Microwave device

Abstract

To provide a microwave device that includes a master oscillator, a delay line, and a slave oscillator.SOLUTION: In a microwave device 10, a master oscillator generates a source RF signal to generate a master RF output MO1. Delay lines DL1 to DL7 are coupled to the master oscillator. Slave oscillators are coupled to the master oscillator via delay lines and generate slave RF outputs SO1 to SO7, respectively, in accordance with the source RF signal. The master RF output and a plurality of slave RF outputs are in phase. The master oscillator and each of the slave oscillators are solid-state microwave oscillators.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to microwave devices, and more particularly to microwave devices using solid-state microwave oscillators. [Background technology]

[0002] In the field of microwave irradiation, magnetron tubes are commonly used as microwave sources. Although magnetron tubes can generate microwaves with high power, the microwaves generated by magnetron tubes usually contain various resonant wavelengths, and therefore the controllability of these microwaves is not optimal. Therefore, there is a need to generate microwaves with high power and better controllability.

[0003] This Background section is intended to provide background information only. The description of this Background section is not an admission that the subject matter disclosed in this section constitutes prior art to the present disclosure, and this Background section should not be used as an admission that any portion of this application, including this Background section, constitutes prior art to the present disclosure. Summary of the Invention [Means for solving the problem]

[0004] One aspect of the present disclosure provides a microwave device including a master oscillator, a delay line, and a slave oscillator. The master oscillator is configured to generate a source radio frequency (RF) signal to generate a master RF output. The delay line is coupled to the master oscillator. The slave oscillators are coupled to the master oscillator via the delay line and configured to each generate a slave RF output according to the source RF signal. The master RF output and the multiple slave RF outputs are phase-matched.

[0005] In some embodiments, each of the delay lines has an equal length to one another. In some embodiments, each of the delay lines has an equal electrical length.

[0006] In some embodiments, the master oscillator includes a phase-locked loop (PLL) synthesizer, a splitter, a delay unit, a master phase shifter, a master attenuator, and a master amplifier. The PLL synthesizer is configured to generate a source RF signal. The splitter is configured to split the source RF signal to generate a master RF signal and a slave RF signal. The delay unit is configured to delay the master RF signal to generate a delayed master RF signal. The master phase shifter is configured to adjust the phase of the delayed master RF signal to generate an conditioned RF signal. The master attenuator is configured to attenuate the power of the conditioned RF signal to generate an attenuated RF signal. The master amplifier is configured to amplify the attenuated RF signal to generate a master RF output.

[0007] In some embodiments, the delay line is coupled to the splitter and configured to delay the slave RF signals to generate respective delayed slave RF signals, and the slave oscillator is configured to receive the respective delayed slave RF signals.

[0008] In some embodiments, each of the delayed master and slave RF signals are in phase.

[0009] In some embodiments, each of the slave oscillators includes a slave phase shifter, a slave attenuator, and a slave amplifier. The slave phase shifters are coupled to the respective delay lines and configured to generate conditioned slave RF signals according to the respective slave RF signals. The slave attenuators are configured to attenuate the power of the conditioned slave RF signals to generate the attenuated slave RF signals. The slave amplifiers are configured to amplify the attenuated slave RF signals to generate the respective slave RF outputs.

[0010] In some embodiments, the splitter includes a power control unit and a combiner, the power control unit is configured to receive the source RF signal and control the power of the source RF signal, and the combiner is coupled to the power control unit and configured to generate the slave RF signal.

[0011] In some embodiments, the power control unit includes an attenuator and an amplifier, the attenuator configured to receive the source RF signal, and the amplifier coupled between the attenuator and the combiner.

[0012] In some embodiments, the power of the master RF output is the same as the power of each of the slave RF outputs.

[0013] Another aspect of the present disclosure provides a microwave device including a master oscillator, an external delay line, a delay line, and a slave oscillator. The master oscillator is configured to generate a divided signal and generate a master RF output. The external delay line is coupled to the master oscillator. The delay line is coupled to the master oscillator. The slave oscillators are coupled to the master oscillator via the delay line and configured to generate each slave RF output according to a source RF signal. The master oscillator is configured to receive a first divided signal of the divided signals and generate the master RF output, and the slave oscillators are configured to receive the remaining divided signals other than the first divided signal and generate each slave RF output.

[0014] Another aspect of the present disclosure provides a microwave device including a master oscillator, a splitter, a delay line, and a slave oscillator. The master oscillator is configured to generate a source RF signal. The splitter is coupled to split the source RF signal into split signals. The delay line is configured to delay the split signals to generate delayed signals. The delayed signals include a master RF signal and a slave RF signal. The master oscillator is configured to generate a master RF output according to the master RF signal, and the slave oscillators are each configured to generate a slave RF output according to the slave RF signal. Each of the delay lines has an electrical length equal to one another.

[0015] In some embodiments, the master and slave RF outputs are in phase.

[0016] In some embodiments, the master oscillator includes a PLL synthesizer, a master phase shifter, a master attenuator, and a master amplifier. The PLL synthesizer is configured to generate a source RF signal. The master phase shifter is configured to adjust the phase of the master RF signal to generate an adjusted RF signal. The master attenuator is configured to attenuate the power of the adjusted RF signal to generate an attenuated RF signal. The master amplifier is configured to amplify the attenuated RF signal to generate a master RF output.

