate electrode of the drive transistor 3 and the capacitor 4. One of the source electrode and drain electrode of the drive transistor 3 is connected to the power line PL and the capacitor 4, and the other is connected to the display element 20.

[0017] The configuration of the pixel circuit 1 is not limited to the example shown in Fig. 1. The pixel circuit 1 may include, for example, more thin film transistors and capacitors.

[0018] The display elements 20 include organic light-emitting diodes (light-emitting elements). For example, the subpixel SP1 includes a display element 20 that emits light in the red wavelength range, the subpixel SP2 includes a display element 20 that emits light in the green wavelength range, and the subpixel SP3 includes a display element 20 that emits light in the blue wavelength range.

[0019] Note that Figure 1 mainly shows a display panel used in manufacturing a display device DSP, and the display device DSP has a structure in which a circuit board equipped with a driver (driver IC chip) that drives the display panel is connected to the display panel.

[0020] Fig. 2 shows an example of the layout of subpixels SP1, SP2, and SP3. In the example shown in Fig. 2, subpixels SP1 and SP2 are aligned in direction Y. Furthermore, subpixels SP1 and SP2 are aligned in direction X with subpixel SP3.

[0021] 2, the display area DA is formed with columns in which the subpixels SP1 and SP2 are alternately arranged in the direction Y, and columns in which multiple subpixels SP3 are repeatedly arranged in the direction Y. These columns are arranged alternately in the direction X.

[0022] The layout of the subpixels SP1, SP2, and SP3 is not limited to the example shown in Fig. 2. As another example, the subpixels SP1, SP2, and SP3 in each pixel PX may be arranged in order in the X direction.

[0023] Ribs 5 and partition walls 6 are arranged in the display area DA. The ribs 5 have openings AP1, AP2, and AP3 in the subpixels SP1, SP2, and SP3, respectively. In the example shown in Fig. 2, the opening AP2 is larger than the opening AP1, and the opening AP3 is larger than the opening AP2. The partition walls 6 are arranged at the boundaries between adjacent subpixels SP, and overlap with the ribs 5 in a plan view.

[0024] The partitions 6 have a plurality of first partitions 6x extending in the direction X and a plurality of second partitions 6y extending in the direction Y. The first partitions 6x are respectively arranged between the openings AP1 and AP2 adjacent to each other in the direction Y and between the two openings AP3 adjacent to each other in the direction Y. The second partitions 6y are respectively arranged between the openings AP1 and AP3 adjacent to each other in the direction X and between the openings AP2 and AP3 adjacent to each other in the direction X.

[0025] 2, the first partition 6x and the second partition 6y are connected to each other. As a result, the partition 6 as a whole has a lattice shape surrounding the openings AP1, AP2, and AP3. It can also be said that the partition 6 has openings in the subpixels SP1, SP2, and SP3, similar to the rib 5.

[0026] That is, in this embodiment, the ribs 5 and the partition walls 6 are arranged so as to partition the subpixels SP1, SP2, and SP3.

[0027] Subpixel SP1 includes a lower electrode LE1, an upper electrode UE1, and an organic layer OR1, each overlapping with aperture AP1. Subpixel SP2 includes a lower electrode LE2, an upper electrode UE2, and an organic layer OR2, each overlapping with aperture AP2. Subpixel SP3 includes a lower electrode LE3, an upper electrode UE3, and an organic layer OR3, each overlapping with aperture AP3. In the example shown in FIG. 2, the outer shapes of the upper electrode UE1 and the organic layer OR1 are the same, the outer shapes of the upper electrode UE2 and the organic layer OR2 are the same, and the outer shapes of the upper electrode UE3 and the organic layer OR3 are the same.

[0028] The lower electrode LE1, the upper electrode UE1, and the organic layer OR1 constitute the display element 20 of the subpixel SP1. The lower electrode LE2, the upper electrode UE2, and the organic layer OR2 constitute the display element 20 of the subpixel SP2. The lower electrode LE3, the upper electrode UE3, and the organic layer OR3 constitute the display element 20 of the subpixel SP3.

[0029] The lower electrode LE1 is connected to the pixel circuit 1 that drives the subpixel SP1 (display element 20) through a contact hole CH1. The lower electrode LE2 is connected to the pixel circuit 1 that drives the subpixel SP2 (display element 20) through a contact hole CH2. The lower electrode LE3 is connected to the pixel circuit 1 that drives the subpixel SP3 (display element 20) through a contact hole CH3.

[0030] 2, contact holes CH1 and CH2 entirely overlap with the first partition 6x between openings AP1 and AP2 adjacent to each other in direction Y. Contact hole CH3 entirely overlaps with the first partition 6x between two openings AP3 adjacent to each other in direction Y. As another example, at least a portion of contact holes CH1, CH2, and CH3 may not overlap with the first partition 6x.

[0031] 2, the lower electrodes LE1 and LE2 have protrusions PR1 and PR2, respectively. The protrusion PR1 protrudes from the main body of the lower electrode LE1 (the portion overlapping with the opening AP1) toward the contact hole CH1. The protrusion PR2 protrudes from the main body of the lower electrode LE2 (the portion overlapping with the opening AP2) toward the contact hole CH2. The contact holes CH1 and CH2 overlap with the protrusions PR1 and PR2, respectively.

[0032] Fig. 3 is a schematic cross-sectional view of the display device DSP taken along line III-III in Fig. 2. In the display device DSP, an insulating layer 11 called an undercoat layer is disposed on a substrate 10 (on the surface on which the display element 20 and the like are disposed).

[0033] The insulating layer 11 has a three-layer structure including, for example, a silicon oxide film (SiO), a silicon nitride film (SiN), and a silicon oxide film (SiO). Note that the insulating layer 11 is not limited to a three-layer structure, and may have a layer structure of more than three layers, or may have a single-layer structure or a two-layer structure.

[0034] A circuit layer 12 is disposed on the insulating layer 11. The circuit layer 12 has various circuits and wirings for driving the sub-pixels SP (SP1, SP2, and SP3), such as the pixel circuits 1, scanning lines GL, signal lines SL, and power supply lines PL shown in Fig. 1. The circuit layer 12 is covered with an insulating layer 13.

[0035] The insulating layer 13 functions as a planarizing film that flattens unevenness caused by the circuit layer 12. Although not shown in FIG.

[0036] The lower electrodes LE (LE1, LE2, and LE3) are disposed on the insulating layer 13. The ribs 5 are disposed on the insulating layer 13 and the lower electrodes LE. The ends (parts) of the lower electrodes LE are covered by the ribs 5.