[0017] In some embodiments, each of the slave oscillators includes a slave phase shifter, a slave attenuator, and a slave amplifier. The slave phase shifter is configured to generate an conditioned slave RF signal according to the respective slave RF signal. The slave attenuator is configured to attenuate the power of the conditioned slave RF signal to generate the attenuated slave RF signal. The slave amplifier is configured to amplify the attenuated slave RF signal to generate a respective slave RF output.

[0018] In some embodiments, the microwave device further includes a controller configured to control a slave phase shifter of each of the slave oscillators to adjust the phase of each of the tuned slave RF signals.

[0019] In some embodiments, the microwave device is configured to perform beamforming to irradiate the master RF output and the slave RF output along one direction.

[0020] In some embodiments, the direction of beamforming is associated with the phase of the master RF output and the phase of each of the slave RF outputs.

[0021] In some embodiments, each of the split signals has equal power to one another.

[0022] In some embodiments, each of the split signals has a power equal to the power of the source RF signal.

[0023] In some embodiments, the master oscillator and the slave oscillator are solid state microwave oscillators.

[0024] The foregoing has outlined rather broadly the features and technical advantages of the present disclosure in order that the detailed description of the disclosure that follows may be better understood. Additional features and advantages of the present disclosure will be described hereinafter, and will form the subject of the claims of the present disclosure. It should be appreciated by those skilled in the art that the conception and specific embodiments disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present disclosure. It should also be appreciated by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the present disclosure as set forth in the appended claims. [Brief explanation of the drawings]

[0025] The present disclosure can be more fully understood by reference to the detailed description and claims when considered in conjunction with the drawings, in which like reference numerals refer to similar elements throughout.

[0026] [Figure 1] FIG. 1 is a schematic diagram of a microwave device according to some embodiments of the present disclosure. [Figure 2] FIG. 2 is a schematic diagram of the microwave device shown in FIG. 1 according to some embodiments of the present disclosure. [Figure 3] FIG. 2 is a schematic diagram of a master oscillator according to some embodiments of the present disclosure. [Figure 4] FIG. 2 is a schematic diagram of a slave oscillator according to some embodiments of the present disclosure. [Figure 5] FIG. 1 is a schematic diagram of a splitter according to some embodiments of the present disclosure. [Figure 6] FIG. 10 is a schematic diagram of a splitter according to another embodiment of the present disclosure. [Figure 7] 1A-1C are schematic diagrams of splitters according to various embodiments of the present disclosure. [Figure 8] FIG. 10 is a schematic diagram of a splitter according to an alternative embodiment of the present disclosure. [Figure 9] FIG. 1 is a schematic diagram of a microwave device according to some embodiments of the present disclosure. [Figure 10] FIG. 2 is a schematic diagram of a master oscillator according to some embodiments of the present disclosure. [Figure 11] FIG. 1 is a schematic diagram of a microwave device according to some embodiments of the present disclosure. [Figure 12] FIG. 2 is a schematic diagram of a master oscillator according to some embodiments of the present disclosure. [Figure 13] FIG. 10 is a schematic diagram of a microwave device according to another embodiment of the present disclosure. [Figure 14] FIG. 1 is a schematic diagram of a microwave device according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0027] Specific language will be used below to describe embodiments or examples of the present disclosure shown in the drawings. It should be understood that this does not limit the scope of the present disclosure. Any changes or modifications to the described embodiments, and further applications of the principles described herein, are contemplated as would normally occur to one skilled in the art to which this disclosure pertains. Although reference numerals may be repeated throughout the embodiments, this does not necessarily mean that features of one embodiment apply to another embodiment even if the two embodiments share the same reference numeral.

[0028] Although this specification uses terms such as first, second, and third to describe various elements, components, regions, layers, or sections, it should be understood that these elements, components, regions, layers, or sections are not limited by these terms. Rather, these terms are used merely to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first element, first component, first region, first layer, or first section discussed below could be referred to as a second element, second component, second region, second layer, or second section without departing from the teachings of the inventive concept.

[0029] The terms used herein are merely for the purpose of describing particular exemplary embodiments and are not intended to limit the concepts of the present invention. As used herein, the singular forms "a," "an," and "the" are intended to encompass the plural forms as well, unless the context clearly dictates otherwise. Furthermore, it should be understood that the terms "comprises" and "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.

[0030] FIG. 1 is a schematic diagram of a microwave device 10 according to some embodiments of the present disclosure. As shown in FIG. 1, the microwave device 10 is configured to irradiate microwave power MP to heat an object (target object) OB. The object is shown in a chamber 100, i.e., an enclosed space, but the present disclosure is not limited thereto. The object OB can also be located in an open space rather than an enclosed space. In some embodiments, when the microwave device 10 irradiates microwave power MP, the microwave device 10 performs beamforming, which stacks multiple microwaves to generate microwave power MP having a power substantially equal to the sum of the powers of these microwaves.

[0031] In some embodiments, the microwave device 10 is configured to generate microwave power MP having a power ranging from kilowatt (KW) levels to megawatt (MW) levels.

[0032] 2 is a schematic diagram of a microwave device 10 according to some embodiments of the present disclosure. As shown in FIG. 2, the microwave device 10 includes a master oscillator MG1, slave oscillators SG1 to SG7, and delay lines DL1 to DL7. The slave oscillators SG1 to SG7 are coupled to the master oscillator MG1 via the delay lines DL1 to DL7, respectively.

[0033] The master oscillator MG1 is configured to generate a master radio frequency (RF) output MO1, and the slave oscillators SG1-SG7 are configured to generate slave RF outputs SO1-SO7, respectively.

[0034] In some embodiments, the microwave device 10 is configured to perform beamforming that stacks the master RF output MO1 and the slave RF outputs SO1-SO7 to generate the microwave power MP.

[0035] The delay lines DL1-DL7 are known as delay cables. In some embodiments, each of the delay lines DL1-DL7 has an equal length. In some embodiments, the master RF output MO1 and the slave RF outputs SO1-SO7 are the same. More specifically, the frequency, phase, and power of the master RF output MO1 are the same as the frequency, phase, and power of each of the slave RF outputs SO1-SO7. In other words, the master RF output MO1 and the slave RF outputs SO1-SO7 are synchronized.

[0036] The microwave device 10 performs beamforming according to the master RF output MO1 and the slave RF outputs SO1-SO7 to generate microwave power MP. In some embodiments, the master RF output MO1 and the slave RF outputs SO1-SO7 have the same frequency and phase, so that the power of the microwave power MP is substantially equal to the sum of the power of the master RF output and the slave RF outputs SO1-SO7.

[0037] 3 is a schematic diagram of a master oscillator MG1 according to some embodiments of the present disclosure, which includes a phase-locked loop (PLL) synthesizer 110, a splitter 120, a delay unit 130, a phase shifter 140, an attenuator 150, and an amplifier 160.

[0038] The PLL synthesizer 110 is configured to generate a source RF signal SS. The splitter 120 is configured to receive the source RF signal SS and split the source RF signal SS to generate a master RF signal MS and slave RF signals S1 to S7.

[0039] In some embodiments, the frequency of the source RF signal SS is the same as the frequency of the master RF signal MS and the frequencies of each of the slave RF signals S1 to S7, the power of the source RF signal SS is the same as the power of the master RF signal MS and the power of each of the slave RF signals S1 to S7, and the phases of the master RF signal MS and each of the slave RF signals S1 to S7 are the same.

[0040] Delay unit 130 is configured to receive master RF signal MS and generate a delayed master RF signal DS by delaying master RF signal MS.

[0041] Phase shifter 140 is configured to receive delayed master RF signal DS and generate adjusted RF signal AS by adjusting the phase of delayed master RF signal DS. In some embodiments, the phase adjustment amount by phase shifter 140 is set to 0 degrees, meaning that the phase value does not change. In such embodiments, the phase value of adjusted RF signal AS is set to be the reference phase for the other slave oscillators SG1-SG7. Alternatively, phase shifter 140 has the ability to change the phase of delayed master RF signal DS and also has the ability to maintain the phase of delayed master RF signal DS.

[0042] The attenuator 150 is configured to receive the conditioned RF signal AS and generate the attenuated RF signal ATTS by attenuating the power of the conditioned RF signal AS. The amplifier 160 is configured to receive the attenuated RF signal ATTS and generate the master RF output MO1 by amplifying the attenuated RF signal ATTS.

[0043] 4 is a schematic diagram of a slave oscillator SG1 according to some embodiments of the present disclosure. In some embodiments, the slave oscillators SG1-SG7 are identical to each other, so for simplicity, only the slave oscillator SG1 will be described.

[0044] 4, the slave oscillator SG1 is coupled to the master oscillator MG1 through a delay line DL1. The delay line DL1 receives the slave RF signal S1 and generates a delayed slave RF signal DS1 by delaying the slave RF signal S1. In some embodiments, the delayed slave RF signal DS1 and the delayed master RF signal DS are in phase.

[0045] 4, delay line DL1 is shown using a solid box that is separate from master oscillator MG1 and slave oscillator SG1, but it should be noted that delay line DL1 can represent an electrical connection between splitter 120 of master oscillator MG1 and phase shifter 240 of slave oscillator SG1. In other words, the phase delay can occur anywhere between splitter 120 of master oscillator MG1 and phase shifter 240 of slave oscillator SG1.

[0046] In some embodiments, the frequency of the source RF signal SS may vary. To maintain the delayed slave RF signals DS1-DS7 and the delayed master RF signal DS in phase at different frequencies, the lengths of the delay lines DL1-DL7 are equal to each other, and the effective length of the delay unit 130 is equal to the length of the delay lines DL1-DL7.

[0047] The slave oscillator SG1 includes a phase shifter 240, an attenuator 250, and an amplifier 260.

[0048] The phase shifter 240 is configured to receive the delayed slave RF signal DS1 and generate the adjusted slave RF signal AS1 by adjusting the phase of the delayed slave RF signal DS1. Alternatively, the phase shifter 240 has the ability to change the phase of the delayed slave RF signal DS1 and also has the ability to maintain the phase of the delayed slave RF signal DS1.