[0037] The partition wall 6 has a lower portion 61 disposed on the rib 5 and an upper portion 62 covering the upper surface of the lower portion 61. The upper portion 62 has a width greater than that of the lower portion 61 in the X and Y directions. As a result, the partition wall 6 has a shape in which both ends of the upper portion 62 protrude beyond the side surfaces of the lower portion 61. Such a shape of the partition wall 6 can also be said to be an overhanging shape.

[0038] The organic layers OR (OR1, OR2, and OR3) and the upper electrodes UE (UE1, UE2, and UE3), together with the lower electrodes LE (LE1, LE2, and LE3), constitute the display element 20. As shown in FIG. 3, the organic layer OR1 includes a first organic layer OR1a and a second organic layer OR1b spaced apart from each other. The upper electrode UE1 includes a first upper electrode UE1a and a second upper electrode UE1b spaced apart from each other. The first organic layer OR1a contacts the lower electrode LE1 through the opening AP1 and covers a portion of the rib 5. The second organic layer OR1b is located on the upper portion 62. The first upper electrode UE1a faces the lower electrode LE1 and covers the first organic layer OR1a. Furthermore, the first upper electrode UE1a contacts a side surface of the lower portion 61. The second upper electrode UE1b is located above the partition wall 6 and covers the second organic layer OR1b.

[0039] 3, the organic layer OR2 includes a first organic layer OR2a and a second organic layer OR2b spaced apart from each other. The upper electrode UE2 includes a first upper electrode UE2a and a second upper electrode UE2b spaced apart from each other. The first organic layer OR2a contacts the lower electrode LE2 through the opening AP2 and covers a portion of the rib 5. The second organic layer OR2b is located on the upper portion 62. The first upper electrode UE2a faces the lower electrode LE2 and covers the first organic layer OR2a. Furthermore, the first upper electrode UE2a contacts a side surface of the lower portion 61. The second upper electrode UE2b is located above the partition wall 6 and covers the second organic layer OR2b.

[0040] 3, the organic layer OR3 includes a first organic layer OR3a and a second organic layer OR3b spaced apart from each other. The upper electrode UE3 includes a first upper electrode UE3a and a second upper electrode UE3b spaced apart from each other. The first organic layer OR3a contacts the lower electrode LE3 through the opening AP3 and covers a portion of the rib 5. The second organic layer OR3b is located on the upper portion 62. The first upper electrode UE3a faces the lower electrode LE3 and covers the first organic layer OR3a. Furthermore, the first upper electrode UE3a contacts a side surface of the lower portion 61. The second upper electrode UE3b is located above the partition wall 6 and covers the second organic layer OR3b.

[0041] In the example shown in FIG. 3, the subpixels SP1, SP2 and SP3 include capping layers CP1, CP2 and CP3 for adjusting the optical properties of the light emitted by the light-emitting layers of the organic layers OR1, OR2 and OR3.

[0042] The cap layer CP1 includes a first cap layer CP1a and a second cap layer CP1b spaced apart from each other. The first cap layer CP1a is located in the opening AP1 and is disposed on the first upper electrode UE1a. The second cap layer CP1b is located above the partition wall 6 and is disposed on the second upper electrode UE1b.

[0043] The cap layer CP2 includes a first cap layer CP2a and a second cap layer CP2b spaced apart from each other. The first cap layer CP2a is located in the opening AP2 and is disposed on the first upper electrode UE2a. The second cap layer CP2b is located above the partition wall 6 and is disposed on the second upper electrode UE2b.

[0044] The cap layer CP3 includes a first cap layer CP3a and a second cap layer CP3b spaced apart from each other. The first cap layer CP3a is located in the opening AP3 and is disposed on the first upper electrode UE3a. The second cap layer CP3b is located above the partition wall 6 and is disposed on the second upper electrode UE3b.

[0045] Sealing layers SE1, SE2, and SE3 are disposed in the subpixels SP1, SP2, and SP3, respectively. The sealing layer SE1 continuously covers the components of the subpixel SP1, including the first cap layer CP1a, the partition wall 6, and the second cap layer CP1b. The sealing layer SE2 continuously covers the components of the subpixel SP2, including the first cap layer CP2a, the partition wall 6, and the second cap layer CP2b. The sealing layer SE3 continuously covers the components of the subpixel SP3, including the first cap layer CP3a, the partition wall 6, and the second cap layer CP3b.

[0046] 3, the second organic layer OR1b, the second upper electrode UE1b, the second cap layer CP1b, and the sealing layer SE1 on the partition wall 6 between the subpixels SP1 and SP3 are spaced apart from the second organic layer OR3b, the second upper electrode UE3b, the second cap layer CP3b, and the sealing layer SE3 on the partition wall 6. In addition, the second organic layer OR2b, the second upper electrode UE2b, the second cap layer CP2b, and the sealing layer SE2 on the partition wall 6 between the subpixels SP2 and SP3 are spaced apart from the second organic layer OR3b, the second upper electrode UE3b, the second cap layer CP3b, and the sealing layer SE3 on the partition wall 6.

[0047] The sealing layers SE1, SE2, and SE3 are covered with a resin layer 14. The resin layer 14 is covered with a sealing layer 15. Furthermore, the sealing layer 15 is covered with a resin layer 16.

[0048] The insulating layer 13 and the resin layers 14 and 16 are made of organic materials. The rib 5, the sealing layer 15, and the SEs (SE1, SE2, and SE3) are made of inorganic materials such as silicon nitride (SiNx).

[0049] The lower portion 61 of the partition wall 6 is conductive. The upper portion 62 of the partition wall 6 may also be conductive. The lower electrode LE may be formed of a transparent conductive oxide such as ITO (Indium Tin Oxide), or may have a laminated structure of a metal material such as silver (Ag) and a conductive oxide. The upper electrode UE is formed of a metal material such as a magnesium-silver alloy (MgAg). The upper electrode UE may also be formed of a conductive oxide such as ITO.

[0050] When the potential of the lower electrode LE is relatively higher than the potential of the upper electrode UE, the lower electrode LE corresponds to the anode and the upper electrode UE corresponds to the cathode. When the potential of the upper electrode UE is relatively higher than the potential of the lower electrode LE, the upper electrode UE corresponds to the anode and the lower electrode LE corresponds to the cathode.

[0051] The organic layer OR includes a pair of functional layers and a light-emitting layer disposed between the functional layers. For example, the organic layer OR has a structure in which a hole-injecting layer, a hole-importing layer, an electron-blocking layer, a light-emitting layer, a hole-blocking layer, an electron-transporting layer, and an electron-injecting layer are stacked in this order.

[0052] The cap layer CP (CP1, CP2, and CP3) is formed, for example, by a multilayer structure of multiple transparent thin films. The multiple thin films may include thin films formed from inorganic materials and thin films formed from organic materials. Furthermore, these multiple thin films have different refractive indices. The material of the thin films that make up the multilayer structure is different from the material of the upper electrode UE and also different from the material of the sealing layer SE. The cap layer CP may be omitted.