[0049] The attenuator 250 is configured to receive the conditioned slave RF signal AS1 and generate an attenuated slave RF signal ATTS1 by attenuating the power of the conditioned slave RF signal AS1. The amplifier 260 is configured to receive the attenuated slave RF signal ATTS1 and generate a slave RF output SO1 by amplifying the attenuated slave RF signal ATTS1.

[0050] FIG. 5 is a schematic diagram of a splitter 120 of master oscillator MG1 according to some embodiments of the present disclosure.

[0051] 5, the splitter 120 includes a power control unit 121 and a coupler assembly array 125. The power control unit 121 is configured to receive a source RF signal SS and control the power of the source RF signal SS. The coupler assembly array 125 is coupled to the power control unit 121 and configured to generate a master RF signal MS and slave RF signals S1 to S7.

[0052] The power control unit 121 includes an attenuator 122 and an amplifier 123. The attenuator 122 is configured to receive a source RF signal SS and generate an attenuated signal SS1 by attenuating the power of the source RF signal SS. The amplifier 123 is configured to amplify the attenuated signal SS1 to generate an amplified signal SS2.

[0053] In some embodiments, the gain of amplifier 123 is set and fixed to a predetermined value. In some embodiments, the gain of amplifier 123 is set and fixed to the maximum value of amplifier 123.

[0054] 3 and 5, the splitter 120 is configured to output eight signals (MS and S1 to S7), each having equal power. In consideration of the above, the power control unit 121 needs to control the power of the amplified signal SS2 to be at least eight times that of the source RF signal SS.

[0055] The combiner assembly array 125 is configured to receive the amplified signal SS2 and split the amplified signal SS2 into a master RF signal MS and slave RF signals S1-S7.

[0056] 5, combiner 125 includes divider 125a, divider 125b, divider 125c, divider 125d, divider 125e, divider 125f, and divider 125g. Each of dividers 125a through 125g is configured to split the received signal into two identical split signals, each having half the power of the received signal.

[0057] Divider 125a is coupled to power control unit 121 and configured to receive amplified signal SS2. Dividers 125b and 125c are respectively coupled to divider 125a and configured to receive the divided signal generated by divider 125a. Dividers 125d and 125e are respectively coupled to divider 125b and configured to receive the divided signal generated by divider 125b. Divider 125d is configured to generate master RF signal MS and slave RF signal S1. Divider 125e is configured to generate slave RF signal S2 and slave RF signal S3. Dividers 125f and 125g are respectively coupled to divider 125c and configured to receive the divided signal generated by divider 125c. Divider 125f is configured to generate slave RF signal S4 and slave RF signal S5. Divider 125g is configured to generate slave RF signal S6 and slave RF signal S7.

[0058] The number of slave RF signals S1-S7 (i.e., the number of slave oscillators) shown in Figures 2, 3, and 5 are provided for illustrative purposes. However, the present disclosure is not limited thereto. In various embodiments, microwave device 10 includes fewer or more slave oscillators.

[0059] Figure 6 is a schematic diagram of a splitter 120 according to another embodiment of the present disclosure. Figure 7 is a schematic diagram of a splitter 120 according to various embodiments of the present disclosure.

[0060] 6 and 7, when the microwave device 10 includes fewer slave oscillators, for example, three slave oscillators, the coupler assembly array 125 of the splitter 120 is configured to generate four outputs. Compared to the coupler assembly array 125 shown in FIG. 5, the coupler assembly array 125 shown in FIG. 6 omits the dividers 125d to 125g. Thus, the divider 125b is configured to generate the master RF signal MS and the slave RF signal S1, and the divider 125c is configured to generate the slave RF signal S2 and the slave RF signal S3.

[0061] If the microwave device 10 includes fewer slave oscillators, for example, only one slave oscillator, the coupler assembly array 125 of the splitter 120 is configured to generate two outputs. Compared to the coupler assembly array 125 shown in Figure 5, the coupler assembly array 125 shown in Figure 7 omits the dividers 125b to 125g. Therefore, the coupler assembly array 125 is a divider 125a, which is configured to generate a master RF signal MS and a slave RF signal S1.

[0062] FIG. 8 is a schematic diagram of a splitter 120 according to an alternative embodiment of the present disclosure.

[0063] 8, in alternative embodiments, the microwave device 10 includes other numbers of slave oscillators, for example, six slave oscillators. Accordingly, a terminator TR is used to terminate one of the outputs of the splitter 120.

[0064] Figure 9 is a schematic diagram of a microwave device 20 according to some embodiments of the present disclosure. Figure 10 is a schematic diagram of a master oscillator MG2 according to some embodiments of the present disclosure.

[0065] 9 and 10, microwave apparatus 20 is similar to microwave apparatus 10. More specifically, microwave apparatus 20 is configured to irradiate microwave power MP to an object OB as shown in Fig. 1. Compared to microwave apparatus 10, microwave apparatus 20 includes a master oscillator MG2 that is different from master oscillator MG1, and an external delay line EDL coupled to master oscillator MG2.

[0066] For ease of understanding, components in microwave device 20 that are similar to components in microwave device 10 are designated with the same reference numerals.