[0053] A common voltage is supplied to the partition 6. This common voltage is supplied to each of the upper electrodes UE (first upper electrodes UE1a, UE2a, and UE3a) in contact with the side surfaces of the lower portion 61. A pixel voltage is supplied to each of the lower electrodes LE (LE1, LE2, and LE3) through the pixel circuits 1 of the subpixels SP (SP1, SP2, and SP3).

[0054] When a potential difference is created between the lower electrode LE1 and the upper electrode UE1, the light-emitting layer of the first organic layer OR1a emits light in the red wavelength range. When a potential difference is created between the lower electrode LE2 and the upper electrode UE2, the light-emitting layer of the first organic layer OR2a emits light in the green wavelength range. When a potential difference is created between the lower electrode LE3 and the upper electrode UE3, the light-emitting layer of the first organic layer OR3a emits light in the blue wavelength range.

[0055] As another example, the light-emitting layers of the organic layers OR1, OR2, and OR3 may emit light of the same color (e.g., white). In this case, the display device DSP may include color filters that convert the light emitted by the light-emitting layers into light of the colors corresponding to the subpixels SP1, SP2, and SP3. The display device DSP may also include a layer containing quantum dots that are excited by the light emitted by the light-emitting layers to generate light of the colors corresponding to the subpixels SP1, SP2, and SP3.

[0056] 4 is a schematic enlarged cross-sectional view of the partition wall 6. Elements other than the rib 5, the partition wall 6, the insulating layer 13, and the pair of lower electrodes LE are omitted in FIG. 4. The pair of lower electrodes LE correspond to any one of the lower electrodes LE1, LE2, and LE3 described above. The first partition wall 6x and the second partition wall 6y have the same structure as the partition wall 6 shown in FIG. 4.

[0057] In the example shown in FIG. 4 , the lower portion 61 of the partition wall 6 includes a barrier layer 611 disposed on the rib 5 and a metal layer 612 disposed on the barrier layer 611. The barrier layer 611 corresponds to the bottom portion of the lower portion 61 and is formed of a metal material such as molybdenum. The metal layer 612 is formed of a metal material different from that of the barrier layer 611 and is thicker than the barrier layer 611. The metal layer 612 may have a single-layer structure or a laminated structure of different metal materials. As an example, the metal layer 612 is formed of, for example, aluminum (Al).

[0058] The upper portion 62 is thinner than the lower portion 61. In the example shown in FIG. 4, the upper portion 62 includes a lower layer 621 disposed on the metal layer 612 and an upper layer 622 disposed on the lower layer 621. As an example, the lower layer 621 is formed of, for example, titanium (Ti), and the upper layer 622 is formed of, for example, ITO. Here, the upper portion 62 has been described as having a two-layer laminated structure, but the upper portion 62 may have a single-layer structure formed of, for example, a metal material such as titanium. Furthermore, the upper portion 62 may be made of a material other than a metal, and may be made of an inorganic material such as silicon oxide (SiO). Furthermore, the upper portion 62 may be made of an appropriate combination of the above-mentioned conductive oxides such as ITO, metal materials such as titanium, and inorganic materials such as silicon oxide, or may be a single layer made of any of the above-mentioned materials.

[0059] 4, the width of the lower portion 61 decreases toward the upper portion 62. That is, the side surfaces 61a and 61b of the lower portion 61 are inclined with respect to the direction Z. The upper portion 62 has an end portion 62a protruding from the side surface 61a and an end portion 62b protruding from the side surface 61b.

[0060] The amount D by which the ends 62a and 62b protrude from the side surfaces 61a and 61b (hereinafter referred to as the protrusion amount D of the partition wall 6) is, for example, 2.0 μm or less. The protrusion amount D of the partition wall 6 in this embodiment corresponds to the length (distance) in the width direction (direction X or direction Y) orthogonal to direction Z of the partition wall 6 between the lower ends of the side surfaces 61a and 61b (the ends of the side surfaces of the barrier layer 611 on the substrate 10 side) and the ends 62a and 62b.

[0061] 4, the side surfaces of the barrier layer 611 and the metal layer 612 are aligned to form a flat surface without any steps, but for example, the side surfaces of the barrier layer 611 may be slightly recessed from the side surfaces of the metal layer 612 or may protrude from the side surfaces of the metal layer 612. Also, in FIG. 4, the side surfaces of the barrier layer 611 and the metal layer 612 (i.e., the side surfaces 61a and 61b of the lower portion 61) are inclined with respect to the direction Z, but the side surfaces may be parallel to the direction Z.

[0062] The structure of the partition walls 6 and the materials of the respective portions of the partition walls 6 can be appropriately selected in consideration of, for example, the method of forming the partition walls 6 and the like.

[0063] In this embodiment, the partition walls 6 are formed so as to separate the sub-pixels SP in a plan view. The organic layers OR are formed by, for example, an anisotropic or directional vacuum deposition method. When an organic material for forming the organic layers OR is deposited over the entire substrate 10 with the partition walls 6 in place, the organic layers OR are hardly formed on the side surfaces of the partition walls 6 because the partition walls 6 have the shapes shown in Figures 3 and 4. This allows the formation of organic layers OR (display elements 20) that are separated into sub-pixels SP by the partition walls 6.

[0064] 5 to 7 are schematic cross-sectional views illustrating a display element 20 formed using the partition walls 6. The subpixels SPα, SPβ, and SPγ shown in these Figs. 5 to 7 correspond to any of the subpixels SP1, SP2, and SP3.

[0065] With the partition wall 6 disposed as described above, the organic layer OR, upper electrode UE, cap layer CP, and sealing layer SE are sequentially formed by vapor deposition on the entire substrate 10 as shown in FIG. 5 . The organic layer OR includes an emissive layer that emits light of a color corresponding to the subpixel SPα. The overhanging partition wall 6 divides the organic layer OR into a first organic layer ORa covering the lower electrode LE and a second organic layer ORb on the partition wall 6. The upper electrode UE is divided into a first upper electrode UEa covering the first organic layer ORa and a second upper electrode UEb covering the second organic layer ORb. The cap layer CP is divided into a first cap layer CPa covering the first upper electrode UEa and a second cap layer CPb covering the second upper electrode UEb. The first upper electrode UEa is in contact with the lower portion 61 of the partition wall 6. The sealing layer SE continuously covers the first cap layer CPa, the partition wall 6, and the second cap layer CPb.

[0066] Next, as shown in FIG. 6, a resist R is formed on the sealing layer SE. The resist R covers the subpixel SPα. That is, the resist R is disposed directly on the first organic layer ORa, the first upper electrode UEa, and the first cap layer CPa located in the subpixel SPα. The resist R is also disposed directly on the second organic layer ORb, the second upper electrode UEb, and the second cap layer CPb on the partition wall 6 between the subpixels SPα and SPβ, that are closer to the subpixel SPα. That is, at least a part of the partition wall 6 is exposed from the resist R.

[0067] 7, etching is performed using the resist R as a mask to remove the organic layer OR, the upper electrode UE, the cap layer CP, and the sealing layer SE that are exposed from the resist R. As a result, a display element 20 including the lower electrode LE, the first organic layer ORa, the first upper electrode UEa, and the first cap layer CPa is formed in the subpixel SPα. Meanwhile, the lower electrode LE is exposed in the subpixels SPβ and SPγ. Note that the above-mentioned etching includes, for example, dry etching of the sealing layer SE, wet etching and dry etching of the cap layer CP, wet etching of the upper electrode UE, and dry etching of the organic layer OR.

[0068] After the display element 20 of the subpixel SPα is formed as described above, the resist R is removed, and the display elements 20 of the subpixels SPβ and SPγ are formed in sequence in the same manner as the subpixel SPα.

[0069] As illustrated above for the subpixels SPα, SPβ, and SPγ, display elements 20 for subpixels SP1, SP2, and SP3 are formed, and then resin layer 14, sealing layer 15, and resin layer 16 are formed, thereby realizing the structure of the display device DSP shown in Figure 3.

[0070] Here, as described above, the partition 6 has a lower portion 61 and an upper portion 62 protruding from the side of the lower portion 61, but if the protrusion amount D (eaves width) of the partition 6 is not appropriate, the reliability of the display device DSP may be reduced.

[0071] Specifically, in the display device DSP, the organic layer OR is divided into subpixels SP by the partition wall 6, and if the protrusion amount D (overhang width) of the partition wall 6 is not sufficiently larger than the design value, the organic layer OR may not be properly divided. Also, if the side surface of the lower portion 61 of the partition wall 6 is covered with the organic layer OR, the electrical connection between the lower portion 61 and the upper electrode UE is obstructed. Meanwhile, in the display device DSP, the upper electrode UE needs to be in contact with the side surface of the lower portion 61 of the partition wall 6, but if the protrusion amount D of the partition wall 6 exceeds the design value, the upper electrode UE may not be in contact with the side surface of the lower portion 61.

[0072] Furthermore, the above-mentioned appropriate division of the organic layer OR and the electrical connection between the lower portion 61 and the upper electrode UE also depend on the length of the lower portion 61 in the direction Z (that is, the height of the lower portion 61).

[0073] Specifically, if the height of the lower portion 61 is higher than necessary relative to the protrusion amount D of the partition wall 6, the side surface of the lower portion 61 may be covered with the organic layer OR, which may hinder the electrical connection between the lower portion 61 and the upper electrode UE. Also, if the height of the lower portion 61 is not sufficient relative to the protrusion amount D of the partition wall 6, it may not be possible to properly divide the organic layer OR.

[0074] That is, in the present embodiment, the deposition amount of the organic layer OR (organic semiconductor film) or the upper electrode UE (cathode film) on the lower portion 61 (bottom portion) below the upper portion 62 (eaves) during vapor deposition is determined by the protrusion amount D of the partition wall 6 shown in FIG. 8 (the length from the side surface of the lower portion 61 to the end portion of the upper portion 62 in the direction X or the direction Y) and the height h of the lower portion 61.

[0075] Therefore, in order to manufacture a highly reliable display device DSP that can achieve appropriate separation of the organic layer OR and electrical connection between the lower part 61 and the upper electrode UE, it is useful to measure and manage the protrusion amount D of the partition wall 6 and the height h of the lower part 61 during the manufacturing process of the display device DSP.

[0076] However, in general, in the manufacturing process of a display device DSP, a mother substrate is manufactured in which a plurality of display panels are formed on a mother substrate including a plurality of base materials 10, and the display device DSP is manufactured using each of the display panels cut from the mother substrate. However, in order to measure and manage the protrusion amount D of the partition wall 6 and the height h of the lower part 61, it is necessary to cut the mother substrate and observe the cross section of the partition wall 6, which is inefficient.

[0077] In the manufacturing process of the above-mentioned display device DSP, as shown in FIG. 9, the mother substrate (array substrate) 100 is inserted into a mother substrate inspection device 300 maintained in a vacuum state via a load lock chamber 200, and the quality of the mother substrate 100 is inspected in the mother substrate inspection device 300.

[0078] In this case, the motherboard inspection device 300 is equipped with, for example, a scanning electron microscope (SEM), and the motherboard inspection device 300 can perform component (element) analysis of the motherboard 100 using EDX (energy dispersive X-ray spectroscopy) attached to the SEM.

[0079] For this reason, in this embodiment, it is considered that the SEM mounted on the motherboard inspection device 300 described above is used to inspect the partition walls 6 formed on the base material 10.

[0080] Here, the configuration of the above-mentioned SEM will be briefly described with reference to Fig. 10. As shown in Fig. 10, the SEM 400 includes a sample stage 401, an illuminator 402, and a detector 403. The illuminator 402 includes an electron gun 402a, a focusing lens 402b, a scanning coil 402c, and an objective lens 402d.

[0081] The electron gun 402a generates an electron beam. The focusing lens 402b and the objective lens 402d focus the electron beam onto an electron spot on a sample (here, the motherboard 100) placed on the sample stage 401. This allows the irradiator 402 to irradiate the sample with an electron beam 404 containing primary electrons. The scanning coil 402c scans (moves) the electron spot (i.e., the irradiation point of the electron beam 404) onto the sample, where the electron beam is focused. As a result, secondary electrons are generated from each irradiation point of the electron beam 404 scanned on the sample, and the generated secondary electrons are detected by the detector 403. The SEM 400 can generate an image of the sample (hereinafter referred to as an SEM image) based on the secondary electrons (i.e., the detection data) detected by the detector 403. Note that the amount of secondary electrons generated varies depending on the uneven structure of the sample surface, so an SEM image can be said to be an image including the surface shape of the sample. It is known that SEM images have higher resolution than images captured by, for example, an optical microscope.

[0082] Here, it is assumed that the protrusion amount D of the partition wall 6 and the height h of the lower portion 61 are measured using the above-described SEM 400. In this case, if the electron beam 404 is irradiated toward the partition wall 6 from, for example, direction Z (i.e., a direction perpendicular to the substrate 10), the upper portion 62 of the partition wall 6 has a width greater than that of the lower portion 61 (i.e., the partition wall 6 has an overhanging shape), and therefore an SEM image including the surface shape of the upper surface (surface on the Z direction side) of the upper portion 62 is generated, and the protrusion amount D of the partition wall 6 and the height h of the lower portion 61 cannot be measured from the SEM image. In other words, when the electron beam 404 is irradiated toward the partition wall 6 from direction Z, for example, only the length of the upper portion 62 of the partition wall 6 in direction X or direction Y can be measured.