[0067] Master oscillator MG2 is similar to master oscillator MG1 and includes a PLL synthesizer 110, a splitter 120, a phase shifter 140, an attenuator 150 and an amplifier 160.

[0068] The PLL synthesizer 110 is configured to generate a source RF signal SS. The splitter 120 is configured to receive the source RF signal SS and split the source RF signal SS to generate a master RF signal MS and slave RF signals S1 to S7.

[0069] In some embodiments, the frequency of the source RF signal SS is the same as the frequency of the master RF signal MS and the frequencies of each of the slave RF signals S1 to S7, the power of the source RF signal SS is the same as the power of the master RF signal MS and the power of each of the slave RF signals S1 to S7, and the phases of the master RF signal MS and each of the slave RF signals S1 to S7 are the same.

[0070] Compared to master oscillator MG1, master oscillator MG2 does not include an internal delay unit 130; instead, microwave device 20 further includes an external delay line EDL coupled to master oscillator MG2.

[0071] The external delay line EDL is configured to receive the master RF signal MS and generate a delayed master RF signal DS by delaying the master RF signal MS. The delay lines DL1-DL7 are configured to delay the slave RF signals S1-S7 to generate delayed slave RF signals DS1-DS7, respectively. The delayed master RF signal DS and the delayed slave RF signals DS1-DS7 are in phase. To maintain the phases of the delayed master RF signal DS and the delayed slave RF signals DS1-DS7 in phase at different frequencies, the lengths of the external delay line EDL and the delay lines DL1-DL7 are equal to each other.

[0072] In some embodiments, the space for the microwave device 20 to irradiate microwave power MP is a large and complex structure, and the slave oscillators SG1-SG7 are far away from the master oscillator MG2. Therefore, simply using the delay unit 130 located in the master oscillator MG1 may not provide a sufficient effective length to match the phases of the delayed master RF signal DS and the delayed slave RF signals DS1-DS7. Therefore, an external delay line EDL is applied and configured to keep the delayed master RF signal DS and the delayed slave RF signals DS1-DS7 matched in phase. In some embodiments, since the external delay line EDL is located outside the master oscillator MG2, the design flexibility of the length of the external delay line EDL is high. In other words, the external delay line EDL can have various lengths designed to meet the needs of the microwave device 20.

[0073] Phase shifter 140 is configured to receive delayed master RF signal DS and generate adjusted RF signal AS by adjusting the phase of delayed master RF signal DS. In some embodiments, the phase adjustment amount by phase shifter 140 is set to 0 degrees, meaning that the phase value does not change. In such embodiments, the phase value of adjusted RF signal AS is set to be the reference phase for the other slave oscillators SG1-SG7. Alternatively, phase shifter 140 has the ability to change the phase of delayed master RF signal DS and also has the ability to maintain the phase of delayed master RF signal DS.

[0074] The attenuator 150 is configured to receive the conditioned RF signal AS and generate the attenuated RF signal ATTS by attenuating the power of the conditioned RF signal AS. The amplifier 160 is configured to receive the attenuated RF signal ATTS and generate the master RF output MO2 by amplifying the attenuated RF signal ATTS.

[0075] In some embodiments, the slave oscillators SG1-SG7 in Figure 9 are the same as those in Figure 2. Therefore, details of the slave oscillators SG1-SG7 of the microwave device 20 are omitted for the sake of brevity.

[0076] Figure 11 is a schematic diagram of a microwave device 30 according to some embodiments of the present disclosure. Figure 12 is a schematic diagram of a master oscillator MG3 according to some embodiments of the present disclosure.

[0077] 11 and 12, microwave apparatus 30 is similar to microwave apparatus 10. More specifically, microwave apparatus 30 is configured to irradiate microwave power MP to an object OB as shown in Fig. 1. Compared to microwave apparatus 10, microwave apparatus 30 includes a master oscillator MG3 different from master oscillator MG1, a splitter 300, and an external delay line EDL coupled between master oscillator MG3 and splitter 300.

[0078] For ease of understanding, components in microwave device 30 that are similar to components in microwave device 10 are designated with the same reference numerals.

[0079] Master oscillator MG3 is similar to master oscillator MG1 and includes a PLL synthesizer 110, a phase shifter 140, an attenuator 150 and an amplifier 160.

[0080] The PLL synthesizer 110 is configured to generate a source RF signal SS. After the source RF signal SS is generated, the master oscillator MG3 is configured to transmit the source RF signal SS to the splitter 300. Note that the splitter 300 is an element separate from the master oscillator MG3. In other words, the splitter 300 is external to the master oscillator MG3.

[0081] Splitter 300 is configured to receive a source RF signal SS and generate a master RF signal MS and slave RF signals S1-S7 by splitting the source RF signal SS. In some embodiments, splitter 300 is similar to splitter 120 shown in FIG. 5.

[0082] In some embodiments, the frequency of the source RF signal SS is the same as the frequency of the master RF signal MS and the frequencies of each of the slave RF signals S1 to S7, the power of the source RF signal SS is the same as the power of the master RF signal MS and the power of each of the slave RF signals S1 to S7, and the phases of the master RF signal MS and each of the slave RF signals S1 to S7 are the same.