[0083] Furthermore, even if the electron beam 404 is irradiated from the surface (i.e., the back surface) opposite to the surface on which the display element 20, etc. of the substrate 10 (mother substrate 100) is arranged, only an SEM image including the surface shape of the back surface of the substrate 10 is generated, and the protrusion amount D of the partition 6 and the height h of the lower portion 61 cannot be measured.

[0084] As described above, the amount of film deposited on the lower portion 61 of the organic layer OR or the upper electrode UE, which affects the reliability of the display device DSP, is determined by the protrusion amount D of the partition wall 6 and the height h of the lower portion 61. However, in order to suppress a decrease in the reliability, the ratio between the protrusion amount D of the partition wall 6 and the height h of the lower portion 61 (i.e., D / h) is important, and it is not necessarily necessary to measure the absolute values of the protrusion amount D of the partition wall 6 and the height h of the lower portion 61.

[0085] From this perspective, tan θ, which is expressed using the angle θ inclined from the direction Z shown in Fig. 11, corresponds to the ratio (D / h) of the protrusion amount D of the partition wall 6 to the height h of the lower portion 61. The angle θ is the angle formed with respect to the direction Z by a straight line passing through the lower end of the side surface of the lower portion 61 (the boundary between the rib 5 and the lower portion 61) and the end portion of the upper portion 62.

[0086] Therefore, in this embodiment, an angle θ (hereinafter referred to as the target angle θ) representing the ratio between the protrusion amount D of the partition 6 and the height h (length in the Z direction) of the lower portion 61 is measured using an SEM image generated by detecting secondary electrons generated by irradiating an electron beam including primary electrons toward the partition 6 from an oblique direction inclined from the direction Z perpendicular to the substrate 10.

[0087] In this embodiment, it is assumed that the target angle θ is measured by a measuring device that is communicably connected to the SEM 400 mounted on the motherboard inspection device 300 described above, but the measuring device may be realized as a part of the motherboard inspection device 300, or may be realized as a device separate from the motherboard inspection device 300. Furthermore, the measuring device may be realized as an integrated part of the SEM 400.

[0088] The measurement device according to this embodiment will be described below. Fig. 12 shows an example of the hardware configuration of the measurement device.

[0089] The measuring device 500 shown in FIG. 12 is realized by, for example, a personal computer, and includes a CPU 500a, a nonvolatile memory 500b, a main memory 500c, and a communication device 500d.

[0090] The CPU 500a is a processor for controlling the operation of the measuring device 500, and executes various programs loaded from the nonvolatile memory 500b to the main memory 500c. The communication device 500d executes communication between the measuring device 500 and an external device (e.g., the SEM 400, etc.).

[0091] 13 shows an example of the functional configuration of the measurement device 500. As shown in FIG. 13, the measurement device 500 includes an image acquisition unit 501, an image analysis unit 502, and a measurement unit 503.

[0092] Note that some or all of the units 501 to 503 included in the measuring device 500 are realized, for example, by the above-mentioned CPU 500a (i.e., the computer of the measuring device 500) executing a predetermined program (i.e., software), but they may also be realized by hardware such as an IC (Integrated Circuit), or by a combination of software and hardware.

[0093] In this embodiment, the measuring device 500 is communicably connected to the SEM 400, and the image acquiring unit 501 acquires the SEM image generated by the SEM 400 from the SEM 400 as described above. The image analyzing unit 502 analyzes the SEM image acquired by the image acquiring unit 501. The measuring unit 503 measures the target angle θ (an angle representing the ratio between the protrusion amount D of the partition wall 6 and the height of the lower portion 61) based on the analysis result by the image analyzing unit 502.

[0094] An example of the processing procedure of the measuring device 500 according to this embodiment will be described below with reference to the flowchart of FIG.

[0095] First, a mother substrate 100 is manufactured by forming an insulating layer 11, a circuit layer 12, an insulating layer 13, a lower electrode LE, a rib 5, and a partition wall 6 on a mother substrate including a plurality of base materials 10. Then, the mother substrate 100 is inserted into a mother substrate inspection device 300 via a load lock chamber 200 shown in FIG. 9. In the mother substrate inspection device 300, an SEM 400 generates an SEM image and outputs the SEM image to a measurement device 500.

[0096] Generally, an electron beam is irradiated onto a sample from a direction perpendicular to the sample. However, in this embodiment, the SEM 400 has a tilt function that enables the electron beam 404 to be irradiated onto the mother substrate 100 (substrate 10) from an oblique direction. The tilt function is realized, for example, by mounting a deflection coil on the irradiator 402 provided in the SEM 400 and generating a magnetic field (magnetic field) using the deflection coil to change the direction of the electron beam 404 irradiated onto (incident on) the mother substrate 100 (i.e., deflecting the electron beam 404). Note that the tilt function may be any function that enables the electron beam 404 to be incident on the mother substrate 100 (the partition wall 6 formed thereon) from an oblique direction. Specifically, the tilt function may be realized, for example, by tilting the direction of the irradiator 402 provided in the SEM 400, or by tilting the sample stage 401 (the mother substrate 100 placed thereon).

[0097] In this embodiment, the electron beam 404 is irradiated toward the partition 6 while sequentially changing its direction (i.e., its angle with respect to the Z direction) by the tilt function described above. As a result, the SEM 400 outputs to the measuring device 500 a plurality of SEM images generated by detecting secondary electrons generated by irradiating the electron beam 404, including primary electrons, toward the partition 6 from a plurality of oblique directions inclined from a direction perpendicular to the mother substrate 100 (base material 10) (i.e., the Z direction). In other words, in this embodiment, the plurality of SEM images output from the SEM 400 to the measuring device 500 are images including the partition 6 (lower part 61 and upper part 62) observed from different angles.

[0098] The angle at which the electron beam 404 is irradiated may be changed manually or automatically based on a preset value or the like.

[0099] In addition, the SEM 400 grasps the angle of the electron beam 404 irradiated onto the mother substrate 100 (substrate 10) using, for example, a tilt function (the angle formed by the irradiation direction of the electron beam 404 with respect to direction Z), and each SEM image output from the SEM 400 to the measurement device 500 is assumed to have the angle of the electron beam 404 irradiated when the SEM image was generated added to it.

[0100] Furthermore, although the SEM image (image file) in this embodiment is assumed to be in a file format such as jpeg, it may be in a file format of another type.

[0101] As described above, a plurality of SEM images output from the SEM 400 are acquired by the image acquisition unit 501 included in the measurement device 500 (step S1).

[0102] Next, the image analysis unit 502 analyzes each of the SEM images acquired in step S1 (step S2).

[0103] Each of the SEM images acquired in step S1 is composed of a plurality of pixels, and each of the pixels holds a brightness value (pixel value) for displaying the SEM image. In this case, in step S2, a process is executed to identify the region occupied by the lower portion 61, the region occupied by the upper portion 62, the region occupied by the rib 5, and the like, included in the SEM image, based on the brightness values held by each of the plurality of pixels constituting each of the SEM images. In other words, in step S2, by analyzing each of the SEM images, it is possible to identify whether or not each of the lower portion 61, the upper portion 62, and the rib 5 (the region occupied by each of them) is included in the SEM image.

[0104] When the process of step S2 is executed, the measurement unit 503 measures the target angle θ based on the analysis results of each SEM image in step S2 (step S3).

[0105] An example of the processing of step S3 will be described below. First, Fig. 15 shows an example of the electron beam 404 irradiated when the above-mentioned SEM image is generated. In the example shown in Fig. 15, for example, an electron beam 404a irradiated from a direction forming a first angle θ1 with respect to the direction Z, and an electron beam 404b irradiated from a direction forming a second angle θ2 with respect to the direction Z that is larger than the first angle θ1 are shown.

[0106] 16 shows an example of an SEM image generated by irradiation with the above-described electron beams 404a and 404b. Note that the SEM image in this embodiment includes at least the end portion (e.g., end portion 62b) of the upper portion 62 as shown in FIG.

[0107] 16 is an SEM image generated by irradiation with the electron beam 404a, and includes an area 701a occupied by the upper portion 62 (the surface opposite to the substrate 10) and an area 701b occupied by the rib 5. In other words, the SEM image 701 does not include an area occupied by the lower portion 61. Note that a first angle θ1 is added to the SEM image 701.

[0108] 16 is an SEM image generated by irradiation with the electron beam 404b, and includes a region 702a occupied by the upper portion 62 (the surface opposite to the substrate 10), a region 702b occupied by the metal layer 612 included in the lower portion 61, a region 702c occupied by the barrier layer 611 included in the lower portion 61, and a region 702d occupied by the rib 5. Note that a second angle θ2 is added to the SEM image 702.

[0109] Here, the target angle θ to be measured in this embodiment is the irradiation angle of the electron beam 404 at which an SEM image is generated in which, for example, the end of the upper part 62 and the lower end of the side of the lower part 61 (the end on the substrate 10 side) overlap, as shown in Figure 11 above.

[0110] In contrast, since the SEM image 701 includes only the area 701a occupied by the upper portion 62 and the area 701b occupied by the rib 5 (i.e., does not include the area occupied by the lower portion 61), the target angle θ is estimated to be greater than the first angle θ1 added to the SEM image 701.

[0111] On the other hand, since the SEM image 702 includes the region 702a occupied by the upper portion 62, the region 702b occupied by the barrier layer 611, the region 702c occupied by the metal layer 612, and the region 702d occupied by the rib 5, the target angle θ is an angle smaller than the second angle θ2 added to the SEM image 702.

[0112] According to such SEM images 701 and 702, in step S3, for example, an angle larger than the first angle θ1 and smaller than the second angle θ2 can be measured as the target angle θ.

[0113] That is, in this embodiment, for example, when an SEM image 701 generated by irradiating an electron beam 404a toward the partition wall 6 from a direction that forms a first angle θ1 with respect to the direction Z is analyzed to determine that the SEM image 701 does not include the side of the lower portion 61, and when an SEM image 702 generated by irradiating an electron beam 404b toward the partition wall 6 from a direction that forms a second angle θ2 that is larger than the first angle θ1 with respect to the direction Z is analyzed to determine that the SEM image 702 includes the side of the lower portion 61, an angle that is larger than the first angle θ1 and smaller than the second angle θ2 can be measured as the target angle θ.

[0114] In Figure 16, for the sake of convenience, only two SEM images 701 and 702 are described, and therefore the angle measured as the target angle θ (an angle larger than the first angle θ1 and smaller than the second angle θ2) may differ from the target angle θ (i.e., there may be a large error); however, it is believed that the target angle θ can be measured with higher accuracy by irradiating the electron beam 404 (obtaining SEM images) while changing the angle more finely.

[0115] Although the measurement of the target angle θ has been described above as being greater than the first angle θ1 and smaller than the second angle θ2, it is assumed that an SEM image is generated by sequentially irradiating electron beams 404a, 404c, and 404b shown in Fig. 17. It is assumed that the electron beam 404a is irradiated from a direction that forms a first angle θ1 with respect to the direction Z, the electron beam 404c is irradiated from a direction that forms a third angle θ3 with respect to the direction Z, and the electron beam 404b is irradiated from a direction that forms a second angle θ2 with respect to the direction Z. It is assumed that the third angle θ3 is greater than the first angle θ1 and smaller than the second angle θ2.

[0116] 18 shows an example of an SEM image generated by sequentially irradiating the above-mentioned electron beams 404a, 404c, and 404b. Note that the SEM image 701 generated by irradiating the electron beam 404a and the SEM image 702 generated by irradiating the electron beam 404b are the same as those described in FIG. 16, and therefore detailed description thereof will be omitted here.

[0117] 18 is an SEM image generated by irradiation with an electron beam 404c, and includes a region 703a occupied by the upper portion 62 (the surface opposite to the substrate 10), a region 703b occupied by the barrier layer 611 included in the lower portion 61, and a region 703c occupied by the rib 5. A third angle θ3 is added to the SEM image 703.

[0118] Assuming that SEM images 701, 703, and 702 are generated (acquired) by irradiating electron beams 404a, 404c, and 404b while changing the angle in the order of the first angle θ1, the third angle θ3, and the second angle θ2 as described above, an area 703b included in SEM image 703 has a thin rectangular shape, and it can be said that this SEM image 703 is an SEM image at the timing when the side surface of the lower portion 61 (barrier layer 611) appears. Note that the SEM image at the timing when the side surface of the lower portion 61 appears corresponds to an SEM image generated by irradiating the electron beam 404 from an angle (direction) that is larger than the target angle θ, which is the angle of the electron beam 404 at which an SEM image is generated in which the end of the upper portion 62 and the lower end of the side surface of the lower portion 61 overlap, but has a small error from the target angle θ.

[0119] Therefore, in this embodiment, the irradiation angle of the electron beam 404 when an SEM image is generated at the timing when the side surface of the lower portion 61 appears, such as the SEM image 703 shown in Figure 18 (hereinafter referred to as the angle at the time of appearance of the lower portion 61), may be measured as the target angle θ.