[0083] Compared to master oscillator MG1, master oscillator MG3 does not include delay unit 130 and splitter 120, but microwave device 30 further includes splitter 300 and an external delay line EDL coupled between splitter 300 and master oscillator MG3.

[0084] The external delay line EDL is configured to receive the master RF signal MS and generate a delayed master RF signal DS by delaying the master RF signal MS. The delay lines DL1-DL7 are configured to delay the slave RF signals S1-S7 to generate delayed slave RF signals DS1-DS7, respectively. The delayed master RF signal DS and the delayed slave RF signals DS1-DS7 are in phase. To maintain the phases of the delayed master RF signal DS and the delayed slave RF signals DS1-DS7 in phase at different frequencies, the lengths of the external delay line EDL and the delay lines DL1-DL7 are equal to each other.

[0085] Phase shifter 140 is configured to receive delayed master RF signal DS and generate adjusted RF signal AS by adjusting the phase of delayed master RF signal DS. In some embodiments, the phase adjustment amount by phase shifter 140 is set to 0 degrees, meaning that the phase value does not change. In such embodiments, the phase value of adjusted RF signal AS is set to be the reference phase for the other slave oscillators SG1-SG7. Alternatively, phase shifter 140 has the ability to change the phase of delayed master RF signal DS and also has the ability to maintain the phase of delayed master RF signal DS.

[0086] The attenuator 150 is configured to receive the conditioned RF signal AS and generate the attenuated RF signal ATTS by attenuating the power of the conditioned RF signal AS. The amplifier 160 is configured to receive the attenuated RF signal ATTS and generate the master RF output MO3 by amplifying the attenuated RF signal ATTS.

[0087] In some embodiments, the slave oscillators SG1-SG7 in Figure 11 are the same as those in Figure 2. Therefore, details of the slave oscillators SG1-SG7 of microwave device 30 are omitted for the sake of brevity.

[0088] In some embodiments, microwave device 10, microwave device 20, and microwave device 30 are configured to generate 1 kW microwave power MP. For example, the power of each of master RF outputs MO1, MO2, and MO3 is about 250 watts, and the power of each of slave RF outputs SO1-SO7 is about 250 watts. In this situation, the power of microwave power MP is about 2 kW.

[0089] In other embodiments, the microwave device may require more power to heat the object OB, in which case the microwave device may have more slave oscillators to increase the total power output, such as microwave device 40 shown in Figure 13.

[0090] FIG. 13 is a schematic diagram of a microwave device 40 according to another embodiment of the present disclosure.

[0091] As shown in Figure 13, microwave device 40 is similar to microwave device 30. More specifically, microwave device 40 is configured to irradiate microwave power MP to an object OB as shown in Figure 1. Microwave device 40 includes a master oscillator MG3 and a splitter 300 that are the same as the master oscillator MG3 and splitter 300 of microwave device 30. Microwave device 40 further includes splitters 300a-300m, delay lines DL1-DLn, an external delay line EDL, and slave oscillators SG1-SGn. The subscripts, i.e., m and n, are integers, and n is greater than m.

[0092] Splitters 300a-300m are similar to splitter 300, and the internal elements of each of splitters 300a-300m are the same as the elements in splitter 300. Splitters 300a-300m are coupled to splitter 300 as shown in FIG.

[0093] The master oscillator MG3 is configured to generate a source RF signal SS to the splitter 300, and the splitter 300 is configured to split the source RF signal SS and transmit it to the splitters 300a to 300m.

[0094] The splitters 300a to 300m are configured to split a received signal to generate slave RF signals S1 to Sn and a master RF signal MS. The slave RF signals S1 to Sn are transmitted to the slave oscillators SG1 to SGn, respectively. The master RF signal MS is transmitted to the master oscillator MG3 via an external delay line EDL. The master oscillator MG3 is configured to generate a master RF output MO4 in accordance with the master RF signal MS, and the slave oscillators SG1 to SGn are configured to generate slave RF outputs SO1 to SOn in accordance with the slave RF signals S1 to Sn, respectively.

[0095] In some embodiments, each of the slave oscillators SG1 to SGn is the same as the slave oscillator SG1 of microwave device 10, microwave device 20 or microwave device 30. Therefore, details of the slave oscillators SG1 to SGn are omitted for the sake of brevity.

[0096] In some embodiments, the length of the external delay line EDL is the same as the length of each of the delay lines DL1 to DLn. In some embodiments, the master RF output MO4 and the slave RF outputs SO1 to SOn are in phase.

[0097] The microwave device 40 can generate microwave power MP having higher energy. In the embodiment shown in FIG. 13, the output power of the microwave power MP is equal to n+1 times 250 W. For example, when n is equal to 63, the output power of the microwave power MP is approximately 16 kW. As another example, when n is equal to 2047, the output power of the microwave power MP is approximately 2 MW. Note that the present disclosure is not limited to 63, and in various embodiments, n can be any integer.

[0098] FIG. 14 is a schematic diagram of a microwave device 50 according to some embodiments of the present disclosure.

[0099] 14, in some embodiments, the microwave device 50 is configured to irradiate the object OB with microwave power MP, and the microwave device 50 is further configured to scan the object OB by changing the irradiation direction D1 when irradiating the microwave power MP.