[0120] Here, it is assumed that the angle of the electron beam 404 is gradually changed from the first angle θ1 to the second angle θ2, and therefore the angle at which the lower portion 61 appears is measured as the target angle θ. However, if the angle is gradually changed from the second angle θ2 to the first angle θ1, the irradiation angle of the electron beam 404 when the SEM image at the time when the side of the lower portion 61 disappears (hereinafter referred to as the angle at the time when the lower portion 61 disappears) may be measured as the target angle θ.

[0121] The measurement process of the target angle θ described here is one example, and in this embodiment, other measurement processes may be performed as long as the target angle θ is measured by analyzing multiple SEMs generated by irradiating the electron beam 404 from different angles.

[0122] When the target angle θ (i.e., tan θ corresponding to the ratio between the protrusion amount D of the partition 6 and the height h of the lower portion 61) measured by executing the process shown in Figure 14 described above is appropriate, the display element 20 of each sub-pixel SP can be formed on the mother substrate 100 as described in Figures 5 to 7 above.

[0123] Although the above-described FIG. 14 describes the case where the target angle θ is measured in a portion of the partition wall 6 formed on the mother substrate 100, the process shown in FIG. 14 may be performed multiple times to measure the target angle θ in multiple portions of the partition wall 6.

[0124] As described above, in this embodiment, a partition 6 is formed having a lower portion 61 arranged on a substrate 10 (mother substrate) and an upper portion 62 protruding from the side of the lower portion 61, and a plurality of SEM images are acquired by detecting secondary electrons generated by irradiating an electron beam 404 including primary electrons toward the partition 6 from a plurality of oblique directions (second directions) inclined from the Z direction (first direction) perpendicular to the substrate 10, and the acquired plurality of SEM images are analyzed, and the target angle θ (a first angle representing the ratio between the protrusion amount D of the end of the upper portion 62 protruding from the side of the lower portion 61 and the length of the lower portion 61 in the Z direction) is measured based on the analysis results.

[0125] In this embodiment, the above-described configuration makes it possible to manufacture a display device DSP in which the ratio between the protrusion amount D of the partition 6 and the height h of the lower portion 61 is appropriate (i.e., the partition 6 is appropriately formed), thereby making it possible to suppress a decrease in the reliability of the display device DSP.

[0126] Furthermore, in this embodiment, the target angle θ is measured using the SEM 400 mounted on the motherboard inspection device 300 used to inspect the quality of the motherboard 100, so that continuous inspection can be realized using existing equipment.

[0127] In this embodiment, each of the multiple SEM images includes the end of the upper part 62, and it is preferable that the target angle θ coincides with the irradiation angle of the electron beam 404 (i.e., the angle that the direction in which the electron beam 404 is irradiated makes with the direction Z) so that an SEM image is generated in which the end of the upper part 62 and the end of the side of the lower part 61 on the substrate 10 side (i.e., the lower end) overlap.

[0128] In this case, in this embodiment, as described in Figures 15 and 16, for example, an SEM image 701 generated by irradiating with electron beam 404a and an SEM image 702 generated by irradiating with electron beam 404b are obtained, and if it is determined that the SEM image 701 does not include the side of the lower part 61 (the area occupied by it) and if it is determined that the SEM image 702 includes the side of the lower part 61 (the areas 702b and 702c occupied by it), then an angle greater than the first angle θ1 (second angle) and smaller than the second angle θ2 (third angle) can be measured as the target angle θ.

[0129] In this embodiment, among the multiple SEM images generated by irradiating the electron beam 404 toward the partition wall 6 from multiple oblique directions while sequentially changing the angle as described above, the angle that the oblique direction in which the electron beam 404 is irradiated makes with the direction Z when an SEM image (first image) at the timing when the side of the lower portion 61 appears or an SEM image (second image) at the timing when the side of the lower portion 61 disappears may be measured as the target angle θ (i.e., the angle at the time when the lower portion 61 appears or disappears).

[0130] In the present embodiment, it is assumed that the target angle θ measured as described above is output (transmitted or displayed, etc.) from the measurement device 500 to present the target angle θ (or tan θ) to a manager or the like of the manufacturing process of the display device DSP. However, the measurement device 500 may have a function (hereinafter referred to as a determination function) to automatically determine whether the partition 6 is properly formed based on the target angle θ (or tan θ). According to this determination function, if the target angle θ is within a predetermined range, it is determined that the partition 6 is properly formed. Note that if it is determined that the partition 6 is properly formed, the display element 20 (organic layer OR, upper electrode UE, etc.) of each subpixel SP may be formed as described above.

[0131] In this embodiment, as described in FIG. 4, the side surface of the barrier layer 611 (first layer) and the side surface of the metal layer 612 (second layer) are aligned and form a flat surface without any steps. However, when a partition wall 6 is formed in which the side surface of the barrier layer 611 protrudes relative to the side surface of the metal layer 612 as shown in FIG. 19, for example, a target angle θ (hereinafter referred to as a first target angle θ) may be measured to represent the ratio of the amount of protrusion D1 of the end of the upper part 62 protruding from the side surface (the end surface on the substrate 10 side) of the barrier layer 611 to the height h1 of the lower part 61 (the barrier layer 611 and the metal layer 612), or a target angle θ (hereinafter referred to as a second target angle θ) may be measured to represent the ratio of the amount of protrusion D2 of the end of the upper part 62 protruding from the side surface (the end surface on the substrate 10 side) of the metal layer 612 to the height h2 of the metal layer 612.

[0132] In this embodiment, it is sufficient to measure at least one of the first and second target angles θ, but if both the first and second target angles θ are measured, it is possible to manufacture a display device DSP in which both the first and second target angles θ are appropriate (i.e., a more reliable display device DSP).

[0133] In addition, when both the first and second target angles θ are measured in a configuration in which the measurement device 500 according to this embodiment has the above-described determination function, it is determined that the partition 6 is appropriately formed when the first target angle θ is within a predetermined first range and the second target angle θ is within a predetermined second range (i.e., both the first and second target angles θ are appropriate). However, it may also be determined that the partition 6 is appropriately formed when, for example, the first target angle θ is within the first range or the second target angle θ is within the second range (i.e., at least one of the first and second target angles θ is appropriate). In this case, the first and second ranges may be different ranges or the same range.

[0134] All measurement methods and measurement devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the measurement methods and measurement devices described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0135] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications, and these modifications are also understood to fall within the scope of the present invention. For example, even if a person skilled in the art appropriately adds or deletes components or modifies the design of the above-described embodiment, or adds or omits steps or modifies conditions, these modifications are also included within the scope of the present invention as long as they maintain the gist of the present invention.

[0136] Furthermore, with regard to other effects brought about by the aspects described in the above embodiments, those that are clear from the description in this specification or that can be appropriately thought of by a person skilled in the art are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0137] DSP...display device, DA...display area, NDA...non-display area, PX...pixel, SP, SP1, SP2, SP3...subpixel, LE, LE1, LE2, LE3...lower electrode, UE, UE1, UE2, UE3...upper electrode, OR, OR1, OR2, OR3...organic layer, SE, SE1, SE2, SE3...sealing layer, 1...pixel circuit, 2...pixel switch, 3...drive transistor, 4...capacitor, 5...rib, 6...partition wall, 10...substrate, 11...insulating layer, 12...circuit layer, 13...insulating layer, 14...resin layer, 15...sealing layer, 16...resin layer, 2 0...display element, 61...lower part, 62...upper part, 100...motherboard, 200...load lock chamber, 300...motherboard inspection device, 400...SEM (scanning electron microscope), 401...sample stage, 402...irradiator, 402a...electron gun, 402b...focusing lens, 402c...scanning coil, 402d...objective lens, 403...detector, 500...measuring device, 500a...CPU, 500b...non-volatile memory, 500c...main memory, 500d...communication device, 501...image acquisition unit, 502...image analysis unit, 503...measurement unit.

Claims

1. forming a partition wall having a lower portion disposed on a substrate and an upper portion protruding from a side surface of the lower portion; acquiring a plurality of images generated by detecting secondary electrons generated by irradiating an electron beam including primary electrons toward the partition wall from a plurality of second directions inclined from a first direction perpendicular to the substrate; analyzing the acquired images; measuring a first angle representing a ratio of a protrusion amount of an end portion of the upper portion from a side surface of the lower portion to a length of the lower portion in the first direction based on the analysis result; A measurement method comprising:

2. The measurement method according to claim 1 , wherein each of the plurality of images includes an edge of the upper portion.

3. the acquiring includes acquiring a first image generated by detecting secondary electrons generated by irradiating the electron beam toward the partition wall from a second direction that forms a second angle with respect to the first direction, and acquiring a second image generated by detecting secondary electrons generated by irradiating the electron beam toward the partition wall from a second direction that forms a third angle with respect to the first direction that is larger than the second angle, The measuring includes measuring, when the first image is analyzed to determine that the side surface of the lower part is not included in the first image and the second image is analyzed to determine that the second image includes the side surface of the lower part, an angle that is greater than the second angle and smaller than the third angle as a first angle. The measuring method according to claim 2.

4. the electron beam is irradiated toward the partition wall from a second direction forming the angle with respect to the first direction while the angle with respect to the first direction is sequentially changed; The measuring includes measuring, as the first angle, an angle formed by a second direction in which the electron beam is irradiated with respect to the first direction when a first image at a timing when the side surface of the lower portion appears or a second image at a timing when the side surface of the lower portion disappears from the plurality of images is generated by analyzing each of the plurality of images. The measuring method according to claim 2.

5. the lower portion includes a first layer disposed on the substrate and a second layer disposed on the first layer; The measuring step includes measuring a first angle based on the analysis result to represent at least one of a ratio between a protrusion amount of the end portion of the upper portion from a side surface of the first layer and a length of the first and second layers in the first direction, and a ratio between a protrusion amount of the end portion of the upper portion from a side surface of the second layer and a length of the second layer in the first direction. The measurement method according to claim 1.

6. 6. The measurement method according to claim 5, wherein the first and second layers are formed of different metallic materials.

7. 7. The measurement method according to claim 1, further comprising determining whether the partition walls are properly formed based on the measured first angle.

8. forming a lower electrode on the substrate; forming a rib covering a portion of the lower electrode and having an opening overlapping the lower electrode; Further comprising: The partition wall is formed on the rib. The measuring method according to claim 7.

9. forming an organic layer in contact with the lower electrode through the opening if it is determined that the partition wall is properly formed; forming an upper electrode on the organic layer; The measurement method of claim 8 further comprising:

10. an acquisition unit that acquires a plurality of images generated by detecting secondary electrons generated by irradiating an electron beam including primary electrons toward the partition wall from a plurality of second directions inclined from a first direction perpendicular to a base member on which a partition wall having a lower portion and an upper portion protruding from a side surface of the lower portion is formed; an analysis unit that analyzes the acquired images; a measurement unit that measures a first angle representing a ratio of a protrusion amount of an end portion of the upper portion from a side surface of the lower portion to a length of the lower portion in the first direction based on the analysis result; and A measuring device comprising:

11. The measurement device of claim 10 , wherein each of the plurality of images includes an edge of the upper portion.

12. the acquisition unit acquires a first image generated by detecting secondary electrons generated by irradiating the electron beam toward the partition wall from a second direction that forms a second angle with respect to the first direction, and acquires a second image generated by detecting secondary electrons generated by irradiating the electron beam toward the partition wall from a second direction that forms a third angle with respect to the first direction that is larger than the second angle, When the analysis of the first image identifies that the side surface of the lower part is not included in the first image, and the analysis of the second image identifies that the side surface of the lower part is included in the second image, the measurement unit measures an angle that is larger than the second angle and smaller than the third angle as a first angle. The measurement device according to claim 11.

13. the electron beam is irradiated toward the partition wall from a second direction forming the angle with respect to the first direction while the angle with respect to the first direction is sequentially changed; The measurement unit measures, as the first angle, an angle formed by a second direction in which the electron beam is irradiated with respect to the first direction when a first image at a timing when the side surface of the lower portion appears or a second image at a timing when the side surface of the lower portion disappears from the plurality of images is generated by analyzing each of the plurality of images. The measurement device according to claim 11.

14. the lower portion includes a first layer disposed on the substrate and a second layer disposed on the first layer; The measurement unit measures a first angle based on the analysis result to represent at least one of a ratio between a protrusion amount of the upper end portion from a side surface of the first layer and a length of the first and second layers in the first direction, and a ratio between a protrusion amount of the upper end portion from a side surface of the second layer and a length of the second layer in the first direction. The measurement device according to claim 10.

15. 15. The metrology device of claim 14, wherein the first and second layers are each formed of a different metallic material.

16. 16. The measurement device according to claim 10, further comprising a determination unit that determines whether the partition wall is properly formed based on the measured first angle.

17. a lower electrode is formed on the substrate; a rib is formed that covers a portion of the lower electrode and has an opening that overlaps the lower electrode; The partition wall is formed on the rib. The measurement device according to claim 16.

18. The measuring device according to claim 17 , wherein, when it is determined that the partition wall is properly formed, an organic layer is formed in contact with the lower electrode through the opening, and an upper electrode is formed on the organic layer.

19. an irradiation unit that irradiates the electron beam; a detection unit that detects secondary electrons generated by irradiating the electron beam toward the partition wall; The measurement device of claim 10 further comprising:

Images