[0100] The microwave device 50 includes the microwave device 10, the microwave device 20, the microwave device 30, and the microwave device 40. For ease of understanding, the microwave device 50 will be described based on an embodiment in which the microwave device 50 includes the microwave device 10.

[0101] The microwave device 50 further includes a controller 55 configured to control the phase shifter 140 of the master oscillator MG1 and the phase shifter 240 of each of the slave oscillators SG1-SG7.

[0102] In some embodiments, the irradiation direction D1 is determined once the phase of the master RF output MO1 and the phases of each of the slave RF outputs SO1 to SO7 are determined. In other words, if the phase is fixed to a specific value, the irradiation direction D1 is also fixed to a specific direction.

[0103] The microwave device 50 is configured to change the irradiation direction D1 using a controller 55. More specifically, the controller 55 is configured to send control signals to the phase shifter 140 of the master oscillator MG1 and the phase shifters 240 of each of the slave oscillators SG1 to SG7 to control the amount of phase adjustment by the phase shifter 140 of the master oscillator MG1 and the phase shifters 240 of each of the slave oscillators SG1 to SG7. Therefore, the phases of the master RF output MO1 and the slave RF outputs SO1 to SO7 change.

[0104] The microwave device 50 performs beamforming to generate microwave power MP and determines irradiation direction D1 according to the phases of the master RF output MO1 and slave RF outputs SO1 to SO7. When the phases of the master RF output MO1 and slave RF outputs SO1 to SO7 change, irradiation direction D1 may change to irradiation direction D2 or irradiation direction D3.

[0105] It should be noted that irradiation directions D1-D3 are provided for illustrative purposes. The present disclosure is not limited thereto. In other embodiments, microwave device 50 is configured to irradiate microwave power MP along any direction. In various embodiments, microwave device 50 is configured to irradiate microwave power MP by scanning from irradiation direction D1 to irradiation direction D2.

[0106] In some embodiments, microwave generator MG1, microwave generator MG2, microwave generator MG3, and slave oscillators SG1-SGn are solid-state microwave oscillators. Conventionally, a magnetron tube can generate high-power microwaves, but the spectrum of the microwaves generated by the magnetron tube includes a variety of frequencies, making it difficult to control the microwaves. By using a solid-state microwave oscillator, the frequency, power, and phase of the microwaves can be more easily controlled than with conventional methods. Therefore, microwave devices 10-50 provided by the present disclosure are suitable for generating high power with high controllability.

[0107] Another aspect of the present disclosure provides a microwave device including a master oscillator, an external delay line, a delay line, and a slave oscillator. The master oscillator is configured to generate a divided signal and generate a master RF output. The external delay line is coupled to the master oscillator. The delay line is coupled to the master oscillator. The slave oscillators are coupled to the master oscillator via the delay line and configured to generate each slave RF output according to a source RF signal. The master oscillator is configured to receive a first divided signal of the divided signals and generate the master RF output, and the slave oscillators are configured to receive the remaining divided signals other than the first divided signal and generate each slave RF output.

[0108] Another aspect of the present disclosure provides a microwave device including a master oscillator, a splitter, a delay line, and a slave oscillator. The master oscillator is configured to generate a source RF signal. The splitter is coupled to split the source RF signal into split signals. The delay line is configured to delay the split signals to generate delayed signals. The delayed signals include a master RF signal and a slave RF signal. The master oscillator is configured to generate a master RF output according to the master RF signal, and the slave oscillators are each configured to generate a slave RF output according to the slave RF signal. Each of the delay lines has an equal length to one another.

[0109] Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions, and alterations could be made to the present disclosure without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, many of the processes discussed above could be implemented in different ways, substituted with other processes, or combined.

[0110] Furthermore, the scope of the present application is not intended to be limited to the particular embodiments of the processes, machines, manufacture, compositions of matter, means, methods, and steps described herein. As will be readily apparent to those skilled in the art from this disclosure, any now-existing or later-developed process, machine, manufacture, composition of matter, means, method, or step that performs substantially the same function or achieves substantially the same result as the corresponding embodiment described herein can be utilized in accordance with the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. [Explanation of symbols]

[0111] 10, 20, 30, 40, 50 Microwave equipment 55 Controller 100 Chambers 110 Phase-Locked Loop (PLL) Synthesizer 120, 300, 300a~300m splitter 121 Power Control Unit 122, 150, 250 attenuators 123, 160, 260 Amplifier 125 Coupler Assembly Array 125a, 125b, 125c, 125d, 125e, 125f, 125g divider 130 delay units 140, 240 phase shifter AS tuned radio frequency signal AS1 Adjust Slave Radio Frequency Signal ATTS Attenuated Radio Frequency Signal ATTS1 Attenuated Slave Radio Frequency Signal D1, D2, D3 Irradiation direction DL1~DL7~DLn delay lines DS Delay Master Radio Frequency Signal DS1 delayed slave radio frequency signal EDL External Delay Line MG1, MG2, MG3 Master Oscillators MO1, MO2, MO3, MO4 Master Radio Frequency Output MP Microwave Power MS Master Radio Frequency Signal OB object S1~S7~Sn Slave radio frequency signals SG1~SG7~SGn Slave oscillators SO1~SO7~SOn Slave Radio Frequency Output SS Source Radio Frequency Signal SS1 attenuation signal SS2 amplified signal TR Terminator

Claims

1. a master oscillator configured to generate a source radio frequency (RF) signal to generate a master RF output; a plurality of delay lines coupled to the master oscillator; a plurality of slave oscillators coupled to the master oscillator via a plurality of the delay lines and configured to generate a plurality of slave RF outputs, respectively, according to the source RF signal; The microwave device, wherein the master RF output and the plurality of slave RF outputs are in phase.

2. The microwave device according to claim 1 , wherein each of the plurality of delay lines has an equal length to one another.

3. The master oscillator comprises: a phase-locked loop (PLL) synthesizer configured to generate the source RF signal; a splitter configured to generate a master RF signal and a plurality of slave RF signals; a delay unit configured to delay the master RF signal to generate a delayed master RF signal; a master phase shifter configured to adjust the phase of the delayed master RF signal to generate an adjusted RF signal; a master attenuator configured to attenuate the power of the conditioned RF signal to generate an attenuated RF signal; a master amplifier configured to amplify the attenuated RF signal to produce the master RF output.

4. a plurality of the delay lines coupled to the splitter and configured to delay a plurality of the slave RF signals to generate a plurality of delayed slave RF signals, respectively; The microwave device of claim 3 , wherein a plurality of the slave oscillators are configured to receive a plurality of the delayed slave RF signals, respectively.

5. The microwave device of claim 4 , wherein the delayed master RF signal and each of the plurality of delayed slave RF signals are in phase.

6. Each of the plurality of slave oscillators a slave phase shifter coupled to each of the delay lines and configured to generate an adjusted slave RF signal according to each of the slave RF signals; a slave attenuator configured to attenuate the power of the conditioned slave RF signal to generate an attenuated slave RF signal; a slave amplifier configured to amplify the attenuated slave RF signal to produce the respective slave RF output.

7. The splitter comprises: a power control unit configured to receive the source RF signal and to control the power of the source RF signal; a combiner assembly array coupled to said power control unit and configured to generate a plurality of said slave RF signals.

8. The power control unit an attenuator configured to receive the source RF signal; 8. The microwave device of claim 7, further comprising an amplifier coupled between the attenuator and the coupler assembly array.

9. 2. The microwave device of claim 1, wherein the power of the master RF output is the same as the power of each of the plurality of slave RF outputs.

10. a master oscillator configured to generate a plurality of divided signals to generate a master RF output; an external delay line coupled to the master oscillator; a plurality of delay lines coupled to the master oscillator; a plurality of slave oscillators coupled to the master oscillator via a plurality of the delay lines and configured to generate a plurality of slave RF outputs, respectively, according to a source RF signal; a plurality of slave oscillators configured to receive the remaining divided signals other than the first divided signal and generate the plurality of slave RF outputs, respectively;

11. a master oscillator configured to generate a source RF signal; a splitter coupled to split the source RF signal into a plurality of split signals; a plurality of delay lines configured to delay a plurality of the split signals to generate a plurality of delayed signals; a plurality of slave oscillators; the plurality of delayed signals include a master RF signal and a plurality of slave RF signals, the master oscillator is configured to generate a master RF output according to the master RF signal, and the plurality of slave oscillators are configured to generate a plurality of slave RF outputs according to the plurality of slave RF signals, respectively; A microwave device, wherein each of the delay lines has an equal length to one another.

12. The microwave device of claim 11 , wherein the master RF output and the plurality of slave RF outputs are in phase.

13. The master oscillator comprises: a phase-locked loop (PLL) synthesizer configured to generate the source RF signal; a master phase shifter configured to adjust the phase of the master RF signal to generate an adjusted RF signal; a master attenuator configured to attenuate the power of the conditioned RF signal to generate an attenuated RF signal; a master amplifier configured to amplify the attenuated RF signal to produce the master RF output.

14. Each of the plurality of slave oscillators a slave phase shifter configured to generate an adjusted slave RF signal according to each of the slave RF signals; a slave attenuator configured to attenuate the power of the conditioned slave RF signal to generate an attenuated slave RF signal; a slave amplifier configured to amplify the attenuated slave RF signal to produce the respective slave RF output.

15. 15. The microwave apparatus of claim 14, further comprising a controller configured to control a slave phase shifter of each of the plurality of slave oscillators to adjust the phase of each of the conditioned slave RF signals.

16. 12. The microwave device of claim 11, configured to perform beamforming to irradiate the master RF output and a plurality of the slave RF outputs along one direction.

17. 17. The microwave apparatus of claim 16, wherein the direction is associated with a phase of the master RF output and a phase of each of the plurality of slave RF outputs.

18. The microwave device according to claim 11 , wherein each of the plurality of split signals has equal power to one another.

19. 12. The microwave device of claim 11, wherein each of the plurality of split signals has a power equal to a power of the source RF signal.

20. 12. The microwave device of claim 11, wherein the master oscillator and the plurality of slave oscillators are solid-state microwave oscillators.

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